Photoelectric sensor and display panel

A photoelectric sensor and display panel technology, applied in the field of photoelectric sensing, can solve the problems of small photocurrent and low photoelectric conversion efficiency, and achieve the effect of increasing photocurrent, improving photoelectric conversion efficiency, and prolonging the accumulation time

CN111162131AInactive Publication Date: 2020-05-15YUNGU GUAN TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Publication Date
2020-05-15
Estimated Expiration
Not applicable · inactive patent

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Abstract

The embodiment of the invention discloses a photoelectric sensor and a display panel. The photoelectric sensor comprises a photodiode, the photodiode comprises a first electrode, a PIN structure layerand a second electrode, and the PIN structure layer comprises a P-type semiconductor layer, an N-type semiconductor layer and an I-type semiconductor layer between the P-type semiconductor layer andthe N-type semiconductor layer. The first electrode is electrically connected with the P-type semiconductor layer, and the second electrode is electrically connected with the N-type semiconductor layer. The photoelectric sensor also comprises a first structure layer and a second structure layer which are at least located at the different sides of the photodiode, the first structure layer comprisesa structure layer with light transmitting and light reflecting effects, and the second structure layer comprises a light reflecting structure layer. According to the technical scheme, the light action time of the photodiode can be prolonged, so that the photogenerated current accumulation time is prolonged, the photocurrent is increased, and the photoelectric conversion efficiency is improved.
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Description

technical field

[0001] Embodiments of the present invention relate to the technical field of photoelectric sensing, and in particular, to a photoelectric sensor and a display panel. Background technique

[0002] As a photodetector, the photoelectric sensor can detect the light power incident on it and complete the conversion of the photoelectric signal. It is widely used in fingerprint recognition and other fields.

[0003] Existing photosensors usually include a photodiode, and the structure of the photodiode is usually a layer of intrinsic semiconductor (referred to as I) with a very low doping concentration in a PN junction, that is, a PIN photosensor.

[0004] However, existing photoelectric sensors have the problems of low photoelectric conversion efficiency and small photocurrent. Contents of the invention

[0005] The invention provides a photoelectric sensor and a display panel to improve the photoelectric conversion efficiency of the photoelectric sensor and incr...

Examples

Embodiment Construction

[0031] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, but not to limit the present invention. In addition, it should be noted that, for the convenience of description, only some structures related to the present invention are shown in the drawings but not all structures.

[0032] As mentioned in the background art, existing photoelectric sensors have the problems of low photoelectric conversion efficiency and small photocurrent. The inventor found that the reason for the above problems is that the photoelectric sensor is a device that converts light into electricity, and the longer the light stays in the photoelectric sensor, the longer the light action time on the photodiode in the photoelectric sensor is. The higher the photoelectric conversion efficiency, the larger the photocurr...