Inorganic encapsulants for electronic devices with adhesion promoters

Abstract

A package (100) comprises an electronic device (104), an inorganic encapsulant (106) encapsulating at least a portion of the electronic device (104), and an adhesion promoter (150) located between at least a portion of the electronic device (104) and the encapsulant (106).

Description

Technical Field

[0001] Various embodiments are generally directed to a package, a method of making a package, and a method of using the same. Background Art

[0002] Conventional packages may include electronic devices mounted on a chip carrier, such as a lead frame, may be electrically connected via connecting wires extending from the chip to the chip carrier, and may be molded using a molding compound as an encapsulant. Summary of the invention

[0003] It may be desirable to encapsulate devices such as electronic components with high reliability.

[0004] According to an exemplary embodiment, a package is provided, which includes an electronic device, an inorganic encapsulant encapsulating at least a portion of the electronic device, and an adhesion promoter between at least a portion of the electronic device and the encapsulant.

[0005] According to another exemplary embodiment, a method for manufacturing a package is provided, wherein the method includes forming an adhesion promoter on at least a portion of an electronic device, and at least partially encapsulating the electronic device with an inorganic encapsulant with the adhesion promoter interposed therebetween (i.e., between at least a portion of the electronic device and the encapsulant).

[0006] According to another exemplary embodiment, an inorganic encapsulant is used to at least partially encapsulate a device with an adhesion promoter between at least a portion of the device and the encapsulant.

[0007] According to an exemplary embodiment, the use of inorganic encapsulating materials for electronic devices (e.g., semiconductor chips) has proven to be technically very advantageous when an adhesion promoter is placed between the electronic device and the inorganic encapsulant. Such an inorganic encapsulant can provide reliable electrical insulation, can have appropriate thermal properties, and can provide a mechanically reliable surrounding environment for the electronic device. By covering at least a portion of the electronic device to be encapsulated with an adhesion promoter, the mechanical stability of the package can be further improved, and any delamination tendency between the encapsulant and the electronic device can be strongly suppressed or even eliminated.

[0008] Description of Further Exemplary Embodiments

[0009] In the following, further exemplary embodiments of the method and the package will be described.

[0010] In the context of the present application, the term "package" may particularly denote an electronic device comprising one or more electronic devices encapsulated using an encapsulant. Optionally, a carrier for the electronic device and / or one or more conductive contact elements (e.g. connecting wires or clips) may also be implemented in the package.

[0011] In the context of the present application, the term "electronic device" may particularly include semiconductor chips (particularly power semiconductor chips), active electronic devices (such as transistors), passive electronic devices (such as capacitors or inductors or ohmic resistors), sensors (such as microphones, light sensors or gas sensors), actuators (such as speakers) and microelectromechanical systems (MEMS). However, in other embodiments, the encapsulated device may also be of different types, such as electromechanical components, particularly mechanical switches, etc.

[0012] In the context of the present application, the term "adhesion promoter" may particularly denote any material and / or measure that enhances the adhesion between an electronic device and an encapsulant. More specifically, such an adhesion promoter (or coupling agent or binder) may act as an interface between an inorganic encapsulant and a partially or fully encapsulated electronic device or other device to enhance the adhesion between the two materials. Since such an inorganic encapsulant material and the (particularly metallic and / or semiconducting) encapsulated electronic device or other device may be different in their physical and / or chemical properties (e.g. chemical reactivity, surface properties, etc.), it may be difficult to form a direct strong bond between the two materials. However, in a chemical sense, the adhesion promoter may act as a double-ended interface, providing a first connection end to the encapsulant and a second connection end to the encapsulated electronic device or other device to chemically and physically connect these different materials into a strongly bonded structure (see also Figure 2 ). More specifically, the adhesion promoter may act as a di-terminal, tri-terminal or multi-terminal organic molecule, such as an aminosilane that is subjected to pre-polymerization (oligomerization) before it is applied in solution, for example, by a condensation reaction. In order to promote adhesion between one or more electronic devices / devices and the inorganic encapsulant, the mentioned adhesion promoter may significantly promote the mechanical interconnection between the mentioned components, thereby further improving mechanical and electrical reliability.

[0013] In the context of the present application, the term "inorganic encapsulant" may particularly denote a material encapsulating the at least one electronic device / apparatus and comprising or consisting of an inorganic material. The inorganic material may be a compound lacking a CH bond, ie a compound that is not an organic compound.

[0014] The gist of an exemplary embodiment is to use an inorganic ceramic-based encapsulation material for a semiconductor device or other electronic device. As an example of such an inorganic ceramic-based encapsulation material, particular reference is made to the ceramic formulations or materials described in Table 1.

[0015] Advantageously, morphological adhesion promoters can be combined with inorganic encapsulating materials such as concrete, thereby creating highly reliable devices:

[0016] a) In more specific embodiments, self-passivating, only self-passivating metals or highly stable metal oxides involved in hermetic sealing of chips or other electronic devices may be used.

[0017] b) Advantageously, since there are no organic materials that might undergo decomposition, the corresponding package may be high temperature stable at temperatures up to 300° C. or more.

[0018] c) Preferably, a porous morphology adhesion promoter (also referred to as a CTE) that compensates for the mismatch in the coefficient of thermal expansion (CTE) can be implemented. Fig.14 and Fig.15 ). In particular, a low CTE ceramic encapsulant combined with such a morphological adhesion promoter can significantly reduce or even minimize stress in the package.

[0019] d) Advantageously, a strong package bonding interface can be achieved by mechanically interlocking dendrites or the like, so that delamination of the ceramic encapsulation preferably does not occur during the lifetime of the package.

[0020] Also advantageously, the materials described herein can be used, wherein the corresponding adhesion promoter comprises or consists of a roughened or structured surface, or has a porous or dendritic structure. Examples are given in Table 3. The corresponding adhesion layer can also advantageously function as a CTE adaptation layer.

[0021] It is further preferred to use the materials described herein in combination with an additional layer adjacent to the encapsulating material, which additional layer may, for example, comprise or consist of a polymer, a gel, an inorganic layer, an organic layer or a gas (eg, air, nitrogen).

[0022] The use of III / IV semiconductors (e.g., GaN), III / V semiconductors, and / or wide bandgap semiconductors, which may allow for higher junction temperatures Tj and meet the requirements for longer life of the self-driving vehicle's autonomous propulsion device, thereby meeting the need for a package that is reliable at higher temperatures and achieves longer life. Since current packaging solutions are either not suitable for higher temperatures (e.g., epoxy systems may be limited to approximately 200° C.) and / or involve excessive effort, a need for alternative packaging solutions has arisen. Exemplary embodiments provide a solution to this conventional shortcoming.

[0023] In one embodiment, the encapsulant is a ceramic-based encapsulant. In the context of the present application, the term "ceramic" may particularly denote an industrial ceramic. Such an industrial ceramic may have properties according to ENV 12212 (in the latest version at the priority date of the present application). In particular, the ceramic may be a highly developed, high-performance applicable ceramic material, which may be primarily non-metallic and inorganic and may have certain functional properties. In particular, the term "ceramic" within the scope of the present disclosure may cover all listed ceramic types of ENV 12212: C111, C112, C120, C130, C140, C210, C221, C221, C230, C240, C250, C410, C420, C430, C440, C510, C511, C512, C520, C530, C610, C620, C310, C320, C330, C331, C340, C350, C351, C780, C786, C795, C799, RBAO (denoting a term according to DIN ENV 14242), C810, C820, MgO (denoting a term according to DIN ENV 14242), PSZ (denoting a term according to DIN ENV14 242), FSZ (denoting the term according to DIN ENV 14 242), TZP (denoting the term according to DIN ENV 14 242), ATI (denoting the term according to DIN ENV 14 242), PZT (denoting the term according to DIN ENV 14 242), SiO2 (denoting the term according to DIN ENV 14 242), TiO2 (denoting the term according to DIN ENV 14 242). In addition, spinel or mullite materials, both of which represent commonly used engineering terms, can also be covered by the term "ceramic". According to the exemplary embodiment currently described, ceramic-based inorganic materials are used to partially or completely encapsulate one or more electronic devices of the package. It has been proven that ceramic materials have excellent performance in encapsulating chips and other electronic devices. First of all, ceramic materials have reliable electrical insulation and mechanical reliability, thereby providing good mechanical and electrical protection for the encapsulated electronic devices. At the same time, the adhesion between the electronic device and the ceramic encapsulant can be made very stable, especially when an adhesion promoter is sandwiched between the two. Furthermore, the characteristics of the correspondence between the thermal expansion coefficient of the ceramic encapsulant and that of the electronic device can also be quite small, so that even in the presence of strong thermal cycles during long-term use, the thermal stress inside the package can be kept small enough to maintain the integrity of the package.

[0024] In one embodiment, the ceramic-based encapsulant comprises at least one of the group consisting of cement, concrete, gypsum and mortar. The mentioned materials show excellent performance in encapsulating electronic devices and are therefore very suitable for the mentioned uses. In particular, cement-based encapsulants may be very advantageous for this purpose.

[0025] In another embodiment, the encapsulant is an inorganic (i.e., does not contain organic carbon) polymer-based encapsulant, such as a silicon polymer (i.e., an inorganic polymer containing silicon) or an aluminum polymer (i.e., an inorganic polymer containing aluminum). An inorganic polymer may refer to a polymer having a backbone structure that does not include carbon atoms in the main chain.

[0026] In one embodiment, the adhesion promoter of the encapsulation body is a morphological adhesion promoter, i.e., an adhesion promoter with a morphological structure. Accordingly, the manufacturing method may include forming an adhesion promoter, particularly a morphological adhesion promoter, on the electronic device before encapsulation. In the context of the present application, the term "morphological structure" may particularly refer to a structure with a topological and / or porous structure and / or a structure shaped in a manner so as to increase the connection surface of the material connected to the encapsulant and / or the electronic device to promote adhesion. In addition, the morphology of the morphological adhesion promoter may advantageously mechanically interlock between the material of the encapsulant and / or the electronic device and the material of the morphological adhesion promoter. In other words, the morphological structure promotes adhesion due to its shape, rather than simply promoting adhesion due to its chemical properties. However, the morphological structure may also be made of a material synergistically, promoting adhesion in addition to the shape in view of its inherent properties. In particular, the morphological adhesion promoter may be an inorganic porous material. For example, the presence of the morphological structure between the electronic device and the cement-based encapsulant may additionally promote the interconnection between the semiconductor chip and the encapsulant, thereby further improving reliability. Very advantageously, the adhesion promoter may at least partially promote adhesion due to its morphology. Therefore, a specific shaping of the adhesion promoter, in particular an increase in its inner surface, can enhance the adhesion between the chip and the encapsulant caused by the morphological adhesion promoter.

[0027] In one embodiment, the morphological adhesion promoter includes at least one of the group consisting of metal structures, alloy structures, chromium structures, vanadium structures, molybdenum structures, zinc structures, manganese structures, cobalt structures, nickel structures, copper structures, flame deposited structures, roughened metal structures (particularly roughened copper structures or roughened aluminum oxide structures), and any oxides, nitrides, carbides, and selenides of any of the above structures. All structures may include or consist of these metals and / or their alloys. In addition, these structures may include or consist of these metal and alloy oxides thereof. In particular, in different embodiments, single oxides and mixed oxides are possible. Whether the alloy is oxidized may depend on the thermal budget in production. However, other materials and structures may also be used for the morphological adhesion promoter (see also Figures 3 to 13The flame deposited structure mentioned above may include or be composed of silicon oxide, any titanium oxide (such as TiO2, TiO, Ti x O y ) etc. Any organometallic precursor that can be mixed with a combustion gas such as propane or butane to burn and form a specific metal oxide can be used.

[0028] In particular, the morphological adhesion promoter may be formed using atomic layer deposition (ALD: Atomic Layer Deposition), chemical vapor deposition (CVD: Chemical Vapor Deposition), or the like.

[0029] In another embodiment, the adhesion promoter is an organic adhesion promoter, such as silane. Due to its chemical properties, such organic adhesion promoters can promote adhesion.

[0030] In one embodiment, (particularly morphology) adhesion promoter has a plurality of openings. Such openings can have an ordered structure, such as when patterning according to a well-defined mask in the presence of a layer. Such a mask can have a regular array of openings, which is converted into a regular array of openings in the morphological adhesion promoter. However, when the opening of the morphological adhesion promoter has disordered, particularly arbitrary or random features, it is also possible, even preferred. For example, this can be achieved by a non-specific etching process, which produces randomly arranged openings for increasing the surface and promoting interlocking.

[0031] In one embodiment, the opening includes at least one of the group consisting of gaps between holes, dendrites and patterned structures. However, other types of openings can be formed as long as they can increase the surface of the morphological adhesion promoter and promote the mechanical interlocking between the material of the adhesion promoter and the material of the encapsulant. For example, the adhesion promoter layer can include or be composed of a plate of 10nm to 500nm size, such as hexagonal, circular and oriented at multiple angles, so as to form a microscopic porous surface with a pore size in the range of 10nm to 500nm. In addition, the surface of the plate can be covered with a sponge of a porous layer of 10nm to 100nm, and the pore size of the sponge is much lower in the range of 1nm to 100nm.

[0032] In one embodiment, the material of the adhesion promoter is suitable for at least partially compensating for the mismatch of the coefficient of thermal expansion (CTE) between the material of the electronic device and the material of the encapsulant. Highly advantageously, the adhesion promoter is not only used to enhance the adhesion between the electronic device and the inorganic encapsulant by promoting mechanical interlocking, but also can provide a smooth transition of the CTE value between the electronic device (particularly its pad) and the inorganic encapsulant at the same time. In the absence of an adhesion promoter, in view of the different materials (ceramics, metals, semiconductors) of the encapsulant and the electronic device, a sudden jump in the CTE value may occur at the interface between the electronic device (particularly a semiconductor chip with a metal pad) and the inorganic (particularly ceramic) encapsulant. However, when the morphology and / or material of the adhesion promoter is configured to provide a CTE gradient between the CTE value of the inorganic encapsulant and the material of the electronic device, a smooth transition can be achieved and the formation of mechanical stress inside the package can be suppressed in the case of rapid temperature changes. In particular, the morphology of the adhesion promoter may contribute to a smooth or even continuous transition of the CTE value. For example, when the cross-sectional area of ​​the opening in the adhesion promoter decreases from the encapsulant toward the electronic device, the amount of encapsulant material inside such opening can be spatially gradually reduced from the pure encapsulant toward the surface of the electronic device. Therefore, the morphology of the adhesion promoter can also contribute to a smooth transition of the CTE value, thereby further increasing the mechanical reliability of the package.

[0033] In one embodiment, the adhesion promoter forms an interlayer in the interface region between the encapsulant and the electronic device. In particular, the porous interlayer can provide a (particularly continuous) transition of porosity between the encapsulant and the electronic device. In the context of the present application, the term "porosity" can represent the ratio between the pore volume and the total volume (i.e., the sum of the pore volume and the solid material volume) of a porous body such as a morphological interlayer. Therefore, a separate layer with a spatially varying porosity can be inserted between the electronic device and the encapsulant, and the separate layer can be used as an adhesion promoter with a gradually varying physical property. The material of this interlayer can be selected to further improve adhesion, reduce CTE mismatch, etc. For this reason, for example, the pores of the interlayer can be at least partially filled with the material of the encapsulant. Combined with the spatially varying porosity of the interlayer, this may achieve a gradual CTE transition.

[0034] Preferably, the interlayer has a thickness in the range between 30 nm and 500 nm, in particular in the range between 50 nm and 200 nm. For example, the thickness of the interlayer may be about 100 nm. Over the thickness of the adhesion promoter interlayer, the porosity (i.e., the ratio between the pore volume and the sum of the pore volume and the solid volume) may, for example, decrease from 90% (near the interface of the encapsulant) to 10% (near the interface of the electronic device).

[0035] In one embodiment, the interlayer comprises at least one of the group consisting of a polymer, a gel, an inorganic layer, an organic layer and at least one gas, in particular air or nitrogen. However, other materials may also be used.

[0036] In one embodiment, the (particularly ceramic-based) inorganic encapsulant has an inherent non-flammable property. Therefore, in view of this inherent non-flammable property of the inorganic encapsulant, the encapsulant may not contain a non-flammable additive. Advantageously, the ceramic material of the encapsulant itself may have a non-flammable property, thereby eliminating the need to add an additive having a non-flammable property to the encapsulant. In this way, the composition of the encapsulant can be simplified, so that the encapsulation of the one or more electronic devices can be completed with less effort.

[0037] In one embodiment, the method includes forming an encapsulant by providing a mixture of filler particles in a solution and the solution as a precursor for forming a final solid encapsulant. In the context of the present application, the term "solution" can particularly represent a liquid or flowable medium and / or a slurry. In the context of the present application, the term "filler particles" can particularly represent (particularly powder or particle type) materials that fill the internal volume in a matrix. By selecting fillers, the physical and / or chemical properties of the encapsulant can be adjusted. Such properties can include thermal expansion coefficient, thermal conductivity, dielectric properties, etc. The mixture of solution and filler particles can be converted into an encapsulant composed of (ceramic or non-ceramic) filler particles in a ceramic material matrix and the solid matrix after solidification. The matrix can provide a solid component of the encapsulant, and mechanical integrity can be ensured. Filler particles can be optionally added to fine-tune the physical, chemical, etc. properties of the encapsulant. For example, filler particles can increase the thermal conductivity of the encapsulant so that heat can be efficiently removed from the inside of the package (this heat can be generated by electronic devices, such as when embodied as a power semiconductor chip). The filler particles may also provide improved dielectric decoupling between the electronic device and the surrounding environment of the enclosure.

[0038] In one embodiment, the method comprises providing the solution with a non-aqueous solvent, in particular an alcohol. Thus, the liquid phase may be different from the aqueous solvent in order to make it possible to control the reaction kinetics. However, alternatively, the liquid phase may also comprise or consist of water.

[0039] In one embodiment, the method includes contacting a morphological adhesion promoter with a solution of one of the precursors of the encapsulant so that the solution penetrates into the opening of the morphological adhesion promoter. Through such a manufacturing process, the liquid precursor material of the encapsulant is likely to be efficiently embedded in the opening of the morphological adhesion promoter on the one or more electronic devices. After the precursor material of the encapsulant is solidified and solidified, the opening can remain permanently filled with the encapsulant material. Therefore, the smooth transition of the CTE value and / or other physical and / or chemical properties between the inorganic (particularly ceramic) encapsulant and the electronic device (particularly the semiconductor chip with a metal pad) can be achieved. After solidification, the liquid precursor solidifies and is permanently maintained in the opening to establish a smooth transition of properties between the chip and the encapsulant.

[0040] In one embodiment, the encapsulating agent further comprises at least one additive. In particular, such at least one additive may have a maximum weight percentage of less than 5 wt %, in particular less than 1 wt %, based on the gross weight of the encapsulating agent. By adding one or more additives, the specific properties of the encapsulating agent may be adjusted according to the desired application.

[0041] In one embodiment, the at least one additive is selected from the group consisting of a pigment, a stress modifier, an ion trap and a release agent. The addition of a pigment can allow the color of the encapsulant to be adjusted. For example, the encapsulant can be made opaque to avoid any undesirable interaction between light and the electronic device encapsulated in the encapsulant. By adding a stress modifier, thermal stresses inside the package in the form of an encapsulated electronic device can be adjusted. The ion trap can capture charged particles inside the package or the package to ensure proper electrical insulation of the encapsulant. The provision of a release agent can facilitate the simple release of the cured encapsulant from the encapsulation tool.

[0042] In one embodiment, filler particles are selected from the group consisting of crystalline silica, fused silica, spherical silica, titanium oxide, aluminum hydroxide, magnesium hydroxide, zirconium dioxide, calcium carbonate, calcium silicate, talc, clay, carbon fiber, glass fiber and mixtures thereof. However, other filler materials are also possible according to the requirements of specific applications. For example, filler particles (such as SiO2, Al2O3, Si3N4, BN, AlN, diamond, etc.) for improving thermal conductivity can be embedded in the encapsulant. However, in addition to the mentioned filler particles or alternatively, other filler particles can also be implemented in the encapsulant. In particular, organic particles can be used as fillers (for example, fillers can also include or be composed of polymers or polymer mixtures, such as epoxy resins, polyethylene, polypropylene, etc.). In addition, it should also be mentioned that fillers can be processed in a manner to improve the adhesion between fillers and the encapsulant comprising the filler. The filler coating can be composed of a group including silane, mercaptan or a porous structure. In addition, porous fillers can also be used. In particular, filler particles can be provided as nanoparticles or microparticles. The filler particles may have the same size or may have a certain particle size distribution. Such a particle size distribution may be preferred because it may allow improved filling of the gap inside the encapsulant. For example, the size of the filler particles may be in the range between 1nm and 200 μm, particularly in the range between 10nm and 20 μm, more particularly in the range between 2 μm and 5 μm. For example, the shape of the filler particles may be random, spherical, rectangular, lamellar and film-like. The filler particles may be modified, coated and / or processed to improve adhesion and / or chemical bonding with the surrounding matrix. An example is silane. The coating may also change the surface energy of the filler, thereby improving and realizing the wetting of the solution / matrix.

[0043] In one embodiment, the package includes a carrier on which the electronic device is mounted. For example, such a carrier may be a lead frame (e.g., made of copper), a DAB (Direct Aluminum Bonding), a DCB (Direct Copper Bonding) substrate, etc. In addition, at least a portion of the carrier may be encapsulated with the electronic device by an encapsulant. The carrier may have a metal surface that is susceptible to corrosion. However, when an inorganic encapsulant is used in combination with an adhesion promoter, the carrier may be encapsulated in the encapsulant without the risk of corrosion.

[0044] Preferably, the carrier may also be at least partially covered by the adhesion promoter described herein before being at least partially encapsulated by the encapsulant described herein. This may further improve the mechanical reliability of the package. In other words, all embodiments regarding the adhesion promoter and all embodiments regarding the encapsulant and described in detail for the electronic device also apply to the carrier.

[0045] In one embodiment, the package includes a conductive contact element that electrically couples the electronic device to the carrier. For example, the conductive contact element may include a clip, a connecting wire and / or a connecting strip. The clip may be a three-dimensionally curved plate-type connecting element having two flat portions to be connected to the upper main surface of the corresponding electronic device and the upper main surface of the chip carrier, wherein the two flat portions are connected to each other by an inclined connecting portion. As an alternative to such a clip, a connecting wire or a connecting strip may be used, which is a flexible conductive wire or a strip-shaped body, one end portion of which is connected to the upper main surface of the corresponding chip, and the other opposite end portion is electrically connected to the chip carrier.

[0046] Preferably, the carrier may also be at least partially covered by the adhesion promoter described herein before being at least partially encapsulated by the encapsulant described herein. This may further improve the mechanical reliability of the package. In other words, all embodiments regarding the adhesion promoter and all embodiments regarding the encapsulant and described in detail for the electronic device also apply to the carrier.

[0047] In one embodiment, the method includes pre-treating at least a portion of the electronic device, carrier and / or conductive contact element to improve the adhesion between the encapsulant and at least a portion of the electronic device, carrier and / or conductive contact element. Therefore, the adhesion between the above-mentioned encapsulant and the electronic component can be improved by applying additional device-level treatments that promote adhesion. Very advantageously, the package or a portion thereof (e.g., its metal surface) can be pre-treated to improve its adhesion properties to the above-mentioned encapsulant. For example, before being encapsulated by the encapsulant, the surface of the package or a portion thereof can be roughened. Such roughening can be performed mechanically (e.g., by grinding), chemically, by laser treatment, etc. The surface of the package or a portion thereof to be encapsulated by the encapsulant can also be surface activated. This surface activation can be achieved, for example, by plasma treatment of the corresponding surface, particularly the corresponding metal surface.

[0048] In one embodiment, the package is configured as one of the group consisting of a power module connected by a lead frame, a transistor outline (TO: Transistor Outline) package, a quad flat no-lead package (QFN: Quad Flat No Leads Package), a small outline (SO: Small Outline) package, a small outline transistor (SOT: Small Outline Transistor) package and a thin small outline package (TSOP: Thin Small Outline Package). Packages for sensors and / or electromechanical devices are also possible embodiments. In addition, exemplary embodiments may also relate to packages used as nano batteries or nano fuel cells or other devices with chemical, mechanical, optical and / or magnetic actuators. Therefore, the package according to an exemplary embodiment is fully compatible with the standard package concept (especially fully compatible with the standard TO package concept), and is presented as a conventional electronic device in appearance, which is highly convenient for users.

[0049] In one embodiment, the package is configured as a power module, such as a molded power module. For example, an exemplary embodiment of the package may be an intelligent power module (IPM). Another exemplary embodiment of the package is a dual inline package (DIP).

[0050] In one embodiment, the electronic device is configured as a power semiconductor chip. Therefore, the electronic device (e.g., a semiconductor chip) can be used for power device applications in, for example, the automotive field, and can, for example, have at least one integrated insulated-gate bipolar transistor (IGBT: Insulated-Gate Bipolar Transistor) and / or at least one other type of transistor (e.g., MOSFET, JFET, etc.) and / or at least one integrated diode. Such integrated circuit elements can be made, for example, using silicon technology or based on wide-bandgap semiconductors (e.g., silicon carbide). The semiconductor power chip can include one or more field effect transistors, diodes, inverter circuits, half-bridges, full-bridges, drivers, logic circuits, other devices, and the like.

[0051] In one embodiment, the electronic device is subjected to vertical current flow. The package configuration according to the exemplary embodiment is particularly suitable for high power applications requiring vertical current flow, i.e., current flow in a direction perpendicular to two opposing main surfaces of the electronic device, one of which is used to mount the electronic device on the carrier.

[0052] A semiconductor substrate, in particular a silicon substrate, may be used as a substrate or wafer forming the basis of the electronic device. Alternatively, a silicon oxide or another insulator substrate may be provided. A germanium substrate or a III-V semiconductor material may also be implemented. For example, exemplary embodiments may be implemented in GaN or SiC technology.

[0053] In addition, exemplary embodiments may utilize standard semiconductor processing techniques such as appropriate etching techniques (including isotropic and anisotropic etching techniques, in particular plasma etching, dry etching, wet etching), patterning techniques (which may involve photolithography masks), deposition techniques (e.g. chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD: Plasma Enhanced Chemical Vapor Deposition), atomic layer deposition (ALD), sputtering, etc.).

[0054] The above and other objects, features and advantages will become apparent from the following description and appended claims taken in conjunction with the accompanying drawings in which like parts or elements are designated by like reference numerals. BRIEF DESCRIPTION OF THE DRAWINGS

[0055] The accompanying drawings, which are included to provide a further understanding of exemplary embodiments and constitute a part of this specification, illustrate exemplary embodiments.

[0056] In the attached picture:

[0057] Figure 1 A cross-sectional view of a package to be mounted on a mounting structure is shown according to an exemplary embodiment.

[0058] Figure 2 An interface region with a morphological adhesion promoter between an electronic device and an inorganic ceramic-based encapsulant according to an exemplary embodiment is schematically illustrated.

[0059] Figure 3 is a top view of a morphological adhesion promoter comprising manganate according to an exemplary embodiment.

[0060] Figure 4 is a top view of a morphological adhesion promoter comprising a zinc-chromium alloy according to an exemplary embodiment.

[0061] Figure 5 is based on Figure 4 Cross-sectional view of the morphology of the adhesion promoter.

[0062] Figure 6 is a top view of a morphological adhesion promoter comprising a zinc-vanadium alloy and an oxide according to an exemplary embodiment.

[0063] Figure 7 is based on Figure 6 Cross-sectional view of the morphology of the adhesion promoter.

[0064] Figure 8 is a top view of a morphological adhesion promoter including a zinc-molybdenum alloy and an oxide according to an exemplary embodiment.

[0065] Fig. 9 is a top view of a morphological adhesion promoter including zinc vanadium according to an exemplary embodiment.

[0066] Fig.10 is based on Fig. 9 Cross-sectional view of the morphology of the adhesion promoter.

[0067] Fig.11 Shows Fig.10 Detail of a cross-sectional view.

[0068] Fig.12 Shows Fig.11 Detail of a cross-sectional view.

[0069] Fig.13 Shown according to Figures 9 to 12 Further details of the morphology of the adhesion promoter, showing the zinc vanadium seed layer as the starting layer for the final porous adhesion promoter layer.

[0070] Fig.14 A model of a porous morphology adhesion promoter according to an exemplary embodiment is shown.

[0071] Fig.15 It is shown along the basis Fig.14 Plot of the stress average in the perpendicular direction of the porous morphology adhesion promoter.

[0072] Fig.16 is a graph showing the stress average along the vertical direction in the absence of a porous morphology adhesion promoter, for comparison with Fig.15 Make a comparison. DETAILED DESCRIPTION

[0073] The illustrations in the drawings are schematic and not drawn to scale.

[0074] Before exemplary embodiments will be described in greater detail with reference to the accompanying drawings, some general considerations based on which exemplary embodiments have been developed will be summarized.

[0075] According to an exemplary embodiment, an encapsulant is provided which comprises or consists of an inorganic material, in particular a ceramic, such as concrete, in combination with an adhesion promoter, preferably a morphological adhesion promoter.

[0076] Existing epoxy-based molding compounds have very high coefficients of thermal expansion (CTE) and limited yield strength. In addition, these thermoset materials may tend to crack along interfaces and within the bulk. Furthermore, delamination may occur at the interface in this conventional approach.

[0077] Furthermore, in addition to mechanical and thermodynamic limitations, existing polymer-based encapsulations may have limitations in terms of thermal degradation and may already begin to degrade at very low temperatures of 200° C. However, certain semiconductor materials (such as GaN, SiC or modern MOSFETs) may require the corresponding package to have significantly higher temperature stability of up to 300° C., which cannot be achieved with traditional encapsulation materials, such as epoxy-based polymer encapsulants.

[0078] Conventional epoxy molding compounds may have high filler content of inorganic fillers (e.g., SiO2) to reduce the CTE value of the bulk material. Various adhesion promoter molecules may be added to increase the adhesion of the molding compound to semiconductor chips, lead frames, and other interfaces. In addition to adhesion promoters, these molding compounds may also include various different chemicals, such as flame retardants. However, the reactions that may occur between the different components at higher temperatures may result in additional chemicals that may be dangerous to the package.

[0079] The limitations of conventional encapsulants based on hydrocarbon-based encapsulating materials (epoxy resins, etc.) include their limited yield strength, high CTE, and low temperature resistance, as such materials may decompose quickly at higher temperatures.

[0080] In order to overcome at least part of the above and / or other disadvantages, an exemplary embodiment uses an inorganic encapsulant, in particular a ceramic encapsulant. The use of ceramic-based inorganic materials (such as concrete) can provide significantly lower CTE at higher yield strengths. Since the concrete material can be a non-flammable non-polymer, additives such as flame retardants can be omitted, thereby reducing the complexity of the encapsulant. In addition, concrete provides significantly wider stability when the temperature exceeds the higher temperature of 300°C. Conventional molding compounds have shown stability weaknesses at 200°C. Detailed information on the ceramic formulation of the encapsulant used according to an exemplary embodiment and its curing mechanism is shown in Table 1.

[0081]

[0082]

[0083]

[0084] Table 1: Overview of ceramic formulations and inorganic polymer formulations and their different phases of interaction with any adhesion promoter described in Table 3 ((*1): Solvents: In addition to water, alcohols and / or other solvents may also be used)

[0085] Table 2 shows different types of cements that may be used as a ceramic-based encapsulant for a package according to an exemplary embodiment.

[0086]

[0087] Table 2: Examples of cement components for concrete formulations

[0088] According to an exemplary embodiment, using a morphological adhesion promoter as a base for a ceramic encapsulation material may allow for efficient improvement of intra-package adhesion within the package.

[0089] In an embodiment, the ceramic-based material may be manufactured and processed as a mixture of solution and particles to encapsulate electronic devices.To ensure a suitable interaction between the encapsulation material and the morphological adhesion promoter, the morphological adhesion promoter may preferably be applied prior to applying the encapsulation material.

[0090] When a liquid encapsulating material is in contact with a morphological adhesion promoter, the liquid portion of the mixture may be able to penetrate into the pores of the adhesion promoter layer during application on the electronic device. Possible morphological adhesion promoters that can be used according to an exemplary embodiment are shown in Table 3. For all these morphological adhesion promoters, a given pore size and layer thickness can be adapted to the respective encapsulating material by adjusting the deposition process parameters accordingly.

[0091] Referring again to Table 3, chromium, vanadium and molybdenum-based adhesion promoters can be formed by electrodeposition of corresponding inorganic materials. Therefore, the three adhesion promoters mentioned are all inorganic morphological adhesion promoters with sponge-like pore structures. The flame-deposited adhesion promoter can be, for example, a porous silicon oxide layer deposited from the vapor phase using a flame, and is also a morphological adhesion promoter. Rough copper can be produced by a corresponding copper etching process of a copper layer, which produces pores on the surface of the etched copper layer, thereby producing this morphological copper-based adhesion promoter. In a similar manner, aluminum oxide can be roughened. This aluminum oxide material can be formed by thermal oxidation of aluminum or ALD (atomic layer deposition). Regarding the wet chemical etching process for the ALD layer, it should be mentioned that this is only an exemplary way to make the layer porous. For example, water vapor may be sufficient to obtain a porous layer. In addition, aluminum oxide can be formed into a porous layer using a specific gas component of aluminum organic matter in a chamber. In addition, silicon nitride can also be deposited into a porous layer at a specific ratio between TEOS (tetraethylsilane) and ammonia (NH3) and under specific deposition conditions of relevant concentrations and temperatures. By means of a subsequent wet etching process, the produced aluminum oxide can be made porous, wherein the pores can, for example, have a substantially columnar and / or substantially spherical shape.

[0092] As an alternative to the inorganic adhesion promoters mentioned, it is also possible to use organic adhesion promoters, such as silanes.

[0093] The liquid precursor or liquid portion of the encapsulating material may crystallize in the pores of the sponge layer or morphological adhesion promoter by forming a solid phase, such as for the consolidation formation of crystalline hydrates.

[0094] During this solidification of the liquid phase in the porous morphological adhesion promoter sponge, the morphological adhesion promoter and the encapsulating material can form a mixture of a fiber / encapsulant sandwich. In addition to strong adhesion, the sandwich can also enable the electronic device, carrier or substrate to achieve CTE adaptation with the encapsulating material. The ratio between the volume fraction of the adhesion promoter and the volume fraction of the encapsulating material can be continuously changed in the formed sandwich. The average CTE of the nanostructured layer can be continuously changed from CTE (electronic device, carrier or substrate) to CTE (encapsulating material) according to the pore size and porosity. Therefore, the formed sandwich (which can be composed of the material of the morphological adhesion promoter with spatial variation in percentage and the material of the encapsulating agent) can form a layer with a CTE value continuously changing from the electronic device or device substrate to the encapsulating material. The CTE mismatch between the electronic device or device substrate and the encapsulating material that may generate stress (especially thermodynamic stress) may be partially or even completely compensated. Together with the favorable low CTE characteristics of the ceramic encapsulating material, this can reduce or even minimize the stress in the package.

[0095] In addition to promoting adhesion and reducing stress, morphological adhesion promoters can also act as a corrosion barrier. Especially in conjunction with a ceramic encapsulant, the resulting interlayer can act as a shield against water and oxygen.

[0096] In particular, adhesion to the device surface can also be achieved via a seed layer of the actual adhesion promoter layer as metallurgical contact when using adhesion promoters in the form of Cr, V or Mo. Such a seed layer can also function as a corrosion barrier.

[0097] Table 3 shows an overview of morphological adhesion promoters that may be used according to an exemplary embodiment:

[0098]

[0099]

[0100] Table 3: Overview of morphological adhesion promoters that can interact with liquid encapsulation materials (other materials are possible in other embodiments, in particular: metal structures, alloy structures, chromium structures, vanadium structures, molybdenum structures, zinc structures, manganese structures, cobalt structures, nickel structures, copper structures, flame deposited structures, roughened metal structures, in particular roughened copper structures or roughened aluminum oxide structures and any oxides, nitrides, carbides and selenides of said structures)

[0101] (*1): Precursors: tetraethylsilane, hexamethyldisiloxane, hexamethyldisiloxane, titanium organic group

[0102] (*2): Example, using H2SO4 / H2O2 to roughen copper and using benzotriazole additives to enhance etching selectivity to grain boundaries

[0103] Figure 1 A cross-sectional view of a package 100 implemented as a transistor outline (TO) package is shown according to an exemplary embodiment. The package 100 is mounted on a mounting structure 132, implemented here as a printed circuit board, to create the arrangement 130.

[0104] The mounting structure 132 includes electrical contacts 134 implemented as plated portions in through holes of the mounting structure 132. When the package 100 is mounted on the mounting structure 132, the electronic device 104 of the package 100 is electrically connected to the electrical contacts 134 via the conductive base 102 of the package 100, here implemented as a lead frame made of copper.

[0105] Thus, the package 100 comprises an electrically conductive carrier 102, an electronic device 104 (which is implemented here as a power semiconductor chip) adhesively (see reference numeral 136) mounted on the carrier 102, and an encapsulant 106 encapsulating a portion of the carrier 102 and a portion of the electronic device 104. Figure 1 It can be seen that pads on the upper main surface of the electronic device 104 are electrically coupled to the carrier 102 via connecting wires as electrically conductive contact elements 110 .

[0106] During operation of the power package or package 100, the power semiconductor chip in the form of the electronic device 104 generates considerable heat. At the same time, it should be ensured that any undesired current flow between the bottom surface of the package 100 and the environment is reliably avoided.

[0107] In order to ensure electrical insulation of the electronic device 104 and to remove heat from the interior of the electronic device 104 to the environment, an electrically insulating and thermally conductive interface structure 108 may be provided, which covers the exposed surface portion of the carrier 102 and the connecting surface portion of the encapsulant 106 at the bottom of the package 100. The electrically insulating properties of the interface structure 108 prevent undesired current flow even in the presence of high voltages between the interior and the exterior of the package 100. The thermally conductive properties of the interface structure 108 facilitate the removal of heat from the electronic device 104 via the electrically conductive carrier 102 (of suitably thermally conductive copper), through the interface structure 108 and towards the heat sink 112. The heat sink 112, which may be made of a highly thermally conductive material such as copper or aluminum, has a base 114 directly connected to the interface structure 108 and has a plurality of cooling fins 116 extending parallel to each other from the base 114 to remove heat to the environment.

[0108] Although Figure 1 A very specific packaging configuration is shown, but the use of encapsulant 106, which will be described in further detail below, is also advantageous for package 100 and the like in any other packaging configuration.

[0109] As will be referenced below Figure 2 As described, the encapsulant 106 may be a ceramic-based inorganic encapsulant material, such as cement. In addition, a morphological adhesion promoter 150 may be disposed between the electronic device 104 and the ceramic encapsulant 106, which will also be referred to below. Figure 2 Give a description.

[0110] like Figure 1 At least a portion of the carrier 102 (particularly a portion of the carrier 102 in contact with the encapsulant 106) may also be covered by an adhesion promoter such as the adhesion promoter 150 covering at least a portion of the electronic device 104, as schematically indicated by reference numeral 150' in FIG. Figure 1As schematically indicated by the reference numeral 150” in the figure, at least a portion of the conductive contact element 110 may also be covered by an adhesion promoter such as the adhesion promoter 150 covering at least a portion of the electronic device 104. By taking such measures, the stability of the package 100 may be further improved, and the tendency of delamination within the package 100 may be further suppressed.

[0111] Figure 2 Schematically illustrates an example of an electronic device 104 (eg, Figure 2 The illustrated portion of the electronic device 104 in FIG. 1 may be an interface region between a pad (such as an aluminum or copper pad) on a semiconductor body and an inorganic ceramic based encapsulant 106 having a morphological adhesion promoter 150 .

[0112] As already mentioned above, the encapsulant 106 may comprise cement, concrete or alternatively plaster or mortar. Such a ceramic-based inorganic encapsulant 106 may have inherent non-flammable properties, so the addition of non-flammable additives may be omitted. This makes the manufacture of the encapsulant 106 simple. In particular, the combination of the morphological adhesion promoter 150 and the ceramic encapsulant 106 may be very advantageous. This ensures proper adhesion, keeps thermodynamic stresses low, enables efficient heat removal, prevents corrosion, and ensures thermal stability at very high temperatures.

[0113] For example, the schematically shown morphological adhesion promoter 150 may be a roughened copper structure or a porous Zn / Cr layer having pores into which the material of the encapsulant 106 (which may be at least partially liquid or flowable during fabrication) may penetrate. Roughening of the copper material may be achieved, for example, by plasma treatment, by wet etching and / or by mechanical treatment.

[0114] like Figure 2 As shown, the adhesion promoter 150 has a plurality of openings 160 in the form of holes having different diameters. The material of the adhesion promoter 150 may be selected to partially or fully compensate for the mismatch in thermal expansion coefficients between the material of the electronic device 104 and the material of the encapsulant 106 .

[0115] The adhesion-promoting interlayer 152 forms an interface between the encapsulant 106 and the adhesion promoter 150. For example, the vertical thickness d of the interlayer 152 can be 100 nm. The interlayer 152 constitutes a continuous transition between the material of the encapsulant 106 and the material of the adhesion promoter 150, as will be described in further detail below: Figure 2In the structure shown, the encapsulant 106 can be formed on and in the adhesion promoter 150 by providing a mixture of a solution and particles in the solution as a precursor of the encapsulant 106. During the manufacture of the encapsulant 106, the solution can flow within the hole-shaped openings 160 of the morphological adhesion promoter 150. Then, the liquid phase or flowable matrix can be solidified or solidified (for example, by hydration or polymerization) so that it can be permanently maintained in the solid phase within the pores of the morphological adhesion promoter 150. This can obtain an encapsulant 106 comprising a solid matrix 182 (formed according to the previous liquid precursor) and filler particles 184 embedded in the matrix 182. When the adhesion promoter 150 has been formed on the electronic device 104 before encapsulation, it is possible to contact the morphological adhesion promoter 150 with a solution that is one of the precursors of the encapsulant 106 so that the solution penetrates into the openings 160 in the morphological adhesion promoter 150.

[0116] exist Figure 2 In the case of the structure shown, appropriate adhesion promotion, reliable stress suppression and a strong corrosion barrier can be provided simultaneously.

[0117] Still reference Figure 2 , a morphological adhesion promoter 150 defining an interlayer 152 is arranged to increase adhesion between the encapsulant 106 and the electronic device 104, reduce or smooth the CTE mismatch between the encapsulant 106 and the chip 102, and inhibit undesirable corrosion. To this end, the morphological adhesion promoter 150 includes an opening 160 having a diameter that gradually decreases from the area of ​​the package 100 that is purely composed of the encapsulant material to the electronic device 104. Therefore, a liquid precursor for making the ceramic-based encapsulant 106 can flow into the opening 160 during the manufacturing process and can help the coefficient of thermal expansion (CTE) along Figure 2190 in the vertical or z-axis direction. At the vertical horizontal layer 192, the CTE value is limited only by the material of the encapsulant 106. At the horizontal layer 194, the CTE value is limited only by the material of the electronic device 104 (particularly the aluminum of the pad or the silicon material of the semiconductor body). However, from the vertical horizontal layer 198 to another vertical horizontal layer 196, the amount of material provided by the encapsulant 106 decreases continuously, while the amount of material of the adhesion promoter 150 increases continuously. At the vertical horizontal layer 198, the CTE value is dominated by the material of the encapsulant 106, while at the vertical horizontal layer 196, the CTE value is dominated by the material of the adhesion promoter 150. For example, the porosity (i.e., the ratio between the pore volume and the sum of the pore volume and the volume of the solid adhesion promoter material) of the interlayer 152 can be 10% at the horizontal layer 196, while the porosity can be 90% at the horizontal layer 198. In particular, by adjusting the morphology of the morphological adhesion promoter, the variation and adjustment of the porosity of the morphological adhesion promoter allows for a smooth CTE transition, as compared to the thermodynamically unfavorable jump function of the CTE at the abrupt interface between the encapsulant 106 and the electronic device 104. In this way, the CTE mismatch changes smoothly along the direction 190, which reduces the thermal load inside the package 100. In addition, the morphology of the morphological adhesion promoter 150 promotes the mechanical interlocking between the encapsulant material and the adhesion promoter material and increases the inner surface, thereby enhancing the adhesion between the material of the encapsulant 106 and the material of the electronic device 104. By appropriately selecting the material of the adhesion promoter 150 and the material of the encapsulant 106, the corrosion tendency of the package 100 during use in a humid environment can also be strongly suppressed. Therefore, a highly reliable package 100 can be obtained by an exemplary embodiment.

[0118] The cement of the ceramic-based encapsulant 106 can reduce thermomechanical stress due to its highly favorable CTE properties. In addition, the cement material with its crystalline structure can enhance the mechanical stability of the package 100. Even more importantly, the thermal stability of the cement increases the manufacturing and operating temperature of the package 100 compared to traditional methods. In addition, the cement material has excellent thermal conductivity compared to other encapsulant materials.

[0119] In particular, in combination with the morphological adhesion promoter 150 , the package 100 may achieve improved adhesion, reduced delamination tendency, and increased tensile strength.

[0120] The skilled person will understand that Figure 2 The illustration of the pore structure in is only schematic and is used for illustrative purposes. The geometrical properties of this pore structure can vary greatly depending on the materials used and the processes used.

[0121] In the following, different embodiments of deposited layer porosity are compared:

[0122] Figure 3 is a top view of a morphological adhesion promoter 150 including manganite according to an exemplary embodiment. A flat structure is obtained without pores.

[0123] Figure 4 is a top view of a morphological adhesion promoter 150 including zinc-chromium alloy and oxide on NiP according to an exemplary embodiment. Figure 5 is based on Figure 4 Cross-sectional view of the morphology of the adhesion promoter 150. The illustrated embodiment corresponds to a porous structure on NiP. A sponge-like structure with features having a characteristic size greater than 30 nm is obtained.

[0124] Figure 6 is a top view of a morphological adhesion promoter 150 comprising a zinc-vanadium alloy and an oxide according to an exemplary embodiment. The illustrated embodiment corresponds to ZnV on NiP. Figure 7 is based on Figure 6 A cross-sectional view of the morphology of the adhesion promoter 150. A structure with a porous plate having features with feature sizes in the range of 5 nm to 50 nm was obtained.

[0125] Figure 8 is a top view of a morphological adhesion promoter 150 comprising a zinc-molybdenum alloy and an oxide according to an exemplary embodiment. The illustrated embodiment corresponds to ZnMo on NiP. A crystalline structure with features having a characteristic size much smaller than 30 nm is obtained.

[0126] Fig. 9 is a top view of a morphological adhesion promoter 150 including zinc vanadium (Zn—V) on NiP according to an exemplary embodiment. Fig.10 is based on Fig. 9 A cross-sectional view of the morphology of the adhesion promoter 150. Fig.11 Shows Fig.10 Detail of a cross-sectional view. Fig.12 Shows Fig.11 Detail of a cross-sectional view. Fig.13 Shown according to Figures 9 to 12 Further details of the morphological adhesion promoter 150. The thickness of the morphological adhesion promoter 150 is about 200 nm. Zn dendrites or crystallites with typical sizes in the range of 10 nm to 20 nm are obtained. The typical size of the porous shell of the vanadium oxide with traces of zinc can be in the range of between 10 nm and 20 nm. The shell pore size can be less than 10 nm. The seed layer of the vanadium oxide with traces of zinc can have a size of 20 nm.

[0127] Fig.14 A model of a porous morphology adhesion promoter 150 is shown according to an exemplary embodiment. Fig.15It is shown along the basis Fig.14 A graph of the stress average value (vertical axis of the graph) in the vertical direction (horizontal axis of the graph) of the porous adhesion promoter 150. Fig.16 is a graph showing the stress average along the vertical direction in the absence of a porous morphology adhesion promoter, for comparison with Fig.15 Therefore, Fig.15 The use of porous adhesion promoters to minimize stresses is shown. Fig.16 is a reference where stress is not minimized without the porous adhesion promoter. Fig.14 and Fig.15 It is demonstrated that compensation for CTE (coefficient of thermal expansion) mismatch and reduction of stress are achieved by exemplary embodiments.

[0128] The simulated morphology of the adhesion promoter 150 shows that Fig.15 The configuration can result in stress reduction and adaptation of the thermal expansion coefficient. More specifically, the simulation shown shows that the porous morphology adhesion promoter 150 acts as a stress reducer at the interface between the mold compound and the electronic device. For example, the stress can be reduced from 0.3 GPa to about 0.1 GPa, that is, a three-fold stress reduction can be achieved at the interface between copper and the mold compound.

[0129] It should be noted that the term "comprising" does not exclude other elements or features, and the singular form "a" does not exclude a plurality. In addition, elements described in conjunction with different embodiments may also be combined. It should also be noted that the reference numerals should not be interpreted as limiting the scope of the claims. In addition, the scope of the present application is not intended to be limited to the specific embodiments of the processes, machines, manufactures, material compositions, means, methods and steps described in the specification. Therefore, the appended claims are intended to include such processes, machines, manufactures, material compositions, means, methods or steps within their scope.

Claims

1. A package (100), comprising: Electronic devices (104); an inorganic encapsulant (106) encapsulating at least a portion of the electronic device (104); and an adhesion promoter (150) positioned between at least a portion of the electronic device (104) and the encapsulant (106) to enhance adhesion, Wherein, the adhesion promoter is a morphological adhesion promoter, and the morphological adhesion promoter includes a morphological structure having a plurality of openings.

2. The package (100) according to claim 1, wherein: The encapsulant (106) is a ceramic-based encapsulant or an inorganic polymer-based encapsulant.

3. The package (100) according to claim 1 or 2, wherein: The encapsulant (106) includes at least one of the group consisting of cement, concrete, gypsum, mortar, silicon polymer and aluminum polymer.

4. The package (100) according to claim 1 or 2, wherein: The morphological adhesion promoter (150) includes at least one of the group consisting of metal structures, alloy structures, alloy oxide structures, chromium structures, vanadium structures, molybdenum structures, zinc structures, manganese structures, cobalt structures, nickel structures, copper structures, flame deposited structures, roughened metal structures, and any alloys, alloy oxides, oxides, nitrides, carbides, and selenides of the structures.

5. The package (100) according to claim 4, wherein: The roughened metal structure is a roughened copper structure or a roughened aluminum oxide structure.

6. The package (100) according to any one of claims 1, 2 and 5, wherein: The plurality of openings (160) include at least one of the group consisting of holes, dendrites, and gaps between islands of the patterned structure.

7. The package (100) according to any one of claims 1, 2 and 5, wherein: The material of the adhesion promoter (150) is adapted to at least partially compensate for a mismatch between the coefficients of thermal expansion of the material of the electronic device (104) and the material of the encapsulant (106).

8. The package (100) according to any one of claims 1, 2 and 5, wherein: The adhesion promoter (150) forms an interlayer (152) in the interface region between the encapsulant (106) and the electronic device (104).

9. The package (100) according to claim 8, wherein: The package (100) comprises at least one of the following features: The interlayer (152) provides a transition in porosity between the encapsulant (106) and the electronic device (104); At least a portion of the pores of the interlayer (152) are at least partially filled with material of the encapsulant (106); The interlayer (152) has a thickness (d) in the range between 30 nm and 500 nm.

10. The package (100) according to claim 9, wherein: The transition of porosity between the encapsulant (106) and the electronic device (104) is continuous; and / or The interlayer (152) has a thickness (d) in the range between 50 nm and 200 nm.

11. The package (100) according to any one of claims 1, 2, 5, 9 and 10, wherein: The package (100) includes a carrier (102) on which an electronic device (104) is mounted, wherein the carrier (102) is at least partially encapsulated in the encapsulant (106).

12. The package (100) according to claim 11, wherein: The carrier (102) is at least partially covered with an adhesion promoter (150').

13. The package (100) according to claim 11, wherein: The package (100) comprises an electrically conductive contact element (110) electrically coupling the electronic device (104) with the carrier (102), wherein the electrically conductive contact element (110) is at least partially encapsulated in the encapsulant (106).

14. The package (100) according to claim 13, wherein: The electrically conductive contact element (110) is at least partially covered by an adhesion promoter (150").

15. The package (100) according to any one of claims 1, 2, 5, 9, 10, 12-14, wherein: The electronic device (104) includes at least one of the group consisting of a semiconductor chip, an active electronic device, a passive electronic device, a sensor, an actuator and a micro-electromechanical system.

16. The package (100) according to claim 15, wherein: The semiconductor chip is a power semiconductor chip.

17. A method for manufacturing a package (100), wherein: The method comprises: forming an adhesion promoter (150) on at least a portion of the electronic device (104); and at least partially encapsulating the electronic device (104) with an inorganic encapsulant (106) and positioning an adhesion promoter (150) between the inorganic encapsulant (106) and the electronic device (104), the adhesion promoter (150) enhancing adhesion between at least a portion of the electronic device (104) and the encapsulant (106), Wherein, the adhesion promoter is a morphological adhesion promoter, and the morphological adhesion promoter includes a morphological structure having a plurality of openings.

18. The method according to claim 17, wherein: The method includes forming the encapsulant (106) by providing a mixture of a solution and filler particles (184) disposed in the solution.

19. The method according to claim 18, wherein: The method includes providing a non-aqueous solvent to the solution.

20. The method according to claim 19, wherein: The non-aqueous solvent is alcohol.

21. The method according to any one of claims 17 to 20, wherein: The method includes contacting a topographic adhesion promoter (150) on the electronic device (104) with the solution such that the solution penetrates into a plurality of openings (160) in the topographic adhesion promoter (150).

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