Detection device

Abstract

Provided is a detection device capable of optimizing the distance between a photodiode and a light source and reducing the size of a housing. A detection device 1 includes: a light source 60; a sensor structure 22 provided in an area centered on a position where the light source 60 is provided, within the same plane; and a housing 200 surrounding a sensor area AA in which the sensor structure 22 is provided.

Description

Detection device

[0001] The present invention relates to a detection device.

[0002] Devices for detecting information related to a living body from a human body are known. Patent Document 1 discloses a biometric sensor having a ring structure capable of measuring a pulse wave without restricting the behavior of a subject.

[0003] Japanese Patent Application Laid-Open No. 2012-065900

[0004] As the structure of the biometric sensor, in addition to an annular form such as a ring, a structure in which an optical sensor is provided inside a patch-shaped housing attached to the body surface of a subject using an adhesive is assumed. In such a mode, optimization of the distance between the photodiode and the light source and miniaturization of the housing become issues.

[0005] An object of the present disclosure is to provide a detection device capable of optimizing the distance between a photodiode and a light source and miniaturizing the housing.

[0006] A detection device according to one aspect of the present disclosure includes a light source, a sensor structure provided in a region centered on a position where the light source is provided in the same plane, and a housing surrounding the periphery of the sensor region where the sensor structure is provided.

[0007] Figure 1A is a longitudinal cross-sectional view showing an example of a schematic configuration of the detection device according to the embodiment. Figure 1B is a bottom perspective view of the detection device according to the embodiment, viewed from the Dz direction. Figure 2 is a schematic partial cross-sectional view of the optical sensor. Figure 3 is a diagram showing an example of the block configuration of the detection device according to the embodiment. Figure 4 is a plan view of the optical sensor module according to the embodiment, viewed from the Dz direction. Figure 5 is a circuit diagram of the optical sensor according to the embodiment. Figure 6 is a timing waveform diagram showing an example of operation of the detection device according to the embodiment during one frame period. Figure 7 is a circuit diagram showing the sensor detection area. Figure 8 is a plan view of the optical sensor module according to the first modified example, viewed from the Dz direction. Figure 9 is a plan view of the optical sensor module according to the second modified example, viewed from the Dz direction. Figure 10 is a plan view of the optical sensor module according to the third modified example, viewed from the Dz direction. Figure 11 is a plan view of the optical sensor module according to the fourth modified example, viewed from the Dz direction. Figure 12 is a plan view of the optical sensor module according to the fifth modified example, viewed from the Dz direction.

[0008] Embodiments for carrying out the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the embodiments described below. Furthermore, the components described below include those that are easily conceivable to those skilled in the art, and those that are substantially the same. Moreover, the components described below can be combined as appropriate. Furthermore, the disclosure is merely an example, and any modifications that can be easily conceived by those skilled in the art while maintaining the spirit of the invention are naturally included within the scope of the present invention. In addition, the drawings may schematically represent the width, thickness, shape, etc., of each part compared to the actual embodiment in order to clarify the explanation, but these are merely examples and do not limit the interpretation of the present invention. Furthermore, in this specification and in each drawing, elements similar to those described above with respect to previously shown drawings are denoted by the same reference numerals, and detailed explanations may be omitted as appropriate.

[0009] In this disclosure, when describing a manner in which one structure is placed on top of another structure, unless otherwise specified, the term "on top of" includes both cases: when one structure is placed directly on top of another structure so as to be in contact with it, and when another structure is placed above another structure via yet another structure.

[0010] Figure 1A is a longitudinal cross-sectional view showing an example of a schematic configuration of the detection device according to the embodiment. Figure 1B is a bottom perspective view of the detection device according to the embodiment, viewed from the Dz direction. In this disclosure, the detection device 100 is assumed to have a patch-shaped structure that is attached to the body surface of a subject.

[0011] In this disclosure, information relating to a living organism includes, for example, pulse waves and blood oxygen saturation (SpO2). ２ The present invention is not limited by the mounting location of the detection device 100.

[0012] As shown in Figure 1A, the detection device 100 comprises a housing 200 and an optical sensor module 120. The optical sensor module 120 comprises a rigid substrate 70 on which a light source 60 and a control circuit 122 are provided, and an optical sensor 1.

[0013] In the example shown in Figure 1A, the detection device 100 is formed by filling a housing 200 with a filling member 81 while a light sensor module 120 is housed inside. The filling member 81 is a translucent resin. The detection device 100 is attached to a target body, such as the arm or back of the hand of a subject, using an adhesive 82, and acquires vital data, which is information about the body. The adhesive 82 is, for example, a medical-grade acrylic or silicone-based translucent adhesive. This allows the light emitted by the light source 60 to be irradiated onto the target body, and the light from the target body to be received by the light sensor 1.

[0014] Figure 2 is a schematic partial cross-sectional view of the optical sensor. The optical sensor 1 includes a flexible substrate 21, a sensor structure 22 formed on the flexible substrate 21, and a protective film 23 covering the sensor structure 22.

[0015] The sensor structure 22 includes a TFT (Thin Film Transistor) layer 221, an anode electrode (lower electrode) 222, a photodiode PD, and a cathode electrode (upper electrode) 226. In this disclosure, the photodiode PD is an organic photodiode (OPD).

[0016] The TFT layer 221 is provided with various wirings such as switching elements Tr, drive signal lines GCL, and detection signal lines SGL (see Figure 6).

[0017] The photodiode PD comprises an active layer 224, an electron transport layer (lower buffer layer) 223 provided between the active layer 224 and the anode electrode (lower electrode) 222, and a hole transport layer (upper buffer layer) 225 provided between the active layer 224 and the cathode electrode (upper electrode) 226. In other words, the electron transport layer (lower buffer layer) 223, the active layer 224, and the hole transport layer (upper buffer layer) 225 of the photodiode PD are stacked in this order in a direction perpendicular to the flexible substrate 21.

[0018] The active layer 224 changes its properties (e.g., voltage-current characteristics and resistance) depending on the light it is irradiated with. Organic materials are used as the material for the active layer 224. Specifically, the active layer 224 is a bulk heterostructure in which a p-type organic semiconductor and an n-type organic semiconductor, an n-type fullerene derivative (PCBM), are mixed. For example, C13 is a low-molecular-weight organic material used as the active layer 224. ６０ (Fullerene), PCBM (Phenyl C61-butyric acid methyl ester), CuPc (Copper Phthalocyanine), F １６ CuPc (fluorinated copper phthalocyanine), rubrene (5,6,11,12-tetraphenyltetracene), PDI (perylene derivative), etc. can be used.

[0019] The active layer 224 can be formed by vapor deposition (Dry Process) using these low-molecular-weight organic materials. In this case, the active layer 224 can be, for example, CuPc and F１６ A multilayer film with CuPc, or rubrene and C ６０ It may be a laminated film. The active layer 224 can also be formed by a wet process. In this case, the active layer 224 is made of a material that combines the low molecular weight organic material and the polymer organic material described above. As the polymer organic material, for example, P3HT (poly(3-hexylthiophene)), F8BT (F8-alt-benzothiadiazole), etc. can be used. The active layer 224 can be a film in which P3HT and PCBM are mixed, or a film in which F8BT and PDI are mixed.

[0020] The electron transport layer (lower buffer layer) 223 and the hole transport layer (upper buffer layer) 225 are provided to facilitate the arrival of electrons and holes generated in the active layer 224 at the anode electrode (lower electrode) 222 or the cathode electrode (upper electrode) 226. The electron transport layer (lower buffer layer) 223 is in direct contact with the anode electrode (lower electrode) 222. The active layer 224 is in direct contact with the electron transport layer (lower buffer layer) 223. The material used for the electron transport layer (lower buffer layer) 223 is ethoxylated polyethyleneimine (PEIE).

[0021] The hole transport layer (upper buffer layer) 225 is in direct contact with the active layer 224, and the cathode electrode (upper electrode) 226 is in direct contact with the hole transport layer (upper buffer layer) 225. The hole transport layer (upper buffer layer) 225 is a metal oxide layer. As the metal oxide layer, tungsten oxide (WO ３ ), molybdenum oxide, etc. are used.

[0022] Note that the materials and manufacturing methods for the electron transport layer (lower buffer layer) 223, the active layer 224, and the hole transport layer (upper buffer layer) 225 are merely examples, and other materials and manufacturing methods may be used.

[0023] The anode electrode (lower electrode) 222 and the cathode electrode (upper electrode) 226 face each other with the photodiode PD in between. The cathode electrode (upper electrode) 226 is made of a transparent conductive material such as ITO (Indium Tin Oxide). The anode electrode (lower electrode) 222 is made of a metallic material such as silver (Ag) or aluminum (Al). Alternatively, the anode electrode (lower electrode) 222 may be made of an alloy material containing at least one of these metallic materials.

[0024] By controlling the film thickness of the anode electrode (lower electrode) 222, the anode electrode (lower electrode) 222 can be formed as a translucent semi-transparent electrode. For example, by forming the anode electrode (lower electrode) 222 with a thin Ag film with a film thickness of 10 nm, it has a translucency of about 60%. In this case, the photodiode PD can detect the first light LD irradiated from, for example, the first surface FD side.

[0025] The protective film 23 is provided on the second surface FU, covering the cathode electrode (upper electrode) 226. The protective film 23 is a passivation film and is provided to protect the photodiode PD.

[0026] The above-described configuration of the photodiode PD and the irradiation direction of the first light LD are merely examples. For example, the photodiode PD may have an active layer 224, a hole transport layer (lower buffer layer) 223 provided between the active layer 224 and the cathode electrode (lower electrode) 222, and an electron transport layer (upper buffer layer) 225 provided between the active layer 224 and the anode electrode (upper electrode) 226. The hole transport layer (lower buffer layer) 223, the active layer 224, and the electron transport layer (upper buffer layer) 225 of the photodiode PD may be stacked in this order in a direction perpendicular to the sensor substrate 21. In this case, the photodiode PD can detect the first light LD irradiated from, for example, the second surface FU side.

[0027] The light sensor module 120 operates using power supplied from the battery 128 (see Figure 1A). The battery 128 is a secondary battery, such as a lithium-ion battery, and is charged by power received from an external electromagnetic means via a wireless charging antenna 127, such as a coil formed by winding a conductive material. The battery 128 is not limited to a secondary battery and may be a primary battery, such as a silver oxide battery or a lithium primary battery.

[0028] The light source 60 is mounted on the first surface 70A of the rigid substrate 70. In this disclosure, the light source 60 is, for example, an inorganic LED (Light Emitting Diode) or an organic EL (OLED: Organic Light Emitting Diode). The light source 60 may also have a plurality of light sources capable of emitting near-infrared light, red light, and green light.

[0029] The control circuit 122 is mounted on the second surface 70B of the rigid substrate 70. The control circuit 122 is, for example, an FPGA (Field Programmable Gate Array). In this disclosure, the control circuit 122 is a component that controls the light source 60 and the sensor structure 22 of the light sensor 1 to perform processing for acquiring vital data of the object to be detected. The control circuit 122 is not limited to being composed of a single FPGA, but may be composed of multiple FPGAs, each having a different role (for example, an FPGA for light emission control, an FPGA for detection control, and an FPGA for charge control).

[0030] The flexible substrate 21 is placed on top of the first surface 70A of the rigid substrate 70. The control circuit 122 and the sensor structure 22 are electrically connected via terminals 71 provided between the flexible substrate 21 and the rigid substrate 70 (see Figure 1B). The electrical connection between the flexible substrate 21 and the rigid substrate 70 may be, for example, an anisotropic conductive film (ACF), or the connection terminals of the flexible substrate 21 and the connection terminals of the rigid substrate 70 may be soldered together for electrical connection.

[0031] In the above configuration, the sensor structure 22 of the optical sensor 1 is provided within the area enclosed by the housing 200 when the detection device 100 is viewed from the Dz direction. In this disclosure, as shown in Figure 1B, the area in which the sensor structure 22 of the optical sensor 1 is provided is defined as "sensor area AA".

[0032] Light from the light source 60 is irradiated onto the object to be detected via the light irradiation section 60R (see Figure 1A). The light irradiation section 60R is a translucent convex lens. The light irradiation section 60R may also be formed by, for example, a filling member 81.

[0033] Light emitted from the light source 60 is reflected from the surface or inside the object to be detected and incident on the light sensor 1. This allows the detection device 100 to acquire vital data of the object to be detected.

[0034] Figure 3 shows an example of the block configuration of a detection device according to an embodiment. In this disclosure, the control circuit 122 includes the detection control circuit 11, drive circuit 15, selection circuit 16, and detection circuit 40 shown in Figure 3.

[0035] Sensor region AA has multiple photodiodes PD. The photodiodes PD in sensor region AA output a detection signal Vdet corresponding to the irradiated light to the selection circuit 16. Sensor region AA also performs detection according to the drive signal Vgcl supplied from the drive circuit 15.

[0036] The detection control circuit 11 is a circuit that supplies control signals to the drive circuit 15, the selection circuit 16, and the detection circuit 40, respectively, and controls their operation. The detection control circuit 11 supplies various control signals such as the start signal STV, the clock signal CK, and the reset signal RST1 to the drive circuit 15. The detection control circuit 11 also supplies the selection signal ASW to the selection circuit 16. Furthermore, the detection control circuit 11 supplies various control signals to the light source 60 to control its illumination and de-illumination.

[0037] The drive circuit 15 supplies a drive signal Vgcl to the drive signal line GCL (see Figure 5) selected based on various control signals. This allows the drive circuit 15 to drive multiple photodiodes PD connected to the drive signal line GCL.

[0038] The selection circuit 16 is a switch circuit such as a multiplexer. The selection circuit 16 connects the detection signal line SGL (see FIG. 5) selected based on the selection signal ASW to the detection circuit 40. Thereby, the selection circuit 16 outputs the detection signal Vdet of the photodiode PD connected to the detection circuit 40 to the detection circuit 40.

[0039] The detection circuit 40 includes a detection signal amplification circuit 42, an A / D conversion circuit 43, a signal processing circuit 44, a memory circuit 46, and a detection timing control circuit 47. The detection timing control circuit 47 controls each component constituting the detection circuit 40 to operate synchronously based on the control signal supplied from the detection control circuit 11.

[0040] The detection signal amplification circuit 42 amplifies the detection signal Vdet. The A / D conversion circuit 43 converts the analog signal output from the detection signal amplification circuit 42 into a digital signal at a predetermined sampling period.

[0041] The signal processing circuit 44 acquires vital data of the detected object based on the detection value of the photodiode PD output from the A / D conversion circuit 43.

[0042] The memory circuit 46 temporarily stores the signal processed by the signal processing circuit 44. The memory circuit 46 may be in a form including, for example, a RAM (Random Access Memory), a ROM (Read Only Memory), an EEPROM (Electrically Erasable Programmable Read Only Memory), etc. Also, the memory circuit 46 may be a register circuit or the like.

[0043] Next, the optical sensor module 120 according to the embodiment will be described. FIG. 4 is a plan view of the optical sensor module according to the embodiment as viewed from the Dz direction.

[0044] In the optical sensor module 120 according to the embodiment, the outer shape of the flexible substrate 21 as viewed from the Dz direction is circular. In the aspect shown in FIG. 4, the outer shape of the sensor region AA is circular, and the sensor structure 22 is divided into a plurality of partial regions PAA in the circumferential direction (the circumferential direction of the sensor region AA shown in FIG. 4) and the radial direction (the radial direction of the sensor region AA shown in FIG. 4) centered on the position where the light source 60 is provided in the same plane.

[0045] In FIG. 4, the sensor structures corresponding to the respective partial regions PAA are shown by hatching. The sensor structure includes one photodiode PD corresponding to each of the plurality of partial regions PAA.

[0046] FIG. 5 is a schematic diagram showing a wiring example of the sensor region according to the embodiment.

[0047] As shown in FIG. 5, drive signal lines GCL common to a plurality of partial regions PAA arranged in the circumferential direction are connected. The plurality of drive signal lines GCL are each connected to the drive circuit 15.

[0048] Also, as shown in FIG. 5, detection signal lines SGL common to a plurality of partial regions PAA arranged in the radial direction are connected. The plurality of detection signal lines SGL are each connected to the selection circuit 16 and the reset circuit 17.

[0049] The drive circuit 15 receives various control signals such as a start signal STV, a clock signal CK, and a reset signal RST1 from the control circuit 122 (see FIG. 1). Based on the various control signals, the drive circuit 15 simultaneously selects the partial regions PAA arranged in the circumferential direction and sequentially selects the partial regions PAA arranged in the radial direction.

[0050] The drive circuit 15 supplies a drive signal Vgcl to the simultaneously selected partial regions PAA in the sensor region AA via the drive signal lines GCL.

[0051] FIG. 6 is a circuit diagram showing the connection configuration between the sensor region and the detection circuit. FIG. 6 illustrates the circuit configuration of the sensor structure corresponding to one partial region PAA.

[0052] As shown in Figure 6, the circuit of the sensor structure corresponding to each sub-region PAA includes a photodiode PD, a capacitive element Ca, and a switching element Tr. The switching element Tr is composed of a thin-film transistor provided on the TFT layer 221 (see Figure 2), and in this example, it is composed of an n-channel MOS (Metal Oxide Semiconductor) type TFT.

[0053] The gate of the switching element Tr is connected to the drive signal line GCL. The source of the switching element Tr is connected to the detection signal line SGL. The drain of the switching element Tr is connected to the cathode of the photodiode PD and the capacitive element Ca.

[0054] The anode of the photodiode PD is supplied with the sensor power supply signal VDDSNS. In addition, the detection signal line SGL and the capacitive element Ca are supplied with a reference signal COM, which is the initial potential of the detection signal line SGL and the capacitive element Ca.

[0055] Specifically, the control circuit 122 supplies a reset signal RST2 to the reset circuit 17. This turns on multiple switching elements TrR, and a reference signal COM is supplied to each sub-region PAA.

[0056] When light is shone on the sensor structure of each sub-region PAA, a current corresponding to the amount of light flows through the photodiode PD, causing charge to accumulate in the capacitive element Ca. When the switching element Tr is turned on, a current flows through the signal line SGL according to the charge accumulated in the capacitive element Ca. The signal line SGL is connected to the detection circuit 40 via the switching element TrS of the selection circuit 16. As a result, the detection device 100 can acquire a detection value corresponding to the amount of light shone on the photodiode PD for each sub-region PAA.

[0057] The detection circuit 40 is connected to the signal line SGL when the switch SSW is turned on during the readout period Pdet (see Figure 7). The detection signal amplification circuit 42 converts the current supplied from the detection signal line SGL into a voltage corresponding to its value and amplifies it. A reference potential (Vref) with a fixed potential is input to the non-inverting input (+) of the detection signal amplification circuit 42, and the signal line SGL is connected to the inverting input terminal (-). In this embodiment, the same signal as the reference signal COM is input as the reference potential (Vref) voltage. The detection signal amplification circuit 42 also has a capacitive element Cb and a reset switch RSW. During the reset period Prst (see Figure 7), the reset switch RSW is turned on and the charge of the capacitive element Cb is reset.

[0058] Next, an example of the operation of the detection device 100 will be described. Figure 7 is a timing waveform diagram showing an example of the operation of the detection device according to the embodiment during one frame period. In Figure 7, M is an example of the number of columns in which the partial regions PAA are arranged radially in the sensor region AA, and N is an example of the number of rows in which the partial regions PAA are arranged circumferentially in the sensor region AA.

[0059] As shown in Figure 7, the detection device 100 has a reset period Prst, an exposure period Pex, and a readout period Pdet.

[0060] During the reset period Prst, the drive circuit 15 sequentially sets the drive signal Vgcl supplied to the drive signal line GCL to a high-level voltage. As a result, the switching elements Tr of the radially aligned partial region PAA conduct sequentially, and a reference signal COM is supplied to the photodiode PD. Consequently, the charge accumulated in the capacitance of the capacitive element Ca is reset.

[0061] Examples of exposure timing include an exposure control method when the drive signal line is not selected and a continuous exposure control method.

[0062] In the exposure control method when the drive signal line is not selected, drive signals {Vgcl(1) to (N)} are sequentially supplied to all drive signal lines GCL connected to each photodiode PD, and all photodiodes PD are reset. Subsequently, when all drive signal lines GCL connected to each photodiode PD reach a low voltage (switching element Tr is off), exposure begins, and exposure is performed during the exposure period Pex. When exposure is completed, drive signals {Vgcl(1) to (N)} are sequentially supplied to the drive signal lines GCL connected to each photodiode PD, and readout is performed during the readout period Pdet.

[0063] In the continuous exposure control method, it is also possible to control exposure during the reset period Prst and the readout period Pdet (continuous exposure control). In this case, the exposure period Pex(1) starts after the drive signal Vgcl(1) is supplied to the drive signal line GCL during the reset period Prst. Here, the exposure period Pex{(1)...(M)} is the actual exposure period and is defined as the period during which the photodiode PD charges the capacitive element Ca, and does not include the period during which light is irradiated outside of this period. During the reset period Prst, the charge charged in the capacitive element Ca flows in the photodiode PD as a reverse current (from cathode to anode) due to light irradiation, and the potential difference across the capacitive element Ca decreases.

[0064] Note that the effective exposure periods Pex(1), ..., Pex(M) in the subregion PAA corresponding to each drive signal line GCL have different start and end timings. Each exposure period Pex(1), ..., Pex(N) starts when the drive signal Vgcl transitions from a high-level voltage to a low-level voltage during the reset period Prst. Each exposure period Pex(1), ..., Pex(N) ends when the drive signal Vgcl transitions from a low-level voltage to a high-level voltage during the readout period Pdet. The exposure time for each exposure period Pex(1), ..., Pex(N) is equal.

[0065] During the exposure period Pex, a current flows through the photodiode PD in accordance with the light irradiated upon it, and charge accumulates in each capacitive element Ca.

[0066] The control circuit 122 lowers the reset signal RST2 to a low level voltage before the readout period Pdet begins. This stops the supply of the reference signal COM to the partial region PAA.

[0067] During the readout period Pdet, the drive circuit 15, similar to the reset period Prst, sequentially sets the drive signal Vgcl supplied to the drive signal line GCL to a high-level voltage. As a result, the switching elements Tr of the radially aligned partial regions PAA conduct sequentially, and a detection signal Vdet for each partial region PAA is supplied to the detection circuit 40 via the selection circuit 16.

[0068] In this embodiment, the sensor structure 22 includes multiple sub-regions PAA divided in the circumferential direction (circumferential direction of the sensor region AA shown in Figure 4) and radial direction (radial direction of the sensor region AA shown in Figure 4) with respect to the position where the light source 60 is provided within the same plane, and vital data is acquired based on the detection values ​​obtained for each of the multiple sub-regions PAA. This improves the light utilization efficiency of the photodiode PD of the sensor structure corresponding to each sub-region PAA, and enables miniaturization of the detection device 100.

[0069] In the embodiment, an example was given in which the external shape of the flexible substrate 21 and the external shape of the sensor area AA as viewed from the Dz direction are circular, but the embodiment is not limited thereto. Also, an example was given in which the sensor structure 22 is divided into a plurality of sub-regions PAA, but the embodiment is not limited thereto. Below, modifications of the external shape of the flexible substrate 21 and the form of the sensor area AA will be described. In the following description, the description of components that are the same as those in the optical sensor module according to the embodiment may be omitted.

[0070] (First Modified Example) Figure 8 is a plan view of the optical sensor module according to the first modified example, as seen from the Dz direction.

[0071] In the first modified optical sensor module 120a, the external shape of the flexible substrate 21 as viewed from the Dz direction is rectangular (more specifically, square). In the embodiment shown in Figure 8, the external shape of the sensor region AA is circular, similar to the embodiment shown in Figure 4, and includes a plurality of sub-regions PAA in which the sensor structure 22 is divided in the circumferential direction (circumferential direction of the sensor region AA shown in Figure 8) and radial direction (radial direction of the sensor region AA shown in Figure 8) with respect to the position where the light source 60 is provided within the same plane.

[0072] In Figure 8, the sensor structures corresponding to each subregion PAA are shown by hatching. Each sensor structure contains one photodiode PD corresponding to one of the multiple subregion PAAs.

[0073] (Second Modification) Figure 9 is a plan view of the optical sensor module according to the second modification, as seen from the Dz direction.

[0074] In the second modified optical sensor module 120b, the external shape of the flexible substrate 21 as viewed from the Dz direction is a rectangle (more specifically, a square) similar to the first modified example shown in Figure 8. In the embodiment shown in Figure 9, the external shape of the sensor area AA is a rectangle (more specifically, a square), and within the same plane, the sensor structure 22 is divided in the circumferential direction (outer peripheral direction of the sensor area AA shown in Figure 9) and the radial direction (radial direction from the center position of the sensor area AA shown in Figure 9 toward the outer periphery) with respect to the position where the light source 60 is provided.

[0075] In Figure 9, the sensor structures corresponding to each subregion PAA are shown by hatching. Each sensor structure contains one photodiode PD corresponding to one of the multiple subregion PAAs.

[0076] (Third Modification) Figure 10 is a plan view of the optical sensor module according to the third modification, as seen from the Dz direction.

[0077] In the optical sensor module 120c according to the third modified example, the external shape of the flexible substrate 21 as viewed from the Dz direction is circular, similar to the first modified example. In the embodiment shown in Figure 10, the external shape of the sensor region AA is circular and has a single sensor structure (photodiode PD) indicated by hatching in Figure 10.

[0078] (Fourth Modification) Figure 11 is a plan view of the optical sensor module according to the fourth modification, as seen from the Dz direction.

[0079] In the optical sensor module 120d according to the fourth modified example, the external shape of the flexible substrate 21 as viewed from the Dz direction is a rectangle (more specifically, a square) similar to the third modified example shown in Figure 10. In the embodiment shown in Figure 11, the external shape of the sensor area AA is circular, similar to the third modified example shown in Figure 3, and has a single sensor structure (photodiode PD) indicated by hatching in Figure 11.

[0080] (Fifth Modification) Figure 12 is a plan view of the optical sensor module according to the fifth modification, as seen from the Dz direction.

[0081] In the fifth modified optical sensor module 120e, the external shape of the flexible substrate 21 as viewed from the Dz direction is a rectangle (more specifically, a square) similar to the fourth modified example shown in Figure 11. In the embodiment shown in Figure 12, the external shape of the sensor area AA is a rectangle (more specifically, a square), and it has a single sensor structure (photodiode PD) shown by hatching in Figure 11.

[0082] The external shape of the flexible substrate 21 and the form of the sensor area AA are not limited to the embodiments and modifications. Specifically, the external shape of the flexible substrate 21 may be a shape that combines straight and curved parts, such as a rounded rectangle or an oval, or an oval or egg shape, or a triangle or a polygon with pentagons or more. Similarly, the sensor area AA may be a shape that combines straight and curved parts, such as a rounded rectangle or an oval, or an oval or egg shape, or a triangle or a polygon with pentagons or more. Furthermore, the external shape of the flexible substrate 21 and the external shape of the sensor area AA may be different shapes, as in the first and fourth modifications.

[0083] Although preferred embodiments of the present invention have been described above, the present invention is not limited to these embodiments. The contents disclosed in the embodiments are merely examples, and various modifications are possible without departing from the spirit of the present invention. Appropriate modifications made without departing from the spirit of the present invention naturally fall within the technical scope of the present invention. At least one of various omissions, substitutions, and modifications of components can be made without departing from the gist of each of the embodiments and modifications described above.

[0084] 1 Optical sensor 21 Flexible substrate 22 Sensor structure 23 Protective film 40 Detection circuit 60 Light source 60R Light irradiation section 70 Rigid substrate 71 Terminal section 100 Detection device 120, 120a, 120b, 120c, 120d, 120e Optical sensor module 122 Control circuit 127 Battery charging coil 128 Battery 200 Housing AA Sensor area GCL Drive signal line PAA Partial area SGL Detection signal line

Claims

1. A detection device comprising: a light source; a sensor structure provided in a region centered on the position where the light source is provided within the same plane; and a housing surrounding the sensor region where the sensor structure is provided.

2. The detection device according to claim 1, comprising: a control circuit for controlling the light source and the sensor structure; a rigid substrate on which the light source and the control circuit are provided; and a flexible substrate on which the sensor structure is provided.

3. The detection device according to claim 2, wherein the light source is mounted on the first surface of the rigid substrate, the control circuit is mounted on the second surface on the back of the first surface of the rigid substrate, and the flexible substrate is arranged on top of the first surface of the rigid substrate.

4. The detection device according to claim 3, wherein the control circuit and the sensor structure are electrically connected via a terminal portion provided between the flexible substrate and the rigid substrate.

5. The detection device according to claim 2, wherein the external shape of the flexible substrate includes at least a curved portion.

6. The detection device according to claim 2, wherein the external shape of the flexible substrate includes at least a straight section.

7. The detection device according to claim 2, wherein the external shape of the flexible substrate is circular.

8. The detection device according to claim 2, wherein the external shape of the flexible substrate is rectangular.

9. The detection device according to claim 1, wherein the sensor structure includes a TFT layer and a photodiode.

10. The detection device according to claim 9, wherein the sensor region includes a plurality of subregions into which the sensor structure is divided in the circumferential and radial directions, and the sensor structure includes one photodiode corresponding to each of the plurality of subregions.

11. The detection device according to claim 10, wherein a common drive signal line is connected to a plurality of sub-regions arranged in the circumferential direction, and a common detection signal line is connected to a plurality of sub-regions arranged in the radial direction.

12. The detection device according to any one of claims 1 to 11, wherein the external shape of the sensor area includes at least a curved portion.

13. The detection device according to any one of claims 1 to 11, wherein the external shape of the sensor area includes at least a straight section.

14. The detection device according to any one of claims 1 to 11, wherein the external shape of the sensor area is circular.

15. The detection device according to any one of claims 1 to 11, wherein the external shape of the sensor area is rectangular.

16. The detection device according to any one of claims 9 to 11, wherein the photodiode is an OPD.

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