image sensor

Abstract

An image sensor is disclosed. The image sensor can include groups of pixels arranged two-dimensionally on a substrate, and each of the groups of pixels includes a plurality of pixels. The image sensor can also include a light blocking pattern disposed on the substrate and between the pixels. The group of pixels can include a first group of image pixels that senses a first light, a second group of image pixels that senses a second light, and an auto focus (AF) group of pixels that detects a phase. The AF group of pixels can include a first AF pixel and a second AF pixel adjacent to each other, and there can be no light blocking pattern on the substrate between the first AF pixel and the second AF pixel.

Description

[0001] Cross-references to related applications

[0002] This application claims priority to Korean Patent Application No. 10-2019-0068748, filed with the Korean Intellectual Property Office on June 11, 2019, and Korean Patent Application No. 10-2019-0097394, filed with the Korean Intellectual Property Office on August 9, 2019, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The apparatus and method according to one or more exemplary embodiments relates to an image sensor. Background Technology

[0004] An image sensor is an electronic device that converts image information into electrical signals and is used in consumer electronics (e.g., digital cameras, cell phone cameras, and camcorders) and cameras installed in automobiles, security systems, and robots. An image sensor includes a pixel array comprising multiple pixels, each of which includes a light-sensing device. To acquire accurate image information in a short time, an image sensor may have an autofocus function. Summary of the Invention

[0005] One or more exemplary embodiments provide an image sensor configured to have autofocus functionality to obtain a sharp image.

[0006] According to one aspect of an exemplary embodiment, an image sensor is provided, the image sensor comprising: a pixel group arranged two-dimensionally on a substrate, each of the pixel group comprising a plurality of pixels; and a light-blocking pattern located on the substrate and between the pixels. The pixel group may include: a first image pixel group configured to sense a first light; a second image pixel group configured to sense a second light; and an autofocus (AF) pixel group configured to detect phase. The AF pixel group may include a first AF pixel and a second AF pixel adjacent to each other, and there may be no light-blocking pattern on the substrate between the first AF pixel and the second AF pixel.

[0007] According to another exemplary embodiment, an image sensor is provided, the image sensor including a pixel group arranged two-dimensionally on a substrate, each of the pixel group including a plurality of pixels; and a microlens array layer covering the substrate. The pixels can be separated from each other by a deep device isolation structure disposed in the substrate, and each pixel can include a photoelectric conversion portion disposed in the substrate. The pixel group can include: an image pixel group; an autofocus (AF) pixel group configured to detect phase; and a first peripheral pixel group located between the AF pixel group and the nearest image pixel group that is closest to the AF pixel group. A first distance from the top of the microlens array layer to the substrate, measured between the peripheral image pixel group and the AF pixel group, can be less than a second distance from the top of the microlens array layer to the substrate, measured between the peripheral image pixel group and the nearest image pixel group.

[0008] According to another exemplary embodiment, an image sensor is provided, the image sensor including a pixel group arranged two-dimensionally on a substrate, each of the pixel group including a plurality of pixels. The pixel group may include: an image pixel group; an autofocus (AF) pixel group configured to detect phase; and a peripheral image pixel group located between the AF pixel group and the nearest image pixel group to the closest AF pixel group in the image pixel group. The peripheral image pixel group may include a plurality of peripheral image pixels, and the AF pixel group may include a plurality of AF pixels. The peripheral image pixels may include peripheral photoelectric conversion portions in the substrate, and the AF pixels may include AF photoelectric conversion portions in the substrate. When viewed in a planar view, the area of ​​the peripheral photoelectric conversion portion may be smaller than the area of ​​the AF photoelectric conversion portion.

[0009] According to another exemplary embodiment, an image sensor is provided, the image sensor including a pixel group arranged two-dimensionally on a substrate, each of the pixel group including a plurality of pixels. The pixel group may include: a first image pixel group configured to sense a first light; a second image pixel group configured to sense a second light; an autofocus (AF) pixel group configured to detect phase and including a first AF pixel and a second AF pixel; a first peripheral image pixel group located between the first AF pixel and a nearest first image pixel group within the first image pixel group, the first peripheral image pixel group including fewer pixels than the nearest first image pixel group; and a second peripheral image pixel group located between the second AF pixel and a nearest second image pixel group within the second image pixel group, the second peripheral image pixel group including fewer pixels than the nearest second image pixel group. The first peripheral image pixel group may be configured to sense the second light, and the second peripheral image pixel group may be configured to sense the first light. Attached Figure Description

[0010] Exemplary embodiments will become clearer from the following detailed description in conjunction with the accompanying drawings.

[0011] in:

[0012] Figure 1A and Figure 1B This is a plan view illustrating an image sensor according to an exemplary embodiment;

[0013] Figure 2A It is along Figure 1A or Figure 1B A sectional view taken by line A-A';

[0014] Figure 2B It is along Figure 1A or Figure 1B A sectional view taken by line B-B';

[0015] Figure 3 This is a plan view illustrating an image sensor according to an exemplary embodiment;

[0016] Figure 4A It is along Figure 3 A sectional view taken by line A-A';

[0017] Figure 4B It is along Figure 3 A sectional view taken by line B-B';

[0018] Figure 5 This is a plan view illustrating an image sensor according to an exemplary embodiment;

[0019] Figure 6A It is along Figure 5 A sectional view taken by line A-A';

[0020] Figure 6B It is along Figure 5 A sectional view taken by line B-B';

[0021] Figure 7A and Figure 7B It is along Figure 5 A sectional view taken by line A-A';

[0022] Figure 8 This is a plan view illustrating an image sensor according to an exemplary embodiment;

[0023] Figure 9 This is a plan view illustrating an image sensor according to an exemplary embodiment;

[0024] Figure 10A It is along Figure 9A sectional view taken by line A-A';

[0025] Figure 10B It is along Figure 9 A sectional view taken by line B-B';

[0026] Figure 11 This is a plan view illustrating an image sensor according to an exemplary embodiment;

[0027] Figure 12A It is along Figure 11 A sectional view taken by line A-A';

[0028] Figure 12B It is along Figure 11 A sectional view taken by line B-B';

[0029] Figure 13 This is a plan view illustrating an image sensor according to an exemplary embodiment;

[0030] Figure 14 It is along Figure 13 A sectional view taken by line B-B';

[0031] Figure 15 This is a plan view illustrating an image sensor according to an exemplary embodiment;

[0032] Figure 16 It is along Figure 15 A sectional view taken by line B-B';

[0033] Figure 17 This is a plan view illustrating an image sensor according to an exemplary embodiment;

[0034] Figure 18 It is along Figure 17 A sectional view taken by line B-B';

[0035] Figure 19 This is a cross-sectional view showing a semiconductor packaging module according to an exemplary embodiment;

[0036] Figure 20 This is a plan view illustrating a mobile phone according to an exemplary embodiment. Detailed Implementation

[0037] One or more exemplary embodiments will now be described with reference to the accompanying drawings. It should be noted that these drawings are intended to illustrate the general characteristics of the methods, structures, and / or materials used in particular exemplary embodiments and to supplement the written description provided below. However, these drawings are not to scale and may not accurately reflect the precise structural or performance characteristics of any given embodiment, and should not be construed as limiting or restricting the range of values ​​or properties covered by the exemplary embodiments. For example, for clarity, the relative thickness and location of molecules, layers, regions, and / or structural elements may be reduced or exaggerated. The use of similar or identical reference numerals in the various drawings is intended to indicate the presence of similar or identical elements or features.

[0038] Figure 1A and Figure 1B This is a plan view illustrating the image sensor 50 according to an exemplary embodiment. Figure 2A It is along Figure 1A or Figure 1B A sectional view taken by line A-A'. Figure 2B It is along Figure 1A or Figure 1B The sectional view taken by line B-B'. Figure 1A and Figure 1B This is a plan view showing the same image sensor, where, in Figure 1A The boundaries between pixel groups are clearly shown, and... Figure 1B The planar shape of the light-blocking pattern is clearly shown in the image.

[0039] Reference Figure 1A , Figure 1B , Figure 2A and Figure 2B The image sensor 50 according to the present exemplary embodiment may include a substrate 1 having two opposing surfaces (e.g., a first surface 1a and a second surface 1b). Light may be incident on the second surface 1b. The substrate 1 may be a single-crystal semiconductor substrate or an epitaxially grown semiconductor layer. The substrate 1 may be doped with impurities to have a first conductivity type. For example, the substrate 1 may be doped with p-type impurities. Pixel groups G1, G2, G3, PG1, PG2, and AG may be arranged two-dimensionally in the substrate 1. Each of the pixel groups G1, G2, G3, PG1, PG2, and AG may include a plurality of pixels PX, PX1, PX2, AF1, and AF2.

[0040] In detail, pixel groups G1, G2, G3, PG1, PG2, and AG may include a first image pixel group G1, a second image pixel group G2, a third image pixel group G3, a first peripheral image pixel group PG1, a second peripheral image pixel group PG2, and an autofocus (AF) pixel group AG. The first image pixel group G1 and the second peripheral image pixel group PG2 can be configured to sense a first light. The second image pixel group G2 and the first peripheral image pixel group PG1 can be configured to sense a second light. The third image pixel group G3 can be configured to sense a third light. The AF pixel group AG can be configured to detect phase.

[0041] In the case that each of the image pixel groups G1, G2, and G3 comprises n×m image pixels PX arranged in an n×m matrix (n columns and m rows), the first peripheral image pixel group PG1 and the second peripheral image pixel group PG2 can each comprise b peripheral image pixels PX1 and PX2, respectively, where b is a natural number greater than or equal to (n×m) / 2 and less than or equal to (n×m)-1. The numbers n and m can each be independent natural numbers greater than or equal to 2. When each of n and m is 2, the image sensor can have a 2×2 tetra-type pixel (or color filter) arrangement. When each of n and m is 3, the image sensor can have a 3×3 nona-type pixel (or color filter) arrangement.

[0042] In the current exemplary embodiment, such as Figure 1A , Figure 1B , Figure 2A and Figure 2B As shown, each of the image pixel groups G1, G2, and G3 can have four image pixels PX arranged in a 2×2 matrix (2 columns and 2 rows). The AF pixel group AG can have two pixels arranged in a 2×1 matrix. The first peripheral image pixel group PG1 can include three first peripheral image pixels PX1. The second peripheral image pixel group PG2 can include three second peripheral image pixels PX2.

[0043] In the first direction X, a first peripheral image pixel group PG1 may be located between the first image pixel group G1 and the AF pixel group AG. A second peripheral image pixel group PG2 may be located between the second image pixel group G2 and the AF pixel group AG. The AF pixel group AG may include a first AF pixel AF1 adjacent to the first peripheral image pixel group PG1 and a second AF pixel AF2 adjacent to the second peripheral image pixel group PG2. The second AF pixel AF2 may be configured to be close to (or adjacent to) the first AF pixel AF1 in the first direction X. The AF pixel group AG may be referred to as the phase detection pixel group. The first AF pixel AF1 may be referred to as the first phase detection pixel. The second AF pixel AF2 may be referred to as the second phase detection pixel.

[0044] The first peripheral image pixel group PG1 may have a structure in which one pixel is omitted from the pixels of the second image pixel group G2 in the form of a 2×2 matrix. The second peripheral image pixel group PG2 may have a structure in which one pixel is omitted from the 2×2 pixels of the first image pixel group G1. A portion of the first peripheral image pixel group PG1 may be in contact with a portion of the second peripheral image pixel group PG2.

[0045] In other words, a pair of pixels selected from a pair of adjacent first image pixel groups G1 and second image pixel groups G2 can be used as the first AF pixel AF1 and the second AF pixel AF2 constituting the AF pixel group AG. Each of the adjacent pair of first image pixel groups G1 and second image pixel groups G2 is missing one pixel compared to the other first image pixel groups G1 and second image pixel groups G2, so that the adjacent pair of first image pixel groups G1 and second image pixel groups G2 can be used as the second peripheral image pixel group PG2 and the first peripheral image pixel group PG1, respectively.

[0046] Pixels PX, PX1, PX2, AF1, and AF2 can be separated from each other by a deep device isolation structure 20. Each of pixels PX, PX1, PX2, AF1, and AF2 can have a size of 0.8 μm or smaller. For example, each of pixels PX, PX1, PX2, AF1, and AF2 can have a size of 0.6 μm to 0.7 μm. In another example, each of pixels PX, PX1, PX2, AF1, and AF2 can have a size of 0.5 μm to 0.6 μm.

[0047] A deep device isolation structure 20 may be disposed in a deep trench 15 formed in a substrate 1. The deep trench 15 may be formed to extend from a second surface 1b of the substrate 1 toward a first surface 1a. The deep device isolation structure 20 may include a fixed charge layer 17 and an insulating gap filling layer 19. The fixed charge layer 17 may conformally cover the inner sidewall of the deep trench 15. The fixed charge layer 17 may extend outward from the deep trench 15 to cover the second surface 1b of the substrate 1. The insulating gap filling layer 19 may fill the deep trench 15. The insulating gap filling layer 19 may extend outward from the deep trench 15 to cover the second surface 1b of the substrate 1.

[0048] In other embodiments, a deep trench 15 may be formed from the first surface 1a toward the second surface 1b, and a deep device isolation structure 20 may be disposed in the deep trench 15 to have a front deep trench isolation (FDTI) structure connecting the first surface 1a and the second surface 1b.

[0049] The fixed charge layer 17 can be formed from a metal oxide layer with an oxygen content lower than its stoichiometric ratio or a metal fluoride layer with a fluorine content lower than its stoichiometric ratio. Therefore, the fixed charge layer 17 can have a negative fixed charge. The fixed charge layer 17 can be formed from a metal oxide or metal fluoride containing at least one metal selected from hafnium (Hf), zirconium (Zr), aluminum (Al), tantalum (Ta), titanium (Ti), yttrium (Y), and lanthanides. In this case, hole accumulation can occur near the fixed charge layer 17. Therefore, dark current and white spot problems can be effectively prevented or suppressed. In an exemplary embodiment, the fixed charge layer 17 can be at least one of aluminum oxide and hafnium oxide. The fixed charge layer 17 can be in contact with the substrate 1. The insulating gap-filling layer 19 can be formed from a silicon oxide-based material with good gap-filling properties.

[0050] A transistor may be disposed on a first surface 1a of substrate 1. The transistor may include a transfer transistor, a reset transistor, a source follower transistor, and a select transistor. The first surface 1a of substrate 1 may be covered with an interlayer insulating layer 3. The interlayer insulating layer 3 may have a multilayer structure comprising multiple insulating layers. Interconnects 5 with a multilayer structure may be disposed in the interlayer insulating layer 3. The interlayer insulating layer 3 may be covered with a passivation layer 7. The passivation layer 7 may include a silicon nitride layer.

[0051] A device isolation region 13 may be disposed in the substrate 1 and near the first surface 1a. The device isolation region 13 may be doped to have the same conductivity type as the substrate 1, but it should be understood that one or more other exemplary embodiments are not limited thereto. For example, according to another exemplary embodiment, the device isolation region 13 may be doped to have a higher doping concentration than the substrate 1. In an exemplary embodiment, the device isolation region 13 may be doped with p-type impurities. A deep device isolation structure 20 may contact the device isolation region 13.

[0052] Pixels PX, PX1, PX2, AF1, and AF2 may include photoelectric conversion portions 11, 11p, and 11a disposed in the substrate 1. Specifically, each of the image pixels PX in the first image pixel group to the third image pixel group G1, G2, and G3 may include a photoelectric conversion portion 11. Each of the peripheral image pixels PX1 and PX2 in the peripheral image pixel groups PG1 and PG2 may include a peripheral photoelectric conversion portion 11p. Each of the AF pixels AF1 and AF2 in the AF pixel group AG may include an AF photoelectric conversion portion 11a. In an exemplary embodiment, when viewed in a plan view, photoelectric conversion portions 11, 11p, and 11a may have the same area. Photoelectric conversion portions 11, 11p, and 11a may be doped to have a conductivity type different from that of the substrate 1. For example, photoelectric conversion portions 11, 11p, and 11a may be doped with n-type impurities.

[0053] An auxiliary insulating layer 21 can be disposed on the second surface 1b of the substrate 1 to cover the insulating gap filling layer 19. The auxiliary insulating layer 21 can be used as an adhesive layer, an anti-reflective layer, and / or a planarization layer. The auxiliary insulating layer 21 may include at least one of an alumina layer, a silicon nitride layer, or an organic insulating layer.

[0054] Light-blocking patterns 25 can be disposed between pixels PX, PX1, PX2, AF1, and AF2 and on the auxiliary insulating layer 21. The light-blocking patterns 25 can be formed of or include at least one metallic material such as tungsten and titanium. The light-blocking patterns 25 can prevent crosstalk between adjacent pixels PX, PX1, PX2, AF1, and AF2. Specifically, on the auxiliary insulating layer 21, the light-blocking patterns 25 can be disposed between image pixels PX, between peripheral image pixels PX1 and PX2, between image pixels PX and peripheral image pixels PX1 and PX2, and between AF pixels AF1 and AF2 and peripheral image pixels PX1 and PX2. When viewed in a planar view, the light-blocking patterns 25 can have a grid shape. The light-blocking patterns 25 may not be disposed on the auxiliary insulating layer 21 between the first AF pixel AF1 and the second AF pixel AF2.

[0055] Color filters CF1, CF2, CF3, and CFA can be arranged in an array shape between the light-blocking patterns 25 and on the auxiliary insulating layer 21. In the first image pixel group G1 and the second peripheral image pixel group PG2, the first color filter CF1 can be disposed on the auxiliary insulating layer 21. In the second image pixel group G2 and the first peripheral image pixel group PG1, the second color filter CF2 can be disposed on the auxiliary insulating layer 21. In the third image pixel group G3, the third color filter CF3 can be disposed on the auxiliary insulating layer 21. In the AF pixel group AG, the AF color filter CFA can be disposed on the auxiliary insulating layer 21. For example, the second color filter CF2 can be green. For example, the AF color filter CFA can be green or colorless and transparent. The first color filter CF1 can be, for example, red, and the third color filter CF3 can be, for example, blue. It should be understood that this is only one example, and one or more other exemplary embodiments are not limited thereto. For example, according to another exemplary embodiment, the third color filter CF3 can be red, and the first color filter CF1 can be blue. Color filters CF1, CF2, CF3 and CFA can include dye materials to display their own colors.

[0056] The microlens array layer 23 can be disposed on color filters CF1, CF2, CF3, and CFA. The microlens array layer 23 may include: a first microlens portion 231 disposed on image pixel PX and peripheral image pixels PX1 and PX2; and a second microlens portion 232 disposed on AF pixels AF1 and AF2. When viewed in a planar view, the first microlens portion 231 may be circular and may have a hemispherical cross-section. When viewed in a planar view, the second microlens portion 232 may be elliptical with its major axis parallel to the first direction X, and one second microlens portion 232 may cover both adjacent first AF pixels AF1 and second AF pixels AF2.

[0057] The thickness of the microlens array layer 23 can vary depending on its position. The first thickness T1 of the microlens array layer 23 between the second microlens portion 232 and the adjacent first microlens portion 231 can be less than the second thickness T2 of the microlens array layer 23 between the first microlens portions 231.

[0058] In detail, the microlens array layer 23 may have a first thickness T1 between the first peripheral image pixel group PG1 and the AF pixel group AG. The microlens array layer 23 may have a second thickness T2 between the first peripheral image pixel group PG1 and the adjacent first image pixel group G1. The first thickness T1 may be less than the second thickness T2.

[0059] The first distance D1, measured between the first peripheral image pixel group PG1 and the AF pixel group AG, from the top of the microlens array layer 23 to the second surface 1b of the substrate 1, can be less than the second distance D2, measured between the first peripheral image pixel group PG1 and the adjacent first image pixel group G1, from the top of the microlens array layer 23 to the second surface 1b of the substrate 1.

[0060] In one or more exemplary embodiments, the depth D3 of the microlens array layer 23 between the second microlens portion 232 and the adjacent first microlens portion 231 may be greater than the depth D4 of the microlens array layer 23 between the first microlens portions 231.

[0061] The loading effect during the etching process used to form the microlens array layer 23 can lead to differences in the thickness, spacing, or depth of the microlens array layer 23. For example, forming the microlens array layer 23 may include: forming an initial lens layer made of a transparent polymer material on color filters CF1, CF2, CF3, and CFA, and then forming an initial lens pattern arranged in an array shape on the initial lens layer. An etching process can then be performed to transfer the shape of the initial lens pattern onto the initial lens layer, resulting in the formation of the microlens array layer 23. Here, the initial lens pattern used to form the second microlens portion 232 may be larger than the other initial lens patterns, and this can lead to variations in the etching process conditions (e.g., the density of the etching gas). As a result, the area surrounding the second microlens portion 232 can be etched deeper, and this can lead to the aforementioned differences in the thickness, spacing, or depth of the microlens array layer 23.

[0062] In an exemplary embodiment, the image sensor 50 may include a plurality of AF pixel groups AG, and the total number of the first AF pixel AF1 and the second AF pixel AF2 constituting the AF pixel group AG may be 0.5%-10% of the total number of pixels PX, PX1, PX2, AF1 and AF2.

[0063] The image sensor 50 according to an exemplary embodiment may include image pixel groups G1, G2, G3 having an "n×m" pixel arrangement and an AF pixel group AG for detecting phase in a shared-on-chip-lens manner. By comparing the phase difference between the images sensed by the first AF pixel AF1 and the second AF pixel AF2, respectively, the focus of the acquired image can be adjusted. This can be used to implement the autofocus function of the image sensor 50. Here, since there is no light-blocking pattern 25 between the first AF pixel AF1 and the second AF pixel AF2 in the AF pixel group AG, the amount of light incident on the first AF pixel AF1 and the second AF pixel AF2 can be increased. Therefore, even if the number of AF pixel groups AG is small, the phase detection efficiency can be improved.

[0064] Furthermore, in the image sensor 50 according to an exemplary embodiment, the AF pixel group AG can be configured to span across a first image pixel group G1 and a second image pixel group G2 that are adjacent to each other. In other words, the AF pixel group AG can be configured using some pixels from the first image pixel group G1 and the second image pixel group G2 that are adjacent to each other. Alternatively, due to the AF pixel group AG, the first peripheral image pixel group PG1 and the second peripheral image pixel group PG2 can include a number of pixels smaller than the number of pixels in each of the image pixel groups G1, G2, and G3. According to this arrangement, signal processing efficiency can be enhanced and pixel binning and high dynamic range (HDR) characteristics can be improved.

[0065] Figure 3 This is a plan view showing the image sensor 51 according to an exemplary embodiment. Figure 4A It is along Figure 3 A sectional view taken by line A-A'. Figure 4B It is along Figure 3 The sectional view taken by line B-B'.

[0066] Reference Figure 3 , Figure 4A and Figure 4B In the image sensor 51 according to the present exemplary embodiment, when viewed in the second direction Y, the first peripheral image pixel group PG1 may be located between the third image pixel group G3 and the AF pixel group AG. Additionally, the second peripheral image pixel group PG2 may be located between the second image pixel group G2 and the AF pixel group AG. The first image pixel group G1 may be configured to sense a first light. The second image pixel group G2 and the first peripheral image pixel group PG1 may be configured to sense a second light. The third image pixel group G3 and the second peripheral image pixel group PG2 may be configured to sense a third light. The AF pixel group AG may be configured to detect phase.

[0067] The AF pixel group AG may include a first AF pixel AF1 adjacent to the first peripheral image pixel group PG1 and a second AF pixel AF2 adjacent to the second peripheral image pixel group PG2. The second AF pixel AF2 may be set to be close to the first AF pixel AF1 in the second direction Y.

[0068] The first peripheral image pixel group PG1 may have a structure in which one pixel is omitted from the 2×2 pixels of the second image pixel group G2. The second peripheral image pixel group PG2 may have a structure in which one pixel is omitted from the 2×2 pixels of the third image pixel group G3. A portion of the first peripheral image pixel group PG1 may be in contact with a portion of the second peripheral image pixel group PG2.

[0069] In other words, a pair of pixels selected from a pair of neighboring second image pixel groups G2 and third image pixel groups G3 can be used as the first AF pixel AF1 and the second AF pixel AF2 constituting the AF pixel group AG. Each of the neighboring pair of second image pixel groups G2 and third image pixel groups G3 is missing one pixel compared to the other second image pixel groups G2 and third image pixel groups G3, so that the neighboring pair of second image pixel groups G2 and third image pixel groups G3 can be used as the first peripheral image pixel group PG1 and the second peripheral image pixel group PG2, respectively.

[0070] The light-blocking pattern 25 can be arranged between pixels and on the auxiliary insulating layer 21. The light-blocking pattern 25 may not be arranged on the auxiliary insulating layer 21 between the first AF pixel AF1 and the second AF pixel AF2.

[0071] The first color filter CF1 can be disposed on the auxiliary insulating layer 21 and in the first image pixel group G1. The second color filter CF2 can be disposed on the auxiliary insulating layer 21 and in the second image pixel group G2 and the first peripheral image pixel group PG1. The third color filter CF3 can be disposed on the auxiliary insulating layer 21 and in the third image pixel group G3 and the second peripheral image pixel group PG2.

[0072] Microlens array layer 23 may be disposed on color filters CF1, CF2, CF3, and CFA. Microlens array layer 23 may include: a first microlens portion 231 disposed on image pixel PX and peripheral image pixels PX1 and PX2; and a second microlens portion 232 disposed on AF pixels AF1 and AF2. When viewed in a planar view, the first microlens portion 231 may be circular and may have a hemispherical cross-section. When viewed in a planar view, the second microlens portion 232 may be elliptical with its major axis parallel to a second direction Y, and one second microlens portion 232 may cover both the first AF pixel AF1 and the second AF pixel AF2 that are adjacent to each other. Apart from these differences, the image sensor 51 according to the present exemplary embodiment may be similar to the one described above. Figure 1A , Figure 1B , Figure 2A and Figure 2B Those that are the same or similar in the exemplary embodiments described.

[0073] exist Figure 4B In this embodiment, the deep device isolation structure 20 can be disposed in a deep trench 15 formed in the substrate 1. The deep trench 15 can be formed to extend from the second surface 1b of the substrate 1 toward the first surface 1a. In other embodiments, the deep trench 15 can be formed from the first surface 1a toward the second surface 1b, and the deep device isolation structure 20 can be disposed in the deep trench 15 to have a front deep trench isolation (FDTI) structure connecting the first surface 1a and the second surface 1b. In other embodiments, the deep device isolation structure 20 below the second microlens portion 232 can have an FDTI structure, but may not connect the first surface 1a and the second surface 1b, so as to partially isolate the substrate 1 adjacent to the second surface 1b.

[0074] Figure 5 This is a plan view showing the image sensor 52 according to an exemplary embodiment. Figure 6A It is along Figure 5 A sectional view taken by line A-A'. Figure 6B It is along Figure 5 The sectional view taken by line B-B'.

[0075] Reference Figure 5 , Figure 6A and Figure 6B The light-blocking pattern 25 disposed on the substrate 1 and between image pixel groups G1, G2, and G3 spaced apart from the AF pixel group AG can have a first width W1. However, the light-blocking pattern 25 adjacent to the AF pixel group AG can have widths W2 and W3 greater than the first width W1. Specifically, the light-blocking pattern 25 located between the first AF pixel AF1 and its adjacent first peripheral image pixel PX1 in the first direction X can extend toward the first peripheral image pixel PX1 and can have a second width W2. The light-blocking pattern 25 located between the second AF pixel AF2 and its adjacent second peripheral image pixel PX2 in the first direction X can extend toward the second peripheral image pixel PX2 and can have a second width W2. The light-blocking pattern 25 located between the first AF pixel AF1 and its adjacent image pixel PX in the third image pixel group G3 in the second direction Y can extend toward the third image pixel group G3 and can have a second width W2. The light-blocking pattern 25 located between the first AF pixel AF1 and its neighboring first peripheral image pixel PX1 in the second direction Y can extend towards the first peripheral image pixel PX1 and can have a third width W3. The second width W2 and the third width W3 can be greater than the first width W1. The third width W3 can be different from the second width W2. In this case, due to the light-blocking pattern 25, the aperture ratio of the second image pixel group G2, the third image pixel group G3, the first peripheral image pixel group PG1, and the second peripheral image pixel group PG2 adjacent to the AF pixel group AG can be reduced.

[0076] As described above, a second microlens portion 232 with a relatively large width can be disposed in the AF pixel group AG. In this case, the depth of the microlens array layer 23 can be increased between the second microlens portion 232 and the adjacent first microlens portion 231. Due to this structure of the microlens array layer 23, a relatively large amount of light can be incident on the image pixels PX, PX1, and PX2 of the second image pixel group G2, the third image pixel group G3, the first peripheral image pixel group PG1, and the second peripheral image pixel group PG2 adjacent to the AF pixel group AG, compared to the image pixels PX of the image pixel groups G1, G2, and G3 that are far from (or not adjacent to) the AF pixel group AG. Therefore, the image and sensitivity of the image pixels PX, PX1, and PX2 of the second image pixel group G2, the third image pixel group G3, the first peripheral image pixel group PG1, and the second peripheral image pixel group PG2 adjacent to the AF pixel group AG may differ from the image and sensitivity of other image pixels PX, which leads to a deterioration in the uniformity of the overall image.

[0077] However, in the image sensor 52 according to the present exemplary embodiment, the width of the light-blocking pattern 25 can be adjusted to reduce the aperture ratio of the second image pixel group, the third image pixel group G3, the first peripheral image pixel group PG1, and the second peripheral image pixel group PG2 adjacent to the AF pixel group AG. Therefore, a relatively large amount of light can be prevented from incident on the image pixels PX, PX1, and PX2 adjacent to the second image pixel group G2, the third image pixel group G3, the first peripheral image pixel group PG1, and the second peripheral image pixel group PG2, thereby obtaining an overall uniform and clear image. In other words, according to the exemplary embodiment, in order to prevent the uniformity and sensitivity of image pixels adjacent to the AF pixels from deteriorating, the desired pixel aperture or aperture characteristics can be obtained by adjusting the width of the light-blocking pattern 25. Due to these features, the image sensor 52 according to the exemplary embodiment can have high sensitivity characteristics even under low illumination conditions.

[0078] Figure 7A and Figure 7B It is along Figure 5 A sectional view taken by line A-A'.

[0079] Reference Figure 7AIn the image sensor according to the present exemplary embodiment, a light-blocking pattern 25 and a low-refractive-index pattern 27 may be located between color filters CF1, CF2, CF3, and CFA. The refractive index of the low-refractive-index pattern 27 may be less than the refractive index of color filters CF1, CF2, CF3, and CFA. In an exemplary embodiment, the refractive index of the low-refractive-index pattern 27 may be less than or equal to 1.3. The low-refractive-index pattern 27 may be formed of or comprise an organic material. The thickness of the low-refractive-index pattern 27 may be greater than the thickness of the light-blocking pattern 25. The top surfaces of color filters CF1, CF2, CF3, and CFA may be coplanar with the top surface of the low-refractive-index pattern 27. When viewed in a planar view, the low-refractive-index pattern 27 may have a grid shape. The width of the low-refractive-index pattern 27 may be equal to the width of the light-blocking pattern 25. The side surfaces of the low-refractive-index pattern 27 may be aligned with the side surfaces of the light-blocking pattern 25. Between the first AF pixel AF1 and the second AF pixel AF2, there may be no low-refractive-index pattern 27 on the substrate 1. In other words, the low-refractive pattern 27 may not be located between the AF color filters CFA. Apart from these differences, the image sensor according to the present exemplary embodiment may be the same as or similar to those in the above exemplary embodiments.

[0080] Reference Figure 7B In the image sensor according to the present embodiment, the deep device isolation structure 20 may further include an insulating layer 16 conformally covering the inner sidewalls of the deep trench 15 and a conductive pattern 18 spaced apart from the substrate 1 by the insulating layer 16. A negative voltage may be applied to the conductive pattern 18, and it may be used as a common bias line. A shallow device isolation layer 12 may be disposed in the substrate 1 and near the first surface 1a. A fixed charge layer 31 may cover the second surface 1b of the substrate 1. A light-blocking pattern 25 may be disposed on the fixed charge layer 31. The light-blocking pattern 25 and the fixed charge layer 31 may be covered by a planarization layer 33. The planarization layer 33 may include a transparent polymer layer. Color filters CF1, CF2, CF3, and CFA may be disposed on the planarization layer 33. Apart from these differences, the image sensor according to the present exemplary embodiment may be the same as or similar to those in the above exemplary embodiments.

[0081] Figure 8 This is a plan view showing the image sensor 53 according to an exemplary embodiment.

[0082] Figure 8 Image sensor 53 can be with Figure 5Similar to image sensor 52, but the width of the light-blocking pattern 25 can be increased over the boundaries of more pixels. The aperture ratio defined by the light-blocking pattern 25 can decrease as the distance from the AF pixel group AG decreases. The aperture ratio of pixels in contact with the sidewalls of the AF pixel group AG can be smaller than the aperture ratio near the corners of the AF pixel group AG or the aperture ratio of pixels far from it. Furthermore, the aperture ratio defined by the light-blocking pattern 25 can depend on the color of the color filter. For example, the aperture ratio of a first image pixel configured to be adjacent to the AF pixel group AG with a color filter CF of a first color and used for sensing the first light can be different from the aperture ratio of a second image pixel configured to be adjacent to the AF pixel group AG with a color filter CF of a second color and used for sensing the second light. Apart from these differences, image sensor 53 according to the present exemplary embodiment can be the same as or similar to those in the above exemplary embodiments.

[0083] Figure 9 This is a plan view showing the image sensor 54 according to an exemplary embodiment. Figure 10A It is along Figure 9 A sectional view taken by line A-A'. Figure 10B It is along Figure 9 The sectional view taken by line B-B'.

[0084] Reference Figure 9 , Figure 10A and Figure 10B In the image sensor 54 according to the present exemplary embodiment, when viewed in a planar view, the areas of photoelectric conversion portions 11 and 11p in the second image pixel group G2, the third image pixel group G3, the first peripheral image pixel group PG1, and the second peripheral image pixel group PG2 adjacent to the AF pixel group AG can be smaller than the areas of other photoelectric conversion portions 11 and 11a. That is, the area of ​​the peripheral photoelectric conversion portion 11p adjacent to the AF pixel group AG can be smaller than the area of ​​the AF photoelectric conversion portion 11a. Furthermore, the area of ​​the photoelectric conversion portion 11 adjacent to the AF photoelectric conversion portion 11a can be smaller than the area of ​​the AF photoelectric conversion portion 11a. Therefore, the light reception ratio of image pixels PX, PX1, and PX2 adjacent to the second image pixel group G2, the third image pixel group G3, the first peripheral image pixel group PG1, and the second peripheral image pixel group PG2 can be reduced, and thus an overall uniform and clear image is obtained. In other words, according to the exemplary embodiment, the size of the photoelectric conversion portions can be adjusted to prevent deterioration in the uniformity and sensitivity of image pixels adjacent to the AF pixels. Due to the above features, the image sensor 54 according to the exemplary embodiment can have high sensitivity characteristics even under low lighting conditions.

[0085] Figure 11This is a plan view showing the image sensor 55 according to an exemplary embodiment. Figure 12A It is along Figure 11 A sectional view taken by line A-A'. Figure 12B It is along Figure 11 The sectional view taken by line B-B'.

[0086] Reference Figure 11 , Figure 12A and Figure 12B In the image sensor 55 according to the present exemplary embodiment, each of the image pixel groups G1, G2, and G3 may include nine nona-type image pixels PX arranged in a 3×3 matrix (3 columns and 3 rows). The AF pixel group AG may include four AF pixels arranged in a 2×2 matrix. The AF pixel group AG may include two first AF pixels AF1 and two second AF pixels AF2.

[0087] The first peripheral image pixel group PG1 may have a structure in which two pixels are omitted from the 3×3 pixels of the second image pixel group G2. The second peripheral image pixel group PG2 may have a structure in which two pixels are omitted from the 3×3 pixels of the third image pixel group G3. A portion of the first peripheral image pixel group PG1 may be in contact with a portion of the second peripheral image pixel group PG2.

[0088] In other words, in a pair of adjacent second image pixel groups G2 and third image pixel groups G3, two pixels selected from the second image pixel group G2 and two pixels selected from the third image pixel group G3 can be used as the first AF pixel AF1 and the second AF pixel AF2 constituting the AF pixel group AG, respectively. Compared with other second image pixel groups G2 and third image pixel groups G3, each of the aforementioned pair of adjacent second image pixel groups G2 and third image pixel groups G3 is missing two pixels, so that the pair of adjacent second image pixel groups G2 and third image pixel groups G3 can be used as the first peripheral image pixel group PG1 and the second peripheral image pixel group PG2, respectively.

[0089] A second microlens portion 232 can cover two first AF pixels AF1 and two second AF pixels AF2. When viewed in a planar view, the second microlens portion 232 can be circular. Features related to the thickness of the microlens array layer 23 can be referenced. Figure 2A The descriptions are the same or similar. Between the first AF pixel AF1, between the second AF pixel AF2, and between the first AF pixel AF1 and the second AF pixel AF2, the light-blocking pattern 25 may not be provided on the substrate 1. Features related to the width of the light-blocking pattern 25 can be referenced. Figure 5 , Figure 6A and Figure 6BThose described are the same or similar. The planar areas of the photoelectric conversion sections 11, 11p, and 11a can be compared with those of the reference section. Figure 9 , Figure 10A and Figure 10B The described identical or similar methods differ from each other. Apart from these differences, the image sensor 55 according to this exemplary embodiment may be identical or similar to those in the above exemplary embodiments.

[0090] Figure 13 This is a plan view showing the image sensor 56 according to an exemplary embodiment. Figure 14 It is along Figure 13 A sectional view taken along line B-B'. Figure 14 The cross section intercepted by line A-A' can be compared with... Figure 12A The same or similar as shown.

[0091] Reference Figure 13 and Figure 14 According to the present exemplary embodiment, the image sensor 56 may include a first AF pixel group AG1 and a second AF pixel group AG2 disposed between a first peripheral image pixel group PG1 and a second peripheral image pixel group PG2. The first AF pixel group AG1 and the second AF pixel group AG2 may be arranged in a second direction Y. The first AF pixel group AG1 may include a first AF pixel AF1 and a second AF pixel AF2 arranged in a first direction X. The second AF pixel group AG2 may include a first AF pixel AF1 and a second AF pixel AF2 arranged in the first direction X. A light-blocking pattern 25 may be located between the first AF pixel group AG1 and the second AF pixel group AG2 and on the substrate 1. Features related to the thickness of the microlens array layer 23 may be referenced. Figure 2A Those described are the same or similar. Features related to the width of the light-blocking pattern 25 can be compared with the reference. Figure 5 , Figure 6A and Figure 6B Those described are the same or similar. The planar areas of the photoelectric conversion sections 11, 11p, and 11a can be compared with those of the reference section. Figure 9 , Figure 10A and Figure 10B The described identical or similar methods differ from each other. Apart from these differences, the image sensor 56 according to this exemplary embodiment may be identical or similar to those in the above exemplary embodiments.

[0092] Figure 15 This is a plan view showing the image sensor 57 according to an exemplary embodiment. Figure 16 It is along Figure 15 A sectional view taken along line B-B'. Figure 16 The cross section intercepted by line A-A' can be compared with... Figure 12A The same or similar as shown.

[0093] Reference Figure 15 and Figure 16 In the image sensor 57 according to the present exemplary embodiment, each of the image pixel groups G1, G2, and G3 may include nine nona-type image pixels PX arranged in a 3×3 matrix. The AF pixel group AG may include six AF pixels arranged in a 2×3 matrix. The AF pixel group AG may include three first AF pixels AF1 and three second AF pixels AF2.

[0094] The first peripheral image pixel group PG1 may have a structure in which three pixels are omitted from the 3×3 pixels of the second image pixel group G2. The second peripheral image pixel group PG2 may have a structure in which three pixels are omitted from the 3×3 pixels of the third image pixel group G3. The first peripheral image pixel group PG1 may be spaced apart from the second peripheral image pixel group PG2 (or not adjacent to or in contact with the second peripheral image pixel group PG2).

[0095] In other words, in a pair of adjacent second image pixel groups G2 and third image pixel groups G3, three pixels selected from the second image pixel group G2 and three pixels selected from the third image pixel group G3 can be used as the first AF pixel AF1 and the second AF pixel AF2 constituting the AF pixel group AG, respectively. Compared with other second image pixel groups G2 and other third image pixel groups G3, each of the aforementioned pair of adjacent second image pixel groups G2 and third image pixel groups G3 is missing three pixels, such that the adjacent pair of second image pixel groups G2 and third image pixel groups G3 can be used as the first peripheral image pixel group PG1 and the second peripheral image pixel group PG2, respectively.

[0096] A second microlens portion 232 can cover three first AF pixels AF1 and three second AF pixels AF2. Features related to the thickness of the microlens array layer 23 can be compared with a reference. Figure 2A Those described are the same or similar. The light-blocking pattern 25 may not be provided on the substrate 1 between the first AF pixels AF1, between the second AF pixels AF2, and between the first AF pixels AF1 and the second AF pixels AF2. Features related to the width of the light-blocking pattern 25 can be compared with those in the reference. Figure 5 , Figure 6A and Figure 6B Those described are the same or similar. The planar areas of the photoelectric conversion sections 11, 11p, and 11a can be compared with those of the reference section. Figure 9 , Figure 10A and Figure 10B The described identical or similar methods differ from each other. Apart from these differences, the image sensor 57 according to this exemplary embodiment may be identical or similar to those in the above exemplary embodiments.

[0097] Figure 17 This is a plan view showing the image sensor 58 according to an exemplary embodiment. Figure 18 It is along Figure 17 A sectional view taken along line B-B'. Figure 17 The cross section intercepted by line A-A' can be compared with... Figure 12A The same or similar as shown.

[0098] Reference Figure 17 and Figure 18 According to the present exemplary embodiment, the image sensor 58 may include a first AF pixel group AG1, a second AF pixel group AG2, and a third AF pixel group AG3 disposed between a first peripheral image pixel group PG1 and a second peripheral image pixel group PG2. The first AF pixel group to the third AF pixel group AG1, AG2, and AG3 may be arranged in a second direction Y. Each of the first AF pixel group to the third AF pixel group AG1, AG2, and AG3 may include a first AF pixel AF1 and a second AF pixel AF2 arranged in a first direction X. A light-blocking pattern 25 may be located on the substrate 1 and between the first AF pixel group to the third AF pixel group AG1, AG2, and AG3. Features related to the thickness of the microlens array layer 23 may be referenced. Figure 2A Those described are the same or similar. Features related to the width of the light-blocking pattern 25 can be compared with the reference. Figure 5 , Figure 6A and Figure 6B Those described are the same or similar. The planar areas of the photoelectric conversion sections 11, 11p, and 11a can be compared with those of the reference section. Figure 9 , Figure 10A and Figure 10B The described identical or similar methods differ from each other. Apart from these differences, the image sensor 58 according to this exemplary embodiment may be identical or similar to those in the above exemplary embodiments.

[0099] According to one or more exemplary embodiments, the size of the microlens can be adjusted to control the size of the pixel aperture. In embodiments, each of the image sensors 50-58 can have a high resolution (e.g., 100M pixels).

[0100] Figure 19 This is a cross-sectional view showing a semiconductor packaging module 2000 according to an exemplary embodiment.

[0101] Reference Figure 19In the semiconductor packaging module 2000 according to the present exemplary embodiment, a semiconductor package 1000g can be attached to a package substrate 500 via a first adhesive layer 545. The semiconductor package 1000g may include a first semiconductor chip 100, a second semiconductor chip 200 disposed below the first semiconductor chip 100, and a third semiconductor chip 300 disposed below the second semiconductor chip 200. The first to third semiconductor chips 100, 200, and 300 may have different functions. The first semiconductor chip 100 and the second semiconductor chip 200 may have substantially the same width. The sidewalls of the first semiconductor chip 100 and the second semiconductor chip 200 may be vertically aligned with each other. The first semiconductor chip 100 and the second semiconductor chip 200 may be in contact with each other. A redistribution pattern 203 may be provided below the second semiconductor chip 200.

[0102] The first semiconductor chip 100 may be an image sensor chip, which includes a reference... Figures 1A to 18 One of the image sensors described. The second semiconductor chip 200 may be a logic chip used to operate the first semiconductor chip 100. The width of the third semiconductor chip 300 may be smaller than the width of the second semiconductor chip 200. That is, the sidewalls of the third semiconductor chip 300 may not be vertically aligned with the sidewalls of the second semiconductor chip 200. For example, the third semiconductor chip 300 may be a memory chip used to store data generated by the first semiconductor chip 100 or the second semiconductor chip 200. In an exemplary embodiment, the third semiconductor chip 300 may be a DRAM chip. The side surface of the third semiconductor chip 300 and the bottom surface of the second passivation layer 205 may be covered with a molding layer 450.

[0103] In the current exemplary embodiment, the logic chip can be bonded to the image sensor chip, and the memory chip can be bonded to the logic chip using a flip-chip bonding method. In this case, a faster readout function can be achieved compared to a case where the memory chip is arranged away from the image sensor chip. When the memory chip is a DRAM chip, the location and standard of the input / output terminals can be standardized for mass production and low cost. However, in this case, the size and location of the input / output terminals of the logic chip and the DRAM chip can differ from each other. According to the exemplary embodiment, since the second semiconductor chip 200 (which can be a logic chip) includes a redistribution pattern 203, the degrees of freedom can be increased when configuring the interconnect structure between the second semiconductor chip 200 and the third semiconductor chip 300.

[0104] A first upper conductive pad 130 of the first semiconductor chip 100 can be connected to a package substrate 500 via a wire 530. A support 520 can be disposed on the package substrate 500. The support 520 can be spaced apart from the semiconductor package 1000g. The support 520 can be attached to the package substrate 500 via a second adhesive layer 540. When viewed in plan view, the support 520 can have a closed ring shape. The support 520 can be adjacent to the edge of the semiconductor package 1000g and can have a hollow structure. The support 520 can be formed of a polymer material (e.g., polyamide). A transparent substrate 560 can be disposed on the support 520. The transparent substrate 560 can be formed of a transparent material (e.g., glass or plastic). The transparent substrate 560 can be spaced apart from the semiconductor package 1000g, thus creating an empty space S between them. Solder bumps 570 can be attached to the bottom surface of the package substrate 500. Multiple lenses 600 and 610, spacers 630, and blocking layers 620 can be disposed on the transparent substrate 560. The semiconductor package module 2000 can have a field of view (FOV) characteristic of greater than 20° and less than 100°.

[0105] Figure 20 This is a plan view showing a mobile phone 3000 according to an exemplary embodiment.

[0106] Reference Figure 20 The mobile phone 3000 according to an exemplary embodiment may include Figure 19 The semiconductor package module 2000. The camera of the mobile phone 3000 can operate in three modes: a first mode, a second mode, and a third mode. The first mode can be a full-resolution mode, and the image obtained in the first mode can have high resolution and high image quality. The second mode can be a resolution mode whose resolution is lower than that of the first mode (e.g., a medium-resolution mode), and the resolution of the image obtained in the second mode can be less than or equal to 1 / 2 of the resolution of the image obtained in the first mode. The third mode can be a resolution mode whose resolution is lower than that of the first and second modes (e.g., a low-resolution mode), and the resolution of the image obtained in the third mode can be less than or equal to 1 / 6 of the resolution of the image obtained in the first mode. This can be achieved by referring to... Figures 1A to 18 The image sensor described performs a pixel-merging operation to obtain these patterns. In the pixel-merging operation, electrical signals generated by all image pixels passing through the image sensor can be sensed, but the average of each group or multiple groups with the same color can be output.

[0107] According to an exemplary embodiment, light blocking patterns may not be provided between the AF pixels of the image sensor, thereby increasing phase detection efficiency even if the number of AF pixels is small.

[0108] Additionally, the AF pixel groups of the image sensor can be configured to span between a first image pixel group and a second image pixel group that are adjacent to each other and have different colors, thereby increasing signal processing efficiency and improving pixel binning and HDR features.

[0109] Furthermore, in an image sensor, the width of the light-blocking pattern can be adjusted to obtain the desired pixel aperture, or the area of ​​the photoelectric conversion section can be adjusted to compensate for the heterogeneity and sensitivity characteristics of image pixels adjacent to the AF pixel. Therefore, a uniform and clear image can be obtained overall. Additionally, the sensitivity of the image sensor can be improved even under low-light conditions.

[0110] It should be understood that the features of each of the above exemplary embodiments can be combined with any feature of any other above exemplary embodiment.

[0111] While exemplary embodiments have been specifically shown and described, one of those skilled in the art will understand that changes in form and detail may be made therein without departing from the spirit and scope of the claims.

Claims

1. An image sensor comprising: groups of pixels two-dimensionally arranged on a substrate, each of the groups of pixels comprising a plurality of pixels; and a light-blocking pattern located on the substrate and between pixels in the plurality of pixels, wherein the groups of pixels comprise: a first group of image pixels configured to sense a first light; a second group of image pixels configured to sense a second light; and a group of autofocus pixels configured to detect a phase, wherein the group of autofocus pixels comprises a first autofocus pixel and a second autofocus pixel adjacent to each other, wherein there is no light-blocking pattern on the substrate between the first autofocus pixel and the second autofocus pixel, wherein the image sensor further comprises: a first group of peripheral image pixels between the first autofocus pixel and a nearest first group of image pixels of the first group of image pixels closest to the first autofocus pixel, the first group of peripheral image pixels comprising fewer pixels than the nearest first group of image pixels; and a second group of peripheral image pixels between the second autofocus pixel and a nearest second group of image pixels of the second group of image pixels closest to the second autofocus pixel, the second group of peripheral image pixels comprising fewer pixels than the nearest second group of image pixels, wherein the first group of peripheral image pixels is configured to sense the second light, wherein the second group of peripheral image pixels is configured to sense the first light, wherein the image sensor further comprises: a microlens array layer located on the substrate to cover the light-blocking pattern, wherein the microlens array layer has a first thickness between the first group of peripheral image pixels and the group of autofocus pixels and a second thickness between the first group of peripheral image pixels and the nearest first group of image pixels, and wherein the first thickness is less than the second thickness.

2. The image sensor of claim 1, further comprising: a microlens array layer located on the substrate to cover the light-blocking pattern, wherein a first distance from a top end of the microlens array layer to the substrate measured between the first group of peripheral image pixels and the group of autofocus pixels is less than a second distance from the top end of the microlens array layer to the substrate measured between the first group of peripheral image pixels and the nearest first group of image pixels.

3. The image sensor of claim 1, wherein: each of the first group of image pixels and the second group of image pixels comprises n x m first image pixels; each of the first group of peripheral image pixels and the second group of peripheral image pixels comprises a first peripheral image pixel, a number of the first peripheral image pixels being greater than or equal to (n x m) / 2 and less than or equal to (n x m) - 1; and n and m are each independent natural numbers greater than or equal to 2.

4. The image sensor of claim 1, further comprising: a microlens array layer located on the substrate to cover the light-blocking pattern, wherein the microlens array layer comprises: a first microlens portion over the first image pixel group, the second image pixel group, the first peripheral image pixel group, and the second peripheral image pixel group, respectively; and a second microlens portion over the autofocus pixel group, and wherein the second microlens portion covers both the first autofocus pixel and the second autofocus pixel.

5. The image sensor of claim 1, wherein: the light-blocking pattern has a first width in an area between the nearest first image pixel group and the first peripheral image pixel group; the light-blocking pattern has a second width in an area between the first peripheral image pixel group and the autofocus pixel group; and the second width is greater than the first width.

6. The image sensor of claim 5, wherein: the light-blocking pattern has a third width in an area between the second peripheral image pixel group and the autofocus pixel group; the third width is greater than the first width; and the third width is different from the second width.

7. The image sensor of claim 1, wherein: the first peripheral image pixel group includes a first peripheral image pixel; a first peripheral phototransduction portion in the first peripheral image pixel is located in the substrate; the first autofocus pixel includes a first autofocus phototransduction portion located in the substrate; and an area of the first peripheral phototransduction portion is less than an area of the first autofocus phototransduction portion when viewed in plan view.

8. The image sensor of claim 1, wherein: the first peripheral image pixel group includes a first peripheral image pixel; each of the first image pixel group includes a first image pixel; a first peripheral phototransduction portion in the first peripheral image pixel is located in the substrate; a first phototransduction portion in the first image pixel is located in the substrate; and an area of the first peripheral phototransduction portion is less than an area of the first phototransduction portion when viewed in plan view.

9. The image sensor of claim 1, further comprising: a first color filter over the substrate and in the second image pixel group and the first peripheral image pixel group; a second color filter over the substrate and in the first image pixel group and the second peripheral image pixel group; and at least one third color filter over the substrate and in the autofocus pixel group, wherein a color of the at least one third color filter is the same as a color of the first color filter or is colorless and transparent.

10. The image sensor of claim 9, wherein: the first color filter includes a green dye; and the second color filter includes a red dye or a blue dye.

11. The image sensor of claim 1, wherein: ​ The autofocus pixel group is one of a plurality of autofocus pixel groups, each of the plurality of autofocus pixel groups including the first autofocus pixel and the second autofocus pixel; and A total number of the first autofocus pixel and the second autofocus pixel in the plurality of autofocus pixel groups is 0.5% to 10% of a total number of the plurality of pixels.

12. An image sensor comprising: a group of pixels arranged two-dimensionally on a substrate, each of the group of pixels including a plurality of pixels; and a microlens array layer covering the substrate; wherein the plurality of pixels are separated from each other by a deep device isolation structure in the substrate, wherein each of the plurality of pixels includes a photoelectric conversion portion disposed in the substrate, wherein the group of pixels includes: a group of image pixels; a group of autofocus pixels configured to detect a phase; and a first group of peripheral image pixels between the group of autofocus pixels and a nearest group of image pixels in the group of image pixels that is closest to the group of autofocus pixels, and wherein a first distance from a top end of the microlens array layer to the substrate measured between the first group of peripheral image pixels and the group of autofocus pixels is less than a second distance from the top end of the microlens array layer to the substrate measured between the first group of peripheral image pixels and the nearest group of image pixels.

13. The image sensor of claim 12, wherein: the microlens array layer has a first thickness between the first group of peripheral image pixels and the group of autofocus pixels and a second thickness between the first group of peripheral image pixels and the nearest group of image pixels; and the first thickness is less than the second thickness.

14. The image sensor of claim 12, further comprising: a light blocking pattern between the group of pixels and between the substrate and microlens array layer, wherein the group of autofocus pixels includes a first autofocus pixel adjacent to the first group of peripheral image pixels and a second autofocus pixel separate from the first group of peripheral image pixels, wherein there is no light blocking pattern on the substrate between the first autofocus pixel and the second autofocus pixel, and wherein: the first group of peripheral image pixels includes a plurality of first peripheral image pixels; a first peripheral image pixel of the plurality of first peripheral image pixels includes a first peripheral photoelectric conversion portion disposed in the substrate; the first autofocus pixel includes a first autofocus photoelectric conversion portion disposed in the substrate; and an area of the first peripheral photoelectric conversion portion is less than an area of the first autofocus photoelectric conversion portion when viewed in a plan view.

15. An image sensor comprising: a group of pixels arranged two-dimensionally on a substrate, each of the group of pixels including a plurality of pixels, wherein the group of pixels includes: a group of image pixels; a group of autofocus pixels configured to detect a phase; and a peripheral image pixel group between the autofocus pixel group and a nearest image pixel group of the image pixel groups closest to the autofocus pixel group, wherein the peripheral image pixel group includes a plurality of peripheral image pixels, wherein the autofocus pixel group includes a plurality of autofocus pixels, wherein a peripheral image pixel of the peripheral image pixels includes a peripheral photoelectric conversion portion in the substrate, wherein an autofocus pixel of the autofocus pixels includes an autofocus photoelectric conversion portion in the substrate, and wherein an area of the peripheral photoelectric conversion portion is smaller than an area of the autofocus photoelectric conversion portion when viewed in plan view.

16. The image sensor of claim 15, wherein: each of the image pixel groups includes a plurality of photoelectric conversion portions in the substrate; and an area of the peripheral photoelectric conversion portion is smaller than an area of each of the plurality of photoelectric conversion portions when viewed in plan view.

17. The image sensor of claim 15, further comprising: a microlens array layer on the substrate; wherein a first distance from a top end of the microlens array layer to the substrate measured between the peripheral image pixel group and the autofocus pixel group is smaller than a second distance from the top end of the microlens array layer to the substrate measured between the peripheral image pixel group and the nearest image pixel group.

18. The image sensor of claim 15, further comprising: a light blocking pattern on the substrate and between the pixel groups, wherein the autofocus pixel group includes a first autofocus pixel and a second autofocus pixel adjacent to each other, and wherein there is no light blocking pattern on the substrate between the first autofocus pixel and the second autofocus pixel.

19. An image sensor comprising: pixel groups two-dimensionally arranged on a substrate, each of the pixel groups including a plurality of pixels; and a light blocking pattern on the substrate and between the pixels of the plurality of pixels, wherein the pixel groups include: a first image pixel group configured to sense a first light; a second image pixel group configured to sense a second light; an autofocus pixel group configured to detect a phase and including a first autofocus pixel and a second autofocus pixel adjacent to each other; a first peripheral image pixel group between the first autofocus pixel and a nearest first image pixel group of the first image pixel groups closest to the first autofocus pixel, the first peripheral image pixel group including fewer pixels than the nearest first image pixel group; and a second peripheral image pixel group between the second autofocus pixel and a nearest second image pixel group of the second image pixel groups closest to the second autofocus pixel, the second peripheral image pixel group including fewer pixels than the nearest second image pixel group, wherein the first peripheral image pixel group is configured to sense the second light, wherein the second peripheral image pixel group is configured to sense the first light, wherein the image sensor further includes: a microlens array layer disposed on the substrate to cover the light blocking pattern, wherein the microlens array layer has a first thickness between the first peripheral image pixel group and the autofocus pixel group and a second thickness between the first peripheral image pixel group and the nearest first image pixel group, and wherein the first thickness is smaller than the second thickness.

20. The image sensor of claim 19, further comprising: a microlens array layer disposed on the substrate to cover the light blocking pattern, wherein a first distance from a top end of the microlens array layer to the substrate measured between the first peripheral image pixel group and the autofocus pixel group is smaller than a second distance from the top end of the microlens array layer to the substrate measured between the first peripheral image pixel group and the nearest first image pixel group.

21. The image sensor of claim 19, wherein: each of the first image pixel group and the second image pixel group includes n x m first image pixels; each of the first peripheral image pixel group and the second peripheral image pixel group includes a first peripheral image pixel in a number greater than or equal to (n x m) / 2 and smaller than or equal to (n x m) - 1; and n and m are each an independent natural number greater than or equal to 2.

22. The image sensor of claim 19, further comprising: a microlens array layer disposed on the substrate to cover the light blocking pattern, wherein the microlens array layer includes: a first microlens portion disposed on the first image pixel group, the second image pixel group, the first peripheral image pixel group, and the second peripheral image pixel group, respectively; and a second microlens portion disposed on the autofocus pixel group, and wherein the second microlens portion covers both the first autofocus pixel and the second autofocus pixel.

Images