Removable and replaceable processing accessory

Abstract

Movable and removable processing components are disclosed. Aspects of the disclosure generally relate to methods and apparatus for adjusting edge ring position and for removing or replacing one or more components of a processing assembly of a processing chamber. The processing assembly includes one or more of an edge ring, a support ring, a slide ring, and other consumable or degradable components.

Description

TECHNICAL FIELD

[0001] Aspects of the present disclosure generally relate to apparatuses and methods for edge ring and / or support ring replacement in a processing chamber, such as those used in semiconductor processing. BACKGROUND

[0002] In a processing chamber, such as an etch chamber, a substrate is etched while held in place by electrostatic clamping. Typically, one or more circular parts, referred to as edge rings, process rings, support rings, etc., are positioned around the outer diameter of the substrate in order to protect the upper surface of the electrostatic chuck from being etched by the etch chemistry or to facilitate processing of the substrate. These rings are made of several different materials and can have different shapes, both of which affect the processing uniformity near the periphery of the substrate. During processing, these rings are etched over time, resulting in a change in shape and a change in processing uniformity.

[0003] To address the change in processing uniformity due to degradation, these rings are replaced according to a schedule. Traditionally, to replace one of these rings, the processing chamber is opened to allow an operator to access the inner ring. However, this process is time consuming and can take up to 24 hours for the process to come back online due to venting of the processing chamber.

[0004] Therefore, there is a need for new methods and apparatuses to replace consumable parts within a processing chamber. SUMMARY

[0005] Aspects of the present disclosure generally relate to apparatuses and methods for consumable part replacement, such as process kit rings and / or support rings and / or edge rings, within a processing chamber.

[0006] In one example, a process kit for a substrate support includes a skid ring having a body defined by an inner diameter and an outer diameter, the body having one or more openings formed therethrough, wherein each of the one or more openings can have an axis that is parallel to an axis of a central opening of the body. The process kit also includes a support ring having a stepped upper surface with a radially inward portion that is raised above a radially outward portion, the support ring having an outer diameter that is less than the inner diameter of the body of the skid ring. The process kit further includes an edge ring having a flat upper surface and a flat lower surface, the edge ring having an inner diameter that is less than the outer diameter of the support ring and an outer diameter that is greater than the outer diameter of the support ring.

[0007] In another example, a process kit for a substrate support includes a slip ring having a body defined by an inner diameter and an outer diameter, the body having one or more openings formed therethrough, where each of the one or more openings can have an axis that is parallel to an axis of a central opening of the body. The process kit also includes a support ring having a stepped upper surface where a radially inward portion is raised above a radially outward portion, the support ring having an outer diameter that is greater than the inner diameter of the body of the slip ring, and one or more openings formed through the support ring, where each of the one or more openings formed through the support ring can be aligned with one of the one or more openings formed through the body of the slip ring. The process kit further includes an edge ring having a flat upper surface and a flat lower surface, the edge ring having an inner diameter that is less than the outer diameter of the support ring, and an outer diameter that is greater than the outer diameter of the support ring.

[0008] In another example, a substrate support includes an electrostatic chuck pedestal, a puck positioned above the electrostatic chuck pedestal, and a process kit for the substrate support. The process kit for the substrate support includes a slip ring having a body defined by an inner diameter and an outer diameter, the body having one or more openings formed therethrough, where each of the one or more openings can have an axis that is parallel to an axis of a central opening of the body. The process kit also includes a support ring having a stepped upper surface where a radially inward portion is raised above a radially outward portion, the support ring having an outer diameter that is less than the inner diameter of the body of the slip ring. The process kit further includes an edge ring having a flat upper surface and a flat lower surface, the edge ring having an inner diameter that is less than the outer diameter of the support ring, and an outer diameter that is greater than the outer diameter of the support ring.

[0009] In another example, a method includes actuating a plurality of lift pins vertically upward, each lift pin including a first diameter at an upper portion thereof and a second diameter greater than the first diameter at a lower portion thereof, the actuating including guiding the upper portion of the lift pins through corresponding openings in a support ring; actuating an edge ring positioned above the support ring vertically; transferring the edge ring to a carrier; and removing the edge ring from a process chamber. BRIEF DESCRIPTION OF DRAWINGS

[0010] So that the manner in which the above-recited features of the present disclosure can be understood in detail, a more particular description, briefly summarized above, can be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments and are therefore not to be considered limiting of its scope, for the present disclosure can admit to other equally effective embodiments.

[0011] Figures 1A-1J is a partial schematic cross-sectional view of a process chamber during removal of a ring from the process chamber in accordance with aspects of the present disclosure.

[0012] Figure 1Kis a top plan view of a carrier according to an aspect of the disclosure. Figures 1A-1J is a top plan view of a carrier according to an aspect of the disclosure.

[0013] Figures 2A-2B is a schematic partial view of a substrate support during a ring removal operation according to another aspect of the disclosure.

[0014] Figures 3A-3C is a schematic partial view of a substrate support during a ring removal operation according to another aspect of the disclosure.

[0015] Figure 4A is a schematic top plan view of a carrier according to an aspect of the disclosure.

[0016] Figure 4B is a schematic bottom plan view of a carrier according to an aspect of the disclosure. Figure 4A

[0017] Figure 5A is a schematic top plan view of a carrier according to an aspect of the disclosure.

[0018] Figure 5B is a schematic cross-sectional view of a carrier according to an aspect of the disclosure. Figure 5A

[0019] Figure 6 shows a processing system according to an aspect of the disclosure.

[0020] For ease of understanding, the same reference numbers will be used in different drawings to designate the same elements shared by the drawings. It is contemplated that elements and features of one embodiment can be beneficially incorporated into other embodiments without further recitation. DETAILED DESCRIPTION

[0021] Aspects of the disclosure generally relate to using a carrier to remove or replace one or more components of a processing assembly of a processing chamber. The one or more components of the processing assembly include an edge ring, a support ring, a slide ring, and other consumable or degradable components.

[0022] Figures 1A-1J is a partial schematic cross-sectional view of a processing chamber 107 during removal of an edge ring 161 from the processing chamber 107 according to aspects of the disclosure. While conventional processing chambers require disassembly by an operator to replace a corroded component such as the edge ring 161, the processing chamber 107 is configured to facilitate replacement of the edge ring 161 without disassembly of the processing chamber 107. Disassembly of the processing chamber 107 is avoided by transferring the edge ring 161 through a port 108 of the processing chamber 107.

[0023] ​​The processing chamber 107 can be any of an etch chamber, a deposition chamber including atomic layer deposition, chemical vapor deposition, physical vapor deposition, or plasma enhanced versions thereof, an anneal chamber, and the like, which utilizes a substrate support 140 therein. Exemplary processing chambers include those produced by Applied Materials, Inc., of Santa Clara, California.

[0024] The processing chamber 107 includes a substrate support 140 (shown in Figure 1B FIG. 1) for receiving a substrate 143 thereon, and a port 108 for entry and exit of the substrate 143. The substrate support 140 includes, for example, an electrostatic chuck to facilitate clamping of a substrate on an upper surface of the substrate support 140. Figure 1B is Figure 1A a partial enlarged view.

[0025] As shown in Figure 1B FIG. 1, the substrate support 140 includes an electrostatic chuck base 141 having a puck 142 disposed thereon. The puck is formed of alumina or aluminum oxide. A substrate 143 (shown in phantom) such as a 200 mm, 300 mm, or 450 mm semiconductor wafer can be positioned on the puck 142 and secured thereon by electrostatic clamping to facilitate processing of the substrate 143 in the processing chamber 107.

[0026] A support ring 145 is positioned around and in contact with the puck 142. The support ring 145 rests in a stepped surface formed at a radially outer side and an upper edge of the puck 142. The support ring 145 includes a stepped upper surface having a radially inner portion 146 that is elevated above a radially outer portion 147. A lower surface 148 of the support ring 145 is parallel to the radially inner portion 146 and the radially outer portion 147. In one example, the lower surface 148 is in contact with a lower portion 180 of the stepped surface formed in the puck 142. In another example, the lower surface 148 is in contact with the lower portion 180 of the stepped surface formed in the puck 142, and additionally, a radially inner sidewall 190 of the support ring 145 is in contact with a perpendicular edge 182 of the stepped surface formed around the puck 142.

[0027] A slip ring 149 is configured to circumferentially surround an electrostatic chuck base 141, a disk 142, and a support ring 145. The slip ring 149 is configured to accommodate a plurality of lifting rods 150, each of which is disposed in a corresponding opening 151 formed in the slip ring 149. Each of the slip ring 149 and the lifting rods 150 can be independently and vertically actuated relative to each other by an actuator (not shown) (such as a stepper motor). A quartz tube 152 is disposed radially outside the slip ring 149. A liner 153 is disposed radially outside the quartz tube 152. A plasma shield 154 is positioned on the upper surface of the liner 153, surrounding the upper end of the quartz tube 152. The plasma shield 154 restricts plasma flow within the processing chamber 107.

[0028] like Figure 1B As shown, the outer diameter defined by the outer edge 193 of the support ring 145 is smaller than the inner diameter defined by the inner edge 183 of the slip ring 149.

[0029] A quartz ring 155 is positioned on a plasma shield 154 and a quartz tube 152. An annular groove 156 is formed in the lower surface of the quartz ring 155 and engages the stepped upper surface 157 of the quartz tube 152. The radially inward portion 158a of the lower surface of the quartz ring 155 is positioned lower than the radially outward portion 158b of the lower surface of the quartz ring 155 (e.g., extending further from the upper surface of the quartz ring 155). The radially outward upper corner 159 of the included quartz ring 155 is rounded; however, other configurations are also contemplated. A stepped surface 160 is formed on the radially inward upper corner of the quartz ring 155 opposite the upper corner 159. The lower portion 192 of the stepped surface 160 engages the edge ring 161.

[0030] Edge ring 161 includes a flat upper surface 162a and a flat lower surface 162b, which are generally parallel to each other. In addition to engaging the stepped surface 160, the flat lower surface 162b of edge ring 161 also engages the upper surface of the radially outward portion 147 of support ring 145. During processing, the upper end 194 of slip ring 149 or the upper end 196 of lifting rod 150 may also engage the flat lower surface 162b of edge ring 161 to raise edge ring 161 from quartz ring 155 and support ring 145. This raising of edge ring 161 can be used to adjust the plasma shell adjacent to the radially outward edge of substrate 143, for example, by compensating for corrosion of edge ring 161. In one example, edge ring 161 may be raised up to a distance of about 2 millimeters (mm). However, after a certain period of time, edge ring 161 may be corroded to the point where edge ring 161 needs to be replaced. Various aspects of this disclosure facilitate the removal and replacement of edge ring 161 via port 108, so that the replacement of edge ring 161 does not require disassembly of processing chamber 107.

[0031] As shown in Figure 1B The inner diameter defined by the inner edge 170 of the edge ring 161 is less than the outer diameter defined by the outer edge 193 of the support ring 145. The outer diameter defined by the outer edge 171 of the edge ring 161 is also greater than the outer diameter defined by the outer edge 193 of the support ring 145. Further, the outer diameter defined by the outer edge 171 of the edge ring 161 is greater than the outer diameter defined by the outer edge 184 of the slide ring 149.

[0032] To remove the edge ring 161, and with reference to Figure 1C and Figure 1D the edge ring 161 is raised by the lift pins 150 to a height above the port 108 to provide space for receiving a carrier 113 (shown in dashed lines in Figure 1D ) under the edge ring 161. The carrier is positioned under the edge ring 161 by a robotic blade, end effector, or the like (not shown in Figure 1D for clarity).

[0033] Referring now to Figure 1E Once the carrier 113 is positioned under the edge ring 161 (e.g., above and concentrically aligned with the substrate support 140), the plurality of lift pins 163 are actuated vertically upward to lift the carrier 113 from the robotic blade (not shown in Figure 1E for clarity). Once the carrier 113 is lifted, the robotic blade is removed from the processing chamber 107. The lift pins 163 are positioned radially inward of the lift pins 150. In one example, three lift pins 163 are used to engage the carrier 113.

[0034] With the carrier 113 supported on the lift pins 163, the lift pins 150 are lowered to position the edge ring 161 on the carrier 113, as shown in Figure 1F The lift pins 150 continue to lower into the substrate support 140 while the edge ring 161 remains on the carrier 113, as shown in Figure 1G With the lift pins 150 recessed into the substrate support, the lift pins 163 are raised upward to lift the carrier 113 and the edge ring 161, as shown in Figure 1H The lift pins 163 are raised to a height sufficient to allow the robotic blade 164 to enter the processing chamber 107, as shown in Figure 1H The robotic blade 164 is positioned under the carrier 113 and the edge ring 161 to facilitate placement of the carrier 113 on the robotic blade 164.

[0035] Once the robotic blade 164 is positioned under the carrier 113, the lift pins 163 are lowered to position the carrier 113 on the robotic blade 164, as shown in Figure 1IThe additional downward movement of the lift pins 163 removes the interference between the robot blade 164 and the lift pins 163. With the lift pins 163 clear of the robot blade 164, the robot blade 164, along with the carrier 113, the edge ring 161, and the optional robot wrist 549, are ready to be removed from the process chamber 107 through the port 108, as shown in Figure 1J The carrier 113 is then moved through the port 108 on the robot blade 164 and transported according to the examples of Figure 6 It is contemplated that a new edge ring 161 can be introduced into the process chamber 107 by the reverse operation.

[0036] Figures 1A-1J One example of an edge ring removal process is shown. However, other examples are also contemplated. For example, with reference to Figure 1E , it is contemplated that the edge ring 161 can be lowered onto the carrier 113 while the carrier 113 is supported on the robot blade. The lift pins 150 can then be lowered to provide space, and the robot with the carrier 113 and edge ring 161 thereon can be removed from the chamber through the port 108. In this example, the carrier does not need to be transported to the lift pins 163 first.

[0037] Aspects herein are not limited to chamber hardware or process components formed from particular materials. For example, it is contemplated that the edge ring 161, the support ring 145, and the slip ring 149, as well as the liner 153, can be formed from one or more materials, including quartz, silicon nitride, aluminum nitride, graphite, silicon carbide, or other ceramic materials. In one example, the edge ring 161 and the support ring 145 are formed from silicon carbide. Other materials are also contemplated.

[0038] Figure 1K is a top plan view of the slip ring 149 shown in Figures 1A-1J The slip ring 149 is a circular component having a central opening 185 defined by a main body 186 having an inner diameter 187 and an outer diameter 188. One or more openings 151 (three are shown) are formed in or through the main body 186 to accommodate the lift pins 150 (shown in Figure 1B ) therein. The openings 151 are axially aligned with the central opening 185. In the example shown, the openings 151 have axes that are parallel to the axis of the central opening 185.

[0039] Referring back to Figure 1BAccording to aspects herein, the plasma sheath is tunable. For example, during processing, the edge ring 161 can erode, which can affect the flatness of the plasma sheath, particularly at the radially outward edge of the substrate 143 (e.g., above adjacent the edge ring 161). To compensate for erosion, the edge ring 161 can be raised by actuating the slide ring 149 to a selected height.

[0040] To further facilitate plasma sheath tunability, the edge ring 161 can be coupled to an RF source of the processing chamber 107. In one example, the edge ring 161 is coupled to the RF source via a first path C RF1 and a second path C RF2 . The first path C RF1 is coupled from the electrostatic chuck base 141 through the puck 142 and the support ring 145, while the second path C RF2 is coupled from the electrostatic chuck base 141 through the slide ring 149. In this example, the slide ring 149 can be formed of a conductive material, such as a metal like aluminum, to facilitate constant or nearly constant RF coupling via the second path C RF2 . The constant RF coupling through the second path C RF2 results in a constant plasma sheath thickness across the surface of the substrate 143. In contrast, when the edge ring 161 is raised, the rod-based or non-conductive sleeve-based tuning of the edge ring 161 results in RF decoupling, which can cause the plasma sheath to collapse, resulting in non-uniformity of the plasma and processing.

[0041] Additionally, aspects of the disclosure further facilitate constant RF coupling by selecting the RF power such that the capacitance of the second path C RF2 is much greater than the capacitance of the plasma sheath. By maintaining the capacitance of the second path C RF2 much greater than the capacitance of the plasma sheath, the RF coupling is maintained, which results in uniformity of the plasma sheath during processing. Moreover, when the capacitance of the second path C RF is maintained much greater than the capacitance of the plasma sheath, the voltage on the edge ring 161 remains constant. To achieve the desired capacitance along the second path C RF2 , the width of the gap between the radially outward edge 197 of the electrostatic chuck base 141 and the radially inward edge 198 of the slide ring 149 can be selected to tune the capacitance. Other gaps within or between opposing components can also be tuned to further tune the capacitance and / or RF path. Although in the example shown in FIG. 1, the first path C Figures 1A-1K , Figure 2A , Figure 2B , Figures 3A-3C , Figure 4A , Figure 4B , Figure 5A , Figure 5B and Figure 6Gaps are shown between certain components in FIGS. 1-3, but it is contemplated that the gaps can be eliminated in some embodiments such that one or more of the components are in contact with each other. Additionally, although certain components are shown in contact with each other in FIGS. 1-3, it is contemplated that there can be gaps between the components. For example, gaps can be included to prevent or reduce the likelihood of particle generation, to allow movement of the components, or to reduce friction between the components during movement. To further achieve the desired capacitance and RF coupling, the edge ring 161 can have an electrical resistivity of less than 50 ohm.cm, such as from about 1 ohm.cm to about 40 ohm.cm. In this example, the edge ring 161 can be formed of silicon or silicon carbide. Figures 1A-1K 、 Figure 2A 、 Figure 2B 、 Figures 3A-3C 、 Figure 4A 、 Figure 4B 、 Figure 5A 、 Figure 5B and Figure 6 Gaps are shown between certain components in FIGS. 1-3, but it is contemplated that the gaps can be eliminated in some embodiments such that one or more of the components are in contact with each other. Additionally, although certain components are shown in contact with each other in FIGS. 1-3, it is contemplated that there can be gaps between the components. For example, gaps can be included to prevent or reduce the likelihood of particle generation, to allow movement of the components, or to reduce friction between the components during movement. To further achieve the desired capacitance and RF coupling, the edge ring 161 can have an electrical resistivity of less than 50 ohm.cm, such as from about 1 ohm.cm to about 40 ohm.cm. In this example, the edge ring 161 can be formed of silicon or silicon carbide.

[0042] Although not shown, it is contemplated that the processing chamber 107 can also include one or more gas diffusers, plasma generators, or other components (not shown) to facilitate substrate processing. To this end, the substrate support 140 is not limited to use with a particular chamber component unless otherwise explicitly stated herein.

[0043] Figure 2A and Figure 2B is a schematic partial view of a substrate support 240 during a ring removal operation in accordance with another aspect of the disclosure. The substrate support 240 is similar to the substrate support 140 (shown in FIG. 1) however, the substrate support 240 is configured to allow the support ring 245 to be removed simultaneously with the edge ring 261 in addition to removing the edge ring 261. Figure 1B

[0044] To facilitate removal of both the support ring 245 and the edge ring 261, the support ring 245 extends radially outward above the position of the lift pins 150 (one is shown). Thus, when raised, the lift pins 150 engage the lower surface 265a of the support ring 245. Continued vertical movement of the lift pins 150 causes the support ring 245 and the edge ring 261 positioned thereon to be lifted. Once the support ring 245 and the edge ring 261 are raised to a sufficient height above the puck 142, the carrier 113 is positioned to receive the support ring 245 and the edge ring 261 as shown in FIG. 4B. The support ring 245 and the edge ring 261 positioned thereon are disposed on the carrier 113 and then the carrier 113 is removed from the processing chamber as similarly described with reference to FIG. 3B. Figure 2B Figures 1E-1J

[0045] ​​​To facilitate adjustment of the plasma shell during processing without disturbing the support ring 245, the slip ring 249 can be positioned to raise the edge ring 261, such as... Figure 2A As shown in the diagram, slip ring 249 has a body 286. Slip ring 249 is similar to slip ring 149 described above, but includes an extension 266. Extension 266 is located at the upper end of slip ring 249 and extends radially outward from the body 286 of slip ring 249. Extension 266 includes a horizontal portion 267a and a vertical portion 267b. Horizontal portion 267a extends radially outward from the body 286 of slip ring 249. Vertical portion 267b extends upward from horizontal portion 267a. Vertical portion 267b is also axially aligned with the body 286 of slip ring 249, as shown in the diagram. Figure 2A As shown in the example. In the example shown, the vertical portion 267b has an axis parallel to the axis of the body 286 of the slip ring 249. Actuation of the slip ring 249 causes the extension 266 to contact the lower surface 262b of the edge ring 261 to facilitate lifting of the edge ring 261. When the slip ring 249 is in its lowest position, a vertical gap 268 exists between the lower surface 265a of the support ring 145 and the upper end 294 of the slip ring 249. The vertical gap 268 allows for some vertical movement of the slip ring 249 without causing the slip ring 249 to contact the support ring 245. In one example, the vertical gap 268 is greater than approximately 2 mm. Figure 2A As shown, the outer diameter defined by the outer edge 293 of the support ring 245 can be larger than the inner diameter defined by the inner edge 283 of the slip ring 249. The inner diameter defined by the inner edge 295 of the vertical portion 267b can be larger than the outer diameter defined by the outer edge 293 of the support ring 245. Furthermore, the outer diameter defined by the outer edge 297 of the vertical portion 267b can be smaller than the outer diameter defined by the outer edge 271 of the edge ring 261. To accommodate the extension 266 of the slip ring 249, a quartz ring 255 is conceived. The quartz ring 255 is similar to the quartz ring 155 (…). Figure 1B (As shown in the diagram), however, the quartz ring 255 includes an increased inner diameter. Therefore, the portion 269 located radially inside the annular groove 156 includes a reduced width W compared to the corresponding portion of the quartz ring 155.

[0046] Figures 3A-3CThis is a schematic partial view of the substrate support 340 during a ring removal operation, according to another aspect of this disclosure. The substrate support 340 is similar to the substrate support 240, but allows for the independent removal and / or installation of the edge ring 361 and the support ring 345. The slip ring 349 includes one or more openings 351 formed therein. To facilitate the independent removal and / or installation of the edge ring 361 and the support ring 345, the support ring 345 includes a plurality of openings 370 formed therein. Each opening 370 can be aligned with a corresponding lifting rod 350 to allow the lifting rod 350 to pass through it. The lifting rod 350 is similar to the lifting rod 150 described above; however, the lifting rod 350 includes a lower portion 371a having a first diameter and an upper portion 371b having a second diameter smaller than the first diameter. The second diameter is smaller than the diameter of the opening 370, while the first diameter is larger than the diameter of the opening 370. Therefore, the upper portion 371b can be accommodated within the opening 370, while the lower portion 371a cannot be accommodated within the opening 370. The first diameter transitions to the second diameter at the shoulder 372. Figure 3A As shown, each of the openings 370 formed in the support ring 345 can be aligned with one of the openings 351 formed in the slip ring 349.

[0047] refer to Figure 3B and Figure 3C Edge ring 361 can be removed independently of support ring 345. Independent removal is advantageous when using edge ring 361, which corrodes faster than support ring 345. Therefore, when removing the corroded edge ring 361, it is not necessary to remove and / or replace the support ring 345, which still has remaining service life. This saves time and materials.

[0048] Figure 3B The removal of edge ring 361 is schematically illustrated. To remove edge ring 361, lifting rod 350 is actuated upward through opening 370 in support ring 345, causing edge ring 361 to rise from substrate support 340. In the example shown, actuation of edge ring 361 does not cause movement of support ring 345. Lifting rod 350 rises to a first height, the first height being the robot blade ( Figure 3BThe carrier 313 (not shown in FIG. 3A) and the support ring 345 provide space beneath the edge ring 361. The carrier 313 is similar to the carrier 113, but includes a multi-stepped surface 375 around its perimeter. The multi-stepped surface 375 includes a first stepped surface 376a for supporting the edge ring 361 thereon, and a second stepped surface 376b for supporting the support ring 345 thereon. The radially inwardly facing sidewall 376c of the first stepped surface 376a can have an outer diameter approximately equal to the inner diameter of the edge ring 361, such as about 95% to about 100% of the inner diameter of the edge ring 361. For example, the outer diameter of the radially inwardly facing sidewall 376c of the first stepped surface 376a can be about 98% to 100%, or about 99% to 100% of the inner diameter of the edge ring 361. Similarly, the second stepped surface 376b has an outer diameter approximately equal to the inner diameter of the support ring 345; such as about 95% to 100%, or about 98% to 100%, or about 99% to 100% of the inner diameter of the support ring 345.

[0049] With the carrier 313 positioned beneath the edge ring 361, the edge ring 361 is transferred to the carrier 313 and removed from the processing chamber 107, as described above with reference to FIG. 3B. The edge ring 361 is then transferred to the carrier 313 and removed from the processing chamber 107, as described above with reference to FIG. 3B. Figures 1E-1J Similarly described. With the carrier 313 and the edge ring 361 removed from the processing chamber 107, the lift pins 350 are further actuated upward. The shoulders 372 of the lift pins 350 engage the lower surface 348 of the support ring 345. Continued elevation of the lift pins 350 lifts the support ring 345 from the substrate support 340 to a height sufficient to accommodate the carrier 313 between the support ring 345 and the substrate support 340, as shown in FIG. 3C. The lift pins 350 are then retracted, and the carrier 313 is positioned over the substrate support 340 to receive the support ring 345 on its stepped surface 376b, as shown in FIG. 3D. Figure 3C It is contemplated that the lengths of the upper portion 371b and the lower portion 371a can be selected to provide the desired positioning of the edge ring 361 and the support ring 345 within the processing chamber, while still allowing sufficient range of motion. Once the support ring 345 is lifted, the carrier 313 is positioned over the substrate support 340 to receive the support ring 345 on its stepped surface 376b. The carrier 313 and the support ring 345 are then removed from the processing chamber 107, as described above with reference to FIG. 3B. Figures 1E-1J Similarly described.

[0050] Figure 4A is a schematic top plan view of a carrier 113 according to an aspect of the present disclosure. Figure 4B is Figure 4AFIG. 6 is a schematic bottom plan view of a carrier 113. The carrier 113 is a semi-circular plate 416 having a perimeter defined by two parallel edges 414a, 414b and two opposing curved edges 415a, 415b connecting the two parallel edges 414a, 414b. The curved edges 415a, 415b facilitate lateral support of an edge ring positioned thereon, while the two parallel edges 414a, 414b allow the carrier 113 to be housed in a processing chamber that was not originally designed to house the carrier 113 therein. For example, the two parallel edges 414a, 414b can facilitate actuation of a lift pin, such as the lift pin 150, within the processing chamber without interfering with the carrier 113 when the carrier 113 is positioned within the processing chamber. The carrier 113 also includes a first arcuate support structure 430a and a second arcuate support structure 430b.

[0051] The semi-circular plate 416 includes a central opening 417 and one or more semi-circular openings (three shown) 418a positioned concentrically about the central opening 417. Additional semi-circular openings 418b are positioned concentrically about the one or more semi-circular openings 418a. The semi-circular openings 418a, 418b facilitate a reduction in weight of the carrier 113, thereby allowing the carrier 113 to be used on existing transfer equipment that was not originally designed for handling weights in excess of the weight of a semiconductor wafer. In one example, the semi-circular plate 416 is formed of one or more materials including carbon fiber, graphite, silicon carbide, graphite-coated silicon carbide, silicon nitride, silicon oxide, alumina, and the like. Other materials are also contemplated.

[0052] The semi-circular plate 416 also includes a first plurality of sockets 419 disposed therein. The first plurality of sockets 419 are sized and configured to receive a lift pin, such as the lift pin 163, therein to facilitate actuation of the carrier 113 within a processing chamber. The first plurality of sockets 419 are each positioned at a same radial distance from a center of the semi-circular plate 416. In one example, the first plurality of sockets 419 are positioned at a radius that is greater than a radius of the semi-circular openings 418a but less than a radius of the semi-circular openings 418b.

[0053] The semi-circular plate 416 also includes a second plurality of sockets 425 (three shown) disposed therein. The sockets 425 are each configured to engage a support structure, such as a robotic blade. Engagement of the sockets 425 by the support structure reduces or prevents relative movement between the carrier 113 and the support structure during transfer of the carrier 113. For example, the support structure can include corresponding male plugs to be received within the sockets 425.

[0054] Each of the sockets 419, 425 can be formed of one or more of metal, silicon carbide, graphite, alumina, silicon nitride, silicon oxide, polyethylene terephthalate, or a ceramic material. Other materials are also contemplated. In one example, the sockets 419, 425 are formed of a soft polymeric material, such as acetal, PTFE, or a ceramic material such as silicon carbide to reduce the generation of particulates.

[0055] Figure 5A is a schematic top plan view of the carrier 113 on which the edge ring 410 is supported. Figure 5B is Figure 5A a schematic cross-sectional view. As shown in Figure 5A and Figure 5B , the edge ring 410 is disposed on and supported by the first arcuate support structure 430a and the second arcuate support structure 430b. The lower surface 432 of the edge ring 410 contacts the support surface 433, while the radially inward edge 420 of the edge ring 410 contacts the vertical wall 434 of the first arcuate support structure 430a and the second arcuate support structure 430b. In the illustrated example, the edge ring 410 inner diameter is less than the first arcuate support structure 430a and the second arcuate support structure 430b outer diameter, and the edge ring 410 outer diameter is greater than the first arcuate support structure 430a and the second arcuate support structure 430b outer diameter. Additionally, the upper surface 440 of the edge ring 410 is disposed above the upper surface 444 of the first arcuate support structure 430a and the second arcuate support structure 430b. In one example, one or both of the first arcuate support structure 430a and the second arcuate support structure 430b can include features such as flat surfaces for engaging an electrostatic chuck or other substrate support to facilitate alignment therewith.

[0056] In the example shown in Figure 4B , each of the first arcuate support structure 430a and the second arcuate support structure 430b (both shown in Figure 4A ) includes a male extension 431 that engages an opening (not shown in Figure 4B ) formed through the semicircular plate 416. In one example, the opening and the male extension 431 and the first arcuate support structure 430a and the second arcuate support structure 430b are positioned radially outward of the socket 425. The radius of curvature of each of the first arcuate support structure 430a and the second arcuate support structure 430b can be approximately equal to the radius of curvature of the curved edges 415a, 415b.

[0057] Figure 6A processing system 600 is shown in accordance with an aspect of the present disclosure. The processing system 600 includes a factory interface 601 to which a plurality of cassettes 602 can be coupled for transfer of substrates into the processing system 600. The processing system 600 further includes first vacuum ports 603a, 603b that couple the factory interface 601 to respective degas chambers 604a, 604b. Second vacuum ports 605a, 605b are coupled to the respective degas chambers 604a, 604b and are disposed between the degas chambers 604a, 604b and a transfer chamber 606 to facilitate transfer of substrates into the transfer chamber 606. The transfer chamber 606 includes a plurality of process chambers 607 disposed about and coupled thereto. The process chambers 607 are coupled to the transfer chamber 606 by respective ports 608, such as slit valves or the like. A controller 609 controls various aspects of the processing system 600.

[0058] Figure 6 Transfer of the edge ring 610 into the process chambers 607 is shown schematically. In accordance with an aspect of the present disclosure, the edge ring 610 is removed from one of the plurality of cassettes 602 via a factory interface robot 611 that is located in or directly loads into the factory interface 601. The factory interface robot 611 transfers the edge ring 610 through one of the first vacuum ports 603a, 603b and into the respective degas chamber 604a, 604b. A transfer chamber robot 612 located in the transfer chamber 606 removes the edge ring 610 from one of the degas chambers 604a, 604b through the second vacuum port 605a or 605b. The transfer chamber robot 612 moves the edge ring 610 into the transfer chamber 606 where the edge ring 610 can be transferred to the desired process chamber 607 through the respective port 608. Although not shown in FIG. 6 for clarity, transfer of the edge ring 610 occurs when the edge ring 610 is positioned on the carrier 113. Removal of the edge ring 610 from the process chamber 607 occurs in reverse order. Figure 6

[0059] Figure 6 ​One example of edge ring transport is shown, however, other examples are contemplated. For example, it is contemplated that the edge rings 610 can be manually loaded into the transport chamber 606. The edge rings 610 can be loaded from the transport chamber 606 into the processing chamber 607 by the transport chamber robot 612. Alternatively or additionally, the edge rings can be loaded in a support unit. In contrast to the support unit shown, an additional support unit can be positioned in communication with the factory interface 601. When two support units or multiple cassettes 602 are used, it is contemplated that one SSP or cassette 602 can be used for untreated edge rings 610 while another support unit or cassette 602 can be used to receive treated edge rings 610. Benefits described herein include removal of chamber hardware without disassembly of the chamber. Thus, preventative maintenance can be performed with reduced downtime.

[0060] While Figure 6 Transport of edge rings 610 through the processing system 600 is shown, however, other consumable parts such as processing rings, support rings, and the like can be transported in a similar manner.

[0061] In one example of the disclosure, a method includes actuating a plurality of lift pins vertically upward, each lift pin including a first diameter at an upper portion thereof and a second diameter greater than the first diameter at a lower portion thereof, the actuating including guiding the upper portion of the lift pin through a corresponding opening in a support ring; actuating an edge ring positioned above the support ring vertically; transporting the edge ring to a carrier; and removing the edge ring from a processing chamber. In another example, the method can further include, after the edge ring is removed from the processing chamber, further actuating the lift pins upward to engage the support ring with the lower portion of the lift pins having the second diameter.

[0062] In another example, the method can further include lifting the support ring along with the lower portion of the lift pins and disposing the support ring on an empty carrier. In another example of the method, actuating the edge ring vertically can not cause the support ring to move.

[0063] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure can be devised without departing from the basic scope thereof, and the scope of the present disclosure is determined by the claims that follow.

Claims

1. A process kit for a substrate support, comprising: a slip ring having a body defined by an inner diameter and an outer diameter, the body having: one or more openings formed through the body, wherein each of the one or more openings has an axis that is parallel to an axis of the body; and a horizontal portion at an upper end of the body, the horizontal portion extending radially outward from an inner diameter of the body; a vertical portion extending from the horizontal portion in a first direction, wherein the first direction is parallel to the axis of the body; a support ring having a stepped upper surface with a radially inward portion raised above a radially outward portion, the support ring having an outer diameter; and a edge ring having a flat upper surface and a flat lower surface, the edge ring having: an inner diameter that is less than the outer diameter of the support ring; and an outer diameter that is greater than the outer diameter of the support ring, wherein: an inner diameter of the vertical portion of the slip ring is greater than the outer diameter of the support ring, and the vertical portion of the slip ring is configured to be in direct contact with and support the edge ring, wherein the outer diameter of the support ring is greater than the inner diameter of the body of the slip ring. the outer diameter of the edge ring is greater than the outer diameter of the body of the slip ring.

2. The process kit of claim 1, wherein the one or more openings formed in the body of the slip ring comprise at least three openings.

3. The process kit of claim 1, wherein an outer diameter of the vertical portion of the slip ring is less than the outer diameter of the edge ring.

4. The process kit of claim 1, wherein each of the one or more openings formed in the body of the slip ring is configured to accommodate one or more lift pins.

5. The process kit of claim 1, wherein the outer diameter of the support ring is greater than the inner diameter of the body of the slip ring, the support ring includes one or more openings formed through the support ring, and each of the one or more openings formed through the support ring is aligned with one of the one or more openings formed through the body of the slip ring.

6. The process kit of claim 1, wherein 7. A substrate support, comprising: an electrostatic chuck base; a puck positioned above the electrostatic chuck base; and a process kit for the substrate support, comprising: a slip ring positioned around the electrostatic chuck base and having a body defined by an inner diameter and an outer diameter, the body having: one or more openings formed through the body, wherein each of the one or more openings has an axis that is parallel to an axis of the body; and a vertical portion extending from the horizontal portion in a first direction, wherein the first direction is parallel to the axis of the body; a horizontal portion at an upper end of the body, the horizontal portion extending radially outward from an inner diameter of the body; a support ring having a stepped upper surface with a radially inward portion raised above a radially outward portion, the support ring having an outer diameter; and a edge ring having a flat upper surface and a flat lower surface, the edge ring having: an inner diameter that is less than the outer diameter of the support ring; and an outer diameter that is greater than the outer diameter of the support ring, wherein: an inner diameter of the vertical portion of the slip ring is greater than the outer diameter of the support ring, the vertical portion of the slip ring is configured to be in direct contact with and support the edge ring, and the outer diameter of the support ring is greater than the inner diameter of the body of the slip ring. the outer diameter of the edge ring is greater than the outer diameter of the body of the slip ring. the one or more openings formed in the body of the slip ring comprise at least three openings.

8. The substrate support of claim 7, wherein, ​ 9. The substrate support of claim 7, wherein, The one or more openings formed in the main body of the slip ring include at least three openings.

10. The substrate support of claim 7, wherein, An outer diameter of the vertical portion of the slip ring is less than the outer diameter of the edge ring.

11. The substrate support of claim 7, wherein, Each of the one or more openings formed in the main body of the slip ring is configured to accommodate one or more lift pins.

12. The substrate support of claim 7, wherein, The outer diameter of the support ring is greater than the inner diameter of the main body of the slip ring; and the support ring includes one or more openings formed therethrough, and each of the one or more openings formed through the support ring is aligned with one of the one or more openings formed through the main body of the slip ring.

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