Non-reciprocal power divider and electromagnetic wave transmission device

Abstract

This invention provides a non-reciprocal power divider and an electromagnetic wave transmission device. The non-reciprocal power divider includes: a dielectric substrate; at least one Wilkinson power divider; the ports of the Wilkinson power divider serve as the radio frequency ports of the non-reciprocal power divider; the Wilkinson power divider is disposed on the top surface of the dielectric substrate, and each branch of the Wilkinson power divider includes a filter, the filter being composed of at least two resonators; the back surface of the dielectric substrate is provided with multiple varactor diodes, multiple signal feed circuits, multiple metallized vias, and multiple modulation ports; the modulation ports are used to receive modulation signals, each modulation port is connected to a metallized via through a signal feed circuit, one end of each varactor diode is connected to one end of a resonator through a metallized via, and the other end of each varactor diode is grounded. This invention achieves a non-reciprocal power divider without any magnetic material biasing, and has advantages such as integration with circuits.

Description

Technical Field

[0001] This invention relates to semiconductor technology, specifically to a non-reciprocal power divider and an electromagnetic wave transmission device. Background Technology

[0002] In mobile communication systems, radio frequency non-reciprocal devices are essential system components. Non-reciprocity refers to the fact that electromagnetic waves exhibit different propagation characteristics when propagating in opposite directions in a medium.

[0003] Common radio frequency (RF) non-reciprocal devices include isolators and circulators. Isolators protect signal sources from damage caused by high-power reflected signals, while circulators enable directional transmission of electromagnetic waves. Existing non-reciprocal devices typically employ magnetic materials and external magnetic field bias to break time-reversal symmetry and achieve non-reciprocity in electromagnetic wave transmission. However, these non-reciprocal devices often suffer from drawbacks due to the use of magnetic materials, such as high losses, large size, high cost, and inability to be integrated into circuits.

[0004] With the rapid development of 5G communication, mobile communication uses increasingly higher spectrums, placing higher demands on the miniaturization and integration of devices. Existing non-reciprocal radio frequency (RF) devices almost all require the use of magnetic materials such as ferrites to break time-reversal symmetry. However, the incompatibility between the crystal lattice of magnetic materials and CMOS (complementary metal-oxide-semiconductor) integrated circuit fabrication processes makes it difficult to integrate these RF devices with system circuits, hindering the miniaturization of equipment. Summary of the Invention

[0005] This invention provides a non-reciprocal power divider that can be integrated into a circuit without the need for magnetic material biasing. The non-reciprocal power divider provided by this invention includes: a dielectric substrate; at least one Wilkinson power divider; the port of the Wilkinson power divider serves as the radio frequency port of the non-reciprocal power divider; wherein,

[0006] The Wilkinson power divider is disposed on the top surface of the dielectric substrate, and each branch of the Wilkinson power divider includes a filter, the filter being composed of at least two resonators;

[0007] The back side of the dielectric substrate is provided with multiple varactor diodes, multiple signal feed circuits, multiple metallized vias and multiple modulation ports; the modulation ports are used to receive modulation signals, each modulation port is connected to a metallized via through a signal feed circuit, one end of each varactor diode is connected to one end of a resonator through a metallized via, and the other end of each varactor diode is grounded.

[0008] In this embodiment of the invention, the resonators of each filter are arranged in an interleaved configuration.

[0009] In this embodiment of the invention, the Wilkinson power divider is a microstrip Wilkinson power divider.

[0010] In this embodiment of the invention, the back side of the dielectric substrate is further provided with a plurality of inductors, and each signal feed circuit is connected to a metallized via through an inductor.

[0011] In this embodiment of the invention, each signal feed circuit is a circuit with a coplanar waveguide structure.

[0012] In this embodiment of the invention, the modulation signal includes: a DC bias voltage signal and / or a low-frequency modulation signal.

[0013] In this embodiment of the invention, the resonator is a microstrip resonator.

[0014] Meanwhile, the present invention also provides a non-reciprocal electromagnetic wave transmission device, which includes a non-reciprocal power divider, a DC voltage source, and a low-frequency signal source.

[0015] The DC voltage source and low-frequency signal source provide modulation signals to the non-reciprocal power divider through the modulation port.

[0016] The non-reciprocal power divider of this invention requires no magnetic bias material. It employs a time-controlled mechanism to break time-reversal symmetry, thus achieving non-reciprocal power divider operation. Furthermore, controlling the DC bias voltage allows for adjustable operating frequency. Since it requires no magnetic bias material and is integrated with a filter, it offers advantages such as low cost, miniaturization, and circuit integration. In addition to its power distribution function, it also provides filtering and suppression capabilities for out-of-band interference signals.

[0017] To make the above and other objects, features and advantages of the present invention more apparent and understandable, preferred embodiments are described below in detail with reference to the accompanying drawings. Attached Figure Description

[0018] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 This is a top view of the structure of the non-reciprocal power divider of the present invention.

[0020] Figure 2 This is a bottom view of the structure of the non-reciprocal power divider of the present invention;

[0021] Figure 3 This is a partially enlarged view of the metallized via in the non-reciprocal power divider in an embodiment of the present invention;

[0022] Figure 4 This is the test curve of the power divider scattering parameters when only a DC bias voltage signal is applied without a low-frequency modulation signal in an embodiment of the present invention.

[0023] Figure 5 The above are experimental test curves of the scattering parameters of the non-reciprocal power divider after loading a modulated signal in an embodiment of the present invention.

[0024] Figure 6 The above are experimental test curves of the scattering parameters of the non-reciprocal power divider after changing the phase relationship of the modulation signal in this embodiment of the invention.

[0025] Figure 7 The above are test curves of the scattering parameters of the non-reciprocal power divider after reducing the DC bias voltage in this embodiment of the invention.

[0026] Figure 8 The test curves for the scattering parameters of the non-reciprocal power divider after increasing the DC bias voltage are shown in the embodiments of the present invention. Detailed Implementation

[0027] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0028] This invention provides a non-reciprocal power divider, comprising: a dielectric substrate; at least one Wilkinson power divider; wherein the ports of the Wilkinson power divider serve as the radio frequency ports of the non-reciprocal power divider; and wherein...

[0029] The Wilkinson power divider is disposed on the top surface of the dielectric substrate, and each branch of the Wilkinson power divider includes a filter, the filter being composed of at least two resonators;

[0030] The back side of the dielectric substrate is provided with multiple varactor diodes, multiple signal feed circuits, multiple metallized vias and multiple modulation ports; the modulation ports are used to receive modulation signals, each modulation port is connected to a metallized via through a signal feed circuit, one end of each varactor diode is connected to one end of a resonator through a metallized via, and the other end of each varactor diode is grounded.

[0031] This invention relates to a non-reciprocal power divider based on time-spaced operation, which achieves non-reciprocal electromagnetic wave transmission without the need for any magnetic bias material. The transmission direction of the electromagnetic waves can be controlled by adjusting the phase relationship of each low-frequency modulation signal; and the reconfigurable operating frequency can be achieved by adjusting the DC bias voltage applied to the varactor diode.

[0032] The non-reciprocal power divider provided by this invention applies a modulation signal to the modulation port, thereby breaking the time-reversal symmetry using a time-controlled method, and realizing a non-reciprocal radio frequency device without any magnetic materials. In the embodiments of this invention, the general implementation method of time-controlled modulation is as follows: discretely applying time-varying modulation signals and controlling the frequency, amplitude, and initial phase of each modulation signal to achieve non-reciprocal propagation of electromagnetic waves.

[0033] With the gradual large-scale commercial deployment of 5G and the in-depth research on B5G / 6G mobile communication, mobile communication systems are constantly developing towards integration, and the requirements for the integration of radio frequency devices are becoming increasingly higher. The non-reciprocal device based on time-conditioning mechanism provided in this invention does not require magnetic material biasing, has the characteristics of being compatible with CMOS process, and can be integrated with system circuits. Therefore, it has great application prospects in circuit miniaturization and integration.

[0034] The technical solution of the present invention will be further described in detail below with reference to a specific embodiment.

[0035] The non-reciprocal power divider based on time-spaced regulation provided in this embodiment is implemented by integrating a Wilkinson power divider and a filter. In this embodiment of the invention, the non-reciprocal power divider includes: a dielectric substrate, several microstrip resonators, several RF ports, several modulation signal input terminals, several inductors, and several varactor diodes.

[0036] Figure 1 The image shown is a top view of the structure of the non-reciprocal power divider provided in this embodiment. The power divider provided in this embodiment is a one-to-two equal power divider.

[0037] The top surface of the dielectric substrate includes: three RF ports, a Wilkinson power divider 102 (1 to 2), and each power divider branch contains a filter. Figure 1 In one embodiment, the filter is a third-order filter, which consists of three interleaved resonators 1031.

[0038] In this embodiment, the Wilkinson power divider 102 is implemented using a microstrip structure, which consists of a microstrip line structure 1021 with a characteristic impedance of 50 ohms, a microstrip line structure 1022 with a length of one-quarter wavelength and a characteristic impedance of 70.7 ohms, a microstrip line structure 1023 with a characteristic impedance of 50 ohms, and a resistor 1024 with a resistance of 100 ohms.

[0039] The two branches of the Wilkinson power divider each have a third-order microstrip filter cascaded after the microstrip line structure 1023. The coupling output of the third-order filter is a microstrip line structure 1025 with a characteristic impedance of 50 ohms, which are RF port 2 and RF port 3, respectively.

[0040] RF port 1, RF port 2, and RF port 3 are the input and output ports for RF signals. If the RF signal is fed in from RF port 1, then RF port 2 and RF port 3 are the output ports for the RF signal; if the RF signal is fed in from RF port 2 and RF port 3, then RF port 1 is the output port for the RF signal.

[0041] Each third-order filter consists of three microstrip resonators. The first branch includes resonators 1031, 1032, and 1033, and the second branch includes resonators 1034, 1035, and 1036. The three microstrip resonators in each branch are placed alternately. The coupling strength can be effectively controlled by controlling the spacing between the microstrip resonators. One end of each microstrip resonator is connected to a varactor diode on the back side through a metallized via.

[0042] like Figure 2 The diagram shown is a schematic of the bottom of the dielectric substrate in an embodiment of the present invention. The bottom of the dielectric substrate in this embodiment includes: a six-channel modulation signal feed circuit, a six-channel modulation signal terminal, six inductors, and six varactor diodes.

[0043] On the copper-clad substrate on the back of the dielectric substrate, there is a six-channel modulation signal feed circuit 20, where each low-frequency modulation signal and DC bias voltage signal are fed into the modulation signal feed circuit from the modulation port.

[0044] The six-channel modulation signal feed circuit employs a coplanar waveguide structure to transmit low-frequency modulation signals and DC bias voltage signals. In this embodiment, the characteristic impedance of the coplanar waveguide is designed to be 50 ohms. The end of each modulation signal feed circuit is connected to the metallized via 30 by an inductor to increase the isolation between the RF signal port and the modulation signal port.

[0045] One end of the varactor diode is connected to the microstrip resonator via a metallized via, and the other end is connected to ground. The varactor diode operates in a reverse-biased state, functioning as a capacitor. For example... Figure 3The diagram shown is a schematic representation of the connection between the metallized via 30, the inductor 40, and the varactor diode 50 in an embodiment of the present invention.

[0046] After a low-frequency modulation signal with a DC bias voltage is fed into the modulation port 301, the microstrip resonator 1 connected to the varactor diode also becomes a time-varying resonator. Similarly, after a low-frequency modulation signal with a DC bias voltage is fed into modulation port 302, the microstrip resonator 1032 connected to the varactor diode also becomes a time-varying resonator; after a low-frequency modulation signal with a DC bias voltage is fed into modulation port 303, the microstrip resonator 1033 connected to the varactor diode also becomes a time-varying resonator; after a low-frequency modulation signal with a DC bias voltage is fed into modulation port 304, the microstrip resonator 1034 connected to the varactor diode also becomes a time-varying resonator; after a low-frequency modulation signal with a DC bias voltage is fed into modulation port 305, the microstrip resonator 1035 connected to the varactor diode also becomes a time-varying resonator; after a low-frequency modulation signal with a DC bias voltage is fed into modulation port 306, the microstrip resonator 1036 connected to the varactor diode also becomes a time-varying resonator.

[0047] The non-reciprocal power divider in this embodiment of the invention is symmetrical, and the two branches are completely identical. The time-varying control method is as follows: modulation port 301, modulation port 302, and modulation port 303 are sequentially fed with a time-varying low-frequency modulation signal with DC bias.

[0048] The frequency of the low-frequency modulated signal is:

[0049] ω m =2πf m

[0050] Phase is (i corresponds to modulation port numbers 301, 302, and 303).

[0051] At this point, the capacitance values ​​of each varactor diode change with time near the static point as follows:

[0052]

[0053] In the formula, C0 is the static capacitance value, which is determined by the DC bias voltage. This static capacitance value will affect the resonant frequency of the resonator, and thus affect the operating frequency of the non-reciprocal power divider.

[0054] In practical engineering applications, varactor diodes will have a capacitance-voltage curve, that is, the relationship between the capacitance value and the bias voltage. This relationship curve is usually provided by the datasheet of the selected varactor diode.

[0055] Secondly, static refers to the varactor diode without a low-frequency time-varying modulation signal (dynamic signal) applied, only a DC bias voltage applied. Since only a DC bias voltage exists (which does not change with time, we call it static), the capacitance value presented by the varactor diode at this time is called the static capacitance value (which does not change with time). This capacitance value can be determined by the relationship curve between the capacitance value and the bias voltage, i.e., by referring to the product datasheet of the selected varactor diode. Therefore, the static capacitance value can be determined based on the DC bias voltage.

[0056] Δ m =Δ C / C0, is the modulation coefficient (0 < Δ). m <1),Δ C The amplitude of the capacitance fluctuation is controlled by the amplitude of the modulation signal.

[0057] Meanwhile, modulation port 304 is fed with the same time-varying low-frequency modulation signal with DC bias as modulation port 301, modulation port 305 is fed with the same modulation port 302, and modulation port 306 is fed with the same modulation port 303. These signals include the same DC bias voltage value, the same low-frequency modulation signal frequency, amplitude, and initial phase.

[0058] The DC bias voltage fed into the modulation port is controlled by an external DC voltage source; the low-frequency modulation signal fed into the modulation port is controlled by an external low-frequency signal source. The DC bias voltage acts on the varactor diode, and the magnitude of the bias voltage directly affects the operating frequency of the power divider; its initial value needs to be determined based on the datasheet of the selected varactor diode. The frequency of the low-frequency modulation signal should be less than the passband bandwidth of the integrated filter. The amplitude of the low-frequency modulation signal affects the modulation coefficient Δ. m The initial value of the modulation coefficient can be set to 0.1; the initial value of the phase of the low-frequency modulation signal can be between 30 degrees and 120 degrees.

[0059] In implementing this invention, based on the specific operating frequency requirements of the required non-reciprocal power divider, the DC bias voltage, low-frequency modulation signal frequency, low-frequency modulation signal amplitude, and low-frequency modulation signal phase are comprehensively adjusted to achieve the optimal response of the non-reciprocal power divider. Control of the radio frequency signal transmission is achieved by adjusting the phase of the low-frequency modulation signal fed into the adjustment port.

[0060] When the phases of the low-frequency modulation signals fed into modulation ports 301, 302, and 303 sequentially satisfy... At that time, among them With a stepped phase, the radio frequency signal can be evenly distributed from radio frequency port 1 to radio frequency port 2 and radio frequency port 3, but the radio frequency signal cannot be effectively transmitted from radio frequency port 2 and radio frequency port 3 to radio frequency port 1.

[0061] Conversely, when the phases of the low-frequency modulation signals fed into modulation ports 301, 302, and 303 sequentially satisfy... At this time, radio frequency signals can be transmitted from radio frequency port 2 and radio frequency port 3 to radio frequency port 1, but radio frequency signals cannot be effectively transmitted from radio frequency port 1 to radio frequency port 2 and radio frequency port 3, thus realizing the non-reciprocal transmission of electromagnetic waves.

[0062] The above and In this context, i is used for counting, i = 1, 2, ..., n; n is the filter order.

[0063] In a specific embodiment, if the filter integrated in each branch of the power divider is of the third order, that is, three modulation signals need to be loaded, then i = 1, 2, 3.

[0064] If the filter integrated in each branch of the power divider is of the second order, then i = 1, 2.

[0065] If the filter integrated in each branch of the power divider is of the fifth order, then i = 1, 2, 3, 4, 5.

[0066] In summary, the value of i starts from 1, and the maximum value is the order of the integrated filter.

[0067] Changing the DC bias voltage fed into the modulation port alters the static capacitance of the varactor diode, thereby controlling the operating frequency of the non-reciprocal power divider. Decreasing the DC bias voltage increases the static capacitance of the varactor diode, thus lowering the operating frequency of the non-reciprocal power divider; conversely, increasing the DC bias voltage decreases the static capacitance, thus increasing the operating frequency of the non-reciprocal power divider.

[0068] Furthermore, in the non-volatile power divider provided in this embodiment of the invention, after removing the low-frequency modulation signal from modulation signal ports 301, 302, 303, 304, 305, and 306, the electromagnetic wave transmission within the power divider provided in this embodiment of the invention is completely reciprocal.

[0069] Embodiments of the present invention Figure 1 and Figure 2 The following explanation uses only a 1-to-2 Wilkinson power divider and a third-order filter as examples. By adopting the technical solution described in this invention, any 1-to-multiple Wilkinson power divider can be integrated with any second-order or higher filter according to actual engineering needs, thereby realizing the required non-reciprocal power divider. That is, it is not limited to the implementation methods mentioned in the embodiments of this invention.

[0070] The non-reciprocal power divider provided in this embodiment of the invention does not require any magnetic material bias. It uses a time-controlled method to break the time reversal symmetry to achieve a non-reciprocal power divider. Furthermore, by controlling the value of the DC bias voltage, a non-reciprocal power divider with adjustable operating frequency can be achieved.

[0071] The non-reciprocal power divider provided in this embodiment of the invention does not require any magnetic material bias and is integrated with the filter. It has advantages such as low cost, miniaturization, and the ability to be integrated with circuits. In addition to the function of power divider energy distribution, it also has the ability to filter and suppress out-of-band interference signals.

[0072] In this embodiment of the invention, the dielectric substrate used is an F4B substrate with a relative permittivity of 2.55, a loss tangent of 0.0015, a thickness of 1.27 mm, and dimensions of l1 = 114 mm and w1 = 69.4 mm. Figure 1 As shown in the top view, the non-reciprocal power divider of the present invention is structurally symmetrical.

[0073] The parameters of the Wilkinson power divider integrated in this embodiment of the invention are as follows:

[0074] The first part of the Wilkinson power divider microstrip structure, 1021, has a characteristic impedance of 50 ohms, a length l2 = 15 mm, and a width of 3.4 mm.

[0075] The Wilkinson power divider's transition band 1022 has a characteristic impedance of 70.7 ohms, a length l3 = 20.4 mm, a width of 1.85 mm, and a spacing g3 = 1.65 mm.

[0076] The third part of the microstrip structure of the Wilkinson power divider, 1023, has a characteristic impedance of 50 ohms, a length of l4 = 43.7 mm, a length of l5 = 6.7 mm, and a width of 3.4 mm.

[0077] The resistor 1024, which is welded between the two branches of the Wilkinson power divider, has a resistance of 100 ohms.

[0078] The resonators 1031 and 1033 of the microstrip structure integrated in this invention have the same length, l8 = 25 mm, and the resonator 1032 has a length of l9 = 24.4 mm. The width of the microstrip resonators is 1.6 mm.

[0079] When optimizing the design of a microstrip line filter, it is necessary to pay attention to adjusting the spacing between each resonator to achieve good impedance matching. In this preferred example, the spacing g1 = 0.5 mm and g2 = 2.4 mm.

[0080] The diameter of the metallized via at the end of the microstrip resonator is 0.5 mm.

[0081] RF port 2 and RF port 3 adopt a microstrip line structure with a characteristic impedance of 50 ohms, i.e., w2 = 3.4 mm, and the length dimensions of the microstrip line structure are l6 = 28.3 mm and l7 = 16.7 mm.

[0082] In this embodiment of the invention, the varactor diode is an SMV1232, and the inductor is a surface-mount inductor with a value of 52nH. The characteristic impedance of the coplanar waveguide is 50 ohms, i.e., g4 = 0.22mm, w3 = 3mm, and the length of the coplanar waveguide is l. 10 =10.3mm, l 11 =8mm.

[0083] like Figure 3 As shown, a circular surface with a diameter of Φ1 = 2mm is removed from the metal base plate, and a metal circular surface with a diameter of Φ2 = 1mm is placed to fix and solder the varactor diode and the inductor.

[0084] The radio frequency (RF) signal is fed in from RF port 1 or RF ports 2 and 3. The DC bias voltage and low-frequency modulation signal are fed in sequentially from modulation ports 301, 302, and 303, ensuring that the DC bias voltage and low-frequency modulation signal fed into modulation port 304 are exactly the same as those fed into modulation port 301, modulation port 305 into modulation port 302, and modulation port 306 into modulation port 303. Non-reciprocity of electromagnetic wave transmission is achieved by controlling the frequency, amplitude, and phase relationship of the low-frequency modulation signal.

[0085] When modulation ports 301, 302, 303, 304, 305, and 306 are only loaded with DC bias voltage signals and not with low-frequency modulation signals, the designed power divider is reciprocal, and its test data is as follows: Figure 4 As shown, the return loss S of the power divider 11 The power divider exhibits good return loss characteristics with a loss of less than -10dB near 2.4GHz in the in-band operating frequency band, while also providing good filtering and suppression of out-of-band interference signals.

[0086] from Figure 4 As can be seen, at this time, the radio frequency signal is transmitted from radio frequency port 1 to radio frequency ports 2 and 3 with equal power distribution, and at the same time, the radio frequency signal can also be transmitted from radio frequency ports 2 and 3 to radio frequency port 1, i.e., S 21 =S 12 S 31 =S 13 Since they are equal work points, S 21 =S 31 An additional 2.5 dB of insertion loss is introduced due to the energy losses of lumped devices such as varactor diodes and inductors.

[0087] When low-frequency modulation signals with DC bias are sequentially fed into modulation ports 301, 302, and 303, and the phases of the three modulation signals sequentially satisfy... Step phase At the same time, it ensures that the DC bias voltage and low-frequency modulation signal fed into modulation port 304 are exactly the same as those fed into modulation port 301, modulation port 305 and modulation port 302, and modulation port 306 and modulation port 303, and the non-reciprocal power divider response is as follows: Figure 5 As shown, the DC bias voltage during the test was 1.9V, and the low-frequency modulation signal frequency f was... m =70MHz, modulation coefficient Δ m =0.08.

[0088] from Figure 5 It can be seen that the return loss S of the non-reciprocal power divider 11 It exhibits good return loss characteristics with a loss less than -10dB near 2.4GHz in the in-band operating frequency band, while simultaneously providing good filtering and suppression of out-of-band interference signals. Furthermore, from... Figure 3 It can be seen that S 21 ≠S 12 S 31 ≠S 13 Electromagnetic wave propagation exhibits approximately 10 dB of non-reciprocity; electromagnetic waves can propagate from RF port 1 to RF ports 2 and 3, but cannot propagate from RF ports 2 and 3 back to RF port 1. The invented non-reciprocal power divider possesses excellent port isolation S. 32 Better than 30dB.

[0089] When low-frequency modulation signals with DC bias are sequentially fed into modulation ports 301, 302, and 303, and the phases of the three modulation signals are adjusted sequentially to satisfy… Step phase This ensures that the DC bias voltage and low-frequency modulation signal fed into modulation port 304 are exactly the same as those fed into modulation port 301, modulation port 305 and modulation port 302, and modulation port 306 and modulation port 303, resulting in a non-reciprocal power divider response. For example... Figure 6 As shown, the DC bias voltage during the test was 1.9V, and the low-frequency modulation signal frequency f m =70MHz, modulation coefficient Δ m =0.08.

[0090] from Figure 6 It can be seen that the return loss S of the non-reciprocal power divider 11 It exhibits good return loss characteristics with a loss less than -10dB near 2.4GHz in the in-band operating frequency band, while simultaneously providing good filtering and suppression of out-of-band interference signals. Furthermore, from... Figure 4It can be seen that S 12 ≠S 21 S 13 ≠S 31 Electromagnetic wave propagation exhibits a non-reciprocity of approximately 10 dB. At this point, electromagnetic waves can be transmitted from RF port 2 and RF port 3 to RF port 1, but electromagnetic waves cannot be transmitted from RF port 1 to RF port 2 and RF port 3.

[0091] When low-frequency modulation signals with DC bias are sequentially fed into modulation ports 301, 302, and 303, and the phases of the three modulation signals sequentially satisfy... Step phase At the same time, ensure that the DC bias voltage and low-frequency modulation signal fed into modulation port 304 are exactly the same as those fed into modulation port 301, modulation port 305 and modulation port 302, and modulation port 306 and modulation port 303, and control the DC bias voltage to be 0.4V. At this time, the non-reciprocal power divider response is as follows: Figure 7 As shown, the frequency f of the low-frequency modulation signal in the experiment... m =70MHz, modulation coefficient Δ m =0.08.

[0092] from Figure 7 It can be seen that the return loss S of the non-reciprocal power divider 11 It exhibits good return loss characteristics with a loss less than -10dB near 2.2GHz in the in-band operating frequency band, while simultaneously providing good filtering and suppression of out-of-band interference signals. Furthermore, from... Figure 5 It can be seen that S 21 ≠S 12 S 31 ≠S 13 Electromagnetic wave propagation exhibits approximately 10dB of non-reciprocity. Electromagnetic waves can propagate from RF port 1 to RF ports 2 and 3, but cannot propagate from RF ports 2 and 3 back to RF port 1. Therefore, when the DC bias voltage fed into the modulation port decreases, the operating frequency of the non-reciprocal power divider decreases, achieving adjustable operating frequency.

[0093] When low-frequency modulation signals with DC bias are sequentially fed into modulation ports 301, 302, and 303, and the phases of the three modulation signals sequentially satisfy... Step phase At the same time, ensure that the DC bias voltage and low-frequency modulation signal fed into modulation port 304 are exactly the same as those fed into modulation port 301, modulation port 305 and modulation port 302, and modulation port 306 and modulation port 303, and control the DC bias voltage to 3.5V. At this time, the non-reciprocal power divider response is as follows: Figure 8 As shown, the frequency f of the low-frequency modulation signal in the experiment...m =70MHz, modulation coefficient Δ m =0.08.

[0094] from Figure 8 It can be seen that the return loss S of the non-reciprocal power divider 11 It exhibits good return loss characteristics with a loss less than -10dB near 2.6GHz in the in-band operating frequency band, while simultaneously providing good filtering and suppression of out-of-band interference signals. Furthermore, from... Figure 8 It can be seen that S 21 ≠S 12 S 31 ≠S 13 Electromagnetic wave propagation exhibits approximately 10dB of non-reciprocity. Electromagnetic waves can propagate from RF port 1 to RF ports 2 and 3, but cannot propagate from RF ports 2 and 3 back to RF port 1. Therefore, as the DC bias voltage fed into the modulation port increases, the operating frequency of the non-reciprocal power divider increases, achieving adjustable operating frequency characteristics.

[0095] In addition, from Figures 4 to 8 It can be observed that due to the use of lumped devices such as varactor diodes and inductors, and the partial energy coupling between modulated resonators, some energy is converted into higher-order harmonics.

[0096] As can be seen from the above embodiments, unlike existing radio frequency non-reciprocal devices that rely on biasing with magnetic materials such as ferrites, the non-reciprocal power divider provided by this invention can employ a time-controlled mechanism. This means that by discretely applying low-frequency modulation signals with DC bias voltages to the resonator and controlling the phase relationship of the modulation signals, the time-reversal symmetry is broken, thereby achieving non-reciprocal transmission of electromagnetic waves. The non-reciprocal power divider provided by this invention no longer requires biasing with magnetic materials such as ferrites, thus eliminating the incompatibility issues between the magnetic material lattice and CMOS integrated circuit fabrication processes.

[0097] Preferred embodiments of the invention have been described above with reference to the accompanying drawings. Many features and advantages of these embodiments are apparent from this detailed description, and therefore the appended claims are intended to cover all such features and advantages of these embodiments that fall within their true spirit and scope. Furthermore, since many modifications and alterations will readily occur to those skilled in the art, the embodiments of the invention are not intended to be limited to the precise structures and operations illustrated and described, but rather to encompass all suitable modifications and equivalents falling within their scope.

[0098] Specific embodiments have been used to illustrate the principles and implementation methods of this invention. The descriptions of the embodiments above are only for the purpose of helping to understand the method and core ideas of this invention. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this invention. Therefore, the content of this specification should not be construed as a limitation of this invention.

Claims

1. A non-reciprocal power divider, characterized by, The non-reciprocal power divider comprises a dielectric substrate and at least one Wilkinson power divider; ports of the Wilkinson power divider serve as radio frequency ports of the non-reciprocal power divider; the Wilkinson power divider adopts a microstrip structure, which comprises a microstrip line structure with a characteristic impedance of 50 ohms, a microstrip line structure with a characteristic impedance of 70.7 ohms and a length of a quarter of a wavelength, a microstrip line structure with a characteristic impedance of 50 ohms, and a resistor with a resistance of 100 ohms; a radio frequency signal is fed into or output from the non-reciprocal power divider through the microstrip line structure with a characteristic impedance of 50 ohms, the microstrip line structure with a characteristic impedance of 70.7 ohms and a length of a quarter of a wavelength, and the microstrip line structure with a characteristic impedance of 50 ohms in sequence. The Wilkinson power divider is arranged on a top surface of the dielectric substrate, each branch of the Wilkinson power divider comprises a filter, the filter is composed of at least two resonators, the resonators are spaced apart by a preset distance, and the resonators of each branch are staggered in space. A back surface of the dielectric substrate is provided with a plurality of varactor diodes, a plurality of signal feeding circuits, a plurality of metallized vias, and a plurality of modulation ports; the modulation ports are used to receive modulation signals, each modulation port is connected to a metallized via through a signal feeding circuit, one end of each varactor diode is connected to one end of a resonator through a metallized via, and the other end of each varactor diode is grounded; the modulation signals comprise a direct current bias voltage signal and a low frequency modulation signal, so that the resonator connected to the varactor diode becomes a time-varying resonator when the modulation port feeds in the low frequency modulation signal with the direct current bias voltage. The non-reciprocal power divider comprises two branches, a plurality of groups of modulation ports on the two branches are mutually symmetrical, each group of symmetrical modulation ports is connected to a corresponding resonator of a different branch, and the direct current bias voltage and the low frequency modulation signal fed in by the mutually symmetrical modulation ports are completely the same, and the phases of the i-th modulation signals of each branch satisfy: φ_i = (i-1)Δφ or φ_i = -(i-1)Δφ, where i is a counter, i = 1, 2, …, n, n is a filter order, and Δφ is a step phase; The back surface of the dielectric substrate is also provided with a plurality of inductors, and the end of each signal feeding circuit is connected to a metallized via through an inductor.

2. The nonreciprocal power divider as claimed in claim 1, wherein The signal feeding circuit is a coplanar waveguide structure circuit.

3. The nonreciprocal power divider as claimed in claim 1, wherein The resonator is a microstrip resonator.

4. A non-reciprocal electromagnetic wave transmission device, the device comprising the non-reciprocal power divider of any one of claims 1-3, a direct current voltage source, and a low frequency signal source; the direct current voltage source and the low frequency signal source provide modulation signals for the non-reciprocal power divider through the modulation ports.

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