Multi-wavelength light source equipment, multi-function projector, and electronic equipment

Abstract

A light source device is disclosed, comprising: a substrate; a first light-emitting element formed on the substrate and comprising a first reflective layer, a second light-emitting layer configured to emit light of a second wavelength, a first etch stop layer, the first light-emitting layer configured to emit light of a first wavelength, the first wavelength being different from the second wavelength, and a first nanostructure reflective layer; and a second light-emitting element formed on the substrate, spaced apart from the first light-emitting element, and comprising a second reflective layer having the same material and thickness as the first reflective layer, a third light-emitting layer having the same material and structure as the second light-emitting layer and configured to generate light of the second wavelength, a second etch stop layer having the same material and thickness as the first etch stop layer, and a second nanostructure reflective layer.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims the priority of Korean Patent Application No. 10-2018-0064909 filed on June 5, 2018 in the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0003] The present disclosure relates to a multi-wavelength light source device, a multi-function projector including the multi-wavelength light source device, and an electronic device including the multi-function projector. Background Art

[0004] Various sensors such as aperture sensors or depth sensors are used in mobile and wearable devices. In addition, there is a trend to reduce the size and power consumption of sensors used in fields such as tablets, personal computers, drones or the Internet of Things (IoT).

[0005] Existing sensors use micro-optical technology according to their functions and include lighting components required by projectors or scanners. Therefore, many light sources and optical elements are required, and the volume occupied by these optical elements is a factor that affects the design accuracy and manufacturing conditions of the sensor. Summary of the invention

[0006] A light source device for emitting light in multiple wavelength bands is provided.

[0007] Provided are a multifunctional projector including the light source device and an electronic device including the multifunctional projector.

[0008] Additional aspects will be set forth in part in the description which follows and, in part, will be apparent from the description, or may be learned by practice of the presented embodiments.

[0009] According to one aspect of the embodiment, a light source device includes: a substrate; a first light-emitting element formed on the substrate and including a first reflective layer, a second light-emitting layer configured to emit light of a second wavelength, a first etch stop layer, the first light-emitting layer configured to emit light of a first wavelength, the first wavelength being different from the second wavelength, and a first nanostructure reflective layer; and a second light-emitting element formed on the substrate, spaced apart from the first light-emitting element, and including a second reflective layer having the same material and thickness as the first reflective layer, a third light-emitting layer having the same material and structure as the second emission layer and configured to generate light of a second wavelength, a second etch stop layer having the same material and thickness as the first etch stop layer, and a second nanostructure reflective layer.

[0010] The light source device may have a monolithic structure.

[0011] The first wavelength may be greater than the second wavelength.

[0012] Each of the first light emitting layer and the second light emitting layer may have a quantum well structure, wherein a band gap energy of the quantum well structure of the first light emitting layer is smaller than a band gap energy of the quantum well structure of the second light emitting layer.

[0013] The distance between the first reflective layer and the first nanostructure reflective layer may be set such that the first light emitting element is configured to emit light of the second wavelength.

[0014] A distance between the first reflective layer and the first nanostructure reflective layer may be a first integer multiple of the first wavelength.

[0015] A distance between the second reflective layer and the second nanostructure reflective layer may be a second integer multiple of the second wavelength.

[0016] The first integer may be greater than the second integer.

[0017] The difference between the first wavelength and the second wavelength may be about 50 nm or more.

[0018] The first wavelength may be in the infrared band and the second wavelength may be in the visible light band.

[0019] The first light emitting element and the second light emitting element may emit light of different polarizations.

[0020] The first nanostructure reflective layer may include a plurality of first nanostructures having sub-wavelength shape dimensions with respect to light of a first wavelength.

[0021] The second nanostructure reflective layer may include a plurality of second nanostructures having sub-wavelength shape dimensions with respect to light of a second wavelength.

[0022] The first light emitting elements may be disposed along a plurality of rows that are spaced apart from and parallel to each other, and the second light emitting elements may be disposed along a plurality of rows that alternate with the plurality of rows.

[0023] According to one aspect of another embodiment, a multifunctional projector includes: the light source device; a controller configured to control the light source device so as to selectively drive a first light-emitting element or a second light-emitting element; and a nanostructure light modulation layer, disposed on an optical path of light emitted from the light source device, including a plurality of nanostructures, and configured to modulate the light emitted from the light source device, wherein the plurality of nanostructures have a sub-wavelength shape size that is smaller than the wavelength of the light emitted from the light source device.

[0024] The nanostructure light modulation layer may be configured to modulate light emitted from the first light emitting element differently than light emitted from the second light emitting element.

[0025] The first light emitting element and the second light emitting element may be configured to emit light of different polarizations.

[0026] The nanostructure light modulation layer may be configured to modulate light emitted from the first light emitting element into predetermined structured light, and to modulate light emitted from the second light emitting element into uniform light.

[0027] The plurality of nanostructures of the nanostructure light modulation layer may have an asymmetric cross-sectional shape.

[0028] According to an aspect of another embodiment, an electronic device includes: the multifunctional projector, wherein the multifunctional projector is configured to irradiate light to an object; a sensor, configured to receive light reflected from the object; and a processor, configured to perform calculations to obtain shape information of the object from the light received by the sensor.

[0029] The processor may be configured to perform different calculations depending on the wavelength of light emitted from the multifunction projector.

[0030] The multifunctional projector may be configured to form structured light according to light emitted from the first light emitting element, and to form uniform light according to light emitted from the second light emitting element.

[0031] The processor may be configured to perform user authentication using a facial recognition method when the multifunctional projector emits structured light onto the object, and to perform user authentication using an iris recognition method when the multifunctional projector emits uniform light onto the object. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] These and / or other aspects will become clear and more easily understood through the following description of the embodiments in conjunction with the accompanying drawings, in which:

[0033] Figure 1 is a perspective view showing a schematic configuration of a light source device according to the embodiment;

[0034] Figure 2 It shows that Figure 1 A plan view of an arrangement of a plurality of light emitting elements included in the light source device shown in FIG.

[0035] Figure 3A and Figure 3B They are shown in Figure 1 Detailed perspective view and cross-sectional view of a first light emitting element provided in a light source device of FIG.

[0036] Figure 4 Shown in Figure 1 An example structure of a first nanostructure reflective layer provided in a first light emitting element of a light source device;

[0037] Figure 5A and Figure 5B They are shown in Figure 1 Detailed perspective view and cross-sectional view of a second light emitting element provided in a light source device of FIG.

[0038] Figure 6 Shown in Figure 1 An example structure of a second nanostructure reflective layer provided in a second light emitting element of a light source device;

[0039] Figure 7 It shows Figure 1 A detailed enlarged cross-sectional view of a portion of a light source device;

[0040] Fig. 8A and Figure 8B is a perspective view of the multifunctional projector according to the embodiment, and shows that a first modulated light is formed according to light of a first light emitting element and a second modulated light is formed according to light of a second light emitting element, respectively;

[0041] Figures 9 to 11 It shows that it can be Fig. 8A and Figure 8B A perspective view of example shapes of nanostructures included in a nanostructure light modulation layer;

[0042] Fig.12 is a block diagram schematically showing an electronic device according to an embodiment; and

[0043] Fig.13 is a block diagram schematically showing an electronic device according to another embodiment. DETAILED DESCRIPTION

[0044] Now with reference to the embodiment in detail, examples of the embodiments are shown in the accompanying drawings, wherein similar reference numerals throughout the accompanying drawings represent similar elements. In this regard, the embodiments proposed may have different forms and should not be construed as being limited to the description set forth herein. Therefore, the embodiments are described below only by reference to the accompanying drawings to explain various aspects. The term "and / or" as used herein includes any and all combinations of one or more of the related listed items. Statements such as "at least one of ... " modify the entire element list when it is before the element list, rather than modifying the individual elements in the list.

[0045] Hereinafter, embodiments will be described with reference to the accompanying drawings. The embodiments described herein are for illustrative purposes only, and various modifications may be made thereto. In the accompanying drawings, like reference numerals refer to like elements, and the size of the elements may be exaggerated for clarity of description.

[0046] In the following description, when an element is referred to as being 'on' or "over" another element, it may be directly on the other element while making contact with the other element, or may be on the other element without making contact with the other element.

[0047] Although the terms “first” and “second” are used to describe various elements, these terms are only used to distinguish one element from another element. These terms do not limit the elements to have different materials or structures.

[0048] As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "include" and / or "comprises" used herein indicate the presence of stated features or elements, but do not preclude the presence or addition of one or more other features or elements.

[0049] In the present disclosure, terms such as “unit” or “module” are used to indicate a unit that has at least one function or operation and is implemented as hardware, software, or a combination of hardware and software.

[0050] The operations described in the embodiments are examples and are not intended to limit the scope of the inventive concept. In the present disclosure, for the sake of simplicity, descriptions of known electrical components, control systems, software, and other functional aspects thereof may not be given. In addition, in the accompanying drawings, the connecting lines or connecting members between elements are exemplary functional, physical, and / or electrical connections, which can be replaced by other functional, physical, and / or electrical connections or used together with other functional, physical, and / or electrical connections.

[0051] An element referred to with the definite article or demonstrative pronoun can be construed as one element or a plurality of elements even if it has a singular form.

[0052] Unless explicitly described in terms of order or explicitly described to form a contrast, the operations of the method can be performed in an appropriate order. In addition, examples or exemplary terms (e.g., "such as" and "etc.") are used for descriptive purposes and are intended to limit the scope of the inventive concept unless otherwise defined by the claims.

[0053] Figure 1 is a perspective view showing a schematic configuration of a light source apparatus 100 according to the embodiment. Figure 2 It shows Figure 1 1 is a plan view of an arrangement of a plurality of light emitting elements included in a light source apparatus 100 shown in FIG.

[0054] The light source device 100 may include a light source array 140 formed on a substrate and emitting light of multiple wavelengths. The light source array 140 may include a plurality of first light emitting elements 142 and a plurality of second light emitting elements 148. The first light emitting element 142 and the second light emitting element 148 may be configured to emit light of different wavelengths. The first light emitting element 142 and the second light emitting element 148 may be configured to emit light of different polarizations. The substrate may include a semiconductor substrate 110 and a reflective layer 120 containing a semiconductor-based material. The reflective layer 120 may be a distributed Bragg reflector including a plurality of layers alternately stacked and having different refractive indices. The reflective layer 120 may operate as a lower reflector common to the first light emitting element 142 and the second light emitting element 148. However, this is only an example, and the first light emitting element 142 and the second light emitting element 148 may be provided with separate reflective layers. The lower electrode 180 may be provided on the lower surface of the semiconductor substrate 110. The lower electrode 180 may be an electrode that injects current into the first and second light emitting elements 142 and 148 together with an upper electrode provided in each of the first and second light emitting elements 142 and 148. However, the position of the lower electrode 180 is not limited thereto and may vary.

[0055] The light source device 100 may have a structure in which the first light emitting element 142 and the second light emitting element 148 emitting light of different wavelengths are integrally formed on the same substrate. The term "integrally" means that the first light emitting element 142 and the second light emitting element 148 are manufactured according to a series of processes performed continuously on the same substrate. That is, instead of being manufactured in a separate process and then transferred or bonded, various material layers are stacked by using a method such as vapor deposition, and various material layers are manufactured according to a series of processes such as a photolithography process for forming a pattern (including exposure, development, and etching). Reference will be made later Figures 3A to 6 A detailed structure of each of the first light emitting element 142 and the second light emitting element 148 is described.

[0056] The light source device 100 may have a configuration that can selectively emit light of different wavelengths. The first light emitting elements 142 may be arranged to form a plurality of rows of a first light emitting array 140_1, the plurality of rows being parallel to each other and spaced apart from each other. The second light emitting elements 148 may be arranged to form a plurality of rows of a second light emitting array 140_2, the plurality of rows being parallel to each other and spaced apart from each other. The plurality of rows of the first light emitting array 140_1 may alternate with the plurality of rows of the second light emitting array 140_2.

[0057] The first light emitting array 140_1 and the second light emitting array 140_2 may be controlled independently of each other. The first light emitting array 140_1 may be driven by a control signal P1. The second light emitting array 140_2 may be driven by a control signal P2. Only the first light emitting array 140_1 may emit light and the second light emitting array 140_2 may not emit light, or only the second light emitting array 140_2 may emit light and the first light emitting array 140_1 may not emit light.

[0058] When the first light emitting array 140_1 and the second light emitting array 140_2 are controlled independently of each other, all the first light emitting elements 142 of the first light emitting array 140_1 may not be driven at the same time, or all the second light emitting elements 148 of the second light emitting array 140_2 may not be driven at the same time. When the first light emitting array 140_1 is driven, the first light emitting elements 142 may be driven sequentially so that the columns of the first light emitting elements 142 emit light in a scanning manner. The first light emitting elements 142 may be driven sequentially in other ways. When the second light emitting array 140_2 is driven, the second light emitting elements 148 may be driven sequentially so that the columns of the second light emitting elements 148 emit light in a scanning manner. The second light emitting elements 148 may be driven sequentially in other ways.

[0059] The arrangement of the first light emitting element 142 and the second light emitting element 148 is not limited to the above arrangement. For example, the arrangement may have a random distribution. The first light emitting array 140_1 and the second light emitting array 140_2 may be controlled independently of each other, and when driving any one of the first light emitting array 140_1 and the second light emitting array 140_2, various arrangements may be adopted to make the distribution of the emitted light substantially uniform in space.

[0060] Figure 3A and Figure 3B They are shown in Figure 1 1 and 2 are perspective views and cross-sectional views of a first light emitting element 142 provided in a light source device 100. Figure 4 Shown in Figure 1 FIG. 1 is an exemplary structure of a first nanostructure reflective layer provided in the first light emitting element 142 of the light source device 100 .

[0061] The first light emitting element 142 may have a configuration similar to a vertical cavity surface emitting laser (VCSEL). A specific structure of the first light emitting element 142 will now be described.

[0062] The first light emitting element 142 may include a first reflective layer 20, a second light emitting layer 30 configured to generate light of a second wavelength, a first etch stop layer 40, a first light emitting layer 50 configured to emit light of a first wavelength, the first wavelength being different from the second wavelength, and a first nanostructure reflective layer 90. The second light emitting layer 30, the first etch stop layer 40, the first light emitting layer 50, and the first nanostructure reflective layer 90 may be sequentially arranged from the bottom.

[0063] The second light-emitting layer 30 can absorb energy and generate light. For example, when current is injected into the second light-emitting layer 30 or pump light is projected onto the second light-emitting layer 30, the second light-emitting layer 30 can generate light. The second light-emitting layer 30 can include a second active layer 34 containing a semiconductor material. For example, the second active layer 34 can include a III-V semiconductor material or a II-VI semiconductor material. The second active layer 34 can have a multi-quantum well structure containing InGaAs, AlGaAs, AlGaN, InGaAsP, InGaP, AlGaInP, etc. The second active layer 34 can include quantum dots. The materials that can be included in the second active layer 34 are not limited to the listed materials. The second active layer 34 can have a material and structure for emitting light of a second wavelength.

[0064] The second light emitting layer 30 may further include a second upper cladding layer 36 and a second lower cladding layer 32, respectively disposed above and below the second active layer 34. Each of the second upper cladding layer 36 and the second lower cladding layer 32 may include an N-type, P-type, or intrinsic semiconductor material. The second upper cladding layer 36 and the second lower cladding layer 32 may include a semiconductor material that is the same as or different from the semiconductor material included in the second active layer 34, and may further include an N-type dopant and a P-type dopant, respectively.

[0065] The first light emitting layer 50 may be a layer that absorbs energy and generates light, and may be configured to emit light of a different wavelength from that of the second light emitting layer 30. The first light emitting layer 50 may include a first active layer 54 containing a semiconductor material. For example, similar to the second active layer 34, the first active layer 54 may include a III-V semiconductor material or a II-VI semiconductor material, and may have a multi-quantum well structure containing InGaAs, AlGaAs, AlGaN, InGaAsP, InGaP, AlGaInP, etc. The first active layer 54 may include quantum dots. The materials in the first active layer 54 are not limited to the listed materials. The first active layer 54 may have a material and structure for emitting light of a first wavelength, which is longer than the second wavelength emitted by the second active layer 34. For example, the first active layer 54 may have a material and structure that emits light in the infrared band. The band gap energy of the quantum well structure used in the first active layer 54 may be lower than the band gap energy of the quantum well structure used in the second active layer 34.

[0066] The first light emitting layer 50 may further include a first upper cladding layer 56 and a first lower cladding layer 52, respectively disposed above and below the first active layer 54. Each of the first upper cladding layer 56 and the first lower cladding layer 52 may include an N-type, P-type, or intrinsic semiconductor material. The first upper cladding layer 56 and the first lower cladding layer 52 may include a semiconductor material that is the same as or different from the semiconductor material included in the first active layer 54, and may further include an N-type dopant and a P-type dopant, respectively.

[0067] The first etch stop layer 40 may be disposed between the second light emitting layer 30 and the first light emitting layer 50. The first etch stop layer 40 may be provided according to the manufacturing convenience of manufacturing the first light emitting element 142 and the second light emitting element 148 formed on the same substrate as the first light emitting element 142. The first etch stop layer 40 may include a semiconductor material, and may include a material having an etching ratio different from that of the first light emitting layer 50 disposed above the first etch stop layer 40.

[0068] The first light emitting element 142 may include an oxide aperture layer 60. The oxide aperture layer 60 may adjust the mode or beam size of the oscillating light. The oxide aperture layer 60 is illustrated as being above the first light emitting layer 50. However, the position of the oxide aperture layer 60 is not limited thereto. For example, the oxide aperture layer 60 may be located inside the second reflective layer 21 in the lower portion of the second light emitting layer 30. Moreover, a plurality of oxide aperture layers 60 may be provided, or no oxide aperture layer 60 may be provided. A second electrode 80 for injecting current into the first light emitting layer 50 may be provided above the oxide aperture layer 60.

[0069] The first reflective layer 20 and the first nanostructure reflective layer 90, which are respectively formed on the lower portion of the second light emitting layer 30 and the upper portion of the first light emitting layer 50, may form a resonant cavity with respect to the light generated in the first light emitting layer 50. That is, the first reflective layer 20 and the first nanostructure reflective layer 90 may be provided to oscillate the light generated in the first active layer 54 and amplify and emit the light L of the first wavelength. λ1 To this end, the thickness from the first reflective layer 20 to the first nanostructure reflective layer 90 may be an integer multiple of the first wavelength λ1.

[0070] With the formation Figure 1Similar to the reflective layer 120 on the semiconductor substrate 110, the first reflective layer 20 may be a distributed Bragg reflector. That is, the first reflective layer 20 may have the following structure: a plurality of layers with different refractive indices are alternately stacked. The thickness of each of the plurality of layers with different refractive indices may be about 1 / 4 of the expected oscillation wavelength. The thickness may be an odd multiple of 1 / 4 of the oscillation wavelength (e.g., 3 / 4, 5 / 4, ...). Such a distributed Bragg reflector may set the reflectivity to a desired value by adjusting the refractive index difference of the two material layers and the number of times the pair is repeatedly stacked. The first reflective layer 20 may include the same material as the semiconductor material forming the first light emitting layer 50 and the second light emitting layer 30. For example, one of the two material layers may be Al x Ga (1-x) As (0≤x≤1) layer, and the other can be Al y Ga (1-y) As (0≤y≤1, x≠y). The first reflective layer 20 may be doped to have the same semiconductor type as the semiconductor type of the second lower cladding layer 32 of the second light emitting layer 30. For example, when the second lower cladding layer 32 is a P type, the first reflective layer 20 may be doped with a P type, and when the second lower cladding layer 32 is an N type, the first reflective layer 20 may be doped with an N type. The material of the first reflective layer 20 is not limited thereto, and various materials capable of forming a refractive index difference may be used.

[0071] In a distributed Bragg reflector, the reflectivity increases as the number of stacked layers increases. Therefore, it can be determined that the reflective layer ( Figure 1 The total number of stacked layers of the reflective layer 120 ( ) and the first reflective layer 20 is such that, for example, a reflectivity of about 90% or more can be achieved. By adjusting the reflectivity, the direction of the emitted light can be adjusted. Figure 1 ) and the reflectivity of the first reflective layer 20 is about 98% or higher, light can be emitted through the upper first nanostructure reflective layer 90.

[0072] Instead of a distributed Bragg reflector structure having a relatively large thickness due to a large number of stacked layers, the first nanostructure reflective layer 90 can be used to achieve a desired reflectivity with a small thickness. Therefore, the thickness of the first light emitting element 142 can be reduced, and this can be beneficial to reducing the overall volume of the light source device 100.

[0073] The first nanostructure reflective layer 90 may include a plurality of nanostructures NS1 having a sub-wavelength shape and size. Figure 4As shown, the nanostructure NS1 may be disposed on the support layer 91. Sub-wavelength shape size means that the size defining the shape of the nanostructure NS1, such as thickness or width, is smaller than the wavelength of light emitted from the first light emitting element 142, i.e., the first wavelength λ1 as the wavelength of light generated in the first active layer 54.

[0074] The first nanostructure reflective layer 90 may include a semiconductor material. For example, the first nanostructure reflective layer 90 may be formed entirely of a III-V semiconductor compound. Moreover, the composition of the compound may be adjusted to set the refractive index of the support layer 91 to be less than the refractive index of the nanostructure NS1. The refractive index difference between the support layer 91 and the nanostructure NS1 may be about 0.5 or more, or may be about 1 or more.

[0075] The thickness of the support layer 91 may be set to be equal to or greater than 1 / 5 of the emission wavelength (i.e., the first wavelength λ1). When the thickness of the support layer 91 is less than 1 / 5 of the emission wavelength, light resonating at the nanostructure NS1 above the support layer 91 may be coupled to the lower layer having the semiconductor material, and thus may not be able to perform the intended operation as a metastructure.

[0076] The first light emitting element 142 may further include a heat sink (not shown) for dissipating heat generated in the first light emitting layer 50 and the second light emitting layer 30. The heat sink may include a metal material having good thermal conductivity, such as copper, gold, aluminum, etc., and may be formed in a shape surrounding the side surface of the first light emitting element 142.

[0077] When the lower electrode ( Figure 1 When the second electrode 80 disposed on the upper portion of the first light emitting layer 50 injects current into the first active layer 54 and the second active layer 34, light L of the first wavelength λ1 can be generated respectively. λ1 and light L having a second wavelength λ2 λ2 Since the light L of the first wavelength λ1 λ1 The resonance condition of the cavity is satisfied, so the light L of the first wavelength λ1 can be amplified λ1 , and due to the second wavelength λ2 light L λ2 is absorbed in the structure in the cavity, so the light L of the second wavelength λ2 may not be emitted λ2 According to the above process, the light L of the first wavelength λ1 can be emitted from the first light emitting element 142. λ1 .

[0078] Figure 5A and Figure 5B They are shown in Figure 1 Detailed perspective view and cross-sectional view of a second light emitting element 148 provided in the light source device 100. Figure 6 Shown in Figure 1 Detailed description of the invention relates to an exemplary structure of a second nanostructure reflective layer provided in a second light emitting element 148 of a light source device 100.

[0079] The second light emitting element 148 may include a second reflective layer 21, a third light emitting layer 31, and a second etch stop layer 41. The second reflective layer 21 may have the same material and thickness as the first reflective layer 20 of the first light emitting element 142. The third light emitting layer 31 may generate light L having a second wavelength λ2. λ2 , and has the same material and structure as the second light emitting layer 30 of the first light emitting element 142. That is, the third light emitting layer 31 may include a third lower cladding layer 33, a third active layer 35, and a third upper cladding layer 37. The third lower cladding layer 33, the third active layer 35, and the third upper cladding layer 37 may have the same material and thickness as the second lower cladding layer 32, the second active layer 34, and the second upper cladding layer 36, respectively. The third active layer 35 may generate light L having a second wavelength λ2 λ2 , the second wavelength λ2 is greater than the light L emitted from the first light emitting element 142 λ1 The first wavelength λ1 of the third active layer 35 is shorter and has a wavelength difference of about 50 nm or more. For example, the third active layer 35 may generate light in a visible light band.

[0080] The second etch stop layer 41 may have the same material and thickness as the first etch stop layer 40 of the first light emitting element 142 .

[0081] The oxide pore layer 61 may be disposed on the second etch stop layer 41. The second nanostructure reflective layer 95 and the second electrode 85 may be disposed on the oxide pore layer 61.

[0082] The second reflective layer 21 and the second nanostructure reflective layer 95 may form a resonant cavity with respect to the light generated in the third active layer 35. That is, the second reflective layer 21 and the second nanostructure reflective layer 95 may be provided to oscillate the light generated in the third active layer 35 and amplify and emit the light L of the second wavelength λ2. λ2 To this end, the thickness from the second reflective layer 21 to the second nanostructure reflective layer 95 may be an integer n times the second wavelength λ2. The integer n may be smaller than the integer m used to set the cavity length of the first light emitting element 142.

[0083] The second nanostructure reflective layer 95 may include a plurality of nanostructures NS2 having a sub-wavelength shape size. The sub-wavelength shape size means that the size defining the shape of the nanostructure NS2, such as thickness or width, is smaller than the wavelength of light emitted from the second light emitting element 148, that is, the second wavelength λ2 which is the wavelength of light generated in the third active layer 35. Figure 6 As shown, the nanostructure NS2 may be disposed on the support layer 92 .

[0084] The second nanostructure reflective layer 95 may include a semiconductor material. For example, the second nanostructure reflective layer 95 may be formed entirely of a III-V semiconductor compound. Moreover, the composition of the compound may be adjusted to set the refractive index of the support layer 92 to the refractive index of the nanostructure NS2. The refractive index difference between the support layer 92 and the nanostructure NS2 may be about 0.5 or more, or may be about 1 or more.

[0085] The thickness of the support layer 92 may be set to be equal to or greater than 1 / 5 of the emission wavelength (ie, the second wavelength λ2).

[0086] Light L of the second wavelength λ2 may be emitted from the second light emitting element 148. λ2 .

[0087] As described above, the first light emitting element 142 emits the light L of the first wavelength λ1. λ1 The second light emitting element 148 emits light L of the second wavelength λ2 λ2 Detailed configuration.

[0088] At the same time, the light L of the first wavelength λ1 emitted from the first light emitting element 142 λ1 and the light L of the second wavelength λ2 emitted from the second light emitting element 148 λ2 It is possible to have different polarizations. The relevant configuration will be described below.

[0089] The specific shape of the second electrode 80 of the first light emitting element 142 and the specific shape of the second electrode 85 of the second light emitting element 148 can be adjusted to control the polarization of the emitted light. That is, the path of injecting current into the first active layer 54 and the third active layer 35 can be changed according to the shapes of the second electrodes 80 and 85, and the polarization of the emitted light can be different. For example, the shape of the second electrode 80 of the first light emitting element 142 and the shape of the second electrode 85 of the second light emitting element 148 can be different from each other so that the light L having the first wavelength λ1 emitted from the first light emitting element 142 is λ1 The polarization of the light L of the second wavelength λ2 emitted from the second light emitting element 148 λ2 The polarizations can be different from each other.

[0090] Alternatively, an asymmetric current injection method can be used to adjust the polarization of the emitted light. The polarization of the emitted light can be adjusted by adjusting the direction of the injected current or by adjusting the amount of injected current according to the direction. In this case, the shape of the second electrode 80 of the first light-emitting element 142 and the shape of the second electrode 85 of the second light-emitting element 148 can be the same.

[0091] Alternatively, the polarization of the emitted light may be adjusted by making the cross-sectional shape of the first light emitting element 142 and the cross-sectional shape of the second light emitting element 148 asymmetric and adjusting the long length direction. Figure 3A and Figure 5A In the perspective view of FIG. 1 , the first light emitting element 142 and the second light emitting element 148 have a cylindrical shape, however, alternatively, the first light emitting element 142 and the second light emitting element 148 may have a rectangular column shape having different lengths in the horizontal direction and the vertical direction. In this regard, the first light emitting element 142 and the second light emitting element 148 have different long length directions, so that the light L of the first wavelength λ1 emitted from the first light emitting element 142 λ1 The polarization of the light L of the second wavelength λ2 emitted from the second light emitting element 148 λ2 The polarizations can be different from each other.

[0092] Alternatively, the polarization of the emitted light may also be adjusted by setting a grating-based configuration as an element that adjusts the polarization direction in a path along which light is emitted from each of the first light emitting element 142 and the second light emitting element 148. Different grating elements may be respectively set in the two paths to emit light with different polarizations, so that the light L of the first wavelength λ1 emitted from the first light emitting element 142 is λ1 The polarization of the light L of the second wavelength λ2 emitted from the second light emitting element 148 λ2 The polarizations can be different from each other.

[0093] Figure 7 It shows Figure 1 Detailed enlarged cross-sectional view of a portion of the light source apparatus 100 .

[0094] The first light emitting element 142 and the second light emitting element 148 included in the light source device 100 may share the lower electrode 180, the semiconductor substrate 110, and the reflective layer 120. Moreover, the first reflective layer 20, the second light emitting layer 30, and the first etch stop layer 40 of the first light emitting element 142 may have the same material and structure as the second reflective layer 21, the third light emitting layer 31, and the second etch stop layer 41 of the second light emitting element 148, respectively. Therefore, the first light emitting element 142 and the second light emitting element 148 may share many processes for forming the first light emitting element 142 and the second light emitting element 148. For example, when the material layers constituting the reflective layer 120 and the first light emitting element 142 are stacked on the semiconductor substrate 110 and then the pattern of the second light emitting element 148 is formed, the material layers that are not needed by the second light emitting element 148 may be removed by using the second etch stop layer 41. As described above, the process of forming the second light emitting element 148 may mainly utilize the process of forming the first light emitting element 142, which is easy to manufacture.

[0095] Fig. 8A and Figure 8B 2 is a perspective view of the multifunctional projector 200 according to the embodiment, and shows that the first modulated light ML1 is formed according to the light of the first light emitting element 142 and the second modulated light ML2 is formed according to the light of the second light emitting element 148 , respectively.

[0096] The multifunctional projector 200 may include a light source device 100 , a controller 250 , and a nanostructure light modulation layer 230 .

[0097] The light source device 100 may include a light source array 140 that emits light having a plurality of wavelengths. The light source array 140 includes a light source array 140 that emits light L having a first wavelength λ1. λ1 The first light emitting element 142 emits light L of the second wavelength λ2 λ2 The first light emitting elements 142 may be repeatedly arranged along rows spaced apart from each other to form a first light emitting array 1401. The second light emitting elements 148 may be repeatedly arranged along rows alternating with the rows to form a second light emitting array 140_2.

[0098] The controller 250 may control the light source device 100 so as to selectively drive the first light emitting element 142 or the second light emitting element 148. Fig. 8A As shown, when only the first light emitting element 142 is driven to emit light and the second light emitting element 148 is controlled to be turned off and not emit light, the light source device 100 can emit light L of the first wavelength λ1. λ1 .like Figure 8B As shown, when only the second light emitting element 148 is driven to emit light and the first light emitting element 142 is controlled to be turned off and not emit light, the light source device 100 can emit the light L of the second wavelength λ2. λ2 .

[0099] The nanostructure light modulation layer 230 may be a layer disposed in a path of light emitted from the light source device 100 and modulating the light. The nanostructure light modulation layer 230 may include a plurality of nanostructures NS3 having a sub-wavelength shape size smaller than the wavelength of light emitted from the light source device 100.

[0100] The nanostructure light modulation layer 230 may include a plurality of nanostructures NS3. The nanostructures NS3 have sub-wavelength shape dimensions. In this document, shape dimensions refer to dimensions that define the shape of the nanostructure NS3, such as thickness and width, and sub-wavelength shape dimensions mean that at least one of these shape dimensions is smaller than the wavelength of light emitted from the light source device 100. The light source device 100 may emit light Lλ of a first wavelength λ1. 1 Or emit light L of the second wavelength λ2 λ2, wherein the second wavelength λ2 is shorter than the first wavelength λ1. The nanostructure NS3 may have a sub-wavelength shape size relative to the second wavelength λ2.

[0101] The shape size of the nanostructure NS3 may be equal to or less than half of the second wavelength λ2. The arrangement pitch of the nanostructure NS3 may be equal to or less than half of the second wavelength λ2. When the width of the nanostructure NS3 is equal to or less than half of the wavelength of the incident light, the nanostructure NS3 may operate as a strong scattering unit forming a metastructure. As the arrangement pitch of the nanostructure NS3 becomes smaller than the wavelength of the incident light, the incident light may be controlled to have a desired shape without high-order diffraction.

[0102] Each nanostructure NS3 may have a unique transmission intensity and transmission phase according to its material and shape. The phase or intensity distribution of light passing through the nanostructure light modulation layer 230 may be controlled by adjusting the shape distribution of the nanostructure NS3. The shape distribution refers to at least any one of the shape, size, size distribution, arrangement spacing, and arrangement spacing distribution of the nanostructure NS3.

[0103] The shape distribution of the nanostructure NS3 may be determined so that different transmission phase distributions may be formed according to the polarization of the light emitted from the light source device 100. Therefore, the nanostructure light modulation layer 230 may transmit the light L of the first wavelength λ1 emitted from the first light emitting element 142 to the nanostructure light modulating layer 230. λ1 The light L of the second wavelength λ2 is modulated into the first modulated light ML1 and emitted from the second light emitting element 148. λ2 Modulated into the second modulated light ML2.

[0104] Alternatively, when the light L of the first wavelength λ1 emitted from the light source device 100 λ1 and the light L of the second wavelength λ2 λ2 When the nanostructure NS3 has the first polarization and the second polarization, the shape distribution can be determined so that the light L of the first wavelength λ1 emitted from the first light emitting element 142 in the first polarization state can be λ1 The light L having the second wavelength λ2 emitted from the first light emitting element 148 and in the second polarization state can be modulated into structured light. λ2 In other words, the first modulated light ML1 may be structured light, and the second modulated light ML2 may be uniform light.

[0105] Structured light refers to the distribution of beam points formed by light propagating in space. The structured light generated when passing through the nanostructure light modulation layer 230 can have a mathematically encoded pattern to uniquely specify the angular position coordinates through bright and dark spots. The pattern can be used to identify three-dimensional shapes. The structured light projected on a three-dimensional object can be changed in shape by the three-dimensional object, and this change can be imaged using an imaging device such as a camera, thereby extracting the depth information of the three-dimensional object according to the coordinates by tracking the degree of change in the pattern shape.

[0106] The uniform light may be a general illumination light without the pattern that the structured light has according to the position. The light emitted from the light source device 100 may be adjusted in beam width and uniformized in spatial distribution when passing through the nanostructure light modulation layer 230. For example, the uniform light may have an illumination for obtaining a two-dimensional image, or may be used as a general illumination light.

[0107] Although all nanostructures NS3 are shown to have a cylindrical form having the same shape, size and height, this is an example. That is, nanostructure NS3 is not limited thereto. For example, the horizontal or vertical size or material of the nanostructure NS can be adjusted according to the position of the nanostructure NS3 to obtain a desired transmission intensity distribution or transmission phase distribution. In order to obtain a desired transmission intensity distribution or transmission phase distribution, a shape distribution of a group of multiple nanostructures NS3 can be determined according to the position of the nanostructure NS3. Moreover, such a nanostructure NS3 group can be repeatedly arranged according to a predetermined period. The shape distribution of the nanostructure NS3 can be regular, periodic or quasi-periodic. However, the shape distribution of the nanostructure NS3 is not limited thereto. For example, the shape distribution of the nanostructure NS3 can be random.

[0108] The nanostructure light modulation layer 230 may further include a support layer SU supporting the nanostructure NS3. The support layer SU may include a material with a refractive index smaller than that of the nanostructure NS3. For example, the support layer SU may include SiO 2 , transparent conductive oxides (TCO) or polymers such as polycarbonate (PC), polystyrene (PS) or polymethyl methacrylate (PMMA).

[0109] The nanostructure NS3 may include a dielectric material. The nanostructure NS3 may include a material having a refractive index higher than that of an adjacent material (eg, air or a support layer SU). The difference between the refractive index of the nanostructure NS3 and the refractive index of the adjacent material may be 1 or more.

[0110] The nanostructure NS3 may include any one of the following: single crystal silicon, polycrystalline silicon (poly-Si), amorphous silicon, Si 3 N 4, GaP, TiO 2 , AlSb, AlAs, AlGaAs, AlGaInP, BP and ZnGeP 2 .

[0111] Alternatively, the nanostructure NS3 may include a conductive material. The conductive material may be a highly conductive metal material capable of surface plasma excitation. For example, the nanostructure may include at least one selected from the following: copper (Cu), aluminum (Al), nickel (Ni), iron (Fe), cobalt (Co), zinc (Zn), titanium (Ti), ruthenium (Ru), rhodium (Rh), palladium (Pd), platinum (Pt), silver (Ag), osmium (Os), iridium (Ir) and gold (Au), or the nanostructure NS3 may include an alloy containing any one of the listed elements. Moreover, the nanostructure NS3 may include a highly conductive two-dimensional material such as graphene, or may include a conductive oxide.

[0112] Alternatively, some nanostructures NS3 may include a dielectric material having a high refractive index, and some nanostructures NS3 may include a conductive material. That is, some nanostructures NS3 may include a dielectric material having a refractive index greater than that of the support layer SU, and other nanostructures NS3 may include a conductive material.

[0113] The nanostructure NS3 may have an asymmetric shape. When a nanostructure NS3 asymmetric in shape is used, the above optical operation may be performed on light polarized in a specific direction according to the asymmetry. In other words, the transmission phase distribution of light incident on each nanostructure NS3 may be changed so that structured light may be obtained from light having a first polarization state, and uniform light may be obtained from light having a second polarization state.

[0114] The cross-sectional shape of the nanostructure NS3 may have asymmetry. That is, the shape of the cross section of the nanostructure NS3 perpendicular to the direction (Z-axis direction) in which the light source device 100 and the nanostructure light modulation layer 230 are spaced apart from each other may have asymmetry. For example, when the first polarization and the second polarization of the light emitted from the first light-emitting element 142 and the second light-emitting element 148 are different from each other, the nanostructure NS3 may have different lengths in the two polarization directions. The degree of difference between the two polarization directions may vary according to the position of each nanostructure NS3. For example, the arrangement and distribution of the nanostructure NS3 may be determined by the following operations: adjusting the directional length of the first polarization of the light emitted from the first light-emitting element 142 to form a predetermined expected structured light using light with the first polarization; and similarly adjusting the length distribution of the second polarization of the nanostructure NS3 to provide uniform illumination by mixing the light with the second polarization emitted from the second light-emitting element 148. For example, the nanostructure NS3 may be designed to have a phase grating effect so that light with a first polarization direction may be diffracted at a periodic angle to form a structured light pattern. The nanostructure NS3 can be designed to have a phase distribution similar to that of an aspherical convex lens, so that light with a second polarization direction can form a uniform illumination light. By simulating the influence of the lengths in the two directions, the directional length of the first polarization of the nanostructure NS3 and the directional length of the second polarization of the nanostructure NS3 can be determined at each position.

[0115] Figures 9 to 11 It shows that it can be Fig. 8A and Figure 8B 2 is a perspective view of an example shape of a nanostructure NS3 included in the nanostructure light modulation layer 230.

[0116] refer to Fig. 9 , the nanostructure NS3 may have a polygonal column shape, having a cross-shaped cross section parallel to the XY plane and having a thickness (t). The cross-sectional shape may be an asymmetric shape, with the X-axis length Dx being different from the Y-axis length Dy. The ratio of the X-axis length Dx and the Y-axis length Dy of the cross shape may vary according to the position of the nanostructure NS3. Moreover, the distribution of the X-axis length Dx and the distribution of the Y-axis length Dy of the nanostructure NS3 may be different. For example, the distribution of the X-axis length Dx may be determined to form patterned light, and the distribution of the Y-axis length Dy may be determined to form uniform light. Such an asymmetric-shaped nanostructure NS3 may be appropriately arranged according to the position to produce different effects on light polarized in the X-axis direction and light polarized in the Y-axis direction.

[0117] refer to Fig.10The nanostructure NS3 may have an asymmetric elliptical column shape, and the cross section parallel to the XY plane is elliptical. The nanostructure NS3 may have an elliptical shape, and its major axis length D L Different from the minor axis length D S , and the major axis length D of the nanostructure NS3 is L With the minor axis length D S The ratio of can be changed according to the position of the nanostructure NS3 to produce different optical influences on light polarized in a direction parallel to the long axis and light polarized in a direction parallel to the short axis.

[0118] refer to Fig.11 , the nanostructure NS3 may have an asymmetric cuboid shape with a length D x And the width is D y Rectangular cross section. Figure 4 and Figure 6 As shown, the aspect ratio of the rectangular cross section can be adjusted according to the position to produce different optical effects on light polarized in the X-axis direction and light polarized in the Y-axis direction.

[0119] Fig.12 is a block diagram schematically showing an electronic device 300 according to an embodiment.

[0120] The electronic device 300 may include: a multifunctional projector 310 configured to emit light onto an object OBJ; a sensor 330 configured to receive light reflected from the object OBJ; and a processor 320 configured to perform calculations to obtain information related to the shape of the object OBJ from the light received by the sensor 330.

[0121] The multifunctional projector 310 may include: a light source array emitting light having multiple wavelengths; and a nanostructure light modulation layer having different modulation functions relative to the light having multiple wavelengths, and selectively irradiating the first modulated light ML1 or the second modulated light ML2 onto the object OBJ. The first modulated light ML1 and the second modulated light ML2 may be structured light and uniform light, respectively. Fig. 8A and Figure 8B The multifunctional projector 200 is described as the multifunctional projector 310 .

[0122] The processor 320 may perform overall control on the electronic device 300. For example, the processor 320 may control the multifunctional projector 310 to illuminate the object OBJ with the first modulated light ML1 or the second modulated light ML2. Moreover, the processor 320 may control the operation of the sensor 330 and receive information about the light ML1r and ML2r received by the sensor 330, and perform calculations using the received light ML1r and ML2r. The processor 320 may perform other calculations according to the wavelength of the light emitted from the multifunctional projector 310. For example, when the multifunctional projector 310 emits the first modulated light ML1, the processor 320 may perform calculations suitable for analyzing the light ML1r received by the sensor 330, and when the multifunctional projector 310 emits the second modulated light ML2, the processor 320 may perform calculations suitable for analyzing the light ML2r received by the sensor 330. For example, when the first modulated light ML1 is structured light, the processor 320 may perform calculations for obtaining a three-dimensional shape of the object OBJ, and when the second modulated light ML2 is uniform light, the processor 320 may perform calculations for obtaining a two-dimensional shape of the object OBJ.

[0123] The electronic device 300 may include a memory 350. A first optical computing module 352 and a second optical computing module 354 programmed to be executed on the processor 320 may be stored in the memory 350. The first optical computing module 352 and the second optical computing module 354 may be application programs related to the first modulated light ML1 and the second modulated light ML2, respectively.

[0124] The processor 320 may control the multifunctional projector 310 to emit the first modulated light ML1 by executing the first light calculation module 352 stored in the memory 350, and may analyze the light ML1r received by the sensor 330. For example, when the first modulated light ML1 is structured light, the processor 320 may analyze the pattern change of the structured light to analyze information related to the three-dimensional shape of the object OBJ.

[0125] The processor 320 may control the multifunction projector 310 to emit the second modulated light ML2 by executing the second light calculation module 354 stored in the memory 350, and may analyze the light ML2r received by the sensor 330. For example, when the second modulated light ML2 is uniform light, the processor 320 may analyze information related to the two-dimensional shape of the object OBJ.

[0126] Fig.13 is a block diagram schematically showing an electronic device 400 according to an embodiment.

[0127] The electronic device 400 may include: a multifunction projector 410 configured to emit light onto an object to perform user authentication; a sensor 430 configured to receive light reflected from the object; and a processor 420 configured to analyze the light incident on the sensor 430 to determine whether to authenticate the user.

[0128] You can use reference Fig. 8A and Figure 8B The multifunctional projector 200 described is used as a multifunctional projector 410. The multifunctional projector 410 may include: a light source array configured to emit light of multiple wavelengths; and a nanostructure light modulation layer having different modulation functions with respect to the light of the multiple wavelengths. The multifunctional projector 410 can selectively emit structured light or uniform light toward an object. The object onto which the light is emitted for user authentication may be the face of the user or the iris of the user's eye.

[0129] The processor 420 may control the multifunctional projector 410 according to a user input or an input according to execution of an application program included in the electronic device 400 .

[0130] When the multifunction projector 410 emits structured light onto the object, the processor 420 may use a facial recognition method for authentication. When the multifunction projector 410 emits uniform light onto the object, the processor 420 may use an iris recognition method for authentication.

[0131] The electronic device 400 may include a memory 450. An iris recognition module 451, a facial recognition module 453, and an application module 455 programmed to be executed by the processor 420 may be stored in the memory 450. In addition, data for executing the iris recognition module 451, the facial recognition module 453, and the application module 455 may be stored in the memory 450.

[0132] The processor 420 may execute the facial recognition module 453 in response to a signal input by the user or a signal input by the application module 455. The processor 420 may then control the multifunctional projector 410 accordingly to emit structured light, and may recognize the user's face by analyzing the light incident on the sensor 430 through a three-dimensional analysis method. The analyzed facial data may be compared with facial data previously stored in the memory 450 to determine whether to authenticate the user.

[0133] The processor 420 may execute the iris recognition module 451 in response to a signal input by the user or a signal input by the application module 455. The processor 420 may then control the multifunctional projector 410 accordingly to emit uniform light, and may analyze the light incident on the sensor 430 to recognize the iris of the user's eye. The analyzed iris data may be compared with the iris data previously stored in the memory 450 to determine whether to authenticate the user.

[0134] In addition, the memory 450 may also store modules such as a communication module, a camera module, a video playback module, or an audio playback module as a program for operating devices included in the electronic device 400 .

[0135] The memory 450 may include at least one type of recording medium selected from the following: a flash memory, a hard disk, a micro multimedia card, a memory card (e.g., a secure digital (SD) card or an extreme digital (XD) card), a random access memory (RAM), a static random access memory (SRAM), a read-only memory (ROM), an electrically erasable programmable read-only memory (EEPROM), a programmable read-only memory (PROM), a magnetic memory, a magnetic disk, or an optical disk.

[0136] Furthermore, the electronic device 400 may further include a communicator 470 and a user interface 480 .

[0137] The communicator 470 may communicate with an external device by, for example, Bluetooth communication, Bluetooth low energy (BLE) communication, near field communication, wireless local area network (WLAN) communication, ZigBee communication, infrared data association (IrDA) communication, Wi-Fi direct (WFD) communication, ultra-wideband (UWB) communication, Ant+ communication, or Wi-Fi communication. However, the communicator 470 is not limited thereto.

[0138] The user interface 480 may include a display panel, a keypad, a touch panel, or buttons.

[0139] In an embodiment, the electronic device 400 may be a portable mobile communication device, a smart phone, a smart watch, a personal digital assistant (PDA), a laptop computer, a personal computer (PC), a smart refrigerator, a mobile computing device, or a non-mobile computing device. However, the electronic device 400 is not limited thereto.

[0140] In the above embodiment, the method embodied as a software module or algorithm in the electronic device 400 can be stored on a computer-readable recording medium as a non-transitory computer-readable code or program command executable by the processor 420. Examples of computer-readable recording media include, but are not limited to: magnetic storage media (e.g., ROM, RAM, floppy disk, hard disk, etc.), optical recording media (e.g., CD-ROM or DVD), etc. The computer-readable recording medium can also be distributed on a networked computer system so that the computer-readable code can be stored and executed in a distributed manner. The medium can be read by a computer, stored in a memory, and executed by a processor.

[0141] As described above, according to one or more of the above embodiments, the multi-wavelength light source device can selectively emit light of different wavelength bands.

[0142] The multi-wavelength light source device can be integrally formed on one substrate, which is easy to manufacture.

[0143] The multi-wavelength light source device can be used to realize a multifunctional projector with a nanostructured light modulation layer, and can be used in electronic devices for various applications.

[0144] It should be understood that the exemplary embodiments described herein should be considered in a descriptive sense only and not for purposes of limitation. Descriptions of features or aspects in each embodiment should generally be considered as applicable to other similar features or aspects in other embodiments.

[0145] Although a multifunctional projector and an electronic device including the same have been described according to embodiments with reference to the accompanying drawings, it will be understood by those skilled in the art that various changes in form and details may be made without departing from the spirit and scope defined in the claims.

Claims

1. A light source device, comprising: substrate; as well as a light source array, disposed on the substrate, the light source array comprising a plurality of first light emitting elements and a plurality of second light emitting elements, the plurality of second light emitting elements being spaced apart from the plurality of first light emitting elements, Each of the plurality of first light emitting elements comprises: a first reflective layer, a second light emitting layer configured to emit light of a second wavelength, a first etch stop layer, the first light emitting layer configured to emit light of a first wavelength, and a first nanostructure reflective layer, wherein the first wavelength is different from the second wavelength, the first reflective layer and the first nanostructure reflective layer form a resonant cavity with respect to the light of the first wavelength emitted by the first light emitting layer, and Each of the plurality of second light emitting elements comprises: a second reflective layer having the same material and thickness as the first reflective layer, a third light-emitting layer having the same material and structure as the second light-emitting layer and configured to emit light of the second wavelength, a second etch-stop layer having the same material and thickness as the first etch-stop layer, and a second nanostructure reflective layer, wherein the second reflective layer and the second nanostructure reflective layer form a resonant cavity with respect to the light of the second wavelength emitted by the third light-emitting layer.

2. The light source device according to claim 1, wherein: The light source device has an integral structure.

3. The light source device according to claim 1, wherein: The first wavelength is greater than the second wavelength.

4. The light source device according to claim 1, wherein: Each of the first light emitting layer and the second light emitting layer has a quantum well structure, and The band gap energy of the quantum well structure of the first light-emitting layer is smaller than the band gap energy of the quantum well structure of the second light-emitting layer.

5. The light source device according to claim 1, wherein: A distance between the first reflective layer and the first nanostructure reflective layer is set so that the first light emitting element is configured to emit light of the first wavelength.

6. The light source device according to claim 1, wherein: A distance between the first reflective layer and the first nanostructure reflective layer is a first integer multiple of the first wavelength.

7. The light source device according to claim 6, wherein: A distance between the second reflective layer and the second nanostructure reflective layer is a second integer multiple of the second wavelength.

8. The light source device according to claim 7, wherein: The first integer is greater than the second integer.

9. The light source device according to claim 1, wherein: A difference between the first wavelength and the second wavelength is 50 nm or more.

10. The light source device according to claim 1, in, The first wavelength is in the infrared band, and Wherein, the second wavelength is in the visible light band.

11. The light source device according to claim 1, wherein: The first light emitting element and the second light emitting element emit light of different polarizations.

12. The light source device according to claim 1, wherein: The first nanostructure reflective layer includes a plurality of first nanostructures having sub-wavelength shape dimensions relative to light of the first wavelength.

13. The light source device according to claim 1, wherein: The second nanostructure reflective layer includes a plurality of second nanostructures having sub-wavelength shape dimensions relative to light of the second wavelength.

14. The light source device according to claim 1, in, The first light emitting elements are arranged along a plurality of rows that are spaced apart from and parallel to each other, and Wherein, the second light emitting elements are arranged along a plurality of rows alternating with the plurality of rows.

15. A multifunctional projector, comprising: The light source device according to claim 1; a controller configured to control the light source device so as to selectively drive the first light emitting element or the second light emitting element; as well as The nanostructure light modulation layer is arranged on the optical path of the light emitted from the light source device, includes a plurality of nanostructures, and is configured to modulate the light emitted from the light source device, wherein the plurality of nanostructures have a sub-wavelength shape size smaller than the wavelength of the light emitted from the light source device.

16. The multifunctional projector according to claim 15, wherein: The nanostructure light modulation layer is configured to modulate light emitted from the first light emitting element differently from light emitted from the second light emitting element.

17. The multifunctional projector according to claim 15, wherein: The first light emitting element and the second light emitting element are configured to emit light of different polarizations.

18. The multifunctional projector according to claim 17, wherein: The nanostructure light modulation layer is configured to modulate the light emitted from the first light emitting element into a predetermined structured light, and to modulate the light emitted from the second light emitting element into a uniform light.

19. The multifunctional projector according to claim 17, wherein: The plurality of nanostructures of the nanostructure light modulation layer have an asymmetric cross-sectional shape.

20. An electronic device, comprising: The multifunctional projector according to claim 15, wherein the multifunctional projector is configured to irradiate light onto an object; a sensor configured to receive light reflected from the object; and A processor is configured to perform calculations to obtain shape information of the object from light received by the sensor.

21. The electronic device according to claim 20, wherein: The processor is configured to perform different calculations depending on the wavelength of light emitted from the multifunction projector.

22. The electronic device according to claim 20, wherein: The multifunctional projector is configured to form structured light according to the light emitted from the first light emitting element, and to form uniform light according to the light emitted from the second light emitting element.

23. The electronic device according to claim 22, wherein: The processor is configured to perform user authentication using a facial recognition method when the multifunctional projector emits the structured light onto the object, and to perform user authentication using an iris recognition method when the multifunctional projector emits the uniform light onto the object.

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