Thin film shielding agent, thin film formation method using the same, semiconductor substrate and semiconductor device manufactured thereby

Abstract

The present invention relates to a thin film shielding agent, a thin film forming composition containing the same, a thin film forming method using the same, and a semiconductor substrate and a semiconductor device manufactured thereby. By applying the thin film shielding agent, the reaction rate can be improved and the thin film growth rate can be appropriately reduced, so that even when a thin film is formed on a substrate having a complex structure under high temperature conditions, step coverage and thin film thickness uniformity can be significantly improved to form a seamless thin film, and impurities can be reduced to improve film quality.

Claims

1. A thin film shielding agent used for depositing a metal oxide film or a nonmetal oxide film on a substrate, The thin film shielding agent is injected onto the substrate before the adsorption of the precursor compound and is used to deposit a metal oxide film or a nonmetal oxide film by shielding the adsorption of the precursor compound. It contains at least one element having an electronegativity between the electronegativity of the metal or nonmetal constituting the oxide film and the electronegativity of oxygen, and shields the deposition. The thin film shielding agent is characterized by being a compound having the structure represented by the following chemical formula 1. [Chemical formula 1] 【Chemistry 1】 (In the above chemical formula 1, R1 is H, OH, CH3, OCH3, OCH2CH3, OCH2CH2CH3, or an alkyl group having 1 to 5 carbon atoms, an alkene group having 1 to 5 carbon atoms, or an alkane group having 1 to 5 carbon atoms, and X is, 【Chemistry 2】 or 【Transformation 3】 (where m is an integer between 0 and 4.)

2. The thin film shielding agent according to claim 1, characterized in that the metal or nonmetal shields the surface of a thin film formed from one or more precursor compounds selected from the group consisting of Al, Si, Ti, V, Co, Ni, Cu, Zn, Ga, Ge, Se, Zr, Nb, Mo, Ru, Rh, In, Sn, Sb, Te, Hf, Ta, W, Re, Os, Ir, La, Ce, and Nd.

3. The thin film shielding agent according to claim 1, characterized in that the thin film shielding agent is a compound containing four or more elements having an electronegativity in the range of 2.1 to 3.

1.

4. The thin film shielding agent according to claim 1, characterized in that it is one or more compounds selected from the compounds represented by the following chemical formulas 1-1 to 1-9. [Chemical formulas 1-1 to 1-9] 【Chemistry 4】

5. The process includes the step of injecting one or more thin film shielding agents and precursor compounds selected from compounds having the structure represented by the following chemical formula 1 into a chamber to form a thin film deposition layer on a loaded substrate. The thin film shielding agent and the precursor compound are injected onto the substrate before the adsorption of the precursor compound, and are used for depositing a metal oxide film or a nonmetal oxide film by shielding the adsorption of the precursor compound. A method for forming a thin film, characterized by the features described above. [Chemical formula 1] 【Transformation 5】 (In the above chemical formula 1, R １ H, OH, CH ３ , OCH ３ , OCH ２ CH ３ , OCH ２ CH ２ CH ３ Alternatively, it may be an alkyl group having 1 to 5 carbon atoms, an alkene group having 1 to 5 carbon atoms, or an alkane group having 1 to 5 carbon atoms, where X is 【Transformation 6】 or 【Transformation 7】 (where m is an integer between 0 and 4.)

6. The thin film formation method according to claim 5, characterized in that the precursor compound and the thin film shielding agent are transported independently into the chamber by a VFC (vapor flow control) system, a DLI (direct liquid introduction) system, or an LDS (liquid delivery system) system, and the thin film is a silicon nitride film, a silicon oxide film, a titanium nitride film, a titanium oxide film, a tungsten nitride film, a molybdenum nitride film, a hafnium oxide film, a zirconium oxide film, a tungsten oxide film, or an aluminum oxide film.

7. A semiconductor substrate characterized by comprising a thin film manufactured by the thin film formation method described in claim 5.

8. The semiconductor substrate according to claim 7, characterized in that the thin film has a multilayer structure of two or three or more layers.

9. A semiconductor device comprising the semiconductor substrate described in claim 7.

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