A high thermal conductivity high power synchronous rectification module

Abstract

The present invention discloses a high-heat-conductivity high-power synchronous rectification module, which is provided with a substrate, a plurality of MOS tube units, a driving signal terminal and a source bus bar; the characteristics are as follows: the electrical connection circuit of the conductive layer also includes a drain welding point corresponding to the D pole of each MOS tube unit, so that the D pole of each MOS tube unit is welded on the corresponding drain welding point; the substrate is also provided with an insulating layer and a drain bus heat-conducting layer, the drain bus heat-conducting layer is composed of a copper plate and a connecting column corresponding to the D pole of each MOS tube unit, the insulating layer is located between the conductive layer and the copper plate, the length of each connecting column is equal, and each connecting column is embedded in the insulating layer, so that each connecting column is electrically connected between the copper plate and the D pole of the corresponding MOS tube unit. The present invention is suitable for synchronous rectification of high-power output, and has the advantages of simple and convenient wiring of the electrical connection circuit, good current sharing performance, suitable for water cooling and heat dissipation, good thermal conductivity, and strong synchronous rectification performance.

Description

Technical Field

[0001] The invention relates to a high-thermal-conductivity and high-power synchronous rectification module, belonging to the field of power electronic devices. Background Art

[0002] At present, high-power rectifiers used in oxidation, electroplating, electrolysis and other industries are generally low-voltage and high-current devices. As the requirements for equipment efficiency become higher and higher, the loss of rectifier devices must be as low as possible. At present, the use of low-power MOS tube synchronous rectification can effectively achieve the performance requirements of high current and low loss. To achieve high-current synchronous rectification, multiple rectifier modules are generally connected in parallel, and each rectifier module uses multiple MOS tubes in parallel. For example: Figure 1 As shown, the existing high thermal conductivity high power synchronous rectification module is provided with an epoxy substrate 1', a plurality of MOS tube units, a driving signal terminal 2', a source bus 3' and a drain bus 4', the driving signal terminal 2' is used to input a driving signal for controlling the synchronous rectification of the MOS tube unit, the source bus 3' is used to output the summary current after synchronous rectification, the epoxy substrate 1' is provided with an electrical connection circuit, and the electrical connection circuit includes a gate connection circuit 11G', a source connection circuit 11S' and a drain connection circuit 11 D', MOS tube unit, driving signal terminal 2', source bus 3' and drain bus 4' are all welded on the epoxy substrate 1', so that: the G pole of each MOS tube unit is electrically connected to the driving signal terminal 2' through the gate connection line 11G', the S pole of each MOS tube unit is electrically connected to the source bus 3' through a source connection line 11S', and the D pole of each MOS tube unit is electrically connected to the drain bus 4' through a drain connection line 11D'.

[0003] The above existing high thermal conductivity high power synchronous rectification module has the following disadvantages:

[0004] Since the G pole, D pole and S pole of each MOS tube unit are connected on the same surface of the epoxy substrate 1', the electrical connection line of the G pole crosses the electrical connection line of the D pole, which increases the difficulty of wiring the electrical connection line, and also causes the length of the D pole connection line of each MOS tube to be unequal, affecting the current sharing between each MOS tube unit. At the same time, since the high thermal conductivity high power synchronous rectifier module is a high power device, it is difficult to overcome the problem of high power heat dissipation. In the application environment of high power load and high heat, the synchronous rectifier module is likely to face serious failure.

[0005] Therefore, it is necessary to provide a high thermal conductivity and high power synchronous rectifier module to solve the problems of current sharing, heat dissipation, failure, etc. of the synchronous rectifier module. Summary of the invention

[0006] The technical problem to be solved by the present invention is to provide a high-thermal-conductivity and high-power synchronous rectification module.

[0007] To solve the above technical problems, the technical solution adopted by the present invention is as follows:

[0008] A high-thermal-conductivity, high-power synchronous rectification module is provided with a substrate, a plurality of MOS tube units, a drive signal terminal and a source bus bar, wherein the substrate is provided with a conductive layer, the conductive layer is an electrical connection circuit formed by etching, the electrical connection circuit includes a gate connection circuit and a source connection circuit, the MOS tube units, the drive signal terminal and the source bus bar are all welded on the conductive layer, so that: the G pole of each of the MOS tube units is electrically connected to the drive signal terminal through the gate connection circuit, the S pole of each of the MOS tube units is electrically connected to the source bus bar through one of the source connection circuits, and the length of each of the source connection circuits is equal ; It is characterized in that: the electrical connection circuit of the conductive layer also includes a drain welding point arranged corresponding to the D pole of each MOS tube unit, so that the D pole of each MOS tube unit is welded on the corresponding drain welding point; the substrate is also provided with an insulating layer and a drain bus heat conductive layer, the drain bus heat conductive layer is composed of a copper plate and a connecting column arranged corresponding to the D pole of each MOS tube unit, the insulating layer is located between the conductive layer and the copper plate, the length of each connecting column is equal, and each connecting column is embedded in the insulating layer, so that each connecting column is electrically connected between the copper plate and the D pole of the corresponding MOS tube unit.

[0009] As a preferred embodiment of the present invention: the number of the MOS tube units is an even number, and the even number of MOS tube units is divided into two groups, each group of the MOS tube units are evenly spaced along the extension direction of the source bus, and the two groups of MOS tube units are symmetrically arranged along the source bus.

[0010] As a preferred implementation manner of the present invention: the MOS tube unit is a chip including one or more MOS tubes.

[0011] As a preferred embodiment of the present invention: the electrical connection circuit of the conductive layer is a copper foil circuit, and the source bus is a conductive copper bus.

[0012] As a preferred embodiment of the present invention: the high thermal conductivity and high power synchronous rectification module is also provided with a resistor-capacitor absorption unit corresponding to each of the MOS tube units, and the electrical connection circuit of the conductive layer also includes a resistor-capacitor absorption unit connection circuit; each of the resistor-capacitor absorption units is welded on the conductive layer, so that each of the resistor-capacitor absorption units is electrically connected between the D pole and the S pole of the corresponding MOS tube unit through one of the resistor-capacitor absorption unit connection circuits.

[0013] As a preferred embodiment of the present invention: the MOS tube unit, the driving signal terminal, the source bus and the RC absorption unit are all SMD components, which are all welded on the conductive layer by SMD welding.

[0014] Compared with the prior art, the present invention has the following beneficial effects:

[0015] First, the present invention is suitable for synchronous rectification of high-power output, and has the advantages of simple and convenient electrical connection line wiring, good current sharing performance, suitable for water cooling and heat dissipation, good thermal conductivity, and strong synchronous rectification performance, specifically:

[0016] The multiple MOS tube units in the present invention are connected in parallel and can be used for synchronous rectification. In the high-power and high-heat synchronous rectification application scenario, since the present invention realizes the current convergence of the D poles of each MOS tube unit through the drain converging heat-conducting layer, on the one hand, it avoids the electrical connection lines of the G pole, D pole and S pole of the MOS tube unit from crossing in the conductive layer, making the wiring of the electrical connection lines of the conductive layer simpler and more convenient, and ensuring that the length of each source connection line connected between the S pole and the source bus is equal, and the length of each connecting column connected between the D pole and the copper plate is equal, so as to ensure the current sharing between each MOS tube in the high-thermal conductivity and high-power synchronous rectification module; on the other hand, the copper plate is suitable for being directly attached to the water-cooled radiator, so that the heat generated by the MOS tube can be quickly transferred to the copper plate through the connecting column and the insulating layer, and then dissipated through the water-cooled radiator, so as to quickly reduce the temperature rise of the MOS tube during rectification, enhance the ability of the MOS tube to pass large current, and enhance the synchronous rectification performance of the present invention.

[0017] Secondly, the present invention arranges two groups of MOS tube units symmetrically along the source bus, which can increase the arrangement density of the MOS tube units on the substrate while ensuring the current sharing performance of the present invention, thereby improving the area utilization of the substrate.

[0018] Thirdly, the MOS tube unit of the present invention adopts a patch component, which can be welded more conveniently and quickly, and the MOS tube does not need to be subjected to processing such as pin bending, which will not cause potential damage to the performance of the MOS tube unit. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments:

[0020] Figure 1 It is a structural schematic diagram of an existing high thermal conductivity and high power synchronous rectification module;

[0021] Figure 2 It is a structural schematic diagram of a high thermal conductivity and high power synchronous rectification module of the present invention;

[0022] Figure 3 It is a schematic cross-sectional structural diagram of the high thermal conductivity and high power synchronous rectification module of the present invention. DETAILED DESCRIPTION

[0023] like Figure 2 and Figure 3 As shown, the present invention discloses a high thermal conductivity and high power synchronous rectification module, which is provided with a substrate 1, a plurality of MOS tube units, a driving signal terminal 2 and a source bus 3, wherein the driving signal terminal 2 is used to input a driving signal for controlling the synchronous rectification of the MOS tube unit, and the source bus 3 is used to output a summary current after synchronous rectification, and the substrate 1 is provided with a conductive layer 11, which is an electrical connection circuit formed by etching, and the electrical connection circuit includes a gate connection circuit 11G and a source connection circuit 11S, and the MOS tube unit, the driving signal terminal 2 and the source bus 3 are all welded on the conductive layer 11, so that: the G pole of each MOS tube unit is electrically connected to the driving signal terminal 2 through the gate connection circuit 11G, and the S pole of each MOS tube unit is electrically connected to the source bus 3 through a source connection circuit 11S, and the length of each source connection circuit 11S is equal.

[0024] The inventive concept of the present invention is as follows: the electrical connection circuit of the conductive layer 11 further includes a drain welding point 11D arranged corresponding to the D pole of each MOS tube unit, so that the D pole of each MOS tube unit is welded on the corresponding drain welding point 11D; the substrate 1 is further provided with an insulating layer 12 and a drain bus heat conductive layer 13, the drain bus heat conductive layer 13 is composed of a copper plate 131 and a connecting column 132 arranged corresponding to the D pole of each MOS tube unit, the insulating layer 12 is located between the conductive layer 11 and the copper plate 131, the length of each connecting column 132 is equal, and each connecting column 132 is embedded in the insulating layer 12, so that each connecting column 132 is electrically connected between the copper plate 131 and the D pole of the corresponding MOS tube unit.

[0025] The insulating layer 12 should be made of a material with good thermal conductivity and insulation, and the drain bus heat conducting layer 13, namely the copper plate 131 and each connecting column 132, can be made of copper material in one piece.

[0026] Therefore, the multiple MOS tube units in the present invention are connected in parallel and can be used for synchronous rectification. In the high-power and high-heat synchronous rectification application scenario, since the present invention realizes the current convergence of the D poles of each MOS tube unit through the drain converging heat-conducting layer 13, on the one hand, it is avoided that the electrical connection lines of the G pole, D pole and S pole of the MOS tube unit are crossed in the conductive layer 11, so that the wiring of the electrical connection lines of the conductive layer 11 is simpler and more convenient, and it is ensured that the length of each source connection line 11S connected between the S pole and the source bus 3 is equal, and the length of each connecting column 132 connected between the D pole and the copper plate 131 is equal, so as to ensure the current sharing between each MOS tube in the high-thermal conductivity and high-power synchronous rectification module; on the other hand, the copper plate 131 is suitable for being directly attached to the water-cooled radiator, so that the heat generated by the MOS tube can be quickly transferred to the copper plate 131 through the connecting column 132 and the insulating layer 12, and then dissipated through the water-cooled radiator, so as to quickly reduce the temperature rise of the MOS tube during rectification, enhance the ability of the MOS tube to pass large current, and enhance the synchronous rectification performance of the present invention.

[0027] Based on the above inventive concept, the present invention adopts the following preferred structure:

[0028] As a preferred embodiment of the present invention, the number of MOS tube units is an even number, and the even number of MOS tube units is divided into two groups, each group of MOS tube units is evenly spaced along the extension direction of the source bus 3, and the two groups of MOS tube units are symmetrically arranged along the source bus 3. Thus, it is ensured that the length of each source connection line 11S connected between the S pole and the source bus 3 is equal, and the length of each connection column 132 connected between the D pole and the copper plate 131 is equal, that is, under the premise of ensuring the current sharing performance of the present invention, the arrangement density of the MOS tube units on the substrate 1 is improved to improve the area utilization rate of the substrate 1.

[0029] As a preferred embodiment of the present invention: the MOS tube unit 2 may be a chip including one or more MOS tubes.

[0030] As a preferred embodiment of the present invention: the electrical connection circuit of the conductive layer 11 is a copper foil circuit, and the source bus bar 3 is a conductive copper bus bar.

[0031] As a preferred embodiment of the present invention: the high thermal conductivity and high power synchronous rectification module is further provided with a RC absorption unit corresponding to each MOS tube unit, and the electrical connection circuit of the conductive layer 11 further includes a RC absorption unit connection circuit; each RC absorption unit is welded on the conductive layer 11, so that each RC absorption unit is electrically connected between the D pole and the S pole of the corresponding MOS tube unit through a RC absorption unit connection circuit, so as to reduce the turn-off peak of the MOS tube unit and avoid the reverse voltage breakdown of the MOS tube unit, thereby better protecting the MOS tube unit.

[0032] As a preferred embodiment of the present invention: the MOS tube unit, the driving signal terminal 2, the source bus 3 and the RC absorption unit are all SMD components, and they are all welded on the conductive layer 11 by SMD welding. Therefore, since the MOS tube unit adopts SMD components, it can be welded more conveniently and quickly, and the MOS tube does not need to be processed such as pin bending, which will not cause potential damage to the performance of the MOS tube unit.

[0033] The present invention is not limited to the above-mentioned specific implementation modes. According to the above-mentioned contents, in accordance with the common technical knowledge and customary means in the field, without departing from the above-mentioned basic technical ideas of the present invention, the present invention can also make other various forms of equivalent modifications, replacements or changes, all of which fall within the protection scope of the present invention.

Claims

1. A high thermal conductivity and high power synchronous rectification module, comprising a substrate (1), a plurality of MOS tube units, a drive signal terminal (2) and a source bus (3), wherein the substrate (1) is provided with a conductive layer (11), the conductive layer (11) is an electrical connection circuit formed by etching, the electrical connection circuit comprises a gate connection circuit (11G) and a source connection circuit (11S), the MOS tube units, the drive signal terminal (2) and the source bus (3) are all welded on the conductive layer (11), so that: the G pole of each MOS tube unit is electrically connected to the drive signal terminal (2) through the gate connection circuit (11G), the S pole of each MOS tube unit is electrically connected to the source bus (3) through one source connection circuit (11S), and the length of each source connection circuit (11S) is equal; characterized in that: The electrical connection circuit of the conductive layer (11) further comprises a drain welding point (11D) arranged corresponding to the D pole of each MOS tube unit, so that the D pole of each MOS tube unit is welded on the corresponding drain welding point (11D); the substrate (1) is further provided with an insulating layer (12) and a drain bus heat conductive layer (13); the drain bus heat conductive layer (13) is composed of a copper plate (131) and a connecting column (132) arranged corresponding to the D pole of each MOS tube unit; the insulating layer (12) is located between the conductive layer (11) and the copper plate (131); the length of each connecting column (132) is equal, and each connecting column (132) is embedded in the insulating layer (12), so that each connecting column (132) is electrically connected between the copper plate (131) and the D pole of the corresponding MOS tube unit; The number of the MOS tube units is an even number, and the even number of MOS tube units is divided into two groups, and the MOS tube units in each group are evenly spaced and arranged along the extension direction of the source bus (3), and the two groups of MOS tube units are symmetrically arranged along the source bus (3); The MOS tube unit (2) is a chip including one or more MOS tubes; The electrical connection circuit of the conductive layer (11) is a copper foil circuit, and the source bus bar (3) is a conductive copper bus bar.

2. The high thermal conductivity and high power synchronous rectification module according to claim 1, characterized in that: The high thermal conductivity and high power synchronous rectification module is further provided with a resistance-capacitance absorption unit corresponding to each of the MOS tube units, and the electrical connection circuit of the conductive layer (11) further comprises a resistance-capacitance absorption unit connection circuit; each of the resistance-capacitance absorption units is welded on the conductive layer (11), so that each of the resistance-capacitance absorption units is electrically connected between the D pole and the S pole of the corresponding MOS tube unit through one of the resistance-capacitance absorption unit connection circuits.

3. The high thermal conductivity and high power synchronous rectification module according to claim 2, characterized in that: The MOS tube unit, the driving signal terminal (2), the source bus (3) and the resistor-capacitor absorption unit are all chip components, and they are all welded on the conductive layer (11) by chip welding.

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