Ion implantation apparatus and solar cell manufacturing method

Abstract

The present application relates to a kind of ion implantation equipment and solar cell manufacturing method.The ion implantation is applied to copper indium gallium selenide (CIGS) thin film preparation device, the preparation device includes process cavity, the process cavity is used to form CIGS thin film on substrate, the ion implantation equipment includes: ion accommodating cavity, in the process cavity, the ion accommodating cavity includes release port, the release port is located below the substrate formed with CIGS thin film;Ion generating component, in the ion accommodating cavity, for producing alkali metal ions in the ion accommodating cavity;Ion acceleration component, in the process cavity, for the alkali metal ions generated by the ion generating component are accelerated, so that the alkali metal ions are emitted from the release port, and are directed to the CIGS thin film.This technical solution can accurately control the distribution gradient and concentration of the required alkali metal ions, obtain the perfect distribution of alkali metal ion gradient, enhance the performance of CIGS thin film, save energy consumption.

Description

Technical Field

[0001] This invention relates to the field of solar cell technology, and more particularly to ion implantation equipment and methods for manufacturing solar cells. Background Technology

[0002] Currently, in the fabrication of copper indium gallium selenide (CIGS) thin-film solar cells, sodium fluoride filler is first evaporated in a crucible to form a sodium-containing layer on the back electrode substrate. Then, plasma diffusion treatment (PDT) is used to allow sodium ions to penetrate into the CIGS film layer. In this way, during the fabrication of the CIGS film, the sodium ions can promote the preferential formation of copper indium selenide compounds, displacing gallium elements from diffusing into the back electrode layer, which is beneficial for deepening the photosensitive layer. It can also passivate CIGS lattice and surface defects, thereby increasing the hole carrier concentration. Furthermore, the reactivity of sodium ions is beneficial to the bonding activity between the back electrode layer and the CIGS layer, making the differentiation of the PN junction more obvious, thereby increasing the open-circuit voltage of the CIGS thin-film solar cell.

[0003] However, this fabrication method cannot achieve a uniformly distributed sodium-containing layer on a large-area substrate. This results in uneven sodium ion penetration of the CIGS film. Furthermore, this method requires pre-fabricating a sodium-containing layer and then allowing sodium ions to penetrate it during CIGS film formation to influence the crystal lattice or increase the open-circuit voltage and carrier concentration of the battery. The optimal effect requires sodium ion penetration, and the penetration depth must be gradientd to achieve this, making depth control difficult. Moreover, the fluorine in the sodium fluoride will combine with selenium during the CIGS film fabrication process to produce SeF6 gas, which is removed by the vacuum system. However, selenium fluoride may react with water during maintenance of the process chamber to generate highly toxic HF gas, posing a health hazard. Summary of the Invention

[0004] This invention provides an ion implantation device and a method for fabricating solar cells. It allows for precise control of the required distribution gradient and concentration of alkali metal ions, resulting in a perfectly distributed alkali metal ion gradient, enhancing the performance of CIGS thin films, saving significant amounts of energy consumed in thermal evaporation, and preventing harm to human health. The technical solution is as follows:

[0005] According to a first aspect of the present invention, an ion implantation apparatus is provided, applied to a copper indium gallium selenide (CIGS) thin film fabrication apparatus, the fabrication apparatus including a process chamber for forming a CIGS thin film on a substrate to obtain a CIGS thin film substrate, characterized in that the ion implantation apparatus includes:

[0006] An ion-containing cavity is located within the process cavity. The ion-containing cavity includes a release port, which is located below the substrate on which the CIGS thin film is formed and faces the CIGS thin film.

[0007] An ion generating component is located within the ion accommodating cavity and is used to generate alkali metal ions within the ion accommodating cavity.

[0008] An ion acceleration component, located within the process chamber, is used to accelerate the alkali metal ions generated by the ion generating component, so that the alkali metal ions are ejected from the release port and directed towards the CIGS film.

[0009] In one embodiment, the ion generating component includes:

[0010] An alkali metal target is located within the ion-containing cavity;

[0011] A DC pulse power supply interface is used to connect a DC pulse power supply, wherein the anode of the DC pulse power supply is connected to the housing of the process chamber, and the cathode of the DC pulse power supply is connected to the alkali metal target.

[0012] A conduit, one end of which is connected to the ion containment chamber and the other end of which is connected to the outside of the process chamber, is used to introduce inert gas into the ion containment chamber.

[0013] In one embodiment, the alkali metal target material comprises a horizontal target material.

[0014] In one embodiment, the horizontal target material includes a cylindrical horizontal rotating target material; the ion implantation device further includes:

[0015] Controller;

[0016] A motor, connected to the controller and the cylindrical horizontal rotating target, is used to drive the cylindrical horizontal rotating target to rotate under the control of the controller.

[0017] In one embodiment, the release port includes a top opening of the ion-containing cavity; the ion acceleration component further includes:

[0018] The coil is spirally wound around the outer wall of the ion-containing cavity;

[0019] A pulse power interface is used to connect a pulse power supply, the two ends of which are respectively connected to the two ends of the coil, to generate a magnetic field in the coil. The magnetic field is used to accelerate the alkali metal ions in the ion accommodating cavity, so that the alkali metal ions are ejected from the release port.

[0020] In one embodiment, the ion acceleration component further includes:

[0021] A grounding metal plate is located between the surface opposite to the CIGS film surface of the substrate on which the CIGS film is formed and the top of the process chamber, and is parallel to the substrate on which the CIGS film is formed.

[0022] In one embodiment, the ion implantation device includes two ion-containing chambers and two ion-generating components located within the two ion-containing chambers respectively; wherein the release ports of the two ion-containing chambers are opposite each other at a certain angle;

[0023] The ion acceleration component includes a particle collider, which has an input port and an output port. The input port is connected to the release ports of the two ion containment cavities. The particle collider is used to accelerate and collide the alkali metal ions generated in the two ion containment cavities that are input from the input port, and to eject the collided alkali metal ions from the output port towards the CIGS thin film.

[0024] According to a first aspect of the present invention, a method for manufacturing a solar cell is provided, comprising:

[0025] Deposit a back electrode layer on the substrate;

[0026] A CIGS thin film is fabricated on the back electrode layer to form a CIGS thin film substrate.

[0027] A predetermined number of alkali metal ions are generated, and the alkali metal ions are injected into the CIGS thin film at a predetermined speed to form a CIGS thin film substrate implanted with the alkali metal ions.

[0028] In one embodiment, the method further includes:

[0029] The CIGS thin film substrate implanted with alkali metal ions is annealed.

[0030] In one embodiment, the annealing temperature during the annealing process ranges from 500 to 600°C, and the annealing time ranges from 10 to 40 minutes.

[0031] The technical solutions provided by the embodiments of the present invention can include the following beneficial effects: In this embodiment, alkali metal ions can be implanted into CIGS thin films using the ion implantation equipment described above. The alkali metal ions implanted by this ion implantation technology have excellent uniformity (especially on large-area substrates), optimizing the problem of poor uniformity of alkali metal ion distribution. The ion implantation equipment can also precisely control the required distribution gradient and concentration of alkali metal ions by controlling the ion velocity and quantity, obtaining a perfectly distributed alkali metal ion gradient, enhancing the performance of CIGS thin films. Moreover, the ion implantation method does not require the use of sodium fluoride, which can eliminate the formation of fluorides and prevent harm to human health. In addition, the application conditions of ion implantation technology do not require high temperatures, which can save a lot of energy consumption in thermal evaporation.

[0032] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and are not intended to limit the invention. Attached Figure Description

[0033] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with the invention and, together with the description, serve to explain the principles of the invention.

[0034] Figure 1 This is a schematic diagram of the structure of an ion implantation device according to an exemplary embodiment.

[0035] Figure 2 This is a schematic diagram of the structure of an ion implantation device according to an exemplary embodiment.

[0036] Figure 3 This is a schematic diagram of the structure of an ion implantation device according to an exemplary embodiment.

[0037] Figure 4 This is a flowchart illustrating a method for manufacturing a solar cell according to an exemplary embodiment.

[0038] Figure 5 This is a flowchart illustrating a method for manufacturing a solar cell according to an exemplary embodiment. Detailed Implementation

[0039] Exemplary embodiments will now be described in detail, examples of which are illustrated in the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numerals in different drawings denote the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present invention. Rather, they are merely examples of apparatuses and methods consistent with some aspects of the invention as detailed in the appended claims.

[0040] Figure 1 This is a schematic diagram of an ion implantation device according to an exemplary embodiment. The ion implantation device is applied to a copper indium gallium selenide (CIGS) thin film fabrication apparatus 1, which includes a process chamber 11, such as... Figure 1 As shown, the ion implantation device includes an ion containment chamber 12, an ion generating component 13, and an ion accelerating component 14.

[0041] Here, the process chamber 11 is used to form a CIGS thin film on the substrate. The process chamber 11 can be a vacuum chamber. The ion containment chamber 12 is located inside the process chamber 11. The ion containment chamber 12 includes a release port 121, which is located below the substrate 20 on which the CIGS thin film is formed. An ion generating member 13 is located inside the ion containment chamber 12 and is used to generate alkali metal ions inside the ion containment chamber 12. An ion accelerating member 14 is located inside the process chamber 11 and is used to accelerate the alkali metal ions generated by the ion generating member 13, so that the alkali metal ions are ejected from the release port 121 and directed towards the CIGS thin film.

[0042] Here, as Figure 1 As shown, a transfer member 15 is also provided inside the process cavity 11. The transfer member 15 is located inside the process cavity 11 and is used to transfer the substrate 20 entering the process cavity 11. For example, Figure 1 As shown, the transmission component 15 can be configured according to... Figure 1 The arrows indicate the direction of transmission to substrate 20, which allows the CIGS film in each region of substrate 20 to pass through the release port 121 and receive the alkali metal ions emitted from the release port 121.

[0043] Here, the ion generating component 13 can generate a preset number of alkali metal ions, thus precisely controlling the concentration of alkali metal ions injected into the CIGS thin film. The ion accelerating component 14 can accelerate the alkali metal ions generated by the ion generating component 13 to a preset speed, so that the alkali metal ions are injected into the CIGS thin film at the preset speed, precisely controlling the depth of alkali metal ions injected into the CIGS thin film. After depositing a back electrode layer on the substrate and fabricating a CIGS thin film on the back electrode layer, the required alkali metal ions can be precisely injected into the CIGS thin film on the substrate using the aforementioned ion implantation equipment. The injection depth and concentration can be precisely controlled, thereby obtaining a perfectly distributed alkali metal ion gradient. This achieves the following optimal effects: 1) promoting the preferential formation of copper indium selenide (CIGS) compounds, displacing gallium elements from diffusing into the back electrode layer on the substrate, which is beneficial for deepening the photosensitive layer; 2) passivating CIGS lattice and surface defects, thereby increasing the hole carrier concentration; 3) the reactivity of alkali metal ions is beneficial for the bonding activity between the back electrode layer and the CIGS thin film, making the differentiation of the PN junction more obvious, thereby increasing the open-circuit voltage of the CIGS thin film solar cell.

[0044] Here, the alkali metal can be sodium, potassium, or other alkali metals. Considering cost and performance, sodium is preferred.

[0045] Preferably, the back electrode layer can be a molybdenum layer.

[0046] This embodiment utilizes the aforementioned ion implantation equipment to implant alkali metal ions into CIGS thin films using ion implantation technology. This ion implantation technology exhibits excellent uniformity (especially on large-area substrates), optimizing the problem of poor uniformity in alkali metal ion distribution. Furthermore, the ion implantation equipment can precisely control the required distribution gradient and concentration of alkali metal ions by controlling the ion velocity and quantity, resulting in a perfectly distributed alkali metal ion gradient, enhancing the performance of the CIGS thin film. Moreover, the ion implantation method eliminates the need for sodium fluoride, preventing the formation of fluorides and protecting human health. Additionally, the application conditions of ion implantation technology do not require high temperatures, saving significant amounts of energy consumed in thermal evaporation.

[0047] In one possible implementation, Figure 2 This is a schematic diagram illustrating the structure of an ion implantation device applied to a copper indium gallium selenide (CIGS) thin film according to an exemplary embodiment, such as... Figure 2 As shown, the ion generating component 13 includes: an alkali metal target 131 located within the ion-containing cavity 12; a DC pulse power interface 132, externally connected to a DC pulse power source, enabling the interface to provide DC pulse power; the anode of the DC pulse power source is connected to the housing of the process cavity 11, and the cathode is connected to the alkali metal target 131; and a conduit 133, one end of which connects to the ion-containing cavity 12, and the other end connects to the outside of the process cavity 11, for introducing inert gas into the ion-containing cavity 12.

[0048] Here, PVD (Physical Vapor Deposition) technology can be used. Under the power supply of DC pulse power interface 132, the inert gas such as argon introduced by conduit 133 is accelerated and impacted by alkali metal target 131. After the alkali metal ions on the alkali metal target 131 are knocked down by argon ions, they form alkali metal ions to be accelerated.

[0049] Here, the number of alkali metal ions generated can be controlled by controlling the power supply of the DC pulse power interface 132. In this way, a preset number of alkali metal ions can be generated by controlling the power supply of the DC pulse power interface 132 as needed.

[0050] This embodiment can employ PVD technology, whereby the inert gas introduced through the conduit knocks down alkali metal ions on the alkali metal target under the voltage provided by the DC pulse power interface, generating a preset number of alkali metal ions, which is simple to implement.

[0051] In one possible implementation, such as Figure 2 As shown, the alkali metal target 131 includes a horizontal target.

[0052] Here, the alkali metal target can be a vertical target or a horizontal target. However, in order to cooperate with the CIGS co-evaporation working mode, the transport member 15 transports the substrate 20 in the horizontal direction. In order to facilitate the injection of the generated alkali metal ions onto the CIGS film on the substrate 20, the ion generating member 13 needs to be located below the substrate on which the CIGS film is formed. The alkali metal target 131 used is a horizontal target.

[0053] In this embodiment, the alkali metal target can be a horizontal target, which can be used in conjunction with the CIGS co-evaporation working mode to facilitate the projection of the generated alkali metal ions onto the CIGS thin film on the substrate in the horizontal direction, and also facilitates the utilization of space within the process chamber.

[0054] In one possible implementation, such as Figure 2 As shown, the alkali metal target 131 also includes a cylindrical horizontal rotating target, a controller (not shown in the figure), and a motor (not shown in the figure), which connects the controller and the cylindrical horizontal rotating target 131. The motor is used to drive the cylindrical horizontal rotating target 131 to rotate under the control of the controller.

[0055] Here, the alkali metal target can be a plate-shaped target or a cylindrical horizontal rotating target. However, to improve the utilization rate of alkali metal on the target, the alkali metal target in this embodiment can be a cylindrical horizontal rotating target. During the inert gas impact on the cylindrical horizontal rotating target, the controller can control the motor to rotate the cylindrical horizontal rotating target, ensuring that alkali metal ions in all areas of the alkali metal target can be knocked off. Preferably, the motor can drive the cylindrical horizontal rotating target 131 to rotate at a uniform speed under the control of the controller, ensuring that alkali metal ions on the alkali metal target can be uniformly knocked off.

[0056] In this embodiment, the alkali metal target can be a cylindrical horizontal rotating target, which can improve the utilization rate of alkali metal on the target.

[0057] Figure 2 This is an ion implantation device for copper indium gallium selenide (CIGS) thin films, as illustrated in an exemplary embodiment. Figure 2As shown, the release port 121 is located at the top of the ion containment cavity 12; the ion acceleration component 14 further includes: a coil 142, spirally wound around the outer wall of the ion containment cavity 12; and a pulse power interface 143, which is externally connected to a pulse power source, enabling the pulse power interface 143 to provide pulse power. The pulse power interface 143 allows the two ends of the pulse power source to be connected to the two ends of the coil 142 respectively, so as to generate a magnetic field in the coil 142. The magnetic field is used to accelerate the alkali metal ions in the ion containment cavity 12, so that the alkali metal ions are ejected from the release port 121.

[0058] Here, after the ion generating component 13 generates alkali metal ions in the ion receiving cavity 12, the magnetic field generated by the coil 142 wound around the ion receiving cavity 12 can exert a force on the alkali metal ions to move towards the substrate 20 on which the CIGS thin film is formed. The speed gradually increases during the distance to the CIGS thin film of the substrate 20, so that the alkali metal ions are ejected from the release port 121 at a certain speed.

[0059] Here, the magnetic field strength formed by the coil can be controlled by controlling the current provided by the pulse power interface 143, thereby controlling the velocity of the alkali metal ions. This causes the alkali metal ions generated in the ion accommodating cavity 12 to be injected at a preset velocity onto the CIGS film on the substrate 20 of the transmission member 15. The different injection velocities of the alkali metal ions result in different depths into the CIGS film on the substrate 20 where the CIGS film is formed. By combining this with the number of alkali metal ions generated, a preset number of alkali metal ions can be injected into the CIGS film at a preset depth, forming a perfectly distributed alkali metal ion gradient in the CIGS film.

[0060] This embodiment can accelerate alkali metal ions by using the magnetic field generated after the coil wound around the outside of the ion-containing cavity is energized, so that the alkali metal ions are ejected at a preset speed, which is simple to achieve.

[0061] In one possible implementation, the ion acceleration component 14 further includes a grounded metal plate 144 located between the opposite surface of the CIGS film surface of the substrate 20 on which the CIGS film is formed and the top of the process chamber, and parallel to the substrate 20 on which the CIGS film is formed.

[0062] Here, the grounded metal plate 144 can serve as a target for the movement of alkali metal ions, guiding the movement of the alkali metal ions. Since the grounded metal plate 144 is located on the opposite side of the CIGS thin film of the substrate 20, the alkali metal ions will be absorbed by the CIGS thin film on the front side of the substrate 20 where the CIGS thin film is formed as they move toward the grounded metal plate 144.

[0063] In this embodiment, a grounding metal plate parallel to the substrate can be placed between the opposite side of the CIGS film on the substrate to the top of the process chamber to guide the alkali metal ions toward the CIGS film on the substrate.

[0064] In one possible implementation, Figure 3 This is an ion implantation device for copper indium gallium selenide (CIGS) thin films, as illustrated in an exemplary embodiment. Figure 3 As shown, the ion implantation device includes two ion-containing chambers 12 and two ion-generating components 13 located in the two ion-containing chambers 12 respectively; wherein the release ports 121 of the two ion-containing chambers 12 are opposite each other at a certain angle.

[0065] like Figure 3 As shown, the ion acceleration component 14 can be a particle collider. The particle collider is provided with an input port and an output port 141. The input port is connected to the release port 121 of the two ion accommodating cavities 12. The particle collider is used to accelerate and collide the alkali metal ions input from the two ion accommodating cavities 12 through the input port, and to eject the collided alkali metal ions from the output port 141 and shoot them toward the CIGS thin film on the substrate 20.

[0066] Here, the ion generating component 13 within the ion accommodating cavity 12 can be... Figure 2 The ion generating components 13 shown include an alkali metal target, a DC pulse power supply interface connected to a DC pulse power supply, and a conduit. In this way, PVD (Physical Vapor Deposition) technology can be used. Under the power supply of the DC pulse power supply, the inert gas such as argon introduced through the conduit is accelerated and strikes the alkali metal target. After the alkali metal ions on the alkali metal target are knocked down by the argon ions, they form alkali metal ions with a certain velocity, which can be ejected from the release port 121 of the ion accommodating cavity 12. The two beams of alkali metal ions generated by the two ion generating components 13 are emitted from the release ports 121 of the two ion accommodating chambers 12, and can then be injected into the input port of the particle collider. At this time, the particle collider can accelerate the injected alkali metal ions. Since the release ports 121 of the two ion accommodating chambers 12 are opposite each other at a certain angle, the two beams of alkali metal ions after acceleration can collide. By setting the angle of the release ports 121 of the two opposite ion accommodating chambers 12, the alkali metal ions after collision can be emitted from the output port 141 and shot towards the CIGS thin film on the substrate.

[0067] This embodiment can accelerate the generated alkali metal ions through high-energy particle collisions, which is simple to achieve.

[0068] This embodiment also provides a method for manufacturing a solar cell. Figure 4 This is a schematic flowchart illustrating a method for manufacturing a solar cell according to an exemplary embodiment, such as... Figure 4 As shown, the method for manufacturing the solar cell includes the following steps 401 to 403.

[0069] In step 401, a back electrode layer is deposited on the substrate.

[0070] In step 402, a CIGS thin film is fabricated on the back electrode layer to form a CIGS thin film substrate.

[0071] In step 403, a preset number of alkali metal ions are generated, and the alkali metal ions are directed toward the CIGS thin film at a preset speed to form a CIGS thin film substrate implanted with the alkali metal ions.

[0072] Here, a back electrode layer can be deposited on the substrate first, and then a CIGS thin film can be fabricated on the back electrode layer. This CIGS thin film can be fabricated by methods such as co-evaporation, sputtering-selenization, and electrodeposition. After the CIGS thin film is formed on the substrate, the required alkali metal ions can be precisely implanted into the CIGS thin film on the substrate using the aforementioned ion implantation equipment.

[0073] Here, a preset number of alkali metal ions can be generated by the ion generating component 13 in the aforementioned ion implantation device, precisely controlling the concentration of alkali metal ions injected into the CIGS thin film. The ion accelerating component 14 in the same device then injects the alkali metal ions generated by the ion generating component 13 into the CIGS thin film at a preset speed, precisely controlling the depth of alkali metal ion injection into the CIGS thin film. This allows for precise control of both injection depth and concentration, resulting in a perfectly distributed alkali metal ion gradient. Under high-microscopic conditions, a near-perfect alkali metal gradient distribution within the CIGS thin film can be observed, achieving the following optimal effects: 1) promoting the preferential formation of copper indium selenide (CIGS) compounds, displacing gallium elements from diffusing to the back electrode layer on the substrate, which is beneficial for deepening the photosensitive layer; 2) passivating CIGS lattice and surface defects, thereby increasing the hole carrier concentration; 3) the reactivity of alkali metal ions is beneficial for the bonding activity between the back electrode layer and the CIGS thin film, resulting in more pronounced PN junction differentiation, thus increasing the open-circuit voltage of the CIGS thin-film solar cell. This better realizes the power enhancement effect of alkali metal ions on CIGS.

[0074] This embodiment utilizes an ion implantation device to implant alkali metal ions into a CIGS thin film using ion implantation technology. This ion implantation technology exhibits excellent uniformity (especially on large-area substrates), optimizing the problem of poor uniformity in alkali metal ion distribution. Furthermore, this method can precisely control the desired distribution gradient and concentration of alkali metal ions by controlling the ion velocity and quantity, resulting in a perfectly distributed alkali metal ion gradient, thereby enhancing the performance of the CIGS thin film. Moreover, the ion implantation method does not require the use of sodium fluoride, thus eliminating the formation of fluorides and preventing harm to human health.

[0075] In one possible implementation, Figure 5 This is an exemplary embodiment illustrating a method for manufacturing a solar cell, such as... Figure 5 As shown, the above-mentioned method for manufacturing solar cells also includes the following step 404.

[0076] In step 404, the CIGS thin film substrate implanted with alkali metal ions is subjected to annealing treatment.

[0077] Here, when alkali metal ions are implanted into the CIGS thin film of the substrate using ion implantation technology, the alkali metal ions can damage the CIGS lattice that would otherwise be destroyed by the impact of the CIGS thin film. Therefore, in order to repair the CIGS lattice damaged by the impact of alkali metal ions, this embodiment can perform an annealing process after implanting alkali metal ions.

[0078] It should be noted that the parameters for annealing repair can be referenced from the relevant requirements for CIGS film annealing.

[0079] In this embodiment, the CIGS thin film substrate implanted with alkali metal ions can be annealed to repair the CIGS lattice damaged by alkali metal ion bombardment.

[0080] In one possible implementation, the annealing temperature during the annealing process ranges from 500 to 600°C; the annealing time ranges from 10 to 40 minutes.

[0081] Preferably, the annealing temperature is 550°C, and the longer the annealing time, the better. However, the time should not be too long to avoid wasting time. Therefore, in this embodiment, the annealing time ranges from 10 to 40 minutes. For example, the annealing temperature can be 550°C and the annealing time can be 30 minutes; or the annealing temperature can be 600°C and the annealing time can be 10 minutes; or the annealing temperature can be 500°C and the annealing time can be 40 minutes.

[0082] In one possible implementation, the alkali metal ion includes sodium ions.

[0083] Here, the alkali metal can be sodium, potassium, or other alkali metals. Considering cost and performance, it is preferable that the alkali metal in this embodiment is sodium, which is low in cost and has good performance.

[0084] Other embodiments of the invention will readily occur to those skilled in the art upon consideration of the specification and practice of the disclosure herein. This application is intended to cover any variations, uses, or adaptations of the invention that follow the general principles of the invention and include common knowledge or customary techniques in the art not disclosed herein. The specification and examples are to be considered exemplary only, and the true scope and spirit of the invention are indicated by the following claims.

[0085] It should be understood that the present invention is not limited to the precise structure described above and shown in the accompanying drawings, and various modifications and changes can be made without departing from its scope. The scope of the invention is limited only by the appended claims.

Claims

1. An ion implantation apparatus applied to a copper indium gallium selenide (CIGS) thin film fabrication device, the fabrication device comprising a process chamber for forming a CIGS thin film on a substrate to obtain a CIGS thin film substrate, characterized in that, The ion implantation device includes: An ion-containing cavity is located within the process cavity. The ion-containing cavity includes a release port located below the CIGS thin film substrate and facing the CIGS thin film. An ion generating component is located within the ion accommodating cavity and is used to generate alkali metal ions within the ion accommodating cavity. An ion acceleration component, located inside the process chamber, is used to accelerate the alkali metal ions generated by the ion generating component, so that the alkali metal ions are ejected from the release port and directed towards the CIGS film. The ion generating component includes: An alkali metal target is located within the ion-containing cavity; A DC pulse power interface is used to connect a DC pulse power supply. The anode of the DC pulse power interface is connected to the housing of the process chamber, and the cathode of the DC pulse power interface is connected to the alkali metal target. A conduit, one end of which is connected to the ion containment chamber and the other end of which is connected to the outside of the process chamber, is used to introduce inert gas into the ion containment chamber; The alkali metal target material includes a horizontal target material; The horizontal target material includes a cylindrical horizontal rotating target material; the ion implantation device further includes: Controller; A motor, connected to the controller and the cylindrical horizontal rotating target, is used to drive the cylindrical horizontal rotating target to rotate under the control of the controller; The release port is located at the top of the ion-containing cavity; the ion acceleration component further includes: The coil is spirally wound around the outer wall of the ion-containing cavity; A pulse power interface is used to connect a pulse power supply. The two ends of the pulse power interface are respectively connected to the two ends of the coil to generate a magnetic field. The magnetic field is used to accelerate the alkali metal ions in the ion accommodating cavity and cause the alkali metal ions to be ejected from the release port. The ion acceleration component further includes: A grounding metal plate is located between the opposite surface of the CIGS thin film surface of the CIGS thin film substrate and the top of the process cavity, and is parallel to the CIGS thin film substrate. The ion implantation device includes two ion-containing chambers and two ion-generating components located within the two ion-containing chambers respectively; wherein the release ports of the two ion-containing chambers are opposite each other at a certain angle; The ion acceleration component includes a particle collider, which has an input port and an output port. The input port is connected to the release ports of the two ion containment cavities. The particle collider is used to accelerate and collide the alkali metal ions generated in the two ion containment cavities that are input from the input port, and to eject the collided alkali metal ions from the output port towards the CIGS thin film.

2. A method for manufacturing a solar cell, wherein the method employs the ion implantation equipment described in claim 1, characterized in that, The method includes: Deposit a back electrode layer on the substrate; A CIGS thin film is fabricated on the back electrode layer to form a CIGS thin film substrate. Alkali metal ions are generated at a preset speed, and the alkali metal ions are directed toward the CIGS thin film at the preset speed to form a CIGS thin film substrate implanted with the alkali metal ions.

3. The method for manufacturing a solar cell according to claim 2, characterized in that, After the step of directing the alkali metal ions toward the CIGS thin film at a preset velocity, the method further includes: The CIGS thin film substrate implanted with alkali metal ions is annealed.

4. The method for manufacturing a solar cell according to claim 3, characterized in that, The annealing temperature ranges from 500 to 600°C, and the annealing time ranges from 10 to 40 minutes.

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