Indication device

Abstract

To provide a display device capable of blocking hydrogen flowing into transistors.SOLUTION: A display device according to an embodiment of the present disclosure comprises: a substrate having a non-display area with a through-hole and a display area surrounding the non-display area; a dam surrounding the through-hole on the substrate; a first hydrogen blocking layer surrounding the dam on the substrate; a first planarization layer disposed on the substrate and the first hydrogen blocking layer; and a second hydrogen blocking layer disposed on the first planarization layer to overlap with the first hydrogen blocking layer, and in a first contact hole in the first planarization layer to be in contact with the first hydrogen blocking layer.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] The present specification relates to a display device, and more particularly to a display device capable of blocking hydrogen from flowing into a transistor. [Background technology]

[0002] With the development of an information society, there is an increasing demand for display devices that display images, and display devices can be used in various types of devices such as TVs, monitors, tablet computers, navigation systems, game consoles, mobile phones, etc. Various types of display devices are used as such display devices, such as liquid crystal display devices (LCDs) and organic light emitting display devices (OLEDs).

[0003] Display devices are now equipped with optical components such as cameras and proximity sensors to provide users with more diverse functions. Optical components such as cameras must be exposed to the outside in order to recognize light, and therefore include notches or holes (e.g., Hole in Active Area; HiAA) formed within the display area. However, holes formed in the display area can serve as a path for released hydrogen gas to flow into transistors, increasing the conductivity of the transistors and potentially damaging them. Damaged transistors can cause high-brightness defects, such as bright spots and abnormal light emission, in the display device. Therefore, there is a need for a display device that can block hydrogen from flowing into the transistors, thereby improving manufacturing yields and display quality. Summary of the Invention [Problem to be solved by the invention]

[0004] The problem to be solved by this specification is to provide a display device that can block the path of hydrogen inflow into a transistor and prevent the transistor from becoming a conductor.

[0005] Another problem to be solved by the present invention is to provide a display device that minimizes deterioration in reliability due to high brightness defects such as bright spots and abnormal light emission.

[0006] The objects of this specification are not limited to the objects mentioned above, and other objects not mentioned will be clearly understood by those skilled in the art from the following description. [Means for solving the problem]

[0007] A display device according to one embodiment of the present specification may include a substrate including a non-display area including a through-hole and a display area surrounding the non-display area, a dam arranged on the substrate to surround the through-hole, a first hydrogen barrier layer arranged on the substrate to surround the dam, a first planarization layer arranged on the substrate and the first hydrogen barrier layer, and a second hydrogen barrier layer arranged on the first planarization layer to overlap the first hydrogen barrier layer and in a first contact hole of the first planarization layer to contact the first hydrogen barrier layer.

[0008] Further details of the embodiments are included in the detailed description and drawings.

[0009] In the present specification, by disposing a hydrogen barrier layer surrounding the planarization layer exposed by the through-hole, it is possible to prevent the penetration of hydrogen diffused from the through-hole or the sealing portion.

[0010] The present invention can prevent an oxide semiconductor layer from becoming a conductor due to hydrogen, thereby improving the reliability of a display device.

[0011] The present invention can improve screen defects such as bright spots and abnormal light emission.

[0012] The effects of this specification are not limited to the examples given above, and various other effects are included within this specification. [Brief explanation of the drawings]

[0013] [Figure 1] 1 is a schematic plan view of a display device according to an embodiment of the present specification; [Figure 2] FIG. 2 is a cross-sectional view taken along line II-II' in FIG. [Figure 3] FIG. 2 is an enlarged plan view of region A in FIG. [Figure 4] 4 is a cross-sectional view taken along line IV-IV' of FIG. 3. [Figure 5] FIG. 10 is a cross-sectional view of a display device according to another embodiment of the present specification. [Figure 6] FIG. 10 is a cross-sectional view of a display device according to still another embodiment of the present specification. [Figure 7] FIG. 10 is a cross-sectional view of a display device according to still another embodiment of the present specification. [Figure 8] FIG. 10 is a cross-sectional view of a display device according to still another embodiment of the present specification. DETAILED DESCRIPTION OF THE INVENTION

[0014] The advantages and features of the present invention, and methods for achieving them, will become more apparent from the following detailed description of the embodiments in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, and may be embodied in various different forms. The present embodiment is provided solely to ensure that the disclosure of the present invention is complete and to fully convey the scope of the embodiments of the present invention to those skilled in the art.

[0015] The shapes, areas, ratios, angles, numbers, etc. disclosed in the drawings for illustrating the embodiments of this specification are merely illustrative and should not be construed as limiting the scope of the embodiments of this specification. The same reference symbols refer to the same elements throughout the specification. Furthermore, when describing an embodiment of this specification, if a detailed description of related prior art is deemed to unnecessarily obscure the gist of the embodiment of this specification, such a detailed description will be omitted. When using words such as "include," "have," and "be made" in this specification, other parts may be added unless "only" is used. When a component is expressed in the singular, it also includes the plural unless otherwise explicitly stated.

[0016] When interpreting elements, they are interpreted as including a margin of error even if there is no other explicit description.

[0017] When describing a positional relationship, for example, when describing the positional relationship of two parts using "above," "at the top," "below," "next to," etc., one or more other parts may be located between the two parts, as long as "immediately" or "directly" is not used.

[0018] When an element or layer is referred to as "on" another element or layer, it includes the case where the element or layer is directly on top of the other element or layer, or where there are other layers or elements interposed therebetween.

[0019] Furthermore, although terms such as "first," "second," etc. are used to describe various components, these components are not limited by these terms. These terms are used merely to distinguish one component from another. Therefore, a first component referred to below may be a second component within the technical concept of this specification.

[0020] Like reference numbers refer to like elements throughout the specification.

[0021] The area and thickness of each structure shown in the drawings are shown for convenience of explanation, and an embodiment of this specification is not necessarily limited to the area and thickness of the structure shown.

[0022] The features of the various embodiments of this specification may be partially or wholly combined or combined with each other, may be technically interlocked and driven in various ways, and each embodiment may be implemented independently of the other or may be implemented together in a related relationship.

[0023] An embodiment of the present specification will be described below with reference to the drawings.

[0024] FIG. 1 is a schematic plan view of a display device according to an embodiment of the present specification.

[0025] 1, the display panel DP of the display device 100 is a panel on which an image is displayed, and may include display elements for displaying images, circuits, wiring, and components for driving the display elements. The display panel DP may include a display area AA and a non-display area NA. The non-display area NA may include through-holes TH.

[0026] The display area AA may be an area where a plurality of sub-pixels SP are arranged to display an image. Each of the sub-pixels SP is an individual unit that emits light, and a display element and a driving circuit may be formed in each of the sub-pixels SP. For example, a display element for displaying an image and a circuit unit for driving the display element may be arranged in the sub-pixels SP. In this case, if the display device 100 is an organic light-emitting display device, the display element may include an organic light-emitting element. If the display device 100 is a liquid crystal display device, the display element may include a liquid crystal element. The sub-pixels SP may include, but are not limited to, red, green, blue, and white sub-pixels. The driving circuit may include various transistors, storage capacitors, wiring, etc. for driving the sub-pixels SP. For example, the driving circuit may include, but is not limited to, various components such as a driving transistor, a switching transistor, a sensing transistor, a storage capacitor, a gate wiring, a data wiring, etc.

[0027] The non-display area NA is an area where no image is displayed, and may include a first non-display area NA1 and a second non-display area NA2.

[0028] The first non-display area NA1 is an area in which no image is displayed and is arranged to surround the display area AA. The first non-display area NA1 may be an area in which various wirings, driving ICs, etc. for driving the sub-pixels SP arranged in the display area AA are arranged. For example, various driving ICs, such as gate driving ICs and data driving ICs, may be arranged in the first non-display area NA1, but is not limited thereto. The first non-display area NA1 in which no image is displayed may be a bezel area, but the embodiments of the present specification are not limited thereto.

[0029] The second non-display area NA2 is an area where no image is displayed and is disposed within the display area AA. The second non-display area NA2 may include a through-hole TH. Optical sensor components such as a camera or a proximity sensor may be disposed in the through-hole TH. Since the second non-display area NA2 is an area within the display area AA where the through-hole TH is disposed, it may also be defined as a HiAA (Hole in Active Area) area. The second non-display area NA2 may correspond to a bezel area surrounding the through-hole TH.

[0030] The specific structure of one sub-pixel SP will be described below with reference to FIG.

[0031] FIG. 2 is a cross-sectional view taken along line II-II' of FIG.

[0032] Referring to FIGS. 1 and 2, a display device 100 includes a substrate 110, a transistor 130, an auxiliary electrode 141, a connecting electrode 142, and a light emitting element 150.

[0033] The substrate 110 is a support member for supporting other components of the display device 100 and may be made of an insulating material. For example, the substrate 110 may be made of glass or resin. The substrate 110 may also be made of a flexible material, including a polymer or plastic such as polyimide (PI).

[0034] A buffer layer 121 is disposed on the substrate 110. The buffer layer 121 can reduce the penetration of moisture or impurities through the substrate 110. The buffer layer 121 can also protect the transistor 130 from impurities such as alkali ions that are released from the substrate 110. The buffer layer 121 can also improve adhesion between the substrate 110 and a layer formed thereon. The buffer layer 121 can be formed of, for example, a single layer or multiple layers of silicon oxide (SiOx) or silicon nitride (SiNx), but is not limited thereto.

[0035] A transistor 130 is disposed on the buffer layer 121. The transistor 130 can drive the light emitting element 150. The transistor 130 can include an active layer 131, a gate electrode 132, a source electrode 133, and a drain electrode 134.

[0036] The active layer 131 is disposed on the buffer layer 121. The active layer 131 is a region where a channel is formed when the transistor 130 is driven. The active layer 131 may include a channel region, a source region, and a drain region. The active layer 131 may be made of a semiconductor material such as, but not limited to, an oxide semiconductor, amorphous silicon, or polysilicon.

[0037] A gate insulating layer 122 is disposed on the active layer 131. The gate insulating layer 122 is an insulating layer for insulating the active layer 131 from the gate electrode 132, and may be composed of a single layer or multiple layers of silicon oxide (SiOx) or silicon nitride (SiNx), but is not limited thereto.

[0038] The gate electrode 132 is disposed on the gate insulating layer 122. The gate electrode 132 is disposed on the gate insulating layer 122 so as to overlap with a channel region of the active layer 131. The gate electrode 132 may be made of a conductive material, such as, but not limited to, copper (Cu), gold (Au), silver (Ag), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof.

[0039] A first interlayer insulating layer 123 and a second interlayer insulating layer 124 are disposed on the gate electrode 132. Contact holes are formed in the first interlayer insulating layer 123 and the second interlayer insulating layer 124 to connect the source electrode 133 and the drain electrode 134 to the active layer 131, respectively. The first interlayer insulating layer 123 and the second interlayer insulating layer 124 may be formed of a single layer or multiple layers of silicon oxide (SiOx) or silicon nitride (SiNx), but are not limited thereto. The second interlayer insulating layer 124 may be formed of an organic material, for example, a single layer or multiple layers of polyimide or photo acrylic, but are not limited thereto.

[0040] The source electrode 133 and the drain electrode 134 are spaced apart from each other and disposed on the second interlayer insulating layer 124. The source electrode 133 and the drain electrode 134 are electrically connected to the active layer 131 through contact holes in the gate insulating layer 122, the first interlayer insulating layer 123, and the second interlayer insulating layer 124.

[0041] The source electrode 133 and the drain electrode 134 may be composed of multiple layers of a conductive material, such as, but not limited to, copper (Cu), gold (Au), silver (Ag), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof.

[0042] For example, the source electrode 133 and the drain electrode 134 may have a three-layer structure. The source electrode 133 and the drain electrode 134 may include a first layer, a second layer disposed on the first layer, and a third layer disposed on the second layer. The first and third layers may be made of titanium (Ti), and the second layer may be made of aluminum (Al), but are not limited thereto. Meanwhile, in FIG. 2, for convenience of illustration, the source electrode 133 and the drain electrode 134 are shown as a single layer.

[0043] The auxiliary electrode 141 is disposed between the first interlayer insulating layer 123 and the second interlayer insulating layer 124. That is, the auxiliary electrode 141 may be disposed on the first interlayer insulating layer 123. The auxiliary electrode 141 may be an electrode of a transistor other than the above-described transistor 130 or a storage capacitor, but is not limited thereto. The auxiliary electrode 141 may be made of a conductive material, for example, but is not limited to, copper (Cu), gold (Au), silver (Ag), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof.

[0044] A first planarization layer 125 and a second planarization layer 126 are disposed on the transistor 130. The first planarization layer 125 and the second planarization layer 126 are insulating layers that planarize the upper surface of the substrate 110. The first planarization layer 125 may include a contact hole for electrically connecting the transistor 130 and the connecting electrode 142. Specifically, the first planarization layer 125 may include a contact hole that exposes one of the source electrode 133 and the drain electrode 134 of the thin film transistor 130. The second planarization layer 126 may include a contact hole for electrically connecting the connecting electrode 142 and the first electrode 151. The first planarization layer 125 and the second planarization layer 126 may be made of an organic material, for example, but not limited to, a single layer or multiple layers of polyimide or photo acrylic.

[0045] The connecting electrode 142 is disposed between the first planarization layer 125 and the second planarization layer 126. The connecting electrode 142 is an electrode for connecting the source electrode 133 of the transistor 130 and the first electrode 151 of the light emitting element 150. The connecting electrode 142 may be formed of a multi-layer structure made of a conductive material such as, but not limited to, copper (Cu), gold (Au), silver (Ag), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof.

[0046] For example, the connecting electrode 142 may have a three-layer structure. For example, the connecting electrode 142 may include a first layer, a second layer disposed on the first layer, and a third layer disposed on the second layer. The first and third layers may be made of titanium (Ti), and the second layer may be made of aluminum (Al), but are not limited thereto. Meanwhile, in FIG. 2, for convenience of illustration, the connecting electrode 142 is shown as a single layer.

[0047] The light-emitting element 150 is disposed on the second planarization layer 126. The light-emitting element 150 may be disposed in the display area AA. The light-emitting element 150 includes a first electrode 151, a light-emitting layer 152, and a second electrode 153. Here, the first electrode 151 may be an anode electrode, and the second electrode 153 may be a cathode electrode.

[0048] Meanwhile, the display device 100 may be implemented as a top emission or bottom emission type. In the top emission type, a reflective layer may be disposed under the first electrode 151 to reflect light emitted from the light emitting layer 152 toward the second electrode 153. For example, the reflective layer may include a material with excellent reflectivity, such as aluminum (Al) or silver (Ag), but is not limited thereto. Conversely, in the bottom emission type, the first electrode 151 may be made of only a transparent conductive material. Hereinafter, it will be assumed that the display device 100 according to an embodiment of the present specification is a top emission type.

[0049] The first electrodes 151 are disposed on the second planarization layer 126. The first electrodes 151 may correspond to each of the plurality of subpixels SP. That is, the first electrodes 151 may be electrically connected to the connecting electrodes 142 through contact holes formed in the second planarization layer 126. The first electrodes 151 may also be electrically connected to the source electrodes 133 of the transistors 130 through the connecting electrodes 142. The first electrodes 151 may be made of a conductive material with a high work function to supply holes to the light-emitting layer 152. For example, the first electrodes 151 may be made of a transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), etc., but are not limited thereto.

[0050] A bank 127 is disposed on the first electrode 151 and the second planarization layer 126. The bank 127 may be formed on the second planarization layer 126 to cover the edge of the first electrode 151. The bank 127 is an insulating layer disposed between the sub-pixels SP to separate the sub-pixels SP. The bank 127 may be made of an organic insulating material. For example, the bank 127 may be made of polyimide, acrylic, or benzocyclobutene (BCB)-based resin, but is not limited thereto.

[0051] The light-emitting layer 152 is disposed on the first electrode 151 and the bank 127. The light-emitting layer 152 may be formed across the entire surface of the substrate 110. That is, the light-emitting layer 152 may be a common layer formed in common to a plurality of sub-pixels SP. The light-emitting layer 152 may be an organic layer for emitting light of a specific color. For example, the light-emitting layer 152 may be one of a red light-emitting layer, a green light-emitting layer, a blue light-emitting layer, and a white light-emitting layer. In this case, if the light-emitting layer 152 is configured as a white light-emitting layer, a color filter may be further disposed on the light-emitting element 150. The light-emitting layer 152 may further include various layers such as a hole transport layer, a hole injection layer, a hole blocking layer, an electron injection layer, an electron blocking layer, an electron transport layer, etc.

[0052] The second electrode 153 is disposed on the light-emitting layer 152. The second electrode 153 may be formed as a single layer across the entire surface of the substrate 110. That is, the second electrode 153 may be a common layer formed in common to a plurality of sub-pixels SP. The second electrode 153 supplies electrons to the light-emitting layer 152 and may be made of a conductive material with a low work function. The second electrode 153 may be formed of, for example, a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO), a metal alloy such as MgAg, or an ytterbium (Yb) alloy, and may further include a metal doping layer, but is not limited thereto.

[0053] A sealing unit 160 is disposed on the light emitting element 150. The sealing unit 160 protects the light emitting element 150 from moisture and the like that penetrates from the outside of the display device 100. The sealing unit 160 includes a first sealing layer 161, a foreign matter cover layer 162, and a second sealing layer 163.

[0054] The first sealing layer 161 is disposed on the second electrode 153 and can suppress the penetration of moisture and oxygen. The first sealing layer 161 can be made of an inorganic material such as silicon nitride (SiNx), silicon oxynitride (SiNxOy), or aluminum oxide (AlyOz), but is not limited thereto.

[0055] The foreign substance cover layer 162 is disposed on the first sealing layer 161 to planarize the surface. The foreign substance cover layer 162 can cover foreign substances or particles that may be generated during the manufacturing process. The foreign substance cover layer 162 can be made of an organic material, such as silicon oxycarbonate (SiOxCz), acrylic or epoxy resin, but is not limited thereto.

[0056] The second encapsulation layer 163 is disposed on the foreign material cover layer 162 and can suppress the penetration of moisture and oxygen, like the first encapsulation layer 161. In this case, the second encapsulation layer 163 and the first encapsulation layer 161 can be formed to seal the foreign material cover layer 162. Therefore, the second encapsulation layer 163 can more effectively reduce moisture and oxygen that penetrates into the light emitting device 150. The second encapsulation layer 163 can be made of an inorganic material such as, but not limited to, silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiNxOy), or aluminum oxide (AlyOz).

[0057] A touch sensing unit may be disposed on the encapsulation unit 160. For example, a touch buffer layer 171 may be disposed on the third encapsulation layer 1163, and a touch electrode may be disposed on the touch buffer layer 171.

[0058] The touch electrode TE may include a touch sensor metal TS and a bridge metal BRG located in different layers, and an inter-touch insulating layer 173 may be disposed between the touch sensor metal TS and the bridge metal BRG.

[0059] The touch interlayer insulating layer 173 may be made of an organic material or an inorganic material, and may be formed in a structure in which an inorganic layer and an organic layer are stacked.

[0060] The touch buffer layer 171 and the touch interlayer insulating layer 173 may be arranged to eliminate a step at the point where the touch electrode TE is arranged and to provide electrical insulation.

[0061] A touch-planarization layer 181 may be disposed on the touch sensing unit. The touch-planarization layer 181 may be an organic layer for planarizing and protecting the upper surface of the touch sensing unit. For example, the touch-planarization layer 181 may be formed of an organic material such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

[0062] Fig. 3 is an enlarged plan view of region A in Fig. 1, and Fig. 4 is a cross-sectional view taken along line IV-IV' in Fig. 3. For convenience of illustration, Fig. 3 shows only a plurality of data lines DL, a dam DAM, and a hydrogen barrier layer 190 among various components of the display device 100.

[0063] 3 and 4, the second non-display area NA2 of the non-display area NA includes the through-hole TH, a dam DAM surrounding the through-hole TH, a plurality of patterns PT, a hydrogen barrier layer 190, and a plurality of data lines DL bypassing the through-hole TH. Here, the second non-display area NA2 may refer to the through-hole TH and the surrounding area surrounding the through-hole TH where no image is displayed.

[0064] The through-holes TH are formed in the second non-display area NA2. The through-holes TH may be formed to physically penetrate from the substrate 110 through the encapsulating portion 160. The through-holes TH may be formed to correspond to a camera or an optical sensor. The through-holes TH may allow light to easily pass through above an optical component such as a camera or an optical sensor.

[0065] The dam DAM is disposed to surround the through hole TH. The dam DAM may be disposed between the through hole TH and the display area AA. In this case, the dam DAM may be disposed closer to the through hole TH than the data line DL passing through the second non-display area NA2. The dam DAM may also be disposed closer to the through hole TH than the hydrogen barrier layer 190. For example, the dam DAM may completely surround the through hole TH, and the hydrogen barrier layer 190 may completely surround the dam DAM. The hydrogen barrier layer 190 and the dam DAM may have a circular shape or a shape corresponding to the through hole in plan view, but the embodiment is not limited thereto. The dam DAM prevents the foreign material cover layer 162, which is part of the encapsulation unit 160, from overflowing into the through hole TH. That is, the dam DAM is a structure for preventing the foreign material cover layer 162 of the encapsulation unit 160, which protects the light emitting element, from invading or leaking into the through hole TH. Although the dam DAM is shown as being singular in FIGS. 3 and 4, the number of dams DAM is not limited to this and may be plural.

[0066] Such a dam DAM may be formed in the shape of a closed curve surrounding the outer contour of the through-hole TH. The dam DAM can prevent overflow of the foreign substance cover layer 162. Therefore, the foreign substance cover layer 162 may be formed by the dam DAM from the display area AA to the inside of the dam DAM.

[0067] The dam DAM includes a first sub-dam DAMa and a second sub-dam DAMb on the first sub-dam DAMa. The first sub-dam DAMa may be formed of the same material as the second planarization layer 126 at the same time. The second sub-dam DAMb may be formed of the same material as the bank layer 127 at the same time. However, the material and the number of layers of the dam DAM are not limited thereto.

[0068] The plurality of patterns PT may be formed in the shape of a closed curve surrounding the outer periphery of the through-hole TH. The plurality of patterns PT may be disposed between the hydrogen barrier layer 190 and the dam DAM and between the dam DAM and the through-hole TH. The plurality of patterns PT may also be disposed at a predetermined distance from each other. Although FIG. 4 shows two patterns PT disposed on the left side of the dam DAM and six patterns PT disposed on the right side thereof, the present invention is not limited thereto.

[0069] The plurality of patterns PT include a first layer PT1, a second layer PT2 disposed on the first layer PT1, and a third layer PT3 disposed on the second layer PT2. The plurality of patterns PT are disposed on the second interlayer insulating layer 124 and may be made of the same material and have the same shape as the first hydrogen barrier layer 191 or the second hydrogen barrier layer 195.

[0070] The first layer PT1 and the third layer PT3 may include a titanium (Ti)-based material, which has excellent hydrogen trapping capabilities. Titanium (Ti) is a metal with hydrogen adsorption capabilities and can effectively block hydrogen. However, without being limited thereto, the first layer PT1 and the third layer PT3 may be composed of a titanium (Ti) alloy or titanium dioxide (TiO2). For example, the first layer PT1 and the third layer PT3 may include, in addition to titanium (Ti), scandium (Sc), vanadium (V), lead (Pd), niobium (Nb), zirconium (Zr), yttrium (Y), tantalum (Ta), cerium (Ce), lanthanum (La), samarium (Sm), uranium (U), and other materials with excellent hydrogen adsorption capabilities.

[0071] The second layer PT2 may include a conductive material, such as, but not limited to, aluminum (Al), copper (Cu), gold (Au), silver (Ag), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof.

[0072] The multiple patterns PT can prevent moisture from penetrating into the display area AA through the light-emitting layer 152. That is, the light-emitting layer 152, which is vulnerable to moisture penetration, can have a disconnected structure due to the multiple patterns PT. Specifically, the second layer PT2 of the multiple patterns PT can have a lower surface smaller than the upper surface of the first layer PT1, and the third layer PT3 can have a lower surface larger than the upper surface of the second layer PT2. Therefore, the light-emitting layer 152 disposed above the multiple patterns PT can be interrupted by the multiple patterns PT. For example, the cross section of each of the multiple patterns PT can have a mushroom shape, anvil shape, or inverted tapered shape, and can have eaves or protrusions to form undercut areas. The multiple patterns PT interrupt the light-emitting layer 152 to block or prevent moisture from penetrating into the display area. Therefore, even if moisture penetrates through the light-emitting layer 152 exposed on the side of the through-hole TH, the disconnected structure of the light-emitting layer 152 can prevent the penetrated moisture from moving into the display area AA. In addition, the first sealing layer 161 on the light-emitting layer 152 may be disposed to completely cover the disconnected light-emitting layer 152. Therefore, even if moisture permeates through the light-emitting layer 152, the first sealing layer 161 may more effectively block the movement of moisture. Meanwhile, although FIG. 4 shows that only the light-emitting layer 152 is disposed below the sealing portion 160, a second electrode 153 may be further disposed between the sealing portion 160 and the light-emitting layer 152.

[0073] The plurality of data lines DL may be disposed on the second interlayer insulating layer 124 and the first planarization layer 125. In this case, the plurality of data lines DL may be disposed closer to the display area AA than the hydrogen barrier layer 190. That is, the plurality of data lines DL may be disposed farther from the dam DAM and the through-hole TH than the hydrogen barrier layer 190. In this case, the plurality of data lines DL may be disposed between the first hydrogen barrier layer 191 and the second hydrogen barrier layer 195 and the transistor 130, and may be disposed to bypass or extend the through-hole TH in the second non-display area NA2.

[0074] The plurality of data lines DL may include a first data line DL1 disposed on the second interlayer insulating layer 124 and a second data line DL2 disposed on the first planarization layer 125.

[0075] The first data line DL1 may be formed on the second interlayer insulating layer 124 using the same material as the source electrode 133, the drain electrode 134, and the first hydrogen barrier layer 191. That is, the first data line DL1 may be formed simultaneously with the source electrode 133, the drain electrode 134, and the first hydrogen barrier layer 191.

[0076] The first data wiring DL1 includes a first layer DLa, a second layer DLb disposed on the first layer DLa, and a third layer DLc disposed on the second layer DLb.

[0077] The second layer DLb of the first data wiring DL1 may have a lower surface smaller than the upper surface of the first layer DLa. Also, the third layer DLc may have a lower surface larger than the upper surface of the second layer DLb. Therefore, the first data wiring DL1 may be formed such that the first layer DLa and the third layer DLc disposed at the upper and lower portions of the first data wiring DL1 have the largest widths, and the second layer DLb disposed at the center has the smallest width. For example, the cross section of the data line may have a shape similar to a plurality of patterns PT.

[0078] The first layer DLa and the third layer DLc may include a titanium (Ti)-based material with excellent hydrogen capture capabilities. Titanium (Ti) is a metal with hydrogen adsorption capabilities and can effectively block hydrogen. However, without being limited thereto, the first layer DLa and the third layer DLc may be composed of a titanium (Ti) alloy or titanium dioxide (TiO2). For example, the first layer DLa and the third layer DLc may include, in addition to titanium (Ti), scandium (Sc), vanadium (V), lead (Pd), niobium (Nb), zirconium (Zr), yttrium (Y), tantalum (Ta), cerium (Ce), lanthanum (La), samarium (Sm), uranium (U), and other materials with excellent hydrogen adsorption capabilities.

[0079] The second layer DLb may include a conductive material, such as, but not limited to, aluminum (Al), copper (Cu), gold (Au), silver (Ag), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof.

[0080] The second data line DL2 may be formed on the first planarization layer 125 using the same material as the connecting electrode 142 and the second hydrogen barrier layer 195. The second data line DL2 may be formed simultaneously with the connecting electrode 142 and the second hydrogen barrier layer 195.

[0081] The second data wiring DL2 includes a first layer, a second layer disposed on the first layer, and a third layer disposed on the second layer.

[0082] The second layer of the second data wiring DL2 may have a lower surface smaller than the upper surface of the first layer, and the third layer may have a lower surface larger than the upper surface of the second layer. Therefore, the second data wiring may be formed in such a manner that the first and third layers disposed at the top and bottom of the second data wiring have the largest widths, and the second layer disposed in the center has the smallest width.

[0083] The first and third layers may contain titanium (Ti)-based materials, which have excellent hydrogen capture capabilities. Titanium (Ti) is a metal with hydrogen adsorption capabilities and can effectively block hydrogen. However, without being limited thereto, the first and third layers may be composed of titanium (Ti) alloys or titanium dioxide (TiO2). For example, the first and third layers may contain, in addition to titanium (Ti), scandium (Sc), vanadium (V), lead (Pd), niobium (Nb), zirconium (Zr), yttrium (Y), tantalum (Ta), cerium (Ce), lanthanum (La), samarium (Sm), uranium (U), and other materials with excellent hydrogen adsorption capabilities.

[0084] The second layer may include a conductive material, such as, but not limited to, aluminum (Al), copper (Cu), gold (Au), silver (Ag), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof.

[0085] The hydrogen barrier layer 190 may be disposed to surround the dam DAM. The hydrogen barrier layer 190 may be disposed between the dam DAM and the display area AA. In this case, the hydrogen barrier layer 190 may be disposed adjacent to a plurality of data lines DL passing through the second non-display area NA2 from the dam DAM. The hydrogen barrier layer 190 may be disposed in a closed loop shape surrounding the dam DAM with the through-hole TH at the center.

[0086] The hydrogen barrier layer 190 may include a first hydrogen barrier layer 191 and a second hydrogen barrier layer 195 .

[0087] The first hydrogen barrier layer 191 may be disposed on the second interlayer insulating layer 124. The first hydrogen barrier layer 191 may be disposed on the second interlayer insulating layer 124 and may be made of the same material as the source electrode 133, the drain electrode 134, and the first data line DL. The first hydrogen barrier layer 191 may include titanium (Ti). That is, the first hydrogen barrier layer 191 may be formed simultaneously with the source electrode 133, the drain electrode 134, and the first data line DL.

[0088] The first hydrogen barrier layer 191 may include a first layer 191a, a second layer 191b disposed on the first layer 191a, and a third layer 191c disposed on the second layer 191b.

[0089] The second layer 191b of the first hydrogen barrier layer 191 may have a lower surface that is smaller than the upper surface of the first layer 191a. In addition, the third layer 191c may have a lower surface that is larger than the upper surface of the second layer 191b. Therefore, the first hydrogen barrier layer 191 may be formed such that the first layers 191a and third layers 191c disposed at the top and bottom of the first hydrogen barrier layer 191 are the widest, and the second layer 191b disposed in the center is the narrowest.

[0090] The first layer 191a and the third layer 191c may include a titanium (Ti)-based material, which has excellent hydrogen trapping capabilities. Titanium (Ti) is a metal with hydrogen adsorption capabilities and can effectively block hydrogen. However, without being limited thereto, the first layer 191a and the third layer 191c may be formed of a titanium (Ti) alloy or titanium dioxide (TiO2). For example, the first layer 191a and the third layer 191c may include, in addition to titanium (Ti), scandium (Sc), vanadium (V), lead (Pd), niobium (Nb), zirconium (Zr), yttrium (Y), tantalum (Ta), cerium (Ce), lanthanum (La), samarium (Sm), uranium (U), and other materials with excellent hydrogen adsorption capabilities.

[0091] The second layer 191b may include a conductive material, such as, but not limited to, aluminum (Al), copper (Cu), gold (Au), silver (Ag), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof.

[0092] Meanwhile, the first planarization layer 125 is disposed on the second interlayer insulating layer 124, the plurality of data lines DL, and the first hydrogen blocking layer 191.

[0093] The second hydrogen blocking layer 195 is disposed on the first planarization layer 125 so as to overlap the first hydrogen blocking layer 191. The second hydrogen blocking layer 195 is disposed in the first contact hole C1 of the first planarization layer 125 and can be in contact with the first hydrogen blocking layer 191.

[0094] The second hydrogen barrier layer 195 may be made of the same material as the connecting electrode 142. The second hydrogen barrier layer 195 may include titanium (Ti). The second hydrogen barrier layer 195 may be formed on the first planarization layer 125 at the same time as the connecting electrode 142.

[0095] The second hydrogen barrier layer 195 can include a first layer 195a, a second layer 195b disposed on the first layer 195a, and a third layer 195c disposed on the second layer 195b.

[0096] The second layer 195b of the second hydrogen barrier layer 195 may have a lower surface that is smaller than the upper surface of the first layer 195a. Also, the third layer 195c may have a lower surface that is larger than the upper surface of the second layer 195b. Therefore, the second hydrogen barrier layer 195 may be formed such that the first and third layers 195a and 195c disposed at the top and bottom of the second hydrogen barrier layer 195 are the widest, and the second layer 195b disposed in the center is the narrowest.

[0097] The first layer 195a and the third layer 195c may include a titanium (Ti)-based material, which has excellent hydrogen trapping capabilities. Titanium (Ti) is a metal with hydrogen adsorption capabilities and can effectively block hydrogen. However, without being limited thereto, the first layer 195a and the third layer 195c may be composed of a titanium (Ti) alloy or titanium dioxide (TiO2). For example, the first layer 195a and the third layer 195c may include, in addition to titanium (Ti), scandium (Sc), vanadium (V), lead (Pd), niobium (Nb), zirconium (Zr), yttrium (Y), tantalum (Ta), cerium (Ce), lanthanum (La), samarium (Sm), uranium (U), and other materials with excellent hydrogen adsorption capabilities.

[0098] The second layer 195b may include a conductive material, such as, but not limited to, aluminum (Al), copper (Cu), gold (Au), silver (Ag), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof.

[0099] The hydrogen barrier layer 190 may be electrically floating. Specifically, the first hydrogen barrier layer 191 and the second hydrogen barrier layer 195 may be electrically floating. That is, the hydrogen barrier layer 190 may be maintained in an electrically floating state without any voltage being applied thereto. For example, the hydrogen barrier layer 190 may include a plurality of dummy data lines (e.g., hydrogen barrier layers) completely surrounding the through-hole TH. The plurality of dummy data lines may be connected to each other and may have a mesh-type barrier structure, a bird's nest-type structure, a multi-layered walled structure, or the like, but the embodiments are not limited thereto. Therefore, the plurality of dummy data lines (e.g., hydrogen barrier layers) may form a coupling structure that more effectively prevents hydrogen or other gases that have flowed through the through-hole TH from reaching the transistors in the display area AA. This reliably protects the transistors in the display area AA.

[0100] The hydrogen barrier layer 190 may block the path of hydrogen entering the transistor 130 through the first planarization layer 125. That is, the hydrogen barrier layer 190 may have a hydrogen barrier structure that blocks the path of hydrogen diffusing from the inside of the encapsulation unit 160 or the through-hole TH from entering through the side of the first planarization layer 125. Specifically, as described above, the hydrogen barrier layer 190 may be made of a material with excellent hydrogen collection ability and may be disposed to completely cover the side of the first planarization layer 125 with the second hydrogen barrier layer 195 connected to the first hydrogen barrier layer 191 through the first contact hole C1. For example, the first contact hole C1 extends from the lower surface of the second hydrogen barrier layer 195 to the upper surface of the first hydrogen barrier layer 191, blocking the space between the first hydrogen barrier layer 191 and the second hydrogen barrier layer 195 with the first planarization layer 125. In addition, the hydrogen barrier layer 190 is arranged in a closed loop shape around the through-hole TH to surround the dam DAM. Therefore, even if hydrogen diffuses from the sealing portion 160 or the through-hole TH, the hydrogen barrier structure of the hydrogen barrier layer 190 can prevent the hydrogen from entering the transistor 130 in the display area AA.

[0101] Generally, to place an optical component such as a camera within the display area, a through-hole is formed within the display area, and the optical component is placed in a region corresponding to the through-hole. When a through-hole is formed within the display area, hydrogen diffused from the encapsulation portion through the side portion of the planarization layer may penetrate into the planarization layer. Furthermore, if the penetrated hydrogen reaches the active layer of a transistor, the transistor may become conductive. Furthermore, the conductive transistor may cause high brightness defects such as bright spots and abnormal light emission in the display device.

[0102] Therefore, in the display device 100 according to an embodiment of the present disclosure, the hydrogen barrier layer 190 is disposed to cover the side surface of the first planarization layer 125, thereby blocking the hydrogen inflow path. Specifically, the hydrogen barrier layer 190 is disposed to completely cover the side surface of the first planarization layer 125 through the second hydrogen barrier layer 195 connected to the first hydrogen barrier layer 191 through the first contact hole C1, thereby blocking the path through which hydrogen diffused from the encapsulation unit 160 can penetrate into the first planarization layer 125 through the side surface of the first planarization layer 125. In addition, the hydrogen barrier layer 190 is disposed in a closed loop shape around the through-hole TH to surround the dam DAM, thereby preventing hydrogen diffused from the encapsulation unit 160 or the through-hole TH from entering the transistor 130 in the display area AA. Therefore, in the display device 100 according to an embodiment of the present disclosure, the hydrogen barrier layer 190 is disposed to prevent the oxide semiconductor layer from becoming conductive due to hydrogen, thereby improving the reliability of the display device 100. Therefore, in the display device 100 according to an embodiment of the present disclosure, it is possible to prevent the transistor 130 from becoming conductive due to hydrogen, thereby minimizing high brightness defects such as bright spots and abnormal light emission.

[0103] 5 is a cross-sectional view of a display device according to another embodiment of the present specification. The display device 200 of FIG. 5 differs from the display device 100 of FIG. 1 to FIG. 4 only in the hydrogen barrier layer 290, and other components are substantially the same, so redundant description will be omitted.

[0104] Referring to FIG. 5, the hydrogen barrier layer 290 includes a second hydrogen barrier layer 295 disposed to overlap the first hydrogen barrier layer 191. For example, the hydrogen barrier layer 290 may be formed by stacking a plurality of dummy data lines that completely surround the through hole TH or form a ring. In this case, the second hydrogen barrier layer 295 may be in contact with the first hydrogen barrier layer 191 through the first contact hole C1' in the first planarization layer 125. Here, there may be a plurality of first contact holes C1'. For example, a plurality of dummy data lines (e.g., hydrogen barrier layers) may be stacked and in contact with each other through the plurality of contact holes to form a ring-shaped combined walled structure that can completely protect the side of the first planarization layer 125. That is, the first layer 295a of the second hydrogen barrier layer 295 may be in contact with the first hydrogen barrier layer 191 through a plurality of first contact holes C1' penetrating the first planarization layer 125. Therefore, the second hydrogen barrier layer 295 can contact the first hydrogen barrier layer 191 through the plurality of contact holes C1' of the first planarization layer 125 and completely cover the side surface of the first planarization layer 125. Although the number of the plurality of first contact holes C1' is shown as two in FIG. 5, the number is not limited thereto.

[0105] Therefore, in a display device 200 according to another embodiment of the present disclosure, a hydrogen inflow path can be blocked by disposing a hydrogen barrier layer 290 to cover the side surface of the first planarization layer 125. Specifically, the hydrogen barrier layer 190 is disposed to completely cover the side surface of the first planarization layer 125 with the second hydrogen barrier layer 195 connected to the first hydrogen barrier layer 191 through the first contact hole C1, blocking a path through which hydrogen diffused from the encapsulation unit 160 can penetrate into the first planarization layer 125 through the side surface of the first planarization layer 125. This can suppress or prevent hydrogen from diffusing from the through-hole TH from entering the transistor 130 in the display area AA.

[0106] In addition, a display device 200 according to another embodiment of the present disclosure includes a hydrogen barrier layer 290 that connects the first hydrogen barrier layer 191 and the second hydrogen barrier layer 295 through a plurality of first contact holes C1' in the first planarization layer 125. This arrangement reliably blocks the hydrogen inflow path even if some of the first contact holes C1' are disconnected. That is, the first contact holes C1 are configured to cover the side surfaces of the first planarization layer 125, and may be disconnected due to an impact, exposing the side surfaces of the first planarization layer 125. In this case, the hydrogen barrier layer 290 is arranged to completely cover the side surfaces of the first planarization layer 125 with the second hydrogen barrier layer 295 that is connected to the first hydrogen barrier layer 191 through the plurality of first contact holes C1'. This arrangement more reliably blocks the path through which hydrogen diffused from the encapsulation unit 160 can penetrate into the first planarization layer 125 through the side surfaces of the first planarization layer 125. For example, the contact holes C' may have a multi-wall structure. The contact holes C' may also be formed to extend around the through-hole TH in a closed loop shape corresponding to the hydrogen barrier layer, but the embodiment is not limited thereto. Therefore, in the display device 200 according to another embodiment of the present invention, the hydrogen barrier layer 290 including the first hydrogen barrier layer 191 and the second hydrogen barrier layer 295 connected through the first contact holes C1' is disposed, thereby more stably blocking the hydrogen inflow path and preventing the oxide semiconductor layer, which is the active layer 131 of the transistor 130, from becoming conductive due to hydrogen, thereby improving the reliability of the display device 200.

[0107] 6 is a cross-sectional view of a display device according to another embodiment of the present disclosure. The display device 200 of FIG. 6 differs from the display device 100 of FIGS. 1 to 4 only in that it includes a hydrogen barrier layer 390 (e.g., a third hydrogen barrier layer 399). The other components are substantially the same, and therefore, redundant description will be omitted.

[0108] Referring to FIG. 6, the hydrogen barrier layer 390 may include a first hydrogen barrier layer 191 , a second hydrogen barrier layer 195 and a third hydrogen barrier layer 399 .

[0109] The third hydrogen barrier layer 399 is disposed on the second hydrogen barrier layer 195. Specifically, the third hydrogen barrier layer may be disposed on the second planarization layer 126 to overlap the second hydrogen barrier layer 195. The third hydrogen barrier layer may be disposed in the second contact hole C2 of the second planarization layer 126 and may be in contact with the second hydrogen barrier layer 195. For example, the hydrogen barrier layer 390 may have a triple layer walled structure that covers both side surfaces of the first planarization layer 125 and the second planarization layer 126, as well as the top surface of the second planarization layer 126.

[0110] The third hydrogen blocking layer 399 may include a titanium (Ti)-based material that has excellent hydrogen trapping capabilities. Titanium (Ti) is a metal with hydrogen adsorption capabilities and can effectively block hydrogen. However, without being limited thereto, the third hydrogen blocking layer 399 may be composed of a titanium (Ti) alloy or titanium dioxide (TiO2). For example, in addition to titanium (Ti), the third hydrogen blocking layer 399 may include scandium (Sc), vanadium (V), lead (Pd), niobium (Nb), zirconium (Zr), yttrium (Y), tantalum (Ta), cerium (Ce), lanthanum (La), samarium (Sm), uranium (U), and other materials that have excellent hydrogen adsorption capabilities.

[0111] The hydrogen barrier layer 390 may be electrically floating. Specifically, the first hydrogen barrier layer 191, the second hydrogen barrier layer 195, and the third hydrogen barrier layer 399 may be electrically floating. That is, no voltage is applied to the hydrogen barrier layer 390, and the hydrogen barrier layer 390 may be maintained in an electrically floating state.

[0112] The hydrogen barrier layer 390 may block the path of hydrogen from entering the transistor 130 through the first planarization layer 125 and the second planarization layer 126. That is, the hydrogen barrier layer 390 may have a hydrogen barrier structure that blocks the path of hydrogen diffusing from the inside of the encapsulation unit 160 or the through-hole TH from entering through the side surfaces of the first planarization layer 125 and the second planarization layer 126. Specifically, as described above, the hydrogen barrier layer 390 may be made of a material with excellent hydrogen collection ability and may be disposed to completely cover the side surfaces of the first planarization layer 125 with the second hydrogen barrier layer 195 connected to the first hydrogen barrier layer 191 through the first contact hole C1, and may be disposed to completely cover the side surfaces of the second planarization layer 126 with the third hydrogen barrier layer 399 connected to the second hydrogen barrier layer 195 through the second contact hole C2. Through the second hydrogen barrier layer 195 and the second contact hole C2, for example, the second contact hole C2 extends from the lower surface of the third hydrogen barrier layer 399 to the upper surface of the second hydrogen barrier layer 195, thereby isolating the space between the second hydrogen barrier layer 195 and the third hydrogen barrier layer 399 with the second planarization layer 126. The hydrogen barrier layer 390 is also arranged in a closed loop shape, surrounding the dam DAM with the through hole TH at the center. The contact hole may be formed in a closed loop or ring shape and filled with metal to completely seal the side of the planarization layer, but is not limited thereto. Therefore, even if hydrogen diffuses from the sealing portion 160 or the through hole TH, the hydrogen barrier structure of the hydrogen barrier layer 190 can prevent it from entering the transistor 130 in the display area AA.

[0113] Therefore, in the display device 300 according to another embodiment of the present disclosure, the hydrogen barrier layer 390 is disposed to cover the side surfaces of the first planarization layer 125 and the second planarization layer 126, thereby blocking a path for hydrogen inflow. Specifically, the hydrogen barrier layer 390 is disposed to completely cover the side surfaces of the first planarization layer 125 by the second hydrogen barrier layer 195 connected to the first hydrogen barrier layer 191 through the first contact hole C1, and completely cover the side surfaces of the second planarization layer 126 by the third hydrogen barrier layer 399 connected to the second hydrogen barrier layer 195 through the second contact hole C2. This blocks a path through which hydrogen diffused from the sealing portion 160 through the side surfaces of the first planarization layer 125 and the second planarization layer 126 can penetrate into the first planarization layer 125 and the second planarization layer 126. Therefore, in the display device 300 according to another embodiment of the present specification, the hydrogen barrier layer 390 is disposed to prevent the transistor 130 from becoming conductive due to hydrogen, thereby minimizing high brightness defects such as bright spots and abnormal light emission, thereby improving the reliability of the display device 300.

[0114] 7 is a cross-sectional view of a display device according to another embodiment of the present disclosure. The display device 400 of FIG. 7 differs from the display device 300 of FIG. 6 only in the hydrogen barrier layer 490, and the other components are substantially the same, so redundant description will be omitted.

[0115] Referring to FIG. 7, the hydrogen barrier layer 490 may include a first hydrogen barrier layer 191 , a second hydrogen barrier layer 195 and a third hydrogen barrier layer 499 .

[0116] The hydrogen barrier layer 490 includes a third hydrogen barrier layer 499 disposed to overlap the second hydrogen barrier layer 195. The third hydrogen barrier layer 499 may be in contact with the second hydrogen barrier layer 195 through the second contact holes C2' in the second planarization layer 126. The number of second contact holes C2' may be multiple. Specifically, the number of second contact holes C2' may be two or more. For example, the third hydrogen barrier layer 499 may be connected to the second hydrogen barrier layer 195 through three or more contact holes. The contact holes may be formed in a closed loop or ring shape and filled with metal to completely seal the side of the planarization layer, but are not limited thereto. That is, the third hydrogen barrier layer 499 may be in contact with the second hydrogen barrier layer 195 through a plurality of second contact holes C2' penetrating the second planarization layer 126. Therefore, the third hydrogen barrier layer 499 can contact the second hydrogen barrier layer 195 through the plurality of contact holes C2' in the second planarization layer 126 and completely cover the side surface of the second planarization layer 126. Although the number of the plurality of second contact holes C2' is shown as three in FIG. 7, the number is not limited to three.

[0117] The third hydrogen blocking layer 499 may include a titanium (Ti)-based material that has excellent hydrogen trapping capabilities. Titanium (Ti) is a metal with hydrogen adsorption capabilities and can effectively block hydrogen. However, without being limited thereto, the third hydrogen blocking layer 499 may be composed of a titanium (Ti) alloy or titanium dioxide (TiO2). For example, in addition to titanium (Ti), the third hydrogen blocking layer 399 may include scandium (Sc), vanadium (V), lead (Pd), niobium (Nb), zirconium (Zr), yttrium (Y), tantalum (Ta), cerium (Ce), lanthanum (La), samarium (Sm), uranium (U), and other materials that have excellent hydrogen adsorption capabilities.

[0118] Therefore, the display device 400 according to another embodiment of the present disclosure may block a hydrogen inflow path by disposing the hydrogen barrier layer 490 to cover the side surfaces of the first planarization layer 125 and the second planarization layer 126. Specifically, the hydrogen barrier layer 490 is disposed to completely cover the side surfaces of the first planarization layer 125 by the second hydrogen barrier layer 195 connected to the first hydrogen barrier layer 191 through the first contact hole C1, and completely cover the side surfaces of the second planarization layer 126 by the third hydrogen barrier layer 499 connected to the second hydrogen barrier layer 195 through a plurality of second contact holes C2′. This may block a path through which hydrogen diffused from the sealing portion 160 may penetrate into the first planarization layer 125 and the second planarization layer 126 through the side surfaces of the first planarization layer 125 and the second planarization layer 126.

[0119] In addition, a display device 400 according to another embodiment of the present disclosure may stably block the hydrogen inflow path even if some of the second contact holes C2' are disconnected by disposing a hydrogen barrier layer 490 in which the second hydrogen barrier layer 195 and the third hydrogen barrier layer 499 are connected by a plurality of contact holes C2' in the second planarization layer 126. That is, the second contact holes C2 are configured to cover the side surfaces of the second planarization layer 126, and may be disconnected due to an impact, exposing the side surfaces of the second planarization layer 126. In this case, the hydrogen barrier layer 490 is disposed to completely cover the side of the second planarization layer 126 through the second hydrogen barrier layer 195 connected to the second hydrogen barrier layer 195 through the plurality of second contact holes C2′, and can more reliably block the path through which hydrogen diffusing from the encapsulation unit 160 can penetrate into the second planarization layer 126 through the side of the second planarization layer 126 (e.g., the plurality of contact holes can be filled with metal, and can serve as backup walls even if one of the contact holes is damaged). Therefore, the display device 400 according to another embodiment of the present disclosure has the hydrogen barrier layer 490 disposed therein, which can prevent the transistor 130 from becoming conductive due to hydrogen, thereby minimizing high-brightness defects such as bright spots and abnormal light emission, and improving the reliability of the display device 400.

[0120] 8 is a cross-sectional view of a display device according to another embodiment of the present disclosure. The display device 500 of FIG. 8 differs from the display device 400 of FIG. 7 only in that it has a hydrogen barrier layer 590, and the other components are substantially the same, so redundant description will be omitted.

[0121] Referring to FIG. 8, the hydrogen barrier layer 590 may include a first hydrogen barrier layer 191 , a second hydrogen barrier layer 395 and a third hydrogen barrier layer 499 .

[0122] The second hydrogen barrier layer 395 may be in contact with the first hydrogen barrier layer 191 through the first contact holes C1' in the first planarization layer 125. Here, the number of first contact holes C1' may be multiple. That is, the first layer 395a of the second hydrogen barrier layer 395 may be in contact with the first hydrogen barrier layer 191 through the multiple first contact holes C1' penetrating the first planarization layer 125. Thus, the second hydrogen barrier layer 395 may be in contact with the first hydrogen barrier layer 191 through the multiple contact holes C1' in the first planarization layer 125, thereby completely covering the side surfaces of the first planarization layer 125. Although the number of first contact holes C1' is shown as two in FIG. 8, the number is not limited to two.

[0123] Therefore, in the display device 500 according to another embodiment of the present disclosure, the hydrogen barrier layer 590 is disposed to cover the side surfaces of the first planarization layer 125 and the second planarization layer 126, thereby blocking a hydrogen inflow path. Specifically, the hydrogen barrier layer 590 is disposed to completely cover the side surfaces of the first planarization layer 125 through the second hydrogen barrier layer 395 connected to the first hydrogen barrier layer 191 through the plurality of first contact holes C1', and completely cover the side surfaces of the second planarization layer 126 through the third hydrogen barrier layer 499 connected to the second hydrogen barrier layer 395 through the plurality of second contact holes C2'. This prevents hydrogen from diffusing from the sealing portion 160 through the side surfaces of the first planarization layer 125 and the second planarization layer 126 from penetrating into the first planarization layer 125 and the second planarization layer 126. Therefore, although the number of the plurality of second contact holes C2' is shown as three in FIG. 8, the number is not limited to three. The number of second contact holes C2' may be greater than the number of first contact holes C1'. For example, in FIG. 8, the number of second contact holes C2' is three and the number of first contact holes C1' is two, but this is not limited to this.

[0124] In addition, in a display device 500 according to another embodiment of the present disclosure, the first contact holes C1' in the first planarization layer 125 may connect the first hydrogen barrier layer 191 and the second hydrogen barrier layer 395. The second contact holes C2' in the second planarization layer 126 may connect the second hydrogen barrier layer 395 and the third hydrogen barrier layer 499. This allows the contact holes to be filled with metal to form a large, closed-loop or ring-shaped multilayer wall structure surrounding the through-hole TH. Therefore, even if one or more of the first contact holes C1' and the second contact holes C2' are disconnected, the hydrogen barrier layer 590 can more reliably block a path through which hydrogen diffused from the encapsulation portion 160 through the side portions of the first planarization layer 125 and the second planarization layer 126 can penetrate into the first planarization layer 125 and the second planarization layer 126. Therefore, in the display device 500 according to another embodiment of the present specification, the hydrogen barrier layer 590 is disposed to prevent the transistor 130 from becoming conductive due to hydrogen, thereby minimizing high brightness defects such as bright spots and abnormal light emission, thereby improving the reliability of the display device 400.

[0125] According to the embodiments of the present disclosure, the hydrogen barrier layers disposed on the planarization layers block the flow of hydrogen into the transistors in the display region. The contact holes connect the hydrogen barrier layers disposed on the different planarization layers, and the combined structure can completely cover the side surfaces of the planarization layers. Furthermore, by providing multiple contact holes between the hydrogen barrier layers, the ability to block the inflow of hydrogen can be further improved even if one of the contact holes is damaged by an impact.

[0126] Display devices according to various embodiments of the present disclosure can be described as follows.

[0127] A display device according to one embodiment of the present specification includes a substrate including a non-display area including a through-hole and a display area surrounding the non-display area, a dam arranged to surround the through-hole, a first hydrogen barrier layer arranged to surround the dam, a first planarization layer arranged on the first hydrogen barrier layer, a second hydrogen barrier layer arranged on the first planarization layer to surround the dam and overlapping with the first hydrogen barrier layer, and a first contact hole formed in the first planarization layer to surround the dam, wherein the first hydrogen barrier layer can be in contact with the second hydrogen barrier layer through the first contact hole.

[0128] According to another feature of the present specification, the first contact hole may include a plurality of first contact holes.

[0129] According to another feature of the present specification, the display device further includes a transistor disposed on the substrate in the display region, and the first hydrogen blocking layer may be made of the same material as a source electrode or a drain electrode of the transistor.

[0130] According to another feature of the present specification, the display device may further include a connecting electrode disposed on the first planarization layer and connected to the transistor, a second planarization layer covering the first planarization layer, the connecting electrode, and the second hydrogen barrier layer, and a light-emitting element disposed on the second planarization layer and connected to the connecting electrode, wherein the connecting electrode and the second hydrogen barrier layer may be made of the same material.

[0131] According to another feature herein, the first hydrogen barrier layer and the second hydrogen barrier layer can include titanium (Ti).

[0132] According to another feature of the present specification, the display device may further include a plurality of data wirings disposed between the first hydrogen barrier layer and the second hydrogen barrier layer and the transistor, and the plurality of data wirings may be disposed to bypass or extend through the through-hole.

[0133] According to another feature herein, the first hydrogen barrier layer and the second hydrogen barrier layer may be electrically floating.

[0134] According to another feature of the present specification, the display device may further include a second planarization layer disposed on the first planarization layer and covering the second hydrogen blocking layer, and a third hydrogen blocking layer disposed on the second planarization layer, the third hydrogen blocking layer overlapping at least a portion of the second hydrogen blocking layer so as to surround the dam, the second planarization layer including a second contact hole surrounding the dam, and the second hydrogen blocking layer being in contact with the third hydrogen blocking layer.

[0135] According to another feature of the present specification, the second contact hole may include a plurality of second contact holes.

[0136] According to another feature herein, the third hydrogen barrier layer can include titanium (Ti).

[0137] According to another feature herein, the first hydrogen barrier layer, the second hydrogen barrier layer, and the third hydrogen barrier layer may be electrically floating.

[0138] According to another feature of the present specification, the width of the third hydrogen barrier layer may be wider than the width of the second hydrogen barrier layer, and the width of the second hydrogen barrier layer may be wider than the width of the first hydrogen barrier layer.

[0139] According to another feature of the present specification, the first contact hole may include a plurality of first contact holes, and the second contact hole may include a plurality of second contact holes, and the number of the second contact holes may be greater than the number of the first contact holes.

[0140] According to another feature of the present specification, the display device further includes a plurality of patterns disposed between the first hydrogen barrier layer and the dam and between the dam and the through-hole, and the plurality of patterns may be made of the same material as the first hydrogen barrier layer or the second hydrogen barrier layer and have the same shape.

[0141] According to another feature of the present specification, each of the plurality of patterns can include a first layer, a second layer disposed on the first layer and having a lower surface smaller than the upper surface of the first layer, and a third layer disposed on the second layer and having a lower surface larger than the upper surface of the second layer.

[0142] Meanwhile, a display device according to another embodiment of the present specification includes a plurality of subpixels arranged in a display region of a substrate, a through hole formed in a non-display region of the substrate, a first hydrogen barrier layer surrounding the through hole, a first planarization layer arranged on the first hydrogen barrier layer and covering the first hydrogen barrier layer, a second hydrogen barrier layer arranged on the first planarization layer and surrounding the through hole, and a first contact hole formed in the first planarization layer and surrounding the through hole, and the first hydrogen barrier layer may be in contact with the second hydrogen barrier layer through the first contact hole.

[0143] According to another feature of the present specification, the first contact hole may include a plurality of first contact holes, and the first hydrogen barrier layer may contact the second hydrogen barrier layer through the plurality of first contact holes.

[0144] According to another feature herein, the first hydrogen barrier layer and the second hydrogen barrier layer may cover sides of the first planarization layer.

[0145] According to another feature of the present specification, the display device may further include a second planarization layer disposed on the first planarization layer and covering the second hydrogen blocking layer, a third hydrogen blocking layer disposed on the second planarization layer and surrounding the through hole, and a second contact hole formed in the second planarization layer and surrounding the through hole, and the second hydrogen blocking layer may be in contact with the third hydrogen blocking layer through the second contact hole.

[0146] According to another feature of the present specification, the first contact hole may include a plurality of first contact holes, the first hydrogen barrier layer may contact the second hydrogen barrier layer through the plurality of first contact holes, the second contact hole may include a plurality of second contact holes, and the third hydrogen barrier layer may contact the second hydrogen barrier layer through the plurality of second contact holes.

[0147] According to another feature of the present specification, the first hydrogen barrier layer, the first contact hole, and the second hydrogen barrier layer may form a wall structure in the shape of a closed loop or a ring.

[0148] According to another feature of the present specification, the display device may further include a plurality of data lines disposed in a display region of the substrate, and the first hydrogen barrier layer and the second hydrogen barrier layer may be dummy data lines including the same material as the plurality of data lines.

[0149] According to another feature of the present specification, the dummy data wiring may be stacked in a ring shape so as to surround the through-hole.

[0150] Although the embodiments of the present specification have been described in more detail above with reference to the accompanying drawings, the present specification is not necessarily limited to these embodiments and may be variously modified within the scope of the technical concept of the present specification. Therefore, the embodiments disclosed in the present specification are intended to be illustrative rather than limiting the technical concept of the present specification, and the scope of the technical concept of the present specification is not limited by these embodiments. Therefore, the above-described embodiments should be understood to be illustrative in all respects and not restrictive. All technical concepts within the scope of the claims of the present specification should be construed as being within the scope of the present specification.

Claims

1. a substrate including a non-display area including a through-hole and a display area surrounding the non-display area; a dam disposed so as to surround the through-hole; a first hydrogen barrier layer disposed to surround the dam; a first planarization layer disposed on the first hydrogen barrier layer; a second hydrogen barrier layer disposed on the first planarization layer to surround the dam and overlap at least a portion of the first hydrogen barrier layer; and a first contact hole formed in the first planarization layer to surround the dam; The first hydrogen barrier layer contacts the second hydrogen barrier layer through the first contact hole.

2. The display device according to claim 1 , wherein the first contact hole includes a plurality of first contact holes.

3. further comprising a transistor disposed on the substrate in the display region; The display device of claim 1 , wherein the first hydrogen barrier layer includes the same material as a source electrode or a drain electrode of the transistor.

4. a connection electrode disposed on the first planarization layer and connected to the transistor; a second planarization layer disposed on the first planarization layer and covering the connecting electrode and the second hydrogen barrier layer; and a light emitting device disposed on the second planarization layer and connected to the connecting electrode, The display device of claim 3 , wherein the connecting electrode and the second hydrogen barrier layer include the same material.

5. The display device of claim 4 , wherein the first hydrogen barrier layer and the second hydrogen barrier layer contain titanium (Ti).

6. a plurality of data lines disposed between the first hydrogen barrier layer and the transistor, and between the second hydrogen barrier layer and the transistor; The display device according to claim 4 , wherein the plurality of data wirings are arranged to bypass the through-hole or extend around the through-hole.

7. The display device of claim 1 , wherein the first hydrogen barrier layer and the second hydrogen barrier layer are electrically floating.

8. a second planarization layer disposed on the first planarization layer and covering the second hydrogen barrier layer; and a third hydrogen barrier layer disposed on the second planarization layer; the third hydrogen barrier layer surrounds the dam and overlaps at least a portion of the second hydrogen barrier layer; the second planarization layer includes a second contact hole surrounding the dam; The display device of claim 1 , wherein the second hydrogen barrier layer contacts the third hydrogen barrier layer through the second contact hole.

9. The display device according to claim 8 , wherein the second contact hole includes a plurality of second contact holes.

10. The display device of claim 8 , wherein the third hydrogen blocking layer includes titanium (Ti).

11. The display device of claim 8 , wherein the first hydrogen barrier layer, the second hydrogen barrier layer, and the third hydrogen barrier layer are electrically floating.

12. The display device of claim 11 , wherein the width of the third hydrogen barrier layer is wider than both the width of the second hydrogen barrier layer and the width of the first hydrogen barrier layer.

13. the first contact hole includes a plurality of first contact holes, and the second contact hole includes a plurality of second contact holes; The display device of claim 12 , wherein the number of the second contact holes is greater than the number of the first contact holes.

14. The method further includes a plurality of patterns disposed between the first hydrogen barrier layer and the dam and between the dam and the through-hole, The display device of claim 1 , wherein the plurality of patterns include the same material as the first hydrogen barrier layer or the second hydrogen barrier layer.

15. Each of the plurality of patterns is 1st layer, a second layer disposed on the first layer and having a lower surface smaller than the upper surface of the first layer; and 15. The display device of claim 14, further comprising a third layer disposed on the second layer and having a lower surface larger than an upper surface of the second layer.

16. a plurality of sub-pixels disposed in a display region of the substrate; a through hole formed in a non-display area of ​​the substrate; a first hydrogen barrier layer surrounding the through-hole; a first planarization layer disposed on the first hydrogen barrier layer and covering the first hydrogen barrier layer; a second hydrogen barrier layer disposed on the first planarization layer and surrounding the through-hole; a first contact hole formed in the first planarization layer and surrounding the through hole; The first hydrogen barrier layer contacts the second hydrogen barrier layer through the first contact hole.

17. the first contact hole includes a plurality of first contact holes; The display device of claim 16 , wherein the first hydrogen barrier layer contacts the second hydrogen barrier layer through the first contact holes.

18. A display device as described in Claim 16, wherein the second hydrogen blocking layer covers the side surface of the first planarization layer by contacting the first hydrogen blocking layer through the first contact hole in the first planarization layer.

19. a second planarization layer disposed on the first planarization layer and covering the second hydrogen barrier layer; a third hydrogen barrier layer disposed on the second planarization layer and surrounding the through-hole; and a second contact hole formed in the second planarization layer and surrounding the through hole, The display device of claim 16 , wherein the second hydrogen barrier layer contacts the third hydrogen barrier layer through the second contact hole.

20. the first contact hole includes a plurality of first contact holes, and the first hydrogen barrier layer contacts the second hydrogen barrier layer through the plurality of first contact holes; 20. The display device of claim 19, wherein the second contact hole includes a plurality of second contact holes, and the third hydrogen barrier layer contacts the second hydrogen barrier layer through the plurality of second contact holes.

21. The display device of claim 19, wherein the first hydrogen barrier layer, the first contact hole, and the second hydrogen barrier layer form a wall structure in a closed loop shape or a ring shape.

22. Further comprising a plurality of data wirings disposed in the display area of ​​the substrate; The display device of claim 19 , wherein the first hydrogen barrier layer and the second hydrogen barrier layer are dummy data lines containing the same material as the plurality of data lines.

23. The display device according to claim 22 , wherein the dummy data wirings are stacked in a concentric ring shape so as to surround the through-hole.

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