Substrate Processing Apparatus and Substrate Processing Method

Abstract

The present invention provides a substrate processing apparatus and a substrate processing method. A substrate processing apparatus according to an aspect of the present invention includes a holding unit, a nozzle arm, and an alignment mechanism. The holding unit holds a substrate. The nozzle arm has a nozzle for supplying a processing liquid to a peripheral portion of the substrate. The alignment mechanism is provided on the nozzle arm and is configured to align the position of the substrate with a set position in the holding unit. The present invention can etch a peripheral portion of a substrate with high precision.

Description

Technical Field

[0001] Embodiments of the present invention relate to a substrate processing apparatus and a substrate processing method. Background Art

[0002] Conventionally, a technique for etching a peripheral portion of a substrate such as a semiconductor wafer (hereinafter also referred to as a wafer) with a processing liquid has been known (see Patent Document 1).

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2013-168429. Summary of the Invention

[0006] Technical Problem to be Solved by the Invention

[0007] The present invention provides a technique capable of etching a peripheral portion of a substrate with high precision.

[0008] Technical Means for Solving the Problem

[0009] A substrate processing apparatus according to an aspect of the present invention includes a holding unit, a nozzle arm, and an alignment mechanism. The holding unit holds a substrate. The nozzle arm has a nozzle for supplying a processing liquid to a peripheral portion of the substrate. The alignment mechanism is provided on the nozzle arm and is configured to align the position of the substrate with a set position in the holding unit.

[0010] Advantageous Effects of the Invention

[0011] According to the present invention, a peripheral portion of a substrate can be etched with high precision. Brief Description of the Drawings

[0012] Figure 1 It is a schematic diagram showing the structure of a substrate processing apparatus according to an embodiment.

[0013] Figure 2 It is a schematic diagram showing the structure of a substrate processing apparatus according to an embodiment.

[0014] Figure 3 It is a perspective view showing the structure of a nozzle arm according to an embodiment.

[0015] Figure 4 It is a perspective view showing the structure of a nozzle arm according to an embodiment.

[0016] Figure 5 It is a diagram for explaining the operation of an alignment mechanism according to an embodiment.

[0017] Figure 6A It is a schematic diagram showing a step of substrate processing according to an embodiment.

[0018] Figure 6B It is a schematic diagram showing a step of substrate processing of an embodiment.

[0019] Figure 6C It is a schematic diagram showing a step of substrate processing of an embodiment.

[0020] Figure 6D It is a schematic diagram showing a step of substrate processing of an embodiment.

[0021] Figure 6E It is a schematic diagram showing a step of substrate processing of an embodiment.

[0022] Figure 6F It is a schematic diagram showing a step of substrate processing of an embodiment.

[0023] Figure 7A It is a schematic diagram showing a step of substrate processing of a modified example of an embodiment.

[0024] Figure 7B It is a schematic diagram showing a step of substrate processing of a modified example of an embodiment.

[0025] Figure 7C It is a schematic diagram showing a step of substrate processing of a modified example of an embodiment.

[0026] Figure 7D It is a schematic diagram showing a step of substrate processing of a modified example of an embodiment.

[0027] Figure 7E It is a schematic diagram showing a step of substrate processing of a modified example of an embodiment.

[0028] Figure 7F It is a schematic diagram showing a step of substrate processing of a modified example of an embodiment.

[0029] Figure 8 It is a perspective view showing the structure of a nozzle of an embodiment.

[0030] Figure 9 It is a schematic diagram showing the structure of a nozzle head of an embodiment.

[0031] Figure 10 It is a cross-sectional view showing the internal structure of a nozzle of an embodiment.

[0032] Figure 11 It is a flowchart showing the sequence of substrate processing performed by a substrate processing apparatus of an embodiment.

[0033] Figure 12 It is a flowchart showing the sequence of substrate processing performed by a substrate processing apparatus of a modified example of an embodiment.

[0034] Explanation of Reference Numerals

[0035] W Wafer (an example of a substrate)

[0036] 1 Substrate processing apparatus

[0037] 20 Holding part

[0038] 30 Upper surface supply part

[0039] 31 Nozzle arm

[0040] 33 Alignment mechanism

[0041] 35 Nozzle

[0042] 35a Connection part

[0043] 35c Bending part

[0044] 35d Extension part

[0045] 35f Discharge port

[0046] 35g First flow path

[0047] 35h Second flow path

[0048] 41 Nozzle arm

[0049] 43 Alignment mechanism

[0050] 45 Nozzle

[0051] 101 Control part

[0052] C1, C2 Centers

[0053] P1, P2 Discharge positions. Detailed Description of the Invention

[0054] Hereinafter, with reference to the drawings, embodiments of the substrate processing apparatus and the substrate processing method disclosed in the present invention will be described in detail. In addition, the present invention is not limited to the following embodiments. Also, it should be noted that the drawings are schematic diagrams, and there are cases where the dimensional relationships of the respective elements, the ratios of the respective elements, etc. are different from the actual ones. Moreover, there are also cases where the dimensional relationships and ratios are different between the drawings.

[0055] In addition, in the following embodiments, the same reference numerals are assigned to the same parts, and redundant descriptions are omitted. Further, in the respective drawings referred to below, in order to make the description easier to understand, an orthogonal coordinate system in which the X-axis direction, the Y-axis direction, and the Z-axis direction orthogonal to each other are defined, and the positive direction of the Z-axis is set as the vertically upward direction is sometimes shown. Further, the rotational direction about the vertical axis is sometimes referred to as the θ direction.

[0056] Conventionally, a technique has been known in which a peripheral portion of a substrate such as a semiconductor wafer (hereinafter also referred to as a wafer) is etched with a processing liquid. In the etching process of the peripheral portion, it is important that the substrate is correctly aligned with the holding portion without eccentricity.

[0057] On the other hand, in a conventional substrate processing apparatus, an alignment mechanism for aligning the substrate and a nozzle for discharging the processing liquid from the substrate are provided on different arms, respectively. Therefore, a deviation occurs in the relative position of the nozzle with respect to the alignment mechanism.

[0058] As a result, even if the alignment is performed with high precision by the alignment mechanism, there are cases where the processing liquid cannot be discharged with high precision from the peripheral portion of the substrate. In this case, it is difficult to perform etching on the peripheral portion with high precision.

[0059] Therefore, a technique capable of solving the above technical problems and etching the peripheral portion of the substrate with high precision is desired.

[0060] <Overall Structure of Substrate Processing Apparatus>

[0061] First, with reference to Figure 1 and Figure 2 , the structure of the substrate processing apparatus 1 of the embodiment will be described. Figure 1 and Figure 2 are schematic views showing the structure of the substrate processing apparatus 1 of the embodiment.

[0062] As shown in Figure 1 and Figure 2 , the substrate processing apparatus 1 of the embodiment includes a processing container 10, a holding portion 20, an upper surface supply portion 30, a lower cup-shaped body 50, a lower surface supply portion 60, an outer cup-shaped body 70, and a heating mechanism 80.

[0063] The processing container 10 houses the holding portion 20, the upper surface supply portion 30, the lower cup-shaped body 50, the lower surface supply portion 60, the outer cup-shaped body 70, and the heating mechanism 80.

[0064] The holding portion 20 can hold the wafer W rotatably and can raise and lower the held wafer W. Specifically, as shown in Figure 2As shown, the holding unit 20 includes a vacuum chuck 21, a shaft portion 22, and a drive unit 23. The vacuum chuck 21 adsorbs and holds the wafer W by evacuating. The vacuum chuck 21 has a smaller diameter than the wafer W and adsorbs and holds the central portion of the lower surface of the wafer W.

[0065] The shaft portion 22 horizontally supports the vacuum chuck 21 at the front end portion. The drive unit 23 is connected to the root end portion of the shaft portion 22. The drive unit 23 rotates the shaft portion 22 about the vertical axis and raises and lowers the shaft portion 22 and the vacuum chuck 21 supported by the shaft portion 22. Thereby, the drive unit 23 can rotate the wafer W held by the vacuum chuck 21 and can raise and lower the wafer W.

[0066] As Figure 1 shown, the upper surface supply unit 30 supplies a processing liquid to the peripheral portion of the upper surface of the wafer W, thereby etching the peripheral portion of the upper surface of the wafer W. Thereby, for example, a film formed on the peripheral portion of the upper surface of the wafer W can be removed, or the peripheral portion of the upper surface of the wafer W can be cleaned.

[0067] In addition, the peripheral portion of the upper surface of the wafer W means an annular region of the upper surface of the wafer W having a width of, for example, about 1 to 5 mm from the end face.

[0068] The upper surface supply unit 30 includes a nozzle arm 31 and a nozzle arm 41. The nozzle arm 31 and the nozzle arm 41 are arranged so as to face each other with the holding unit 20 therebetween in a plan view.

[0069] The nozzle arm 31 includes a liquid supply unit 32, an alignment mechanism 33, and a moving mechanism 34. The nozzle arm 31 extends in the horizontal direction (here, the Y-axis direction) and supports the liquid supply unit 32 and the alignment mechanism 33 at the front end portion.

[0070] The liquid supply unit 32 has a nozzle 35, and supplies a processing liquid such as a chemical solution or a rinsing liquid to the nozzle 35. As the chemical solution, for example, hydrofluoric acid (HF), diluted hydrofluoric acid (DHF), fluonitric acid, etc. can be used. In addition, fluonitric acid is a mixed solution of hydrofluoric acid (HF) and nitric acid (HNO3). Further, as the rinsing liquid, for example, DIW (deionized water) can be used.

[0071] The alignment mechanism 33 aligns the position of the wafer W with the position set in the holding unit 20. In addition, in the present invention, "set" means "predetermined". For example, the alignment mechanism 33 aligns the center C2 of the wafer W (refer to Figure 5 ) with the center C1 of the rotation axis in the holding unit 20 (refer to Figure 5 ).

[0072] Thereby, in the embodiment, the wafer W can be arranged with high precision so as not to be eccentric on the holding unit 20. The details of the alignment mechanism 33 will be described later.

[0073] The moving mechanism 34 is connected to the root end portion of the nozzle arm 31. The moving mechanism 34 moves the nozzle arm 31 in, for example, the horizontal direction (here, the X-axis direction), and raises and lowers the nozzle arm 31. The nozzle 35 is disposed above the wafer W with the discharge port facing downward, and discharges the processing liquid onto the upper surface of the wafer W.

[0074] The nozzle arm 41 has a liquid supply portion 42, an alignment mechanism 43, and a moving mechanism 44. The nozzle arm 41 extends in the horizontal direction (here, the Y-axis direction), and supports the liquid supply portion 42 and the alignment mechanism 43 at the front end portion. The liquid supply portion 42 has a nozzle 45, and supplies the processing liquid to the nozzle 45.

[0075] The alignment mechanism 43 aligns the position of the wafer W with the position set in the holding portion 20. For example, the alignment mechanism 43 aligns the center C2 of the wafer W with the center C1 of the rotation axis of the holding portion 20. Thus, in the embodiment, the wafer W can be accurately arranged on the holding portion 20 without eccentricity. Details of the alignment mechanism 43 will be described later.

[0076] The moving mechanism 44 is connected to the root end portion of the nozzle arm 41. The moving mechanism 44 moves the nozzle arm 41 in, for example, the horizontal direction (here, the X-axis direction), and raises and lowers the nozzle arm 41. The nozzle 45 is disposed above the wafer W with the discharge port facing downward, and discharges the processing liquid onto the upper surface of the wafer W.

[0077] The lower cup-shaped body 50 is an annular member disposed outside the heating mechanism 80 so as to cover the lower part of the peripheral portion of the wafer W. The lower cup-shaped body 50 is formed of a material with strong chemical resistance such as fluororesin such as PTFE (polytetrafluoroethylene), PFA (Perfluoroalkoxy Alkane), etc.

[0078] The lower surface supply portion 60 supplies the processing liquid to the peripheral portion of the lower surface of the wafer W, thereby etching the peripheral portion of the lower surface of the wafer W. Thus, for example, a film formed on the peripheral portion of the lower surface of the wafer W can be removed, or the peripheral portion of the lower surface of the wafer W can be cleaned.

[0079] In addition, the peripheral portion of the lower surface of the wafer W refers to an annular region on the lower surface of the wafer W having a width of, for example, about 1 to 5 mm from the end face.

[0080] As Figure 2 shown, the lower surface supply portion 60 has a lower surface nozzle 61, a pipe 62, a valve 63, a flow regulator 64, and a processing liquid supply source 65. The lower surface nozzle 61 is disposed below the wafer W, and discharges the processing liquid upward toward the peripheral portion of the lower surface of the wafer W.

[0081] The pipe 62 connects the lower surface nozzle 61 to the processing liquid supply source 65. A valve 63 is provided in the middle of the pipe 62 to open and close the pipe 62. A flow regulator 64 is provided in the middle of the pipe 62 to adjust the flow rate of the processing liquid flowing in the pipe 62. The processing liquid supply source 65 is, for example, a tank for storing the processing liquid.

[0082] In addition, the lower surface supply unit 60 may also have a moving mechanism for moving the lower surface nozzle 61 in the horizontal direction. In this case, the lower surface supply unit 60 can move the lower surface nozzle 61 between the processing position below the wafer W and the retracted position outside the wafer W.

[0083] The outer cup-shaped body 70 is an annular member provided so as to surround the outside of the wafer W, and is used to receive the processing liquid and the like scattered from the wafer W. The outer cup-shaped body 70 is formed of the same highly chemical-resistant material as the lower cup-shaped body 50.

[0084] A drain port 71 is formed at the bottom of the outer cup-shaped body 70. The processing liquid and the like received by the outer cup-shaped body 70 are stored in the space formed by the outer cup-shaped body 70 and the lower cup-shaped body 50, and then discharged to the outside of the substrate processing apparatus 1 from the drain port 71.

[0085] The heating mechanism 80 is disposed below the wafer W and outside the holding unit 20. Specifically, the heating mechanism 80 is disposed between the holding unit 20 and the lower cup-shaped body 50.

[0086] The heating mechanism 80 supplies the heated fluid to the lower surface of the wafer W held by the holding unit 20, thereby heating the peripheral portion of the lower surface of the wafer W. Specifically, as Figure 1 shown, the heating mechanism 80 has a plurality of discharge ports 81 arranged in the circumferential direction of the wafer W, and supplies the heated fluid to the lower surface of the wafer W from the plurality of discharge ports 81.

[0087] In addition, the substrate processing apparatus 1 of the embodiment has a control device 100. The control device 100 is, for example, a computer, and includes a control unit 101 and a storage unit 102.

[0088] The storage unit 102 is implemented by, for example, semiconductor storage elements such as RAM and flash memory, or storage devices such as hard disks and optical discs, and stores programs for controlling various processes executed in the substrate processing apparatus 1.

[0089] The control unit 101 includes a microcomputer having a CPU (Central Processing Unit), a ROM (ReadOnly Memory), a RAM (Random Access Memory), input / output ports, and various circuits. The control unit 101 controls the operation of the substrate processing apparatus 1 by reading and executing a program stored in the storage unit 102.

[0090] In addition, the program can also be recorded on a computer-readable storage medium and installed from the storage medium into the storage unit 102 of the control device 100. Examples of computer-readable storage media include a hard disk (HD), a floppy disk (FD), a compact disc (CD), a magneto-optical disc (MO), a memory card, and the like.

[0091] <Structure and Operation of Nozzle Arms>

[0092] Next, with reference to Figures 3 - 5 , the structures and operations of the nozzle arms 31 and 41 will be described. Figure 3 FIG. is a perspective view showing the structure of the nozzle arm 31 according to the embodiment.

[0093] As Figure 3 shown, the alignment mechanism 33 has a main body portion 33a and two rollers 33b and 33c. The main body portion 33a is supported by the nozzle arm 31 and supports the rollers 33b and 33c.

[0094] The rollers 33b and 33c are arranged substantially horizontally with respect to each other and along the circumferential direction of the wafer W. Thus, the main body portion 33a can bring the side surfaces of the rollers 33b and 33c into contact with the end surfaces of the wafer W.

[0095] The nozzle 35 is arranged so as to extend downward from the liquid supply portion 32 located on the side portion of the alignment mechanism 33. That is, the nozzle 35 is located below the alignment mechanism 33. The detailed structure of the nozzle 35 will be described later.

[0096] Figure 4 FIG. is a perspective view showing the structure of the nozzle arm 41 according to the embodiment. As Figure 4 shown, the alignment mechanism 43 has a main body portion 43a, a roller 43b, a plate portion 43c, and a sensor 43d.

[0097] The main body portion 43a is supported by the nozzle arm 41 so as to be movable in the radial direction of the wafer W and supports the roller 43b. In addition, the main body portion 43a can bring the side surface of the roller 43b into contact with the end surface of the wafer W.

[0098] The plate portion 43c is substantially plate-shaped and extends from the main body portion 43a in a direction perpendicular to the radial direction of the wafer W. The sensor 43d is disposed so as to face one main surface formed on the plate portion 43c, and can measure the distance D from it to the plate portion 43c (refer to Figure 5 ).

[0099] The nozzle 45 is disposed so as to extend downward from the liquid supply portion 42 located on the side portion of the alignment mechanism 43 to the alignment mechanism 43. That is, the nozzle 45 is located below the alignment mechanism 43. In addition, the nozzle 45 has the same structure as the nozzle 35.

[0100] Figure 5 It is a diagram for explaining the operations of the alignment mechanisms 33 and 43 of the embodiment. In addition, in Figure 5 , for easy understanding, the sizes of the alignment mechanisms 33 and 43 relative to the wafer W and the holding portion 20 are shown enlarged.

[0101] As Figure 5 shown, in the substrate processing apparatus 1, the alignment mechanism 33 and the alignment mechanism 43 are disposed so as to face each other with the holding portion 20 interposed therebetween. In addition, the midpoint 33d between the rollers 33b and 33c in the alignment mechanism 33, and the front end portion 43e of the roller 43b in the alignment mechanism 43 are both disposed on the imaginary line L passing through the center C1 of the rotation axis of the holding portion 20.

[0102] Then, when the transfer arm 90 (refer to Figure 6A ) places the wafer W to be processed on the holding portion 20, the center C2 of the wafer W is disposed on this imaginary line L. Thus, the wafer W is sandwiched by the alignment mechanism 33 and the alignment mechanism 43, and the wafer W is moved along the imaginary line L, whereby the center C2 of the wafer W can be aligned with the center C1 of the holding portion 20.

[0103] On the other hand, due to manufacturing errors or other reasons, the wafer W has a tolerance of, for example, about ±0.2 mm in diameter. Therefore, for each wafer W, the distance from the side surface in contact with the alignment mechanism 33 and the alignment mechanism 43 to the center C2 varies.

[0104] Therefore, when aligning by regarding the diameters of all the wafers W as the same, there is a possibility that the center C2 of the wafer W may not face the center C1 of the holding portion 20.

[0105] Therefore, in the embodiment, when aligning the wafer W, the diameter of the wafer W is measured using the sensor 43d. In the embodiment, the reference wafer whose diameter has been correctly evaluated in advance is clamped by the alignment mechanism 33 and the alignment mechanism 43.

[0106] Then, the control unit 101 stores the distance D between the plate portion 43c and the sensor 43d when the reference wafer is clamped as a reference distance in the storage unit 102.

[0107] Next, when the wafer W to be etched is aligned with the holding unit 20, the control unit 101 measures the distance D between the plate portion 43c and the sensor 43d, and evaluates the difference from the above-mentioned reference distance. Thus, the control unit 101 can evaluate the diameter of the wafer W based on the difference from the reference distance.

[0108] For example, the diameter of the reference wafer is 300.0 mm, and the reference distance between the plate portion 43c and the sensor 43d is 1.0 mm. Then, in a certain wafer W, when the measured distance D between the plate portion 43c and the sensor 43d is 1.1 mm, it can be evaluated that the diameter of the wafer W is smaller than 300.0 mm and is 299.9 mm.

[0109] Similarly, in another wafer W, when the measured distance D between the plate portion 43c and the sensor 43d is 0.9 mm, it can be evaluated that the diameter of the wafer W is larger than 300.0 mm and is 300.1 mm.

[0110] In addition, when the diameter of the evaluated wafer W exceeds the tolerance range, the control unit 101 can determine that the rollers 33b and 33c of the alignment mechanism 33 or the roller 43b of the alignment mechanism 43 are in contact with the notch or the orientation flat of the wafer W.

[0111] Thus, in this case, the control unit 101 can also re-evaluate the diameter of the wafer W at different circumferential positions by rotating the wafer W with the holding unit 20.

[0112] In addition, in the embodiment, as Figure 5 shown, the diameters of the rollers 33b and 33c of the alignment mechanism 33 can be smaller than those of the roller 43b of the alignment mechanism 43. In this way, by making the diameters of the rollers 33b and 33c small, when the rollers 33b and 33c are in contact with the notch or the orientation flat of the wafer W, the rollers 33b and 33c can penetrate deeper into the contacting notch or the like.

[0113] Therefore, according to the embodiment, since the rollers 33b and 33c move more greatly inside the contacting notch or the like, the situation where the rollers 33b and 33c are in contact with the notch or the orientation flat can be judged more accurately.

[0114] In addition, in the embodiment, when evaluating the diameter of the wafer W, by rotating the wafer W with the holding unit 20, a plurality of different circumferential positions can be evaluated. In this way, by evaluating the diameters of a plurality of positions in the wafer W, it can be evaluated whether the wafer W is a perfect circle.

[0115] Moreover, if the wafer W is not evaluated as being perfectly round, there is a possibility that a ring-shaped region having the same width as the peripheral portion of the wafer W cannot be processed. Therefore, the user is notified that the wafer W is not perfectly round by an alarm or the like.

[0116] <Details of Substrate Processing>

[0117] Next, with reference to Figures 6A - 6F , the details of the substrate processing of the embodiment will be described. Figures 6A - 6F is a schematic diagram showing one step of the substrate processing of the embodiment.

[0118] First, as Figure 6A shown, the substrate processing apparatus 1 uses the transfer arm 90 to send the wafer W into the processing container 10 (refer to Figure 1 ), and moves it above the holding portion 20.

[0119] In addition, at this time, the substrate processing apparatus 1 moves the holding portion 20 and the nozzle arms 31, 41 to positions that do not interfere with the wafer W. Specifically, the substrate processing apparatus 1 moves the holding portion 20 to the lowered position and moves the nozzle arms 31, 41 outward.

[0120] Next, as Figure 6B shown, the substrate processing apparatus 1 moves the holding portion 20 to the raised position, transfers the wafer W from the transfer arm 90 to the holding portion 20, and places the wafer W on the holding portion 20. Then, the substrate processing apparatus 1 moves the transfer arm 90 out of the processing container 10.

[0121] In addition, at this time, the holding portion 20 may discharge gas from the gas discharge portion (not shown) of the vacuum chuck 21 (refer to Figure 2 ) to the wafer W, so that the wafer W is slightly suspended on the vacuum chuck 21. Thus, when aligning the wafer W, it is possible to suppress the case where the wafer W is damaged by friction with the vacuum chuck 21.

[0122] Alternatively, as Figure 6B shown, the position of the wafer W at the time of transfer from the transfer arm 90 to the holding portion 20 may be on the same plane as the alignment mechanisms 33, 43.

[0123] Next, as Figure 6C shown, the substrate processing apparatus 1 moves the nozzle arms 31, 41 inward, clamps the wafer W with the alignment mechanisms 33, 43, and performs alignment processing of the wafer W with respect to the holding portion 20. Thus, as described above, the center C2 of the wafer W (refer to Figure 5 ) is aligned with the center C1 of the holding portion 20 (refer to Figure 5 ).

[0124] Then, when the alignment process is completed, the substrate processing apparatus 1 holds the wafer W with the holding unit 20. Specifically, the substrate processing apparatus 1 holds the wafer W with the holding unit 20 by sucking the wafer W with the vacuum chuck 21 of the holding unit 20.

[0125] In addition, as Figure 6D shown, simultaneously with this holding process, the substrate processing apparatus 1 moves the nozzle arms 31 and 41 outward. Thereby, when the wafer W descends, it is possible to prevent the wafer W from interfering with the nozzle arms 31 and 41.

[0126] Next, as Figure 6E shown, the substrate processing apparatus 1 moves the holding unit 20 to the descending position. Thereby, the wafer W is disposed below the nozzles 35 and 45.

[0127] Next, as Figure 6F shown, the substrate processing apparatus 1 rotates the holding unit 20 and moves the nozzle arms 31 and 41 inward. That is, the substrate processing apparatus 1 rotates the wafer W and moves the nozzles 35 and 45 to the processing position of the wafer W (i.e., above the peripheral portion of the wafer W). Then, the substrate processing apparatus 1 discharges the processing liquid from the nozzles 35 and 45 to etch the peripheral portion of the wafer W.

[0128] Here, in the embodiment, the nozzle 35 and the alignment mechanism 33 are provided on the same nozzle arm 31, and the nozzle 45 and the alignment mechanism 43 are provided on the same nozzle arm 41. Thereby, the relative positions of the nozzles 35 and 45 with respect to the alignment mechanisms 33 and 43 do not deviate.

[0129] Thereby, by accurately aligning the wafer W with the alignment mechanisms 33 and 43, it is possible to discharge the processing liquid to the peripheral portion of the wafer W with high precision. Therefore, according to the embodiment, it is possible to etch the peripheral portion of the wafer W with high precision.

[0130] In addition, in the embodiment, since the nozzle 35 and the alignment mechanism 33 are provided on the same nozzle arm 31, and the nozzle 45 and the alignment mechanism 43 are provided on the same nozzle arm 41, it is possible to reduce the number of arms required for the substrate processing apparatus 1. Therefore, according to the embodiment, it is possible to miniaturize the substrate processing apparatus 1.

[0131] In addition, in the embodiment, the pair of nozzle arms 31 and 41 each have alignment mechanisms 33 and 43 and are arranged so as to face each other across the holding unit 20. Thereby, as Figure 5 shown, it is possible to arrange both of the alignment mechanisms 33 and 43 on the imaginary line L passing through the center C1 of the holding unit 20.

[0132] Therefore, according to the embodiment, it is possible to accurately evaluate the diameter of the wafer W using the alignment mechanisms 33 and 43, and thus it is possible to align the wafer W with the holding unit 20 with higher precision.

[0133] In addition, in the embodiment, the alignment mechanism 33 is disposed above the nozzle 35, and the alignment mechanism 43 is disposed above the nozzle 45. Accordingly, when the processing liquid is discharged from the nozzles 35 and 45 to the wafer W, it is possible to suppress contamination of the alignment mechanisms 33 and 43 due to the scattering of the processing liquid onto the alignment mechanisms 33 and 43.

[0134] In addition, in the embodiment, as Figure 5 shown, in a plan view, the discharge position P1 of the processing liquid discharged from the discharge port 35f (see Figure 3 ) of the nozzle 35 (see Figure 8 ) to the wafer W may be located between the center C2 of the wafer W and the alignment mechanism 33.

[0135] In other words, in a plan view, the discharge position P1 may be disposed on the imaginary line L extending from the center C2 of the wafer W toward the alignment mechanisms 33 and 43.

[0136] In this way, by disposing the discharge position P1 and the alignment mechanisms 33 and 43 on the same axis, it is possible to discharge the processing liquid from the nozzle 35 to the peripheral portion of the wafer W with higher precision.

[0137] Similarly, in a plan view, the discharge position P2 of the processing liquid discharged from the discharge port of the nozzle 45 (see Figure 4 ) to the wafer W may be located between the center C2 of the wafer W and the alignment mechanism 43.

[0138] In other words, in a plan view, the discharge position P2 may be disposed on the imaginary line L extending from the center C2 of the wafer W toward the alignment mechanisms 33 and 43.

[0139] In this way, by disposing the discharge position P2 and the alignment mechanisms 33 and 43 on the same axis, it is possible to discharge the processing liquid from the nozzle 45 to the peripheral portion of the wafer W with higher precision.

[0140] <Substrate Processing Variation Example>

[0141] Next, with reference to Figures 7A - 7F , a variation example of the substrate processing will be described. Figures 7A - 7F is a schematic diagram showing one step of the substrate processing of the variation example of the embodiment. In addition, in the substrate processing apparatus 1 of this variation example, the lower cup-shaped body 50 and the outer cup-shaped body 70 are configured to be able to move up and down together with the nozzle arms 31 and 41.

[0142] First, as Figure 7A shown, the substrate processing apparatus 1 moves the nozzle arms 31 and 41, the lower cup-shaped body 50, and the outer cup-shaped body 70 to the lowered position. Accordingly, it is possible to move the nozzle arms 31 and 41 to a position where they do not interfere with the wafer W.

[0143] Next, the substrate processing apparatus 1 uses the transfer arm 90 to send the wafer W into the processing container 10 (refer to Figure 1 ), and places it on the holding unit 20. Then, the substrate processing apparatus 1 moves the transfer arm 90 out of the way inside the processing container 10.

[0144] In addition, at this time, it is also possible that the holding unit 20 discharges gas to the wafer W from the gas discharge part (not shown) of the vacuum chuck 21 (refer to Figure 2 ) so that the wafer W floats slightly on the vacuum chuck 21. Thereby, when aligning the wafer W, it is possible to suppress the case where the wafer W is damaged by friction with the vacuum chuck 21.

[0145] In addition, as Figure 7B shown, the position of the wafer W at the time of handover from the transfer arm 90 to the holding unit 20 may be on the same plane as the alignment mechanisms 33 and 43.

[0146] Next, as Figure 7C shown, the substrate processing apparatus 1 moves the nozzle arms 31 and 41 inward, and clamps the wafer W with the alignment mechanisms 33 and 43, and performs alignment processing of the wafer W with respect to the holding unit 20. Thus, as described above, the center C2 of the wafer W (refer to Figure 5 ) is aligned with the center C1 of the holding unit 20 (refer to Figure 5 ).

[0147] Then, when this alignment processing is completed, the substrate processing apparatus 1 holds the wafer W with the holding unit 20. Specifically, the substrate processing apparatus 1 holds the wafer W with the holding unit 20 by sucking the wafer W with the vacuum chuck 21 of the holding unit 20.

[0148] In addition, as Figure 7D shown, simultaneously with this holding process, the substrate processing apparatus 1 moves the nozzle arms 31 and 41 outward. Thereby, when the wafer W descends, it is possible to prevent the wafer W from interfering with the nozzle arms 31 and 41.

[0149] Next, as Figure 7E shown, the substrate processing apparatus 1 moves the nozzle arms 31 and 41, the lower cup-shaped body 50, and the outer cup-shaped body 70 to the raised positions. Thereby, the wafer W is disposed below the nozzles 35 and 45.

[0150] Next, as Figure 7F shown, the substrate processing apparatus 1 rotates the holding unit 20 and moves the nozzle arms 31 and 41 inward. That is, the substrate processing apparatus 1 rotates the wafer W and moves the nozzles 35 and 45 to the processing positions of the wafer W (that is, above the peripheral portion of the wafer W). Then, the substrate processing apparatus 1 discharges the processing liquid from the nozzles 35 and 45 and etches the peripheral portion of the wafer W.

[0151] In this modification, similar to the embodiment, the nozzle 35 and the alignment mechanism 33 are provided on the same nozzle arm 31, and the nozzle 45 and the alignment mechanism 43 are provided on the same nozzle arm 41. Thus, the relative positions of the nozzles 35 and 45 with respect to the alignment mechanisms 33 and 43 do not deviate.

[0152] Thus, by accurately aligning the wafer W with the alignment mechanisms 33 and 43, the processing liquid can be discharged accurately to the peripheral portion of the wafer W. Therefore, according to the modification, the peripheral portion of the wafer W can be etched accurately.

[0153] <Structure of Nozzle>

[0154] Next, with reference to Figures 8 - 10 , the structures of the nozzles 35 and 45 of the embodiment will be described. Figure 8 is a diagram showing the structure of the nozzle 35 of the embodiment, Figure 9 is a diagram showing the structure of the nozzle head 37 of the embodiment, Figure 10 is a cross-sectional view showing the internal structure of the nozzle 35 of the embodiment.

[0155] In addition, since the structure of the nozzle 45 is the same as that of the nozzle 35, the description of the structure of the nozzle 45 will be omitted.

[0156] As Figure 8 shown, the nozzle 35 is composed of a main body portion 36 and a nozzle head 37, and the whole has a shape bent at an obtuse angle. The nozzle head 37 is an example of a discharge port member and is configured to be detachable from the main body portion 36.

[0157] In addition, the nozzle 35 has a connection portion 35a, a vertical portion 35b, a bent portion 35c, an extension portion 35d, and a fixing portion 35e provided on the main body portion 36, and a discharge port 35f provided on the nozzle head 37.

[0158] The connection portion 35a is configured to be able to be connected to the liquid supply portion 32. The vertical portion 35b is a portion extending vertically downward from the connection portion 35a. The bent portion 35c is a portion bent obliquely from the vertical portion 35b. The extension portion 35d is a portion extending obliquely downward from the bent portion 35c.

[0159] The fixing portion 35e has a mounting hole or the like, and is fixed to the liquid supply portion 32 using the mounting hole. The discharge port 35f is provided at the front end portion of the extension portion 35d (i.e., the front end portion of the nozzle 35) and is used to discharge the processing liquid supplied from the liquid supply portion 32.

[0160] As Figure 9As shown, the nozzle head 37 has a connecting portion 37a, an O-ring 37b, a screwing portion 37c, a gripping portion 37d, and an extension portion 37e. The connecting portion 37a is configured to be connectable to a first flow path 35g (see Figure 10 ) formed within the main body portion 36 in the extension portion 35d of the main body portion 36.

[0161] The O-ring 37b is used to suppress leakage of the processing liquid flowing out from the first flow path 35g to the outside when the connecting portion 37a is connected to the first flow path 35g within the main body portion 36. The screwing portion 37c is, for example, a male thread and is screwed with a female thread formed in the main body portion 36.

[0162] The gripping portion 37d is a portion for a fixing member such as a wrench to grip when the nozzle head 37 is to be attached to the main body portion 36. The extension portion 37e is a portion extending from the gripping portion 37d to the discharge port 35f.

[0163] As Figure 10 shown, a first flow path 35g formed within the main body portion 36 and a second flow path 35h formed within the nozzle head 37 are provided in the nozzle 35. Moreover, the first flow path 35g and the second flow path 35h are connected together inside the nozzle 35.

[0164] Here, in the nozzle 35 of the embodiment, an extension portion 35d is formed between the bent portion 35c and the discharge port 35f. Thereby, the distance between the bent portion 35c and the discharge port 35f can be lengthened.

[0165] Therefore, according to the embodiment, by means of vortices generated when the flow of the processing liquid is bent by the bent portion 35c, etc., the flow disorder of the processing liquid discharged from the discharge port 35f can be suppressed.

[0166] In addition, in the embodiment, a detachable nozzle head 37 is provided in the extension portion 35d of the nozzle 35. Thereby, when the discharge port 35f of the nozzle 35 is blocked by the processing liquid, it can be easily restored by replacing the nozzle head 37.

[0167] In addition, in the embodiment, as Figure 10 shown, the second flow path 35h formed in the nozzle head 37 is thinner than the first flow path 35g formed in the main body portion 36. In other words, the first flow path 35g is thicker than the second flow path. Thereby, when the processing liquid flows in the first flow path 35g within the main body portion 36, the pressure loss applied to the processing liquid can be reduced.

[0168] In addition, when the processing liquid is discharged from the nozzle head 37, the processing liquid can be made as thin as possible, so that the processing liquid can be discharged to a narrower discharge position P1.

[0169] In addition, the nozzle head 37 of the embodiment is configured such that the main body portion 36 and the nozzle head 37 are separate. Here, when forming a flow path that bends inside, such as the flow path through the bending portion 35c, the flow path must be thick enough to a certain extent to form the flow path.

[0170] In addition, if the main body portion 36 and the nozzle head 37 are integrally formed, the flow path through the extension portion 35d and the discharge port 35f and the flow path through the bending portion 35c need to be formed simultaneously. Therefore, when the main body portion 36 and the nozzle head 37 are integrally formed, it is difficult to form the flow path through the extension portion 35d and the discharge port 35f to be thin.

[0171] However, the nozzle head 37 of the embodiment is configured such that the main body portion 36 and the nozzle head 37 are separate, so the flow path through the main body portion 36 and the flow path through the nozzle head 37 do not need to be formed simultaneously.

[0172] Therefore, even when the flow path through the main body portion 36 is formed thick, the flow path of the nozzle head 37 can be formed thin.

[0173] In addition, the nozzle head 37 is configured in a spraying shape, so the flow path through the nozzle head 37 can also be in a spraying shape, and thus a thin flow path can be easily formed.

[0174] The substrate processing apparatus 1 of the embodiment includes a holding portion 20, a nozzle arm 31(41), and an alignment mechanism 33(43). The holding portion 20 can hold a substrate (wafer W). The nozzle arm 31(41) has a nozzle 35(45) that supplies a processing liquid to the peripheral portion of the substrate (wafer W). The alignment mechanism 33(43) is provided on the nozzle arm 31(41) and is used to align the position (center C2) of the substrate (wafer W) with the position (center C1) set in the holding portion 20. Thereby, the peripheral portion of the wafer W can be etched with high precision.

[0175] In addition, in the substrate processing apparatus 1 of the embodiment, there are a pair of nozzle arms 31, 41. The pair of nozzle arms 31, 41 respectively have alignment mechanisms 33, 43 and are arranged to face each other with the holding portion 20 therebetween. Thereby, the wafer W can be accurately aligned with the holding portion 20.

[0176] In addition, in the substrate processing apparatus 1 of the embodiment, the alignment mechanisms 33(43) are arranged above the nozzles 35(45). Thereby, the situation where the alignment mechanisms 33, 43 are contaminated by the processing liquid discharged from the nozzles 35, 45 can be suppressed.

[0177] Further, in the substrate processing apparatus 1 of the embodiment, when viewed from above, the discharge position P1 (P2) of the processing liquid discharged from the discharge port 35f of the nozzle 35 (45) onto the substrate (wafer W) is located between the center C2 of the substrate (wafer W) and the alignment mechanism 33 (43). Thereby, the processing liquid can be discharged onto the peripheral portion of the wafer W from the nozzles 35 and 45 with higher accuracy.

[0178] Further, in the substrate processing apparatus 1 of the embodiment, the nozzle 35 (45) has: a bent portion 35c provided between the connection portion 35a connected to the nozzle arm 31 (41) and the discharge port 35f of the processing liquid; and an extension portion 35d extending from the bent portion 35c to the discharge port 35f. Thereby, the flow disorder of the processing liquid discharged from the discharge port 35f can be suppressed by the vortex generated when the flow of the processing liquid is bent by the bent portion 35c.

[0179] Further, in the substrate processing apparatus 1 of the embodiment, the nozzle 35 has a discharge port member (nozzle head 37) detachable from the extension portion 35d. Thereby, when the discharge port 35f of the nozzle 35 is blocked by the processing liquid or the like, it can be easily restored by replacing the nozzle head 37.

[0180] Further, in the substrate processing apparatus 1 of the embodiment, the flow path (second flow path 35h) formed in the discharge port member (nozzle head 37) is thinner than the flow path (first flow path 35g) formed in the portion (main body portion 36) other than the discharge port member (nozzle head 37) in the nozzle 35. Thereby, the pressure loss can be reduced when the processing liquid flows in the main body portion 36. Moreover, when the processing liquid is discharged from the nozzle head 37, the processing liquid can be made as thin as possible, so that the processing liquid can be discharged to a narrower discharge position P1.

[0181] Further, the substrate processing apparatus 1 of the embodiment further includes a control unit 101 that controls the holding unit 20, the nozzle arm 31 (41), and the alignment mechanism 33 (43). Moreover, when the holding unit 20 is in the raised position, the control unit 101 performs alignment of the substrate (wafer W) placed on the holding unit 20 by moving the nozzle arm 31 (41) in the horizontal direction. In addition, when the holding unit 20 is in the lowered position, the control unit 101 performs liquid processing of the substrate (wafer W) placed on the holding unit 20 by moving the nozzle arm 31 (41) to the processing position. Thereby, the peripheral portion of the wafer W can be etched with high precision.

[0182] In addition, the substrate processing apparatus 1 according to the embodiment further includes a control unit 101 that controls the holding unit 20, the nozzle arm 31(41), and the alignment mechanism 33(43). Moreover, when the nozzle arm 31(41) is in the lowered position, the control unit 101 performs alignment of the substrate (wafer W) placed on the holding unit 20 by moving the nozzle arm 31(41) in the horizontal direction. In addition, when the nozzle arm 31(41) is in the raised position, the control unit 101 performs liquid processing of the substrate (wafer W) placed on the holding unit 20 by moving the nozzle arm 31(41) to the processing position. Thereby, the peripheral portion of the wafer W can be etched with high precision.

[0183] <Sequence of Substrate Processing>

[0184] Next, with reference to Figure 11 and Figure 12 , the sequence of substrate processing for the embodiment and the modification will be described. Figure 11 is a flowchart showing the sequence of substrate processing performed by the substrate processing apparatus 1 according to the embodiment.

[0185] First, the control unit 101 moves the holding unit 20 to the raised position (step S101). Next, the control unit 101 controls the transfer arm 90 and the holding unit 20 to place the wafer W on the vacuum chuck 21 of the holding unit 20 (step S102).

[0186] Next, the control unit 101 controls the nozzle arms 31, 41 and the holding unit 20, clamps the wafer W with the alignment mechanisms 33, 43, and performs alignment processing of the wafer W with respect to the holding unit 20 (step S103).

[0187] Next, the control unit 101 controls the holding unit 20 to hold the wafer W with the vacuum chuck 21 (step S104). Then, the control unit 101 moves the holding unit 20 to the lowered position (step S105).

[0188] Finally, the control unit 101 controls the nozzle arms 31, 41 and the holding unit 20, and performs liquid processing on the peripheral portion of the wafer W by bringing the nozzles 35, 45 close to the peripheral portion of the wafer W (step S106). When this step S106 ends, a series of processing is completed.

[0189] Figure 12 is a flowchart showing the sequence of substrate processing performed by the substrate processing apparatus 1 according to the modification of the embodiment.

[0190] First, the control unit 101 moves the nozzle arm 31 to the lowered position (step S201). In addition, at this step S201, the control unit 101 moves the nozzle arms 31, 41 and the lower cup 50 and the outer cup 70 integrally to the lowered position.

[0191] Next, the control unit 101 controls the transfer arm 90 and the holding unit 20 to place the wafer W on the vacuum chuck 21 of the holding unit 20 (step S202). Then, the control unit 101 controls the nozzle arms 31, 41 and the holding unit 20, and clamps the wafer W with the alignment mechanisms 33, 43 to perform the alignment process of the wafer W with respect to the holding unit 20 (step S203).

[0192] Next, the control unit 101 controls the holding unit 20 to hold the wafer W with the vacuum chuck 21 (step S204). Then, the control unit 101 raises the nozzle arms 31, 41 (step S205). In addition, at this step S205, the nozzle arms 31, 31 are raised integrally with the lower cup-shaped body 50 and the outer cup-shaped body 70.

[0193] Finally, the control unit 101 controls the nozzle arms 31, 41 and the holding unit 20 to bring the nozzles 35, 45 close to the peripheral portion of the wafer W, thereby performing liquid processing on the peripheral portion of the wafer W (step S206). When this step S206 ends, a series of processes are completed.

[0194] The substrate processing method of the embodiment includes: a step of placing (steps S102, S202), a step of aligning to a set position (steps S103, S203), a step of holding (steps S104, S204), and a step of processing (steps S106, S206). In the step of placing (steps S102, S202), the substrate (wafer W) is placed on the holding unit 20. In the step of aligning to the set position (steps S103, S203), the position (center C2) of the substrate (wafer W) is aligned with the position (center C1) set in the holding unit 20 by the alignment mechanisms 33 (43) provided on the nozzle arms 31 (41). In the step of holding (steps S104, S204), the substrate (wafer W) is held by the holding unit 20. In the step of processing (steps S106, S206), the peripheral portion of the substrate (wafer W) is processed with the processing liquid supplied from the nozzles 35 (45) provided on the nozzle arms 31 (41). Thus, the peripheral portion of the wafer W can be etched with high precision.

[0195] In addition, the substrate processing method of the embodiment includes a step of moving the holding unit 20 to the raised position (step S101) before the step of aligning to the set position (step S103). In addition, it includes a step of moving the holding unit 20 to the lowered position (step S105) after the step of aligning to the set position (step S103). Thus, the situation where the alignment mechanisms 33, 43 are contaminated can be suppressed.

[0196] In addition, the substrate processing method of the embodiment includes a step of moving the nozzle arm 31(41) to the lowered position (step S201) before the step of aligning to the set position (step S203). In addition, it includes a step of moving the nozzle arm 31(41) to the raised position (step S205) after the step of aligning to the set position (step S203). Thereby, the situation where the alignment mechanisms 33, 43 are contaminated can be suppressed.

[0197] As described above, the embodiments of the present invention have been described, but the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the gist thereof. For example, in the above-described embodiment, an example is given in which a pair of nozzle arms having nozzles and alignment mechanisms are provided in the substrate processing apparatus 1, but it is not necessarily required to provide a pair of nozzle arms having nozzles and alignment mechanisms.

[0198] For example, it may be that a nozzle arm having a nozzle and an alignment mechanism and an arm having only an alignment mechanism are provided separately in the substrate processing apparatus 1. In addition, it may be that a nozzle arm having a nozzle and an alignment mechanism and a nozzle arm having only a nozzle are provided separately in the substrate processing apparatus 1.

[0199] In addition, it may be that a nozzle arm having a nozzle and an alignment mechanism, an arm having only an alignment mechanism, and a nozzle arm having only a nozzle are provided separately in the substrate processing apparatus 1.

[0200] The embodiments disclosed this time are illustrative in all respects and should not be considered restrictive. In fact, the above-described embodiments can be specifically implemented in a variety of ways. In addition, without departing from the scope and gist of the appended claims, the above-described embodiments can also be omitted, replaced, and modified in various ways.

Claims

1. A substrate processing apparatus, characterized in that, Comprising: A holding part capable of holding a substrate; A nozzle arm having a nozzle for supplying a processing liquid to a peripheral part of the substrate; And An alignment mechanism provided on the nozzle arm for aligning the position of the substrate with a set position in the holding part, The nozzle and the alignment mechanism are provided on the same nozzle arm, The nozzle is arranged in such a way as to extend from a liquid supply part located on a side part of the alignment mechanism to a position between the alignment mechanism and the substrate.

2. The substrate processing apparatus according to claim 1, wherein: There are a pair of the nozzle arms provided, Each of the pair of nozzle arms has the alignment mechanism and is arranged to face each other with the holding part therebetween.

3. The substrate processing apparatus according to claim 1 or 2, wherein: The alignment mechanism is arranged at a position above the nozzle.

4. The substrate processing apparatus according to claim 1 or 2, wherein: When viewed from above, the discharge position of the processing liquid discharged from the discharge port of the nozzle onto the substrate is located between the center of the substrate and the alignment mechanism.

5. The substrate processing apparatus according to claim 1 or 2, wherein: The nozzle has: A bent part provided between a connection part connecting the nozzle arm and the discharge port of the processing liquid; and An extension part extending from the bent part to the discharge port.

6. The substrate processing apparatus according to claim 5, wherein: The nozzle has a discharge port member that is detachable relative to the extension part.

7. The substrate processing apparatus according to claim 6, wherein: The flow path formed in the discharge port member is thinner than the flow path formed in the part of the nozzle other than the discharge port member.

8. The substrate processing apparatus according to claim 1 or 2, wherein: It further includes a control part for controlling the holding part, the nozzle arm and the alignment mechanism, The control part, When the holding part is in the raised position, aligns the substrate placed on the holding part by moving the nozzle arm in the horizontal direction, When the holding part is in the lowered position, performs liquid processing on the substrate placed on the holding part by moving the nozzle arm to the processing position.

9. The substrate processing apparatus according to claim 1 or 2, wherein: It further includes a control part for controlling the holding part, the nozzle arm and the alignment mechanism, The control part, When the nozzle arm is in the lowered position, aligns the substrate placed on the holding part by moving the nozzle arm in the horizontal direction, When the nozzle arm is in the raised position, performs liquid processing on the substrate placed on the holding part by moving the nozzle arm to the processing position.

10. A substrate processing method, characterized in that, Comprising: A step of placing a substrate on a holding part; A step of aligning the position of the substrate with a set position in the holding part by using an alignment mechanism provided on a nozzle arm; A step of holding the substrate with the holding part; And A step of processing a peripheral part of the substrate with a processing liquid supplied from a nozzle provided on the nozzle arm, The nozzle and the alignment mechanism are provided on the same nozzle arm, The nozzle is arranged so as to extend from a liquid supply part located on a side of the alignment mechanism to a position between the alignment mechanism and the substrate.

11. The substrate processing method according to claim 10, wherein, It further includes: a step of moving the holding part to a raised position before the step of aligning with the set position; and a step of moving the holding part to a lowered position after the step of aligning with the set position.

12. The substrate processing method according to claim 10, characterized in that, It further includes: a step of moving the nozzle arm to a lowered position before the step of aligning with the set position; and a step of moving the nozzle arm to a raised position after the step of aligning with the set position.

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