Temperature control output drive circuit, drive method and memory

Abstract

The present invention provides a temperature-controlled output drive circuit, a drive method and a memory. A resistance adjustment module for adjusting resistance is configured in the drive circuit. The current resistance value of the drive module is calculated by temperature data sensed by a temperature sensor, and the resistance of the resistance adjustment module is adjusted by a logic control module, thereby adjusting the resistance of the entire output drive by incorporating the resistance of the drive module. The present invention can perform real-time detection and adjustment, reduce the change of the output drive resistance value with temperature, make the output drive resistance always stable at a preset value, and ensure the performance of the circuit.

Description

Technical Field

[0001] The present invention relates to the field of integrated circuits, and in particular to a temperature controlled output drive circuit, a driving method of the circuit, and a memory including the circuit. Background Art

[0002] The output drive circuit of a DDR4 chip is usually configured with multiple output drive units. Figure 1 As shown, for the output driving circuit of the DDR4 chip, there are seven pull-up and pull-down driving units, and the seven driving units are selected through pull-up and pull-down signals to be configured to achieve the required output driving resistance.

[0003] When the temperature changes during the operation of the chip, due to the characteristic of resistance changing with temperature, the resistance in the driver unit will change with temperature, resulting in the resistance value of the driver unit not completely matching 240ohms, so the final output drive resistance will have a certain error from the expected value.

[0004] Therefore, the output drive resistor needs to be adjusted to control the resistance of the output drive resistor within a certain range, reduce or eliminate the change of the resistance with temperature, and stabilize the output drive resistor. Summary of the invention

[0005] The object of the present invention is to provide a temperature controlled output drive circuit, a drive method and a memory, so as to solve the problem that the resistance value of the existing drive resistor is easily changed with the temperature.

[0006] According to one aspect of the present invention, there is provided a temperature control output drive circuit, comprising:

[0007] A driving module, comprising a plurality of resistance elements, wherein the resistance elements are connected to the power supply end and the output end; the driving module receives an output driving signal;

[0008] a resistance adjustment module, comprising a plurality of adjustment resistance elements, wherein the adjustment resistance elements are connected to the power supply end and the output end, and are also connected in parallel with the resistance elements of the driving module; the resistance adjustment module is turned on or off in response to a resistance adjustment signal to adjust the resistance value of the driving circuit;

[0009] A temperature sensor, used for sensing the temperature of the output drive circuit;

[0010] The logic control module is connected to the temperature sensor and is used to output a resistance adjustment signal to the resistance adjustment module according to the temperature data of the temperature sensor.

[0011] In an exemplary embodiment of the present invention, the driving module includes a main driving module and an auxiliary driving module;

[0012] The main driving module includes a pull-up main driving module and a pull-down main driving module, wherein the pull-up main driving module includes a plurality of pull-up main resistance elements, and the pull-down main driving module includes a plurality of pull-down main resistance elements;

[0013] The auxiliary driving module includes a pull-up auxiliary driving module and a pull-down auxiliary driving module, the pull-up driving module includes a plurality of pull-up auxiliary resistance elements, and the pull-up auxiliary driving module includes a plurality of pull-down auxiliary resistance elements;

[0014] The pull-up main resistance element and the pull-up auxiliary resistance element are connected in parallel, and the pull-down main resistance element and the pull-down auxiliary resistance element are connected in parallel.

[0015] In an exemplary embodiment of the present invention, the pull-up auxiliary driving module further includes N pull-up transistor switch elements connected in parallel, the control ends of the N pull-up transistor switch elements are used to receive corresponding N pull-up driving signals, the first ends of the N pull-up transistor switch elements are commonly connected to the power supply end, and the second ends are commonly connected to the pull-up auxiliary resistance element;

[0016] The pull-down auxiliary driving module further includes M pull-down transistor switch elements connected in parallel, wherein the control ends of the M pull-down transistor switch elements are used to receive the corresponding M pull-down driving signals, and the first ends of the M pull-down transistor switch elements are commonly connected to the ground end, and the second ends are commonly connected to the pull-down auxiliary resistance element;

[0017] Wherein, N and M are both positive integers.

[0018] In an exemplary embodiment of the present invention, the resistance adjustment module includes a pull-up resistance adjustment module and a pull-down resistance adjustment module, and the adjustment resistance element is a transistor switch element; the logic control module includes P pull-up signal ports and Q pull-down signal ports, and P and Q are both positive integers;

[0019] The pull-up resistor adjustment module includes P pull-up adjustment transistor switch elements connected in parallel with the pull-up transistor switch element, the control ends of the P pull-up adjustment transistor switch elements are connected to the P pull-up signal ports in a one-to-one correspondence, the first ends of the P pull-up adjustment transistor switch elements are commonly connected to the power supply end, and the second ends are commonly connected to the pull-up auxiliary resistance element;

[0020] The pull-down resistance adjustment module includes Q pull-down adjustment transistor switch elements connected in parallel with the pull-down transistor switch element, the control ends of the Q pull-up adjustment transistor switch elements are connected one-to-one with the Q pull-down signal ports, the first ends of the Q pull-down adjustment transistor switch elements are commonly connected to the ground end, and the second ends are commonly connected to the pull-down auxiliary resistance element.

[0021] In an exemplary embodiment of the present invention, the pull-up transistor switch element and the pull-up adjustment transistor switch element are PMOS transistors, and the pull-down transistor switch element and the pull-down adjustment transistor switch element are NMOS transistors.

[0022] In an exemplary embodiment of the present invention, the resistance values ​​of the pull-up transistor switch element, the pull-down transistor switch element, the pull-up adjustment transistor switch element, and the pull-down adjustment transistor switch element are equal or unequal.

[0023] According to another aspect of the present invention, there is provided a method for temperature controlling an output drive circuit, characterized by comprising:

[0024] Using a temperature sensor to obtain the temperature value of the output drive circuit;

[0025] Determining a resistance value required by the driving circuit according to the temperature value;

[0026] A plurality of resistance elements are connected in parallel to the driving circuit according to the required resistance value, so as to adjust the resistance value of the driving circuit.

[0027] In an exemplary embodiment of the present invention, the resistance element is a transistor switch element.

[0028] In an exemplary embodiment of the present invention, the resistance value required by the driving circuit is converted into a switch control signal of the transistor switch element by a logic control circuit to control the resistance value of the driving circuit.

[0029] According to yet another aspect of the present invention, a memory is provided, comprising the temperature controlled output drive circuit as described in any one of the above.

[0030] The temperature-controlled output drive circuit of the present invention is equipped with a resistance adjustment module for adjusting resistance. The current resistance value of the drive module is calculated through the temperature data sensed by the temperature sensor, and then the resistance of the resistance adjustment module is adjusted through the logic control module, so as to adjust the resistance of the entire output drive by incorporating the resistance of the drive module. On the one hand, the change of the output drive resistance value caused by the temperature change is weakened or eliminated, so that the output drive resistance is stabilized at a preset value, ensuring the stability of the chip performance; on the other hand, the method only needs to obtain the circuit temperature to perform real-time detection and adjustment, and the resistance value can be adjusted to the expected value within a large range, and the adjustment method is simple and accurate.

[0031] It is to be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] The accompanying drawings herein are incorporated into and constitute a part of the specification, illustrate embodiments consistent with the present invention, and together with the specification are used to explain the principles of the present invention. Obviously, the accompanying drawings described below are only some embodiments of the present invention, and for those of ordinary skill in the art, other accompanying drawings can be obtained based on these accompanying drawings without creative work.

[0033] Figure 1 This is the output drive circuit diagram of the DDR4 chip;

[0034] Figure 2 The change of pull-up drive resistance;

[0035] Figure 3 This is the change of pull-down drive resistance.

[0036] Figure 4 This is a circuit diagram of a temperature control output drive circuit of the present invention;

[0037] In the figure, 1. pull-up main driving module; 2. pull-down main driving module; 3. pull-up auxiliary driving module; 4. pull-down auxiliary driving module; 5. pull-up resistor adjustment module; 6. pull-down resistor adjustment module; 7. temperature sensor; 8. logic control module. DETAILED DESCRIPTION

[0038] Example embodiments will now be described more fully with reference to the accompanying drawings. However, example embodiments can be implemented in a variety of forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that the present invention will be comprehensive and complete and fully convey the concepts of the example embodiments to those skilled in the art. The same reference numerals in the figures represent the same or similar structures, and thus their detailed description will be omitted.

[0039] The terms "a", "an", "the", "said" and "at least one" are used to indicate the presence of one or more elements / components / etc.; the terms "including" and "having" are used to express an open-ended inclusive meaning and mean that additional elements / components / etc. may be present in addition to the listed elements / components / etc.

[0040] Figure 1 This is a common DDR4 chip output drive circuit, which consists of seven pull-up and pull-down drive units. The seven drive units are selected through pull-up and pull-down signals to configure the output drive resistance to the required value. Among them, pupM represents pull-up drive, and pdnM represents pull-down drive. Since the resistance of this circuit is usually fixed, when the chip temperature changes, the resistance in the drive module will change with the temperature due to the characteristic that the resistance changes with the temperature. Figure 2 , 3 It can be seen that the resistance of the current output drive circuit under different temperature conditions is far from the expected 240ohms, and there is a large range of fluctuations (about 150-400ohms), so the final output drive resistance will have a certain error from the expected value.

[0041] In an embodiment of the present invention, a temperature-controlled output drive circuit is provided to adjust the above-mentioned deviation resistance value to an expected value. This circuit is widely used in chip interfaces, such as DDR2 / DDR3 / DDR4 / LPDDR2 / LPDDR3 / etc., which are not listed here one by one.

[0042] The temperature control output drive circuit of the embodiment of the present invention includes: a drive module, a resistance adjustment module, a temperature sensor and a logic control module. The drive module includes a plurality of resistance elements, which are connected to the power supply end and the output end, and the drive module receives the output drive signal; the resistance adjustment module includes a plurality of adjustment resistance elements, which are connected to the power supply end and the output end, and are also connected in parallel with the resistance elements of the drive module; the resistance adjustment module is turned on or off in response to the resistance adjustment signal to adjust the resistance value of the drive circuit; the temperature sensor is used to sense the temperature of the drive module; the logic control module is connected to the temperature sensor, and is used to output the resistance adjustment signal to the resistance adjustment module according to the temperature data of the temperature sensor.

[0043] When the temperature changes, the temperature sensor output changes in real time, and this change is used through a control logic to adjust the resistance of the resistance adjustment module, thereby adjusting the resistance of the entire output drive by incorporating the resistance size of the drive module. Ultimately, the internal resistance of the output drive will stabilize at the required resistance size and will not be affected by temperature. The configured resistance value will also reach the required output drive resistance.

[0044] The temperature control output drive circuit of the embodiment of the present invention is described in detail below:

[0045] The driving module is divided into pull-up driving and pull-down driving. Both pull-up driving and pull-down driving include several resistor elements, which are respectively connected to the power supply end, the ground end and the output end. The pull-up resistor and the pull-down resistor are coordinated. The function of the pull-up resistor is mainly to enhance the charging current capacity; the pull-down resistor is to enhance the discharge current capacity.

[0046] The resistance adjustment module of the present invention includes a plurality of adjustment resistance elements, which are essentially a resistor, and the adjustment resistance element is connected in parallel with the resistance element of the driving module. By controlling the number of adjustment resistance elements connected in parallel to the driving circuit, the total resistance of the entire driving circuit can be changed. The adjustment resistance element can be a crystal switch element, which can be turned on or off in response to a resistance adjustment signal; or it can be a fixed resistor, which is connected to the circuit by turning on the switch element connected in series with it.

[0047] The temperature sensor 5 of the present invention can be directly mounted on the chip or as a part of the chip. Since the temperature values ​​of the pull-up drive and the pull-down drive are basically the same, only one temperature sensor 5 can be provided. Of course, multiple temperature sensors can also be provided for high-precision requirements to independently sense the temperature of each module and be connected to the logic control circuit 6 respectively. The temperature sensor 5 of the present invention can adopt a variety of temperature sensors such as common resistance thermometers and thermistors. The present invention does not limit the type, number and installation method of the temperature sensor.

[0048] The logic control module 6 of the present invention can perform logic operations according to the temperature data of the temperature sensor. When the temperature value is detected to exceed the preset range, the logic control module determines the adjustment resistor element to be incorporated according to the value and sends a control signal. It can adopt a circuit that implements digital signal logic operations and operations based on the binary principle. Those skilled in the art know what specific circuit structure should be adopted to achieve the purpose of the present invention. The present invention will not repeat it here, nor will it be specifically limited.

[0049] In an exemplary embodiment, the driving module includes a main driving module and an auxiliary driving module. The main driving module includes a pull-up main driving module and a pull-down main driving module, the pull-up main driving module includes a plurality of pull-up main resistance elements, and the pull-down main driving module includes a plurality of pull-down main resistance elements; the auxiliary driving module includes a pull-up auxiliary driving module and a pull-down auxiliary driving module, the pull-up driving module includes a plurality of pull-up auxiliary resistance elements, and the pull-up auxiliary driving module includes a plurality of pull-down auxiliary resistance elements; wherein the pull-up main resistance element and the pull-up auxiliary resistance element are connected in parallel, and the pull-down main resistance element and the pull-down auxiliary resistance element are connected in parallel. The main driving module can be supplemented by the auxiliary driving module to improve the output driving capability.

[0050] For example, Figure 4 As shown, the pull-up main driving module 1 includes a pull-up main resistance element Rop, one end of the pull-up main resistance element Rop is connected in series with a PMOS tube, and the other end is connected to a controllable input / output port Pad, which serves as an output end. The gate of the PMOS tube receives a control signal PupMain, the drain is connected to the power supply end, and the source is connected to the resistance element Rop. Correspondingly, the pull-down main driving module 2 includes a pull-down main resistance element Ron, one end of the pull-down main resistance element Ron is connected in series with an NMOS tube, and the other end is connected to the controllable input / output port Pad, which serves as an output end. The gate of the NMOS tube receives a control signal PdnMain, the drain is connected to the ground end, and the source is connected to the resistance element Ron.

[0051] The pull-up auxiliary driving module 3 includes a pull-up auxiliary resistance element R1, R1 and Rop are connected in parallel, and the pull-down auxiliary driving module 4 includes a pull-down auxiliary resistance element R2, R2 and Ron are connected in parallel. Both R1 and R2 are controlled by switch elements.

[0052] In this exemplary embodiment, the switch element adopts a transistor switch element. Specifically, the pull-up auxiliary driving module 3 also includes N parallel pull-up transistor switch elements, the control ends of the N pull-up transistor switch elements are used to receive the corresponding N pull-up drive signals, the first ends of the N pull-up transistor switch elements are commonly connected to the power supply end, and the second ends are commonly connected to the pull-up auxiliary resistance element. The pull-down auxiliary driving module 4 also includes M parallel pull-down transistor switch elements, the control ends of the M pull-down transistor switch elements are used to receive the corresponding M pull-down drive signals, the first ends of the M pull-down transistor switch elements are commonly connected to the ground end, and the second ends are commonly connected to the pull-down auxiliary resistance element; wherein N and M are both positive integers.

[0053] The control end of each transistor switch element may be a gate, the first end may be a source, and the second end may be a drain; or, the control end of each transistor switch element may be a gate, the first end may be a drain, and the second end may be a source. For example, when the transistor switch element is an N-type transistor, the first end of the switch element is the drain, the second end of the switch element is the source, and the control end of the switch element is the gate. For another example, when the transistor switch element is a P-type transistor, the first end of the switch element is the source, the second end of the switch element is the drain, and the control end of the switch element is the gate.

[0054] For example, Figure 4As shown, in this exemplary embodiment, the pull-up auxiliary driving module 3 includes five parallel PMOS tubes, and the gates of the five PMOS tubes receive the corresponding control signals Zqpup[0], Zqpup[1], Zqpup[2], Zqpup[3], and Zqpup[4], respectively. Zqpup[4:0] represents five parallel PMOS tubes, and the corresponding control signals are used to control the conduction or shutdown of the corresponding PMOS tubes. The drains of the five PMOS tubes are commonly connected to the power supply terminal, and the sources are commonly connected to the pull-up auxiliary resistor element R1.

[0055] Correspondingly, the pull-down auxiliary driving module 4 includes five parallel NMOS tubes, and the gates of the five NMOS tubes receive the corresponding control signals Zqpup[0], Zqpdn[1], Zqpdn[2], Zqpdn[3], and Zqpdn[4], respectively. Zqpdn[4:0] represents five parallel NMOS tubes, and the corresponding control signals are used to control the conduction or shutdown of the corresponding NMOS tubes. The sources of the five NMOS tubes are commonly grounded, and the other ends are also commonly connected to the pull-down auxiliary resistor element R2.

[0056] By connecting several MOS tubes and resistors in series to form a driving resistor unit, different output driving resistor values ​​can be configured according to actual working needs. In this way, the number of series resistors can be greatly reduced while ensuring the output driving resistor size requirements and resistance linearity requirements, thereby reducing the chip area occupied by the output driving resistor and saving chip costs.

[0057] In this example implementation, the number of PMOS tubes and NMOS tubes of the pull-up auxiliary driving module 3 and the pull-down auxiliary driving module 4 is 5, that is, N and M are both 5. It can be known to those skilled in the art that, according to the initial design required by the resistor, N and M can also take other values, and N and M can be equal or unequal. The pull-up main resistance element, the pull-up auxiliary resistance element, the pull-down main resistance element and the pull-down auxiliary resistance element include but are not limited to Rop, R1, Ron and R2, and the number of resistors can be changed as needed. The number of resistors in the pull-up drive and the pull-down drive can be the same or different, and the resistance value of each resistor can also be the same or different, and can be set as needed, for example, it can be set to Ron=Rop=200, R1=R2=50.

[0058] In this example implementation, the resistance adjustment module includes a pull-up resistance adjustment module 5 and a pull-down resistance adjustment module 6, the logic control module 8 is connected to the temperature sensor 7, and the logic control module 8 includes P pull-up signal ports and Q pull-down signal ports, where P and Q are both positive integers.

[0059] The adjustment resistor element also adopts a transistor switch element, that is, the pull-up resistor adjustment module 5 includes P pull-up adjustment transistor switch elements connected in parallel with the pull-up transistor switch element, the control ends of the P pull-up adjustment transistor switch elements are connected one-to-one with the P pull-up signal ports, the first ends of the P pull-up adjustment transistor switch elements are connected to the power supply end, and the second ends are connected to the pull-up auxiliary resistor element; the pull-down resistor adjustment module 6 includes Q pull-down adjustment transistor switch elements connected in parallel with the pull-down transistor switch element, the control ends of the Q pull-up adjustment transistor switch elements are connected one-to-one with the Q pull-down signal ports, the first end of each pull-down adjustment transistor switch element is connected to the ground end, and the second end is connected to the pull-down auxiliary resistor element. By controlling the on or off of the pull-up adjustment transistor switch element, the resistance connected in parallel to the pull-up drive circuit is changed to achieve the adjustment of the pull-up drive resistance value. By controlling the on or off of the pull-down adjustment transistor switch element, the resistance connected in parallel to the pull-down drive circuit is changed to achieve the adjustment of the pull-down drive resistance value.

[0060] The configuration of the pull-up adjustment transistor switch element and the pull-down adjustment transistor switch element in this embodiment is similar to the transistor switch elements in the pull-up driving module and the pull-down driving module. It is only necessary to ensure that the transistor switch element type of the resistance adjustment module matches the transistor switch element of the driving module and the ports match each other.

[0061] For example, in this exemplary embodiment, P=Q=3, and the logic control module 8 includes 3 pull-up signal ports and 3 pull-down signal ports.

[0062] The pull-up resistor adjustment module 5 includes three parallel PMOS tubes, the gates of the three PMOS tubes receive the corresponding control signals Tpup[0], Tpup[1], and Tpup[2], respectively. Tpup[2:0] is used to represent the three parallel PMOS tubes, and the three PMOS tubes are all connected in parallel with the five PMOS tubes Zqpup[4:0] of the pull-up auxiliary driving module 3, that is, one end of the eight PMOS tubes is commonly connected to the power supply, and the other end is commonly connected to the pull-up auxiliary resistance element R1. The gates of the three PMOS tubes Tpup[2:0] are respectively connected to the three pull-up signal ports of the logic control module 8 in a one-to-one correspondence, and the corresponding control signals are sent through the respective ports to control the conduction or disconnection of the corresponding PMOS tubes, thereby changing the resistance value of the pull-up resistor adjustment module 5 itself, and then changing the resistance value of the pull-up drive as a whole.

[0063] Correspondingly, the pull-down auxiliary resistance adjustment module 4 includes three parallel NMOS tubes whose gates receive the corresponding control signals Tpdn[0], Tpdn[1], and Tpdn[2], respectively. Tpdn[2:0] is used to represent the three parallel NMOS tubes, which are all connected in parallel with the five NMOS tubes Zqpdn[4:0] of the pull-down drive module, one end of which is commonly grounded, and the other end is commonly connected to the pull-down auxiliary resistance element R2. The gates of the three NMOS tubes Tpdn[2:0] are respectively connected to the three pull-down signal ports of the logic control module 8 in a one-to-one correspondence, and the corresponding control signals are sent through the respective ports to control the conduction or disconnection of the corresponding NMOS tubes, thereby changing the resistance value of the pull-down resistance adjustment module 6 itself, and then changing the resistance value of the pull-down drive as a whole.

[0064] The logic control module 8 calculates the resistance values ​​of the current pull-up drive (pull-up main drive and pull-up auxiliary drive) and pull-down drive (pull-down main drive and pull-down auxiliary drive) according to the real-time temperature data sensed by the temperature sensor 7, compares them with the predetermined value (such as 240ohms), calculates the adjustment value of the pull-up drive and the pull-down drive resistance, determines the PMOS tube and NMOS tube to be incorporated, and outputs the resistance adjustment signal to the pull-up resistance adjustment module 5 and the pull-down resistance adjustment module 6. The six MOS tubes receive the corresponding pull-up or pull-down signals, and independently control their conduction and shutdown to change the overall resistance of the drive circuit to maintain it at the predetermined value (240ohms).

[0065] In this example implementation, the number of PMOS tubes and NMOS tubes of the pull-up resistor adjustment module 5 and the pull-down resistor adjustment module 6 are both 3, that is, P and Q are both 3. Those skilled in the art will know that, according to the initial design required by the resistor, P and Q may also take other values, and P and Q may be equal or unequal.

[0066] Correspondingly, the number of the pull-up signal ports and the pull-down signal ports of the logic control module 8 is also determined by the number of PMOS transistors and NMOS transistors in the pull-up resistor adjustment module 5 and the pull-down resistor adjustment module 6, as long as the ports can be connected to the MOS transistors in a one-to-one correspondence. Therefore, corresponding to the pull-up signal port and the pull-down signal port, P and Q can also take other values, and P and Q can be equal or unequal.

[0067] In addition, in this example implementation, whether it is a driving module or a resistance adjustment module, the resistance values ​​of each transistor switch element can be equal or unequal, so that different output driving resistance values ​​can be combined and configured according to actual working needs to adapt to more adjustment situations.

[0068] In this example implementation, the pull-up transistor switch element, the pull-down transistor switch element, the pull-up adjustment transistor switch element and the pull-down adjustment transistor switch element all use MOS tubes. Those skilled in the art will appreciate that the switch element may also be other switch elements, such as a triode.

[0069] The embodiment of the present invention further provides a temperature control output driving method. Taking the above circuit as an example, the method can be implemented according to the following steps:

[0070] S110, using the temperature sensor 7 to obtain the temperature value of the output drive circuit;

[0071] S210, determining the resistance value required by the driving circuit according to the temperature value;

[0072] S310, connecting a plurality of resistance elements in parallel to the driving circuit according to the required resistance value, so as to adjust the resistance value of the driving circuit.

[0073] The resistance value of the current drive circuit is determined by the temperature data sensed by the temperature sensor 7, and then the resistance of the entire output drive is adjusted by the resistance size of the incorporated drive module. Finally, the internal resistance of the output drive will be stabilized at the required resistance size without being affected by the temperature. The configured resistance value will also reach the required output drive resistance, weakening or eliminating the changes in the output drive resistance value caused by changes in temperature, process, and pressure, so that the output drive resistance is stabilized at the preset value, ensuring the stability of the chip performance.

[0074] In steps S210 and S310, a control logic may be used to calculate the resistance value of the current drive circuit according to the temperature value of the output drive circuit acquired by the temperature sensor 7, and then calculate the resistance element to be incorporated into the circuit to adjust the resistance of the entire output drive circuit.

[0075] In this exemplary embodiment, the resistor element incorporated into the circuit for adjusting the resistance value adopts a transistor switch element, that is, the pull-up transistor switch element is connected in parallel with a plurality of pull-up adjustment transistor switch elements, and the pull-down transistor switch element is connected in parallel with a plurality of pull-down adjustment transistor switch elements. The resistance value of the pull-up and pull-down drive circuits is adjusted by using the resistance value characteristics of the transistor switch element itself, and the transistor switch element can be conveniently selected and controlled. By controlling the on or off of the pull-up adjustment transistor switch element, the resistance connected in parallel to the pull-up drive circuit is changed to achieve the adjustment of the pull-up drive resistance value. By controlling the on or off of the pull-down adjustment transistor switch element, the resistance connected in parallel to the pull-down drive circuit is changed to achieve the adjustment of the pull-down drive resistance value.

[0076] The structures of the pull-up and pull-down driving circuits and the circuit structure for adjusting the resistance value refer to the relevant description in the temperature control output driving circuit of the present invention, and will not be described in detail here.

[0077] In this exemplary embodiment, the resistance value required by the driving circuit is converted into a switch control signal of the transistor switch element by a logic control circuit to control the resistance value of the driving circuit.

[0078] The logic control module 8 calculates the required resistance adjustment value of each driving circuit according to the temperature of the driving circuit, and generates switch control signals of the pull-up resistance adjustment module 5 and the pull-down resistance adjustment module 6, which are output by each port to control the signal to turn on or off the corresponding transistor switch, so that the resistance value of the parallel driving circuit changes, thereby achieving the purpose of controlling the overall resistance value of the driving module to be maintained at a predetermined value.

[0079] The method of the present invention can be repeatedly performed as the work progresses, and the execution interval can be set according to the needs to ensure that the resistance of the driving circuit is continuously adjusted so that it is always stable at a preset value.

[0080] The temperature-controlled output drive circuit and drive method of the above implementation mode are equipped with a resistance adjustment module for adjusting the resistance, and the current resistance value of the drive module is calculated by the temperature data sensed by the temperature sensor, and then the resistance of the resistance adjustment module is adjusted by the logic control module, so as to adjust the resistance of the entire output drive by incorporating the resistance of the drive module. On the one hand, the change of the output drive resistance value caused by the change of temperature, process, and pressure is weakened or eliminated, so that the output drive resistance is stabilized at a preset value, ensuring the stability of the chip performance; on the other hand, the method only needs to obtain the circuit temperature for real-time detection and adjustment, and the resistance value can be adjusted to the expected value within a large range, and the adjustment method is simple and accurate.

[0081] The embodiment of the present invention further provides a memory, comprising any of the temperature-controlled output drive circuits described above. The memory referred to in the present invention includes but is not limited to a dynamic random access memory, a double rate synchronous dynamic random access memory, etc. All memories including an output drive circuit can adopt the temperature-controlled output drive circuit of the present invention to ensure its driving capability and stabilize the chip performance.

[0082] Those skilled in the art will readily appreciate other embodiments of the present invention after considering the specification and practicing the invention disclosed herein. This application is intended to cover any variations, uses or adaptations of the present invention, which follow the general principles of the present invention and include common knowledge or customary techniques in the art that are not disclosed by the present invention. The specification and examples are intended to be exemplary only, and the true scope and spirit of the present invention are indicated by the appended claims.

Claims

1. A temperature control output drive circuit, characterized in that: include: A driving module, comprising a plurality of resistance elements, wherein the resistance elements are connected to the power supply end and the output end; the driving module receives an output driving signal; A resistance adjustment module, comprising a plurality of adjustment resistance elements, wherein the adjustment resistance elements are connected to the power supply end and the output end, and are also connected in parallel with the resistance elements of the driving module; The resistance adjustment module is turned on or off in response to the resistance adjustment signal to adjust the resistance value of the driving circuit; the driving module and the resistance adjustment module are both electrically connected before the output end; A temperature sensor, used for sensing the temperature of the output drive circuit; The logic control module is connected to the temperature sensor and is used to output a resistance adjustment signal to the resistance adjustment module according to the temperature data of the temperature sensor.

2. The temperature control output drive circuit according to claim 1, characterized in that: The driving module includes a main driving module and an auxiliary driving module; The main driving module includes a pull-up main driving module and a pull-down main driving module, wherein the pull-up main driving module includes a plurality of pull-up main resistance elements, and the pull-down main driving module includes a plurality of pull-down main resistance elements; The auxiliary driving module includes a pull-up auxiliary driving module and a pull-down auxiliary driving module, wherein the pull-up auxiliary driving module includes a plurality of pull-up auxiliary resistance elements, and the pull-down auxiliary driving module includes a plurality of pull-down auxiliary resistance elements; The pull-up main resistance element and the pull-up auxiliary resistance element are connected in parallel, and the pull-down main resistance element and the pull-down auxiliary resistance element are connected in parallel.

3. The temperature control output drive circuit according to claim 2, characterized in that: The pull-up auxiliary driving module further includes N pull-up transistor switch elements connected in parallel, wherein the control ends of the N pull-up transistor switch elements are used to receive corresponding N pull-up driving signals, the first ends of the N pull-up transistor switch elements are commonly connected to the power supply end, and the second ends are commonly connected to the pull-up auxiliary resistance element; The pull-down auxiliary driving module further includes M pull-down transistor switch elements connected in parallel, wherein control ends of the M pull-down transistor switch elements are used to receive corresponding M pull-down driving signals, and first ends of the M pull-down transistor switch elements are commonly connected to the ground end, and second ends are commonly connected to the pull-down auxiliary resistance element; Wherein, N and M are both positive integers.

4. The temperature control output drive circuit according to claim 3, characterized in that: The resistance adjustment module includes a pull-up resistance adjustment module and a pull-down resistance adjustment module, and the adjustment resistance element is a transistor switch element; the logic control module includes P pull-up signal ports and Q pull-down signal ports, and P and Q are both positive integers; The pull-up resistor adjustment module includes P pull-up adjustment transistor switch elements connected in parallel with the pull-up transistor switch element, the control ends of the P pull-up adjustment transistor switch elements are connected to the P pull-up signal ports in a one-to-one correspondence, the first ends of the P pull-up adjustment transistor switch elements are commonly connected to the power supply end, and the second ends are commonly connected to the pull-up auxiliary resistance element; The pull-down resistance adjustment module includes Q pull-down adjustment transistor switch elements connected in parallel with the pull-down transistor switch element, the control ends of the Q pull-up adjustment transistor switch elements are connected one-to-one with the Q pull-down signal ports, the first ends of the Q pull-down adjustment transistor switch elements are commonly connected to the ground end, and the second ends are commonly connected to the pull-down auxiliary resistance element.

5. The temperature control output drive circuit according to claim 4, characterized in that: The pull-up transistor switch element and the pull-up adjustment transistor switch element include PMOS transistors, and the pull-down transistor switch element and the pull-down adjustment transistor switch element include NMOS transistors.

6. The temperature control output drive circuit according to any one of claims 1 to 5, characterized in that: The resistance values ​​of the pull-up transistor switch element, the pull-down transistor switch element, the pull-up adjustment transistor switch element and the pull-down adjustment transistor switch element are equal or unequal.

7. A method for temperature controlling an output drive circuit, characterized in that: include: Using a temperature sensor to obtain the temperature value of the output drive circuit; Determining a resistance value required by the driving circuit according to the temperature value; Connecting a plurality of adjusting resistance elements in parallel to the driving circuit according to the required resistance value to adjust the resistance value of the driving circuit, wherein the adjusting resistance element and the driving circuit are both electrically connected before the corresponding output terminal of the driving circuit; The driving circuit includes a plurality of resistance elements, the resistance elements are connected to a power supply terminal and an output terminal, the adjustment resistance element is connected to the power supply terminal and the output terminal, and is connected in parallel with the resistance element of the driving module.

8. The method for temperature controlling an output drive circuit according to claim 7, characterized in that: The adjustment resistance element is a transistor switch element.

9. The method for temperature controlling an output drive circuit according to claim 8, characterized in that: The resistance value required by the driving circuit is converted into a switch control signal of the transistor switch element through a logic control circuit to control the resistance value of the driving circuit.

10. A memory comprising the temperature controlled output drive circuit according to any one of claims 1 to 6.

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