Process chamber for silicon wafer, silicon wafer processing equipment and silicon wafer processing method

Abstract

The present invention provides a process chamber for silicon wafers, a silicon wafer processing device, and a silicon wafer processing method. The process chamber includes: a housing with a chamber inside; a vacuum valve; a carrier plate that enters and exits the chamber through the vacuum valve and is used to carry silicon wafers; a transfer component for transferring the carrier plate; and a plurality of lifting devices are respectively provided on both sides of the chamber in the direction of the carrier plate entering and exiting. Through the technical solution of the present invention, the lifting devices are arranged on both sides of the chamber, and a transfer component is provided, which facilitates the reciprocating transfer of the carrier plate in the process chamber, reduces the transfer time and turnover time of the carrier plate, is beneficial to shortening the non-process time, also reduces the contact between the carrier plate and the atmosphere, improves the temperature stability of the carrier plate and the cleanliness of the carrier plate, and is beneficial to improving production efficiency and product quality.

Description

Technical Field

[0001] The present invention relates to the technical field of solar cell production, and in particular to a process chamber for a silicon wafer, a silicon wafer processing device and a silicon wafer processing method. Background Art

[0002] In the process of preparing thin films in batches on silicon wafers for solar cells, multiple silicon wafers need to be placed on a carrier, and then the carrier enters the process equipment to complete the deposition of the silicon wafer thin film.

[0003] At present, after the carrier completes the silicon wafer loading in the atmospheric environment, it enters the equipment to complete the silicon wafer deposition process, and then goes out to the external atmosphere to unload the silicon wafer. The carrier must go through a cycle from low temperature to high temperature and then to low temperature. This large amount of heat dissipation and cooling down will cause a huge waste of energy when it re-enters the cavity for heating, and it is difficult to ensure that each carrier is cooled consistently when it comes out to the atmospheric environment. In this way, it is difficult to ensure the temperature consistency of each carrier, which is very unfavorable for the stability of the process. Reheating the carrier also prolongs the non-process time and reduces production efficiency. In addition, the carrier repeatedly enters and exits the atmospheric environment outside the equipment, and dust particles, water vapor, etc. will float onto the carrier, causing pollution to the silicon wafer and interference with subsequent processes, which is not conducive to product quality and performance. In addition, in some process chambers, the lifting mechanism of the carrier is set in the center of the cavity. This structure is not convenient for setting up space for the transmission of the lower carrier, which reduces production efficiency. Summary of the invention

[0004] The present invention aims to improve at least one of the technical problems existing in the prior art or related art.

[0005] In view of this, an object of the present invention is to provide a process chamber for a silicon wafer.

[0006] Another object of the present invention is to provide a silicon wafer processing equipment.

[0007] Another object of the present invention is to provide a silicon wafer processing method.

[0008] In order to achieve the above-mentioned purpose, the technical solution of the first aspect of the present invention provides a process chamber for a silicon wafer, comprising: a shell, a chamber is arranged in the shell; a vacuum gate valve, vacuum gate valves are respectively arranged on both sides of the shell, and the vacuum gate valve is used to seal the chamber; a carrier, which enters and exits the chamber through the vacuum gate valve, and the carrier is used to carry the silicon wafer; a transmission component is arranged in the chamber, and the transmission component is used to transmit the carrier; a heating plate, the heating plate is used to carry the carrier with the silicon wafer and heat the carrier; a lifting device is connected to the heating plate and is used to lift the heating plate; wherein, in the direction of the carrier entering and exiting, a plurality of lifting devices are respectively arranged on both sides of the chamber.

[0009] In this technical solution, vacuum gate valves are respectively arranged on both sides of the housing, which is convenient for sealing the process chamber. Furthermore, the process chamber can be evacuated, reducing the thermal convection in the chamber, thereby facilitating the maintenance of the temperature stability of the carrier plate and the silicon wafer, and also facilitating the maintenance of the cleanliness in the chamber, thus reducing the contamination of the silicon wafer and improving the process treatment effect. The setting of the transfer assembly enables the automatic transfer of the carrier plate in the process chamber. The lifting devices are arranged on both sides, which is conducive to arranging multiple layers or rows of transfer assemblies, improving the transfer and turnover efficiency of the carrier plate in a limited space, reducing the non-process time, and improving the product production efficiency. Moreover, the carrier plate can be transferred through the gap between the lifting devices on both sides.

[0010] The carrier plate can enter and exit the chamber through the vacuum gate valve, enabling the carrier plate to move to other process chambers through the transfer assembly, so that the silicon wafer can enter different process chambers for processing. There is no need to replace the carrier plate during the intermediate process, which is conducive to maintaining the temperature stability of the silicon wafer. The setting of the heating plate facilitates maintaining a stable temperature of the carrier plate through heating, thereby improving the temperature stability and consistency of the silicon wafer. The lifting device lifts the heating plate, and since the heating plate bears the carrier plate with the silicon wafer, the carrier plate can be lifted and lowered together with the heating plate, facilitating the continuous heating of the carrier plate and ensuring the temperature stability of the carrier plate and the silicon wafer. Lifting devices are provided on both sides of the chamber, and the carrier plate can smoothly pass through the gap between the lifting devices on both sides to achieve the purpose of transferring the carrier plate between the process chamber and other process chambers. Moreover, the lifting devices are arranged on both sides of the chamber, which is conducive to arranging multiple layers or rows of transfer assemblies, facilitating the separate transfer of the fully loaded carrier plate and the empty carrier plate, thereby improving the production efficiency and reducing the non-process time. The setting of multiple lifting devices is conducive to improving the balance when lifting and lowering the heating plate and reducing accidents such as the silicon wafer falling due to the skew of the carrier plate.

[0011] In the above technical solution, the transfer assembly includes: a first transfer device for transferring the carrier plate; a second transfer device for transferring the carrier plate, the second transfer device is arranged at the bottom of the first transfer device, and the transfer directions of the first transfer device and the second transfer device are opposite.

[0012] In the above technical solution, a part of the lifting device extends out of the housing; the process chamber further includes: a servo motor arranged outside the housing and connected to the lifting device, the servo motor is used to drive the lifting device; a transmission connecting rod and a steering gear connected to each other, each lifting device is connected to the servo motor through the transmission connecting rod and the steering gear; or a synchronous belt and a steering gear connected to each other, each lifting device is connected to the servo motor through the synchronous belt and the steering gear.

[0013] In the above technical solution, the lifting device includes a lifting column; a bellows arranged in the chamber, and a part of the lifting column is arranged inside the bellows, the bellows is used to seal the lifting column; the other part of the lifting column extends out of the housing and is connected to the servo motor, and the servo motor is used to drive the lifting column to lift and lower.

[0014] In the above technical solution, the jacking device includes a cam and a dynamic seal. The cam is connected to a servo motor, and the dynamic seal is used to seal the cam.

[0015] In any of the above technical solutions, the process chamber of the silicon wafer further includes: a heating plate support block and a heat insulation spacer block, which are arranged between the jacking device and the heating plate, and the heat insulation spacer block is arranged between the heating plate support block and the heating plate. The heating plate support block is used to support the heating plate, and the heat insulation spacer block is used for heat insulation.

[0016] In any of the above technical solutions, the transfer assembly includes a plurality of rollers or a belt conveyor mechanism; or the transfer assembly includes a manipulator, a first support device, and a second support device. Both the first support device and the second support device are used to support the carrier plate, and the manipulator is used to move the carrier plate.

[0017] In any of the above technical solutions, the process chamber of the silicon wafer further includes: an electrode unit, which is arranged at the top of the chamber, and the electrode unit is used to process the silicon wafer.

[0018] The technical solution of the second aspect of the present invention provides a silicon wafer processing device, including: a loading and unloading chamber for providing a loading and unloading space for the silicon wafer; the process chamber of the silicon wafer according to any of the technical solutions in the first aspect above, at least one end of the process chamber is connected to the loading and unloading chamber; a material transporting device that can enter and exit the loading and unloading chamber, and the material transporting device is used to transport the silicon wafer; a loading and unloading device arranged in the loading and unloading chamber, and the loading and unloading device is used to load and unload the silicon wafer between the material transporting device and the carrier plate of the process chamber; a third transfer device arranged in the loading and unloading chamber, and the third transfer device is used to transfer the carrier plate with the first transfer device of the process chamber; a fourth transfer device arranged in the loading and unloading chamber, and the fourth transfer device is used to transfer the carrier plate with the second transfer device of the process chamber; a carrier plate transposition device for transferring the carrier plate between the third transfer device and the fourth transfer device, or for transferring the carrier plate between the first transfer device and the second transfer device.

[0019] In this technical solution, by adopting the process chamber of the silicon wafer according to any of the above technical solutions, all the beneficial effects of the above technical solutions are thus achieved, which will not be elaborated here; through the arrangement of the material transporting device and the loading and unloading device, it is convenient to transport the silicon wafer into the loading and unloading chamber for loading and unloading, so that the carrier plate does not need to be transferred outside the silicon wafer processing device, reducing the contact with the outside atmosphere, which is thus beneficial to improving the temperature stability and cleanliness of the carrier plate and the silicon wafer on the carrier plate; by setting the third transfer device, the fourth transfer device, and the carrier plate transposition device, it is convenient to realize the cyclic transfer of the carrier plate in the silicon wafer processing device, which is beneficial to improving the transfer efficiency of the carrier plate and saving non-process time.

[0020] Specifically, the material transporting device can enter and exit the loading and unloading cavity, allowing the carrier plate to remain in the loading and unloading cavity, avoiding contact with the external atmosphere. That is, the carrier plate no longer needs to load and unload wafers in the atmospheric environment, but instead does so in the loading and unloading cavity. Therefore, the situation where the temperature of the carrier plate drops significantly when it enters the atmospheric environment is reduced, which is beneficial for the carrier plate to maintain its original temperature, thereby reducing the demand for heating, saving energy, and reducing waste. Moreover, since the carrier plate can maintain its original temperature or only experience a small amount of temperature drop, the heating duration can also be reduced, which is beneficial for shortening the non-process time and thus improving production efficiency. The ability of the carrier plate to maintain its original temperature or only have a small temperature drop is also conducive to multiple carrier plates maintaining a relatively consistent temperature, which is beneficial for improving the temperature uniformity of the wafers on the carrier plate and the stability of the wafer processing quality. Additionally, since the carrier plate does not need to go to the atmospheric environment for wafer loading and unloading, the dust particles, water vapor, and other impurities attached to the carrier plate can be reduced, thereby reducing the contamination of the wafers and being more conducive to improving the product quality and performance.

[0021] The technical solution of the third aspect of the present invention provides a wafer processing method for the wafer processing equipment in the second aspect above, including: obtaining a wafer processing instruction; controlling the first material transporting device to transport the wafers into the first loading and unloading cavity according to the wafer processing instruction; controlling the loading and unloading device in the first loading and unloading cavity to transfer the wafers on the first material transporting device to the carrier plate located on the third transporting device; controlling the third transporting device to transfer the carrier plate to the first transporting device in the process cavity to perform the process treatment of the wafers; after the process treatment is completed, controlling the first transporting device to transfer the carrier plate to the third transporting device in the second loading and unloading cavity; controlling the loading and unloading device in the second loading and unloading cavity to transfer the wafers on the carrier plate to the second material transporting device; controlling the second material transporting device to transport the wafers out of the second loading and unloading cavity, and controlling the carrier plate replacement device in the second loading and unloading cavity to move to transport the empty carrier plate from the third transporting device to the fourth transporting device in the second loading and unloading cavity; controlling the fourth transporting device in the second loading and unloading cavity to reversely transfer the carrier plate from the second loading and unloading cavity, through the second transporting device in the process cavity, to the fourth transporting device in the first loading and unloading cavity; controlling the carrier plate replacement device in the first loading and unloading cavity to transfer the carrier plate from the fourth transporting device to the third transporting device.

[0022] In the above technical solution, by loading and unloading silicon wafers in the loading and unloading cavity, the carrier plate does not need to be transferred outside the silicon wafer processing equipment, reducing the contact with the outside atmosphere, which is beneficial to improving the temperature stability and cleanliness of the carrier plate and the silicon wafers on the carrier plate; by loading and unloading silicon wafers on the carrier plate at both ends of the process cavity respectively, and circulating the carrier plate through the first transfer device, the second transfer device, the third transfer device, the fourth transfer device and the carrier plate transposition device inside the silicon wafer processing equipment, on the one hand, it can ensure the circulation and transfer of the carrier plate inside the silicon wafer processing equipment, and is also beneficial to improving the transfer efficiency of the carrier plate and saving non-process time.

[0023] The additional aspects and advantages of the present invention will become apparent in the following description section or be learned through the practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 is a longitudinal sectional structural schematic diagram of a process cavity and a carrier plate outside the process cavity according to an embodiment of the present invention;

[0025] Figure 2 is a longitudinal sectional structural schematic diagram of a process cavity according to an embodiment of the present invention;

[0026] Figure 3 is a transverse sectional structural schematic diagram of a process cavity according to an embodiment of the present invention;

[0027] Figure 4 is Figure 3 a partial enlarged structural schematic diagram of part A in

[0028] Figure 5 is a transverse sectional structural schematic diagram of a process cavity according to an embodiment of the present invention;

[0029] Figure 6 is Figure 5 a partial enlarged structural schematic diagram of part B in

[0030] Figure 7 is a partial three-dimensional structural schematic diagram of a process cavity according to an embodiment of the present invention;

[0031] Figure 8 is a transverse sectional structural schematic diagram of a process cavity according to an embodiment of the present invention;

[0032] Figure 9 is Figure 8 a partial enlarged structural schematic diagram of part C in

[0033] Figure 10 is a transverse sectional structural schematic diagram of a process cavity according to an embodiment of the present invention;

[0034] Figure 11 isFigure 10 Schematic diagram of the partial enlarged structure of the D part;

[0035] Figure 12 Schematic diagram of the partial three-dimensional structure of the process chamber of an embodiment of the present invention;

[0036] Figure 13 Schematic diagram of the longitudinal sectional structure of the silicon wafer processing equipment of an embodiment of the present invention;

[0037] Figure 14 Schematic diagram of the partial sectional structure of the loading and unloading chamber of the silicon wafer processing equipment of an embodiment of the present invention;

[0038] Figure 15 Schematic diagram of the process flow of the silicon wafer processing method of an embodiment of the present invention.

[0039] Among them, Figures 1 to 14 The corresponding relationship between the reference numerals and the component names in

[0040] 10 Process chamber, 110 Housing, 120 Vacuum valve, 130 Carrier plate, 140 First transmission device, 150 Second transmission device, 160 Heating plate, 170 Lifting column, 172 Bellows, 174 Servo motor, 176 Transmission link, 178 Steering gear, 180 Cam, 182 Dynamic seal, 184 Heating plate support block, 186 Heat insulation pad, 188 Electrode unit, 20 First loading and unloading chamber, 200 First hanger, 201 Second hanger, 202 Silicon wafer lifting mechanism, 204 Carrier plate lifting mechanism, 206 Third transmission device, 208 Fourth transmission device, 22 Second loading and unloading chamber, 30 Silicon wafer. Detailed implementation manners

[0041] In order to more clearly understand the above objects, features and advantages of the present invention, the present invention will be further described in detail below with reference to the accompanying drawings and specific implementation manners. It should be noted that, without conflict, the embodiments of the present application and the features in the embodiments can be combined with each other.

[0042] In the following description, many specific details are set forth in order to fully understand the present invention. However, the present invention can also be implemented in other ways different from those described herein. Therefore, the protection scope of the present invention is not limited by the specific embodiments disclosed below.

[0043] Next, refer to Figures 1 to 15 Describe some embodiments of the present invention.

[0044] In recent years, solar cell technology has developed rapidly, especially the prospects of thin-film silicon / crystalline silicon heterojunction cells (HIT, Heterojunction with intrinsic Thinlayer, silicon solar cells using HIT structure) have been valued by major manufacturers and industry experts. This is because this technology combines the first-generation single-crystalline silicon technology and the second-generation thin-film silicon cell technology, which greatly improves the cell conversion efficiency. In addition, this technology also has many characteristics such as double-sided structure, low temperature coefficient (effective output at high temperatures), fewer steps in the entire process, low-temperature process, high stability, etc. It will become the main development direction of solar cell technology in the future.

[0045] To complete the batch thin film preparation of silicon wafers, multiple silicon wafers need to be placed on a carrier, and then the carrier enters the process equipment (PECVD, Plasma Enhanced Chemical Vapor Deposition) to complete the deposition of silicon wafer thin films; HIT technology is different from the intrinsic layer (I layer) and doping layer (P layer or N layer) prepared by amorphous silicon cells, the film thickness is greater than 200nm, and the film thickness of the amorphous silicon passivation layer (I layer) and doping layer (P layer or N layer) of heterojunction silicon-based solar energy are relatively thin, about 5nm to 10nm. This makes the time for depositing thin films very short. How to increase the proportion of process deposition time in the cycle time is the key to releasing equipment production capacity, and how to reduce non-process time is the key to increasing production capacity, fully utilizing equipment capabilities and reducing costs. Among them, how to reduce the heating time of the carrier is particularly important for improving production capacity.

[0046] At present, the mainstream HIT PECVD substrate has to go through a cycle from low temperature to high temperature and then to low temperature after loading the silicon wafer in the atmospheric environment, and then enter the equipment to complete the silicon wafer deposition process and then exit to the external atmosphere for silicon wafer unloading. The substrate has to dissipate a lot of heat and cool down before re-entering the chamber for heating, which causes a huge waste of energy consumption. It is also difficult to ensure that the temperature of each substrate is consistent when it comes out of the atmospheric environment. In this way, it is difficult to ensure the temperature consistency of each substrate, which is very unfavorable to the stability of the process. How to ensure that the temperature of the substrate is maintained during the cyclic use process (less cooling) is also particularly important for process stability and energy consumption reduction.

[0047] HIT technology is different from traditional crystalline silicon cells that use diffusion methods to prepare PN junctions. Instead, it prepares PN junctions on the surface of silicon wafers. Therefore, it has extremely high requirements for the state of the silicon wafer surface. Therefore, the protection of the silicon wafer surface during the entire process from the completion of the texturing process to the PECVD process is extremely critical to the quality of the final product. One of the important links is the contamination of the silicon wafer surface by the carrier. How to keep the carrier clean during the recycling process is very important.

[0048] In traditional HIT PECVD, the carrier plate with wafers is usually introduced into the equipment from the atmospheric environment through the wafer loading chamber. Then, through the isolation between the atmosphere and vacuum in the wafer loading chamber, the carrier plate enters the vacuum environment. After preheating, it enters one or more process chambers for the preparation of corresponding film layers. The carrier plate carrying the completed film layer preparation re-enters the atmospheric environment through the wafer unloading chamber for wafer unloading. The empty carrier plate after wafer unloading can return to the wafer loading area through the return transfer channel under the equipment or the return transfer channel on the side of the equipment for the recycling of the carrier plate. When the carrier plate enters the atmospheric environment, it is affected by air convection heat dissipation. In addition, the path of the carrier plate return transfer channel is relatively long, and after the carrier plate enters the atmospheric environment, it often needs to wait at multiple stations before returning to the equipment again, resulting in a too long cycle time. Therefore, the temperature of the carrier plate drops significantly. Usually, it drops from about 180°C when leaving the equipment to about 50°C after cycling in the atmospheric environment. When the carrier plate carries wafers and needs to be reheated quickly before the next process, it causes waste of energy consumption. After the carrier plate re-enters the atmospheric environment from the vacuum environment, dust particles will float onto the carrier plate, and the carrier plate will re-adsorb gases and water vapor in the atmospheric environment, causing pollution to the wafers and interference to subsequent processes, which is not conducive to the improvement and stability of product quality and performance.

[0049] In order to solve the above problems existing in the preparation of HIT cells in the PECVD section, the present invention provides a process chamber of a PECVD device. With the PECVD device adopting this process chamber, the carrier plate can be continuously recycled in the vacuum chamber.

[0050] As Figures 1 to 12 shown, the process chamber 10 of the wafer according to an embodiment proposed in the first aspect of the present invention includes a housing 110, a vacuum valve 120, a carrier plate 130, a transfer assembly, a heating plate 160, and a lifting device.

[0051] Specifically, a chamber is provided inside the housing 110. As Figure 2 shown, vacuum valves 120 are respectively provided on both sides of the housing 110. The vacuum valves 120 are used to seal the chamber. The carrier plate 130 enters and exits the chamber through the vacuum valves 120, and the carrier plate 130 is used to carry wafers. The transfer assembly is provided inside the chamber and is used to transfer the carrier plate 130. As Figure 2 , Figure 3 and Figure 4 shown, the heating plate 160 is also provided inside the chamber. The heating plate 160 is used to carry the carrier plate 130 with wafers and heat the carrier plate 130 with wafers. The lifting device is connected to the heating plate 160 and is used to lift the heating plate 160. Among them, on both sides of the chamber in the direction of the entry and exit of the carrier plate 130, a plurality of lifting devices are respectively provided.

[0052] In this embodiment, vacuum gate valves 120 are respectively arranged on both sides of the housing 110, which is convenient for sealing the process chamber 10. Then, the process chamber 10 can be evacuated, reducing the heat convection in the chamber. Thus, it is convenient to maintain the temperature stability of the carrier plate 130 and the silicon wafer, and it is also convenient to maintain the cleanliness of the chamber, thereby reducing the contamination of the silicon wafer and improving the process treatment effect. The setting of the transfer component enables the carrier plate 130 to automatically rotate in the process chamber. The lifting devices are arranged on both sides, which is beneficial to arranging multiple layers or rows of transfer components, improving the transfer and turnover efficiency of the carrier plate 130 in a limited space, reducing the non-process time, and improving the product production efficiency. Moreover, the carrier plate 130 can be transferred through the gap between the lifting devices on both sides, avoiding interference with the lifting devices.

[0053] The carrier plate 130 can enter and exit the chamber through the vacuum gate valve 120, enabling the carrier plate 130 to move to other process chambers through the transfer component. Thus, the silicon wafer can enter different process chambers 10 for processing, and there is no need to replace the carrier plate 130 during the intermediate process, which is beneficial to maintaining the temperature stability of the silicon wafer. The setting of the heating plate 160 is convenient for keeping the carrier plate 130 at a stable temperature by heating, thereby improving the temperature stability and consistency of the silicon wafer. The lifting device lifts the heating plate 160. Since the heating plate 160 bears the carrier plate 130 with the silicon wafer, the carrier plate 130 can be lifted and lowered together with the heating plate 160, facilitating the continuous heating of the carrier plate 130 and ensuring the temperature stability of the carrier plate 130 and the silicon wafer. Lifting devices are respectively arranged on both sides of the chamber. The carrier plate 130 can smoothly pass through the gap between the lifting devices on both sides to achieve the purpose of transferring the carrier plate 130 between the process chamber 10 and other process chambers. Moreover, the lifting devices are arranged on both sides of the chamber, which is beneficial to arranging multiple layers or rows of transfer components, facilitating the separate rotation of the fully loaded carrier plate and the empty carrier plate, thereby improving the production efficiency and reducing the non-process time. The setting of multiple lifting devices is beneficial to improving the balance when lifting the heating plate 160 and reducing accidents such as the silicon wafer falling due to the skew of the carrier plate 130.

[0054] It can be understood that the entry and exit direction of the carrier plate 130 refers to the direction indicated by the connection line between the two vacuum gate valves 120, that is, the direction from one vacuum gate valve 120 to the other vacuum gate valve 120. In the entry and exit direction of the carrier plate 130, multiple lifting devices are respectively arranged on both sides of the chamber. That is to say, in the transverse direction of the entry and exit direction of the carrier plate 130, multiple lifting devices are respectively arranged on both sides of the chamber. It can also be understood that the chamber has a front side and a rear side, and a vacuum gate valve 120 is provided on each of the front side and the rear side. The entry and exit direction of the carrier plate 130 is also the front-rear direction of the chamber. Relative to the front side and the rear side, the chamber also has a left side and a right side. In the entry and exit direction of the carrier plate 130, multiple lifting devices are respectively arranged on both sides of the chamber. It can thus be understood that multiple lifting devices are arranged on the left side of the chamber, and multiple lifting devices are also arranged on the right side of the chamber.

[0055] In the above embodiments, in the transverse direction of the loading board 130's entry and exit direction, the distance between the lifting devices located on both sides of the chamber is greater than the width of the loading board 130 in the transverse direction of the entry and exit direction. That is to say, in the transverse direction of the loading board 130's entry and exit direction, the distance between the lifting device on one side and the lifting device on the other side is greater than the width of the loading board 130 in the transverse direction of the entry and exit direction, so as to facilitate the transmission of the loading board 130 and avoid interference.

[0056] Furthermore, in the above embodiments, the transmission assembly includes: a first transmission device 140 for transmitting the loading board 130; a second transmission device 150 for transmitting the loading board 130. The second transmission device 150 is disposed at the bottom of the first transmission device 140, and the transmission directions of the first transmission device 140 and the second transmission device 150 are opposite. This facilitates the separate transportation of the loading board 130 with the silicon wafer 30 and the empty loading board 130. The first transmission device 140 can be used to transmit the loading board 130 with the silicon wafer 30, and the second transmission device 150 is used to transmit the empty loading board 130. Of course, it is also possible to separately transport the loading board 130 with the silicon wafer 30 to be processed and the loading board 130 with the processed silicon wafer 30. For example, the first transmission device 140 is used to transmit the loading board 130 with the silicon wafer 30 to be processed, while the second transmission device 150 is used to transmit the loading board 130 with the processed silicon wafer 30.

[0057] As Figure 3 and Figure 5 shown, in the above embodiments, the process chamber 10 of the silicon wafer further includes: a servo motor 174 disposed outside the housing 110 and connected to the lifting device. The servo motor 174 is used to drive the lifting device.

[0058] In this embodiment, using the servo motor 174 to drive the lifting device is beneficial to improving the automation level of the equipment.

[0059] As Figure 3 shown, in the above embodiments, the process chamber 10 of the silicon wafer further includes: a transmission link 176 and a steering gear 178 that are connected to each other. Each lifting device is connected to the servo motor 174 through the transmission link 176 and the steering gear 178. In this way, the number of servo motors 174 can be reduced, and one servo motor 174 can be used to drive multiple lifting devices. It can also ensure the synchronous lifting and lowering of multiple lifting devices, which is beneficial to ensuring the balance of the loading board 130 and avoiding the silicon wafer from falling due to skewing during the lifting process.

[0060] Specifically, a transmission link 176 is connected to each lifting device. A transmission link 176 is provided on the servo motor 174. The transmission link 176 connected to the lifting device and the transmission link 176 on the servo motor 174 are connected through a steering gear 178. This enables the torque of the servo motor 174 to be steered by the steering gear 178 and then transmitted to the lifting device through the transmission link 176, causing the lifting device to act and driving the heating plate 160 to drive the carrier plate 130 to move up and down.

[0061] In some other embodiments, a synchronous belt is connected to each lifting device, and a synchronous belt is also provided on the servo motor 174. The synchronous belt connected to the lifting device and the synchronous belt on the servo motor 174 are connected through a steering gear 178. This can similarly ensure the synchronous lifting and lowering of multiple lifting devices.

[0062] As Figure 3 and Figure 4 shown, in any of the above embodiments, the lifting device includes a lifting column 170; a bellows 172 disposed in the chamber, and a part of the lifting column 170 is disposed inside the bellows 172. The bellows 172 is used to seal the lifting column 170; another part of the lifting column 170 extends out of the housing 110 and is connected to the servo motor 174, and the servo motor 174 is used to drive the lifting column 170 to move up and down.

[0063] In this embodiment, by providing the bellows 172 and the lifting column 170, the lifting column 170 moves up and down within the bellows 172 during the lifting process, which helps to reduce the fine particles generated due to frictional wear during the lifting and lowering of the lifting column 170 from falling into the chamber, thereby reducing the contamination of the silicon wafers, improving the product quality and performance. Moreover, the lifting column 170 moves in a straight line to push the heating plate 160 and the carrier plate 130 to move up and down. In this way, the movement direction of the lifting column 170 is consistent with the lifting direction of the heating plate 160, facilitating the reduction of the lateral force on the lifting column 170, improving the smoothness and balance during the lifting of the carrier plate 130, and reducing the vibration of the silicon wafers; a part of the lifting column 170 extends out of the housing 110 and is connected to the servo motor 174, that is, the servo motor 174 is disposed outside the housing 110, which helps to reduce the volume of the housing 110 and thus the occupied space, and can also reduce the volume of the chamber inside the housing 110, reducing the workload of evacuating the chamber, and is also beneficial to maintaining the temperature stability of the carrier plate 130 and the silicon wafers.

[0064] Figure 3 and Figure 4 show the descending state of the lifting column 170, at this time the bellows 172 is compressed; Figure 5 and Figure 6 show the ascending state of the lifting column 170, at this time the bellows 172 expands.

[0065] As Figures 8 to 12As shown, in any of the above embodiments, the jacking device includes a cam 180 and a dynamic seal 182. The cam 180 is connected to the servo motor 174, and the dynamic seal 182 is used to seal the cam 180. Such a structure of the jacking device occupies a small space, which is beneficial to reducing the chamber volume, reducing the difficulty of vacuum pumping, and maintaining the vacuum state in the chamber.

[0066] Figure 8 and Figure 9 shows the state where the rotation of the cam 180 raises the heating plate 160; Figure 10 and Figure 11 shows the state where the rotation of the cam 180 lowers the heating plate 160.

[0067] As Figure 4 、 Figure 7 、 Figure 12 shown, in any of the above embodiments, the process chamber 10 of the silicon wafer further includes: a heating plate support block 184 and a heat insulation cushion block 186, which are arranged between the jacking device and the heating plate 160, and the heat insulation cushion block 186 is arranged between the heating plate support block 184 and the heat insulation cushion block 186. The heating plate support block 184 is used to support the heating plate 160, and the heat insulation cushion block 186 is used for heat insulation.

[0068] In this embodiment, by setting the heating plate support block 184, it is convenient to increase the contact area between the jacking device and the heating plate 160, thereby improving the stability of supporting the heating plate 160 and the carrier plate 130; by setting the heat insulation cushion block 186, it is beneficial to reduce the heat transfer between the jacking device and the heating plate 160, which can not only improve the temperature uniformity on the heating plate 160, thereby improving the temperature uniformity of the carrier plate 130, but also reduce heat loss, reduce energy waste, and achieve energy conservation and consumption reduction.

[0069] As Figure 1 and Figure 2 shown, in any of the above embodiments, the transmission assembly includes a plurality of rollers. The plurality of rollers are divided into upper and lower layers. The plurality of rollers in the upper layer construct the first transmission device 140, and the plurality of rollers in the lower layer construct the second transmission device 150; the plurality of rollers in each layer are symmetrically arranged in the chamber with the connection line between one vacuum valve 120 and another vacuum valve 120 as the axis of symmetry, and are fixedly connected to the wall of the chamber through a fixing device. And at least the rollers in the upper layer have a contraction function. The rollers can not only realize the function of transporting the carrier plate 130, but also support the carrier plate 130, and have a strong bearing capacity, which is convenient for supporting a larger carrier plate 130. It can also reduce the number of components, simplify the structure in the chamber, and in the way of roller transmission, the rollers rotate in place by themselves without requiring additional moving space, which is also beneficial to reducing the space occupied by the housing 110; in addition, the rollers can be driven individually or synchronously rolled through a transmission member, and the driving method is flexible and easy to maintain.

[0070] In some other embodiments, the transmission component includes a belt conveyor mechanism, and both the first transmission device 140 and the second transmission device 150 of the transmission component are belt conveyor mechanisms, which can also transmit the carrier plate 130 and support the carrier plate 130, and no additional moving space is required.

[0071] In still some other embodiments, both the first transmission device 140 and the second transmission device 150 are manipulators, so that the carrier plate 130 can be directly grasped. Further, the manipulator can also replace the lifting device to a certain extent and also play a role in reducing components. It can be understood that when a manipulator is adopted, the transmission component further includes: a first support device and a second support device. The first support device is used to support the carrier plate 130 with wafers, and the second support device is used to support the empty carrier plate 130, and the second support device is arranged at the bottom of the first support device, so that the carrier plate 130 can be temporarily supported by the first support device and the second support device to facilitate the manipulator to switch the carrier plate 130.

[0072] As Figure 2 shown, in any of the above embodiments, the process chamber 10 of the wafer further includes an electrode unit 188, which is arranged at the top of the chamber, and the electrode unit 188 is used for processing the wafer.

[0073] As Figure 13As shown in the figure, an embodiment of the second aspect of the present invention provides a silicon wafer processing device, including: a first loading and unloading cavity 20 and a second loading and unloading cavity 22, both of which are used to provide a loading and unloading space for silicon wafers; the process cavities 10 of the silicon wafers in any one of the above-mentioned first aspect embodiments, there are multiple process cavities 10. Among the multiple process cavities 10, the process cavity 10 located at the starting end of the process route is connected to the first loading and unloading cavity 20, and the process cavity 10 located at the end of the process route is connected to the second loading and unloading cavity 22; a material transporting device, including a first hanger 200 and a second hanger 201, the first hanger can enter and exit the first loading and unloading cavity 20, the second hanger 201 can enter and exit the second loading and unloading cavity 22, and the material transporting device is used to transport the silicon wafers 30; a loading and unloading device, such as a silicon wafer lifting mechanism 202, a silicon wafer lifting mechanism 202 is provided in both the first loading and unloading cavity 20 and the second loading and unloading cavity 22, and the silicon wafer lifting mechanism 202 is used to load and unload the silicon wafers 30 between the material transporting device and the carrier plate of the process cavity 10; a third transmission device 206, a third transmission device 206 is provided in both the first loading and unloading cavity 20 and the second loading and unloading cavity 22, and the third transmission device 206 is used to transmit the carrier plate 130 with the first transmission device 140 of the process cavity 10; a fourth transmission device 208, a fourth transmission device 208 is provided in both the first loading and unloading cavity 20 and the second loading and unloading cavity 22, and the fourth transmission device 208 is used to transmit the carrier plate 130 with the second transmission device 150 of the process cavity 10. Correspondingly, the fourth transmission device 208 is arranged at the bottom of the third transmission device 206; a carrier plate transposition device, such as a carrier plate lifting mechanism 204, a carrier plate lifting mechanism 204 is provided in both the first loading and unloading cavity 20 and the second loading and unloading cavity 22, and the carrier plate lifting mechanism 204 is used to transmit the carrier plate between the third transmission device 206 and the fourth transmission device 208.

[0074] In this embodiment, by adopting the process cavity 10 of the silicon wafer 30 in any one of the above technical solutions, all the beneficial effects of the above technical solutions are thus achieved, which will not be elaborated here; through the setting of the material transporting device and the loading and unloading device, it is convenient to transport the silicon wafer 30 to the first loading and unloading cavity 20 or the second loading and unloading cavity 22 for loading and unloading, so that the carrier plate does not need to be transferred outside the silicon wafer processing device, but is recycled in the vacuum environment of the silicon wafer processing device, reducing the contact with the outside atmosphere, thereby being beneficial to improving the temperature stability and cleanliness of the carrier plate and the silicon wafer 30 on the carrier plate; by setting the third transmission device 206, the fourth transmission device 208 and the carrier plate transposition device, it is convenient to realize the cyclic transfer of the carrier plate in the vacuum environment inside the silicon wafer processing device, which is beneficial to improving the transfer efficiency of the carrier plate and saving non-process time.

[0075] It can be understood that the material conveying device is not limited to the first hanger 200 and the second hanger 201, and can also be any one of a suction cup and a manipulator; similarly, the loading and unloading device is not limited to the wafer lifting mechanism 202, and can also be a manipulator, a suction cup, etc.; the carrier plate transposition device can also be a manipulator, a suction cup or other transportation mechanisms.

[0076] Specifically, the first hanger 200 can enter and exit the first loading and unloading cavity 20, and the second hanger 201 can enter and exit the second loading and unloading cavity 22, so that the carrier plate 130 can stay in the wafer processing equipment and avoid contact with the external atmosphere. That is, the carrier plate 130 does not need to go to the atmospheric environment to load and unload the wafer 20, but can load and unload the wafer 30 in the first loading and unloading cavity 20 or the second loading and unloading cavity 22. Therefore, the situation where the temperature of the carrier plate 130 drops significantly due to entering the atmospheric environment is reduced, which is beneficial to the carrier plate 130 maintaining its original temperature, thereby reducing the demand for heating, saving energy, and reducing waste; and since the carrier plate 130 can maintain its original temperature or only has a small amount of temperature drop, the heating duration can also be reduced, which is beneficial to shortening the non-process time and thus improving the production efficiency; the carrier plate 130 can maintain its original temperature or only has a small amount of temperature drop, which is also beneficial to multiple carrier plates 130 maintaining a relatively consistent temperature, thereby being beneficial to improving the consistency of the wafer temperature on the carrier plate 130 and the stability of the wafer processing quality; in addition, since the carrier plate 130 does not need to go to the atmospheric environment to load and unload the wafer, the dust particles, water vapor and other sundries attached to the carrier plate 130 can also be reduced, thereby reducing the pollution to the wafer 30 and being more beneficial to improving the product quality and performance.

[0077] As Figure 14 shown, more specifically, in the above embodiment, the loading and unloading device includes a wafer lifting mechanism 202, which is arranged to be liftable. The wafer lifting mechanism 202 is used to lift the wafer 30 and transfer the wafer 30 between the material conveying device and the carrier plate 130; in this way, the wafer 30 on the material conveying device can be lifted by the wafer lifting mechanism 202 first, so that the wafer 30 is separated from the material conveying device, and then the carrier plate lifting mechanism 204 raises the carrier plate 130, while the wafer lifting mechanism 202 descends, so that the wafer 30 falls onto the carrier plate 130, realizing the transfer of the wafer 30 between the material conveying device and the carrier plate 130; it can be understood that a plurality of through holes are provided on the carrier plate 130 to avoid the lifting columns on the wafer lifting mechanism 202.

[0078] During the process of the carrier plate lifting mechanism 204 driving the empty carrier plate to move upward, the first transmission device 140 contracts. When the carrier plate 130 is higher than the position of the first transmission device 140, the first transmission device 140 extends, and the carrier plate lifting mechanism 204 descends, so that the carrier plate 130 falls onto the first transmission device 140 for the next step of transmission to transfer the wafer 30 to the next chamber.

[0079] In some other embodiments, multiple process chambers 10 are interconnected, and only the process chamber 10 at the starting end of the process route is connected to the first loading and unloading chamber 20. A carrier plate transposition device, that is, a carrier plate lifting mechanism 204, is provided in the process chamber 10 at the end of the process route for transferring the carrier plate 130 between the first transfer device 140 and the second transfer device 150. The processed silicon wafers 30 return to the process chamber 10 at the starting end of the process route together with the carrier plate 130 in the reverse direction, and then return to the first loading and unloading chamber 20. Then, the carrier plate 130 transferred onto the fourth transfer device 208 is transferred onto the third transfer device 206 through the carrier plate transposition device in the first loading and unloading chamber 20. Then, through the loading and unloading device (wafer lifting mechanism 202), the silicon wafers 30 are removed from the carrier plate 130 and sent to the second hanger 201.

[0080] In some other embodiments, there is only one process chamber 10, and a first loading and unloading chamber 20 and a second loading and unloading chamber 22 are respectively provided at both ends of the process chamber 10.

[0081] It can be understood that the first loading and unloading chamber 20 and the second loading and unloading chamber 22 have the same structure except for their positions.

[0082] As Figure 15 shown, an embodiment of the third aspect of the present invention provides a silicon wafer processing method for the silicon wafer processing equipment in the second aspect above, including:

[0083] Step S100: Obtain a silicon wafer processing instruction;

[0084] Step S102: According to the silicon wafer processing instruction, control the first hanger to carry the silicon wafer into the first loading and unloading chamber;

[0085] Step S104: Control the wafer lifting mechanism in the first loading and unloading chamber to transfer the silicon wafer on the first hanger to the carrier plate located on the third transfer device;

[0086] Step S106: Control the third transfer device to transfer the carrier plate to the first transfer device of the process chamber and perform the process treatment of the silicon wafer;

[0087] Step S108: After the process treatment is completed, control the first transfer device to transfer the carrier plate to the third transfer device in the second loading and unloading chamber;

[0088] Step S110: Control the wafer lifting mechanism in the second loading and unloading chamber to transfer the silicon wafer on the carrier plate to the second hanger;

[0089] Step S112: Control the second hanger to transport the silicon wafer out of the second loading and unloading chamber, and control the movement of the carrier plate lifting mechanism in the second loading and unloading chamber to transport the empty carrier plate from the third transfer device to the fourth transfer device in the second loading and unloading chamber;

[0090] Step S114: Control the fourth transfer device in the second loading and unloading cavity to reversely transfer the carrier plate from the second loading and unloading cavity, through the second transfer device in the process cavity, to the fourth transfer device in the first loading and unloading cavity;

[0091] Step S116: Control the carrier plate lifting mechanism in the first loading and unloading cavity to transfer the carrier plate from the fourth transfer device to the third transfer device.

[0092] In the above embodiments, by loading and unloading silicon wafers in the loading and unloading cavity, the carrier plate does not need to be transferred outside the silicon wafer processing equipment, reducing the contact with the external atmosphere, which is beneficial to improving the temperature stability and cleanliness of the carrier plate and the silicon wafers on the carrier plate; by respectively loading and unloading silicon wafers on the carrier plate at both ends of the process cavity, and circulating the carrier plate through the first transfer device, the second transfer device, the third transfer device, the fourth transfer device and the carrier plate lifting mechanism inside the silicon wafer processing equipment, on the one hand, it can ensure the cyclic transfer of the carrier plate inside the silicon wafer processing equipment, and is also beneficial to improving the transfer efficiency of the carrier plate and saving non-process time.

[0093] For a further understanding of the present invention, in combination with Figure 13 A necessary description is made for the internal circulation production line of the carrier plate vacuum cavity implemented by the content of the present invention. Placing the silicon wafer 30 on the carrier plate 130 or unloading the silicon wafer with the film layer deposited from the carrier plate 130 is respectively carried out under the silicon wafer loading vacuum cavity (the first loading and unloading cavity 20) and the silicon wafer vacuum unloading cavity (the second loading and unloading cavity 22).

[0094] As Figure 14 shown, taking the placement of the silicon wafer 30 on the carrier plate 130 as an example, the first fixture 200 for loading the silicon wafer 30 under the atmosphere enters the loading vacuum cavity of the silicon wafer 30, then the silicon wafer lifting mechanism 202 rises to lift and support the silicon wafer 30, disengaging from the support surface of the first fixture 200. The first fixture 200 exits from the loading vacuum cavity of the silicon wafer (the first loading and unloading cavity 20). The silicon wafer lifting mechanism 202 descends, and at the same time the carrier plate lifting mechanism 204 rises, and the silicon wafer 30 is dropped into the groove of the carrier plate 130 at one time, achieving the purpose of loading the silicon wafer 30 onto the carrier plate 130. The unloading of the silicon wafer 30 in the silicon wafer unloading cavity (the second loading and unloading cavity 22) can be realized by reversing the actions. In this way, the carrier plate 130 realizes the cyclic use of vacuum internal transfer within the interval of the silicon wafer loading vacuum cavity and the silicon wafer vacuum unloading cavity, keeping the carrier plate 130 from exiting the atmospheric environment.

[0095] The process cavity 10 of the silicon wafer according to the specific embodiments proposed in the present application has the following characteristics:

[0096] (1) The lifting device of the heating plate 160 is arranged on the side, leaving a transmission space for the lower carrier plate 130.

[0097] (2) The upper and lower double-layer rollers, namely the first transfer device and the second transfer device, can achieve the simultaneous transfer of the upper and lower two carrier plates 130.

[0098] (3) Since the lifting device of the heating plate 160 is placed on the side, when the upper carrier plate 130 is lifted by the heating plate 160 and reaches the process position for process deposition, a carrier plate 130 can be stored in the lower layer at the same time.

[0099] (4) The lower layer serves as the transfer channel for the return of the carrier plate 130, enabling the empty carrier plate 130 to flow back to the vacuum process chamber 10 through the lower rollers for wafer loading after the silicon wafer is unloaded from the carrier plate 130 in the vacuum chamber.

[0100] (5) During the circulation process of the carrier plate 130, it is always in the vacuum chamber, and the temperature of the carrier plate 130 is effectively maintained. The carrier plate 130 will no longer adsorb the gas in the atmospheric environment, and the influence of atmospheric dust on the cleanliness of the carrier plate 130 is also avoided.

[0101] The first specific embodiment:

[0102] As Figure 1 and Figure 2 shown, the process chamber 10 is equipped with upper and lower two transfer devices, and transfer methods such as rollers or belts can be used. Before the carrier plate 130 enters the process chamber 10, the vacuum valves 120 on both sides for entering and exiting the process chamber 10 are opened, and the heating plate 160 for lifting the upper carrier plate 130 is lowered below the first transfer device 140 on the upper layer.

[0103] As shown in Figure 1, the upper carrier plate 130 carries the silicon wafer 30 that will enter the process chamber 10 for film deposition, and enters the process chamber 10 from left to right along the direction indicated by the hollow arrow. The lower carrier plate 130 has unloaded the silicon wafer and is in an empty state, and enters the process chamber 10 from right to left along the direction indicated by the dotted hollow arrow. The two carrier plates 130 can enter the process chamber 10 through the transfer device at the same time, that is, the upper carrier plate 130 enters the process chamber 10 from the left through the first transfer device 140, and the lower carrier plate 130 enters the process chamber 10 from the right through the second transfer device 150; then the vacuum valves 120 on both sides of the process chamber 10 are closed, and the lifting device drives the heating plate 160 to rise, lifting the carrier plate 130 on the first transfer device 140 to the height of the film deposition position (process position). The height position of the process position can be adjusted by the lifting height position of the heating plate 160. As Figure 2 shown, this height position determines the distance D between the carrier plate 130 and the upper radio frequency electrode plate, that is, the electrode unit 188. The size relationship of the distance D is related to the final film deposition quality.

[0104] It can be understood that the transfer of the carrier plate 130 in the process chamber 10 can also be completed by the manipulators arranged in the units on both sides of the process chamber 10. Figure 2 At the positions of the first transfer device 140 and the second transfer device 150 shown in Figure 2 , only the first support device and the second support device can be provided to replace the first transfer device 140 and the second transfer device 150 respectively.

[0105] As Figures 3 to 6 shown, in the process chamber 10, synchronous lifting and jacking columns 170 are arranged on both sides of the chamber to realize the lifting of the carrier plate 130. Four (or multiple) jacking columns 170 are respectively dynamically vacuum-sealed with the vacuum chamber by four bellows 172. The four jacking columns 170 support the heating plate 160 through the heating plate support block 184 and the heat insulation cushion block 186. The synchronous jacking transmission mechanism is located in the atmospheric environment, that is, the transmission connecting rod 176 and the steering gear 178. In order to ensure the synchronous operation of the four jacking columns 170, in this specific embodiment, a servo motor 174 is used to realize the synchronous lifting of the four jacking columns 170 through the transmission connecting rod 176, the power commutator and the lifter.

[0106] The space left by the four synchronous jacking columns 170 in the width direction of the carrier plate 130 (perpendicular to the transfer direction of the carrier plate 130, or the in-out direction) is greater than the width of the carrier plate 130, so that the carrier plate 130 can use this space for transfer.

[0107] Second specific embodiment:

[0108] As Figures 8 to 12 shown, four (or multiple) cams 180 arranged on both sides of the chamber support the heating plate 160 through the heating plate support block 184 and the heat insulation cushion block 186. The four cams 180 rotate synchronously to realize different height positions of the carrier plate 130. The rotation of the cam 180 can be that each cam 180 is individually driven by a servo motor 174, or the power is transmitted externally through the transmission connecting rod 176, the synchronous belt, etc., so that the synchronous lifting function can be realized by being driven by one servo motor 174. The rotary dynamic seal 182 of the cam 180 can be in the form of a magnetic fluid seal or a rubber sealing ring dynamic seal 182. The transfer path and method of the carrier plate 130 are the same as those in the first specific embodiment and will not be repeated here.

[0109] The technical solution of the present invention has been described in detail above with reference to the accompanying drawings. Through the technical solution of the present invention, the jacking device is arranged on both sides of the chamber, and the transfer assembly is arranged, which facilitates the reciprocating transfer of the carrier plate in the process chamber, reduces the transfer time and the turnover time of the carrier plate, is beneficial to shortening the non-process time, and also reduces the contact between the carrier plate and the atmosphere, improves the stability of the carrier plate temperature and the cleanliness of the carrier plate, thereby being beneficial to improving the production efficiency and the product quality.

[0110] In the present invention, the terms "first", "second" are only for descriptive purposes and cannot be construed as indicating or implying relative importance; the term "plural" means two or more, unless otherwise clearly defined. Terms such as "installed", "connected", "joined", "fixed" and the like should be understood in a broad sense. For example, "connected" can be a fixed connection, a detachable connection, or an integral connection; "joined" can be a direct connection or an indirect connection through an intermediate medium. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0111] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "upper", "lower", "left", "right", "front", "rear", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or unit referred to must have a specific direction, be constructed and operated in a specific orientation. Therefore, it should not be construed as a limitation of the present invention.

[0112] In the description of this specification, the descriptions of terms such as "one embodiment", "some embodiments", "specific embodiments", etc. mean that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or instance. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0113] The above are only the preferred embodiments of the present invention and are not used to limit the present invention. For those skilled in the art, the present invention can have various changes and modifications. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. A process chamber for a silicon wafer, characterized in that, Comprising: A housing, within which there is a chamber; Vacuum valves, which are respectively provided on both sides of the housing, and the vacuum valves are used to seal the chamber; A carrier plate, which enters and exits the chamber through the vacuum valves, and the carrier plate is used to carry silicon wafers; A transfer assembly, which is arranged within the chamber, and the transfer assembly is used to transfer the carrier plate; A heating plate, which is arranged within the chamber, and the heating plate is used to carry the carrier plate with silicon wafers thereon and heat the carrier plate; A lifting device, which is connected to the heating plate and is used to lift the heating plate; Wherein, in the entry and exit direction of the carrier plate, on both sides of the chamber, there are respectively provided a plurality of the lifting devices, and the entry and exit direction of the carrier plate is the direction from one vacuum valve to the other vacuum valve; The chamber has a front side and a rear side, and there is respectively provided one vacuum valve on the front side and the rear side of the chamber, and the entry and exit direction of the carrier plate is the front-rear direction of the chamber; The chamber also has a left side and a right side, and there are a plurality of the lifting devices provided on the left side of the chamber, and there are a plurality of the lifting devices provided on the right side of the chamber; In the transverse direction of the entry and exit direction of the carrier plate, the distance between the lifting devices respectively located on both sides of the chamber is greater than the width of the carrier plate in the transverse direction of the entry and exit direction, and the carrier plate can pass through the gap between the lifting devices on both sides of the chamber.

2. The process chamber for silicon wafers according to claim 1, wherein: The transfer assembly includes: a first transfer device, which is used to transfer the carrier plate; A second transfer device, which is used to transfer the carrier plate, the second transfer device is arranged at the bottom of the first transfer device, and the transfer directions of the first transfer device and the second transfer device are opposite.

3. The process chamber for a silicon wafer according to claim 2, wherein, It further includes: A servo motor, which is connected to the lifting device, and the servo motor is used to drive the lifting device; A transmission connecting rod and a steering gear that are connected to each other, and each lifting device is connected to the servo motor through the transmission connecting rod and the steering gear; or A synchronous belt and a steering gear that are connected to each other, and each lifting device is connected to the servo motor through the synchronous belt and the steering gear.

4. The process chamber for silicon wafers according to claim 3, wherein: The lifting device includes a lifting column; A bellows, which is arranged within the chamber, and a part of the lifting column is arranged within the bellows, and the bellows is used to seal the lifting column; The other part of the lifting column extends out of the housing and is connected to the servo motor, and the servo motor is used to drive the lifting column to move up and down.

5. The process chamber for silicon wafers according to claim 3, wherein: The lifting device includes a cam and a dynamic seal, the cam is connected to the servo motor, and the dynamic seal is used to seal the cam.

6. The process chamber for a silicon wafer according to any one of claims 1-5, characterized in that, It further includes: A heating plate support block and a heat insulation cushion block, which are arranged between the lifting device and the heating plate, and the heat insulation cushion block is arranged between the heating plate support block and the heat insulation cushion block, the heating plate support block is used to support the heating plate, and the heat insulation cushion block is used for heat insulation.

7. The process chamber for a silicon wafer according to any one of claims 1 - 5, characterized in that the transfer assembly includes a plurality of rollers or a belt conveyor mechanism, or the transfer assembly includes a manipulator, a first support device, and a second support device, both the first support device and the second support device are used to support the carrier plate, and the manipulator is used to move the carrier plate.

8. The process chamber for a silicon wafer according to any one of claims 1-5, characterized in that, It further includes: an electrode unit, provided at the top of the chamber, and the electrode unit is used to process the silicon wafer.

9. A silicon wafer processing device, characterized in that, It includes: a loading and unloading chamber, used to provide a space for loading and unloading the silicon wafer; the process chamber for a silicon wafer according to any one of claims 1 - 8, at least one end of the process chamber is connected to the loading and unloading chamber; a material transporting device, which can enter and exit the loading and unloading chamber, and the material transporting device is used to transport the silicon wafer; a loading and unloading device, provided in the loading and unloading chamber, and the loading and unloading device is used to load and unload the silicon wafer between the material transporting device and the carrier plate of the process chamber; a third transfer device, provided in the loading and unloading chamber, and the third transfer device is used to transfer the carrier plate with the first transfer device of the process chamber; a fourth transfer device, provided in the loading and unloading chamber, and the fourth transfer device is used to transfer the carrier plate with the second transfer device of the process chamber; a carrier plate swapping device, used to transfer the carrier plate between the third transfer device and the fourth transfer device, or transfer the carrier plate between the first transfer device and the second transfer device.

10. A method for processing a silicon wafer, which is used for the silicon wafer processing equipment described in claim 9, characterized in that, It includes: obtaining a silicon wafer processing instruction; controlling a first material transporting device to carry the silicon wafer into a first loading and unloading chamber according to the silicon wafer processing instruction; controlling the loading and unloading device in the first loading and unloading chamber to transfer the silicon wafer on the first material transporting device to the carrier plate located on the third transfer device; controlling the third transfer device to transfer the carrier plate to the first transfer device of the process chamber to perform the process treatment of the silicon wafer; after the process treatment is completed, controlling the first transfer device to transfer the carrier plate to the third transfer device in the second loading and unloading chamber; controlling the loading and unloading device in the second loading and unloading chamber to transfer the silicon wafer on the carrier plate to a second material transporting device; controlling the second material transporting device to transport the silicon wafer out of the second loading and unloading chamber, and controlling the movement of the carrier plate swapping device in the second loading and unloading chamber to transport the empty carrier plate from the third transfer device to the fourth transfer device in the second loading and unloading chamber; controlling the fourth transfer device in the second loading and unloading chamber to reversely transfer the carrier plate from the second loading and unloading chamber, through the second transfer device in the process chamber, to the fourth transfer device in the first loading and unloading chamber; controlling the carrier plate swapping device in the first loading and unloading chamber to transfer the carrier plate from the fourth transfer device to the third transfer device.

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