Semiconductor Device

By separating the electrode terminals from the electrode and reattaching using high-precision metal welding technology, the manufacturing process and cost increase caused by changes in electrode positions are solved, and flexible adjustment of electrode positions and high-precision connections are achieved.

JP7669984B2Active Publication Date: 2025-04-30MITSUBISHI ELECTRIC CORP
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Patent Information

Application Number
JP2022098596
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Filing Date
2022-06-20
Publication Date
2025-04-30
Estimated Expiration
2042-06-20

AI Technical Summary

Technical Problem

When the electrode position of the transfer molded power module (TPM) changes, the prior art requires changing the shape of the mold and electrode frame, resulting in increased manufacturing process and costs.

Method used

Flexible adjustment of electrode position is achieved by separating the electrode terminals from the electrode and reattaching them to the electrode using high-precision metal welding techniques such as welding, US welding or Ag welding.

Benefits of technology

The cost and complexity of the manufacturing process caused by changes in mold and frame shape caused by changes in electrode position are avoided, and flexible adjustment of electrode position and high-precision connection are achieved.

✦ Generated by Eureka AI based on patent content.

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Patent Text Reader

Abstract

To separate an electrode terminal of a power module from an electrode and to post-attach the separated electrode terminal to the electrode accurately, to thereby facilitate change in electrode position of a transfer molded-power module, even when the shape of the power module is required to be changed.SOLUTION: A semiconductor device comprises: a semiconductor chip; a mold resin 2 that incorporates the semiconductor chip; an electrode 3 electrically connected to the semiconductor chip and exposed at an opening 5 provided in the mold resin 2; and an electrode terminal 4 that comprises a contact portion 9 covering the electrode 3 and coming in electric contact with the electrode, and a plurality of projections 7 and 8 that are formed in such a way as to surround the contact portion 9 and provided between a lateral face 13 of the opening 5 and the contact portion 9, and that have contact end portion 11 having the contact portion 9 and an open end portion 12 different from the contact end portion 11.SELECTED DRAWING: Figure 2
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Description

[Technical field]

[0001] The present disclosure is an invention relating to a semiconductor device such as a transfer mold type power module in which electrode terminals are later attached to electrodes. [Background technology]

[0002] Conventionally, a power semiconductor device has been disclosed in which a plurality of lead frames are electrically connected to a power semiconductor chip sealed in a mold resin, and the plurality of lead frames protrude from a housing that is sealed together with the power semiconductor chip by the mold resin (for example, see Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2004-165281 A (paragraphs 0031-0034, Figure 1) Summary of the Invention [Problem to be solved by the invention]

[0004] When producing a transfer molded power module (TPM), the position of the electrodes is fixed inside the mold of the transfer molded power module. If the electrode position of the module is changed, the shape of the transfer molded power module must be changed. This requires changes to the mold and the shape of the frame used to create electrodes that correspond to the mold, as well as to the entire manufacturing process, and these changes incur costs and other issues.

[0005] The present disclosure has been made to solve the problems described above, and aims to provide a semiconductor device that makes it easy to change the electrode position of a module by separating the electrode terminals of a power module from the electrodes and accurately retrofitting the separated electrode terminals to the electrodes. [Means for solving the problem]

[0006] The semiconductor device according to the present disclosure includes: The electrode terminal has a semiconductor chip, a molded resin containing the semiconductor chip, an electrode electrically connected to the semiconductor chip and exposed at an opening provided in the molded resin, a contact portion covering the electrode and electrically contacting the electrode, and a plurality of protrusions formed to surround the contact portion and provided between the side surface of the opening and the contact portion, and has a contact end at which the contact portion is located and an open end which is an end different from the contact end, wherein the protrusion includes a third protrusion provided at the contact portion of the electrode terminal, and the opening has a recess into which the third protrusion engages. Effect of the Invention

[0008] According to the semiconductor device according to the present disclosure, even if the electrode positions of the module are changed, it is possible to avoid the occurrence of costs and the like associated with the change. [Brief description of the drawings]

[0009] [Figure 1] 1 is a perspective view of a semiconductor device according to a first embodiment. [Diagram 2] FIG. 2 is an enlarged plan view of an electrode terminal of the semiconductor device according to the first embodiment; [Diagram 3] 6 is a modification of the electrode terminal in the semiconductor device according to the first embodiment. [Figure 4] 6 is a modification of the electrode terminal in the semiconductor device according to the first embodiment. [Diagram 5] 6 is a modification of the electrode terminal in the semiconductor device according to the first embodiment. [Figure 6] 6 is a modification of the electrode terminal in the semiconductor device according to the first embodiment. [Figure 7] 1 shows a modified example of an electrode terminal in the semiconductor device according to the first embodiment. [Figure 8] 4A and 4B are diagrams showing a joint portion of an electrode terminal according to the first embodiment. [Figure 9] 4A and 4B are diagrams showing a joint portion of an electrode terminal according to the first embodiment. [Figure 10] FIG. 11 is a diagram showing an opening sealed with a sealant in the first embodiment. [Figure 11] 11 is an enlarged view of an electrode terminal of a semiconductor device according to a second embodiment. FIG. [Figure 12] 13A and 13B are diagrams illustrating a modified example of an electrode terminal according to the second embodiment. [Figure 13]13 is a diagram showing a cross section of an opening portion of a semiconductor device according to a third embodiment. FIG. [Figure 14] FIG. 13 is a diagram showing an electrode terminal according to a fourth embodiment. [Figure 15] FIG. 13 is an enlarged view of an electrode terminal according to a fourth embodiment. [Figure 16] FIG. 13 is an enlarged view of an electrode terminal according to a fourth embodiment. [Figure 17] FIG. 13 is an enlarged view of an electrode terminal according to the fifth embodiment; [Figure 18] 13 is a diagram showing a cross section of an opening of an electrode terminal according to embodiment 5. FIG. [Figure 19] FIG. 23 is an enlarged view of an electrode terminal according to the sixth embodiment. [Figure 20] 13 is a diagram showing a cross section of an opening of an electrode terminal according to embodiment 6. FIG. [Figure 21] 13 is a modified example of the electrode terminal according to the sixth embodiment. [Figure 22] 13 is a modified example of the electrode terminal according to the sixth embodiment. [Figure 23] 13 is a modified example of the electrode terminal according to the sixth embodiment. [Figure 24] FIG. 13 is an enlarged view of an electrode terminal according to a seventh embodiment. [Diagram 25] FIG. 13 is a diagram showing a semiconductor device according to an eighth embodiment; [Figure 26] FIG. 13 is a diagram showing a power conversion system to which a power conversion device according to a ninth embodiment is applied. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Embodiment 1 A semiconductor device according to a first embodiment will be described with reference to Fig. 1. Fig. 1 is a perspective view of the semiconductor device according to the first embodiment. The semiconductor device 1 according to the first embodiment is a transfer mold type module. A transfer mold type module refers to a module formed, for example, by fixing a semiconductor chip and electrodes connected to the semiconductor chip in a metal mold, pouring a molding resin into the metal mold, and hardening the resin.

[0011] 1, the semiconductor device 1 includes a semiconductor chip (not shown), a molded resin 2 that encapsulates the semiconductor chip, an electrode 3 that is partly encapsulated in the molded resin 2 and partly exposed to an opening 5 of the molded resin 2, and an electrode terminal 4 that is separated from the electrode 3 and is joined to the electrode 3 by metal bonding such as solder bonding, US bonding, or Ag bonding. Although not shown, the semiconductor chip is electrically connected to the electrode 3.

[0012] The molded resin 2 is, for example, a rectangular parallelepiped having six planes, and has a plurality of rectangular openings 5. The openings 5 ​​are provided on a pair of opposing sides on the upper surface of the molded resin 2. The openings 5 ​​are shaped to be open on the upper surface of the molded resin 2 and on a side surface adjacent to the upper surface and including the above-mentioned sides.

[0013] In this embodiment, two openings 5 ​​are provided, but for example, two or more openings may be provided. Also, openings 5 ​​may be provided at any position in mold resin 2. Also, openings 5 ​​may have a rectangular shape in a plan view seen from above the module as shown in FIG. 1, but may be changed to a semicircular, polygonal, or other shape in accordance with the shape of electrode terminal 4.

[0014] The opening 5 has a bottom surface 6. The bottom surface 6 has, for example, a surface parallel to the upper surface of the molded resin 2 and is located between the upper and bottom surfaces of the molded resin 2. An electrode electrically connected to the semiconductor chip is exposed on the bottom surface 6. In other words, the opening 5 provides a step at the portion of the electrode 3 of the semiconductor module 1, thereby locally exposing the electrode 3.

[0015] The opening 5 may have a tapered shape such that the cross-sectional area in a plane parallel to the electrode 3 increases in the direction from the bottom surface 6 toward the outside of the molded resin 2. Alternatively, the opening 5 may have a straight shape such that the cross-sectional area in a plane parallel to the electrode 3 in the direction from the bottom surface 6 toward the outside of the molded resin 2 is constant.

[0016] The electrode terminal 4 covers the electrode 3 and has a contact portion 9 located inside the opening 5 and in contact with the electrode 3, which has multiple projections 7 and 8. In FIG. 1, the electrode terminals 4 are connected to the two openings 5 ​​in the molded resin 2 in the same manner. Here, the projections 7 are referred to as first projections, and the projections 8 are referred to as second projections. However, the terms "first" and "second" do not indicate the functional priority of the components, but are merely used to distinguish the components as projections. The electrode terminal 4 will be described in more detail with reference to FIG. 2. As shown in FIG. 1, the electrode terminal 4 has a screw fastening hole 10 at an end portion different from the side that contacts the electrode 3.

[0017] 2 is an enlarged plan view of an opening 5 of the semiconductor device 1 according to the first embodiment and an electrode terminal 4 connected to an electrode 3 exposed in the opening 5. As shown in FIG. 2, the electrode terminal 4 has a contact portion 9 that covers the electrode 3 and is in electrical contact with the electrode 3. The electrode terminal 4 also has a contact end 11 at which the contact portion 9 is located and an open end 12 that is an end different from the contact end 11. The multiple first protrusions 7 are formed to surround the contact portion 9 and are provided between a side surface 13 of the opening 5 and the contact portion 9. The multiple first protrusions 7 are also provided at both ends of the contact portion 9 in the width direction of the electrode terminal 4.

[0018] The electrode terminal 4 has a second protrusion 8 at the contact end 11 of the contact portion 9. Although FIG. 2 shows an example in which two first protrusions 7 are provided at each end of the electrode terminal 4 in the width direction and one second protrusion 8 is provided at the contact end 11, the number of first protrusions 7 and second protrusions 8 is not limited to this. For example, the second protrusions 8 may not be provided, and one first protrusion 7 may be provided at each end of the electrode terminal 4 in the width direction, thereby ensuring a clearance around the electrode terminal 4. The first protrusions 7 and second protrusions 8 can ensure a clearance of 10 μm or more between the side surface 13 of the opening 5 and the contact portion 9.

[0019] In this way, by providing the electrode terminal 4 with the first protrusion 7 and the second protrusion 8, the electrode terminal 4 can be mounted by accurately positioning the joining position of the electrode terminal 4 to the electrode 3 through the outer shape matching between the side surface 13 of the opening 5 and the electrode terminal 4 having the protrusion. In addition, it becomes possible for the solder or the like serving as the joining material to creep up onto the side surface.

[0020] 2, the electrode terminal 4 has a screw fastening hole 10 (through hole) at an open end 12 for connecting the semiconductor device 1 to a higher-level system. As a method for connecting the semiconductor device 1 to a higher-level system through the open end 12, in addition to screw fastening, there may be patterns without the screw fastening hole 10, such as US (Ultrasonic) joining, welding, and joining using a joining material.

[0021] Fig. 3 shows a modified example of the electrode terminal 4 according to the first embodiment. The screw fastening holes 10 shown in Fig. 2 are omitted in Fig. 3. When the open end 12 of the semiconductor device device 1 is to be joined to a higher-level system by US joining, welding or a joining material, the electrode terminal 4 is configured as shown in Fig. 3. In this case, the screw fastening holes 10 shown in Fig. 2 can be omitted, and the manufacturing process of the electrode terminal 4 can be simplified.

[0022] Fig. 4 shows a modified example of the electrode terminal 4 according to the embodiment 1. As shown in Fig. 4, the open end 12 of the electrode terminal 14 extends in a direction different from that of the electrode terminal in the contact portion 9 on the extending surface of the electrode terminal 14. Since the positional accuracy of the open end 12 that connects to the upper system can be ensured by determining the three-dimensional position (x, y, z) of the electrode terminal, it is possible to freely lay out electrode terminals of various sizes and shapes different from the rectangular electrode terminal 4, for example.

[0023] Fig. 5 shows a modified example of the electrode terminal 4 according to the first embodiment. As shown in Fig. 5, the electrode terminal 14 may have a through hole 16 in the contact portion 9. The number of through holes 16 is not limited to one, and multiple through holes 16 may be provided. The shape of the through hole 16 is not limited to a circle, and may be a rectangle or a shape defined by a quadratic curve. Providing the through hole 16 improves the bond between the electrode terminal 14 and the electrode 3 using a bonding agent such as solder, and also makes it possible to check whether the bond is present or not.

[0024] Figures 6 and 7 show modified examples of the electrode terminal according to embodiment 1. More specifically, in Figure 6, the open end 12 side of the electrode terminal 14 shown in Figure 4 is bent upward. Figure 6 shows the semiconductor device 1 in Figure 4 as viewed from the outside of the molded resin 2 in the extension direction of the electrode terminal 14 at the contact portion 9.

[0025] Fig. 7 shows a modified example in which the electrode terminal 14 shown in Fig. 6 is further bent so as to be above the upper surface of the molded resin 2 and cover the electrode 3. In order to make the bent electrode terminal 14 easier to see, Fig. 7 shows a cross section of one side of the electrode 3 that is parallel to the extension direction of the electrode terminal 14 at the contact portion 9. Specifically, Fig. 6 shows a cross section corresponding to the AA' cross section in Fig. 2.

[0026] In Fig. 7, electrode terminal 14 has two bent portions 15 so that open end 12 is located on the upper surface of contact portion 9. As shown in Fig. 7, bent portions 15 are provided in two places between contact portion 9 and open end 12 of electrode terminal 15, and each bent portion 15 is bent by approximately 90° so that open end 12 is located on the upper surface of contact portion 9. The example of bent portion 15 is not limited to this, and open end 12 may be bent so as to be located on the lower surface of contact portion 9.

[0027] By bending the electrode terminals 14 in any direction as shown in Figures 6 and 7, the open terminals 12 of the electrode terminals 14 can be freely laid out, and it is also possible to arrange the mounting parts of the electrode terminals on the top surface of the transfer mold type power module.

[0028] Transfer type power modules are generally used as linked modules by connecting multiple modules of the same type, but because they are formed using a mold, the position and size of the terminals are fixed, making it difficult to freely arrange the layout. Therefore, if the electrode position of the module is changed, the shape of the transfer mold type power module must be changed, which means there are constraints such as changing the shape of the mold and frame and considering the entire manufacturing process.

[0029] According to this embodiment, it is possible to provide a semiconductor device that allows easy change of the electrode position of the module by separating the electrode terminals of the power module from the electrodes and accurately attaching the separated electrode terminals to the electrodes later.

[0030] 8 and 9 show the joint portion of the electrode terminal 4 according to the first embodiment. As shown in FIG. 8, the electrode terminal 4 is joined to the electrode 3 by an adhesive 17 such as solder or a solvent. The adhesive 17 escapes between the first protrusion 7 and the second protrusion 8 and the side surface 13 of the opening 5 and onto the surface of the electrode 3. The electrode terminal 4 can be joined by metal bonding such as US bonding, but in the case of joining by solder or a conductive adhesive, a clearance due to the protrusion is formed between the side surface 13 of the opening 5 and the electrode terminal 4, so that gas components such as the solvent can be easily discharged. In addition, the joining strength can be improved by forming a fillet of the joining material on the side surface of the electrode terminal 4. In the quality check of the terminal joining, the position of the first protrusion 7 and the second protrusion 8 can be checked by automatic appearance to check the positional deviation between the electrode terminal 4 and the electrode 3. This improves recognition and makes it easier to judge, so that the number of steps in manufacturing the semiconductor device can be reduced.

[0031] 10 is a diagram showing a modification of the first embodiment in which the opening 5 is sealed with a sealant 20. After the electrode terminal 4 is joined to the electrode 3, the opening 5 is filled with a sealant 20 such as gel or resin. This makes it possible to insulate the joint between the electrode terminal 4 and the electrode 3 from the outside, further improving quality and functionality. It also makes it easier to design products that maintain the surface and spatial insulation of the electrode terminal 4.

[0032] Embodiment 2 Fig. 11 is a diagram showing a semiconductor device according to a second embodiment. More specifically, Fig. 11 is an enlarged view of an electrode terminal 21 of the semiconductor device according to the second embodiment. In Fig. 11, configurations corresponding to those in the first embodiment are denoted by the same reference numerals. As shown in Fig. 11, the electrode terminal 21 according to the second embodiment has third protrusions 22 at both ends of the contact portion 9 in the width direction of the electrode terminal 21.

[0033] The opening 5 has recesses 23 at positions on the side surface 13 corresponding to the third protrusions. That is, the opening 5 has recesses 23 on both sides in the width direction of the electrode terminal 21 of the contact portion 9. The third protrusions 22 and the recesses 23 are engaged with each other.

[0034] Since the opening 5 has the recess 23 that engages with the third projection 22, the accuracy of positioning the electrode terminal 21 on the electrode 3 is further improved. In the second embodiment, the third projection 22 and the recess 23 are rectangular in shape, but the shape is not limited to this. In addition, by making the size of the third projection 22 smaller than the recess 23, the insertion of the electrode terminal 21 into the opening 5 becomes smoother, improving productivity.

[0035] Fig. 12 is a diagram showing a modified example of the electrode terminal according to the second embodiment. Fig. 12 shows an electrode terminal 21 shown in Fig. 11 further including the first protrusion 7 and the second protrusion 8 described in the first embodiment. More specifically, the electrode terminal 26 shown in Fig. 12 has a first protrusion 7 at each end in the width direction of the electrode terminal 26 at the contact portion 9, and further has a second protrusion 8 at the contact end portion 11 of the electrode terminal 26. Although the present disclosure shows an example in which the contact portion 9 is provided with the first protrusions 7 at two locations and the second protrusion 8 at one location, the number of protrusions may be more than this.

[0036] In addition to the third protrusion 22 that engages with the recess 23, the presence of the first protrusion 7 and the second protrusion 8 between the side surface 13 of the opening 5 and the contact portion 9 further improves the accuracy of positioning the electrode terminal 26 on the electrode 3.

[0037] Embodiment 3 Fig. 13 shows a cross section of an opening of a semiconductor device according to a third embodiment. More specifically, it is a diagram corresponding to the cross section BB' of the semiconductor device shown in Fig. 2. However, the shape of opening 5 shown in Fig. 2 is different in Fig. 13. Note that in the configuration shown in the third embodiment, the same reference numerals as those in the first or second embodiment indicate the same configuration, and therefore description thereof will be omitted.

[0038] 13, opening 28 includes straight portion 29 in which the cross section of opening 28 is constant in the direction from bottom 31 of opening 28 toward the outside of resin mold 2, and tapered portion 30 in which the cross section of opening 28 becomes larger in the direction from straight portion 29 toward the outside of molded resin 2. Here, the cross section of opening 28 refers to a plane parallel to electrode 3 and electrode terminal 4.

[0039] The depth of straight portion 28 is, for example, greater than the thickness of electrode 3. Here, the depth of straight portion 28 is the distance from bottom portion 31 in the thickness direction of electrode 3 or electrode terminal 4. Since an upper draft angle occurs at the opening of the transfer mold type power module in a normal die molding process, this upper draft angle corresponds to tapered portion 30.

[0040] The depth of straight portion 28 may be, for example, about 1 mm. The angle of tapered portion 30 with respect to the vertical direction may be set to, for example, 10°. The distance between terminal electrode 4 and straight portion 28 may be about 0 to 5 μm. By providing straight portion 29 and tapered portion 30 in opening 28 in this manner, the positioning accuracy of first projection 7, second projection 8, and third projection 22 of electrode terminal 4 in opening 28 can be improved.

[0041] Embodiment 4 FIG. 14 is a diagram showing an electrode terminal according to the fourth embodiment. As shown in FIG. 14, the electrode terminals are not flat, that is, formed on the same plane, but are curved upward or downward in the extension direction of the electrode terminal. That is, the electrode terminal 32 is curved so as to be convex downward with respect to the extension direction of the electrode terminal. On the other hand, the electrode terminal 33 is curved so as to be convex upward with respect to the extension direction of the electrode terminal 33. Note that the "upper" here refers to a side different from the electrode 3 when the electrode terminals 32 and 33 are installed on the electrode 3. Note that the same reference numerals in the configuration shown in the fourth embodiment as those in the first to third embodiments indicate the same configuration, and therefore description thereof will be omitted.

[0042] 14, the electrode terminals 32, 33 are warped so as to be convex downward in the width direction of the electrode terminal. That is, in the width direction of the electrode terminal, at least the cross section of the contact portion 9 of the electrode terminals 32, 33 is warped convexly toward the electrode 3. The convex warped shape may extend over the entire extension direction of the electrode terminals 32, 33, not just the contact portion 9. The cross-sectional shape of the electrode terminals 32, 33 will be described later with reference to FIG. 16.

[0043] As shown in Fig. 14, by joining electrode terminals that are not only flat but also curved (convex, concave) to electrode 3, a fuse effect can be obtained at the joint. For example, if the inside of the module is shorted for some reason while the module is installed in a facility, the electrode terminals 32, 33 become hot and the solder joining the electrode terminals 32, 33 melts. As a result, the electrode terminals 32, 33 themselves bounce up due to the repulsion of the electrode terminals 32, 33 that have been curved and bent in advance, and the joint state with the electrode 3 is dissolved, and the electrode 3 and the electrode terminals 32, 33 are electrically disconnected. The thickness of the electrode terminals 32, 33 can be, for example, 0.4 mm to 2 mm.

[0044] 15 and 16 are enlarged views of an electrode terminal according to the fourth embodiment. Fig. 16 shows a cross section of an opening of a semiconductor device according to the fourth embodiment. More specifically, it is a view corresponding to the cross section BB' of the semiconductor device shown in Fig. 2. Figs. 15 and 16 show electrode terminal 32 curved so as to be convex downward with respect to the extension direction of the electrode terminal, but are not limited thereto and may be electrode terminal 33 curved so as to be convex upward with respect to the extension direction of the electrode terminal.

[0045] As shown in FIG. 15 and FIG. 16, a step portion 34 is provided between both ends in the width direction of the contact portion 9 of the electrode terminal 32 and the electrode 3. The step portion 34 is, for example, provided between the first protrusion 7 and the electrode 34, and has a rectangular shape having a thickness that is long in the extension direction of the electrode terminal 32. The step portion 34 may be made of the same material as the molded resin 2, or may be made of a conductor used for electrodes, etc. In this way, by providing the step portion 34 inside the opening 5, i.e., between both ends in the width direction of the electrode terminal 32 and the electrode 3, a clearance can be secured in advance between the electrode terminal 32 and the electrode 3, and the terminal can be configured to be actively easily detached in the event of a short circuit, that is, to be easily disconnected. The thickness of the step portion 34 can be 0.05 mm to 1.00 mm.

[0046] Embodiment 5. Fig. 17 is a diagram showing an electrode terminal 35 according to embodiment 5. Fig. 18 is a diagram corresponding to the CC' cross section in Fig. 17. That is, Fig. 18 is a diagram showing a cross section of the molded resin 2, the opening 5 and the electrode terminal 35. As shown in Figs. 17 and 18, the electrode terminal 35 has a protrusion 36 between the contact portion 9 and the open end 12 of the electrode terminal 35. Note that in the configuration shown in embodiment 5, the same reference numerals as those in embodiments 1 to 4 indicate the same configuration, and therefore description thereof will be omitted.

[0047] 18, the molded resin 2 has a step-like protrusion 37 that engages with the protrusion 36. The protrusion 36 of the electrode terminal 35 is formed by bending the electrode terminal. The electrode terminal is positioned by providing the protrusion 36 on the electrode terminal 35 and having the step-like protrusion 37 that engages with the protrusion 36. The step-like protrusion 37 is highly accurate because, for example, a part of the molded resin is formed in an upwardly convex shape along the edge of the electrode 3. This further improves the positioning accuracy of the electrode terminal 35 to the electrode 3.

[0048] Embodiment 6 19 and 20 are diagrams showing an electrode terminal 38 according to embodiment 6. Fig. 20 shows a cross section of the molded resin 2, the opening 5 and the electrode terminal 38 corresponding to cross section DD' in Fig. 19. Embodiment 6 differs from the previous examples in that the electrode and the electrode terminal have through holes and that penetrating protrusions are provided which penetrate the through holes. Note that in the configuration shown in embodiment 6, the same reference numerals as those in embodiments 1 to 5 indicate the same configuration and therefore will not be described.

[0049] As shown in FIG. 20, the electrode 3 has a through hole 41 at a position where it contacts the contact portion 9 of the electrode terminal 38. The electrode terminal 38 also has a through hole 40 at a position corresponding to the through hole 41. That is, the through hole 40 and the through hole 41 communicate with each other in the thickness direction of the electrode 3 or the electrode terminal 38. Here, the through hole 41 is also referred to as the first through hole 41, and the through hole 40 is also referred to as the second through hole 40. The resin mold 2 is integrally formed with a through protrusion 42 that penetrates the through hole 40 and the through hole 41. This further improves the positioning accuracy of the electrode terminal 38 with respect to the electrode 3.

[0050] 19 and 20, through holes 40 and 41 and through protrusions 42 penetrating the through holes are provided in two locations each, but the present invention is not limited to this and any number of through holes may be provided. For example, by providing through holes and corresponding through protrusions in two or more locations, it is possible to prevent the electrode terminal 38 from shifting on the electrode 3, particularly the rotation of the electrode terminal 38 within the plane of the electrode terminal 38, and the positioning accuracy of the electrode terminal 38 with respect to the electrode 3 is further improved.

[0051] Fig. 21 shows a modified example of the through holes and through protrusions according to embodiment 6. Fig. 19 and Fig. 20 show a configuration in which the through holes 40, 41 and the corresponding through protrusions 42 are circular, but as shown in Fig. 21, the through hole 43 provided in the electrode terminal 38 and the corresponding through protrusion 44 may be rectangular. Although not shown, in this case, it is desirable that the through hole provided in the electrode 3 is also rectangular.

[0052] 22 and 23 show modified examples of the electrode terminal according to the sixth embodiment. In Figs. 22 and 23, the first protrusion 7 and the second protrusion 8 in Figs. 19 and 21 are omitted, respectively. The same reference numerals denote the same configurations except for the above. That is, in Fig. 22, an electrode terminal 47 that does not have the first protrusion 7 and the second protrusion 8 is joined to the electrode 3. The electrode terminal 47 has a circular through hole 41.

[0053] 23, an electrode terminal 48 that does not have a first protrusion 7 and a second protrusion 8 is joined to an electrode 3. The electrode terminal 48 has a rectangular through hole 43. In Figs. 22 and 23, the shapes of the through holes of the electrode 3 corresponding to the through holes 41, 43 and the through protrusions that are integrally provided in the molded resin 2 are similar to the configurations in Figs. 19 to 20, and therefore description thereof will be omitted.

[0054] As shown in Figures 22 and 23, by omitting the first protrusion 7 and the second protrusion 8, the positioning accuracy of the electrode terminals 47, 48 is ensured, the manufacturing process of the electrode terminals 47, 48 is simplified, and the manufacturing cost of the semiconductor device can be reduced.

[0055] Embodiment 7 Fig. 24 is an enlarged view of an electrode terminal 50 according to embodiment 7. As shown in Fig. 24, the electrode terminal 50 omits the first protrusion 7 and the second protrusion 8 in Fig. 2, and includes a plurality of protrusions 51 formed integrally with the molded resin 2 between the side surface 13 of the opening 5 of the molded resin 2 and the contact portion 9 of the electrode terminal 50. Note that in the configuration shown in embodiment 7, the same reference numerals as those in embodiments 1 to 6 indicate the same configuration, and therefore description thereof will be omitted.

[0056] 24, by providing the mold resin 2 with the positioning accuracy required for joining the electrode terminal 50 to the electrode 3, it is possible to ensure the same positioning accuracy as when a protrusion is provided on the electrode terminal 50. Also, an electrode terminal without a protrusion can be used. The distance between the opening 5 of the protrusion 51 and the terminal electrode 50 can be, for example, 10 μm.

[0057] Embodiment 8 Fig. 25 is a diagram showing a semiconductor device according to an eighth embodiment. As shown in Fig. 25, a configuration is shown in which a plurality of transfer mold type power modules are connected together as semiconductor devices for use. In the configuration shown in the eighth embodiment, the same reference numerals as those in the first to seventh embodiments indicate the same configuration, and therefore the description thereof will be omitted.

[0058] The semiconductor devices 1 are electrically connected to each other by connecting electrode terminals 52 to which the open ends of the electrode terminals are respectively connected. The connecting electrode terminals 52 have screw fastening holes 10 and are electrically connected to a higher-level system. This configuration can increase the capacity of the transfer mold type power module. Note that, although FIG. 25 shows an example in which one of the three semiconductor devices 1 is connected in parallel, the present invention is not limited to this and three or more semiconductor devices may be connected in parallel.

[0059] In the first to eighth embodiments, the semiconductor device is a transfer mold type module, but the present invention is not limited to this and can be applied to, for example, a case type module structure.

[0060] Embodiment 9 In this embodiment, the semiconductor device according to the above-mentioned embodiments 1 to 8 is applied to a power conversion device. Although the present invention is not limited to a specific power conversion device, the following will describe a case where the present invention is applied to a three-phase inverter as embodiment 9.

[0061] FIG. 26 is a block diagram showing a configuration of a power conversion system to which a power conversion device according to the ninth embodiment is applied. As shown in FIG.

[0062] The power conversion system shown in Fig. 26 includes a power source 100, a power conversion device 200, and a load 300. The power source 100 is a DC power source and supplies DC power to the power conversion device 200. The power source 100 can be configured from various sources, for example, a DC system, a solar cell, or a storage battery, or it may be configured from a rectifier circuit or an AC / DC converter connected to an AC system. The power source 100 may also be configured from a DC / DC converter that converts DC power output from a DC system into a predetermined power.

[0063] The power conversion device 200 is a three-phase inverter connected between the power source 100 and the load 300, converts DC power supplied from the power source 100 into AC power, and supplies the AC power to the load 300. As shown in Fig. 26, the power conversion device 200 includes a main conversion circuit 201 that converts DC power into AC power and outputs it, and a control circuit 203 that outputs a control signal for controlling the main conversion circuit 201 to the main conversion circuit 201.

[0064] The load 300 is a three-phase motor driven by AC power supplied from the power conversion device 200. The load 300 is not limited to a specific use, but is a motor mounted on various electric devices, and is used as, for example, a motor for a hybrid car, an electric car, a railroad car, an elevator, or an air conditioner.

[0065] The power conversion device 200 will be described in detail below. The main conversion circuit 201 includes switching elements and free wheel diodes (not shown), and converts DC power supplied from the power source 100 into AC power by switching the switching elements, and supplies the AC power to the load 300. There are various specific circuit configurations for the main conversion circuit 201, but the main conversion circuit 201 according to this embodiment is a two-level three-phase full bridge circuit, and can be configured from six switching elements and six free wheel diodes connected inversely in parallel to each switching element.

[0066] Each switching element and each freewheel diode of the main conversion circuit 201 is configured by a semiconductor device 202 corresponding to any one of the above-mentioned embodiments 1 to 8. The six switching elements are connected in series in pairs to configure upper and lower arms, and each upper and lower arm configures each phase (U phase, V phase, W phase) of the full bridge circuit. The output terminals of each upper and lower arm, i.e., the three output terminals of the main conversion circuit 201, are connected to a load 300.

[0067] The main conversion circuit 201 also includes a drive circuit (not shown) for driving each switching element, but the drive circuit may be built into the semiconductor device 202, or the drive circuit may be provided separately from the semiconductor device 202. The drive circuit generates drive signals for driving the switching elements of the main conversion circuit 201, and supplies the drive signals to control electrodes of the switching elements of the main conversion circuit 201.

[0068] Specifically, a drive signal for turning the switching element on and a drive signal for turning the switching element off are output to the control electrode of each switching element in accordance with a control signal from the control circuit 203 described later. When maintaining a switching element in the on state, the drive signal is a voltage signal (on signal) equal to or higher than the threshold voltage of the switching element, and when maintaining a switching element in the off state, the drive signal is a voltage signal (off signal) equal to or lower than the threshold voltage of the switching element.

[0069] The control circuit 203 controls the switching elements of the main conversion circuit 201 so that a desired power is supplied to the load 300. Specifically, based on the power to be supplied to the load 300, the control circuit 203 calculates the time for which each switching element of the main conversion circuit 201 should be in the ON state (ON time).

[0070] For example, the main conversion circuit 201 can be controlled by PWM control, which modulates the on-time of a switching element according to the voltage to be output. Then, a control command (control signal) is output to a drive circuit included in the main conversion circuit 201 so that an on signal is output to a switching element that should be in an on state at each point in time, and an off signal is output to a switching element that should be in an off state. In accordance with this control signal, the drive circuit outputs an on signal or an off signal as a drive signal to the control electrode of each switching element.

[0071] In the power conversion device according to this embodiment, the semiconductor devices according to the first to eighth embodiments are applied as the switching elements and free wheel diodes of the main conversion circuit 201, so that even if the electrode positions of the module are changed, it is possible to avoid the occurrence of costs, etc., associated with the change.

[0072] In the present embodiment, an example in which the present invention is applied to a two-level three-phase inverter has been described, but the present invention is not limited to this and can be applied to various power conversion devices. In the present embodiment, a two-level power conversion device is described, but a three-level or multi-level power conversion device may be used, and the present invention may be applied to a single-phase inverter when power is supplied to a single-phase load. In addition, the present invention can be applied to a DC / DC converter or an AC / DC converter when power is supplied to a DC load or the like.

[0073] Furthermore, the power conversion device to which the present invention is applied is not limited to the case where the above-mentioned load is an electric motor, but can also be used, for example, as a power supply device for an electric discharge machine, a laser processing machine, an induction heating cooker, or a non-contact power supply system, and can also be used as a power conditioner for a solar power generation system, a power storage system, etc.

[0074] In the figures described above, the same reference numerals denote the same or equivalent configurations, and this is common throughout the entire specification. In addition, the present disclosure allows the disclosed contents to be freely combined within the scope of the disclosure, and can be appropriately modified or omitted. In addition, although the embodiments of the present disclosure have been described above, the present disclosure is not limited to these embodiments. [Explanation of symbols]

[0075] Semiconductor device 1, molded resin 2, electrode 3, electrode terminal 4, opening 5, bottom surface 6, first projection 7, second projection 8, contact portion 9, screw fastening hole 10, contact end portion 11, open end portion 12, side surface of opening 13, electrode terminal 14, bent portion 15, through hole 16, adhesive 17, sealant 20, electrode terminal, third projection 22, recessed portion 23, terminal electrode 26, opening 28, straight portion 29, tapered portion 30, bottom portion 31, electrode terminal 32 33, stepped portion 34, electrode terminal 35, convex portion 36, stepped projection 37, electrode terminal 38 39, through hole 40 41, through projection 42, through hole 43, through projection 44, electrode terminal 47 48 50, connecting electrode terminal 52, power source 100, power conversion device 200, main conversion circuit 201, semiconductor device 202, control circuit 203, load 300

Claims

1. A semiconductor chip; a molding resin that encapsulates the semiconductor chip; an electrode electrically connected to the semiconductor chip and exposed in an opening provided in the molding resin; an electrode terminal including a contact portion that covers the electrode and is in electrical contact with the electrode, and a plurality of protrusions that are formed to surround the contact portion and are provided between the side surface of the opening portion and the contact portion, the electrode terminal having a contact end portion at which the contact portion is located and an open end portion that is an end portion different from the contact end portion; the protrusion includes a third protrusion provided on the contact portion of the electrode terminal, The opening has a recess with which the third protrusion engages.

2. A semiconductor chip; a molding resin that encapsulates the semiconductor chip; an electrode electrically connected to the semiconductor chip and exposed in an opening provided in the molding resin; an electrode terminal including a contact portion that covers the electrode and is in electrical contact with the electrode, and a plurality of protrusions that are formed to surround the contact portion and are provided between the side surface of the opening portion and the contact portion, the electrode terminal having a contact end portion at which the contact portion is located and an open end portion that is an end portion different from the contact end portion; The opening is a straight portion having a uniform cross-sectional area extending from a bottom of the opening toward an outer periphery of the molding resin; a tapered portion formed in a tapered shape such that a cross-sectional area increases from the straight portion toward an outer periphery of the molding resin; A semiconductor device having the above structure.

3. A semiconductor chip; a molding resin that encapsulates the semiconductor chip; an electrode electrically connected to the semiconductor chip and exposed in an opening provided in the molding resin; an electrode terminal including a contact portion that covers the electrode and is in electrical contact with the electrode, and a plurality of protrusions that are formed to surround the contact portion and are provided between the side surface of the opening portion and the contact portion, the electrode terminal having a contact end portion at which the contact portion is located and an open end portion that is an end portion different from the contact end portion; The electrode terminal has a through hole in the contact portion.

4. A semiconductor chip; a molding resin that encapsulates the semiconductor chip; an electrode electrically connected to the semiconductor chip and exposed in an opening provided in the molding resin; an electrode terminal including a contact portion that covers the electrode and is in electrical contact with the electrode, and a plurality of protrusions that are formed to surround the contact portion and are provided between the side surface of the opening portion and the contact portion, the electrode terminal having a contact end portion at which the contact portion is located and an open end portion that is an end portion different from the contact end portion; The electrode terminal is a semiconductor device in which a cross section of the contact portion in a width direction of the electrode terminal has a convex warp shape toward the electrode.

5. A semiconductor device as described in claim 4, further comprising a step portion between both widthwise ends of the contact portion of the electrode terminal and the electrode.

6. A semiconductor chip; a molding resin that encapsulates the semiconductor chip; an electrode electrically connected to the semiconductor chip and exposed in an opening provided in the molding resin; an electrode terminal including a contact portion that covers the electrode and is in electrical contact with the electrode, and a plurality of protrusions that are formed to surround the contact portion and are provided between the side surface of the opening portion and the contact portion, the electrode terminal having a contact end portion at which the contact portion is located and an open end portion that is an end portion different from the contact end portion; The semiconductor device, wherein the electrode terminal is warped upward or downward in an extension direction of the electrode terminal.

7. A semiconductor chip; a molding resin that encapsulates the semiconductor chip; an electrode electrically connected to the semiconductor chip and exposed in an opening provided in the molding resin; an electrode terminal including a contact portion that covers the electrode and is in electrical contact with the electrode, and a plurality of protrusions that are formed to surround the contact portion and are provided between the side surface of the opening portion and the contact portion, the electrode terminal having a contact end portion at which the contact portion is located and an open end portion that is an end portion different from the contact end portion; The electrode has a first through hole, the electrode terminal has a second through hole in the contact portion that communicates with the first through hole, The molding resin further includes a through-protrusion that passes through the first through-hole and the second through-hole.

8. A semiconductor chip; a molding resin that encapsulates the semiconductor chip; an electrode electrically connected to the semiconductor chip and exposed in an opening provided in the molding resin; an electrode terminal including a contact portion that covers the electrode and is in electrical contact with the electrode, and a plurality of protrusions that are formed to surround the contact portion and are provided between the side surface of the opening portion and the contact portion, the electrode terminal having a contact end portion at which the contact portion is located and an open end portion that is an end portion different from the contact end portion; the electrode terminal has a protrusion between the contact portion and the open end, The molding resin has a step-like protrusion that engages with the protrusion.

Citation Information

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