Half-duplex optical transceiver device and method

Abstract

The present invention provides a half-duplex optical transceiver device and method. The half-duplex optical transceiver device includes: an optical device transceiver module, which includes at least one first optoelectronic unit for converting an electrical signal into an optical signal and at least one second optoelectronic unit for converting an optical signal into an electrical signal; a drive amplification module, the output end of the drive amplification module is electrically connected to the first pole of the first optoelectronic unit and the first pole of the second optoelectronic unit; a bias voltage module, the output end of the bias voltage module is electrically connected to the second pole of the first optoelectronic unit; an amplification equalization module, the input end of the amplification equalization module is electrically connected to the second pole of the second optoelectronic unit. The half-duplex optical transceiver device of the present invention can realize the mutual conversion between optical and electrical signals in optical communication. The circuit structure of the entire half-duplex optical transceiver device is simple, and it can effectively isolate the interference caused by the transmitting circuit to the receiving circuit.

Description

Technical Field

[0001] The present invention relates to the field of optical communication, and more particularly, to a half-duplex optical transceiver device and method. Background Art

[0002] Compared with wired or wireless electrical signal transmission methods, optical signal transmission has many advantages, including: no need for wireless spectrum use permission, excellent electromagnetic interference resistance performance, better information confidentiality and safety for users, etc.

[0003] In the optical communication transceiver devices in the related art, due to different optical transceiver devices used, there are different and independent transmit drive circuits, receive amplifier circuits, and corresponding independent optical transceiver devices. Such a typical optical communication transceiver device generally uses two independent optical channels, or adds an optical wavelength division multiplexer with a relatively high cost to establish a two-way optical signal transceiver channel between devices.

[0004] The optical communication transceiver device with the above structural form requires the use of a relatively complex optical signal transceiver processing circuit, or a complex optical path design, and even needs to increase the number of fiber connections between devices and the size of the plug-in boards of the devices. Therefore, it is indeed necessary to simplify the circuit and structure of the optical communication transceiver device. Summary of the Invention

[0005] Embodiments of the present invention provide a half-duplex optical transceiver device and method that overcome the above problems or at least partially solve the above problems.

[0006] In a first aspect, an embodiment of the present invention provides a half-duplex optical transceiver device, including: an optical device transceiver module, where the optical device transceiver module includes at least one first optoelectronic unit for converting an electrical signal into an optical signal and at least one second optoelectronic unit for converting an optical signal into an electrical signal; a drive amplification module, where an output end of the drive amplification module is electrically connected to a first pole of the first optoelectronic unit and a first pole of the second optoelectronic unit; a bias voltage module, where an output end of the bias voltage module is electrically connected to a second pole of the first optoelectronic unit; an amplification equalization module, where an input end of the amplification equalization module is electrically connected to a second pole of the second optoelectronic unit.

[0007] In some embodiments, the half-duplex optical transceiver device has a transmit operating mode. In the transmit operating mode, an input end of the drive amplification module is used to receive a modulated electrical signal, an output end of the drive amplification module is used to output a drive electrical signal, and the bias voltage module is used to output a first bias voltage signal.

[0008] In some embodiments, the half-duplex optical transceiver device has a receiving operating mode. In the receiving operating mode, the input end of the drive amplification module is used to receive a control electrical signal, and the output end of the drive amplification module is used to output a second bias electrical signal.

[0009] In some embodiments, the optical device transceiver module has a first pin, at least one second pin, and a third pin; the first poles of the first optoelectronic unit and the second optoelectronic unit are both electrically connected to the first pin, and the first pin is electrically connected to the output end of the drive amplification module; the second pole of the first optoelectronic unit is electrically connected to the corresponding second pin, and the at least one second pin is respectively electrically connected to the bias voltage module; the second pole of the second optoelectronic unit is electrically connected to the third pin, and the third pin is electrically connected to the amplification equalization module.

[0010] In some embodiments, the first optoelectronic unit includes an LED die, the second optoelectronic unit includes a photosensitive device, and the photosensitive device can be a photosensitive sensor device of a semiconductor material type.

[0011] In some embodiments, the cathode of the LED die is the first pole of the corresponding first optoelectronic unit, and the anode of the LED die is the second pole of the corresponding first optoelectronic unit; the cathode of the photosensitive device is the first pole of the corresponding second optoelectronic unit, and the anode of the photosensitive device is the second pole of the corresponding second optoelectronic unit.

[0012] In some embodiments, the anode of the LED die is the first pole of the corresponding first optoelectronic unit, and the cathode of the LED die is the second pole of the corresponding first optoelectronic unit; the anode of the photosensitive device is the first pole of the corresponding second optoelectronic unit, and the cathode of the photosensitive device is the second pole of the corresponding second optoelectronic unit.

[0013] In some embodiments, the first optoelectronic unit and the second optoelectronic unit each include an LED die, and the LED die of the second optoelectronic unit utilizes its weak photosensitive property, which is equivalent to a photosensitive device.

[0014] In some embodiments, the cathode of the LED die is the first pole of the corresponding first optoelectronic unit or the first pole of the second optoelectronic unit; the anode of the LED die is the second pole of the corresponding first optoelectronic unit or the second pole of the second optoelectronic unit.

[0015] Second aspect, an embodiment of the present invention provides a half-duplex optical transceiver method according to the above-mentioned half-duplex optical transceiver device, including: a half-duplex optical transmission method and a half-duplex optical reception method; the half-duplex optical transmission method includes: the drive amplification module outputs a transmission drive electrical signal to the first pole of the first optoelectronic unit based on the received modulated electrical signal, the bias module outputs a first bias electrical signal to the second pole of the first optoelectronic unit, and the first optoelectronic unit emits light based on the transmission drive electrical signal and the first bias electrical signal; the half-duplex optical reception method includes: the drive amplification module outputs a second bias electrical signal to the first pole of the second optoelectronic unit based on the received control electrical signal, the second optoelectronic unit outputs an optoelectrical signal to the amplification and equalization module based on the second bias electrical signal and the received optical signal, and the amplification and equalization module outputs a received signal based on the optoelectrical signal.

[0016] The half-duplex optical transceiver device and the half-duplex optical transceiver method of the embodiment of the present invention can realize the mutual conversion between optoelectrical signals by designing a composite optical device transceiver module and combining the drive amplification module, the bias module and the amplification and equalization module connected to each interface of the optical device transceiver module. Moreover, the circuit structure of the entire half-duplex optical transceiver device is simple, and it can effectively isolate the interference caused by the transmitting circuit to the receiving circuit. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the following drawings are some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0018] Figure 1 It is a schematic structural diagram of a half-duplex optical transceiver device according to an embodiment of the present invention;

[0019] Figure 2 It is a working principle diagram of the half-duplex optical transceiver device according to an embodiment of the present invention in the transmission working mode, where the dashed arrow represents the visible light signal;

[0020] Figure 3 It is a working principle diagram of the half-duplex optical transceiver device according to an embodiment of the present invention in the reception working mode, where the dashed arrow represents the visible light signal;

[0021] Figure 4 It is a schematic structural diagram of a half-duplex optical transceiver device according to another embodiment of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS:

[0023] 10_half-duplex optical transceiver device;

[0024] 10 - Optical device transceiver module; 11 - First optoelectronic unit; 12 - Second optoelectronic unit; 13 - First pin; 14 - Second pin; 15 - Third pin;

[0025] 20 - Driver amplification module; 21 - Driver amplifier; 30 - Bias module; 40 - Amplification and equalization module; 41 - Amplification and equalizer. Specific embodiments

[0026] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are some, but not all, of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0027] The following refers to Figures 1 - 4 to describe the half-duplex optical transceiver device 100 of the embodiments of the present invention, where the half-duplex optical transceiver device 100 of the embodiments of the present invention has a transmit operating mode and a receive operating mode. In the transmit operating mode, the half-duplex optical transceiver device 100 can convert the received electrical signal into an optical signal for output; in the receive operating mode, the half-duplex optical transceiver device 100 can convert the received optical signal into an electrical signal for output; however, the above two operating modes of the half-duplex optical transceiver device 100 cannot be carried out simultaneously.

[0028] As Figure 1 shown, the half-duplex optical transceiver device 100 of the embodiments of the present invention includes: an optical device transceiver module 10, a driver amplification module 20, a bias module 30, and an amplification and equalization module 40.

[0029] Among them, the optical device transceiver module 10 includes at least one first optoelectronic unit 11 and at least one second optoelectronic unit 12. The first optoelectronic unit 11 is used to convert an electrical signal into an optical signal and transmit it, and the second optoelectronic unit 12 is used to convert the received optical signal into an electrical signal. The above optical signal can be a visible light signal, so that the half-duplex optical transceiver device 100 can be a visible light communication device, which has better privacy and security.

[0030] In other words, the optical device transceiver module 10 can realize the mutual conversion between optical and electrical signals. The optical device transceiver module 10 can be a composite optical device transceiver module. In actual implementation, the optical device transceiver module 10 can be encapsulated with one or more semiconductor material die that can realize optoelectronic conversion.

[0031] Among them, Figure 1In the illustrated embodiment, the optical device transceiver module 10 includes a plurality of first optoelectronic units 11 and a plurality of second optoelectronic units 12.

[0032] The first optoelectronic unit 11 includes a first pole ( Figure 1 a pole at the lower end of the first optoelectronic unit 11 in the figure) and a second pole ( Figure 1 a pole at the upper end of the first optoelectronic unit 11 in the figure). One of the first pole and the second pole corresponds to the cathode of the first optoelectronic unit 11, and the other of the first pole and the second pole corresponds to the anode of the first optoelectronic unit 11.

[0033] The second optoelectronic unit 12 includes a first pole ( Figure 1 a pole at the lower end of the second optoelectronic unit 12 in the figure) and a second pole ( Figure 1 a pole at the upper end of the second optoelectronic unit 12 in the figure). One of the first pole and the second pole corresponds to the cathode of the second optoelectronic unit 12, and the other of the first pole and the second pole corresponds to the anode of the second optoelectronic unit 12.

[0034] The output end of the drive amplification module 20 is electrically connected to the first pole of the first optoelectronic unit 11, and the output end of the bias voltage module 30 is electrically connected to the second pole of the first optoelectronic unit 11.

[0035] The output end of the drive amplification module 20 is electrically connected to the first pole of the second optoelectronic unit 12, and the input end of the amplification equalization module 40 is electrically connected to the second pole of the second optoelectronic unit 12.

[0036] The output end of the bias voltage module 30 is used to output a first bias electrical signal, and the first bias electrical signal can be a DC bias voltage / current signal.

[0037] As Figure 4 shown, the bias voltage module 30 may include a voltage source or a current source, and the bias voltage module 30 may further include a current limiting circuit. The bias voltage module 30 can be selectively connected directly to a voltage source or a current source, or connected to a voltage source or a current source through a current limiting circuit according to the characteristics of the drive amplification module 20. By adjusting the DC bias voltage / current output by the bias voltage module 30 or the current limiting circuit, the emission brightness of the first optoelectronic unit 11 can be controlled.

[0038] The input end of the drive amplification module 20 is used to receive a modulation electrical signal or a control electrical signal. When a modulation electrical signal is received at the input end of the drive amplification module 20 (corresponding to the emission operating mode), the output end of the drive amplification module 20 is used to output an emission drive signal; when a control electrical signal is received at the input end of the drive amplification module 20 (corresponding to the reception operating mode), the output end of the drive amplification module 20 is used to output a second bias electrical signal, and the second bias electrical signal can be a DC bias voltage signal.

[0039] The driving and amplifying module 20 can output a certain voltage, output or absorb a certain current. In the transmitting operating mode, the amplitude of the voltage output by the driving and amplifying module 20, and the amplitude of the output or absorbed current are controlled by the amplitude of the input modulated electrical signal. In the receiving operating mode, the amplitude of the voltage output by the driving and amplifying module 20 is a preset fixed value, which is used to provide a stable bias for the second optoelectronic unit 12.

[0040] The driving and amplifying module 20 is the control switch for the second optoelectronic unit 12. As Figure 4 shown, in actual implementation, the driving and amplifying module 20 may include a driving amplifier 21 and a voltage source, and the driving amplifier 21 may be a triode.

[0041] The input end of the amplifying and equalizing module 40 is used to receive the photocurrent signal output by the second optoelectronic unit 12. The amplifying and equalizing module 40 is used to amplify and equalize the photocurrent signal and output it to the subsequent processing module for demodulation. As Figure 4 shown, in actual implementation, the amplifying and equalizing module 40 includes an amplifying and equalizing device 41.

[0042] As Figure 2 shown, the half-duplex optical transceiver device 100 has a transmitting operating mode. In the transmitting operating mode, the input end of the driving and amplifying module 20 is used to receive the modulated electrical signal, the output end of the driving and amplifying module 20 is used to output the driving electrical signal, and the bias voltage module 30 is used to output the first bias voltage signal.

[0043] In other words, in the transmitting operating mode, the driving and amplifying module 20 sends the transmitting driving electrical signal to the first optoelectronic unit 11 based on the received modulated electrical signal. The first optoelectronic unit 11 emits light based on the transmitting driving electrical signal and the first bias voltage signal output by the bias voltage module 30, thereby realizing the conversion of the electrical signal into the optical signal.

[0044] It should be noted that in the transmitting operating mode, the bias voltage module 30 can provide an appropriate bias for the first optoelectronic unit 11 to ensure that the first optoelectronic unit 11 can correctly emit an optical signal when receiving the transmitting driving signal.

[0045] As Figure 3 shown, the half-duplex optical transceiver device 100 has a receiving operating mode. In the receiving operating mode, the input end of the driving and amplifying module 20 is used to receive the control electrical signal, and the output end of the driving and amplifying module 20 is used to output the second bias voltage signal.

[0046] In other words, in the receiving operating mode, the driving and amplifying module 20 sends the second bias voltage signal to the second optoelectronic unit 12 based on the received control electrical signal. The second optoelectronic unit 12 outputs the optoelectrical signal to the amplifying and equalizing module 40 based on the received optical signal.

[0047] It can be understood that in the receiving working mode, the driving and amplifying module 20, the amplifying and equalizing module 40, and the second optoelectronic unit 12 are connected in series. Due to the isolation effect of the LED die in the first optoelectronic unit 11, the bias module 30 has basically no influence or interference on the light-sensitive device of the second optoelectronic unit 12.

[0048] Further, in the above receiving working mode, the driving and amplifying module 20 provides a second bias electrical signal (reverse bias voltage) for the second optoelectronic unit 12. This second bias electrical signal can ensure that the first optoelectronic unit 11 as a transmitter in the optical device transceiver module 10 is in a cut-off state and does not emit light due to the lack of sufficient forward voltage in the receiving mode, thereby eliminating the influence or interference on the second optoelectronic unit 12 as a light signal receiving element in the optical device transceiver module 10.

[0049] In summary, for the above half-duplex optical transceiver device 100, the same channel only includes two communication nodes. The above two communication nodes can only transmit data normally when one node is in the transmitting mode and the other node is in the receiving mode. When the two communication nodes are both in the transmitting mode or the receiving mode, they cannot transmit data normally; in order to ensure that the above two communication nodes can transmit data normally, the above two communication nodes are usually in the receiving mode and enter the transmitting mode respectively according to the time-division multiplexing method according to the agreed communication protocol to ensure reliable data transmission between the two communication nodes.

[0050] According to the half-duplex optical transceiver device 100 of the embodiment of the present invention, by designing a composite optical device transceiver module 10 and combining the driving and amplifying module 20, the bias module 30, and the amplifying and equalizing module 40 connected to each interface of the optical device transceiver module 10, the mutual conversion between optical and electrical signals can be realized, and the circuit structure of the entire half-duplex optical transceiver device 100 is simple, and the interference caused by the transmitting circuit to the receiving circuit can be effectively isolated.

[0051] In some embodiments, as Figure 1 shown, the optical device transceiver module 10 has a first pin 13, at least one second pin 14, and a third pin 15.

[0052] The first poles of the first optoelectronic unit 11 and the first poles of multiple second optoelectronic units 12 are all electrically connected to the first pin 13, and the first pin 13 is electrically connected to the output end of the driving and amplifying module 20; the second poles of the first optoelectronic unit 11 are all electrically connected to the corresponding second pins 14, and at least one second pin 14 is respectively electrically connected to the bias module 30; the second poles of the second optoelectronic units 12 are electrically connected to the third pin 15, and the third pin 15 is electrically connected to the amplifying and equalizing module 40.

[0053] In Figure 1In the illustrated embodiment, the first poles of the multiple first optoelectronic units 11 and the first poles of the multiple

[0054] second optoelectronic units 12 are all electrically connected to the first pin 13, and the first pin 13 is electrically connected to the output end of the drive amplification module 20; the second poles of the multiple first optoelectronic units 11 are all electrically connected to the corresponding second pins 14, and the multiple second pins 14 are respectively electrically connected to the bias voltage module 30; the second poles of the multiple second optoelectronic units 12 are all electrically connected to the third pin 15, and the third pin 15 is electrically connected to the amplification equalization module 40.

[0055] It can be understood that the optical device transceiver module 10 is formed by encapsulating one or more semiconductor optoelectronic units in combination. By setting the common pins, the number of electrical pins of the optical device transceiver module 10 can be reduced, which is convenient for the assembly and connection of the entire half-duplex optical transceiver device 100.

[0056] In some embodiments, the first optoelectronic unit 11 includes an LED die, and the second optoelectronic unit 12 includes a photosensitive device.

[0057] That is to say, the optical device transceiver module 10 of this embodiment uses the LED die as the electro-optical conversion element and the photosensitive device as the opto-electronic conversion element.

[0058] Among them, the LED die can select a red LED die with a wavelength of about 625 nm, a green LED die with a wavelength of about 525 nm, a blue LED die with a wavelength of about 470 nm, and other visible light wavelength LED dies or a combination of different visible light wavelength LED dies according to actual application needs.

[0059] The photosensitive device includes, but is not limited to, monomers or complexes of materials such as silicon (Si), gallium arsenide (GaAs), gallium arsenide phosphide (GaAsP), aluminum indium gallium phosphide / aluminum gallium indium phosphide (AlInGaP), etc., and is responsible for converting the received optical signal into an electrical signal. In actual implementation, the photosensitive device can be a silicon photovoltaic cell, a silicon photodiode, a silicon PIN photodiode, a silicon phototransistor, a silicon avalanche photodiode, and other photosensitive sensor devices of semiconductor material types, including but not limited to photovoltaic cells, photodiodes, phototransistors, and avalanche photodiodes.

[0060] In the embodiment of the common cathode connection method, the cathode of the LED die is the first pole of the corresponding first optoelectronic unit 11, and the anode of the LED die is the second pole of the corresponding first optoelectronic unit 11; the cathode of the photosensitive device is the first pole of the corresponding second optoelectronic unit 12, and the anode of the photosensitive device is the second pole of the corresponding second optoelectronic unit 12.

[0061] In this embodiment, the cathode of the LED die can be connected to the first pin 13, the anode of the LED die can be connected to the second pin 14, the cathode of the photosensitive device can be connected to the first pin 13, and the anode of the photosensitive device can be connected to the third pin 15.

[0062] In an embodiment of the common anode connection method, the anode of the LED die is the first pole of the corresponding first optoelectronic unit 11, and the cathode of the LED die is the second pole of the corresponding first optoelectronic unit 11; the anode of the photosensitive device is the first pole of the corresponding second optoelectronic unit 12, and the cathode of the photosensitive device is the second pole of the corresponding second optoelectronic unit 12.

[0063] In some other embodiments, as Figure 4 shown, the first optoelectronic unit 11 and the second optoelectronic unit 12 each include an LED die, wherein the LED die of the second optoelectronic unit utilizes its weak photosensitive property and is equivalent to a photosensitive device.

[0064] In other words, the first optoelectronic unit 11 is an LED die, and the second optoelectronic unit 12 is also an LED die. That is to say, the optical device transceiver module 10 of this embodiment uses the LED die as the electro-optical conversion element and the opto-electronic conversion element.

[0065] Among them, the LED die can be selected according to actual application needs, such as a red LED die with a wavelength of about 625 nm, a green LED die with a wavelength of about 525 nm, a blue LED die with a wavelength of about 470 nm, and other visible light wavelength LED dies or a combination of different visible light wavelength LED dies.

[0066] In an embodiment of the common cathode connection method, the cathode of the LED die is the first pole of the corresponding first optoelectronic unit 11 or the first pole of the second optoelectronic unit 12; the anode of the LED die is the second pole of the corresponding first optoelectronic unit 11 or the second pole of the second optoelectronic unit 12.

[0067] In this embodiment, the cathode of the LED die serving as the first optoelectronic unit 11 forms the first pole of the first optoelectronic unit 11, the anode of the LED die serving as the first optoelectronic unit 11 forms the second pole of the first optoelectronic unit 11, the cathode of the LED die serving as the second optoelectronic unit 12 forms the first pole of the second optoelectronic unit 12, and the anode of the LED die serving as the second optoelectronic unit 12 forms the second pole of the second optoelectronic unit 12.

[0068] In this embodiment, the cathodes of all the LED dies can be connected to the first pin 13, the anode of the LED die serving as the first optoelectronic unit 11 can be connected to the second pin 14, and the anode of the LED die serving as the second optoelectronic unit 12 can be connected to the third pin 15.

[0069] Of course, the multiple pins of the optical device transceiver module 10 can be adjusted according to actual needs in accordance with the common cathode connection method or the common anode connection method of the present invention.

[0070] The half-duplex optical transceiver method provided by the embodiments of the present invention will be described below. The half-duplex optical transceiver method described below can be correspondingly referred to the half-duplex optical transceiver device 100 described above, and the half-duplex optical transceiver method can be implemented using the above-mentioned half-duplex optical transceiver device 100.

[0071] The half-duplex optical transceiver method provided by the embodiments of the present invention includes: a half-duplex optical emission method and a half-duplex optical reception method.

[0072] Among them, the half-duplex optical emission method includes: the drive amplification module 20 outputs an emission drive electrical signal to the first pole of the first optoelectronic unit 11 based on the received modulated electrical signal, the bias module 30 outputs a first bias electrical signal to the second pole of the first optoelectronic unit 11, and the first optoelectronic unit 11 emits light based on the emission drive electrical signal and the first bias electrical signal.

[0073] The drive amplification module 20 sends an emission drive electrical signal to the first optoelectronic unit 11 based on the received modulated electrical signal, and the first optoelectronic unit 11 emits light based on the emission drive electrical signal and the first bias electrical signal output by the bias module 30, thereby realizing the conversion of electrical signals into optical signals. The drive amplification module 20 serves as a control switch for the first optoelectronic unit 11, and the bias module 30 can provide an appropriate bias for the first optoelectronic unit 11 and at the same time provide or absorb the current required to light up the first optoelectronic unit 11.

[0074] The half-duplex optical reception method includes: the drive amplification module 20 outputs a second bias electrical signal to the first pole of the second optoelectronic unit 12 based on the received control electrical signal, the second optoelectronic unit 12 outputs an optoelectrical signal to the amplification and equalization module 40 based on the second bias electrical signal and the received optical signal, and the amplification and equalization module 40 outputs a received signal based on the optoelectrical signal.

[0075] In the reception working mode, the drive amplification module 20 sends a second bias electrical signal to the second optoelectronic unit 12 based on the received control electrical signal, and the second optoelectronic unit 12 outputs an optoelectrical signal to the amplification and equalization module 40 based on the second bias electrical signal and the received optical signal.

[0076] According to the half-duplex optical transceiver method of the embodiments of the present invention, the mutual conversion between optoelectrical signals can be realized, and the interference caused by the emission circuit to the reception circuit can be effectively isolated.

[0077] The device embodiments described above are merely illustrative. The units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed to multiple network units. Some or all of the modules can be selected according to actual needs to achieve the purpose of the solution of this embodiment. Those of ordinary skill in the art can understand and implement it without creative work.

[0078] Through the description of the above embodiments, those skilled in the art can clearly understand that each embodiment can be implemented by means of software plus a necessary general hardware platform, and of course, it can also be implemented by hardware. Based on this understanding, the essence of the above technical solution, or the part that contributes to the prior art, can be embodied in the form of a software product. The computer software product can be stored in a computer-readable storage medium, such as ROM / RAM, magnetic disk, optical disk, etc., and includes several instructions to enable a computer device (which can be a personal computer, a server, or a network device, etc.) to execute the methods described in each embodiment or some parts of the embodiments.

[0079] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements for some of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A half-duplex optical transceiver device, characterized in that, Comprising: An optical device transceiver module, the optical device transceiver module including at least one first optoelectronic unit for converting an electrical signal into an optical signal and at least one second optoelectronic unit for converting an optical signal into an electrical signal; A drive amplification module, an output end of the drive amplification module being electrically connected to a first pole of the first optoelectronic unit and a first pole of the second optoelectronic unit; A bias module, an output end of the bias module being electrically connected to a second pole of the first optoelectronic unit; An amplification equalization module, an input end of the amplification equalization module being electrically connected to a second pole of the second optoelectronic unit; The half-duplex optical transceiver device has a transmission operating mode, in the transmission operating mode, an input end of the drive amplification module is used for receiving a modulated electrical signal, an output end of the drive amplification module is used for outputting a drive electrical signal, and the bias module is used for outputting a first bias electrical signal; The half-duplex optical transceiver device has a reception operating mode, in the reception operating mode, an input end of the drive amplification module is used for receiving a control electrical signal, and an output end of the drive amplification module is used for outputting a second bias electrical signal; The first optoelectronic unit includes an LED die; the second optoelectronic unit includes a photosensitive device, and the photosensitive device is a photosensitive sensor device of a semiconductor material type; The half-duplex optical transceiver device and another communication node communicating with the half-duplex optical transceiver device respectively enter a transmission and a reception operating mode according to a time-division multiplexing manner according to a predefined communication protocol; The optical device transceiver module has a first pin, at least one second pin, and a third pin; The first pole of the first optoelectronic unit and the first pole of the second optoelectronic unit are both electrically connected to the first pin, and the first pin is electrically connected to an output end of the drive amplification module; The second pole of the first optoelectronic unit is electrically connected to the corresponding second pin, and the at least one second pin is respectively electrically connected to the bias module; The second pole of the second optoelectronic unit is electrically connected to the third pin, and the third pin is electrically connected to the amplification equalization module.

2. The half-duplex optical transceiver device according to claim 1, wherein The cathode of the LED die is the first pole of the corresponding first optoelectronic unit, and the anode of the LED die is the second pole of the corresponding first optoelectronic unit; the cathode of the photosensitive device is the first pole of the corresponding second optoelectronic unit, and the anode of the photosensitive device is the second pole of the corresponding second optoelectronic unit.

3. The half-duplex optical transceiver device according to claim 1, wherein The anode of the LED die is the first pole of the corresponding first optoelectronic unit, and the cathode of the LED die is the second pole of the corresponding first optoelectronic unit; the anode of the photosensitive device is the first pole of the corresponding second optoelectronic unit, and the cathode of the photosensitive device is the second pole of the corresponding second optoelectronic unit.

4. A half-duplex optical transceiver method for the half-duplex optical transceiver device according to any one of claims 1-3, characterized in that, Comprising: A half-duplex optical transmission method and a half-duplex optical reception method; The half-duplex optical emission method includes: the drive amplification module outputs an emission drive electrical signal to a first pole of a first optoelectronic unit based on a received modulated electrical signal, the bias module outputs a first bias electrical signal to a second pole of the first optoelectronic unit, and the first optoelectronic unit emits light based on the emission drive electrical signal and the first bias electrical signal; in the emission operating mode, the input end of the drive amplification module is used to receive the modulated electrical signal, the output end of the drive amplification module is used to output the drive electrical signal, and the bias module is used to output the first bias electrical signal; The half-duplex optical reception method includes: the drive amplification module outputs a second bias electrical signal to a first pole of a second optoelectronic unit based on a received control electrical signal, the second optoelectronic unit outputs a photoelectric signal to the amplification and equalization module based on the second bias electrical signal and the received optical signal, and the amplification and equalization module outputs a received signal based on the photoelectric signal; in the reception operating mode, the input end of the drive amplification module is used to receive the control electrical signal, and the output end of the drive amplification module is used to output the second bias electrical signal; The first optoelectronic unit includes an LED die; the second optoelectronic unit includes a photosensitive device, and the photosensitive device is a photosensitive sensor device of a semiconductor material type; The half-duplex optical transceiver device and another communication node communicating with the half-duplex optical transceiver device respectively enter the emission and reception operating modes according to a time-division multiplexing manner based on a predefined communication protocol; The optical device transceiver module has a first pin, at least one second pin, and a third pin; The first pole of the first optoelectronic unit and the first pole of the second optoelectronic unit are both electrically connected to the first pin, and the first pin is electrically connected to the output end of the drive amplification module; The second pole of the first optoelectronic unit is electrically connected to the corresponding second pin, and the at least one second pin is respectively electrically connected to the bias module; The second pole of the second optoelectronic unit is electrically connected to the third pin, and the third pin is electrically connected to the amplification and equalization module.

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