A shear wave static correction method and device based on shallow stack modeling

Abstract

This invention provides a method and apparatus for static correction of shear waves based on shallow stacking modeling. The method includes: selecting a shallow stacking reflection phase axis on a shear wave seismic stacking profile and obtaining several shallow stacking velocity control points based on the shallow stacking reflection phase axis; reading the basic data of the shallow stacking velocity control points, including stacking velocity and reflection two-way travel time; calculating the surface average velocity, thickness, and maximum velocity of the shear wave shallow control points based on the basic data; constructing a shear wave model using the shear wave shallow control points and calculating the static correction amount of the shear wave. This application is applicable to shear wave seismic exploration projects. By using shallow stacking modeling, the static correction amount of the shear wave can be calculated quickly and directly, which is simple and effective, reduces the dependence on shear wave first arrival and shear wave surface surveys, and lowers exploration costs.

Description

Technical Field

[0001] The present application belongs to the technical field of seismic data processing, and in particular, relates to a shear wave static correction method and device based on shallow stack modeling. Background Art

[0002] The Qaidam Basin is an important gas source area for natural gas exploration in western China. With the deepening of exploration, the imaging accuracy of conventional P-wave exploration in gas cloud areas is limited, and the use of S-wave exploration technology to reveal the laws of natural gas reservoirs has become another means. Compared with P-waves, S-waves have a lower speed. Affected by surface conditions, the problem of S-wave static correction is more serious. The change of S-wave surface velocity is difficult to control, and the time shift caused by S-wave static correction is larger. At present, the S-wave first arrival inversion technology and S-wave surface survey technology are usually used to solve the problem of S-wave static correction. However, S-wave exploration basically uses S-wave controllable vibrator to excite seismic S-waves. Affected by surface conditions and S-wave source machinery, the quality of S-wave first arrival is not high and it is difficult to pick up effectively; the traditional S-wave surface survey method is not accurate, the survey depth is limited, and the cost of S-wave surface survey is high, which is difficult to implement on a large scale, which affects the accuracy of S-wave models and S-wave static correction, and further affects the quality of S-wave seismic profile data. Summary of the invention

[0003] The present application provides a shear wave static correction method and device based on shallow stack modeling, in order to at least solve the problem that the current shear wave surface survey method is not accurate, the survey depth is limited, and the shear wave surface survey is expensive and difficult to implement on a large scale, thus affecting the accuracy of the shear wave model and shear wave static correction.

[0004] According to one aspect of the present application, a shear wave static correction method based on shallow stack modeling is provided, comprising:

[0005] Select shallow stack reflection events on the shear wave seismic stack section and obtain several shallow stack velocity control points based on the shallow stack reflection events;

[0006] Read the basic data of shallow stacking velocity control points, including stacking velocity and reflection two-way travel time;

[0007] Calculate the average surface velocity, thickness and maximum velocity of the shear wave shallow control point based on the basic data;

[0008] The shear wave model is constructed through the shear wave shallow control points and the static correction of the shear wave is calculated.

[0009] In one embodiment, a shallow stack reflection event is selected on a shear wave seismic stack section and a plurality of shallow stack velocity control points are obtained according to the shallow stack reflection event, including:

[0010] Select the shallow stack reflection event axis that can be continuously traced on the shear wave seismic stack section;

[0011] For the shallow stacking reflection event axis, the shallow stacking velocity control point is selected according to the preset CMP interval.

[0012] In one embodiment, the average surface velocity, thickness and maximum velocity of the shear wave shallow control point are calculated based on the basic data, including:

[0013] The average velocity and the maximum velocity of the surface layer are obtained according to the stacking velocity;

[0014] The thickness is calculated based on the stacking velocity and the reflection two-way travel time.

[0015] In one embodiment, a shear wave model is constructed through shear wave shallow layer control points and the static correction of the shear wave is calculated, including:

[0016] Interpolation of shallow shear wave control points;

[0017] Construct a shear wave model based on all shear wave shallow control points after interpolation processing;

[0018] The shear wave static correction is calculated using the shear wave model.

[0019] According to another aspect of the present application, a shear wave static correction device based on shallow layer stacking modeling is also provided, comprising:

[0020] A shallow stacking velocity control point acquisition unit is used to select shallow stacking reflection events on a shear wave seismic stacking section and acquire a number of shallow stacking velocity control points according to the shallow stacking reflection events;

[0021] Basic data reading unit, used to read the basic data of shallow stacking velocity control points, including stacking velocity and reflection two-way travel time;

[0022] A calculation unit, used for calculating the surface average velocity, thickness and maximum velocity of the shear wave shallow control point according to the basic data;

[0023] The model building and static correction calculation unit is used to build a shear wave model through shear wave shallow layer control points and calculate the static correction of the shear wave.

[0024] In one embodiment, the shallow stacking velocity control point acquisition unit includes:

[0025] Shallow stack reflection event selection module, used to select shallow stack reflection events that can be continuously tracked on the shear wave seismic stack section;

[0026] The shallow stacking velocity control point selection module is used to select shallow stacking velocity control points for shallow stacking reflection events according to preset CMP intervals.

[0027] In one embodiment, the computing unit comprises:

[0028] A first calculation module is used to obtain the surface average velocity and the maximum velocity according to the stacking velocity;

[0029] The second calculation module is used to calculate the thickness according to the stacking velocity and the reflection round-trip travel time.

[0030] In one embodiment, the model building and static correction calculation unit includes:

[0031] An interpolation processing module is used to perform interpolation processing on the shallow control points of shear waves;

[0032] A model building module is used to build a shear wave model according to all shear wave shallow control points after interpolation processing;

[0033] The static correction calculation module is used to calculate the static correction of shear waves using a shear wave model. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0035] Figure 1 A flow chart of a shear wave static correction method provided in this application.

[0036] Figure 2 This is a flow chart for obtaining shallow stacking velocity control points in an embodiment of the present application.

[0037] Figure 3 This is a flow chart for calculating the shallow control points of shear waves in an embodiment of the present application.

[0038] Figure 4 This is a flow chart of constructing a shear wave model and calculating the static correction of shear waves in an embodiment of the present application.

[0039] Figure 5 The shear wave seismic stacking profile provided for this application.

[0040] Figure 6 Schematic diagram of CMP interval setting provided in this application.

[0041] Figure 7 This is a structural block diagram of a shear wave static correction device provided in this application.

[0042] Figure 8It is a structural block diagram of the shallow stacking velocity control point acquisition unit in the embodiment of the present application.

[0043] Fig. 9 4 is a structural block diagram of a computing unit in an embodiment of the present application.

[0044] Fig.10 It is a structural block diagram of the model construction and static correction calculation unit in the embodiment of the present application.

[0045] Fig.11 This is a specific implementation of an electronic device in an embodiment of the present application. DETAILED DESCRIPTION

[0046] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0047] At present, the shear wave static correction problem is usually solved by using shear wave first arrival inversion technology and shear wave surface survey technology. However, shear wave exploration basically uses shear wave controllable source to excite seismic shear waves. Affected by surface conditions and shear wave source mechanics, the shear wave first arrival quality is not high and it is difficult to pick up effectively; the traditional shear wave surface survey method is not accurate, the survey depth is limited, and the shear wave surface survey is expensive and difficult to implement on a large scale, which affects the accuracy of shear wave model and shear wave static correction, and further affects the quality of shear wave seismic profile data. This application does not rely on shear wave first arrival data and surface survey data, but directly uses the relative change relationship between the stacking velocity and reflection travel time of the shallow stacked event axis, and reads the stacking velocity and reflection travel time on the velocity spectrum by selecting reasonable velocity and time control points. The relative shear wave model of the shallow layer is established by editing and interpolation, which provides a reference for shear wave seismic data processing modeling and static correction calculation.

[0048] like Figure 1 As shown, a shear wave static correction method based on shallow stacking modeling provided by the present application includes:

[0049] S101: Selecting a shallow stack reflection event on a shear wave seismic stack profile and obtaining a number of shallow stack velocity control points based on the shallow stack reflection event.

[0050] In one embodiment, a shallow stack reflection event is selected on the shear wave seismic stack section and a plurality of shallow stack velocity control points are obtained according to the shallow stack reflection event, such as Figure 2 As shown, including:

[0051] S201: Select a shallow stack reflection event axis that can be continuously traced on the shear wave seismic stack profile.

[0052] S202: Selecting shallow stacking velocity control points for shallow stacking reflection events according to a preset CMP interval.

[0053] In a specific embodiment, a relatively shallow stack reflection event axis (such as Figure 5 The arrow indicates the shallow stacking event axis). For the selected shallow stacking reflection axis, the stacking velocity and reflection two-way travel time are read at a certain CMP interval and used as a velocity and time control point (i.e. shallow stacking velocity control point).

[0054] The CMP interval is basically set according to the magnitude of the distortion of the shear wave superposition event axis (such as Figure 6 As shown in the figure), it is mainly used to control the low-frequency change of the event axis. The CMP interval setting can be achieved by professional data processing software.

[0055] S102: Reading basic data of shallow stacking velocity control points, the basic data including: stacking velocity and reflection round-trip travel time.

[0056] In a specific embodiment, the stacking velocity and the reflection round-trip travel time of the shallow stacking velocity control point are read, and the stacking velocity and the reflection round-trip travel time of each control point are output in a text format, which includes: CMP pile number (coordinates), stacking velocity and reflection round-trip travel time.

[0057] S103: Calculate the average surface velocity, thickness and maximum velocity of the shear wave shallow control point based on the basic data.

[0058] In one embodiment, the average surface velocity, thickness and maximum velocity of the shear wave shallow control point are calculated based on the basic data, such as Figure 3 As shown, including:

[0059] S301: Obtain the surface average velocity and maximum velocity according to the stacking velocity.

[0060] S302: Calculate the thickness based on the stacking velocity and the reflection round-trip travel time.

[0061] In a specific embodiment, the stacking velocity value is regarded as the surface average velocity v 0 ;

[0062] The corresponding thickness h 0 For: superposition speed value X When reflecting a two-way trip;

[0063] Corresponding high speed v 1It is: P-wave velocity ratio x stacking velocity value; the P-wave velocity ratio can be selected as an average value based on the knowledge of the area and can be a constant.

[0064] After editing, the format is the same as that of conventional surface survey control points: stake number, v 0 、h 0 、v 1 .

[0065] S104: construct a shear wave model through shear wave shallow layer control points and calculate the static correction of the shear wave.

[0066] In one embodiment, a shear wave model is constructed by using shear wave shallow control points and the static correction of the shear wave is calculated, such as Figure 4 As shown, including:

[0067] S401: Interpolation processing is performed on the shallow shear wave control points.

[0068] S402: Construct a shear wave model according to all the shear wave shallow control points after interpolation processing.

[0069] S403: Calculate the static correction of the shear wave using the shear wave model.

[0070] In a specific embodiment, interpolation processing is performed between shallow shear wave control points, a shear wave model corresponding to the shallow stacked event axis is established, and the static correction amount is calculated. The calculation of the static correction amount can be achieved by using professional computing software.

[0071] The present application relates to a shear wave static correction method, which is a method for calculating shear wave static correction based on shallow stacking modeling. The present application does not rely on shear wave first arrival data and surface survey data, but directly uses the relative change relationship between the stacking velocity and reflection travel time of the shallow stacking event axis, selects reasonable velocity and time control points, reads the stacking velocity and reflection travel time on the velocity spectrum, and establishes a shallow relative shear wave model through editing and interpolation, providing a reference for shear wave seismic data processing modeling and static correction calculation.

[0072] Based on the same inventive concept, the embodiments of the present application also provide a shear wave static correction device based on shallow stacking modeling, which can be used to implement the method described in the above embodiments, as described in the following embodiments. Since the principle of solving the problem by the shear wave static correction device based on shallow stacking modeling is similar to that of the shear wave static correction method based on shallow stacking modeling, the implementation of the shear wave static correction device based on shallow stacking modeling can refer to the implementation of the shear wave static correction method based on shallow stacking modeling, and the repeated parts will not be repeated. As used below, the term "unit" or "module" can be a combination of software and / or hardware that implements predetermined functions. Although the system described in the following embodiments is preferably implemented in software, the implementation of hardware, or a combination of software and hardware, is also possible and conceived.

[0073] A shear wave static correction device based on shallow stack modeling, such as Figure 7 As shown, including:

[0074] A shallow stacking velocity control point acquisition unit 701 is used to select a shallow stacking reflection event on a shear wave seismic stacking section and acquire a number of shallow stacking velocity control points according to the shallow stacking reflection event;

[0075] A basic data reading unit 702 is used to read basic data of shallow stacking velocity control points, including stacking velocity and reflection round-trip travel time;

[0076] A calculation unit 703 is used to calculate the surface average velocity, thickness and maximum velocity of the shear wave shallow control point according to the basic data;

[0077] The model building and static correction calculation unit 704 is used to build a shear wave model through shear wave shallow layer control points and calculate the static correction of the shear wave.

[0078] In one embodiment, if Figure 8 As shown, the shallow stacking velocity control point acquisition unit 701 includes:

[0079] A shallow stack reflection event selection module 801 is used to select a shallow stack reflection event that can be continuously tracked on a shear wave seismic stack profile;

[0080] The shallow stacking velocity control point selection module 802 is used to select shallow stacking velocity control points for shallow stacking reflection events according to a preset CMP interval.

[0081] In one embodiment, if Fig. 9 As shown, the calculation unit 703 includes:

[0082] The first calculation module 901 is used to obtain the surface average velocity and the maximum velocity according to the stacking velocity;

[0083] The second calculation module 902 is used to calculate the thickness according to the stacking velocity and the reflection round-trip travel time.

[0084] In one embodiment, if Fig.10 As shown, the model building and static correction amount calculation unit 704 includes:

[0085] An interpolation processing module 1001 is used to perform interpolation processing on the shear wave shallow layer control points;

[0086] A model building module 1002 is used to build a shear wave model according to all the shear wave shallow control points after interpolation processing;

[0087] The static correction calculation module 1003 is used to calculate the static correction of the shear wave using the shear wave model.

[0088] The present application is applicable to shear wave seismic exploration projects. By modeling based on shallow stacking, the shear wave static correction is calculated quickly and directly. This is simple and effective, reduces the reliance on shear wave first arrival and shear wave surface investigation, and reduces exploration costs.

[0089] Those skilled in the art will appreciate that embodiments of the present invention may be provided as methods, systems, or computer program products. Therefore, the present invention may take the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware. Moreover, the present invention may take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0090] The present invention is described with reference to flowcharts and / or block diagrams of methods, devices (systems), and computer program products according to embodiments of the present invention. It should be understood that each process and / or block in the flowchart and / or block diagram, as well as the combination of processes and / or blocks in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to produce a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0091] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0092] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operating steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing instructions for implementing the process. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.

[0093] The present invention uses specific embodiments to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea. At the same time, for those skilled in the art, according to the idea of ​​the present invention, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as a limitation on the present invention.

[0094] The embodiments of the present application also provide a specific implementation of an electronic device that can implement all the steps in the method in the above embodiments, see Fig.11 , the electronic device specifically includes the following contents:

[0095] Processor 1101, memory 1102, communication interface 1103, bus 1104 and non-volatile memory 1105;

[0096] The processor 1101, memory 1102, and communication interface 1103 communicate with each other via the bus 1104;

[0097] The processor 1101 is used to call the computer program in the memory 1102 and the non-volatile memory 1105. When the processor executes the computer program, all the steps in the method in the above embodiment are implemented. For example, when the processor executes the computer program, the following steps are implemented:

[0098] S101: Selecting a shallow stack reflection event on a shear wave seismic stack profile and obtaining a number of shallow stack velocity control points based on the shallow stack reflection event.

[0099] S102: Reading basic data of shallow stacking velocity control points, the basic data including: stacking velocity and reflection round-trip travel time.

[0100] S103: Calculate the average surface velocity, thickness and maximum velocity of the shear wave shallow control point based on the basic data.

[0101] S104: construct a shear wave model through shear wave shallow layer control points and calculate the static correction of the shear wave.

[0102] The embodiments of the present application also provide a computer-readable storage medium capable of implementing all the steps of the method in the above embodiments. The computer-readable storage medium stores a computer program. When the computer program is executed by a processor, all the steps of the method in the above embodiments are implemented. For example, when the processor executes the computer program, the following steps are implemented:

[0103] S101: Selecting a shallow stack reflection event on a shear wave seismic stack profile and obtaining a number of shallow stack velocity control points based on the shallow stack reflection event.

[0104] S102: Reading basic data of shallow stacking velocity control points, the basic data including: stacking velocity and reflection round-trip travel time.

[0105] S103: Calculate the average surface velocity, thickness and maximum velocity of the shear wave shallow control point based on the basic data.

[0106] S104: construct a shear wave model through shear wave shallow layer control points and calculate the static correction of the shear wave.

[0107] Each embodiment in this specification is described in a progressive manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the hardware + program embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment. Although the embodiment of this specification provides the method operation steps described in the embodiment or flow chart, more or less operation steps can be included based on conventional or non-creative means. The order of steps listed in the embodiment is only one way of executing the order of many steps, and does not represent the only execution order. When the device or terminal product in practice is executed, it can be executed in sequence or in parallel according to the method shown in the embodiment or the accompanying drawings (for example, a parallel processor or a multi-threaded processing environment, or even a distributed data processing environment). The term "include", "include" or any other variant thereof is intended to cover non-exclusive inclusion, so that the process, method, product or device including a series of elements includes not only those elements, but also includes other elements that are not explicitly listed, or also includes elements inherent to such a process, method, product or device. In the absence of more restrictions, it is not excluded that there are other identical or equivalent elements in the process, method, product or device including the elements. For the convenience of description, the above device is described by dividing it into various modules according to its functions. Of course, when implementing the embodiments of this specification, the functions of each module can be implemented in the same one or more software and / or hardware, or the module implementing the same function can be implemented by a combination of multiple sub-modules or sub-units. The device embodiments described above are only schematic. For example, the division of the units is only a logical function division. There may be other division methods in actual implementation, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the coupling or direct coupling or communication connection between each other shown or discussed can be through some interfaces, indirect coupling or communication connection of devices or units, which can be electrical, mechanical or other forms. The present invention is described with reference to the flowchart and / or block diagram of the method, device (system) and computer program product according to the embodiments of the present invention. It should be understood that each process and / or box in the flowchart and / or block diagram, as well as the combination of the process and / or box in the flowchart and / or block diagram can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to produce a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the process Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0108] Those skilled in the art will appreciate that the embodiments of this specification may be provided as methods, systems or computer program products. Therefore, the embodiments of this specification may be in the form of a complete hardware embodiment, a complete software embodiment or an embodiment combining software and hardware. Moreover, the embodiments of this specification may be in the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program codes. Each embodiment in this specification is described in a progressive manner, and the same and similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the system embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts refer to the partial description of the method embodiment. In the description of this specification, the description of the reference term "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the embodiment of this specification.

[0109] In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradicting each other. The above is only an embodiment of the embodiment of this specification and is not intended to limit the embodiment of this specification. For those skilled in the art, the embodiment of this specification may have various changes and variations. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the embodiment of this specification shall be included in the scope of the claims of the embodiment of this specification.

Claims

1. A shear wave static correction method based on shallow stack modeling, characterized in that: include: Selecting a shallow stack reflection event on a shear wave seismic stack section and obtaining a plurality of shallow stack velocity control points according to the shallow stack reflection event; Reading basic data of the shallow stacking velocity control point, the basic data including: stacking velocity and reflection round-trip travel time; Calculate the average surface velocity, thickness and maximum velocity of the shear wave shallow control point based on the basic data; A shear wave model is constructed through the shear wave shallow layer control points and the static correction of the shear wave is calculated; the shear wave model is a relative shear wave model of the shallow layer; The method of selecting a shallow stack reflection event on the shear wave seismic stack section and obtaining a plurality of shallow stack velocity control points according to the shallow stack reflection event includes: Select the shallow stack reflection event axis that can be continuously traced on the shear wave seismic stack section; A shallow stacking velocity control point is selected for the shallow stacking reflection event according to a preset CMP interval; the CMP interval is basically set according to the magnitude of the distortion amplitude of the shear wave stacking event; the stacking velocity and the reflection two-way travel time at the selected shallow stacking reflection event are read at a certain CMP interval and used as a velocity and time control point; The method of constructing a shear wave model through the shear wave shallow layer control points and calculating the static correction amount of the shear wave comprises: Performing interpolation processing on the shallow shear wave control points; Construct a shear wave model based on all shear wave shallow control points after interpolation processing; The shear wave model is used to calculate the shear wave static correction.

2. The shear wave static correction method based on shallow stacking modeling according to claim 1 is characterized in that: The calculating the surface average velocity, thickness and maximum velocity of the shallow shear wave control point according to the basic data comprises: Obtaining the surface average velocity and the maximum velocity according to the stacking velocity; The thickness is obtained by calculation according to the stacking velocity and the reflection round-trip travel time.

3. A shear wave static correction device based on shallow stack modeling, characterized in that: include: A shallow stacking velocity control point acquisition unit is used to select a shallow stacking reflection event on a shear wave seismic stacking section and acquire a plurality of shallow stacking velocity control points according to the shallow stacking reflection event; A basic data reading unit, used for reading basic data of the shallow stacking velocity control point, wherein the basic data includes: stacking velocity and reflection round-trip travel time; A calculation unit, used for calculating the surface average velocity, thickness and maximum velocity of the shear wave shallow layer control point according to the basic data; A model building and static correction calculation unit, used to build a shear wave model through the shear wave shallow layer control points and calculate the static correction of the shear wave; the shear wave model is a shallow layer relative shear wave model; The shallow stacking velocity control point acquisition unit comprises: Shallow stack reflection event selection module, used to select shallow stack reflection events that can be continuously tracked on the shear wave seismic stack section; A shallow stacking velocity control point selection module is used to select shallow stacking velocity control points for the shallow stacking reflection event according to a preset CMP interval; the CMP interval is basically set according to the magnitude of the distortion amplitude of the shear wave stacking event; the stacking velocity and reflection two-way travel time at the selected shallow stacking reflection event are read at a certain CMP interval, and used as a velocity and time control point; The model building and static correction calculation unit includes: An interpolation processing module, used for performing interpolation processing on the shear wave shallow layer control points; A model building module is used to build a shear wave model according to all shear wave shallow control points after interpolation processing; The static correction calculation module is used to calculate the static correction of the shear wave using the shear wave model.

4. The shear wave static correction device based on shallow layer stacking modeling according to claim 3 is characterized in that: The computing unit comprises: A first calculation module, used for obtaining the surface average velocity and the maximum velocity according to the stacking velocity; The second calculation module is used to calculate the thickness according to the stacking velocity and the reflection round-trip travel time.

5. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that: When the processor executes the program, the shear wave static correction method based on shallow stacking modeling as described in any one of claims 1 to 2 is implemented.

6. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the shear wave static correction method based on shallow stack modeling as described in any one of claims 1 to 2 is implemented.

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