A touch panel, its manufacturing method and display device

Abstract

This invention discloses a touch panel, its manufacturing method, and a display device. By configuring an insulating layer between a substrate and a polarizer as including a silicon nitride layer and a barrier layer located on the side of the silicon nitride layer away from the substrate, the barrier layer can act as a masking layer to prevent ammonia gas escaping from the silicon nitride layer from drifting towards the polarizer, thereby avoiding fading of the polarizer. On the other hand, the insulating layer adopts a double-layer thin film form of silicon nitride layer and barrier layer. While forming a barrier layer within the existing insulating layer to reduce the amount of ammonia gas escaping, it retains a sufficiently thick silicon nitride layer, so as not to completely lose the dielectric, optical, and insulating properties of the insulating layer in the various film layers of the touch panel. Furthermore, the use of a composite insulating layer composed of silicon nitride layer and barrier layer can greatly improve the breakdown voltage of the circuit.

Description

Technical Field

[0001] This invention relates to the field of touch display technology, and more particularly to a touch panel, its manufacturing method, and a display device. Background Technology

[0002] With the development of technology, smart devices such as mobile phones, tablets, digital cameras, and smart wearable products with touch functionality have simplified human-computer interaction and brought users a superior user experience. Touchscreens are mainly classified into four types: resistive, capacitive, infrared, and surface acoustic wave (SAW) touchscreens. Due to their advantages such as fast response time, high reliability, and high durability, capacitive touch panels are widely used in electronic products. Summary of the Invention

[0003] The present invention provides a touch panel, its manufacturing method and display device, which solves the problem of severe fading of polarizers in existing touch panels during the reliability verification process.

[0004] Therefore, embodiments of the present invention provide a touch panel, comprising: a substrate, a touch structure and a polarizer sequentially disposed on the substrate, and an insulating layer disposed between the substrate and the polarizer;

[0005] The insulating layer includes a silicon nitride layer and a barrier layer located on the side of the silicon nitride layer away from the substrate.

[0006] Optionally, in a specific implementation, in the touch panel provided in the embodiments of the present invention, the silicon nitride layer includes a first silicon nitride layer and a second silicon nitride layer, and the barrier layer includes a first barrier layer and a second barrier layer.

[0007] Optionally, in a specific implementation, in the touch panel provided in the embodiments of the present invention, the insulating layer includes a first insulating layer, and the touch structure includes a bridging layer and an electrode layer stacked together, and the first insulating layer located between the bridging layer and the electrode layer; the first insulating layer is composed of a first silicon nitride layer and a first barrier layer that are contacted together.

[0008] Optionally, in a specific implementation, in the touch panel provided in the embodiments of the present invention, the first barrier layer is a first silicon oxide layer or a first dense silicon nitride layer.

[0009] Optionally, in a specific implementation, in the touch panel provided in the embodiments of the present invention, the insulating layer includes a barrier layer, the barrier layer is located between the substrate and the touch structure, and the barrier layer is composed of a second silicon nitride layer and a second barrier layer disposed in contact.

[0010] Optionally, in a specific implementation, in the touch panel provided in the embodiments of the present invention, the second barrier layer is a second silicon oxide layer or a second dense silicon nitride layer.

[0011] Optionally, in a specific implementation, in the touch panel provided in the embodiments of the present invention, the thickness of the first barrier layer accounts for 10% to 15% of the thickness of the first insulating layer.

[0012] Optionally, in a specific implementation, in the touch panel provided in the embodiments of the present invention, the thickness of the second barrier layer accounts for 10% to 15% of the thickness of the barrier layer.

[0013] Optionally, in a specific implementation, in the touch panel provided in the embodiments of the present invention, the bridging layer includes a plurality of bridging electrodes, the electrode layer includes a plurality of touch electrodes, and some of the touch electrodes are electrically connected through the bridging electrodes.

[0014] Accordingly, embodiments of the present invention also provide a display device, including the touch panel described in any of the above embodiments of the present invention.

[0015] Accordingly, embodiments of the present invention also provide a method for manufacturing a touch panel, comprising:

[0016] A touch structure and a polarizer are sequentially formed on a substrate, and an insulating layer is formed between the touch structure and the polarizer; wherein, forming the touch structure includes forming a bridge layer and an electrode layer stacked together, and forming the insulating layer includes forming a silicon nitride layer and a barrier layer located on the side of the silicon nitride layer away from the substrate.

[0017] Optionally, in a specific implementation, in the manufacturing method provided in the embodiments of the present invention, forming the insulating layer includes: forming a first insulating layer; wherein,

[0018] The formation of the first insulating layer specifically includes:

[0019] After the bridging layer is formed and before the electrode layer is formed, a silicon nitride layer is deposited on the bridging layer. The surface of the silicon nitride layer is oxidized using oxygen plasma to form a first silicon oxide layer on the surface of the silicon nitride layer. The remaining silicon nitride layer serves as the first silicon nitride layer. The first silicon nitride layer and the first silicon oxide layer constitute the first insulating layer.

[0020] After forming the first silicon nitride layer and the first silicon oxide layer, the process further includes:

[0021] The first silicon nitride layer and the first silicon oxide layer are patterned to form vias for connecting the bridging layer and the electrode layer.

[0022] Optionally, in a specific implementation, in the manufacturing method provided in the embodiments of the present invention, forming the insulating layer includes: forming a barrier layer; wherein,

[0023] The formation of the barrier layer specifically includes:

[0024] Before forming the touch structure, a silicon nitride layer is deposited on the substrate, and the surface of the silicon nitride layer is oxidized using oxygen plasma to form a second silicon oxide layer on the surface of the silicon nitride layer. The remaining silicon nitride layer serves as the second silicon nitride layer, and the second silicon nitride layer and the second silicon oxide layer constitute the barrier layer.

[0025] Optionally, in a specific implementation, in the manufacturing method provided in the embodiments of the present invention, forming the insulating layer includes: forming a first insulating layer; wherein,

[0026] The formation of the first insulating layer specifically includes:

[0027] After the bridging layer is formed and before the electrode layer is formed, a silicon nitride layer is deposited on the bridging layer, and the silicon nitride layer is annealed and passivated using hydrogen plasma. A first dense silicon nitride layer is formed on the surface of the silicon nitride layer, and the remaining silicon nitride layer serves as the first silicon nitride layer. The first silicon nitride layer and the first dense silicon nitride layer constitute the first insulating layer.

[0028] After forming the first silicon nitride layer and the first dense silicon nitride layer, the method further includes:

[0029] The first silicon nitride layer and the first dense silicon nitride layer are patterned to form vias for connecting the bridging layer and the electrode layer.

[0030] Optionally, in a specific implementation, in the manufacturing method provided in the embodiments of the present invention, forming the insulating layer includes: forming a barrier layer; wherein,

[0031] The formation of the barrier layer specifically includes:

[0032] Before forming the touch structure, a silicon nitride layer is deposited on the substrate, and the silicon nitride layer is annealed and passivated using hydrogen plasma. A second dense silicon nitride layer is formed on the surface of the silicon nitride layer, and the remaining silicon nitride layer serves as the second silicon nitride layer. The second silicon nitride layer and the second dense silicon nitride layer constitute the barrier layer.

[0033] The beneficial effects of this invention are as follows:

[0034] The touch panel, its manufacturing method, and display device provided in this embodiment of the invention, by setting the insulating layer between the substrate and the polarizer to include a silicon nitride layer and a barrier layer located on the side of the silicon nitride layer away from the substrate, on the one hand, the barrier layer can act as a masking layer to prevent ammonia gas escaping from the silicon nitride layer from drifting towards the polarizer, thereby avoiding fading of the polarizer; on the other hand, the insulating layer adopts a double-layer thin film form of silicon nitride layer and barrier layer, forming a barrier layer within the existing insulating layer to reduce the amount of ammonia gas escaping, while retaining a silicon nitride layer of sufficient thickness, so as not to completely lose the dielectric properties, optical properties, insulating properties, etc. of the insulating layer in each film layer of the touch panel; and, the use of a composite insulating layer composed of silicon nitride layer and barrier layer can greatly improve the breakdown voltage of the circuit. Attached Figure Description

[0035] Figure 1 This is a schematic diagram of the structure of a touch panel provided in related technologies;

[0036] Figure 2 This is a schematic diagram of the structure of a touch panel provided in an embodiment of the present invention;

[0037] Figures 3A to 3F This is a schematic diagram of the structure of the touch panel manufacturing method provided in the embodiments of the present invention after each step. Detailed Implementation

[0038] To make the objectives, technical solutions, and advantages of this invention clearer, the touch panel, its manufacturing method, and display device provided by this invention will be described in further detail below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this invention, and not all embodiments. Based on the embodiments of this invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this invention.

[0039] The shapes and sizes of the components in the accompanying drawings do not reflect the actual proportions of the touch panel; they are merely illustrative of the invention.

[0040] Currently, such as Figure 1As shown, the touch panel in the related technology basically adopts a touch structure composed of a barrier layer 01, a bridge layer 02, an insulator layer 03, a metal mesh layer 04, and an OC layer 05. The barrier layer 01 and the insulator layer 03 are both formed into SiNx thin films using a low-temperature chemical vapor deposition (CVD) process. Due to the poor density of the SiNx thin film, various gases such as nitrogen and ammonia will remain in the formed SiNx thin film. In the prior art, after attaching a polarizer (POL) 06 to the touch structure, a serious fading of the POL was found during the reliability verification process. It was verified that the main reason for the serious fading of the POL was caused by ammonia gas escaping from the SiNx thin film. Therefore, in order to avoid the fading of the POL, those skilled in the art urgently need to find a technical solution to prevent the escape of ammonia gas from the SiNx thin film.

[0041] In view of this, an embodiment of the present invention provides a touch panel, such as Figure 2 As shown, it includes: a substrate 1, a touch structure 2 and a polarizer 3 sequentially disposed on the substrate 1, and an insulating layer 4 disposed between the substrate 1 and the polarizer 3;

[0042] The insulating layer 4 includes a silicon nitride layer 41 and a dense barrier layer 42 located on the side of the silicon nitride layer 41 away from the substrate 1.

[0043] The touch panel provided in this embodiment of the invention, by setting the insulating layer 4 between the substrate 1 and the polarizer 3 to include a silicon nitride layer 41 and a barrier layer 42 located on the side of the silicon nitride layer 41 away from the substrate 1, on the one hand, the barrier layer 42 can act as a masking layer to prevent ammonia gas escaping from the silicon nitride layer 41 from drifting to the polarizer 3, thereby avoiding fading of the polarizer; on the other hand, the insulating layer 4 adopts a double-layer thin film form of silicon nitride layer 41 and barrier layer 42, while forming barrier layer 42 on the surface of the existing insulating layer 4 to reduce the amount of ammonia gas escaping, retaining a sufficiently thick silicon nitride layer 41, so as not to completely lose the dielectric properties, optical properties, insulation properties, etc. of the insulating layer 4 in the various film layers of the touch panel; and, the insulating layer 4 adopts a composite insulating layer composed of silicon nitride layer 41 and barrier layer 42, which can greatly improve the breakdown voltage of the circuit.

[0044] Furthermore, in specific implementations, in the touch panel provided in the embodiments of the present invention, such as Figure 2As shown, the silicon nitride layer 41 includes a first silicon nitride layer 411 and a second silicon nitride layer 412, and the barrier layer 42 includes a first barrier layer 421 and a second barrier layer 422. By configuring the insulating layer 4 to include the first barrier layer 421 and the second barrier layer 422 stacked together, the dual effect of the two barrier layers can more effectively block the ammonia gas escaping from the silicon nitride layer 41 from drifting towards the polarizer, thereby further preventing the polarizer from fading.

[0045] Furthermore, in specific implementations, in the touch panel provided in the embodiments of the present invention, such as Figure 2 As shown, the insulating layer 4 includes a first insulating layer 10, and the touch structure 2 includes a bridging layer 21 and an electrode layer 22 stacked together, and a first insulating layer 10 located between the bridging layer 21 and the electrode layer 22; the first insulating layer 10 is composed of a first silicon nitride layer 411 and a first barrier layer 421 that are in contact.

[0046] Furthermore, in specific implementations, in the touch panel provided in the embodiments of the present invention, such as Figure 2 As shown, the first barrier layer 421 can be a first silicon oxide layer, or it can be a first dense silicon nitride layer. Specifically, when the first barrier layer 421 is a first silicon oxide layer, after the first insulating layer made of silicon nitride is fabricated, oxygen plasma is used to oxidize the surface of the first insulating layer to form a first silicon oxide layer (i.e., the first barrier layer 421) on the surface of the first insulating layer. The remaining silicon nitride layer serves as the first silicon nitride layer 411. The first silicon nitride layer 411 and the first silicon oxide layer (i.e., the first barrier layer 421) constitute the first insulating layer 10. Therefore, by setting the first insulating layer 10 located between the bridging layer 21 and the electrode layer 22 to include the first silicon oxide layer and the first barrier layer 421, on the one hand, since the first silicon oxide layer is relatively dense, it can act as a masking layer to prevent the ammonia gas escaping from the first silicon nitride layer 411 from drifting towards the polarizer 3, thereby preventing the polarizer from fading.

[0047] When the first barrier layer 421 is a first dense silicon nitride layer, after the first insulating layer made of silicon nitride is fabricated, hydrogen plasma is used to anneal and passivate the first insulating layer. Annealing and passivating the silicon nitride layer with hydrogen plasma can improve the orderliness of the silicon nitride structure, that is, improve the density of the silicon nitride layer. Therefore, a first dense silicon nitride layer (i.e., the first barrier layer 421) can be formed on the surface of the silicon nitride layer. The remaining silicon nitride layer serves as the first silicon nitride layer 411. The first silicon nitride layer 411 and the first dense silicon nitride layer (i.e., the first barrier layer 421) constitute the first insulating layer 10. Therefore, by setting the first insulating layer 10 located between the bridging layer 21 and the electrode layer 22 to include the first dense silicon nitride layer and the first barrier layer 421, on the one hand, since the first dense silicon nitride layer is relatively dense, it can act as a masking layer to prevent the ammonia gas escaping from the first silicon nitride layer 411 from drifting to the polarizer 3, thereby avoiding the fading phenomenon of the polarizer.

[0048] Touch panels and display panels are typically bonded together with optical adhesive to form a touch display device. The general manufacturing method for a touch display device involves first fabricating the display device on a substrate, then encapsulating the display device (currently, TFE encapsulation is commonly used). After encapsulation, a barrier layer is fabricated on the TFE encapsulation layer to further block external moisture. The barrier layer is typically made of silicon nitride. Subsequent processes include fabricating and bonding the touch panel, as well as bonding the polarizer (POL) and cover glass. Since the barrier layer is generally formed using a low-temperature chemical vapor deposition (CVD) process to create a SiNx thin film, and because SiNx films have poor density, various gases such as nitrogen and ammonia may remain within the formed SiNx film. The escape of ammonia can cause severe fading of the POL. Therefore, in the specific implementation of the touch panel provided in the embodiments of this invention, as... Figure 2 As shown, the insulating layer 4 includes a barrier layer 20, which is located between the substrate 1 and the touch structure 2. The barrier layer 20 is composed of a second silicon nitride layer 412 and a second barrier layer 422 that are contacted together. Due to the embodiments of the present invention provided... Figure 2 Although the first insulating layer 10 is configured to include a first silicon nitride layer 411 and a first silicon oxide layer (second barrier layer 421) located on the side of the first silicon nitride layer 411 away from the substrate 1, the first silicon oxide layer (second barrier layer 421) can block the ammonia gas escaping from the first silicon nitride layer 411. However, the material of the existing barrier layer 20 is also silicon nitride, and the existing barrier layer 20 will also release ammonia gas, causing the polarizer 3 to fade. Therefore, in order to effectively prevent the polarizer 3 from fading, the present invention also configures the barrier layer 20 to include a second silicon nitride layer 412 and a second barrier layer 422 located on the side of the second silicon nitride layer 412 away from the substrate 1.

[0049] Furthermore, in specific implementations, in the touch panel provided in the embodiments of the present invention, such as Figure 2 As shown, the second barrier layer 422 can be a second silicon oxide layer, or it can also be a second dense silicon nitride layer. In this way, since both the second silicon oxide layer and the second dense silicon nitride layer are relatively dense, they can act as a masking layer to prevent ammonia gas escaping from the second silicon nitride layer 412 from drifting towards the polarizer 3, thereby preventing the polarizer from fading. Specifically, the implementation scheme and principle of the second barrier layer 422 being a second silicon oxide layer or a second dense silicon nitride layer can be found in the implementation scheme and principle of the first barrier layer 421 being a first silicon oxide layer or a first dense silicon nitride layer, and will not be repeated here.

[0050] Furthermore, in specific implementation, in order to ensure that the amount of ammonia gas escaping is reduced and the escaping ammonia gas is blocked from drifting towards the polarizer, and also to ensure that the performance of the remaining first silicon nitride layer in the first insulating layer is not affected, the thickness of the first barrier layer in the above-mentioned touch panel provided in the embodiments of the present invention can account for 10% to 15% of the thickness of the first insulating layer.

[0051] Furthermore, in specific implementation, in order to ensure that the amount of ammonia gas escaping is reduced and the escaping ammonia gas is blocked from drifting toward the polarizer, and also to ensure that the performance of the remaining second silicon nitride layer in the barrier layer is not affected, the thickness of the second barrier layer in the above-mentioned touch panel provided in the embodiments of the present invention can account for 10% to 15% of the thickness of the barrier layer.

[0052] Furthermore, in specific implementations, in the touch panel provided in the embodiments of the present invention, such as Figure 2 As shown, it also includes a protective layer 5 located between the touch structure 2 and the polarizer 3. Specifically, the material of the protective layer 5 is generally an organic material. The protective layer 5 serves as a planarization layer on the one hand, and on the other hand, it protects the electrode layer 22 from the influence of subsequent processes. The polarizer 3 is generally a circular polarizer. The polarizer 3 is used because external light will be reflected back after passing through the OLED cathode (usually metal), and we will see ourselves in the screen, affecting the viewing effect and contrast. By attaching the polarizer 3, reflection can be reduced and the metal electrode can be avoided.

[0053] It should be noted that the embodiments of the present invention provide Figure 2 The example described is based on the bridging layer 21 being located on the side closer to the substrate 1 and the electrode layer 22 being located on the side farther from the substrate 1. Of course, in specific implementations, the electrode layer 221 can also be located on the side closer to the substrate 1 and the bridging layer 2 on the side farther from the substrate 1, both of which fall within the scope of protection of this invention.

[0054] Furthermore, in specific implementations, in the touch panel provided in the embodiments of the present invention, such as Figure 2As shown, the bridging layer 21 includes multiple bridging electrodes 211, and the electrode layer 22 includes multiple touch electrodes, some of which are electrically connected through the bridging electrodes 211. Specifically, the touch electrodes generally include multiple touch driving electrodes 221 and multiple touch sensing electrodes 222. The touch driving electrodes 221 and touch sensing electrodes 222 are located on the same layer and are cross-insulated, for example... Figure 2 In this configuration, each touch driving electrode 221 is electrically connected together through a bridging electrode 211 arranged in a different layer, and the touch sensing electrode 222 is electrically connected together through a bridging electrode arranged in the same layer. Alternatively, each touch sensing electrode 222 can be electrically connected together through a bridging electrode arranged in a different layer, and the touch driving electrode 221 can be electrically connected together through a bridging electrode arranged in the same layer.

[0055] Based on the same inventive concept, embodiments of the present invention also provide a method for manufacturing a touch panel, comprising:

[0056] A touch structure and a polarizer are sequentially formed on a substrate, and an insulating layer is formed between the substrate and the polarizer; wherein, forming the touch structure includes forming a bridge layer and an electrode layer stacked together, and forming the insulating layer includes forming a silicon nitride layer and a barrier layer located on the side of the silicon nitride layer away from the substrate.

[0057] The method for manufacturing the touch panel provided in this embodiment of the invention, by setting the insulating layer between the substrate and the polarizer to include a silicon nitride layer and a barrier layer located on the side of the silicon nitride layer away from the substrate, on the one hand, the barrier layer can act as a masking layer to prevent ammonia gas escaping from the silicon nitride layer from drifting towards the polarizer, thereby avoiding fading of the polarizer; on the other hand, the insulating layer adopts a double-layer thin film form of silicon nitride layer and barrier layer, forming a barrier layer within the existing insulating layer to reduce the amount of ammonia gas escaping, while retaining a silicon nitride layer of sufficient thickness, so as not to completely lose the dielectric properties, optical properties, insulating properties, etc. of the insulating layer in each film layer of the touch panel; and, the use of a composite insulating layer composed of silicon nitride layer and barrier layer can greatly improve the breakdown voltage of the circuit.

[0058] Furthermore, in a specific implementation, in the manufacturing method provided in the embodiments of the present invention, forming an insulating layer includes: forming a first insulating layer; wherein,

[0059] The formation of the first insulating layer specifically includes:

[0060] After forming the bridging layer and before forming the electrode layer, a silicon nitride layer is deposited on the bridging layer. The surface of the silicon nitride layer is then oxidized using oxygen plasma to form a first silicon oxide layer. The remaining silicon nitride layer serves as the first silicon nitride layer. The first silicon nitride layer and the first silicon oxide layer constitute the first insulating layer. Specifically, the implementation principle of the first insulating layer comprising the first silicon nitride layer and the first silicon oxide layer can be found in the touch panel provided by this invention. Figure 2 The relevant explanations will not be repeated here.

[0061] Furthermore, in a specific implementation, in the above-described fabrication method provided in the embodiments of the present invention, after forming the first silicon nitride layer and the first silicon oxide layer (using an oxygen plasma process), the method further includes:

[0062] The first silicon nitride layer and the first silicon oxide layer are patterned to form vias for connecting the bridging layer and the electrode layer. Specifically, since the electrode layer (such as a touch driving electrode or a touch sensing electrode) fabricated on the first insulating layer needs to be electrically connected to the bridging electrode of the bridging layer through vias penetrating the insulating layer after the first insulating layer is fabricated, the first silicon nitride layer and the first silicon oxide layer also need to be patterned after forming to form vias for connecting the bridging layer and the electrode layer. In this embodiment, oxygen plasma is used to oxidize the surface of the insulating layer before patterning to form the vias for connecting the bridging layer and the electrode layer.

[0063] Of course, in specific implementations, in the manufacturing method provided in the embodiments of the present invention, forming an insulating layer includes: forming a first insulating layer; wherein,

[0064] The formation of the first insulating layer specifically includes:

[0065] After forming the bridging layer and before forming the electrode layer, a silicon nitride layer is deposited on the bridging layer. The silicon nitride layer can then be annealed and passivated using hydrogen plasma to form a first dense silicon nitride layer on its surface. The remaining silicon nitride layer serves as the first silicon nitride layer, and the first silicon nitride layer and the first dense silicon nitride layer together constitute the first insulating layer. Specifically, annealing and passivating the silicon nitride layer with hydrogen plasma can improve the orderliness of the silicon nitride structure, i.e., increase the density of the silicon nitride layer surface.

[0066] Furthermore, in a specific implementation, in the above-described fabrication method provided in the embodiments of the present invention, after forming the first silicon nitride layer and the first dense silicon nitride layer (using a hydrogen plasma annealing process), the method further includes:

[0067] The first silicon nitride layer and the first dense silicon nitride layer are patterned to form vias for connecting the bridging layer and the electrode layer. Specifically, since the electrode layer (such as a touch driving electrode or a touch sensing electrode) formed on the first insulating layer needs to be electrically connected to the bridging electrode of the bridging layer through vias penetrating the insulating layer after the first insulating layer is formed, the first silicon nitride layer and the first silicon oxide layer also need to be patterned to form vias for connecting the bridging layer and the electrode layer. In this embodiment, oxygen plasma is used to oxidize the surface of the insulating layer before patterning to form vias for connecting the bridging layer and the electrode layer.

[0068] Furthermore, in a specific implementation, in the manufacturing method provided in the embodiments of the present invention, forming an insulating layer includes: forming a barrier layer; wherein,

[0069] Forming a barrier layer, specifically including:

[0070] Before forming the touch structure, a silicon nitride layer is deposited on the substrate. The surface of the silicon nitride layer is then oxidized using oxygen plasma to form a second silicon oxide layer. The remaining silicon nitride layer serves as the second silicon nitride layer. The second silicon nitride layer and the second silicon oxide layer constitute a barrier layer. Specifically, the implementation principle of the barrier layer comprising the second silicon nitride layer and the second silicon oxide layer can be found in the touch panel provided by this invention. Figure 2 The relevant explanations will not be repeated here.

[0071] Of course, in specific implementations, in the manufacturing method provided in the embodiments of the present invention, forming an insulating layer includes: forming a barrier layer; wherein,

[0072] Forming a barrier layer, specifically including:

[0073] Before forming the touch structure, a silicon nitride layer is deposited on the substrate. This silicon nitride layer is then annealed and passivated using hydrogen plasma, forming a second dense silicon nitride layer on its surface. The remaining silicon nitride layer serves as the second silicon nitride layer, and both layers constitute a barrier layer. Specifically, annealing and passivating the silicon nitride layer with hydrogen plasma improves the orderliness of the silicon nitride structure, i.e., increases the density of the silicon nitride layer surface.

[0074] In summary, in the manufacturing method provided in the embodiments of the present invention, by using oxygen plasma to perform surface oxidation treatment on the first insulating layer and the barrier layer, or by using hydrogen plasma to perform annealing and passivation treatment on the first insulating layer and the barrier layer, the amount of ammonia gas escaping from the silicon nitride layer and the amount of ammonia gas escaping can be reduced more effectively, thereby more effectively preventing the problem of fading of the surface polarizer.

[0075] The following describes the embodiments of the present invention in conjunction with the manufacturing method provided by the present invention. Figure 2 The manufacturing method of the touch panel shown is explained in detail, taking the oxygen plasma treatment process as an example.

[0076] (1) A silicon nitride layer is deposited on substrate 1 using a CVD deposition process. The surface of the silicon nitride layer is then oxidized using oxygen plasma to form a second silicon oxide layer 422. The remaining silicon nitride layer serves as a second silicon nitride layer 412. The second silicon nitride layer 412 and the second silicon oxide layer 422 constitute a barrier layer 20. Figure 3A As shown.

[0077] (2) Based on step (1), a metal layer is deposited, and the metal layer is patterned using photolithography to form bridging electrodes 211. Multiple bridging electrodes 211 form a bridging layer 21, such as... Figure 3B As shown.

[0078] (3) A silicon nitride layer is deposited based on step (2) using a CVD deposition process. The surface of the silicon nitride layer is then oxidized using oxygen plasma to form a first silicon oxide layer 421 on the surface of the silicon nitride layer. The remaining silicon nitride layer serves as the first silicon nitride layer 411. The first silicon nitride layer 411 and the first silicon oxide layer 421 constitute the first insulating layer 10. Figure 3C As shown.

[0079] (4) The first insulating layer 10 in step (3) is patterned using a patterning process to form a via V in the first insulating layer 10, such as... Figure 3D As shown.

[0080] (5) Based on step (4), deposit an electrode layer (which can be a metallic material or a transparent conductive material), and etch touch electrodes (touch driving electrode 221 and touch sensing electrode 222) into the electrode layer using a patterning process. The touch driving electrode 221 is electrically connected to the bridging electrode 211 through a via V, such as... Figure 3E As shown.

[0081] (6) Based on step (5), deposit organic material to form a protective layer 5, such as Figure 3F As shown.

[0082] (7) The polarizer 3 is bonded to the touch panel of step (6) to form the embodiment of the present invention. Figure 2 The touch panel shown is as follows: Figure 2 As shown.

[0083] It should be noted that, in the implementation of this invention, an oxidation process is used to treat the surfaces of the first insulating layer and the barrier layer with oxygen plasma. Figure 2 The detailed fabrication method of the structure shown is illustrated below; of course, in actual implementation, a hydrogen plasma annealing and passivation process is used to treat the first insulating layer and the barrier layer. Figure 2 The fabrication method of the structure shown is the same as that described above. Figures 3A-3F The structures shown are the same, the only difference being that the first barrier layer 421 is a first dense silicon nitride layer and the second barrier layer 422 is a second dense silicon nitride layer, which will not be described in detail here.

[0084] Based on the same inventive concept, embodiments of the present invention also provide a display device, including the touch panel described above in the embodiments of the present invention. This display device can be any product or component with display functionality, such as a mobile phone, tablet computer, television, monitor, laptop computer, digital photo frame, or navigator. Implementation of this display device can refer to the embodiments of the touch panel described above; repeated details will not be elaborated further.

[0085] The touch panel, its manufacturing method, and display device provided in this embodiment of the invention, by setting the insulating layer between the substrate and the polarizer to include a silicon nitride layer and a barrier layer located on the side of the silicon nitride layer away from the substrate, on the one hand, the barrier layer can act as a masking layer to prevent ammonia gas escaping from the silicon nitride layer from drifting towards the polarizer, thereby avoiding fading of the polarizer; on the other hand, the insulating layer adopts a double-layer thin film form of silicon nitride layer and barrier layer, forming a barrier layer within the existing insulating layer to reduce the amount of ammonia gas escaping, while retaining a silicon nitride layer of sufficient thickness, so as not to completely lose the dielectric properties, optical properties, insulating properties, etc. of the insulating layer in each film layer of the touch panel; and, the use of a composite insulating layer composed of silicon nitride layer and barrier layer can greatly improve the breakdown voltage of the circuit.

[0086] Obviously, those skilled in the art can make various modifications and variations to this invention without departing from its spirit and scope. Therefore, if these modifications and variations fall within the scope of the claims of this invention and their equivalents, this invention also intends to include these modifications and variations.

Claims

1. A touch panel, characterized in that, include: A substrate, on which a touch structure and a polarizer are sequentially disposed; The touch structure includes a bridging layer and an electrode layer stacked together, and a first insulating layer located between the bridging layer and the electrode layer; the first insulating layer includes a first silicon nitride layer and a first barrier layer located on the side of the first silicon nitride layer away from the substrate. The first barrier layer is used to prevent ammonia gas escaping from the first silicon nitride layer from drifting toward the polarizer; The first barrier layer is a first silicon oxide layer or a first dense silicon nitride layer; The formation of the first insulating layer specifically includes: After the bridging layer is formed and before the electrode layer is formed, a silicon nitride layer is deposited on the bridging layer. The surface of the silicon nitride layer is oxidized using oxygen plasma to form a first silicon oxide layer on the surface of the silicon nitride layer. The remaining silicon nitride layer serves as the first silicon nitride layer. The first silicon nitride layer and the first silicon oxide layer constitute the first insulating layer. After forming the first silicon nitride layer and the first silicon oxide layer, the process further includes: The first silicon nitride layer and the first silicon oxide layer are patterned to form vias for connecting the bridging layer and the electrode layer; Alternatively, forming the first insulating layer specifically includes: After the bridging layer is formed and before the electrode layer is formed, a silicon nitride layer is deposited on the bridging layer, and the silicon nitride layer is annealed and passivated using hydrogen plasma. A first dense silicon nitride layer is formed on the surface of the silicon nitride layer, and the remaining silicon nitride layer serves as the first silicon nitride layer. The first silicon nitride layer and the first dense silicon nitride layer constitute the first insulating layer. After forming the first silicon nitride layer and the first dense silicon nitride layer, the method further includes: The first silicon nitride layer and the first dense silicon nitride layer are patterned to form vias for connecting the bridging layer and the electrode layer.

2. The touch panel as described in claim 1, characterized in that, It also includes a barrier layer located between the substrate and the touch structure, the barrier layer comprising a second silicon nitride layer and a second barrier layer located on the side of the second silicon nitride layer away from the substrate; The second barrier layer is used to prevent ammonia gas escaping from the second silicon nitride layer from drifting toward the polarizer.

3. The touch panel as described in claim 2, characterized in that, The second barrier layer is a second silicon oxide layer or a second dense silicon nitride layer.

4. The touch panel as described in claim 1, characterized in that, The thickness of the first barrier layer is 10% to 15% of the thickness of the first insulation layer.

5. The touch panel as described in claim 2, characterized in that, The thickness of the second barrier layer accounts for 10% to 15% of the thickness of the barrier layer.

6. The touch panel as described in claim 1, characterized in that, The bridging layer includes multiple bridging electrodes, and the electrode layer includes multiple touch electrodes, some of which are electrically connected through the bridging electrodes.

7. A display device, characterized in that, Including the touch panel as described in any one of claims 1-6.

8. A method for manufacturing a touch panel, characterized in that, include: A touch structure and a polarizer are sequentially formed on a substrate; wherein, forming the touch structure includes forming a bridging layer and an electrode layer stacked together, and forming a first insulating layer located between the bridging layer and the electrode layer, forming the first insulating layer includes forming a first silicon nitride layer and a first barrier layer located on the side of the first silicon nitride layer away from the substrate; the first barrier layer is used to prevent ammonia gas escaping from the first silicon nitride layer from drifting to the polarizer; the first barrier layer is a first silicon oxide layer or a first dense silicon nitride layer. The formation of the first insulating layer specifically includes: After the bridging layer is formed and before the electrode layer is formed, a silicon nitride layer is deposited on the bridging layer. The surface of the silicon nitride layer is oxidized using oxygen plasma to form a first silicon oxide layer on the surface of the silicon nitride layer. The remaining silicon nitride layer serves as the first silicon nitride layer. The first silicon nitride layer and the first silicon oxide layer constitute the first insulating layer. After forming the first silicon nitride layer and the first silicon oxide layer, the process further includes: The first silicon nitride layer and the first silicon oxide layer are patterned to form vias for connecting the bridging layer and the electrode layer; Alternatively, forming the first insulating layer specifically includes: After the bridging layer is formed and before the electrode layer is formed, a silicon nitride layer is deposited on the bridging layer, and the silicon nitride layer is annealed and passivated using hydrogen plasma. A first dense silicon nitride layer is formed on the surface of the silicon nitride layer, and the remaining silicon nitride layer serves as the first silicon nitride layer. The first silicon nitride layer and the first dense silicon nitride layer constitute the first insulating layer. After forming the first silicon nitride layer and the first dense silicon nitride layer, the method further includes: The first silicon nitride layer and the first dense silicon nitride layer are patterned to form vias for connecting the bridging layer and the electrode layer.

9. The manufacturing method as described in claim 8, characterized in that, Before forming the touch structure, it also includes: A silicon nitride layer is deposited on the substrate, and the surface of the silicon nitride layer is oxidized using oxygen plasma to form a second silicon oxide layer on the surface of the silicon nitride layer. The remaining silicon nitride layer serves as the second silicon nitride layer, and the second silicon nitride layer and the second silicon oxide layer constitute a barrier layer.

10. The manufacturing method as described in claim 8, characterized in that, Before forming the touch structure, it also includes: A silicon nitride layer is deposited on the substrate, and the silicon nitride layer is annealed and passivated using hydrogen plasma. A second dense silicon nitride layer is formed on the surface of the silicon nitride layer, and the remaining silicon nitride layer serves as the second silicon nitride layer. The second silicon nitride layer and the second dense silicon nitride layer constitute a barrier layer.

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