Magnetroresistive element, method of manufacturing the same, and magnetic multilayered film manufacturing apparatus

A magneto-resistance element and a manufacturing method technology, applied in the field of magneto-resistance elements, can solve problems such as reducing the MR ratio, and achieve the effect of high thermal stability

CN101304070AActive Publication Date: 2008-11-12CANON ANELVA CORP
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
Publication Date
2008-11-12

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Abstract

A magnetoresistive element includes an antiferromagnetic layer formed from a layer containing manganese, a layered magnetization fixed layer which includes a first magnetization fixed layer located over a side of the antiferromagnetic layer and formed from a layer containing a ferromagnetic material and a platinum group metal, a second magnetization fixed layer formed from a layer containing a ferromagnetic material, and a first nonmagnetic intermediate layer located between the first magnetization fixed layer and the second magnetization fixed layer, a magnetic free layer formed from a layer containing a ferromagnetic material, and a second nonmagnetic intermediate layer located between the layered magnetization fixed layer and the magnetic free layer.
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Description

technical field

[0001] The present invention relates to a magnetoresistive element such as a tunnel magnetoresistance element or a giant magnetoresistance element, a manufacturing method thereof, and a magnetic multilayer film manufacturing apparatus, and more particularly, to a magnetoresistance element such as a tunnel magnetoresistance element usable for a magnetic head of a magnetic disk drive or a magnetic random access memory. A magnetoresistance element of a resistance element or a giant magnetoresistance element, a manufacturing method thereof, and a magnetic multilayer film manufacturing apparatus. Background technique

[0002] A magnetic head of a conventional disk drive uses a giant magneto-resistance element or a tunnel magneto-resistance element.

[0003] The giant magnetoresistive element has an antiferromagnetic layer, a ferromagnetic pinned layer, a nonmagnetic conductive layer and a ferromagnetic free layer. The tunnel magnetoresistive element has an antife...

Examples

Embodiment Construction

[0082] Preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings. Note that the constituent elements described in the embodiments are merely examples. The technical scope of the present invention is determined by the scope of the claims and is not limited by the following individual embodiments.

[0083] FIG. 1 is a cross-sectional view of a tunnel magnetoresistive element according to a first embodiment of the present invention.

[0084] By sequentially stacking the lower electrode layer 11, the antiferromagnetic layer 12, the first ferromagnetic pinned layer (first magnetization pinned layer) 13, the first nonmagnetic intermediate layer 14, and the second ferromagnetic pinned layer (second magnetization pinned layer) 15. The second non-magnetic intermediate layer (tunnel barrier layer) 16, the ferromagnetic free layer (magnetization free layer) 17 and the upper electrode layer 18 form the tunnel magnetoresisti...