Silicon wafer adsorption device and laser annealing equipment

Abstract

The present invention discloses a silicon wafer adsorption device and a laser annealing device. The silicon wafer adsorption device has an adsorption surface capable of adsorbing silicon wafers, and also includes an identification difference piece, which is arranged on the silicon wafer adsorption device to form an identification area. The adsorption surface includes an adsorption area, and the adsorption area is configured to be able to adsorb and fix the silicon wafer. The identification area is arranged adjacent to the adsorption area. After the silicon wafer is adsorbed and fixed by the adsorption area, the edge of the silicon wafer at least partially falls into the identification area, and the identification area and the silicon wafer have different machine recognition degrees. The above-mentioned silicon wafer adsorption device can improve the accuracy and efficiency of silicon wafer edge extraction, and the silicon wafer and the suction cup are highly aligned, which is conducive to improving the production capacity of the laser annealing equipment. Accordingly, the present invention also provides a laser annealing equipment.

Description

Technical Field

[0001] The present invention relates to the field of integrated circuit manufacturing, and in particular to a silicon wafer adsorption device and laser annealing equipment. Background Art

[0002] In the laser annealing process, the edge of the silicon wafer needs to be accurately identified to ensure the accuracy of the laser annealing process. The suction cups of traditional laser annealing equipment are all made of silicon carbide. The color of the silicon carbide suction cup is the same as the color of the silicon wafer (mostly color-bearing, mainly black), making it difficult for the detection device to distinguish between the silicon wafer and the suction cup, and unable to identify the position of the silicon wafer and the suction cup. The accuracy of silicon wafer edge extraction is low, resulting in a low success rate of silicon wafer alignment, which requires repeated debugging and calibration. The alignment efficiency of the silicon wafer and the suction cup is low, affecting the production capacity of the laser annealing equipment. Summary of the invention

[0003] One purpose of the present invention is to provide a silicon wafer adsorption device, which can improve the accuracy and efficiency of silicon wafer edge extraction, and has high efficiency in aligning the silicon wafer with the suction cup, which is beneficial to improving the production capacity of laser annealing equipment.

[0004] Another object of the present invention is to provide a laser annealing device that can improve the alignment efficiency between the silicon wafer and the suction cup and has high equipment production capacity.

[0005] To achieve this object, on the one hand, the present invention adopts the following technical solutions:

[0006] A silicon wafer adsorption device has an adsorption surface capable of adsorbing silicon wafers, and also includes an identification difference piece, which is arranged on the silicon wafer adsorption device and is used to form an identification area. The adsorption surface includes the adsorption area, and the adsorption area is configured to be capable of adsorbing and fixing the silicon wafer. The identification area is arranged adjacent to the adsorption area. After the silicon wafer is adsorbed and fixed by the adsorption area, the edge of the silicon wafer at least partially falls into the identification area, and the identification area and the silicon wafer have different machine recognition degrees.

[0007] In one embodiment, different machine recognition levels include color difference recognition and / or light reflectivity difference recognition; the color of the identification area is different from the color of the silicon wafer; and / or the light reflectivity of the identification area is different from the light reflectivity of the silicon wafer.

[0008] In one embodiment, the color of the logo area is white, gold, silver or yellow.

[0009] In one embodiment, the reflectivity of the marking area to light with a wavelength of 400 nm to 800 nm is greater than 40%.

[0010] In one embodiment, the marking area is made of at least one of ceramic oxide steel, mold steel and zirconium oxide.

[0011] In one embodiment, the marking area is annular, and at least one notch is radially formed on the annular marking area.

[0012] In one embodiment, the width of the notch is 0.2 mm to 3 mm.

[0013] In one of the embodiments, the silicon wafer adsorption device further comprises a base, the annular identification area comprises an identification ring, an annular installation area is arranged on the base, and the identification ring is arranged in the installation area.

[0014] In one embodiment, the identification ring is fixed in the installation area by gluing or mechanical fixing.

[0015] In one of the embodiments, after the silicon wafer is adsorbed and fixed by the adsorption area, at least three edge points of the edge of the silicon wafer fall into the marking area.

[0016] In one of the embodiments, the loading direction of the silicon wafer is 0°, and after the silicon wafer is adsorbed and fixed by the adsorption area, the edge of the silicon wafer is located at the edge points of 0°, 90°, 180° and 270°; and / or, the edge points of the silicon wafer are located at 45°, 135°, 225° and 315° and fall within the marking area.

[0017] In one of the embodiments, after the silicon wafer is adsorbed and fixed by the adsorption area, the positioning opening of the silicon wafer falls into the marking area.

[0018] In one embodiment, the surface height of the marking area is the same as the surface height of the adsorption area.

[0019] In one embodiment, the identification area includes a plurality of identification rings superimposed along the axial direction.

[0020] In one embodiment, the plurality of identification rings are bonded to each other.

[0021] In one embodiment, the radial width of the identification area is not unique.

[0022] On the other hand, the present invention further provides a laser annealing device, comprising any of the above-mentioned silicon wafer adsorption devices.

[0023] The above-mentioned silicon wafer adsorption device includes an identification difference piece, which is arranged on the silicon wafer adsorption device to form an identification area. The identification area is arranged adjacent to the adsorption area, and the identification area and the silicon wafer have different machine recognition degrees. After the silicon wafer is adsorbed and fixed by the adsorption area, the edge of the silicon wafer at least partially falls into the identification area. Since the machine recognition degrees of the identification area and the silicon wafer are different, the detection device can quickly and accurately identify the edge of the silicon wafer, which can effectively improve the accuracy and efficiency of silicon wafer edge extraction, thereby improving the alignment efficiency of the silicon wafer and the suction cup, and improving the production capacity of the laser annealing equipment.

[0024] The laser annealing equipment mentioned above has the beneficial effects of high alignment efficiency between the silicon wafer and the suction cup and high equipment production capacity by applying the silicon wafer adsorption device mentioned above. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 is a schematic structural diagram of a silicon wafer adsorption device in an embodiment;

[0026] Figure 2 is a structural cross-sectional view of a silicon wafer adsorption device in one embodiment;

[0027] Figure 3 It is a schematic diagram of the structure of the identification ring in an embodiment.

[0028] In the figure:

[0029] 11 - adsorption area, 12 - identification area, 121 - notch, 122 - identification ring, 20 - base. DETAILED DESCRIPTION

[0030] The technical solution of the present invention is further described below with reference to the accompanying drawings and through specific implementation methods.

[0031] In the description of the present invention, it should be understood that the terms "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside" and "outside" etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0032] Please also see Figures 1 to 3 The silicon wafer adsorption device of one embodiment has an adsorption surface capable of adsorbing the silicon wafer, and also includes a marking difference piece, which is arranged on the silicon wafer adsorption device to form a marking area 12. The adsorption surface includes an adsorption area 11, and the adsorption area 11 is configured to adsorb and fix the silicon wafer. The marking area 12 is arranged adjacent to the adsorption area 11. After the silicon wafer is adsorbed and fixed by the adsorption area 11, the edge of the silicon wafer at least partially falls into the marking area 12, and the marking area 12 and the silicon wafer have different machine recognition degrees.

[0033] The above-mentioned silicon wafer adsorption device includes an identification difference piece, which is arranged on the silicon wafer adsorption device and is used to form an identification area 12. The identification area 12 is arranged adjacent to the adsorption area 11. The identification area 12 and the silicon wafer have different machine recognition degrees. After the silicon wafer is adsorbed and fixed by the adsorption area 11, the edge of the silicon wafer at least partially falls into the identification area 12. Since the machine recognition degrees of the identification area 12 and the silicon wafer are different, the detection device can quickly and accurately identify the edge of the silicon wafer, which can effectively improve the accuracy and efficiency of silicon wafer edge extraction, thereby improving the alignment efficiency of the silicon wafer and the suction cup, and improving the production capacity of the laser annealing equipment. Specifically, in this scheme, the machine recognition degree mainly refers to the machine vision recognition degree.

[0034] In one embodiment, different machine recognition degrees include light reflectivity difference recognition, and different machine recognition degrees are provided between the identification area 12 and the silicon wafer through the light reflectivity difference. The light reflectivity of the identification area 12 is different from the light reflectivity of the silicon wafer. After the silicon wafer is adsorbed and fixed, different light reflection differences will be formed between the edge of the silicon wafer and the identification area 12, which is convenient for the detection device to identify. The detection device can quickly and accurately identify the edge of the silicon wafer. Specifically, in one embodiment, the light reflectivity of the identification area 12 is at least 40%, and more preferably, the light reflectivity of the identification area 12 can be 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, 95%, 100%. Specifically, in one embodiment, the light reflectivity of the identification area 12 is for light with a wavelength of 400nm to 800nm, and more specifically, it can be for light with a wavelength of 450nm to 550nm.

[0035] In another embodiment, different machine recognition degrees include color difference recognition, and different machine recognition degrees are provided by color difference between the identification area 12 and the silicon wafer. The color of the identification area 12 is different from the color of the silicon wafer, and the identification area 12 is made of a material of a different color from the silicon wafer, so that there is a significant color difference between the identification area 12 and the silicon wafer, which is convenient for the detection device to identify. After the silicon wafer is adsorbed and fixed, a color difference is formed between the edge of the silicon wafer and the identification area 12, and the detection device can quickly and accurately identify the edge of the silicon wafer. Specifically, in one embodiment, the color of the identification area 12 is white, gold, silver or yellow.

[0036] In the above embodiment, different machine recognitions are provided by light reflectivity differences or color differences. The identification area 12 has a different light reflectivity or color from the silicon wafer to form different machine recognitions. However, in other embodiments, the machine recognition may also include both color and light reflectivity. At the same time, different machine recognitions are provided by light reflectivity differences and color differences. The light reflectivity and color of the identification area 12 are different from those of the silicon wafer to enhance the machine recognition and further ensure the extraction accuracy and efficiency of the silicon wafer edge. The above machine recognition differences only include color differences or light reflectivity differences, which is only a specific embodiment and is not specifically limited. Specifically, the identification area 12 is preferably made of a metal material with a low thermal expansion coefficient, which can effectively provide machine contrast while also having good durability. Further, in one embodiment, the identification area 12 is made of at least one of ceramic steel oxide, mold steel, and zirconium oxide.

[0037] In one embodiment, the marking area 12 is annular, and at least one notch 121 is radially opened on the annular marking area 12. Specifically, the notch 121 can compensate for expansion deformation when the marking area 12 expands due to heat, so as to avoid interference between the marking area 12 and the adsorption area 11 caused by the temperature rise during the laser annealing process, thereby improving the reliability of the silicon wafer adsorption device and further improving the accuracy of silicon wafer alignment.

[0038] In one embodiment, the width of the notch 121 is 0.2 mm to 3 mm. Specifically, in one embodiment, the width of the notch 121 is increased and changed at a fixed numerical interval between 0.2 mm and 3 mm. For example, in one embodiment, the width of the notch 121 is increased and changed by 0.05 mm. The width of the notch 121 is any value between 0.2 mm, 0.25 mm, 0.3 mm ... 3 mm. In other embodiments, the width of the notch 121 can also be increased and changed by 0.1 mm, 0.2 mm or other values, which is not specifically limited in this embodiment. Further, in one embodiment, the width of the notch 121 is 1 mm.

[0039] In one embodiment, the silicon wafer adsorption device further includes a base 20, the annular identification area 12 includes an identification ring 122, an annular installation area is provided on the base 20, and the identification ring 122 is arranged in the installation area. Specifically, the identification difference piece is the identification ring 122, and the identification ring 122 is arranged on the silicon wafer adsorption device to form an annular identification area 12. The adsorption area 11 includes a suction cup, specifically, the suction cup can be but not limited to a microporous suction cup, the suction cup is arranged on the base 20, the annular installation area on the base 20 is an annular installation groove surrounding the outside of the suction cup, and the identification ring 122 is arranged in the installation groove and surrounded by the outer ring of the suction cup. The silicon wafer adsorption device has a simple structure and is easy to install. When the silicon wafer adsorption device is installed, the suction cup is fixedly installed on the base 20, and then the identification ring 122 is installed in the installation groove and the identification ring 122 is fixed to the base 20.

[0040] In this embodiment, the identification difference member is an identification ring 122. It should be noted that in other embodiments, the identification difference member may also be a plurality of identification blocks, which are arranged at intervals along the circumferential direction on the silicon wafer adsorption device to form an annular identification area 12. Specifically, the identification blocks may be in any shape such as a circle, an ellipse, a quadrilateral, a polygon, a sector or a heterogeneous structure.

[0041] In one embodiment, the identification ring 122 is fixed in the installation area by gluing, and the identification ring 122 is bonded to the base 20 to ensure that the identification ring 122 is installed stably and reliably. Furthermore, in other embodiments, the identification ring 122 can also be fixed in the installation area by mechanical fixing methods, such as bolt fastening, clamping or riveting. Any fixing method in the prior art that can realize the fixing of the identification ring 122 on the base 20 should fall within the protection scope of the present invention, and the above embodiments do not make specific limitations.

[0042] In one embodiment, after the silicon wafer is adsorbed and fixed by the adsorption area 11, from the machine vision direction, at least three edge points of the edge of the silicon wafer fall into the identification area 12. Specifically, the three edge points refer to three edge points that can be distinguished by machine vision. Furthermore, the identification area 12 can be at least one triangle, quadrilateral, polygon, circle, ellipse, a section of a circular ring, or various special-shaped structures. Specifically, in order to ensure the accuracy of silicon wafer edge extraction, the identification area 12 needs to cover the edge of the silicon wafer as evenly as possible. During the assembly process of the silicon wafer adsorption device, if the identification ring 122 can be set concentrically with the suction cup, it can be ensured that the edge of the silicon wafer falls into the identification area 12 after being adsorbed and fixed. However, the concentric alignment operation of the identification ring 122 and the suction cup is complicated, which affects the installation efficiency. In this embodiment, the identification area 12 covers at least three edge points of the silicon wafer. After the silicon wafer is adsorbed and fixed by the adsorption area 11, at least three edge points of the edge of the silicon wafer fall into the identification area 12. The center of the silicon wafer can be determined by at least three edge points, and then the edge of the silicon wafer can be determined. In the present embodiment, during the assembly of the silicon wafer adsorption device, it is sufficient to ensure that the marking area 12 can cover at least three edge points of the silicon wafer after installation. There is no need to perform complicated concentric alignment operations between the marking ring 122 and the suction cup. This can not only ensure the accuracy of silicon wafer edge extraction, but also help improve the installation efficiency of the silicon wafer adsorption device.

[0043] In one embodiment, the loading direction of the silicon wafer is 0°, and after the silicon wafer is fixed by the adsorption area 11, the edge points of the silicon wafer at 0°, 90°, 180° and 270° or the edge points of the silicon wafer at 45°, 135°, 225° and 315° fall into the marking area 12. Generally, the silicon wafer is loaded at 0° or 45°. In this embodiment, the marking area 12 is set at the position where four silicon wafer edge points are set at 90° intervals with the loading direction as the reference point after the silicon wafer is fixed by adsorption. The marking area 12 covers four edge points distributed in a cross shape, which can easily and quickly determine the center position of the silicon wafer, and ensure the efficiency and accuracy of silicon wafer edge extraction.

[0044] Furthermore, in one embodiment, the identification area 12 can also be set to correspond to eight edge points at the same time, that is, after the silicon wafer is adsorbed and fixed by the adsorption area 11, the edge points of the silicon wafer at 0°, 90°, 180° and 270° and the edge points of the silicon wafer at 45°, 135°, 225° and 315° all fall into the identification area 12, so that the silicon wafer edge extraction operation can be performed quickly and accurately regardless of whether the wafer is mounted at 0° or 45°, which is beneficial to improving the versatility of the silicon wafer adsorption device.

[0045] Further, in one embodiment, after the silicon wafer is fixed by the adsorption area 11, the positioning port of the silicon wafer falls into the identification area 12. Generally, a positioning port is provided on the silicon wafer, and therefore, the distribution of the identification area 12 needs to consider the edge recognition of the positioning port. In this embodiment, the identification area 12 is provided at the position where the positioning port is located after the silicon wafer is fixed by adsorption. After the silicon wafer is fixed by the adsorption area, the positioning port of the silicon wafer falls into the identification area 12, and the edge of the positioning port can be accurately identified and extracted, thereby ensuring the accuracy of the silicon wafer edge extraction.

[0046] In one embodiment, to ensure alignment accuracy and wafer adsorption stability, the surface height of the marking region 12 is the same as the surface height of the adsorption region 22 .

[0047] In one embodiment, the identification area 12 includes a plurality of identification rings 122 that are stacked along the axial direction. The plurality of identification rings 122 are stacked along the axial direction, so that the number of identification rings 122 can be increased or decreased according to the thickness of the suction cup, so that the thickness of the identification area 12 is the same as the thickness of the suction cup, and there is no need to produce a plurality of identification rings 122 of different thickness specifications. By increasing or decreasing the number of identification rings 122, it is possible to adapt to suction cups of different thickness sizes, which is conducive to cost saving.

[0048] Furthermore, in one embodiment, the multiple identification rings 122 are bonded to ensure that the multiple identification rings 122 stacked along the axial direction are stably and reliably connected. Of course, in other embodiments, the multiple identification rings 122 can also be connected and fixed by bolt fastening or clamping, etc., which is not specifically limited in this embodiment.

[0049] In one embodiment, the radial width of the marking area 12 is not unique. Specifically, the radial width of the marking area 12 varies with the laser scanning path, the width of the marking area 12 located in the laser scanning path area is smaller than the width of the marking area located in the non-laser scanning path area, and the width of the marking area 12 located in the laser scanning path area is narrower, so that a gap is formed between the marking area 12 located in the laser scanning path area and the adsorption area 11, so as to avoid the expansion and deformation of the marking area 12 due to the increase of temperature during the laser scanning process and the radial interference with the adsorption area 11.

[0050] When the silicon wafer adsorption device is working, the silicon wafer is placed on the suction cup by a manipulator, and the vacuum passes through the vent holes on the base 20 and the micropores on the suction cup to adsorb the silicon wafer on the suction cup. After that, the whole machine is pre-aligned. Since the identification ring 122 and the silicon wafer have obvious color difference, it is convenient to identify the edge of the silicon wafer. After the silicon wafer and the suction cup are quickly and accurately aligned, the whole machine is laser annealed. The heat generated during laser annealing will cause the identification ring 122 to expand and deform, and the notch 121 compensates for the expansion and deformation of the identification ring 122 to prevent the identification ring 122 from interfering with the suction cup and the base 20 due to expansion and deformation.

[0051] The present invention also provides a laser annealing device, comprising the above-mentioned silicon wafer adsorption device. The laser annealing device of this embodiment has the beneficial effects of high silicon wafer and suction cup alignment efficiency and high equipment production capacity by applying the above-mentioned silicon wafer adsorption device.

[0052] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0053] The above-mentioned embodiments only express several implementation methods of the present invention, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be subject to the attached claims.

Claims

1. A silicon wafer adsorption device, the silicon wafer adsorption device having an adsorption surface capable of adsorbing a silicon wafer, characterized in that: It also includes a marking difference piece, the marking difference piece is arranged on the silicon wafer adsorption device and is used to form a marking area (12), the adsorption surface includes an adsorption area (11), the adsorption area (11) is configured to be able to adsorb and fix the silicon wafer, the marking area (12) is arranged adjacent to the adsorption area (11), after the silicon wafer is adsorbed and fixed by the adsorption area (11), the edge of the silicon wafer at least partially falls into the marking area (12), and the marking area (12) and the silicon wafer have different machine recognition degrees; The marking area (12) is annular, and at least one notch (121) is radially provided on the annular marking area (12); After the silicon wafer is adsorbed and fixed by the adsorption area (11), at least three edge points of the edge of the silicon wafer fall into the marking area (12).

2. The silicon wafer adsorption device according to claim 1, characterized in that: The different machine recognition degrees include color difference recognition and / or light reflectivity difference recognition; the color of the identification area (12) is different from the color of the silicon wafer; and / or the light reflectivity of the identification area (12) is different from the light reflectivity of the silicon wafer.

3. The silicon wafer adsorption device according to claim 2, characterized in that: The color of the marking area (12) is white, gold, silver or yellow.

4. The silicon wafer adsorption device according to claim 2, characterized in that: The reflectivity of the marking area (12) to light with a wavelength of 400 nm to 800 nm reaches more than 40%.

5. The silicon wafer adsorption device according to claim 2, characterized in that: The marking area (12) is made of at least one of ceramic oxide steel, die steel and zirconium oxide.

6. The silicon wafer adsorption device according to claim 1, characterized in that: The width of the notch (121) is 0.2 mm to 3 mm.

7. The silicon wafer adsorption device according to claim 1, characterized in that: It also comprises a base (20), the annular identification area (12) comprises an identification ring (122), an annular installation area is provided on the base (20), and the identification ring (122) is arranged in the installation area.

8. The silicon wafer adsorption device according to claim 7, characterized in that: The identification ring (122) is fixed in the installation area by gluing or mechanical fixing.

9. The silicon wafer adsorption device according to any one of claims 1 to 5, characterized in that: The upper direction of the silicon wafer is 0°. After the silicon wafer is adsorbed and fixed by the adsorption area (11), the edge of the silicon wafer is located at edge points of 0°, 90°, 180° and 270°; and / or the edge of the silicon wafer is located at edge points of 45°, 135°, 225° and 315° and falls within the marking area (12).

10. The silicon wafer adsorption device according to any one of claims 1 to 5, characterized in that: After the silicon wafer is adsorbed and fixed by the adsorption area (11), the positioning opening of the silicon wafer falls into the marking area (12).

11. The silicon wafer adsorption device according to any one of claims 1 to 5, characterized in that: The surface height of the marking area (12) is the same as the surface height of the adsorption area (11).

12. The silicon wafer adsorption device according to claim 11, characterized in that: The identification area (12) comprises a plurality of identification rings (122) which are arranged in an axially overlapping manner.

13. The silicon wafer adsorption device according to claim 12, characterized in that: The plurality of identification rings (122) are bonded and connected to each other.

14. The silicon wafer adsorption device according to any one of claims 1 to 5, characterized in that: The radial width of the identification area (12) is not unique.

15. A laser annealing device, characterized in that: A silicon wafer adsorption device comprising any one of claims 1 to 14.

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