A topcon cell preparation method based on poly stacking optimization

Abstract

The invention discloses a TOPCon cell preparation method based on poly-layer optimization, relating to the field of cell preparation, comprising: Sl, preparing a first tunneling oxide layer; S2, preparing a first amorphous silicon layer on the first tunneling oxide layer; S3, preparing a second tunneling oxide layer on the first amorphous silicon layer; S4, preparing a second amorphous silicon layer on the second tunneling oxide layer; S5, preparing a third amorphous silicon layer on the second amorphous silicon layer; S6, preparing a mask protection layer on the third amorphous silicon layer; S7, performing high-temperature annealing and removing the mask protection layer; S8, preparing a silicon nitride anti-reflection layer on the third amorphous silicon layer; S9, printing silver paste on the silicon nitride anti-reflection layer; by using this method to fabricate the TOPCon cell, the second tunneling oxide layer, the second amorphous silicon layer, and the third amorphous silicon layer do not require any removal process. Meanwhile, this method adopts a full tunneling and amorphous silicon approach, achieving 100% compatibility with production line equipment, requiring no additional equipment, reducing cost while also enabling efficiency improvement.