Piezoelectric d33-like vibration device and display integrating the same

Abstract

The present invention provides a piezoelectric d33-like vibration device, which at least includes a plurality of transistors and a plurality of receivers. The plurality of receivers are electrically connected to the transistors, and each transistor controls the corresponding receiver to receive a second vibration wave generated by a first vibration wave reflected by an object to generate a sensing signal. Each receiver has a first electrode, a second electrode, and a nano-gap formed between the first electrode and the second electrode and formed by a semiconductor metal compound. The present invention also provides a display integrated with the above-mentioned piezoelectric d33-like vibration device. The present invention is easy to integrate with semiconductor processes, easy to process, low in cost, and pollution-free.

Description

Technical Field

[0001] The present invention relates to a piezoelectric D33-like vibration device and a display integrating the same, and in particular to a piezoelectric D33-like vibration device with an integrated transceiver, which can be applied to various electronic devices, equipment and systems, and to a display integrating the above-mentioned transceiver. Background Art

[0002] Traditional vibration transceivers (or sensors or transducers), such as sound wave or ultrasonic transceivers, can be used for medical organ image measurement, gesture detection, three-dimensional touch, fingerprint sensing, subcutaneous bio-information (microvascular information, blood flow information) measurement, etc., and can use air or fluid as the medium, or can be object contact. Traditional implementation technology usually uses piezoelectric materials, such as polyvinylidene difluoride (PVDF) or lead zirconate titanate (PZT), etc., and its operating mode is to use the d33 mode of the material, that is, the direction of the electric field applied to the material is parallel to its vibration direction.

[0003] Figure 1A and 1B A schematic diagram showing a conventional d33 vibrating transceiver. Figure 1A and 1B As shown, the conventional d33 vibration transceiver 300 includes a piezoelectric material block 310. A voltage source 340 is applied to the upper and lower ends of the piezoelectric material block 310 to generate an electric field to deform the piezoelectric material. When the electric field continues to change, the piezoelectric material block 310 will vibrate along the vibration direction 320. When the electric field direction 330 generated by the piezoelectric material block 310 is parallel to the vibration direction 320, it is called operating in the d33 mode. For example, in Figure 1A In FIG. 3 , the voltage source 340 applies a negative voltage and a positive voltage to the first electrode 311 and the second electrode 312 respectively, resulting in an upward electric field direction 330 and a contraction of the piezoelectric material block 310 ; and Figure 1B In the embodiment, the voltage source 340 applies a positive voltage and a negative voltage to the first electrode 311 and the second electrode 312 respectively, resulting in a downward electric field direction 330 and an elongation of the piezoelectric material block 310. Figure 1A and 1B When an alternating electric field is applied, the piezoelectric material block 310 may experience expansion and contraction vibrations.

[0004] In manufacturing, PVDF is an engineering plastic that is not easy to use semiconductor processes such as lithography for exposure and development. The processing methods usually rely on laser processing, for example. Therefore, it is very problematic to integrate PVDF into semiconductor processes. PZT is polluting and difficult to micro-process. In addition, bulk materials are required to achieve the d33 operating mode (for example, thin film PZT operates in d31 mode). Bulk PZT is usually produced by sintering, with sintering temperatures as high as 700 to 800°C, or even up to 1000°C. Therefore, traditional d33 PZT elements are independent elements and are difficult to integrate into semiconductor processes. They cannot even be integrated with integrated circuit processes to integrate piezoelectric elements into integrated circuits. And lead is polluting to semiconductor devices. Furthermore, PZT needs to use platinum as electrodes, which makes the manufacturing cost high.

[0005] Furthermore, when operating traditional piezoelectric materials, the voltage applied is usually tens of volts to hundreds of volts. Such a high voltage is a problem when integrating the system and is also a major problem when integrating with the semiconductor process. Summary of the invention

[0006] One object of the present invention is to provide a piezoelectric d33-like vibration device, which has the advantages of being easy to integrate with semiconductor processes, easy to process, low cost and pollution-free.

[0007] To achieve the above-mentioned purpose, the present invention provides a piezoelectric d33-like vibration device, which at least includes a plurality of transistors and a plurality of receivers. The receivers are electrically connected to the transistors, and each transistor controls the corresponding receiver to receive a second vibration wave generated by a first vibration wave reflected by an object to generate a sensing signal. Each receiver has a first electrode, a second electrode, and a nano-gap formed by a semiconductor metal compound and located between the first electrode and the second electrode.

[0008] Preferably, each of the receivers is further used as a transmitter, and as a transceiver unit, the transceiver unit and a corresponding one of the transistors form an integrated transceiver. In each of the integrated transceivers, the transistor controls the transceiver unit to transmit the first oscillation wave at a first time point, and then controls the transceiver unit to receive the second oscillation wave at a second time point.

[0009] Preferably, the device further comprises: a substrate, wherein each of the integrated transceivers is disposed on the substrate, each of the transistors is disposed on or in the substrate, and each of the transceiver units is adjacent to the transistor.

[0010] Preferably, the transistor has a gate, a drain, a source, and a first semiconductor layer located between the gate, the drain and the source.

[0011] Preferably, the transceiver unit further has a second semiconductor layer located between the substrate and the first electrode.

[0012] Preferably, the transistor has a gate, a drain, a source, and a first semiconductor layer located between the gate, the drain and the source;

[0013] The transceiver unit further has a second semiconductor layer located between the substrate and the first electrode; and

[0014] The first semiconductor layer and the second semiconductor layer are made of the same material.

[0015] Preferably, the transistor has a gate, a drain, a source, and a first semiconductor layer located between the gate, the drain and the source;

[0016] The transceiver unit further has a second semiconductor layer located between the substrate and the first electrode; and

[0017] The first semiconductor layer and the second semiconductor layer are made of different materials.

[0018] Preferably, a height of the nanogap is less than or equal to 200 nanometers.

[0019] Preferably, the device further comprises a driving sensing circuit module electrically connected to the integrated transceiver and providing a driving voltage of 3.3 to 12 volts to the integrated transceiver.

[0020] Preferably, the semiconductor metal compound is a metal silicide layer.

[0021] Preferably, a protective layer is further included, the nanogap is surrounded by the protective layer and the first electrode, and the second electrode is located on the protective layer.

[0022] Preferably, the substrate is a glass substrate, a flexible substrate or a semiconductor substrate formed with an insulating layer.

[0023] Preferably, it is integrated into a display or combined under the display.

[0024] Preferably, the transistor has a gate, a drain, a source, and a first semiconductor layer located between the gate, the drain and the source;

[0025] The transceiver unit further has a second semiconductor layer located between the substrate and the first electrode; and

[0026] This type of piezoelectric d33 vibration device includes a plurality of the integrated transceivers, and the first electrodes of the transceiver units are electrically connected together through the second semiconductor layers and the first semiconductor layers.

[0027] Preferably, the piezoelectric d33 vibration device includes a plurality of the integrated transceivers, and the phase differences of the first vibration waves of the transceiver units are controlled at the same time. By means of beam forming, the energy is concentrated and scanned in sequence to maximize the energy of each first vibration wave, thereby increasing the sensitivity of sensing.

[0028] Preferably, the functions of biometric sensing, 3D touch and gesture detection can be provided simultaneously.

[0029] Preferably, a variable frequency transceiver is used to sense the depth information of different features of the object.

[0030] Preferably, all peripheral walls of the nanogap are free of any holes and filling materials.

[0031] Preferably, the nanogap is adjacent to the semiconductor metal compound through a metal layer of the first electrode, or is directly adjacent to the semiconductor metal compound.

[0032] Preferably, the transceiver unit further comprises: a dielectric layer group located between the substrate and the first electrode, the substrate and the dielectric layer group together form an integrated circuit electrically connected to the first electrode and the second electrode; and a second insulating layer located between the nanogap and the second electrode.

[0033] Preferably, the dielectric layer group has a plurality of metal plugs disposed between the first electrode and the integrated circuit and electrically connecting the first electrode to the integrated circuit.

[0034] Preferably, the material of the second electrode is single crystal silicon, polycrystalline silicon or amorphous silicon.

[0035] Preferably, the device further comprises: a transmitter electrically connected to the transistors, wherein the transistors control the transmitter to emit the first vibration wave at a first time point and then control the receivers to receive the second vibration wave at a second time point.

[0036] Preferably, the emitter has a first electrode, a second electrode, and a second nanogap located between the first electrode of the emitter and the second electrode of the emitter and formed by the semiconductor metal compound or another semiconductor metal compound.

[0037] Preferably, the method further comprises a substrate, wherein the transmitter and the receivers are disposed on the substrate, each of the transistors is disposed on or in the substrate, and the height of the second nanogap is greater than the height of each of the nanogap.

[0038] Preferably, it further includes a substrate, wherein the receivers are arranged on an upper surface of the substrate, each of the transistors is arranged on or in the substrate, and the transmitter is a piezoelectric transmitter, which is arranged on a lower surface of the substrate or above the receivers.

[0039] Preferably, the transmitter is a piezoelectric transmitter, disposed on or above one or more of the receivers.

[0040] Preferably, the transmitter and one or more of the receivers share the second electrode for transmission and reception.

[0041] The present invention also provides a display, which at least includes a plurality of transistors, a plurality of receivers and a plurality of display units. The receivers are electrically connected to the transistors, and each transistor controls the corresponding receiver to receive a second vibration wave generated by a first vibration wave reflected by an object to generate a sensing signal. Each receiver has a first electrode, a second electrode and a nano-gap formed by a semiconductor metal compound and located between the first electrode and the second electrode. Each display unit includes at least one display control transistor and a display pixel electrically connected together, and the display control transistor controls the enabling and disabling of the display pixel, so that the display pixel displays a light signal and does not display a light signal to display data.

[0042] Preferably, each of the receivers is further used as a transmitter, and as a transceiver unit, the transceiver unit and a corresponding one of the transistors form an integrated transceiver. In each of the integrated transceivers, the transistor controls the transceiver unit to transmit the first oscillation wave at a first time point, and then controls the transceiver unit to receive the second oscillation wave at a second time point.

[0043] Preferably, it further comprises: a substrate, wherein each of the integrated transceivers is located on the substrate, each of the integrated transceivers comprises the transceiver unit and at least one transceiver control transistor electrically connected together, and the transceiver control transistor controls the transmission and reception of the transceiver unit.

[0044] Preferably, it further includes: a transistor configuration layer located on the substrate, wherein the transceiver control transistor and the transceiver unit are located in the transistor configuration layer; and a display pixel configuration layer located on the transistor configuration layer, wherein the display pixel is located in the display pixel configuration layer.

[0045] Preferably, each of the transceiver units is located outside the coverage area of ​​each of the display units.

[0046] Preferably, each of the transceiver units is located within the coverage area of ​​each of the display units.

[0047] Preferably, the display pixel configuration layer is a light emitting layer or a light switch layer.

[0048] Preferably, the substrate is a rigid substrate, a flexible substrate or a transparent substrate.

[0049] Preferably, the nanogap is adjacent to the semiconductor metal compound through a metal layer of the first electrode, or is directly adjacent to the semiconductor metal compound.

[0050] Preferably, all peripheral walls of the nanogap are free of any holes and filling materials.

[0051] Preferably, the device further comprises: a transmitter electrically connected to the transistors, wherein the transistors control the transmitter to emit the first vibration wave at a first time point and then control the receivers to receive the second vibration wave at a second time point.

[0052] Preferably, the emitter has a first electrode, a second electrode, and a second nanogap located between the first electrode of the emitter and the second electrode of the emitter and formed by the semiconductor metal compound or another semiconductor metal compound.

[0053] Preferably, the method further comprises a substrate, wherein the transmitter and the receivers are disposed on the substrate, each of the transistors is disposed on or in the substrate, and the height of the second nanogap is greater than the height of each of the nanogap.

[0054] Preferably, it further includes a substrate, wherein the receivers are arranged on an upper surface of the substrate, each of the transistors is arranged on or in the substrate, and the transmitter is a piezoelectric transmitter, which is arranged on a lower surface of the substrate or above the receivers.

[0055] Through the above-mentioned implementation of the present invention, a piezoelectric D33-like structure can be provided as a vibration transceiver, which does not require the use of piezoelectric materials but has the same functions as piezoelectric vibration elements. More specifically, it can be integrated with semiconductor processes and even integrated circuit elements without temperature restrictions and pollution problems. At the same time, only standard voltages, such as 3.3V / 5V, are required for operation, greatly increasing the ease of system integration.

[0056] In order to make the above contents of the present invention more clearly understood, preferred embodiments are specifically cited below and described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0057] Figure 1A and 1B A schematic diagram showing a conventional d33 vibratory transceiver.

[0058] Figure 2A , 2B and Figure 3Schematic diagram showing three applications of a piezoelectric d33-like vibration device according to a preferred embodiment of the present invention.

[0059] Figure 4 A schematic diagram showing a piezoelectric d33-like vibration device according to a preferred embodiment of the present invention.

[0060] Figure 5 show Figure 4 A partial cross-sectional view of an example of a piezoelectric D33-like vibration device.

[0061] Figures 6A to 6G show Figure 5 A schematic structural cross-sectional diagram of each step of a method for manufacturing a piezoelectric d33-like vibration device.

[0062] Figure 7 show Figure 4 A partial cross-sectional view of another example of a piezoelectric D33-like vibration device.

[0063] Figures 7A to 7G show Figure 7 A schematic structural cross-sectional diagram of each step of a method for manufacturing a piezoelectric d33-like vibration device.

[0064] Figure 8 A schematic diagram showing another application of a piezoelectric d33-like vibration device according to a preferred embodiment of the present invention.

[0065] Fig. 9 A schematic diagram showing the integration of the piezoelectric d33-like vibration device of the present invention into a CMOS back-end process.

[0066] Figures 9A to 9C show Fig. 9 Schematic diagrams of several variations of .

[0067] Figures 10A to 10D Schematic diagram showing top views of four examples of receiver and transmitter layouts.

[0068] Fig.11 Schematic diagram of a partial cross section showing an integrated transceiver with two nanogaps of different heights.

[0069] Fig.12 Display corresponds to Fig. 10D Schematic diagram of the transmitter configuration.

[0070] Fig.13A and 13B Schematic diagrams showing two examples of displays using the above-mentioned transceiver device.

[0071] Fig.14 Displays the corresponding Fig. 10D Schematic diagram of another configuration of the transmitter.

[0072] Fig.15 Show Mates Figure 5 Schematic diagram of the piezoelectric transmitter configuration. DETAILED DESCRIPTION

[0073] The piezoelectric d33-like vibration device provided by the embodiment of the present invention does not use piezoelectric materials, but uses a vibration structure, which is a thin film structure with a vacuum or air gap, to achieve the transceiver function of making the direction of the applied electric field the same as the direction of the vibration. Because d33 is usually for piezoelectric materials, but this case uses a microstructure to replace the traditional piezoelectric material, the vibration transceiver of this case can be called a piezoelectric d33-like vibration device to simulate the behavior of bulk piezoelectric materials.

[0074] Figure 2A , 2B and Figure 3 Schematic diagram showing three applications of the piezoelectric d33-like vibration device 100 according to a preferred embodiment of the present invention in handheld electronic devices. Of course, the system application of the device of the present invention is not limited to this. Figure 2A As shown, the piezoelectric d33-like vibration device 100 can be integrated into the display 210 installed on the front (display surface) of the mobile phone 200 or combined under the display 210 (for example, it is directly or indirectly combined with the lower surface of the display 210). A plurality of operation blocks 220 are displayed on the display 210 for the user to click, and a front lens 230 is installed next to the display 210. Of course, the mobile phone system is only an example here. Those skilled in the art should understand that with the evolution of time and application, mobile phones can be variously changed. Due to the manufacturing characteristics, the device of the present invention can be integrated into the mobile phone display or set under the display, and it can also be only a part of the area (such as Figure 2A The dotted area shown in the figure) or the entire area (as shown in the figure) Figure 2B As shown, the vibration device 100 covers the entire area of ​​the display 210). Of course, if the entire mobile phone display is covered, the device of the present invention can even cover multiple functions together, such as being able to simultaneously sense biometric features (such as fingerprints, finger veins, blood flow, heart rate, etc.) and 3D touch and gesture detection, etc., forming an all-in-one function integration. These features are not seen in the prior art and are also important features of the device of the present invention. Figure 3As shown, the piezoelectric d33-like vibration device 100 can also be installed below the back cover 240 on the back of the mobile phone 200, wherein the back of the mobile phone 200 is also equipped with a rear lens 250. The piezoelectric d33-like vibration device 100 can provide functions such as fingerprint sensing, blood vessel vein pattern or blood information, but is not limited to this. Any physical quantity that can be sensed by vibration waves can be implemented by this. Of course, the device of the present invention does not have to be integrated with a mobile phone or a display or a module. It can be designed separately as an independent vibration wave system device, which can be used to replace the existing piezoelectric d33 vibration wave elements (for organ scanning) used in the market. For example, a mobile phone and a cloud system (which can be combined with artificial intelligence) are connected to the independent device of the present invention, which can be used as a portable vibration wave detection system, such as medical or industrial application imaging. The present invention will be explained by using fingerprint sensing applied to mobile phones as an example to help those skilled in the art understand the characteristics and innovations of the present invention.

[0075] In an embodiment of the present invention, a voltage is used to drive two electrodes to generate an electric field, one of which is a thin film structure, and the other electrode is fixed on a substrate. There is a vacuum or air gap between the two electrodes. When the applied electric field is an AC signal, the film will vibrate, and if the frequency of the AC signal is the same as the mechanical resonance frequency of the thin film structure, the film will produce mechanical resonance, amplifying the mechanical energy and amplitude. This is a preferred embodiment. Of course, the device of the present invention can also change the rigidity of the structure through electrostatic attraction or even pull-in contact of the thin film structure, thereby changing the frequency of resonance. In another embodiment, this structure can be operated in a non-resonant mode. In this way, the device can be a frequency-converting transceiver that senses the depth information of different sensed objects (features) of an object, which helps to construct a complete 3D image. For example, if it is used to measure the biometric information of a finger, it can be performed by frequency conversion, and even the fingerprint path and the vein pattern or blood information inside the finger can be measured at the same time.

[0076] Figure 4 A schematic diagram of a piezoelectric d33-like vibration device 100 according to a preferred embodiment of the present invention is shown. Figure 5 show Figure 4 A partial cross-sectional view of an example of a piezoelectric d33-like vibration device. Figure 4 and Figure 5As shown, the piezoelectric d33-like vibration device 100 of this embodiment at least includes a plurality of transistors 30 and a plurality of receivers 40R. The plurality of receivers 40R are electrically connected to these transistors 30 (although the figure shows a side-by-side configuration, a stacked configuration such as the receivers 40R stacked on top of the transistors 30 may also be implemented), and each transistor 30 controls the corresponding receiver 40R to receive a second vibration wave W2 generated by a first vibration wave W1 reflected by an object F to generate a sensing signal. Each receiver 40R has a first electrode 41, a second electrode 42, and a nanogap 43 formed by a semiconductor metal compound and located between the first electrode 41 and the second electrode 42. In this embodiment, each receiver 40R can also be used as a transmitter 40T and as a transceiver unit 40. The transceiver unit 40 and a corresponding one of these transistors 30 form an integrated transceiver 20. In the integrated transceiver 20 , the transceiver unit 40 is adjacent to the transistor 30 . After the transistor 30 controls the transceiver unit 40 to transmit the first oscillation wave W1 at a first time point, it controls the transceiver unit 40 to receive the second oscillation wave W2 at a second time point.

[0077] The piezoelectric d33-like vibration device 100 may further include a substrate 10 and a driving sensing circuit module 50. The substrate 10 has an upper surface 10T and a lower surface 10B. Each integrated transceiver 20 is disposed on the upper surface 10T of the substrate 10. It is worth noting that a single integrated transceiver 20 can also achieve the function of the present invention, and the driving sensing circuit module 50 can be a built-in or external circuit device.

[0078] The substrate 10 may be a glass substrate, a flexible substrate (such as a polyimide (PI) substrate) or any insulating substrate, or a semiconductor substrate formed with an insulating layer, etc., but is certainly not limited thereto.

[0079] Figure 5This is an embodiment of the present invention using a thin film transistor (TFT) process. As mentioned above, the device of the present invention is illustrated by being applied to a mobile phone system, and the most important human-machine interface of a mobile phone is the mobile phone display. Therefore, the device of the present invention is made using the TFT process of the mobile phone display. Therefore, it can be integrated with the mobile phone's organic light-emitting diode (OLED) process into a single panel, or the OLED process can be omitted, and only the TFT process can be retained to complete the device. Of course, it is not limited to OLED displays. For example, LCD or future uLED (Micro LED) technology, etc. can all be technical platforms applicable to the present invention, or the device can be arranged under the mobile phone display or the back cover or side of the mobile phone through assembly. This is one of the most important spirits of the present invention. Multiple integrated transceivers 20 are arranged along Figure 5 The transistors 30 are arranged in an array in the X-axis direction and are disposed on the substrate 10. Each integrated transceiver 20 includes at least one transistor 30 (which may be one or more transistors formed on a glass substrate or other substrates) and at least one transceiver unit 40. In this embodiment, the transistor 30 is illustrated by a thin film transistor as an example, but the present invention is not limited thereto. The transceiver unit 40 is disposed on one side (horizontal side) of the transistor 30, and the first semiconductor layer 34 and the second semiconductor layer 44 are the same polysilicon layer or amorphous silicon layer. In other embodiments, the transceiver unit 40 can be stacked on the vertical side (above or below, for example, manufacturing two layers of polysilicon layers or amorphous silicon layers) of the transistor 30, so that the horizontal space can be saved. The transistor 30 is disposed on the substrate 10 and has a gate 31, a drain 32, a source 33, and a first semiconductor layer 34 located between the gate 31, the drain 32 and the source 33. The gate 31 is formed on the substrate 10.

[0080] The transceiver unit 40 is adjacent to the transistor 30 and is directly or indirectly electrically connected to the transistor 30. The transistor 30 controls the transmission and reception (active and passive functions) of the transceiver unit 40, so that the transceiver unit 40 (drives the thin film electrode) transmits a first vibration wave W1 to an object F (which can be a biological or non-biological object). The object F reflects the first vibration wave W1 and generates a second vibration wave W2. The transceiver unit 40 receives the second vibration wave W2 (vibrates the thin film electrode) and generates a sensing signal. For example, the peak FR and valley FV of the object F of the finger are different from the distance of the piezoelectric d33 vibration device 100, so there will be corresponding different sensing signals. The meaning of the transceiver unit 40 being adjacent to the transistor 30 can include the transceiver unit 40 being located on the left side, right side, upper side, lower side, upper left side, lower left side, upper right side or lower right side of the transistor 30. In one example, the space covered by the transistor 30 and the transceiver unit 40 does not overlap each other.

[0081] In this embodiment, if Figure 5 and Figure 4As shown, the piezoelectric d33-like vibration device 100 applies a variable electric field to generate a first vibration wave W1 that vibrates up and down by energizing the first electrode 41 and the second electrode 42. The first vibration wave W1 transmitted upward encounters one or more interfaces of the finger F close to the device 100, and is reflected by the interface of the finger F to generate a second vibration wave W2. The device 100 senses the properties of the second vibration wave W2, or senses the interference wave W3 between the second vibration wave W2 and the first vibration wave W1 to generate a sensing signal. In one example, the second vibration wave W2 is transmitted downward, interfering with the change of the sensing capacitance between the second electrode 42 and the first electrode 41 to generate a sensing signal. In another example, the second vibration wave W2 is transmitted downward and interferes with the first vibration wave W1 transmitted downward to generate an interference wave W3. The second electrode 42 and the first electrode 41 measure the interference wave W3 by sensing the change of capacitance to generate a sensing signal. Therefore, through the design of an array device 100, the distance information between the peak FR and the valley FV of the finger F and the device 100 can be measured, thereby generating a fingerprint image (the skin is the interface at this time), and the frequency of the first vibration wave W1 can be adjusted simultaneously or at different time periods, and the first vibration wave W1 can be allowed to penetrate the skin, thereby measuring the distribution image of the blood vessels according to the reflection of different vibration waves by the blood vessels (the blood vessel wall is the interface at this time). In one example, the interference wave W3 is generated by the constructive interference of the second vibration wave W2 and the first vibration wave W1 to obtain a larger amplitude. In another example, the interference wave W3 is generated by the destructive interference of the second vibration wave W2 and the first vibration wave W1 to obtain a smaller amplitude. In yet another example, the device 100 can be designed to allow the second vibration wave W2 generated by the reflection of the peak FR of the finger F to generate constructive interference with the first vibration wave W1, and to allow the second vibration wave W2 generated by the reflection of the valley FV of the finger F to generate destructive interference with the first vibration wave W1, so that the resolution of the peak and valley can be improved. Another transmission sensing mode is the time of flight (TOF) mode, which switches the time of transmission and sensing, and uses the time difference of sensing to determine the distance traveled by the vibration wave, thereby constructing a 3D image of the object F. Because the reflection time of the forward wave encountering different interfaces is different, images of different interfaces can be stacked at the same time, such as fingerprint and vein images. At the same time, the purpose of sensing different interfaces can also be achieved by emitting waves of different frequencies. In this embodiment, the frequency of the vibration wave can be between 20KHz and 200MHz, and its optimal frequency range can be 2MHz to 40MHz. In another sensing mode, several transceiver units can be controlled at the same time, and the phase difference of the first vibration waves of each transceiver unit can be controlled. By using beam forming, the energy is concentrated and scanned in sequence, so that the energy of the first vibration wave W1 can be maximized (the energy of the reflected second vibration wave W2 is also increased), which can increase the sensitivity of sensing.

[0082] To simplify, Figure 4It is only used to describe the basic principle and practical application of the vibration wave device of the present invention, such as the system embodiments of Figures 2 and 3, and another display structure is included between the device and the object (such as a finger), that is, the aforementioned W1 / W2 needs to be transmitted between different materials in the display to complete the transceiver function. This part should be understandable to those skilled in the art, so the structure of the display will not be explained in detail in this article.

[0083] The transceiver unit 40 has a first electrode 41, a second electrode 42, a nanogap 43 between the first electrode 41 and the second electrode 42, and a second semiconductor layer 44 between the substrate 10 and the first electrode 41. In this embodiment, the first semiconductor layer 34 and the second semiconductor layer 44 are made of the same material. When a thin film transistor is used, the first semiconductor layer 34 and the second semiconductor layer 44 are made of the same material, and even the same manufacturing process is used to complete the two. However, the present invention is not limited to this. For example, the following description is used Fig. 9 In the embodiment, the first semiconductor layer 34 and the second semiconductor layer 44 can be formed of different materials (for example, the material of the first semiconductor layer is single crystal silicon, polycrystalline silicon or amorphous silicon, and the second semiconductor layer 44 is polycrystalline silicon or amorphous silicon, and the two can be the same layer or different layers of materials). Figure 5 In the Y-axis direction), the electric field strength is less than or equal to 200 nanometers (nm), 100 nm or even about 50 nm. Since the electric field strength is inversely proportional to the square of the distance under the same driving voltage, and since the gap is very small, even a very small voltage can generate a large electric field to drive the electrode, which is another spirit of the present invention. Therefore, the driving sensing circuit module 50 electrically connected to each integrated transceiver 20 can provide a driving voltage of 3.3 to 12 volts to each integrated transceiver 20, instead of having to provide a driving voltage of tens of volts to hundreds of volts as in the conventional technology, so the design of the system and the design of the sensing driving integrated circuit (IC) are relatively easy. The electrical connection method can be achieved by a conventional conductor connection method, which will not be repeated here.

[0084] If such a small nano-gap is to be implemented in a conventional manner, it is usually achieved by using a sacrificial layer. For example, a sacrificial layer and a protective layer on the sacrificial layer are first formed, and then several openings are formed on the protective layer, and the sacrificial layer is etched away through these openings. However, due to the small gap, the sacrificial layer is difficult to remove (capillary phenomenon), or if the sacrificial layer is removed, the thin film structure will adhere to the bottom electrode, so the nano-scale sacrificial layer structure is inefficient and difficult to manufacture. In addition, these openings need to be filled in the end, and the filling material can easily fall into the opening to form a columnar structure to support the film, making it impossible for the film to achieve the vibration function. Therefore, traditional technology cannot be easily achieved. The current trend is that the larger the area of ​​the finger biosensor, the better, which can meet the user's blind pressing (any press can complete the required function), or can press more than two fingerprints at the same time to increase security, but if the silicon integrated circuit process is used, the cost will remain high. If the traditional piezoelectric material block is used to integrate or apply to a thin film transistor liquid crystal display (TFT-LCD), it is very difficult to implement, because the piezoelectric material block needs a very high temperature to be sintered. Therefore, the structure and material of the present invention are very simple. Not only is the material non-polluting, but its manufacturing temperature is also very low (<300°C), and it can be integrated into any TFT process, silicon integrated circuit process (such as CMOS process), etc., which is also unprecedented.

[0085] In this embodiment, the first electrode 41 includes a semiconductor metal compound (metal silicide layer 41A) and a metal layer 41B (optional, as it may become the metal silicide layer 41A after complete reaction). The metal silicide layer 41A is buried in the second semiconductor layer 44, and the metal layer 41B is located on the metal silicide layer 41A. In one example, the metal layer 41B (material such as nickel) and the second semiconductor layer 44 (material such as amorphous silicon or polycrystalline silicon) can partially or completely react to form the metal silicide layer 41A through a thermal reaction (<300°C). This is achieved by the volume reduction of the metal silicide during the formation process and the selectivity of the material. For example, a preferred embodiment of the present invention uses nickel and silicon as a pair of materials. Nickel and a protective layer 60 (such as silicon oxide or silicon nitride) do not react at a temperature below 300 degrees C. Therefore, nickel (metal layer 41B) will react toward the second semiconductor layer 44 and reduce the volume of nickel (metal layer 41B). Therefore, the nanogap between nickel (metal layer 41B) and the protective layer 60 begins to form and slowly increases from zero. By controlling the material thickness, reaction temperature and time, nickel (metal layer 41B) can be completely reacted or partially reacted. Therefore, the nanogap 43 of this embodiment is generated after the semiconductor metal compound is formed. In other words, the nanogap 43 is directly adjacent to the metal layer 41B below it, and the metal layer 41B is directly adjacent to the metal silicide layer 41A (since other semiconductor materials can be used, it can be a semiconductor metal compound in other embodiments); or, when the metal layer 41B completely reacts with the second semiconductor layer 44 and completely becomes a semiconductor metal compound, the nanogap 43 is directly adjacent to the semiconductor metal compound below it. Therefore, the nanogap 43 is adjacent to the semiconductor metal compound through the metal layer 41B of the first electrode 41, or directly adjacent to the semiconductor metal compound. The gap under the protective layer can be accurately controlled within a predetermined nanometer range. For example, the thickness of the nickel film made by semiconductor physical vapor deposition (PVD) can be 100nm or 50nm, and the gap formed is of the same order of magnitude. This method can truly achieve the advantages mentioned above. It can obtain a large electric field to drive a piezoelectric d33-like vibration device using only a small operating voltage (<12V).

[0086] Therefore, the piezoelectric d33-like vibration device 100 further includes the aforementioned protective layer 60 and an insulating layer 70. The protective layer 60 covers the drain 32, the source 33, the first semiconductor layer 34 and the second semiconductor layer 44. The nanogap 43 is surrounded by the protective layer 60 and the first electrode 41, and the second electrode 42 is located on the protective layer 60. The insulating layer 70 covers the gate 31 and the substrate 10, and supports the first semiconductor layer 34 and the second semiconductor layer 44. At this point, those skilled in the art can understand that the device of the present invention can complete the production of a piezoelectric d33-like vibration device by using temperatures and materials that are compatible with the TFT process and only adding a silicide metal process (the preferred embodiment of the metal is Ni, but not limited to this). This is not only a major advantage in terms of integration, but also a major advantage in terms of cost and performance. Of course, only part of the TFT process and structure are used to illustrate this. Others, such as the ITO electrode in the back section, such as OLED or LCD materials or other display materials and structure production, etc., are not the purpose of the present invention and are therefore ignored here. However, any process adjustment or material change, whether it is current technology or future new technology, will not change or affect the spirit of the present invention.

[0087] In one example, the first electrodes 41 of the transceiver units 40 are directly or indirectly electrically connected together through the second semiconductor layer 44 and the first semiconductor layer 34 to serve as an integrally formed common electrode. In another example, a plurality of second electrodes 42 may also be electrically connected together to serve as a common electrode.

[0088] Figures 6A to 6G show Figure 5 A schematic diagram of the structure cross section of each step of the manufacturing method of the piezoelectric d33-like vibration device. Fig. 6A As shown, a portion of the transistor 30 is first formed on the left side of the substrate 10, and some materials required for forming the transistor 30 are reserved on the right side, such as the insulating layer 70 (oxide or nitride or a stack or other materials), the second semiconductor layer 44 and the first semiconductor layer 34. At this time, the second semiconductor layer 44 and the first semiconductor layer 34 are the same layer, such as an amorphous silicon or polysilicon layer, which is an important material layer of the transistor 30.

[0089] Then, if Figure 6B As shown in FIG. 8 , a photoresist layer 81 is covered on the second semiconductor layer 44, the drain electrode 32 and the source electrode 33. Figure 6C As shown in FIG. 8 , the photoresist layer 81 is patterned to form an opening 82. Then, as shown in FIG. Fig.6D As shown in Figure 6C A metal layer 83 is formed on the entire structure, and its material is, for example, nickel. The metal layer 83 fills the opening 82 and also covers the photoresist layer 81. Fig. 6EAs shown, the photoresist layer 81 is removed, and a portion of the metal layer 83 is retained. In this embodiment, a lift-off method is used to form a portion of the metal layer 83, but the present invention is not limited thereto, and other methods such as etching or photolithography may also be used to form a portion of the metal layer 83. Then, as shown in FIG. Fig. 6F As shown in FIG. 8 , a protective layer 60 is formed on the second semiconductor layer 44, the drain 32, the source 33 and the metal layer 83. Figure 6G As shown, Fig. 6F The whole structure is moved to a baking furnace at a temperature of about 250°C or above, so that the metal layer 83 and the second semiconductor layer 44 can be thermally reacted to form a metal silicide layer 41A, while retaining part of the metal layer 83 to form a metal layer 41B. The height of the nanogap 43 can be controlled by controlling the thickness of the metal layer 83, for example, 100nm. The nanogap 43 is a vacuum or nearly vacuum closed chamber formed by one or more thermal reactions of metal materials and semiconductor materials. Due to the thermal reaction to form the metal silicide layer 41A, the volume of the metal layer 83 is reduced to form a nanogap 43, the height of which can be controlled to be quite small, for example, tens of nanometers, so that the electric field generated when a driving voltage of 3.3 to 12 volts is applied to the first electrode 41 and the second electrode 42 is equivalent to the electric field generated by applying a driving voltage of tens to hundreds of volts to the conventional structure. Driven by the electric field, the second electrode 42 will vibrate up and down and emit vibration waves, and then receive the vibration waves reflected back by the object. Then, as Figure 5 As shown, a second electrode 42 is formed on the protective layer 60. The material of the second electrode 42 is, for example, an indium tin oxide (ITO) conductor, which can be integrated with the display. Of course, it can also be other materials, such as aluminum. It is worth noting that it can also be prior to Fig. 6F The second electrode 42 is formed on the substrate, and then a thermal reaction is performed without affecting the effect of the present embodiment. That is, the formation order of the metal silicide is flexible and is determined by the requirements of the manufacturing process without affecting the results of the present invention.

[0090] In this example, a process compatible with amorphous silicon TFTs can be used, with a process temperature less than 350°C (the temperature of growing amorphous silicon may reach 350°C, and the subsequent process temperature is only about 100 to 200°C), or a process compatible with low temperature polycrystalline silicon (LTPS) TFTs can be used, with a process temperature of 500 to 600°C. The effect of the present invention can be achieved by using the existing amorphous silicon or polycrystalline silicon in the TFT as a reserved layer to thermally react and combine with the metal layer to form a nanogap. Of course, the manufacturing method and structure of the present invention can also be integrated into, for example, the back end of a CMOS process.

[0091] Figure 7show Figure 4 A partial cross-sectional view of another example of a piezoelectric d33-like vibration device. Figure 7 As shown, this example is similar to Figure 5 The difference is Figure 5 It is a bottom-gate thin film transistor. Figure 7 It is a top-gate thin film transistor, which is also an implementable solution, so the drain 32 and the source 33 are formed on the substrate 10. Figure 7 As shown, the protective layer 60 of the piezoelectric d33 vibration device 100 covers the gate 31, the first semiconductor layer 34 and the second semiconductor layer 44, the nanogap 43 is surrounded by the protective layer 60 and the first electrode 41, the second electrode 42 is located on the protective layer 60, and the insulating layer 70 is located between the gate 31 and the second semiconductor layer 44.

[0092] Figures 7A to 7G show Figure 7 The structural cross-sectional diagram of each step of the manufacturing method of the piezoelectric d33-like vibration device. The manufacturing method is also similar to Figures 6A to 6G .like Fig. 7A As shown, a portion of the transistor 30 is first formed on the left side of the substrate 10, and some materials required for forming the transistor 30 are reserved on the right side, such as the insulating layer 70 (oxide or nitride), the second semiconductor layer 44 and the first semiconductor layer 34. At this time, the second semiconductor layer 44 and the first semiconductor layer 34 are the same layer, such as an amorphous silicon layer, a polysilicon layer or a germanium (Ge) layer, which is an important material layer of the transistor 30.

[0093] Then, if Figure 7B As shown in FIG. 4 , a photoresist layer 81 is covered on the second semiconductor layer 44, the insulating layer 70 and the gate 31. Figure 7C As shown in FIG. 8 , the photoresist layer 81 is patterned to form an opening 82. Then, as shown in FIG. Fig.7D As shown in Figure 7C A metal layer 83 is formed on the entire structure, and its material is, for example, nickel (Ni), titanium (Ti), tungsten (W), etc. The metal layer 83 fills the opening 82 and also covers the photoresist layer 81. Fig. 7E As shown in FIG. 8 , the photoresist layer 81 is removed, and a portion of the metal layer 83 is retained. Then, as shown in FIG. Figure 7F As shown in FIG. 1 , a protective layer 60 is formed on the second semiconductor layer 44, the first semiconductor layer 34, the insulating layer 70, the gate 31 and the metal layer 83. Figure 7G As shown, Figure 7FThe whole structure is moved to a baking oven at a temperature of about 250°C or above, so that the metal layer 83 and the second semiconductor layer 44 can be thermally reacted to form a metal silicide layer 41A, while a portion of the metal layer 83 is retained to form a metal layer 41B. Figure 7 As shown, a second electrode 42 is formed on the protective layer 60. The material of the second electrode 42 is, for example, an indium tin oxide (ITO) conductor, which can be integrated with the display. Of course, it can also be other materials, such as aluminum. It is worth noting that it can also be prior to Figure 7F The second electrode 42 is formed on the substrate, and then a thermal reaction is performed without affecting the effect of the present embodiment. That is, the formation order of the metal silicide is flexible and is determined by the requirements of the manufacturing process, and will not affect the results of the present invention.

[0094] Figure 8 A schematic diagram showing another application of the piezoelectric d33-like vibration device 100 according to a preferred embodiment of the present invention. Figure 8 As shown, the piezoelectric d33-like vibration device 100 can also be used to sense the image or blood flow information of the vein VI of the finger F, which can be achieved by the time of flight (TOF) sensing method, combined with the aforementioned Figure 4 In the implementation of fingerprint sensing, the present invention can further combine the two, using the same device to simultaneously sense fingerprints and finger veins, and even measure blood flow rate and heart rate.

[0095] Fig. 9 A schematic diagram showing the integration of the piezoelectric d33-like vibration device of the present invention into the CMOS back-end process. That is, the transistors and circuits of the front-end process are manufactured first, and then the back-end transceiver unit is manufactured. Fig. 9 The piezoelectric d33 vibration device 100 of the present embodiment at least includes a body 110, a first electrode 41, a second electrode 42 and a nano-gap 43.

[0096] The first electrode 41 is located in the body 110. The second electrode 42 is located in the body 110 and corresponds to the first electrode 41. At least one of the first electrode 41 and the second electrode 42 includes a compound formed by a reaction of a metal material and a semiconductor material. The nanogap 43 is formed in the body 110 and is located between the first electrode 41 and the second electrode 42. Since the nanogap 43 is formed by a metal material and a semiconductor material through one or more thermal reactions and has a nanometer scale, it is called a nanogap. The detailed formation method and advantages have been described above.

[0097] The body 110 includes a substrate 111 (equivalent to Figure 5 A substrate 10), a first insulating layer 112 (equivalent to Figure 5 The insulating layer 70, or a dielectric layer group, is composed of a plurality of metal connection layers and a plurality of dielectric layers disposed between the metal connection layers), a semiconductor material layer 113 (equivalent to Figure 5 a second semiconductor layer 44), a second insulating layer 114 and a protective layer 115 (the elements 114 and 115 are equivalent to Figure 5 The semiconductor material layer 113 includes the aforementioned semiconductor material.

[0098] The first insulating layer 112 is located on the substrate 111. The semiconductor material layer 113 is located on the first insulating layer 112, and the first electrode 41 is located on the semiconductor material layer 113. The second insulating layer 114 and the first electrode 41 together define a nano-gap 43, and the second electrode 42 is located on the second insulating layer 114. The protective layer 115 covers the second insulating layer 114 and the second electrode 42.

[0099] The first electrode 41 includes a metal silicide layer 41A and a metal layer 41B. The metal layer 41B may include the aforementioned metal material. The metal silicide layer 41A is located on the semiconductor material layer 113. The metal layer 41B is adjacent to the nano-gap 43 and is located on the metal silicide layer 41A. The metal layer 41B and the semiconductor material layer 113 form the metal silicide layer 41A after thermal reaction.

[0100] In this embodiment, the first electrode 41 includes a metal conductor, such as nickel (Ni), titanium (Ti), tungsten (W), etc. The material of the second electrode 42 can be the same metal conductor as the first electrode or a low-resistance semiconductor or a polymer conductor, etc., and the semiconductor material layer 113 is a polycrystalline silicon or an amorphous silicon layer, or other semiconductor material layers, such as a germanium (Ge) layer.

[0101] The first insulating layer 112 is located on the substrate 111. It is worth noting that the first insulating layer 112 can be a multi-layer structure. In the composition structure of a general integrated circuit, it can be a conductor layer (such as a metal layer) formed by the back-end process, a dielectric layer between the conductor layers, and a plug conductor (via conductor) between the conductor layers. Since this technology is a conventional technology, it is not described here. Of course, the first insulating layer 112 can also include a circuit composed of multiple dielectric layers and multiple metal connection layers, which cooperates with the active circuit elements and passive circuit elements in the silicon substrate 111 to form a group of integrated circuits 112A with a specific function. Therefore, the embodiment of the present invention can also include a group of integrated circuits 112A, which are located at the bottom or side of the vibration device and are electrically connected to the first electrode 41 and the second electrode 42 for signal processing.

[0102] The semiconductor material layer 113 is located on the first insulating layer 112. The metal silicide layer 41A is formed in the semiconductor material layer 113. The metal layer 41B is located on the semiconductor material layer 113 and is connected to and corresponds to the metal silicide layer 41A. Through photolithography, the semiconductor material layer 113, the metal layer 41B and the metal silicide layer 41A only occupy a portion of the area of ​​the first insulating layer 112, so the second insulating layer 114 can also be located on a portion of the first insulating layer 112. Therefore, through the sealing of the surroundings and the upper and lower surfaces, a nano gap 43 is formed, and the formation characteristics of this gap will be described later. At the same time, it is worth noting that the metal layer 41B originally occupied the entire volume of the nano gap 43, because it reacted with the underlying semiconductor material layer 113 at high temperature to form a compound and consumed part of the volume, thereby forming the nano gap 43.

[0103] The nanogap 43 is located between the second insulating layer 114 and the metal layer 41B, and the second insulating layer 114 may or may not be there in between. The second electrode 42 is located on the second insulating layer 114, and corresponds to the nanogap 43 and the metal layer 41B. The protective layer 115 is located on the second electrode 42 and the second insulating layer 114. The surface of the protective layer 115 can therefore be touched by an object. The protective layer 115 may also be an insulating layer structure with multiple layers, and conductive materials may be added thereto due to system design requirements, such as electrostatic protection requirements. Therefore, the top surface of the protective layer 115 can be touched by an object that can input multiple messages to it. Of course, if the second electrode 42 is not affected by environmental interference, such as not being exposed to corrosion, the protective layer 115 of this embodiment may also be unnecessary. Therefore, the transceiver unit further comprises: a dielectric layer group 112, located between the substrate 111 and the first electrode 41, the substrate 111 and the dielectric layer group 112 together form an integrated circuit 112A, electrically connected to the first electrode 41 and the second electrode 42; a second insulating layer 114, located between the nano-gap 43 and the second electrode 42; and a protective layer 115, covering the second electrode 42. It is worth noting that the protective layer 115 is not a necessary element, so it can also be omitted.

[0104] In the above embodiment, a glass substrate or a flexible substrate can be used, which has a much lower cost than a semiconductor substrate and is easy to integrate with the manufacturing process of a mobile phone display. The piezoelectric d33-like vibration device 100 can be used to sense biometric information such as gestures, fingerprints, finger veins, or non-biological information (industrial applications). In the case of a fingerprint sensor, the integrated transceivers 20 are arranged in a two-dimensional array with a pitch of approximately 50 to 70 microns. The piezoelectric d33-like vibration device 100 can be an independent device or can be integrated with a display to become a part of the display.

[0105] Figures 9A to 9C show Fig. 9 Schematic diagram of several variations of . Fig.9A As shown, this variation is similar to Fig. 9 , the difference is that the dielectric layer group 112 has a plurality of metal plugs 112B, such as copper plugs or tungsten plugs (of course not limited to this), which are arranged between the first electrode 41 and the integrated circuit 112A, and electrically connect the first electrode 41 to the integrated circuit 112A. The integrated circuit 112A has the aforementioned at least one transistor electrically connected to the transceiver unit, which is arranged on or in the substrate 111. The substrate 111 is, for example, a silicon substrate used for CMOS elements, and is of course not limited to a silicon semiconductor substrate or a CMOS element. It is worth noting that the dielectric layer group 112 and the metal connection layer can also achieve an electrical connection function through other metal plugs (not shown). As Fig. 9B As shown, this embodiment is similar to Fig.9A , the difference lies in the formation method of the second electrode 42. Fig. 9B In the process, after the second insulating layer 114 is completed, the second insulating layer 114 is subjected to a planarization process such as chemical mechanical polishing (CMP), and then an insulating layer 410 is formed on the prepared silicon wafer (single crystal silicon) 400, and then a polysilicon layer (42) is formed on the insulating layer 410, and the polysilicon layer (42) is bonded to the second insulating layer 114. In one example, the second insulating layer 114 is, for example, a silicon oxide layer that has been subjected to chemical mechanical polishing as an interface layer for fusion bonding. The second insulating layer 114 and another single crystal silicon wafer form an interface with hydrogen bond strength through low temperature fusion bonding. Of course, before low temperature bonding, in order to achieve surface activation, a surface plasma treatment can be performed, such as exposure to a plasma environment of oxygen (O2) and nitrogen (N2), and in order to make the bonding surface have a good flatness, the surface to be bonded can be polished and leveled by (CMP). Next, the silicon wafer 400 is thinned, and the remaining silicon wafer 400 is etched to expose the insulating layer 410, and then the insulating layer 410 is removed (or may not be removed) to expose the polysilicon layer (42), and the polysilicon layer (42) is patterned to form the second electrode 42. Finally, Fig.9A The protective layer 115 is shown (this protective layer can also be the aforementioned insulating layer 410). It is worth noting that the aforementioned polysilicon layer (42) can also be replaced by another single crystal silicon wafer, and the process used is the known Silicon On Insulator (SOI) process, which will not be described in detail here.

[0106] like Fig. 9CAs shown, this embodiment is similar to Fig.9A , the difference lies in the formation method of the second electrode 42. Fig. 9C In the process, after the second insulating layer 114 is completed, the second insulating layer 114 is planarized by a process such as CMP, and then the prepared silicon wafer (single crystal silicon) 400 is bonded to the second insulating layer 114 (similar to the above-mentioned fusion bonding). Of course, polymer bonding technology or other metal fusion bonding technology (eutectic bonding) can also be used. Then, the silicon wafer 400 is thinned to form the second electrode 42. Finally, the Fig.9A A protective layer 115 is shown.

[0107] Figures 10A to 10D Schematic diagrams showing top views of four examples of receiver and transmitter layouts. Fig. 10A As shown, the transceiver unit 40 disposed on the substrate 10 is used as a transmitter 40T and a receiver 40R at different time points. The transceiver units 40 are arranged in a two-dimensional array, and transistors (not shown) are arranged beside or below the transceiver units 40. This arrangement is suitable for Figure 5 , Figure 7 etc. Fig. 10B As shown, a transmitter 40T and eight receivers 40R are arranged on the substrate 10. After the transmitter 40T emits a vibration wave, the receiver 40R receives the vibration wave. This arrangement is suitable for Figure 5 , Figure 7 etc. Fig. 10C As shown, the multiple transmitters 40T and the multiple receivers 40R are arranged on the substrate 10 in an interactive manner. After the transmitters 40T emit vibration waves, the receivers 40R receive the vibration waves. This arrangement is suitable for Figure 5 , Figure 7 etc. Fig. 10D As shown, the multiple receivers 40R disposed on the substrate 10 are arranged in a two-dimensional array, and the transmitter 40T is a single large-area transmitter, which can be disposed on the lower surface of the substrate 10 or the part of the display module above the substrate 10. After the transmitter 40T emits the vibration wave, the receiver 40R receives the vibration wave. It is worth noting that Figures 10A to 10D This is only for the purpose of illustrating the design of different embodiments, and is not intended to limit the scope of the invention to such a geometric arrangement. Any geometric size and number of transmitters 40T and receivers 40R planning do not depart from the spirit of the present invention.

[0108] Fig.11 A partial cross-sectional diagram showing an integrated transceiver with two nanogaps of different heights. Fig.11 As shown, this embodiment is applicable to Fig. 10B and 10C, and similar to Figure 7 Examples of Figure 4 and Fig.11 As shown, the piezoelectric d33-like vibration device 100 further includes a transmitter 40T, which is electrically connected to the transistors 30. After the transistors 30 control the transmitter 40T to emit the first vibration wave W1 at a first time point, the receivers 40R are controlled to receive the second vibration wave W2 at a second time point. In addition, the transmitter 40T has a first electrode 41, a second electrode 42, and a second nanogap 43' formed between the first electrode 41 and the second electrode 42 and formed by a semiconductor metal compound (or another semiconductor metal compound in other embodiments). The transmitter 40T and the receiver 40R are disposed on the substrate 10, each transistor 30 is disposed on or in the substrate 10, and the height of the second nanogap 43' is greater than the height of each of the nanogaps 43. For the sensing sensitivity of the receiver 40R, the nanogap 43 should be as small as possible. For example, when the nanogap 43 is very small, the amplitude of the second electrode 42 can easily reach one tenth of the nanogap 43, so that a 3.3V voltage reflects a signal of 330mV. This is a very large signal for integrated circuit design. For the signal strength of the transmitter 40T, the second nanogap 43' should be as large as possible (the gap height is optimized according to the usage specifications). Therefore, by designing the second nanogap 43' to be larger than the nanogap 43, the performance of the vibration device can be improved. As long as the corresponding metal layer 41B (e.g. Fig. 6F The second nanogap 43' can be enlarged by increasing the thickness of the metal layer 83 or the thickness of the polysilicon or amorphous silicon layer of the second semiconductor layer 44.

[0109] Fig.12 Displays the corresponding Fig. 10D Schematic diagram of the transmitter configuration. Fig.12 Similar to Figure 4 , these receivers 40R are disposed on an upper surface 10T of the substrate 10, and each transistor 30 is disposed on or in the substrate 10. The difference is that the transmitter 40T is different from the receiver 40R. The transmitter 40T is a piezoelectric transmitter, which is disposed on a lower surface 10B of the substrate 10 or above the receiver 40R (disposed on the lower surface of a display 260 (it can also be disposed on the upper surface of the display 260, in the display 260 or other appropriate positions)). In this way, the function of signal sensing can also be achieved.

[0110] Fig.13A and 13B Schematic diagrams showing two examples of displays using the above-mentioned transceiver. Fig.13A , Fig. 13B and Figure 4As shown, a display 260 includes at least a substrate 10, a plurality of integrated transceivers 20, and a plurality of display units 90. The display 260 is, for example, Figure 2A and 2B The display 210 is provided. The substrate 10 is a rigid substrate (glass rigid OLED, LCD, etc.), a flexible substrate (flexible OLED) or a transparent substrate. The display 260 includes but is not limited to OLED, TFT-LCD, MICROLED display, etc. A plurality of integrated transceivers 20 are located on the substrate 10. Each integrated transceiver 20 includes a transceiver unit 40 and at least one transistor 30 (defined as a transceiver control transistor in the patent application) electrically connected together.

[0111] The transistor 30 controls the transmission and reception of the transceiver unit 40, so that the transceiver unit 40 transmits a first vibration wave W1 to an object F, and the object F reflects the first vibration wave W1 to generate a second vibration wave W2. The transceiver unit 40 receives the second vibration wave W2 to generate a sensing signal. A plurality of display units 90 are located on the substrate 10, and each display unit 90 includes at least one display control transistor 91 and a display pixel 92 electrically connected together. The display control transistor 91 controls the enablement and disablement of the display pixel 92, so that the display pixel 92 displays a light signal or does not display a light signal to display data.

[0112] From the perspective of layering, the display further includes a transistor configuration layer 93 and a display pixel configuration layer 94. The transistor configuration layer 93 is located on the substrate 10. The transistor 30 and the transceiver unit 40 are located in the transistor configuration layer 93. The display pixel configuration layer 94 is located on the transistor configuration layer 93. The display pixel 92 is located in the display pixel configuration layer 94. Therefore, transistors for controlling the display pixel 92 and the transceiver unit 40 are formed in the transistor configuration layer 93. In addition, the display pixel configuration layer 94 is a light-emitting layer (for example, in the case of an OLED display) or an optical switch layer (for example, in the case of an LCD display). In another example, two electrode layers (anode layer and cathode layer, not shown) can be respectively configured above and below the display pixel configuration layer 94, and at least one light-transmitting layer (not shown) can be configured above the display pixel configuration layer 94 for display purposes, and of course a touch layer can also be configured to provide a touch function. Technicians familiar with displays should understand that the embodiments of the present invention focus on the innovation of the transceiver unit and its superiority in integration with the display manufacturing process, and are not intended to teach how to make a display. Therefore, the description of the display is limited to a simple description. Instead, the focus is on how the device of the present invention can be integrated with the display in a geometric configuration to complete an integrated display that has both the display function and the device of the present invention.

[0113] Fig.13A and Fig. 13B Similar, but different in that Fig.13A In the configuration, each transceiver unit 40 is located outside the coverage area (rectangular area) of each display unit 90 (that is, the transceiver unit does not overlap the area of ​​the display unit). Fig. 13B In the configuration, each transceiver unit 40 is located within the coverage area (rectangular area) of each display unit 90 (i.e., the area where the transceiver unit overlaps part or all of the display unit). Accordingly, the transceiver can be integrated into the display to achieve the functions of display and sensing at the same time.

[0114] like Fig.14 As shown, the transmitter 40T is a piezoelectric transmitter, which may be a piezoelectric structure with a whole layer, or may have one or more separate transmitting units, which are arranged on or above one or more receivers 40R. That is, the transmitter 40T is arranged on or above one or more receivers 40R. When implemented as a single transmitting unit, the transmitter 40T may also be arranged on or above the transistor 30. The piezoelectric transmitter includes a piezoelectric block or a piezoelectric film, and the materials constituting the piezoelectric transmitter include but are not limited to PVDF, PZT, zinc oxide, aluminum nitride, etc. Figure 5 In terms of application, a protective layer or other appropriate structure may be formed on the second electrode 42 and the protective layer 60, and then a bottom electrode, a piezoelectric material, and a top electrode may be formed in sequence, so that a piezoelectric transmitter may be used to transmit vibration waves or signals; or the second electrode 42 may also be used as the bottom electrode of the piezoelectric transmitter, and then a piezoelectric material 42A and a top electrode 42B may be formed in sequence, that is, the transmitter and one or more receivers may share the same second electrode 42 for transmission and reception, such as Fig.15 shown.

[0115] The piezoelectric d33-like vibration device of the above-mentioned embodiment has the following advantages: (1) there is no material restriction, and piezoelectric materials do not need to be used, and the range of applicable substrate materials is also wide; (2) it is easy to integrate with standard processes; (3) a large-area transceiver device can be completed by a low-temperature process; (4) a nanogap is used, so a relatively low driving voltage can be used; (5) there is no need to use a sacrificial layer to complete it, so all the walls of the nanogap are free of any holes and filling materials; (6) the materials used in the process are non-polluting to semiconductor devices; and (7) the transmitter and the receiver can have different nanogaps, which increases the amplitude of the signal emitted by the transmitter and increases the sensing sensitivity of the receiver.

[0116] The above are preferred embodiments of the present invention and the technical principles used therein. For those skilled in the art, any obvious changes such as equivalent transformations, simple replacements, etc. based on the technical solution of the present invention, without departing from the spirit and scope of the present invention, are within the scope of protection of the present invention.

Claims

1. A piezoelectric d33-like vibration device, characterized in that: At least: substrate; a transistor, wherein the transistor is disposed on or in the substrate; A receiver, disposed on the substrate and electrically connected to the transistor, the transistor controlling the receiver to receive, wherein the receiver has a first electrode, a second electrode, and a nano-gap between the first electrode and the second electrode and formed by a semiconductor material and a metal material undergoing a thermal reaction to form a semiconductor metal compound, wherein the first electrode of the receiver includes a metal layer and the semiconductor metal compound adjacent to the metal layer, so as to provide a capacitive sensing electrode to sense a capacitance change between the second electrode and the receiver to obtain a sensing signal; as well as A dielectric layer group is located between the substrate and the first electrode, wherein the integrated circuit including the transistor is located below the first electrode, wherein the nanogap is adjacent to the metal layer of the first electrode, and a plurality of metal plugs are arranged between the semiconductor metal compound of the first electrode and the integrated circuit, and the metal plugs electrically connect the metal layer of the first electrode to the integrated circuit through the semiconductor metal compound.

2. The piezoelectric d33-like vibration device as claimed in claim 1, characterized in that: The receiver is further used as a transmitter and as a transceiver unit. The transceiver unit and the transistor form an integrated transceiver. In each of the integrated transceivers, the transistor controls the transceiver unit to transmit a first oscillation wave at a first time point, and then controls the transceiver unit to receive a second oscillation wave at a second time point.

3. The piezoelectric d33-like vibration device as claimed in claim 2, characterized in that: The transistor has a gate, a drain, a source and a first semiconductor layer located between the gate, the drain and the source.

4. The piezoelectric d33-like vibration device as claimed in claim 2, characterized in that: The transceiver unit further has a second semiconductor layer located between the substrate and the first electrode.

5. The piezoelectric d33-like vibration device as claimed in claim 2, characterized in that: The transistor has a gate, a drain, a source and a first semiconductor layer located between the gate, the drain and the source; The transceiver unit further has a second semiconductor layer located between the substrate and the first electrode; and The first semiconductor layer and the second semiconductor layer are made of different materials.

6. The piezoelectric d33-like vibration device as claimed in claim 2, characterized in that: A height of the nanogap is less than or equal to 200 nanometers.

7. The piezoelectric d33-like vibration device as claimed in claim 2, characterized in that: The device further includes a driving sensing circuit module electrically connected to the integrated transceiver and providing a driving voltage of 3.3 to 12 volts to the integrated transceiver.

8. The piezoelectric d33-like vibration device as claimed in claim 2, characterized in that: The semiconductor metal compound is a metal silicide layer.

9. The piezoelectric d33-like vibration device as claimed in claim 2, characterized in that: The device further comprises a protection layer, wherein the nano-gap is surrounded by the protection layer and the first electrode, and the second electrode is located on the protection layer.

10. The piezoelectric d33-like vibration device as claimed in claim 2, characterized in that: The substrate is a glass substrate, a flexible substrate or a semiconductor substrate with an insulating layer formed thereon.

11. The piezoelectric d33-like vibration device as claimed in claim 2, characterized in that: Integrated into a display or combined under the display.

12. The piezoelectric d33-like vibration device as claimed in claim 2, characterized in that: This type of piezoelectric d33 vibration device includes multiple integrated transceivers, and the phase differences of the first vibration waves of the transceiver units are controlled at the same time. Through beam forming, the energy is concentrated and scanned in sequence to maximize the energy of each first vibration wave, thereby increasing the sensitivity of sensing.

13. The piezoelectric d33-like vibration device as claimed in claim 2, characterized in that: It can provide biometric sensing, 3D touch and gesture detection functions at the same time.

14. The piezoelectric d33-like vibration device as claimed in claim 2, characterized in that: It is a variable frequency transceiver that senses the depth information of different features of an object.

15. The piezoelectric d33-like vibration device as claimed in claim 2, characterized in that: All the peripheral walls of the nano-gap are free of any holes or filling materials.

16. The piezoelectric d33-like vibration device as claimed in claim 2, characterized in that: The transceiver unit also has: A second insulating layer is located between the nano-gap and the second electrode, wherein the substrate and the dielectric layer group together form the integrated circuit, and the integrated circuit is electrically connected to the first electrode and the second electrode.

17. The piezoelectric d33-like vibration device as claimed in claim 2, characterized in that: The material of the second electrode is single crystal silicon, polycrystalline silicon or amorphous silicon.

18. The piezoelectric d33-like vibration device as claimed in claim 1, characterized in that: The invention further comprises: a transmitter electrically connected to the transistor, wherein the transistor controls the transmitter to transmit a first vibration wave at a first time point, and then controls the receivers to receive a second vibration wave at a second time point.

19. The piezoelectric d33-like vibration device as claimed in claim 18, characterized in that: The emitter has a first electrode, a second electrode and a second nanogap located between the first electrode and the second electrode of the emitter and formed by the semiconductor metal compound or another semiconductor metal compound.

20. The piezoelectric d33-like vibration device as claimed in claim 19, characterized in that: The transmitter and the receiver are arranged on the substrate, the transistor is arranged on or in the substrate, and the height of the second nanogap is greater than the height of each of the nanogaps.

21. The piezoelectric d33-like vibration device as claimed in claim 18, characterized in that: The receiver is arranged on an upper surface of the substrate, the transistor is arranged on or in the substrate, and the transmitter is a piezoelectric transmitter, which is arranged on a lower surface of the substrate or above the receiver.

22. The piezoelectric d33-like vibration device as claimed in claim 18, characterized in that: The transmitter is a piezoelectric transmitter, which is arranged on or above the receiver.

23. The piezoelectric d33-like vibration device as claimed in claim 22, characterized in that: The transmitter and the receiver share the second electrode for transmission and reception.

24. A display, characterized in that: At least: substrate; A plurality of transistors are disposed on or in the substrate; A plurality of receivers are disposed on the substrate and electrically connected to the transistors, each of which controls the corresponding receiver to receive, wherein each of the receivers has a first electrode, a second electrode, and a nano-gap between the first electrode and the second electrode and formed by a semiconductor material and a metal material undergoing a thermal reaction to form a semiconductor metal compound, wherein the first electrode of each of the receivers includes a metal layer and the semiconductor metal compound adjacent to the metal layer to provide a capacitive sensing electrode to sense a capacitance change with the second electrode to obtain a sensing signal; a dielectric layer group disposed between the substrate and the first electrode, wherein an integrated circuit including the transistors is disposed below the first electrode, wherein the nanogap is adjacent to the metal layer of the first electrode, and a plurality of metal plugs are disposed between the semiconductor metal compound of the first electrode and the integrated circuit, wherein the metal plugs electrically connect the metal layer of the first electrode to the integrated circuit through the semiconductor metal compound; as well as A plurality of display units, each of which comprises at least one display control transistor and a display pixel electrically connected together, wherein the display control transistor controls the enabling and disabling of the display pixel so that the display pixel displays a light signal or does not display a light signal to display data.

25. The display according to claim 24, characterized in that Each of the receivers is further used as a transmitter and as a transceiver unit. The transceiver unit and a corresponding one of the transistors form an integrated transceiver. In each of the integrated transceivers, the transistor controls the transceiver unit to transmit a first oscillation wave at a first time point, and then controls the transceiver unit to receive a second oscillation wave at a second time point.

26. The display according to claim 25, characterized in that Each of the integrated transceivers is located on the substrate. Each of the integrated transceivers includes the transceiver unit and at least one transceiver control transistor electrically connected together. The transceiver control transistor controls the transmission and reception of the transceiver unit.

27. The display according to claim 26, characterized in that Also includes: a transistor configuration layer, located on the substrate, wherein the transceiver control transistor and the transceiver unit are located in the transistor configuration layer; and A display pixel configuration layer is located on the transistor configuration layer, wherein the display pixel is located in the display pixel configuration layer.

28. The display according to claim 26, characterized in that Each of the transceiver units is located outside the coverage of each of the display units.

29. The display according to claim 26, characterized in that Each of the transceiver units is located within the coverage area of ​​each of the display units.

30. The display according to claim 27, characterized in that The display pixel configuration layer is a light emitting layer or a light switch layer.

31. The display according to claim 26, characterized in that The substrate is a hard substrate, a flexible substrate or a transparent substrate.

32. The display according to claim 24, characterized in that All the peripheral walls of the nano-gap are free of any holes or filling materials.

33. The display according to claim 24, characterized in that The invention further comprises: a transmitter electrically connected to the transistors, wherein the transistors control the transmitter to emit a first vibration wave at a first time point, and then control the receivers to receive a second vibration wave at a second time point.

34. The display according to claim 33, characterized in that The emitter has a first electrode, a second electrode and a second nanogap located between the first electrode and the second electrode of the emitter and formed by the semiconductor metal compound or another semiconductor metal compound.

35. The display according to claim 34, characterized in that The transmitter and the receivers are arranged on the substrate, each of the transistors is arranged on or in the substrate, and the height of the second nanogap is greater than the height of each of the nanogaps.

36. The display according to claim 35, characterized in that The receivers are arranged on an upper surface of the substrate, each of the transistors is arranged on or in the substrate, and the transmitter is a piezoelectric transmitter, which is arranged on a lower surface of the substrate or above the receivers.

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