Chip manufacturing method

The chip manufacturing method uses laser beam irradiation with aberrations to form ablation marks and modified regions within the wafer, enhancing productivity by reliably dividing film-coated wafers into individual chips.

JP7876353B2Active Publication Date: 2026-06-19DISCO CORP
View PDF 6 Cites 0 Cited by

Patent Information

Application Number
JP2022106350
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Filing Date
2022-06-30
Publication Date
2026-06-19
Estimated Expiration
2042-06-30

AI Technical Summary

Technical Problem

Existing methods for dividing film-coated wafers face challenges with increased film thickness leading to division defects and chipping, requiring improvements in productivity.

Method used

A chip manufacturing method involving laser beam irradiation along planned division lines to form ablation marks and modified regions inside the wafer, followed by an external force to split the wafer, utilizing laser beams transparent to the wafer and absorbent to the film, with aberrations to enhance division efficiency.

Benefits of technology

The method improves productivity by reliably dividing film-coated wafers into individual chips while minimizing meandering and chipping, reducing the need for pre-removal of films on division lines.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure 0007876353000001
    Figure 0007876353000001
  • Figure 0007876353000002
    Figure 0007876353000002
  • Figure 0007876353000003
    Figure 0007876353000003
Patent Text Reader

Abstract

To provide a chip manufacturing method capable of improving productivity while reliably dividing a wafer with a film.SOLUTION: A manufacturing method of a chip by dividing a wafer with a film formed on the back side along a planned dividing line includes a laser beam irradiation step 101 of irradiating a wafer with a laser beam along a dividing line set on the wafer to form an ablation mark on the film formed on the back surface and forming a modified region inside the wafer, and a dividing step 102 of applying external force to the wafer and dividing the wafer along the ablation mark formed in the laser beam irradiation step 101 after performing the laser beam irradiation step 101.SELECTED DRAWING: Figure 3
Need to check novelty before this filing date? Find Prior Art

Citation Information

Patent Citations

  • Processing method and processing apparatus of laminated substrate

    JP2014028388A

  • Processing method of single crystal substrate

    JP2016164924A

  • Cutting method and cutting device of metal film-equipped brittle material substrate

    JP2018170475A

  • Method for processing work-piece

    JP2019000857A

  • Method of cutting laminate including silicone layer

    JP2021089935A