Chemical mechanical polishing equipment and method and method for manufacturing display device

Abstract

The present disclosure relates to a chemical mechanical polishing device, a method for manufacturing a display device using the chemical mechanical polishing device, and a chemical mechanical polishing method, wherein the chemical mechanical polishing device includes: a conveyor belt for conveying a substrate; a polishing head arranged above the conveyor belt; and a main body component for moving the polishing head and supplying slurry to the polishing head. The polishing head includes: a first polishing component including a first polishing pad surrounding a first slurry outlet; and a second polishing component surrounding the first polishing component and including a second polishing pad. The second slurry outlet is formed between the first polishing component and the second polishing component, and the first polishing component and the second polishing component are movable independently of each other in a direction substantially perpendicular to the substrate.

Description

Technical Field

[0001] The present invention relates to a chemical mechanical polishing apparatus, a chemical mechanical polishing method, and a method for manufacturing a display device using the chemical mechanical polishing method. The present invention also relates to a chemical mechanical polishing apparatus and a chemical mechanical polishing method for manufacturing a display device, and a method for manufacturing a display device using the chemical mechanical polishing method. Background Art

[0002] Small and lightweight display devices have been manufactured. Cathode ray tube (CRT) displays have been manufactured due to performance and competitive pricing. However, CRT displays have disadvantages due to their relatively large size and / or lack of portability. Therefore, displays such as plasma displays, liquid crystal displays, and organic light emitting displays are favored due to their small size, their light weight or portability, and their low power consumption.

[0003] Flexible displays are being developed, and the displays can be manufactured by separating a thin film layer from a carrier glass after forming the thin film layer on the carrier glass. However, the thin film layer that may remain on the carrier glass is not easily removed, making it difficult to recycle the carrier glass, and this causes problems in manufacturing and potentially contributes to increased costs.

[0004] It should be understood that the background technology section is intended, in part, to provide a useful background for understanding the technology. However, the background technology section may also include ideas, concepts or understandings that are not part of the ideas, concepts or understandings known or anticipated by a person skilled in the relevant art prior to the corresponding effective filing date of the subject matter disclosed herein. Summary of the invention

[0005] One or more embodiments of the present disclosure provide a chemical mechanical polishing apparatus.

[0006] One or more embodiments of the present disclosure also provide a chemical mechanical polishing method.

[0007] One or more embodiments of the present disclosure also provide a method of manufacturing a display device using a chemical mechanical polishing method.

[0008] According to an embodiment, a chemical mechanical polishing apparatus includes: a conveyor belt that transfers a substrate; a polishing head that is disposed above the conveyor belt; and a main body component that is connected to the polishing head, the main body component moves the polishing head and supplies slurry to the polishing head. The polishing head includes: a first slurry outlet; a first polishing component that includes a first polishing pad surrounding the first slurry outlet; and a second polishing component that surrounds the first polishing component and includes a second polishing pad. The second slurry outlet is disposed between the first polishing component and the second polishing component, wherein the first polishing component and the second polishing component are independently movable from each other in a direction substantially perpendicular to the substrate.

[0009] In an embodiment, the chemical mechanical polishing apparatus may further include: a first rotating member connected to the first polishing component; and a second rotating member surrounding the first rotating member and connected to the second polishing component. The first slurry outlet may be formed along the first polishing component and the first rotating member. The second slurry outlet may be formed between the first polishing component and the second polishing component and between the first rotating member and the second rotating member.

[0010] In an embodiment, the first polishing member may have a cylindrical shape, and the first polishing member and the second polishing member may be rotatable together or separately.

[0011] In an embodiment, the chemical mechanical polishing apparatus may further include: a third polishing member surrounding the second polishing member and including a third polishing pad.

[0012] In an embodiment, the chemical mechanical polishing apparatus may further include: a third polishing member spaced apart from the first polishing member and including a third polishing pad. The second polishing member may be disposed between the first polishing member and the third polishing member. The area of ​​the first polishing pad and the area of ​​the third polishing pad may be different from each other.

[0013] In an embodiment, the chemical mechanical polishing equipment may further include: a supporting component disposed on the conveyor belt adjacent to the substrate to compensate for a step difference with the substrate.

[0014] In an embodiment, the thickness of the substrate may be similar or approximately equal to the thickness of the support member.

[0015] In an embodiment, the first polishing pad may have a first area and the second polishing pad may have a second area. When the polishing head overlaps substantially the entire area of ​​the substrate in plan view, both the first polishing member and the second polishing member may contact the substrate to polish the substrate. When the polishing head partially overlaps the substrate in plan view, the first polishing member may be vertically moved closer to the substrate than the second polishing member, so that only the first polishing member may contact the substrate to polish the substrate.

[0016] In an embodiment, the chemical mechanical polishing apparatus may further include a third polishing pad having a third area, wherein when the polishing head overlaps the substantially entire area of ​​the substrate in a plan view, the first polishing member, the second polishing member, and the third polishing member may contact the substrate to polish the substrate.

[0017] According to an embodiment, a chemical mechanical polishing method includes: loading a substrate onto a conveyor belt; polishing an upper surface of the substrate by a chemical mechanical polishing device, the chemical mechanical polishing device including a polishing head disposed above the conveyor belt, wherein the polishing head includes a first slurry outlet, a first polishing component surrounding the first slurry outlet, and a second polishing component surrounding the first polishing component; polishing the upper surface of the substrate with at least one of the first polishing component and the second polishing component; and unloading the substrate from the conveyor belt.

[0018] In an embodiment, the chemical mechanical polishing method may further include: attaching a support member adjacent to the substrate on the conveyor belt to compensate for a step difference with the substrate.

[0019] In an embodiment, when the polishing head overlaps substantially the entire area of ​​the substrate in plan view, both the first polishing member and the second polishing member may contact the substrate to polish the substrate.

[0020] In an embodiment, the chemical mechanical polishing method may further include: providing a third polishing component in the chemical mechanical polishing equipment; and polishing the upper surface of the substrate with the first polishing component, the second polishing component and the third polishing component when the polishing head overlaps with the substantially entire area of ​​the substrate in a plan view.

[0021] In an embodiment, when the polishing head partially overlaps the substrate in plan view, the first polishing member may be vertically moved closer to the substrate than the second polishing member so that only the first polishing member may contact the substrate to polish the substrate.

[0022] According to an embodiment, a method for manufacturing a display device includes: forming a display device on a carrier substrate, separating the display device from the carrier substrate, removing a residual layer on the carrier substrate by chemical mechanical polishing equipment, removing an outer portion remaining at an edge portion on the carrier substrate by the chemical mechanical polishing equipment, and forming a new display device on the carrier substrate.

[0023] In an embodiment, the chemical mechanical polishing apparatus may include a first polishing member and a second polishing member. Removing the residual layer may include polishing the carrier substrate with the first polishing member and the second polishing member.

[0024] In an embodiment, removing the outer portion may include vertically moving the first polishing article closer to the carrier substrate than the second polishing article, such that only the first polishing article may polish the carrier substrate to remove the outer portion.

[0025] In an embodiment, the outer portion may have a height higher than the residual layer.

[0026] In an embodiment, the method may further include: before removing the residual layer, loading the carrier substrate onto a conveyor belt. The removing of the residual layer and the removing of the outer portion may be performed while the carrier substrate is transferred by the conveyor belt.

[0027] In an embodiment, the method may further include: attaching a support member adjacent to the carrier substrate on the conveyor belt to compensate for a step difference with the carrier substrate.

[0028] In an embodiment, the chemical mechanical polishing apparatus may include: a conveyor belt that conveys a carrier substrate; a polishing head that is disposed above the conveyor belt; and a body component that moves the polishing head and supplies slurry to the polishing head. The polishing head may include a first polishing component and a second polishing component. A second slurry outlet may be formed between the first polishing component and the second polishing component, and the method may further include moving the first polishing component and the second polishing component independently of each other in a direction substantially perpendicular to the carrier substrate.

[0029] In an embodiment, the method may further include: forming the first polishing member to have a cylindrical shape.The first polishing member and the second polishing member may be rotatable together or separately.

[0030] In an embodiment, forming the display device may include: forming a plurality of insulating layers, a plurality of thin film transistors, a plurality of circuit lines, and a plurality of organic light emitting diodes on the carrier substrate.

[0031] According to the present embodiment, the chemical mechanical polishing apparatus may include: a conveyor belt conveying a substrate; a polishing head disposed above the conveyor belt; and a main body component connected to the polishing head, the main body component moving the polishing head and supplying slurry to the polishing head. The polishing head may include: a first polishing component including a first slurry outlet and a first polishing pad surrounding the first slurry outlet; and a second polishing component surrounding the first polishing component and including a second polishing pad. The second slurry outlet may be formed between the first polishing component and the second polishing component, and the first polishing component and the second polishing component may be movable independently of each other in a direction substantially perpendicular to the substrate.

[0032] When the polishing head completely overlaps with the substrate in plan view, that is, when the chemical mechanical polishing process is performed on a large area of ​​the central portion of the substrate, all of the first to third polishing members can be used, resulting in the large area of ​​the substrate being polished. On the other hand, when the polishing head partially overlaps with the substrate in plan view, that is, when the chemical mechanical polishing process is performed on a local area of ​​the edge portion of the substrate, only the first polishing member or the first and second polishing members are used, so that a local area smaller than the large area of ​​the substrate can be polished.

[0033] In an embodiment, including a support member attached to the conveyor belt to compensate for a separation step difference from the substrate can prevent excessive grinding at the edge portion of the substrate.

[0034] In an embodiment, the slurry for chemical mechanical polishing can be discharged through the first slurry outlet of the first polishing member, the second slurry outlet between the first polishing member and the second polishing member, and the third slurry outlet between the second polishing member and the third polishing member. Therefore, the slurry can be effectively and directly supplied between the substrate to be processed and the polishing head. As another example, the second slurry outlet and the third slurry outlet can be formed or arranged in the space between the first polishing member and the second polishing member and between the second polishing member and the third polishing member, respectively, instead of forming separate flow paths, so that the structure of the chemical mechanical polishing equipment can be simplified.

[0035] It is to be understood that both the foregoing general description and the following detailed description are explanatory and are intended to provide further explanation of the disclosure as claimed. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] The above and other features of the present disclosure will become more apparent by describing the embodiments of the present disclosure in detail with reference to the accompanying drawings, in which:

[0037] Figure 1 is a schematic side view showing a chemical mechanical polishing apparatus according to an embodiment;

[0038] Figure 2 It is shown Figure 1 A partial enlarged view of a polishing head of a chemical mechanical polishing device and its relationship with a substrate on a conveyor belt;

[0039] Figure 3 It is shown Figure 1 A plan view of a polishing head, a substrate, and supporting components around the substrate of a chemical mechanical polishing device;

[0040] Figure 4 It is shown Figure 1 A schematic cross-sectional view of a polishing head of a chemical mechanical polishing device;

[0041] Figure 5 It is shown Figure 4 A three-dimensional view of the lower surface of the polishing head;

[0042] FIG. 6A to FIG. 6C It is shown Figure 4 A schematic cross-sectional view of the operation of the polishing head;

[0043] Figure 7 is a plan view showing a lower surface of a polishing head of a chemical mechanical polishing apparatus according to an embodiment;

[0044] Figure 8 is a plan view showing a lower surface of a polishing head of a chemical mechanical polishing apparatus according to an embodiment;

[0045] 9A to 9F is a schematic cross-sectional view illustrating a method of manufacturing a display device using a chemical mechanical polishing apparatus and a chemical mechanical polishing method according to an embodiment; and

[0046] Fig.10 is a flowchart illustrating a method of manufacturing a display device using a chemical mechanical polishing apparatus and a chemical mechanical polishing method according to an embodiment. DETAILED DESCRIPTION

[0047] Although the present disclosure can be modified in various ways and have additional embodiments, the embodiments are shown in the drawings and will be mainly described in the specification. However, the scope of the present disclosure is not limited to the embodiments in the drawings and the specification, and should be interpreted as including all changes, equivalents and substitutions included in the spirit and scope of the present disclosure.

[0048] For describing the embodiments of the present disclosure, some of the components that are not related to the description may not be provided, and the same reference numerals refer to the same elements throughout the specification.

[0049] In the accompanying drawings, the size and thickness of the elements may be exaggerated for clarity and ease of description. However, the present disclosure is not limited to the sizes and thicknesses shown. In the accompanying drawings, the thickness of layers, films, panels, regions and other elements may be exaggerated for clarity. In the accompanying drawings, the thickness of certain layers and regions may be exaggerated for better understanding and ease of description.

[0050] Furthermore, in the specification, the phrase “in a plan view” means when an object portion is viewed from above, and the phrase “in a schematic cross-sectional view” means when a schematic cross section formed by vertically cutting the object portion is viewed from the side.

[0051] In addition, the term "overlap" or "overlapped" means that the first object can be above or below or on the side of the second object, and vice versa. In addition, the term "overlap" can include stacking, stacking, facing (face) or facing (facing), extending above it, covering or partially covering or any other suitable term that a person of ordinary skill in the art will understand and understand. The terms "facing" and "facing" mean that the first element can be directly or indirectly opposite to the second element. In the case where a third element is between the first and second elements, the first and second elements can be understood to be indirectly opposite to each other, although the first and second elements are still facing each other. When an element is described as "not overlapping" another element or "not overlapping" with another element, this can include: the elements are spaced apart from each other, offset from each other, or separated from each other, or any other suitable term that a person of ordinary skill in the art will understand and understand.

[0052] When a layer, film, region, substrate or district is referred to as "on" another layer, film, region, substrate or district, it can be directly on another layer, film, region, substrate or district, or there can be an intermediate layer, film, region, substrate or district between them. On the contrary, when a layer, film, region, substrate or district is referred to as "directly on" another layer, film, region, substrate or district, there can be no intermediate layer, film, region, substrate or district between them. In addition, when a layer, film, region, substrate or district is referred to as "below" another layer, film, region, substrate or district, it can be directly below another layer, film, region, substrate or district, or there can be an intermediate layer, film, region, substrate or district between them. On the contrary, when a layer, film, region, substrate or district is referred to as "directly on" another layer, film, region, substrate or district, there can be no intermediate layer, film, region, substrate or district between them. In addition, "above ... " or "on ... " can include being positioned on or below an object, and does not necessarily mean a direction based on gravity.

[0053] For ease of description, spatially relative terms such as "below", "under", "below", "above", or "on" may be used herein to describe the relationship between one element or component and another element or component as shown in the drawings. It will be understood that, in addition to the orientations depicted in the drawings, spatially relative terms are also intended to cover different orientations of the device in use or operation. For example, in a case where the device shown in the drawings is flipped, an element or component positioned "below" or "below" another element or component may be placed "above" another element or component. Therefore, the example term "below" may include both a lower position and an upper position. The device may also be oriented in other directions, and therefore spatially relative terms may be interpreted differently depending on the orientation.

[0054] Throughout the specification, when an element is referred to as being "connected" to another element, the element may be "directly connected" to the other element, or "electrically connected" to the other element with one or more intermediate elements interposed therebetween. It will be further understood that when the terms "comprises", "comprising", "includes" and / or "including" are used in this specification, they or it may specify the presence of stated features, integers, steps, operations, elements and / or components, but do not exclude the presence or addition of other features, integers, steps, operations, elements, components and / or any combination thereof.

[0055] It will be understood that although the terms "first," "second," or "third," etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another element, or to facilitate description and explanation thereof. For example, when discussing a "first element" in the description, the "first element" may be referred to as a "second element" or a "third element," and the "second element" and "third element" may be referred to in a similar manner without departing from the teachings herein.

[0056] As used herein, "about" or "approximately" includes the stated value and means within an acceptable range of deviation for the particular value as determined by one of ordinary skill in the art, taking into account the measurement of the particular quantity in question and the errors associated with the measurements (i.e., the limitations of the measurement system). For example, "about" can mean within one or more standard deviations, or within ±30%, ±20%, ±5% of the stated value.

[0057] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those skilled in the art to which the present disclosure belongs. It will be further understood that, unless explicitly defined in the specification, terms, such as those defined in general dictionaries, should be interpreted as having a meaning consistent with their meaning in the context of the relevant art, and the terms will not be interpreted in an idealized or overly formal sense.

[0058] Hereinafter, the present disclosure will be explained in detail with reference to the accompanying drawings.

[0059] Figure 1 is a schematic side view showing a chemical mechanical polishing apparatus according to an embodiment.

[0060] Reference Figure 1 The chemical mechanical polishing apparatus may include a first conveying component 400, a first conveyor driving component 310, a second conveyor driving component 320, a conveyor belt 330, a supporting component 340, a tension adjusting component 350, a polishing head 100, a main body component 200 and a second conveying component 500.

[0061] The first conveying member 400 may load the substrate (carrying substrate) 10 onto the conveyor belt 330. The first conveying member 400 may include a roller 420 for conveying the substrate 10 and a roller driver 410 for rotating the roller 420. For example, the roller driver 410 may rotate the roller 420 to convey the substrate 10 in the first direction D1 to load the substrate 10 onto the conveyor belt 330.

[0062] The first conveyor driving member 310 and the second conveyor driving member 320 may be driving rollers spaced apart from each other in the first direction D1. The conveyor belt 330 may be rotated by the first conveyor driving member 310 and the second conveyor driving member 320 to transfer the substrate 10 in the first direction D1.

[0063] The support member 340 may be located below the polishing head 100. The conveyor belt 330 may be located between the support member 340 and the polishing head 100.

[0064] The tension adjusting component 350 can adjust the tension of the conveyor belt 330 .

[0065] The polishing head 100 may be disposed or positioned on the conveyor belt 330 and the support member 340 to cause friction when in contact with the substrate 10 so that the upper surface of the substrate 10 may be mechanically polished. During the mechanical polishing of the substrate 10, a slurry for chemical polishing may be supplied together with the mechanical polishing so that a chemical mechanical polishing (CMP) process may be performed. The slurry may be supplied to the substrate 10 through one or more outlets of the polishing head 100. The slurry outlet may be, for example, Figure 4In the figure, a first slurry outlet SH1, a second slurry outlet SH2 and a third slurry outlet SH3 can be shown. The slurry can be a composition including an abrasive and a solvent.

[0066] The polishing head 100 may be movable along a third direction D3, which may be substantially perpendicular to the substrate 10. Figure 1 As shown in FIG. 1 , the polishing head 100 may be moved to a selected position on the substrate 10 by moving in the first direction D1 and / or the third direction D3. The polishing head 100 may also be configured to be rotated.

[0067] The body part 200 may be connected to the polishing head 100 to move and rotate the polishing head 100 and supply slurry to the polishing head 100 .

[0068] The second transfer member 500 may include a roller 520 for transferring the substrate 10 and a roller driver 510 for rotating the roller 520. For example, the roller driver 510 rotates the roller 520 to transfer the substrate 10 in the first direction D1, thereby removing the substrate 10 from the conveyor belt 330 to unload the substrate 10.

[0069] Generally, a chemical mechanical polishing (CMP) process is a process for planarizing or polishing a semiconductor wafer. In the CMP process, fine particles for mechanical polishing and a slurry including chemicals for etching, dissolving and / or oxidizing the surface of the semiconductor wafer are supplied, and one or more polishing pads are rotated to chemically and mechanically polish the surface of the semiconductor wafer.

[0070] In the present disclosure, by applying a chemical mechanical polishing process on a transportable substrate opposite to a fixed wafer, the process speed, process efficiency and process quality of the chemical mechanical polishing process can be improved. Figures 2 to 5 A further detailed description is described.

[0071] Figure 2 It is shown Figure 1 A partial enlarged view of the polishing head of the chemical mechanical polishing equipment and its relationship to the substrate on the conveyor belt. Figure 3 It is shown Figure 1 A plan view of a polishing head, a substrate, and supporting components around the substrate of a chemical mechanical polishing device. Figure 4 It is shown Figure 1 Schematic cross-sectional view of a polishing head of a chemical mechanical polishing device. Figure 5 It is shown Figure 4 A stereoscopic view of the lower surface of the polishing head.

[0072] Reference Figures 2 to 5, the polishing head 100 may include: a first polishing component 110 including a first polishing pad 112, a second polishing component 120 including a second polishing pad 122, a third polishing component 130 including a third polishing pad 132, a first rotating member 114, a second rotating member 124, a third rotating member 134, a first slurry outlet SH1, a second slurry outlet SH2, and a third slurry outlet SH3. It should be understood that the number of slurry outlets is not limited to the number of slurry outlets shown in the drawings, and any number of slurry outlets may be included within the spirit and scope of the present disclosure. The first rotating member 114, the second rotating member 124, and the third rotating member 134 may be a rod, a rod, or an attachment device or other suitable structure within the spirit and scope of the present disclosure. The shape and / or configuration of the first rotating member 114, the second rotating member 124, and the third rotating member 134 are not limited to the shape and / or configuration shown in the drawings, and may be any shape or configuration within the spirit and scope of the present disclosure. For example, the first rotation member 114 , the second rotation member 124 , and the third rotation member 134 may have a substantially curved shape or an L-shape in a schematic cross-sectional view, or may be substantially cylindrical.

[0073] The first polishing component 110 may have a cylindrical shape. The first polishing component 110 may be connected to the first rotating member 114 to be rotated by the rotation of the first rotating member 114. The first polishing component 110, the second polishing component 120, and the third polishing component 130 may have different areas relative to each other. For example, the first polishing component 110 may have a smaller area than the second polishing component 120, and the third polishing component 130 may have a larger area than the second polishing component 120 or the first polishing component 110. The first polishing component 110, the second polishing component 120, and the third polishing component 130 may have a disc-like shape in a perspective view. The first polishing pad 112, the second polishing pad 122, and the third polishing pad 132 may have the same, similar, or different areas relative to each other.

[0074] The first polishing pad 112 may be attached to the lower surface of the first polishing component 110 and may have an annular or substantially circular shape. The first polishing pad 112 may be provided to be detachably attached under the first polishing component 110. The first polishing pad 112 may be made of nonwoven fabric, foamed polyurethane, or other suitable materials within the spirit and scope of the present disclosure.

[0075] As in Figure 4 As shown in FIG. 1 , a first slurry outlet SH1 may be formed through or along the first polishing device 110 and the first rotating member 114 to supply slurry between the first polishing pad 112 and the substrate 10 .

[0076] In the same or similar manner, a second slurry outlet SH2 may be formed through or along the second polishing equipment 120 and the second rotating member 124 to supply slurry between the second polishing pad 122 and the substrate 10 .

[0077] The second polishing member 120 may surround the first polishing member 110 and have an annular or annular extended column shape. The second polishing member 120 may be connected to a second rotating member 124 surrounding the first rotating member 114 to be rotated by the second rotating member 124.

[0078] The second polishing pad 122 may be attached to the lower surface of the second polishing component 120 and may have an annular or substantially annular or circular shape. The second polishing pad 122 may be provided to be detachably attached under the second polishing component 120. The second polishing pad 122 may be made of nonwoven fabric, foamed polyurethane, or other suitable materials within the spirit and scope of the present disclosure.

[0079] The third polishing component 130 may surround the second polishing component 120 and have an annular or ring-shaped extended column shape. The third polishing component 130 may be connected to a third rotating member 134 surrounding the second rotating member 124 to be rotated by the third rotating member 134.

[0080] The third polishing pad 132 may be attached to the lower surface of the third polishing component 130 and may have a substantially annular shape. The third polishing pad 132 may be provided to be detachably attached under the third polishing component 130. The third polishing pad 132 may be made of nonwoven fabric, foamed polyurethane, or other suitable materials within the spirit and scope of the present disclosure.

[0081] For example, the first polishing member 110, the second polishing member 120, and the third polishing member 130 may be provided to be rotatable together or to be independently rotatable, respectively. Each of the first polishing member 110, the second polishing member 120, and the third polishing member 130 may be independently moved along a third direction D3 that may be substantially perpendicular to the substrate 10, so that the polishing area may be changed to be applied to various areas of the substrate 10. Figures 6A to 6C An example of the above is shown in FIG.

[0082] When the polishing head 100 completely overlaps the substrate 10 in a plan view, all of the first polishing parts 110, the second polishing parts 120, and the third polishing parts 130 may contact the substrate 10 to polish the substrate 10, as in Fig. 6A. Full overlap may include that the polishing head 100 may overlap substantially the entire area of ​​the substrate 10. When the polishing head 100 partially overlaps the substrate 10 in a plan view, the first polishing member 110 may vertically move closer to the substrate 10 than the second polishing member 120 and the third polishing member 130, so that only the first polishing member 110 may contact the substrate 10 to polish the substrate 10, as shown in FIG. Figure 6C As shown in Figure 6B In the embodiment, the first polishing article 110 and the second polishing article 120 may vertically move closer to the substrate 10 than the third polishing article 130 so that the first polishing article 110 and the second polishing article 120 may contact the substrate 10 to polish the substrate 10 .

[0083] In a chemical mechanical polishing process performed on a substrate, when a large polishing pad is used, chemical mechanical polishing is possible for a large area. However, polishing a substrate with a large polishing pad may not be accurate and suitable for polishing a local or small protrusion. On the other hand, when a small polishing pad is used, the small polishing pad is advantageous for polishing a local or small protrusion, but the polishing speed may be reduced.

[0084] According to an embodiment, the first polishing member, the second polishing member, and the third polishing member of the polishing head of the chemical mechanical polishing apparatus may be independently movable in the vertical direction. Therefore, it is possible to perform chemical mechanical polishing on an appropriate range of regions or areas of the substrate depending on the polishing position and characteristics of the substrate to be processed.

[0085] For example, the polishing head may completely overlap the substrate or substantially overlap the substrate in plan view. When the chemical mechanical polishing process is performed on a large area of ​​the central portion of the substrate, all of the first to third polishing members may be used, thereby allowing large-area polishing. On the other hand, when the polishing head partially overlaps the substrate in plan view, that is, when the chemical mechanical polishing process is performed on a local area of ​​an edge portion of the substrate, only the first polishing member or the first and second polishing members may be used, so that a local area smaller than the large area of ​​the substrate can be polished.

[0086] At this time, excessive grinding at the edge portion of the substrate 10 can be prevented by attaching the support member 12 on the conveyor belt 330 to compensate for the step difference with the substrate 10. The support member 12 can be coplanar with the substrate 10 so that the thickness t1 of the substrate 10 can be approximately or equal to the thickness t2 of the support member 12, thereby preventing the polishing head 100 from grinding around the edge of the substrate 10. The above description can refer to Figure 2 understand.

[0087] The slurry used for chemical mechanical polishing can be discharged through the first slurry outlet of the first polishing member, the second slurry outlet between the first polishing member and the second polishing member, and the third slurry outlet between the second polishing member and the third polishing member. Therefore, the slurry can be effectively and directly supplied between the substrate to be processed and the polishing head. The second slurry outlet and the third slurry outlet can be formed or arranged in the space between the first polishing member and the second polishing member and between the second polishing member and the third polishing member, respectively, instead of forming separate flow paths, so that the structure of the chemical mechanical polishing equipment can be simplified.

[0088] FIG. 6A to FIG. 6C It is shown Figure 4 A schematic cross-sectional view of the operation of the polishing head.

[0089] Reference Fig. 6A When all of the first polishing unit 110, the second polishing unit 120, and the third polishing unit 130 can be used for polishing, a large area A1 of the substrate 10 can be polished at one time. The slurry can be supplied through the first slurry outlet SH1, the second slurry outlet SH2, and the third slurry outlet SH3.

[0090] Reference Figure 6B , the first polishing member 110 and the second polishing member 120 may be vertically moved closer to the substrate 10 than the third polishing member 130, so that only the first polishing member 110 and the second polishing member 120 are used for polishing, and the middle area A2 of the substrate 10 may be polished at one time. For example, the slurry may be supplied through the first slurry outlet SH1 and the second slurry outlet SH2.

[0091] Reference Figure 6C , the first polishing member 110 can be vertically moved closer to the substrate 10 than the second polishing member 120 and the third polishing member 130, so that only the first polishing member 110 is used for polishing, and it is possible to polish a small area A3 of the substrate 10 at a time. For example, the slurry can be supplied through the first slurry outlet SH1.

[0092] Figure 7 is a plan view showing a lower surface of a polishing head of a chemical mechanical polishing apparatus according to an embodiment.

[0093] Reference Figure 7 Except for the shape of the polishing head 100, the chemical mechanical polishing apparatus is similar to the one in Figures 1 to 5 The chemical mechanical polishing apparatus described in is substantially the same as that described above. Therefore, descriptions of features identical to those described above will be omitted.

[0094] The lower surface of the polishing head 100 may have a substantially rectangular shape. The polishing head 100 may be larger than one side of the substrate 10. The polishing head 100 may polish the substrate 10 by reciprocating motion and / or bending motion on the substrate 10 instead of rotational motion.

[0095] As in Figure 7 As shown in FIG. 1 , the lower surface of the first polishing member 110 may have a substantially rectangular shape. The second polishing member 120 may have a substantially rectangular ring shape surrounding the first polishing member 110. The third polishing member 130 may have a substantially rectangular ring shape surrounding the second polishing member 120.

[0096] The first slurry outlet SH1 may be formed in the first polishing member 110. The second slurry outlet SH2 may be formed in a substantially quadrilateral shape between the first polishing member 110 and the second polishing member 120. The third slurry outlet SH3 may be formed in a substantially quadrilateral shape between the second polishing member 120 and the third polishing member 130.

[0097] Figure 8 is a plan view showing a lower surface of a polishing head of a chemical mechanical polishing apparatus according to an embodiment.

[0098] Reference Figure 8 Except for the shape of the polishing head 100, the chemical mechanical polishing apparatus is similar to the one in Figures 1 to 5 The chemical mechanical polishing apparatus described in is substantially the same as that described above. Therefore, descriptions of features identical to those described above will be omitted.

[0099] The lower surface of the polishing head 100 may be substantially annular or circular. The lower surface of the first polishing member 110 and the lower surface of the second polishing member 120 may have substantially annular or circular shapes with different sizes. The second polishing member 120 may be spaced apart from the first polishing member 110. The third polishing member 130 may surround the first polishing member 110 and the second polishing member 120.

[0100] The first slurry outlet SH1 may be formed in the first polishing unit 110, and the second slurry outlet SH2 may be formed in the second polishing unit 120. The third slurry outlet SH3 may be formed between the first polishing unit 110 and the third polishing unit 130. The fourth slurry outlet SH4 may be formed between the second polishing unit 120 and the third polishing unit 130.

[0101] 9A to 9F is a schematic cross-sectional view illustrating a method of manufacturing a display device using a chemical mechanical polishing apparatus and a chemical mechanical polishing method according to an embodiment.

[0102] Reference Fig.9AThe display device 20 may be formed on the carrier substrate 10. For example, the display device 20 may be a flexible display. The display device 20 may be obtained by forming a thin film on the carrier substrate 10. For example, the display device 20 may include a plurality of insulating layers, a plurality of thin film transistors, a plurality of circuit lines, a plurality of organic light emitting diodes, etc. The display device 20 may be formed by various methods that can be understood and comprehended by those of ordinary skill in the art.

[0103] Reference Fig. 9B , the display device 20 on the carrier substrate 10 may be separated from the carrier substrate 10. In this case, a portion of the thin film of the display device 20 may remain on the carrier substrate 10. For example, in the separation of the display device 20, the residual layer 21 may remain on the carrier substrate 10, and the outer portion 22 corresponding to the edge of the display device 20 may remain. The residual layer 21 may be a portion of the lower layer of the display device 20. The outer portion 22 may be a structure in which the thin film layer of the edge portion of the display device 20 is stacked. Therefore, the outer portion 22 may have a height higher than that of the residual layer 21.

[0104] Reference Fig. 9C , the residual layer 21 on the carrier substrate 10 can be removed. The chemical mechanical polishing equipment according to the embodiment can be used. Figure 1 and Figure 4 , the chemical mechanical polishing apparatus may include: a conveyor belt 330 for conveying a carrier substrate 10; a polishing head 100 disposed above the conveyor belt 330; and a main body part 200 for moving the polishing head 100 and supplying slurry to the polishing head 100. The polishing head 100 may include: a first polishing part 110, in which a first slurry outlet SH1 may be formed, and including a first polishing pad 112 surrounding the first slurry outlet SH1; a second polishing part 120 surrounding the first polishing part 110 and including a second polishing pad 122; and a third polishing part 130 surrounding the second polishing part 120 and including a third polishing pad 132.

[0105] As an example, the polishing head 100 may have a first slurry outlet SH1 formed therein, and may include: a first polishing unit 110 including a first polishing pad 112 surrounding the first slurry outlet SH1; a second polishing unit 120 including a second polishing pad 122 surrounding the first polishing unit 110; and a third polishing unit 130 including a third polishing pad 132 surrounding the second polishing unit 120. A second slurry outlet SH2 may be formed between the first polishing unit 110 and the second polishing unit 120. A third slurry outlet SH3 may be formed between the second polishing unit 120 and the third polishing unit 130. The first polishing unit 110, the second polishing unit 120, and the third polishing unit 130 may be movable independently of each other in a direction substantially perpendicular to the carrier substrate 10.

[0106] In this case, the residual layer 21 can remain on the carrier substrate 10, so that the first polishing unit 110, the second polishing unit 120 and the third polishing unit 130 can be used for polishing for large area polishing. Fig. 6A A1 of the substrate 10 can be polished at one time for a large area. In this case, the slurry SH3 can be supplied through the first slurry outlet SH1, the second slurry outlet SH2, and the third slurry outlet.

[0107] Reference Fig.9D , the outer portion 22 on the carrier substrate 10 can be removed. In this case, the residual layer 21 can be removed using a chemical mechanical polishing device. Since the outer portion 22 remains on the carrier substrate 10 at the edge portion of the carrier substrate 10 and is formed at a higher height than the residual layer 21, the first polishing unit 110 can be vertically moved closer to the carrier substrate 10 than the second polishing unit 120 and the third polishing unit 130, so that only the first polishing unit 110 can be used for polishing, and as shown Figure 6C A3 can polish a small area. In this case, the slurry can be supplied through the first slurry outlet SH1.

[0108] Reference Fig.9E and Fig.9F , all the residual layer 21 and the outer portion 22 remaining on the carrier substrate 10 are removed, and a new display device 30 can be formed using the carrier substrate 10. The new display device 30 can be formed on the carrier substrate 10 from which the residual layer 21 and the outer portion 22 are removed.

[0109] Fig.10 is a flowchart illustrating a method of manufacturing a display device using a chemical mechanical polishing apparatus and a chemical mechanical polishing method according to an embodiment.

[0110] Reference Fig.10, the method for manufacturing a display device may include: forming a display device on a carrier substrate (S100); separating the display device from the carrier substrate (S200); removing a residual layer from the carrier substrate (S300); removing an outer portion remaining on the carrier substrate (S400); and forming a new display device on the carrier substrate (S500). The display device manufactured by the method may include a flexible display.

[0111] According to an embodiment, a chemical mechanical polishing apparatus includes: a conveyor belt that conveys a substrate; a polishing head that is disposed above the conveyor belt; and a main body component that moves the polishing head and supplies slurry to the polishing head. The polishing head may include: a first polishing component, in which a first slurry outlet may be formed including a first polishing pad surrounding the first slurry outlet; and a second polishing component that surrounds the first polishing component and includes a second polishing pad. The second slurry outlet may be formed between the first polishing component and the second polishing component, and the first polishing component and the second polishing component may be movable independently of each other in a direction perpendicular to the substrate.

[0112] When the polishing head completely or substantially overlaps the substrate in plan view, the chemical mechanical polishing process can be performed on a large area of ​​the central portion of the substrate, so that all of the first to third polishing members are used to polish the large area. On the other hand, when the polishing head partially overlaps the substrate in plan view, the chemical mechanical polishing process is performed on a local area of ​​the edge portion of the substrate, so that only the first polishing member or the first and second polishing members can be used, thereby polishing a local area smaller than the large area.

[0113] By attaching a support member to the conveyor belt to compensate for the step difference with the substrate, excessive grinding at the edge portion of the substrate can be prevented.

[0114] The slurry used for chemical mechanical polishing can be discharged through the first slurry outlet of the first polishing member, the second slurry outlet between the first polishing member and the second polishing member, and / or the third slurry outlet between the second polishing member and the third polishing member. Therefore, the slurry can be effectively and directly supplied between the substrate and the polishing head. In other embodiments, the second slurry outlet and the third slurry outlet can be formed or realized by using the space between the first polishing member and the second polishing member and between the second polishing member and the third polishing member, rather than forming separate flow paths, so that the structure of the chemical mechanical polishing equipment can be simplified.

[0115] The present disclosure may be applicable to organic light-emitting display devices and various electronic devices including organic light-emitting display devices. For example, the present disclosure may be applied to the manufacture of mobile phones, smart phones, video phones, smart personal digital assistants, smart watches, tablet computers, vehicle navigation systems, televisions, computer monitors, and notebooks, etc. However, this list is not exhaustive and may include other display devices within the spirit and scope of the present disclosure.

[0116] The foregoing is an explanation of the present disclosure and should not be construed as limiting the present disclosure. Although several embodiments of the present disclosure have been described, it will be readily appreciated by those skilled in the art that many modifications in the embodiments are possible without substantially departing from the novel teachings and advantages of the present disclosure. Therefore, all such modifications are intended to be included within the scope of the present disclosure. Therefore, it should be understood that the foregoing is an explanation of the present disclosure and should not be construed as being limited to the specific embodiments disclosed, and modifications to the disclosed embodiments and other embodiments are intended to be included within the scope of the present disclosure.

Claims

1. A chemical mechanical polishing device, comprising: Conveyor belt, conveying substrate; A polishing head is arranged above the conveyor belt; as well as a main body member connected to the polishing head, the main body member moving the polishing head and supplying slurry to the polishing head, and Wherein, the polishing head comprises: a first polishing member including a first polishing pad, a first slurry outlet formed in the first polishing member; a second polishing article including a second polishing pad spaced apart from the first polishing article at only one side of the first polishing article, a second slurry outlet formed in the second polishing article; a third polishing member including a third polishing pad surrounding the entire periphery of each of the first polishing member and the second polishing member, a third slurry outlet formed between the first polishing member and the third polishing member and surrounding the entire periphery of the first polishing member, and a fourth slurry outlet formed between the second polishing member and the third polishing member and surrounding the entire periphery of the second polishing member; The first polishing member, the second polishing member and the third polishing member are movable independently of each other in a direction perpendicular to the substrate.

2. The chemical mechanical polishing equipment according to claim 1, wherein: The chemical mechanical polishing equipment also includes: a first rotating member connected to the first polishing part; and A second rotating member connected to the second polishing component, wherein The first slurry outlet is formed along the first polishing part and the first rotating member, and The second slurry outlet is formed along the second polishing article and the second rotating member.

3. The chemical mechanical polishing equipment according to claim 2, wherein: The first polishing member and the second polishing member each have a cylindrical shape, and The first polishing member and the second polishing member are rotatable together or separately.

4. The chemical mechanical polishing equipment according to claim 1, wherein: The chemical mechanical polishing equipment also includes: A supporting member is disposed on the conveyor belt adjacent to the substrate to compensate for a step difference with the substrate.

5. The chemical mechanical polishing equipment according to claim 4, wherein: The thickness of the base is equal to the thickness of the supporting member.

6. The chemical mechanical polishing equipment according to claim 1, wherein: The first polishing pad has a first area, The second polishing pad has a second area, When the polishing head overlaps the entire area of ​​the substrate in a plan view, both the first polishing member and the second polishing member contact the substrate to polish the substrate, and When the polishing head partially overlaps the substrate in plan view, the first polishing member vertically moves closer to the substrate than the second polishing member so that only the first polishing member contacts the substrate to polish the substrate.

7. The chemical mechanical polishing equipment according to claim 6, wherein: When the polishing head overlaps the entire area of ​​the substrate in a plan view, the first polishing member, the second polishing member, and the third polishing member contact the substrate to polish the substrate.

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