Dry cleaning equipment and dry cleaning method

Abstract

A dry cleaning apparatus includes: a chamber; a substrate support member that supports a substrate in the chamber; a shower head arranged at an upper portion of the chamber to supply a dry cleaning gas toward the substrate, the shower head including an optical window that transmits laser light toward the substrate support member; a plasma generator configured to generate plasma from the dry cleaning gas; and a laser irradiator that irradiates a laser onto the substrate through the optical window and the plasma, thereby heating the substrate.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority from Korean Patent Application No. 10-2018-0107944 filed on September 10, 2018, in the Korean Intellectual Property Office (KIPO), the entire contents of which are incorporated herein by reference. Technical Field

[0003] Example embodiments relate to a dry cleaning apparatus and a dry cleaning method. More particularly, example embodiments relate to a dry cleaning apparatus for performing a dry cleaning process using a dry cleaning gas in a plasma state and a dry cleaning method using the dry cleaning apparatus. Background Art

[0004] Even with miniaturization and increased aspect ratios of patterns, dry cleaning processes can completely remove target materials. However, at room temperature, the chemical reaction rate of dry cleaning gases in a vapor or gas phase can decrease, reducing productivity. Summary of the Invention

[0005] According to an exemplary embodiment of the present inventive concept, a dry cleaning apparatus includes: a chamber; a substrate support supporting a substrate in the chamber; a shower head arranged at an upper portion of the chamber to supply a dry cleaning gas toward the substrate, the shower head including an optical window transmitting a laser in a direction toward the substrate support; a plasma generator configured to generate plasma from the dry cleaning gas; and a laser irradiator irradiating a laser onto the substrate through the optical window, thereby heating the substrate.

[0006] According to an exemplary embodiment of the present inventive concept, a dry cleaning apparatus includes: a chamber having an optical window; a substrate support configured to support a substrate in the chamber; a shower head arranged at an upper portion of the chamber to supply a dry cleaning gas toward the substrate; a plasma generator configured to generate plasma from the dry cleaning gas; and a laser irradiator configured to irradiate a laser on the substrate through the optical window and the plasma, thereby heating the substrate.

[0007] According to an exemplary embodiment of the present inventive concept, a dry cleaning method is provided as follows. A substrate is loaded into a chamber. A dry cleaning gas is supplied into the chamber through a showerhead. Plasma is generated from the dry cleaning gas. Cleaning process byproducts are formed by reacting the plasma with etching residues on the substrate. A laser is irradiated onto a surface of the substrate to heat the substrate, thereby converting the cleaning process byproducts into gaseous cleaning process byproducts. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Exemplary embodiments will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings.Figures 1 to 34 represents non-limiting example embodiments described herein.

[0009] Figure 1 is a block diagram illustrating a dry cleaning apparatus according to example embodiments.

[0010] Figure 2 It shows Figure 1 A plan view of the nozzle of the dry cleaning equipment.

[0011] Figure 3 It is along Figure 2 A cross-sectional view taken along line AA′ in FIG.

[0012] Figure 4 It shows Figure 1 View of the laser irradiator in a dry cleaning device.

[0013] Figure 5 It is shown by Figure 4 A view of the laser irradiating from the laser irradiator.

[0014] Figure 6 is shown in Figure 4 A graph showing the absorption rate of laser light when the laser irradiator in FIG. 5 irradiates the wafer with laser light.

[0015] Figure 7 is a block diagram illustrating a dry cleaning apparatus according to example embodiments.

[0016] Figure 8 It shows Figure 7 A cross-sectional view of the nozzle of a dry cleaning device.

[0017] Figure 9 is a view illustrating a laser irradiator of a dry cleaning apparatus according to example embodiments.

[0018] Figure 10 It shows Figure 9 Plan view of the optical mask in the laser illuminator.

[0019] Figure 11 It is shown by Figure 9 A perspective view of a laser irradiator irradiating a wafer with laser light.

[0020] Figure 12 is a view illustrating an optical mask of a laser irradiator according to example embodiments.

[0021] Figure 13 It is shown by Figure 12 A perspective view of a laser irradiator irradiating a wafer with laser light.

[0022] Figure 14is a flowchart illustrating a dry cleaning method according to example embodiments.

[0023] Figures 15 to 17 is a cross-sectional view illustrating a method of forming a pattern of a semiconductor device according to example embodiments.

[0024] Figures 18 to 27 are plan views and cross-sectional views illustrating stages of a method of fabricating a semiconductor device according to example embodiments.

[0025] Figures 28 to 34 is a cross-sectional view illustrating a method of manufacturing a semiconductor device according to example embodiments. DETAILED DESCRIPTION

[0026] Hereinafter, example embodiments will be described in detail with reference to the accompanying drawings.

[0027] Figure 1 is a block diagram illustrating a dry cleaning apparatus according to example embodiments. Figure 2 It shows Figure 1 A plan view of the nozzle of the dry cleaning equipment. Figure 3 It is along Figure 2 A cross-sectional view taken along line AA′ in FIG. Figure 4 It shows Figure 1 View of the laser irradiator in a dry cleaning device. Figure 5 It is shown by Figure 4 A view of the laser irradiating from the laser irradiator. Figure 6 is shown in Figure 4 A graph showing the absorption rate of laser light when the laser irradiator in FIG. 5 irradiates the wafer with laser light.

[0028] Reference Figures 1 to 6 The dry cleaning apparatus 10 may include a chamber 20, a substrate support 30, a shower head, a plasma generator, and a laser irradiator 100. The plasma generator may include a lower electrode 34, an upper electrode (e.g., 40 or 46, which will be described in more detail below), and a power supply 60. In addition, the dry cleaning apparatus 10 may further include an exhaust unit, etc.

[0029] In an exemplary embodiment, the dry cleaning apparatus 10 may be an apparatus configured to dry-clean a material on a substrate, such as a semiconductor wafer W disposed within a capacitively coupled plasma (CCP) chamber. However, the plasma generated by the dry cleaning apparatus is not limited to capacitively coupled plasma. For example, the plasma may be inductively coupled plasma, microwave plasma, or the like. Here, the substrate may include a semiconductor substrate, a glass substrate, or the like.

[0030] A substrate support 30 may be provided within the chamber 20 to support a substrate. For example, the substrate support 30 may serve as a susceptor for supporting a wafer W thereon. The substrate support 30 may include a support plate 32 having an electrostatic electrode configured to hold the wafer W thereon using an electrostatic force.

[0031] The substrate support 30 may include a lower electrode 34 in a support plate 32. For example, the lower electrode 34 may be in the shape of a circular plate. The substrate support 30 may be mounted to move up and down via a driving portion (not shown). The substrate support 30 may also include a focus ring 36 positioned on the support plate 32 to surround the wafer W. The focus ring 36 may have an annular shape.

[0032] A door (not shown) for loading / unloading the wafer W may be provided in a sidewall of the chamber 20. The wafer W may be loaded / unloaded onto / from the substrate support 30 through the door.

[0033] The exhaust unit can be connected to an exhaust port 24 via an exhaust line, and the exhaust port 24 is installed at the bottom of the chamber 20. The exhaust unit can include a vacuum pump (e.g., a turbomolecular pump, etc.) to control the pressure of the chamber 20 so that the processing space within the chamber 20 can be depressurized to a desired vacuum level. In addition, cleaning process byproducts and residual process gases can be exhausted from the chamber 20 through the exhaust port 24.

[0034] A showerhead may be provided as at least a portion of a vacuum lid assembly that covers an opening in an upper portion of the chamber 20. The showerhead may be installed in the upper portion of the chamber 20 to supply a dry cleaning gas into the chamber 20. The showerhead may include a manifold 40 having injection holes 41 formed therein and a showerhead plate 42 serving as a baffle. The manifold 40 having the injection holes 41 may serve as a gas inlet for the chamber 20. For example, the dry cleaning gas may be supplied to the wafer within the chamber 20 through the injection holes 41 of the manifold 40.

[0035] The upper electrode may be provided as part of the showerhead. For example, the upper electrode may be supported on an upper portion of the chamber 20 by an insulating shielding member (not shown). The upper electrode may be arranged above the substrate support 30 so as to face the lower electrode 34. The space between the upper electrode and the lower electrode 34 may be used as a plasma generation region. The upper electrode may have a surface facing the wafer W placed on the substrate support 30.

[0036] The upper electrode may include an electrode plate having a ring shape. The manifold 40 may include a plurality of injection holes 41 formed therethrough to supply the dry cleaning gas into the chamber 20 .

[0037] In particular, the nozzle plate 42 serving as a baffle may include a ring-shaped plate. The nozzle plate 42 may support the manifold 40 and may diffuse and eject the dry cleaning gas through the injection holes 41 of the manifold 40. The nozzle plate 42 may include a gas diffusion chamber 44 therein, and the gas diffusion chamber 44 may be connected to the injection holes 41. The manifold 40 may be detachably mounted in the lower surface of the nozzle plate 42. The nozzle plate 42 may include, for example, stainless steel, aluminum, anodized aluminum, nickel, or ceramic. The manifold 40 may include stainless steel, aluminum, anodized aluminum, nickel, or ceramic serving as an upper electrode. Alternatively, the nozzle plate 42 may include a conductive material serving as an upper electrode.

[0038] The dry cleaning apparatus 10 may further include a gas supply unit for supplying a dry cleaning gas into the chamber 20. For example, the gas supply unit may include a gas supply line 70, a flow controller 72, and a gas supply source 74, such as a gas supply element. The gas supply line 70 may be connected to the gas diffusion chamber 44 of the showerhead plate 42, and the flow controller 72 may control the amount of dry cleaning gas supplied into the chamber 20 through the gas supply line 70. For example, the gas supply source 74 may include a plurality of gas tanks, and the flow controller 72 may include a plurality of mass flow controllers (MFCs), and the plurality of MFCs may independently control the supply amount of the dry cleaning gas supplied from the gas supply source 74. The dry cleaning gas may include F2, NH3, HF3, CH4, O3, etc.

[0039] Alternatively, the gas supply unit may include a remote plasma source that generates ions, atoms, free radicals, and plasma species. The plasma species may be generated outside the chamber 20 and may be supplied to the chamber 20 from the gas supply unit via a showerhead. The remote plasma source may receive plasma gas and may generate plasma species such as free radicals, ions, atoms, and the like. The remote plasma source may be a plasma source type such as a microwave, an electron cyclotron resonance plasma source, and the like.

[0040] As described later, plasma can be generated from the dry cleaning gas by the power supply 60. Chemical species that do not absorb or hardly absorb the laser light L emitted through the optical window 50 can be selected as the dry cleaning gas so that the energy of the laser light L can be transferred to the wafer W without loss.

[0041] The power supply 60 of the plasma generator may include a first power supply and a second power supply. The first power supply and the second power supply may apply radio frequency (RF) power to the lower electrode 34 and the upper electrode to generate plasma P within the chamber 20. For example, RF power may be applied to the upper electrode, and the lower electrode 34 may be grounded. RF power may be applied to the lower electrode 34, and the upper electrode may be grounded. Power having different phases may be applied to the upper and lower electrodes 34. Direct current (DC) power may be used instead of RF power.

[0042] A plasma may be generated from the dry cleaning gas by a power supply 60. The power supply 60 may have a process method different from the dry cleaning process method. The dry cleaning process method may provide a low-density, low-energy, and low-bias plasma. For example, a radio frequency power having a frequency of 13.56 MHz may be applied to the upper electrode. A bias voltage of 0 V to 500 V may be applied to the wafer W.

[0043] The controller may be connected to the power supply 60 and control the operation thereof. The controller having a microcomputer and various interface circuits may control the operation of the dry cleaning apparatus 10 based on a program and method information stored in an external or internal memory.

[0044] In an exemplary embodiment, an optical window 50 may be provided in an upper sidewall of the chamber 20. For example, the optical window 50 may be positioned to face the wafer W such that the bottom surface of the optical window 50 is parallel to the upper surface of the wafer W. The optical window 50 may include a transparent material for transmitting laser light. The optical window 50 may include a material such as glass, quartz, or the like. The optical window 50 may have a transmittance of approximately 80%.

[0045] like Figure 2 and Figure 3 As shown, the optical window 50 can be arranged in the middle area of the showerhead. The showerhead can have an opening 45 in the middle area of the showerhead. The opening 45 can penetrate the showerhead plate 42 and the manifold 40. The optical window 50 can be installed in the opening 45. Although not shown in the figure, the optical window 50 can be fastened in the opening 45 by a fastening member such as a screw, and a sealing member such as an O-ring can hermetically seal the chamber 20 from the outside.

[0046] The lower surface of the showerhead may be inclined at a first angle θ1 relative to the surface of the wafer W so as to face the wafer W placed on the substrate support 30. The showerhead plate 42 of the showerhead may be arranged to be inclined at the first angle θ1 relative to the upper surface of the optical window 50 parallel to the surface of the wafer W. For example, the first angle θ1 may be in the range of about 3 degrees to about 45 degrees.

[0047] The laser irradiator 100 can be installed near the optical window 50 of the showerhead. The laser irradiator 100 can be set on the optical window 50 outside the chamber 20. The laser irradiator 100 can irradiate the laser toward the wafer W through the optical window 50 to heat the wafer W to a desired temperature range. For example, the laser irradiator 100 can heat the wafer W to a temperature range of approximately 200° C. to 800° C.

[0048] like Figure 4 and Figure 5 As shown, the laser irradiator 100 may include: a laser source 110 for generating laser light L1; and an optical system for projecting the laser light L1 output from the laser source 110 onto the entire surface of the wafer W through the optical window 50 with uniform intensity. The laser source 110 may also be referred to as a laser. For example, the optical system may include: a collimator 120 for converting the laser light L1 output from the laser source 110 into collimated light L2; and an aspheric lens 130 for causing the collimated light L2 to spread radially (in a spoke-like manner). The laser light L passing through the aspheric lens 130 can be irradiated onto the entire surface of the wafer W through the optical window 50 with uniform intensity.

[0049] The diameter of the laser light L passing through the aspheric lens 130 can gradually increase as it moves away from the back focal plane, and the surface profile, position, etc. of the aspheric lens 130 can be determined to irradiate the laser light L with uniform intensity across the entire surface of the wafer W. For example, the collimated light L2 can pass through the aspheric lens 130, converge toward the back focal plane of the aspheric lens 130, pass through the back focal plane, and then diverge away from the back focal plane. When compared to the diameter of the collimated light L2, the diameter of the laser light L irradiated onto the surface of the wafer W through the aspheric lens 130 can be expanded by approximately 200% to approximately 1000%.

[0050] like Figure 6 As shown, the absorption rate of laser light in wafer W may vary depending on the wavelength. Laser source 110 may generate laser light with a wavelength of approximately 250 nm to approximately 1000 nm, which falls within the maximum absorption rate range of wafer W. The laser power may have a power of 100 W to 100 kW. The laser power may be controlled to adjust the elevated surface temperature of wafer W.

[0051] As described above, the laser irradiator 100 may be disposed outside the chamber 20 and may irradiate laser light having uniform intensity over the entire surface of the wafer W within the chamber 20 to the shower head through the optical window 50 .

[0052] Through radiant heat transfer from the laser, chamber 20 can be maintained at a constant temperature, and the surface of wafer W can be heated to a desired temperature range to increase the chemical reaction rate of the dry cleaning gas in the vapor or gas phase, thereby reducing the dry cleaning process time. There is no need to affect the internal environment of chamber 20 to maintain the cleaning penetration performance of the chemical material in the gas phase, and the temperature of wafer W can be precisely increased to reduce the dry cleaning process time, thereby improving process productivity and equipment stability.

[0053] In addition, the optical window 50 may prevent the optical lens of the laser irradiator 100 from being contaminated by chemical materials evaporated from the wafer W by radiant heat transfer of the laser light.

[0054] Figure 7 is a block diagram illustrating a dry cleaning apparatus according to example embodiments. Figure 8 It shows Figure 7 In addition to the configuration of the plasma generator, laser irradiator and nozzle, the dry cleaning device can be the same as that of the reference Figures 1 to 5 The dry cleaning apparatus described is substantially the same or similar. Therefore, the same reference numerals will be used to refer to the same or similar elements, and any further repeated description of the above elements will be omitted.

[0055] Reference Figures 7 and 8 The dry cleaning apparatus 11 may include a chamber 20, a substrate support 30, a manifold 40, a showerhead, a plasma generator, and a laser irradiator 100. The plasma generator may include a lower electrode 34, an upper electrode 46, and a power supply 60. For example, the upper electrode 46 and the manifold 40 are separated from each other.

[0056] In example embodiments, the dry cleaning apparatus 11 may be an apparatus configured to dry clean a material on a substrate such as a semiconductor wafer W disposed within an inductively coupled plasma (ICP) chamber.

[0057] In an exemplary embodiment, the upper electrode 46 may be disposed outside the chamber 20 such that the upper electrode 46 faces the lower electrode 34. The upper electrode 46 may include a radio frequency (RF) antenna. The antenna may have a planar coil shape. The electromagnetic field induced by the RF antenna may be applied to the dry cleaning gas supplied within the chamber 20 to generate plasma.

[0058] The showerhead may constitute at least a portion of a vacuum lid assembly that covers an upper opening of the chamber 20. The showerhead may be disposed in the upper portion of the chamber 20. An upper electrode 46 may be disposed on a showerhead plate 42 of the showerhead. The showerhead may include a dielectric material. For example, the showerhead may include aluminum oxide (Al2O3). RF power from the upper electrode 46 may be transferred to the chamber 20 through the showerhead. In other words, the showerhead may serve as a dielectric window for the ICP chamber.

[0059] In example embodiments, the chamber 20 may include a lid 22 covering an upper portion of the chamber 20. The lid 22 may hermetically seal the upper portion of the chamber 20. The upper electrode 46 may be disposed on the lid 22 to face the lower electrode 34. The lid 22 may include a dielectric window in a circular plate shape. For example, the dielectric window may include aluminum oxide (Al2O3).

[0060] In this case, the upper electrode 46 can be arranged on the lid 22. The upper electrode 46 can include a radio frequency (RF) antenna. The antenna can have a coil shape. The lid can include a dielectric window in the shape of a circular plate. For example, the dielectric window can include aluminum oxide (Al2O3). Power from the antenna can be transmitted to the chamber 20 through the dielectric window.

[0061] The optical window 50 may be installed in the opening 23 in the middle region of the cover 22 and in the opening 45 in the middle region of the showerhead.

[0062] In an exemplary embodiment, the lower surface of the showerhead may extend to be parallel to the surface of the wafer W. The upper surface of the showerhead plate 42 of the showerhead may be coplanar with the upper surface of the optical window 50, which is parallel to the surface of the wafer W. Here, the spray holes 41 of the showerhead may extend toward the wafer W, thereby being inclined at a second angle θ2 relative to the surface of the wafer W. For example, the second angle θ2 may be in the range of about 3 degrees to about 45 degrees.

[0063] Therefore, the shower head can uniformly supply the dry cleaning gas over the entire surface of the wafer W, thereby providing uniform plasma distribution.

[0064] Figure 9 is a view illustrating a laser irradiator of a dry cleaning apparatus according to example embodiments. Figure 10 It shows Figure 9 Plan view of the optical mask in the laser illuminator. Figure 11 It is shown by Figure 9 A perspective view of the laser irradiator in FIG. irradiating laser light onto a wafer. In addition to the additional optical mask, the laser irradiator can be used with reference Figures 1 to 5The laser irradiators described are substantially the same or similar. Therefore, the same reference numerals will be used to refer to the same or similar elements, and any further repeated description on the above elements will be omitted.

[0065] Reference Figures 9 to 11 The laser irradiator of the dry cleaning apparatus may further include an optical mask 140 configured to selectively transmit the laser light L passing through the aspherical lens 130 .

[0066] The optical mask 140 may include a first region 141 and a second region 142. The first region 141 may have a first transmittance, and the second region 142 may have a second transmittance greater than the first transmittance. The first region 141 may be a blocking pattern for blocking the laser light L from passing therethrough, and the second region 142 may be a transparent pattern for allowing the laser light L to pass therethrough.

[0067] The laser light L of the laser irradiator 100 may be irradiated onto a desired area on the wafer W through the transparent pattern of the optical mask 140. The second area 142 may have a ring shape so that the laser light L may be irradiated onto the peripheral area of the wafer W.

[0068] Figure 12 is a view illustrating an optical mask of a laser irradiator according to example embodiments. Figure 13 It is shown by Figure 12 A perspective view of the laser irradiator in FIG. irradiating laser light onto a wafer. The laser irradiator can be the same as the reference except for the shape of the transparent pattern. Figures 9 to 11 The laser irradiators described are substantially the same or similar. Therefore, the same reference numerals will be used to refer to the same or similar elements, and any further repeated description on the above elements will be omitted.

[0069] refer to Figure 12 and Figure 13 , the optical mask 140 may have a first region 141 and a second region 142. The first region 141 may have a first transmittance, and the second region 142 may have a second transmittance greater than the first transmittance. The first region 141 may be a blocking pattern for blocking the laser light L from passing through, and the second region 142 may be a transparent pattern for allowing the laser light L to pass through.

[0070] The laser light L of the laser irradiator 100 can be irradiated onto a desired area on the wafer W through the transparent pattern of the optical mask 140. The first area 141 and the second area 142 can have a stripe shape. The first area 141 and the second area 142 can be arranged alternately and repeatedly in the first direction. Alternatively, the first area 141 and the second area 142 can be arranged in a grid pattern.

[0071] In the following, we will explain how to use Figure 1 and Figure 7 A method for dry cleaning a substrate using a dry cleaning device.

[0072] Figure 14 is a flowchart illustrating a dry cleaning method according to example embodiments.

[0073] Reference Figure 1 、 Figure 5 、 Figure 7 and Figure 14 First, a substrate such as a wafer W to be cleaned may be loaded into the chamber 20 ( S100 ), and a dry cleaning gas may be supplied into the chamber 20 ( S110 ).

[0074] In exemplary embodiments, a wafer W may be loaded into the chamber 20 of the dry cleaning apparatus 10 , 11 , and a dry cleaning gas may be supplied onto the wafer W.

[0075] First, a semiconductor wafer W can be loaded onto an electrostatic chuck of a substrate support 30 within a chamber 20. A dry cleaning gas can be introduced into the chamber 20 through the spray holes 41 of the showerhead, and then the pressure of the chamber 20 can be controlled to a desired vacuum level by an exhaust unit. The dry cleaning gas may include F2, NH3, HF3, CH4, O3, etc.

[0076] Then, plasma may be generated within the chamber 20 (S120), and laser may be irradiated onto the surface of the wafer W to heat the wafer W (S130). Figure 14 These steps are depicted as occurring in a specific order, but the present inventive concept is not limited thereto. For example, plasma generation (S120) and irradiation of wafer W (S130) may be performed simultaneously, irradiation of wafer W (S130) may be performed while plasma generation (S120) is in progress, or plasma generation (S120) may be performed while laser irradiation (S130) is ongoing on wafer W.

[0077] For example, radio frequency power may be applied to the lower electrode 34 and the upper electrode to generate plasma within the chamber 20. The plasma may be generated from a dry cleaning gas supplied into the chamber 20. The dry cleaning process may provide a low density, low energy, and low bias plasma.

[0078] The dry cleaning gas in a vapor phase or a gas phase (ie, dry cleaning gas plasma) may react with residual materials on the wafer W.

[0079] Then, the laser irradiator 100 may irradiate the laser light L on the entire surface of the wafer W through the optical window 50. Similar to the above, although these steps are described in a specific order, the present inventive concept is not limited thereto. For example, during the time when the dry cleaning gas plasma reacts with the residual material on the wafer W, the laser irradiator 100 may irradiate the laser light L on the entire surface of the wafer W through the optical window 50.

[0080] Laser light L1 output from laser source 110 may be transformed into collimated light L2 by collimator 120, and collimated light L2 may be radially propagated by aspheric lens 130. Laser light L passing through aspheric lens 130 may be irradiated with uniform intensity across the entire surface of wafer W through optical window 50. The diameter of laser light L irradiated onto the surface of wafer W by aspheric lens 130 may be expanded by approximately 200% to approximately 1000% compared to the diameter of collimated light L2.

[0081] The laser radiation heat transfer can heat the surface of the wafer W to a desired temperature range, thereby increasing the chemical reaction rate of the dry cleaning gas in the vapor or gas phase, thereby reducing the process time of the dry cleaning process.

[0082] For example, the surface temperature of the wafer W may be raised to a sublimation temperature of cleaning process byproducts generated by the reaction of the dry cleaning gas with residual materials (or etching residues) left by the etching process. The cleaning process byproducts at the sublimation temperature may be converted into gaseous cleaning process byproducts, and the gaseous cleaning process byproducts may be exhausted from the chamber 20 through the exhaust port 24. For example, referring to Figures 15 to 17 The dry cleaning process for removing the etching residue is described in detail.

[0083] In the following, we will explain how to use Figure 14 A method for forming a pattern of a semiconductor device using a dry cleaning method.

[0084] Figures 15 to 17 is a cross-sectional view illustrating a method of forming a pattern of a semiconductor device according to example embodiments.

[0085] Reference Figure 15 , after sequentially forming a thin layer 210 and an object layer 220 on a semiconductor substrate 200 , a photoresist pattern 230 may be formed on the object layer 220 .

[0086] The target layer 220 may include a metal layer, a metal nitride layer, an insulating layer, a semiconductor layer, or the like. For example, the target layer 220 may include a nitride layer, a silicon nitride layer, a silicon layer, a polysilicon layer, a silicon oxide layer, or the like. Alternatively, the target layer 220 may include a titanium nitride layer, a titanium layer, a tungsten layer, a tungsten nitride layer, or the like. The target layer 220 may include an organic layer having excellent gap-filling properties. For example, the target layer 220 may include a bottom anti-reflective coating (BARC), a spin-on hard mask layer (SOH), an amorphous carbon layer, or the like.

[0087] After forming a photoresist layer on the object layer 220 , the photoresist layer may be exposed to form a photoresist pattern 230 .

[0088] After an exposure mask having a desired pattern is aligned on the photoresist layer, light may be irradiated onto the exposure mask, and a portion of the photoresist layer may react with the light from the exposure mask. Examples of light used in the exposure process may include KrF, ArF, EUV (extreme ultraviolet), VUV, electron beam, X-ray, ion beam, etc.

[0089] An exposed portion of the photoresist layer may be dissolved by a developer and removed to form the photoresist pattern 230. For example, the line and space shape of the photoresist pattern 230 may have a relatively small line width.

[0090] Thus, an etching process may be performed on the object layer 220 using the photoresist pattern 230 as an etching mask. Portions of the object layer 220 exposed by the photoresist pattern 230 may be removed by the etching process to form openings 222 in the object layer 220.

[0091] After the etching process is performed, residual material 240 may remain on semiconductor substrate 200. Residual material 240 may also be referred to as etching residue. For example, when target layer 220 includes silicon, residual material 240 may be a material containing silicon. To remove residual material 240, the aforementioned dry cleaning method may be performed on semiconductor substrate 200.

[0092] Alternatively, the target layer may be a polysilicon layer formed on a silicon wafer, a metal layer such as a tungsten layer, an organic layer such as a photoresist pattern, etc. In this case, a dry cleaning method may be performed on the target layer.

[0093] Reference Figure 16 , the residual material 240 on the semiconductor substrate 200 may chemically react with the dry cleaning gas plasma to form chemical material 242 as a byproduct of the cleaning process. Figure 1 As shown, a dry cleaning gas plasma may be generated from the dry cleaning gas supplied to the chamber 20 .

[0094] For example, the semiconductor substrate 200 may be loaded onto Figure 1 or Figure 7 The dry cleaning gas may be supplied to the semiconductor substrate 200. The dry cleaning gas may include F2, NH3, HF3, CH4, O3, etc. In an exemplary embodiment, the semiconductor substrate 200 having the etching residue formed during the etching process may be loaded into the chamber 20 of the dry cleaning equipment. Figure 1 or Figure 7 The present invention is not limited thereto. For example, Figure 1 or Figure 7 An etching process is performed on the semiconductor substrate 200 within the dry cleaning apparatus of the embodiment, and then a dry cleaning gas may be supplied onto the semiconductor substrate 200 without loading the semiconductor substrate 200 into the chamber.

[0095] Then, plasma power may be applied to generate plasma within the chamber 20. For example, radio frequency (RF) power may be applied to the lower electrode 34 and the upper electrode ( Figure 1 40 or 42 and Figure 7 46 in the chamber 20 to generate plasma within the chamber 20. In an exemplary embodiment, the lower electrode 34 and the upper electrode can independently receive RF power so that the substrate bias formed on the wafer W can be independently controlled with respect to the generation of the plasma. The plasma can be generated from the dry cleaning gas supplied into the chamber 20. The dry cleaning process method can provide a low-density, low-energy, and low-bias plasma.

[0096] The dry cleaning gas plasma may react with the residual material 240 on the semiconductor substrate 200 to form a chemical material 242 .

[0097] Reference Figure 17 , laser light may be irradiated onto the surface of semiconductor substrate 200 to heat semiconductor substrate 200 and remove chemical material 242 by forming gaseous cleaning process byproducts. In an exemplary embodiment, laser light may be irradiated in situ onto the semiconductor substrate while the substrate is subjected to dry cleaning gas plasma that reacts with residual material 240. For example, irradiation of laser light and generation of dry cleaning gas plasma to react with residual material 240 may be performed simultaneously.

[0098] In example embodiments, the laser irradiator 100 may irradiate the laser L on the entire surface of the semiconductor substrate 200 through the optical window 50. The laser L passing through the aspherical lens 130 of the laser irradiator 100 may be irradiated on the entire surface of the semiconductor substrate 200 through the optical window 50 with uniform intensity.

[0099] The laser radiation heat transfer can heat the surface of semiconductor substrate 200 to a desired temperature range, thereby increasing the chemical reaction rate of the dry cleaning gas in the vapor or gas phase, thereby improving the processing speed of the dry cleaning process.

[0100] For example, the surface temperature of the semiconductor substrate 200 may be increased to a sublimation temperature of cleaning process byproducts converted from the residual material 240. The cleaning process byproducts may be converted to gaseous cleaning process byproducts at the sublimation temperature. The gaseous cleaning process byproducts may be exhausted from the chamber 20 through the exhaust port 24.

[0101] After the etching process, a dry cleaning method may be used to remove residual materials remaining on, for example, the polysilicon layer, the metal layer, or the oxide layer.

[0102] Figures 18 to 27 are plan views and cross-sectional views illustrating various stages of a method for manufacturing a semiconductor device according to an example embodiment. In particular, Figure 18 and Figure 21 It's a floor plan. Figure 19 、 Figure 20 and Figures 22 to 27 It is a cross-sectional view.

[0103] Figure 19 and Figure 20 It is along Figure 18 A cross-sectional view taken along line AA′, Figure 22 It is along Figure 21 A cross-sectional view taken along line BB′ of FIG. Figures 23 to 27 It is along Figure 21 Cross-sectional view taken along line CC′.

[0104] refer to Figure 18 and Figure 19 , the upper portion of the semiconductor substrate 300 may be partially etched to form the active fin 305. Thus, the active fin 305 may protrude in a vertical direction substantially perpendicular to the upper surface of the semiconductor substrate 300 and may include the same material as that of the semiconductor substrate 300.

[0105] In example embodiments, after forming a first mask 310 on a semiconductor substrate 300, an upper portion of the semiconductor substrate 300 may be etched using the first mask 310 as an etching mask to form active fins 305. The active fins 305 may extend in a first direction substantially parallel to an upper surface of the semiconductor substrate 300, and a plurality of active fins 305 may be formed in a second direction substantially parallel to the upper surface of the semiconductor substrate 300 and intersecting the first direction. In example embodiments, the first direction and the second direction may be orthogonal to each other.

[0106] The first grooves 320 may be formed between the active fins 305 in the second direction. That is, the active fins 305 may be spaced apart from each other in the second direction by the first grooves 320.

[0107] refer to Figure 20 , an isolation structure 345 may be formed to fill a lower portion of the first groove 320 .

[0108] In example embodiments, after forming a barrier layer on the active fin 305 , the first mask 310 , and the semiconductor substrate 300 to partially or completely fill the first groove 320 , an upper portion of the barrier layer may be removed to form an isolation structure 345 filling a lower portion of the first groove 320 .

[0109] The barrier layer may include a material having a high etch selectivity compared to oxide, nitride (such as silicon nitride), carbide (such as silicon carbide), polysilicon, etc. The barrier layer may be formed to fill at least a lower portion of the first groove 320 .

[0110] The active fin 305 may include a lower active pattern 305 b , a sidewall of which may be surrounded by the isolation structure 345 , and an upper active pattern 305 a protruding from an upper surface of the isolation structure 345 in a vertical direction.

[0111] Reference Figures 21 to 23 A dummy gate structure 390 may be formed on the active fin 305 and the isolation structure 345 .

[0112] A dummy gate insulating layer, a dummy gate electrode layer and a dummy gate mask layer can be sequentially formed on the active fin 305 and the isolation structure 345, the dummy gate mask layer can be patterned to form a dummy gate mask 380, and the dummy gate electrode layer and the dummy gate insulating layer can be sequentially etched using the dummy gate mask 380 as an etching mask to form a dummy gate structure 390.

[0113] Thus, a dummy gate structure 390 including the dummy gate insulating pattern 360 , the dummy gate electrode 370 , and the dummy gate mask 380 , which are sequentially stacked, may be formed on the semiconductor substrate 300 .

[0114] The dummy gate insulating layer may include oxide (eg, silicon oxide), the dummy gate electrode layer may include polysilicon, and the dummy gate mask layer may include nitride (eg, silicon nitride).

[0115] The dummy gate insulating layer can be formed by, for example, a chemical vapor deposition (CVD) process or an atomic layer deposition (ALD) process. Alternatively, the dummy gate insulating layer can be formed by performing a thermal oxidation process on the upper active pattern 305a of the active fin 305. In this case, the dummy gate insulating layer can be formed only on the upper surface of the upper active pattern 305a. For example, the dummy gate electrode layer and the dummy gate mask layer can also be formed by a CVD process or an ALD process.

[0116] The dummy gate structure 390 may extend in the second direction, and a plurality of dummy gate structures 390 may be formed in the first direction.

[0117] Reference Figure 24 A spacer layer covering the dummy gate structure 390 may be formed on the active fin 305 and the isolation structure 345, and the spacer layer may be anisotropically etched to form gate spacers 400 on each opposing sidewall of the dummy gate structure 390 in the first direction. In this case, a fin spacer (not shown) may be formed on each opposing sidewall of the active pattern 305a in the second direction.

[0118] The spacer layer may include a nitride, such as silicon nitride. In one embodiment, the spacer layer may have a stacked structure including a nitride layer and an oxide layer.

[0119] Upper portions of the active fins 305 adjacent to the gate spacers 400 may be etched to form second recesses 420 .

[0120] The drawings show that the lower surface of the second groove 420 is higher than the upper surface of the lower active pattern 305b. The inventive concept is not limited thereto. For example, the lower surface of the second groove 420 may be lower than the height of the upper surface of the portion of the lower active pattern 305b on which the second groove 420 is not formed.

[0121] refer to Figure 25 , a source / drain layer 430 filling the second groove 420 may be formed.

[0122] In example embodiments, the source / drain layer 430 may be formed by performing a selective epitaxial growth (SEG) process using the upper surface of the active fin 305 exposed by the second groove 420 as a seed layer.

[0123] In example embodiments, an SEG process may be performed using a silicon source gas, a germanium source gas, an etching gas, and a carrier gas, thereby forming a single crystal silicon germanium layer as the source / drain layer 430. The SEG process may also be performed using a P-type impurity source gas, thereby forming a single crystal silicon germanium layer doped with P-type impurities as the source / drain layer 430.

[0124] The shape of the cross section of the source / drain layer 430 taken along the second direction may be similar to a pentagon.

[0125] After forming an insulating interlayer 440 having a thickness sufficient to cover the dummy gate structure 390, the gate spacer 400, the fin spacer, and the source / drain layer 430 and to fill the space defined by the dummy gate structure 390 and the source / drain layer 430, the insulating interlayer 440 may be planarized until the upper surface of the dummy gate electrode 370 is exposed. During the planarization process, the dummy gate mask 380 may also be removed together with the insulating interlayer 440.

[0126] Reference Figure 26 , the exposed dummy gate electrode 370 and the dummy gate insulating pattern 360 thereunder may be removed to form a first opening 450 exposing the inner sidewall of the gate spacer 400 and the upper surface of the active fin 305. In example embodiments, the dummy gate electrode 370 may be removed by Figure 14 The dummy gate electrode 370 and the dummy gate insulating pattern 360 thereunder are removed by a dry cleaning method in FIG.

[0127] For example, the semiconductor substrate 300 may be loaded onto Figure 1 or Figure 7 The dry cleaning gas may be supplied to the semiconductor substrate 300 in the chamber 20 of the dry cleaning apparatus. Thus, plasma may be generated from the dry cleaning gas in the chamber 20, and the dry cleaning gas plasma may react with the dummy gate electrode 370 and the dummy gate insulating pattern 360 on the semiconductor substrate 300 to form a chemical material.

[0128] Then, the laser may be irradiated onto the surface of the semiconductor substrate 300 to heat the semiconductor substrate 300, thereby removing the chemical material by forming gaseous cleaning process byproducts. The present invention is not limited thereto. For example, the laser may be irradiated in situ onto the semiconductor substrate 300 during the time it takes for the dry cleaning gas plasma to react with the residual material.

[0129] The laser irradiator 100 may irradiate the laser light L on the entire surface of the semiconductor substrate 300 through the optical window 50. The laser light L passing through the aspherical lens 130 may irradiate the entire surface of the semiconductor substrate 300 through the optical window 50 with uniform intensity.

[0130] The laser radiation heat transfer can raise the surface temperature of the semiconductor substrate 300 to the sublimation temperature of the cleaning process byproducts, thereby converting the cleaning process byproducts into gaseous cleaning process byproducts. The gaseous cleaning process byproducts can be exhausted from the chamber 20 through the exhaust port 24.

[0131] refer to Figure 27, a gate electrode structure 500 filling the first opening 450 may be formed.

[0132] Specifically, a thermal oxidation process may be performed on the upper surface of the active fin 305 exposed by the first opening 450 to form an interface pattern 460. A gate insulating layer and a work function control layer may be sequentially formed on the interface pattern 460, the isolation structure 345, the gate spacer 400, and the insulating interlayer 440. A gate electrode layer may be formed on the work function control layer to fill the remaining portion of the first opening 450.

[0133] The gate electrode layer, the work function layer, and the gate insulating layer may be planarized until the upper surface of the insulating interlayer 440 is exposed to form a gate insulating pattern 470, a work function control pattern 480, and a gate electrode 490. For example, the gate insulating pattern 470 and the work function control pattern 480 may be sequentially stacked on the upper surface of the interface pattern 460, the upper surface of the isolation structure 345, and the inner sidewall of the gate spacer 400, and the gate electrode 490 filling the remaining portion of the first opening 450 may be formed on the work function control pattern 480.

[0134] Then, after removing the upper portion of the gate electrode structure 500 and the gate spacer 400 to form a third groove, a capping pattern (not shown) filling the third groove can be formed. Contact plugs, through-holes, and wiring electrically connected to the source / drain layer 430 and / or the gate electrode structure 500 can be formed to complete the manufacture of the semiconductor device.

[0135] Figures 28 to 34 is a cross-sectional view illustrating a method of manufacturing a semiconductor device according to an example embodiment. For example, Figures 28 to 34 A method of manufacturing a nonvolatile semiconductor device having a three-dimensional structure or a vertical type memory device including a vertical channel may be shown.

[0136] exist Figures 28 to 34 In the embodiment of the present invention, a direction extending vertically from the upper surface of the substrate can be defined as a first direction. In addition, two directions parallel to the upper surface of the substrate and intersecting each other can be defined as a second direction and a third direction, respectively. For example, the second direction and the third direction can intersect each other perpendicularly.

[0137] Reference Figure 28 Interlayer insulating layers 602 (eg, 602a to 602g) and sacrificial layers 604 (eg, 604a to 604f) may be alternately and repeatedly formed on substrate 600 to form a mold structure. Thereafter, the mold structure may be partially etched to form a channel hole 610 exposing the upper surface of substrate 600.

[0138] For example, the interlayer insulating layer 602 may include silicon oxide. The sacrificial layer 604 may include a material having an etching selectivity relative to the interlayer insulating layer 602 and may be easily removed by a wet etching process. For example, the sacrificial layer 604 may include silicon nitride.

[0139] The sacrificial layer 604 may be removed in a subsequent process to provide space for ground select lines (GSL), word lines, and string select lines (SSL). Therefore, the number of interlayer insulating layers 602 and sacrificial layers 604 may be determined in consideration of the number of GSLs, word lines, and SSLs.

[0140] For example, the mold structure may be partially removed by a dry etching process to form the channel holes 610. Each channel hole 610 may be a trench extending along the third direction. In addition, the channel holes 610 may be arranged along the second direction and spaced apart from each other.

[0141] Reference Figure 29 A vertical channel structure 620 including a dielectric layer structure 622, a channel 624, and a filling pattern 626 may be formed in each channel hole 610. A capping pad 630 may be formed on the vertical channel structure 620.

[0142] For example, a dielectric layer may be formed along the sidewalls and bottom surface of each channel hole 610 and the upper surface of the uppermost interlayer insulating layer 602g. For example, a blocking layer, a charge trap layer, and a tunnel insulating layer may be sequentially formed to obtain a dielectric layer.

[0143] For example, the upper and lower portions of the dielectric layer may be removed by an etch-back process. Thus, portions of the dielectric layer formed on the uppermost interlayer insulating layer 602g and the upper surface of the substrate 600 may be substantially removed to form a dielectric layer structure 622. For example, the dielectric layer structure 622 may be formed at the sidewalls of each trench hole 610 and may have a substantially cylindrical shape or a substantially cylindrical shell shape.

[0144] Thereafter, a channel layer may be formed on surfaces of the uppermost interlayer insulating layer 602g and the dielectric layer structure 622 and the upper surface of the substrate 600. A filling layer may be formed on the channel layer to fill a remaining portion of each channel hole 610.

[0145] For example, the filling layer and the channel layer may be planarized by a chemical mechanical planarization (CMP) process and / or an etch-back process until the uppermost interlayer insulating layer 602g is exposed. Thus, a channel 624 and a filling pattern 626 sequentially stacked from the inner wall of the dielectric layer structure 622 may be formed to fill each channel hole 610.

[0146] A capping pad 630 capping an upper portion of each channel hole 610 may be further formed on the vertical channel structure 620. A first upper insulating layer 640 may be formed on the uppermost interlayer insulating layer 602g to cover the capping pad 630.

[0147] Reference Figure 30 The first upper insulating layer 640 and the mold structure may be partially etched to form the channel rows CR and the openings 650. The openings 650 may be provided between two adjacent channel rows CR. For example, portions of the first upper insulating layer 640 and the mold structure may be etched by a dry etching process to form the openings 650 and the channel rows CR.

[0148] When the opening 650 is formed, the interlayer insulating layer 602 and the sacrificial layer 604 may become interlayer insulating patterns 606 (e.g., 606a to 606g) and sacrificial patterns 608 (e.g., 608a to 608f). The interlayer insulating patterns 606 and the sacrificial patterns 608 at each level may have a plate shape surrounding the vertical channel structure 620 included in the channel row CR and extending in one direction.

[0149] Reference Figure 31 , the sacrificial pattern 608 whose sidewalls are exposed by the opening 650 may be removed.

[0150] In example embodiments, the sacrificial pattern 608 may be removed by a wet etching process to form the gap 660. During the wet etching process, residual material may remain on the interlayer insulating pattern 606 and the vertical channel structure 620 exposed by the gap 660, as shown in FIG. Figure 15 In an example embodiment, the Figure 14 The dry cleaning method in removes residual materials on the interlayer insulating patterns 606 and the vertical channel structures 620.

[0151] For example, after a wet etching process to form the gap 660, the substrate 600 may be loaded onto Figure 1 or Figure 7 The dry cleaning gas may be supplied to the substrate 600 in the chamber 20 of the dry cleaning apparatus. Then, plasma may be generated from the dry cleaning gas within the chamber 20, and the dry cleaning gas plasma may react with the residual material on the sidewalls of the sacrificial pattern 608 exposed by the gap 660 to form a chemical material, as shown in FIG. Figure 16 discussed.

[0152] Then, laser light L may be irradiated onto the surface of substrate 600 to heat substrate 600, thereby removing chemical materials by forming gaseous cleaning process byproducts. The present invention is not limited to this step sequence. For example, laser light L may be irradiated onto the surface of substrate 600 while the dry cleaning gas plasma reacts with the residual material on sacrificial pattern 608.

[0153] The laser irradiator 100 may irradiate the laser light L on the entire surface of the substrate 600 through the optical window 50. The laser light L passing through the aspherical lens 130 may irradiate the entire surface of the substrate 600 through the optical window 50 with uniform intensity.

[0154] The laser radiation heat transfer can raise the surface temperature of the substrate 600 to the sublimation temperature of the chemical material, thereby converting the chemical material into gaseous cleaning process byproducts that can be exhausted from the chamber 20 through the exhaust port 24 .

[0155] The gap 660 may be defined by a space where the sacrificial pattern 608 is removed. A plurality of gaps 660 may be formed between adjacent interlayer insulating patterns 606. An outer sidewall of the dielectric layer structure 622 may be exposed by the gap 660.

[0156] Reference Figure 32 A barrier conductive layer 663 may be formed along the exposed outer sidewalls of the dielectric layer structure 622, the inner wall of the gap 660, the surface of the interlayer insulating pattern 606, and the exposed upper surface of the substrate 600. A metal gate layer 665 may be formed on the barrier conductive layer 663. In an exemplary embodiment, the metal gate layer 665 may fully fill the gap 660 and may at least partially fill the opening 650.

[0157] Reference Figure 33 The barrier conductive layer 663 and the metal gate layer 665 may be partially etched to form a barrier conductive pattern 667 and a metal gate 670 (e.g., 670a to 670f) in each gap 660. The metal gate 670 may have a linear shape or a plate shape surrounding the sidewall of the vertical channel structure 620 included in the channel row CR and extending in one direction.

[0158] Reference Figure 34 , an impurity region 605 may be formed on the substrate 600 exposed by the opening 650 , and a spacer 680 and a cutting pattern 685 may be formed in the opening 650 .

[0159] A second upper insulating layer 690 may be formed on the first upper insulating layer 640 to cover the cutting pattern 685 and the spacer 680 .

[0160] Thereafter, a bit line contact 695 may be formed. The bit line contact 695 may pass through the first upper insulating layer 640 and the second upper insulating layer 690 to contact the capping pad 630. Then, a bit line 697 electrically connected to the bit line contact 695 may be formed on the second upper insulating layer 690.

[0161] The dry cleaning apparatus and method described above can be used to manufacture semiconductor devices, including logic devices and memory devices. For example, semiconductor devices can be used in various systems, such as computing systems. Semiconductor devices may include finFETs (fin field-effect transistors), DRAMs (dynamic random access memories), and vertical NANDs (VNANDs). The system can be used in computers, portable computers, laptop computers, personal portable terminals, tablet computers, mobile phones, digital music players, and the like.

[0162] The foregoing is illustrative of exemplary embodiments and should not be construed as limiting thereof. Although certain exemplary embodiments have been described, those skilled in the art will readily appreciate that various modifications may be made to the exemplary embodiments without materially departing from the novel teachings and advantages of the present invention. Therefore, all such modifications are intended to be included within the scope of the exemplary embodiments as defined in the claims.

Claims

1. A dry cleaning device comprising: chamber; a substrate support configured to support a substrate within the chamber; a shower head disposed at an upper portion of the chamber, wherein the shower head comprises a plurality of spray holes for supplying a dry cleaning gas toward the substrate and an optical window for transmitting a laser toward the substrate support, wherein the plurality of spray holes extend toward the substrate, and a lower surface of the optical window is parallel to an upper surface of the substrate; a plasma generator configured to generate plasma from the dry cleaning gas; and a laser irradiator configured to uniformly irradiate laser light in situ across the entire surface of the substrate through the optical window during a process of removing residual material on the substrate using the dry cleaning gas, thereby heating the substrate to increase a chemical reaction rate of the dry cleaning gas, The lower surface of the nozzle is parallel to the surface of the substrate, and the nozzle hole of the nozzle is inclined at a predetermined angle relative to the surface of the substrate.

2. The dry cleaning equipment according to claim 1, in, The optical window is mounted in an opening extending through a middle region of the showerhead.

3. The dry cleaning equipment according to claim 2, in, The showerhead includes a showerhead plate having an annular shape.

4. The dry cleaning equipment according to claim 3, in, The opening passes through a middle area of the showerhead plate.

5. The dry cleaning equipment according to claim 1, in, The plasma generator includes an upper electrode in the showerhead and a lower electrode in the substrate support.

6. The dry cleaning equipment according to claim 1, in, The laser irradiator includes a laser for generating the laser light, and an optical system configured to project the laser light output from the laser onto the entire surface of the substrate through the optical window.

7. The dry cleaning equipment according to claim 6, in, The optical system includes an aspheric lens for causing the laser light to propagate radially.

8. The dry cleaning equipment according to claim 7, in, The optical system further includes an optical mask configured to selectively transmit the laser light passing through the aspherical lens.

9. A dry cleaning device comprising: a chamber having an optical window; a substrate support configured to support a substrate within the chamber; a shower head disposed at an upper portion of the chamber, wherein the shower head comprises a plurality of spray holes for supplying a dry cleaning gas toward the substrate, wherein the plurality of spray holes extend toward the substrate, and a lower surface of the optical window is parallel to an upper surface of the substrate; a plasma generator configured to generate plasma from the dry cleaning gas; and a laser irradiator configured to uniformly irradiate laser light in situ across the entire surface of the substrate through the optical window and the plasma during a process of removing residual material on the substrate using the dry cleaning gas, thereby heating the substrate to increase a chemical reaction rate of the dry cleaning gas, The lower surface of the shower head is parallel to the surface of the substrate, and each spray hole of the shower head is inclined at a predetermined angle relative to the surface of the substrate.

10. The dry cleaning equipment according to claim 9, in, The optical window passes through a middle area of the nozzle.

11. The dry cleaning device according to claim 10, in, The showerhead includes a showerhead plate having an annular shape.

12. The dry cleaning equipment according to claim 9, in, The laser irradiator is arranged on the optical window outside the chamber.

13. The dry cleaning equipment according to claim 9, in, The plasma generator includes an upper electrode in the showerhead and a lower electrode in the substrate support.

14. The dry cleaning equipment according to claim 9, in, The laser irradiator includes a laser for generating the laser light, and an optical system configured to project the laser light output from the laser onto the entire surface of the substrate through the optical window.

15. The dry cleaning device according to claim 14, in, The optical system includes an aspheric lens for causing the laser light to propagate radially.

16. The dry cleaning equipment according to claim 15, in, The optical system further includes an optical mask configured to selectively transmit the laser light passing through the aspherical lens.

17. A dry cleaning method comprising: loading a substrate into the chamber; supplying a dry cleaning gas into the chamber through a plurality of spray holes of a shower head, the plurality of spray holes of the shower head being inclined at a predetermined angle with respect to a surface of the substrate; generating a plasma from the dry cleaning gas; as well as allowing the plasma to react with etching residues on the substrate to perform cleaning, During the process of causing the plasma to react with the etching residues on the substrate, laser light is uniformly irradiated in-situ onto the entire surface of the substrate through an optical window in the upper wall of the chamber and parallel to the upper surface of the substrate, thereby heating the substrate to increase the chemical reaction rate of the dry cleaning gas.

18. The dry cleaning method according to claim 17, in, The optical window passes through a middle area of the nozzle.

19. The dry cleaning method according to claim 17, in, Irradiating the laser onto the entire surface of the substrate includes: generating the laser light; passing the laser light through an aspheric lens so as to propagate the laser light radially; and The laser light passing through the aspherical lens is projected onto the entire surface of the substrate through an optical window penetrating the shower head.

20. The dry cleaning method according to claim 19, in, Irradiating the laser onto the entire surface of the substrate further comprises: The laser light passing through the aspherical lens is selectively transmitted through an optical mask.

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