Display panel and manufacturing method therefor, and display apparatus

Abstract

A display panel comprises: a substrate; a pixel defining layer, disposed on the substrate and having first openings and second openings, wherein the first openings and the second openings are arranged at intervals; light-emitting devices, wherein at least a part of each light-emitting device is located in a corresponding first opening, and the light-emitting device comprises an anode, a light-emitting portion, and a cathode that are stacked in a direction moving away from the substrate; and auxiliary electrodes, located between the pixel defining layer and the substrate, wherein each auxiliary electrode overlaps a corresponding second opening in a direction perpendicular to the substrate, and an edge of the cathode of the light-emitting device extends into the second opening and is electrically connected to the auxiliary electrode.

Description

Display panel, preparation method thereof and display device

[0001] The present application claims priority to the Chinese patent application No. 202411171331.1, filed on August 23, 2024, the content of which is incorporated herein by reference in its entirety. TECHNICAL FIELD

[0002] The present disclosure relates to the technical field of display, and in particular, to a display panel, a preparation method thereof and a display device. BACKGROUND

[0003] Organic Light Emitting Diode (OLED) display technology is a technology that uses light-emitting materials to emit light under the drive of current to realize display. OLED display has the advantages of ultra-light, ultra-thin, high brightness, wide viewing angle, low voltage, low power consumption, fast response, high definition, shock resistance, bendable, low cost, simple process, less use of raw materials, high luminous efficiency, and wide temperature range. SUMMARY

[0004] In one aspect, a display panel is provided. The display panel includes a substrate, a pixel defining layer, a light-emitting device, and an auxiliary electrode. The pixel defining layer is disposed on the substrate and has a first opening and a second opening, the first opening and the second opening are disposed at intervals. At least part of the light-emitting device is located in the first opening; the light-emitting device includes an anode, a light-emitting part, and a cathode which are stacked in a direction away from the substrate. The auxiliary electrode is located between the pixel defining layer and the substrate; the auxiliary electrode overlaps the second opening in a direction perpendicular to the substrate, and an edge of the cathode of the light-emitting device extends into the second opening and is electrically connected to the auxiliary electrode.

[0005] In some embodiments, the display panel further includes: an isolation structure layer disposed on a side of the pixel defining layer away from the substrate, the isolation structure layer has a third opening, the first opening and the second opening are located in the range of the third opening.

[0006] In some embodiments, the material of the isolation structure layer includes an inorganic material.

[0007] In some embodiments, the isolation structure layer includes a first sub-isolation layer and a second sub-isolation layer which are stacked in a direction away from the substrate; the first sub-isolation layer has a first sub-opening, the second sub-isolation layer has a second sub-opening, the first sub-opening and the second sub-opening are through-connected to form at least part of the third opening; the orthographic projection of the second sub-opening on the substrate is located in the range of the orthographic projection of the first sub-opening on the substrate.

[0008] In some embodiments, the second sub-isolation layer comprises a first edge surrounding the second sub-opening, the first edge extends towards the center line of the first opening compared to the first sub-isolation layer; a projection of the first edge on the substrate covers a projection of the second opening on the substrate.

[0009] In some embodiments, a projection of the light emitting part of the light emitting device on the substrate is misaligned with a projection of the first edge on the substrate; a boundary of the projection of the light emitting part on the substrate is connected with a boundary of the projection of the first edge on the substrate; or, there is a gap between the boundary of the projection of the light emitting part on the substrate and the boundary of the projection of the first edge on the substrate.

[0010] In some embodiments, the first edge comprises a first part close to the light emitting device, and a second part close to the second opening; a width of the second part is greater than a width of the first part; the width is a dimension of the first edge in a direction from the center of the second sub-opening to a boundary.

[0011] In some embodiments, a material of the first sub-isolation layer comprises silicon nitride; a material of the second sub-isolation layer comprises silicon oxide.

[0012] In some embodiments, the isolation structure layer further comprises a third sub-isolation layer on a side of the first sub-isolation layer away from the second sub-isolation layer; the third sub-isolation layer has a third sub-opening, the first sub-opening, the second sub-opening and the third sub-opening are through-connected to form the third opening; a projection of the third sub-opening on the substrate is within a range of a projection of the first sub-opening on the substrate.

[0013] In some embodiments, the display panel further comprises: a packaging part arranged on a side of the light emitting device away from the substrate, the packaging part covers a cathode of the light emitting device and a sidewall of the third opening, and extends to a surface of the isolation structure layer away from the substrate.

[0014] In some embodiments, the pixel definition layer comprises a first sub-definition layer and the second sub-definition layer which are sequentially stacked in a direction away from the substrate; the first sub-definition layer has a fourth sub-opening, the second sub-definition layer has a fifth sub-opening, the fourth sub-opening and the fifth sub-opening are through-connected to form at least part of the second opening; a projection of the fifth sub-opening on the substrate is within a range of a projection of the fourth sub-opening on the substrate.

[0015] In some embodiments, the first sub-definition layer has a thickness greater than a thickness of the second sub-definition layer; the thickness is a dimension of the first sub-definition layer or the second sub-definition layer along a direction perpendicular to the substrate.

[0016] In some embodiments, a ratio of the thickness of the second sub-definition layer to the thickness of the first sub-definition layer ranges from 0.3 to 0.7.

[0017] In some embodiments, the display panel further comprises: a packaging portion disposed on a side of the light emitting device away from the substrate, the packaging portion covering the cathode of the light emitting device, part of the packaging portion being filled in the second opening, and the packaging portion extending to a surface of the pixel definition layer away from the substrate.

[0018] In some embodiments, in the second opening, a gap is formed between an edge of the cathode and a side of the first definition layer away from the first opening, and the packaging portion fills the gap and covers the side of the cathode.

[0019] In some embodiments, the material of the first sub-definition layer comprises silicon nitride, and the material of the second sub-definition layer comprises silicon oxide.

[0020] In some embodiments, the number of the light emitting devices is plural, the number of the packaging portions is plural, one packaging portion covers one light emitting device, and edges of the plurality of packaging portions are connected.

[0021] In some embodiments, the auxiliary electrode is the same as the anode material and is disposed in the same layer.

[0022] In another aspect, a preparation method of a display panel is provided. The preparation method comprises: forming an anode and an auxiliary electrode on a substrate; forming a pixel definition layer; the pixel definition layer has a first opening and a second opening, the first opening and the second opening are disposed at intervals; the anode overlaps the first opening in a direction perpendicular to the substrate; the auxiliary electrode overlaps the second opening in a direction perpendicular to the substrate; sequentially forming a light emitting portion and a cathode in the first opening; an edge of the cathode extends into the second opening and is electrically connected with the auxiliary electrode.

[0023] In some embodiments, before sequentially forming the light emitting part and the cathode in the first opening, further comprising: forming an isolation structure layer on the side of the pixel defining layer away from the substrate, the isolation structure layer having a third opening, the first opening and the second opening being within the range of the third opening; sequentially forming a sacrificial layer and a photoresist layer on the side of the isolation structure layer away from the substrate, the sacrificial layer and the photoresist layer having a through hole penetrating the third opening corresponding to the target color light emitting device, and the sacrificial layer and the photoresist layer covering the area corresponding to the non-target color light emitting device; the sequentially forming the light emitting part and the cathode in the first opening comprises: depositing the light emitting material required for the target color light emitting device, a part of the light emitting material being deposited in the plurality of first openings to form the light emitting part, and another part of the light emitting material being deposited on the surface of the photoresist layer away from the substrate; depositing the cathode material, a part of the cathode material being deposited in the first opening and extending into the second opening to connect with the auxiliary electrode to form the cathode, and another part of the cathode material being deposited on the side of the light emitting material on the photoresist layer away from the substrate; using a stripping process to remove the sacrificial layer, the photoresist layer, the light emitting material on the surface of the photoresist layer away from the substrate, and the cathode material; retaining the light emitting material in the first opening to form the light emitting part, and retaining the cathode material in the first opening and extending to the second opening to connect with the auxiliary electrode to form the cathode; between the depositing the cathode material and the using the stripping process to remove the stripping layer, the photoresist layer, the light emitting material on the surface of the photoresist layer away from the substrate, and the cathode material, further comprising: forming an encapsulation film on the side of the deposited cathode material away from the substrate; etching the encapsulation film to form an encapsulation part; the encapsulation part covering the cathode material in the first opening and the second opening, and the sidewall of the third opening, and extending to the surface of the isolation structure layer away from the substrate.

[0024] In some embodiments, the forming the pixel defining layer comprises: sequentially forming a first sub-defining thin film and a second sub-defining thin film on the substrate; etching the first sub-defining thin film and the second sub-defining thin film to form a first sub-defining layer and a second sub-defining layer; the first sub-defining layer has a fourth sub-opening, the second sub-defining layer has a fifth sub-opening, the fourth sub-opening and the fifth sub-opening are through to form at least part of the second opening; the orthogonal projection of the fifth sub-opening on the substrate is within the orthogonal projection of the fourth sub-opening on the substrate; before sequentially forming the light emitting part and the cathode in the first opening, further comprising: sequentially forming a sacrificial layer and a photoresist layer on the side of the pixel defining layer away from the substrate, the sacrificial layer and the photoresist layer have a through hole through the third opening corresponding to the target color light emitting device, and the sacrificial layer and the photoresist layer cover the area corresponding to the non-target color light emitting device; the sequentially forming the light emitting part and the cathode in the first opening comprises: depositing the light emitting material required by the target color light emitting device, part of the light emitting material is deposited in the plurality of first openings to form the light emitting part, and another part of the light emitting material is deposited on the surface of the photoresist layer away from the substrate; depositing a cathode material, part of the cathode material is deposited in the first opening and extends into the second opening to connect with the auxiliary electrode to form the cathode, and another part of the cathode material is deposited on the side of the light emitting material on the photoresist layer away from the substrate; using a stripping process to remove the sacrificial layer, the photoresist layer, the light emitting material on the surface of the photoresist layer away from the substrate, and the cathode material; the light emitting material in the first opening is retained to form the light emitting part, and the cathode material in the first opening and extending to the second opening to connect with the auxiliary electrode is retained to form the cathode; between the depositing the cathode material and the using the stripping process to remove the stripping layer, the photoresist layer, the light emitting material on the surface of the photoresist layer away from the substrate, and the cathode material, further comprising: forming an encapsulating thin film on the side of the deposited cathode material away from the substrate; etching the encapsulating thin film to form an encapsulating part; the encapsulating part covers the cathode material in the first opening and the second opening, and the sidewall of the second opening, and extends to the surface of the pixel defining layer away from the substrate.

[0025] In yet another aspect, a display device is provided. The display device includes the display panel as in any of the above embodiments. BRIEF DESCRIPTION OF DRAWINGS

[0026] In order to more clearly illustrate the technical solutions in the present disclosure, the drawings needed to be used in some embodiments of the present disclosure will be briefly introduced as follows. Obviously, the drawings in the following description are only some drawings of the embodiments of the present disclosure, and other drawings can also be obtained by those skilled in the art according to these drawings. In addition, the drawings in the following description can be regarded as schematic diagrams, and are not limited to the actual size, actual process, etc. of the products involved in the embodiments of the present disclosure.

[0027] FIG. 1 is a structural diagram of a display device according to some embodiments;

[0028] FIG. 2 is a structural diagram of a display panel according to some embodiments;

[0029] FIG. 3 is a structural diagram of another display panel according to some embodiments;

[0030] FIG. 4 is a structural diagram of yet another display panel according to some embodiments;

[0031] FIG. 5 is a flowchart of a preparation method of a display panel according to some embodiments;

[0032] FIGS. 6-15 are cross-sectional structural diagrams corresponding to each step in a manufacturing method of a display panel according to some embodiments. DETAILED DESCRIPTION

[0033] The technical solutions in some embodiments of the present disclosure will be described clearly and completely in combination with the drawings. Obviously, the described embodiments are only some of the embodiments of the present disclosure, but not all the embodiments. Based on the embodiments provided in the present disclosure, all other embodiments obtained by those skilled in the art belong to the scope of protection of the present disclosure.

[0034] Unless the context clearly requires otherwise, throughout the description and the claims, the term "comprise," and variations thereof (e.g., "comprises" and "comprising"), will be construed to be inclusive in a manner consistent with the term's plain meaning, namely, "including but not limited to." In describing the description, the terms "one embodiment," "some embodiments," "exemplary embodiments," "example," "specific example" or "some examples," and the like, mean that a particular feature, structure, material, or characteristic is included in at least one embodiment or example of the disclosure, but that it can not be included in other embodiments or examples. The illustrative appearance of the foregoing terms in various places in the description are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics can be combined in any suitable manner in one or more embodiments or examples.

[0035] Hereinafter, the terms "first", "second", etc. are used only for the purpose of description, and should not be construed as indicating or implying relative importance or implying that the indicated technical features are limited in number. Therefore, the features defined with "first", "second" can explicitly or implicitly include one or more of the features. In the description of the embodiments of the disclosure, the meaning of "a plurality of" is two or more, unless otherwise specified.

[0036] In describing some embodiments, "coupled" and "connected," and variations thereof, can be used. The term "connected" should be interpreted broadly, for example, "connected" can be fixedly connected, or detachably connected, or integrated; can be directly connected, or indirectly connected through an intermediate medium. The term "coupled" indicates, for example, that two or more components have direct physical contact or electrical contact. The term "coupled" or "communicatively coupled" can also mean that two or more components do not have direct contact with each other, but still cooperate or interact with each other. The embodiments disclosed herein are not necessarily limited to the content herein.

[0037] "A, B, and C at least one of" has the same meaning as "at least one of A, B, or C", and includes the following combinations of A, B, and C: only A, only B, only C, a combination of A and B, a combination of A and C, a combination of B and C, and a combination of A, B, and C.

[0038] "A and / or B" includes the following three combinations: only A, only B, and a combination of A and B.

[0039] It will be understood that when a layer or element is referred to as being "on" another layer or substrate, it can be directly on the other layer or substrate, or intervening layers can also be present.

[0040] Exemplary embodiments are described herein with reference to cross-sectional and / or plan view illustrations that are schematic illustrations of idealized embodiments. Variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and / or tolerances, are to be expected. Thus, embodiments should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, an etched region illustrated as a rectangle will, typically, have jagged edges. Thus, the regions illustrated in the figures are schematic and their shapes are not intended to illustrate the precise shape of a region of a device and are not intended to limit the scope of an embodiment.

[0041] Some embodiments of the disclosure provide a display device that can be any display device that displays images whether in motion (e.g., video) or stationary (e.g., a still image), and whether textual or pictorial. More specifically, it is contemplated that the display devices of the embodiments can be implemented in or associated with a variety of electronic devices such as, but not limited to, mobile telephones, wireless devices, personal data assistants (PDAs), handheld or portable computers, GPS receivers / navigators, cameras, MP4 players, camcorders, game consoles, wrist watches, clocks, calculators, television monitors, flat-panel displays, computer monitors, auto displays (e.g., odometer display, etc.), cockpit controls and / or displays, camera view displays (e.g., display of a rear view camera in a vehicle), electronic photographs, electronic billboards or signs, projections, architectural structures, packaging, and aesthetic structures (e.g., display of images on a piece of jewelry) and the like.

[0042] FIG. 1 is a structural diagram of a display device according to some embodiments. As shown in FIG. 1, the display device 1000 includes a frame 100, a cover plate 200, a display panel 300, a circuit board 400, and other electronic components including a camera.

[0043] The longitudinal section of the frame 100 is in a U shape, the display panel 300, the circuit board 400, and other electronic components including a camera are disposed in the frame 100, the circuit board 400 is located between the display panel 300 and the frame 100, and the cover plate 200 is located on the light-out side of the display panel 300. The side of the display panel 300 for displaying images is the light-out side of the display panel 300, and the side of the display panel 300 facing away from the light-out side of the display panel 300 is the non-light-out side of the display panel 300.

[0044] Exemplarily, the circuit board 400 is located at the non-light-emitting side of the display panel 300, and the circuit board 400 is electrically connected with the display panel 300. The circuit board 400 is configured to provide a driving signal for the display panel 300, so as to ensure normal display of the display panel 300.

[0045] Exemplarily, the display panel 300 can be an organic light emitting diode (OLED) display panel, a quantum dot light emitting diode (QLED) display panel, a micro light emitting diode (Micro LED) display panel, a mini light emitting diode (Mini LED) display panel, or the like, which is not limited in the present disclosure. In the following, some embodiments of the present disclosure are described by taking the display panel 300 as an OLED display panel.

[0046] In some examples, as shown in FIG. 2, the display panel 300 includes a substrate 1, a pixel defining layer 2, and a plurality of light emitting devices 3.

[0047] Exemplarily, the type of the substrate 1 includes various types, which can be selected and arranged according to actual needs.

[0048] Exemplarily, the substrate 1 can be a rigid substrate. The rigid substrate can be a glass substrate or a polymethyl methacrylate (PMMA) substrate, or the like.

[0049] Exemplarily, the substrate 1 can be a flexible substrate. The flexible substrate can be a polyethylene terephthalate (PET) substrate, a polyethylene naphthalate two formic acid glycol ester (PEN) substrate, or a polyimide (PI) substrate, or the like. In this case, the display panel 300 can realize flexible display, for example.

[0050] Optionally, the substrate 1 can be formed as a single layer, a double layer, or a multi-layer, which is not limited in the embodiments of the present disclosure.

[0051] In some examples, as shown in FIG. 2 and FIG. 3, the display panel 300 further includes a circuit structure layer 10 located between the substrate 1 and the pixel defining layer 2.

[0052] It can be understood that the circuit structure layer 10 refers to a film layer in which a plurality of pixel driving circuit arrays are located, and includes a plurality of patterned conductive layers and insulating layers. For example, as shown in FIG. 2, the circuit structure layer 10 includes a plurality of pixel driving circuits 101 and a plurality of signal lines and the like.

[0053] The pixel driving circuit 101 is generally composed of electronic devices such as thin film transistors (TFTs) and capacitors. For example, the pixel driving circuit 101 can be of a structure such as “2T1C”, “6T1C”, “7T1C”, “6T2C” or “7T2C”. Here, “T” represents a transistor, for example, a thin film transistor. The number before “T” represents the number of transistors. “C” represents a capacitor, and the number before “C” represents the number of capacitors. In some embodiments of the present disclosure, only one thin film transistor 1011 is shown in the drawings, as shown in FIG. 2. For example, the thin film transistor 1011 can be a driving transistor.

[0054] Specifically, as shown in FIG. 2, the circuit structure layer 10 can include a semiconductor layer 102, a first gate insulating layer 103, a gate metal layer 104, a second gate insulating layer 105, and a source-drain metal layer 106. The semiconductor layer 102 includes active layers of a plurality of thin film transistors 1011. The gate metal layer 104 includes gates of the plurality of thin film transistors 1011. The source-drain metal layer 106 includes sources and drains of the plurality of thin film transistors 1011.

[0055] It can be understood that the thin film transistors 1011 included in the pixel driving circuit 101 can be top-gate thin film transistors or bottom-gate thin film transistors, and the embodiments of the present disclosure do not limit this. For example, the thin film transistors 1011 shown in FIG. 2 are top-gate thin film transistors.

[0056] In addition, the plurality of thin film transistors 1011 can include low temperature poly-silicon thin film transistors (LTPS TFTs) and / or oxide thin film transistors (Oxide TFTs).

[0057] In some examples, as shown in FIGS. 2 and 3, the pixel defining layer 2 is disposed on the substrate 1.

[0058] In the case where the display panel 300 includes the circuit structure layer 10, the pixel defining layer 2 is located on the side of the circuit structure layer 10 away from the substrate 1.

[0059] As shown in FIG. 3, the pixel definition layer 2 has a first opening 21 and a second opening 22. The first opening 21 and the second opening 22 are arranged at intervals. The top view structure of the pixel definition layer 2 is similar to a grid structure, and the first opening 21 and the second opening 22 constitute the mesh of the grid structure.

[0060] Exemplarily, the shape of the first opening 21 and the shape of the second opening 22 can be various, such as circular, quadrilateral, pentagonal, hexagonal, etc., and the embodiments of the present disclosure do not limit this.

[0061] In addition, the shape of the first opening 21 and the shape of the second opening 22 can be the same or different. The embodiments of the present disclosure do not limit this.

[0062] The area of the orthographic projection of the first opening 21 on the substrate 1 and the area of the orthographic projection of the second opening 22 on the substrate 1 can be the same or different. The embodiments of the present disclosure do not limit this. For example, the area of the orthographic projection of the first opening 21 on the substrate 1 is greater than the area of the orthographic projection of the second opening 22 on the substrate 1.

[0063] Exemplarily, the material used by the pixel definition layer 2 can include at least one of inorganic insulating material and organic insulating material. For example, the material of the pixel definition layer 2 can be silicon nitride (SiNx), silicon oxynitride (SiON), or silicon oxide (SiOx), etc.

[0064] Exemplarily, as shown in FIG. 3, at least part of one light emitting device 3 is located in one first opening 21.

[0065] Exemplarily, one first opening 21 exposes all of the anode 301 of one light emitting device 3. Exemplarily, one first opening 21 exposes part of the anode 301 of one light emitting device 3, and another part of the anode 301 is covered by the pixel definition layer 2, as shown in FIG. 2 and FIG. 3. The embodiments of the present disclosure do not limit this.

[0066] As shown in FIG. 2 and FIG. 3, in the case that the display panel 300 further includes a circuit structure layer 10 located between the substrate 1 and the pixel definition layer 2, the light emitting device 3 is located on the side of the circuit structure layer 10 away from the substrate 1.

[0067] Among them, the light emitting device 3 and the pixel driving circuit 101 in the circuit structure layer 10 are electrically connected. The pixel driving circuit 101 can provide a driving signal for the light emitting device 3 to drive the light emitting device 3 to emit light.

[0068] Exemplarily, the electrical connection relationship between the light emitting device 3 and the pixel driving circuit 101 includes various, which can be selected and set according to actual needs, and the present disclosure does not limit this.

[0069] For example, the plurality of pixel driving circuits 101 and the plurality of light emitting devices 3 can be coupled one-to-one. For another example, one pixel driving circuit 101 can be coupled with a plurality of light emitting devices 3. For yet another example, a plurality of pixel driving circuits 101 can be coupled with one light emitting device 3.

[0070] Hereinafter, the present disclosure will be described schematically with an example that one pixel driving circuit 101 is coupled with one light emitting device 3.

[0071] For example, in the display panel 300, the pixel driving circuit 101 can generate a driving signal, each light emitting device 3 can emit light under the driving action of the driving signal generated by the corresponding pixel driving circuit 101, and the light emitted by the plurality of light emitting devices 3 cooperates with each other, so that the display panel 300 realizes image display.

[0072] For example, the light emitting device 3 described above can be an OLED light emitting device.

[0073] As shown in FIGS. 2 and 3, the light emitting device 3 includes an anode 301, a light emitting part 302, and a cathode 303 which are sequentially stacked in a direction away from the substrate 1. Among them, the anode 301 is electrically connected with the drain of the thin film transistor 1011 used as a driving transistor in the pixel driving circuit 101.

[0074] In some examples, the light emitting part 302 can include an electroluminescent (EL) layer. In other examples, the light emitting part 302 includes one or more of an election transporting layer (ETL), an election injection layer (EIL), a hole transporting layer (HTL), and a hole injection layer (HIL) in addition to the EL layer. In the case that the display panel 300 is an organic electroluminescent display substrate, the EL layer is an organic light emitting layer. In the case that the display panel 300 is a quantum dot electroluminescent display substrate, the EL layer is a quantum dot light emitting layer.

[0075] For example, as shown in FIGS. 3 and 4, the light emitting part 302 includes a first functional layer 3021 and a second functional layer 3022 which are sequentially stacked in a direction away from the substrate 1.

[0076] The first functional layer 3021 can be a hole transporting layer (HTL), a hole injection layer (HIL), or an electron blocking layer (EBL), for example.

[0077] In some examples, as shown in FIG. 3 and FIG. 4, the display panel 300 further comprises an auxiliary electrode 4.

[0078] The auxiliary electrode 4 is located between the pixel defining layer 2 and the substrate 1.

[0079] In some examples, when the display panel 300 further comprises a circuit structure layer 10 located between the substrate 1 and the pixel defining layer 2, the auxiliary electrode 4 can be disposed in the circuit structure layer 10. For example, the auxiliary electrode 4 can be disposed in the same layer as a source-drain metal layer 106 in the circuit structure layer 10. For another example, the auxiliary electrode 4 can also be disposed in the same layer as a gate metal layer 104 in the circuit structure layer 10.

[0080] In other examples, the auxiliary electrode 4 can be disposed in the same layer as an anode 301 of the light emitting device 3. Embodiments of the present disclosure do not limit this.

[0081] As shown in FIG. 3, the auxiliary electrode 4 overlaps with the second opening 22 in a direction perpendicular to the substrate 1. An edge of a cathode 303 of the light emitting device 3 extends into the second opening 22 and is electrically connected to the auxiliary electrode 4.

[0082] For example, the plurality of second openings 22 expose the entire auxiliary electrode 4. For another example, the plurality of second openings 22 expose a part of the auxiliary electrode 4, and another part of the auxiliary electrode 4 is covered by the pixel defining layer 2. Embodiments of the present disclosure do not limit this.

[0083] For example, a projection of the auxiliary electrode 4 on the substrate 1 is in a grid shape. The grid shape structure comprises a plurality of meshes. A cathode 303 of a light emitting device 3 is located in one mesh and is electrically connected to the auxiliary electrode 4.

[0084] It should be noted that the auxiliary electrode 4 is a conductive structure and can be made of one or more conductive materials. The conductive material can be a metal material, an alloy material, graphene, etc., which is not limited here.

[0085] In this embodiment, by setting an auxiliary electrode 4 and electrically connecting the cathodes 303 of multiple light-emitting devices 3 to the auxiliary electrode 4, it is ensured that the light-emitting parts 302 in each light-emitting device 3 can receive approximately the same electrical signal transmitted by the cathode 303. This is beneficial to improving the accuracy of the electrical signals received by the multiple light-emitting parts 302, and thus to improving the display uniformity of the display panel 300.

[0086] In some embodiments, as shown in FIG3, the display panel 300 further includes an isolation structure layer 5.

[0087] As shown in Figure 3, the isolation structure layer 5 is disposed on the side of the pixel defining layer 2 away from the substrate 1. The isolation structure layer 5 has a third opening 51, and the first opening 21 and the second opening 22 are located within the range of the third opening 51.

[0088] For example, the orthographic projection of the first opening 21 onto the substrate 1 is within the range of the orthographic projection of the third opening 51 onto the substrate 1. The orthographic projection of the second opening 22 onto the substrate 1 is within the range of the orthographic projection of the third opening 51 onto the substrate 1.

[0089] For example, the cross-sectional shape of the isolation structure layer 5 is an undercut structure (e.g., an "I" shape or a "T" shape).

[0090] For example, the isolation structure layer 5 can have two, three, or more layers. The embodiments of this disclosure are not limited in this regard. It is only necessary to ensure that the isolation structure layer 5 has an undercut structure.

[0091] The isolation structure layer 5 is used to isolate the light-emitting portions 302 of different light-emitting devices 3, avoiding crosstalk or color mixing problems between adjacent sub-pixels (e.g., including the aforementioned light-emitting devices 3 and the pixel driving circuit 101 electrically connected to the light-emitting devices 3), thereby giving the display panel 300 higher clarity, color, and uniformity. The sidewalls of the isolation structure layer 5 have an undercut structure, which can better disconnect the light-emitting portions 302 of the light-emitting devices 3. The sidewalls of the isolation structure layer 5 refer to the sidewalls of the isolation structure layer 5 that are perpendicular or substantially perpendicular to the substrate 1.

[0092] For example, when the display panel 300 includes an isolation structure layer 5, a photolithography process can be used to prepare the light-emitting part 302 and the cathode 303 of the light-emitting device 3.

[0093] It should be noted that the above "photolithography process" can include: after forming the whole layer of the light-emitting layer and the cathode layer, coating a photoresist on the cathode layer, then setting a mask plate on the side of the photoresist away from the substrate, exposing and developing the photoresist through the mask plate, removing the exposed part of the photoresist, and retaining the part of the photoresist that is not exposed, thereby forming a patterned photoresist; then using the patterned photoresist as a mask to etch the light-emitting layer and the cathode layer, removing the part of the light-emitting layer and the cathode layer that is not shielded by the patterned photoresist, thereby obtaining a plurality of light-emitting parts 302 and cathodes 303. Finally, the display panel 300 to be formed can be placed in a stripping solution to dissolve and strip the patterned photoresist layer.

[0094] With the above arrangement, in the process of manufacturing the light-emitting part 302 of the light-emitting device 3, the light-emitting layer can be uniformly vapor-deposited on the display panel 300 to be vapor-deposited, the part of the light-emitting layer for forming the light-emitting part 302 is separated from other parts by the isolation structure layer 5, and the part of the light-emitting layer for forming the light-emitting part 302 is wrapped by the isolation structure layer 5. Therefore, the light-emitting layer can be patterned by a photolithography process to form the light-emitting part 302 of the light-emitting device 3. In the process of patterning and removing the other parts of the light-emitting layer, the part of the light-emitting layer for forming the light-emitting part 302 is separated from other parts by the isolation structure layer 5, so the etching solution does not directly contact the part of the light-emitting layer for forming the light-emitting part 302, thereby avoiding damage to the light-emitting layer 302. In addition, there is no need to use a mask plate to vapor-deposit the area where the light-emitting device 3 is located to form the light-emitting part 302, thereby effectively reducing the difficulty of manufacturing the display panel 300, reducing the manufacturing cost of the display panel 300, and making the arrangement density of each light-emitting device 3 in the display panel 300 not limited by the size of the FMM, which is conducive to improving the pixel density of the display panel 300. Moreover, there is no need to use the FMM and the etching process, thereby avoiding the problem of inaccurate alignment.

[0095] On the other hand, the first opening 21 and the second opening 22 are located within the range of the third opening 51 of the isolation structure layer 5, so that the isolation structure layer 5 can expose the anode 301 corresponding to the first opening 21 and the auxiliary electrode 4 corresponding to the second opening 22, thereby facilitating the formation of the light-emitting part 302 and the cathode 303 of the light-emitting device 3 in the first opening 21, and enabling the formed cathode 303 to extend into the second opening 22 and be electrically connected to the auxiliary electrode 4, thereby ensuring that the light-emitting part 302 in each light-emitting device 3 can receive substantially the same electrical signal transmitted by the cathode 303, which is conducive to improving the accuracy of the electrical signal received by the plurality of light-emitting parts 302, and thereby improving the display uniformity of the display panel 300.

[0096] In some embodiments, the material of the isolation structure layer 5 includes an inorganic material.

[0097] Exemplarily, the material of the isolation structure layer 5 can include silicon nitride (SiNx), silicon oxynitride (SiON), or silicon oxide (SiOx), etc.

[0098] As known from the above, the isolation structure layer 5 can be a multi-layer structure. In the case where the isolation structure layer 5 is a multi-layer structure, the materials of at least two film layers can be different. In the preparation process of the isolation structure layer 5, at least two isolation structure films arranged in a stack can be formed first, and then the at least two isolation structure films arranged in a stack are etched by using an alkaline etching solution. Since the materials of at least two film layers can be different, the etching rate of the alkaline etching solution for the film layers with different materials is different, so that the isolation structure layer 5 with an undercut structure can be formed, thereby effectively isolating any adjacent light emitting parts 302 of the light emitting devices 3.

[0099] Exemplarily, the isolation structure layer 5 is arranged around the light emitting device 3, so as to ensure that the isolation structure layer 5 can effectively isolate any two adjacent light emitting parts 302.

[0100] In some implementations, the material of the isolation structure layer 5 includes a metal material, and the cathodes 303 of adjacent light emitting devices 3 are electrically connected through the isolation structure layer 5.

[0101] It can be understood that the water blocking performance of the inorganic material isolation structure layer 5 is better than that of the metal material isolation structure layer 5.

[0102] In this embodiment, the auxiliary electrode 4 is arranged to realize the electrical connection between the cathodes 303 of the plurality of light emitting devices 3; on this basis, the material of the isolation structure layer 5 includes an inorganic material, on the one hand, any two light emitting parts 302 and any two cathodes 303 can be isolated by using the isolation structure layer 5, and the isolation structure layer 5 is used to realize the mutual isolation of the light emitting devices 3 in the display panel 300, thereby effectively reducing the preparation difficulty of the display panel 300; on the other hand, the side surface of the light emitting device 3 is wrapped by the inorganic material isolation structure layer 5, which can better protect the light emitting device 3 than the metal material isolation structure layer 5, and the water blocking performance of the inorganic material isolation structure layer 5 is better, thereby improving the packaging performance of the display panel 300, avoiding the erosion of the light emitting device 3 caused by external water and oxygen, and thereby affecting the light emitting efficiency and service life of the light emitting device 3.

[0103] Further, in the case that the material of the isolation structure layer 5 is a metal material, when external light enters into the display panel 300 from the outside, the isolation structure layer 5 is easy to reflect the external light entering into the display panel 300, which affects the viewing effect of the viewer. In the embodiment of the present disclosure, the material of the isolation structure layer 5 is an inorganic material, compared with the isolation structure layer 5 of the metal material, the reflectivity of the isolation structure layer 5 of the inorganic material to the external light entering into the display panel 300 is reduced, thereby the viewing effect of the viewer can be improved.

[0104] In some embodiments, as shown in FIG. 3, the isolation structure layer 5 includes a first sub-isolation layer 501 and a second sub-isolation layer 502 which are stacked in a direction away from the substrate 1. The first sub-isolation layer 501 has a first sub-opening 511, and the second sub-isolation layer 502 has a second sub-opening 512, the first sub-opening 511 and the second sub-opening 512 are through to form at least part of the third opening 51. The orthographic projection of the second sub-opening 512 on the substrate 1 is located in the range of the orthographic projection of the first sub-opening 511 on the substrate 1.

[0105] In the case that the isolation structure layer 5 includes the first sub-isolation layer 501 and the second sub-isolation layer 502 which are stacked in a direction away from the substrate 1, the shape of the cross-sectional view of the isolation structure layer 5 is a “T” structure, as shown in FIG. 3.

[0106] For example, at the side wall of the third opening 51, the boundary of the first sub-isolation layer 501 is inwardly recessed relative to the boundary of the second sub-isolation layer 502. That is, the second sub-isolation layer 502 at least blocks part of the first sub-opening 511 of the first sub-isolation layer 501.

[0107] For example, the material of the first sub-isolation layer 501 and the material of the second sub-isolation layer 502 are different, and the etching rate of the first sub-isolation layer 501 and the second sub-isolation layer 502 is different. Thus, in the process of forming the isolation structure layer 5 by etching process, a groove can be formed at the side wall of the isolation structure layer 5, so as to ensure that the isolation structure layer 5 can effectively isolate any two adjacent light emitting parts 302.

[0108] It can be understood that the thickness of the light emitting part 302 and the cathode 303 is small, after the deposition of the light emitting layer for forming the light emitting part 302 and the cathode layer for forming the cathode 303, the light emitting layer located at the third opening 51 is disconnected with the light emitting layer located on the isolation structure layer 5 at the third opening 51; the cathode layer located at the third opening 51 is disconnected with the cathode layer located on the isolation structure layer 5 at the third opening 51.

[0109] In the embodiment, the second sub-isolation layer 502 has a second sub-opening 512 in the isolation structure layer 5, and a normal projection of the second sub-opening 512 on the substrate 1 is located in a range of a normal projection of the first sub-opening 511 on the substrate 1, so that the isolation structure layer 5 forms an undercut structure at the third opening 51, and can effectively isolate any two adjacent light emitting parts 302. In this way, in the process of manufacturing the light emitting part 302 of the light emitting device 3, the light emitting layer material can be uniformly evaporated on the display panel 300 to be evaporated, and the light emitting layer can be patterned by using a photoetching process, so as to form the light emitting part 302 of the light emitting device 3, without the need of using a mask plate to evaporate the area where the light emitting device 3 is located to form the light emitting part 302, thereby effectively reducing the manufacturing difficulty of the display panel 300, reducing the manufacturing cost of the display panel 300, and improving the manufacturing efficiency of the display panel 300.

[0110] In some embodiments, as shown in FIG. 3, the second sub-isolation layer 502 includes a first edge 503 surrounding the second sub-opening 512, and the first edge 503 extends towards the center line of the first opening 21 compared with the first sub-isolation layer 501. The normal projection of the first edge 503 on the substrate 1 covers the normal projection of the second opening 22 on the substrate 1.

[0111] For example, the normal projection of the first edge 503 on the substrate 1 is arranged staggered with the normal projection of the first sub-isolation layer 501 on the substrate 1.

[0112] It can be understood that the isolation structure layer 5 has an undercut structure, in which the first sub-isolation layer 501 is recessed relative to the second sub-isolation layer 502, so as to form a groove at the side wall of the isolation structure layer 5. The above-mentioned first edge 503 can be understood as a part of the second sub-isolation layer 502 protruding relative to the first sub-isolation layer 501 at the position of the side wall of the isolation structure layer 5.

[0113] In the embodiment, the first edge 503 covers the second opening 22 on the substrate 1, that is, the first edge 503 can shield the second opening 22, so that the probability of the light-emitting material being deposited in the second opening 22 is reduced by controlling the deposition angle of the light-emitting material (for example, the deposition angle of the light-emitting material is about 90°) during the process of depositing the light-emitting material to form the light-emitting layer; and the cathode material can be deposited in the second opening 22 and contact the auxiliary electrode 4 exposed by the second opening 22 by controlling the deposition angle of the cathode material (for example, the deposition angle of the cathode material is smaller than that of the light-emitting material) during the process of depositing the cathode material to form the cathode layer after the light-emitting layer is formed. Since the first edge 503 can shield the second opening 22, the probability of the light-emitting material being deposited in the second opening 22 is reduced, so that the probability of the cathode 303 of the light-emitting device 3 and the auxiliary electrode 4 exposed by the second opening 22 being in poor electrical contact is reduced, thereby ensuring the effectiveness of the electrical connection between the cathode 303 and the auxiliary electrode 4, and improving the yield of the display panel 300.

[0114] It should be noted that the deposition angle of the light-emitting material refers to the angle between the deposition direction of the light-emitting material and the plane on which the display panel to be evaporated is located when the evaporation source evaporates the light-emitting material. In the case that the display panel to be evaporated is horizontally placed, the plane on which the display panel to be evaporated is located can be understood as a horizontal plane.

[0115] In some embodiments, as shown in FIG. 3, the light-emitting part 302 of the light-emitting device 3 is arranged to be staggered with the first edge 503 on the substrate 1, and the boundary of the light-emitting part 302 on the substrate 1 is connected with the boundary of the first edge 503 on the substrate 1.

[0116] As described above, the first edge 503 covers the second opening 22 on the substrate 1. The light-emitting part 302 of the light-emitting device 3 is arranged to be staggered with the first edge 503 on the substrate 1, that is, the light-emitting part 302 on the substrate 1 is arranged to be staggered with the second opening 22 on the substrate 1. Therefore, the effectiveness of the electrical connection between the cathode 303 and the auxiliary electrode 4 exposed by the second opening 22 can be ensured, thereby improving the yield of the display panel 300.

[0117] In some embodiments, the light-emitting part 302 of the light-emitting device 3 is arranged to be staggered with the first edge 503 on the substrate 1, and there is a gap between the boundary of the light-emitting part 302 on the substrate 1 and the boundary of the first edge 503 on the substrate 1.

[0118] As known from the above, the first edge 503 covers the second opening 22 in the orthographic projection on the substrate 1. The light emitting part 302 of the light emitting device 3 is arranged staggeredly with the orthographic projection of the first edge 503 on the substrate 1, that is, the orthographic projection of the light emitting part 302 on the substrate 1 is arranged staggeredly with the orthographic projection of the second opening 22 on the substrate 1. There is a gap between the boundary of the orthographic projection of the light emitting part 302 on the substrate 1 and the boundary of the orthographic projection of the first edge 503 on the substrate 1, which can further reduce the probability of affecting the electrical contact between the cathode 303 and the auxiliary electrode 4 exposed by the second opening 22 due to the deposition of part of the light emitting material in the second opening 22, thereby improving the yield of the display panel 300.

[0119] In some embodiments, as shown in FIG. 3, the first edge 503 includes a first part 5031 close to the light emitting device 3 and a second part 5032 close to the second opening 22; the width of the second part 5032 is greater than the width of the first part 5031; the width is the size of the first edge 503 in the direction from the center of the second sub-opening 512 to the boundary.

[0120] It can be understood that the first part 5031 functions to disconnect the light emitting layer located on the first part 5031 from the light emitting layer located in the third opening 51 during the formation of the light emitting part 302. The second part 5032 functions to disconnect the light emitting layer located on the second part 5032 from the light emitting layer located in the third opening 51 during the formation of the light emitting part 302, and to shield the second opening 22 to avoid the deposition of the light emitting material in the second opening 22, thereby affecting the effectiveness of the electrical contact between the cathode 303 and the auxiliary electrode 4.

[0121] In the present embodiment, the width of the second part 5032 is greater than the width of the first part 5031, which can achieve the above technical effects, and on this basis, the width of the isolation structure layer 5 is minimized to reduce the occupied space of the isolation structure layer 5, which is conducive to improving the pixel density of the display panel 300 to some extent.

[0122] In some embodiments, the material of the first sub-isolation layer 501 includes silicon nitride; and the material of the second sub-isolation layer 502 includes silicon oxide.

[0123] It can be understood that, in the case where the isolation structure layer 5 includes the first sub-isolation layer 501 and the second sub-isolation layer 502, the first sub-isolation thin film and the second sub-isolation thin film are sequentially formed by using a sputtering process when the isolation structure layer 5 is formed. Then, the first sub-isolation thin film and the second sub-isolation thin film are etched. The first sub-isolation thin film is used to form the first sub-isolation layer 501, and the second sub-isolation thin film is used to form the second sub-isolation layer 502.

[0124] In this embodiment, the first sub-isolation layer 501 is made of silicon nitride; the second sub-isolation layer 502 is made of silicon oxide. Since silicon nitride and silicon oxide have different etching rates (the etching rate of silicon nitride is greater than that of silicon oxide), during the etching process of the first and second sub-isolation films, the second sub-isolation film is less affected by etching, while the first sub-isolation film is etched at a faster rate, facilitating the formation of an undercut structure (e.g., a "T"-shaped structure). Those skilled in the art can also select other suitable materials, as long as the above-mentioned technical effects can be achieved; the embodiments of this disclosure do not limit this.

[0125] In some embodiments, the isolation structure layer 5 further includes a third sub-isolation layer located on the side of the first sub-isolation layer 501 away from the second sub-isolation layer 502. The third sub-isolation layer has a third sub-opening, and the first sub-opening 511, the second sub-opening 512, and the third sub-opening are interconnected to form the third opening 51. The orthographic projection of the third sub-opening on the substrate 1 is within the range of the orthographic projection of the first sub-opening 511 on the substrate 1.

[0126] When the isolation structure layer 5 includes a first sub-isolation layer 501, a second sub-isolation layer 502, and a third sub-isolation layer stacked in a direction away from the substrate 1, the cross-sectional shape of the isolation structure layer 5 is an "I" shaped structure.

[0127] For example, if the material of the first sub-isolation layer 501 includes silicon nitride and the material of the second sub-isolation layer 502 includes silicon oxide, the material of the third sub-isolation layer may include silicon oxide.

[0128] For example, during the fabrication of the isolation structure layer 5, a complete third sub-isolation film (used to form the aforementioned third sub-isolation layer), a first sub-isolation film, and a second sub-isolation film can be formed sequentially. Then, an alkaline etching solution is used to etch the third sub-isolation film, the first sub-isolation film, and the second sub-isolation film. The alkaline etching solution has a relatively high etching rate on the first sub-isolation film, which is greater than its etching rate on the third and second sub-isolation films, thereby making the cross-sectional shape of the formed isolation structure layer 5 approximately "I"-shaped.

[0129] By adopting the above configuration, any two light-emitting parts 302 and any two cathodes 303 can be separated by the isolation structure layer 5. The isolation structure layer 5 can be used to separate the various light-emitting devices 3 in the display panel 300, effectively reducing the manufacturing difficulty of the display panel 300.

[0130] In some embodiments, as shown in FIG. 3, the display panel 300 further comprises: an encapsulation part 6 disposed on the side of the light emitting device 3 away from the substrate 1, the encapsulation part 6 covering the cathode 303 of the light emitting device 3 and the sidewall of the third opening 51 and extending to the surface of the isolation structure layer 5 away from the substrate 1.

[0131] For example, the number of the encapsulation parts 6 is multiple, and one encapsulation part 6 is disposed opposite to one light emitting device 3.

[0132] In some examples, there is a gap between any two adjacent encapsulation parts 6. In other embodiments, any two adjacent encapsulation parts 6 abut each other, as shown in FIG. 3. In yet other embodiments, one of any two adjacent encapsulation parts 6 overlaps the other encapsulation part 6. Embodiments of the present disclosure do not limit this.

[0133] As described above, in the case where the first sub-opening 511 and the second sub-opening 512 form the third opening 51, the orthographic projection of the second sub-opening 512 on the substrate 1 is within the orthographic projection of the first sub-opening on the substrate 1, and the orthographic projection of the light emitting part 302 on the substrate 1 is within the orthographic projection of the second sub-opening 5012 on the substrate 1, that is, the orthographic projection of the light emitting part 302 on the substrate 1 is within the orthographic projection of the third opening 51 on the substrate 1.

[0134] In embodiments of the present disclosure, the encapsulation part 6 covers the cathode 303 of the light emitting device 3 and the sidewall of the third opening 51 and extends to the surface of the isolation structure layer 5 away from the substrate 1, so that the encapsulation part 6 wraps the light emitting part 302 and the cathode 303 of the corresponding light emitting device 3.

[0135] For example, as shown in FIG. 3, the encapsulation part 6 at the groove of the isolation structure layer 5 forms a concave-convex structure similar to the groove of the isolation structure layer 5.

[0136] In some implementations, a photolithography lift-off process is used to realize the layout of sub-pixels of multiple colors.

[0137] Specifically, before forming the light emitting part and the cathode of the light emitting device 3 of a certain color sub-pixel (for example, a red sub-pixel), a stripping pattern is formed to shield other sub-pixel areas (for example, blue sub-pixels and green sub-pixels). Then, a light emitting material for forming the light emitting part 302 of the light emitting device 3 of the color sub-pixel (for example, the red sub-pixel) and a cathode material for forming the cathode 303 of the light emitting device 3 of the color sub-pixel (for example, the red sub-pixel) are sequentially deposited; part of the light emitting material and the cathode material is located in the pixel opening corresponding to the certain color sub-pixel (for example, the red sub-pixel) to be formed, and the other part is located on the side of the stripping pattern away from the substrate 1. Then, the display panel 300 to be stripped is placed in a stripping liquid to remove the stripping pattern and the light emitting material and the cathode material on the side of the stripping pattern away from the substrate 1.

[0138] In the above manufacturing process, in the etching process, in order to reduce the damage to the light emitting device 3 and the probability of performance degradation of the light emitting device 3, a fluorine-containing solvent is selected as the etching solution.

[0139] It can be understood that, in the etching process, the fluorine-containing etching solution directly contacts the light emitting device 3, which will cause damage to the light emitting device 3 to a certain extent.

[0140] In addition, fluorine-containing reagents, especially fluorides, have a variety of potential hazards to the human body. Moreover, fluorine-containing reagents have poor environmental friendliness.

[0141] In an embodiment of the present disclosure, when forming the light emitting part and the cathode of a certain color sub-pixel (for example, a red sub-pixel), a whole layer of light emitting layer and cathode layer is first formed, and then a layer of encapsulation film for forming the encapsulation part 6 is deposited, and then a photolithography process is used to etch and remove part of the whole layer of light emitting layer, cathode layer and encapsulation film located in other color sub-pixel areas (for example, blue sub-pixels and green sub-pixels).

[0142] The encapsulation film used to form the encapsulation part 6 can wrap the light-emitting layer (used to form the light-emitting part 302 of the light-emitting device 3) and the cathode layer (used to form the cathode 303 of the light-emitting device 3) located in the third opening 51, thereby protecting the light-emitting layer and the cathode layer located in the third opening 51. In the process of etching to form the light-emitting part 302 and the cathode 303, a reagent without fluorine can be selected to etch and remove the entire light-emitting layer, the cathode layer, and the part of the encapsulation film located in the other color sub-pixel area (for example, the blue sub-pixel and the green sub-pixel), thereby solving the problem in the related art that a fluorine-containing solvent needs to be selected as the etching solution when etching to form the light-emitting part 302 and the cathode 303, and the fluorine-containing reagent has multiple potential hazards to the human body and poor environmental friendliness. In addition, the etching solution can also be prevented from directly contacting the light-emitting device 3, thereby preventing damage to the light-emitting device 3 and causing a decrease in the efficiency of the light-emitting device 3.

[0143] In some embodiments, as shown in FIG. 4, the pixel defining layer 2 includes a first sub-defining layer 201 and a second sub-defining layer 202 which are sequentially stacked in a direction away from the substrate 1.

[0144] As shown in FIG. 4, the first sub-defining layer 201 has a fourth sub-opening 221, and the second sub-defining layer 202 has a fifth sub-opening 222. The fourth sub-opening 221 and the fifth sub-opening 222 are in communication to form at least part of the second opening 22. The orthographic projection of the fifth sub-opening 222 on the substrate 1 is located within the orthographic projection of the fourth sub-opening 221 on the substrate 1.

[0145] For example, at the sidewall of the second opening 22, the boundary of the first sub-defining layer 201 is recessed relative to the boundary of the second sub-defining layer 202. That is, the second sub-defining layer 202 at least blocks part of the fourth sub-opening 221 of the first sub-defining layer 201.

[0146] For example, the etching rate of the second sub-defining layer 202 is less than the etching rate of the first sub-defining layer 201. In this way, during the etching process used to form the pixel defining layer 2, a groove can be formed at the sidewall of the pixel defining layer 2, thereby ensuring that the pixel defining layer 2 can effectively separate any two adjacent light-emitting parts 302.

[0147] It can be understood that the thicknesses of the light-emitting part 302 and the cathode 303 are small, and after deposition of the light-emitting layer for forming the light-emitting part 302 and the cathode layer for forming the cathode 303, the light-emitting layer located at the second opening 22 is disconnected from the light-emitting layer located on the pixel defining layer 2 at the second opening 22; the cathode layer located at the second opening 22 is disconnected from the cathode layer located on the pixel defining layer 2 at the second opening 22.

[0148] In the embodiment, the fifth sub-opening 222 of the second sub-defining layer 202 in the pixel defining layer 2 has a normal projection on the substrate 1 located in the normal projection of the fourth sub-opening 221 of the first sub-defining layer 201 on the substrate 1, so that the pixel defining layer 2 forms an Undercut structure at the second opening 22, which can isolate the light-emitting part 302 of the adjacent light-emitting device 3. In this way, during the manufacturing process of the light-emitting part 302 of the light-emitting device 3, the light-emitting layer material can be uniformly evaporated on the display panel 300 to be evaporated, and the light-emitting layer can be patterned by using a photolithography process, thereby forming the light-emitting part 302 of the light-emitting device 3 without the need to use a mask plate to evaporate the area where the light-emitting device 3 is located to form the light-emitting part 302, thereby reducing the cumbersome FMM screen process, thereby effectively reducing the difficulty of manufacturing the display panel 300, reducing the manufacturing cost of the display panel 300, and also enabling the arrangement density of each light-emitting device 3 in the display panel 300 to be not limited by the size of the FMM, which is conducive to improving the pixel density of the display panel 300, and without the need to use the FMM and the etching process, avoiding the problem of inaccurate alignment.

[0149] On the other hand, by forming the Undercut structure of the pixel defining layer 2 at the second opening 22 to isolate the light-emitting part 302 of the adjacent light-emitting device 3, the manufacturing process of the display panel 300 can be simplified, which is conducive to the thinning of the display panel 300.

[0150] In some embodiments, the thickness of the first sub-defining layer 201 is greater than the thickness of the second sub-defining layer 202. The thickness is the size of the first sub-defining layer 201 or the second sub-defining layer 202 in the direction perpendicular to the substrate 1.

[0151] For example, when the thickness of the first sub-defining layer 201 is , the thickness of the second sub-defining layer 202 can be For another example, when the thickness of the first sub-defining layer 201 is , the thickness of the second sub-defining layer 202 can be

[0152] As known from the above, the light emitting part 302 has a certain thickness, and by making the thickness of the first sub-definition layer 201 greater than the thickness of the second sub-definition layer 202, the pixel definition layer 2 can better isolate the light emitting layer used to form the light emitting part 302.

[0153] In some embodiments, the ratio of the thickness of the second sub-definition layer 202 to the thickness of the first sub-definition layer 201 ranges from 0.3 to 0.7. For example, the ratio of the thickness of the second sub-definition layer 202 to the thickness of the first sub-definition layer 201 can be 0.3, 0.4, 0.5, 0.6, 0.7, etc. Embodiments of the present disclosure do not limit this.

[0154] With the above arrangement, the pixel definition layer 2 can isolate the light emitting layer used to form the light emitting part 302, and also avoid the thickness of the pixel definition layer 2 being too large, which is not conducive to the thinning of the display panel 300.

[0155] In some embodiments, as shown in FIG. 4, the display panel 300 further includes an encapsulation part 6 disposed on the side of the light emitting device 3 away from the substrate 1. The encapsulation part 6 covers the cathode 303 of the light emitting device 3, part of the encapsulation part 6 is filled in the second opening 22, and the encapsulation part 6 extends to the surface of the pixel definition layer 2 away from the substrate 1.

[0156] For example, the number of encapsulation parts 6 is multiple, and one encapsulation part 6 is disposed opposite one light emitting device 3.

[0157] In some examples, there is a gap between any two adjacent encapsulation parts 6. In other embodiments, any two adjacent encapsulation parts 6 abut each other, as shown in FIG. 4. In yet other embodiments, among any two adjacent encapsulation parts 6, one encapsulation part 6 overlaps the other encapsulation part 6. Embodiments of the present disclosure do not limit this.

[0158] In the embodiment, the encapsulation part 6 covers the cathode 303 of the light emitting device 3, and can wrap the partial light emitting layer for forming the light emitting part 302 of the light emitting device 3 and the cathode layer for forming the cathode 303 of the light emitting device 3 during the preparation of the light emitting device 3, so as to protect the partial light emitting layer for forming the light emitting part 302 of the light emitting device 3 and the cathode layer for forming the cathode 303 of the light emitting device 3. During the etching process for forming the light emitting part 302 and the cathode 303, a reagent without fluorine can be selected to etch and remove the whole layer of the light emitting layer, the cathode layer and the encapsulation film in the partial region in the other color sub-pixel area (for example, the blue sub-pixel and the green sub-pixel), so as to solve the problem in the prior art that the fluorine-containing solvent needs to be selected as the etching solution when the light emitting part 302 and the cathode 303 are etched, and the fluorine-containing reagent has multiple potential hazards to the human body and poor environmental friendliness. In addition, the etching solution can also be prevented from directly contacting the light emitting device 3, so as to avoid the damage to the light emitting device 3 and the decrease in the efficiency of the light emitting device 3.

[0159] In some embodiments, the edge of the cathode 303 and the side of the first boundary layer 201 away from the first opening 21 have a gap in the second opening 22, and the encapsulation part 6 fills the gap and covers the side of the cathode 303.

[0160] For example, the encapsulation part 6 fills the gap.

[0161] Therefore, the water vapor and the like from the outside can be prevented from entering the light emitting part 302 and the cathode 303 through the gap, so as to avoid the erosion of the light emitting device 3 and the influence on the light emitting efficiency and the service life of the light emitting device 3.

[0162] In some embodiments, the material of the first sub-boundary layer 201 includes silicon nitride, and the material of the second sub-boundary layer 202 includes silicon oxide.

[0163] It can be understood that, in the case where the pixel boundary layer 2 includes the first sub-boundary layer 201 and the second sub-boundary layer 202, the first sub-boundary film and the second sub-boundary film are sequentially formed by using a sputtering process when the pixel boundary layer 2 is formed. Then, the first sub-boundary film and the second sub-boundary film are etched. The first sub-boundary film is used to form the first sub-boundary layer 201, and the second sub-boundary film is used to form the second sub-boundary layer 202.

[0164] In the embodiment, the material of the first sub-boundary layer 201 comprises silicon nitride, and the material of the second sub-boundary layer 202 comprises silicon oxide. Since the etching rates of silicon nitride and silicon oxide are different, the etching rate of silicon nitride is greater than that of silicon oxide. In the etching process of the first sub-boundary film and the second sub-boundary film, the second sub-boundary film is less affected by etching, and the first sub-boundary film is etched at a faster speed, so as to facilitate the formation of an undercut structure (for example, a "T" shaped structure). Those skilled in the art can also select other suitable materials as long as the above technical effects can be achieved, and the embodiments of the present disclosure do not limit this.

[0165] In some embodiments, as shown in FIGS. 3 and 4, the number of light emitting devices 3 is multiple, the number of packaging portions 6 is multiple, and one packaging portion 6 covers one light emitting device 3. The edges of the multiple packaging portions 6 are connected.

[0166] For example, the multiple light emitting devices 3 include multiple red light emitting devices, multiple blue light emitting devices, and multiple blue light emitting devices.

[0167] In the embodiment, the edges of the multiple packaging portions 6 are connected to form a whole packaging layer, thereby protecting the light emitting device 3 and further avoiding the erosion of external water and oxygen to the light emitting device 3, so as to affect the light emitting efficiency and service life of the light emitting device 3.

[0168] In some embodiments, the auxiliary electrode 4 is made of the same material as the anode 301 and is arranged in the same layer.

[0169] For example, the auxiliary electrode 4 and the anode 301 can be made of transparent metal oxide conductive materials such as indium tin oxide (ITO), indium zinc oxide (IZO), and fluorine-doped tin oxide (FTO); or a multilayer structure of the above transparent metal oxide conductive materials and metal materials (for example, silver Ag), for example, prepared by ITO\Ag\ITO three layers.

[0170] For example, the top view structure of the auxiliary electrode 4 is similar to a grid structure, and the grid structure includes multiple mesh holes. One anode 301 can be located in one mesh hole, and the auxiliary electrode 4 is electrically insulated from the anode 301.

[0171] It is easy to understand that the "same layer" mentioned in the embodiments of the present disclosure refers to a layer structure formed by using the same film forming process to form a film layer for forming a specific pattern, and then using the same mask plate to form by a one-time patterning process. Depending on the specific pattern, the one-time patterning process can include multiple exposure, development or etching processes, and the specific patterns in the formed layer structure can be continuous or discontinuous, and these specific patterns can also be at different heights or have different thicknesses.

[0172] In the above, the "patterning process" can refer to a process including photolithography, or a process including photolithography and etching steps, and can also include printing, inkjet and other processes for forming a predetermined pattern; the photolithography process refers to a process for forming a pattern using photoresist, mask plate, exposure machine, etc. including film forming, exposure, development and other processes. The corresponding patterning process can be selected according to the structure formed in the present disclosure.

[0173] In the present embodiment, the auxiliary electrode 4 is the same as the anode 301 and is arranged in the same layer, that is, formed by a one-time patterning process, that is, the auxiliary electrode 4 is formed at the same time as the anode 301, which is simple in process and ensures that the display uniformity of the display panel 300 is improved without additional preparation steps of the display panel 300, thereby saving manufacturing costs.

[0174] In some embodiments, as shown in FIGS. 3 and 4, the display panel 300 further includes an encapsulation structure 7.

[0175] In the above, the encapsulation structure 7 is configured to encapsulate the pixel driving circuit 101 and the plurality of light emitting devices 3 in the circuit structure layer 10 on the substrate 1 to block water and oxygen, so as to avoid the erosion of the light emitting devices 3 caused by external water and oxygen, thereby affecting the light emitting efficiency and service life of the light emitting devices 3.

[0176] For example, the encapsulation structure 7 can include an organic encapsulation layer and an inorganic encapsulation layer which are sequentially stacked away from the substrate 1. It can be understood that the organic encapsulation layer is mainly used for planarization and stress relief, and the inorganic encapsulation layer and the encapsulation part 6 are mainly used for blocking water / oxygen and wrapping the organic encapsulation layer located between the encapsulation part 6 and the inorganic encapsulation layer.

[0177] In the above, the material of the organic encapsulation layer includes a polymer combination of one or more of an acrylic-based polymer, a silicon-based polymer and an epoxy-based polymer, and the above material is made on each light emitting device 30 by an Ink Jet Printing (IJP) method and is ultraviolet (UV) cured to form the organic encapsulation layer 0.

[0178] The material of the inorganic encapsulation layer includes one or more of a combination of silicon nitride (SiNx), silicon dioxide (SiOx), silicon oxynitride (SiON). The inorganic encapsulation layer can be formed by a chemical vapor deposition (CVD) process.

[0179] Embodiments of the present disclosure also provide a manufacturing method of a display panel, for example, for manufacturing the display panel 300 provided in some embodiments above. Wherein, FIG. 5 is a flowchart of the manufacturing method of the display panel 300 provided in some embodiments of the present disclosure; FIGS. 6-15 are cross-sectional structure diagrams corresponding to each step in the manufacturing method of the display panel 300 according to some embodiments.

[0180] It should be understood that the steps shown in FIG. 5 are not exclusive, and other steps can be performed before, after or between any of the steps shown. In addition, some of the steps can be performed simultaneously, or can be performed in an order different from that shown in FIG. 5.

[0181] As shown in FIG. 5, the above manufacturing method includes the following a1-a3.

[0182] a1: Forming the anode 301 and the auxiliary electrode 4 on the substrate 1.

[0183] In the case where the anode 301 and the auxiliary electrode 4 are of the same material and are disposed in the same layer, a sputtering or evaporation process can be used to form an anode film, then a photoresist pattern is formed on the anode film by coating, exposure and development processes, and based on the photoresist pattern, an etching process is used to etch the anode film to form a plurality of anodes 301 and a plurality of auxiliary electrodes 4. Finally, the photoresist pattern is stripped.

[0184] For example, the anode 301 and the auxiliary electrode 4 can be made of transparent metal oxide conductive materials such as indium tin oxide (ITO), indium zinc oxide (IZO) and fluorine-doped tin oxide (FTO); or a multilayer stack of the above transparent metal oxide conductive materials and metal materials (such as silver Ag), for example, prepared by ITO\Ag\ITO three layers.

[0185] Exemplarily, in the case that the display panel 300 further comprises the circuit structure layer 10, both the anode 301 and the auxiliary electrode 4 are located on the side of the circuit structure layer 10 away from the substrate 1. Before forming the anode 301 and the auxiliary electrode 4, the preparation method further comprises forming the circuit structure layer 10 on the substrate 1. Exemplarily, as to the structure of the circuit structure layer 10, reference can be made to the description in some of the above-mentioned embodiments, which will not be repeated here.

[0186] a2: forming the pixel defining layer 2; the pixel defining layer 2 has a first opening 21 and a second opening 22. The first opening 21 and the second opening 22 are arranged at intervals. The anode 301 overlaps the first opening 21 in the direction perpendicular to the substrate 1; the auxiliary electrode 4 overlaps the second opening 22 in the direction perpendicular to the substrate 1.

[0187] Exemplarily, the material of the pixel defining layer 2 comprises an inorganic material.

[0188] Exemplarily, the pixel defining layer 2 can be formed by depositing a film with a certain thickness on the substrate 1 through a physical vapor deposition (PVD) or a plasma enhanced chemical vapor deposition (PECVD) method.

[0189] Exemplarily, one first opening 21 exposes at least a part of the anode 301 of one light emitting device 3. One second opening 22 exposes at least a part of one auxiliary electrode 4.

[0190] a3: sequentially forming the light emitting part 302 and the cathode 303 in the first opening 21; the edge of the cathode 303 extends into the second opening 22 and is electrically connected with the auxiliary electrode 4.

[0191] Exemplarily, the light emitting part 302 can be formed by a photolithography process. For example, after forming an integral light emitting layer, a patterned photoresist is formed on the integral light emitting layer, and the integral light emitting layer is etched with the patterned photoresist as a mask, so as to remove the part of the light emitting layer not covered by the patterned photoresist, thereby obtaining the light emitting part 302.

[0192] Exemplarily, the cathode 303 can be formed by an evaporation process. That is, first, a heating method such as current heating, electron beam bombardment heating, and laser heating is used to evaporate the evaporation material into an evaporation vapor of atoms or molecules; second, the evaporation vapor diffuses to a predetermined position of the deposition surface of the substrate under the action of a mask plate; and finally, the evaporation vapor collides with the substrate surface in the predetermined position and condenses, thereby forming different thin films. Specifically, in the process of forming the cathode 303 by evaporation, the evaporation source evaporates evaporation material to the display panel 300 to be evaporated. For example, the evaporation source evaporates the material of the cathode to the display panel 300 to be evaporated. By controlling the evaporation angle of the display panel 300 to be evaporated, the cathode 303 is in contact with the surface of the auxiliary electrode 4 exposed by the second opening 22, effective electrical connection between the cathode 303 and the auxiliary electrode 4 is achieved, and then the electrical connection between any two adjacent cathodes 303 is ensured.

[0193] In addition, the light emitting part 302 and the cathode 303 can be formed by the same patterning process, thereby facilitating the simplification of the preparation process of the display panel 300.

[0194] In the embodiment, by arranging the auxiliary electrode 4 and electrically connecting the cathode 303 of the plurality of light emitting devices 3 with the auxiliary electrode 4, it is ensured that the light emitting part 302 in each light emitting device 3 can receive substantially the same electrical signal transmitted by the cathode 303, which is beneficial to improve the accuracy of the electrical signal received by the plurality of light emitting parts 302, and then is beneficial to improve the display uniformity of the display panel 300.

[0195] In some embodiments, before the step a3, the preparation method further comprises:

[0196] a10: As shown in FIG. 6, the isolation structure layer 5 is formed on the side of the pixel defining layer 2 away from the substrate 1. The isolation structure layer 5 has a third opening 51, and the first opening 21 and the second opening 22 are located in the range of the third opening 51.

[0197] Exemplarily, the material and structure of the isolation structure layer 5 can refer to the description in some embodiments described above, which will not be repeated here.

[0198] The isolation structure layer 5 is used to separate the light emitting parts 302 of different light emitting devices 3. By arranging the isolation structure layer 5, any two light emitting parts 302 and any two cathodes 303 can be separated by using the isolation structure layer 5 in the preparation process of the display panel 300, and the isolation structure layer 5 is used to separate the light emitting devices 3 from each other in the display panel 300, thereby effectively reducing the preparation difficulty of the display panel 300 and reducing the preparation cost of the display panel 300.

[0199] a20: As shown in FIG. 7, a sacrificial layer 01 and a photoresist layer 02 are sequentially formed on the side of the isolation structure layer 5 away from the substrate 1. The sacrificial layer 01 and the photoresist layer 02 have through holes penetrating the third openings 51 corresponding to the target color light emitting devices 3, and the sacrificial layer 01 and the photoresist layer 02 cover the areas corresponding to the non-target color light emitting devices.

[0200] For example, the sacrificial layer 01 is recessed relative to the photoresist layer 02 at the through holes.

[0201] The colors of the plurality of light emitting devices 3 are various, and the light emitting parts 302 and the cathodes 303 corresponding to the light emitting devices 3 of different colors are separately manufactured.

[0202] For example, the light emitting devices 3 include at least a plurality of first light emitting devices 310, a plurality of second light emitting devices 320, and a plurality of third light emitting devices 330. The light emitting devices 310, 320, and 330 emit light of different colors. For example, the first light emitting devices 310 can emit red light, the second light emitting devices 320 can emit blue light, and the third light emitting devices 330 can emit green light.

[0203] For example, during the formation of the first light emitting devices 310, the sacrificial layer 01 and the photoresist layer 02 have through holes penetrating the third openings 51 corresponding to the first light emitting devices 310, and the sacrificial layer 01 and the photoresist layer 02 cover the areas corresponding to the second light emitting devices 320 and the third light emitting devices 330.

[0204] For example, the step a3 includes:

[0205] a31: As shown in FIG. 8, a light emitting material 03 required for the target color light emitting devices 3 is deposited. Part of the light emitting material 03 is deposited in the plurality of first openings 21 to form the light emitting parts 302, and another part of the light emitting material 03 is deposited on the surface of the photoresist layer 02 away from the substrate 1.

[0206] It can be understood that, as shown in FIG. 8, in the step a31, the thickness of the light emitting part 302 is small, and after the deposition of the light emitting material 03, the part of the light emitting material 03 located in the first opening 21 is disconnected from the part of the light emitting material 03 deposited on the surface of the photoresist layer 02 away from the substrate 1, thereby forming a plurality of spaced light emitting parts 302.

[0207] For example, the material of the light emitting part 302 can include an organic material.

[0208] For example, the light emitting material 03 can be deposited by an evaporation process.

[0209] a32: As shown in FIG. 8, the cathode material 04 is deposited, a part of the cathode material 04 is deposited in the first opening 21 and extends to the second opening 22 to connect with the auxiliary electrode 4, forming the cathode 303, and another part of the cathode material 04 is deposited on the side of the light-emitting material 03 on the photoresist layer 02 away from the substrate 1.

[0210] It can be understood that, as shown in FIG. 8, in the above step a32, the thickness of the cathode 303 is small, and after the cathode material 04 is deposited, the part of the cathode material 04 located in the first opening 21 is disconnected from the part of the cathode material 04 deposited on the side of the light-emitting material 03 on the photoresist layer 02 away from the substrate 1, thereby forming a plurality of cathodes 303 arranged at intervals.

[0211] For example, the cathode 303 can be made of metal material, such as indium tin oxide (ITO), magnesium-silver alloy (MgAg), silver (Ag), aluminum (Al), magnesium (Mg), etc. The embodiments of the present disclosure are not limited in this regard.

[0212] For example, the cathode 303 can be formed by sputtering or evaporation process.

[0213] It should be noted that the deposition angle when depositing the light-emitting material 03 is greater than the deposition angle when depositing the cathode material 04. For example, the deposition angle of the light-emitting material 03 is approximately 90°, for example, the deposition angle of the light-emitting material 03 can be in the range of 80°-90°. The deposition angle of the cathode material 04 is a relatively small acute angle, for example, 50°.

[0214] The deposition angle of the cathode material 04 is relatively small compared to the deposition angle of the light-emitting material 03, which can ensure that the cathode 303 formed near the edge of the isolation structure layer 5 exceeds the edge of the light-emitting part 302 near the isolation structure layer 5, and the deposition angle is controlled during the deposition of the cathode material 04, so that the cathode 303 is electrically connected with the auxiliary electrode 4, that is, the effectiveness of the electrical connection between the cathode 303 and the auxiliary electrode 4 is ensured, thereby facilitating to ensure that the light-emitting part 302 in each light-emitting device 3 can receive substantially the same electrical signal transmitted by the cathode 303, and facilitating to improve the accuracy of the electrical signal received by the plurality of light-emitting parts 302, and further facilitating to improve the display uniformity of the display panel 300.

[0215] a33: As shown in FIGS. 8 and 10, the sacrificial layer 01, the photoresist layer 02, the light-emitting material 03 on the surface of the photoresist layer 02 away from the substrate 1, and the cathode material 04 are removed by using a stripping process; the light-emitting material 03 located in the first opening 21 is retained to form the light-emitting part 302, and the cathode material 04 located in the first opening 21 and extending to the second opening 22 to connect with the auxiliary electrode 4 is retained to form the cathode 303.

[0216] Exemplarily, the display panel 300 to be peeled off can be placed into a peeling solution to remove the sacrificial layer 01, the photoresist layer 02, the light emitting material 03 and the cathode material 04 located on the surface of the photoresist layer 02 away from the substrate 1.

[0217] Thus far, the preparation of the target color light emitting device 3 is completed.

[0218] In the embodiment, the isolation structure layer 5 can be formed at one time, that is, the third openings 51 in the isolation structure layer 5 corresponding to the light emitting devices 3 of each color can be formed through the same etching process. In contrast, the third openings 51 in the isolation structure layer 5 corresponding to the light emitting devices 3 of each color are formed separately, which can save multiple masks and simplify the preparation process of the display panel 300. Moreover, in the process of forming the light emitting part 302 of the target color light emitting device 3 in the embodiment, the lift-off process is used to remove part of the light emitting layer located in the region corresponding to the light emitting device of a non-target color. This can also avoid the problem that the etching is not clean and causes film layer residues when the etching process is used to remove part of the light emitting layer located in the region corresponding to the light emitting device of a non-target color, thereby further improving the yield of the display panel 300.

[0219] In addition, in some implementations, the first openings 21 in the pixel defining layer 2 corresponding to the light emitting devices 3 of each color are formed separately, that is, after the light emitting device 3 of one color (for example, a red light emitting device) is formed, the pixel defining layer 2 is etched again to form the first openings 21 corresponding to the light emitting device 3 of another color (for example, a green light emitting device). In this process, in order to avoid damage to the already formed light emitting device 3, a low-temperature photoresist needs to be used in the process of etching the pixel defining layer 2, which can cause the slope angle of the formed first opening 21 to be large, affecting the continuity of the film layer formed in the first opening 21.

[0220] In the embodiment of the present disclosure, the first openings 21 in the pixel defining layer 2 corresponding to the light emitting devices 3 of each color can be formed through the same etching process, which not only saves multiple masks and simplifies the preparation process of the display panel 300, but also avoids the problem that the use of a low-temperature photoresist causes the slope angle of the formed first opening 21 to be large.

[0221] In some examples, between the above-mentioned steps a32 and a33, the preparation further includes:

[0222] (1) As shown in FIG. 8, a packaging film 05 is formed on the side of the deposited cathode material 04 away from the substrate 1.

[0223] Exemplarily, the material of the encapsulation film 05 can be inorganic material. In the case that the material of the encapsulation film 05 is inorganic material, the encapsulation film 05 can be formed by using a chemical vapor deposition (CVD) process.

[0224] (2) As shown in FIG. 8 and FIG. 9, the encapsulation film 05 is etched to form an encapsulation part 6; the encapsulation part 6 covers the cathode material 04 located in the first opening 21 and the second opening 22, and the sidewall of the third opening 51, and extends to the surface of the isolation structure layer 5 away from the substrate 1.

[0225] In the embodiment of the present disclosure, before the sacrificial layer 01, the photoresist layer 02, the light emitting material 03 and the cathode material 04 located on the surface of the photoresist layer 02 away from the substrate 1 are removed by using a stripping process, the encapsulation part 6 is formed, which can protect the light emitting material 03 and the cathode material 04 located in the first opening 21 and / or the second opening 22. In the process of the above step a33, a reagent without fluorine can be selected to etch and remove the sacrificial layer 01, the photoresist layer 02, the light emitting material 03 and the cathode material 04 located on the surface of the photoresist layer 02 away from the substrate 1, thereby solving the problem in the related art that a fluorine-containing solvent needs to be selected as an etching solution when etching to form the light emitting part 302 and the cathode 303, and the fluorine-containing reagent has multiple potential hazards to human body and poor environmental friendliness. In addition, it can also avoid the etching solution directly contacting the light emitting device 3, thereby causing damage to the light emitting device 3 and leading to the problem of efficiency reduction of the light emitting device 3.

[0226] Exemplarily, in the case that the light emitting device 3 at least includes a plurality of first light emitting devices 310, a plurality of second light emitting devices 320 and a plurality of third light emitting devices 330, the light emitting part 302 and the cathode 303 of the first light emitting device 310, the second light emitting device 320 and the third light emitting device 330 are separately manufactured. For example, the light emitting part 302 and the cathode 303 of the first light emitting device 310 can be formed first; then the light emitting part 302 and the cathode 303 of the second light emitting device 320 are manufactured; and finally the light emitting part 302 and the cathode 303 of the third light emitting device 330 are manufactured.

[0227] Exemplarily, in the above step a20, the target color light emitting device 3 can be the first light emitting device 310, for example.

[0228] After the first light emitting device 310 is prepared, the light emitting part 302 and the cathode 303 of the second light emitting device 320 are continuously formed. Specifically, it can include:

[0229] (1) As shown in Fig. 11, a sacrificial layer 01 and a photoresist layer 02 are formed in sequence on the side of the isolation structure layer 5 away from the substrate 1. The sacrificial layer 01 and the photoresist layer 02 have through holes penetrating the third openings 51 corresponding to the second light emitting device 320, and the sacrificial layer 01 and the photoresist layer 02 cover the areas corresponding to the first light emitting device 310 and the second light emitting device 320.

[0230] (2) As shown in Fig. 11, a light emitting material 03 required for the second light emitting device 320 is deposited. Part of the light emitting material 03 is deposited in the plurality of first openings 21 to form the light emitting part 302, and the other part of the light emitting material 03 is deposited on the surface of the photoresist layer 02 away from the substrate 1.

[0231] (3) As shown in Fig. 11, a cathode material 04 required for the second light emitting device 320 is deposited. Part of the cathode material 04 is deposited in the first openings 21 and extends into the second openings 22 to connect with the auxiliary electrode 4 to form the cathode 303, and the other part of the cathode material 04 is deposited on the side of the light emitting material 03 on the photoresist layer 02 away from the substrate 1.

[0232] (4) As shown in Fig. 11, an encapsulation film 05 is formed on the side of the deposited cathode material 04 away from the substrate 1.

[0233] (5) As shown in Fig. 11, the encapsulation film 05 is etched to form an encapsulation part 6. The encapsulation part 6 covers the cathode material 04 in the first openings 21 and the second openings 22, and the side wall of the third openings 51, and extends to the surface of the isolation structure layer 5 away from the substrate 1.

[0234] (6) As shown in Fig. 12, a stripping process is used to remove the sacrificial layer 01, the photoresist layer 02, the light emitting material 03 on the surface of the photoresist layer 02 away from the substrate 1, and the cathode material 04; the light emitting material 03 in the first openings 21 is retained to form the light emitting part 302, and the cathode material 04 in the first openings 21 and extending to the second openings 22 to connect with the auxiliary electrode 4 is retained to form the cathode 303.

[0235] Thus, the preparation of the second light emitting device 320 is completed.

[0236] After the preparation of the second light emitting device 320 is completed, the light emitting part 302 and the cathode 303 of the third light emitting device 330 are formed. Specifically, it can include:

[0237] (1) As shown in Fig. 13, a sacrificial layer 01 and a photoresist layer 02 are formed in sequence on the side of the isolation structure layer 5 away from the substrate 1. The sacrificial layer 01 and the photoresist layer 02 have through holes penetrating the third openings 51 corresponding to the third light emitting device 330, and the sacrificial layer 01 and the photoresist layer 02 cover the areas corresponding to the first light emitting device 310 and the second light emitting device 320.

[0238] (2) As shown in FIG. 13, the light emitting material 03 required for the third light emitting device 330 is deposited, and a part of the light emitting material 03 is deposited in the plurality of first openings 21 to form the light emitting part 302, and another part of the light emitting material 03 is deposited on the surface of the photoresist layer 02 away from the substrate 1.

[0239] (3) As shown in FIG. 13, the cathode material 04 required for the third light emitting device 330 is deposited, and a part of the cathode material 04 is deposited in the first openings 21 and extends into the second openings 22 to connect with the auxiliary electrode 4 to form the cathode 303, and another part of the cathode material 04 is deposited on the side of the light emitting material 03 on the photoresist layer 02 away from the substrate 1.

[0240] (4) As shown in FIG. 13, the encapsulation film 05 is formed on the side of the deposited cathode material 04 away from the substrate 1.

[0241] (5) As shown in FIG. 13, the encapsulation film 05 is etched to form the encapsulation part 6. The encapsulation part 6 covers the cathode material 04 in the first openings 21 and the second openings 22, and the side wall of the third opening 51, and extends to the surface of the isolation structure layer 5 away from the substrate 1.

[0242] (6) As shown in FIG. 14, the sacrificial layer 01, the photoresist layer 02, the light emitting material 03 on the surface of the photoresist layer 02 away from the substrate 1, and the cathode material 04 are removed by a stripping process; the light emitting material 03 in the first openings 21 is retained to form the light emitting part 302, and the cathode material 04 in the first openings 21 and extending to the second openings 22 to connect with the auxiliary electrode 4 is retained to form the cathode 303.

[0243] At this point, the preparation of the third light emitting device 330 is completed.

[0244] In some examples, as shown in FIG. 15, after the preparation of all the light emitting devices 3 is completed, the preparation method further includes: forming an encapsulation structure 7 on the side of the light emitting device 3 away from the substrate 1. The encapsulation structure 7 can include an organic encapsulation layer and an inorganic encapsulation layer which are sequentially stacked in the direction away from the substrate 1.

[0245] Exemplarily, the inorganic encapsulation layer can be formed by a chemical vapor deposition (CVD) process.

[0246] Exemplarily, the material of the organic encapsulation layer includes a polymer combination of one or more of an acrylic-based polymer, a silicon-based polymer, and an epoxy-based polymer. The material is made on the plurality of encapsulation portions 6 by Ink Jet Printing (IJP) and is subjected to ultraviolet (UV) curing to form the organic encapsulation layer.

[0247] In some embodiments, the pixel defining layer 2 is formed by:

[0248] (1) sequentially forming a first sub-defining film and a second sub-defining film on the substrate.

[0249] For example, the material of the first sub-defining film includes silicon nitride. The material of the second sub-defining film includes silicon oxide.

[0250] (2) etching the first sub-defining film and the second sub-defining film to form a first sub-defining layer 201 and a second sub-defining layer 202. The first sub-defining layer 201 has a fourth sub-opening 221, and the second sub-defining layer 202 has a fifth sub-opening 222. The fourth sub-opening 221 and the fifth sub-opening 222 are in communication to form at least part of the second opening 22. The orthogonal projection of the fifth sub-opening 222 on the substrate 1 is within the orthogonal projection of the fourth sub-opening 221 on the substrate 1.

[0251] Thus, in the pixel defining layer 2, the orthogonal projection of the fifth sub-opening 222 of the second sub-defining layer 202 on the substrate 1 is within the orthogonal projection of the fourth sub-opening 221 of the first sub-defining layer 201 on the substrate 1, so that the pixel defining layer 2 forms an undercut structure at the second opening 22, which can isolate the light emitting portion 302 of the adjacent light emitting device 3. Thus, during the manufacturing process of the light emitting portion 302 of the light emitting device 3, the light emitting layer material can be uniformly evaporated on the display panel 300 to be evaporated, and the light emitting layer material is patterned by a photolithography process, thereby forming the light emitting portion 302 of the light emitting device 3 without the need for a mask to evaporate the area where the light emitting device 3 is located to form the light emitting portion 302, thereby reducing the cumbersome FMM screen process, thereby effectively reducing the difficulty of manufacturing the display panel 300 and reducing the manufacturing cost of the display panel 300.

[0252] Exemplarily, before the step a3, the preparation method further includes:

[0253] (1) Forming a sacrificial layer 01 and a photoresist layer 02 on the side of the pixel defining layer 2 away from the substrate 1. The sacrificial layer 01 and the photoresist layer 02 have through holes corresponding to the third openings 51 of the target color light emitting device 3, and the sacrificial layer 01 and the photoresist layer 02 cover the area corresponding to the non-target color light emitting device.

[0254] Exemplarily, the step a3 comprises:

[0255] (1) Depositing a light emitting material 03 required by the target color light emitting device, part of the light emitting material 03 is deposited in the plurality of first openings 21 to form a light emitting part 302, and the other part of the light emitting material 03 is deposited on the surface of the photoresist layer 02 away from the substrate 1.

[0256] (2) Depositing a cathode material 04, part of the cathode material 04 is deposited in the first openings 21 and extends into the second openings 22 to connect with the auxiliary electrode 4 to form a cathode 303, and the other part of the cathode material 04 is deposited on the side of the light emitting material 03 on the photoresist layer 02 away from the substrate 1.

[0257] (3) Using a stripping process to remove the sacrificial layer 01, the photoresist layer 02, the light emitting material 03 on the surface of the photoresist layer 02 away from the substrate 1, and the cathode material 04; the light emitting material 03 in the first openings 21 is retained to form the light emitting part 302, and the cathode material 04 in the first openings 21 and extending to the second openings 22 to connect with the auxiliary electrode 4 is retained to form the cathode 303.

[0258] Exemplarily, between depositing the cathode material 04 and using the stripping process to remove the sacrificial layer 01, the photoresist layer 02, the light emitting material 03 on the surface of the photoresist layer 02 away from the substrate 1, and the cathode material 04, further comprising:

[0259] (1) Forming an encapsulation film 05 on the side of the deposited cathode material 04 away from the substrate 1.

[0260] (2) Etching the encapsulation film 05 to form an encapsulation part 6; the encapsulation part 6 covers the cathode material 04 in the first openings 21 and the second openings 22, and the sidewall of the second openings 22, and extends to the surface of the pixel defining layer 2 away from the substrate 1.

[0261] The above is only a specific embodiment of the present disclosure, but the protection scope of the present disclosure is not limited thereto, and any person skilled in the art can think of changes or replacements within the technical range disclosed by the present disclosure, which should be covered by the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be subject to the protection scope of the claims.

Claims

1. A display panel, comprising: a substrate; a pixel defining layer disposed on the substrate, having a first opening and a second opening, the first opening and the second opening being disposed in a spaced-apart manner; a light emitting device, at least a portion of the light emitting device being located within the first opening; the light emitting device comprising an anode, a light emitting part, and a cathode disposed in a stacked manner in a direction away from the substrate; an auxiliary electrode located between the pixel defining layer and the substrate; the auxiliary electrode overlapping the second opening in a direction perpendicular to the substrate, an edge of the cathode of the light emitting device extending into the second opening and being electrically connected with the auxiliary electrode. 2.The display panel of claim 1, further comprising: a separation structure layer disposed on a side of the pixel defining layer away from the substrate, the separation structure layer having a third opening, the first opening and the second opening being located within a range of the third opening.

3. The display panel of claim 2, wherein, a material of the separation structure layer comprising an inorganic material.

4. The display panel of claim 2 or 3, wherein, the separation structure layer comprising a first sub-separation layer and a second sub-separation layer disposed in a stacked manner in a direction away from the substrate; the first sub-separation layer having a first sub-opening, the second sub-separation layer having a second sub-opening, the first sub-opening and the second sub-opening being interpenetrating to form at least a portion of the third opening; a footprint of the second sub-opening on the substrate being located within a range of a footprint of the first sub-opening on the substrate.

5. The display panel of claim 4, wherein, the second sub-separation layer comprising a first rim surrounding the second sub-opening, the first rim extending in a direction closer to a center line of the first opening than the first sub-separation layer; a footprint of the first rim on the substrate covering a footprint of the second opening on the substrate.

6. The display panel of claim 5, wherein, a footprint of the light emitting part of the light emitting device on the substrate being located away from a footprint of the first rim on the substrate; a boundary of the footprint of the light emitting part on the substrate being in contact with a boundary of the footprint of the first rim on the substrate, or there being a gap between the boundary of the footprint of the light emitting part on the substrate and the boundary of the footprint of the first rim on the substrate.

7. The display panel of claim 5 or 6, wherein, the first rim comprising a first portion close to the light emitting device and a second portion close to the second opening; a width of the second portion being greater than a width of the first portion; the width being a dimension of the first rim in a direction from a center of the second sub-opening to a boundary.

8. The display panel according to any one of claims 4 to 7, wherein a material of the first sub-separation layer comprising silicon nitride; a material of the second sub-separation layer comprising silicon oxide. 9.The display panel of any one of claims 4-8, the separation structure layer further comprising a third sub-separation layer located on a side of the first sub-separation layer away from the second sub-separation layer; the third sub-separation layer having a third sub-opening, the first sub-opening, the second sub-opening, and the third sub-opening being interpenetrating to form the third opening; a footprint of the third sub-opening on the substrate being located within a range of a footprint of the first sub-opening on the substrate. 10.The display panel of any one of claims 2-9, further comprising: A packaging portion disposed on a side of the light emitting device distal to the substrate, the packaging portion covering the cathode of the light emitting device and a sidewall of the third opening and extending to a surface of the isolation structure layer distal to the substrate.

11. The display panel of claim 1, wherein, The pixel defining layer comprises a first sub-defining layer and the second sub-defining layer which are sequentially stacked in a direction distal to the substrate. The first sub-defining layer has a fourth sub-opening, the second sub-defining layer has a fifth sub-opening, and the fourth sub-opening and the fifth sub-opening are in communication to form at least part of the second opening. A normal projection of the fifth sub-opening on the substrate is within a range of a normal projection of the fourth sub-opening on the substrate.

12. The display panel of claim 11, wherein, The thickness of the first sub-defining layer is greater than the thickness of the second sub-defining layer. The thickness is a dimension of the first sub-defining layer or the second sub-defining layer in a direction perpendicular to the substrate.

13. The display panel of claim 11 or 12, wherein, A ratio of the thickness of the second sub-defining layer to the thickness of the first sub-defining layer is in a range of 0.3-0.

7.

14. The display panel according to any one of claims 11 to 13, wherein, Further comprising: A packaging portion disposed on a side of the light emitting device distal to the substrate, the packaging portion covering the cathode of the light emitting device, part of the packaging portion being filled in the second opening, and the packaging portion extending to a surface of the pixel defining layer distal to the substrate.

15. The display panel of any one of claim 14, wherein, In the second opening, there is a gap between an edge of the cathode and a side of the first defining layer distal to the first opening, and the packaging portion fills the gap and covers the side of the cathode.

16. The display panel according to any one of claims 11 to 15, wherein, The material of the first sub-defining layer comprises silicon nitride, and the material of the second sub-defining layer comprises silicon oxide.

17. The display panel of any of claims 10, 14-15, wherein, The number of the light emitting devices is plural, and the number of the packaging portions is plural, one packaging portion covering one light emitting device. Edges of the plural packaging portions are connected.

18. The display panel according to any one of claims 1 to 17, wherein, The auxiliary electrode is the same as and disposed in the same layer as the anode material.

19. A method for manufacturing a display panel, comprising: forming an anode and an auxiliary electrode on a substrate; forming a pixel defining layer; the pixel defining layer has a first opening and a second opening, the first opening and the second opening are disposed at intervals; the anode overlaps the first opening in a direction perpendicular to the substrate, and the auxiliary electrode overlaps the second opening in a direction perpendicular to the substrate; forming a light emitting portion and a cathode in the first opening in sequence, an edge of the cathode extending into the second opening and electrically connected to the auxiliary electrode.

20. The method of making according to claim 19, wherein, Before forming the light emitting portion and the cathode in the first opening in sequence, further comprising: forming an isolation structure layer on a side of the pixel defining layer distal to the substrate, the isolation structure layer has a third opening, the first opening and the second opening are within a range of the third opening; forming a sacrificial layer and a photoresist layer in sequence on a side of the isolation structure layer distal to the substrate, the sacrificial layer and the photoresist layer have a through hole in communication with a third opening corresponding to a target color light emitting device, and the sacrificial layer and the photoresist layer cover an area corresponding to a non-target color light emitting device; the forming the light emitting portion and the cathode in the first opening in sequence comprises: depositing a light emitting material required for the target color light emitting device, a part of the light emitting material being deposited in the plurality of first openings to form a light emitting part, and another part of the light emitting material being deposited on a surface of the photoresist layer away from the substrate; depositing a cathode material, a part of the cathode material being deposited in the first openings and extending to the second openings to connect with the auxiliary electrode to form a cathode, and another part of the cathode material being deposited on a side of the light emitting material on the photoresist layer away from the substrate; removing the sacrificial layer, the photoresist layer, the light emitting material on the surface of the photoresist layer away from the substrate, and the cathode material by using a lift-off process; the light emitting material in the first openings is reserved to form the light emitting part, and the cathode material in the first openings and extending to the second openings to connect with the auxiliary electrode is reserved to form the cathode; between the depositing of the cathode material and the removing of the sacrificial layer, the photoresist layer, the light emitting material on the surface of the photoresist layer away from the substrate, and the cathode material by using the lift-off process, further comprising: forming an encapsulating film on a side of the deposited cathode material away from the substrate; etching the encapsulating film to form an encapsulating part; the encapsulating part covers the cathode material in the first openings and the second openings, and the sidewall of the third opening, and extends to a surface of the isolation structure layer away from the substrate.

21. The method of making according to claim 19, wherein, the forming of the pixel defining layer comprises: forming a first sub-defining film and a second sub-defining film on the substrate in sequence; etching the first sub-defining film and the second sub-defining film to form a first sub-defining layer and a second sub-defining layer; the first sub-defining layer has a fourth sub-opening, the second sub-defining layer has a fifth sub-opening, the fourth sub-opening and the fifth sub-opening are through to form at least part of the second opening; the orthographic projection of the fifth sub-opening on the substrate is within the orthographic projection of the fourth sub-opening on the substrate; before the forming of the light emitting part and the cathode in the first openings in sequence, further comprising: forming a sacrificial layer and a photoresist layer on a side of the pixel defining layer away from the substrate in sequence; the sacrificial layer and the photoresist layer have through holes through the third openings corresponding to the target color light emitting device, and the sacrificial layer and the photoresist layer cover the areas corresponding to the non-target color light emitting device; the forming of the light emitting part and the cathode in the first openings in sequence comprises: depositing a light emitting material required for the target color light emitting device, a part of the light emitting material being deposited in the plurality of first openings to form a light emitting part, and another part of the light emitting material being deposited on a surface of the photoresist layer away from the substrate; depositing a cathode material, a part of the cathode material being deposited in the first openings and extending to the second openings to connect with the auxiliary electrode to form a cathode, and another part of the cathode material being deposited on a side of the light emitting material on the photoresist layer away from the substrate; The sacrificial layer, the photoresist layer, the light emitting material and the cathode material on the surface of the photoresist layer away from the substrate are removed by using a stripping process; the light emitting material in the first opening is reserved to form a light emitting part, and the cathode material in the first opening and extending to the second opening to connect with the auxiliary electrode is reserved to form a cathode; Between the deposition of the cathode material and the removal of the stripping layer, the photoresist layer, the light emitting material and the cathode material on the surface of the photoresist layer away from the substrate by using the stripping process, further comprising: A packaging film is formed on the side of the deposited cathode material away from the substrate; The packaging film is etched to form a packaging part; the packaging part covers the cathode material in the first opening and the second opening, the sidewall of the second opening, and extends to the surface of the pixel defining layer away from the substrate.

22. A display device, comprising: The display panel according to any one of claims 1-18; A circuit board electrically connected with the display panel.

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