Chuck structure and semiconductor test method using same

Abstract

The present technology relates to a chuck structure and a semiconductor test method using same. The chuck structure according to the present technology may comprise: a film on which a plurality of dies are disposed; and a chuck having the film disposed on one surface thereof and a plurality of grooves for adsorbing the film, the grooves being formed in the one surface.

Description

Chuck structure and semiconductor testing method using the same

[0001] The present invention relates to a chuck structure and a semiconductor testing method using the same.

[0002] Conventional die separation technology uses a lower module called an ejector or pusher to detach the die adhered to the film. This module operates by pushing the die upward from below, thereby weakening the adhesion by reducing the contact area between the film and the die.

[0003] However, these existing methods have several limitations. First, since the ejector must move across the entire wafer area, a separate axis is required, occupying a large space. Second, as pushing up a die can affect the position of adjacent dies, it is essential to verify the die's position every time. Third, there is a problem in that accurate recognition is difficult because the vision system's focal length changes if the die height changes.

[0004] An embodiment of the present invention provides a chuck structure capable of weakening the adhesion of a film while maintaining the flatness of a die, and a semiconductor testing method using the same.

[0005] A chuck structure according to an embodiment of the present invention may include a film on which a plurality of dies are arranged, and a chuck having the film arranged on one surface and a plurality of grooves formed on the one surface for adsorbing the film.

[0006] A semiconductor test method using a chuck structure according to an embodiment of the present invention may include the steps of placing a plurality of dies on a film disposed on one surface of the chuck, converting a plurality of grooves formed on one surface of the chuck into a vacuum state, and separating the plurality of dies from the film.

[0007] According to the present invention, a chuck structure capable of weakening the adhesion of a film while maintaining the flatness of a die and a semiconductor testing method using the same are provided.

[0008] FIG. 1 is a drawing for explaining an example of a chuck structure according to an embodiment of the present invention.

[0009] FIG. 2 is a plan view of a chuck according to one embodiment of the present invention.

[0010] FIG. 3 is a drawing for explaining an example in which a plurality of dies are arranged in a chuck structure according to one embodiment of the present invention.

[0011] FIG. 4 is a drawing for explaining an example of adsorbing a film according to one embodiment of the present invention.

[0012] FIGS. 5a to 5c are drawings for illustrating an example of separating a plurality of dies from a film according to one embodiment of the present invention.

[0013] FIG. 6 is a drawing for explaining an example of a semiconductor test method using a chuck structure according to an embodiment of the present invention.

[0014] FIGS. 7a and 7b are drawings for illustrating other examples of a chuck structure according to one embodiment of the present invention.

[0015] FIG. 8 is a drawing for explaining another example of a semiconductor test method using a chuck structure according to one embodiment of the present invention.

[0016] FIG. 9 is a drawing for explaining a semiconductor test device according to one embodiment of the present invention.

[0017] Specific structural or functional descriptions regarding embodiments according to the concept of the present invention disclosed in this specification or application are provided merely for the purpose of explaining embodiments according to the concept of the present invention, and embodiments according to the concept of the present invention may be implemented in various forms and should not be interpreted as being limited to the embodiments described in this specification or application.

[0018]

[0019] FIG. 1 is a drawing for explaining an example of a chuck structure according to an embodiment of the present invention. FIG. 2 is a plan view of a chuck according to an embodiment of the present invention.

[0020] Referring to FIGS. 1 and 2, the chuck structure (100) may be a structure capable of stably supporting a semiconductor test target and precisely aligning its position. After the manufacturing process is completed, the semiconductor device may be determined to be a good product through an electrical characteristic test. In this process, the die, which is the test target, is loaded onto the chuck structure (100), and the test may be performed through contact with a probe card (not shown).

[0021] In one embodiment, it may include a film (110), a chuck (120), and a chuck base (130).

[0022] In one embodiment, the film (110) may have a plurality of dies arranged thereon.

[0023] In one embodiment, the film (110) may have an adhesive force for fixing a plurality of dies.

[0024] In one embodiment, the film (110) may be placed on one side of the chuck (120). For example, one side of the chuck (120) may represent the upper surface of the chuck (120).

[0025] In one embodiment, the chuck (120) may be placed on the upper surface of the chuck base (130). Additionally, the chuck (120) may have a disc shape. However, this is exemplary and the shape of the chuck (120) is not limited thereto.

[0026] In one embodiment, the chuck (120) may be a mobile chuck that can be separated from and transported from the chuck base (130). Accordingly, the test process of the dies can be performed by replacing only the chuck (120) without changing the chuck base (130). Accordingly, even if the arrangement shape of the dies changes, dies having various arrangement shapes can be inspected quickly and easily. In addition, the chuck (120) may refer to various types of support members capable of supporting the film (110) and the test target, such as a wafer carrier, in addition to the mobile chuck.

[0027] In one embodiment, the chuck (120) may include a plurality of grooves (121) and a plurality of vacuum suction holes (122).

[0028] In one embodiment, a plurality of grooves (121) may be formed on one surface of the chuck (120). A plurality of grooves (121) may be formed uniformly on one surface of the chuck (120).

[0029] In one embodiment, a plurality of grooves (121) may represent long, narrow grooves carved into one surface of the chuck (120). For example, the plurality of grooves (121) may be formed in the shape of circular rings.

[0030] Meanwhile, although FIG. 2 describes a plurality of grooves (121) being formed in a circular ring shape, it is not necessarily limited thereto. For example, the grooves (121) may have a long, narrow, straight shape, or the grooves may have an X-shaped long, narrow shape with the straight shapes intersecting each other, and the groove shapes corresponding to the plurality of grooves (121) may be formed in various ways.

[0031] In one embodiment, a plurality of grooves (121) can adsorb a film (110). For example, the plurality of grooves (121) can be converted into a vacuum state by a plurality of vacuum adsorption holes (122). Accordingly, the plurality of grooves (121) can adsorb a film (110) into an internal space.

[0032] In one embodiment, a plurality of vacuum suction holes (122) may be formed to penetrate vertically through the interior of the chuck (120).

[0033] In one embodiment, a plurality of vacuum suction holes (122) may be connected to a plurality of grooves (121). A plurality of vacuum suction holes (122) may be connected to the bottom surface of a plurality of grooves (121). A plurality of vacuum suction holes (122) may be connected to an external vacuum pump (not shown). Each of the plurality of vacuum suction holes (122) may be connected to any one of the plurality of grooves (121). However, this is merely an example, and according to the embodiment, a plurality of vacuum suction holes (122) may be connected to a single groove (121).

[0034] In one embodiment, a plurality of vacuum suction holes (122) can convert a plurality of grooves (121) into a vacuum state. The plurality of vacuum suction holes (122) can suck the film (110) into a vacuum so that the plurality of grooves (121) adsorb the film (110).

[0035] In one embodiment, the chuck base (130) may have a cylindrical shape. The thickness of the chuck base (130) may be thicker than the thickness of the chuck (120). The chuck base (130) may be placed below the chuck (120). The chuck base (130) may be placed directly on the lower surface of the chuck (120). That is, the chuck (120) may be placed directly on the upper surface of the chuck base (130). As the chuck base (130) comes into direct contact with the chuck (120), heat generated from the dies can be conducted to the chuck (120) and the chuck base (130).

[0036]

[0037] FIG. 3 is a drawing for explaining an example in which a plurality of dies are arranged in a chuck structure according to one embodiment of the present invention.

[0038] Referring to FIG. 3, the plurality of dies (200) may have a rectangular shape. However, the shape of the plurality of dies (200) is not limited to a rectangular shape and may be formed in various shapes according to the embodiment.

[0039] In one embodiment, a plurality of dies (200) may be disposed on a film (110). For example, the plurality of dies (200) may be uniformly disposed on the upper surface of the film (110). That is, the lower surface of the plurality of dies (200) may be in direct contact with the upper surface of the film (110). Accordingly, the plurality of dies (200) may be disposed on a chuck (120) through the film (110).

[0040] Additionally, a plurality of dies (200) may be positioned above the location where a plurality of grooves (121) are formed. Accordingly, a plurality of grooves (121) may be located below the plurality of dies (200). Meanwhile, although FIG. 4 shows two grooves (121) located below one die (200), it is not necessarily limited thereto. For example, according to an embodiment, one groove (121) or three or more grooves (121) may be located below one die (200).

[0041] In one embodiment, the film (110) can fix a plurality of dies (200) through adhesive force. Accordingly, it is possible to prevent the plurality of dies (200) from detaching from the film (110) due to external vibration or impact. Additionally, the adhesive force may have a strength adjusted so that the plurality of dies (200) can be easily separated from the film (110).

[0042]

[0043] FIG. 4 is a drawing for explaining an example of adsorbing a film according to one embodiment of the present invention.

[0044] Referring to FIG. 4, a plurality of grooves (121) can be converted to a vacuum state to adsorb the film (110) before the plurality of dies (200) are separated from the film (110). For example, a plurality of vacuum adsorption holes (122) can adsorb the film (110) under vacuum. A portion of the film (110) in contact with the plurality of grooves (121) can be adsorbed inside the plurality of grooves (121). In this case, the portion of the film (110) adsorbed inside the plurality of grooves (121) can be moved downward to where the plurality of grooves (121) are located. Additionally, a portion of the film (110) can be separated from one side of the die (200) that was in contact.

[0045] In one embodiment, the width of the plurality of grooves (121) may be smaller than the length and width of the plurality of dies (200). In this case, even if the plurality of grooves (121) adsorb the film (110), the plurality of dies (200) are not adsorbed to the plurality of grooves (121), and the shape, position, etc. of the plurality of grooves (121) may be maintained.

[0046] Accordingly, the contact area between the film (110) and the plurality of dies (200) is reduced, thereby weakening the adhesion between the film (110) and the plurality of dies (200).

[0047]

[0048] FIGS. 5a to 5c are drawings for illustrating an example of separating a plurality of dies from a film according to one embodiment of the present invention.

[0049] Referring to FIG. 5a, the chuck structure (100) or the picker (300) can be moved by a moving part (not shown) so that the picker (300) can be positioned on the upper part of the chuck structure (100).

[0050] In one embodiment, the picker (300) may be a structure for separating a plurality of dies (200) from a chuck structure (100). The picker (300) may form a structure for adsorbing a plurality of dies (200) at the bottom.

[0051] In one embodiment, the plurality of grooves (121) may be converted to a default state prior to the vacuum state after a predetermined time has elapsed from the point at which they were converted to a vacuum state. The default state may mean a state that is not a vacuum state. For example, the plurality of vacuum suction holes (122) may stop vacuum suction. Even if the plurality of grooves (121) are converted to the default state, the state in which some areas of the film (110) are adsorbed to the plurality of grooves (121) (121) may be maintained. This is to prevent the additional consumption of unnecessary force due to the vacuum suction force applied in the downward direction when separating the plurality of dies (200) from the film (110) in the upward direction. The plurality of dies (200) may be separated from the film (110) after the plurality of grooves (121) are converted to the default state.

[0052] Referring to FIG. 5b, the picker (300) can be moved downward. The picker (300) can be moved toward the film (110) and the plurality of dies (200). The picker (300) can come into contact with the plurality of dies (200). The picker (300) can adsorb the plurality of dies (200).

[0053] Referring to FIG. 5c, the picker (300) can move upward after adsorbing a plurality of dies (200). Accordingly, the plurality of dies (200) can be separated from the film (110).

[0054] Meanwhile, in the example described above, the picker (300) is illustrated as moving in a downward direction, but it is not necessarily limited thereto. For example, if there is a component that can move up and down at the bottom of the chuck structure (100), the chuck structure (100) moves toward the picker (300), and when the picker (300) adsorbs a plurality of dies (200), the chuck structure (100) moves in a downward direction, thereby separating the plurality of dies (200) from the film (110). As another example, the picker (300) moves in a downward direction while the chuck structure (100) moves toward the picker (300), and when the picker (300) adsorbs a plurality of dies (200), the picker (300) and the chuck structure (100) move in opposite directions simultaneously, thereby separating the plurality of dies (200) from the film (110).

[0055] Accordingly, since the film (110) and the film (110) are separated from the multiple dies (200) while the adhesive force between the film (110) and the multiple dies (200) is weakened, the flatness of the multiple dies (200) can be maintained while easily separating the multiple dies (200) from the film (110).

[0056]

[0057] FIG. 6 is a drawing for explaining an example of a semiconductor test method using a chuck structure according to an embodiment of the present invention.

[0058] The method illustrated in FIG. 6 can be performed, for example, by the chuck structure (100) illustrated in FIG. 1.

[0059] Referring to FIG. 6, in step S601, the chuck structure (100) can place a plurality of dies (200) on a film (110) placed on one side of the chuck (120).

[0060] In step S603, the chuck structure (100) can convert a plurality of grooves (121) formed on one side of the chuck (120) into a vacuum state.

[0061] At this time, the chuck structure (100) can adsorb the film (110) through the vacuum state of the plurality of grooves (121).

[0062] In step S605, the chuck structure (100) can separate a plurality of dies (200) from the film (110).

[0063] Additionally, the chuck structure (100) can convert a plurality of grooves (121) to a default state prior to the vacuum state after a predetermined time has elapsed since the point of conversion to a vacuum state, prior to the separation step.

[0064]

[0065] FIGS. 7a and 7b are drawings for illustrating different examples of a chuck structure according to one embodiment of the present invention. Specifically, FIG. 7a illustrates an example in which the heating element is located at the bottom of the chuck, and FIG. 7b illustrates an example in which the heating element is located at the top of the chuck.

[0066] Referring to FIG. 7a, the chuck structure (100) may further include a heating part (140a) that heats the chuck (120) before a plurality of dies (200) are placed on the film (110).

[0067] In one embodiment, the heating unit (140a) may include components such as a heating element that contacts the chuck (120) and heats the chuck (120), and a control unit that controls the heating element to generate heat.

[0068] Referring to FIG. 7b, the heating unit (140b) may be located on the upper part of the chuck (120). At this time, the heating unit (140b) may move downward to come into contact with the chuck structure (100) and heat it, or heat the chuck structure (100) from a distance, such as with a laser.

[0069] Meanwhile, although FIGS. 7a and 7b describe the heating unit (140a, 140b) as being located at the bottom or top of the chuck (120), it is not necessarily limited thereto, and the heating unit (140a, 140b) may be located in a different area other than the bottom or top, and the method of heating the chuck (120) may also be set in various ways.

[0070]

[0071] FIG. 8 is a drawing for explaining another example of a semiconductor test method using a chuck structure according to one embodiment of the present invention.

[0072] The method illustrated in FIG. 8 can be performed, for example, by the chuck structure (100) illustrated in FIG. 7a and 7b.

[0073] Referring to FIG. 8, in step S801, the chuck structure (100) can heat the chuck (120).

[0074] In step S803, the chuck structure (100) can place a plurality of dies (200) on a film (110) placed on one side of the chuck (120).

[0075] In step S805, the chuck structure (100) can convert a plurality of grooves (121) formed on one side of the chuck (120) into a vacuum state.

[0076] At this time, the chuck structure (100) can adsorb the film (110) through the vacuum state of the plurality of grooves (121).

[0077] In step S807, the chuck structure (100) can separate a plurality of dies (200) from the film (110).

[0078] Additionally, the chuck structure (100) can convert a plurality of grooves (121) to a default state prior to the vacuum state after a predetermined time has elapsed since the point of conversion to a vacuum state, prior to the separation step.

[0079]

[0080] FIG. 9 is a drawing for explaining a semiconductor test device according to one embodiment of the present invention.

[0081] Referring to FIG. 9, the semiconductor test device (1) may include a sorter chamber (20), a loader (30), and a test chamber (10). The chuck structure (100) of FIG. 1, 7a and 7b may be configured as a component of the test chamber (10) or the sorter chamber (20).

[0082] The sorter chamber (20) can place test objects, such as a plurality of dies (200), on the chuck structure (100).

[0083] In one embodiment, the sorter chamber (20) may be composed of various components such as a base, a transfer unit, a moving unit, and a picker for placing a test object on a chuck structure (100).

[0084] In one embodiment, the sorter chamber (20) may provide a space for separating a plurality of dies (200) from a film (110) after the plurality of grooves (121) of the chuck structure (100) adsorb the film (110) through a vacuum.

[0085] The loader (30) can transfer the chuck (120) from the sorter chamber (20) to the test chamber (10).

[0086] In one embodiment, after a test object is placed on the upper surface of the chuck (120), the chuck (120) and the test object can be discharged to the outside of the sorter chamber (20) by a loader (30). The chuck (120) and the test object can be transferred from the sorter chamber (20) to the test chamber (10).

[0087] The present invention has industrial applicability because it can weaken the adhesion of the film while maintaining the flatness of the die.

Claims

1. A film on which a plurality of dies are arranged; and A chuck structure comprising: a chuck having a film disposed on one surface and a plurality of grooves formed on the one surface for adsorbing the film.

2. In claim 1, the film is, A chuck structure having adhesive force for fixing the above plurality of dies.

3. In claim 1, the width of the plurality of grooves is, A chuck structure smaller than the length and width of the plurality of dies mentioned above.

4. In claim 1, the plurality of grooves are, A chuck structure in which the plurality of dies are converted to a vacuum state and adsorb the film before being separated from the film.

5. In claim 4, the plurality of grooves are, A chuck structure that converts to a default state prior to the vacuum state after a predetermined time has elapsed from the point in time when it is converted to the vacuum state.

6. In claim 5, the plurality of dies are, A chuck structure that is separated from the film after the plurality of grooves are converted to the default state.

7. In Paragraph 1, A chuck structure further comprising a heating unit that heats the chuck before the plurality of dies are placed on the film.

8. A step of placing a plurality of dies on a film placed on one side of the rack; A step of converting a plurality of grooves formed on one surface of the above chuck into a vacuum state; and A semiconductor test method using a chuck structure, comprising the step of separating the plurality of dies from the film.

9. In claim 8, the transforming step is, A semiconductor test method using a chuck structure, comprising the step of adsorbing the film through the vacuum state of the plurality of grooves.

10. In Paragraph 8, A semiconductor test method using a chuck structure, further comprising: a step of converting the plurality of grooves to a default state prior to the vacuum state after a predetermined time has elapsed from the point of conversion to the vacuum state, prior to the above-mentioned separation step.

11. In Paragraph 8, A semiconductor testing method using a chuck structure, further comprising the step of heating the chuck prior to the above-mentioned placement step.

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