Integrated Driver and Voltage Converter

Abstract

The present invention discloses an integrated driver and a voltage converter. The integrated driver is applied to the voltage converter including a switched-capacitor conversion circuit. When the voltage converter is just started, the voltage borne by the first type of power transistor is the input voltage. By setting the first type of power transistor as a GaN transistor, the safety of the first type of power transistor is made more reliable.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technologies, and particularly to an integrated driver and a voltage converter. Background Art

[0002] In existing switched-capacitor DC / DC converters, before startup or just at the start of startup, the voltage borne by the first transistor connected between the input end of the converter and the reference ground is the input voltage, while during normal operation, the voltage borne by the first transistor is less than the input voltage. In the prior art, setting the first transistor and other transistors to be of the same type will affect the safety of the first transistor and is not conducive to the high efficiency of the system. Summary of the Invention

[0003] In view of this, the present invention provides an integrated driver and a voltage converter. By setting the first type of power transistor as a GaN transistor, the safety of the first type of power transistor is made more reliable.

[0004] According to a first aspect of the present invention, there is provided an integrated driver applied to a voltage converter including a switched-capacitor conversion circuit, comprising: a first wafer including a first type of power transistor; a second wafer including at least one second type of power transistor, the voltage withstand performance of the first type of power transistor being higher than that of the second type of power transistor; the first wafer and the second wafer being serially coupled between the high-potential end and the low-potential end of the voltage converter such that the first type of power transistor receives a high-voltage signal.

[0005] Preferably, the first type of power transistor is set as a GaN transistor.

[0006] According to a second aspect of the present invention, there is provided an integrated driver applied to a voltage converter including a switched-capacitor conversion circuit, comprising: a first wafer including a first type of power transistor and at least one second type of power transistor, the voltage withstand performance of the first type of power transistor being higher than that of the second type of power transistor; the first wafer being coupled between the high-potential end and the low-potential end of the voltage converter such that the first type of power transistor receives a high-voltage signal.

[0007] Preferably, the first type of power transistor and at least one of the second type of power transistors share a substrate.

[0008] Preferably, the first type of power transistor is a Si-based GaN power transistor.

[0009] Preferably, the breakdown voltage of the drain-source of the first type of power transistor is the breakdown voltage withstand performance of the first type of power transistor, and the breakdown voltage of the drain-source of the second type of power transistor is the breakdown voltage withstand performance of the second type of power transistor.

[0010] Preferably, the on-resistance of the first type of power transistor is less than the on-resistance of the second type of power transistor.

[0011] Preferably, the parasitic capacitance of the first type of power transistor is less than the parasitic capacitance of the second type of power transistor.

[0012] Preferably, the second type of power transistor is set as a Si transistor.

[0013] Preferably, the voltage converter includes: the first type of power transistor, whose first end is connected to the input end of the voltage converter; and a switch and a capacitor network, which are connected between the second end of the first type of power transistor and the reference ground.

[0014] Preferably, the maximum voltage borne by the first type of power transistor is the input voltage of the voltage converter.

[0015] Preferably, before the voltage converter starts, the voltage borne by the first type of power transistor is greater than the voltage borne by the second type of power transistor.

[0016] Preferably, before the voltage converter starts, the path from the second end of the first type of power transistor to the reference ground through the switch and the capacitor network is at zero potential.

[0017] Preferably, the voltage borne by the first type of power transistor when the voltage converter is operating normally is less than the voltage borne by it before the voltage converter starts.

[0018] Preferably, the switch and the capacitor network include a plurality of the second type of power transistors connected in series between the second end of the first type of power transistor and the reference ground.

[0019] Preferably, the switch and the capacitor network further include at least one set of two second type of power transistors connected in parallel and in series between the output end of the voltage converter and the reference ground.

[0020] Preferably, the switch and capacitor network further includes: N sets of flying capacitors and second-type power transistors connected in series between the switch node and the ground potential, where the switch node is the common connection point between two adjacent power transistors, and N is greater than or equal to 1; N + 1 inductors, where one inductor is connected between the last switch node and the output terminal, and the remaining inductors are connected between the common connection point of the series-connected flying capacitors and the second-type power transistors and the positive output terminal, and the last switch node is the common connection point of two second-type power transistors connected in series adjacent to the reference ground.

[0021] Preferably, the switch and capacitor network further includes: a first-type flying capacitor and a second-type power transistor connected in series between the switch node and the ground potential, where the switch node is the common connection point between two adjacent power transistors; a first-type inductor connected between the common connection point of the series-connected first-type flying capacitor and the second-type power transistor and the positive output terminal; a second-type inductor connected between the last switch node and the positive output terminal; a second-type flying capacitor connected between the switch node and one end of the second-type inductor, where the last switch node is the common connection point of two second-type power transistors connected in series adjacent to the reference ground.

[0022] Preferably, the voltage converter further includes at least one flying capacitor, and at least part of the flying capacitors are connected in parallel with the corresponding power transistors.

[0023] Preferably, the flying capacitor is located outside the first wafer and the second wafer.

[0024] Preferably, the flying capacitor is connected to the first wafer and the second wafer by connecting to the corresponding switch node pin.

[0025] Preferably, the voltage converter further includes a switched-mode power stage circuit, the switched-mode power stage circuit includes at least one magnetic element, and the switched-mode power stage circuit multiplexes at least two of the second-type power transistors or one first-type power transistor and one second-type power transistor.

[0026] Preferably, the at least one magnetic element is encapsulated above the first wafer and the second wafer.

[0027] Preferably, each magnetic element in the at least one magnetic element is connected to the first wafer and the second wafer by connecting to the switch node pins and the output pins of the two multiplexed power transistors corresponding to it.

[0028] Preferably, it further includes a control circuit configured to control the multiplexed power transistor in a PWM mode, a PFM mode, or a PWM / PFM hybrid mode to regulate the output voltage.

[0029] Preferably, the control circuit is located on the first wafer or the second wafer.

[0030] Preferably, the control circuit is located on a third wafer.

[0031] According to a third aspect of the present invention, there is provided a voltage converter including the integrated driver, wherein a first type of power transistor has its first end connected to an input end of the voltage converter, and further includes a switch and a capacitor network, and the switch and the capacitor network are connected between a second end of the first type of power transistor and a reference ground.

[0032] Preferably, the switch and the capacitor network include a plurality of the second type of power transistors connected in series between the second end of the first type of power transistor and the reference ground.

[0033] Preferably, it further includes a switched power stage circuit, and the switched power stage circuit includes at least one magnetic element, and multiplexes two of the second type of power transistors or one of the first type of power transistor and one of the second type of power transistor.

[0034] According to the integrated driver and the voltage converter provided by the present invention, the integrated driver is applied to the voltage converter including a switched-capacitor conversion circuit. When the voltage converter is just started, the voltage borne by the first type of power transistor is the input voltage. By setting the first type of power transistor as a GaN transistor, the safety of the first type of power transistor is made more reliable. At the same time, by setting the second type of power transistor as an Si transistor, the system of the integrated driver has higher efficiency. Description of the Drawings

[0035] Figure 1 A circuit diagram of a voltage converter according to a first embodiment of the present invention;

[0036] Figure 2 A circuit diagram of a voltage converter according to a second embodiment of the present invention;

[0037] Figure 3 A circuit diagram of a voltage converter according to a third embodiment of the present invention;

[0038] Figure 4 A circuit diagram of a voltage converter according to a fourth embodiment of the present invention;

[0039] Figure 5Circuit diagram of a voltage converter according to the fifth embodiment of the present invention;

[0040] Figure 6 Circuit diagram of a voltage converter according to the sixth embodiment of the present invention;

[0041] Figure 7 Circuit diagram of a voltage converter according to the seventh embodiment of the present invention. Detailed implementation manners

[0042] The present invention will be described in more detail below with reference to the accompanying drawings. In each of the drawings, the same components are denoted by similar reference numerals. For clarity, the various parts in the drawings are not drawn to scale. In addition, some well-known parts may not be shown. For the sake of brevity, the structure obtained after several steps may be described in one drawing. Many specific details of the present invention, such as the structure, material, size, processing technology, and technique of each component, are described below in order to understand the present invention more clearly. However, as those skilled in the art can understand, the present invention may be implemented without these specific details.

[0043] The present invention discloses an integrated driver, which is applied to a voltage converter including a switched-capacitor conversion circuit, and includes: a first wafer including a first-type power transistor; a second wafer including at least one second-type power transistor, wherein the breakdown voltage performance of the first-type power transistor is higher than that of the second-type power transistor; the first wafer and the second wafer are serially coupled between the high-potential end and the low-potential end of the voltage converter, such that the first-type power transistor receives a high-voltage signal. Among them, the first-type power transistor is set as a GaN power transistor. In this embodiment, the high-potential end is the input end of the voltage converter, and the low-potential end is the ground end of the voltage converter.

[0044] Of course, in other embodiments, the integrated driver may also include only one wafer. Specifically, the integrated driver includes: a first wafer including a first-type power transistor and at least one second-type power transistor, wherein the breakdown voltage performance of the first-type power transistor is higher than that of the second-type power transistor; the first wafer is coupled between the high-potential end and the low-potential end of the voltage converter, such that the first-type power transistor receives a high-voltage signal. Among them, the first-type power transistor and at least one of the second-type power transistors share a substrate. The first-type power transistor is a Si-based GaN power transistor.

[0045] Among them, the second type of power transistor is set as a Si transistor. The breakdown voltage of the first type of power transistor between the drain and the source is the breakdown voltage withstand performance of the first type of power transistor, and the breakdown voltage of the second type of power transistor between the drain and the source is the breakdown voltage withstand performance of the second type of power transistor. Additionally, at the same breakdown voltage rating, the on-resistance of the first type of power transistor is smaller than that of the second type of power transistor, and the parasitic capacitance of the first type of power transistor is smaller than that of the second type of power transistor. Especially when the breakdown voltage rating is greater than 40V, the on-resistance and parasitic capacitance of the first type of power transistor are smaller than those of the second type of power transistor.

[0046] Specifically, as Figure 1 shown is the circuit diagram of a voltage converter according to the first embodiment of the present invention. The voltage converter includes the integrated driver. The voltage converter includes a first type of power transistor Q1, an output capacitor Co, as well as a switch and a capacitor network. Among them, the first end of the first type of power transistor Q1 is connected to the input end of the voltage converter; the switch and the capacitor network are connected between the second end of the first type of power transistor and the reference ground; the output capacitor Co is connected between the output end of the voltage converter and the reference ground. The switch and the capacitor network include at least one second type of power transistor and at least one flying capacitor, and the flying capacitor conforms to the structural connection mode of the switched-capacitor conversion circuit. As Figure 2 shown is the circuit diagram of a voltage converter according to the second embodiment of the present invention. The voltage converter further includes a switched-mode power stage circuit, and the switched-mode power stage circuit includes a magnetic element. The switched-mode power stage circuit multiplexes at least two of the second type of power transistors or one first type of power transistor and one second type of power transistor. Among them, the magnetic element is an inductor, and the magnetic element is connected between the switch and the capacitor network and the output end. The voltage converter further includes a control circuit configured to control the multiplexed power transistors in a PWM mode, a PFM mode, or a PWM / PFM hybrid mode to regulate the output voltage.

[0047] Of course, in other embodiments, the voltage converter may also include a multiphase structure connected in parallel between the input end and the reference ground, that is, each phase structure includes a first type of power transistor Q1 connected in series between the input end and the reference ground, as well as a switch and a capacitor network. Among them, the first type of power transistor Q1 in each phase structure is set as a GaN transistor.

[0048] Among them, the maximum voltage borne by the first type of power transistor Q1 is the input voltage of the voltage converter. Before the voltage converter starts, the voltage borne by the first type of power transistor is greater than the voltage borne by the second type of power transistor. Specifically, before the voltage converter starts, the path from the second terminal of the first type of power transistor to the reference ground through the switch and the capacitive network is at zero potential. The voltage borne by the first type of power transistor when the voltage converter is operating normally is less than the voltage it bears before the voltage converter starts, and the voltage borne by the second type of power transistor when the voltage converter is operating normally is less than the voltage borne by the first type of power transistor before the voltage converter starts. The switch and the capacitive network include a plurality of the second type of power transistors connected in series between the second terminal of the first type of power transistor and the reference ground.

[0049] The first type of power transistor Q1 is located on the first wafer, and the at least one second type of power transistor is located on the second wafer. At this time, the first type of power transistor Q1 is set as a GaN power transistor. In another embodiment, the first type of power transistor Q1 and the at least one second type of power transistor are located on the same wafer, that is, the first type of power transistor Q1 and the at least one second type of power transistor share a substrate. At this time, the first type of power transistor Q1 is set as an Si-based GaN power transistor. Among them, the at least one flying capacitor is located outside the first wafer and the second wafer, and the at least one flying capacitor is connected to the first wafer and the second wafer by connecting to the corresponding switch node pins. The at least one magnetic element is packaged above the first wafer and the second wafer, and each magnetic element in the at least one magnetic element is connected to the first wafer and the second wafer by connecting to the switch node pins and the output pins of the two power transistors multiplexed with it. The control circuit is located on the first wafer or the second wafer. Of course, the control circuit can also be located on a third wafer.

[0050] Specifically, as Figure 3As shown, it is a circuit diagram of a voltage converter according to the third embodiment of the present invention. The switch and capacitor network includes a plurality of the second type of power transistors Q2, Q3, and Q4 connected in series between the second end of the first type of power transistor Q1 and the reference ground. The first type of power transistor and the plurality of the second type of power transistors form at least one first switch group, wherein each switch group includes two transistors connected in series. In this embodiment, transistor Q1 and transistor Q2 form a first switch group, and transistor Q3 and transistor Q4 form a first switch group. The switch and capacitor network further includes a first flying capacitor C1 and an output capacitor Co. The first flying capacitor C1 is connected in parallel between the common node of transistor Q1 and transistor Q2 and the common node of transistor Q3 and transistor Q4; the output capacitor Co is connected in parallel between the common node of the two first switch groups (i.e., the common node of transistor Q2 and transistor Q3) and the reference ground. When the voltage converter operates stably, the voltages borne by transistors Q1 to Q4 are all 1 / 2Vin. However, before the voltage converter starts or just after it starts, the output voltage Vout and the voltage across the first flying capacitor C1 are both 0V. At this time, the voltage borne by the first type of power transistor Q1 is the input voltage Vin.

[0051] As Figure 4 shown, it is a circuit diagram of a voltage converter according to the fourth embodiment of the present invention. Different from the voltage converter of the Figure 3 embodiment, the voltage converter includes a switched-mode power stage circuit, and the switched-mode power stage circuit further includes a second flying capacitor C2 and an inductor L0. Among them, the second flying capacitor C2 is connected in parallel between the common node of the two first switch groups (i.e., the common node of transistor Q2 and transistor Q3) and the reference ground. The inductor L0 is connected between the common node of transistor Q3 and transistor Q4 and the output terminal, and the output capacitor Co is connected between the output terminal (the second end of the inductor L0) and the reference ground. The switched-mode power stage circuit multiplexes at least one first switch group. In this embodiment, the switch converter multiplexes transistors Q3 and Q4. The voltage converter further includes a control circuit (not shown in the figure), configured to control the multiplexed power transistors in a PWM mode, a PFM mode, or a PWM / PFM hybrid mode to adjust the output voltage.

[0052] In other embodiments, the switch and capacitor network includes a transformer circuit for replacing the inductor L0 to form an isolated switched-mode power stage circuit. The primary circuit of the transformer circuit is connected between the common node of the transistors Q3 and Q4 and the reference ground. The primary circuit includes an inductor, a primary coil, and a resonant capacitor connected in series. The transformer further includes a secondary coil coupled to the primary coil and a rectifier circuit. No limitation is imposed on simple variations of the voltage converter structure. As Figure 5 shown, a circuit diagram of a voltage converter according to a fifth embodiment of the present invention is provided. The switch and capacitor network includes a plurality of the second type power transistors connected in series between the second end of the first type power transistor Q1 and the reference ground. Here, they are transistors Q2-Q6. A first switch group formed by the second type power transistors Q5 and Q6 is connected in parallel between the output terminal and the reference ground. The switch and capacitor network further includes at least one second switch group arranged in parallel, and the at least one second switch group is connected in parallel with the first switch group (here, the switch group including Q5 and Q6) connected to the reference ground. The second switch group includes two second type power transistors connected in series between the output terminal of the voltage converter and the reference ground. Specifically, in this embodiment, the switch and capacitor network includes two second switch groups arranged in parallel, and each second switch group includes two second type power transistors connected in series between the output terminal of the voltage converter and the reference ground, namely transistors Q7 and Q8 connected in series, and transistors Q9 and Q10 connected in series. The switch and capacitor network further includes at least one third flying capacitor, here they are C3, C4, and C5 respectively. One ends of the third flying capacitors C3, C4, and C5 are respectively connected to one of the common connection points of the adjacent transistors (Q5 and Q6) in the first switch group connected in parallel between the output port and the reference ground and the corresponding one of the common connection points of the two transistors (Q7 and Q8, Q9 and Q10) in the second switch group, and the other ends are respectively connected to the common connection point of the transistors (Q1-Q4) connected between the input terminal and the output terminal.

[0053] As Figure 6As shown, it is a circuit diagram of a voltage converter according to the sixth embodiment of the present invention. The switch and capacitor network includes a plurality of the second type of power transistors connected in series between the second end of the first type of power transistor Q1 and the reference ground. Here, they are transistors Q2 - Q5. The second type of power transistor Q5 connected to the reference ground does not participate in forming the first switch group. The switch and capacitor network further includes N groups of flying capacitors and second type of power transistors connected in series between the switch node and the ground potential. The switch node is the common connection point between two adjacent power transistors, and N is greater than or equal to 1; N + 1 inductors, wherein, one inductor is connected between the last switch node and the positive output terminal, and the remaining inductors are connected between the common connection point of the series-connected flying capacitors and the second type of power transistors and the positive output terminal. The last switch node is the common connection point of two second type of power transistors connected in series adjacent to the reference ground.

[0054] Specifically, in this embodiment, the switch and capacitor network includes three groups of flying capacitors C6, C7, and C8 and second type of power transistors Q6, Q7, and Q8 connected in series between the switch node and the ground potential. The switch node is the common connection point between two adjacent transistors other than transistor Q5 connected in series between the input terminal and the reference ground; it further includes four inductors L01 - L04, wherein, one inductor L01 is connected between the last switch node (the common connection point of transistor Q4 and transistor Q4) and the positive output terminal, and the remaining inductors L02 - L04 are connected between the common connection point of the series-connected flying capacitors C6, C7, and C8 and the second type of power transistors Q6, Q7, and Q8 and the positive output terminal.

[0055] As Figure 7 As shown, it is a circuit diagram of a voltage converter according to the seventh embodiment of the present invention. The switch and capacitor network includes a plurality of the second type of power transistors connected in series between the second end of the first type of power transistor Q1 and the reference ground. Here, they are transistors Q2 - Q5. Among them, the second type of power transistor Q5 connected to the reference ground does not participate in forming the first switch group. The switch and capacitor network further includes: a first type of flying capacitor and a second type of power transistor connected in series between the switch node and the ground potential. The switch node is the common connection point between two adjacent power transistors; a first type of inductor connected between the common connection point of the series-connected first type of flying capacitor and the second type of power transistor and the positive output terminal; a second type of inductor connected between the last switch node and the positive output terminal; a second type of flying capacitor connected between the switch node and one end of the second type of inductor, wherein, the last switch node is the common connection point of two second type of power transistors connected in series adjacent to the reference ground.

[0056] Specifically, in this embodiment, the first end of the second-type power transistor Q5 is the first node. The switch and capacitor network includes a second-type power transistor Q6, first-type flying capacitors C9 and C10, a second-type flying capacitor C11, and a first-type inductor L05. Among them, the second-type power transistor Q6 is coupled between the positive output terminal of the voltage converter and the reference ground, and the first end of the second-type power transistor Q6 is the second node; the first-type flying capacitors C9 and C10 are respectively connected between the second ends of the other odd-numbered transistors connected in series between the input terminal and the reference ground except transistor Q5 and the second node; the second-type flying capacitor C11 is connected between the second ends of the other even-numbered transistors connected in series between the input terminal and the reference ground except transistor Q5 and the first node. The first node and the second node are respectively connected to the positive output terminal through a magnetic element.

[0057] Before the voltage converter in the above-described embodiment is started or just after it is started, the voltage borne by the first-type power transistor is the input voltage of the voltage converter, and the path from the second end of the first-type power transistor to the reference ground through the switch and capacitor network is at zero potential. The above-mentioned flying capacitors are all located outside the first wafer and the second wafer, and are connected to the first wafer and the second wafer by connecting to the corresponding switch node pins. Each magnetic element is connected to the first wafer and the second wafer by connecting to the switch node pins and output pins of the two corresponding multiplexed power transistors.

[0058] According to the integrated driver provided by the present invention, which is applied to a voltage converter including a switched-capacitor conversion circuit, when the voltage converter is just started, the voltage borne by the first-type power transistor is the input voltage. By setting the first-type power transistor as a GaN transistor, the safety of the first-type power transistor is made more reliable. At the same time, by setting the second-type power transistor as an Si transistor, the system of the integrated driver has higher efficiency.

[0059] As described above in accordance with the embodiments of the present invention, these embodiments do not describe all the details in detail, nor do they limit the invention to the specific embodiments described. Obviously, many modifications and variations can be made according to the above description. The present specification selects and specifically describes these embodiments in order to better explain the principles and practical applications of the present invention, so that those skilled in the art can make good use of the present invention and its modifications based on the present invention. The present invention is only limited by the claims and their full scope and equivalents.

Claims

1. An integrated driver, applied to a voltage converter including a switched-capacitor conversion circuit, comprising: A first die, including power transistors of a first type; A second die, including at least one power transistor of a second type, wherein the breakdown voltage withstand performance of the power transistors of the first type is higher than that of the power transistors of the second type; The first die and the second die are serially coupled between the high potential end and the low potential end of the voltage converter, such that the power transistors of the first type receive high voltage signals; The on-resistance of the power transistors of the first type is less than that of the power transistors of the second type, the parasitic capacitance of the power transistors of the first type is less than that of the power transistors of the second type, and the power transistors of the first type and the power transistors of the second type cooperate to regulate the output voltage of the voltage converter.

2. The integrated driver according to claim 1, wherein The power transistors of the first type are configured as GaN transistors.

3. An integrated driver, applied to a voltage converter including a switched-capacitor conversion circuit, comprising: A first die, including power transistors of a first type and at least one power transistor of a second type, wherein the breakdown voltage withstand performance of the power transistors of the first type is higher than that of the power transistors of the second type; The first die is coupled between the high potential end and the low potential end of the voltage converter, such that the power transistors of the first type receive high voltage signals; The on-resistance of the power transistors of the first type is less than that of the power transistors of the second type, the parasitic capacitance of the power transistors of the first type is less than that of the power transistors of the second type, and the power transistors of the first type and the power transistors of the second type cooperate to regulate the output voltage of the voltage converter.

4. The integrated driver according to claim 3, wherein, The power transistors of the first type and at least one of the power transistors of the second type share a substrate.

5. The integrated driver according to claim 3, wherein, The power transistors of the first type are Si-based GaN power transistors.

6. The integrated driver according to claim 1 or 3, wherein the breakdown voltage withstand performance of the power transistors of the first type is the drain-source breakdown voltage of the power transistors of the first type, and the breakdown voltage withstand performance of the power transistors of the second type is the drain-source breakdown voltage of the power transistors of the second type.

7. The integrated driver according to claim 1 or 3, wherein, The power transistors of the second type are configured as Si transistors.

8. The integrated driver according to claim 1 or 3, wherein, The voltage converter includes: The power transistors of the first type, whose first ends are connected to the input end of the voltage converter; and A switch and a capacitor network, connected between the second ends of the power transistors of the first type and the reference ground.

9. The integrated driver according to claim 8, wherein, The maximum voltage borne by the power transistors of the first type is the input voltage of the voltage converter.

10. The integrated driver according to claim 8, wherein, Before the voltage converter starts up, the voltage borne by the power transistors of the first type is greater than the voltage borne by the power transistors of the second type.

11. The integrated driver according to claim 8, wherein, Before the voltage converter starts up, the path from the second ends of the power transistors of the first type, through the switch and the capacitor network, to the reference ground is at zero potential.

12. The integrated driver according to claim 8, wherein, The voltage borne by the power transistors of the first type when the voltage converter is operating normally is less than the voltage borne by the power transistors of the first type before the voltage converter starts up.

13. The integrated driver according to claim 8, wherein, The switch and capacitor network includes a plurality of the second type of power transistors connected in series between the second end of the first type of power transistor and the reference ground.

14. The integrated driver according to claim 13, wherein, The switch and capacitor network further includes at least one set of two second type of power transistors connected in series between the output terminal of the voltage converter and the reference ground and arranged in parallel.

15. The integrated driver according to claim 13, wherein, The switch and capacitor network further includes: N sets of flying capacitors and second type of power transistors connected in series between a switching node and the ground potential, where the switching node is a common connection point between two adjacent power transistors, and N is greater than or equal to 1; N + 1 inductors, where one inductor is connected between the last switching node and the positive output terminal, and the remaining inductors are connected between the common connection point of the series-connected flying capacitors and second type of power transistors and the positive output terminal, and the last switching node is the common connection point of two second type of power transistors connected in series adjacent to the reference ground.

16. The integrated driver according to claim 13, wherein, The switch and capacitor network further includes: a first type of flying capacitor and a second type of power transistor connected in series between a switching node and the ground potential, where the switching node is a common connection point between two adjacent power transistors; a first type of inductor connected between the common connection point of the series-connected first type of flying capacitor and second type of power transistor and the positive output terminal; a second type of inductor connected between the last switching node and the positive output terminal; a second type of flying capacitor connected between the switching node and one end of the second type of inductor, where the last switching node is the common connection point of two second type of power transistors connected in series adjacent to the reference ground.

17. The integrated driver according to claim 14, wherein, The voltage converter further includes at least one flying capacitor, and at least part of the flying capacitors are connected in parallel with the corresponding power transistors.

18. The integrated driver according to any one of claims 15-17, wherein, The flying capacitors are located outside the first wafer and the second wafer.

19. The integrated driver according to claim 18, wherein, The flying capacitors are connected to the first wafer and the second wafer by connecting to the corresponding switching node pins.

20. The integrated driver according to claim 8, wherein the voltage converter further includes a switched-mode power stage circuit, the switched-mode power stage circuit includes at least one magnetic element, and the switched-mode power stage circuit multiplexes at least two of the second type of power transistors or one of the first type of power transistor and one of the second type of power transistor.

21. The integrated driver according to claim 20, wherein, The at least one magnetic element is encapsulated above the first wafer and the second wafer.

22. The integrated driver according to claim 20, wherein, Each of the at least one magnetic elements is connected to the first wafer and the second wafer by connecting to the switching node pins and the output pins of the two corresponding multiplexed power transistors.

23. The integrated driver according to claim 20, further includes a control circuit configured to control the multiplexed power transistors in a PWM mode, a PFM mode, or a PWM / PFM hybrid mode to adjust the output voltage.

24. The integrated driver according to claim 23, wherein, The control circuit is located on the first wafer or the second wafer.

25. The integrated driver according to claim 23, wherein, The control circuit is located on a third wafer.

26. A voltage converter, including the integrated driver according to claim 1 or 3, wherein, The first type of power transistor has its first end connected to the input end of the voltage converter, and further includes a switch and a capacitor network, and the switch and the capacitor network are connected between the second end of the first type of power transistor and the reference ground.

27. The voltage converter according to claim 26, wherein, The switch and the capacitor network include a plurality of the second type of power transistors connected in series between the second end of the first type of power transistor and the reference ground.

28. The voltage converter according to claim 27, wherein, It further includes a switched power stage circuit, and the switched power stage circuit includes at least one magnetic element, and multiplexes two of the second type of power transistors or one of the first type of power transistor and one of the second type of power transistor.

Images