Organic light emitting diode display and method for manufacturing the same

Abstract

An organic light emitting diode display including a first display panel and a manufacturing method thereof are provided. The first display panel includes a first substrate and a transistor disposed on the first substrate. The transistor includes an input electrode and an output electrode. A second display panel is provided, the second display panel including a second substrate, a first electrode disposed on the second substrate, an emission layer disposed on the first electrode, and a second electrode disposed on the emission layer. A first connector is disposed on the output electrode and is located between the first display panel and the second display panel. The second display panel also includes a first opening formed in the second substrate and a pixel electrode connector disposed in the first opening. The output electrode of the transistor is electrically connected to the first electrode through the first connector, and the first electrode and the first connector are electrically connected through the pixel electrode connector.

Description

[0001] This application claims the priority benefit of Korean Patent Application No. 10-2018-0168648 filed on December 24, 2018 in the Korean Intellectual Property Office, the contents of which are incorporated herein by reference in their entirety. Technical Field

[0002] The present disclosure relates to an organic light emitting diode display and a method for manufacturing the same. Background Art

[0003] The organic light emitting diode display includes two electrodes and an organic emission layer between the two electrodes. Electrons injected from one electrode and holes injected from the other electrode are combined with each other in the organic emission layer to form excitons, and light is emitted when the excitons release energy.

[0004] The organic light emitting diode display includes a plurality of pixels including organic light emitting diodes as self-emitting diode elements. Each pixel includes a plurality of transistors for driving the organic light emitting diodes and at least one capacitor.

[0005] In an organic light emitting diode display, a plurality of transistors and capacitors are generally formed on a substrate, and an organic light emitting diode including a pixel electrode, an organic emission layer, and a common electrode is stacked on the plurality of transistors and capacitors. Summary of the invention

[0006] Exemplary embodiments of the present invention provide a high-resolution organic light emitting diode display by separately manufacturing a transistor display panel and a light emitting diode display panel and combining the transistor display panel and the light emitting diode display panel which are electrically connected through a conductive connection.

[0007] According to an exemplary embodiment of the present invention, an organic light emitting diode display including a first display panel is provided. The first display panel includes a first substrate and a transistor disposed on the first substrate. The transistor includes an input electrode and an output electrode. A second display panel is provided, the second display panel including a second substrate, a first electrode disposed on the second substrate, an emission layer disposed on the first electrode, and a second electrode disposed on the emission layer. A first connector is disposed on the output electrode and is located between the first display panel and the second display panel. The second display panel also includes a first opening formed in the second substrate and a pixel electrode connector disposed in the first opening. The output electrode of the transistor is electrically connected to the first electrode through the first connector, and the first electrode and the first connector are electrically connected through the pixel electrode connector.

[0008] According to an exemplary embodiment of the present invention, the first substrate is a wafer.

[0009] According to an exemplary embodiment of the present invention, the first display panel includes a plurality of first display panels, a plurality of first connectors are disposed between the first display panel and the second display panel, and the plurality of first display panels are connected to the second display panel through the plurality of first connectors.

[0010] According to an exemplary embodiment of the present invention, an output electrode of a transistor formed in a first display panel is electrically connected to a first electrode of a second display panel through one first connection member among a plurality of first connections.

[0011] According to an exemplary embodiment of the present invention, at least one sealing portion is disposed between a pair of adjacent first display panels among the plurality of first display panels, and the at least one sealing portion overlaps side surfaces of the first display panel and a lower surface of the second display panel.

[0012] According to an exemplary embodiment of the present invention, the first display panel further includes a channel region, a source region and a drain region disposed in the first substrate. A gate insulating layer is disposed on the first substrate. A gate electrode is disposed on the gate insulating layer, and an interlayer insulating layer is disposed on the gate electrode.

[0013] According to an exemplary embodiment of the present invention, the input electrode and the output electrode are a source electrode and a drain electrode, and the input electrode and the output electrode are each at least partially disposed on the interlayer insulating layer and connected to the source region and the drain region, respectively.

[0014] According to an exemplary embodiment of the present invention, the first display panel further includes an opening penetrating the first substrate, the gate insulating layer and the interlayer insulating layer, the drain electrode connector is disposed in the opening, and the output electrode and the first connector are electrically connected through the drain electrode connector.

[0015] According to an exemplary embodiment of the present invention, the first display panel includes a plurality of first display panels, two or more first connecting members are arranged between at least one first display panel of the plurality of first display panels and the second display panel, and the at least one first display panel overlaps with the second display panel and the two or more first connecting members.

[0016] According to an exemplary embodiment of the present invention, an output electrode of a transistor is disposed in a first display panel and is electrically connected to a first electrode disposed in a second display panel through one first connection member among a plurality of first connections.

[0017] According to an exemplary embodiment of the present invention, an upper surface of at least one first substrate and a lower surface of the second substrate face each other with a gap therebetween, and the upper surface of the at least one first substrate and the lower surface of the second substrate are coupled by a first connector.

[0018] According to an exemplary embodiment of the present invention, the first connection member is a bump or an anisotropic conductive film (ACF).

[0019] According to an exemplary embodiment of the present invention, a method for manufacturing an organic light emitting diode display includes forming a first substrate on an auxiliary substrate, and coating and patterning a photoresist on the first substrate to form a first opening in the first substrate. A first electrode is formed on the first substrate overlapping the first opening. An emission layer and a second electrode are sequentially formed on the first electrode. The auxiliary substrate is separated from the first substrate to form a light emitting diode display panel. The light emitting diode display panel includes a first substrate, a first electrode, an emission layer, and a second electrode. A pixel electrode connector is formed in the first opening. A first connector is formed on the pixel electrode connector. A transistor display panel is set to face the light emitting diode display panel, and a first connector is set between them. The transistor display panel includes a transistor having an output electrode. The output electrode overlaps the first connector, and the light emitting diode display panel and the transistor display panel are connected by the first connector.

[0020] According to an exemplary embodiment of the present invention, the output electrode of the transistor is electrically connected to the first electrode through the first connection member.

[0021] According to an exemplary embodiment of the present invention, a transistor display panel is manufactured by forming a second substrate using a wafer. A channel region, a source region, and a drain region are formed in the second substrate. An insulating layer is formed on the second substrate. An input electrode is formed, and the input electrode and the output electrode are at least partially overlapped with the surface of the insulating layer.

[0022] According to an exemplary embodiment of the present invention, a second opening is formed in the first surface of the second substrate, and the second opening penetrates the second substrate and the insulating layer. A drain electrode connector is formed in the second opening, and the output electrode and the first connector are electrically connected through the drain electrode connector.

[0023] According to an exemplary embodiment of the present invention, the first surface of the second substrate of the transistor display panel and the lower surface of the light emitting diode display panel face each other.

[0024] According to an exemplary embodiment of the present invention, two or more transistor display panels are overlapped with a light emitting diode display panel.

[0025] According to an exemplary embodiment of the present invention, two or more first connectors are formed between the first display panel and the second display panel. The output electrode of the transistor formed in the transistor display panel is electrically connected to the first electrode formed in the light emitting diode display panel through one of the first connectors.

[0026] According to an exemplary embodiment of the present invention, a light emitting diode display panel is irradiated with a long wavelength laser to align the light emitting diode display panel with a transistor display panel.

[0027] According to an exemplary embodiment of the present invention, a transistor display panel includes an input electrode and an output electrode. The light emitting diode display panel is arranged opposite to the transistor display panel, and a gap is arranged between them. The pixel electrode connector is arranged in the light emitting diode display panel and connected to the pixel electrode. The first connector is arranged between the transistor display panel and the light emitting diode display panel. The first connector, the pixel electrode connector, the output electrode and the pixel electrode are overlapped in the thickness direction, and the first connector and the pixel electrode connector are conductive. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 is a schematic plan view showing an organic light emitting diode display according to an exemplary embodiment of the present invention;

[0029] Figure 2 is a schematic perspective view showing an organic light emitting diode display according to an exemplary embodiment of the present invention;

[0030] Figure 3 According to an exemplary embodiment of the present invention, Figure 1 A cross-sectional view taken along line III-III';

[0031] Figures 4 to 14 is a cross-sectional view illustrating a method of manufacturing an organic light emitting diode display according to an exemplary embodiment of the present invention;

[0032] Fig.15 is a cross-sectional view showing an organic light emitting diode display according to an exemplary embodiment of the present invention;

[0033] Figures 16 to 19 is a cross-sectional view illustrating a method of manufacturing an organic light emitting diode display according to an exemplary embodiment of the present invention; and

[0034] Fig. 20 is a cross-sectional view showing an organic light emitting diode display according to an exemplary embodiment of the present invention. DETAILED DESCRIPTION

[0035] Hereinafter, the present invention will be described more fully with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. However, the present invention may be embodied in many different forms and should not be construed as limited to the exemplary embodiments set forth herein.

[0036] In the following description and drawings, the same reference numerals may refer to the same elements. In addition, in order to facilitate the description of technical contents, the thickness, ratio and size of elements may be exaggerated in the drawings.

[0037] In the accompanying drawings, for better understanding and ease of description, the size and thickness of each element are presented, however, the present invention is not necessarily limited thereto. In the accompanying drawings, the thickness of layers, films, panels, regions, etc. may be exaggerated for clarity. It will also be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" another element, the element may be directly on the other element, or there may be intermediate elements. Conversely, when an element is referred to as being "directly on" another element, there are no intermediate elements.

[0038] Furthermore, in the specification, the word “on” or “over” means located on or below a target portion, and does not necessarily mean located on the upper side of the target portion based on the direction of gravity.

[0039] The organic light emitting diode display according to an exemplary embodiment of the present invention is formed by manufacturing the first display panel 100 and the second display panel 200 and combining the first display panel 100 and the second display panel 200 through the first connection member 70 .

[0040] Reference Figures 1 to 14 An organic light emitting diode display according to an exemplary embodiment of the present invention is described.

[0041] Figure 1 is a schematic plan view showing an organic light emitting diode display according to an exemplary embodiment of the present invention. Figure 2 is a schematic perspective view showing an organic light emitting diode display according to an exemplary embodiment of the present invention. Figure 3 It is along Figure 1 A cross-sectional view taken along line III-III'. Figures 4 to 14 is a cross-sectional view illustrating a method of manufacturing an organic light emitting diode display according to an exemplary embodiment of the present invention.

[0042] Reference Figure 1 and Figure 2 , an organic light emitting diode display according to an exemplary embodiment of the present invention includes a first display panel 100 and a second display panel 200. The first display panel 100 may be formed in plural, and the second display panel 200 may be a single one.

[0043] The first display panel 100 is overlapped with the second display panel 200. Figure 1 and Figure 2 As depicted in FIG. 1 , a plurality of first display panels 100 are arranged in a matrix and overlapped with a second display panel 200. Figure 1 and Figure 2 , eight first display panels 100 are arranged in a 2×4 matrix form below the second display panel 200. The number of first display panels 100 stacked on one second display panel 200 may be variously changed according to the relative size of each display panel.

[0044] In addition, although the first display panel 100 and the second display panel 200 according to the exemplary embodiment are shown as rectangular, the shape of the first display panel 100 may be variously changed according to the shape of the second display panel 200. For example, a single first display panel 100 or a collective shape of a plurality of first display panels 100 may have a shape corresponding to that of the second display panel 200 when viewed in a plan view.

[0045] like Figure 1 and Figure 2 As shown in FIG. 1 , a plurality of first display panels 100 are connected to the second display panel 200 through the first connection members 70. For example, two first connection members 70 are disposed on the short sides of the upper surface of at least one first display panel 100, and three first connection members 70 are disposed on the long sides of the upper surface of the first display panel 100. The first connection member 70 is disposed on the lower surface of the second display panel 200. For example, the first connection member 70 is connected to the lower surface of the second display panel 200.

[0046] The first connection member 70 is electrically connected to the pixel electrode 191 (hereinafter referred to as Figure 3 ) and the drain electrode 156 of the transistor formed in the first display panel 100 (shown below in Figure 3 ). One pixel is electrically connected to one pixel electrode 191. According to an exemplary embodiment of the present invention, by using one first connection member 70 for each pair, a plurality of pixel electrodes 191 and a plurality of drain electrodes 156 are connected in a one-to-one structure. The first connection member 70 may be formed as a bump, an anisotropic conductive film, or the like. For example, when the first connection member 70 includes an anisotropic conductive film formed between the first display panel 100 and the second display panel 200, the drain electrode 156 may be electrically connected to the pixel electrode 191 through a plurality of small conductive balls included in the anisotropic conductive film (ACF).

[0047] The sealant is disposed between adjacent first display panels 100 among the plurality of first display panels 100 and forms a seal portion 30. The seal portion 30 contacts the side surfaces of the adjacent first display panels 100 and the lower surface of the second display panel 200. The seal portion 30 may protect the first display panel 100 from moisture and air and may adhere the first display panel 100 to the second display panel 200.

[0048] According to an exemplary embodiment of the present invention, the second display panel 200 and the first display panel 100 manufactured separately are connected by the first connection member 70. The first display panel 100 and the second display panel 200 can be manufactured by different process conditions, and the transistor can be formed on a wafer substrate and combined with an organic light emitting diode (OLED) to drive the organic light emitting diode (OLED). For example, when the transistor is formed on a small-sized wafer substrate, more pixels including transistors are formed in the same area, thereby providing a high-resolution display device.

[0049] In addition, since the number of the first display panels 100 attached to the second display panel 200 may vary, a large-area and high-resolution organic light emitting diode display may be provided according to the size of the second display panel 200 .

[0050] Next, refer to Figure 3 A detailed structure of an organic light emitting diode display is described.

[0051] A first display panel 100 formed using a wafer substrate to provide a high-resolution organic light emitting diode display is described.

[0052] The first display panel 100 includes a transistor disposed on a first substrate 110. The first display panel 100 includes a first substrate 110, a channel region 131, a source region 132, a drain region 133, a gate insulating layer 120, a source electrode 155, a drain electrode 156, a gate electrode 121, an interlayer insulating layer 140, and a passivation layer 160. Here, the first display panel 100 may also be referred to as a transistor display panel.

[0053] The first substrate 110 is formed using a wafer substrate. For example, the first substrate 110 may include single crystal silicon, and may be formed by thin-slicing the single crystal silicon into a predetermined thickness and width.

[0054] The first substrate 110 may be a p-type including holes or an n-type including electrons according to the type of silicon used.

[0055] A channel region 131, a source region 132, and a drain region 133 are formed in the first substrate 110. The channel region 131 is a region in the first substrate 110 where impurities are not doped, and the source region 132 and the drain region 133 are regions where impurities are doped.

[0056] When the first substrate 110 is a p-type silicon substrate, the source region 132 and the drain region 133 are doped with electrons to form the channel region 131 as an n-channel. When the first substrate 110 is an n-type silicon substrate, the source region 132 and the drain region 133 are doped with holes to form the channel region 131 as a p-channel. According to an exemplary embodiment of the present invention, a lightly doped drain region (LDD) may be formed between the source region 132 and the channel region 131 and between the drain region 133 and the channel region 131.

[0057] The gate insulating layer 120 covers the first substrate 110, the channel region 131, the source region 132, and the drain region 133, and may be made of silicon oxide (SiO x ) is made.

[0058] The gate electrode 121 is disposed on the gate insulating layer 120 and may be made of a multilayer film or a single layer film of copper (Cu), molybdenum (Mo), aluminum (Al), or titanium (Ti). The gate electrode 121 is disposed to overlap the channel region 131 .

[0059] The interlayer insulating layer 140 covers the gate electrode 121 and the gate insulating layer 120 and may be made of SiO x Made.

[0060] The source electrode 155 and the drain electrode 156 are partially disposed on the interlayer insulating layer 140 and penetrate the interlayer insulating layer 140 and the gate insulating layer 120 in the thickness direction. The source electrode 155 and the drain electrode 156 are connected to the source region 132 and the drain region 133 respectively through the openings 41 formed in the gate insulating layer 120 and the interlayer insulating layer 140.

[0061] The gate electrode 121, the source electrode 155 and the drain electrode 156 together with the channel region 131, the source region 132 and the drain region 133 form a metal-oxide-semiconductor field effect transistor (MOSFET). The source electrode 155 can be an input electrode of the transistor, and the drain electrode 156 can be an output electrode of the transistor. In addition, according to the direction of the applied current, the source electrode 155 and the drain electrode 156 can be changed to an output electrode and an input electrode, respectively. The transistor can be one of a switching transistor, a driving transistor and a compensation transistor provided in a pixel of an organic light emitting diode display. The first substrate 110 on which such a transistor is formed can be referred to as a transistor display panel (hereinafter, also referred to as a first display panel).

[0062] The transistor is provided in the pixel (display area), and the peripheral circuit wiring unit can be formed by simple patterning in the display area except the area where the transistor is formed on the first substrate 110. According to an exemplary embodiment of the present invention, the peripheral circuit wiring unit can be formed on the first substrate 110, thereby reducing the non-display area.

[0063] The passivation layer 160 is disposed on the interlayer insulating layer 140 and covers the interlayer insulating layer 140, the source electrode 155, and the drain electrode 156. The passivation layer 160 may be made of a material such as SiN x and / or SiO x made of inorganic insulating layer.

[0064] The passivation layer 160 has an opening exposing a portion of the drain electrode 156. The opening formed in the passivation layer 160 is formed to connect the drain electrode 156 with the pixel electrode 191.

[0065] The organic light emitting diode display according to an exemplary embodiment of the present invention electrically connects the drain electrode 156 and the pixel electrode 191 through a connector. For example, the pixel electrode 191 can be electrically connected to the drain electrode 156 through a connector without direct contact. The connector includes a first connector 70 and / or a pixel electrode connector 80. The first connector 70 and the pixel electrode connector 80 will be described in detail after first describing the second display panel 200.

[0066] The second display panel 200 includes a pixel electrode 191, an organic emission layer 370, a spacer 350, a common electrode 270, and a thin film encapsulation layer 420 disposed on a second substrate 210. The second display panel 200 may be referred to as a light emitting diode display panel (hereinafter, also referred to as a second display panel).

[0067] The second substrate 210 may be made of a polyimide (PI) film and / or plastic. However, the present invention is not limited thereto, and the second substrate 210 may be formed of an insulating substrate such as glass, quartz and / or ceramic. In addition, the second substrate 210 may include a first opening 51 in which a connector may be provided.

[0068] The pixel electrode 191 is disposed on the second substrate 210 and is made of a material such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In 2 O 3 ) and / or a reflective metal such as lithium (Li), lithium fluoride / aluminum (LiF / Al), Al, silver (Ag), magnesium (Mg), gold (Au), etc.

[0069] The pixel electrode 191 may be electrically connected to the drain electrode 156 through the first opening 51 formed in the second substrate 210 and may be an anode electrode of the organic light emitting diode OLED. The pixel electrode 191 may be referred to as a first electrode of the organic light emitting diode OLED (hereinafter, also referred to as a pixel electrode).

[0070] The partition 350 may be disposed on the upper surface of the second substrate 210 and overlap the edge of the pixel electrode 191. The partition 350 has an opening 351 exposing the pixel electrode 191. The partition 350 may be made of a resin such as a polyacryl resin, a PI resin, and / or a silica-based inorganic material.

[0071] The organic emission layer 370 is disposed in the opening 351 of the partition 350. The organic emission layer 370 includes an emission layer, a hole injection layer (HIL), a hole transport layer (HTL), an electron transport layer (ETL), and / or an electron injection layer (EIL).

[0072] The common electrode 270 is disposed on the partition 350 and the organic emission layer 370. The common electrode 270 may include an organic material such as ITO, IZO, ZnO, In 2 O 3 According to an exemplary embodiment of the present invention, the common electrode 270 may include a reflective metal such as calcium (Ca), lithium fluoride / calcium (LiF / Ca), Ag, Mg, Au, etc. The common electrode 270 may be a cathode of the organic light emitting diode OLED. The pixel electrode 191, the organic emission layer 370, and the common electrode 270 may together constitute the organic light emitting diode OLED. The common electrode 270 may be referred to as a second electrode of the organic light emitting diode OLED (hereinafter, also referred to as a common electrode).

[0073] The thin film encapsulation layer 420 is disposed on the organic light emitting diode OLED and covers the organic light emitting diode OLED. The thin film encapsulation layer 420 may include a plurality of layers, and the uppermost layer of the plurality of layers may be formed as an inorganic layer including an inorganic material. For example, the thin film encapsulation layer 420 may be formed by alternately stacking at least one organic layer and at least one inorganic layer. Here, a plurality of organic layers and inorganic layers may be provided respectively. The organic layer is formed of an organic material, and more preferably, may be a single layer or a stack of layers including polyethylene terephthalate (PET), PI, polycarbonate (PC), epoxy resin, polyethylene (PE) or polyacrylate (PA). More preferably, the organic layer is formed of PA and, for example, includes a material in which a monomer composition is polymerized, the monomer composition including a diacrylate monomer and / or a triacrylate monomer. The monomer composition may also include a monoacrylate monomer. In addition, the monomer composition may include a known photoinitiator such as TPO, but it is not limited thereto. The inorganic layer may be a single layer or a stack of layers including a metal oxide and / or a metal nitride. For example, the inorganic layer may include SiN x 、Alumina (Al 2 O 3 ), silicon dioxide (SiO 2 ) and / or titanium oxide (TiO 2 ).

[0074] The thin film encapsulation layer 420 may protect the organic light emitting diode OLED from external moisture. The thin film encapsulation layer 420 may extend laterally so that the spacer 350 and the common electrode 270 are sealed.

[0075] An optical layer for improving light extraction efficiency and preventing external light reflection may be further included between the thin film encapsulation layer 420 and the common electrode 270 .

[0076] The first connection member 70 may be formed between the first display panel 100 and the second display panel 200, thereby combining the first display panel 100 with the second display panel 200. The first connection member 70 may electrically connect the drain electrode 156 of the first display panel 100 and the pixel electrode 191 provided in the second display panel 200. The first connection member 70 may include a conductive material. The first connection member 70 may be implemented as, for example, a bump, an anisotropic conductive film, etc.

[0077] The pixel electrode connector 80 is formed in the first opening 51 of the second substrate 210. The pixel electrode connector 80 contacts the first connector 70 to electrically connect the pixel electrode 191 and the drain electrode 156. The pixel electrode connector 80 is made of a material having conductivity and may be formed by electroplating.

[0078] Reference Figures 4 to 14 To describe manufacturing Figures 1 to 3 A method for an organic light emitting diode display is shown.

[0079] Figures 4 to 14 is a cross-sectional view illustrating a method of manufacturing an organic light emitting diode display according to an exemplary embodiment of the present invention.

[0080] The method of manufacturing an organic light emitting diode display may include the steps of separately manufacturing a first display panel 100 and a second display panel 200 , and combining the first display panel 100 and the second display panel 200 through a first connector 70 .

[0081] Figures 4 to 12 is a cross-sectional view of a method for manufacturing the second display panel 200 .

[0082] Figure 4 2 shows a step of preparing the second substrate 210 of the second display panel 200. Figure 4 , the second substrate 210 may include a PI film formed on the auxiliary substrate 20, and the auxiliary substrate 20 may include glass.

[0083] Figure 5 and Figure 6 The step of forming the first opening 51 in the second substrate 210 is shown.

[0084] exist Figure 5 In the embodiment of the present invention, a photoresist 50 is coated and patterned on the second substrate 210. The photoresist 50 may be formed corresponding to a portion of the second substrate 210 that is not etched. For example, the photoresist 50 may be disposed on the second substrate 210 to include a predetermined gap corresponding to a region in which the first opening 51 is to be formed. According to an exemplary embodiment of the present invention, the predetermined gap may be formed before the photoresist 50 is stacked on the second substrate 210.

[0085] exist Figure 6 In the embodiment, the first opening 51 is formed corresponding to a portion of the second substrate 210 where the photoresist 50 is not coated. For example, the portion of the second substrate 210 where the photoresist 50 is not coated is removed.

[0086] Figures 7 to 10 Each additional step for completing a light emitting diode display panel according to an exemplary embodiment of the present invention is shown.

[0087] exist Figure 7 , the photoresist 50 is removed from the second substrate 210, and the pixel electrode 191 is disposed across the first opening 51 of the second substrate 210. For example, the pixel electrode 191 may be disposed to overlap the first opening 51 in the thickness direction. A portion of the pixel electrode 191 may be exposed by the first opening 51. For example, the lower surface of the pixel electrode 191 may be exposed by the first opening 51. The edge of the pixel electrode 191 may be disposed at the edge of the first opening 51.

[0088] exist Figure 8 In the embodiment, a partition 350 may be formed on the edge of the pixel electrode 191, and an opening 351 (see FIG. 1 ) of the partition 350 may be formed on the edge of the pixel electrode 191. Figure 3 ) to form an organic emission layer 370. A common electrode 270 is formed on the organic emission layer 370 and the partition 350 (see Fig. 9 In addition, in organic light emitting diodes OLED (see Fig. 9 ) is formed on the thin film encapsulation layer 420, which can protect the organic emission layer 370 and the common electrode 270 (see Fig. 9 ) from external moisture.

[0089] Fig. 920 is shown as a step of separating the auxiliary substrate 20 from the second substrate 210. The auxiliary substrate 20 may be separated by laser irradiation directed at a boundary between the auxiliary substrate 20 and the second substrate 210, and according to the laser irradiation method adopted, electro laser plating (ELP), solid laser plating (SLP), or non-laser plating (NLP) may be applied. Since the adhesion between the second substrate 210 and the auxiliary substrate 20 is not uniform due to the first opening 51 of the second substrate 210, the auxiliary substrate 20 may not be properly separated. When the auxiliary substrate 20 is separated according to the laser irradiation method, the auxiliary substrate 20 may be separated according to the laser irradiation method. Figure 4 When the second substrate 210 and the auxiliary substrate 20 are prepared, a charge layer having different charges may be formed between the second substrate 210 and the auxiliary substrate 20, so that the auxiliary substrate 20 may be easily separated by electrostatic attraction. According to an exemplary embodiment of the present invention, in order to facilitate complete separation of the auxiliary substrate 20, Fig. 9 After the step of separating the auxiliary substrate 20 from the second substrate 210, Figure 5 and Figure 6 The step of forming the first opening 51 in the second substrate 210 is shown in FIG. Fig. 9 As depicted in , the first opening 51 may be formed after removing the auxiliary substrate 20 from the second substrate 210 .

[0090] Fig.10 A second display panel 200 including a first opening 51 provided in an organic light emitting diode display according to an exemplary embodiment of the present invention is illustrated.

[0091] Fig.11 and Fig.12 A step for forming the pixel electrode connection member 80 that can couple the first display panel 100 to the second display panel 200 is shown.

[0092] exist Fig.11 In the embodiment, when the pixel electrode connection member 80 is formed, the pixel electrode connection member 80 may be formed by using a metal paste inkjet method.

[0093] Fig.12 It shows that Fig.11 An exemplary embodiment of the present invention in which the pixel electrode connection member 80 is formed by a metal paste inkjet method is depicted in FIG. The first opening 51 of the second substrate 210 may be filled with a metal material such as Ag, Au and / or Al to form the pixel electrode connection member 80 .

[0094] Fig.13 2 shows the steps of forming the first connecting member 70. Fig.13, a first connection member 70 may be formed on the pixel electrode connection member 80. The first connection member 70 may be formed of a conductive material, and may electrically connect the pixel electrode 191 and the drain electrode 156 together with the pixel electrode connection member 80. For example, the first connection member 70 may be implemented as a bump, an anisotropic conductive film (ACF), or the like.

[0095] According to Fig.14 and Fig.15 In the exemplary embodiment of the present invention shown in FIG. 1 , the first display panel 100 including the prepared transistor may be disposed on the first connector 70 so that the first display panel 100 faces the second display panel 200, and the first display panel 100 and the second display panel 200 may be combined. The first display panel 100 and the second display panel 200 may be connected by the first connector 70, and a gap may be formed between the first display panel 100 and the second display panel 200. For example, an impact absorbing insulating material may be disposed in a region between the first display panel 100 and the second display panel 200 and not occupied by the first connector 70.

[0096] According to an exemplary embodiment of the present invention, the first connector 70 may be disposed in the opening of the passivation layer 160 in which the drain electrode 156 is exposed, and the passivation layer 160 may be disposed directly on the second substrate 210. For example, the first connector 70, the passivation layer 160, and the second substrate 210 may be substantially coplanar.

[0097] exist Fig.14 In the embodiment, the second display panel 200 is disposed on the first connecting member 70, and the first display panel 100 is disposed below the first connecting member 70, serving as an upper panel and a lower panel, respectively. Fig.15 In the embodiment, the first display panel 100 may be disposed on the first connection member 70, and the second display panel 200 may be disposed below the first connection member 70 as an upper panel and a lower panel, respectively. Regardless of how the upper panel and the lower panel are designated with respect to the first connection member 70, the organic light emitting diode display may be implemented in the same manner as described previously.

[0098] Refer again Fig.14 and Fig.15 , the first connector 70 on the lower surface of the second substrate 210 may be disposed to face a portion where the drain electrode 156 of the first display panel 100 is exposed, and the pixel electrode 191 may be electrically connected to the drain electrode 156 through the pixel electrode connector 80 and the first connector 70. For example, the pixel electrode 191 may be electrically connected to the drain electrode 156 in the thickness direction.

[0099] When based on Fig.14As shown in the exemplary embodiment of the present invention, when the second display panel 200 is set upward and the first display panel 100 is set downward, an alignment problem in which the bonding position of the first display panel 100 is determined may occur due to the opaque second substrate 210. In this case, a long wavelength laser can be used to pass through the second substrate 210 and align the first display panel 100 at the correct position. When the long wavelength laser irradiates the top of the second display panel 200, the side surface of the first display panel 100 can be identified through the second substrate 210, so that a plurality of first display panels 100 can be set at the correct position.

[0100] according to Fig.14 and Fig.15 , a plurality of first display panels 100 may be combined into one second display panel 200, such as Figure 1 and Figure 2 as shown in .

[0101] Here, you can Figures 4 to 12 The second display panel 200 may be manufactured by the manufacturing method of the present invention, and the first display panel 100 may be manufactured by a transistor forming process.

[0102] According to Fig.19 and Fig. 20 In the exemplary embodiment of the present invention depicted in FIG, the first display panel 100 and the second display panel 200 may be combined such that the lower surface of the second substrate 210 and the first substrate 110 face each other. In this case, an opening may be formed in the first substrate 110 to electrically connect the pixel electrode 191 and the drain electrode 156.

[0103] Reference Figures 16 to 20 A method of manufacturing an organic light emitting diode display and a first display panel 100 including an opening is described.

[0104] first, Figures 16 to 18 is a cross-sectional view of a method of manufacturing the first display panel 100 .

[0105] Reference Fig.16 , the first substrate 110 may include a wafer doped with electrons or holes to form a source region 132 and a drain region 133. A channel region 131 is formed between the source region 132 and the drain region 133 (eg, in the first substrate 110).

[0106] A gate insulating layer 120 is formed on the channel region 131, the source region 132, and the drain region 133, and a gate electrode 121 is formed on the gate insulating layer 120. For example, the gate electrode 121 may be disposed between the source electrode 155 and the drain electrode 156, and the gate electrode 121 may overlap the channel region 131 in the thickness direction. An interlayer insulating layer 140 is formed on the gate electrode 121 and the gate insulating layer 120. Openings are formed in the gate insulating layer 120 and the interlayer insulating layer 140 so that the source electrode 155 and the drain electrode 156 are connected to the source region 132 and the drain region 133, respectively. The source electrode 155 and the drain electrode 156 may be formed to have at least a portion overlapping the upper surface of the interlayer insulating layer 140 and another portion penetrating the interlayer insulating layer 140 and the gate insulating layer 120. A passivation layer 160 is formed to cover the upper surfaces of the interlayer insulating layer 140, the source electrode 155, and the drain electrode 156. Here, the gate insulating layer 120 and the interlayer insulating layer 140 may be collectively referred to as an insulating layer.

[0107] Reference Fig.17 , a second opening 61 is formed to penetrate the first substrate 110 , the gate insulating layer 120 , and the interlayer insulating layer 140 . The second opening 61 is formed to expose a portion of the drain electrode 156 .

[0108] Reference Fig.18 A metal material of Ag, Au and / or Al is filled in the second opening 61 of the first substrate 110 to form the drain electrode connector 90 .

[0109] Fig.19 and Fig. 20 is a cross-sectional view of an organic light emitting diode display according to an exemplary embodiment of the present invention.

[0110] Reference Fig.19 The first connection member 70 is formed on the drain electrode connection member 90 of the prepared first display panel 100 . The second display panel 200 is disposed to face the first display panel 100 , and the first display panel 100 and the second display panel 200 are combined by the first connection member 70 .

[0111] The second display panel 200 may be disposed on the first connection member 70 , and the first display panel 100 may be disposed below the first connection member 70 , so that the second display panel 200 and the first display panel 100 are combined to serve as an upper panel and a lower panel, respectively.

[0112] Reference Fig. 20, the first display panel 100 may be disposed on the first connection member 70, and the second display panel 200 may be disposed below the first connection member 70 to combine the first display panel 100 and the second display panel 200 as an upper panel and a lower panel, respectively. Regardless of how the upper panel and the lower panel are designated with respect to the first connection member 70, the organic light emitting diode display is implemented in the same manner.

[0113] Reference Fig.19 and Fig. 20 In the organic light emitting diode display according to an exemplary embodiment of the present invention, the lower surface of the second substrate 210 is disposed so that the first substrate 110 of the first display panel 100 faces the lower surface of the second substrate 210. Therefore, the drain electrode 156 of the first display panel 100 can be electrically connected to the pixel electrode 191 through the drain electrode connector 90, the pixel electrode connector 80 and the first connector 70.

[0114] When the second display panel 200 is the upper panel and the first display panel 100 is the lower panel, an alignment problem of determining the bonding position of the first display panel 100 may occur due to the opaque second substrate 210. In this case, a long wavelength laser is used to pass through the second substrate 210 to align the first display panel 100 at the correct position. When the long wavelength laser irradiates the top of the second display panel 200, the side surface of the first display panel 100 can be recognized through the second substrate 210, so that a plurality of first display panels 100 can be set at the correct position.

[0115] For according to Fig.19 and Fig. 20 The second display panel 200 and the first display panel 100 are configured according to Figure 1 and Figure 2 , a plurality of first display panels 100 may be combined to one second display panel 200 .

[0116] According to an exemplary embodiment of the present invention, since the second display panel 200 and the first display panel 100, which are manufactured separately, can be connected by the first connection member 70, and the first display panel 100 and the second display panel 200 can be manufactured by different conditions, the transistor can be formed on the wafer substrate and coupled to the organic light emitting diode OLED to drive the organic light emitting diode OLED. That is, since the transistor is formed on a small wafer substrate, more pixels including the transistor can be formed in the same area, thereby providing a high-resolution display device.

[0117] In addition, since the number of the first display panels 100 attached to the second display panel 200 may vary, a large-area, high-resolution organic light emitting diode display may be provided according to the size of the second display panel 200 .

[0118] While exemplary embodiments of the present invention have been shown and described above, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present disclosure as defined by the following claims.

Claims

1. An organic light emitting diode display, comprising: A plurality of first display panels, each of the first display panels comprising a first substrate and a transistor disposed on the first substrate, the transistor comprising an input electrode and an output electrode; A second display panel includes a second substrate, a first electrode disposed on the second substrate, an emission layer disposed on the first electrode, and a second electrode disposed on the emission layer; as well as a plurality of first connecting members, which are correspondingly arranged on the output electrodes and located between the plurality of first display panels and the second display panel, The upper surfaces of the plurality of first display panels and the lower surface of the second display panel face each other and are separated from each other. The second display panel further includes a plurality of first openings formed in the second substrate and a plurality of pixel electrode connecting members correspondingly arranged in the plurality of first openings. wherein the output electrode of the transistor is electrically connected to the first electrode through a corresponding first connection member among the plurality of first connection members, and Wherein, the first electrode and the corresponding first connecting member are electrically connected through a corresponding pixel electrode connecting member among the plurality of pixel electrode connecting members.

2. The organic light emitting diode display according to claim 1, wherein: The first substrate is a wafer.

3. The organic light emitting diode display according to claim 1, wherein: The plurality of first display panels are connected to the second display panel through the plurality of first connectors.

4. The organic light emitting diode display according to claim 3, wherein: The output electrodes of the transistors formed in the plurality of first display panels are electrically connected to the first electrodes of the second display panel through the corresponding first connectors among the plurality of first connectors.

5. The organic light emitting diode display according to claim 1, wherein: The first display panel further includes: A channel region, a source region and a drain region are arranged in the first substrate; A gate insulating layer, disposed on the first substrate; a gate electrode disposed on the gate insulating layer; and An interlayer insulating layer is disposed on the gate electrode.

6. The organic light emitting diode display according to claim 5, wherein: The input electrode and the output electrode are a source electrode and a drain electrode, and Wherein, the input electrode and the output electrode are both at least partially disposed on the interlayer insulating layer and are respectively connected to the source region and the drain region.

7. The organic light emitting diode display according to claim 5, wherein: The first display panel further includes: an opening penetrating the first substrate, the gate insulating layer and the interlayer insulating layer; and a drain electrode connector, disposed in the opening, The output electrode and the first connection member are electrically connected through the drain electrode connection member.

8. The organic light emitting diode display according to claim 7, wherein: Two or more first connecting members are disposed between at least one first display panel among the plurality of first display panels and the second display panel, and Wherein, the at least one first display panel is overlapped with the second display panel and the two or more first connecting members.

9. A method for manufacturing an organic light emitting diode display, the method comprising: forming a first substrate on the auxiliary substrate; coating and patterning a photoresist on the first substrate to form a plurality of first openings in the first substrate; forming a first electrode on the first substrate to overlap with the plurality of first openings; sequentially forming an emission layer and a second electrode on the first electrode; separating the auxiliary substrate from the first substrate to form a light emitting diode display panel, wherein the light emitting diode display panel includes the first substrate, the first electrode, the emission layer and the second electrode; forming a plurality of pixel electrode connecting members in the plurality of first openings; forming a plurality of first connecting members on the plurality of pixel electrode connecting members; and A plurality of transistor display panels are arranged to face the light emitting diode display panel, and the plurality of first connecting members are arranged between the plurality of transistor display panels and the light emitting diode display panel, Wherein, the plurality of transistor display panels include transistors having output electrodes, Wherein, the output electrode overlaps with the plurality of first connecting members, and Wherein, the light emitting diode display panel and the plurality of transistor display panels are connected via the plurality of first connecting members.

10. The method according to claim 9, wherein: The output electrode of the transistor is electrically connected to the first electrode through the plurality of first connections.

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