Display panel and display device

Abstract

The present application discloses a display panel and a display device. By adding a shading layer and a reflecting portion to the display panel, most of the external ambient light is blocked and absorbed by the shading layer, and the light-transmitting area on the shading layer allows the light reflected after irradiating the fingerprint to pass through the shading layer and the reflecting portion to be reflected to the light sensor, thereby reducing the noise light received by the light sensor and improving the signal-to-noise ratio.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a display panel and a display device. Background Art

[0002] In recent years, with the rapid development of touch technology, mobile products with biometric functions have gradually entered people's lives and work. Fingerprint recognition technology has attracted much attention due to its unique identity characteristics. Press-type and sliding-type fingerprint recognition technologies based on silicon-based processes have been integrated into mobile products. In the future, the focus of people's attention will be on fingerprint recognition technology in the display area.

[0003] At present, fingerprint recognition technology mainly uses photoelectric sensors to collect fingerprint images. However, the existing technology has the problem that the signal-to-noise ratio of fingerprint recognition is small. Summary of the invention

[0004] The present application provides a display panel, and the specific solution is as follows:

[0005] A display panel provided in an embodiment of the present application includes: a substrate, a plurality of light-emitting devices and a plurality of light-sensing sensors located on the substrate, a thin-film transistor structure located between the substrate and the light-emitting devices, a pixel defining layer for defining the position of each of the light-emitting devices, and a first planarization layer arranged under the pixel defining layer; the light-emitting devices are electrically connected to the thin-film transistor structure; the display panel further includes: a light shielding layer and a reflective portion corresponding to each of the light-sensing sensors;

[0006] The reflective portion is located on the side of the corresponding light sensor facing the substrate, and the side of the light sensor facing the reflective portion is the light incident side of the light sensor;

[0007] The light-shielding layer is provided with a light-transmitting area corresponding to each of the light sensors, and the orthographic projection of the light-transmitting area on the substrate does not overlap with the orthographic projection of the light sensor on the substrate; the light-shielding layer is located on the side of the thin-film transistor structure away from the substrate, and the orthographic projection of the light-shielding layer on the substrate and the orthographic projection of the light sensor on the substrate have at least an overlapping area.

[0008] Optionally, the light sensor comprises a first electrode, a photoelectric conversion layer and a second electrode which are stacked in sequence; wherein:

[0009] The material of the first electrode is a transparent conductive material, and the first electrode is located between the photoelectric conversion layer and the base substrate;

[0010] The light emitting device comprises an anode, a light emitting layer and a cathode layer which are stacked, and the anode is located between the light emitting layer and the base substrate.

[0011] Optionally, the light shielding layer is located between the pixel defining layer and the thin film transistor structure; or, the light shielding layer is multiplexed as the pixel defining layer;

[0012] The light sensor is located between the light shielding layer and the reflecting portion; or, the light sensor penetrates the light shielding layer along the thickness direction of the light shielding layer.

[0013] Optionally, the light shielding layer is located between the thin film transistor structure and the light emitting device, and the light shielding layer is multiplexed as a first planarization layer;

[0014] The light emitting device and the thin film transistor structure are electrically connected through a via hole penetrating the first planarization layer.

[0015] Optionally, the second electrode of the light sensor and the anode of the light-emitting device are arranged in the same layer and the same material.

[0016] Optionally, the display panel further includes: a second planarization layer located between the first planarization layer and the thin film transistor structure, and a connecting electrode located between the second planarization layer and the first planarization layer; the light emitting device is electrically connected to the thin film transistor structure via the connecting electrode.

[0017] Optionally, the first electrode or the second electrode of the light sensor and the connecting electrode are arranged in the same layer and the same material.

[0018] Optionally, the first electrode of the light sensor and the connecting electrode are arranged in the same layer and the same material, and the second electrode of the light sensor and the anode of the light emitting device are arranged in the same layer and the same material.

[0019] Optionally, the second electrode of the light sensor and the connecting electrode are configured to be in the same layer and material, and the first electrode of the light sensor and the source / drain electrode or the gate electrode of the thin film transistor structure are configured to be in the same layer and material.

[0020] Optionally, the light shielding layer is multiplexed as the pixel defining layer;

[0021] The first electrode of the light sensor and the transparent conductive layer in the anode of the light-emitting device are set to be the same layer and the same material;

[0022] And / or, the second electrode of the light sensor and the cathode layer of the light emitting device are set to be in the same layer and the same material.

[0023] Optionally, the light shielding layer includes a light shielding portion corresponding to each of the light sensing sensors, and the orthographic projection of the light shielding portion on the base substrate covers the orthographic projection of the corresponding light sensing sensor on the base substrate;

[0024] The light-transmitting area corresponding to the light sensor surrounds the light-shielding portion corresponding to the light sensor.

[0025] Optionally, the anode includes an anode metal layer, and the anode is reused as the light shielding portion.

[0026] Optionally, the second electrode of the light sensor is a metal electrode, and the second electrode of the light sensor is multiplexed as the light shielding portion corresponding to the light sensor.

[0027] Optionally, the display panel further comprises: a light shielding layer located between the thin film transistor structure and the base substrate, the light shielding layer being used to shield the light from the side of the base substrate away from the light shielding layer from irradiating the thin film transistor structure;

[0028] The reflecting portion and the light shielding layer are arranged in the same layer and made of the same material.

[0029] Correspondingly, an embodiment of the present application also provides a display device comprising any of the above-mentioned display panels. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 One of the structural schematic diagrams of the display panel provided in the embodiment of the present application;

[0031] Figure 2 The second structural schematic diagram of the display panel provided in the embodiment of the present application;

[0032] Figure 3 The third structural diagram of the display panel provided in the embodiment of the present application;

[0033] Figure 4 A fourth structural schematic diagram of a display panel provided in an embodiment of the present application;

[0034] Figure 5 A fifth structural diagram of a display panel provided in an embodiment of the present application;

[0035] Figure 6 The sixth structural diagram of the display panel provided in the embodiment of the present application;

[0036] Figure 7 The seventh structural diagram of the display panel provided in the embodiment of the present application;

[0037] Figure 8 An eighth structural schematic diagram of a display panel provided in an embodiment of the present application;

[0038] Fig. 9 A ninth structural diagram of a display panel provided in an embodiment of the present application;

[0039] Fig.10 The tenth structural diagram of the display panel provided in the embodiment of the present application;

[0040] Fig.11 The eleventh structural diagram of the display panel provided in the embodiment of the present application;

[0041] Fig.12 The twelfth structural diagram of the display panel provided in the embodiment of the present application;

[0042] Fig.13 The thirteenth structural diagram of the display panel provided in the embodiment of the present application;

[0043] Fig.14 A fourteenth structural diagram of a display panel provided in an embodiment of the present application;

[0044] Fig.15 The fifteenth structural diagram of the display panel provided in the embodiment of the present application;

[0045] Fig.16 The sixteenth structural diagram of the display panel provided in the embodiment of the present application;

[0046] Fig.17 The seventeenth structural diagram of the display panel provided in the embodiment of the present application;

[0047] Fig.18 This is one of the top views of the light-transmitting area of ​​the light-shielding layer in the embodiment of the present application;

[0048] Fig.19 The second top view of the light-transmitting area of ​​the light-shielding layer in the embodiment of the present application;

[0049] Fig. 20 This is one of the structural schematic diagrams of the photoelectric conversion layer of the light sensor in the embodiment of the present application;

[0050] Fig.21 This is the second structural schematic diagram of the photoelectric conversion layer of the photosensor in the embodiment of the present application. DETAILED DESCRIPTION

[0051] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the present application will be further described below in conjunction with the drawings and examples. However, the example embodiments can be implemented in various forms and should not be understood as being limited to the embodiments described herein; on the contrary, these embodiments are provided to make the present application more comprehensive and complete, and to fully convey the concept of the example embodiments to those skilled in the art. The same figure marks in the figures represent the same or similar structures, and thus their repeated descriptions will be omitted. The words expressing position and direction described in this application are all explained using the drawings as examples, but changes can be made as needed, and the changes made are all included in the scope of protection of this application. The drawings of this application are only used to illustrate the relative position relationship and do not represent the true proportion.

[0052] It should be noted that specific details are described in the following description to facilitate a full understanding of the present application. However, the present application can be implemented in a variety of other ways different from those described herein, and those skilled in the art can make similar generalizations without violating the connotation of the present application. Therefore, the present application is not limited to the specific implementation methods disclosed below. The subsequent description of the specification is a preferred implementation method for implementing the present application, but the description is for the purpose of illustrating the general principles of the present application and is not intended to limit the scope of the present application. The scope of protection of the present application shall be determined by the definition of the attached claims.

[0053] The display panel and the display device provided in the embodiments of the present application are described in detail below with reference to the accompanying drawings.

[0054] The embodiment of the present application provides a display panel, such as Figures 1 to 17 As shown, it includes a base substrate 1, a plurality of light emitting devices 7 and a plurality of light sensing sensors 200 located on the base substrate 1. Figures 2 to 17 As shown, the display panel also includes a thin film transistor structure 4 located between the base substrate 1 and the light-emitting device 7, a pixel defining layer 6 for defining the position of each light-emitting device 7, and a first planarization layer 5-1 arranged under the pixel defining layer 6, and the light-emitting device 7 is electrically connected to the thin film transistor structure 4.

[0055] like Figures 1 to 17 As shown, the display panel further includes: a light shielding layer 100 and a reflective portion 300 corresponding to each light sensor 200. The reflective portion 300 is located on the side of the corresponding light sensor 200 facing the base substrate 1, and the side of the light sensor 200 facing the reflective portion 300 is the light incident side of the light sensor.

[0056] The light-shielding layer 100 is provided with a light-transmitting area 101 corresponding to each of the light sensors 200, and the orthographic projection of the light-transmitting area 101 on the substrate 1 does not overlap with the orthographic projection of the light sensor 200 on the substrate 1; the light-transmitting area 101 is used to allow the light emitted by the light-emitting device 7 to be incident on the reflecting part 300 after being reflected by the fingerprint; the light-shielding layer 100 is located on the side of the thin-film transistor structure 4 away from the substrate 1, and the orthographic projection of the light-shielding layer 100 on the substrate 1 and the orthographic projection of the light sensor 200 on the substrate 1 have at least an overlapping area.

[0057] In this way, by providing a light shielding layer on the display panel and providing a light-transmitting area on the light shielding layer, and by reasonably arranging the positions of the light-transmitting area, the reflective part and the light sensor, most of the external ambient light can be shielded and absorbed, and the light reflected by the light-emitting device after irradiating the fingerprint can enter the other side of the light shielding layer through the light-transmitting area at a suitable angle, and be reflected again to the light-incoming side of the light sensor through the reflective part. Finally, the light sensor reduces the external ambient light received and improves the signal-to-noise ratio.

[0058] In the specific implementation process, in order to further improve the signal-to-noise ratio, such as Figures 1 to 17 As shown, the orthographic projection of the light shielding layer 100 on the base substrate 1 covers the orthographic projection of the light sensor 200 on the base substrate 1 .

[0059] In the specific implementation process, Figure 1 As shown, the reflective portion 300 is used to reflect the light incident on the reflective portion after being reflected by the fingerprint to the light incident side of the light sensor 200. Figures 1 to 17 As shown, the reflective portion 300 may be disposed on a side of the base substrate 1 facing the light sensor 200 ; the reflective portion may also be disposed on a side of the base substrate facing away from the light sensor, which is not limited here.

[0060] In the specific implementation process, Figure 1 As shown, the display panel also includes a top cover plate 10 made of glass. The light emitting device 7 is located above the light shielding layer 100, and the light sensor 200 is located below the light shielding layer. The working principle of the display panel is as follows: when performing fingerprint recognition, the user's finger will press on the top cover plate 10. At this time, the light emitted by the light emitting device 7 will irradiate the top cover plate 10. The refractive index of air n 空气 =1, the refractive index of glass n 玻璃 =1.5, the refractive index of finger skin n 皮肤≈1.39. Since the valley of the finger does not actually touch the top cover, the critical angles for total reflection of light at the valley and ridge of the fingerprint are different. If the light hits the valley of the fingerprint, such as point A in the figure, the critical angle for total reflection of light is If light hits the ridge of the fingerprint, such as point B in the figure, the critical angle of total reflection of light is The display panel arranges the positions of the light emitting device 7, the light-transmitting area 101, and the reflecting part 300 reasonably so that the light-transmitting area 101 mainly transmits the light whose reflection angle is between θ1 and θ2 at the fingerprint. Then, if the light irradiates the valley of the fingerprint, the light that passes through the light-transmitting area 101 and enters the light sensor 200 after being reflected by the reflecting part 300 is the light that undergoes total reflection, and the light intensity of this part of the light is relatively large. If the light irradiates the ridge of the fingerprint, the light that passes through the light-transmitting area 101 and enters the light sensor 200 after being reflected by the reflecting part 300 does not undergo total reflection, and part of the light is refracted, so the light intensity of the reflected light is relatively small. In this way, the valley and ridge of the fingerprint can be determined by the different light intensities of the light received by the light sensor 200. At the same time, the light shielding layer 100 can shield and absorb the ambient light from the outside. As for the noise light inside the display panel, it is mainly formed by the light emitted by the light emitting device 7 being reflected after irradiating other structures of the display panel. Most of this noise light can also be shielded and absorbed by the entire light shielding layer 100.

[0061] In the specific implementation process, the light-emitting device may be an organic light-emitting diode (OLED) or other light-emitting devices, which are not limited here. Figures 2 to 17 As shown, the light emitting device 7 includes an anode 7-1, a light emitting layer 7-2 and a cathode layer 7-3 which are sequentially stacked close to one side of the substrate.

[0062] like Figures 2 to 17 As shown, the light sensor 200 includes a first electrode 210 , a photoelectric conversion layer 230 and a second electrode 220 .

[0063] In the specific implementation process, Fig.18 As shown, the light-transmitting area 101 corresponding to each of the light sensors 200 may be a plurality of light-transmitting holes around the light sensor 200; or Fig.19 As shown, the light-transmitting area 101 may also be an annular light-transmitting area arranged around the light sensor 200; or Fig.11 , Fig.12 , Fig.13 , Fig.15 , Fig.16 , Fig.17 As shown, the light-transmitting area 101 may be a gap between each light-shielding portion 400 in the light-shielding layer 100 and other light-impermeable structures, which is not limited here.

[0064] In the specific implementation process, Figures 2 to 17 As shown, the display panel further includes a thin film encapsulation layer 8, a touch function layer 9, and a top cover plate 10 which are sequentially stacked on the cathode layer 7-3 of the light-emitting device 7. The thin film encapsulation layer 8 is used to protect the light-emitting device 7 and isolate liquid and air during the use of the display panel. The touch function layer 9 is used to realize the touch function of the display panel. Generally, the touch function layer 9 also includes a touch electrode (not shown in the figure).

[0065] Alternatively, if Figures 2 to 17 As shown, the light sensor 200 includes a first electrode 210, a photoelectric conversion layer 230 and a second electrode 220 which are stacked in sequence.

[0066] The first electrode 210 is made of a transparent conductive material, and is located between the photoelectric conversion layer 230 and the base substrate 1 .

[0067] In a specific implementation process, the light sensor may be a photodiode. The photodiode may be a PN type photodiode. Fig. 20 As shown, the photoelectric conversion layer 230 is a PN junction, including a P-type semiconductor 231, an intermediate structure 232 and an N-type semiconductor 233, and the intermediate structure 232 is a depletion region. Alternatively, the photodiode is a PIN-type photodiode. Fig. 20 As shown, the photoelectric conversion layer 230 includes a P-type semiconductor 231, an intermediate structure 232 and an N-type semiconductor 233, wherein the intermediate structure 232 is an intrinsic semiconductor. Alternatively, the photodiode is an organic photodiode (OPD). Fig.21 As shown, the photoelectric conversion layer 230 includes a donor 234 and an acceptor 235. In the specific implementation process, the light sensor can also be other sensors, which are not limited here. The material of the first electrode can be metal oxides such as ZnO, indium tin oxide (Indium Tin Oxide, ITO), indium gallium zinc oxide (Indium Gallium Zinc Oxide, IGZO), or other transparent conductive materials, which are not limited here.

[0068] In this way, by setting the first electrode of the light sensor to be a transparent material, the light reflected by the reflecting part can enter the photoelectric conversion layer from the first electrode.

[0069] Alternatively, if Figures 2 to 17 As shown, the thin film transistor structure 4 includes an active layer 4-1, an interlayer dielectric layer 4-2, a gate insulating layer 4-3, a source electrode 4-4, a drain electrode 4-6, and a gate electrode 4-5. A buffer layer 3 is provided between the thin film transistor structure 4 and the substrate 1 to protect the thin film transistor structure 4.

[0070] Specifically, Figures 2 to 17 The thin film transistor structure 4 in the embodiment is a top gate structure as an example, and the thin film transistor structure in the embodiment of the present application can be a top gate structure or a bottom gate structure, which is not limited here. The positions of the source electrode 4-4 and the drain electrode 4-6 of the thin film transistor structure 4 can be interchanged, which is not limited here.

[0071] Optionally, in the display panel provided in the embodiment of the present application, Figure 2 , Figure 3 , Figure 4 , Figure 5 As shown, the light shielding layer is located between the pixel defining layer 6 and the thin film transistor structure 4. Specifically, as Figure 5 As shown, the light shielding layer 100 may be an additional film layer. Alternatively, other film layers between the pixel defining layer 6 and the thin film transistor structure 4 may be reused as the light shielding layer; for example Figure 2 , Figure 3 , Figure 4 As shown, the light shielding layer 100 is reused as the first planarization layer 5 - 1 , which is equivalent to the first planarization layer 5 - 1 being prepared with a light shielding material and forming a light-transmitting area, and having the same function as the light shielding layer 100 .

[0072] Alternatively, optionally, in the display panel provided in the embodiment of the present application, as Figure 6 , Figure 7 , Figure 8 , Fig. 9 , Fig.10 As shown, the light shielding layer 100 is reused as the pixel defining layer 6 , which is equivalent to the pixel defining layer 6 being prepared with a light shielding material and forming a light-transmitting area, and having the same function as the light shielding layer 100 .

[0073] Optionally, in the display panel provided in the embodiment of the present application, Figure 4 , Figure 6 , Figure 8 , Fig. 9 , Fig.11 , Fig.12 , Fig.13 , Fig.14 As shown, the light sensor 200 is located between the light shielding layer 100 and the reflective portion 300 .

[0074] Alternatively, optionally, in the display panel provided in the embodiment of the present application, as Figure 2 , Figure 3 , Figure 5 , Figure 7 , Fig.10 , Fig.15 , Fig.16 , Fig.17 As shown, the light sensor 200 penetrates the light shielding layer 100 along the thickness direction of the light shielding layer 100 .

[0075] In the specific implementation process, Figure 2 , Figure 3 , Figure 5 , Figure 7 , Fig.10 As shown, all or part of the photoelectric conversion layer 230 of the light sensor is embedded in the light shielding layer 100. Alternatively, as Fig.15 , Fig.16 , Fig.17 As shown, the second electrode 220 of the light sensor 200 is made of a metal reflective material and is reused as the light shielding layer 100 .

[0076] In this way, by setting the light-shielding layer on the backlight side of the light-emitting device and placing the light sensor on or below the light-shielding layer, most of the ambient light entering the light-incident side of the light-sensitive sensor can be blocked and absorbed without affecting the display and fingerprint irradiation of the light-emitting device. The entire light-shielding layer can also block and absorb the noise light inside the display panel from entering the light-incident side of the light-sensitive sensor.

[0077] Alternatively, if Figure 2 As shown, the shading layer 100 is located between the thin film transistor structure 4 and the light emitting device 7, and the shading layer 100 is reused as the first planarization layer 5-1; the light emitting device 7 and the thin film transistor structure 4 are electrically connected through a via hole penetrating the shading layer 100.

[0078] In a specific implementation process, the light sensor 200 penetrates the light shielding layer 100 along the thickness direction of the light shielding layer 100, the first electrode of the light sensor 200 can be arranged in the same layer as the drain electrode 4-6 of the thin film transistor structure 4, and the second electrode 220 of the light sensor is arranged in the same layer as the anode 7-1 of the light emitting device 7. The first electrode and the second electrode of the light sensor can also be arranged separately, which is not limited here.

[0079] In this way, by reusing the light shielding layer as the first planarization layer, the structure of the display panel is simplified, the production process of the panel is optimized, and the production cost is reduced.

[0080] Alternatively, if Figure 2 , Figure 3 , Figure 5 , Figure 6 , Figure 8 , Fig.12 , Fig.13 , Fig.16 , Fig.17 As shown, the second electrode 220 of the light sensor 200 and the anode 7 - 1 of the light emitting device 7 are arranged in the same layer and made of the same material.

[0081] In this way, by setting the second pole of the light sensor and the anode of the light emitting device to be in the same layer and the same material, the structure of the display panel is simplified, the production process of the panel is optimized, and the production cost is reduced. On the other hand, since the anode of the light emitting device generally includes an anode metal layer, it has reflective properties. By setting the second pole of the light sensor and the anode of the light emitting device to be in the same layer and the same material, the shielding ability of the second pole of the light sensor against external ambient light and noise light is further enhanced, so that the signal-to-noise ratio of the display panel is higher.

[0082] Alternatively, if Figure 3 , Figure 4 , Figure 5 , Figure 8 , Fig. 9 , Fig.10 , Fig.13 , Fig.14 , Fig.17 As shown, the display panel also includes: a second planarization layer 5-2 located between the first planarization layer 5-1 and the thin film transistor structure 4, and a connecting electrode 50 located between the second planarization layer 5-2 and the first planarization layer 5-1; the light-emitting device 7 is electrically connected to the connecting electrode 50, and the connecting electrode 50 is electrically connected to the thin film transistor structure 4.

[0083] In this way, by setting the second planarization layer, the distance between the light sensor and the light shielding portion is increased, which is conducive to setting the relative position of the light sensor and the light shielding portion, so that the light entering from the light-transmitting area of ​​the light shielding layer is reflected to the first pole of the light sensor at a suitable angle. By setting a connecting electrode between the first planarization layer and the second planarization layer, the problem of directly electrically connecting the light-emitting device to the thin-film transistor structure and forming a via hole with a large depth that penetrates both the first planarization layer and the second planarization layer is avoided. By forming two via holes with smaller depths on the two planarization layers respectively, and then electrically connecting the connecting electrode to the electrodes in the two via holes, the difficulty of the patterning process is reduced.

[0084] Alternatively, if Figure 3 , Figure 4 , Figure 5 , Figure 8 , Fig. 9 , Fig.13 , Fig.14 , Fig.17 As shown, the first electrode 210 or the second electrode 220 of the light sensor 200 and the connecting electrode 50 are arranged in the same layer and the same material.

[0085] In the specific implementation process, Figure 3 , Figure 5 , Figure 8 , Fig.13 , Fig.17 As shown, the first electrode 210 of the light sensor 200 and the connecting electrode 50 are set to the same layer and the same material, and the first electrode 210 of the light sensor 200 and the connecting electrode 50 are both made of transparent conductive materials. The materials of the first electrode 210 and the connecting electrode 50 can be metal oxides such as ZnO, indium tin oxide (Indium Tin Oxide, ITO), indium gallium zinc oxide (Indium Gallium Zinc Oxide, IGZO), or other transparent conductive materials, which are not limited here.

[0086] Or, if Figure 4 , Fig. 9 , Fig.14 As shown, the second electrode 220 of the light sensor 200 and the connecting electrode 50 are arranged in the same layer and made of the same material.

[0087] In the specific implementation process, the second pole 220 of the light sensor 200 and the connecting electrode 50 are set to be in the same layer and the same material, and the second pole 220 of the light sensor 200 and the connecting electrode 50 are both made of a metal material with reflective properties. The materials of the second pole 220 and the connecting electrode 50 can be metal materials such as Al, or other metal materials with reflective properties, which are not limited here.

[0088] In this way, by arranging the first electrode or the second electrode of the light sensor and the connecting electrode to be in the same layer and made of the same material, the production process is simplified and the production cost is reduced.

[0089] Alternatively, if Figure 3 , Figure 5 , Figure 8 , Fig.13 , Fig.17 As shown, the first electrode 210 of the light sensor 200 and the connecting electrode 50 are set to the same layer and material, and the second electrode 220 of the light sensor 200 and the anode 7-1 of the light emitting device 7 are set to the same layer and material.

[0090] Specifically, the first pole 210 of the light sensor 200 and the connecting electrode 50 are both made of transparent conductive materials. The materials of the first pole 210 and the connecting electrode 50 can be metal oxides such as ZnO, indium tin oxide (Indium Tin Oxide, ITO), indium gallium zinc oxide (Indium Gallium Zinc Oxide, IGZO), or other transparent conductive materials, which are not limited here. The anode 7-1 of the light-emitting device 7 generally includes an anode metal layer with reflective properties. Then, the second pole 220 of the light sensor 200 is set in the same layer and material as the anode 7-1, and also has a reflective metal film layer.

[0091] In this way, by setting the first electrode of the light sensor and the connecting electrode to be of the same layer and material, and setting the second electrode of the light sensor and the anode of the light emitting device to be of the same layer and material, the structure of the display panel is simplified, the production process of the panel is optimized, and the production cost is reduced. On the other hand, since the anode of the light emitting device generally includes a reflective metal film layer, the shielding ability of the second electrode of the light sensor to the external ambient light is further enhanced, so that the signal-to-noise ratio of the display panel is higher.

[0092] Alternatively, if Figure 4 , Fig. 9 , Fig.14 As shown, the second electrode 220 of the light sensor 200 and the connecting electrode 50 are configured in the same layer and material. The first electrode 210 of the light sensor 200 and the source electrode 4-4 and the drain electrode 4-6 of the thin film transistor structure 4 are configured in the same layer and material.

[0093] In the specific implementation process, the source electrode 4-4, the drain electrode 4-6 of the thin film transistor structure 4 and the first electrode 210 of the light sensor 200 are made of transparent materials, which can be metal oxides such as ZnO, indium tin oxide (Indium Tin Oxide, ITO), indium gallium zinc oxide (Indium Gallium Zinc Oxide, IGZO), or other transparent conductive materials, which are not limited here.

[0094] Or, optionally, the first electrode of the light sensor and the gate electrode of the thin film transistor structure are arranged in the same layer and the same material.

[0095] In the specific implementation process, the gate electrode of the thin film transistor structure and the first electrode of the photosensor are made of transparent materials, which can be metal oxides such as ZnO, indium tin oxide (Indium Tin Oxide, ITO), indium gallium zinc oxide (Indium Gallium Zinc Oxide, IGZO), or other transparent conductive materials, which are not limited here.

[0096] In this way, by setting the second electrode of the photosensor and the connecting electrode to the same layer and material, and setting the first electrode of the photosensor and the source / drain electrode or gate electrode of the thin film transistor structure to the same layer and material, the structure of the display panel is simplified, the production process of the panel is optimized, and the production cost is reduced.

[0097] Alternatively, if Figure 6 , Figure 7 , Figure 8 , Fig. 9 , Fig.10 As shown, the light shielding layer 100 is reused as the pixel defining layer 6 .

[0098] Alternatively, if Figure 7 , Fig.10 , Fig.11 , Fig.15 As shown, the first electrode 210 of the light sensor 200 and the transparent conductive layer in the anode 7 - 1 of the light emitting device 7 are set to be the same layer and the same material.

[0099] And / or, the second electrode 220 of the light sensor 200 and the cathode layer 7 - 3 of the light emitting device 7 are configured to be in the same layer and made of the same material.

[0100] In the specific implementation process, since the cathode layer 7-3 of the light emitting device 7 needs to be able to transmit the light emitted by the active light emitting layer 7-2, the cathode layer 7-3 is a transparent conductive material. Then, if the second electrode 220 of the light sensor 200 and the cathode layer 7-3 of the light emitting device 7 are set to the same layer and the same material, such as Figure 7 , Fig.10 , Fig.11 As shown, a light-sensitive sensor shading portion 400 must be provided between the cathode layer 7-3 and the thin-film encapsulation layer 8, and the orthographic projection of the light-sensitive sensor shading portion 400 on the base substrate 1 can cover the orthographic projection of the second pole 220 on the base substrate 1, so as to ensure that the external ambient light and the internal noise light can be shielded, and prevent the light from entering the light-sensitive sensor 200 from the second pole 220.

[0101] In this way, the first electrode of the photosensor and the transparent conductive layer in the anode of the light-emitting device are set to the same layer and the same material; and / or the second electrode of the photosensor and the cathode layer of the light-emitting device are set to the same layer and the same material, which simplifies the structure of the display panel, optimizes the production process of the panel, and reduces production costs.

[0102] In a specific implementation process, the first electrode of the light sensor and the anode of the light emitting device may also be configured to be of the same layer but different materials, which is not limited here.

[0103] Alternatively, if Fig.11 , Fig.12 , Fig.13 As shown, the shading layer 100 includes a shading portion 400 corresponding to each of the light sensors 200 , and the shading portion 400 covers the orthographic projection of the corresponding light sensor 200 on the base substrate 1 ; the light-transmitting area 101 corresponding to the light sensor 200 surrounds the shading portion 400 corresponding to the light sensor 200 .

[0104] In the specific implementation process, Fig.11 As shown, the photoelectric conversion layer 230 of the light sensor 200 is embedded in the pixel defining layer 6, the first electrode 210 of the light sensor 200 and the transparent conductive layer in the anode 7-1 of the light emitting device 7 are set to the same layer and the same material, and the second electrode 220 of the light sensor 200 and the cathode layer 7-3 of the light emitting device 7 are set to the same layer and the same material. The first electrode and the second electrode of the light sensor can also be set separately, which is not limited here. Or, Fig.12 and Fig.13 As shown, the light sensor 200 is disposed below the pixel defining layer 6. Fig.12 As shown, the first electrode 210 of the light sensor 200 is disposed in the same layer as the source electrode 4-4 and the drain electrode 4-6 of the thin film transistor structure 4, and the second electrode 220 of the light sensor 200 is disposed in the same layer as the anode 7-1 of the light emitting device 7. Fig.13 As shown, the first electrode 210 of the light sensor 200 and the connecting electrode 50 are provided in the same layer and material using a transparent conductive material, and the second electrode 220 of the light sensor 200 is provided in the same layer and material using the anode 7-1 of the light emitting device 7. The first electrode and the second electrode of the light sensor can also be provided separately, or can be provided in the same layer and material with other film layers, which is not limited here. The light shielding portion can also be provided at any reasonable position of the second electrode of the light sensor away from the substrate, which is not limited here.

[0105] In this way, by providing one-to-one corresponding shading parts above the light sensors, the display panel can prevent external ambient light from irradiating the light sensors while minimizing the blocking of the light emitted by the light-emitting device, thereby improving the display effect of the display panel.

[0106] Alternatively, if Fig.14 As shown, the anode 7 - 1 includes an anode metal layer, and the anode 7 - 1 is reused as the light shielding portion 400 .

[0107] In the specific implementation process, the pattern of the anode 7-1 is set to a larger shape than that of the prior art, so as to better block the external ambient light. At the same time, there are gaps between the anodes 7-1, and the gaps serve as light-transmitting areas 101 to transmit light reflected from the fingerprint to the reflective portion 300.

[0108] In this way, by reusing the anode metal layer as the light-shielding portion, the light-shielding property of the metal is utilized, thereby reducing the production cost compared to using a dark-colored material to manufacture the light-shielding layer.

[0109] Alternatively, if Fig.15 , Fig.16 , Fig.17 As shown, the second electrode 220 of the light sensor 200 is a metal electrode, and the second electrode 220 of the light sensor 200 is reused as the light shielding portion 400 .

[0110] In the specific implementation process, Fig.15 As shown, the photoelectric conversion layer 230 of the light sensor 200 is embedded in the pixel defining layer 6. Then, the thickness of the photoelectric conversion layer 230 should be set to a smaller value, such as within a range of hundreds of nanometers, to reduce the light emitted by the light emitting device 7 from irradiating the photoelectric conversion layer 230 from the side. The first electrode of the light sensor 200 is arranged in the same layer as the anode 7-1 of the light emitting device 7, and the second electrode of the light sensor 200 is arranged in the same layer as the cathode layer 7-3 of the light emitting device 7. Or, as Fig.16 , Fig.17 As shown, since the anode 7 - 1 includes an anode metal layer, the second electrode 220 of the light sensor 200 is provided in the same layer and material as the anode 7 - 1 of the light emitting device 7 .

[0111] In this way, by making the second electrode of the light sensor out of metal material, it is possible to prevent external ambient light from entering the light sensor, and at the same time, no additional structure is added, thereby simplifying the production process and reducing the production cost.

[0112] Alternatively, if Figures 2 to 17As shown, the display panel further includes a light shielding layer 2 located between the thin film transistor structure 4 and the base substrate 1 , and the light shielding layer 2 is used to shield light from irradiating the thin film transistor structure 4 .

[0113] The reflective portion 300 and the light shielding layer 2 are formed in the same layer and made of the same material.

[0114] In the specific implementation process, the light shielding layer 2 is generally a metal film layer with reflective properties, which can be a metal material such as Al, or other metal materials with reflective properties, which is not limited here.

[0115] In this way, by arranging the reflective portion and the light shielding layer to be in the same layer and made of the same material, the structure of the display panel is simplified, the production process of the panel is optimized, and the production cost is reduced.

[0116] Based on the same inventive concept, the embodiment of the present application further provides a display device, including any of the above display devices provided in the embodiment of the present application. The display device can be any product or component with a display function, such as a mobile phone, a tablet computer, a television, a monitor, a laptop computer, a digital photo frame, a navigator, etc. The implementation of the display device can refer to the embodiment of the display panel above, and the repeated parts will not be repeated.

[0117] The present application discloses a display panel and a display device. By adding a shading layer and a reflecting part to the display panel, most of the external ambient light and the noise light inside the display panel are blocked and absorbed by the shading layer, and the light-transmitting area on the shading layer allows the light reflected after irradiating the fingerprint to pass through the shading layer and the reflecting part to reflect to the light sensor, thereby reducing the noise light received by the light sensor and improving the signal-to-noise ratio.

[0118] Obviously, those skilled in the art can make various changes and modifications to the present application without departing from the spirit and scope of the present application. Thus, if these modifications and variations of the present application fall within the scope of the claims of the present application and their equivalents, the present application is also intended to include these modifications and variations.

Claims

1. A display panel, wherein: include: A base substrate, a plurality of light-emitting devices and a plurality of light-sensing sensors located on the base substrate, a thin-film transistor structure located between the base substrate and the light-emitting devices, a pixel defining layer for defining the position of each of the light-emitting devices, and a first planarization layer disposed under the pixel defining layer; The light emitting device is electrically connected to the thin film transistor structure; The display panel further comprises: a light shielding layer, a light shielding layer and a reflective portion corresponding to each of the light sensors, located between the thin film transistor structure and the base substrate; The light shielding layer is used to block the light from the side of the substrate away from the light shielding layer from irradiating the thin film transistor structure; The reflecting portion is located on the side of the corresponding light sensor facing the base substrate, and the side of the light sensor facing the reflecting portion is the light incident side of the light sensor; and the reflecting portion and the light shielding layer are set to be the same layer and the same material; The light-shielding layer is provided with a light-transmitting area corresponding to each of the light sensors, and the orthographic projection of the light-transmitting area on the substrate does not overlap with the orthographic projection of the light sensor on the substrate; the light-shielding layer is located on the side of the thin-film transistor structure away from the substrate, and the orthographic projection of the light-shielding layer on the substrate and the orthographic projection of the light sensor on the substrate have at least an overlapping area.

2. The display panel according to claim 1, wherein: The light sensor comprises a first electrode, a photoelectric conversion layer and a second electrode which are stacked in sequence; wherein: The material of the first electrode is a transparent conductive material, and the first electrode is located between the photoelectric conversion layer and the base substrate; The light emitting device comprises an anode, a light emitting layer and a cathode layer which are stacked, and the anode is located between the light emitting layer and the base substrate.

3. The display panel according to claim 2, wherein: The light shielding layer is located between the pixel defining layer and the thin film transistor structure; or, the light shielding layer is reused as the pixel defining layer; The light sensor is located between the light shielding layer and the reflective portion; or, the light sensor penetrates the light shielding layer along a direction perpendicular to the substrate.

4. The display panel according to claim 3, wherein: The light shielding layer is located between the thin film transistor structure and the light emitting device, and the light shielding layer is reused as a first planarization layer; The light emitting device and the thin film transistor structure are electrically connected through a via hole penetrating the first planarization layer.

5. The display panel according to claim 4, wherein: The second electrode of the light sensor and the anode of the light emitting device are arranged in the same layer and the same material.

6. The display panel according to claim 4, wherein: It also includes: a second planarization layer located between the first planarization layer and the thin film transistor structure, and a connecting electrode located between the second planarization layer and the first planarization layer; the light emitting device is electrically connected to the thin film transistor structure through the connecting electrode.

7. The display panel according to claim 6, wherein: The first electrode or the second electrode of the light sensor and the connecting electrode are arranged in the same layer and the same material.

8. The display panel according to claim 7, wherein: The first electrode of the light sensor and the connecting electrode are arranged in the same layer and the same material, and the second electrode of the light sensor and the anode of the light emitting device are arranged in the same layer and the same material.

9. The display panel according to claim 7, wherein: The second electrode of the light sensor and the connecting electrode are arranged in the same layer and the same material, and the first electrode of the light sensor and the source / drain electrode or the gate electrode of the thin film transistor structure are arranged in the same layer and the same material.

10. The display panel according to claim 3, wherein: The light shielding layer is reused as the pixel defining layer; The first electrode of the light sensor and the transparent conductive layer in the anode of the light-emitting device are set to be the same layer and the same material; And / or, the second electrode of the light sensor and the cathode layer of the light emitting device are set to be in the same layer and the same material.

11. The display panel according to claim 2, wherein: The light shielding layer comprises a light shielding portion corresponding to each of the light sensing sensors, and the orthographic projection of the light shielding portion on the base substrate covers the orthographic projection of the corresponding light sensing sensor on the base substrate; The light-transmitting area corresponding to the light sensor surrounds the light-shielding portion corresponding to the light sensor.

12. The display panel according to claim 11, wherein: The anode includes an anode metal layer, and the anode is reused as the light shielding portion.

13. The display panel according to claim 11, wherein: The second electrode of the light sensor is a metal electrode, and the second electrode of the light sensor is multiplexed as the light shielding portion corresponding to the light sensor.

14. A display device, wherein: Comprising a display panel as described in any one of claims 1-13.

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