Electronic devices

Abstract

To provide an electronic device capable of mounting a bridge with high positional accuracy on a wiring layer.SOLUTION: An electronic device 1 includes bridges 31 (31A, 31B) for electrically connecting a plurality of electronic components 20 (20A, 20B, 20C), and a wiring layer 4 having wiring. The bridges 31 (31A, 31B) are metallurgically bonded to the wiring layer 4. The bridges 31 have a bridge wiring 311 for electrically connecting a plurality of electronic components 20 to each other.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to an electronic device.

Background Art

[0002] Patent Document 1 discloses a technique for connecting a plurality of semiconductor chips to each other with an interconnection chip.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] Prior Document 1 does not consider the positional accuracy when fixing the bridge.

[0005] An object of the present invention is to provide an electronic device capable of mounting a bridge on a wiring layer with high positional accuracy.

Means for Solving the Problems

[0006] The electronic device according to the present invention includes a bridge that electrically connects a plurality of electronic components and a wiring layer having wiring, and the bridge is metallically joined to the wiring layer.

Effects of the Invention

[0007] According to the present invention, it is possible to provide an electronic device capable of mounting a bridge on a wiring layer with high positional accuracy.

Brief Description of the Drawings

[0008] [Figure 1] It is a cross-sectional view of an electronic device according to an embodiment of the present invention. [Figure 2]Figure 1 is a cross-sectional view of a disassembled electronic device. [Figure 3] This is a top view of an electronic device according to one embodiment. [Figure 4A] This figure shows the manufacturing process of a bridge for an electronic device according to one embodiment, and is a diagram showing the glass substrate preparation process. [Figure 4B] This figure shows the via-filling process, in which vias are embedded in through-holes formed in a glass substrate to form part of a bridge through-via. [Figure 4C] This figure shows the process of forming an insulating film on a glass substrate, where a bridge insulating layer is formed. [Figure 4D] This figure shows a bridge wiring formation process in which bridge wiring is formed on a bridge insulation layer. [Figure 4E] This figure shows the process of forming an insulating film on bridge wiring, forming a bridge insulating layer. [Figure 4F] This figure shows the via-filling process, in which vias are used to fill openings formed in the bridge insulation layer to create bridge-penetrating vias. [Figure 4G] This diagram shows the bridge wiring formation process. [Figure 4H] This diagram shows the bump electrode formation process. [Figure 5A] This figure shows a layer lamination process of an electronic device according to one embodiment, and is a diagram showing a release layer formation process in which a release layer is formed on a panel carrier. [Figure 5B] This diagram shows the wiring formation process for forming the first layer line wiring. [Figure 5C] This diagram shows the wiring layer formation process, which involves forming a wiring layer and an insulating layer. [Figure 5D] This diagram shows the bridge mounting process, which involves mounting a bridge on a wiring layer. [Figure 5E] This is a diagram showing the resist film formation process. [Figure 5F] This figure shows the pillar formation process, in which vias are used to fill holes formed in a resist film to create pillars. [Figure 5G] This figure shows the resist film removal process, which involves removing the resist film. [Figure 5H] It is a diagram showing a molding process of covering a bridge and a pillar with an insulating layer. [Figure 5I] It is a diagram showing a grinding process of grinding the surface of the insulating layer. [Figure 5J] It is a diagram showing an electrode forming process of forming an electrode with a thin film metal. [Figure 5K] It is a diagram showing an electronic component mounting process of mounting an electronic component on a connection layer. [Figure 5L] It is a diagram showing a molding process of covering an electronic component with an insulating layer. [Figure 5M] It is a diagram showing a grinding process of grinding the surface of the insulating layer. [Figure 5N] It is a diagram showing a panel carrier removing process of removing a panel carrier. [Figure 5O] It is a diagram showing a bump electrode forming process of forming a bump electrode on a wiring layer. [Figure 6A] It is a top view external appearance diagram of the bridge of a modification example of the present embodiment. [Figure 6B] It is a top view external appearance diagram of the connection layer of a modification example of the present embodiment. [Figure 6C] It is a diagram showing an alignment process in a bridge mounting process of mounting a bridge on a wiring layer.

Mode for Carrying Out the Invention

[0009] Hereinafter, an electronic device 1 according to an embodiment of the present invention will be described with reference to the drawings.

[0010] First, referring to FIGS. 1 and 2, an electronic device 1 according to an embodiment will be described. FIG. 1 is a cross-sectional view of an electronic device 1 according to an embodiment of the present invention. FIG. 2 is a cross-sectional view of the electronic device 1 shown in FIG. 1 disassembled. In FIG. 1, reference numerals of detailed components are omitted.

[0011] As shown in Figures 1 and 2, the electronic device 1 according to this embodiment comprises an electronic component layer 2, a connection layer 3, and a wiring layer 4 as an RDL (Re-distribution layer) (hereinafter referred to as "wiring layer 4"). The electronic device 1 is mounted on a substrate 5.

[0012] The electronic component layer 2 is formed by covering a plurality of electronic components 20, namely a first electronic component 20A, a second electronic component 20B, and a third electronic component 20C, with an insulating layer 21, which will be described later. The electronic component layer 2 processes data using the electronic components 20. Similarly, the electronic component layer 2 stores data and programs. The electronic component layer 2 executes programs. The electronic component layer 2 performs signal processing. The electronic component layer 2 communicates. The electronic component layer 2 interfaces with sensor devices.

[0013] In the following explanation, if it is not necessary to specify the first electronic component 20A, the second electronic component 20B, and the third electronic component 20C, they may be simply referred to as "electronic component 20".

[0014] The connection layer 3 is formed by covering one or more bridges 31 with an insulating layer 30, which will be described later. The connection layer 3 electrically connects the electronic component layer 2 and the wiring layer 4. The connection layer 3 is formed between the electronic component layer 2 and the wiring layer 4. The connection layer 3 may also function as a so-called interposer.

[0015] In this embodiment, the bridge 31 includes a first bridge 31A and a second bridge 31B. In the following description, when it is not necessary to specify the first bridge 31A and the second bridge 31B, they may be simply referred to as "bridge 31".

[0016] The wiring layer 4 transmits signals output from the electronic component layer 2. The wiring layer 4 physically supports the electronic component layer 2 and the connection layer 3. The wiring layer 4 supplies charge to the electronic component layer and / or the connection layer 3. The wiring layer 4 is positioned on the opposite side of the connection layer 3 from the electronic component layer 2.

[0017] The substrate 5 physically supports the electronic component layer 2, the connection layer 3, and the wiring layer 4. The substrate 5 functions as a wiring board. The substrate 5 is positioned on the opposite side of the wiring layer 4 from the electronic component layer 2 and the connection layer 3. The substrate 5 may be a glass epoxy substrate, or it may be a glass substrate with an insulating layer and a wiring layer provided on it.

[0018] <Electronic component layer> As shown in Figures 1 and 2, the electronic component layer 2 has a plurality of electronic components 20 and an insulating layer 21. In this embodiment, the plurality of electronic components 20 include a first electronic component 20A, a second electronic component 20B, and a third electronic component 20C.

[0019] Electronic component 20 processes data. Electronic component 20 stores data and programs. Electronic component 20 executes programs. Electronic component 20 performs signal processing. Electronic component 20 communicates. Electronic component 20 interfaces with sensor devices. Each electronic component 20 may perform a different function. Electronic component 20 is, for example, a logic IC. Electronic component 20 may be, for example, a SoC (System on a chip). Electronic component 20 may include a memory IC. Electronic components may be, for example, DDR (Double Data Rate), LPDDR (Low-Power Double Data Rate), or HBM (High Bandwidth Memory).

[0020] Multiple electronic components 20 may be arranged side by side so that they are adjacent to each other. That is, the electronic component layer 2 may have a first electronic component 20A, a second electronic component 20B, and a third electronic component 20C arranged side by side. Note that the number of electronic components 20 is not limited to three. There may be two, three or more, or four or more electronic components.

[0021] More specifically, the first electronic component 20A and the second electronic component 20B may be arranged adjacent to each other. The second electronic component 20B and the third electronic component 20C may also be arranged adjacent to each other. The following description of adjacent first electronic component 20A and second electronic component 20B can be applied to other adjacent nth and (n+1)th electronic components unless otherwise specified. Here, n is a natural number.

[0022] By having multiple electronic components 20, the electronic device 1 can process more information and perform more functions compared to a device with only one electronic component 20. For example, if there are three or more electronic components 20, it can process even more information and perform even more functions.

[0023] An integrated circuit (IC) is formed on the electronic component 20. A specific example of multiple electronic components 20 is an IC chip (semiconductor chip). Semiconductor elements are arranged at high density on an IC chip. An IC chip, as an example, includes a chip substrate (not shown), transistors, chip wiring, and a chip insulating layer.

[0024] A chip substrate is the substrate on which an IC chip is mounted. Transistors function as electronic switches, controlling current in response to changes in voltage. An example of a transistor is a MOSFET (Metal-Oxide-Semiconductor Field-effect Transistor). Chip wiring is an electronic path for transmitting signals between transistors and other components. Chip wiring is formed by creating fine patterns using conductive metals (such as aluminum or copper) as an example. The chip insulating layer prevents short circuits between the chip substrate, transistors, and chip wiring.

[0025] The insulating layer 21 seals the electronic component 20, including the transistor. The insulating layer 21 is, for example, an organic insulating layer such as epoxy resin. The organic insulating layer may contain inorganic particles such as silica or alumina. The inclusion of inorganic particles makes it possible to control the coefficient of linear expansion and the modulus of elasticity. The insulating layer 21 may also be a mold resin. For example, the insulating layer 21 can be formed by transfer molding, in which pelletized material is heated and softened in a plunger, the resin is pressed into a mold, and then cooled and solidified to form the product. Alternatively, it can be formed by compression molding, in which liquid or granular mold resin is supplied in advance into an open mold, the mold is closed, and then heated and pressurized for molding. The insulating layer 21 may also be formed by laminating a build-up resin film and heat curing it.

[0026] The electronic component 20 has a first opposing portion 200 and an electronic component-side electrode 201. A bump electrode 202 and a bump electrode 203 are formed on the electronic component-side electrode 201.

[0027] The first opposing portion 200 faces the bridge 31. Specifically, the first opposing portion 200 faces the bridge 31 via the insulating layer 21 of the electronic component layer 2. The first opposing portion 200 may be a surface facing the bridge 31. Specifically, the first opposing portion 200 may be a surface facing the bridge 31 via the insulating layer 21 of the electronic component layer 2. The first opposing portion 200 may be the lower surface of the electronic component 20 when the electronic device 1 shown in Figure 1 is placed on a horizontal surface.

[0028] The electronic component-side electrode 201 is an input / output terminal for current and signals input and output to the electronic component 20. The electronic component-side electrode 201 is formed on the first opposing portion 200. The electronic component-side electrode 201 is formed, for example, from copper, copper-aluminum alloy, tin, tin-silver alloy, tin-copper-silver alloy, or a laminate or mixture thereof. The electronic component-side electrode 201 is electrically connected to the pillar 32 of the connection layer 3, which will be described later, via the bump electrode 202. The electronic component-side electrode 201 is electrically connected to the bridge 31 of the connection layer 3, which will be described later, via the bump electrode 203.

[0029] Bump electrodes 202 and 203 are formed on the electronic component side electrode 201. Bump electrodes 202 and 203 are formed by solder, for example. Bump electrodes 202 and 203 may be formed from copper, silver, gold, tin, or alloys thereof. Other bump electrodes described in this embodiment may be formed from similar materials.

[0030] The connecting layer 3 includes an insulating layer 30, a bridge 31, and a pillar 32 as a through-electrode for the connecting layer.

[0031] The insulating layer 30 seals the area around the bridge 31. The insulating layer 30 is, for example, an organic insulating layer such as epoxy resin. The organic insulating layer may contain inorganic particles such as silica or alumina. The inclusion of inorganic particles makes it possible to control the coefficient of linear expansion and the modulus of elasticity. The insulating layer 30 may also be a mold resin. For example, the insulating layer 30 can be formed by a transfer mold, in which pelletized material is heated and softened in a plunger, the resin is pressed into a mold, and then cooled and solidified to form the product. Alternatively, it can be formed by a compression mold, in which liquid or granular mold resin is supplied in advance into an open mold, the mold is closed, and then heated and pressurized for molding. The insulating layer 30 may also be formed by laminating a build-up resin film and heat curing it.

[0032] The bridge 31 is electrically connected to the electronic component 20. There may be two or more bridges 31. In this embodiment, the plurality of bridges 31 include a first bridge 31A and a second bridge 31B. There may be three or more bridges.

[0033] According to this embodiment, the electronic device 1 can process more information than when there is only one bridge 31.

[0034] Bridge 31 electrically connects multiple adjacent electronic components 20 to each other. Specifically, the first bridge 31A (n-th bridge) electrically connects adjacent first electronic component 20A (n-th electronic component) and second electronic component 20B ((n+1) electronic component) to each other. Furthermore, the second bridge 31B ((n+1) bridge) may electrically connect adjacent second electronic component 20B ((n+1) electronic component) and third electronic component 20C ((n+2) electronic component) to each other.

[0035] The pillar 32 penetrates the connection layer 3 from the opposing portion 33 facing the electronic component layer 2 to the opposing portion 34 facing the wiring layer 4, and electrically connects the electronic component 20 to the wiring of the wiring layer 4. The pillar 32 is formed in the insulating layer 30.

[0036] The pillar 32 directly electrically connects the electronic component layer 2 and the wiring layer 4. The pillar 32 is formed by erecting the insulating layer 30, penetrating from the surface facing the electronic component layer 2 (facing portion 33) to the surface facing the wiring layer 4 (facing portion 34). The pillar 32 is formed in a cylindrical shape, creating a cavity. A conductor is formed on the inner circumferential surface of the cavity. The cavity may also be filled with a conductor. An example of a conductor is copper formed by a plating method.

[0037] The pillar 32 has an exposed portion that is exposed on the opposing portion 34 on the wiring layer 4 side. When the connection layer 3 and the wiring layer 4 are joined, the exposed portion of the pillar 32 on the wiring layer 4 side is electrically connected to the third layer line wiring 46 formed on the fourth opposing portion 40 of the wiring layer 4, which will be described later.

[0038] The pillar 32 has an exposed portion that is exposed on the opposing portion 33 on the electronic component layer 2 side. The exposed portion of the pillar 32 on the electronic component layer 2 side may be covered by a pillar electrode 320. The pillar electrode 320 is, for example, a conductive thin film. The pillar electrode 320 is formed of copper as an example. Alternatively, the exposed portion of the pillar 32 on the electronic component layer 2 side may be used as the pillar electrode 320 without providing a conductive thin film. In the manufacturing process of the electronic device 1, when the electronic component layer 2 is joined to the connection layer 3, the pillar electrode 320 of the connection layer 3 is electrically connected to the bump electrode 202 of the electronic component layer 2. The pillar 32 is used, for example, as a power line or ground line for the electronic component 20.

[0039] The bridge 31 includes a glass substrate 310, bridge wiring 311 and a bridge insulating layer 312 that constitute the bridge wiring section, a second opposing portion 313, a third opposing portion 314, and bridge through vias 315 as bridge through electrodes. The bridge 31 further includes a bridge-side first electrode 316 and a bridge-side second electrode 317.

[0040] The bridge 31 is formed from a glass substrate 310. From the viewpoint of electrical reliability, it is preferable to use alkali-free glass or quartz glass for the glass substrate 310, as it does not contain alkaline components. Furthermore, it is also preferable to select a glass substrate 310 with an appropriate coefficient of thermal expansion and modulus of elasticity from the viewpoint of reliability, in relation to the physical properties of the electronic component layer 2, connection layer 3, wiring layer 4, and substrate 5.

[0041] The relative permittivity of silicon is, for example, 12. The relative permittivity of alkali-free glass is, for example, 5.8. The relative permittivity of quartz glass is, for example, 3.9. Dielectric loss is proportional to the relative permittivity. Therefore, the larger the relative permittivity, the greater the dielectric loss. Consequently, the dielectric loss of the bridge 31 that electrically connects multiple electronic components 20 can be reduced when it is formed from a glass substrate 310 compared to when it is formed from silicon.

[0042] Dielectric loss can have various effects on information transmission between multiple electronic components 20, such as signal attenuation, bandwidth limitation, increased delay, and signal distortion.

[0043] Dielectric loss absorbs and attenuates signal energy. As a result, the signal weakens as it travels through the wiring, degrading signal quality. Signal attenuation is a limiting factor in information transmission distance.

[0044] In wiring with high dielectric loss, the frequency components of a signal attenuate more quickly. This can limit bandwidth. High-frequency signals are more susceptible to degradation within the transmission line in wiring with high dielectric loss, which can affect high-speed data communication.

[0045] In wiring with high dielectric loss, the signal transmission speed can be slower. This is because it takes time for the signal to replenish the energy absorbed within the wiring. Larger signal delays reduce the reliability of communication.

[0046] Dielectric loss can cause signal distortion during transmission. High dielectric loss affects the amplitude, phase, and waveform of the signal, impairing its accuracy.

[0047] The bridge wiring 311 electrically connects multiple electronic devices 1 to each other. The bridge wiring 311 is, for example, copper wiring.

[0048] According to this embodiment, power and information can be exchanged directly between multiple electronic components 20 arranged on the electronic component layer 2 via the bridge wiring 311.

[0049] The bridge insulation layer 312 insulates the bridge wiring 311.

[0050] The presence of the bridge insulating layer 312 can suppress the occurrence of short circuits between multiple bridge wirings 311 and between the bridge wirings 311 and the bridge through vias 315.

[0051] The bridge insulating layer 312 seals the bridge wiring 311. The bridge insulating layer 312 is formed on the electronic component layer 2 side of the glass substrate 310, that is, in the vicinity of the second opposing portion 313.

[0052] In this embodiment, multiple bridge insulating layers 312 are stacked so as to sandwich the bridge wiring 311. Alternatively, the bridge wiring section may be formed as a multilayer wiring structure having multiple layers of bridge wiring 311. In the multilayer wiring structure, there are multiple layers of bridge insulating layers 312 and multiple layers of bridge wiring 311, with the bridge insulating layers 312 and bridge wiring 311 stacked alternately. This allows signal transmission between multiple electronic components 20 using a large number of wires. Therefore, the density of electronic components 20 and wiring can be improved. The bridge wiring 311 may be directly placed on the glass substrate 310. Furthermore, the bridge wiring 311 may be placed on the outermost surface of the bridge 31.

[0053] Furthermore, the bridge wiring portion, consisting of the bridge insulating layer 312 and the bridge wiring 311, may also be formed on the wiring layer 4 side of the glass substrate 310, i.e., near the third opposing portion 314. In this case, vias are formed in the bridge 31, and the bridge-side first electrode 316 formed on the second opposing portion 313 of the bridge 31 is electrically connected to the bridge wiring 311 formed near the third opposing portion 314. This also improves the density of electronic components 20 and wiring.

[0054] The bridge insulating layer 312 may be an organic insulating layer. For example, the bridge insulating layer 312 may be a resin material such as polyimide resin as a photosensitive resin material. Organic insulating layers formed from resin materials generally have a low relative permittivity. Therefore, by using an organic insulating layer as the bridge insulating layer 312, dielectric loss can be further suppressed. Also, by using an organic insulating layer, it is possible to increase the thickness of the bridge insulating layer 312 in conjunction with increasing the thickness of the bridge wiring 311, and even in this case, manufacturing costs can be reduced. Increasing the thickness of the bridge wiring 311 is effective in lowering the conductor resistance of the wiring. The organic insulating layer is formed, for example, by spin coating. The relative permittivity of the organic insulating layer may be lower than that of silicon. The relative permittivity of the organic insulating layer may be lower than that of the glass material constituting the glass substrate 310. The relative permittivity of the organic insulating layer is preferably 10 or less, and more preferably 5 or less.

[0055] The bridge insulating layer 312 may be an inorganic insulating layer. For example, the bridge insulating layer 312 may be silicon dioxide (SiO2). Inorganic insulating layers such as silicon dioxide are formed by, for example, chemical vapor deposition (CVD).

[0056] The second opposing portion 313 of the bridge 31 faces the first opposing portion 200 of each of the multiple electronic components 20. That is, the second opposing portion 313 faces the first opposing portion 200 of the first electronic component 20A, the second electronic component 20B, and the third electronic component 20C. The second opposing portion 313 may also be the upper surface of the bridge 31 when the electronic device 1 shown in Figure 1 is placed on a horizontal surface.

[0057] The first opposing portion 200 and the second opposing portion 313 are electrically connected. Specifically, the first opposing portion 200 of the first electronic component 20A is electrically connected to the bridge-side first electrode 316 formed on the second opposing portion 313 of the bridge 31 via the bump electrode 203. The first opposing portion 200 of the second electronic component 20B is electrically connected to the bridge-side first electrode 316 formed on the second opposing portion 313 of the bridge 31 via the bump electrode 203. Furthermore, the first opposing portion 200 of the first electronic component 20A is electrically connected to the pillar electrode 320 formed on the opposing portion 33 on the electronic component layer 2 side of the connection layer 3 via the bump electrode 202.

[0058] The third opposing portion 314 of the bridge 31 is formed on the side opposite to the second opposing portion 313 of the bridge 31. The third opposing portion 314 faces the wiring layer 4. Specifically, the third opposing portion 314 faces the wiring layer 4 via the insulating layer 30. The third opposing portion 314 may also be the lower surface of the bridge 31 when the electronic device 1 shown in Figure 1 is placed on a horizontal surface.

[0059] To elaborate further, when the electronic device 1 according to this embodiment is placed on a horizontal surface, the bridge wiring 311 is formed extending horizontally inside the bridge insulating layer 312, and further extends until it bends towards the electronic component 20 side of the electronic component layer 2 at both ends in the horizontal direction and is exposed on the second opposing portion 313. Here, the horizontal direction is the direction parallel to the surface of the second opposing portion 313.

[0060] In other words, when the electronic device 1 according to this embodiment is placed on a horizontal surface, the bridge wiring 311 is formed extending from the lower vertical part of the first electronic component 20A to the lower vertical part of the second electronic component 20B within the interior of the bridge insulating layer 312. The bridge wiring 311 is bent at the end on the first electronic component 20A side and extends until it is exposed at the second opposing part 313. The bridge wiring 311 is bent at the end on the second electronic component 20B side and extends until it is exposed at the second opposing part 313.

[0061] The current and information output from the first electronic component 20A are transmitted from the bump electrode 203 of the electronic component side electrode 201 to the bridge wiring 311 via the bridge electrode 3160 of the bridge side first electrode 316 formed on the first electronic component 20A side of the bridge 31. The second electronic component 20B receives the current and information transmitted to the bridge wiring 311 from the bridge electrode 3160 of the bridge side first electrode 316 formed on the second electronic component 20B side of the bridge 31 via the bump electrode 203 of the electronic component side electrode 201 of the second electronic component 20B.

[0062] Similarly, the current and information output from the second electronic component 20B are transmitted from the bump electrode 203 of the electronic component side electrode 201 to the bridge wiring 311 via the bridge electrode 3160 of the bridge side first electrode 316 formed on the second electronic component 20B side of the bridge 31. The first electronic component 20A receives the current and information transmitted to the bridge wiring 311 from the bridge electrode 3160 of the bridge side first electrode 316 formed on the first electronic component 20A side of the bridge 31 via the bump electrode 203 of the electronic component side electrode 201 of the first electronic component 20A.

[0063] The bridge via 315 directly electrically connects the electronic component layer 2 and the wiring layer 4. The bridge via 315 is formed to penetrate from a second opposing portion 313 facing the electronic component layer 2 to a third opposing portion 314 facing the wiring layer 4. The bridge via 315 is formed in a cylindrical shape, creating a cavity. The inner circumferential surface of the cavity is formed with a conductor. The cavity may be filled with a conductor. An example of a conductor is copper formed by a plating method.

[0064] The bridge through via 315 is preferably a straight via electrode that penetrates from the second opposing portion 313 to the third opposing portion 314. That is, the bridge through via 315 is preferably a straight via electrode that penetrates linearly through the glass substrate 310 and the bridge insulating layer 312. This makes it possible to shorten the wiring length when electrically connecting the electronic component 20 and the wiring layer 4 via the bridge 31. This configuration is particularly effective when HBM is used as the electronic component 20. HBM has signal line contacts arranged in close proximity, and power line contacts and ground line contacts are also located near these areas. Even in such cases, the bridge wiring 311 can be used as a signal line to electrically connect multiple electronic components 20 to each other with a short wiring length, while the bridge through via 315 can be used as a power line or ground line to electrically connect the electronic component 20 to the wiring layer 4 with a short wiring length.

[0065] A bridge-side first electrode 316 is formed on the second opposing portion 313. That is, the bridge-side first electrode 316 is formed on the second opposing portion 313 of the bridge 31. The bridge-side first electrode 316 is electrically connected to the bump electrode 203 of the electronic component 20 of the electronic component layer 2.

[0066] The first electrode 316 on the bridge side includes a bridge electrode 3160 and a via electrode 3161.

[0067] The bridge electrode 3160 is composed of a conductive thin film that electrically covers the exposed surface of the bridge wiring 311, which extends from the bridge wiring 311 sealed in the bridge insulating layer 312 towards the electronic component 20 and is exposed on the second opposing portion 313. The bridge electrode 3160 is formed of copper as an example. Alternatively, the exposed portion of the bridge wiring 311 on the second opposing portion 313 side may be used as the bridge electrode 3160 without providing a conductive thin film.

[0068] The via electrode 3161 is, for example, made of a conductive thin film that covers the exposed surface extending from the bridge through via 315 towards the electronic component 20 and exposed on the third opposing portion 314. The via electrode 3161 is made of copper as an example. Alternatively, the exposed portion on the second opposing portion 313 side of the bridge wiring 311 may be used as the via electrode 3161 without providing a conductive thin film.

[0069] A bridge-side second electrode 317 is formed on the third opposing portion 314. That is, the bridge-side second electrode 317 is formed on the third opposing portion 314 of the bridge 31. The bridge-side second electrode 317 is electrically connected to the third layer line wiring 46 of the wiring layer 4.

[0070] The second electrode 317 on the bridge side includes a via electrode 3170 and a bump electrode 3171.

[0071] The via electrode 3170 is, for example, made of a conductive thin film that covers the exposed surface of the bridge through via 315 extending toward the wiring layer 4 and exposed on the third opposing portion 314. The via electrode 3170 is made of copper as an example. Alternatively, the exposed portion of the bridge wiring 311 on the third opposing portion 314 side may be used as the via electrode 3170 without providing a conductive thin film.

[0072] A bump electrode 3171 is formed on the via electrode 3170.

[0073] <Wiring layer> The wiring layer 4 includes a fourth opposing portion 40, a fifth opposing portion 41, a first layer line wiring 42, a first insulating layer 43, a second layer line wiring 44, a second insulating layer 45, a third layer line wiring 46, a first layer via wiring 47, a second layer via wiring 48, and a bump electrode 49.

[0074] The fourth opposing portion 40 faces the third opposing portion 314 of the bridge 31. Specifically, the fourth opposing portion 40 faces the bridge 31 via the insulating layer 30 of the connection layer 3. The fourth opposing portion 40 may be the surface facing the bridge 31. The fourth opposing portion 40 may be the surface facing the bridge 31 via the insulating layer 30 of the connection layer 3. The fourth opposing portion 40 may be the upper surface of the wiring layer 4 when the electronic device 1 shown in Figure 1 is placed on a horizontal surface.

[0075] The fourth opposing portion 40 of the wiring layer 4 and the third opposing portion 314 of the bridge 31 of the connection layer 3 are electrically connected. Specifically, the third layer line wiring 46 of the fourth opposing portion 40 of the wiring layer 4 is electrically connected to the via electrode 3170 formed on the bridge 31 of the connection layer 3. The via electrode 3170 of the second electrode 317 on the bridge side, formed on the first electronic component 20A side, is electrically connected to the third layer line wiring 46 of the wiring layer 4. The via electrode 3170 of the second electrode 317 on the bridge side, formed on the second electronic component 20B side, is electrically connected to the third layer line wiring 46 of the wiring layer 4. At this time, the bridge 31 is metal-bonded to the wiring layer 4 by flip-chip mounting. This allows the bridge 31 to be mounted with very high positioning accuracy.

[0076] The fifth opposing portion 41 is formed on the side of the wiring layer 4 opposite to the fourth opposing portion 40. The fifth opposing portion 41 faces the substrate 5. Specifically, the fifth opposing portion 41 faces the substrate 5 via bump electrodes 49 formed on the fifth opposing portion 41. The fifth opposing portion 41 may also be the lower surface of the wiring layer 4 when the electronic device 1 shown in Figure 1 is placed on a horizontal surface.

[0077] The first layer line wiring 42 is formed on the fifth opposing portion 41 of the wiring layer 4. The first layer line wiring 42 may be formed by copper wiring, for example.

[0078] The first insulating layer 43 insulates the first layer line wiring 42, the first layer via wiring 47, and the second layer line wiring 44. The first insulating layer 43 is formed on top of the first layer line wiring 42 when the electronic device 1 shown in Figure 1 is placed on a horizontal surface. The first insulating layer 43 can be formed from a resin such as polyimide, polybenzoxazole, or benzocyclobutene, as an example. If these resins have photosensitive properties, vias (openings) can be created by photolithography and filled with a conductive material such as metal to electrically connect the wiring layers formed above and below the resin material. If the resin material is not photosensitive, via openings can be created by laser irradiation or dry etching.

[0079] The second layer line wiring 44 is laminated on the first insulating layer 43 on the side opposite to the first layer line wiring 42. The second layer line wiring 44 is formed in the electronic device 1 according to this embodiment to improve the density of electronic components 20 and wiring when multiple electronic components 20 are mounted. The second layer line wiring 44 is laminated on top of the first insulating layer 43 when the electronic device 1 shown in Figure 1 is placed on a horizontal surface. The second layer line wiring 44 can be formed with the same composition as the first layer line wiring 42.

[0080] The second insulating layer 45 insulates the second layer line wiring 44, the second layer via wiring 48, and the third layer line wiring 46. The second insulating layer 45 is laminated on top of the second layer line wiring 44 when the electronic device 1 shown in Figure 1 is placed on a horizontal surface. The second insulating layer 45 can be formed with the same composition as the first insulating layer 43.

[0081] The third layer line wiring 46 is formed on the fourth opposing portion 40 of the wiring layer 4. When the connection layer 3 and the wiring layer 4 are joined, the third layer line wiring 46 is electrically connected to the exposed portion of the pillar 32 formed on the connection layer 3 on the wiring layer 4 side. When the connection layer 3 and the wiring layer 4 are joined, the third layer line wiring 46 is electrically connected to the bridge-side second electrode 317 of the bridge 31. The third layer line wiring 46 is laminated on top of the second insulating layer 45 when the electronic device 1 shown in Figure 1 is placed on a horizontal surface. The third layer line wiring 46 can be formed with the same composition as the first layer line wiring 42 and the second layer line wiring 44.

[0082] The first layer via wiring 47 electrically connects the first layer line wiring 42 and the second layer line wiring 44. When the electronic device 1 shown in Figure 1 is placed on a horizontal surface, the first layer via wiring 47 is formed extending vertically from the first layer line wiring 42 to the second layer line wiring 44.

[0083] The second layer via wiring 48 electrically connects the second layer line wiring 44 and the third layer line wiring 46. When the electronic device 1 shown in Figure 1 is placed on a horizontal surface, the second layer via wiring 48 is formed extending vertically from the second layer line wiring 44 to the third layer line wiring 46.

[0084] The bump electrode 49 electrically connects the wiring layer 4 and the substrate 5. When the wiring layer 4 and the substrate 5 are coupled, the bump electrode 49 electrically connects the first layer line wiring 42 of the wiring layer 4 and wiring (not shown) of the substrate 5. The bump electrode 49 is formed on the fifth opposing portion 41.

[0085] <Superposition of electronic components and bridges> Next, with reference to Figures 1 and 2, as well as Figure 3, the electronic device 1 according to this embodiment will be described further. Figure 3 is an external view of the electronic device 1 according to this embodiment, viewed from above.

[0086] Figure 3 shows the first electronic component 20A, the second electronic component 20B, the third electronic component 20C, the first bridge 31A, and the second bridge 31B, which are included in the electronic device 1 according to this embodiment.

[0087] As shown in Figure 3, when the electronic device 1 according to this embodiment is placed on a horizontal surface and the electronic component layer 2 and the connection layer 3 are viewed in the stacking direction, the bridge 31 is arranged to overlap each of the multiple electronic components 20.

[0088] According to this embodiment, the electronic components 20 can be densely arranged in the electronic component layer 2. Therefore, the amount of information that the electronic components 20 can process can be increased in an electronic device 1 of a specified size.

[0089] In other words, when the electronic device 1 according to this embodiment is placed on a horizontal surface and viewed from above in the vertical direction, a part of the first electronic component 20A and a part of the first bridge 31A overlap. Similarly, a part of the second electronic component 20B and a part of the first bridge 31A overlap. Similarly, a part of the second electronic component 20B and a part of the second bridge 31B overlap. Similarly, a part of the third electronic component 20C and a part of the second bridge 31B overlap.

[0090] More specifically, as shown in Figure 2, when the electronic device 1 according to this embodiment is placed on a horizontal surface and viewed from above in the vertical direction, the component-side electrode 201 of the first electronic component 20A and the bridge-side first electrode 316 of the first bridge 31A overlap. Similarly, the component-side electrode 201 of the second electronic component 20B and the bridge-side first electrode 316 of the first bridge 31A overlap. Similarly, the component-side electrode 201 of the second electronic component 20B and the bridge-side first electrode 316 of the second bridge overlap. Similarly, the component-side electrode 201 of the third electronic component 20C and the bridge-side first electrode 316 of the second bridge 31B overlap. The same applies hereafter.

[0091] With this configuration, when the electronic component layer 2 and the connecting layer 3 are joined together as shown in Figure 1, the bump electrode 203 of the electronic component side electrode 201 of the first electronic component 20A and the bridge electrode 3160 and via electrode 3161 of the bridge side first electrode 316 of the first bridge 31A are electrically connected. Similarly, the bump electrode 203 of the electronic component side electrode 201 of the second electronic component 20B and the bridge electrode 3160 and via electrode 3161 of the bridge side first electrode 316 of the first bridge 31A are electrically connected.

[0092] The bridge 31 may be smaller than any of the multiple electronic components 20 connected to the bridge. Specifically, the first bridge 31A is smaller than the first electronic component 20A and smaller than the second electronic component 20B. For example, when the electronic device 1 according to this embodiment is placed on a horizontal surface and the electronic component layer 2 and the connection layer 3 are viewed in the stacking direction, the area of ​​the first bridge 31A is smaller than the area of ​​the first electronic component 20A and the area of ​​the second electronic component 20B. That is, the area of ​​the first bridge 31A when viewed from above is smaller than the area of ​​either the first electronic component 20A or the second electronic component 20B when viewed from above.

[0093] According to this embodiment, the proportion of bridges 31 using glass substrates 310 within the wiring layer 4 can be reduced, thereby suppressing cost increases.

[0094] <Bridge Manufacturing Process> Next, the manufacturing process of the electronic device 1 according to this embodiment will be described with reference to Figures 4A to 4H. Figures 4A to 4H show the manufacturing process of the bridge 31 of the electronic device 1 according to one embodiment.

[0095] Figure 4A shows the glass substrate preparation process for preparing the glass substrate 310. As shown in Figure 4A, first the glass substrate 310 is prepared. The glass substrate 310 is, for example, a glass wafer. In reality, after the process shown in Figure 4H is completed, it is cut into chip sizes for one bridge 31 by dicing to form chips, but for the sake of explanation, Figures 4A to 4H show and explain a glass substrate 310 of the size of one bridge 31.

[0096] Figure 4B shows the via-filling process, which involves filling the formed through-holes in the glass substrate 310 with vias to form a portion of the bridge through-via 315. As shown in Figure 4B, through-holes are formed so as to penetrate from the first main surface 310A to the second main surface 310B (the third opposing portion 314 of the bridge 31) of the glass substrate 310. The through-holes are formed, for example, by laser processing. It is also preferable to etch the surface of the through-holes with hydrofluoric acid after laser processing to make them smooth. After forming a seed layer in the through-holes by sputtering or electroless plating, a metal such as copper is formed on top of it by electroplating, and then a conductive treatment is performed to make it less resistive. The metal layer may be formed only on the inner wall surface of the through-holes, or the entire hole may be filled with metal. This forms via electrodes that are at least a portion of the bridge through-via 315.

[0097] Figure 4C shows the insulating film formation process for forming a bridge insulating layer 312 on the first main surface 310A of the glass substrate 310. As shown in Figure 4C, a bridge insulating layer 312 is formed on the first main surface 310A of the glass substrate 310. The bridge insulating layer 312 is formed, for example, by depositing an organic insulating layer by spin coating. As the organic insulating film layer material, polyimide, polybenzoxazole, benzocyclobutene, etc., can be used. Alternatively, it can be formed by depositing an inorganic insulating layer such as SiO2 by CVD, etc.

[0098] Figure 4D shows the bridge wiring formation process for forming bridge wiring 311 on the bridge insulating layer 312. As shown in Figure 4D, bridge wiring 311 is further formed on the bridge insulating layer 312 on the first main surface 310A side of the glass substrate 310. The bridge wiring 311 is formed by an additive method, for example. In the additive method, for example, a resist is formed on the bridge insulating layer 312, and then the bridge wiring 311 is formed by electroless plating (full additive method). For example, copper wiring is used as the bridge wiring 311.

[0099] Figure 4E shows the insulating film formation process for forming a bridge insulating layer 312 on a bridge wiring 311. As shown in Figure 4E, another bridge insulating layer 312 is formed on the bridge wiring 311 laminated on the bridge insulating layer 312, sealing the bridge wiring 311 with the bridge insulating layer 312. Alternatively, the process in Figure 4D and the process in Figure 4E may be repeated to form the bridge wiring section as a multilayer wiring structure having multiple layers of bridge wiring 311. In this case, the bridge wiring section has multiple layers of bridge insulating layer 312 and multiple layers of bridge wiring 311, with the bridge insulating layer 312 and bridge wiring 311 being alternately laminated. This allows signal transmission between multiple electronic components 20 using a large number of wires.

[0100] Figure 4F shows the via-filling process, which involves filling the openings in the bridge insulating layer 312 with vias to form bridge through-vias 315, following the opening formation process. If the resin material constituting the bridge insulating layer 312 has photosensitive properties, vias (openings) are created by photolithography and filled with a conductive material such as metal. The conductive material is connected to via electrodes (not shown) on the glass substrate 310 to form bridge through-vias 315. If the resin material is not photosensitive, via openings can also be created by laser irradiation or dry etching. As an example, after forming the vias (openings), a seed layer is first deposited on the inner surface of the vias by sputtering. For example, a titanium film is used as the seed layer. Subsequently, via filling is performed by electroplating to form bridge through-vias 315. The via electrodes for the bridge through-vias 315 are formed from, for example, copper. After this, the surface of the bridge 31 is polished by CMP to remove any excess metal formed during the via-filling process. The surface of the first main surface 310A, which has been polished by CMP, becomes the second opposing portion 313 of the bridge 31. The second main surface 310B of the glass substrate 310 becomes the third opposing portion 314 of the bridge 31.

[0101] Figure 4G shows the bridge wiring formation process. As shown in Figure 4G, additional bridge wiring 311 is formed so that the bridge wiring 311 is exposed from the second opposing portion 313. This additional wiring is formed, for example, by the damascene method or the semi-additive method. This forms a bridge wiring 311 that is bent at both horizontal ends, with its ends exposed to the second opposing portion 313.

[0102] Figure 4H shows the bump electrode formation process. As shown in Figure 4H, the bridge-side second electrode 317 is formed on the third opposing portion 314 side of the bridge through via 315. That is, a via electrode 3170 as a seed layer is formed on the exposed portion on the third opposing portion 314 side of the bridge through via 315, and then a bump electrode 3171 is formed on the via electrode 3170. Note that the formation of the seed layer may be omitted. After that, the bridge 31 with the bump electrode formed is completed by cutting to chip size by dicing.

[0103] <Lamination process for electronic devices> Next, the lamination process of the electronic device 1 according to one embodiment will be described with reference to Figures 5A to 5O. Figures 5A to 5O are diagrams showing the lamination process of the electronic device 1 according to one embodiment.

[0104] Figure 5A shows the release layer formation process, in which a release layer 102 is formed on the panel carrier 100 prepared in the panel carrier preparation process. As shown in Figure 5A, a release layer 102 is formed on the base panel carrier 100.

[0105] Figure 5B shows the wiring formation process for forming the first layer line wiring 42 in the release layer 102. As shown in Figure 5B, a copper layer is formed in the release layer 102 to form the first layer line wiring 42. The patterned first layer line wiring 42 is formed, for example, by the damascene method or the semi-additive method.

[0106] Figure 5C shows the wiring layer formation process for forming the wiring layer 4 on the release layer 102. As shown in Figure 5C, the wiring layer 4 is laminated on the release layer 102.

[0107] As an example, the wiring layer 4 is formed by stacking the first insulating layer 43, the second insulating layer 44, the second insulating layer 45, and the third insulating layer 46 on top of the first insulating layer 42. The first insulating layer via wiring 47 may be formed after the first insulating layer 43 is formed. The second insulating layer via wiring 48 may be formed after the second insulating layer 45 is formed.

[0108] Figure 5D shows the bridge mounting process for mounting the bridge 31 on the wiring layer 4. As shown in Figure 5D, the bridge 31 (first bridge 31A, second bridge 31B) manufactured by the process shown in Figures 4A to 4H is mounted on the wiring layer 4. At this time, the bridge 31 is metal-bonded to the wiring layer 4 by flip-chip mounting. More specifically, the bridge-side second electrode 317 of the bridge 31 is metal-bonded to the contact portion of the third layer line wiring 46 of the wiring layer 4. This allows the bridge 31 to be mounted with very high positioning accuracy.

[0109] Figure 5E shows a part of the pillar formation process, specifically the resist film formation process. As shown in Figure 5E, a thick resist film 104 is formed to cover the bridges 31 (first bridge 31A, second bridge 31B).

[0110] Figure 5F shows the pillar formation process, which involves filling holes in the resist film 104 with vias after the hole formation process. As shown in Figure 5F, holes are formed by etching predetermined locations in the resist film 104 (contact points in the third layer line wiring 46), and then the formed holes are filled with vias by electroplating to form the pillars 32. As an example, for via filling, a seed layer is first deposited on the inner surface of the hole by sputtering. For example, a titanium film is used as the seed layer. After that, via filling is performed by electroplating to form the pillars 32. The metal pillars as pillars 32 are formed from, for example, copper.

[0111] Figure 5G shows the resist film removal process for removing the resist film 104. As shown in Figure 5G, the resist film 104 is removed to expose the bridges 31 (first bridge 31A, second bridge 31B) and pillars 32.

[0112] Figure 5H shows the molding process in which the bridge 31 and pillar 32 are covered with an insulating layer 30. As shown in Figure 5H, the bridge 31 (first bridge 31A, second bridge 31B) and pillar 32 are molded with an insulating layer 30.

[0113] Figure 5I shows the grinding process for grinding the surface of the insulating layer 30. As shown in Figure 5I, the surface of the insulating layer 30 is ground with a grinder or the like to expose the second opposing portion 313 of the bridge 31. At this time, the pillar 32 is also ground to form an exposed portion of the pillar 32 on the opposing portion 33 side of the connecting layer 3 on the electronic component layer 2 side.

[0114] Figure 5J shows the electrode formation process for forming electrodes made of thin-film metal. As shown in Figure 5J, a bridge electrode 3160 made of thin-film metal is formed on the surface of the bridge wiring 311 exposed on the second opposing portion 313 of the bridge 31 (first bridge 31A, second bridge 31B), and a via electrode 3161 made of thin-film metal is formed on the surface of the bridge through via 315. Furthermore, a pillar electrode 320 made of thin-film metal is formed on the surface of the pillar 32. However, this process is not necessarily required, and the exposed surfaces of the bridge wiring 311, the bridge through via 315, and the pillar 32 may be used as electrodes as they are. This forms the connection layer 3.

[0115] Figure 5K shows the electronic component mounting process for mounting electronic components 20 on the connection layer 3. As shown in Figure 5K, the electronic components 20 (first electronic component 20A, second electronic component 20B, third electronic component 20C) are mounted on the connection layer 3 so as to overlap a portion of the bridge 31 (first bridge 31A, second bridge 31B). Specifically, the bump electrodes 203 and 202 of the electronic components 20 (first electronic component 20A, second electronic component 20B, third electronic component 20C) are joined to the bridge 31 (first bridge 31A, second bridge 31B) and the pillar 32. At this time, the electronic components 20 are metal-bonded to the connection layer 3 by flip-chip mounting. This makes it possible to mount the electronic components 20 with very high positioning accuracy.

[0116] Figure 5L shows the molding process in which the electronic component 20 is covered with an insulating layer 21. As shown in Figure 5L, the electronic component 20 (first electronic component 20A, second electronic component 20B, third electronic component 20C) is molded with an insulating layer 21.

[0117] Figure 5M shows a grinding process for grinding the surface of the insulating layer 21. As shown in Figure 5M, the insulating layer 21 is ground using a grinder or the like to expose the surfaces of the electronic components 20 (first electronic component 20A, second electronic component 20B, and third electronic component 20C). This process is not always necessary, but it is useful when a heat dissipation structure is to be formed directly on the electronic components 20 for heat dissipation.

[0118] Figure 5N shows the panel carrier removal process for removing the panel carrier 100. As shown in Figure 5N, the panel carrier 100 and the release layer 102 are removed.

[0119] Figure 5O shows the bump electrode formation process for forming bump electrodes 49 on the wiring layer 4. As shown in Figure 5O, bump electrodes 49 are formed on the first layer line wiring 42 of the wiring layer 4. This completes the electronic device 1. Subsequently, the electronic device 1 is mounted on the substrate 5 using the bump electrodes 49.

[0120] Next, Figures 6A to 6C show modified examples of this embodiment. Figure 6A is a top view (plan view) of the modified bridge 31. Figure 6B is a top view (plan view) of the wiring layer 4. Figure 6C is a diagram showing the alignment process in the bridge mounting process in which the bridge 31 is mounted on the wiring layer 4. Note that the third layer line wiring 46 is not shown in Figures 6B and 6C.

[0121] As shown in Figure 6A, the bridge 31 has a first alignment mark 50A as an alignment mark.

[0122] In this modified example, the first alignment mark 50A is located near the second opposing portion 313 (see Figure 4H). The first alignment mark 50A is located, for example, within the bridge insulation layer 312. Specifically, the first alignment mark 50A may be located in the same layer as the bridge wiring 311. The first alignment mark 50A may be made of the same material as the bridge wiring 311. This facilitates the process of forming the alignment mark. However, the first alignment mark 50A may be located in a different layer from the layer in which the bridge wiring 311 is located. The first alignment mark 50A may be made of a different material than the bridge wiring 311.

[0123] The first alignment mark 50A is located on the same layer as the bridge wiring 311, but spaced apart from the bridge wiring 311. By providing the first alignment mark 50A separately from the bridge wiring 311, more accurate alignment becomes possible. However, a portion of the bridge wiring 311 may also serve as the first alignment mark 50A.

[0124] The first alignment mark 50A has a shape corresponding to the second alignment mark 50B located on the wiring layer 4 described later. The first alignment mark 50A is, for example, a cross-shaped mark, but is not limited to this.

[0125] It is preferable that there are multiple first alignment marks 50A, and more preferably three or more. In this modified example, three first alignment marks 50A are provided.

[0126] The first alignment mark 50A may be placed on the surface of the second opposing portion 313 (see Figure 4H). The first alignment mark 50A may be placed on the bridge insulating layer 312. Alternatively, the first alignment mark 50A may be placed on the glass substrate 310 on the side of the second opposing portion 313.

[0127] The first alignment mark 50A may be located near the third opposing portion 314 (see Figure 4H). The first alignment mark 50A located near the third opposing portion 314 can be recognized by a camera via the glass substrate 310. The first alignment mark 50A may be located on the surface of the third opposing portion 314. Alternatively, the first alignment mark 50A may be located on the glass substrate 310 on the side of the third opposing portion 314. If a translucent insulating layer is located on the side of the third opposing portion 314, the first alignment mark 50A may be located on the translucent insulating layer. When the first alignment mark 50A is located near the third opposing portion 314, the distance to the second alignment mark 50B (described later) becomes shorter, thereby improving alignment accuracy.

[0128] As shown in Figure 6B, the wiring layer 4 has a second alignment mark 50B. The second alignment mark 50B is provided on the surface of the wiring layer 4. The second alignment mark 50B may be made of the same material as the third layer line wiring 46. This makes the process of forming the alignment mark easier. However, the second alignment mark 50B may be made of a different material than the third layer line wiring 46.

[0129] The second alignment mark 50B has a shape corresponding to the first alignment mark 50A. The second alignment mark 50B is, for example, a mark composed of four rectangles, but is not limited to this.

[0130] It is preferable that there are multiple second alignment marks 50B, and more preferably three or more. In this modified example, three second alignment marks 50B are provided. The number of second alignment marks 50B is the same as the number of first alignment marks 50A.

[0131] In this modified example, an alignment process using alignment marks is performed during the bridge mounting process shown in Figure 5D. Figure 6C is a diagram illustrating the alignment process when flip-chip mounting the bridge 31 on the wiring layer 4. Figure 6C is a top view of the wiring layer 4 and the bridge 31 placed on the wiring layer 4. Specifically, it is a plan view of Figure 5D, viewed from the top to the bottom of the paper.

[0132] At least a portion of the bridge 31 is made of a light-transmitting material from the second opposing portion 313 to the third opposing portion 314. The glass substrate 310 of the bridge 31 is a light-transmitting material. In this modified example, the bridge insulating layer 312 is made of a light-transmitting material. Specifically, the bridge insulating layer 312 is preferably a light-transmitting resin material or a light-transmitting inorganic material. The light-transmitting resin material is not particularly limited as long as it is light-transmitting, but epoxy, polyimide, polybenzoxazole, benzocyclobutene, etc., can be used. Particles may be dispersed in these resins as long as light transmittance is ensured. The material of the particles is not particularly limited, but silica, alumina, barium sulfate, talc, aluminum nitride, silicon nitride, silicon carbide, etc., can be used. The light-transmitting inorganic material is not particularly limited, but for example, silicon oxide, silicon nitride, silicon carbonitride, aluminum oxide, etc., can be used. In this modified example, the surface of the wiring layer 4 can be seen through the bridge 31, excluding the wiring portion such as the bridge wiring 311 provided on the bridge 31.

[0133] The second alignment mark 50B located on the wiring layer 4 can be viewed by a camera via the bridge 31. Furthermore, if the first alignment mark 50A is located near the third opposing portion 314, the first alignment mark 50A located near the third opposing portion 314 can also be viewed by a camera via the glass substrate 310 of the bridge 31.

[0134] As shown in Figure 6C, the first alignment mark 50A of the bridge 31 and the second alignment mark 50B of the wiring layer 4 are aligned, thereby precisely aligning the position and rotation direction of the bridge 31 on the wiring layer 4. After the first alignment mark 50A and the second alignment mark 50B are aligned, flip-chip mounting is performed. With this modified example, since flip-chip mounting by metal bonding is possible after precise alignment, the bridge 31 can be mounted with higher positional accuracy.

[0135] It is preferable that multiple first alignment marks 50A and second alignment marks 50B are provided to accurately align the position and rotation direction of the bridge 31 on the wiring layer 4. More preferably, there are three or more first alignment marks 50A and second alignment marks 50B. It is preferable that multiple first alignment marks 50A are arranged near the outer circumference of the bridge 31 in a plan view. If the shape of the bridge 31 is rectangular in a plan view, it is preferable that alignment marks be provided at two or more, preferably three or more, of the four corners of the rectangular shape.

[0136] As described above, it is preferable that a first alignment mark 50A is formed on the glass bridge 31 made of a glass substrate. The first alignment mark 50A may be formed on either the second opposing portion 313 side or the third opposing portion 314 side. If the first alignment mark 50A is formed on the third opposing portion 314 side, it is preferable that it is formed so that it can be recognized from the second opposing portion 313 side through the glass substrate 310. If the first alignment mark 50A can be observed from the second opposing portion 313 side, when aligning the glass bridge 31 when mounting it on the wiring layer 4, the first alignment mark 50A formed on the glass bridge 31 and the second alignment mark 50B formed on the wiring layer 4 can be recognized with a single camera from the second opposing portion 313 side of the glass bridge 31. Furthermore, it becomes possible to perform position recognition and position correction with the camera until the glass bridge 31 makes contact with the wiring layer 4, thereby improving the mounting accuracy of the glass bridge 31.

[0137] Even when the first alignment mark 50A is formed on the second opposing portion 313 side, if the first alignment mark 50A and the second alignment mark 50B can be observed simultaneously from the second opposing portion 313 side, when aligning the glass bridge 31 when mounting it onto the wiring layer 4, the first alignment mark 50A formed on the glass bridge 31 and the second alignment mark 50B formed on the wiring layer 4 can be recognized with a single camera from the second opposing portion 313 side of the glass bridge 31. Furthermore, it becomes possible to perform position recognition and position correction with the camera until the glass bridge 31 makes contact with the wiring layer 4, thereby improving the mounting accuracy of the glass bridge 31.

[0138] The electronic device of this embodiment includes the following configuration.

[0139] (1) The electronic device 1 of this embodiment comprises a bridge 31 that electrically connects a plurality of electronic components 20 and a wiring layer 4 having wiring, wherein the bridge 31 is metal-bonded to the wiring layer 4. This makes it possible to provide an electronic device 1 that can mount the bridge 31 on the wiring layer 4 with high positional accuracy.

[0140] (2) In the electronic device 1 of (1), a plurality of electronic components 20 are provided, each of the plurality of electronic components 20 having a first opposing portion 200 facing the bridge 31, the bridge 31 having a second opposing portion 313 facing the first opposing portion 200 of the plurality of electronic components 20, and a third opposing portion 314 formed on the opposite side of the second opposing portion 313, the bridge 31 having a bridge through electrode 315 that penetrates from the second opposing portion 313 to the third opposing portion 314, and the bridge through electrode 315 is metal-bonded to the wiring layer 4. This makes it possible to shorten the wiring length when electrically connecting the electronic components 20 to other layers via the bridge 31, and to mount the bridge 31 on the wiring layer 4 with high positional accuracy.

[0141] (3) In the electronic device 1 of (1) or (2), the bridge 31 further has bridge wiring 311 that electrically connects a plurality of electronic components 20 to each other. This allows power and information to be exchanged between the plurality of electronic components 20 directly via the bridge wiring 311.

[0142] In the electronic device 1 of (4)(3), the bridge 31 further has a bridge insulating layer 312 that insulates the bridge wiring 311. This makes it possible to suppress the occurrence of short circuits between multiple bridge wirings 311 and short circuits between the bridge wiring 311 and the bridge through via 315.

[0143] In the electronic device 1 of (5)(4), the bridge insulating layer 312 is an organic insulating layer. Organic insulating layers formed from resin materials generally have a low dielectric constant. Therefore, by using an organic insulating layer as the bridge insulating layer 312, dielectric loss can be further reduced. Furthermore, by using an organic insulating layer, the bridge insulating layer 312 can be made thicker in conjunction with the thickening of the bridge wiring 311, and even in this case, manufacturing costs can be reduced.

[0144] (6) In the electronic device 1 of (1) to (4), the electronic device 1 comprises an electronic component layer 2 having a plurality of electronic components 20, a wiring layer 4 having wiring, and a connection layer 3 having a bridge 31 that electrically connects the plurality of electronic components 20 and the wiring layer 4. The effects of the present disclosure can also be obtained in an electronic device 1 having such a configuration.

[0145] In the electronic device 1 of (7)(6), the bridge through electrode 315 electrically connects the multiple electronic components 20 to the wiring of the wiring layer 4. This makes it possible to shorten the wiring length when electrically connecting the electronic components 20 to other layers via the bridge 31.

[0146] In the electronic device 1 of (8)(6)~(7), the connection layer 3 has an insulating layer 30 that surrounds the bridge 31, and the insulating layer 30 has a connection layer through electrode 32 (pillar 32) that penetrates from the opposing portion facing the electronic component layer 2 (second opposing portion 313) to the opposing portion facing the wiring layer 4 (third opposing portion 314), and electrically connects the electronic component 20 and the wiring of the wiring layer 4. As a result, the electronic component 20 and the wiring of the wiring layer 4 can be electrically connected in parts other than the bridge 31.

[0147] In the electronic device 1 of (9)(6)~(8), the multiple electronic components 20 are arranged side by side so as to be adjacent to each other. This allows for a high-density arrangement of the multiple electronic components 20 and enables the connection of the multiple electronic components 20 with bridges 31.

[0148] In the electronic device 1 of (10)(6)~(9), when the electronic component layer 2 and the connection layer 3 are viewed in the stacking direction, the bridge 31 is arranged to overlap each of the multiple electronic components 20. This allows the electronic components 20 to be densely arranged in the electronic component layer 2. Therefore, in an electronic device 1 of specified dimensions, the amount of information that the electronic components 20 can process can be increased.

[0149] (11) In the electronic device 1 of (1) to (10), the plurality of electronic components 20 include at least a first electronic component 20A, a second electronic component 20B, and a third electronic component 20C, and there are a plurality of bridges 31, the plurality of bridges 31 including a first bridge 31A that electrically connects the first electronic component 20A and the second electronic component 20B to each other, and a second bridge 31B that electrically connects the second electronic component 20B and the third electronic component 20C to each other. Conventionally, bridges were fixed to the wiring layer with adhesive. In this case, the positioning accuracy of the bridge relative to the wiring layer was low. With this embodiment, since flip-chip mounting by metal bonding is possible, the bridges 31 can be mounted with high positional accuracy. In particular, when using a plurality of bridges 31 in an electronic device 1 that includes three or more electronic components 20, if the positioning accuracy of the plurality of bridges 31 is low, it is difficult to mount them properly. With this embodiment, since flip-chip mounting by metal bonding is possible, the plurality of bridges 31 can be mounted with high positional accuracy.

[0150] In the electronic device 1 of (12)(1) to (11), the bridge 31 is formed from a glass substrate. This makes it possible to provide an electronic device 1 in which dielectric loss is suppressed.

[0151] In the electronic device 1 of (13)(12), the bridge 31 has a second opposing portion 313 that faces the first opposing portion 200 of a plurality of electronic components 20, and a third opposing portion 314 formed on the opposite side of the second opposing portion 313. At least a part of the bridge 31 is made of a light-transmitting material from the second opposing portion 313 to the third opposing portion 314, and the bridge 31 has a first alignment mark 50A. This makes it possible to mount the bridge 31 after accurate alignment, and thus the bridge 31 can be mounted with higher positional accuracy.

[0152] (14) In the electronic device 1 of (1) to (13), the bridge 31 is smaller than any of the multiple electronic components 20. This reduces the amount of material used to make up the bridge 31, thereby reducing costs.

[0153] Although embodiments of the present invention have been described above, the present invention is not limited to the embodiments described above, and various modifications and variations are possible. For example, the components of each embodiment are interchangeable with each other. [Explanation of Symbols]

[0154] 1 Electronic equipment 2 Electronic component layers 20 Electronic Components 200 First opposing section 21 Insulating layer 3. Connectivity Layer 30 Insulating layer 31 Bridge 310 Glass substrate 311 Bridge Wiring 312 Bridge Insulation Layer 313 Second opposing section 314 Third Opposite Section 315 Bridge Through Via (Bridge Through Electrode) 32 Pillars (connecting layer through electrodes) 4 wiring layers 42. Layer 1 Line Wiring 43. First insulating layer 44. Second Layer Line Wiring 45 Second insulating layer 46. ​​Third Layer Line Wiring 47. Layer 1 via wiring 48. Second layer via wiring 49 Bump electrodes 5 circuit boards 50A First Alignment Mark (Alignment Mark) 50B Second alignment mark

Claims

1. Multiple electronic components, A first bridge that electrically connects multiple electronic components, A second bridge that electrically connects multiple electronic components, RDL with wiring, Equipped with, The first bridge and the second bridge are metal-bonded to the RDL. At least one of the aforementioned plurality of electronic components is electrically connected to the first bridge and also electrically connected to the second bridge. An electronic device in which multiple electronic components are covered with resin.

2. Each of the aforementioned plurality of electronic components has a first opposing portion that faces the first bridge and the second bridge, The first bridge and the second bridge each have a second opposing portion facing the first opposing portion of the plurality of electronic components, and a third opposing portion formed on the opposite side of the second opposing portion. The first bridge and the second bridge further have bridge-through electrodes that penetrate from the second opposing portion to the third opposing portion, The electronic device according to claim 1, wherein the bridge through electrode is metal-bonded to the RDL.

3. The electronic device according to claim 1 or claim 2, wherein the first bridge and the second bridge further have bridge wiring for electrically connecting a plurality of the electronic components to each other.

4. The electronic device according to claim 3, wherein the first bridge and the second bridge further have a bridge insulating layer that insulates the bridge wiring.

5. The electronic device according to claim 4, wherein the bridge insulating layer is an organic insulating layer.

6. The electronic component layer having the plurality of electronic components, The electronic device according to claim 2, further comprising a connection layer having the first bridge and the second bridge, and electrically connecting the plurality of electronic components and the RDL.

7. The electronic device according to claim 6, wherein the bridge through electrode electrically connects the plurality of electronic components to the wiring of the RDL.

8. The connecting layer has an insulating layer that covers the periphery of the first bridge and the second bridge. The electronic device according to claim 6, wherein the insulating layer has a connecting layer through electrode formed therein that penetrates from a portion facing the electronic component layer to a portion facing the RDL, and electrically connects the electronic component and the wiring of the RDL.

9. The electronic device according to claim 6 or claim 7, wherein the plurality of electronic components are arranged in a line adjacent to one another.

10. The electronic device according to claim 6 or 7, wherein when the electronic component layer and the connecting layer are viewed in the stacking direction, the first bridge and the second bridge are arranged to overlap with each of the plurality of electronic components.

11. The aforementioned plurality of electronic components include at least a first electronic component, a second electronic component, and a third electronic component. The electronic device according to claim 1 or claim 2, wherein the first bridge electrically connects the first electronic component and the second electronic component, and the second bridge electrically connects the second electronic component and the third electronic component.

12. The electronic device according to claim 1 or claim 2, wherein the first bridge and the second bridge are formed from a glass substrate.

13. The first bridge and the second bridge each have a second opposing portion facing the first opposing portion of the plurality of electronic components, and a third opposing portion formed on the opposite side of the second opposing portion. At least a portion of the first bridge and the second bridge is made of a light-transmitting member from the second opposing portion to the third opposing portion, The electronic device according to claim 12, wherein the first bridge and the second bridge have alignment marks.

14. The electronic device according to claim 1 or 2, wherein the first bridge and the second bridge are smaller than any of the plurality of electronic components.

15. A method for manufacturing an electronic device according to claim 1, The panel carrier preparation process involves preparing the panel carrier, A release layer formation step in which a release layer is formed on the panel carrier, RDL formation step of forming the RDL on the release layer, A bridge mounting step in which the first bridge and the second bridge and the RDL are metal-bonded by flip-chip mounting, An electronic component mounting step of electrically connecting the first bridge and the second bridge with at least one electronic component from the plurality of electronic components, The process of covering the aforementioned electronic component with resin, A method for manufacturing an electronic device, comprising a panel carrier removal step of removing the panel carrier.

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