A high-precision dual-mass silicon microgyroscope device based on tunneling magnetoresistance effect

Abstract

This invention discloses a high-precision dual-mass silicon micro-gyroscope device based on the tunneling magnetoresistive effect. The device comprises two layers: an upper layer is a silicon sensing structure, and a lower layer is a glass substrate structure with metal electrodes and a tunneling magnetoresistive detection module. The upper structure is bonded to the lower structure via anchor points. The upper structure consists of two identical gyroscope substructures, a pair of support beams, and a pair of anchor points. The lower structure consists of a tunneling magnetoresistive detection module, a glass substrate, driving electrodes, driving and detection electrodes, quadrature electrodes, a coil input interface, a coil input electrode, a coil output interface, a coil output electrode, a common electrode, and signal leads. This invention proposes a silicon micro-gyroscope using a miniature coil as the excitation mechanism, resulting in a stable magnetic field, controllable field strength, and high integration. Simultaneously, the use of a differential tunneling magnetoresistive detection structure provides advantages such as strong anti-common-mode error capability, high sensitivity, and high measurement accuracy.

Description

Technical Field

[0001] This invention relates to the field of measurement instrument technology for microelectromechanical systems (MEMS) and micro inertial navigation, specifically to a high-precision dual-mass silicon micro gyroscope device based on the tunneling magnetoresistance effect. Background Technology

[0002] Silicon micro gyroscopes possess excellent performance characteristics, including miniaturization and integration, high reliability, low power consumption, ease of digitization and intelligentization, and good dynamic performance. With continuous performance improvements, silicon micro gyroscopes have replaced some traditional gyroscopes and have found widespread application in consumer electronics, the automotive industry, and biomedicine. However, limited by the capacitance detection method, it is difficult to further improve the stability, sensitivity, and other important indicators of traditional silicon micro gyroscopes. Therefore, the application of silicon micro gyroscopes remains concentrated in the mid-range and low-end markets. Exploring new detection methods based on the traditional simple harmonic drive is an important direction for improving the performance of silicon micro gyroscopes.

[0003] The tunneling magnetoresistance (TMR) effect refers to the phenomenon in magnetic tunnel junctions (MJTs) composed of a ferromagnetic-insulator thin film-ferromagnetic material, where the magnitude of the tunneling magnetoresistance varies with the relative magnetization direction and intensity of the two ferromagnetic materials. The TMR effect is highly sensitive to changes in the magnetic field; even a small change in the surrounding environment can cause a significant change in the resistance of the MJT. Utilizing the TMR effect as a detection method in silicon micro-gyroscopes to significantly improve their sensitivity and enhance their detection accuracy has become a crucial direction for advancing the research and development of silicon micro-gyroscopes. Summary of the Invention

[0004] To address the insufficient accuracy of current silicon micro gyroscopes, this invention proposes a high-precision dual-mass silicon micro gyroscope device based on the tunneling magnetoresistive effect. The device consists of two layers: an upper silicon sensing structure and a lower glass substrate structure with metal electrodes and a tunneling magnetoresistive detection module.

[0005] The upper structure includes a first mass block module and a second mass block module arranged symmetrically to each other; a first drive comb tooth module and a second drive comb tooth module arranged symmetrically to each other; a first drive detection comb tooth module and a second drive detection comb tooth module arranged symmetrically to each other; and a first support beam module and a second support beam module arranged symmetrically to each other.

[0006] The first drive comb module is connected to the left side of the first mass block module, the first drive detection comb module is connected to the right side of the first mass block module, the second drive comb module is connected to the right side of the second mass block module, and the second drive detection comb module is connected to the left side of the second mass block module. The first support beam module and the second support beam module are located at the center of the front and rear sides of the upper structure, respectively, and are used to support and couple the first mass template and the second mass block module.

[0007] The lower structure includes a glass substrate, two pairs of tunneling magnetoresistive detection modules, several signal leads, and metal electrodes. The two pairs of tunneling magnetoresistive detection modules include a first tunneling magnetoresistive detection module and a third tunneling magnetoresistive detection module; a second tunneling magnetoresistive detection module and a fourth tunneling magnetoresistive detection module.

[0008] The first, second, third, and fourth tunnel magnetoresistive detection modules consist of the first, second, third, and fourth tunnel magnetoresistive sensors and the first, second, third, fourth, fifth, sixth, seventh, and eighth output electrodes.

[0009] The first, second, third, and fourth tunnel magnetoresistive sensors are all composed of six thin films: from top to bottom, they are the top layer, free layer, tunnel barrier layer, ferromagnetic layer, antiferromagnetic layer, and bottom layer.

[0010] The first and third tunnel magnetoresistive detection modules are located directly below the first mass block module. They detect and output the vibration displacement of the first mass block module caused by Coriolis acceleration by changing the two relative magnetization directions of its internal free layer and ferromagnetic layer.

[0011] The second and fourth tunnel magnetoresistive detection modules are located directly below the second mass block module and are used to detect and output the vibration displacement of the second mass block module caused by Coriolis acceleration.

[0012] The first and second drive comb modules, the first and second mass block modules, the first and second drive detection comb modules, the first and second tunnel magnetoresistive detection modules, and the third and fourth tunnel magnetoresistive detection modules are symmetrically distributed on both sides of the vertical line; the first drive comb module and the first drive detection comb module are located on the left and right sides of the first mass block module, respectively.

[0013] The second drive comb module and the second drive detection comb module are located on the right and left sides of the second mass block module, respectively.

[0014] The first and third tunnel magnetoresistive detection modules are located directly below the first mass block module, and the first and third tunnel magnetoresistive detection modules and the first mass block module are symmetrical about the line AB. The second and fourth tunnel magnetoresistive detection modules are located directly below the second mass block module, and the second and fourth tunnel magnetoresistive detection modules and the second mass block module are symmetrical about the line CD.

[0015] The first and second output electrodes are symmetrically distributed about the left and right sides of the first tunnel magnetoresistive sensor about the straight line AB; the third and fourth output electrodes are symmetrically distributed about the left and right sides of the second tunnel magnetoresistive sensor about the straight line CD; the fifth and sixth output electrodes are symmetrically distributed about the left and right sides of the third tunnel magnetoresistive sensor about the straight line AB; the seventh and eighth output electrodes are symmetrically distributed about the left and right sides of the fourth tunnel magnetoresistive sensor about the straight line CD; the first and second support beam modules are located at the center of the front and rear sides respectively, and are symmetrical about the perpendicular bisector.

[0016] A further improvement of the present invention is that: the first and second drive comb modules in the upper silicon sensitive structure are composed of first and second drive combs and first, second, third and fourth orthogonal combs;

[0017] The first mass block module consists of a first mass block, a first mass block outer frame, and a first excitation coil.

[0018] It consists of the first iron core, the first, second, third, and fourth anchor points, the first, second, third, and fourth swing suppression beams, the first, second, third, and fourth drive decoupling beams, and the first, second, third, and fourth detection connection beams;

[0019] The second mass block module consists of a second mass block, a second mass block outer frame, a second excitation coil, a second iron core, fifth, sixth, seventh, and eighth anchor points, fifth, sixth, seventh, and eighth swing suppression beams, fifth, sixth, seventh, and eighth drive decoupling beams, and fifth, sixth, seventh, and eighth detection connection beams.

[0020] The first drive detection comb module consists of a first drive detection comb and first and second orthogonal combs;

[0021] The second drive detection comb module consists of the first drive detection comb and the third and fourth orthogonal combs;

[0022] The first and second support beam modules consist of the first and second support beams and the seventh and eighth anchor points;

[0023] The first drive comb module, the first mass block module, and the first drive detection comb module constitute the first gyroscope substructure.

[0024] The second drive comb module, the second mass block module, and the second drive detection comb module constitute the second gyroscope substructure.

[0025] The upper silicon-sensitive structure is bonded to the lower glass substrate structure through anchor points one, two, three, four, five, six, seven, eight, nine, and ten.

[0026] The first and second support beams connect the first and second gyroscope substructures with the ninth and tenth anchor points, serving as support and coupling. The second drive comb teeth provide harmonic driving force to the second gyroscope substructure, and the second drive detection comb teeth detect the vibration of the outer frame of the second mass block, thereby realizing the closed-loop drive of the second gyroscope substructure.

[0027] A further improvement of the present invention is that the anti-phase vibration of the first and second mass blocks in the Y-axis detection direction will bring about the anti-phase vibration of the first and second excitation coils and the first and second iron cores, thereby generating an anti-phase changing dynamic magnetic field.

[0028] The first, second, third, and fourth oscillation suppression beams are used to suppress the vertical oscillation of the outer frame of the first mass block along the Z-axis, while the fifth, sixth, seventh, and eighth oscillation suppression beams are used to suppress the vertical oscillation of the outer frame of the second mass block along the Z-axis.

[0029] The first, second, third, and fourth orthogonal correction combs are used to provide orthogonal forces to the first gyroscope substructure, while the fifth, sixth, seventh, and eighth orthogonal correction combs are used to provide orthogonal forces to the second gyroscope substructure.

[0030] A further improvement of the present invention is that: the first and second support beam modules are located directly above and directly below the silicon sensitive structure, respectively; the left ends of the first and second support beams are connected to the midpoints of the upper and lower sides of the outer frame of the first mass block, respectively; the right ends are connected to the midpoints of the upper and lower sides of the outer frame of the second mass block, respectively; and the middle ends are fixed to the ninth and tenth anchor points, respectively. The ninth and tenth anchor points are located directly above and directly below the vertical axis of symmetry of the first and second gyroscope substructures, respectively.

[0031] The first drive comb module and the first drive detection comb module are located directly to the left and right of the first mass block module, respectively. The first drive comb is located at the midpoint of the left side of the outer frame of the first mass block, and the first drive detection comb is located at the midpoint of the right side of the outer frame of the first mass block. The second drive comb module and the second drive detection comb module are located directly to the left and right of the first mass block module, respectively. The second drive comb is located at the midpoint of the right side of the outer frame of the second mass block, and the second drive detection comb is located at the midpoint of the left side of the outer frame of the second mass block.

[0032] The first, second, third, and fourth orthogonal correction comb teeth are located at the upper left, lower left, lower right, and upper right of the outer frame of the first mass block, respectively; the fifth, sixth, seventh, and eighth orthogonal correction comb teeth are located at the upper right, lower right, lower left, and upper left of the outer frame of the second mass block, respectively; the first, second, third, and fourth oscillation suppression beams are located at the upper left, lower left, lower right, and upper right corners of the outer frame of the first mass block, respectively; the fifth, sixth, seventh, and eighth oscillation suppression beams are located at the upper right, lower right, lower left, and upper left corners of the outer frame of the second mass block, respectively.

[0033] The first and second mass blocks are located at the center of their respective outer frames; the first and fourth anchor points are located at the upper left and upper right of the first mass block, respectively; the second and third anchor points are located at the lower left and lower right of the first mass block, respectively; and the fifth and eighth anchor points are located at the upper right and upper left of the second mass block, respectively.

[0034] The sixth and seventh anchor points are located at the lower right and lower left of the second mass block, respectively; the first and second drive decoupling beams are located at the upper left and upper right of the first mass block, respectively, and are below the first and fourth anchor points; the third and fourth drive decoupling beams are located at the lower left and lower right of the first mass block, respectively, and are above the second and third anchor points; the fifth and sixth drive decoupling beams are located at the upper right and upper left of the first mass block, respectively; the seventh and eighth drive decoupling beams are located at the lower right and lower left of the first mass block, respectively, and are above the sixth and seventh anchor points; the first and second detection connecting beams are located at the upper left and lower left of the left side of the first mass block, respectively; the third and fourth detection connecting beams are located at the lower right and upper right of the right side of the first mass block, respectively; the fifth and sixth detection connecting beams are located at the upper right and lower right of the right side of the second mass block, respectively; and the seventh and eighth detection connecting beams are located at the lower left and upper left of the left side of the second mass block, respectively.

[0035] All decoupling beams and connecting beams are U-shaped beams; the first and second iron cores are both rectangular, with the first iron core located at the center of the first mass block and the second iron core located at the center of the second mass block; the first and second excitation coils are both encircled at right angles, with the first excitation coil located outside the first iron core and the second excitation coil located outside the second iron core.

[0036] A further improvement of the present invention is that: the front metal electrode of the lower glass substrate structure includes first and second driving electrodes, first and second driving detection electrodes, first, second, third, fourth, fifth, sixth, seventh, and eighth orthogonal electrodes, first and second coil input interfaces, first and second coil input electrodes, first and second coil output interfaces, first and second pairs of coil output electrodes, and first, second, third, and fourth common electrodes; the first and second driving electrodes are respectively connected to the first and second driving comb teeth, and are used to input simple harmonic driving signals to the first and second gyroscope substructures; the first and second driving detection electrodes are respectively connected to the first and second driving detection comb teeth, and are used to output driving detection signals to the first and second gyroscope substructures; the first, second, third, and fourth orthogonal electrodes are respectively connected to the first, second, third, and fourth orthogonal correction comb teeth. The fifth, sixth, seventh, and eighth orthogonal electrodes are connected to the fifth, sixth, seventh, and eighth orthogonal correction comb teeth, respectively, to input orthogonal correction signals to the second gyroscope substructure. The first and second excitation coil input electrodes are connected to the first and second excitation coil input interfaces, respectively, to provide input signals to the first and second excitation coils. The first and second coil output electrodes are connected to the first and second coil output interfaces, respectively, to output the output signals of the first and second excitation coils. The first and second common electrodes are connected to the first and second anchor points and the seventh and eighth anchor points, respectively, to input carrier signals to the first gyroscope substructure. The third and fourth common electrodes are connected to the fifth and sixth anchor points and the seventh and eighth anchor points, respectively, to input carrier signals to the second gyroscope substructure.

[0037] A further improvement of the present invention is that: the first driving electrode is located directly to the left of the first driving comb tooth, and the second driving electrode is located directly to the right of the second driving comb tooth; the first driving detection electrode is located above the left of the first driving detection comb tooth and above the right of the first mass block, and the second driving detection electrode is located below the right of the second driving detection comb tooth and below the left of the second mass block; the first and second orthogonal electrodes are located above the left and below the left of the first and second orthogonal correction comb teeth, respectively; the third and fourth orthogonal electrodes are located directly below and above the third and fourth orthogonal correction comb teeth, respectively; and the fifth and sixth orthogonal electrodes are located above the right of the fifth and sixth orthogonal correction comb teeth, respectively. The seventh and eighth orthogonal electrodes are located at the lower left and upper left of the seventh and eighth orthogonal correction comb teeth, respectively; the input interfaces of the first and second excitation coils are located directly above the first and second iron cores, respectively, and the output interfaces of the first and second excitation coils are located directly below the first and second iron cores, respectively; the input electrodes of the first and second excitation coils are located directly above the input interfaces of the first and second excitation coils, respectively, and the output electrodes of the first and second excitation coils are located directly below the output interfaces of the first and second excitation coils, respectively; the first and second common electrodes are located at the lower right and upper left of the second and fourth anchor points, respectively, and the third and fourth common electrodes are located at the lower left and upper right of the sixth and eighth anchor points, respectively.

[0038] A further improvement of the present invention is as follows: the first and third tunnel magnetoresistive detection modules arranged on the front side of the lower glass substrate structure are used to detect the magnetic field change caused by the vibration of the first mass block along the Y detection direction. When the first mass block vibrates along the Y detection direction, the magnetic field strength around the first and third tunnel magnetoresistive sensors changes in the opposite direction, so their output values ​​deviate from the initial values ​​in the opposite direction, thereby realizing differential detection; the symmetrically arranged second and fourth tunnel magnetoresistive detection modules are used to detect the magnetic field change caused by the vibration of the second mass block along the Y detection direction. When the second mass block vibrates along the Y detection direction, the magnetic field strength around the second and fourth tunnel magnetoresistive sensors changes in the opposite direction, so their output values ​​deviate from the initial values ​​in the opposite direction, thereby realizing differential detection; the first and second output electrodes and the first tunnel sensor are used to output the output value of the first tunnel sensor, the third and fourth output electrodes and the second tunnel sensor are used to output the output value of the second tunnel magnetoresistive sensor, the fifth and sixth output electrodes and the third tunnel sensor are used to output the output value of the third tunnel magnetoresistive sensor, and the seventh and eighth output electrodes are used to output the output value of the fourth tunnel magnetoresistive sensor.

[0039] A further improvement of the present invention is that: the first and third tunnel magnetoresistive sensors are rectangular and symmetrical about the horizontal midline, and both are located directly below the first mass block; the second and fourth tunnel magnetoresistive sensors are rectangular and symmetrical about the horizontal midline, and both are located directly below the second mass block; the first and second tunnel magnetoresistive sensors are symmetrical about the vertical midline, and the third and fourth tunnel magnetoresistive sensors are symmetrical about the vertical midline; the interiors of the first, second, third, and fourth tunnel magnetoresistive sensors are arranged in an "S" shape; the first and second output electrodes are rectangular, connected to the two output ports of the first tunnel magnetoresistive sensor, and symmetrically arranged left and right on the first... The third and fourth output electrodes on both sides of the tunnel magnetoresistive sensor are rectangular; the third and fourth output electrodes are connected to the two output ports of the second tunnel magnetoresistive sensor and are symmetrically arranged on both sides of the second tunnel magnetoresistive sensor. The fifth and sixth output electrodes are rectangular; the fifth and sixth output electrodes are connected to the two output ports of the third tunnel magnetoresistive sensor and are symmetrically arranged on both sides of the third tunnel magnetoresistive sensor. The seventh and eighth output electrodes are rectangular; the seventh and eighth output electrodes are connected to the two output ports of the fourth tunnel magnetoresistive sensor and are symmetrically arranged on both sides of the fourth tunnel magnetoresistive sensor.

[0040] Beneficial effects:

[0041] (1) The present invention integrates the excitation mechanism, namely the excitation coil and the iron core, on the gyroscope mass block. Compared with placing the permanent magnet on the surface of the mass block, the device volume is reduced and the integration is greatly improved. The magnetic field generated by the excitation coil and the iron core is stable, avoiding the problem of magnetic degradation of the permanent magnet. At the same time, the field strength is controllable and can be adjusted by the current of the excitation coil.

[0042] (2) The present invention uses a dual-mass tuning fork sensitive structure, with two gyroscope substructures vibrating at the same frequency in opposite directions to form a differential structure; at the same time, each gyroscope substructure is equipped with two tunnel magnetoresistive sensors arranged symmetrically in the upper and lower parts, which also constitutes a differential structure. The dual differential structure can effectively suppress common-mode errors caused by the external environment and improve the reliability of the device.

[0043] (3) The present invention drives the vibration of the excitation mechanism by the vibration of the mass block, thereby causing a change in the magnetic field strength around the tunnel magnetoresistive sensor. Thanks to the high sensitivity of the tunnel current to the change of the magnetic field, the tunnel magnetoresistive silicon micro gyroscope has higher sensitivity than the traditional capacitive detection silicon micro gyroscope. At the same time, the output signal of the tunnel magnetoresistive silicon micro gyroscope is easier to process, avoiding the problem of the output signal of the capacitive gyroscope being affected by factors such as parasitic capacitance, thus improving the accuracy of measurement. Attached Figure Description

[0044] Figure 1 This is an overall front sectional view of the present invention.

[0045] Figure 2 This is a top view of the upper structure of the present invention.

[0046] Figure 3 This is a schematic diagram of the lower electrode distribution of the present invention.

[0047] Figure 4 This is a schematic diagram of the lower tunnel magnetoresistive detection module of the present invention. Detailed Implementation

[0048] To further understand the present invention, the following explanation is provided in conjunction with the accompanying drawings.

[0049] like Figure 1 As shown, a high-precision dual-mass silicon microgyroscope device based on the tunneling magnetoresistive effect is presented. The device consists of two layers: the upper layer is a silicon sensing structure, and the lower layer is a glass substrate structure with metal electrodes and a tunneling magnetoresistive detection module.

[0050] The upper structure includes a first mass block module 1a and a second mass block module 1b arranged symmetrically; a first drive comb module 2a and a second drive comb module 2b arranged symmetrically; a first drive detection comb module 3a and a second drive detection comb module 3b arranged symmetrically; and a first support beam module 23a and a second support beam module 23b arranged symmetrically.

[0051] The first drive comb module 2a is connected to the left side of the first mass block module 1a, the first drive detection comb module 3a is connected to the right side of the first mass block module 1a, the second drive comb module 2b is connected to the right side of the second mass block module 1b, the second drive detection comb module 3b is connected to the left side of the second mass block module 1b, and the first support beam module 23a and the second support beam module 23b are located at the center of the front and rear sides of the upper structure, respectively, and are used to support and couple the first mass template 1a and the second mass block module 1b.

[0052] The lower structure includes a glass substrate 9, two pairs of tunnel magnetoresistive detection modules, several signal leads and metal electrodes, wherein the two pairs of tunnel magnetoresistive detection modules include a first tunnel magnetoresistive detection module 4a1 and a third tunnel magnetoresistive detection module 4a2; a second tunnel magnetoresistive detection module 4b1 and a fourth tunnel magnetoresistive detection module 4b2;

[0053] The first, second, third, and fourth tunnel magnetoresistive detection modules 4a1, 4b1, 4a2, and 4b2 are composed of the first, second, third, and fourth tunnel magnetoresistive sensors 5a1, 5b1, 5a2, and 5b2, and the first, second, third, fourth, fifth, sixth, seventh, and eighth output electrodes 6a1, 6a2, 6b1, 6b2, 6a3, 6a4, 6b3, and 6b4.

[0054] The first, second, third, and fourth tunnel magnetoresistive sensors 5a1, 5b1, 5a2, and 5b2 are all composed of six thin films: from top to bottom, they are top layer 7a, free layer 7b, tunnel barrier layer 7c, ferromagnetic layer 7d, antiferromagnetic layer 7e, and bottom layer 7f.

[0055] The first and third tunnel magnetoresistive detection modules 4a1 and 4a2 are located directly below the first mass block module 1a. They detect and output the vibration displacement of the first mass block module 1a caused by Coriolis acceleration by changing the relative magnetization directions 8a and 8b of the free layer 7b and the ferromagnetic layer 7d inside the module.

[0056] The second and fourth tunnel magnetoresistive detection modules 4b1 and 4b2 are located directly below the second mass block module 1b and are used to detect and output the vibration displacement of the first mass block module 1b caused by Coriolis acceleration.

[0057] The first and second drive comb modules 2a and 2b, the first and second mass block modules 1a and 1b, the first and second drive detection comb modules 3a and 3b, the first and second tunnel magnetoresistive detection modules 4a1 and 4b1, and the third and fourth tunnel magnetoresistive detection modules 4a2 and 4b2 are symmetrically distributed on both sides of the vertical axis; the first drive comb module 2a and the first drive detection comb module 3a are located on the left and right sides of the first mass block module 1a, respectively.

[0058] The second drive comb module 2b and the second drive detection comb module 3b are located on the right and left sides of the second mass block module 1b, respectively.

[0059] The first and third tunnel magnetoresistive detection modules 4a1 and 4a2 are located directly below the first mass block module 1a, and the first and third tunnel magnetoresistive detection modules 4a1 and 4a2 are symmetrical with the first mass block module 1a about the line AB. The second and fourth tunnel magnetoresistive detection modules 4b1 and 4b2 are located directly below the second mass block module 1b, and the second and fourth tunnel magnetoresistive detection modules 4b1 and 4b2 are symmetrical with the second mass block module 1b about the line CD.

[0060] The first and second output electrodes 6a1 and 6a2 are symmetrically distributed about the left and right sides of the first tunnel magnetoresistive sensor 5a1 about the straight line AB. The third and fourth output electrodes 6b1 and 6b2 are symmetrically distributed about the left and right sides of the second tunnel magnetoresistive sensor 5b1 about the straight line CD. The fifth and sixth output electrodes 6a3 and 6a4 are symmetrically distributed about the left and right sides of the third tunnel magnetoresistive sensor 5a2 about the straight line AB. The seventh and eighth output electrodes 6b3 and 6b4 are symmetrically distributed about the left and right sides of the fourth tunnel magnetoresistive sensor 5b2 about the straight line CD. The first and second support beam modules 23a and 23b are located at the center of the front and rear sides, respectively, and are symmetrical about the perpendicular bisector.

[0061] like Figure 2 As shown, the first and second drive comb modules 2a and 2b in the upper silicon sensitive structure are composed of the first and second drive combs 22a1 and 22b1 and the first, second, third and fourth orthogonal combs 11a1, 11a2, 11b1 and 11b2.

[0062] The first mass block module 1a consists of a first mass block 17a, a first mass block outer frame 12a, a first excitation coil 18a, a first iron core 19a, first, second, third, and fourth anchor points 13a1, 13a2, 13a3, and 13a4; first, second, third, and fourth swing suppression beams 16a1, 16a2, 16a3, and 16a4; first, second, third, and fourth drive decoupling beams 14a1, 14a2, 14a3, and 14a4; and first, second, third, and fourth detection connection beams 15a1, 15a2, 15a3, and 15a4.

[0063] The second mass block module 1b consists of a second mass block 17b, a second mass block outer frame 12b, a second excitation coil 18b, a second iron core 19b, fifth, sixth, seventh, and eighth anchor points 13b1, 13b2, 13b3, and 13b4, fifth, sixth, seventh, and eighth sway suppression beams 16b1, 16b2, 16b3, and 16b4; fifth, sixth, seventh, and eighth drive decoupling beams 14b1, 14b2, 14b3, and 14b4; and fifth, sixth, seventh, and eighth detection connection beams 15b1, 15b2, 15b3, and 15b4.

[0064] The first drive detection comb module 3a consists of a first drive detection comb 22a2 and first and second orthogonal combs 11a3 and 11a4.

[0065] The second drive detection comb module 3b is composed of the first drive detection comb 22b2 and the third and fourth orthogonal combs 11b3 and 11b4, respectively.

[0066] The first and second support beam modules 23a and 23b are composed of the first and second support beams 21a and 21b and the seventh and eighth anchor points 20a and 20b; the first drive comb tooth module 2a, the first mass block module 1a, and the first drive detection comb tooth module 3a constitute the first gyroscope substructure 10a.

[0067] The second drive comb module 2b, the second mass block module 1b, and the second drive detection comb module 3b constitute the second gyroscope substructure 10b.

[0068] The upper silicon-sensitive structure is bonded to the lower glass substrate structure through anchor points 13a1, 13a2, 13a3, 13a4, 13b1, 13b2, 13b3, 13b4, 20a, and 20b.

[0069] The first and second support beams 21a and 21b connect the first and second gyroscope substructures 10a and 10b with the ninth and tenth anchor points 20a and 20b, providing support and coupling. The first drive comb tooth 22a1 is used to provide simple harmonic driving force to the first gyroscope substructure 22b1, and the first drive detection comb tooth 22a2 is used to detect the simple harmonic vibration of the outer frame 12a of the first mass block, so as to realize the closed-loop drive of the first gyroscope substructure 10a.

[0070] The second drive comb 22b1 is used to provide a simple harmonic driving force to the second gyroscope substructure 10b, and the second drive detection comb 22b2 is used to detect the vibration of the second mass block outer frame 12b, so as to realize the closed-loop drive of the second gyroscope substructure 10b.

[0071] Because the first, second, third, fourth, fifth, sixth, seventh, and eighth driving decoupling beams 14a1, 14a2, 14a3, 14a4, 14b1, 14b2, 14b3, and 14b4 have high stiffness in the X-axis driving direction, the first and second mass blocks 17a and 17b will remain stationary in the X-axis driving direction. When the gyroscope is subjected to an angular velocity perpendicular to the Z-axis of the gyroscope surface, a Coriolis force will be generated in the Y-axis detection direction, thereby coupling the simple harmonic vibration in the X-axis driving direction to the Y-axis detection direction. The connecting beams 15a1, 15a2, 15a3, 15a4, 15b1, 15b2, 15b3, and 15b4 have relatively high stiffness in the Y-axis detection direction, while the first, second, third, fourth, fifth, sixth, seventh, and eighth driving decoupling beams 14a1, 14a2, 14a3, 14a4, 14b1, 14b2, 14b3, and 14b4 have relatively low stiffness in the Y-axis detection direction. Therefore, the outer frames 12a and 12b of the first and second mass blocks will respectively drive the first and second mass blocks 17a and 17b to perform simple harmonic motion with the same frequency and opposite phase in the Y-axis detection direction.

[0072] The opposite-phase vibration of the first and second mass blocks 17a and 17b in the Y-axis detection direction will cause the first and second excitation coils 18a and 18b and the first and second iron cores 19a and 19b to vibrate in opposite phases, thereby generating a dynamic magnetic field that changes in opposite phases. By detecting the change in the magnetic field, the vibration amplitude of the mass blocks can be differentially detected, and the differential detection of the angular velocity to be measured can be further realized.

[0073] The first, second, third, and fourth oscillation suppression beams 16a1, 16a2, 16a3, and 16a4 are used to suppress the vertical oscillation of the first mass block outer frame 12a along the Z-axis, and the fifth, sixth, seventh, and eighth oscillation suppression beams 16b1, 16b2, 16b3, and 16b4 are used to suppress the vertical oscillation of the second mass block outer frame 12b along the Z-axis, so as to increase the stability of the drive.

[0074] The first, second, third, and fourth orthogonal correction comb teeth 11a1, 11a2, 11a3, and 11a4 are used to provide orthogonal force to the first gyroscope substructure 10a, and the fifth, sixth, seventh, and eighth orthogonal correction comb teeth 11b1, 11b2, 11b3, and 11b4 are used to provide orthogonal force to the second gyroscope substructure 10b, so as to achieve orthogonal correction in the Y-axis detection direction.

[0075] The first and second support beam modules 23a and 23b are located directly above and directly below the silicon-sensitive structure, respectively. The left ends of the first and second support beams 21a and 21b are connected to the midpoints of the upper and lower sides of the outer frame 12a of the first mass block, respectively, and the right ends are connected to the midpoints of the upper and lower sides of the outer frame 12b of the second mass block, respectively. The middle ends are fixed to the ninth and tenth anchor points 20a and 20b, respectively. The ninth and tenth anchor points 20a and 20b are located directly above and directly below the vertical axis of symmetry of the first and second gyroscope substructures 10a and 10b, respectively.

[0076] The first drive comb module 2a and the first drive comb module 3a are located directly to the left and right of the first mass block module 1a, respectively. The first drive comb 22a1 is located at the midpoint of the left side of the outer frame 12a of the first mass block, and the first drive detection comb 22a2 is located at the midpoint of the right side of the outer frame 12a of the first mass block. The second drive comb module 2b and the second drive comb module 3b are located directly to the left and right of the first mass block module 1a, respectively. The second drive comb 22b1 is located at the midpoint of the right side of the outer frame 12b of the second mass block, and the second drive detection comb 22b2 is located at the midpoint of the left side of the outer frame 12b of the second mass block.

[0077] The first, second, third, and fourth orthogonal correction comb teeth 11a1, 11a2, 11a3, and 11a4 are located at the upper left, lower left, lower right, and upper right of the outer frame 12a of the first mass block, respectively; the fifth, sixth, seventh, and eighth orthogonal correction comb teeth 11b1, 11b2, 11b3, and 11b4 are located at the upper right, lower right, lower left, and upper left of the outer frame 12b of the second mass block, respectively; the first, second, third, and fourth oscillation suppression beams 16a1, 16a2, 16a3, and 16a4 are located at the upper left, lower left, lower right, and upper right corners of the outer frame 12a of the first mass block, respectively; the fifth, sixth, seventh, and eighth oscillation suppression beams 16b1, 16b2, 16b3, and 16b4 are located at the upper right, lower right, lower left, and upper left corners of the outer frame 12b of the second mass block, respectively.

[0078] The first and second mass blocks 17a and 17b are located at their centers within the outer frames 12a and 12b of the first and second mass blocks, respectively; the first and fourth anchor points 13a1 and 13a4 are located at the upper left and upper right of the first mass block 17a, respectively; the second and third anchor points 13a2 and 13a3 are located at the lower left and lower right of the first mass block 17a, respectively; and the fifth and eighth anchor points 13b1 and 13b4 are located at the upper right and upper left of the second mass block 17b, respectively.

[0079] The sixth and seventh anchor points 13b2 and 13b3 are located at the lower right and lower left of the second mass block 17b, respectively; the first and second drive decoupling beams 14a1 and 14a2 are located at the upper left and upper right of the first mass block 17a, respectively, and are below the first and fourth anchor points 13a1 and 13a4; the third and fourth drive decoupling beams 14a3 and 14a4 are located at the lower left and lower right of the first mass block 17a, respectively, and are above the second and third anchor points 13a2 and 13a3; the fifth and sixth drive decoupling beams 14b1 and 14b2 are located at the upper right and upper left of the first mass block 17a, respectively; and the seventh and eighth drive decoupling beams 14a1 and 14b2 are located at the upper right and upper left of the first mass block 17a, respectively. b3 and 14b4 are located at the lower right and lower left of the first mass block 17a, respectively, and above the sixth and seventh anchor points 13b2 and 13b3; the first and second detection connecting beams 15a1 and 15a2 are located at the upper left and upper left of the left side of the first mass block 17a, respectively; the third and fourth detection connecting beams 15a3 and 15a4 are located at the lower right and upper right of the right side of the first mass block 17a, respectively; the fifth and sixth detection connecting beams 15b1 and 15b2 are located at the upper right and lower right of the right side of the second mass block 17b, respectively; and the seventh and eighth detection connecting beams 15b3 and 15b4 are located at the lower left and upper left of the left side of the second mass block 17b, respectively.

[0080] All decoupling beams and connecting beams are U-shaped beams; the first and second iron cores 19a and 19b are rectangular, with the first iron core 19a located at the center of the first mass block 17a and the second iron core 19b located at the center of the second mass block 17b; the first and second excitation coils 18a and 18b are encircled at right angles, with the first excitation coil 18a located around the first iron core 19a and the second excitation coil 18b located around the second iron core 19b.

[0081] like Figure 3As shown: The front metal electrode of the lower glass substrate structure includes first and second driving electrodes 29a and 29b, first and second driving detection electrodes 24a and 24b, first, second, third, fourth, fifth, sixth, seventh, and eighth orthogonal electrodes 28a1, 28a2, 28a3, 28a4, 28b1, 28b2, 28b3, and 28b4, first and second coil input interfaces 26a1 and 26b1; first and second coil input electrodes 27a1 and 27b1; first and second coil output interfaces 26a2 and 26b2; first and second pair coil output electrodes 27a2 and 27b2; and a first, second, third, and fourth common electrode 25a. 1, 25a2, 25b1, 25b2; the first and second driving electrodes 29a and 29b are connected to the first and second driving comb teeth 22a1 and 22b1 respectively, and are used to input simple harmonic driving signals to the first and second gyroscope substructures 10a and 10b; the first and second driving detection electrodes 24a and 24b are connected to the first and second driving detection comb teeth 22a2 and 22b2 respectively, and are used to output the driving detection signals of the first and second gyroscope substructures 10a and 10b; the first, second, third, and fourth orthogonal electrodes 28a1, 28a2, 28a3, and 28a4 are connected to the first, second, third, and fourth orthogonal correction comb teeth 11a1 and 11a1 respectively. 2. 11a3 and 11a4 are connected to input orthogonal correction signals to the first gyroscope substructure 10a. The fifth, sixth, seventh, and eighth orthogonal electrodes 28b1, 28b2, 28b3, and 28b4 are connected to the fifth, sixth, seventh, and eighth orthogonal correction comb teeth 11b1, 11b2, 11b3, and 11b4, respectively, to input orthogonal correction signals to the second gyroscope substructure 10b. The first and second excitation coil input electrodes 27a1 and 27b1 are connected to the first and second excitation coil input interfaces 26a1 and 26b1, respectively, to provide input signals to the first and second excitation coils 18a and 18b. The first and second coil outputs... Electrodes 27a2 and 27b2 are connected to the output interfaces 26a2 and 26b2 of the first and second coils, respectively, for outputting the output signals of the first and second excitation coils 18a and 18b; the first and second common electrodes 25a1 and 25a2 are connected to the first and second anchor points 13a1 and 13a2 and the seventh and eighth anchor points 13a3 and 13a4, respectively, for inputting carrier signals to the first gyroscope substructure 10a; the third and fourth common electrodes 25b1 and 25b2 are connected to the fifth and sixth anchor points 13b1 and 13b2 and the seventh and eighth anchor points 13b3 and 13b4, respectively, for inputting carrier signals to the second gyroscope substructure 10a.

[0082] Further from Figure 3As shown, the first driving electrode 29a is located directly to the left of the first driving comb tooth 22a1, and the second driving electrode 29b is located directly to the right of the second driving comb tooth 22b1; the first driving detection electrode 24a is located to the upper left of the first driving detection comb tooth 22a2 and to the upper right of the first mass block 17a, and the second driving detection electrode 24b is located to the lower right of the second driving detection comb tooth 22b2 and to the lower left of the second mass block 17b; the first and second orthogonal... Electrodes 28a1 and 28a2 are located at the upper left and lower left of the first and second orthogonal correction comb teeth 11a1 and 11a2, respectively. The third and fourth orthogonal electrodes 28a3 and 28a4 are located directly below and above the third and fourth orthogonal correction comb teeth 11a3 and 11a4, respectively. The fifth and sixth orthogonal electrodes 28b1 and 28b2 are located at the upper right and lower right of the fifth and sixth orthogonal correction comb teeth 11b1 and 11b2, respectively. The seventh and eighth orthogonal electrodes 28b3 and 28b4... The first and second excitation coil input interfaces 26a1 and 26b1 are respectively located at the lower left and upper left of the seventh and eighth orthogonal correction comb teeth 11b3 and 11b4; the first and second excitation coil input interfaces 26a2 and 26b2 are respectively located directly above the first and second iron cores 19a and 19b; the first and second excitation coil output interfaces 26a2 and 26b2 are respectively located directly below the first and second iron cores 19a and 19b; the first and second excitation coil input electrodes 27a1 and 27b1 are respectively located at the first and second excitation coil input interfaces. Directly above ports 26a1 and 26b1, the first and second excitation coil output electrodes 27a2 and 27b2 are located directly below the first and second excitation coil output interfaces 26a2 and 26b2, respectively; the first and second common electrodes 25a1 and 25a2 are located to the lower right and upper left of the second and fourth anchor points 13a2 and 13a4, respectively; the third and fourth common electrodes 25b1 and 25b2 are located to the lower left and upper right of the sixth and eighth anchor points 13b2 and 13b4, respectively.

[0083] like Figure 4As shown: The first and third tunnel magnetoresistive detection modules 4a1 and 4a2, arranged on the front side of the lower glass substrate structure, are used to detect the magnetic field changes caused by the vibration of the first mass block 17a along the Y detection direction. When the first mass block 17a vibrates along the Y detection direction, the magnetic field strength around the first and third tunnel magnetoresistive sensors 5a1 and 5a2 changes in the opposite direction, so their output values ​​deviate from the initial values ​​in the opposite direction, thus realizing differential detection; the symmetrically arranged second and fourth tunnel magnetoresistive detection modules 4b1 and 4b2 are used to detect the magnetic field changes caused by the vibration of the second mass block 17b along the Y detection direction. When the second mass block 17b vibrates along the Y detection direction, the magnetic field strength around the second and fourth tunnel magnetoresistive sensors 4b1 and 4b2 changes in the opposite direction, so their output values ​​deviate from the initial values ​​in the opposite direction, thus realizing differential detection. The magnetic field strength around the resistance sensors 5b1 and 5b2 changes in opposite directions, so their output values ​​deviate from the initial values ​​in the opposite direction, thus realizing differential detection; the first and second output electrodes 6a1 and 6a2 and the first tunnel sensor 5a1 are used to output the output value of the first tunnel sensor 5a1; the third and fourth output electrodes 6b1 and 6b2 and the second tunnel sensor 5b1 are used to output the output value of the second tunnel magnetoresistive sensor 5b1; the fifth and sixth output electrodes 6a3 and 6a4 and the third tunnel sensor 5a2 are used to output the output value of the third tunnel magnetoresistive sensor 5a2; and the seventh and eighth output electrodes 6b3 and 6b4 are used to output the output value of the fourth tunnel magnetoresistive sensor 5b2.

[0084] Further analysis of the lower tunnel magnetoresistive detection module diagram reveals that the first and third tunnel magnetoresistive sensors 5a1 and 5a2 are rectangular and symmetrical about the horizontal midline, both located directly below the first mass block 17a. The second and fourth tunnel magnetoresistive sensors 5b1 and 5b2 are rectangular and symmetrical about the horizontal midline, both located directly below the second mass block 17b. The first and second tunnel magnetoresistive sensors 5a1 and 5b1 are symmetrical about the vertical midline, as are the third and fourth tunnel magnetoresistive sensors 5a2 and 5b2. The internal arrangement of the first, second, third, and fourth tunnel magnetoresistive sensors 5a1, 5b1, 5a2, and 5b2 is S-shaped. The first and second output electrodes are rectangular, 6a1 and 6a2, connected to the two output ports of the first tunnel magnetoresistive sensor 5a1, and symmetrically arranged on the left and right sides of the first tunnel magnetoresistive sensor 5a1. The third and fourth output electrodes 6b1 and 6b2 on both sides of the first tunnel magnetoresistive sensor 5a1 are rectangular. The third and fourth output electrodes 6b1 and 6b2 are connected to the two output ports of the second tunnel magnetoresistive sensor 5b1 and are symmetrically arranged on both sides of the second tunnel magnetoresistive sensor 5b1. The fifth and sixth output electrodes 6a3 and 6a4 are rectangular. The fifth and sixth output electrodes 6a3 and 6a4 are connected to the two output ports of the third tunnel magnetoresistive sensor 5a2 and are symmetrically arranged on both sides of the third tunnel magnetoresistive sensor 5a2. The seventh and eighth output electrodes 6b3 and 6b4 are rectangular. The seventh and eighth output electrodes 6b3 and 6b4 are connected to the two output ports of the fourth tunnel magnetoresistive sensor 5b2 and are symmetrically arranged on both sides of the fourth tunnel magnetoresistive sensor 5b2.

[0085] In this embodiment, the excitation mechanism, namely the excitation coil and the iron core, is integrated on the gyroscope mass block. Compared with placing a permanent magnet on the surface of the mass block, the device size is reduced and the integration is greatly improved. The magnetic field generated by the excitation coil and the iron core is stable, avoiding the problem of magnetic degradation of the permanent magnet. At the same time, the field strength is controllable and can be adjusted by the current of the excitation coil. In addition, each gyroscope substructure is equipped with two tunnel magnetoresistive sensors arranged symmetrically, which also constitutes a differential structure. The dual differential structure can effectively suppress common-mode errors caused by the external environment and improve the reliability of the device.

Claims

1. A high-precision dual-mass silicon microgyroscope device based on the tunneling magnetoresistance effect, characterized in that: The device consists of two layers: the upper layer is a silicon-sensitive structure, and the lower layer is a glass substrate structure with metal electrodes and a tunnel magnetoresistive detection module. The upper structure includes a first mass block module (1a) and a second mass block module (1b) arranged symmetrically; a first drive comb tooth module (2a) and a second drive comb tooth module (2b) arranged symmetrically; a first drive detection comb tooth module (3a) and a second drive detection comb tooth module (3b) arranged symmetrically; and a first support beam module (23a) and a second support beam module (23b) arranged symmetrically. The first drive comb module (2a) is connected to the left side of the first mass block module (1a), the first drive detection comb module (3a) is connected to the right side of the first mass block module (1a), the second drive comb module (2b) is connected to the right side of the second mass block module (1b), the second drive detection comb module (3b) is connected to the left side of the second mass block module (1b), the first support beam module (23a) and the second support beam module (23b) are located at the center of the front and rear sides of the upper structure, respectively, and are used to support and couple the first mass block module (1a) and the second mass block module (1b); The lower structure includes a glass substrate (9), two pairs of tunnel magnetoresistive detection modules, several signal leads and metal electrodes, wherein the two pairs of tunnel magnetoresistive detection modules include a first tunnel magnetoresistive detection module (4a1) and a third tunnel magnetoresistive detection module (4a2); a second tunnel magnetoresistive detection module (4b1) and a fourth tunnel magnetoresistive detection module (4b2); The first, second, third, and fourth tunnel magnetoresistive detection modules (4a1, 4b1, 4a2, 4b2) are composed of the first, second, third, and fourth tunnel magnetoresistive sensors (5a1, 5b1, 5a2, 5b2) and the first, second, third, fourth, fifth, sixth, seventh, and eighth output electrodes (6a1, 6a2, 6b1, 6b2, 6a3, 6a4, 6b3, 6b4). The first, second, third, and fourth tunnel magnetoresistive sensors (5a1, 5b1, 5a2, and 5b2) are all composed of six thin films: from top to bottom, they are the top layer (7a), the free layer (7b), the tunnel barrier layer (7c), the ferromagnetic layer (7d), the antiferromagnetic layer (7e), and the bottom layer (7f). The first and third tunnel magnetoresistive detection modules (4a1, 4a2) are located directly below the first mass block module (1a). They detect and output the vibration displacement of the first mass block module (1a) caused by Coriolis acceleration by changing the two relative magnetization directions (8a, 8b) of its internal free layer (7b) and ferromagnetic layer (7d). The second and fourth tunnel magnetoresistive detection modules (4b1 and 4b2) are located directly below the second mass block module (1b) and are used to detect and output the vibration displacement of the second mass block module (1b) caused by Coriolis acceleration. The first and second drive comb modules (2a, 2b), the first and second mass block modules (1a, 1b), the first and second drive detection comb modules (3a, 3b), the first and second tunnel magnetoresistive detection modules (4a1, 4b1), and the third and fourth tunnel magnetoresistive detection modules (4a2, 4b2) are symmetrically distributed on both sides of the vertical axis; the first drive comb module (2a) and the first drive detection comb module (3a) are located on the left and right sides of the first mass block module (1a), respectively. The second drive comb module (2b) and the second drive detection comb module (3b) are located on the right and left sides of the second mass block module (1b), respectively. The first and third tunnel magnetoresistive detection modules (4a1, 4a2) are located directly below the first mass block module (1a), and the first and third tunnel magnetoresistive detection modules (4a1, 4a2) and the first mass block module (1a) are symmetrical about the line AB. The second and fourth tunnel magnetoresistive detection modules (4b1, 4b2) are located directly below the second mass block module (1b), and the second and fourth tunnel magnetoresistive detection modules (4b1, 4b2) and the second mass block module (1b) are symmetrical about the line CD. The first and second output electrodes (6a1, 6a2) are symmetrically distributed about the left and right sides of the first tunnel magnetoresistive sensor (5a1) about the line AB; the third and fourth output electrodes (6b1, 6b2) are symmetrically distributed about the left and right sides of the second tunnel magnetoresistive sensor (5b1) about the line CD; the fifth and sixth output electrodes (6a3, 6a4) are symmetrically distributed about the left and right sides of the third tunnel magnetoresistive sensor (5a2) about the line AB; the seventh and eighth output electrodes (6b3, 6b4) are symmetrically distributed about the left and right sides of the fourth tunnel magnetoresistive sensor (5b2) about the line CD; the first and second support beam modules (23a, 23b) are located at the center of the front and rear sides respectively, and are symmetrical about the perpendicular bisector. The first and second drive comb modules (2a, 2b) in the upper silicon sensitive structure are composed of the first and second drive combs (22a1, 22b1) and the first, second, third, and fourth orthogonal combs (11a1, 11a2, 11b1, 11b2). The first mass block module (1a) consists of a first mass block (17a), a first mass block outer frame (12a), a first excitation coil (18a), a first iron core (19a), first, second, third, and fourth anchor points (13a1, 13a2, 13a3, 13a4), first, second, third, and fourth swing suppression beams (16a1, 16a2, 16a3, 16a4), first, second, third, and fourth drive decoupling beams (14a1, 14a2, 14a3, 14a4), and first, second, third, and fourth detection connection beams (15a1, 15a2, 15a3, 15a4). The second mass block module (1b) consists of a second mass block (17b), a second mass block outer frame (12b), a second excitation coil (18b), a second iron core (19b), fifth, sixth, seventh, and eighth anchor points (13b1, 13b2, 13b3, 13b4), fifth, sixth, seventh, and eighth swing suppression beams (16b1, 16b2, 16b3, 16b4), fifth, sixth, seventh, and eighth drive decoupling beams (14b1, 14b2, 14b3, 14b4), and fifth, sixth, seventh, and eighth detection connection beams (15b1, 15b2, 15b3, 15b4). The first drive detection comb module (3a) consists of the first drive detection comb (22a2) and the third and fourth orthogonal combs (11a3, 11a4); The second drive detection comb module (3b) is composed of the second drive detection comb (22b2) and the third and fourth orthogonal combs (11b3, 11b4); The first and second support beam modules (23a, 23b) are composed of the first and second support beams (21a, 21b) and the ninth and tenth anchor points (20a, 20b); The first drive comb module (2a), the first mass block module (1a), and the first drive detection comb module (3a) constitute the first gyroscope substructure (10a); The second drive comb module (2b), the second mass block module (1b), and the second drive detection comb module (3b) constitute the second gyroscope substructure (10b); The upper silicon-sensitive structure is bonded to the lower glass substrate structure through the first, second, third, fourth, fifth, sixth, seventh, eighth, ninth, and tenth anchor points (13a1, 13a2, 13a3, 13a4, 13b1, 13b2, 13b3, 13b4, 20a, and 20b). The first and second support beams (21a, 21b) connect the first and second gyroscope substructures (10a, 10b) with the ninth and tenth anchor points (20a, 20b), serving as support and coupling. The second drive comb (22b1) provides harmonic driving force to the second gyroscope substructure (10b), and the second drive detection comb (22b2) detects the vibration of the outer frame of the second mass block (12b) to achieve closed-loop drive of the second gyroscope substructure (10b). The anti-phase vibration of the first and second mass blocks (17a, 17b) in the Y-axis detection direction will cause the anti-phase vibration of the first and second excitation coils (18a, 18b) and the first and second iron cores (19a, 19b), thereby generating an anti-phase changing dynamic magnetic field. The first, second, third, and fourth oscillation suppression beams (16a1, 16a2, 16a3, 16a4) are used to suppress the vertical oscillation of the first mass block outer frame (12a) along the Z-axis, and the fifth, sixth, seventh, and eighth oscillation suppression beams (16b1, 16b2, 16b3, 16b4) are used to suppress the vertical oscillation of the second mass block outer frame (12b) along the Z-axis. The first, second, third, and fourth orthogonal correction comb teeth (11a1, 11a2, 11a3, 11a4) are used to provide orthogonal forces to the first gyroscope substructure (10a), and the fifth, sixth, seventh, and eighth orthogonal correction comb teeth (11b1, 11b2, 11b3, 11b4) are used to provide orthogonal forces to the second gyroscope substructure (10b); the first and second support beam modules (23a, 23b) are located directly above and directly below the silicon-sensitive structure, respectively. The left ends of the first and second support beams (21a and 21b) are connected to the midpoints of the upper and lower sides of the outer frame of the first mass block (12a) respectively, and the right ends are connected to the midpoints of the upper and lower sides of the outer frame of the second mass block (12b) respectively. The middle ends are fixed to the ninth and tenth anchor points (20a and 20b) respectively. The ninth and tenth anchor points (20a and 20b) are located directly above and directly below the vertical axis of symmetry of the first and second gyroscope substructures (10a and 10b) respectively. The first driving comb module (2a) and the first driving detection comb module (3a) are located directly to the left and right of the first mass block module (1a), respectively. The first driving comb (22a1) is located at the midpoint of the left side of the outer frame (12a) of the first mass block, and the first driving detection comb (22a2) is located at the midpoint of the right side of the outer frame (12a) of the first mass block. The second driving detection comb module (3b) and the second driving comb module (2b) are located directly to the left and right of the second mass block module (1b), respectively. The second driving comb (22b1) is located at the midpoint of the right side of the outer frame (12b) of the second mass block, and the second driving detection comb (22b2) is located at the midpoint of the left side of the outer frame (12b) of the second mass block. First, second, third, and fourth orthogonal corrections. The comb teeth (11a1, 11a2, 11a3, 11a4) are located at the upper left, lower left, lower right, and upper right of the outer frame of the first mass block (12a), respectively; the fifth, sixth, seventh, and eighth orthogonal correction comb teeth (11b1, 11b2, 11b3, 11b4) are located at the upper right, lower right, lower left, and upper left of the outer frame of the second mass block (12b), respectively; the first, second, third, and fourth oscillation suppression beams (16a1, 16a2, 16a3, 16a4) are located at the upper left, lower left, lower right, and upper right corners of the outer frame of the first mass block (12a), respectively; and the fifth, sixth, seventh, and eighth oscillation suppression beams (16b1, 16b2, 16b3, 16b4) are located at the upper right, lower right, lower left, and upper left corners of the outer frame of the second mass block (12b), respectively. The first and second mass blocks (17a, 17b) are located at the center of the outer frame (12a, 12b) of the first and second mass blocks, respectively; the first and fourth anchor points (13a1, 13a4) are located at the upper left and upper right of the first mass block (17a), respectively; the second and third anchor points (13a2, 13a3) are located at the lower left and lower right of the first mass block (17a), respectively; and the fifth and eighth anchor points (13b1, 13b4) are located at the upper right and upper left of the second mass block (17b), respectively. The sixth and seventh anchor points (13b2, 13b3) are located at the lower right and lower left of the second mass block (17b), respectively; the first and second drive decoupling beams (14a1, 14a2) are located at the upper left and upper right of the first mass block (17a), respectively, and are located below the first and fourth anchor points (13a1, 13a4); the third and fourth drive decoupling beams (14a3, 14a4) are located at the lower left and lower right of the first mass block (17a), respectively, and are located below the second... Above the first and third anchor points (13a2, 13a3), the fifth and sixth drive decoupling beams (14b1, 14b2) are located on the upper right and upper left of the first mass block (17a), respectively; the seventh and eighth drive decoupling beams (14b3, 14b4) are located on the lower right and lower left of the first mass block (17a), respectively, and are located above the sixth and seventh anchor points (13b2, 13b3); the first and second detection connecting beams (15a1, 15a2) are located on the first mass block (17a), respectively. The upper left and lower left sides of the left side of the first mass block (17a), the third and fourth detection connecting beams (15a3, 15a4) are located at the lower right and upper right sides of the right side of the first mass block (17a), the fifth and sixth detection connecting beams (15b1, 15b2) are located at the upper right and lower right sides of the right side of the second mass block (17b), and the seventh and eighth detection connecting beams (15b3, 15b4) are located at the lower left and upper left sides of the left side of the second mass block (17b); among them, all decoupling beams and connecting beams are located at the upper left and lower left sides of the left side of the second mass block (17b). All connecting beams are U-shaped beams; the first and second iron cores (19a, 19b) are both rectangular, with the first iron core (19a) located at the center of the first mass block (17a) and the second iron core (19b) located at the center of the second mass block (17b); the first and second excitation coils (18a, 18b) are both encircled at right angles, with the first excitation coil (18a) located outside the first iron core (19a) and the second excitation coil (18b) located outside the second iron core (19b).

2. The high-precision dual-mass silicon microgyroscope device based on tunneling magnetoresistance effect according to claim 1, characterized in that: The front metal electrodes of the lower glass substrate structure include first and second driving electrodes (29a, 29b), first and second driving detection electrodes (24a, 24b), first, second, third, fourth, fifth, sixth, seventh, and eighth orthogonal electrodes (28a1, 28a2, 28a3, 28a4, 28b1, 28b2, 28b3, 28b4), first and second excitation coil input interfaces (26a1, 26b1), and first and second excitation coil input electrodes (27a1, 28b2, 28b3, 28b4). 27b1), first and second excitation coil output interfaces (26a2, 26b2), first and second pairs of coil output electrodes (27a2, 27b2), first, second, third, and fourth common electrodes (25a1, 25a2, 25b1, 25b2); first and second drive electrodes (29a, 29b), which are connected to the first and second drive comb teeth (22a1, 22b1) respectively, and are used to input simple harmonic drive signals to the first and second gyroscope substructures (10a, 10b); The first and second drive detection electrodes (24a, 24b) are connected to the first and second drive detection comb teeth (22a2, 22b2), respectively, and are used to output the drive detection signals of the first and second gyroscope substructures (10a, 10b); the first, second, third, and fourth orthogonal electrodes (28a1, 28a2, 28a3, 28a4) are connected to the first, second, third, and fourth orthogonal correction comb teeth (11a1, 11a2, 11a3, 11a4), respectively. The first and second excitation coil input electrodes (27a1 and 27b1) are connected to the first gyroscope substructure (10a) to input orthogonal correction signals. The fifth, sixth, seventh, and eighth orthogonal electrodes (28b1, 28b2, 28b3, and 28b4) are connected to the fifth, sixth, seventh, and eighth orthogonal correction comb teeth (11b1, 11b2, 11b3, and 11b4) to input orthogonal correction signals to the second gyroscope substructure (10b). The first and second excitation coil input interfaces (26a1, 26b1) are connected to each other respectively to provide input signals to the first and second excitation coils (18a, 18b); the first and second excitation coil output electrodes (27a2, 27b2) are connected to the first and second excitation coil output interfaces (26a2, 26b2) respectively to output the output signals of the first and second excitation coils (18a, 18b); the first and second common electrodes (25a1, 27b2) are connected to each other. 5a2) is connected to the first and second anchor points (13a1, 13a2) and the seventh and eighth anchor points (13a3, 13a4) respectively, and is used to input carrier signals to the first gyroscope substructure (10a). The third and fourth common electrodes (25b1, 25b2) are connected to the fifth and sixth anchor points (13b1, 13b2) and the seventh and eighth anchor points (13b3, 13b4) respectively, and are used to input carrier signals to the second gyroscope substructure (10b).

3. The high-precision dual-mass silicon microgyroscope device based on tunneling magnetoresistance effect according to claim 2, characterized in that: The first driving electrode (29a) is located directly to the left of the first driving comb tooth (22a1), and the second driving electrode (29b) is located directly to the right of the second driving comb tooth (22b1); the first driving detection electrode (24a) is located to the upper left of the first driving detection comb tooth (22a2) and to the upper right of the first mass block (17a), and the second driving detection electrode (24b) is located to the lower right of the second driving detection comb tooth (22b2) and to the lower left of the second mass block (17b); the first The first and second orthogonal electrodes (28a1, 28a2) are located to the upper left and lower left of the first and second orthogonal correction combs (11a1, 11a2), respectively. The third and fourth orthogonal electrodes (28a3, 28a4) are located directly below and above the third and fourth orthogonal correction combs (11a3, 11a4), respectively. The fifth and sixth orthogonal electrodes (28b1, 28b2) are located to the upper right and lower right of the fifth and sixth orthogonal correction combs (11b1, 11b2), respectively. The seventh and eighth orthogonal electrodes (28b3, 28b4) are located to the upper right and lower right of the fifth and sixth orthogonal correction combs (11b1, 11b2), respectively. b4) are located to the lower left and upper left of the seventh and eighth orthogonal correction comb teeth (11b3, 11b4), respectively; the input interfaces of the first and second excitation coils (26a1, 26b1) are located directly above the first and second iron cores (19a, 19b), respectively; the output interfaces of the first and second excitation coils (26a2, 26b2) are located directly below the first and second iron cores (19a, 19b), respectively; the input electrodes of the first and second excitation coils (27a1, 27b1) are located at the input interfaces of the first and second excitation coils, respectively. Directly above the ports (26a1, 26b1), the first and second excitation coil output electrodes (27a2, 27b2) are located directly below the first and second excitation coil output interfaces (26a2, 26b2), respectively; the first and second common electrodes (25a1, 25a2) are located to the lower right and upper left of the second and fourth anchor points (13a2, 13a4), respectively; and the third and fourth common electrodes (25b1, 25b2) are located to the lower left and upper right of the sixth and eighth anchor points (13b2, 13b4), respectively.

4. The high-precision dual-mass silicon microgyroscope device based on tunneling magnetoresistance effect according to claim 1, characterized in that: The first and third tunnel magnetoresistive detection modules (4a1, 4a2) arranged on the front of the lower glass substrate structure are used to detect the magnetic field changes caused by the vibration of the first mass block (17a) along the Y detection direction. When the first mass block (17a) vibrates along the Y detection direction, the magnetic field strength around the first and third tunnel magnetoresistive sensors (5a1, 5a2) changes in the opposite direction, so their output values ​​deviate from the initial values ​​in the opposite direction, thereby realizing differential detection. The symmetrically arranged second and fourth tunnel magnetoresistive detection modules (4b1, 4b2) are used to detect the magnetic field changes caused by the vibration of the second mass block (17b) along the Y detection direction. When the second mass block (17b) vibrates along the Y detection direction, the magnetic field strength around the first and third tunnel magnetoresistive sensors (5a1, 5a2) changes in the opposite direction, so their output values ​​deviate from the initial values ​​in the opposite direction, thereby realizing differential detection. When the vibration is directed, the magnetic field strength around the second and fourth tunnel magnetoresistive sensors (5b1, 5b2) changes in the opposite direction, so their output values ​​deviate from the initial values ​​in the opposite direction, thus realizing differential detection; the first and second output electrodes (6a1, 6a2) are used to output the output value of the first tunnel magnetoresistive sensor (5a1), the third and fourth output electrodes (6b1, 6b2) are used to output the output value of the second tunnel magnetoresistive sensor (5b1), the fifth and sixth output electrodes (6a3, 6a4) are used to output the output value of the third tunnel magnetoresistive sensor (5a2), and the seventh and eighth output electrodes (6b3, 6b4) are used to output the output value of the fourth tunnel magnetoresistive sensor (5b2).

5. The high-precision dual-mass silicon microgyroscope device based on tunneling magnetoresistance effect according to claim 1, characterized in that: The first and third tunnel magnetoresistive sensors (5a1, 5a2) are rectangular and symmetrical about the horizontal midline, and both are located directly below the first mass block (17a). The second and fourth tunnel magnetoresistive sensors (5b1, 5b2) are rectangular and symmetrical about the horizontal midline, and both are located directly below the second mass block (17b). The first and second tunnel magnetoresistive sensors (5a1, 5b1) are symmetrical about the vertical midline, and the third and fourth tunnel magnetoresistive sensors (5a2, 5b2) are symmetrical about the vertical midline. The internal arrangement of the first, second, third, and fourth tunnel magnetoresistive sensors (5a1, 5b1, 5a2, 5b2) is "S"-shaped. The first and second output electrodes (6a1, 6a2) are rectangular, connected to the two output ports of the first tunnel magnetoresistive sensor (5a1), and symmetrically arranged on the left and right sides of the first tunnel magnetoresistive sensor (5a1). The third and fourth output electrodes (6b1, 6b2) are rectangular on both sides of the second tunnel magnetoresistive sensor (5b1). The third and fourth output electrodes (6b1, 6b2) are connected to the two output ports of the second tunnel magnetoresistive sensor (5b1) and are symmetrically arranged on both sides of the second tunnel magnetoresistive sensor (5b1). The fifth and sixth output electrodes (6a3, 6a4) are rectangular. The fifth and sixth output electrodes (6a3, 6a4) are connected to the two output ports of the third tunnel magnetoresistive sensor (5a2) and are symmetrically arranged on both sides of the third tunnel magnetoresistive sensor (5a2). The seventh and eighth output electrodes (6b3, 6b4) are rectangular. The seventh and eighth output electrodes (6b3, 6b4) are connected to the two output ports of the fourth tunnel magnetoresistive sensor (5b2) and are symmetrically arranged on both sides of the fourth tunnel magnetoresistive sensor (5b2).

Images