Display device

Abstract

A display device is provided, which includes an organic insulating layer, a pixel electrode located on the organic insulating layer, a pixel defining layer configured to cover an edge of the pixel electrode, an intermediate layer and a relative electrode, wherein the pixel defining layer has an opening corresponding to the pixel electrode, and the pixel defining layer includes a first layer and a second layer, and the first layer includes an inorganic insulating material, the second layer has a smaller transmittance than the first layer in a first wavelength band, the intermediate layer is located on a portion of the pixel electrode exposed by the opening, the intermediate layer includes an emission layer, and the relative electrode is located on the intermediate layer.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] Korean Patent Application No. 10-2018-0055044, filed on May 14, 2018 in the Korean Intellectual Property Office, and entitled “DISPLAY DEVICE,” is hereby incorporated by reference in its entirety. Technical Field

[0003] Embodiments relate to a display device. Background Art

[0004] Organic light emitting display devices do not require an additional light source and can therefore be driven with a low voltage and made thin and light. Furthermore, organic light emitting display devices have advantageous characteristics such as a wide viewing angle, a high contrast ratio, and a fast response speed, and thus have attracted attention as next generation display devices. Summary of the invention

[0005] An embodiment relates to a display device, including an organic insulating layer, a pixel electrode located on the organic insulating layer, and a pixel defining layer covering an edge of the pixel electrode. The pixel defining layer has an opening corresponding to the pixel electrode. The pixel defining layer includes a first layer and a second layer, wherein the first layer includes an inorganic insulating material, the second layer has a smaller transmittance than the first layer in a first wavelength band, and the display device also includes an intermediate layer and an opposite electrode, wherein the intermediate layer is located on a portion of the pixel electrode exposed by the opening, the intermediate layer includes an emission layer, and the opposite electrode is located on the intermediate layer.

[0006] The first wavelength band may be in the range of 10 nm to 400 nm.

[0007] The light transmittance of the second layer in the first wavelength band may be 2% or less.

[0008] The pixel electrode may be a first pixel electrode. The display device may further include a second pixel electrode adjacent to the first pixel electrode. A portion of the organic insulating layer exposed between the first pixel electrode and the second pixel electrode may be completely covered by the second layer.

[0009] The first layer may include at least one of silicon oxide and silicon nitride.

[0010] The second layer may include amorphous silicon.

[0011] The second layer may include or greater thickness of the amorphous silicon layer.

[0012] The second layer may include an amorphous carbon-based material that absorbs light in the first wavelength band. The amorphous carbon-based material does not include diamond-like carbon (DLC).

[0013] The first layer may be located between the organic insulating layer and the second layer. A portion of the first layer may be in direct contact with the organic insulating layer.

[0014] The display device may further include a third layer located on the second layer. The third layer may include an inorganic insulating material. The second layer may be located between the first layer and the third layer.

[0015] The second layer may include a first sublayer and a second sublayer. A sublayer closer to the organic insulating layer from among the first sublayer and the second sublayer may have a greater light absorptivity than the other sublayer.

[0016] An embodiment also relates to a display device, including a substrate, a thin film transistor located on the substrate, an organic insulating layer covering the thin film transistor, a pixel electrode electrically connected to the thin film transistor through a contact hole of the organic insulating layer, a pixel defining layer covering an edge of the pixel electrode, a spacer located on the pixel defining layer, an intermediate layer and a relative electrode, wherein the pixel defining layer has an opening corresponding to the pixel electrode, and the pixel defining layer includes a first layer and a second layer, the second layer has a smaller transmittance than the first layer in a first wavelength band, the intermediate layer is located on a portion of the pixel electrode exposed by the opening, the intermediate layer includes an emission layer, and the relative electrode is located on the intermediate layer.

[0017] The pixel electrode may be a first pixel electrode. The display device further includes a second pixel electrode. A portion of the organic insulating layer exposed between the first pixel electrode and the second pixel electrode may be completely covered by the second layer.

[0018] The first wavelength band may be in the range of 10 nm to 400 nm.

[0019] The light transmittance of the second layer in the first wavelength band may be 2% or less.

[0020] The display device may further include a third layer covering the second layer, the second layer being located between the first layer and the third layer.

[0021] The first layer and the third layer may include an inorganic insulating material having a greater light transmittance in the first wavelength band than the second layer.

[0022] A portion of the first layer may be in direct contact with the organic insulating layer.

[0023] The second layer may include at least one of amorphous silicon and an amorphous carbon-based material, wherein the amorphous carbon-based material does not include diamond-like carbon (DLC).

[0024] The second layer may include a first sublayer and a second sublayer. A sublayer closer to the organic insulating layer from among the first sublayer and the second sublayer may have a greater light absorptivity than the other sublayer. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Features will become apparent to those skilled in the art by describing in detail exemplary embodiments with reference to the accompanying drawings, in which:

[0026] Figure 1 A schematic plan view showing a display device according to an embodiment;

[0027] Figure 2 An equivalent circuit diagram of a pixel of a display device according to an embodiment is shown;

[0028] Figure 3 shows a schematic cross-sectional view of a display device according to an embodiment;

[0029] Figure 4 shows a schematic cross-sectional view of a display device according to another embodiment;

[0030] Figure 5 A graph showing light transmittance according to the thickness of an amorphous silicon layer;

[0031] Figure 6 shows a schematic cross-sectional view of a display device according to another embodiment;

[0032] Figure 7 Shows Figure 6 an enlarged view of a portion of a cross-sectional view of;

[0033] Figure 8 Shows Figure 7 A modified cross-sectional view of an embodiment of the invention; and

[0034] Fig. 9 A cross-sectional view of a stacked structure of pixel defining layers according to another embodiment is shown. DETAILED DESCRIPTION

[0035] Exemplary embodiments will now be described more fully below with reference to the accompanying drawings; however, they may be implemented in different forms and should not be construed as being limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey exemplary embodiments to those skilled in the art.

[0036] In the accompanying drawings, the sizes of layers and regions may be exaggerated for clarity. It should also be understood that when a layer or element is referred to as being "on" another layer or substrate, the layer or element may be directly on the other layer or substrate, or there may be an intermediate layer. In addition, it should be understood that when a layer is referred to as being "below" another layer, the layer may be directly below, or there may be one or more intermediate layers. In addition, it should be understood that when a layer is referred to as being "between" two layers, the layer may be the only layer between the two layers, or there may be one or more intermediate layers. The same reference numerals represent the same elements throughout.

[0037] It should be understood that although the terms "first", "second", "third", etc. may be used herein to describe various components, these components should not be limited by these terms. These components are only used to distinguish one component from another component.

[0038] As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.

[0039] Figure 1 A plan view of a display device according to an embodiment is shown.

[0040] Reference Figure 1 , the display device includes a substrate 100. The substrate 100 may include a display area DA and a peripheral area PA located around the display area DA.

[0041] A plurality of pixels PX may be arranged on the display area DA. Each pixel PX may include a pixel circuit including a thin film transistor electrically connected to a signal line and a power line, a storage capacitor, etc., and a display element (eg, an organic light emitting diode (OLED)) connected to the pixel circuit.

[0042] The pixel PX may emit, for example, red light, green light, blue light, or white light via an OLED. As described above, the pixel PX as described herein may be understood as a pixel that emits one of red light, green light, blue light, and white light. The display area DA may be covered with an encapsulation layer and thus may be protected from ambient air, moisture, and the like. When the display element included in the pixel PX is an OLED, the pixel PX may include at least a storage capacitor and at least a driving thin film transistor and a switching thin film transistor.

[0043] Figure 2 An equivalent circuit diagram of a pixel PX of a display device according to an embodiment is shown.

[0044] Reference Figure 2 , the pixel PX includes a pixel circuit PC and a display element connected to the pixel circuit PC. Figure 2An OLED is shown as a display element. The pixel circuit PC may include a first thin film transistor T1, a second thin film transistor T2, and a storage capacitor Cst.

[0045] The second thin film transistor T2 as a switching thin film transistor may be connected to the scan line SL and the data line DL, and may transmit a data voltage received via the data line DL to the first thin film transistor T1 according to a switching voltage received via the scan line SL. A storage capacitor Cst may be connected to the second thin film transistor T2 and the driving voltage line PL. The storage capacitor Cst may store a voltage corresponding to a difference between a voltage received from the second thin film transistor T2 and a first power supply voltage ELVDD supplied to the driving voltage line PL.

[0046] The first thin film transistor T1 as a driving thin film transistor is connected to the driving voltage line PL and the storage capacitor Cst, and can control the driving current Id flowing from the driving voltage line PL to the OLED according to the voltage value stored in the storage capacitor Cst. The OLED can emit light with a certain brightness according to the driving current Id. The opposite electrode (e.g., cathode) of the OLED can receive the second power supply voltage ELVSS.

[0047] exist Figure 2 2 shows a case where the pixel circuit PC includes two thin film transistors and one storage capacitor. In some embodiments, the number of thin film transistors and the number of storage capacitors may vary according to the design of the pixel circuit PC.

[0048] Figure 3 1 shows a cross-sectional view of a display device according to an embodiment. The cross-sectional view corresponds to a cross-sectional view taken along Figure 1 A cross-sectional view taken along line III-III'.

[0049] Reference Figure 3 , the thin film transistor TFT and the storage capacitor Cst may be disposed on the substrate 100. The thin film transistor TFT and the storage capacitor Cst may be covered by the planarization insulating layer 170.

[0050] The substrate 100 may include a polymer resin such as polyethersulfone (PES), polyacrylate (PAR), polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyallyl ester, polyimide (PI), polycarbonate (PC), or cellulose acetate propionate (CAP).

[0051] A buffer layer 110 for helping to prevent impurities from penetrating into the semiconductor layer of the thin film transistor TFT, a gate insulating layer 130 for insulating the semiconductor layer of the thin film transistor TFT from the gate of the thin film transistor TFT, an interlayer insulating layer 150 for insulating the source and drain of the thin film transistor TFT from its gate, and a planarizing insulating layer 170 for covering the thin film transistor TFT may be formed on the substrate 100. The planarizing insulating layer 170 may have an approximately flat top surface.

[0052] The buffer layer 110, the gate insulating layer 130, and the interlayer insulating layer 150 may include an inorganic insulating material such as silicon oxide (SiO x ), Silicon Nitride (SiN x ) or silicon oxynitride (SiON). The planarization insulating layer 170 may include an organic insulating material. The organic insulating material may include at least one of acryl, benzocyclobutene (BCB), PI, hexamethyldisiloxane (HMDSO), and the like.

[0053] The pixel electrode 210 may be disposed on the planarization insulating layer 170. The pixel electrode 210 may be disposed in each pixel PX and may be spaced apart from its adjacent (neighboring) pixel electrode 210. For ease of discussion, Figure 3 , Figure 4 and Figure 6 The pixel electrodes 210 shown on the left and right sides of the figure may be collectively referred to as adjacent pixel electrodes 210, or may be referred to as first pixel electrodes and second pixel electrodes, respectively. The pixel electrodes 210 may include conductive oxides such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In 2 O 3 ), indium gallium oxide (IGO) or aluminum zinc oxide (AZO). In some embodiments, the pixel electrode 210 may include a reflective layer, wherein the reflective layer includes silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr) or a compound of these materials. In some embodiments, the pixel electrode 210 may also include a reflective layer composed of ITO, IZO, ZnO or In above / below the reflective layer. 2 O 3 The film formed.

[0054] The pixel defining layer 180 may cover the edge of the pixel electrode 210. The pixel electrode 210 may be exposed through the opening in the pixel defining layer 180. A spacer 190 may be positioned on the pixel defining layer 180. The spacer 190 may be island-shaped. A plurality of spacers 190 may be disposed spaced apart from each other in the display area DA. The spacer 190 may include an organic insulating material or / and an inorganic insulating material.

[0055] The pixel defining layer 180 may include two layers having different light transmittances in the first wavelength band. Figure 3 It is shown that the pixel defining layer 180 includes a first layer 181 and a second layer 182 .

[0056] The transmittance of the second layer 182 in the first wavelength band may be less than the transmittance of the first layer 181. The first wavelength band may include an ultraviolet (UV) wavelength band. The first wavelength band may be a wavelength band ranging from about 10 nm to about 400 nm. The transmittance of the second layer 182 in the above-mentioned first wavelength band may be less than or equal to, for example, about 3%, or, for example, may be less than or equal to, for example, about 2%.

[0057] The planarization insulating layer 170 below the pixel defining layer 180 may include an organic insulating material. When energy such as heat or light is applied to the organic insulating material during or after the manufacturing process of the display device, the material contained in the organic insulating material may be vaporized and discharged to the outside. This phenomenon is called outgassing. The gas generated by outgassing may damage the layers located on the planarization insulating layer 170 (for example, the intermediate layers 220R and 220G and the relative electrode 230), causing the OLED of each pixel PX to become defective. However, according to an embodiment, the pixel defining layer 180 may include a second layer 182 having a low level of transmittance in the first wavelength band. Therefore, light in the first wavelength band can be prevented from being transmitted from the outside (for example, from Figure 3 The upper side of the planarization insulating layer 170) advances toward the planarization insulating layer 170. Therefore, the above-mentioned outgassing can be prevented or minimized.

[0058] The second layer 182 may completely cover a portion of the planarization insulating layer 170 that is not overlapped by the pixel electrode 210. In this regard, Figure 3 It is shown that the first width W1 of the second layer 182 is greater than the second width W2 of a portion of the planarization insulating layer 170 exposed between adjacent pixel electrodes 210. The second width W2 may be understood as the distance between adjacent pixel electrodes 210. The portion of the planarization insulating layer 170 located between adjacent pixel electrodes 210 and not covered by the pixel electrodes 210 may be completely covered by the second layer 182. Therefore, light in the first wavelength band traveling toward the planarization insulating layer 170 from the outside as described above may be effectively prevented from reaching the planarization insulating layer 170.

[0059] The second layer 182 may include a material that absorbs or reflects light in the first wavelength band. For example, the second layer 182 may include amorphous silicon having a relatively large reflectivity. When the second layer 182 includes an amorphous silicon layer, the thickness of the amorphous silicon layer (corresponding to the second thickness t2 of the second layer 182) may be formed to be approximately or larger. Figure 5 FIG. 2 shows a curve diagram of light transmittance according to different thicknesses when the second layer 182 is an amorphous silicon layer. Figure 5As shown in , the light transmittance in the first wavelength band may be controlled to be 2% or less. The second thickness t2 of the second layer 182 may be formed to be smaller than the first thickness t1 of the first layer 181 .

[0060] The second layer 182 may include an amorphous carbon-based material having a relatively large light absorptivity. In this case, the second layer 182 including the amorphous carbon-based material may have a smaller thickness than the amorphous silicon layer. Herein, the term "amorphous carbon-based material" does not include diamond-like carbon (DLC).

[0061] The second layer 182 may include a mixture of the above-mentioned amorphous silicon and the above-mentioned amorphous carbon-based material (excluding DLC). For example, the amorphous carbon-based material excluding DLC ​​may have a reflectivity of about 1% or less. In some embodiments, the second layer 182 may include various types of materials other than the above-mentioned amorphous silicon and the above-mentioned amorphous carbon-based material (excluding DLC), as long as these materials can control the transmittance to about 2% or less in the first wavelength band. According to an embodiment, the second layer 182 may include chromium oxide, etc.

[0062] The first layer 181 of the pixel defining layer 180 may include an inorganic insulating material. The first layer 181 may passivate the planarization insulating layer 170, and the planarization insulating layer 170 may include an organic insulating layer. The first layer 181 may include at least one of silicon oxide and silicon nitride. A portion of the first layer 181 may be in direct contact with the top surface of the planarization insulating layer 170. In the comparative example, when the first layer 181 is formed of an organic insulating material, the gas generated in the planarization insulating layer 170 may travel along the first layer 181 formed of the organic insulating material and damage the intermediate layers 220R and 220G and the opposite electrode 230. However, according to the present embodiment, the first layer 181, which is the lowest layer of the pixel defining layer 180, may be formed of an inorganic insulating material. Therefore, even if a small amount of gas is generated in the planarization insulating layer 170, the gas may be prevented from passing through the first layer 181 and traveling toward the intermediate layers 220R and 220G and / or the opposite electrode 230 disposed above the first layer 181. Therefore, defects may be prevented from occurring in the OLED.

[0063] The intermediate layers 220R and 220G are respectively located on respective portions of the pixel electrode 210 exposed through the opening of the pixel defining layer 180. In this regard, Figure 3 Intermediate layers 220R and 220G, which are respectively disposed on the pixel electrode 210 and emit light of different colors, are shown.

[0064] The intermediate layers 220R and 220G may include emission layers 222R and 222G, respectively, and the emission layers 222R and 222G include materials that emit red light and green light, respectively. In some embodiments, an OLED including an emission layer that emits blue light may also be included. The stacked structure of the pixel PX including the OLED that emits blue light may be the same as Figure 3 The stacked structure of each OLED including emission layers 222R and 222G that respectively emit red light and green light is the same.

[0065] Each of the intermediate layers 220R and 220G may include at least one of a first functional layer 221 and a second functional layer 223 disposed above and below each of the emission layers 222R and 222G, respectively.

[0066] The first functional layer 221 may be a single layer or a multilayer. For example, when the first functional layer 221 is formed of a high molecular weight material, the first functional layer 221 may be a hole transport layer (HTL) having a single layer structure. For example, the first functional layer 221 may be formed of poly (3,4) ethylene dihydroxythiophene (PEDOT) or polyaniline (PANI). When the first functional layer 221 is formed of a low molecular weight material, the first functional layer 221 may include a hole injection layer (HIL) and a hole transport layer (HTL).

[0067] The second functional layer 223 may cover the emission layers 222R and 222G. The second functional layer 223 may be selective. When the first functional layer 221 and the emission layers 222R and 222G are formed of a low molecular weight material, the second functional layer 223 may be provided to improve the characteristics of the OLED.

[0068] The second functional layer 223 may be a single layer or a multi-layer. The second functional layer 223 may include an electron transport layer (ETL) and / or an electron injection layer (EIL).

[0069] The opposing electrode 230 may be formed of a conductive material having a low work function. For example, the opposing electrode 230 may include a (semi) transparent layer, wherein the (semi) transparent layer includes silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca) or alloys of these materials. In some embodiments, the opposing electrode 230 may further include a conductive material such as ITO, IZO, ZnO or In on the (semi) transparent layer including any of the above materials. 2 O 3 layer.

[0070] According to an embodiment, the opposite electrode 230 may include Al, Ag, Mg, an alloy of Mg and Ag (Mg:Ag), or the like.

[0071] The packaging member may be disposed on the counter electrode 230. Figure 3 As shown in , an example of an encapsulation member may include a thin film encapsulation layer 300A, wherein the thin film encapsulation layer 300A includes at least one inorganic encapsulation layer and at least one organic encapsulation layer. Figure 3 As shown in FIG. 1 , the thin film encapsulation layer 300A may include a first inorganic encapsulation layer 310 and a second inorganic encapsulation layer 330 and an organic encapsulation layer 320 located between the first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330. In some embodiments, the stacking order of the inorganic encapsulation layer and the organic encapsulation layer and the number of the inorganic encapsulation layer and the organic encapsulation layer may be changed.

[0072] According to the implementation mode, Figure 4 As shown in , the packaging component may include a packaging substrate 300B. The packaging substrate 300B may be glass. In this case, the spacer 190 may keep the interval between the substrate 100 and the packaging substrate 300B constant, thereby preventing or minimizing Newton rings that may be caused by sagging of the packaging substrate 300B. Figure 3 When the flexible thin film encapsulation layer 300A is shown, the spacer 190 can support the mask used during the formation of the emission layers 222R and 222G, thereby preventing or minimizing defects that may occur if the mask is allowed to sag during the formation of the emission layers 222R and 222G. The sealant surrounding the display area DA can be positioned between the substrate 100 and the encapsulation substrate 300B.

[0073] Figure 6 A cross-sectional view of a display device according to an embodiment is shown. Figure 7 Shows Figure 6 An enlarged view of a portion of a cross-sectional view.

[0074] and Figure 3 Compared with the display device, Figure 6 The display device may include a pixel defining layer 180, and the pixel defining layer 180 further includes a third layer 183. Figure 6 A thin film encapsulation layer 300A including a first inorganic encapsulation layer 310 and a second inorganic encapsulation layer 330 and an organic encapsulation layer 320 located between the first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 is shown as an encapsulation member. In some embodiments, the encapsulation member may be as described above with reference to Figure 4 The components other than the pixel defining layer 180 may be the same as those described above. Figure 3 The components described are the same. We will now focus on Figure 3 and Figure 6 The differences between the display devices are described.

[0075] Reference Figure 6 and Figure 7, the pixel defining layer 180 may include a first layer 181, a second layer 182, and a third layer 183. As described above, the first layer 181 may cover the edge of the pixel electrode 210 disposed thereunder while contacting the edge of the pixel electrode 210. The first layer 181 may be in direct contact with a portion of the planarization insulating layer 170 located between adjacent pixel electrodes 210. The transmittance of the second layer 182 in the first wavelength band may be less than the transmittance of the first layer 181. The second layer 182 may have a first width W1 that is greater than the second width W2 of the portion of the planarization insulating layer 170 exposed between adjacent pixel electrodes 210. Detailed features related thereto are as described above. The material and structure of the second layer 182 may be as described above, which helps prevent OLED defects caused by degassing by blocking light from the outside toward the planarization insulating layer 170.

[0076] The third layer 183 may be disposed on the second layer 182 so that the third layer 183 covers the second layer 182. Similar to the first layer 181, the third layer 183 may include at least one of the materials having a greater light transmittance in the first wavelength band than the second layer 182. For example, the third layer 183 may include silicon nitride and silicon oxynitride. When the third layer 183 covers the second layer 182, the material included in the second layer 182 may be prevented from affecting the intermediate layers 220R and 220G or the opposite electrode 230 during or after the process of manufacturing the display device. In addition, the third layer 183 and the first layer 181 may also passivate the planarization insulating layer 170. Therefore, organic light emitting defects caused by degassing may be effectively reduced or prevented.

[0077] The third layer 183 may include the same material as that used to form the spacer 190 directly disposed on the third layer 183. The spacer 190 and the third layer 183 may be patterned together in the same mask process using half-tone or the like.

[0078] The thickness t3 of the third layer 183 may be greater than the thickness t2 of the second layer 182. The thickness t1 of the first layer 181 may be greater than the thickness t2 of the second layer 182. The thickness t1 of the first layer 181 and the thickness t3 of the third layer 183 may be equal to or different from each other.

[0079] like Figure 7 As shown in FIG. 1 , respective side surfaces of the first layer 181, the second layer 182, and the third layer 183 sequentially stacked on each other may constitute the side surface of the pixel defining layer 180. The layer included in the intermediate layer (e.g., the first functional layer 221) may be in contact with respective side surfaces of the first layer 181, the second layer 182, and the third layer 183 constituting the side surface of the pixel defining layer 180.

[0080] Figure 8 Shows Figure 7 A modified cross-sectional view of an embodiment of the present invention.

[0081] and Figure 7 Similar to the pixel defining layer 180, Figure 8 The pixel defining layer 180 may include a first layer 181, a second layer 182', and a third layer 183 sequentially stacked on each other. Figure 8 The components other than the second layer 182' are the same as those described above with reference to Figure 3 , Figure 6 and Figure 7 The components described are the same. Now we will focus on the differences between them and describe them.

[0082] like Figure 8 As shown in , the edge of the second layer 182' may be disposed to be separated from the edge of the first layer 181 by a certain interval Δd. The third layer 183 may be in contact with the second layer 182'. The edge of the third layer 183 may be in direct contact with the top surface of the first layer 181. The top surface and the side surface of the second layer 182' may be covered by the third layer 183, and the bottom surface of the second layer 182' may be in contact with the first layer 181. The respective side surfaces of the first layer 181 and the third layer 183 may constitute the side surface of the pixel defining layer 180.

[0083] And in Figure 8 In an embodiment, the width W1' of the second layer 182' may be greater than the width W2' of a portion of the planarization insulating layer 170 exposed between adjacent pixel electrodes 210. Therefore, external light in the first wavelength band may be prevented from traveling toward the planarization insulating layer 170.

[0084] Fig. 9 A cross-sectional view illustrating a stack structure of a pixel defining layer 180 according to an embodiment is shown.

[0085] Reference Fig. 9 , the pixel defining layer 180 may include a first layer 181, a second layer 182, and a third layer 183 sequentially stacked on each other. The second layer 182 may include a plurality of layers. In this regard, Fig. 9 A second layer 182 is shown including a first sub-layer 182a and a second sub-layer 182b.

[0086] As described above, the second layer 182 including the first and second sublayers 182a and 182b may have lower transmittance in the first wavelength band than the first and third layers 181 and 183. The material of the first sublayer 182a may be different from that of the second sublayer 182b.

[0087] According to an embodiment, the second sublayer 182b as an upper layer may include a material that mainly reflects light in the first wavelength band. For example, the material of the second sublayer 182b may be amorphous silicon. The first sublayer 182a as a lower layer may include a material that mainly absorbs light in the first wavelength band. For example, the material of the first sublayer 182a may be an amorphous carbon-based material (excluding DLC) or chromium oxide. Most of the external light L incident on the second layer 182 having the above-mentioned structure may be reflected by the second sublayer 182b. Light not reflected by the second sublayer 182b may be absorbed by the first sublayer 182a. Therefore, outgassing that may occur from the planarization insulating layer 170 including an organic insulating material can be effectively prevented or minimized.

[0088] Fig. 9 The second layer 182 shown in FIG. 1 includes two sub-layers. In some embodiments, the number of sub-layers included in the second layer 182 may vary depending on the material and thickness.

[0089] Reference Fig. 9 The structure of the second layer 182 including multiple sub-layers described above can also be applied to Figures 3 to 8 The structure of the pixel defining layer 180 is described above and is also applicable to structures derived therefrom.

[0090] By way of summary and review, a general organic light emitting diode (OLED) of an organic light emitting display device may be damaged by moisture, oxygen or impurities such as gases generated during or after a process of manufacturing the OLED, and in this case, the lifespan and quality of the organic light emitting display device may be deteriorated.

[0091] According to the embodiments, damage to a display element due to impurities such as gas generated in an insulating layer may be effectively prevented, and thus a high-quality display device may be provided.

[0092] Exemplary embodiments have been disclosed herein, and although specific terms are employed, they are used and interpreted in a general and descriptive sense only, and not for purposes of limitation. In some cases, as will be apparent to one of ordinary skill in the art upon filing of this application, unless otherwise expressly indicated, features, characteristics, and / or elements described in conjunction with a particular embodiment may be used alone or in combination with features, characteristics, and / or elements described in conjunction with other embodiments. Therefore, it will be understood by those skilled in the art that various changes in form and detail may be made without departing from the spirit and scope as set forth in the appended claims.

Claims

1. A display device, comprising: Organic insulating layer; A pixel electrode, wherein the pixel electrode is located on the organic insulating layer; A pixel defining layer, the pixel defining layer covers the edge of the pixel electrode, the pixel defining layer has an opening corresponding to the pixel electrode, and the pixel defining layer includes: a first layer, the first layer comprising an inorganic insulating material; a second layer having a smaller light transmittance than the first layer in a first wavelength band; and a third layer covering the second layer and including an inorganic insulating material having a greater light transmittance in the first wavelength band than that of the second layer, wherein the second layer is located between the first layer and the third layer; an intermediate layer, the intermediate layer being located on a portion of the pixel electrode exposed through the opening, the intermediate layer comprising an emission layer; and The counter electrode is located on the intermediate layer.

2. The display device according to claim 1, wherein: The first wavelength band is in the range of 10 nm to 400 nm.

3. The display device according to claim 1, wherein: The light transmittance of the second layer in the first wavelength band is 2% or less.

4. The display device according to claim 1, wherein: The pixel electrode is a first pixel electrode, and the display device further includes: a second pixel electrode, the second pixel electrode being adjacent to the first pixel electrode, and A portion of the organic insulating layer exposed between the first pixel electrode and the second pixel electrode is completely covered by the second layer.

5. The display device according to claim 1, wherein: The first layer includes at least one of silicon oxide and silicon nitride.

6. The display device according to claim 1, wherein: The second layer includes amorphous silicon.

7. The display device according to claim 6, wherein: The second layer includes or greater thickness of the amorphous silicon layer.

8. The display device according to claim 1, wherein: The second layer includes an amorphous carbon-based material that absorbs light in the first wavelength band, the amorphous carbon-based material not including diamond-like carbon.

9. The display device according to claim 1, wherein: The first layer is located between the organic insulating layer and the second layer, and a portion of the first layer is in direct contact with the organic insulating layer.

10. The display device according to claim 1, wherein: The second layer includes a first sub-layer and a second sub-layer, and a sub-layer closer to the organic insulating layer from among the first sub-layer and the second sub-layer has a greater light absorptivity than the other sub-layer.

11. A display device, comprising: substrate; A thin film transistor, wherein the thin film transistor is located on the substrate; an organic insulating layer, wherein the organic insulating layer covers the thin film transistor; a first pixel electrode, the first pixel electrode being electrically connected to the thin film transistor through a contact hole of the organic insulating layer; a second pixel electrode, the second pixel electrode being adjacent to the first pixel electrode; a pixel defining layer, the pixel defining layer covering edges of the first pixel electrode and the second pixel electrode, the pixel defining layer having a first opening corresponding to the first pixel electrode and a second opening corresponding to the second pixel electrode, and the pixel defining layer comprising a first layer, a second layer and a third layer, the second layer having a smaller light transmittance than the first layer in a first wavelength band, the second layer being located between the first layer and the third layer, and a width of the second layer between the first opening and the second opening being greater than a width between the first pixel electrode and the second pixel electrode; a spacer, the spacer being located on the pixel defining layer; an intermediate layer, the intermediate layer being located on a portion of the first pixel electrode exposed through the first opening, the intermediate layer comprising an emission layer; and The counter electrode is located on the intermediate layer.

12. The display device according to claim 11, wherein: A portion of the organic insulating layer exposed between the first pixel electrode and the second pixel electrode is completely covered by the second layer.

13. The display device according to claim 11, wherein: The first wavelength band is in the range of 10 nm to 400 nm.

14. The display device according to claim 13, wherein: The light transmittance of the second layer in the first wavelength band is 2% or less.

15. The display device according to claim 11, wherein: A portion of the first layer is in direct contact with the organic insulating layer.

16. The display device according to claim 11, wherein: The second layer includes at least one of amorphous silicon and an amorphous carbon-based material, wherein the amorphous carbon-based material does not include diamond-like carbon.

17. The display device according to claim 11, wherein: The second layer includes a first sub-layer and a second sub-layer, and a sub-layer closer to the organic insulating layer from among the first sub-layer and the second sub-layer has a greater light absorptivity than the other sub-layer.

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