Design of bridge arm unit of a power semiconductor module

Abstract

The present invention discloses a bridge arm unit design of a power semiconductor module, which is characterized in that it comprises an upper bridge arm unit, a lower bridge arm unit, a connecting device and a substrate, wherein the upper bridge arm unit and the lower bridge arm unit are arranged on the substrate, and the upper bridge arm unit and the lower bridge arm unit are arranged symmetrically; by adopting the bridge arm unit design of the power semiconductor module of the present invention, the gate signal terminal is arranged at a symmetrical center position, thereby achieving the balance of the control loop stray parameters when multiple chips are connected in parallel, and effectively reducing the absolute value of the stray parameters.

Description

Technical Field

[0001] The invention relates to power semiconductors, and in particular to a bridge arm unit design of a power semiconductor module. Background Art

[0002] At present, power semiconductor modules usually use multi-chip parallel connection to improve power output capacity. The consistency of switching characteristics between parallel chips is directly related to the operating stability of power semiconductor modules. The switching characteristics of power semiconductor chips used in parallel are mainly determined by the voltage between their control electrode and source electrode. In the equivalent circuit model of the internal drive circuit of the three-chip parallel module, the voltage across capacitors Cgs1, Cgs2 and Cgs3 can be used to represent it. Tg and Ts are the connection terminals between the power semiconductor module and the external drive circuit, namely the gate signal terminal and the source signal terminal. Rg0 and Lg0 are the stray resistance and stray inductance of the common part of the three-chip drive circuit. Rg1 and Lg1, Rg2 and Lg2, and Rg3 and Lg3 are the stray resistance and stray inductance of the independent parts of the three-chip drive circuit. The above stray parameters are determined by the arrangement of the drive path and signal terminals inside the module. When designing the power module substrate, in order to ensure that the voltage between the control electrodes of the parallel chips is consistent and has a high response speed to the drive signal, the drive path and signal terminals need to be optimized to make the stray parameters of the common part of the drive circuit as small as possible and the stray parameters of the independent part as balanced as possible.

[0003] In view of the problems existing in the prior art, it is of great significance to provide a bridge arm unit design of a power semiconductor module. Summary of the invention

[0004] In order to solve the above problems, the present invention provides a bridge arm unit design of a power semiconductor module.

[0005] To achieve the above-mentioned purpose, the bridge arm unit design of the power semiconductor module of the present invention includes an upper bridge arm unit, a lower bridge arm unit, a connecting device and a substrate, wherein the upper bridge arm unit and the lower bridge arm unit are arranged on the substrate, and the upper bridge arm unit and the lower bridge arm unit are arranged symmetrically; the upper bridge arm unit includes a first source signal terminal, a first gate signal terminal, a first power metal cladding and a first auxiliary metal cladding, the first auxiliary metal cladding and the first source signal terminal are arranged on the first power metal cladding, the first auxiliary metal cladding is arranged at the center of the upper bridge arm unit, the first auxiliary metal cladding is provided with a first protruding structure, and the first The source signal terminal is arranged at a side away from the first protruding structure, and the first gate signal terminal is arranged on the first auxiliary metal cladding; the lower bridge arm unit comprises a second source signal terminal, a second gate signal terminal, a second power metal cladding and a second auxiliary metal cladding, the second auxiliary metal cladding and the second source signal terminal are arranged on the second power metal cladding, the second auxiliary metal cladding is arranged at the center of the lower bridge arm unit, the second auxiliary metal cladding is provided with a second protruding structure, the second source signal terminal is arranged at a side away from the second protruding structure, and the second gate signal terminal is arranged on the second auxiliary metal cladding;

[0006] Further, the upper bridge arm unit further includes a third source signal terminal, and the third source signal terminal is arranged on a side close to the first protruding structure; the lower bridge arm unit further includes a fourth source signal terminal symmetrical to the third source signal terminal, and the fourth source signal terminal is arranged on a side close to the second protruding structure;

[0007] Further, the first protruding structure of the first auxiliary metal cladding layer protrudes toward the bottom direction of the substrate, and the second protruding structure of the second auxiliary metal cladding layer protrudes toward the top direction of the substrate;

[0008] Further, the first protruding structure of the first auxiliary metal cladding layer protrudes toward the top direction of the substrate, and the second protruding structure of the second auxiliary metal cladding layer protrudes toward the bottom direction of the substrate;

[0009] Further, the upper bridge arm unit further includes a third power metal cladding, a fourth power metal cladding, a third auxiliary metal cladding and a fourth auxiliary metal cladding, the third auxiliary metal cladding and the fourth auxiliary metal cladding are respectively arranged on the left and right sides of the upper bridge arm unit, the third auxiliary metal cladding is arranged between the third power metal cladding and the first power metal cladding, and the fourth auxiliary metal cladding is arranged between the fourth power metal cladding and the first power metal cladding; the lower bridge arm unit further includes a fifth power metal cladding, a sixth power metal cladding, a fifth auxiliary metal cladding and a sixth auxiliary metal cladding which are symmetrical with the upper bridge arm unit, the fifth auxiliary metal cladding and the sixth auxiliary metal cladding are respectively arranged on the left and right sides of the lower bridge arm unit, the fifth auxiliary metal cladding is arranged between the fifth power metal cladding and the second power metal cladding, and the sixth auxiliary metal cladding is arranged between the sixth power metal cladding and the second power metal cladding;

[0010] Furthermore, the same number of power semiconductor chips are arranged on the third power metal cladding layer, the fourth power metal cladding layer, the fifth power metal cladding layer and the sixth power metal cladding layer, and connecting devices are arranged on the upper surfaces of the semiconductor chips to realize electrical connection between the semiconductor chips and adjacent power metal cladding layers, and the lengths of the connecting devices of different chips are inconsistent;

[0011] Furthermore, an AC terminal connection is also provided on the top of the substrate;

[0012] Furthermore, the bottom of the substrate is also provided with a positive terminal connection and a negative terminal connection;

[0013] Furthermore, a first auxiliary connecting device is provided on the first protruding structure, and the first auxiliary connecting device is connected to the third auxiliary metal cladding and the fourth auxiliary metal cladding; a second auxiliary connecting device is provided on the second protruding structure, and the second auxiliary connecting device is connected to the fifth auxiliary metal cladding and the sixth auxiliary metal cladding.

[0014] A bridge arm unit design of a power semiconductor module of the present invention arranges the gate signal terminal at a symmetrical center position, thereby achieving balance of control loop stray parameters when multiple chips are connected in parallel, effectively reducing the absolute value of the stray parameters, and achieving reduction and balance of the stray parameters. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 A first structural schematic diagram of a bridge arm unit design of a power semiconductor module according to the present invention;

[0016] Figure 2 A second structural schematic diagram of a bridge arm unit designed for the power semiconductor module of the present invention;

[0017] Figure 3 A third structural schematic diagram of the bridge arm unit design of the power semiconductor module of the present invention. DETAILED DESCRIPTION

[0018] The structure and working principle of the present invention are further described below in conjunction with the accompanying drawings.

[0019] like Figure 1 As shown, Figure 1The first structural schematic diagram of the bridge arm unit of the power semiconductor module of the present invention comprises an upper bridge arm unit 1, a lower bridge arm unit 2, a connecting device 31 and a substrate 3, wherein the upper bridge arm unit 1 and the lower bridge arm unit 2 are arranged on the substrate 3, and the upper bridge arm unit 1 and the lower bridge arm unit 2 are arranged symmetrically; the upper bridge arm unit 1 comprises a first source signal terminal 11, a first gate signal terminal 12, a first power metal cladding 14 and a first auxiliary metal cladding 13, wherein the first auxiliary metal cladding 13 is isolated from the first power metal cladding 14, and the first auxiliary metal cladding 13 and the first source signal terminal 11 are arranged on the first power metal cladding 1 4, the first auxiliary metal cladding 13 is arranged at the center of the upper bridge arm unit 1, the first auxiliary metal cladding 13 is provided with a first protruding structure, the first protruding structure of the first auxiliary metal cladding 13 is protruding toward the bottom direction of the substrate 3, the first source signal terminal 11 is arranged on a side away from the first protruding structure, and the first gate signal terminal 12 is arranged on the first auxiliary metal cladding 13; the first protruding structure of the first auxiliary metal cladding 13 is provided with a first auxiliary connecting device connected to the third auxiliary metal cladding 15 and the fourth auxiliary metal cladding 17, and the landing point of the first auxiliary connecting device is located at the third auxiliary metal cladding 15 and the middle position of the fourth auxiliary metal cladding 17, the electrical connection between the first auxiliary metal cladding 13 and the third auxiliary metal cladding 15 and the fourth auxiliary metal cladding 17 is realized with low stray parameters; the lower bridge arm unit 2 includes a second source signal terminal 21, a second gate signal terminal 23, a second power metal cladding 24 and a second auxiliary metal cladding 22, the second auxiliary metal cladding 22 and the second source signal terminal 21 are arranged on the second power metal cladding 24, the second auxiliary metal cladding 22 is arranged at the center position of the lower bridge arm unit 2, the second auxiliary metal cladding 22 is provided with a second protruding structure, and the second auxiliary metal cladding 22 The second protruding structure protrudes toward the top of the substrate 3, the second source signal terminal 21 is arranged on the side away from the second protruding structure, and the second gate signal terminal 21 is arranged on the second auxiliary metal cladding 22; a second auxiliary connecting device is arranged at the protruding position of the second auxiliary metal cladding 22 to connect the fifth auxiliary metal cladding 25 and the sixth auxiliary metal cladding 27, and the landing point of the second auxiliary connecting device is located in the middle position of the fifth auxiliary metal cladding 25 and the sixth auxiliary metal cladding 27, so that the electrical connection between the second auxiliary metal cladding 22 and the fifth auxiliary metal cladding 25 and the sixth auxiliary metal cladding 27 is realized with low stray parameters.

[0020] The bridge arm unit design of the power semiconductor module also includes a connecting metal cladding 32, and the connecting connection device 31 is arranged on the connecting metal cladding 32; the upper bridge arm unit 1 also includes a third power metal cladding 16, a fourth power metal cladding 18, a third auxiliary metal cladding 15 and a fourth auxiliary metal cladding 17, the third auxiliary metal cladding 15 and the fourth auxiliary metal cladding 17 are respectively arranged on the left and right sides of the upper bridge arm unit 1, the third auxiliary metal cladding 15 is arranged between the third power metal cladding 16 and the first power metal cladding 14, and the fourth auxiliary metal cladding 17 is arranged between the third power metal cladding 16 and the first power metal cladding 14. The metal cladding 17 is arranged between the fourth power metal cladding 18 and the first power metal cladding 14; the lower bridge arm unit 2 also includes a fifth power metal cladding 26, a sixth power metal cladding 28, a fifth auxiliary metal cladding 25 and a sixth auxiliary metal cladding 27 which are symmetrical with the upper bridge arm unit, the fifth auxiliary metal cladding 25 and the sixth auxiliary metal cladding 27 are arranged on the left and right sides of the lower bridge arm unit 2 respectively, the fifth auxiliary metal cladding 25 is arranged between the fifth power metal cladding 26 and the second power metal cladding 24, and the sixth auxiliary metal cladding 27 is arranged on the left and right sides of the lower bridge arm unit 2 respectively. The sixth power metal cladding 28 and the second power metal cladding 24 are provided between the sixth power metal cladding 28 and the second power metal cladding 24; the top of the substrate 3 is also provided with an AC terminal connection 8; the bottom of the substrate 3 is also provided with a positive terminal connection 10 and a negative terminal connection 9; on the left and right sides of the upper bridge arm unit 1 and the lower bridge arm unit 2, a plurality of pairs of power connection devices 7 are respectively provided, and a power switch 6 is provided on the power connection device 7, and a plurality of power switches are provided on the third power metal cladding 16, the fourth power metal cladding 18, the fifth power metal cladding 26 and the sixth power metal cladding 28. Switch 6, the upper bridge arm power switch connects the power switch 6 and the first power metal cladding 14 through a plurality of power connection devices, the upper bridge arm power switch connects the power switch 6 control electrode and the third auxiliary metal cladding 15 and the fourth auxiliary metal cladding 17 through a plurality of auxiliary connection devices, the lower bridge arm power switch connects the power switch 6 and the second power metal cladding 24 through a plurality of power connection devices, and the lower bridge arm power switch connects the power switch 6 control electrode and the fifth auxiliary auxiliary metal cladding 25 and the sixth auxiliary metal cladding 27 through a plurality of auxiliary connection devices.

[0021] The bridge arm unit of the power semiconductor module of the present invention is designed with the same number of power semiconductor chips arranged on the third power metal cladding 15, the fourth power metal cladding 17, the fifth power metal cladding 26 and the sixth power metal cladding 27, and a connecting device is arranged on the upper surface of the semiconductor chip to realize the electrical connection between the semiconductor chip and the adjacent power metal cladding, and the lengths of the connecting devices of different chips are inconsistent.

[0022] In a preferred embodiment of the present invention, there are four AC terminal connections, four negative terminal connections, the negative terminal connection is arranged in the middle position of the bottom of the lower bridge arm unit, and there are two positive terminal connections on the left and right sides; four power switches are arranged on the left and right sides of the upper bridge arm unit and the lower bridge arm unit, for a total of sixteen, and each power switch is provided with a power connection device.

[0023] like Figure 2 As shown, Figure 2 A second structural schematic diagram of the bridge arm unit design of the power semiconductor module of the present invention. In a preferred embodiment of the present invention, the upper bridge arm unit also includes a third source signal terminal 19, and the third source signal terminal 19 is arranged on a side close to the first protruding structure; the lower bridge arm unit also includes a fourth source signal terminal 29 symmetrical to the third source signal terminal, and the fourth source signal terminal 29 is arranged on a side close to the second protruding structure.

[0024] like Figure 3 As shown, Figure 3 A third structural schematic diagram of the bridge arm unit of the power semiconductor module of the present invention. In another preferred embodiment of the present invention, the first auxiliary metal cladding is provided with a first protruding structure, the first protruding structure of the first auxiliary metal cladding is protruding toward the top direction of the substrate 3, the first source signal terminal is provided on a side away from the first protruding structure, and the first gate signal terminal is provided on the first auxiliary metal cladding; a first auxiliary connecting device is provided on the protruding structure to connect the first auxiliary metal cladding, the third metal cladding and the fourth auxiliary metal cladding, and the first auxiliary connecting device is provided according to Figure 3 The lower bridge arm unit 2 includes a second source signal terminal, a second gate signal terminal, a second power metal cladding and a second auxiliary metal cladding, the second auxiliary metal cladding and the second source signal terminal are arranged on the second power metal cladding, the second auxiliary metal cladding is arranged at the center of the lower bridge arm unit, the second auxiliary metal cladding is provided with a second protruding structure, the second protruding structure of the second auxiliary metal cladding is protruding toward the bottom direction of the substrate 3, the second source signal terminal is arranged on the side away from the second protruding structure, and the second gate signal terminal is arranged on the second auxiliary metal cladding; the second protruding structure is provided with a second auxiliary connecting device to connect the second auxiliary metal cladding, the fifth auxiliary metal cladding and the sixth auxiliary metal cladding, and the second auxiliary connecting device is arranged according to Figure 3The control signal transmission between the second auxiliary metal cladding and the fifth auxiliary metal cladding and the sixth auxiliary metal cladding is realized by horizontal setting with low stray parameters.

[0025] In a preferred embodiment of the present invention, the material of the power connection device can be a binding wire, a strip, etc. made of aluminum, copper, etc.; the power switch is composed of power semiconductor chips, and the power semiconductor chips constituting the power switch are arranged in parallel in a row, and the auxiliary metal coating extends parallel to the chip arrangement direction to the corresponding position of the chip control electrode, and the same number of control electrode auxiliary metal coatings as the number of chips can be arranged between the auxiliary metal coating and the power metal coating. The signal connection device connects the chip control electrode and the control electrode auxiliary metal coating in parallel with the shortest distance, and the control electrode auxiliary metal coatings are connected to the auxiliary metal coatings through passive components such as resistors, capacitors, and inductors. The power semiconductor chips include diodes, JFETs, MOSFETs, IGBTs, and other devices made of semiconductor materials such as silicon, silicon carbide, and gallium nitride.

[0026] The above is only an illustrative description of the present invention. Those skilled in the art should know that various improvements can be made to the present invention without departing from the working principle of the present invention, which all fall within the protection scope of the present invention.

Claims

1. A bridge arm unit design of a power semiconductor module, characterized in that: It includes an upper bridge arm unit, a lower bridge arm unit, a connecting device and a substrate, wherein the upper bridge arm unit and the lower bridge arm unit are arranged on the substrate, the upper bridge arm unit and the lower bridge arm unit are arranged symmetrically, and a plurality of pairs of power connecting devices are arranged on the left and right sides of the upper bridge arm unit and the lower bridge arm unit, respectively, and a power switch is arranged on the power connecting device; The upper bridge arm unit comprises a first source signal terminal, a first gate signal terminal, a first power metal cladding and a first auxiliary metal cladding, the first auxiliary metal cladding and the first source signal terminal are arranged on the first power metal cladding, the first auxiliary metal cladding is arranged at the center of the upper bridge arm unit, the first auxiliary metal cladding is provided with a first protruding structure, the first source signal terminal is arranged on a side away from the first protruding structure, and the first gate signal terminal is arranged on the first auxiliary metal cladding; The lower bridge arm unit includes a second source signal terminal, a second gate signal terminal, a second power metal cladding and a second auxiliary metal cladding, the second auxiliary metal cladding and the second source signal terminal are arranged on the second power metal cladding, the second auxiliary metal cladding is arranged at the center position of the lower bridge arm unit, the second auxiliary metal cladding is provided with a second protruding structure, the second source signal terminal is arranged on a side away from the second protruding structure, and the second gate signal terminal is arranged on the second auxiliary metal cladding.

2. The bridge arm unit design of the power semiconductor module according to claim 1, characterized in that: The upper bridge arm unit also includes a third source signal terminal, which is arranged on a side close to the first protruding structure; the lower bridge arm unit also includes a fourth source signal terminal symmetrical to the third source signal terminal, which is arranged on a side close to the second protruding structure.

3. The bridge arm unit design of the power semiconductor module according to claim 1, characterized in that: The first protruding structure of the first auxiliary metal cladding layer protrudes toward the bottom of the substrate, and the second protruding structure of the second auxiliary metal cladding layer protrudes toward the top of the substrate.

4. The bridge arm unit design of the power semiconductor module according to claim 1, characterized in that: The first protruding structure of the first auxiliary metal cladding layer protrudes toward the top of the substrate, and the second protruding structure of the second auxiliary metal cladding layer protrudes toward the bottom of the substrate.

5. The bridge arm unit design of the power semiconductor module according to claim 1, characterized in that: It also includes a connecting metal coating, and the connecting connection device is arranged on the connecting metal coating.

6. The bridge arm unit design of the power semiconductor module according to claim 1, characterized in that: The upper bridge arm unit further includes a third power metal cladding, a fourth power metal cladding, a third auxiliary metal cladding and a fourth auxiliary metal cladding, wherein the third auxiliary metal cladding and the fourth auxiliary metal cladding are respectively arranged on the left and right sides of the upper bridge arm unit, the third auxiliary metal cladding is arranged between the third power metal cladding and the first power metal cladding, and the fourth auxiliary metal cladding is arranged between the fourth power metal cladding and the first power metal cladding; The lower bridge arm unit also includes a fifth power metal cladding, a sixth power metal cladding, a fifth auxiliary metal cladding and a sixth auxiliary metal cladding which are symmetrical with the upper bridge arm unit. The fifth auxiliary metal cladding and the sixth auxiliary metal cladding are respectively arranged on the left and right sides of the lower bridge arm unit, the fifth auxiliary metal cladding is arranged between the fifth power metal cladding and the second power metal cladding, and the sixth auxiliary metal cladding is arranged between the sixth power metal cladding and the second power metal cladding.

7. The bridge arm unit design of the power semiconductor module according to claim 1, characterized in that: The same number of power semiconductor chips are arranged on the third power metal cladding layer, the fourth power metal cladding layer, the fifth power metal cladding layer and the sixth power metal cladding layer. Connecting devices are arranged on the upper surfaces of the semiconductor chips to realize electrical connection between the semiconductor chips and adjacent power metal cladding layers. The lengths of the connecting devices of different chips are inconsistent.

8. The bridge arm unit design of the power semiconductor module according to claim 1, characterized in that: An AC terminal connection is also provided on the top of the substrate.

9. The bridge arm unit design of the power semiconductor module according to claim 1, characterized in that: The bottom of the substrate is also provided with a positive terminal connection and a negative terminal connection.

10. The bridge arm unit design of the power semiconductor module according to claim 6, characterized in that: A first auxiliary connecting device is provided on the first protruding structure, and the first auxiliary connecting device is connected to the third auxiliary metal cladding and the fourth auxiliary metal cladding; a second auxiliary connecting device is provided on the second protruding structure, and the second auxiliary connecting device is connected to the fifth auxiliary metal cladding and the sixth auxiliary metal cladding.

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