Magnetic storage devices

Abstract

A magnetic memory device includes: a first conductive line extending along a first direction on a substrate; a first magnetic pattern on the first conductive line, the first magnetic pattern including a first portion and a second portion having different thicknesses; and a second conductive line on the first magnetic pattern and extending along a second direction intersecting the first direction.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] The entire disclosure of Korean Patent Application No. 10-2018-0139731, entitled “Magnetic Memory Device”, filed in the Korean Intellectual Property Office on November 14, 2018, is incorporated herein by reference in its entirety. Technical Field

[0003] Embodiments relate to a semiconductor device, and more particularly, to a magnetic memory device including a magnetic tunnel junction. Background Art

[0004] Due to the demand for high-speed and / or low-power electronic devices, there is also a demand for high-speed and / or low-voltage semiconductor memory devices used therein. As semiconductor memory devices that can meet these requirements, magnetic memory devices have been developed. Magnetic memory devices can be used as next-generation semiconductor memory devices because they have high-speed and / or non-volatile characteristics.

[0005] Typically, a magnetic memory device may include a magnetic tunnel junction (MTJ). A magnetic tunnel junction may include two magnetic layers and an insulating layer disposed between the two magnetic layers. The resistance value of the magnetic tunnel junction may be changed according to the magnetization directions of the two magnetic layers. For example, when the magnetization directions of the two magnetic layers are antiparallel to each other, the magnetic tunnel junction may have a relatively high resistance value. When the magnetization directions of the two magnetic layers are parallel to each other, the magnetic tunnel junction may have a relatively low resistance value. A magnetic memory device may read / write data using the difference in resistance values ​​of the magnetic tunnel junction. With the development of the electronics industry, the demand for highly integrated and / or low-power magnetic memory devices is increasing. Therefore, various studies are being conducted to meet these demands. Summary of the invention

[0006] In one aspect, a magnetic memory device may include: a first conductive line extending along a first direction on a substrate; a first magnetic pattern on the first conductive line; and a second conductive line disposed on the first magnetic pattern and extending along a second direction intersecting the first direction. The first magnetic pattern may include a first portion and a second portion having different thicknesses.

[0007] In one aspect, a magnetic memory device may include: a first conductive line extending along a first direction on a substrate, the first conductive line having a recessed portion recessed from a top surface of the first conductive line; a magnetic pattern disposed on the first conductive line and filling the recessed portion; and a second conductive line on the magnetic pattern and extending along a second direction intersecting the first direction.

[0008] In one aspect, a magnetic memory device may include: a first conductive line extending along a first direction on a substrate; a first magnetic pattern on the first conductive line; and a second conductive line disposed on the first magnetic pattern and extending along a second direction intersecting the first direction. When viewed in a plan view, the center of the first magnetic pattern may deviate in the second direction from the center of a first portion of the first conductive line vertically overlapping the second conductive line. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Features will become apparent to those skilled in the art by describing in detail exemplary embodiments with reference to the accompanying drawings, in which:

[0010] Figure 1 A plan view of a magnetic memory device according to some embodiments is shown.

[0011] Figure 2A Shown along Figure 1 Cross-sectional view along line II′.

[0012] Figure 2B An enlarged view of the first magnetic pattern and the first conductive line is shown.

[0013] Figure 2C An enlarged view of the first conductive line and the magnetic tunnel junction pattern is shown.

[0014] Figure 3 Shown along Figure 1 Cross-sectional view along line II-II′.

[0015] Figure 4 According to some embodiments, Figure 1 A cross-sectional view of the magnetic memory device is shown taken along line II′.

[0016] Figure 5 According to some embodiments, Figure 1 A cross-sectional view of the magnetic memory device is shown taken along line II′.

[0017] Figure 6 According to other embodiments, Figure 1 A cross-sectional view of the magnetic memory device is shown taken along line II′.

[0018] Figure 7 According to other embodiments, Figure 1 A cross-sectional view of the magnetic memory device is shown taken along line II′.

[0019] Figure 8 A plan view of a magnetic memory device according to some embodiments is shown.

[0020] Fig. 9 Shown along Figure 8Cross-sectional view along line III-III′.

[0021] Fig.10 According to other embodiments, Figure 8 A cross-sectional view of the magnetic memory device is shown taken along line III-III′.

[0022] Fig.11 , Fig.16 and Fig.19 Plan views illustrating stages in a method of manufacturing a magnetic memory device according to some embodiments.

[0023] Fig.12 , Fig.14 , Fig.17 and Fig. 20 Shown along Fig.11 , Fig.16 and Fig.19 Cross-sectional view along line II′.

[0024] Fig.13 , Fig.15 , Fig.18 and Fig.21 Shown along Fig.11 , Fig.16 and Fig.19 Cross-sectional view along line II-II′. DETAILED DESCRIPTION

[0025] Figure 1 is a plan view illustrating a magnetic memory device according to some embodiments. Figure 2A According to some embodiments, Figure 1 The cross-sectional view of the magnetic memory device is shown by taking line II′ of FIG. Figure 2B is an enlarged view of the first magnetic pattern and the first conductive line. Figure 2C is an enlarged view of the first conductive line and the magnetic tunnel junction pattern. Figure 3 According to some embodiments, Figure 1 A cross-sectional view of the magnetic memory device is shown by taking the line II-II′ of FIG.

[0026] refer to Figure 1 , Figure 2A and Figure 3 , the first conductive line 110 may be disposed on a substrate 100. The substrate 100 may include a semiconductor substrate. The semiconductor substrate may include, for example, silicon (Si), silicon on insulator (SOI), silicon germanium (SiGe), germanium (Ge), or gallium-arsenic (GaAs). A selection element may be disposed in the substrate 100. The selection element may be, for example, a field effect transistor or a diode.

[0027] The first conductive line 110 may extend in the first direction X on the top surface of the substrate 100. The first conductive line 110 may have a linear shape. The first conductive line 110 may have a recessed portion RP recessed from the top surface 112 of the first conductive line 110. The bottom surface of the recessed portion RP may be located at a level between the top surface 112 and the bottom surface of the first conductive line 110. For example, referring to Figure 1 , Figure 2A and Figure 3 , the recessed portion RP may extend through the entire width of the first conductive line 110 along the first direction X. In some embodiments, electrodes may be connected to both ends of the first conductive line 110 to allow current to flow in the first conductive line 110 .

[0028] The first conductive line 110 may include a heavy metal or a material doped with a heavy metal. For example, the first conductive line 110 may include at least one of 'A' and 'M' doped with 'B'. 'A' may include, for example, yttrium (Y), zirconium (Zr), niobium (Nb), molybdenum (Mo), technetium (Tc), ruthenium (Ru), rhodium (Rh), palladium (Pd), cadmium (Cd), indium (In), antimony (Sb), tellurium (Te), hafnium (Hf), tantalum (Ta, including high-resistance amorphous β-Ta), tungsten (W), rhenium (Re), osmium (Os), iridium (Ir), platinum (Pt), gold (Au), mercury (Hg), thallium (T1), lead (Pb), bismuth (Bi), polonium (Po), astatine (At) and / or any combination thereof. 'B' may include, for example, vanadium (V), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), phosphorus (P), sulfur (S), zinc (Zn), gallium (Ga), germanium (Ge), arsenic (As), selenium (Se), yttrium (Y), zirconium (Zr), niobium (Nb), molybdenum (Mo), technetium (Tc), ruthenium (Ru), rhodium (Rh), palladium (Pd), silver (Ag), cadmium (Cd), indium (In), antimony (Sb), tellurium (Te), iodine (I), lutetium (Lu), At least one of hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), osmium (Os), iridium (Ir), platinum (Pt), gold (Au), mercury (Hg), thallium (Tl), lead (Pb), bismuth (Bi), polonium (Po), astatine (At), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm) and ytterbium (Yb). 'M' may include, for example, aluminum (Al), titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), copper (Cu), zinc (Zn), silver (Ag), hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), platinum (Pt), gold (Au), mercury (Hg), lead (Pb), silicon (Si), gallium (Ga), gallium-manganese (GaMn) or gallium-arsenic (GaAs). For example, the first conductive line 110 may include copper (Cu) doped with iridium (Ir) and / or copper (Cu) doped with bismuth (Bi).

[0029] The first interlayer insulating layer 120 may be disposed on the top surface of the substrate 100 and located on both sides of the first conductive line 110. Figure 3 The first interlayer insulating layer 120 may cover the sidewalls of the first conductive line 110. The top surface of the first interlayer insulating layer 120 may be located at a position lower than the recessed portion RP ( Figure 3) at a higher level than the bottom surface of the first conductive line 110, and may be located at the same level as the top surface 112 of the first conductive line 110. For example, the first interlayer insulating layer 120 may include an oxide layer or a nitride layer. The oxide layer may be, for example, a silicon oxide layer, a magnesium oxide layer, a tantalum oxide layer, or a hafnium oxide layer. The nitride layer may be, for example, a titanium nitride layer, a tantalum nitride layer, or a tungsten nitride layer.

[0030] The second conductive line 310 may be disposed on the first conductive line 110. The second conductive line 310 may extend on the first conductive line 110 in a second direction Y intersecting the first direction X. The second conductive line 310 may include at least one of a metal (eg, copper) and a conductive metal nitride. The second conductive line 310 may serve as a bit line.

[0031] The magnetic tunnel junction pattern MTJ may be disposed between the first conductive line 110 and the second conductive line 310. The magnetic tunnel junction pattern MTJ may include a first magnetic pattern 210, a tunnel barrier pattern 220, and a second magnetic pattern 230. The first magnetic pattern 210 may be disposed between the first conductive line 110 and the second conductive line 310. The tunnel barrier pattern 220 may be disposed between the first magnetic pattern 210 and the second conductive line 310. The second magnetic pattern 230 may be disposed between the tunnel barrier pattern 220 and the second conductive line 310.

[0032] The following will refer to Figure 2B The first magnetic pattern 210 is described. Figure 2B Shows Figure 2A A magnified view of the bottom of the magnetic tunnel junction pattern MTJ.

[0033] Reference Figure 2A and Figure 2B, the first magnetic pattern 210 may be disposed on the top surface 112 of the first conductive line 110 and in the recessed portion RP of the first conductive line 110. The width W1 of the recessed portion RP in the first direction X may be smaller than the width W2 of the first magnetic pattern 210 in the first direction X (W1<W2). The first magnetic pattern 210 may have a first side wall 211 and a second side wall 213, which are opposite to each other in the first direction X. The first magnetic pattern 210 may include a first portion P1 adjacent to the first side wall 211, a second portion P2 adjacent to the second side wall 213, and a third portion P3 between the first portion P1 and the second portion P2. The third portion P3 may be disposed in the recessed portion RP of the first conductive line 110. The first portion P1 and the second portion P2 may be disposed on the top surface 112 of the first conductive line 110. The thickness T1 of the first portion P1 in the third direction Z may be substantially equal to the thickness T2 of the second portion P2 in the third direction Z (T1=T2). The thickness T3 of the third portion P3 in the third direction Z may be greater than the thickness T1 of the first portion P1 and the thickness T2 of the second portion P2 (T3>T1 and T3>T2). Figure 2A As shown, the upper surfaces of the first to third portions P1 to P3 may be flush with each other. When viewed in a cross-sectional view, the first magnetic pattern 210 may have a T-shape. The first magnetic pattern 210 may include a free layer having a variable magnetization direction. Note that the first to third portions P1 to P3 are integrated with each other and define a single seamless magnetic pattern, and the division of the whole into parts is only for ease of description.

[0034] In some embodiments, the first magnetic pattern 210 may include, for example, a vertical magnetic material (eg, CoFeTb, CoFeGd, or CoFeDy), a 0 At least one of a perpendicular magnetic material having a structure, and a CoPt alloy having a hexagonal close-packed (HCP) lattice structure and a perpendicular magnetic structure. 0 The vertical magnetic material of the structure may include, for example, a L1 0 FePt with L1 0 FePd with L1 0 CoPd structure and L1 0 The vertical magnetic structure may include at least one of (Co / Pt)n, (CoFe / Pt)n, (CoFe / Pd)n, (Co / Pd)n, (Co / Ni)n, (CoNi / Pt)n, (CoCr / Pt)n, and (CoCr / Pd)n, where "n" represents the number of double layers.

[0035] In some embodiments, the first magnetic pattern 210 may include a horizontal magnetic material. The horizontal magnetic material may include, for example, a ferromagnetic material. For example, the ferromagnetic material may include CoFeB, Fe, Co, Ni, Gd, Dy, CoFe, NiFe, MnAs, MnBi, MnSb, CrO 2 、MnOFe 2 O 3 ,FeOFe 2 O 3 、NiOFe 2 O 3 、CuOFe 2 O 3 MgOFe 2 O 3 , EuO and Y 3 Fe 5 O 12 At least one of .

[0036] Reference Figure 2B and Figure 2C , even if the first magnetic pattern 210 includes a vertical magnetic material or a horizontal magnetic material, the magnetic anisotropy of the first magnetic pattern 210 may change according to its thickness (e.g., in the third direction Z). For example, when the thickness of the first magnetic pattern 210 is large, the first magnetic pattern 210 may have horizontal magnetic anisotropy. When the thickness of the first magnetic pattern 210 is small, the first magnetic pattern 210 may have vertical magnetic anisotropy. The first magnetic pattern 210 may have both vertical magnetic anisotropy and horizontal magnetic anisotropy. For example, the magnetization direction E1 of the first portion P1 and the second portion P2 of the first magnetic pattern 210 may be substantially perpendicular to the top surface of the substrate 100 (i.e., in the third direction Z), and the magnetization direction E2 of the third portion P3 of the first magnetic pattern 210 may be substantially parallel to the top surface of the substrate 100 (e.g., in the X direction).

[0037] In other words, the first portion P1 and the second portion P2 of the first magnetic pattern 210 may have a smaller thickness and a perpendicular magnetic anisotropy, and the third portion P3 of the first magnetic pattern 210 may have a larger thickness and a horizontal magnetic anisotropy. Therefore, the net magnetization direction E3 of the first magnetic pattern 210 may be tilted (D direction) at an angle (θ) relative to a direction parallel to the top surface of the substrate 100 (e.g., the X direction). The angle (θ) may be greater than 0 degrees and less than 90 degrees. According to some embodiments, when the net magnetization direction E3 of the first magnetic pattern 210 is tilted at an angle (θ), the first magnetic pattern 210 may be quickly switched by a low switching current.

[0038] In some embodiments, the first conductive line 110 may include a first portion PA1 and a second portion PA2 vertically overlapping the first portion P1 and the second portion P2 of the first magnetic pattern 210, respectively, and a third portion PA3 vertically overlapping the third portion P3 of the first magnetic pattern 210. The thickness Ta of the first portion PA1 and the second portion PA2 of the first conductive line 110 may be greater than the thickness Tb of the third portion PA3 of the first conductive line 110 (Ta>Tb). According to some embodiments, when a certain current flows through the first conductive line 110, the current may be more concentrated in the first portion PA1 and the second portion PA2 of the first conductive line 110 than in the third portion PA3 of the first conductive line 110. Therefore, the magnetization direction (or magnetic moment) of the first portion P1 and the second portion P2 of the first magnetic pattern 210 adjacent to the first portion PA1 and the second portion PA2 of the first conductive line 110 may be switched faster and / or more than the magnetization direction (or magnetic moment) of the third portion P3 of the first magnetic pattern 210. As a result, when the same current flows, the first magnetic pattern 210 may be switched faster by the first conductive line 110 having different thicknesses than by the conductive line having a uniform thickness.

[0039] The tunnel barrier pattern 220 may be disposed between the first magnetic pattern 210 and the second magnetic pattern 230. For example, the tunnel barrier pattern 220 may include at least one of magnesium oxide, titanium oxide, aluminum oxide, magnesium-zinc oxide, and magnesium-boron oxide.

[0040] The second magnetic pattern 230 may include a reference layer having a magnetization direction E4 fixed in one direction. For example, the magnetization direction E4 may be substantially perpendicular to the top surface of the substrate 100 (ie, in the third direction Z). In some embodiments, the second magnetic pattern 230 may include a vertical magnetic material (e.g., CoFeTb, CoFeGd, or CoFeDy), a reference layer having a magnetization direction E4 fixed in one direction. For example, the magnetization direction E4 may be substantially perpendicular to the top surface of the substrate 100 (ie, in the third direction Z). 0 At least one of a perpendicular magnetic material with a structure, a CoPt alloy with a hexagonal close-packed (HCP) lattice structure and a perpendicular magnetic structure. 0 The vertical magnetic material of the structure may include L1 0 FePt with L1 0 FePd with L1 0 CoPd structure and L1 0 The vertical magnetic structure may include at least one of (Co / Pt)n, (CoFe / Pt)n, (CoFe / Pd)n, (Co / Pd)n, (Co / Ni)n, (CoNi / Pt)n, (CoCr / Pt)n, and (CoCr / Pd)n, where "n" represents the number of double layers.

[0041] In some embodiments, the second magnetic pattern 230 may include a horizontal magnetic material. The horizontal magnetic material may include, for example, a ferromagnetic material.

[0042] Return to reference Figure 2A The metal pattern 240 may be disposed between the magnetic tunnel junction pattern MTJ and the second conductive line 310. For example, the metal pattern 240 may include at least one of a metal (eg, Ta, W, Ru, or Ir) and a conductive metal nitride (eg, TiN). Figure 2A and Figure 3 As shown, the metal pattern 240 may have the same width as the magnetic tunnel junction pattern MTJ in each of the first direction X and the second direction Y, and may completely overlap the top of the magnetic tunnel junction pattern MTJ.

[0043] The second interlayer insulating layer 250 may be disposed on the top surface 112 of the first conductive line 110 and the top surface of the first interlayer insulating layer 120. The second interlayer insulating layer 250 may cover the sidewalls of the magnetic tunnel junction pattern MTJ and the metal pattern 240. For example, the second interlayer insulating layer 250 may include an oxide layer or a nitride layer. The oxide layer may be, for example, a silicon oxide layer, a magnesium oxide layer, a tantalum oxide layer, or a hafnium oxide layer. The first conductive line 110, the magnetic tunnel junction pattern MTJ, and the second conductive line 310 may constitute a magnetic memory element.

[0044] Figure 4 According to some embodiments, Figure 1 The cross-sectional view of the magnetic memory device is shown by taking line II′ of FIG.

[0045] Reference Figure 4 , the first magnetic pattern 210a may be disposed in the recessed portion RP of the first conductive line 110a. The width W1 of the recessed portion RP of the first conductive line 110a may be substantially equal to the width W2 of the first magnetic pattern 210a. In other words, the first magnetic pattern 210a may not be disposed on the top surface 112 of the first conductive line 110a. The thickness of the first magnetic pattern 210a may gradually increase from the first side wall 211 of the first magnetic pattern 210a to the second side wall 213. The bottom surface 215 of the first magnetic pattern 210a may be inclined. The thickness t of a portion PA of the first conductive line 110a overlapping the first magnetic pattern 210a may gradually decrease in a direction in which the thickness of the first magnetic pattern 210a gradually increases.

[0046] The first magnetic pattern 210a may include a first portion P1 adjacent to the first sidewall 211 of the first magnetic pattern 210a and a second portion P2 adjacent to the second sidewall 213 of the first magnetic pattern 210a. In some embodiments, a maximum thickness T1 of the first portion P1 may be less than a maximum thickness T2 of the second portion P2 (T1<T2). In some embodiments, the first magnetic pattern 210a may have a trapezoidal shape when viewed in a cross-sectional view.

[0047] Figure 5 According to some embodiments, Figure 1 The cross-sectional view of the magnetic memory device is shown by taking line II′ of FIG.

[0048] Reference Figure 5 , the first magnetic pattern 210b may be disposed in the recessed portion RP of the first conductive line 110b. The width W1 of the recessed portion RP of the first conductive line 110b may be substantially equal to the width W2 of the first magnetic pattern 210b (W1=W2). In other words, the first magnetic pattern 210b may not be disposed on the top surface 112 of the first conductive line 110b. The thickness of the first magnetic pattern 210b may gradually increase and then gradually decrease from the first sidewall 211 of the first magnetic pattern 210b to the second sidewall 213. In some embodiments, the first magnetic pattern 210b may include a first portion P1 adjacent to the first sidewall 211 of the first magnetic pattern 210b, a second portion P2 adjacent to the second sidewall 213 of the first magnetic pattern 210b, and a third portion P3 between the first portion P1 and the second portion P2. The maximum thickness T1 of the first portion P1 of the first magnetic pattern 210b may be substantially equal to the maximum thickness T2 of the second portion P2 of the first magnetic pattern 210b (T1=T2). The maximum thickness T3 of the third portion P3 of the first magnetic pattern 210 may be greater than the maximum thickness T1 of the first portion P1 and the maximum thickness T2 of the second portion P2 of the first magnetic pattern 210 (T3>T1 and T3>T2). The first magnetic pattern 210b may have the maximum thickness in the third portion P3, and may have the minimum thickness in the first portion P1 and the second portion P2. The lower portion of the first magnetic pattern 210b may be tapered.

[0049] The thickness t of the portion PA of the first conductive line 110b overlapping the first magnetic pattern 210b may gradually decrease and then gradually increase in a direction in which the thickness of the first magnetic pattern 210b gradually increases and then gradually decreases. The first conductive line 110b may have a minimum thickness in a portion of the first conductive line 110b vertically overlapping the third portion P3 of the first magnetic pattern 210b. The first conductive line 110b may have a maximum thickness in a portion of the first conductive line 110b vertically overlapping the first portion P1 and the second portion P2 of the first magnetic pattern 210b. In some embodiments, the recessed portion RP of the first conductive line 110b may be tapered.

[0050] Figure 6 According to some embodiments, Figure 1 The cross-sectional view of the magnetic memory device is shown by taking line II′ of FIG.

[0051] Reference Figure 6 , the first magnetic pattern 210c may include a first portion P1 disposed on the top surface 112 of the first conductive line 110c and a second portion P2 disposed in a recessed portion RP of the first conductive line 110c. The width W1 of the recessed portion RP may be smaller than the width W2 of the first magnetic pattern 210c (W1<W2). The width of the second portion P2 of the first magnetic pattern 210c may correspond to the width W1 of the recessed portion RP, and the width W1 of the second portion P2 of the first magnetic pattern 210c may be greater than the width W3 of the first portion P1 of the first magnetic pattern 210c (W1>W3). The thickness T1 of the first portion P1 may be smaller than the thickness T2 of the second portion P2 (T1<T2). In some embodiments, the first magnetic pattern 210c may have an inverted L-shape when viewed in a cross-sectional view.

[0052] The first conductive line 110c may include a first portion PA1 vertically overlapping the first portion P1 of the first magnetic pattern 210c and a second portion PA2 vertically overlapping the second portion P2 of the first magnetic pattern 210c. A thickness t1 of the first portion PA1 of the first conductive line 110c may be greater than a thickness t2 of the second portion PA2 of the first conductive line 110c.

[0053] Figure 7 According to some embodiments, Figure 1 The cross-sectional view of the magnetic memory device is shown by taking line II′ of FIG.

[0054] refer to Figure 7 , can be omitted Figure 2A In this case, the metal pattern 240 may be in direct contact with the top surface of the first magnetic pattern 210.

[0055] Figure 8 is a plan view illustrating a magnetic memory device according to some embodiments. Fig. 9 According to some embodiments, Figure 8 A cross-sectional view of the magnetic memory device is shown by taking the line III-III′ of FIG.

[0056] refer to Figure 8 and Fig. 9 , the magnetic memory device may include a first magnetic memory element MD1 and a second magnetic memory element MD2. The first magnetic memory element MD1 may have a reference Figures 1 to 7One of the structures described. For example, the first magnetic memory element MD1 may include a first conductive wire 110, a first magnetic tunnel junction pattern MTJ1, and a second conductive wire 310, and the second magnetic memory element MD2 may include a first conductive wire 110, a second magnetic core tunnel junction pattern MTJ2, and a third conductive wire 320. The first magnetic tunnel junction pattern MTJ1 and the second magnetic tunnel junction pattern MTJ2 may be disposed on the first conductive wire 110. The first magnetic tunnel junction pattern MTJ1 and the second magnetic tunnel junction pattern MTJ2 may be connected to the first conductive wire 110 in common. The second conductive wire 310 may be disposed on the first magnetic tunnel junction pattern MTJ1, and the third conductive wire 320 may be disposed on the second magnetic tunnel junction pattern MTJ2. The second conductive wire 310 may extend along the second direction Y on the first magnetic tunnel junction pattern MTJ1, and the third conductive wire 320 may extend along the second direction Y on the second magnetic tunnel junction pattern MTJ2.

[0057] In some embodiments, the first conductive line 110 may include a first vertical portion VP1 vertically overlapping the second conductive line 310 and a second vertical portion VP2 vertically overlapping the third conductive line 320. When viewed in a plan view, a center C1 of the first vertical portion VP1 of the first conductive line 110 may overlap with a center C2 of the first magnetic tunnel junction pattern MTJ1. When viewed in a plan view, a center C3 of the second vertical portion VP2 of the first conductive line 110 may not overlap with a center C4 of the second magnetic tunnel junction pattern MTJ2. For example, the center C4 of the second magnetic tunnel junction pattern MTJ2 may deviate from the center C3 of the second vertical portion VP2 in the second direction Y.

[0058] In the following, we will mainly refer to Fig. 9 The second magnetic memory element MD2 is described in detail.

[0059] Reference Fig. 9 , the thickness TH1 of the first interlayer insulating layer 120 in the third direction Z may be greater than the thickness Tc of the second vertical portion VP2 of the first conductive line 110 vertically overlapping with the second magnetic tunnel junction pattern MTJ2 (or the third conductive line 320) in the third direction Z. The top surface of the first interlayer insulating layer 120 may be located at a higher level than the top surface of the second vertical portion VP2 of the first conductive line 110. In some embodiments, the thickness Tc of the second vertical portion VP2 of the first conductive line 110 may be substantially uniform along the second direction Y. The second magnetic tunnel junction pattern MTJ2 may be disposed between the first conductive line 110 and the third conductive line 320. The second magnetic tunnel junction pattern MTJ2 may include a first magnetic pattern 210d, a tunnel barrier pattern 220, and a second magnetic pattern 230 sequentially stacked on the first conductive line 110.

[0060] The first magnetic pattern 210d may be disposed on the second vertical portion VP2 of the first conductive line 110. The first magnetic pattern 210d may include a first portion P1 vertically overlapping the first interlayer insulating layer 120 and a second portion P2 vertically overlapping the second vertical portion VP2 of the first conductive line 110. A bottom surface of the first portion P1 of the first magnetic pattern 210d may be in contact with the first interlayer insulating layer 120, and a bottom surface of the second portion P2 of the first magnetic pattern 210d may be in contact with the first conductive line 110. The first magnetic pattern 210d may expose a portion of a top surface of the second vertical portion VP2 of the first conductive line 110. A thickness T1 of the first portion P1 of the first magnetic pattern 210d may be less than a thickness T2 of the second portion P2 of the first magnetic pattern 210d (T1<T2). When viewed in a cross-sectional view, the first magnetic pattern 210d may have an inverted L-shape.

[0061] According to some embodiments, the perpendicular magnetic anisotropy in the first portion P1 of the first magnetic pattern 210d in contact with the first interlayer insulating layer 120 may be greater than the perpendicular magnetic anisotropy in the second portion P2 of the first magnetic pattern 210d in contact with the first conductive line 110. Therefore, the total perpendicular magnetic anisotropy of the first magnetic pattern 210d of the second magnetic tunnel junction pattern MTJ2 may be greater than the total perpendicular magnetic anisotropy of the first magnetic pattern of the magnetic tunnel junction pattern in which the first magnetic pattern is in contact with only the first conductive line 110. For example, the perpendicular magnetic anisotropy of the first magnetic pattern 210d of the second magnetic tunnel junction pattern MTJ2 may be greater than the first magnetic pattern 210d of the first magnetic tunnel junction pattern MTJ1 (see Figure 3 ). As a result, since the first magnetic tunnel junction pattern MTJ1 and the second magnetic tunnel junction pattern MTJ2 having different resistance values ​​are provided, a magnetic memory device including a unit cell capable of writing 2 or more bits of data can be provided.

[0062] The second interlayer insulating layer 250 may be disposed between the first interlayer insulating layer 120 and the third conductive line 320. The second interlayer insulating layer 250 may cover sidewalls of the second magnetic tunnel junction pattern MTJ2, sidewalls of the metal pattern 240 between the second magnetic tunnel junction pattern MTJ2 and the third conductive line 320, a top surface of the first interlayer insulating layer 120, and a portion of a top surface of the second vertical portion VP2 of the first conductive line 110 exposed by the first magnetic pattern 210.

[0063] Fig.10 According to some embodiments, Figure 8 A cross-sectional view of the magnetic memory device is shown by taking the line III-III′ of FIG.

[0064] Reference Fig.10, the first magnetic pattern 210e may have a third sidewall 217 and a fourth sidewall 219 that are opposite to each other in the second direction Y. The first magnetic pattern 210e may have a thickness T2 that gradually decreases from the third sidewall 217 to the fourth sidewall 219. The first magnetic pattern 210e may include a first portion P1 and a second portion P2. The first portion P1 may vertically overlap the first interlayer insulating layer 120, and the second portion P2 may vertically overlap the second vertical portion VP2 of the first conductive line 110. The first magnetic pattern 210e may expose a portion of the top surface of the second vertical portion VP2 of the first conductive line 110. The maximum thickness of the first portion P1 of the first magnetic pattern 210e may be less than the maximum thickness of the second portion P2 of the first magnetic pattern 210e. The bottom surface 215 of the first magnetic pattern 210e may be inclined.

[0065] The thickness Tc of the first conductive line 110 may gradually increase in a direction in which the thickness T2 of the first magnetic pattern 210e gradually decreases. The top surface 112 of the first conductive line 110 may be inclined.

[0066] Fig.11 , Fig.16 and Fig.19 are plan views illustrating stages in a method of manufacturing a magnetic memory device according to some embodiments. Fig.12 , Fig.14 , Fig.17 and Fig. 20 is along Fig.11 , Fig.16 and Fig.19 A cross-sectional view taken along line II′. Fig.13 , Fig.15 , Fig.18 and Fig.21 is along Fig.11 , Fig.16 and Fig.19 A cross-sectional view taken along line II-II′.

[0067] Reference Fig.11 , Fig.12 and Fig.13 , a first conductive line 110 may be formed on a substrate 100. A conductive layer may be formed on the substrate 100, and a patterning process may be performed on the conductive layer to form the first conductive line 110. The first conductive line 110 may extend along a first direction X. A first interlayer insulating layer 120 may be formed on the substrate 100. The first interlayer insulating layer 120 may cover a sidewall of the first conductive line 110. The first interlayer insulating layer 120 may be formed to have a top surface located on substantially the same level as a top surface 112 of the first conductive line 110.

[0068] A photoresist pattern 401 may be formed on the first conductive line 110 and the first interlayer insulating layer 120. The photoresist pattern 401 may cover a top surface of the first interlayer insulating layer 120 and may have an opening 403 exposing a portion of the first conductive line 110.

[0069] refer to Fig.14 and Fig.15 , a portion of the first conductive line 110 may be etched using the photoresist pattern 401 as an etching mask. Thus, a recessed portion RP may be formed in the first conductive line 110. The bottom surface of the recessed portion RP may be located at a lower level than the top surface 112 of the first conductive line 110 covered by the photoresist pattern 401. The etching process may be performed by a dry etching process or a wet etching process. After the etching process, the remaining photoresist pattern 401 may be removed. The removal process may be performed by an ashing process and / or a stripping process.

[0070] refer to Fig.16 , Fig.17 and Fig.18 , a magnetic tunnel junction layer MTJa may be formed on the first conductive line 110 and the first interlayer insulating layer 120. The magnetic tunnel junction layer MTJa may include: a first magnetic layer 210′, a tunnel barrier layer 220a, and a second magnetic layer 230a, which are sequentially formed on the first conductive line 110 and the first interlayer insulating layer 120. The first magnetic layer 210′ ​​may cover the top surfaces of the first conductive line 110 and the first interlayer insulating layer 120, and may fill the recessed portion RP. The first magnetic layer 210′ ​​may be aligned with the reference Figure 1 and Figure 2A The first magnetic pattern 210 described above is formed of the same material. A tunnel barrier layer 220a may be formed on the first magnetic layer 210'. The tunnel barrier layer 220a may cover the top surface of the first magnetic layer 210'. The tunnel barrier layer 220a may be formed with reference to Figure 1 and Figure 2A The tunnel barrier pattern 220 described above is formed of the same material. The second magnetic layer 230a may be formed on the tunnel barrier layer 220a. The second magnetic layer 230a may cover the top surface of the tunnel barrier layer 220a. The second magnetic layer 230a may be formed with reference to Figure 1 and Figure 2A The depicted second magnetic pattern 230 is formed of the same material.

[0071] The metal pattern 240 may be formed on the magnetic tunnel junction layer MTJa. The metal pattern 240 may vertically overlap the recessed portion RP of the first conductive line 110. A width Wd of the metal pattern 240 in the first direction X may be greater than a width W2 of the recessed portion RP in the first direction X (Wd>W2).

[0072] refer to Fig.19 , Fig. 20 and Fig.21 , the magnetic tunnel junction layer MTJa may be patterned using the metal pattern 240 as an etching mask. For example, the second magnetic layer 230a, the tunnel barrier layer 220a, and the first magnetic layer 210′ ​​may be sequentially patterned using the metal pattern 240 as an etching mask. Therefore, a magnetic tunnel junction pattern MTJ may be formed between the first conductive line 110 and the metal pattern 240. The magnetic tunnel junction pattern MTJ may include a first magnetic pattern 210, a tunnel barrier pattern 220, and a second magnetic pattern 230 sequentially stacked on the first conductive line 110. The first magnetic pattern 210 may cover a portion of the top surface of the first conductive line 110 and may fill the recessed portion RP. The patterning process may be performed using a wet etching process or a dry etching process.

[0073] Reference again Figure 1 , Figure 2A and Figure 3 , a second interlayer insulating layer 250 may be formed on the first conductive line 110 and the first interlayer insulating layer 120. The insulating layer may be formed to cover the top surface of the first conductive line 110 exposed by the magnetic tunnel junction pattern MTJ, the top surface of the first interlayer insulating layer 120, and the top surface of the metal pattern 240. A planarization process may be performed on the insulating layer until the top surface of the metal pattern 240 is exposed, thereby forming the second interlayer insulating layer 250.

[0074] The second conductive line 310 may be formed on the metal pattern 240. The second conductive line 310 may extend in a second direction Y crossing the first direction X.

[0075] By way of summary and review, embodiments relate to structures of spin-orbit torque (SOT) metal lines and magnetic materials capable of improving SOT switching efficiency. Current may flow through the SOT metal line to apply SOT to a magnetic pattern, and thus the magnetization direction of the magnetic pattern may be switched. According to embodiments, the magnetic pattern may include portions having different thicknesses, and thus the magnetic pattern may have both perpendicular magnetic anisotropy and horizontal magnetic anisotropy. As a result, the switching efficiency of a magnetic memory device may be improved.

[0076] In addition, the first conductive line (ie, SOT metal line) in contact with the magnetic pattern may include portions having different thicknesses (ie, portions corresponding to the different thicknesses of the magnetic pattern), so that current can be concentrated on a portion of the SOT metal line. As a result, the switching efficiency of the magnetic memory device can be improved.

[0077] In addition, a magnetic pattern in contact with only the conductive line and a magnetic pattern in contact with both the conductive line and the insulating layer may be disposed on the same conductive line. Therefore, the magnetic memory device may include a unit cell capable of writing 2 or more bits of data.

[0078] Example embodiments have been disclosed herein, and although specific terms are employed, they are used and will be interpreted only in a general descriptive sense and not for purposes of limitation. In some cases, as will be appreciated by those of ordinary skill in the art submitting this application, features, characteristics, and / or elements described in conjunction with a particular embodiment may be used alone or in combination with features, characteristics, and / or elements described in other embodiments, unless expressly stated otherwise. Therefore, it will be understood by those skilled in the art that various changes in form and detail may be made without departing from the spirit and scope of the invention as set forth in the appended claims.

Claims

1. A magnetic storage device, comprising: a first conductive line extending along a first direction on a substrate, the first conductive line having a recessed portion recessed from a top surface of the first conductive line; a first magnetic pattern on the first conductive line, the first magnetic pattern comprising a first portion and a second portion having different thicknesses; as well as a second conductive line on the first magnetic pattern and extending in a second direction intersecting the first direction, Wherein, at least a portion of the first magnetic pattern is in the recessed portion of the first conductive line.

2. The magnetic memory device according to claim 1, wherein: The first magnetic pattern has a first side wall and a second side wall, the first side wall and the second side wall are opposite to each other in the first direction, The first portion is adjacent to the first side wall, and The second portion is adjacent to the second side wall.

3. The magnetic memory device according to claim 2, wherein: A bottom surface of the first magnetic pattern is inclined.

4. The magnetic memory device according to claim 2, wherein: The first portion of the first magnetic pattern is located in the recessed portion, and the second portion of the first magnetic pattern is located on the top surface of the first conductive line.

5. The magnetic memory device according to claim 1, wherein: The first magnetic pattern further includes a third portion, The first magnetic pattern has a first side wall and a second side wall, the first side wall and the second side wall are opposite to each other in the first direction, The first portion of the first magnetic pattern is adjacent to the first sidewall, The third portion of the first magnetic pattern is adjacent to the second sidewall, the second portion of the first magnetic pattern is between the first portion and the third portion of the first magnetic pattern, The thickness of the first portion of the first magnetic pattern is equal to the thickness of the third portion of the first magnetic pattern, and The second portion of the first magnetic pattern has a thickness greater than thicknesses of the first portion and the third portion of the first magnetic pattern.

6. The magnetic memory device according to claim 5, wherein: A lower portion of the first magnetic pattern is tapered.

7. The magnetic memory device according to claim 1, wherein: The second portion of the first magnetic pattern is in the concave portion, and a width of the concave portion is smaller than a width of the first magnetic pattern.

8. The magnetic memory device according to claim 1, wherein: The first magnetic pattern has a first sidewall and a second sidewall, the first sidewall and the second sidewall are opposite to each other in the second direction, the first portion of the first magnetic pattern is adjacent to the first sidewall, and the second portion of the first magnetic pattern is adjacent to the second sidewall.

9. The magnetic memory device according to claim 8, wherein: The first magnetic pattern exposes a portion of a top surface of the first conductive line.

10. The magnetic memory device according to claim 8, further comprising: An interlayer insulating layer is located on one side of the first conductive line on the substrate, the first portion of the first magnetic pattern vertically overlaps the first conductive line, and the second portion of the first magnetic pattern vertically overlaps the interlayer insulating layer.

11. The magnetic memory device according to claim 10, wherein: A width of the first portion of the first magnetic pattern in the second direction is greater than a width of the second portion of the first magnetic pattern in the second direction.

12. The magnetic memory device according to claim 10, wherein: A top surface of the first conductive line is inclined.

13. The magnetic memory device according to claim 1, wherein: From the perspective of a cross-sectional view, the first magnetic pattern is T-shaped, inverted L-shaped, or trapezoidal.

14. The magnetic memory device according to claim 1, further comprising: a tunnel barrier pattern between the first magnetic pattern and the second conductive line; a second magnetic pattern between the tunnel barrier pattern and the second conductive line; as well as A metal pattern is between the second magnetic pattern and the second conductive line.

15. A magnetic storage device comprising: a first conductive line extending along a first direction on a substrate, the first conductive line having a recessed portion recessed from a top surface of the first conductive line; a magnetic pattern on the first conductive line and filling the recessed portion; as well as The second conductive line is on the magnetic pattern and extends in a second direction crossing the first direction.

16. The magnetic memory device according to claim 15, wherein: A width of the concave portion in the first direction is smaller than a width of the magnetic pattern in the first direction.

17. The magnetic memory device according to claim 16, wherein: The magnetic pattern comprises: a first portion in the recessed portion; and The second portion is on the top surface of the first conductive line, and the thickness of the first portion is greater than the thickness of the second portion.

18. The magnetic memory device according to claim 15, wherein: A width of the concave portion in the first direction is equal to a width of the magnetic pattern in the first direction.

19. The magnetic memory device according to claim 18, wherein: The magnetic pattern has a first sidewall and a second sidewall, the first sidewall and the second sidewall are opposite to each other in the first direction, and a thickness of the magnetic pattern gradually increases from the first sidewall toward the second sidewall.

20. The magnetic memory device according to claim 15, in, From a plan view perspective, the center of the magnetic pattern is offset from the center of a first portion of the first conductive line in the second direction, and the first portion vertically overlaps the second conductive line.

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