Substrate processing device and method

Abstract

A substrate processing device is provided. The substrate processing device includes a substrate supporting portion, a plasma generating portion, and a power supply portion, wherein: the substrate supporting portion supports a substrate and can fix the substrate by electrostatic force; the plasma generating portion generates discharge plasma for discharging electric charges of the substrate; and the power supply portion supplies electric power to the substrate supporting portion and the plasma generating portion, wherein the power supply portion supplies electric power having a wave pattern to the plasma generating portion when discharging electric charges of the substrate.

Description

Technical Field

[0001] The invention relates to a substrate processing device and method. Background Art

[0002] When manufacturing a semiconductor device or a display device, various processes such as photolithography, etching, ashing, ion implantation, thin film deposition, and cleaning may be performed. Here, the photolithography process includes coating, exposure, and development processes. A photosensitive liquid is coated on a substrate (i.e., a coating process), a circuit pattern is formed by exposing the substrate on which a photosensitive film is formed (i.e., an exposure process), and the exposed area of ​​the substrate is selectively developed (i.e., a development process).

[0003] In the process chamber, the substrate may be supported on an electrostatic chuck that may fix the substrate by electrostatic force generated by electrostatic induction. Summary of the invention

[0004] Technical issues solved

[0005] The problem to be solved by the present invention is to provide a substrate processing device and method.

[0006] Problems of the present invention are not limited to the problems mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art through the following description.

[0007] Solution to the problem

[0008] One aspect of the substrate processing device of the present invention for solving the problem includes a substrate supporting part, a plasma generating part and a power supply part, wherein: the substrate supporting part supports the substrate and is capable of fixing the substrate by electrostatic force; the plasma generating part generates a discharge plasma for discharging the charge of the substrate; the power supply part supplies power to the substrate supporting part and the plasma generating part, wherein the power supply part supplies power having a wave pattern to the plasma generating part when discharging the charge of the substrate.

[0009] The power supply part includes a first power supply part and a second power supply part, wherein: the first power supply part supplies DC power to the substrate support part; and the second power supply part supplies RF power to the plasma generation part.

[0010] The first power supply unit applies a first discharge DC voltage smaller than a DC voltage used for processing the substrate when discharging the charge of the substrate, and applies a second discharge DC voltage smaller than the first discharge DC voltage after applying the first discharge DC voltage.

[0011] The second power supply unit supplies a first discharge RF power smaller than RF power used for process treatment of the substrate when discharging the charge of the substrate, supplies a second discharge RF power larger than the first discharge RF power after supplying the first discharge RF power, and supplies a third discharge RF power smaller than the first and second discharge RF powers after supplying the second discharge RF power.

[0012] The power pattern supplied by the first power supply unit and the second power supply unit includes a process treatment interval, a discharge start interval, a disorder degree improvement interval and a discharge end interval, wherein: process treatment is performed on the substrate in the process treatment interval; the process on the substrate is completed and the substrate starts to discharge in the discharge start interval; the disorder degree of the charge remaining on the substrate is improved in the disorder degree improvement interval; and the charge remaining on the substrate is continuously discharged in the discharge end interval.

[0013] The first power supply unit supplies less power in the discharge start section than in the process section, and supplies less power in the disorder degree increasing section and the discharge end section than in the discharge start section.

[0014] The second power supply unit supplies less power than the process section in the discharge start section, less power than the process section and more power than the discharge start section in the disorder degree increasing section, and less power than the discharge start section and the disorder degree increasing section in the discharge end section.

[0015] The discharge plasma is the same as the process plasma formed by exciting a process gas used for a process of a substrate.

[0016] The discharge plasma is generated after a process on the substrate is completed by the process plasma.

[0017] The power supply unit changes the intensity of the charge applied to the substrate by the discharge plasma, thereby increasing the degree of disorder of the charge on the substrate.

[0018] One aspect of the substrate processing method of the present invention for solving the problem includes: a step of performing a process on a substrate fixed on a substrate support part by an electrostatic force; and a step of generating a discharge plasma using a plasma generating part to remove electric charges remaining on the substrate, wherein the discharge plasma is generated by supplying electric power having a fluctuation pattern to the plasma generating part.

[0019] The first power supply unit that applies a DC voltage to the substrate support unit applies a first discharge DC voltage that is smaller than a DC voltage used for processing the substrate when discharging the charge of the substrate, and applies a second discharge DC voltage that is smaller than the first discharge DC voltage after applying the first discharge DC voltage.

[0020] The second power supply unit that supplies RF power to the plasma generating unit supplies a first discharge RF power that is smaller than the RF power used for process treatment of the substrate when discharging the charge of the substrate, supplies a second discharge RF power that is larger than the first discharge RF power after supplying the first discharge RF power, and supplies a third discharge RF power that is smaller than the first and second discharge RF powers after supplying the second discharge RF power.

[0021] The power pattern supplied to the substrate support part and the plasma generating part includes a process treatment interval, a discharge start interval, a disorder degree increasing interval and a discharge end interval, wherein: process treatment of the substrate is performed in the process treatment interval; the process for the substrate is completed and the substrate starts to discharge in the discharge start interval; the disorder degree of the charge remaining on the substrate is increased in the disorder degree increasing interval; and the charge remaining on the substrate is continuously discharged in the discharge end interval.

[0022] In the discharge start section, the substrate support portion is supplied with less power than in the process section, and in the disorder degree increasing section and the discharge end section, the substrate support portion is supplied with less power than in the discharge start section.

[0023] In the discharge start interval, the plasma generating unit is supplied with less power than that in the process treatment interval, in the disorder degree increasing interval, the plasma generating unit is supplied with less power than that in the process treatment interval and greater than that in the discharge start interval, and in the discharge end interval, the plasma generating unit is supplied with less power than that in the discharge start interval and the disorder degree increasing interval.

[0024] The discharge plasma is the same as the process plasma formed by exciting a process gas used for a process of a substrate.

[0025] The discharge plasma generated by the power having the fluctuation pattern changes the intensity of the charge acting on the substrate, thereby increasing the disorder of the charge existing on the substrate.

[0026] Another aspect of the substrate processing device of the present invention for solving the problem includes a substrate supporting part, a plasma generating part and a power supply part, wherein: the substrate supporting part supports the substrate and is capable of fixing the substrate by electrostatic force; the plasma generating part generates discharge plasma for discharging the charge of the substrate; the power supply part supplies power to the substrate supporting part and the plasma generating part, wherein the power supply part supplies a first discharge RF power smaller than when a process is performed on the substrate to the plasma generating part when discharging the charge of the substrate, and then supplies a second discharge RF power larger than the first discharge RF power to the plasma generating part, and then supplies a third discharge RF power smaller than the second discharge RF power to the plasma generating part, wherein the third discharge RF power has a value greater than 0.

[0027] The second discharge RF power increases the degree of disorder of the charges remaining on the substrate.

[0028] Specific details of other embodiments are included in the detailed description and drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 FIG. 1 is a diagram showing a substrate processing apparatus according to an embodiment of the present invention.

[0030] Figure 2 It shows the support Figure 1 A diagram showing a process performed on a substrate on a substrate processing apparatus is shown.

[0031] Figure 3 is to show the generation of Figure 2 Figure 1. A diagram of plasma discharge on a substrate during the process.

[0032] Figure 4 It is shown in the Figure 2 and Figure 3 A diagram showing a power pattern supplied by a power supply unit during a process of the substrate shown. DETAILED DESCRIPTION

[0033] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. With reference to the embodiments described in detail below in conjunction with the accompanying drawings, the advantages and features of the present invention and the methods for achieving the advantages and features will become clear. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various different forms, and the present embodiments are provided only to complete the disclosure of the present invention and to fully inform the scope of the invention to a person of ordinary skill in the art to which the present invention belongs, and the present invention is limited only by the scope of the claims. Throughout the specification, the same reference numerals refer to the same constituent elements.

[0034] When an element or layer is referred to as being "above" or "over" another element or layer, it includes not only being directly above another element or layer, but also including the case where another layer or element intervenes. Conversely, when an element is referred to as being "directly above" or "directly over," it means that there is no other element or layer intervening.

[0035] Spatially relative terms such as "below", "below", "lower", "above", "upper", etc. may be used to facilitate description of the relationship between an element or constituent element as shown in the figure and other elements or constituent elements. Spatially relative terms should be understood as terms that include different directions of the element when in use or in operation in addition to the direction shown in the figure. For example, in the case where the elements shown in the figure are flipped, an element described as being "below" or "below" another element may be positioned "above" another element. Therefore, the exemplary term "below" may include both below and above directions. Elements may also be oriented in other directions, and therefore spatially relative terms may be interpreted based on the orientation.

[0036] Although the terms first, second, etc. are used to describe various elements, constituent elements and / or parts, it is clear that these elements, constituent elements and / or parts are not limited by these terms. These terms are only used to distinguish one element, constituent element or part from other elements, constituent elements or parts. Therefore, within the technical concept of the present invention, the first element, first constituent element or first part mentioned below can obviously also be the second element, second constituent element or second part.

[0037] The terms used in this specification are used to describe the embodiments and are not intended to limit the present invention. In this specification, unless otherwise specified in a sentence, the singular form also includes the plural form. The "comprises" and / or "comprising" used in the specification means including the mentioned constituent elements, steps, operations and / or elements, without excluding the existence or addition of more than one other constituent elements, steps, operations and / or elements.

[0038] Unless otherwise defined, all terms (including technical terms and scientific terms) used in this specification can be used as meanings that are generally understood by those of ordinary skill in the art to which the present invention belongs. In addition, unless clearly and specifically defined, terms defined in commonly used dictionaries should not be interpreted in an idealized or excessive manner.

[0039] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, and when describing with reference to the accompanying drawings, the same or corresponding components are given the same reference numerals regardless of the drawing numbers, and repeated description thereof is omitted.

[0040] Figure 1 FIG. 1 is a diagram showing a substrate processing apparatus according to an embodiment of the present invention.

[0041] refer to Figure 1 The substrate processing apparatus 10 is configured to include a substrate support portion 100 , a plasma generation portion 200 , power supply portions 310 and 320 , and a control portion 400 .

[0042] The substrate support part 100 can support a substrate. In addition, the substrate support part 100 can fix the supported substrate by electrostatic force. The substrate support part 100 is configured to include an electrostatic body 110 and an electrostatic chuck 120 .

[0043] The electrostatic body 110 may support the electrostatic chuck 120. In addition, the electrostatic body 110 may space the electrostatic chuck 120 apart by a certain distance from the bottom surface of the space in which the substrate support part 100 is provided.

[0044] The electrostatic chuck 120 plays a role of supporting the substrate. One surface of the substrate is opposite to the electrostatic chuck 120, and the substrate can be supported by the one surface being closely attached to the supporting surface of the electrostatic chuck 120.

[0045] The electrostatic chuck 120 can fix the substrate by electrostatic force. To this end, the electrostatic chuck 120 can have an electrostatic electrode 130. The electrostatic electrode 130 can be electrically connected to the first power supply part 310. The electrostatic electrode 130 can generate an electrostatic force by the power supplied by the first power supply part 310. The power supplied by the first power supply part 310 can be a DC power. The substrate can be adsorbed to the electrostatic chuck 120 by the electrostatic force of the electrostatic electrode 130.

[0046] The substrate support part 100 may have a through hole H formed therein. The through hole H may be formed to sequentially cross the electrostatic body 110 and the electrostatic chuck 120. The lift pins 140 may move along the through hole H. That is, the lift pins 140 may move in a length direction of the through hole H.

[0047] The lifting pins 140 play a role in lifting and lowering the substrate mounted on the substrate support part 100. Due to the through hole H of the substrate support part 100, the support surface of the electrostatic chuck 120 is formed with an opening, wherein the lifting pins 140 can protrude or be inserted through the opening to lift and lower the substrate. Although not shown, a driving part (not shown) that lifts and lowers the lifting pins 140 along the through hole H may be provided.

[0048] The plasma generating part 200 may be disposed above the substrate supporting part 100. A processing space for performing a process on a substrate may be formed between the plasma generating part 200 and the substrate supporting part 100.

[0049] The plasma generating part 200 may generate plasma for performing a process on a substrate. The plasma generating part 200 may spray a process gas into a processing space and apply RF power to excite the process gas into plasma.

[0050] In addition, the plasma generating unit 200 may generate discharge plasma for discharging electric charges of the substrate. The discharge plasma may be plasma generated by exciting a process gas or may be plasma generated by exciting another gas.

[0051] The power supply parts 310 and 320 play a role of supplying power to the substrate support part 100 and the plasma generation part 200. By the power supplied by the power supply parts 310 and 320, the substrate support part 100 generates an electrostatic force, and the plasma generation part 200 can generate plasma.

[0052] In the case where the substrate support 100 fixes the substrate by electrostatic force to perform a process on the substrate, residual charges may exist on the substrate even after the process is completed. The residual charges may generate electrostatic force, thereby preventing the substrate from being separated from the substrate support 100. For example, in a state where residual charges exist on the substrate, when the substrate is lifted by the lifting pins, the substrate may be damaged or slip. Therefore, it is preferred to lift the substrate after discharging the charges of the substrate so as to remove all the residual charges existing on the substrate.

[0053] When discharging the charges of the substrate, the power supply unit 320 may supply power having a wave pattern to the plasma generation unit 200. That is, the power supply unit 320 may supply power having a rising and falling pattern to the plasma generation unit 200. As the magnitude of the power changes, the intensity of the charges acting on the substrate by the discharge plasma changes, and at the same time, the disorder of the charges existing on the substrate increases and the electrostatic force decreases.

[0054] The power supply parts 310 and 320 include a first power supply part 310 and a second power supply part 320. The first power supply part 310 may supply DC power to the substrate support part 100, and the second power supply part 320 may supply RF power to the plasma generation part 200.

[0055] The control unit 400 may control the first power supply unit 310 and the second power supply unit 320. The first power supply unit 310 and the second power supply unit 320 may adjust the magnitude of the power supplied by the control unit 400.

[0056] In the following, we will Figures 2 to 4 Describe the process and discharge process for the substrate.

[0057] Figure 2 It is shown that for the support Figure 1 FIG. 1 is a diagram showing a process performed on a substrate on a substrate processing apparatus, Figure 3 It shows that Figure 2 A diagram of generating a plasma for discharge in a substrate having completed the process, and Figure 4It shows that Figure 2 and Figure 3 A diagram showing a power pattern supplied by a power supply unit during a process of the substrate shown.

[0058] refer to Figure 2 , a process may be performed on the substrate W supported on the substrate support part 100 . For example, a process such as etching, thin film deposition, or cleaning may be performed on the substrate W. At this time, the process may also be performed by the plasma 20 .

[0059] In order to perform a process on the substrate W, the electrostatic chuck 120 may fix the substrate W by an electrostatic force. At this time, one surface of the substrate W contacting the electrostatic chuck 120 may be charged opposite to the electrostatic electrode 130 .

[0060] refer to Figure 3 , plasma 30 for discharge may be generated with respect to the substrate W after the process is completed.

[0061] A part of the electric charges on the substrate W may be discharged by the discharge plasma 30. The discharge plasma 30 may be the same as the process plasma 20.

[0062] When discharging the charge remaining on the substrate W, the control part 400 may control the first power supply part 310 and the second power supply part 320. Through the control of the control part 400, the first power supply part 310 may apply a first discharge DC voltage smaller than the DC voltage used to perform a process on the substrate W when discharging the charge of the substrate W, and apply a second discharge DC voltage smaller than the first discharge DC voltage after applying the first discharge DC voltage. In addition, through the control of the control part 400, the second power supply part 320 may supply a first discharge RF power smaller than the RF power used to perform a process on the substrate W when discharging the charge of the substrate W, supply a second discharge RF power larger than the first discharge RF power after supplying the first discharge RF power, and supply a third discharge RF power smaller than the first discharge RF power and the second discharge RF power after supplying the second discharge RF power.

[0063] Figure 4 Exemplary power patterns supplied by the first power supply part 310 and the second power supply part 320 when performing a process on the substrate W and discharging are shown.

[0064] Figure 4 (a) shows the voltage of the power supplied by the first power supply section 310, and Figure 4 (b) shows the magnitude of the power supplied by the second power supply section 320 .

[0065] The interval from 0 to t1 indicates an interval in which a process is performed on the substrate W. At this time, the first power supply part 310 and the second power supply part 320 may supply relatively large power for the process.

[0066] t1 is a time point when the process for the substrate W is completed, and the interval from t1 to t2 represents an interval in which the substrate W starts to discharge. At this time, the first power supply unit 310 applies a first discharge DC voltage V1 that is smaller than the DC voltage V0 used for the process, and the second power supply unit 320 can supply a first discharge RF power P1 that is smaller than the RF power P0 used for the process.

[0067] The interval from t2 to t3 indicates an interval in which the disorder degree of the charges remaining on the substrate W is increased. At this time, the first power supply unit 310 applies a second discharge DC voltage V2 that is smaller than the first discharge DC voltage V1, and the second power supply unit 320 may supply a second discharge RF power P2 that is larger than the first discharge RF power P1. Here, the second discharge DC voltage V2 may be 0V.

[0068] Since the relatively large second discharge RF power P2 is supplied after the relatively small first discharge RF power P1 is supplied, the disorder of the charges remaining on the substrate W will be increased.

[0069] The interval after t3 indicates the end of the discharge to the substrate W. At this time, the second power supply unit 320 can supply a third discharge RF power P3 that is smaller than the first discharge RF power P1 and the second discharge RF power P2. By supplying the extremely small third discharge RF power P3, the charges remaining on the substrate W are continuously discharged by the discharge plasma 30.

[0070] The embodiments of the present invention are described above with reference to the accompanying drawings, but those skilled in the art will appreciate that the present invention can be implemented in other specific forms without changing its technical ideas or essential features. Therefore, it should be understood that the embodiments described above are exemplary in all aspects and not restrictive.

Claims

1. A substrate processing device, comprising: A substrate support portion supports the substrate and is capable of fixing the substrate by electrostatic force; a plasma generating unit for generating discharge plasma for discharging electric charges on the substrate; as well as a power supply unit for supplying power to the substrate support unit and the plasma generation unit, wherein the power supply section supplies power having a wave pattern to the plasma generating section when discharging electric charge of the substrate by supplying power to the plasma generating section; Wherein, the power supply unit includes: a second power supply unit, supplying RF power to the plasma generating unit; The second power supply unit supplies a first discharge RF power smaller than an RF power used for a process on the substrate when discharging the electric charge of the substrate. supplying a second discharging RF power greater than the first discharging RF power after supplying the first discharging RF power, and A third discharging RF power smaller than the first discharging RF power is supplied after the second discharging RF power is supplied.

2. The substrate processing apparatus according to claim 1, wherein: The power supply unit further includes: The first power supply unit supplies direct current power to the substrate support unit.

3. The substrate processing apparatus according to claim 2, wherein: The first power supply unit applies a first discharge DC voltage smaller than a DC voltage used for a process on the substrate when discharging the charge of the substrate, and A second discharge DC voltage smaller than the first discharge DC voltage is applied after the first discharge DC voltage is applied.

4. The substrate processing apparatus according to claim 2, wherein: The power patterns supplied by the first power supply section and the second power supply section include: A process treatment section, in which a process treatment is performed on the substrate; a discharge start interval, in which a process for the substrate is completed and the substrate starts to discharge; a disorder degree increasing interval, in which the disorder degree of the charges remaining on the substrate is increased; and The discharge end section is a section in which the charges remaining on the substrate are continuously discharged during the disorder degree increasing section.

5. The substrate processing apparatus according to claim 4, wherein: The first power supply unit supplies less power in the discharge start section than in the process section, and In the disorder degree increasing section and the discharge end section, less power is supplied than in the discharge start section.

6. The substrate processing apparatus according to claim 4, wherein: The second power supply unit supplies less power in the discharge start section than in the process section, supplying, in the disorder degree increasing section, power which is smaller than that in the process treatment section and larger than that in the discharge starting section, and In the discharge end section, less power is supplied than in the discharge start section and the disorder degree increasing section.

7. The substrate processing apparatus according to claim 1, wherein: The discharge plasma is the same as the process plasma formed by exciting a process gas used for a process of the substrate.

8. The substrate processing apparatus according to claim 7, wherein: The discharge plasma is generated after a process for the substrate is completed by the process plasma.

9. The substrate processing apparatus according to claim 1, wherein: The power supply unit changes the intensity of charges applied to the substrate by the discharge plasma, thereby increasing the degree of disorder of charges on the substrate.

10. A substrate processing method, comprising: The step of performing a process on a substrate fixed on a substrate support by electrostatic force; as well as a step of generating discharge plasma by using a plasma generating unit to remove the charge remaining on the substrate, wherein the discharge plasma is generated by supplying electric power having a wave pattern to the plasma generating portion; wherein the second power supply unit that supplies RF power to the plasma generating unit supplies a first discharge RF power that is smaller than RF power used for a process on the substrate when discharging the charge of the substrate, supplying a second discharging RF power greater than the first discharging RF power after supplying the first discharging RF power, and A third discharging RF power smaller than the first discharging RF power is supplied after the second discharging RF power is supplied.

11. The substrate processing method according to claim 10, wherein: a first power supply unit for applying a DC voltage to the substrate support unit, applying a first discharge DC voltage smaller than a DC voltage used for a process on the substrate when discharging the charge of the substrate; and A second discharge DC voltage smaller than the first discharge DC voltage is applied after the first discharge DC voltage is applied.

12. The substrate processing method according to claim 10, wherein: The power pattern supplied to the substrate support portion and the plasma generating portion includes: A process treatment section, in which a process treatment is performed on the substrate; a discharge start interval, in which a process for the substrate is completed and the substrate starts to discharge; a disorder degree increasing interval, in which the disorder degree of the charges remaining on the substrate is increased; and The discharge end section is a section in which the charges remaining on the substrate are continuously discharged during the disorder degree increasing section.

13. The substrate processing method according to claim 12, wherein: In the discharge start section, a smaller power than that in the process section is supplied to the substrate support portion, and In the disorder degree increasing section and the discharge ending section, a smaller power than that in the discharge starting section is supplied to the substrate supporting portion.

14. The substrate processing method according to claim 12, wherein: In the discharge start section, a smaller power than that in the process section is supplied to the plasma generation unit, In the disorder degree increasing section, the plasma generating portion is supplied with power which is smaller than that in the process treatment section and larger than that in the discharge starting section, and In the discharge end section, a smaller power is supplied to the plasma generating unit than in the discharge start section and the disorder degree increasing section.

15. The substrate processing method according to claim 10, wherein: The discharge plasma is the same as the process plasma formed by exciting a process gas used for a process of the substrate.

16. The substrate processing method according to claim 10, wherein: The discharge plasma generated by the power having the fluctuation pattern changes the intensity of the charges acting on the substrate, thereby increasing the disorder of the charges existing on the substrate.

17. A substrate processing device, comprising: A substrate support portion supports the substrate and is capable of fixing the substrate by electrostatic force; a plasma generating unit for generating discharge plasma for discharging electric charges on the substrate; as well as a power supply unit for supplying power to the substrate support unit and the plasma generation unit, Wherein, the power supply unit includes: a second power supply unit, supplying RF power to the plasma generating unit; wherein the second power supply unit supplies a first discharge RF power smaller than that when performing a process on the substrate when discharging the charge of the substrate by supplying power to the plasma generation unit, then supplies a second discharge RF power larger than the first discharge RF power to the plasma generation unit, and then supplies a third discharge RF power smaller than the first discharge RF power to the plasma generation unit, The third discharge RF power has a value greater than zero.

18. The substrate processing apparatus according to claim 17, wherein: The second discharge RF power increases the degree of disorder of charges remaining on the substrate.

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