Display device

Abstract

A display device is provided, the display device comprising a substrate including a display area, a peripheral area and a pad area, a first voltage line, a second voltage line and an island dam. The first voltage line is arranged between a first side of the display area and the pad area, the second voltage line is arranged at the other side of the display area, and the island dam is arranged between the display area and the pad area. The first voltage line includes a first main voltage line and a first connection unit protruding from the first main voltage line and extending toward the pad area. The second voltage line includes a second main voltage line and a second connection unit protruding from an end of the second main voltage line and extending toward the pad area. The island dam extends substantially parallel to the first main voltage line.

Description

[0001] This application claims priority from Korean Patent Application No. 10-2018-0027701, filed on Mar. 8, 2018, and Korean Patent Application No. 10-2019-0026475, filed on Mar. 7, 2019, the disclosures of which are hereby incorporated by reference in their entirety. Technical Field

[0002] Exemplary embodiments of the present disclosure relate to a display device. Background Art

[0003] The organic light emitting display device includes an organic light emitting element including a hole injection electrode, an electron injection electrode, and an organic emission layer formed therebetween. The organic light emitting display device is a self-emitting display device in which holes injected from the hole injection electrode and electrons injected from the electron injection electrode are recombined in the organic emission layer, so that excitons are generated from the recombination and light is emitted when the excitons transition from an excited state to a ground state.

[0004] Organic light-emitting display devices do not require a separate light source such as a backlight, can be driven by a low voltage, and can have a lightweight and thin structure. In addition, organic light-emitting display devices have high-quality characteristics such as a wide viewing angle, a high contrast ratio, and a short response time. Therefore, the use of organic light-emitting display devices is increasing. However, if moisture or oxygen from the outside of the display device penetrates into the display device, the performance of the organic light-emitting display device may be reduced. Summary of the invention

[0005] Exemplary embodiments of the present disclosure relate to an improved display device capable of preventing moisture or oxygen from entering the display device from the outside.

[0006] According to an exemplary embodiment of the present disclosure, a display device includes a substrate, a first voltage line, a second voltage line and an island dam. The substrate includes a display area, a peripheral area arranged at the periphery of the display area, and a pad area arranged in the peripheral area. The first voltage line is arranged in the peripheral area and is located between a first side of the display area and the pad area. The second voltage line is arranged at the other side of the display area. The island dam is arranged between the display area and the pad area. The island dam is arranged on a layer lower than the first voltage line and the second voltage line. The first voltage line includes a first main voltage line and a first connection unit. The first connection unit protrudes from the first main voltage line and extends toward the pad area. The second voltage line includes a second main voltage line and a second connection unit. The second connection unit protrudes from an end of the second main voltage line and extends toward the pad area. The island dam extends substantially parallel to the first main voltage line.

[0007] In an exemplary embodiment, the island dam is disposed between the first connection unit and the second connection unit, a first end of the island dam overlaps the first connection unit, and a second end of the island dam opposite to the first end overlaps the second connection unit.

[0008] In an exemplary embodiment, the substrate further includes a bending region disposed between the display region and the pad region. The inorganic insulating layer stacked on the substrate includes a groove formed at a position corresponding to the bending region. The organic material layer is disposed in the groove. The island dam includes the same material as the organic material layer.

[0009] In an exemplary embodiment, the display device further includes: a thin film transistor disposed in the display area; a display element electrically connected to the thin film transistor; a planarization insulating layer disposed between the thin film transistor and the display element; a first dam disposed in the peripheral area; and a second dam disposed in the peripheral area. The first dam and the second dam are separated from the planarization insulating layer, and the island dam overlaps at least one of the first dam and the second dam.

[0010] In an exemplary embodiment, the island dam is disposed below the first dam and the second dam, and a height of at least one of the first dam and the second dam increases at a position where at least one of the first dam and the second dam overlaps the island dam.

[0011] In an exemplary embodiment, the display device further includes a thin film transistor disposed in the display region, a display element electrically connected to the thin film transistor, an encapsulation layer sealing the display element, and an inorganic protective layer disposed between the island dam and the encapsulation layer.

[0012] In an exemplary embodiment, the encapsulation layer includes a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer that are sequentially stacked. The first inorganic encapsulation layer directly contacts the inorganic protective layer at a position where the first inorganic encapsulation layer overlaps the island dam.

[0013] In an exemplary embodiment, the display device further includes a data line providing a data signal to the thin film transistor, and the inorganic protective layer covers the data line.

[0014] In an exemplary embodiment, the display device further includes: a planarization insulating layer disposed between the thin film transistor and the display element; and a first dam separated from the planarization insulating layer and surrounding the display area. The inorganic protective layer covers the first connection unit and the second connection unit between the planarization insulating layer and the first dam.

[0015] In an exemplary embodiment, the display device further includes: a thin film transistor disposed in the display area; a display element electrically connected to the thin film transistor; a planarization insulating layer disposed between the thin film transistor and the display element; a first dam disposed in the peripheral area; and a second dam disposed in the peripheral area. The first dam and the second dam are separated from the planarization insulating layer. The island dam is disposed between the display area and the second dam.

[0016] According to an exemplary embodiment of the present disclosure, a display device includes: a substrate including a display area; a peripheral area disposed at the periphery of the display area; a pad area disposed in the peripheral area; and a bending area disposed between the display area and the pad area. The display device also includes: a thin film transistor disposed in the display area; a display element electrically connected to the thin film transistor; a data line providing a data signal to the thin film transistor; an inorganic protective layer covering the data line; a first voltage line disposed in the peripheral area; and a second voltage line disposed in the peripheral area. The first voltage line and the second voltage line provide a driving voltage to the display element. The display device also includes: an island dam disposed between the display area and the pad area; an encapsulation layer sealing the display element; an inorganic insulating layer disposed on the substrate and including a groove formed at a position corresponding to the bending area; and an organic material layer disposed in the groove. The island dam includes the same material as the organic material layer, and the inorganic protective layer is disposed between the island dam and the encapsulation layer.

[0017] In an exemplary embodiment, the first voltage line includes a first main voltage line disposed between a first side of the display area and the pad area and a first connection unit protruding from the first main voltage line and extending toward the pad area. In addition, the second voltage line includes a second main voltage line disposed at the other side of the display area and a second connection unit protruding from an end of the second main voltage line and extending toward the pad area. The island dam is disposed on a layer lower than the first voltage line and the second voltage line and extends substantially parallel to the first main voltage line. The island dam overlaps the first connection unit and the second connection unit.

[0018] In an exemplary embodiment, the island dam is disposed between the first connection unit and the second connection unit, a first end of the island dam overlaps the first connection unit, and a second end of the island dam opposite to the first end overlaps the second connection unit.

[0019] In an exemplary embodiment, the inorganic insulating layer covers the first connection unit, the second connection unit, and the island dam exposed in a region between the first connection unit and the second connection unit.

[0020] In an exemplary embodiment, the display device further includes a planarization insulating layer disposed between the thin film transistor and the display element, a first dam disposed in the peripheral region, and a second dam disposed in the peripheral region.

[0021] In an exemplary embodiment, the island dam is disposed between the display area and the second dam.

[0022] In an exemplary embodiment, the island dam overlaps at least one of the first dam and the second dam.

[0023] In an exemplary embodiment, the island dam is disposed on a lower layer than the first dam and the second dam.

[0024] In an exemplary embodiment, the encapsulation layer includes a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer that are sequentially stacked. The first inorganic encapsulation layer directly contacts the inorganic protective layer at a position where the first inorganic encapsulation layer overlaps the island dam.

[0025] In an exemplary embodiment, the first and second inorganic encapsulating layers contact each other at an outer side of the organic encapsulating layer, and the first and second inorganic encapsulating layers extend to an outer side of the first dam. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] The above and other features of the present disclosure will become more apparent by describing in detail exemplary embodiments of the present disclosure with reference to the accompanying drawings, in which:

[0027] Figure 1 is a plan view schematically showing an example of a display device according to an exemplary embodiment of the present disclosure;

[0028] Figure 2 is schematically shown along Figure 1 A cross-sectional view of an example of a cross section of a display device taken along line II' shown in FIG.

[0029] Figure 3 It is schematically shown Figure 1 A plan view of a region A of the display device shown in ;

[0030] Figure 4 is schematically shown along Figure 3 A cross-sectional view of an example of a cross section of the display device taken along line II-II' shown in FIG.

[0031] Figure 5 It is schematically shown Figure 3 A plan view of a region B of the display device shown in FIG.

[0032] Figure 6 is schematically shown along Figure 5 A cross-sectional view of an example of a cross section of region B taken along line III-III' shown in FIG.

[0033] Figure 7 is schematically shown along Figure 5 A cross-sectional view of an example of a cross section of region B taken along line IV-IV' shown in FIG.

[0034] Figures 8 to 11 are respectively and schematically illustrating exemplary embodiments according to the present disclosure. Figure 3 An example plan view of area B. DETAILED DESCRIPTION

[0035] Hereinafter, exemplary embodiments of the present disclosure will be described more fully with reference to the accompanying drawings.Throughout the drawings, like reference numerals may refer to like elements.

[0036] It will be understood that the terms "first", "second", "third", etc. are used herein to distinguish one element from another element, and the elements are not limited by these terms. Therefore, the "first" element in an exemplary embodiment may be described as the "second" element in another exemplary embodiment.

[0037] Unless the context clearly indicates otherwise, the singular forms "a", "an" and "the" are intended to include the plural forms as well.

[0038] It will be understood that when a component such as a film, region, layer, or element is referred to as being "on," "connected to," "bound to," or "adjacent to" another component, the component may be directly on, directly connected to, directly bound to, or directly adjacent to the other component, or there may be intervening components. It will also be understood that when a component is referred to as being "between" two components, the component may be the only component between the two components, or there may also be one or more intervening components. It will also be understood that when a component is referred to as "overlaying" another component, it may be the only component overlaying the other component, or there may also be one or more intervening components overlaying the other component.

[0039] For ease of description, spatially relative terms such as "under", "below", "below", "below", "above", "above", etc. may be used herein to describe the relationship of one element or feature to another element or feature as shown in the figure. It will be understood that in addition to the orientation depicted in the figure, the spatially relative terms are intended to include different orientations of the device in use or operation. For example, if the device in the figure is turned over, an element described as "under" or "below" or "below" other elements or features will then be positioned "above" the other elements or features. Therefore, the exemplary terms "under" and "under" can include both above and below orientations.

[0040] Here, when two or more elements or values ​​are described as being substantially the same or approximately equal to each other, it will be understood that the elements or values ​​are equivalent to each other, indistinguishable from each other, or distinguishable from each other but functionally identical to each other as will be understood by one of ordinary skill in the art. It will also be understood that when two components or directions are described as extending substantially parallel or perpendicularly to each other, the two components or directions extend precisely parallel or perpendicularly to each other, or extend approximately parallel or perpendicularly to each other within a measurement error as will be understood by one of ordinary skill in the art. In addition, it will be understood that, although a parameter may be described as having "approximately" a certain value according to an exemplary embodiment, the parameter may be precisely a certain value within a measurement error or approximately a certain value within a measurement error as will be understood by one of ordinary skill in the art.

[0041] Figure 1 is a plan view schematically illustrating an example of a display device 10 according to an exemplary embodiment of the present disclosure. Figure 2 is schematically shown along Figure 1 2 is a cross-sectional view of an example of a cross section of the display device 10 taken along line II′ shown in FIG. Figure 3 It is schematically shown Figure 1 1 is a plan view of a region A of a display device 10 shown in FIG. Figure 4 is schematically shown along Figure 3 2 is a cross-sectional view of an example of a cross section of the display device 10 taken along line II-II′ shown in FIG.

[0042] The display device 10 includes a display area DA provided with a plurality of pixels and a peripheral area PA located at the periphery of the display area DA. The plurality of pixels are not provided in the peripheral area PA. The substrate 100 includes the display area DA and the peripheral area PA. The peripheral area PA includes a pad area PADA. The pad area PADA is an area to which various electronic devices or printed circuit boards are electrically attached and provided with a first voltage line 210 and a second voltage line 220.

[0043] Figure 1 It can also be understood as a plan view showing an image of, for example, the substrate 100 in the process of manufacturing the display device 10. In the display device 10 or an electronic device such as a smart phone including the display device 10 to be finally manufactured, in order to minimize or reduce the width of the peripheral area PA visible to the user, a portion of the substrate 100 or other components may be bent.

[0044] For example, Figure 3As shown in , the bending area BA may be located between the pad area PADA and the display area DA by being included in the peripheral area PA. In this case, by bending the substrate 100 in the bending area BA, at least a portion of the pad area PADA may overlap the display area DA. The bending direction is set so that the pad area PADA is arranged behind the display area DA without shielding the display area DA. Therefore, the user recognizes that the display area DA occupies most of the display device 10.

[0045] The substrate 100 may include various flexible or bendable materials, such as a polymer resin such as polyethersulfone (PES), polyacrylate, polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyarylate (PAR), polyimide (PI) or cellulose acetate propionate (CAP). Various modifications may be made to the structure of the substrate 100. For example, the substrate 100 may have a multi-stacked layer structure including two layers respectively including the above-mentioned polymer resins and a barrier layer disposed between the two layers, the barrier layer including an inorganic material (e.g., silicon oxide, silicon nitride, silicon oxynitride, etc.).

[0046] The pixels in the display area DA include a display element. The display element may be, for example, an organic light emitting device 300. However, the display element is not limited thereto. In an exemplary embodiment, the display area DA includes a first thin film transistor T1, a second thin film transistor T2, the organic light emitting device 300, and a first planarization insulating layer 141 and a second planarization insulating layer 142 (see FIG. 1 ) disposed between the first thin film transistor T1, the second thin film transistor T2 and the organic light emitting device 300. Figure 2 ). Reference Figure 2 The structure of a pixel is described in more detail.

[0047] In an exemplary embodiment, the organic light emitting device 300 is electrically connected to a first thin film transistor T1, a second thin film transistor T2 and a storage capacitor Cst. The first thin film transistor T1 includes a first semiconductor layer Act1 and a first gate electrode G1, and the second thin film transistor T2 includes a second semiconductor layer Act2 and a second gate electrode G2.

[0048] The first semiconductor layer Act1 and the second semiconductor layer Act2 may include, for example, amorphous silicon, polycrystalline silicon, an oxide semiconductor, or an organic semiconductor material. In an exemplary embodiment, the first semiconductor layer Act1 includes a first channel region C1, a first source region S1, and a first drain region D1. The first source region S1 and the first drain region D1 are respectively disposed at two opposite sides of the first channel region C1. In an exemplary embodiment, the second semiconductor layer Act2 includes a second channel region C2, a second source region S2, and a second drain region D2. The second source region S2 and the second drain region D2 are respectively disposed at two opposite sides of the second channel region C2.

[0049] The first source region S1 and the first drain region D1 of the first semiconductor layer Act1 can be respectively understood as the source electrode and the drain electrode of the first thin film transistor T1. The second source region S2 and the second drain region D2 of the second semiconductor layer Act2 can be respectively understood as the source electrode and the drain electrode of the second thin film transistor T2.

[0050] In an exemplary embodiment, the first gate electrode G1 and the second gate electrode G2 are disposed to overlap the first channel region C1 of the first semiconductor layer Act1 and the second channel region C2 of the second semiconductor layer Act2, respectively. The gate insulating layer 120 is disposed between the first gate electrode G1 and the first semiconductor layer Act1 and between the second gate electrode G2 and the second semiconductor layer Act2. Each of the first gate electrode G1 and the second gate electrode G2 may be, for example, a single layer or a plurality of stacked layers formed of a conductive material including, for example, at least one of molybdenum (Mo), aluminum (Al), copper (Cu), and titanium (Ti).

[0051] exist Figure 2 In the exemplary embodiment, the first gate electrode G1 and the second gate electrode G2 are disposed on the same layer. However, the exemplary embodiments of the present disclosure are not limited thereto. For example, in the exemplary embodiment, the first gate electrode G1 and the second gate electrode G2 are disposed on two different layers. Figure 2 In the exemplary embodiment of the present disclosure, the display device 10 is shown as a top-gate display device in which the first gate electrode G1 and the second gate electrode G2 are respectively disposed above the first semiconductor layer Act1 and the second semiconductor layer Act2. However, the exemplary embodiments of the present disclosure are not limited thereto. For example, in the exemplary embodiment, the display device 10 is a bottom-gate display device in which the first gate electrode G1 and the second gate electrode G2 are respectively disposed below the first semiconductor layer Act1 and the second semiconductor layer Act2.

[0052] In an exemplary embodiment, the storage capacitor Cst includes a first storage capacitor electrode CE1 and a second storage capacitor electrode CE2. The first storage capacitor electrode CE1 and the second storage capacitor electrode CE2 overlap each other. The first storage capacitor electrode CE1 and the second storage capacitor electrode CE2 may respectively include a low resistance conductive material including at least one of, for example, Mo, Al, Cu, and Ti.

[0053] In an exemplary embodiment, the storage capacitor Cst is overlapped with the first thin film transistor T1. The first thin film transistor T1 may be a driving thin film transistor. Figure 2 An exemplary embodiment is shown in which the storage capacitor Cst overlaps the first thin film transistor T1 and the first storage capacitor electrode CE1 is the first gate electrode G1 of the first thin film transistor T1, but exemplary embodiments of the present disclosure are not limited thereto. For example, in an exemplary embodiment, the storage capacitor Cst does not overlap the first thin film transistor T1.

[0054] In an exemplary embodiment, the buffer layer 110 is disposed between the substrate 100 and the first and second thin film transistors T1 and T2. The buffer layer 110 may include an inorganic insulating material. For example, the buffer layer 110 may be a single layer or a multi-stacked layer including at least one of silicon oxynitride, silicon oxide, and silicon nitride.

[0055] In an exemplary embodiment, the gate insulating layer 120 is disposed between the first gate electrode G1 and the first semiconductor layer Act1 and between the second gate electrode G2 and the second semiconductor layer Act2. The gate insulating layer 120 may include an inorganic insulating material. For example, the gate insulating layer 120 may be a single layer or a multi-stacked layer including at least one of silicon oxynitride, silicon oxide, and silicon nitride.

[0056] In an exemplary embodiment, the interlayer insulating layer 130 covers the first thin film transistor T1 and the second thin film transistor T2. Figure 2 , the interlayer insulating layer 130 is shown to include a first interlayer insulating layer 131 and a second interlayer insulating layer 132. According to an exemplary embodiment, the first interlayer insulating layer 131 is directly disposed on the first thin film transistor T1 and the second thin film transistor T2, and / or is directly disposed on the first storage capacitor electrode CE1. The second interlayer insulating layer 132 is disposed on the second storage capacitor electrode CE2. Each of the first interlayer insulating layer 131 and the second interlayer insulating layer 132 may be, for example, a single layer or a multi-stacked layer including at least one of silicon oxynitride, silicon oxide, and silicon nitride. For example, the first interlayer insulating layer 131 may be a single layer formed of silicon nitride, and the second interlayer insulating layer 132 may be a multi-stacked layer formed of silicon nitride and silicon oxide.

[0057] In an exemplary embodiment, the data line DL is disposed on the interlayer insulating layer 130. The data line DL is electrically connected to the switching thin film transistor and provides a data signal thereto. The data line DL may be, for example, a single layer or a multi-stacked layer including at least one of Al, Cu, Ti, and alloys thereof. In an exemplary embodiment, the data line DL is a triple layer having a structure of Ti / Al / Ti.

[0058] In an exemplary embodiment, the inorganic protective layer PVX covers the data line DL. The inorganic protective layer PVX may be, for example, made of silicon nitride (SiN x ) and silicon oxide (SiO x The inorganic protective layer PVX covers and protects the wiring exposed in the peripheral area PA (for example, Figure 3 For example, in a portion of the substrate 100 (e.g., a portion of the peripheral area PA), a wiring formed simultaneously in the same process as the process of forming the data line DL is exposed. Although the exposed portion of the wiring may be damaged by an etchant used to pattern the pixel electrode 310 described below, since the inorganic protective layer PVX covers the data line DL and a portion of the wiring formed simultaneously with the data line DL, the wiring can be protected from damage during the patterning of the pixel electrode 310.

[0059] In an exemplary embodiment, the driving voltage line PL and the data line DL are disposed on two different layers. Here, the phrase "A and B are disposed / arranged on two different layers" means that at least one insulating layer is disposed between A and B, and of A and B, one is disposed under the at least one insulating layer and the other is disposed on the at least one insulating layer. In an exemplary embodiment, the first planarization insulating layer 141 is disposed between the driving voltage line PL and the data line DL.

[0060] The driving voltage line PL may be, for example, a single layer or a multi-stacked layer including at least one of Al, Cu, Ti, and alloys thereof. For example, the driving voltage line PL may be a triple layer having a structure of Ti / Al / Ti. Figure 2 A configuration in which the driving voltage line PL is disposed only on the first planarization insulating layer 141 is shown, but exemplary embodiments of the present disclosure are not limited thereto. For example, in an exemplary embodiment, the driving voltage line PL is connected to an additional voltage line formed at a lower portion together with the data line DL through a through hole formed in the first planarization insulating layer 141. Therefore, the resistance of the driving voltage line PL can be reduced.

[0061] In an exemplary embodiment, the second planarization insulating layer 142 covers the driving voltage line PL. The first planarization insulating layer 141 and the second planarization insulating layer 142 may include an organic material. The organic material may include, for example, PI, commercial polymers such as polymethyl methacrylate (PMMA), polystyrene (PS), polymer derivatives having a phenol group, acrylic polymers, aryl ether polymers, amide polymers, fluoropolymers, p-xylene polymers, vinyl alcohol polymers, and blends thereof.

[0062] In an exemplary embodiment, the organic light emitting device 300 is disposed on the second planarization insulating layer 142. The organic light emitting device 300 includes a pixel electrode 310, an opposing electrode 330, and an intermediate layer 320 disposed between the pixel electrode 310 and the opposing electrode 330 and including an emission layer.

[0063] In an exemplary embodiment, the pixel defining layer 150 is disposed on the second planarization insulating layer 142 and the pixel electrode 310. The pixel defining layer 150 defines a pixel by including an opening corresponding to each pixel, wherein the opening exposes at least a central portion of the corresponding pixel electrode 310. In an exemplary embodiment, the pixel defining layer 150 increases the distance between the edge of the pixel electrode 310 and the edge of the counter electrode 330, thereby preventing an arc from occurring between the edge of the pixel electrode 310 and the edge of the counter electrode 330. The pixel defining layer 150 may be formed, for example, of an organic material including PI, hexamethyldisiloxane, or the like.

[0064] In an exemplary embodiment, the pixel electrode 310 is connected to a pixel circuit including a first thin film transistor T1 , a second thin film transistor T2 , and a storage capacitor Cst through a first connection metal CM1 and a second connection metal CM2 .

[0065] The intermediate layer 320 may include a low molecular weight material or a polymer material. When the intermediate layer 320 includes a low molecular weight material, the intermediate layer 320 may have a structure in which a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EML), an electron transport layer (ETL), an electron injection layer (EIL), etc. are stacked one or more times. The low molecular weight material may include, for example, copper phthalocyanine (CuPc), N, N'-di (naphthalene-1-yl) -N, N'-diphenyl-benzidine (NPB) or tri-8-hydroxyquinoline aluminum (Alq 3 ) as an example. These layers can be formed by using a vacuum deposition method.

[0066] When the intermediate layer 320 includes a polymer material, the intermediate layer 320 may generally have a structure including an HTL and an EML. In this case, the HTL may include poly (3,4-ethylenedioxythiophene) (PEDOT), and the EML may include a polymer material such as polyphenylene vinylene (PPV) and polyfluorene. However, the structure of the intermediate layer 320 is not limited to the above-mentioned configuration, and the intermediate layer 320 may have any of a variety of structures. For example, in an exemplary embodiment, the intermediate layer 320 may include an integral layer corresponding to a plurality of pixel electrodes (each pixel electrode being equivalent to the pixel electrode 310), or may be patterned into a plurality of layers corresponding to the plurality of pixel electrodes 310, respectively.

[0067] On the one hand, in this embodiment, the intermediate layer 320, for example, the light emitting layer (EML), may include a quantum dot material. The core of the quantum dot may be selected from II-VI group compounds, III-V group compounds, IV-VI group compounds, IV group elements, IV group compounds, and combinations thereof.

[0068] The II-VI group compound can be selected from binary compounds, ternary compounds and quaternary compounds, wherein the binary compound is selected from CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MeSe, MgS and mixtures thereof; the ternary compound is selected from AgInS, CuInS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS and mixtures thereof; the quaternary compound is selected from HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe and mixtures thereof.

[0069] The III-V group compound can be selected from binary compounds, ternary compounds and quaternary compounds, wherein the binary compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb and mixtures thereof; the ternary compound is selected from GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP and mixtures thereof; the quaternary compound is selected from GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb and mixtures thereof.

[0070] The IV-VI group compound may be selected from a binary compound, a ternary compound and a quaternary compound, wherein the binary compound is selected from SnS, SnSe, SnTe, PbS, PbSe, PbTe and mixtures thereof; the ternary compound is selected from SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe and mixtures thereof; the quaternary compound is selected from SnPbSSe, SnPbSeTe, SnPbSTe and mixtures thereof. The IV group element may be selected from Si, Ge and mixtures thereof. The IV group compound may be a binary compound selected from SiC, SiGe and mixtures thereof.

[0071] At this time, the binary compound, ternary compound or quaternary compound may exist in the particle at a uniform concentration, or may exist in the same particle in a state where the concentration distribution is divided into different parts. In addition, a quantum dot may also have a core / shell structure surrounding other quantum dots. The interface between the core and the shell may have a concentration gradient in which the concentration of the element present in the shell decreases toward the center.

[0072] In some embodiments, quantum dots may have a core-shell structure including a core comprising the above-mentioned nanocrystals and a shell surrounding the core. The shell of the quantum dot may be used as a protective layer to prevent the chemical denaturation of the core to maintain semiconductor properties and / or as a charging layer to impart electrophoretic properties to the quantum dot. The shell may be a single layer or multiple layers. The interface of the core and the shell may have a concentration gradient in which the concentration of the element present in the shell decreases toward the center. Examples of the shell of the quantum dot include metal or non-metal oxides, semiconductor compounds, or combinations thereof.

[0073] For example, the metal or non-metal oxide may be SiO 2 、Al 2 O 3 、TiO 2 、ZnO、MnO、Mn 2 O 3 , Mn 3 O 4 , CuO, FeO, Fe 2 O 3 , Fe 3 O 4 , CoO, Co 3 O 4 Binary compounds such as NiO or MgAl 2 O 4 、CoFe 2 O 4 、NiFe 2 O 4 and CoMn 2 O 4 The present invention may include ternary compounds such as , but the present invention is not limited thereto.

[0074] The semiconductor compound can be exemplified by CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, etc., but the present invention is not limited thereto.

[0075] The quantum dots may have a half-maximum full width (FWHM) of an emission wavelength spectrum of about 45 nm or less, preferably a half-maximum full width of an emission wavelength spectrum of 40 nm or less, and more preferably a half-maximum full width of an emission wavelength spectrum of about 30 nm or less, and within this range, color purity or color reproducibility may be improved. Moreover, the light emitted by the quantum dots is emitted in the front direction, thereby improving a wide viewing angle.

[0076] The shape of quantum dots is any commonly used form in the art without particular limitation, but more specifically, spherical, pyramidal, multi-arm or cubic nanoparticles, nanotubes, nanowires, nanofibers and nanoplate particles can be used.

[0077] Quantum dots can adjust the color of emitted light according to the particle size, so quantum dots can have various luminescent colors such as blue, red and green.

[0078] In an exemplary embodiment, the counter electrode 330 covers the display area DA. For example, the counter electrode 330 may be formed in an integral type to cover a plurality of organic light emitting devices each equivalent to the organic light emitting device 300 .

[0079] The encapsulation layer 400 is disposed on the counter electrode 330. The encapsulation layer 400 protects the organic light emitting device 300 from moisture or oxygen from the outside of the display device 10. For example, the encapsulation layer 400 seals the organic light emitting device 300. In order to protect the organic light emitting device 300, the encapsulation layer 400 extends over the display area DA where the organic light emitting device 300 is disposed and over the peripheral area PA at the periphery of the display area DA. Figure 2 As shown in , the encapsulation layer 400 may include a multi-stacked layer structure. For example, in an exemplary embodiment, the encapsulation layer 400 includes a first inorganic encapsulation layer 410, an organic encapsulation layer 420, and a second inorganic encapsulation layer 430 that are sequentially stacked.

[0080] The first inorganic encapsulating layer 410 is formed on the counter electrode 330 and may include, for example, silicon oxide, silicon nitride, and / or silicon oxynitride, etc. The first inorganic encapsulating layer 410 may be conformally formed along a structure disposed under the first inorganic encapsulating layer 410 .

[0081] In an exemplary embodiment, the organic encapsulation layer 420 is disposed on the first inorganic encapsulation layer 410 and is thick enough so that the upper surface of the organic encapsulation layer 420 is substantially flat. The organic encapsulation layer 420 may include, for example, at least one of PET, PEN, polycarbonate, PI, polyethylene sulfonate, polyoxymethylene, PAR, and hexamethyldisiloxane.

[0082] The second inorganic encapsulation layer 430 covers the organic encapsulation layer 420. The second inorganic encapsulation layer 430 may include, for example, silicon oxide, silicon nitride and / or silicon oxynitride, etc. In an exemplary embodiment, the first inorganic encapsulation layer 410 and the second inorganic encapsulation layer 430 have an area larger than that of the organic encapsulation layer 420, and contact each other outside the organic encapsulation layer 420. Therefore, in an exemplary embodiment, due to the first inorganic encapsulation layer 410 and the second inorganic encapsulation layer 430, the organic encapsulation layer 420 is not exposed to the outside.

[0083] As described above, according to an exemplary embodiment of the present disclosure, since the encapsulation layer 400 includes the first inorganic encapsulation layer 410, the organic encapsulation layer 420, and the second inorganic encapsulation layer 430, by using such a multi-layer structure, even if a crack occurs in the encapsulation layer 400, the crack is not connected between the first inorganic encapsulation layer 410 and the organic encapsulation layer 420, or between the organic encapsulation layer 420 and the second inorganic encapsulation layer 430. Therefore, in an exemplary embodiment, the formation of a path through which moisture or oxygen from the outside penetrates into the display area DA can be prevented or reduced.

[0084] In an exemplary embodiment, the first voltage line 210 and the second voltage line 220 are disposed in the peripheral area PA. Each of the first voltage line 210 and the second voltage line 220 provides a driving voltage to the organic light emitting device 300. In addition, in an exemplary embodiment, the bending area BA is disposed in the peripheral area PA.

[0085] For example, in an exemplary embodiment, the first voltage line 210 is a first power supply voltage (ELVDD) line, and the second voltage line 220 is a second power supply voltage (ELVSS) line. In an exemplary embodiment, the second voltage line 220 is directly connected to the opposite electrode 330 or connected to the opposite electrode 330 via an additional wiring.

[0086] In an exemplary embodiment, if Figure 1 As shown in , the first voltage line 210 is arranged between one side of the display area DA (e.g., the first side of the display area DA) and the pad area PADA. In an exemplary embodiment, the first voltage line 210 includes a first main voltage line 212 and a first connection unit 214. The first main voltage line 212 and the first connection unit 214 are arranged to correspond to the one side of the display area DA. For example, when the display area DA is a rectangle, the first main voltage line 212 can be arranged to correspond to any side of the display area DA. In an exemplary embodiment, the first main voltage line 212 is substantially parallel to the any side and has a length greater than the length of the any side. Any side corresponding to the first main voltage line 212 is a side adjacent to the pad area PADA.

[0087] In an exemplary embodiment, the first connection unit 214 protrudes from the first main voltage line 212 and extends in a first direction. The first direction is a direction extending from the display area DA to the pad area PADA. The first connection unit 214 may be connected to the pad unit.

[0088] In an exemplary embodiment, the second voltage line 220 is disposed at the other side of the display area DA (e.g., the side of the display area DA where the first voltage line 210 is not disposed). For example, in an exemplary embodiment, the second voltage line 220 surrounds the remaining side of the display area DA (e.g., the remaining side of the display area DA where the first voltage line 210 is not disposed). For example, referring to Figure 1In an exemplary embodiment, the display device 10 includes four sides, the first voltage line 210 is disposed between the first side of the display area DA and the pad area PADA, and the second voltage line 220 surrounds the remaining three sides of the display area DA (e.g., sides other than the first side). In an exemplary embodiment, the second voltage line 220 includes a second main voltage line 222 corresponding to two opposite ends of the first main voltage line 212 and the remaining sides of the display area DA, and a second connection unit 224 protruding from an end of the second main voltage line 222 toward the first direction and extending in the first direction. The second connection unit 224 may be connected to the pad unit.

[0089] As mentioned above, Figure 3 As shown in FIG. 1 , an exemplary embodiment of the present disclosure includes a bending area BA. The bending area BA disposed between the display area DA and the pad area PADA is an area where portions of the buffer layer 110, the gate insulating layer 120, and the interlayer insulating layer 130 are removed. Hereinafter, the buffer layer 110, the gate insulating layer 120, and the interlayer insulating layer 130 are collectively referred to as an inorganic insulating layer IL. The inorganic insulating layer IL may be understood as a layer including a groove at a position corresponding to the bending area BA (see FIG. 1 ). Figure 4 ). By removing a portion of the inorganic insulating layer IL from the bending area BA, a bending operation may be easily performed in the bending area BA, and cracks may be prevented from occurring in the inorganic insulating layer IL during the bending operation.

[0090] In an exemplary embodiment, the region where the inorganic insulating layer IL is removed is filled with the organic material layer 160 .

[0091] In an exemplary embodiment, the organic material layer 160 mainly disposed in the bending area BA extends to a non-bending area adjacent to the bending area BA. The organic material layer 160 can compensate for the height difference of the bending area BA where the inorganic insulating layer IL is removed, and absorb stress caused by the bending operation. Therefore, according to an exemplary embodiment of the present disclosure, the concentration of stress caused by the bending operation of various types of wiring disposed in the bending area BA and used to transmit electrical signals from a pad (or "pad") unit disposed in the pad area PADA to the display area DA is effectively reduced.

[0092] The organic material layer 160 may include, for example, at least one of acrylic acid, methacrylic acid, polyester, polyethylene, polypropylene, PET, PEN, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, PAR, and hexamethyldisiloxane.

[0093] Figure 5 It is schematically shown Figure 3 0 is a plan view of an example of a region B of the display device 10 shown in FIG. Figure 6 is schematically shown along Figure 5 2 is a cross-sectional view of an example of a cross section of region B taken along line III-III′ shown in FIG. Figure 7 is schematically shown along Figure 5 2 is a cross-sectional view of an example of a cross section of region B taken along line IV-IV′ shown in FIG.

[0094] First, refer to Figure 5 , in the peripheral area PA (see Figure 1 ), a portion of the second planarization insulating layer 142 is removed. When a portion of the second planarization insulating layer 142 is removed, the first planarization insulating layer 141 disposed under the second planarization insulating layer 142 is also removed (see Figure 2 ). Therefore, when the second planarization insulating layer 142 is described below, the description of the second planarization insulating layer 142 can also be applied to the first planarization insulating layer 141 (see Figure 2 ).

[0095] The area where the second planarization insulating layer 142 is removed surrounds the display area DA. Therefore, moisture from the outside is prevented from penetrating into the display area DA through the second planarization insulating layer 142 and the first planarization insulating layer 141 formed of an organic material.

[0096] According to an exemplary embodiment, although at least the first connection unit 214 and the second connection unit 224 are exposed in the region where the second planarization insulating layer 142 is removed, since the inorganic protective layer PVX is formed over the first connection unit 214 and the second connection unit 224, when the pixel electrode 310 (see Figure 2 ) During the patterning process, the first connection unit 214 and the second connection unit 224 can be protected from damage.

[0097] According to an exemplary embodiment, when forming the encapsulation layer 400 (see Figure 2 ), more specifically, when forming the organic encapsulation layer 420, it is defined that the material used to form the organic encapsulation layer 420 is applied to the previously set area. In order to define the material, such as Figure 5 As shown in FIG. 1 , the first dam 610 may be arranged in the peripheral area PA (see FIG. Figure 1 The first dam 610 is located in the peripheral area PA (see Figure 1 ) to be separated from the second planarization insulating layer 142.

[0098] The first dam 610 may have a multi-stacked layer structure. Figure 7As shown in , in an exemplary embodiment, the first dam 610 has a structure in which a first layer 611, a second layer 613, and a third layer 615 are continuously stacked. In an exemplary embodiment, the first layer 611 is formed simultaneously with the second planarization insulating layer 142 and is formed of the same material as the second planarization insulating layer 142, and the second layer 613 is formed simultaneously with the pixel defining layer 150 and is formed of the same material as the pixel defining layer 150. The third layer 615 may be additionally formed on the second layer 613 by using the same material as the second layer 613.

[0099] The first dam 610 supports the organic light emitting device 300 (see FIG. Figure 2 ) of the intermediate layer 320 (see Figure 2 ) or the electrode 330 (see Figure 2 ) and can protect previously formed components from contacting the mask and being damaged. In addition, during the formation of the organic encapsulation layer 420 on the first inorganic encapsulation layer 410, the first dam 610 can prevent the material used to form the organic encapsulation layer 420 from moving in the edge direction of the substrate 100.

[0100] like Figure 7 As shown in FIG. 1 , in an exemplary embodiment, the first inorganic encapsulating layer 410 and the second inorganic encapsulating layer 430 cover the first dam 610 and extend to an area outside the first dam 610. Therefore, it is possible to more effectively prevent moisture and oxygen from penetrating into the display device 10 from the outside.

[0101] In an exemplary embodiment, the second dam 620 is formed at a position further inside than the first dam 610. In an exemplary embodiment, since the second dam 620 includes a lower layer 623 that may be formed simultaneously with the second layer 613 of the first dam 610 and formed of the same material as the second layer 613 of the first dam 610 and an upper layer 625 that may be formed simultaneously with the third layer 615 of the first dam 610 and formed of the same material as the third layer 615 of the first dam 610, the height of the second dam 620 is smaller than that of the first dam 610. In an exemplary embodiment, the first dam 610 and the second dam 620 are separated from the second planarization insulating layer 142. For example, in an exemplary embodiment, the first dam 610 and the second dam 620 are different components made of materials different from those of the second planarization insulating layer 142, respectively.

[0102] As described above, according to an exemplary embodiment of the present disclosure, by covering the display area DA (see Figure 1 ), the first dam 610 and the second dam 620 may prevent the material for forming the organic encapsulation layer 420 from diffusing toward the edge of the substrate 100. Therefore, the formation of an edge tail at the organic encapsulation layer 420 may be prevented.

[0103] However, due to the rapid change of the step difference in the area where the second planarization insulating layer 142 is removed, when the organic encapsulation material (e.g., liquid organic material) for forming the organic encapsulation layer 420 is applied, the backflow of the material for forming the organic encapsulation layer 420 may be more intense in the area where the second planarization insulating layer 142 is removed. In addition, as the width of the peripheral area PA is reduced / minimized, the distance between the first dam 610 and the second dam 620 is gradually reduced. Therefore, it may be difficult to restrict the flow of the material for forming the organic encapsulation layer 420. Since the material for forming the organic encapsulation layer 420 flows along the sides of the first connection unit 214 and the second connection unit 224 toward the pad area PADA (see FIG. 1 ), the organic encapsulation layer 420 may be formed by the organic encapsulation material (e.g., liquid organic material) for forming the organic encapsulation layer 420. Figure 1 ) direction than in the direction along which the first dam 610 and the second dam 620 are formed. In order to prevent the edge tail from being formed at the organic encapsulation layer 420, the material used to form the organic encapsulation layer 420 should be interrupted from spreading toward the pad area PADA (see Figure 1 )’s spread.

[0104] To this end, in an exemplary embodiment, an island dam 162 extending substantially parallel to the first main voltage line 212 is additionally formed. For example, a length direction of the island dam 162 extends substantially parallel to the first main voltage line 212. The island dam 162 may be partially formed in an area where a material for forming the organic encapsulation layer 420 has a strong flow. For example, in an exemplary embodiment, the island dam 162 is located in the display area DA (see Figure 1 ) and pad area PADA (see Figure 1 ). More specifically, in an exemplary embodiment, the island dam 162 is located in a position such that it overlaps with the first connection unit 214 and the second connection unit 224 at the same time. In an exemplary embodiment, the island dam 162 extends in a direction substantially perpendicular to the direction in which the first connection unit 214 and the second connection unit 224 extend. In an exemplary embodiment, two opposite ends of the island dam 162 overlap with the first connection unit 214 and the second connection unit 224, respectively. For example, in an exemplary embodiment, a first end of the island dam 162 overlaps with the first connection unit 214, and a second end of the island dam 162 opposite to the first end of the island dam 162 overlaps with the second connection unit 224.

[0105] In an exemplary embodiment, the island dam 162 includes the organic material layer 160 (see Figure 4 ) of the same material. For example, in an exemplary embodiment, the island dam 162 is formed of the same material as the organic material layer 160 (see Figure 4) is formed simultaneously and is formed of the same material as that of the organic material layer 160. Therefore, in an exemplary embodiment, the island dam 162 is disposed on a layer lower than the first connection unit 214 and the second connection unit 224, and the inorganic protective layer PVX covers the upper surface of the region between the first connection unit 214 and the second connection unit 224.

[0106] As described above, when the island dam 162 is formed in a region where the material for forming the organic encapsulation layer 420 has a strong flow, resistance is caused in the flow of the material for forming the organic encapsulation layer 420. Therefore, according to an exemplary embodiment, when the material for forming the organic encapsulation layer 420 is coated, the material for forming the organic encapsulation layer 420 may be effectively prevented from going over the first dam 610 and diffusing to the edge of the substrate 100.

[0107] In an exemplary embodiment, the inorganic protective layer PVX is formed on the island dam 162, and the island dam 162 does not directly contact the first inorganic encapsulation layer 410. For example, since the first inorganic encapsulation layer 410 directly contacts the inorganic protective layer PVX at a position where the first inorganic encapsulation layer 410 overlaps the island dam 162, the bonding strength of the first inorganic encapsulation layer 410 is not weakened by contacting the island dam 162 formed of an organic material. Therefore, the island dam 162 can be formed at various positions. For example, although Figure 5 An exemplary embodiment is shown in which the island dam 162 is disposed inside the second dam 620, but exemplary embodiments of the present disclosure are not limited thereto. For example, according to exemplary embodiments, a plurality of island dams may be formed at various positions.

[0108] Figures 8 to 11 It is schematically shown Figure 3 10 is a plan view of an exemplary embodiment of a region B of a display device 10 shown in FIG. Figures 5 to 7 Further description of the elements and processes described.

[0109] Figure 8 An exemplary embodiment in which the island dam 162B is located between the first dam 610 and the second dam 620 is shown. Figure 2 ) provides resistance to the flow of the material, so even when the island dam 162B is disposed between the first dam 610 and the second dam 620, the island dam 162B still controls the material used to form the organic encapsulation layer 420 (see Figure 2 ) of the material. The island dam 162B can be connected with the reference Figure 7 The island dam 162 is described as being formed simultaneously.

[0110] like Fig. 9As shown in FIG. 1 , in an exemplary embodiment, the island dam 162C is disposed at a position outside the first dam 610. Similar to the above description, in an exemplary embodiment, even when the island dam 162C is disposed outside the first dam 610, the island dam 162C still controls the organic encapsulation layer 420 (see FIG. 1 ). Figure 2 ) and since the island dam 162C does not directly contact the first inorganic encapsulation layer 410 (see Figure 2 ), the adhesive property of the first inorganic encapsulation layer 410 is not weakened. The island dam 162C may be Figure 8 Island dam 162B or refer to Figure 7 The island dam 162 is described as being formed simultaneously.

[0111] Fig.10 1 shows an exemplary embodiment in which the island dam 162D is formed at a position overlapping the second dam 620. In the exemplary embodiment, when the island dam 162D overlaps the second dam 620, the height of the second dam 620 is locally increased at the portion overlapping the island dam 162D. Therefore, the organic encapsulation layer 420 (see FIG. 1 ) can be more effectively prevented from being damaged. Figure 2 ) of the material. However, the exemplary embodiments of the present disclosure are not limited thereto. For example, in the exemplary embodiment, the island dam 162D also overlaps the first dam 610. As another example, Fig.11 As shown in , in an exemplary embodiment, the island dam 162E is formed so that it overlaps both the first dam 610 and the second dam 620 at the same time. In this case, in an exemplary embodiment, the height of at least one of the first dam 610 and the second dam 620 increases in the overlapping area. For example, the height of at least one of the first dam 610 and the second dam 620 in the overlapping area (related to the island dam 162E) may be greater than the height in the non-overlapping area (related to the island dam 162E). In these exemplary embodiments, the island dam (e.g., 162D, 162E) may be disposed below the first dam 610 and the second dam 620.

[0112] According to an exemplary embodiment of the present disclosure, by preventing the edge tail from being formed at the organic encapsulation layer, it is possible to prevent moisture or oxygen from being infiltrated into the display device from the outside.

[0113] While the present disclosure has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present disclosure as defined by the claims.

Claims

1. A display device, comprising: a substrate including a display area, a peripheral area disposed at the periphery of the display area, and a pad area disposed in the peripheral area; a first voltage line disposed in the peripheral region and located between a first side of the display region and the pad region; A second voltage line is arranged at the other side of the display area; as well as an island dam, disposed between the display area and the pad area, The island dam is disposed on a layer lower than the first voltage line and the second voltage line. wherein the first voltage line includes a first main voltage line and a first connection unit, wherein the first connection unit protrudes from the first main voltage line and extends toward the pad area, wherein the second voltage line includes a second main voltage line and a second connection unit, wherein the second connection unit protrudes from an end of the second main voltage line and extends toward the pad area, wherein the island dam extends in parallel with the first main voltage line, and The island dam is disposed between the first connection unit and the second connection unit, a first end of the island dam overlaps with the first connection unit, and a second end of the island dam opposite to the first end overlaps with the second connection unit.

2. The display device according to claim 1, in, The substrate further includes a bending area disposed between the display area and the pad area, The island dam is arranged between the display area and the bending area. wherein the inorganic insulating layer stacked on the substrate includes a groove formed at a position corresponding to the bending area, and the organic material layer is disposed in the groove, The island dam comprises the same material as the organic material layer.

3. The display device according to claim 1, further comprising: A thin film transistor, disposed in the display area; A display element electrically connected to the thin film transistor; A planarization insulating layer, disposed between the thin film transistor and the display element; a first dam disposed in the peripheral area; as well as a second dam disposed in the peripheral region, wherein the first dam and the second dam are separated from the planarization insulating layer, Wherein, the island dam overlaps with at least one of the first dam and the second dam.

4. The display device according to claim 3, wherein: The island dam is disposed below the first dam and the second dam, and a height of at least one of the first dam and the second dam increases at a position where the at least one of the first dam and the second dam overlaps the island dam.

5. The display device according to claim 1, further comprising: A thin film transistor, disposed in the display area; A display element electrically connected to the thin film transistor; An encapsulation layer, sealing the display element; as well as The inorganic protective layer is disposed between the island dam and the encapsulation layer.

6. The display device according to claim 5, wherein: The encapsulation layer comprises: a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer stacked successively, The first inorganic encapsulation layer directly contacts the inorganic protective layer at a position where the first inorganic encapsulation layer overlaps the island dam.

7. The display device according to claim 5, wherein: The display device further includes: A data line provides a data signal to the thin film transistor, and the inorganic protective layer covers the data line.

8. The display device according to claim 5, further comprising: A planarization insulating layer, disposed between the thin film transistor and the display element; as well as a first dam, separated from the planarization insulating layer and surrounding the display area, The inorganic protection layer covers the first connection unit and the second connection unit between the planarization insulating layer and the first dam.

9. The display device according to claim 1, further comprising: A thin film transistor, disposed in the display area; A display element electrically connected to the thin film transistor; A planarization insulating layer, disposed between the thin film transistor and the display element; a first dam disposed in the peripheral area; as well as a second dam disposed in the peripheral region and between the display region and the first dam, wherein the first dam and the second dam are separated from the planarization insulating layer, Wherein, the island dam is arranged between the display area and the second dam.

10. The display device according to claim 1, further comprising: A thin film transistor, disposed in the display area; A display element electrically connected to the thin film transistor; A planarization insulating layer, disposed between the thin film transistor and the display element; a first dam disposed in the peripheral area; as well as a second dam disposed in the peripheral region and between the display region and the first dam, wherein the first dam and the second dam are separated from the planarization insulating layer, Wherein, the island dam is arranged between the first dam and the second dam.

11. The display device according to claim 1, further comprising: A thin film transistor, disposed in the display area; A display element electrically connected to the thin film transistor; A planarization insulating layer, disposed between the thin film transistor and the display element; a first dam disposed in the peripheral area; as well as a second dam disposed in the peripheral region and between the display region and the first dam, wherein the first dam and the second dam are separated from the planarization insulating layer, Wherein, the island dam is arranged on the outer side of the first dam facing away from the second dam.

12. The display device according to claim 1, further comprising: a thin film transistor located in the display area and a display element electrically connected to the thin film transistor, The display element further comprises a pixel electrode, a counter electrode arranged to face the pixel electrode, and an intermediate layer located between the pixel electrode and the counter electrode and having a light-emitting layer. The light emitting layer includes quantum dot material.

13. The display device according to claim 12, wherein: The quantum dot material includes a core and a shell surrounding the core, wherein the core includes a material selected from the group consisting of II-VI compounds, III-V compounds, IV-VI compounds, IV elements, IV compounds, and combinations thereof.

14. A display device, comprising: a substrate including a display area, a peripheral area disposed at the periphery of the display area, a pad area disposed in the peripheral area, and a bending area disposed between the display area and the pad area; A thin film transistor, disposed in the display area; A display element electrically connected to the thin film transistor; A data line, providing a data signal to the thin film transistor; An inorganic protective layer, covering the data line; A first voltage line, disposed in the peripheral area; a second voltage line disposed in the peripheral region, wherein the first voltage line and the second voltage line provide a driving voltage to the display element; An island dam is arranged between the display area and the bending area; An encapsulation layer, sealing the display element; an inorganic insulating layer disposed on the substrate and including a groove formed at a position corresponding to the bending area; and an organic material layer disposed in the groove, The island dam includes the same material as the organic material layer, and the inorganic protective layer is disposed between the island dam and the encapsulation layer.

15. The display device according to claim 14, in, The first voltage line includes a first main voltage line disposed between a first side of the display area and the pad area and a first connection unit protruding from the first main voltage line and extending toward the pad area, wherein the second voltage line includes a second main voltage line disposed at the other side of the display area and a second connection unit protruding from an end of the second main voltage line and extending toward the pad area, The island dam is disposed on a layer lower than the first voltage line and the second voltage line, and extends in parallel with the first main voltage line. Wherein, the island dam overlaps with the first connection unit and the second connection unit.

16. The display device according to claim 15, wherein: The island dam is disposed between the first connection unit and the second connection unit, a first end of the island dam overlaps the first connection unit, and a second end of the island dam opposite to the first end overlaps the second connection unit.

17. The display device according to claim 16, wherein: The inorganic insulating layer covers the first connection unit, the second connection unit, and the island dam exposed in a region between the first connection unit and the second connection unit.

18. The display device according to claim 15, further comprising: A planarization insulating layer, disposed between the thin film transistor and the display element; a first dam disposed in the peripheral area; as well as A second dam is disposed in the peripheral area and between the display area and the first dam.

19. The display device according to claim 18, wherein: The island dam is disposed between the display area and the second dam.

20. The display device according to claim 18, wherein: The island dam overlaps at least one of the first dam and the second dam.

21. The display device according to claim 18, wherein: The island dam is disposed between the first dam and the second dam.

22. The display device according to claim 18, wherein: The island dam is arranged on an outer side of the first dam facing away from the second dam.

23. The display device according to claim 18, wherein: The island dam is provided on a layer lower than the first dam and the second dam.

24. The display device according to claim 18, in, The encapsulation layer includes a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer which are sequentially stacked, The first inorganic encapsulation layer directly contacts the inorganic protective layer at a position where the first inorganic encapsulation layer overlaps the island dam.

25. The display device according to claim 24, wherein: The first and second inorganic encapsulating layers contact each other at an outer side of the organic encapsulating layer, and the first and second inorganic encapsulating layers extend to an outer side of the first dam.

26. The display device according to claim 14, wherein: The display element further includes a pixel electrode, a counter electrode disposed to face the pixel electrode, and an intermediate layer located between the pixel electrode and the counter electrode and having a light-emitting layer. The light emitting layer includes quantum dot material.

27. The display device according to claim 26, wherein: The quantum dot material includes a core and a shell surrounding the core, wherein the core includes a material selected from the group consisting of II-VI compounds, III-V compounds, IV-VI compounds, IV elements, IV compounds, and combinations thereof.

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