Display device and method of manufacturing the same

Abstract

A display device and a method for manufacturing the same are provided. The display device includes: a substrate including a display area and a sensor area, the display area including primary pixels, the sensor area including secondary pixels and a transmissive portion; a first pixel electrode and a first emission layer located in each primary pixel; a second pixel electrode and a second emission layer located in each secondary pixel; a counter electrode integrally arranged in the display area and the sensor area; and a metal layer at least partially surrounding the transmissive portion, wherein the counter electrode has an opening corresponding to the transmissive portion.

Description

[0001] This application claims priority to and the benefit of Korean Patent Application No. 10-2019-0020494, filed on February 21, 2019, in the Korean Intellectual Property Office (KIPO), the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0002] One or more embodiments relate to a display device and a method of manufacturing the display device. Background Art

[0003] Display devices have been used for various purposes. In addition, as the thickness and weight of display devices have been reduced, the scope of utilization of display devices has increased.

[0004] According to the use of the display device, different methods of designing its shape have been developed, and more functions have been embedded in or linked to the display device. Summary of the Invention

[0005] Aspects of one or more embodiments are directed to a display device including a sensor area, in which a sensor and the like are arranged within the display area. However, the above technical features are exemplary and the scope of the present disclosure is not limited thereto.

[0006] Additional aspects of one or more embodiments will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the presented embodiments.

[0007] According to one or more embodiments, a display device includes: a substrate including a display area and a sensor area, wherein the display area includes a main pixel and the sensor area includes an auxiliary pixel and a transmissive portion; a first pixel electrode and a first emission layer located in each of the main pixels; a second pixel electrode and a second emission layer located in each of the auxiliary pixels; a counter electrode integrally arranged in the display area and the sensor area; and a metal layer at least partially surrounding the transmissive portion, wherein the counter electrode has an opening corresponding to the transmissive portion.

[0008] The display device may further include: an inorganic insulating layer on the substrate, wherein the inorganic insulating layer has a first hole corresponding to the transmission portion; and a counter electrode on a sidewall of the first hole.

[0009] The metal layer may be located in the first hole.

[0010] The opening in the counter electrode may have an area smaller than an area of ​​the first hole.

[0011] The display device may further include: a functional layer integrally arranged in the display area and the sensor area, the functional layer being located between the first pixel electrode and the counter electrode and having an opening corresponding to the transmissive portion, wherein the opening of the counter electrode and the opening of the functional layer may overlap each other and form a through hole.

[0012] The metal layer may include the same material as the first pixel electrode.

[0013] The metal layer may include a first metal layer surrounding the transmission portion and a second metal layer separated from the first metal layer, the second metal layer at least partially surrounding the first metal layer.

[0014] The metal layer may include a protrusion extending toward the transmissive portion.

[0015] The display device may further include: a lower electrode layer located in the sensor region, wherein the lower electrode layer may be located between the substrate and the auxiliary thin film transistor in the auxiliary pixel.

[0016] The metal layer may include the same material as the lower electrode layer.

[0017] The display device may further include an inorganic insulating layer on the substrate, wherein the inorganic insulating layer may have a first hole corresponding to the transmission portion, and the metal layer may have a width greater than a width of the first hole.

[0018] The display device may further include: a component located on the lower surface of the substrate, the component corresponding to the sensor area.

[0019] The substrate may further include an opening area surrounded by the display area, and the display device may further include an additional metal layer surrounding the opening area.

[0020] The substrate may have substrate holes corresponding to the open areas.

[0021] According to one or more aspects, a method for manufacturing a display device is provided. The display device includes a substrate having a display area and a sensor area, the display area including primary pixels, and the sensor area including secondary pixels and a transmissive portion. The method includes forming an initial metal layer on an upper surface of the substrate, the initial metal layer overlapping the transmissive portion; forming a counter electrode on the initial metal layer; irradiating the initial metal layer with a laser beam from a lower surface of the substrate; and peeling the laser-irradiated initial metal layer from the substrate, wherein the initial metal layer has a pattern located at its edge.

[0022] The initial metal layer may include a central portion and an edge portion separated from the central portion, the edge portion surrounding the central portion.

[0023] The central portion may be at least partially connected to the edge portion.

[0024] The edge portion may include a first edge portion and a second edge portion, the first edge portion being separated from the second edge portion.

[0025] The first edge portion may be at least partially connected to the central portion.

[0026] The laser beam may include infrared light. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] These and / or other aspects will become apparent and more readily understood from the following description of the embodiments, taken in conjunction with the accompanying drawings, in which:

[0028] Figure 1 is a perspective view of a display device according to an embodiment;

[0029] Figure 2 It is along Figure 1 A cross-sectional view of the display device taken along line AA';

[0030] Figure 3 is a plan view of a display device according to an embodiment;

[0031] Figure 4 It shows Figure 3 a plan view of a portion of a sensor area;

[0032] Figure 5A It is along Figure 3 Line I-I' and Figure 4 A cross-sectional view of the display device taken along line II-II';

[0033] Figure 5B yes Figure 5A an enlarged view of part III;

[0034] Figure 5C is a cross-sectional view of a display device according to an embodiment;

[0035] Figures 6A to 6C is a cross-sectional view illustrating a method of manufacturing a display device according to an embodiment;

[0036] 7A to 7E is a plan view of the shape of an initial metal layer applied to one or more embodiments;

[0037] Figures 8A to 8E is a plan view of the shape of a metal layer applied to an embodiment;

[0038] Figure 9 is a cross-sectional view of a display device according to an embodiment;

[0039] Figure 10A is a plan view of a display device according to an embodiment;

[0040] Figure 10B is a plan view of a display device according to an embodiment; and

[0041] Figure 11 It is along Figure 10A A cross-sectional view of the display device taken along line IV-IV' and line V-V'. DETAILED DESCRIPTION

[0042] Reference will now be made in detail to the embodiments, examples of which are shown in the accompanying drawings, wherein like reference numerals always denote like elements. In this regard, the present embodiments may have different forms and should not be construed as being limited to the description set forth herein. Therefore, the embodiments are described below with reference to the accompanying drawings only to illustrate aspects of the invention. As used herein, the term "and / or" includes any and all combinations of one or more of the relevant listed items. Expressions such as "at least one of...", when following a list of elements, modify the entire list of elements without modifying the individual elements in the list. In addition, when describing embodiments of the invention, the use of "may" refers to "one or more embodiments of the invention."

[0043] Since the present disclosure allows for various suitable changes and numerous embodiments, specific embodiments will be shown in the drawings and described in detail in the written description. Reference is made to the accompanying drawings that illustrate one or more embodiments to obtain a full understanding of the advantages thereof and the objectives achieved by the embodiments. However, the embodiments may have different forms and should not be construed as being limited to the description set forth herein.

[0044] Hereinafter, exemplary embodiments will be described in more detail with reference to the accompanying drawings. Components that are the same or correspond to each other are given the same reference numerals regardless of the figure numbers, and redundant explanations are omitted.

[0045] Although such terms as "first," "second," etc. may be used to describe various components, such components are not limited to the above terms. The above terms are only used to distinguish one component from another.

[0046] Unless an expression used in the singular has a clearly different meaning in the context, it includes expressions in the plural form.

[0047] In this specification, it will be understood that the terms "comprises", "has" and "includes" are intended to indicate the presence of the features, numbers, steps, actions, components, parts or combinations thereof disclosed in the specification, and are not intended to exclude the possibility that one or more other features, numbers, steps, actions, components, parts or combinations thereof may exist or may be added.

[0048] It will be understood that when a layer, region, or component is referred to as being “formed on” another layer, region, or component, it can be directly or indirectly formed on the other layer, region, or component. That is, for example, intervening layers, regions, or components may be present.

[0049] For the convenience of explanation, the sizes of the components in the drawings may be exaggerated. In other words, since the sizes and thicknesses of the components in the drawings are arbitrarily shown for the convenience of explanation, the following embodiments are not limited thereto.

[0050] When a certain embodiment can be implemented differently, a specific process order can be performed differently from the described order. For example, two consecutively described processes can be performed substantially simultaneously or in a reverse order from the described order.

[0051] In the following embodiments, when layers, regions, or elements are referred to as being "connected," it will be understood that they may be directly connected or intervening portions may exist between the layers, regions, or elements. For example, when layers, regions, or elements are referred to as being "electrically connected," they may be directly electrically connected or the layers, regions, or elements may be indirectly electrically connected with intervening portions present.

[0052] For ease of description, spatially relative terms such as "below," "above," etc. may be used herein to describe the relationship of one element or feature to another (other) element or feature as shown in the accompanying drawings. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the accompanying drawings. Furthermore, it will be understood that when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.

[0053] As used herein, the terms "substantially," "approximately," and similar terms are used as terms of approximation rather than terms of degree, and are intended to account for the inherent variations in measurements or calculations that would be recognized by those skilled in the art.

[0054] As used herein, the term "use" and variations thereof may be considered synonymous with the term "utilize" and variations thereof, respectively.

[0055] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the present disclosure belongs. It will also be understood that terms (such as those defined in general dictionaries) should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and / or this specification, and should not be interpreted in an idealized or overly formal sense unless expressly defined as such herein.

[0056] Figure 1 is a perspective view of a display device 1 according to the embodiment.

[0057] Reference Figure 1 The display device 1 includes a display area DA in which an image is displayed and a non-display area NDA in which no image is displayed. The display device 1 may provide a main image via light emitted from a plurality of main pixels Pm arranged in the display area DA.

[0058] The display device 1 may include a sensor area SA. The sensor area SA may be an area where components, such as sensors using infrared light, visible light, or sound, are arranged. The sensor area SA may include a transmissive portion TA through which light and / or sound output from the components to the outside or traveling from the outside to the components can be transmitted. In one or more embodiments, when infrared light is transmitted through the sensor area SA, the infrared light transmittance of the entire sensor area SA may be approximately 10% or greater, approximately 20% or greater, approximately 25% or greater, approximately 50% or greater, approximately 85% or greater, or approximately 90% or greater.

[0059] In one or more embodiments, a plurality of auxiliary pixels Pa may be arranged in the sensor area SA, and an image (e.g., a set image or a predetermined image) may be provided using light emitted from the plurality of auxiliary pixels Pa. The image provided by the sensor area SA is an auxiliary image having a resolution lower than that of the image provided by the display area DA. That is, the sensor area SA includes a transmissive portion TA through which light and / or sound can be transmitted. Therefore, the number of auxiliary pixels Pa per unit area may be less than the number of primary pixels Pm per unit area in the display area DA.

[0060] The sensor area SA may be at least partially surrounded by the display area DA, and in one or more embodiments, as shown in FIG. Figure 1 As shown in FIG, the sensor area SA is entirely surrounded by the display area DA.

[0061] In the following, according to the embodiment, the display device 1 is considered to be an organic light emitting display device, but the disclosed display device 1 is not limited thereto. In one or more embodiments, the display device 1 may be an inorganic light emitting display, a quantum dot light emitting display, etc.

[0062] Reference Figure 1 The sensor area SA is located in a portion (the upper right portion) of the rectangular display area DA, but is not limited thereto. The display area DA may have a circular shape, an elliptical shape, or a polygonal shape such as a triangle or a pentagon, and the position and / or number of the sensor areas SA may be modified in various suitable ways.

[0063] Figure 2 It is along Figure 1 1 is a cross-sectional view of the display device 1 according to one or more embodiments, taken along line AA′.

[0064] Reference Figure 2 The display device 1 may include a display panel 10 including a display element and a component 20 corresponding to the sensor area SA.

[0065] The display panel 10 may include a substrate 100, a display element layer 200 on the substrate 100, and a thin film encapsulation layer 300 as an encapsulation member for sealing the display element layer 200. In addition, the display panel 10 may further include a lower protective film 175 disposed below the substrate 100. In addition, the display panel 10 may further include an insulating layer IL' disposed between the substrate 100 and the display element layer 200.

[0066] The substrate 100 may include glass or a polymer resin. The substrate 100 including the polymer resin may be flexible, rollable, or bendable. The substrate 100 may have a multilayer structure including a layer including a polymer resin and / or an inorganic layer.

[0067] The display element layer 200 may include a circuit layer including a main thin film transistor TFT and an auxiliary thin film transistor TFT′, an organic light emitting diode OLED as a display element, and an insulating layer IL between the thin film transistors TFT and TFT′ and the organic light emitting diode OLED.

[0068] The main pixels Pm each including a main thin film transistor TFT and a main organic light emitting diode OLED connected to the main thin film transistor TFT are arranged in the display area DA, and the auxiliary pixels Pa each including an auxiliary thin film transistor TFT' and an auxiliary organic light emitting diode OLED' connected to the auxiliary thin film transistor TFT' and wiring can be arranged in the sensor area SA.

[0069] In addition, a transmissive portion TA in which the auxiliary thin film transistor TFT' and the display element are not arranged (e.g., not present) may be located in the sensor area SA. The transmissive portion TA may be understood as an area through which light / signals emitted from the component 20 or light / signals incident to the component 20 may be transmitted.

[0070] The component 20 may be located in the sensor area SA. The component 20 may be an electronic component that uses light or sound. For example, the component 20 may be a sensor for receiving light (e.g., an infrared light sensor), a sensor that outputs and senses light or sound to measure distance or to sense fingerprints, etc., a small lamp for emitting light, or a speaker for outputting sound. Electronic components that use light may use light in various suitable bands such as visible light, IR, ultraviolet (UV) light, etc. A plurality of components 20 may be arranged in the sensor area SA. For example, a light emitting device and a light receiving device may be provided in one sensor area SA as a component 20. Alternatively, one component 20 may include a light emitting portion and a light receiving portion.

[0071] The lower electrode layer BSM may be arranged in the sensor area SA, and the lower electrode layer BSM may correspond to the auxiliary pixel Pa. That is, the lower electrode layer BSM may be arranged to correspond to the lower portion of the auxiliary thin film transistor TFT'. The lower electrode layer BSM may prevent or partially block external light from reaching the auxiliary pixel Pa, including the auxiliary thin film transistor TFT', etc. For example, the lower electrode layer BSM may prevent or partially block light emitted from the component 20 from reaching the auxiliary pixel Pa. In addition, a constant voltage or signal is applied to the lower electrode layer BSM to prevent or reduce damage to the pixel circuit caused by electrostatic discharge.

[0072] The thin film encapsulation layer 300 may include at least one inorganic encapsulation layer and at least one organic encapsulation layer. Figure 2 , the thin film encapsulation layer 300 may include a first inorganic encapsulation layer 310 and a second inorganic encapsulation layer 330 , and an organic encapsulation layer 320 between the first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 , respectively.

[0073] The first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 may include one or more inorganic insulating materials selected from the group consisting of aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride. The organic encapsulation layer 320 may include a polymer material. The polymer material may include acrylic resin, epoxy resin, polyimide, polyethylene, and the like.

[0074] The lower protective film 175 is attached to the lower portion of the substrate 100 to protect and support the substrate 100. The lower protective film 175 may have an opening 175OP corresponding to the sensor area SA. Since the lower protective film 175 has the opening 175OP, the light transmittance of the sensor area SA can be improved. The lower protective film 175 may include polyethylene terephthalate (PET) or polyimide (PI).

[0075] The area of ​​the sensor region SA may be larger than the area of ​​the region where the component 20 is disposed. Therefore, the area of ​​the opening 175OP in the lower protective film 175 may not be equal to the area of ​​the sensor region SA. For example, the area of ​​the opening 175OP may be smaller than the area of ​​the sensor region SA.

[0076] In one or more embodiments, components such as an input sensing member for sensing a touch input, an anti-reflection member including a polarizer and a retarder or a color filter and a black matrix, a transparent window, etc. may also be disposed on the display panel 10 .

[0077] In addition, in one or more embodiments, the thin film encapsulation layer 300 is used as an encapsulation member for encapsulating the display element layer 200, but one or more embodiments are not limited thereto. For example, an encapsulation substrate bonded to the substrate 100 via a sealant or glass frit may be used as a member for encapsulating the display element layer 200.

[0078] Figure 3 is a plan view of the display panel 10 according to the embodiment.

[0079] Reference Figure 3 , the display panel 10 includes a plurality of primary pixels Pm in the display area DA. Each primary pixel Pm may include a display element such as an organic light emitting diode. Each primary pixel Pm may emit light (e.g., red light, green light, blue light, or white light) via an organic light emitting diode. In one or more embodiments, the primary pixel Pm may be understood as a pixel for emitting red light, green light, blue light, or white light as described above. The display area DA is referred to above. Figure 2 The described packaging member is covered to be protected from external air or moisture.

[0080] The sensor area SA may be arranged in the display area DA, and a plurality of auxiliary pixels Pa may be arranged in the sensor area SA. Each auxiliary pixel Pa may include a display element such as an organic light-emitting diode. Each auxiliary pixel Pa may emit light (e.g., red light, green light, blue light, or white light) via the organic light-emitting diode. In one or more embodiments, the auxiliary pixel Pa may be understood as a pixel that emits red light, green light, blue light, or white light as described above. In addition, the sensor area SA includes a transmissive portion TA between the auxiliary pixels Pa.

[0081] In one or more embodiments, a primary pixel Pm and a secondary pixel Pa may include the same pixel circuit (i.e., use the same pixel circuit). However, one or more embodiments are not limited thereto. That is, the pixel circuit included in the primary pixel Pm and the pixel circuit included in the secondary pixel Pa may be different from each other.

[0082] The sensor area SA includes the transmissive portion TA, and thus the resolution of the sensor area SA may be smaller than the resolution of the display area DA. For example, the resolution of the sensor area SA may be half the resolution of the display area DA. In one or more embodiments, the resolution of the display area DA may be 400 ppi or greater, and the resolution of the sensor area SA may be approximately 200 ppi or greater.

[0083] Each of the main pixel Pm and the auxiliary pixel Pa can be electrically connected to an external circuit arranged in the non-display area NDA. In the non-display area NDA, a first scan driving circuit 110, a second scan driving circuit 120, a terminal 140, a data driving circuit 150, a first power line 160, and a second power line 170 can be arranged.

[0084] The first scan driving circuit 110 may provide a scan signal to each pixel Pm or Pa via a scan line SL. The first scan driving circuit 110 may provide an emission control signal to each pixel Pm or Pa via an emission control line EL. The second scan driving circuit 120 may be arranged in parallel with the first scan driving circuit 110, with the display area DA arranged between the first scan driving circuit 110 and the second scan driving circuit 120. Some of the pixels Pm and Pa arranged in the display area DA may be electrically connected to the first scan driving circuit 110, and the other pixels may be electrically connected to the second scan driving circuit 120. In one or more embodiments, the second scan driving circuit 120 may be omitted.

[0085] The terminal 140 may be arranged at one side of the substrate 100. The terminal 140 may not be covered by an insulating layer (i.e., the terminal 140 may be exposed) and may be electrically connected to the printed circuit board PCB. The terminal PCB-P of the printed circuit board PCB may be electrically connected to the terminal 140 of the display panel 10. The printed circuit board PCB may transmit a signal or power of the controller to the display panel 10. The control signal generated by the controller may be transmitted to the first scan drive circuit 110 and the second scan drive circuit 120 respectively via the printed circuit board PCB. The controller may provide a first power voltage (ELVDD) and a second power voltage (ELVSS) to the first power line 160 and the second power line 170 respectively via the first connection line 161 and the second connection line 171. The first power voltage is supplied to each pixel Pm or Pa via the driving voltage line PL connected to the first power line 160, and the second power voltage may be provided to the counter electrode of each pixel Pm or Pa connected to the second power line 170.

[0086] The data driving circuit 150 is electrically connected to the data line DL. The data signal of the data driving circuit 150 may be supplied to each of the pixels Pm and Pa via the connection line 151 connected to the terminal 140 and the data line DL connected to the connection line 151. Figure 3 The embodiment in FIG. 1 shows that the data driving circuit 150 is disposed on the printed circuit board PCB, but in one or more embodiments, the data driving circuit 150 is disposed on the substrate 100. For example, the data driving circuit 150 may be disposed between the terminal 140 and the first power line 160.

[0087] The first power line 160 may include a first sub-line 162 and a second sub-line 163 extending parallel to each other along the x-direction with the display area DA interposed therebetween. The second power line 170 has a loop shape with an open side to partially surround the display area DA.

[0088] Figure 4 is partially shown Figure 3 A plan view of the sensor area SA, Figure 5A It is along Figure 3 Line I-I' and Figure 4 sectional view of the display device taken along line II-II'. Figure 5B yes Figure 5A Magnified view of part III.

[0089] Reference Figure 4 , the auxiliary pixel Pa and the transmission area (ie, transmission portion) TA are arranged in the sensor area SA of the display device according to the embodiment. A set (eg, predetermined) number of auxiliary pixels Pa may be continuously arranged to form a pixel group Pg. The pixel group Pg may include at least one auxiliary pixel Pa. Figure 4 In the embodiment, a pixel group Pg includes four auxiliary pixels Pa arranged in two columns (e.g., two auxiliary pixels Pa in each column). However, one or more embodiments are not limited thereto. The number of auxiliary pixels Pa in a pixel group Pg and the arrangement of the auxiliary pixels Pa may be modified in various suitable ways. For example, a pixel group Pg may include three auxiliary pixels Pa arranged in a row.

[0090] Because the display element is not arranged in the transmissive portion TA, the transmissive portion TA has high light transmittance, and multiple transmissive areas TA can be included in the sensor area SA. The transmissive areas TA can be arranged alternately with the pixel groups Pg along the first direction (x direction) and / or the second direction (y direction). Alternatively, the transmissive areas TA can be arranged to surround the pixel groups Pg. Alternatively, the auxiliary pixels Pa can be arranged to surround the transmissive portion TA.

[0091] In one or more embodiments, the metal layer ML is arranged around the transmission part TA to at least partially surround the transmission part TA. The metal layer ML can be understood as being arranged between the transmission part TA and the pixel group Pg. Figure 4 In the embodiment, the metal layer ML is continuously provided to surround a transmissive portion TA, but is not limited thereto. That is, the metal layer ML may be modified in various suitable ways, for example, the metal layer ML may be partially disconnected. Figures 8A to 8D Various suitable shapes of the metal layer ML are described.

[0092] Reference Figure 5A The display device according to the embodiment includes a display area DA and a sensor area SA. The main pixel Pm is arranged in the display area DA, and the auxiliary pixel Pa and the transmission portion TA are arranged in the sensor area SA.

[0093] Each primary pixel Pm may include a primary thin film transistor TFT, a primary storage capacitor Cst, and a primary organic light-emitting diode OLED. Each secondary pixel Pa may include a secondary thin film transistor TFT', a secondary storage capacitor Cst', and a secondary organic light-emitting diode OLED'. The transmissive portion TA may include a transmissive hole TAH corresponding to the transmissive portion TA. The metal layer ML is arranged around the transmissive hole TAH.

[0094] The component 20 may be arranged below the sensor area SA. The component 20 may be an infrared (IR) sensor for transmitting and receiving infrared light. Because the transmissive portion TA is arranged in the sensor area SA, IR signals transmitted to and received from the component 20 can be transmitted through the sensor area SA. For example, light emitted from the component 20 may pass through the transmissive portion TA in the z-direction, and light generated outside the display device and incident on the component 20 may also pass through the transmissive portion TA in the z-direction.

[0095] Hereinafter, a structure in which elements included in the display device according to the embodiment are stacked will be described below.

[0096] The substrate 100 may include glass or a polymer resin. The polymer resin may include polyethersulfone (PES), polyacrylate, polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyarylate, polyimide (PI), polycarbonate (PC), cellulose acetate propionate (CAP), etc. The substrate 100 including the polymer resin may be flexible, rollable, or bendable. The substrate 100 may have a multilayer structure including a layer containing a polymer resin and an inorganic layer.

[0097] The buffer layer 111 is located on the substrate 100 to reduce or block the penetration of impurities, moisture or external air from the lower portion of the substrate 100 to provide a flat surface on the substrate 100. The buffer layer 111 may include an inorganic material, an organic material, or an inorganic-organic composite material such as an oxide material or a nitride material, and may have a single-layer structure or a multi-layer structure including an inorganic material and / or an organic material. A barrier layer for preventing or reducing the penetration of external air may also be provided between the substrate 100 and the buffer layer 111. In some embodiments, the buffer layer 111 may include silicon oxide (e.g., SiO2) or silicon nitride (SiN x ). The buffer layer 111 may include a first buffer layer 111 a and a second buffer layer 111 b stacked therein.

[0098] In the sensor area SA, the lower electrode layer BSM may be disposed between the first buffer layer 111a and the second buffer layer 111b. In one or more embodiments, the lower electrode layer BSM may be disposed between the substrate 100 and the first buffer layer 111a. The lower electrode layer BSM is disposed below the auxiliary thin film transistor TFT' and may prevent or reduce degradation of the auxiliary thin film transistor TFT' due to light emitted from the component 20.

[0099] In addition, the lower electrode layer BSM can be connected to the wiring GCL arranged at another layer via a contact hole. The lower electrode layer BSM can receive a supply of a constant voltage or signal from the wiring GCL. For example, the lower electrode layer BSM can receive a first power voltage or a scan signal. Because the lower electrode layer BSM is provided with a constant voltage or signal, the possibility of generating electrostatic discharge can be significantly reduced. The lower electrode layer BSM may include aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W) and / or copper (Cu). The lower electrode layer BSM may have a single-layer structure or a multi-layer structure including one or more of the above materials.

[0100] The main thin-film transistor TFT and the auxiliary thin-film transistor TFT' may be on the buffer layer 111. The main thin-film transistor TFT includes a first semiconductor layer A1, a first gate electrode G1, a first source electrode S1, and a first drain electrode D1. The auxiliary thin-film transistor TFT' includes a second semiconductor layer A2, a second gate electrode G2, a second source electrode S2, and a second drain electrode D2. The main thin-film transistor TFT is connected to the main organic light-emitting diode OLED in the display area DA to drive the main organic light-emitting diode OLED. The auxiliary thin-film transistor TFT' is connected to the auxiliary organic light-emitting diode OLED' in the sensor area SA to drive the auxiliary organic light-emitting diode OLED'.

[0101] The first semiconductor layer A1 and the second semiconductor layer A2 are on the buffer layer 111 and may include polycrystalline silicon. In one or more embodiments, the first semiconductor layer A1 and the second semiconductor layer A2 may include amorphous silicon. In one or more embodiments, the first semiconductor layer A1 and the second semiconductor layer A2 may each include an oxide of at least one selected from the group consisting of indium (In), gallium (Ga), tin (Sn), zirconium (Zr), vanadium (V), hafnium (Hf), cadmium (Cd), germanium (Ge), chromium (Cr), titanium (Ti), and zinc (Zn). The first semiconductor layer A1 and the second semiconductor layer A2 may each include a channel region and a source region and a drain region doped with impurities.

[0102] The second semiconductor layer A2 may overlap with the bottom electrode layer BSM, and the second buffer layer 111b may be located between the second semiconductor layer A2 and the bottom electrode layer BSM. In one or more embodiments, the width of the second semiconductor layer A2 may be smaller than the width of the bottom electrode layer BSM. Therefore, the second semiconductor layer A2 may entirely overlap with the bottom electrode layer BSM when projected from a direction perpendicular to (or orthogonal to) the substrate 100.

[0103] The first gate insulating layer 112 may cover the first semiconductor layer A1 and the second semiconductor layer A2. The first gate insulating layer 112 may include silicon oxide (eg, SiO2), silicon nitride (SiN x ), silicon oxynitride (SiON), aluminum oxide (Al2O3), titanium oxide (e.g., TiO2), tantalum oxide (e.g., Ta2O5), hafnium oxide (e.g., HfO2), and / or zinc oxide (e.g., ZnO2). The first gate insulating layer 112 may have a single-layer structure or a multi-layer structure including the inorganic insulating material.

[0104] The first gate electrode G1 and the second gate electrode G2 are arranged on the first gate insulating layer 112 to overlap the first semiconductor layer A1 and the second semiconductor layer A2, respectively. The first gate electrode G1 and the second gate electrode G2 may include one or more of Mo, Al, Cu, Ti, etc., and may each have a single-layer structure or a multi-layer structure. For example, the first gate electrode G1 and the second gate electrode G2 may each have a single-layer structure including Mo.

[0105] The second gate insulating layer 113 may cover the first gate electrode G1 and the second gate electrode G2. The second gate insulating layer 113 may include silicon oxide (eg, SiO2), silicon nitride (SiN x), silicon oxynitride (SiON), aluminum oxide (e.g., Al2O3), titanium oxide (e.g., TiO2), tantalum oxide (e.g., Ta2O5), hafnium oxide (e.g., HfO2), and / or zinc oxide (e.g., ZnO2). The second gate insulating layer 113 may have a single-layer structure or a multi-layer structure including the inorganic insulating material.

[0106] A first upper electrode CE2 of the main storage capacitor Cst and a second upper electrode CE2 ′ of the auxiliary storage capacitor Cst′ may be disposed on the second gate insulating layer 113 .

[0107] In the display area DA, the first upper electrode CE2 may overlap the first gate electrode G1 disposed therebelow. The first gate electrode G1 and the first upper electrode CE2 overlapping each other may constitute a main storage capacitor Cst, wherein the second gate insulating layer 113 is located between the first gate electrode G1 and the first upper electrode CE2. The first gate electrode G1 may be a first lower electrode CE1 of the main storage capacitor Cst.

[0108] In the sensor area SA, the second upper electrode CE2' may overlap the second gate electrode G2 disposed therebelow. The second gate electrode G2 and the second upper electrode CE2' overlapping each other may constitute an auxiliary storage capacitor Cst', wherein the second gate insulating layer 113 is located between the second gate electrode G2 and the second upper electrode CE2'. The second gate electrode G2 may be the second lower electrode CE1' of the auxiliary storage capacitor Cst'.

[0109] The first and second upper electrodes CE2 and CE2' may each include Al, Pt, Pd, Ag, Mg, Au, Ni, Nd, Ir, Cr, Li, Ca, Mo, Ti, W, and / or Cu, and may have a single-layer structure or a multi-layer structure.

[0110] The interlayer insulating layer 115 may cover the first upper electrode CE2 and the second upper electrode CE2'. The interlayer insulating layer 115 may include silicon oxide (eg, SiO2), silicon nitride (SiN x ), insulating materials of silicon oxynitride (SiON), aluminum oxide (Al2O3), titanium oxide (e.g., TiO2), tantalum oxide (e.g., Ta2O5), hafnium oxide (e.g., HfO2) and / or zinc oxide (e.g., ZnO2).

[0111] When the first gate insulating layer 112, the second gate insulating layer 113, and the interlayer insulating layer 115 are collectively referred to as the inorganic insulating layer IL, the inorganic insulating layer IL may have a first hole H1 corresponding to the transmissive portion TA. The first hole H1 may expose the upper surface of the buffer layer 111 or the substrate 100. The first hole H1 may include a first opening of the first gate insulating layer 112, a second opening of the second gate insulating layer 113, and a third opening of the interlayer insulating layer 115, wherein the first to third openings correspond to the transmissive portion TA. The first to third openings may be formed separately through separate processes, or may be formed simultaneously (e.g., simultaneously) through a single process. Alternatively, the first and second openings may be formed simultaneously (e.g., simultaneously), and the third opening may be formed separately. When the first to third openings are formed through separate processes, steps may be generated on the side surfaces of the first hole H1.

[0112] Alternatively, in one or more embodiments, the inorganic insulating layer IL may include a trench instead of the first hole H1 exposing the buffer layer 111. For example, the first gate insulating layer 112 in the inorganic insulating layer IL is continuously arranged with respect to the transmission portion TA, and the second gate insulating layer 113 and the interlayer insulating layer 115 may have a second opening and a third opening corresponding to the transmission portion TA, respectively.

[0113] Alternatively, the first gate insulating layer 112 and the second gate insulating layer 113 may be continuously arranged to correspond to the transmission portion TA, and the interlayer insulating layer 115 may have a third opening corresponding to the transmission portion TA.

[0114] In one or more embodiments, the inorganic insulating layer IL may not have the first hole H1 corresponding to the transmission portion TA. The inorganic insulating layer IL may have transmittance to light that may be transmitted from / received by the component 20 and may not have a hole corresponding to the transmission portion TA.

[0115] The first source electrode S1 and the second source electrode S2 and the first drain electrode D1 and the second drain electrode D2 are arranged on the interlayer insulating layer 115. The source electrodes S1 and S2 and the drain electrodes D1 and D2 may each include one or more conductive materials (the conductive material includes Mo, Al, Cu, Ti, etc.) and may have a single-layer structure or a multi-layer structure including one or more of the above materials. For example, the source electrodes S1 and S2 and the drain electrodes D1 and D2 may each have a multi-layer structure including Ti / Al / Ti.

[0116] The planarization layer 117 may cover the source electrodes S1 and S2 and the drain electrodes D1 and D2. The planarization layer 117 may have a flat upper surface so that the first and second pixel electrodes 221 and 221' disposed thereon may be planarized.

[0117] The planarization layer 117 may include a single layer structure or a multilayer structure including an organic material or an inorganic material. The planarization layer 117 may include a general polymer (benzocyclobutene (BCB), polyimide, hexamethyldisiloxane (HMDSO), polymethyl methacrylate (PMMA) or polystyrene (PS)), a polymer derivative having a phenol group, an acrylic polymer, an imide polymer, an aryl ether polymer, an amide polymer, a fluorine polymer, a paraxylene polymer, a vinyl alcohol polymer, and a mixture thereof (e.g., a composition). The planarization layer 117 may include a silicon oxide (e.g., SiO2), a silicon nitride (SiN x ), silicon oxynitride (SiON), aluminum oxide (Al2O3), titanium oxide (e.g., TiO2), tantalum oxide (e.g., Ta2O5), hafnium oxide (e.g., HfO2), and / or zinc oxide (e.g., ZnO2). After the planarization layer 117 is disposed, chemical and mechanical polishing may be performed to provide a flat upper surface.

[0118] The planarization layer 117 may have a second hole H2 corresponding to the transmissive portion TA. The second hole H2 may overlap the first hole H1. In one or more embodiments, the lower width W2 of the second hole H2 is greater than the lower width W1 of the first hole H1, but is not limited thereto. For example, the planarization layer 117 may cover the edge of the first hole H1 of the inorganic insulating layer IL, and thus the width of the second hole H2 may be smaller than the width of the first hole H1.

[0119] The planarization layer 117 has an opening exposing one of the first source electrode S1 and the first drain electrode D1 of the main thin film transistor TFT, and the first pixel electrode 221 may contact the first source electrode S1 or the first drain electrode D1 via the opening to be electrically connected to the main thin film transistor TFT.

[0120] In addition, the planarization layer 117 may have an opening exposing one of the second source electrode S2 and the second drain electrode D2 of the auxiliary thin film transistor TFT′, and the second pixel electrode 221 ′ may contact the second source electrode S2 or the second drain electrode D2 via the opening to be electrically connected to the auxiliary thin film transistor TFT′.

[0121] The first pixel electrode 221 and the second pixel electrode 221' may each include a conductive oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide or aluminum zinc oxide (AZO). In one or more embodiments, the first pixel electrode 221 and the second pixel electrode 221' may each include a reflective layer comprising Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr or a compound thereof. In one or more embodiments, the first pixel electrode 221 and the second pixel electrode 221' may also include a layer comprising ITO, IZO, ZnO or In2O3 above / below the reflective layer. In some embodiments, the first pixel electrode 221 and the second pixel electrode 221' may have a stacked structure comprising ITO / Ag / ITO.

[0122] The pixel defining layer 119 may cover the boundary of each of the first pixel electrode 221 and the second pixel electrode 221'. The pixel defining layer 119 overlaps each of the first pixel electrode 221 and the second pixel electrode 221' and has a first opening OP1 and a second opening OP2 that define the light emitting area of ​​the pixel. The pixel defining layer 119 increases the distance between the edges of the first pixel electrode 221 and the second pixel electrode 221' and the counter electrode 223 on the pixel electrodes 221 and 221' to prevent or reduce the generation of arcs at the edges of the pixel electrodes 221 and 221'. The pixel defining layer 119 may include an organic insulating material such as polyimide, polyamide, acrylic resin, BCB, HMDSO, and phenolic resin, and may be obtained by spin coating or the like.

[0123] The pixel defining layer 119 may include a third hole H3 in the transmissive portion TA. The third hole H3 may overlap the first hole H1 and the second hole H2. The provision of the first hole H1, the second hole H2, and the third hole H3 improves the light transmittance of the transmissive portion TA. The counter electrode 223, described later, may be disposed on the inner walls of the first hole H1, the second hole H2, and the third hole H3.

[0124] The metal layer ML may be disposed in the first hole H1, the second hole H2, and the third hole H3. The metal layer ML may be separated from an inner wall of the first hole H1.

[0125] The metal layer ML may be introduced to form the transmission hole TAH to be described later. Alternatively, the metal layer ML may be provided to prevent or reduce heat diffusion when forming the transmission hole TAH. The function of the metal layer ML will be described later.

[0126] The metal layer ML may include various suitable types of metal. In some embodiments, the metal layer ML may be formed simultaneously (e.g., synchronously) with the first pixel electrode 221 and the second pixel electrode 221' using the same material as the pixel electrodes 221 and 221'. In some embodiments, the metal layer ML may have a stacked structure including ITO / Ag / ITO. However, one or more embodiments are not limited thereto. In one or more embodiments, the metal layer ML may be formed simultaneously (e.g., synchronously) with the gate electrodes G1 and G2, the source electrodes S1 and S2, and the drain electrodes D1 and D2 using the same material.

[0127] The first functional layer 222a may cover the pixel defining layer 119. The first functional layer 222a may have a single-layer structure or a multi-layer structure. The first functional layer 222a may be a hole transport layer (HTL) having a single-layer structure. Alternatively, the first functional layer 222a may include a hole injection layer (HIL) and the HTL. The first functional layer 222a may be integrally formed to correspond to the primary pixel Pm and the auxiliary pixel Pa included in the display area DA and the sensor area SA, respectively.

[0128] The first and second emission layers 222b and 222b' are on the first functional layer 222a to correspond to the first and second pixel electrodes 221 and 221', respectively. The first and second emission layers 222b and 222b' may include polymer materials or low-molecular materials, respectively, and may emit red, green, blue, or white light.

[0129] The second functional layer 222c may be formed on the first emission layer 222b and the second emission layer 222b'. The second functional layer 222c may have a single-layer structure or a multi-layer structure. The second functional layer 222c may include an electron transport layer (ETL) and / or an electron injection layer (EIL). The second functional layer 222c may be integrally formed to correspond to the primary pixel Pm and the auxiliary pixel Pa included in the display area DA and the sensor area SA. The first functional layer 222a and / or the second functional layer 222c may be omitted.

[0130] The counter electrode 223 is arranged on the second functional layer 222c. The counter electrode 223 may include a conductive material having a low work function. For example, the counter electrode 223 may include a semi-transparent layer containing Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, lithium (Li), calcium (Ca) or an alloy thereof. Alternatively, the counter electrode 223 may further include a layer containing ITO, IZO, ZnO or In2O3 on the (semi-)transparent layer including the above materials. The counter electrode 223 may be integrally formed to correspond to the main pixel Pm and the auxiliary pixel Pa included in the display area DA and the sensor area SA.

[0131] The layers formed from the first pixel electrode 221 to the opposite electrode 223 in the display area DA may constitute a main organic light emitting diode OLED, and the layers formed from the second pixel electrode 221 ′ to the opposite electrode 223 in the sensor area SA may constitute an auxiliary organic light emitting diode OLED′.

[0132] The capping layer 250 may be on the counter electrode 223. The capping layer 250 may include LiF. Alternatively, the capping layer 250 may include an inorganic insulating material such as silicon nitride and / or an organic insulating material. In one or more embodiments, the capping layer 250 may be omitted.

[0133] Reference Figure 5B In one or more embodiments, the first functional layer 222a, the second functional layer 222c, the opposing electrode 223, and the capping layer 250 may each have a transmissive hole TAH corresponding to the transmissive portion TA. That is, the first functional layer 222a, the second functional layer 222c, the opposing electrode 223, and the capping layer 250 may each have openings 222aH, 222cH, 223H, and 250H corresponding to the transmissive portion TA. In one or more embodiments, the openings 222aH, 222cH, 223H, and 250H forming the transmissive hole TAH may have substantially the same width as one another. For example, the opening 223H in the opposing electrode 223 may have a width substantially the same as that of the transmissive hole TAH.

[0134] In addition, in one or more embodiments, the first functional layer 222a, the second functional layer 222c, and the capping layer 250 may be omitted. In this case, the opening 223H of the opposing electrode 223 may be a transmissive hole TAH.

[0135] The transmissive hole TAH corresponds to the transmissive portion TA and can be understood as the transmissive hole TAH overlapping the transmissive portion TA. Here, the area of ​​the transmissive hole TAH can be smaller than the area of ​​the first hole H1 formed in the inorganic insulating layer IL. For example, in Figure 5A , the width Wt of the transmissive hole TAH is smaller than the width W1 of the first hole H1. Here, the area of ​​the transmissive hole TAH and the area of ​​the first hole H1 may both be defined as the area of ​​the narrowest opening.

[0136] In one or more embodiments, the first functional layer 222a, the second functional layer 222c, the counter electrode 223, and the capping layer 250 may be disposed on the side surfaces of the first hole H1, the second hole H2, and the third hole H3. In some embodiments, the side surfaces of the first hole H1, the second hole H2, and the third hole H3 may be inclined more gently (e.g., less steeply or more gently) relative to the upper surface of the substrate 100 than the inclination of the transmissive hole TAH relative to the upper surface of the substrate 100.

[0137] The formation of the transmission hole TAH removes members such as the opposing electrode 223 from the transmission portion TA, and thus, light transmittance of the transmission portion TA may be greatly improved.

[0138] The main organic light-emitting diode OLED and the auxiliary organic light-emitting diode OLED′ may be covered by an encapsulation substrate 300A. The encapsulation substrate 300A may include a transparent material. For example, the encapsulation substrate 300A may include a glass material. Alternatively, the encapsulation substrate 300A may include a polymer resin, etc. The encapsulation substrate 300A may prevent or substantially prevent external moisture or impurities from penetrating into the main organic light-emitting diode OLED and the auxiliary organic light-emitting diode OLED′.

[0139] A sealing material such as a sealant may be disposed between the substrate 100 on which the main organic light emitting diode OLED and the auxiliary organic light emitting diode OLED′ are formed and the encapsulation substrate 300A. The sealing material may block external moisture or impurities that may penetrate between the substrate 100 and the encapsulation substrate 300A.

[0140] Figure 5C is a cross-sectional view of a display device according to an embodiment. Figure 5C In, with Figure 5A Like reference numerals may denote like elements, and their detailed description may be omitted.

[0141] Reference Figure 5C , the display device according to the embodiment includes a thin film encapsulation layer 300 disposed on the cover layer 250. The thin film encapsulation layer 300 may include at least one inorganic encapsulation layer and at least one organic encapsulation layer, and in this regard, Figure 5C A structure of the thin film encapsulation layer 300 is shown in which a first inorganic encapsulation layer 310, an organic encapsulation layer 320, and a second inorganic encapsulation layer 330 are stacked. In one or more embodiments, the stacking order and number of the organic encapsulation layers and the inorganic encapsulation layers may vary.

[0142] The first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 may include one or more inorganic insulating materials such as aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride, and may be manufactured by chemical vapor deposition (CVD). The organic encapsulation layer 320 may include a polymer material. The polymer material may include silicone resin, acrylic resin, epoxy resin, polyimide, polyethylene, etc.

[0143] The first inorganic encapsulating layer 310 , the organic encapsulating layer 320 , and the second inorganic encapsulating layer 330 may be integrally formed to cover the display area DA and the sensor area SA.

[0144] In one or more embodiments, the organic encapsulation layer 320 may be integrally formed to cover the display area DA and the sensor area SA, but may not be present in the transmissive portion TA (e.g., not cover the transmissive portion TA). In other words, the organic encapsulation layer 320 may have an opening corresponding to the transmissive portion TA. In this case, the first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 may contact each other in the transmissive hole TAH.

[0145] Figures 6A to 6C are cross-sectional views sequentially illustrating a method of manufacturing a display device according to an embodiment.

[0146] Reference Figure 6A A preliminary metal layer PML is formed in the first hole H1 of the inorganic insulating layer IL. The preliminary metal layer PML may include a central portion PML-c and an edge portion PML-e. The central portion PML-c and the edge portion PML-e may be separated from each other. In one or more embodiments, the central portion PML-c and the edge portion PML-e may be at least partially connected to each other. The central portion PML-c may correspond to a majority of the transmissive portion TA. The edge portion PML-e may represent an edge portion of the preliminary metal layer PML arranged to surround the central portion PML-c.

[0147] The preliminary metal layer PML may include one or more metals such as Ag, Al, Pt, Pd, Au, Ni, Mo, Ti, etc. In addition, the preliminary metal layer PML may further include a layer containing ITO, IZO, ZnO, or In2O3 above or below the metal material. In one embodiment, the preliminary metal layer PML may be formed simultaneously (e.g., synchronously) with the pixel electrodes 221 and 221' using the same material as that of the pixel electrodes 221 and 221'.

[0148] The first functional layer 222 a , the second functional layer 222 c , the opposing electrode 223 , and the capping layer 250 , which are integrally formed in the display area DA and the sensor area SA, are sequentially formed on the preliminary metal layer PML.

[0149] Next, refer to Figure 6B The laser beam LP is directed from the lower portion of the substrate 100 to irradiate the preliminary metal layer PML disposed in the transmissive portion TA. That is, the laser beam LP travels in the z-direction from the lower surface of the substrate 100 and is then directed to irradiate the lower surface of the preliminary metal layer PML. The laser beam LP may have an infrared (IR) wavelength. When the laser beam LP is IR, the transmittance through the substrate 100 and the buffer layer 111 is approximately 80% to approximately 90% or greater, thereby effectively reaching the preliminary metal layer PML.

[0150] Because the preliminary metal layer PML includes an opaque metal, the preliminary metal layer PML may absorb the laser beam LP. Therefore, the preliminary metal layer PML thermally expands and the preliminary metal layer PML irradiated by the laser beam LP may be peeled off from the substrate 100 or the buffer layer 111.

[0151] Since the preliminary metal layer PML is partially peeled off, the first functional layer 222a, the second functional layer 222c, the counter electrode 223 and the capping layer 250 disposed on the preliminary metal layer PML may also be peeled off together with the preliminary metal layer PML. Figure 6C As shown in FIG, the central portion PML-c of the initial metal layer PML is removed and the metal layer ML partially including the edge portion PML-e can be obtained. In addition, a transmissive hole TAH including an opening of the first functional layer 222a, the second functional layer 222c, the opposite electrode 223 and the cap layer 250 can be obtained.

[0152] When the inorganic material layer, organic material layer, counter electrode, etc. arranged in the transmissive portion TA are removed by directing the laser beam LP in the z direction (i.e., from the upper portion of the substrate 100 toward the transmissive portion TA) to form the transmissive hole TAH, the laser-treated surface may be secondary damaged due to particles generated during the removal process. However, because the embodiment uses the peeling caused by the thermal expansion of the initial metal layer PML, damage caused by particles does not occur.

[0153] In some embodiments, the laser beam LP may be directed to irradiate the central portion PML-c of the preliminary metal layer PML rather than the entire portion of the preliminary metal layer PML. That is, the area LPA irradiated by the laser beam LP may be smaller than the area of ​​the preliminary metal layer PML. Figure 6B The width W of the area LPA irradiated by the laser beam LP is L Than the width W of the initial metal layer PML M Small.

[0154] When the laser beam LP is first directed to irradiate the outermost edge of the preliminary metal layer PML, heat may diffuse to the auxiliary pixels Pa adjacent to the transmissive portion TA, and thus, damage may occur to the auxiliary pixels Pa. In embodiments, because the area irradiated by the laser beam LP is smaller than the area of ​​the preliminary metal layer PML, heat diffusion caused by the laser beam LP may be prevented or reduced.

[0155] In addition, to prevent or reduce heat diffusion, the central portion PML-c and the edge portion PML-e of the preliminary metal layer PML may be separated from each other. Alternatively, a set (eg, predetermined) pattern may be formed on or at a boundary of the preliminary metal layer PML.

[0156] 7A to 7E shows the shape of the initial metal layer PML that can be applied to one or more embodiments, Figures 8A to 8E shows the use of the metal layer ML 7A to 7E The shape of the initial metal layer PML.

[0157] Reference Figure 7A The initial metal layer PML includes a central portion PML-c and an edge portion PML-e surrounding the central portion PML-c. The central portion PML-c corresponds to the center of the transmissive portion TA, and the edge portion PML-e is separated from the central portion PML-c and surrounds the central portion PML-c. The central portion PML-c may be arranged in the area LPA irradiated by the laser beam, and the edge portion PML-e may be on the outside of the area LPA or may partially overlap the area LPA.

[0158] Because the center portion PML-c and the edge portion PML-e are separated from each other, when the laser beam is guided to irradiate the center portion PML-c, heat conduction from the center portion PML-c to the edge portion PML-e can be prevented or reduced, and even when the laser beam is guided to irradiate the edge portion PML-e, because the area irradiated by the laser beam is relatively small, heat diffusion to the outside can be prevented or reduced.

[0159] Figure 8A shows the metal layer ML in application Figure 7A The shape of the initial metal layer PML. Figure 8A The central portion PML-c of the initial metal layer PML is removed after being irradiated by the laser beam, and the metal layer ML may be provided as the edge portion PML-e or a portion of the edge portion PML-e. The metal layer ML may surround the outside of the transmission hole TAH.

[0160] Reference Figure 7B The edge portion PML-e of the preliminary metal layer PML may include a first edge portion PML-e1 surrounding the central portion PML-c and a second edge portion PML-e2 separated from and surrounding the first edge portion PML-e1.

[0161] Figure 8B shows the metal layer ML in application Figure 7B The shape of the initial metal layer PML. Figure 8B, the center portion PML-c of the initial metal layer PML is removed after being irradiated by the laser beam, and the metal layer ML may be provided as the edge portion PML-e or a portion of the edge portion PML-e. The metal layer ML may include a first metal layer ML1 and a second metal layer ML2. The first metal layer ML1 may surround the outside of the transmissive hole TAH. The second metal layer ML2 may at least partially surround the first metal layer ML1. In some embodiments, the first metal layer ML1 may be removed and only the second metal layer ML2 may be provided.

[0162] Reference Figure 7C The central portion PML-c and the edge portion PML-e of the initial metal layer PML may be at least partially connected to each other. Alternatively, the initial metal layer PML may have a plurality of holes PML-H in its boundary. In this manner, since the plurality of holes PML-H are located at the boundary, the heat diffusion rate from the central portion PML-c to the edge portion PML-e may be reduced.

[0163] Figure 8C shows the metal layer ML is applied Figure 7C The shape of the initial metal layer PML. Figure 8C The central portion PML-c of the preliminary metal layer PML is removed after being irradiated by the laser beam, and the metal layer ML may be disposed as the edge portion PML-e or a portion of the edge portion PML-e. The metal layer ML may include a plurality of protrusion patterns P toward the transmissive hole TAH.

[0164] Reference Figure 7D , the edge portion PML-e of the preliminary metal layer PML may include a first edge portion PML-e1 and a second edge portion PML-e2. The first edge portion PML-e1 surrounds the central portion PML-c, and the second edge portion PML-e2 is separated from the first edge portion PML-e1 and surrounds the first edge portion PML-e1. In addition, the first edge portion PML-e1 may be at least partially connected to the central portion PML-c.

[0165] Figure 8D shows the metal layer ML in application Figure 7D The shape of the initial metal layer PML. Figure 8DAfter being irradiated with a laser beam, the central portion PML-c of the initial metal layer PML is removed, and the metal layer ML may be provided as an edge portion PML-e or a portion of the edge portion PML-e. The metal layer ML may include a first metal layer ML1 and a second metal layer ML2. The first metal layer ML1 may surround the exterior of the transmissive hole TAH. The second metal layer ML2 is separate from the first metal layer ML1 and may at least partially surround the first metal layer ML1. The first metal layer ML1 may include a plurality of protrusion patterns P facing the transmissive hole TAH.

[0166] like 7A to 7D As shown in , the initial metal layer PML may include various suitable patterns in its boundaries to prevent or reduce heat diffusion. However, one or more embodiments are not limited thereto. Figure 7E As shown in , the center portion and the edge portion of the preliminary metal layer PML can be integrally provided. Here, the area LPA irradiated by the laser beam has an area smaller than that of the preliminary metal layer PML, so that heat diffusion to the edge of the preliminary metal layer PML can be prevented or reduced.

[0167] Figure 8E shows the metal layer ML in application Figure 7E The shape of the initial metal layer PML. Figure 8E , a central portion of the preliminary metal layer PML may be removed after being irradiated by the laser beam, and the metal layer ML may include only an edge of the preliminary metal layer PML. The metal layer ML may surround the outside of the transmission hole TAH.

[0168] Figure 9 FIG is a cross-sectional view partially showing a display device according to an embodiment. Figure 9 In, with Figure 5A Like reference numerals may denote like elements, and their detailed description may be omitted.

[0169] Reference Figure 9 The metal layer ML' may be formed on the same layer using the same material as the lower electrode layer BSM. In this case, the through hole TAH' may include an opening of the second buffer layer 111b, an opening of the first functional layer 222a, an opening of the second functional layer 222c, an opening of the counter electrode 223, and an opening of the cap layer 250.

[0170] In addition, the metal layer ML' may be disposed not only in the first hole H1 but also overlapped with at least one of the first gate insulating layer 112, the second gate insulating layer 113 and the interlayer insulating layer 115. That is, the metal layer ML' (eg Figure 9 The width W M' It may be larger than the width W1 of the first hole H1.

[0171] FIG. 10A to FIG. 10B is a plan view partially showing the display devices 2 and 3 according to the embodiment.

[0172] Reference Figure 10A , the display device 2 may further include an opening area OA.

[0173] The component 30 may be arranged below the opening area OA. The opening area OA may be considered as a transmissive portion through which light and / or sound output from or traveling toward the component 30 may pass from the outside. In an embodiment, when light is transmitted through the opening area OA, the transmittance may be approximately 20% or greater, approximately 50% or greater, approximately 75% or greater, approximately 80% or greater, approximately 85% or greater, or approximately 90% or greater. The opening area OA is an area in which no display element is arranged and may not provide an image. In an embodiment, the opening area OA is arranged in the display area DA and the main pixels may be arranged around the opening area OA.

[0174] The component 20 may be disposed under the sensor area SA. Since the auxiliary pixels are disposed in the sensor area SA, the sensor area SA may provide an image.

[0175] In some embodiments, the light transmittance of the opening area OA may be greater than that of the sensor area SA. Therefore, components 30 requiring high light transmittance (e.g., a camera, etc.) may be arranged in the opening area OA, and sensors for sensing IR may be arranged in the sensor area SA.

[0176] Reference Figure 10B The sensor area SA of the display device 3 includes an area in which the components 20 are arranged and may be arranged at one side of the display area DA. The sensor area SA may be arranged corresponding to one side of the display area DA, and a plurality of components 20 may be arranged in the sensor area SA.

[0177] In addition, the sensor area SA includes the auxiliary pixels Pa and the transmissive portion TA, and thus, may provide an image having a lower resolution than that of an image displayed by the display area DA.

[0178] The sensor area SA may include an opening area OA therein. The opening area OA may have a higher light transmittance than the sensor area SA and may include a component 30 that is highly sensitive to light. The opening area OA may be surrounded by the auxiliary pixels Pa and the transmissive portion TA. The opening area OA may have an area larger than that of the transmissive portion TA.

[0179] Figure 11 It is along Figure 10A The cross-sectional view taken along line IV-IV' and line V-V'. Figure 11In, with Figure 5A Like reference numerals may denote like elements, and their detailed description may be omitted.

[0180] Reference Figure 11 The display device may include an opening area OA. The opening area OA has an opening hole OAH corresponding to the opening area OA, and the additional metal layer ML" may be disposed on an outer portion of the opening hole OAH. The additional metal layer ML" may at least partially surround the opening area OA or the opening hole OAH.

[0181] The additional metal layer ML" is provided to form the opening hole OAH and performs the same function as that of the metal layer ML. The display device may further include a first additional hole H1' corresponding to the opening area of ​​the inorganic insulating layer IL, and the first additional hole H1' may overlap with the opening hole OAH. The additional metal layer ML" may be arranged in the first additional hole H1'. The structure of the opening hole OAH and its periphery may be similar to the structure of the transmissive hole TAH and its periphery.

[0182] The width Wo of the opening hole OAH may be greater than the width Wt of the transmissive hole TAH. The opening hole OAH may overlap the entire assembly 30 , whereas the transmissive hole TAH may partially overlap the assembly 20 .

[0183] In the opening area OA, a substrate hole 100H that penetrates the substrate 100 may be provided. Because the opening area OA includes the substrate hole 100H, the light transmittance of the opening area OA may be greater than the light transmittance of the sensor area SA. Therefore, the component 30 requiring high light transmittance may be arranged below the opening area OA.

[0184] According to the display device of the embodiment, the pixel portion and the transmissive portion with improved transmittance are arranged in a sensor area corresponding to a component such as a sensor, and thus, an image can be realized on an area overlapping the component while (e.g., synchronously) providing an environment in which the component can operate.

[0185] It should be understood that the embodiments described herein should be considered in a descriptive sense only and not for purposes of limitation. Descriptions of features or aspects within each embodiment should generally be considered as available for other similar features or aspects in other embodiments.

[0186] Although one or more embodiments have been described with reference to the accompanying drawings, it will be understood by those skilled in the art that various suitable changes in form and details may be made therein without departing from the spirit and scope as defined by the claims and their equivalents.

Claims

1. A display device, comprising: a substrate comprising a display area and a sensor area, wherein the display area comprises primary pixels and the sensor area comprises secondary pixels and a transmissive portion; a first pixel electrode and a first emission layer, located in each of the primary pixels; a second pixel electrode and a second emission layer, located in each of the auxiliary pixels; a counter electrode integrally arranged in the display region and the sensor region; and a metal layer at least partially surrounding the transmissive portion, Wherein, the counter electrode has an opening corresponding to the transmission part.

2. The display device according to claim 1, further comprising: an inorganic insulating layer, located on the substrate, wherein the inorganic insulating layer has a first hole corresponding to the transmission portion, and The counter electrode is located on a sidewall of the first hole.

3. The display device according to claim 2, wherein: The metal layer is located in the first hole.

4. The display device according to claim 2, wherein The opening in the counter electrode has an area smaller than an area of ​​the first hole.

5. The display device according to claim 1 , further comprising: a functional layer integrally provided in the display region and the sensor region, the functional layer being located between the first pixel electrode and the counter electrode and having an opening corresponding to the transmission portion; The opening of the counter electrode and the opening of the functional layer overlap with each other and form a through hole. The display device according to claim 1 , wherein: The metal layer and the first pixel electrode include the same material.

7. The display device according to claim 1, wherein The metal layer includes a first metal layer surrounding the transmission portion and a second metal layer separated from the first metal layer, the second metal layer at least partially surrounding the first metal layer.

8. The display device according to claim 1, wherein The metal layer includes a protrusion extending toward the transmission portion.

9. The display device according to claim 1, further comprising: The lower electrode layer is located in the sensor area. The lower electrode layer is located between the substrate and the auxiliary thin film transistor in the auxiliary pixel.

10. The display device according to claim 9, wherein The metal layer and the lower electrode layer include the same material.

11. The display device according to claim 9, further comprising: an inorganic insulating layer, located on the substrate, wherein the inorganic insulating layer has a first hole corresponding to the transmission portion, and The metal layer has a width greater than a width of the first hole.

12. The display device according to claim 1, further comprising: A component is located on the lower surface of the substrate, and the component corresponds to the sensor area.

13. The display device according to claim 1, wherein The substrate further includes an opening area surrounded by the display area, and the display device further includes an additional metal layer surrounding the opening area.

14. The display device according to claim 13, wherein: The substrate has substrate holes corresponding to the opening areas.

15. A method for manufacturing a display device, the display device comprising a substrate, the substrate comprising a display area and a sensor area, the display area comprising a primary pixel, and the sensor area comprising a secondary pixel and a transmissive portion, the method comprising: forming an initial metal layer on an upper surface of the substrate, the initial metal layer overlapping the transmissive portion; forming a counter electrode on the initial metal layer; directing a laser beam to irradiate the initial metal layer from a lower surface of the substrate; as well as peeling the initial metal layer irradiated by the laser beam from the substrate, The initial metal layer has a pattern at its edge.

16. The method according to claim 15, wherein The initial metal layer includes a central portion and an edge portion separated from the central portion, the edge portion surrounding the central portion.

17. The method according to claim 16, wherein The central portion is at least partially connected to the edge portion.

18. The method according to claim 16, wherein The edge portion includes a first edge portion and a second edge portion, the first edge portion being separated from the second edge portion.

19. The method according to claim 18, wherein The first edge portion is at least partially connected to the central portion.

20. The method according to claim 15, wherein The laser beam includes infrared light.

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