Ultrasonic transceiver structure, fingerprint recognition module, display panel and display module

Abstract

The embodiments of the present application provide an ultrasonic transceiver structure, a fingerprint recognition module, a display panel and a display module. The ultrasonic transceiver structure includes: a first conductive structure, a piezoelectric structure and a second conductive structure stacked in sequence; one of the first conductive structure and the second conductive structure is used to form a gate structure of a driving device structure, and / or is used to be arranged in the same layer as the gate structure of the driving device structure. On the one hand, the embodiments of the present application can reduce the thickness of the film layer that the ultrasonic wave needs to penetrate during the ultrasonic emission and / or reception stage, thereby reducing the energy loss during the ultrasonic wave propagation process; on the other hand, the electrical signal formed by the ultrasonic wave reflected back from the valleys and ridges of the fingerprint can directly act on the gate of the driving device structure, and the obtained signal strength is stronger, which can effectively improve the sensitivity and accuracy of fingerprint recognition.

Description

Technical Field

[0001] The present application relates to the field of display technology. Specifically, the present application relates to an ultrasonic transceiver structure, a fingerprint recognition module, a display panel and a display module. Background Art

[0002] Fingerprint recognition, as a technology for identifying human biometrics, has been increasingly applied to more display products in recent years, providing more convenience for the realization of human-computer interaction (user and display product) functions, while also protecting user privacy to a greater extent.

[0003] Existing fingerprint recognition technologies are divided into optical fingerprint recognition, capacitive fingerprint recognition and ultrasonic fingerprint recognition according to their working principles. When the user's finger is greasy or dirty, the accuracy and speed of fingerprint recognition using optical or capacitive fingerprint recognition technologies will be greatly reduced, while fingerprint recognition using ultrasonic fingerprint recognition technology will not be affected by the greasy or dirty fingerprint on the finger.

[0004] However, existing ultrasonic fingerprint recognition products have the defect that it is difficult to improve the sensitivity or accuracy. Summary of the invention

[0005] In view of the shortcomings of the existing methods, the present application proposes an ultrasonic transceiver structure, a fingerprint recognition module, a display panel and a display module to solve the technical problem in the prior art that the sensitivity or accuracy of ultrasonic fingerprint recognition products is difficult to improve.

[0006] In a first aspect, an embodiment of the present application provides an ultrasonic transceiver structure, comprising: a first conductive structure, a piezoelectric structure, and a second conductive structure stacked in sequence;

[0007] One of the first conductive structure and the second conductive structure is used to form a gate structure of the driving device structure and / or is used to be arranged in the same layer as the gate structure of the driving device structure.

[0008] In a second aspect, an embodiment of the present application provides a fingerprint recognition module, comprising: a first substrate, a first driving device structure, and an ultrasonic transceiver structure as provided in the first aspect;

[0009] The first driving device structure includes a first active structure, a first gate structure and a first source-drain structure stacked in sequence;

[0010] The first active structure is located on one side of the first substrate;

[0011] The first conductive structure of the ultrasonic transceiver structure forms at least a portion of the first gate structure, and / or is disposed in the same layer as the first gate structure;

[0012] The second conductive structure of the ultrasonic transceiver structure is located on a side of the first source-drain structure close to the first gate structure, or the second conductive structure is arranged on the same layer as the first source-drain structure;

[0013] The side of the first substrate away from the first active structure is used to fit with one side of the display module.

[0014] In a third aspect, an embodiment of the present application provides a display panel, comprising: a display module, and a fingerprint recognition module as provided in the second aspect;

[0015] One side of the display film group is in contact with a side of the first substrate of the fingerprint identification module away from the first active structure.

[0016] In a fourth aspect, an embodiment of the present application provides a display module, including: a substrate, a display driver device structure, a pixel structure, and an ultrasonic transceiver structure as provided in the first aspect;

[0017] The display driver device structure includes an active structure, a gate structure and a source-drain structure stacked in sequence;

[0018] The active structure is located on one side of the substrate;

[0019] The first conductive structure of the ultrasonic transceiver structure forms at least a part of the gate structure, and / or is arranged in the same layer as the gate structure;

[0020] The second conductive structure of the ultrasonic transceiver structure is located on a side of the source-drain structure close to the gate structure, or the second conductive structure and the source-drain structure are arranged in the same layer;

[0021] The pixel structure is located on a side of the source and drain structure away from the gate structure.

[0022] In a fifth aspect, an embodiment of the present application provides a method for preparing a fingerprint recognition module, comprising:

[0023] Fabricating a first active structure on one side of the first substrate;

[0024] depositing a first insulating layer on one side of the first substrate and the first active structure;

[0025] Fabricating a first conductive structure on the first insulating layer, and making the first conductive structure form at least a portion of a first gate structure;

[0026] depositing a second insulating layer on the first insulating layer and the first conductive structure;

[0027] fabricating a piezoelectric structure on the second insulating layer;

[0028] depositing a third insulating layer on the second insulating layer and the piezoelectric structure;

[0029] forming a second conductive structure on the third insulating layer;

[0030] depositing a fourth insulating layer on the third insulating layer and the second conductive structure;

[0031] A first source-drain structure is fabricated on the fourth insulating layer.

[0032] In a sixth aspect, an embodiment of the present application provides a method for preparing a fingerprint recognition module, comprising:

[0033] Fabricating a first active structure on one side of the first substrate;

[0034] depositing a first insulating layer on one side of the first substrate and the first active structure;

[0035] Fabricating a first conductive structure on the first insulating layer, and making the first conductive structure form at least a portion of a first gate structure;

[0036] depositing a second insulating layer on the first insulating layer and the first conductive structure;

[0037] fabricating a piezoelectric structure on the second insulating layer;

[0038] depositing a third insulating layer on the second insulating layer and the piezoelectric structure;

[0039] Fabricating a second conductive structure and a first source-drain structure on the third insulating layer;

[0040] A fourth insulating layer is deposited on the third insulating layer, the second conductive structure and the first source-drain structure.

[0041] In a seventh aspect, an embodiment of the present application provides a method for preparing a display module, comprising:

[0042] An active structure is fabricated on one side of the substrate;

[0043] depositing a first insulating layer on one side of the substrate and the active structure;

[0044] Fabricating a first conductive structure on the first insulating layer, and making the first conductive layer form at least a portion of the gate structure;

[0045] depositing a second insulating layer on the first insulating layer and the first conductive structure;

[0046] fabricating a piezoelectric structure on the second insulating layer;

[0047] depositing a third insulating layer on the second insulating layer and the piezoelectric structure;

[0048] forming a second conductive structure on the third insulating layer;

[0049] depositing a fourth insulating layer on the third insulating layer and the second conductive structure;

[0050] Fabricating a source-drain structure on the fourth insulating layer;

[0051] depositing a planarization layer on the fourth insulating layer and the source-drain structure;

[0052] A pixel structure is fabricated on the flat layer.

[0053] In an eighth aspect, an embodiment of the present application provides a method for preparing a display module, comprising:

[0054] An active structure is fabricated on one side of the substrate;

[0055] depositing a first insulating layer on one side of the substrate and the active structure;

[0056] Fabricating a first conductive structure on the first insulating layer, and making the first conductive layer form at least a portion of the gate structure;

[0057] depositing a second insulating layer on the first insulating layer and the first conductive structure;

[0058] fabricating a piezoelectric structure on the second insulating layer;

[0059] depositing a third insulating layer on the second insulating layer and the piezoelectric structure;

[0060] Fabricating a second conductive structure and a source-drain structure on the third insulating layer;

[0061] depositing a planarization layer on the third insulating layer, the second conductive structure and the source-drain structure;

[0062] A pixel structure is fabricated on the flat layer.

[0063] The beneficial technical effects brought by the ultrasonic transceiver structure provided in the embodiment of the present application include: in the first conductive structure, the piezoelectric structure and the second conductive structure stacked in sequence, the first conductive structure and the second conductive structure can be used as a driving channel and a sensing channel for carrying touch signals, respectively, and the piezoelectric structure can realize the transmission and / or reception of ultrasonic waves; one of the first conductive structure and the second conductive structure is used to form a gate structure of a driving device structure, and / or is used to be arranged in the same layer as the gate structure of the driving device structure, so that at least part of the ultrasonic transceiver structure can be integrated into the driving device structure of the ultrasonic fingerprint recognition product, which can reduce the thickness of the film layer that the ultrasonic wave needs to penetrate during the ultrasonic emission and / or reception stage, thereby reducing the energy loss during the ultrasonic wave propagation process; on the other hand, the electrical signal formed by the ultrasonic wave reflected back from the valleys and ridges of the fingerprint can directly act on the gate of the driving device structure, and the obtained signal strength is stronger, which can effectively improve the sensitivity and accuracy of fingerprint recognition.

[0064] The fingerprint recognition module and its preparation method, and the display panel provided by the embodiments of the present application bring beneficial technical effects including: integrating the ultrasonic transceiver structure into the first drive device structure of the fingerprint recognition module, specifically forming the first conductive structure into at least part of the first gate structure of the first drive device structure (and / or, arranged in the same layer as the first gate structure), designing the piezoelectric structure between the first gate structure and the first source-drain structure of the first drive device structure, and arranging the second conductive structure on the side of the first source-drain structure of the first drive device structure close to the first gate structure (or, arranged in the same layer as the first source-drain structure). This can reduce the thickness of the film layer that the ultrasonic wave needs to penetrate during the ultrasonic emission and / or reception stage, thereby reducing the energy loss during the ultrasonic wave propagation process; on the other hand, the electrical signal formed by the ultrasonic wave reflected back from the valleys and ridges of the fingerprint can directly act on the gate of the first drive device structure, and the obtained signal strength is stronger, which can effectively improve the sensitivity and accuracy of fingerprint recognition; on the other hand, it can be conducive to the thinning of the fingerprint recognition module.

[0065] The display module and the preparation method thereof provided by the embodiments of the present application bring about beneficial technical effects including: integrating an ultrasonic transceiver structure into the driver device structure of the display module, specifically forming a first conductive structure into at least a portion of the gate structure of the display driver device structure (and / or, being arranged on the same layer as the gate structure), designing a piezoelectric structure between the gate structure and the source-drain structure of the display driver device structure, and arranging a second conductive structure on the side of the source-drain structure of the display driver device structure close to the gate structure (or, being arranged on the same layer as the source-drain structure). This can reduce the thickness of the film layer that the ultrasonic wave needs to penetrate during the ultrasonic emission and / or reception stage, thereby reducing the energy loss during ultrasonic wave propagation. On the other hand, the electrical signal formed by the ultrasonic wave reflected back from the valleys and ridges of the fingerprint can directly act on the gate of the display driver device structure, and the obtained signal strength is stronger, which can effectively improve the sensitivity and accuracy of fingerprint recognition. On the other hand, it can be beneficial to achieve the thinning of the display module.

[0066] Additional aspects and advantages of the present application will be partially given in the following description, which will become apparent from the following description, or will be understood through the practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0067] The aspects and advantages described and / or additionally provided by the present application will become apparent and easily understood from the following description of the embodiments in conjunction with the accompanying drawings, in which:

[0068] Figure 1 A schematic diagram of an ultrasonic transceiver structure provided in an embodiment of the present application;

[0069] Figure 2 A schematic diagram of the structure of a fingerprint recognition module provided in an embodiment of the present application;

[0070] Figure 3 A schematic diagram of the structure of another fingerprint recognition module provided in an embodiment of the present application;

[0071] Figure 4 A schematic diagram of the structure of a display panel provided in an embodiment of the present application;

[0072] Figure 5 A schematic diagram of the structure of a display module provided in an embodiment of the present application;

[0073] Figure 6 A schematic diagram of a process for preparing a fingerprint recognition module provided in an embodiment of the present application;

[0074] Figure 7 A schematic diagram of a process for developing a method for preparing a fingerprint recognition module provided in an embodiment of the present application;

[0075] Figure 8 A schematic diagram of a process for preparing another fingerprint recognition module provided in an embodiment of the present application;

[0076] Fig. 9 A schematic flow chart of another method for preparing a fingerprint recognition module provided in an embodiment of the present application;

[0077] Fig.10 A schematic diagram of a process for preparing a display module provided in an embodiment of the present application;

[0078] Fig.11 A schematic flow chart of a method for preparing a display module provided in an embodiment of the present application;

[0079] Fig.12 A schematic flow chart of another method for preparing a display module provided in an embodiment of the present application.

[0080] In the figure:

[0081] 100-ultrasonic wave transceiver structure; 101-ultrasonic wave transmitting structure; 102-ultrasonic wave receiving structure;

[0082] 110-a first conductive structure;

[0083] 120- piezoelectric structure;

[0084] 130- a second conductive structure;

[0085] 200-Fingerprint recognition module;

[0086] 210- first substrate;

[0087] 220 - first driving device structure; 221 - first active structure; 222 - first gate structure; 223 - first source-drain structure;

[0088] 230 - first buffer layer; 240 - first isolation layer; 250 - reflection layer; 260 - first insulation layer;

[0089] 300a-display module;

[0090] 310a - second substrate;

[0091] 320a - second driving device structure; 321a - second active structure; 322a - second gate structure; 323a - second source-drain structure;

[0092] 330a-pixel structure; 340a-second buffer layer; 350a-second isolation layer; 360a-second insulating layer;

[0093] 300b-display module; 301b-display area; 302b-non-display area;

[0094] 310b - substrate;

[0095] 320b-display driver device structure; 321b-active structure; 322b-gate structure; 323b-source-drain structure;

[0096] 330b-pixel structure;

[0097] 340b-buffer layer; 350b-isolation layer; 360b-insulation layer;

[0098] 400-display panel; 410-optical adhesive; 500-fingerprint;

[0099] The dotted arrow in the figure indicates the propagation direction of the ultrasonic wave. DETAILED DESCRIPTION

[0100] The present application is described in detail below, and examples of embodiments of the present application are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar components or components with the same or similar functions. In addition, if the detailed description of the known technology is unnecessary for the features of the present application shown, it will be omitted. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application, and cannot be interpreted as limiting the present application.

[0101] It will be understood by those skilled in the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as those generally understood by those skilled in the art to which this application belongs. It should also be understood that terms such as those defined in general dictionaries should be understood to have meanings consistent with those in the context of the prior art, and will not be interpreted with idealized or overly formal meanings unless specifically defined as here.

[0102] It will be understood by those skilled in the art that, unless expressly stated, the singular forms "one", "said", and "the" used herein may also include plural forms. It should be further understood that the term "comprising" used in the specification of the present application refers to the presence of the features, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, steps, operations, elements, components and / or groups thereof. It should be understood that when we refer to an element as being "connected" or "coupled" to another element, it may be directly connected or coupled to the other element, or there may be intermediate elements. In addition, the "connection" or "coupling" used herein may include wireless connection or wireless coupling. The term "and / or" used herein includes all or any unit and all combinations of one or more associated listed items.

[0103] First, several terms involved in this application are introduced and explained:

[0104] Ultrasonic wave: The frequency range of sound audible to human ear is 20Hz (Hertz) - 20KHz (kilohertz). Waves with frequency lower than 20Hz are called infrasound waves, and waves with frequency higher than 20KHz are called ultrasonic waves. The frequency is the number of vibrations completed within 1s (second).

[0105] Piezoelectric material: a functional material that can realize the mutual conversion between mechanical signals and electrical signals, mainly including quartz crystal, piezoelectric ceramics, organic PVDF (polyvinylidene fluoride) piezoelectric film and aluminum nitride, etc., with positive piezoelectric effect and inverse piezoelectric effect. When a certain force is applied to the piezoelectric material, positive and negative charges proportional to the magnitude of the applied force will appear on the surface of the material. This phenomenon is the positive piezoelectric effect of the material; when a certain voltage is applied to the piezoelectric material, the piezoelectric material will deform and vibrate, etc. This phenomenon is the inverse piezoelectric effect of the piezoelectric material.

[0106] The inventor of this application has found that ultrasound has good directionality and penetration in a straight line due to its high frequency and short wavelength. Ultrasonic fingerprint recognition mainly includes: the driving channel (Tx) receives an electrical signal and excites the piezoelectric material to deform and emit ultrasound; the ultrasound is transmitted to the valleys and ridges of the finger and then reflected, and the intensity of the ultrasound signal after reflection is different; the reflected ultrasound again excites the piezoelectric material to convert the mechanical signal into an electrical signal in the sensing channel (Rx), which is then sensed by the driving device (such as a TFT array) and imaged to achieve fingerprint recognition.

[0107] In existing ultrasonic fingerprint recognition products, the ultrasonic transceiver structure is usually equipped with a dedicated driver device structure, which has a large film thickness and a large energy loss during ultrasonic propagation, resulting in the defect that the sensitivity or accuracy of ultrasonic fingerprint recognition products is difficult to improve. In particular, for display products using ultrasonic fingerprint recognition technology, the fingerprint recognition module is usually located below the display module, and the fingerprint recognition module and the display module do not share the driver device structure. Therefore, the film thickness further increases the film thickness that the ultrasonic wave needs to pass through, increasing the energy loss during ultrasonic propagation.

[0108] The ultrasonic transceiver structure, fingerprint recognition module, display panel and display module provided in this application are intended to solve the above technical problems of the prior art.

[0109] The technical solution of the present application and how the technical solution of the present application solves the technical problem are described in detail below with specific embodiments.

[0110] The embodiment of the present application provides an ultrasonic transceiver structure 100, and the structural schematic diagram of the ultrasonic transceiver structure 100 is as shown in FIG. Figure 1 As shown, it includes: a first conductive structure 110, a piezoelectric structure 120 and a second conductive structure 130 stacked in sequence.

[0111] One of the first conductive structure 110 and the second conductive structure 130 is used to form a gate structure of the driving device structure and / or is used to be disposed in the same layer as the gate structure of the driving device structure.

[0112] In this embodiment, the ultrasonic transceiver structure 100 uses a first conductive structure 110, a piezoelectric structure 120, and a second conductive structure 130 stacked in sequence. The first conductive structure 110 and the second conductive structure 130 can be used as a driving channel and a sensing channel for carrying touch signals, respectively. The piezoelectric structure 120 can realize the transmission and / or reception of ultrasonic waves.

[0113] One of the first conductive structure 110 and the second conductive structure 130 is used to form a gate structure of the driving device structure, and / or is used to be arranged in the same layer as the gate structure of the driving device structure, so that at least part of the ultrasonic transceiver structure 100 can be integrated into the driving device structure of the ultrasonic fingerprint recognition product. This can reduce the thickness of the film layer that the ultrasonic wave needs to penetrate during the ultrasonic emission and / or reception stage, thereby reducing the energy loss during the ultrasonic wave propagation process; on the other hand, the electrical signal formed by the ultrasonic wave reflected back from the valley and ridge of the fingerprint 500 can directly act on the gate of the driving device structure, and the obtained signal strength is stronger, which can effectively improve the sensitivity and accuracy of fingerprint recognition.

[0114] In some possible implementations, the other one of the first conductive structure 110 and the second conductive structure 130 is configured to be disposed in the same layer as the source, drain, and electrode structures of the driving device structure.

[0115] In this embodiment, the other one of the first conductive structure 110 and the second conductive structure 130 is arranged in the same layer as the source, drain and electrode structure of the driving device structure, which can facilitate thinning of the film layer, reduce energy loss during ultrasonic propagation, and simplify the preparation process.

[0116] Based on the same inventive concept, the present embodiment provides a fingerprint recognition module 200, the structure diagram of the fingerprint recognition module 200 is as shown in Figure 2 or Figure 3 As shown, it includes: a first substrate 210, a first driving device structure 220 and any one of the ultrasonic transceiver structures 100 provided in the above embodiments.

[0117] The first driving device structure 220 includes a first active structure 221 , a first gate structure 222 , and a first source-drain structure 223 which are sequentially stacked.

[0118] The first active structure 221 is located on one side of the first substrate 210 .

[0119] The first conductive structure 110 of the ultrasonic transceiver structure 100 forms at least a portion of the first gate structure 222 , and / or is disposed in the same layer as the first gate structure 222 .

[0120] The second conductive structure 130 of the ultrasonic transceiver structure 100 is located on a side of the first source-drain structure 223 close to the first gate structure 222 , or the second conductive structure 130 and the first source-drain structure 223 are disposed on the same layer.

[0121] The side of the first substrate 210 away from the first active structure 221 is used to be attached to one side of the display module 300 a .

[0122] In this embodiment, the fingerprint recognition module 200 integrates the ultrasonic transceiver structure 100 into the first driving device structure 220 of the fingerprint recognition module 200. Specifically, the first conductive structure 110 forms at least a part of the first gate structure 222 of the first driving device structure 220 (and / or is arranged on the same layer as the first gate structure 222), the piezoelectric structure 120 is designed between the first gate structure 222 and the first source-drain structure 223 of the first driving device structure 220, and the second conductive structure 130 is arranged on the side of the first source-drain structure 223 of the first driving device structure 220 close to the first gate structure 222 (or, is arranged on the same layer as the first source-drain structure 223).

[0123] The fingerprint recognition module 200 provided in this embodiment adopts the above-mentioned solution. On the one hand, it can reduce the thickness of the film layer that the ultrasonic wave needs to penetrate during the ultrasonic emission and / or reception stage, thereby reducing the energy loss during the ultrasonic wave propagation process; on the other hand, the electrical signal formed by the ultrasonic wave reflected back from the valleys and ridges of the fingerprint 500 can directly act on the gate of the first driving device structure 220, and the obtained signal strength is stronger, which can effectively improve the sensitivity and accuracy of fingerprint recognition; on the other hand, it can be beneficial to achieve the thinning of the fingerprint recognition module 200.

[0124] The fingerprint recognition principle of the fingerprint recognition module 200 provided in this embodiment is as follows:

[0125] During the ultrasonic emission stage, the second conductive structure 130 can be used as a Tx (drive channel) electrode and given a certain voltage. At this time, the voltage of the first conductive structure 110 (first gate structure 222) is 0V (volts), and a certain potential difference is formed between the second conductive structure 130 and the first conductive structure 110. The piezoelectric structure 120 deforms and starts to vibrate and emit ultrasonic waves.

[0126] After the ultrasonic wave encounters the valleys and ridges of the finger and is reflected back, it acts on the piezoelectric structure 120, at which time the voltage of the second conductive structure 130 is 0V, and the first conductive structure 110 is not grounded. At this time, the first conductive structure 110 can be used as an Rx (sensing channel) electrode to detect the electrical signal generated by the piezoelectric structure 120, and then the fingerprint is imaged through the APS (Advanced Photo System) circuit for fingerprint recognition.

[0127] In some possible implementations, the fingerprint recognition module 200 further includes at least one of a first buffer layer 230 , a first isolation layer 240 , a reflective layer 250 , and a first insulating layer 260 .

[0128] In this embodiment, the first buffer layer 230 can reduce the impact that the fingerprint recognition module 200 may be subjected to and protect the film layers. The first isolation layer 240 can prevent water or oxygen from penetrating into the fingerprint recognition module 200 through the first substrate 210, thereby affecting the performance of the first driving device structure 220 and the light-emitting characteristics of the pixel structure 330a. The first insulating layer 260 can isolate the conductive film layers that do not need to be electrically connected.

[0129] When the fingerprint recognition module 200 further includes a first buffer layer 230 , optionally, the first buffer layer 230 is located between the first substrate 210 and the first active structure 221 .

[0130] When the fingerprint recognition module 200 further includes a first isolation layer 240 , optionally, the first isolation layer 240 is located between the first substrate 210 and the first active structure 221 .

[0131] When the fingerprint recognition module 200 further includes a reflective layer 250 , optionally, the reflective layer 250 is located on a side of the first source-drain structure 223 away from the piezoelectric structure 120 of the ultrasonic transceiver structure 100 .

[0132] When the fingerprint recognition module 200 also includes a first insulating layer 260, optionally, the first insulating layer 260 is provided between the first substrate 210 and the first gate structure 222, between the first gate structure 222 and the piezoelectric structure 120, between the piezoelectric structure 120 and the second conductive structure 130, between the second conductive structure 130 and the first source-drain structure 223, and at least one of the sides of the first source-drain structure 223 away from the second conductive structure 130.

[0133] Alternatively, the first insulating layer 260 may use silicon nitride material.

[0134] Based on the same inventive concept, the embodiment of the present application provides a display panel 400, the structural schematic diagram of the display panel 400 is as shown in FIG. Figure 4 As shown, it includes: a display module 300a, and any fingerprint recognition module 200 provided in the above embodiments.

[0135] One side of the display film group is in contact with a side of the first substrate 210 of the fingerprint recognition module 200 away from the first active structure 221 .

[0136] In this embodiment, the display panel 400 includes a display module 300a and any one of the fingerprint recognition modules 200 provided in the above embodiments, which can not only display images but also realize fingerprint recognition and associate fingerprint recognition with image display.

[0137] Since the display panel 400 provided in this embodiment adopts any one of the fingerprint recognition modules 200 provided in the above embodiments, the implementation principles are similar and will not be described again here.

[0138] In some possible implementations, such as Figure 3 As shown, the display module 300a includes a second substrate 310a, a second driving device structure 320a and a pixel structure 330a which are stacked in sequence.

[0139] The second driving device structure 320 a includes a second active structure 321 a , a second gate structure 322 a , and a second source-drain structure 323 a , which are sequentially stacked.

[0140] The pixel structure 330a is located on a side of the second source-drain structure 323a away from the second gate structure.

[0141] The second substrate 310 a is located on a side of the second active structure 321 a away from the second gate structure 322 a .

[0142] A side of the second substrate 310 a away from the second active structure 321 a is in contact with the first substrate 210 of the fingerprint recognition module 200 .

[0143] In this embodiment, the second substrate 310a of the display module 300a can be conveniently attached to the first substrate 210 of the fingerprint recognition module 200, which can simplify the assembly process of the display panel 400. The pixel structure 330a of the display module 300a is used to display a picture, and the second driving device structure 320a is used to drive the pixel structure 330a to display a specified picture.

[0144] In this embodiment, the second driving device structure 320 a of the display module 300 a and the first driving device structure 220 of the fingerprint recognition module 200 are independent of each other.

[0145] Optionally, the pixel structure 330a may include: a backlight source, a liquid crystal box and a color filter layer stacked in sequence. The first substrate 210 of the fingerprint recognition module 200 is located on the side of the backlight source away from the liquid crystal box. That is, the pixel structure 330a may adopt an LCD (Liquid Crystal Display) display structure.

[0146] Optionally, the pixel structure 330a may include: an anode layer, a light-emitting layer, a cathode layer and a color filter layer stacked in sequence. The first substrate 210 of the fingerprint recognition module 200 is located on the side of the anode layer away from the light-emitting layer. That is, the pixel structure 330a may adopt a display structure such as LED (light-emitting diode) or Micro-LED (micro-light-emitting diode) or OLED (Organic Light-Emitting Diode).

[0147] Based on the same inventive concept, the embodiment of the present application provides a display module 300b, the structural schematic diagram of the display module 300b is as shown in FIG. Figure 5 As shown, it includes: a substrate 310b, a display driving device structure 320b, a pixel structure 330b and any one of the ultrasonic transceiver structures 100 provided in the above embodiments.

[0148] The display driving device structure 320b includes an active structure 321b, a gate structure 322b and a source-drain structure 323b which are stacked in sequence.

[0149] The active structure 321b is located on one side of the substrate 310b.

[0150] The first conductive structure 110 of the ultrasonic transceiver structure 100 forms at least a portion of the gate structure 322 b and / or is disposed in the same layer as the gate structure 322 b.

[0151] The second conductive structure 130 of the ultrasonic transceiver structure 100 is located on a side of the source-drain structure 323 b close to the gate structure 322 b , or the second conductive structure 130 and the source-drain structure 323 b are disposed in the same layer.

[0152] The pixel structure 330 b is located on a side of the source-drain structure 323 b away from the gate structure 322 b .

[0153] In this embodiment, the display module 300b integrates the ultrasonic transceiver structure 100 into the driving device structure of the display module 300b, specifically, the first conductive structure 110 forms at least a portion of the gate structure 322b of the display driving device structure 320b (and / or, is arranged on the same layer as the gate structure 322b), the piezoelectric structure 120 is designed between the gate structure 322b and the source-drain structure 323b of the display driving device structure 320b, and the second conductive structure 130 is arranged on the side of the source-drain structure 323b of the display driving device structure 320b close to the gate structure 322b (or, is arranged on the same layer as the source-drain structure 323b).

[0154] The display module 300b provided in this embodiment adopts the above-mentioned scheme. On the one hand, it can reduce the thickness of the film layer that the ultrasonic wave needs to penetrate during the ultrasonic emission and / or reception stage, thereby reducing the energy loss during the ultrasonic wave propagation process; on the other hand, the electrical signal formed by the ultrasonic wave reflected back from the valleys and ridges of the fingerprint 500 can directly act on the gate of the display driver device structure 320b, and the obtained signal strength is stronger, which can effectively improve the sensitivity and accuracy of fingerprint recognition; on the other hand, it can be beneficial to achieve the thinning of the display module 300b.

[0155] In some possible implementations, the ultrasonic transceiver structure 100 corresponds to a spacing area between two adjacent pixel structures 330 b of the pixel structure 330 b.

[0156] In this embodiment, the ultrasonic transceiver structure 100 corresponds to the spacing area between two adjacent pixel structures 330b of the pixel structure 330b, that is, the ultrasonic transceiver structure 100 is set in the non-display area 302b of the display module 300b, which can increase the integration and integration of the fingerprint recognition function and the display engineering, and can also control the area and size of the fingerprint 500 in design and process.

[0157] In some possible implementations, the ultrasonic transceiver structure 100 includes: an ultrasonic transmitting structure 101 and an ultrasonic receiving structure 102 .

[0158] The first conductive structure 110 of the ultrasonic emission structure 101 is disposed in the same layer as the gate structure 322 b of the display driving device structure 320 b.

[0159] The first conductive structure 110 of the ultrasonic receiving structure 102 forms at least a portion of the gate structure 322 b .

[0160] In this embodiment, the ultrasonic transceiver structure 100 includes two substructures, which can facilitate the separate execution of ultrasonic transmission and reception. Specifically, the ultrasonic transmission structure 101 performs ultrasonic transmission, and the ultrasonic reception structure 102 performs ultrasonic reception, that is, neither substructure needs to operate in a time-sharing manner.

[0161] The fingerprint recognition principle of the display module 300b provided in this embodiment is as follows:

[0162] During the ultrasonic emission stage, the first conductive structure 110 in the ultrasonic emission structure 101 is used as the Tx (drive channel) electrode and is given a certain voltage. At this time, the voltage of the second conductive structure 130 in the ultrasonic emission structure 101 is 0V (volts). A certain potential difference is formed between the second conductive structure 130 and the first conductive structure 110 of the ultrasonic emission structure 101, and the piezoelectric structure 120 in the ultrasonic emission structure 101 is deformed and begins to vibrate and emit ultrasonic waves.

[0163] After the ultrasonic wave encounters the valleys and ridges of the finger and is reflected back, it acts on the piezoelectric structure 120 of the ultrasonic receiving structure 102. The voltage of the second conductive structure 130 of the ultrasonic receiving structure 102 is 0V, and the first conductive structure 110 (gate structure 322b) of the ultrasonic receiving structure 102 is not grounded. The first conductive structure 110 (gate structure 322b) of the ultrasonic receiving structure 102 serves as the Rx (sensing channel) electrode to detect the electrical signal generated by the piezoelectric structure 120 of the ultrasonic receiving structure 102, and then the fingerprint is imaged through the APS circuit for fingerprint recognition.

[0164] In some possible implementations, the second conductive structure 130 of the ultrasonic transmitting structure 101 and the second conductive structure 130 of the ultrasonic receiving structure 102 are disposed in the same layer.

[0165] In this embodiment, the second conductive structures 130 of the ultrasonic transmitting structure 101 and the ultrasonic receiving structure 102 are disposed in the same layer, which can simplify the manufacturing process and is also conducive to the thinning of the display module 300 b.

[0166] In some possible implementations, the piezoelectric structure 120 of the ultrasonic transmitting structure 101 and the piezoelectric structure 120 of the ultrasonic receiving structure 102 are arranged in the same layer.

[0167] In this embodiment, the piezoelectric structures 120 of the ultrasonic transmitting structure 101 and the ultrasonic receiving structure 102 are both arranged in the same layer, which can simplify the manufacturing process and is also conducive to the thinning of the display module 300 b.

[0168] In some possible implementations, such as Figure 5 As shown, the display module 300b further includes at least one of a buffer layer 340b, an isolation layer 350b, and an insulating layer 360b.

[0169] In this embodiment, the buffer layer 340b can reduce the impact that the display module 300b may receive and protect the film layers. The isolation layer 350b can prevent water or oxygen from penetrating into the display module 300b from below the substrate 310b, thereby affecting the performance of the display driver device structure 320b and the light-emitting characteristics of the pixel structure 330b. The insulating layer 360b can isolate the conductive film layers that do not need to be electrically connected.

[0170] In the case where the display module 300 b further includes a buffer layer 340 b , optionally, the buffer layer 340 b is located between the substrate 310 b and the active structure 321 b .

[0171] In the case where the display module 300 b further includes an isolation layer 350 b , optionally, the isolation layer 350 b is located between the substrate 310 b and the active structure 321 b .

[0172] When the display module 300b also includes an insulating layer 360b, optionally, an insulating layer 360b is provided at least one of between the substrate 310b and the gate structure 322b, between the gate structure 322b and the piezoelectric structure 120 of the ultrasonic transceiver structure 100, between the piezoelectric structure 120 and the second conductive structure 130, between the second conductive structure 130 and the source-drain structure 323b, and between the source-drain structure 323b and the pixel structure 330b.

[0173] Based on the same inventive concept, the present application embodiment provides a method for preparing a fingerprint recognition module, and the flow chart of the preparation method is as follows: Figure 6 As shown, the following steps S101-S109 are included:

[0174] S101: manufacturing a first active structure on one side of a first substrate.

[0175] S102: depositing a first insulating layer on one side of the first substrate and the first active structure.

[0176] S103: fabricating a first conductive structure on the first insulating layer, and making the first conductive structure form at least a portion of a first gate structure.

[0177] S104: depositing a second insulating layer on the first insulating layer and the first conductive structure.

[0178] S105: fabricating a piezoelectric structure on the second insulating layer.

[0179] S106: depositing a third insulating layer on the second insulating layer and the piezoelectric structure.

[0180] S107: fabricating a second conductive structure on the third insulating layer.

[0181] S108: depositing a fourth insulating layer on the third insulating layer and the second conductive structure.

[0182] S109: fabricating a first source-drain structure on the fourth insulating layer.

[0183] The present embodiment provides a method for preparing a fingerprint recognition module, which integrates an ultrasonic transceiver structure of the fingerprint recognition module into the first drive device structure of the fingerprint recognition module. Specifically, the first conductive structure forms at least a part of the first gate structure of the first drive device structure (and / or is arranged on the same layer as the first gate structure), the piezoelectric structure is designed between the first gate structure and the first source-drain structure of the first drive device structure, and the second conductive structure is arranged on a side of the first source-drain structure of the first drive device structure close to the first gate structure (or, is arranged on the same layer as the first source-drain structure).

[0184] The fingerprint recognition module obtained by the method for preparing a fingerprint recognition module provided by this embodiment can realize ultrasonic fingerprint recognition, and the fingerprint recognition has high sensitivity and accuracy.

[0185] The present application embodiment provides a method for preparing a fingerprint recognition module. The flowchart of the method is as follows: Figure 7 As shown, the following steps S201-S211 are included:

[0186] S201: depositing at least one of a first buffer layer and a first isolation layer on one side of a first substrate.

[0187] Optionally, in this step, a first buffer layer and a first isolation layer of a certain thickness may be deposited on one side of the first substrate by a PECVD (Plasma Enhanced Chemical Vapor Deposition) device. This can prevent water or oxygen from penetrating into the fingerprint recognition module through the first substrate, thereby affecting the performance of the first driving device structure and the luminescence characteristics of the pixel structure.

[0188] Optionally, before this step, a PI (Polyimide Film) organic film of a certain thickness may be coated on the glass substrate by a PI coating device to form a PI flexible first substrate.

[0189] S202: fabricating a first active structure on one side of a first substrate.

[0190] Optionally, in this step, a first active layer of a certain thickness may be deposited by a PECVD device, and patterned by photolithography and etching processes to obtain a first active structure.

[0191] S203: depositing a first insulating layer on one side of the first substrate and the first active structure.

[0192] Optionally, in this step, a PECVD device may be used to deposit an inorganic layer material (such as silicon oxide or silicon nitride) of a certain thickness as the first insulating layer.

[0193] S204: fabricating a first conductive structure on the first insulating layer, and making the first conductive structure form at least a portion of a first gate structure.

[0194] Optionally, in this step, a certain thickness of metal can be deposited as the first gate layer by using a Sputter device, and patterned by photolithography and etching processes to obtain the first gate structure.

[0195] S205: depositing a second insulating layer on the first insulating layer and the first conductive structure.

[0196] Optionally, in this step, a certain thickness of silicon nitride can be deposited as the second insulating layer by using PECVD equipment.

[0197] S206: fabricating a piezoelectric structure on the second insulating layer.

[0198] Optionally, the piezoelectric material is mainly divided into two types: inorganic piezoelectric material and organic piezoelectric material. The inorganic piezoelectric material may be selected from materials such as aluminum nitride, and the organic piezoelectric material may be selected from materials such as PVDF (polyvinylidene fluoride) polymer.

[0199] For inorganic piezoelectric materials, this step can be performed by depositing a film using PECVD equipment, and then patterning the film through photolithography and etching processes to obtain a piezoelectric structure.

[0200] For organic piezoelectric materials such as PVDF solution systems, this step can be completed by Spin Coating, and then patterned by Hard Mask to obtain a piezoelectric structure. Hard mask is mainly used in multiple photolithography processes. First, multiple photoresist images are transferred to the hard mask, and then the final pattern is etched and transferred to the piezoelectric material layer through the hard mask.

[0201] For organic piezoelectric materials, this step can also be performed by directly coating patterned PVDF through a Slot Die (slit coating) device, and then performing a polarization process on the piezoelectric material layer to give it certain piezoelectric properties.

[0202] S207: depositing a third insulating layer on the second insulating layer and the piezoelectric structure.

[0203] Optionally, in this step, a certain thickness of silicon nitride can be deposited as the third insulating layer by using PECVD equipment.

[0204] S208: fabricating a second conductive structure on the third insulating layer.

[0205] Optionally, in this step, a certain thickness of metal can be deposited as the second conductive layer by a Sputter device, and patterned by photolithography and etching processes to obtain a second conductive structure. The second conductive structure can be used as a Tx (driving channel).

[0206] S209: depositing a fourth insulating layer on the third insulating layer and the second conductive structure.

[0207] Optionally, in this step, an interlayer insulating layer of a certain thickness may be deposited by a PECVD device, and patterned by photolithography and etching processes to obtain a fourth insulating layer.

[0208] In addition, in preparation for the next step of making the first source-drain structure, this step may also include making vias for electrically connecting the first source-drain structure with the first active structure, which may specifically include: simultaneously patterning and etching the fourth insulating layer, the third insulating layer and the second insulating layer to form the aforementioned vias.

[0209] S210: fabricating a first source-drain structure on the fourth insulating layer.

[0210] Optionally, in this step, a certain thickness of metal, such as Ti (titanium) / Al (aluminum) / Ti, can be deposited by a Sputter device, and patterned by photolithography and etching processes to obtain a first source-drain structure.

[0211] S211: depositing a planarization layer on the fourth insulating layer and the first source-drain structure; and depositing a reflective layer on the planarization layer.

[0212] Optionally, in this step, a flat layer may be formed by using a coating resin material and patterned by photolithography and etching processes.

[0213] Optionally, in this step, a certain thickness of Ag (silver) paste can be printed on the flat layer by screen printing as a reflective layer. The function of the Ag paste reflective layer is to reflect the ultrasonic signal transmitted to the bottom to the top of the screen.

[0214] Optionally, in this step, a certain thickness of epoxy resin may be printed on the reflective layer through a screen printing process as an insulating layer to protect the device.

[0215] Based on the same inventive concept, the present application embodiment provides another method for preparing a fingerprint recognition module, and the flow chart of the preparation method is as follows: Figure 8 As shown, the following steps S301-S308 are included:

[0216] S301: fabricating a first active structure on one side of a first substrate.

[0217] S302: depositing a first insulating layer on one side of the first substrate and the first active structure.

[0218] S303: fabricating a first conductive structure on the first insulating layer, and making the first conductive structure form at least a portion of a first gate structure.

[0219] S304: depositing a second insulating layer on the first insulating layer and the first conductive structure.

[0220] S305: fabricating a piezoelectric structure on the second insulating layer.

[0221] S306: depositing a third insulating layer on the second insulating layer and the piezoelectric structure.

[0222] S307: fabricating a second conductive structure and a first source-drain structure on the third insulating layer.

[0223] S308: depositing a fourth insulating layer on the third insulating layer, the second conductive structure and the first source-drain structure.

[0224] The principle and beneficial effects of another method for preparing a fingerprint recognition module provided in this embodiment are basically the same as those of the aforementioned method for preparing a fingerprint recognition module, except that: after depositing a third insulating layer on the second insulating layer and the piezoelectric structure, a second conductive structure and a first source-drain structure are fabricated on the third insulating layer, and a fourth insulating layer is deposited on the third insulating layer, the second conductive structure and the first source-drain structure. That is, in this embodiment, the second conductive structure and the first source-drain structure are fabricated in the same layer, which can facilitate the thinning of the fingerprint recognition module and simplify the fabrication process.

[0225] The present application embodiment provides another method for preparing a fingerprint recognition module. The flowchart of the method is as follows: Fig. 9 As shown, the following steps S401-S410 are included:

[0226] S401: depositing at least one of a first buffer layer and a first isolation layer on one side of a first substrate.

[0227] S402: fabricating a first active structure on one side of a first substrate.

[0228] S403: depositing a first insulating layer on one side of the first substrate and the first active structure.

[0229] S404: fabricating a first conductive structure on the first insulating layer, and making the first conductive structure form at least a portion of a first gate structure.

[0230] S405: depositing a second insulating layer on the first insulating layer and the first conductive structure.

[0231] S406: fabricating a piezoelectric structure on the second insulating layer.

[0232] S407: depositing a third insulating layer on the second insulating layer and the piezoelectric structure.

[0233] S408: fabricating a second conductive structure and a first source-drain structure on the third insulating layer.

[0234] S409: depositing a fourth insulating layer on the third insulating layer, the second conductive structure and the first source-drain structure.

[0235] S410: depositing a reflective layer on the fourth insulating layer.

[0236] The development method of another method for preparing a fingerprint recognition module provided in this embodiment is basically the same as the principle and effect of the aforementioned method for preparing another method for preparing a fingerprint recognition module, except that: before the first active structure is made on one side of the first substrate, at least one of a first buffer layer and a first isolation layer is deposited on one side of the first substrate. The fingerprint recognition module prepared in this way can reduce the possibility of water or oxygen penetrating into the fingerprint recognition module through the first substrate, thereby affecting the performance of the first driving device structure and the luminescence characteristics of the pixel structure.

[0237] Based on the same inventive concept, the present application embodiment provides a method for preparing a display module, and the flow chart of the preparation method is as follows: Fig.10 As shown, the following steps S501-S511 are included:

[0238] S501: an active structure is fabricated on one side of the substrate.

[0239] S502: depositing a first insulating layer on one side of the substrate and the active structure.

[0240] S503: fabricating a first conductive structure on the first insulating layer, and making the first conductive layer form at least a portion of the gate structure.

[0241] S504: depositing a second insulating layer on the first insulating layer and the first conductive structure.

[0242] S505: fabricating a piezoelectric structure on the second insulating layer.

[0243] S506: depositing a third insulating layer on the second insulating layer and the piezoelectric structure.

[0244] S507: fabricating a second conductive structure on the third insulating layer.

[0245] S508: depositing a fourth insulating layer on the third insulating layer and the second conductive structure.

[0246] S509: fabricating a source-drain structure on the fourth insulating layer.

[0247] S510: depositing a planarization layer on the fourth insulating layer and the source-drain structure.

[0248] S511: fabricating a pixel structure on the flat layer.

[0249] A method for preparing a display module provided in this embodiment integrates an ultrasonic transceiver structure into a driver device structure of the display module, specifically, a first conductive structure forms at least a portion of a gate structure of the display driver device structure (and / or is arranged on the same layer as the gate structure), a piezoelectric structure is designed between the gate structure and the source-drain structure of the display driver device structure, and a second conductive structure is arranged on a side of the source-drain structure of the display driver device structure close to the gate structure (or, is arranged on the same layer as the source-drain structure).

[0250] The display module obtained by adopting the method for preparing a display module provided by the present embodiment can, on the one hand, reduce the thickness of the film layer that the ultrasonic wave needs to penetrate during the ultrasonic emission and / or reception stage, thereby reducing the energy loss during the ultrasonic wave propagation process; on the other hand, the electrical signal formed by the ultrasonic wave reflected back from the valleys and ridges of the fingerprint can directly act on the gate of the display drive device structure, and the obtained signal strength is stronger, which can effectively improve the sensitivity and accuracy of fingerprint recognition; on the other hand, it can be beneficial to achieve the thinning of the display module.

[0251] The present application embodiment provides a method for preparing a display module. The flowchart of the method is as follows: Fig.11 As shown, the following steps S601-S612 are included:

[0252] S601: depositing at least one of a buffer layer and an isolation layer on one side of a substrate.

[0253] Optionally, in this step, a deposition buffer layer and an isolation layer of a certain thickness can be deposited by PECVD equipment. The purpose of providing the deposition buffer layer and the isolation layer is to prevent water and oxygen from penetrating into the display module through the substrate, affecting the performance of the driving device structure and the luminescence characteristics of the pixel structure.

[0254] Optionally, before this step, a PI organic film of a certain thickness may be coated on the glass substrate by a PI Coater (polyimide film coating) device to form a PI flexible substrate.

[0255] S602: An active structure is fabricated on one side of the substrate.

[0256] Optionally, in this step, an active layer of a certain thickness may be deposited by a PECVD device, and patterned by photolithography and etching processes to obtain an active structure.

[0257] In this step, an active structure is fabricated on one side of the substrate, including: fabricating an active structure in a region of one side of the substrate corresponding to a portion of the first conductive structure.

[0258] S603: depositing a first insulating layer on one side of the substrate and the active structure.

[0259] Optionally, in this step, a certain thickness of silicon oxide can be deposited as the first insulating layer by using PECVD equipment.

[0260] S604: fabricating a first conductive structure on the first insulating layer, and making the first conductive layer form at least a portion of the gate structure.

[0261] Optionally, in this step, a certain thickness of metal can be deposited as a gate layer by a Sputter device, and patterned by photolithography and etching processes to obtain a gate structure.

[0262] Optionally, in this step, making a first conductive structure on the first insulating layer includes: making the first conductive structure in the spacing area between two adjacent pixel structures corresponding to the pixel structure of the first insulating layer. That is, the ultrasonic transceiver structure is set in the non-display area of ​​the display module, which can increase the integration and integration of the fingerprint recognition function and the display engineering, and can also control the area and size of the fingerprint in design and process.

[0263] Optionally, the gate layer metal obtained in this step can be divided into three parts, one part is used as the gate of the display area display driver device structure of the display module, another part is used as the Rx electrode of the ultrasonic transmitting structure, and another part is used as the Rx electrode of the ultrasonic receiving structure. Correspondingly, the piezoelectric structure produced in the subsequent step S606 can also be divided into three parts, and the second conductive structure produced in step S608 can also be divided into three parts.

[0264] S605: depositing a second insulating layer on the first insulating layer and the first conductive structure.

[0265] Optionally, in this step, a certain thickness of silicon nitride may be deposited as the second insulating layer by using PECVD equipment.

[0266] S606: fabricating a piezoelectric structure on the second insulating layer.

[0267] Optionally, this step may be performed in the same manner as S206 above, which will not be described in detail here.

[0268] In this step, a piezoelectric structure is fabricated on the second insulating layer, including: fabricating a piezoelectric structure in a spacing region between two adjacent pixel structures corresponding to the pixel structures of the second insulating layer.

[0269] S607: depositing a third insulating layer on the second insulating layer and the piezoelectric structure.

[0270] Optionally, in this step, silicon nitride having a certain thickness may be deposited by PECVD as the third insulating layer.

[0271] S608: fabricating a second conductive structure on the third insulating layer.

[0272] Optionally, in this step, a certain thickness of metal can be deposited as the second conductive layer by a Sputter device, and patterned by photolithography and etching processes to obtain a second conductive structure.

[0273] In this step, a second conductive structure is fabricated on the third insulating layer, including: fabricating the second conductive structure in a spacing region between two adjacent pixel structures corresponding to the pixel structure of the third insulating layer.

[0274] S609: depositing a fourth insulating layer on the third insulating layer and the second conductive structure.

[0275] Optionally, in this step, an interlayer insulating layer of a certain thickness may be deposited by a PECVD device, and patterned by photolithography and etching processes to obtain a fourth insulating layer.

[0276] In addition, in preparation for the next step of making the first source-drain structure, this step may also include making vias for electrically connecting the source-drain structure with the active structure, which may specifically include: simultaneously patterning and etching the fourth insulating layer, the third insulating layer and the second insulating layer to form the aforementioned vias.

[0277] S610: fabricating a source-drain structure on the fourth insulating layer.

[0278] Optionally, in this step, a certain thickness of metal, such as Ti (titanium) / Al (aluminum) / Ti, can be deposited by a Sputter device, and patterned by photolithography and etching processes to obtain a source-drain structure.

[0279] In this step, a source-drain structure is fabricated on the fourth insulating layer, including: fabricating the source-drain structure in a region of the fourth insulating layer corresponding to the active structure.

[0280] S611: depositing a planarization layer on the fourth insulating layer and the source-drain structure.

[0281] Optionally, in this step, a planar layer may be formed by using a coating resin material, and its patterning may be achieved by photolithography and etching processes.

[0282] S612: Fabricating a pixel structure on the flat layer.

[0283] Based on the same inventive concept, the present application embodiment provides another method for preparing a display module, and the flow chart of the preparation method is as follows: Fig.12 As shown, the following steps S701-S709 are included:

[0284] S701: An active structure is fabricated on one side of the substrate.

[0285] S702: depositing a first insulating layer on one side of the substrate and the active structure.

[0286] S703: fabricating a first conductive structure on the first insulating layer, and making the first conductive layer form at least a portion of a gate structure;

[0287] S704: depositing a second insulating layer on the first insulating layer and the first conductive structure.

[0288] S705: Fabricate a piezoelectric structure on the second insulating layer.

[0289] S706: depositing a third insulating layer on the second insulating layer and the piezoelectric structure.

[0290] S707: fabricating a second conductive structure and a source-drain structure on the third insulating layer.

[0291] S708: depositing a planarization layer on the third insulating layer, the second conductive structure and the source-drain structure.

[0292] S709: fabricating a pixel structure on the flat layer.

[0293] The principle and beneficial effects of another display module manufacturing method provided in this embodiment are basically the same as those of the aforementioned display module manufacturing method, except that: after depositing the third insulating layer on the second insulating layer and the piezoelectric structure, the second conductive structure and the source-drain structure are manufactured on the third insulating layer, and the flat layer is deposited on the third insulating layer, the second conductive structure and the source-drain structure. That is, in this embodiment, the second conductive structure and the source-drain structure are manufactured on the same layer, which can help to reduce the thickness of the manufactured display module and simplify the manufacturing process.

[0294] By applying the embodiments of the present application, at least the following beneficial effects can be achieved:

[0295] 1. The ultrasonic transceiver structure uses a first conductive structure, a piezoelectric structure, and a second conductive structure stacked in sequence. The first conductive structure and the second conductive structure can be used as a driving channel and a sensing channel for carrying touch signals, respectively. The piezoelectric structure can realize the transmission and / or reception of ultrasonic waves.

[0296] 2. In the ultrasonic transceiver structure, one of the first conductive structure and the second conductive structure is used to form a gate structure of the driver device structure, and / or is used to be arranged in the same layer as the gate structure of the driver device structure, so that at least part of the ultrasonic transceiver structure can be integrated into the driver device structure of the ultrasonic fingerprint recognition product. This can reduce the thickness of the film layer that the ultrasonic wave needs to penetrate during the ultrasonic emission and / or reception stage, thereby reducing the energy loss during the ultrasonic wave propagation process; on the other hand, the electrical signal formed by the ultrasonic wave reflected back from the valleys and ridges of the fingerprint can directly act on the gate of the driver device structure, and the obtained signal strength is stronger, which can effectively improve the sensitivity and accuracy of fingerprint recognition.

[0297] 3. Integrating the ultrasonic transceiver structure into the fingerprint recognition module or the fingerprint recognition module of the display panel can achieve the thinning of the fingerprint recognition module or the display panel, and can effectively improve the sensitivity and accuracy of ultrasonic fingerprint recognition.

[0298] 4. Integrating the ultrasonic transceiver structure into the display module can achieve thinning of the display module and effectively improve the sensitivity and accuracy of ultrasonic fingerprint recognition.

[0299] 5. In the display module, the ultrasonic transceiver structure corresponds to the spacing area between two adjacent pixel structures of the pixel structure, that is, the ultrasonic transceiver structure is set in the non-display area of ​​the display module. This can increase the integration and integration of fingerprint recognition function and display engineering, and can also control the area and size of the fingerprint in design and process.

[0300] 6. The ultrasonic transceiver structure includes: an ultrasonic transmitting structure and an ultrasonic receiving structure. This can facilitate the separate execution of ultrasonic transmission and reception. Specifically, the ultrasonic transmitting structure executes the ultrasonic transmission action, and the ultrasonic receiving structure executes the ultrasonic reception action, that is, neither substructure needs to operate in a time-sharing manner.

[0301] 7. The second conductive structures of the ultrasonic transmitting structure and the ultrasonic receiving structure are arranged in the same layer, which can simplify the preparation process and is also conducive to the thinning of the display module.

[0302] 8. The piezoelectric structures of the ultrasonic transmitting structure and the ultrasonic receiving structure are arranged in the same layer, which can simplify the preparation process and is also conducive to the thinning of the display module.

[0303] Those skilled in the art will appreciate that the various operations, methods, steps, measures, and schemes in the processes discussed in this application may be alternated, altered, combined, or deleted. Further, other steps, measures, and schemes in the various operations, methods, and processes discussed in this application may also be alternated, altered, rearranged, decomposed, combined, or deleted. Further, the steps, measures, and schemes in the prior art that are similar to those disclosed in this application may also be alternated, altered, rearranged, decomposed, combined, or deleted.

[0304] In the description of the present application, it should be understood that the terms "center", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0305] The terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, unless otherwise specified, "plurality" means two or more.

[0306] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a direct connection, or an indirect connection through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the terms in this application can be understood according to specific circumstances.

[0307] In the description of this specification, specific features, structures, materials or characteristics may be combined in an appropriate manner in any one or more embodiments or examples.

[0308] It should be understood that, although the steps in the flowchart of the accompanying drawings are displayed in sequence as indicated by the arrows, these steps are not necessarily executed in sequence in the order indicated by the arrows. Unless otherwise specified herein, there is no strict order restriction on the execution of these steps, and they can be executed in other orders. Moreover, at least a part of the steps in the flowchart of the accompanying drawings may include multiple sub-steps or multiple stages, and these sub-steps or stages are not necessarily executed at the same time, but can be executed at different times, and their execution order is not necessarily sequential, but can be executed in turn or alternately with other steps or at least a part of the sub-steps or stages of other steps.

[0309] The above description is only a partial implementation method of the present application. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present application. These improvements and modifications should also be regarded as the scope of protection of the present application.

Claims

1. A display panel, characterized in that: include: Display module, and fingerprint recognition module; One side of the display film group is attached to a side of the first substrate of the fingerprint recognition module away from the first active structure; The fingerprint recognition module includes a first substrate, a first driving device structure and an ultrasonic transceiver structure, wherein the ultrasonic transceiver structure includes a first conductive structure, a piezoelectric structure and a second conductive structure stacked in sequence, wherein one of the first conductive structure and the second conductive structure is used to form a gate structure of the driving device structure and / or is used to be arranged in the same layer as the gate structure of the driving device structure; The first driving device structure includes a first active structure, a first gate structure and a first source-drain structure stacked in sequence; the first active structure is located on one side of the first substrate; The first conductive structure of the ultrasonic transceiver structure forms at least part of the first gate structure, and / or is arranged in the same layer as the first gate structure; the second conductive structure of the ultrasonic transceiver structure is located on a side of the first source-drain structure close to the first gate structure, or the second conductive structure is arranged in the same layer as the first source-drain structure; the side of the first substrate away from the first active structure is used to fit with one side of the display module; The display module comprises a second substrate, a second driving device structure and a pixel structure stacked in sequence; The second driving device structure includes a second active structure, a second gate structure, and a second source-drain structure stacked in sequence; The pixel structure is located on a side of the second source-drain structure away from the second gate structure; The second substrate is located on a side of the second active structure away from the second gate structure; A side of the second substrate away from the second active structure is in contact with the first substrate of the fingerprint recognition module.

2. The display panel according to claim 1, characterized in that: The other of the first conductive structure and the second conductive structure is configured to be disposed in the same layer as the source-drain electrode structure of the driving device structure.

3. The display panel according to claim 1, characterized in that: The fingerprint recognition module further includes at least one of a first buffer layer, a first isolation layer, a reflective layer, and a first insulating layer; The first buffer layer is located between the first substrate and the first active structure; The first isolation layer is located between the first substrate and the first active structure; The reflective layer is located on a side of the first source-drain structure away from the piezoelectric structure of the ultrasonic transceiver structure; The first insulating layer is disposed at least one of between the first substrate and the first gate structure, between the first gate structure and the piezoelectric structure, between the piezoelectric structure and the second conductive structure, between the second conductive structure and the first source-drain structure, and on a side of the first source-drain structure away from the second conductive structure.

4. The display panel according to claim 1, characterized in that: The first conductive structure of the ultrasonic transceiver structure forms at least a part of the second gate structure, and / or is arranged in the same layer as the second gate structure; The second conductive structure of the ultrasonic transceiver structure is located on a side of the second source-drain structure close to the second gate structure, or the second conductive structure and the second source-drain structure are arranged in the same layer; The pixel structure is located on a side of the second source-drain structure away from the second gate structure.

5. The display panel according to claim 4, characterized in that: The ultrasonic transceiver structure corresponds to the spacing area between two adjacent pixel structures of the pixel structure.

6. The display panel according to claim 4 or 5, characterized in that: The ultrasonic transceiver structure includes: an ultrasonic transmitting structure and an ultrasonic receiving structure; The first conductive structure of the ultrasonic emission structure is arranged in the same layer as the gate structure of the display driving device structure; The first conductive structure of the ultrasonic receiving structure forms at least a portion of the gate structure.

7. The display panel according to claim 6, characterized in that: The second conductive structure of the ultrasonic transmitting structure is arranged in the same layer as the second conductive structure of the ultrasonic receiving structure; The piezoelectric structure of the ultrasonic transmitting structure and the piezoelectric structure of the ultrasonic receiving structure are arranged in the same layer.

8. The display module according to claim 4 or 5, characterized in that: The display module further includes at least one of a buffer layer, an isolation layer, and an insulating layer; The buffer layer is located between the second substrate and the second active structure; The isolation layer is located between the second substrate and the second active structure; The insulating layer is disposed at least one of between the second substrate and the second gate structure, between the second gate structure and the piezoelectric structure of the ultrasonic transceiver structure, between the piezoelectric structure and the second conductive structure, between the second conductive structure and the second source-drain structure, and between the second source-drain structure and the pixel structure.

9. A method for manufacturing a display panel, for manufacturing the display panel according to any one of claims 1 to 8, characterized in that: The steps of manufacturing the fingerprint recognition module in the display panel include: Fabricating a first active structure on one side of the first substrate; depositing a first insulating layer on one side of the first substrate and the first active structure; Fabricating a first conductive structure on the first insulating layer, and making the first conductive structure form at least a portion of a first gate structure; depositing a second insulating layer on the first insulating layer and the first conductive structure; Fabricating a piezoelectric structure on the second insulating layer; depositing a third insulating layer on the second insulating layer and the piezoelectric structure; Fabricating a second conductive structure on the third insulating layer; depositing a fourth insulating layer on the third insulating layer and the second conductive structure; A first source-drain structure is fabricated on the fourth insulating layer.

10. The preparation method according to claim 9, characterized in that: Before manufacturing the first active structure on one side of the first substrate, the method includes: depositing at least one of a first buffer layer and a first isolation layer on one side of the first substrate; And / or, after manufacturing the first source-drain structure on the fourth insulating layer, the method further comprises: depositing a planarization layer on the fourth insulating layer and the first source-drain structure; and depositing a reflective layer on the planarization layer.

11. A method for manufacturing a display panel, used for manufacturing the display panel according to any one of claims 1 to 8, characterized in that: The steps of manufacturing the fingerprint recognition module in the display panel include: Fabricating a first active structure on one side of the first substrate; depositing a first insulating layer on one side of the first substrate and the first active structure; Fabricating a first conductive structure on the first insulating layer, and making the first conductive structure form at least a portion of a first gate structure; depositing a second insulating layer on the first insulating layer and the first conductive structure; Fabricating a piezoelectric structure on the second insulating layer; depositing a third insulating layer on the second insulating layer and the piezoelectric structure; Fabricating a second conductive structure and a first source-drain structure on the third insulating layer; A fourth insulating layer is deposited on the third insulating layer, the second conductive structure and the first source-drain structure.

12. A method for manufacturing a display panel, used for manufacturing the display panel according to any one of claims 1 to 8, characterized in that: The steps of manufacturing the display module in the display panel include: An active structure is fabricated on one side of the substrate; depositing a first insulating layer on one side of the substrate and the active structure; Fabricating a first conductive structure on the first insulating layer, and making the first conductive layer form at least a portion of a gate structure; depositing a second insulating layer on the first insulating layer and the first conductive structure; Fabricating a piezoelectric structure on the second insulating layer; depositing a third insulating layer on the second insulating layer and the piezoelectric structure; Fabricating a second conductive structure on the third insulating layer; depositing a fourth insulating layer on the third insulating layer and the second conductive structure; Fabricating a source-drain structure on the fourth insulating layer; Depositing a planarization layer on the fourth insulating layer and the source-drain structure; A pixel structure is fabricated on the planar layer.

13. The preparation method according to claim 12, characterized in that: The manufacturing of the first conductive structure on the first insulating layer comprises: manufacturing the first conductive structure in a spacing region between two adjacent pixel structures corresponding to the pixel structures of the first insulating layer; The manufacturing of the piezoelectric structure on the second insulating layer comprises: manufacturing the piezoelectric structure in a spacing region between two adjacent pixel structures corresponding to the pixel structures on the second insulating layer; The step of manufacturing the second conductive structure on the third insulating layer comprises: manufacturing the second conductive structure in a spacing region between two adjacent pixel structures corresponding to the pixel structures on the third insulating layer.

14. The preparation method according to claim 12 or 13, characterized in that: The step of manufacturing the active structure on one side of the substrate comprises: manufacturing the active structure in a region on one side of the substrate corresponding to a portion of the first conductive structure; The manufacturing of the source-drain structure on the fourth insulating layer includes: manufacturing the source-drain structure in a region of the fourth insulating layer corresponding to the active structure.

15. The preparation method according to claim 12, characterized in that: Before the active structure is fabricated on one side of the substrate, the method includes: depositing at least one of a buffer layer and an isolation layer on one side of the substrate.

16. A method for manufacturing a display panel, used for manufacturing the display panel according to any one of claims 1 to 8, characterized in that: The steps of manufacturing the display module in the display panel include: An active structure is fabricated on one side of the substrate; depositing a first insulating layer on one side of the substrate and the active structure; Fabricating a first conductive structure on the first insulating layer, and making the first conductive layer form at least a portion of a gate structure; depositing a second insulating layer on the first insulating layer and the first conductive structure; Fabricating a piezoelectric structure on the second insulating layer; depositing a third insulating layer on the second insulating layer and the piezoelectric structure; Fabricating a second conductive structure and a source-drain structure on the third insulating layer; Depositing a planarization layer on the third insulating layer, the second conductive structure and the source-drain structure; A pixel structure is fabricated on the planar layer.

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