Substrate bonding apparatus and method of manufacturing semiconductor devices using the same

Abstract

The present inventive concepts provide a substrate bonding apparatus and a method of manufacturing a semiconductor device by using the substrate bonding apparatus. The substrate bonding apparatus includes a first bonding chuck configured to support a first substrate, and a second bonding chuck configured to support a second substrate so that the second substrate faces the first substrate. The first bonding chuck includes a first base, a first deformable plate on the first base configured to support the first substrate and configured to deform so that a distance between the first base and the first deformable plate varies, and a first piezoelectric sheet on the first deformable plate and configured to deform to deform the first deformable plate in response to an electric power applied thereto.

Description

Technical Field

[0001] The present invention relates to a substrate bonding apparatus and a method for manufacturing semiconductor devices using the substrate bonding apparatus. Background Technology

[0002] In the manufacturing of semiconductor devices, substrate bonding processes can be performed to join two or more substrates. Substrate bonding processes can be performed by increasing the mounting density of semiconductor chips in the semiconductor device. For example, semiconductor modules with a structure in which semiconductor chips are stacked can be used to increase the mounting density of semiconductor chips, shorten the wiring length between semiconductor chips, and facilitate high-speed signal processing. In the case of manufacturing semiconductor modules with a stacked semiconductor chip structure, bonding can be performed at the wafer level rather than at the chip level, and then the bonded wafers can be diced among multiple stacked semiconductor chips, thereby increasing productivity. Substrate bonding processes can also be performed as wafer-to-wafer processes that directly bond two wafers without the use of an adhesive medium. Wafer-to-wafer processes can be performed using bonding devices that include a bonding chuck for supporting the wafer and elements for applying pressure to the wafer. Summary of the Invention

[0003] The present invention provides a substrate bonding apparatus and a method for manufacturing semiconductor devices using the substrate bonding apparatus.

[0004] According to one aspect of the present invention, a substrate bonding apparatus is provided, comprising a first bonding chuck configured to support a first substrate and a second bonding chuck configured to support a second substrate such that the second substrate faces the first substrate. The first bonding chuck comprises: a first base; a first deformable plate on the first base and configured to support the first substrate, the first deformable plate being configured to deform such that the distance between the first base and the first deformable plate changes; and a first piezoelectric sheet on the first deformable plate and configured to deform in response to an applied electric current, thereby deforming the first deformable plate.

[0005] According to another aspect of the present invention, a substrate bonding apparatus is provided, comprising: a first bonding chuck including a first deformable plate configured to deform the first substrate while supporting it, and a plurality of first displacement sensors configured to sense displacements of different portions of the first deformable plate; a second bonding chuck configured to support a second substrate such that the second substrate faces the first substrate; and a controller configured to control the deformation of the first deformable plate, wherein the first bonding chuck is configured to initially deform the first deformable plate into a convex shape relative to the second bonding chuck, and the controller is configured to generate a feedback deformation control signal for secondary deformation of the first deformable plate based on the displacements of the initially deformed first deformable plate sensed by the plurality of first displacement sensors.

[0006] According to another aspect of the present invention, a substrate bonding apparatus is provided, comprising: a first bonding chuck including a first deformable plate configured to deform the first substrate while supporting it, and a plurality of first displacement sensors configured to sense displacements of different portions of the first deformable plate; a second bonding chuck including a second deformable plate configured to deform the second substrate while supporting it, and a plurality of second displacement sensors configured to sense displacements of different portions of the second deformable plate, the second bonding chuck being on the first bonding chuck; and a controller configured to control the deformation of the first deformable plate and the deformation of the second deformable plate, wherein the first bonding chuck is configured to initially deform the first deformable plate into an upwardly convex shape, the second bonding chuck is configured to initially deform the second deformable plate into a downwardly convex shape, and the controller is configured to generate a feedback deformation control signal for causing each of the first and second deformable plates to undergo secondary deformation based on the displacements of the initially deformed first deformable plate sensed by the plurality of first displacement sensors and the displacements of the initially deformed second deformable plate sensed by the plurality of second displacement sensors.

[0007] According to another aspect of the present invention, a method for manufacturing a semiconductor device is provided, the method comprising: aligning a second bonding chuck and a first bonding chuck, wherein a second substrate is disposed on the second bonding chuck, the first bonding chuck including a first deformable plate supporting the first substrate; initially deforming the first deformable plate to initially deform the first substrate; sensing displacements of different portions of the initially deformed first deformable plate using a plurality of first displacement sensors; second deforming the first deformable plate based on the displacements sensed by the plurality of first displacement sensors to second deform the first substrate; and bonding a second substrate to the second-deformed first substrate. Attached Figure Description

[0008] The embodiments of the present invention will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:

[0009] Figure 1 This is a cross-sectional view showing a substrate bonding device according to an embodiment;

[0010] Figure 2 This is a flowchart illustrating a substrate bonding method according to an embodiment;

[0011] Figures 3A to 3F These are cross-sectional views showing the substrate bonding method according to the embodiments;

[0012] Figure 4 This is a flowchart illustrating a method for deforming a first deformable plate according to an embodiment;

[0013] Figures 5A to 5F These are cross-sectional views showing the substrate bonding method according to the embodiments;

[0014] Figure 6 This is a flowchart illustrating a method for deforming a first deformable plate and a second deformable plate according to an embodiment;

[0015] Figure 7 This is a cross-sectional view showing the first engagement chuck according to an embodiment;

[0016] Figure 8A and Figure 8B This is a cross-sectional view showing the first engagement chuck according to an embodiment;

[0017] Figure 9 This is a flowchart illustrating a method for manufacturing a semiconductor device according to an embodiment; and

[0018] Figure 10A and Figure 10B It is a cross-sectional view showing the process of bonding the first substrate to the second substrate in sequence. Detailed Implementation

[0019] In the following description, embodiments will be described in detail with reference to the accompanying drawings. The same reference numerals refer to the same elements, and for the sake of brevity, repeated descriptions of them may be omitted.

[0020] Figure 1 This is a cross-sectional view showing the substrate bonding device 10 according to an embodiment.

[0021] Reference Figure 1 The substrate bonding device 10 may include a first bonding chuck 100, a second bonding chuck 200, a controller 300, and a chamber 11 for accommodating the first bonding chuck 100 and the second bonding chuck 200.

[0022] A first engagement chuck 100 may support a first substrate S1. In one embodiment, the first engagement chuck 100 may be configured to hold (or hold) the first substrate S1 using vacuum pressure. For example, the first engagement chuck 100 may include a first vacuum pump 190. The first vacuum pump 190 may provide vacuum pressure in a first vacuum groove 130 provided in the first engagement chuck 100 at a portion in which the first substrate S1 is placed. When vacuum pressure is generated in the first vacuum groove 130 by the first vacuum pump 190, the first substrate S1 may be vacuum-attracted to or held onto the first engagement chuck 100 by vacuum pressure. Alternatively, in another embodiment, the first engagement chuck 100 may be configured to support the first substrate S1 by electrostatic force. When the first engagement chuck 100 is configured to support the first substrate S1 by electrostatic force, the first engagement chuck 100 may include electrodes that are powered to generate an electrostatic force for holding the first substrate S1.

[0023] The second engagement chuck 200 may be disposed opposite to the first engagement chuck 100 and may support the second substrate S2. In an embodiment, the second engagement chuck 200 may be configured to hold (or fix) the second substrate S2 by using vacuum pressure. For example, the second engagement chuck 200 may include a second vacuum pump 290. The second vacuum pump 290 may provide vacuum pressure in a second vacuum groove 230 provided in the second engagement chuck 200 at the portion in which the second substrate S2 is placed. When vacuum pressure is generated in the second vacuum groove 230 by the second vacuum pump 290, the second substrate S2 may be vacuum-adsorbed or held onto the second engagement chuck 200 by vacuum pressure. Alternatively, in other embodiments, the second engagement chuck 200 may be configured to support the second substrate S2 by electrostatic force.

[0024] In this configuration, the first engagement chuck 100 may be a lower engagement chuck, and the second engagement chuck 200 may be an upper engagement chuck disposed above or on the first engagement chuck 100. However, this embodiment is not limited thereto. The second engagement chuck 200 may be a lower engagement chuck, and the first engagement chuck 100 may be an upper engagement chuck disposed above or on the second engagement chuck 200.

[0025] In an embodiment, the first engagement chuck 100 may include a first base 110, a first deformable plate 120 disposed on the first base 110, a first vacuum pump 190, a first pneumatic controller 150, and a plurality of first displacement sensors 140.

[0026] The first deformable plate 120 may include a first vacuum groove 130 in which vacuum pressure is generated. A first vacuum pump 190 may apply vacuum pressure to the first vacuum groove 130 such that the first substrate S1 is vacuum-adsorbed onto a surface of the first deformable plate 120, or may release the vacuum pressure of the first vacuum groove 130 such that the vacuum adsorption or vacuum adhesion of the first substrate S1 is released. The first vacuum groove 130 may include a plurality of vacuum grooves disposed between the central and peripheral or outer portions of the first deformable plate 120, and the first vacuum pump 190 may be configured to individually control the vacuum pressure provided in each of the plurality of vacuum grooves.

[0027] A first deformable plate 120 can be disposed on a first base 110. The first deformable plate 120 can be deformed, causing the distance between the first base 110 and the first deformable plate 120 to change. For example, the outer periphery of the first deformable plate 120 can be fixed to the first base 110, and the inner portion of the first deformable plate 120 can be deformed by protrusion through external force. The first deformable plate 120 can deform while supporting the first substrate S1, thus forcibly deforming the first substrate S1. At this time, the curvature of the forcibly deformed first substrate S1 can be adjusted based on the curvature of the first deformable plate 120.

[0028] In some embodiments, the first deformable plate 120 may comprise metal, ceramic, rubber, or a combination thereof. For example, the first deformable plate 120 may comprise aluminum (Al) or silicon carbide (SiC).

[0029] The first pneumatic controller 150 can control the pressure supplied to or limited in the first cavity 121 between the first base 110 and the first deformable plate 120, so as to deform the first deformable plate 120. The first pneumatic controller 150 can (e.g., using a pump) inject air into the first cavity 121 to increase the pressure in the first cavity 121, or it can expel air from the first cavity 121 to decrease the pressure in the first cavity 121. When the pressure in the first cavity 121 is increased by the first pneumatic controller 150, the first deformable plate 120 can deform to increase its curvature, and the first substrate S1 supported by the first deformable plate 120 can deform to increase its curvature. Furthermore, when the pressure in the first cavity 121 is decreased by the first pneumatic controller 150, the first deformable plate 120 can deform to decrease its curvature, and the first substrate S1 supported by the first deformable plate 120 can deform to decrease its curvature.

[0030] Multiple first displacement sensors 140 can sense the displacement of the first deformable plate 120. The multiple first displacement sensors 140 can be mounted on the first base 110. The multiple first displacement sensors 140 can be configured to sense the vertical distance between different portions of the first deformable plate 120 and the first base 110.

[0031] For example, the first displacement sensor 140 may include a laser-type displacement sensor, an eddy current-type displacement sensor, a capacitive displacement sensor, and an ultrasonic displacement sensor.

[0032] In an embodiment, the second engagement chuck 200 may include a second base 210 and a pressure pin 215.

[0033] A second vacuum chamber 230 for generating vacuum pressure may be provided in the second base 210. A second vacuum pump 290 may apply vacuum pressure to the second vacuum chamber 230 to cause the second substrate S2 to be vacuum-adsorbed or held to a surface of the second base 210 by vacuum pressure, or may release the vacuum pressure of the second vacuum chamber 230 to release the vacuum adsorption of the second substrate S2. The second vacuum chamber 230 may include a plurality of vacuum chambers disposed between the center and the outer periphery of the second base 210, and the second vacuum pump 290 may be configured to individually control the vacuum pressure provided in each of the plurality of vacuum chambers.

[0034] The pressure pin 215 may be disposed at the center of the second base 210 for vertical mobility. The pressure pin 215 may be configured to perform reciprocating movement in a direction substantially perpendicular to the second substrate S2 (e.g., the Z direction). The pressure pin 215 may include an actuator for achieving the reciprocating movement. For example, the actuator of the pressure pin 215 may include a multilayer piezoelectric actuator, a voice coil motor, and a rack and pinion gear coupled to the motor.

[0035] The controller 300 can be configured to overall control the bonding process performed on the first substrate S1 and the second substrate S2 using the substrate bonding apparatus 10. For example, the controller 300 can be configured to control the operation of the first bonding chuck 100 and the second bonding chuck 200, and to control the chuck actuator 350, which controls the movement of the first bonding chuck 100 and the second bonding chuck 200 (e.g., the movement of the first bonding chuck 100 and the second bonding chuck 200 relative to each other). In one embodiment, the controller 300 can be configured to control the bonding process performed on the first substrate S1 and the second substrate S2 based on the displacement of the first deformable plate 120 sensed by a plurality of first displacement sensors 140.

[0036] Controller 300 can be implemented using hardware, firmware, software, or a combination thereof. For example, controller 300 can be a computing device such as a workstation computer, desktop computer, laptop computer, or tablet computer. Controller 300 may include a single-loop controller, microprocessor, central processing unit (CPU), graphics processing unit (GPU), or processor configured with software, dedicated hardware, or firmware. Controller 300 can be implemented using, for example, a general-purpose computer or dedicated hardware such as a digital signal processor (DSP), field-programmable gate array (FPGA), or application-specific integrated circuit (ASIC).

[0037] In some implementations, the controller 300 may be operated using instructions that are read by one or more processors and stored in a machine-readable medium. Here, the machine-readable medium may include mechanisms for storing and / or transmitting information readable by a machine (e.g., a computing device). For example, the machine-readable medium may include read-only memory (ROM), random access memory (RAM), disk storage media, optical storage media, flash storage devices, electrical, optical, acoustic, or other types of radio signals (e.g., carrier waves, infrared signals, digital signals, etc.) and other signals.

[0038] The controller 300 can be implemented using firmware, software, routines, and instructions for performing the bonding process. For example, the controller 300 can be implemented using software that receives data for feedback, generates signals for performing the bonding process, and performs arithmetic operations.

[0039] The chamber 11 may surround the first bonding chuck 100 and the second bonding chuck 200. The chamber 11 may provide internal space for performing bonding processes on the first substrate S1 and the second substrate S2. In an embodiment, a vacuum pressure or atmospheric pressure may be generated or maintained within the internal space of the chamber 11.

[0040] The chamber 11 may include an opening or an opening portion 12. The first substrate S1 and the second substrate S2 can be loaded into or unloaded from the internal space of the chamber 11 through the opening portion 12. To protect the internal space of the chamber 11 from the influence of the external environment, the opening portion 12 may be closed or sealed.

[0041] Figure 2 This is a flowchart illustrating a substrate bonding method according to an embodiment. Figures 3A to 3F This is a cross-sectional view showing the substrate bonding method in sequence according to the embodiment. In the following text, reference will be made to... Figure 2 and Figures 3A to 3F A detailed description of a substrate bonding method using a substrate bonding apparatus according to an embodiment.

[0042] Reference Figure 2 and Figure 3A In operation S110, the second engagement chuck 200 on which the second substrate S2 is disposed can be aligned with the first engagement chuck 100 on which the first substrate S1 is disposed.

[0043] In operation S110, a first substrate S1 can be mounted on a first bonding chuck 100 such that the non-active surface of the first substrate S1 contacts the first bonding chuck 100, and a second substrate S2 can be mounted on a second bonding chuck 200 such that the non-active surface of the second substrate S2 contacts the second bonding chuck 200. The second bonding surface of the second substrate S2 mounted on the second bonding chuck 200 can face the first bonding surface of the first substrate S1 mounted on the first bonding chuck 100.

[0044] The first bonding chuck 100 can generate vacuum pressure in each of the first central vacuum groove 131, the first intermediate vacuum groove 133, and the first outer vacuum groove 135 to support the first substrate S1. The first central vacuum groove 131 is used to vacuum-adsorb or hold the central region of the first substrate S1 with vacuum pressure. The first intermediate vacuum groove 133 is used to vacuum-adsorb or hold the intermediate region of the first substrate S1 between the central region and the outer region with vacuum pressure. The first outer vacuum groove 135 is used to vacuum-adsorb or hold the outer region of the first substrate S1 with vacuum pressure. Furthermore, the second bonding chuck 200 can generate vacuum pressure in each of the second central vacuum groove 231, the second intermediate vacuum groove 233, and the second outer vacuum groove 235 to support the second substrate S2. The second central vacuum groove 231 is used to vacuum-adsorb the central region of the second substrate S2. The second intermediate vacuum groove 233 is used to vacuum-adsorb the intermediate region of the second substrate S2 between the central region and the outer region with vacuum pressure. The second outer vacuum groove 235 is used to vacuum-adsorb the outer region of the second substrate S2.

[0045] In operation S110, the first engagement chuck 100 and the second engagement chuck 200 can be aligned in the vertical direction (e.g., the Z direction). To align the first engagement chuck 100 and the second engagement chuck 200, at least one selected from the first engagement chuck 100 and the second engagement chuck 200 can be moved in the horizontal direction (e.g., the X direction and / or the Y direction) and can be rotated relative to the vertical direction (e.g., the Z direction).

[0046] Reference Figure 2 and Figure 3B The first engagement chuck 100 and the second engagement chuck 200 can be aligned, and then, in operation S120, the first deformable plate 120 of the first engagement chuck 100 can be deformed.

[0047] In operation S120, the first deformable plate 120 can deform while supporting the first substrate S1, thus forcibly deforming the first substrate S1 supported on one surface of the first deformable plate 120. For example, the first deformable plate 120 can deform in an upward convex direction while vacuum adsorbing the first substrate S1 or holding the first substrate S1 under vacuum pressure, and the first substrate S1 can be forcibly deformed in an upward convex direction depending on the deformation level of the first deformable plate 120. In this case, the first substrate S1 can be forcibly deformed while adhering to the first deformable plate 120, so the forcibly deformed first substrate S1 can have a curvature corresponding to the curvature of one surface of the first deformable plate 120.

[0048] In an embodiment, the deformation of the first deformable plate 120 may include the following operations: initially deforming the first deformable plate 120 into a convex shape; and secondarily deforming the first deformable plate 120 based on the displacement of the first deformable plate 120 sensed by the plurality of first displacement sensors 140 during the initial deformation. The second deformation of the first deformable plate 120 may be an operation of locally correcting the amount of deformation of the first deformable plate 120 based on the displacement of the first deformable plate 120 sensed by the plurality of first displacement sensors 140 during the initial deformation.

[0049] When the deformation of the first deformable plate 120 is completed, in operation S130, the bonding between the first substrate S1 and the second substrate S2 can be performed. In an embodiment, the bonding between the first substrate S1 and the second substrate S2 may include an operation (S131) ​​in which the first substrate S1 contacts the second substrate S2 at a contact point between the first substrate S1 and the second substrate S2, an operation (S133) in which the bonding area between the first substrate S1 and the second substrate S2 is expanded, and an operation (S135) in which the outer region of the first substrate S1 is bonded to the outer region of the second substrate S2.

[0050] Reference Figure 2 and Figure 3CIn operation S131, the second engagement chuck 200 can release the vacuum pressure corresponding to the second central vacuum groove 231, and can maintain the vacuum pressure corresponding to each of the second intermediate vacuum groove 233 and the second outer vacuum groove 235. With the vacuum adsorption or vacuum adhesion in the central region of the second substrate S2 released, the pressure pin 215 can push the center of the second substrate S2 and apply pressure to the center of the second substrate S2. Therefore, the central region of the second substrate S2 pressurized by the pressure pin 215 can protrude and deform, and can contact the contact point between the first substrate S1 and the second substrate S2. This contact point can be defined as the engagement initiation point, from which the engagement performed on the first substrate S1 and the second substrate S2 begins. For example, the engagement initiation point could be the point where the center of the first engagement surface of the first substrate S1 contacts the center of the second engagement surface of the second substrate S2.

[0051] Reference Figure 2 and Figure 3D In operation S133, the vacuum adsorption or vacuum adhesion of the second substrate S2 can be gradually released in the direction from the center of the second substrate S2 to the outer region of the second substrate S2, thereby allowing the bonding area to expand between the first substrate S1 and the second substrate S2. When the second bonding chuck 200 releases the vacuum pressure applied to the second intermediate vacuum groove 233, the bonding between the first substrate S1 and the second substrate S2 can be performed spontaneously without applying another external force. Based on the spontaneous bonding expansion between the first substrate S1 and the second substrate S2, the central and intermediate regions of the first substrate S1 can be bonded to the central and intermediate regions of the second substrate S2.

[0052] In this embodiment, each of the first bonding surface of the first substrate S1 and the second bonding surface of the second substrate S2 may include a plasma-treated or wet-treated surface. For example, each of the first bonding surface of the first substrate S1 and the second bonding surface of the second substrate S2 may have -OH functional groups, so that during the bonding between the first substrate S1 and the second substrate S2, the -OH functional groups of the first bonding surface of the first substrate S1 may spontaneously bond to the -OH functional groups of the second bonding surface of the second substrate S2 via hydrogen bonds.

[0053] In operation S133, when the bonding between the first substrate S1 and the second substrate S2 expands, the chuck actuator 350 can reduce the distance 301 between the first bonding chuck 100 and the second bonding chuck 200 to flatten the central region of the first deformable plate 120 surrounded by the first central vacuum groove 131, and to flatten the intermediate region of the first deformable plate 120 between the first central vacuum groove 131 and the first intermediate vacuum groove 133. In this case, the first pneumatic controller 150 can reduce the pressure of the first cavity 121 to help flatten the central and intermediate regions of the first deformable plate 120. As the central and intermediate regions of the first deformable plate 120 flatten, the first bonding surface of the first substrate S1 can be flatly bonded to the second bonding surface of the second substrate S2.

[0054] When the bonding between the first substrate S1 and the second substrate S2 expands, the controller 300 can determine whether the deformation of the first deformable plate 120 is properly performed based on the displacement sensed by the plurality of first displacement sensors 140. For example, the controller 300 can determine whether the central region and intermediate region of the first deformable plate 120 are deformed into a flat state based on the displacement sensed by the plurality of first displacement sensors 140. For example, when it is determined that the deformation of the first deformable plate 120 is not properly performed, the controller 300 can apply a feedback position control signal FPCS generated based on the displacement sensed by the plurality of first displacement sensors 140 to the chuck actuator 350, and the chuck actuator 350 can adjust the distance 301 between the first engagement chuck 100 and the second engagement chuck 200 according to the feedback position control signal FPCS.

[0055] In one implementation, the controller 300 can determine whether the displacement sensed by the first sub-displacement sensor 141 at the center of the first deformable plate 120 matches the displacement sensed by the second sub-displacement sensor 142 in the middle region of the first deformable plate 120. When the displacement at the center of the first deformable plate 120 differs from the displacement in the middle region of the first deformable plate 120, the controller 300 can apply a feedback position control signal FPCS to the chuck actuator 350, and the chuck actuator 350 can adjust the distance 301 between the first engagement chuck 100 and the second engagement chuck 200 until the displacement at the center of the first deformable plate 120 matches the displacement in the middle region of the first deformable plate 120.

[0056] In one embodiment, as the bonding area between the first substrate S1 and the second substrate S2 expands, the controller 300 can determine whether the displacement sensed by the first sub-displacement sensor 141 at the center of the first deformable plate 120 is within a predetermined reference range. In this case, when the displacement sensed by the first sub-displacement sensor 141 at the center of the first deformable plate 120 is outside the predetermined reference range, the controller 300 can apply a feedback position control signal FPCS to the chuck actuator 350, and the chuck actuator 350 can adjust the distance 301 between the first engagement chuck 100 and the second engagement chuck 200 until the displacement at the center of the first deformable plate 120 is adjusted to the predetermined reference range.

[0057] Reference Figure 2 and Figure 3E In operation S135, when the second engagement chuck 200 releases the vacuum pressure applied to the second outer vacuum groove 235 and the first engagement chuck 100 releases the vacuum pressure applied to the first outer vacuum groove 135, the engagement between the outer regions of the first substrate S1 and the outer regions of the second substrate S2 can be performed spontaneously without applying another external force. When the engagement between the outer regions of the first substrate S1 and the outer regions of the second substrate S2 is completed, a bonding substrate BS can be formed in which the first engagement surface of the first substrate S1 is bonded to the second engagement surface of the second substrate S2.

[0058] Reference Figure 2 and Figure 3F When the bonding between the first substrate S1 and the second substrate S2 is completed, the bonded substrate BS can be unloaded in operation S140. In order to unload the bonded substrate BS, the second bonding chuck 200 can move away from the first bonding chuck 100, and the first bonding chuck 100 can completely release the vacuum adsorption or vacuum adhesion of the bonded substrate BS.

[0059] Figure 4 This is a flowchart illustrating a method for deforming the first deformable plate 120 according to an embodiment. In the following text, reference will be made to... Figure 3B and Figure 4 A more detailed description Figure 2 Operation S120.

[0060] First, in operation S121, the first deformable plate 120 can initially deform into a shape with an upward convexity. For example, the first engagement chuck 100 can inject air into the first cavity 121 using the first pneumatic controller 150. As the pressure in the first cavity 121 increases, the first deformable plate 120 and the first substrate S1 supported by the first deformable plate 120 can deform in an upward convex direction.

[0061] Subsequently, in operation S122, multiple first displacement sensors 140 can sense the displacement at various positions of the first deformable plate 120 during its initial deformation. These multiple first displacement sensors can be positioned at different locations on the XY plane and can measure the Z-direction displacement of different portions of the first deformable plate 120. The displacement of the first deformable plate 120 at various positions on the XY coordinate system can be obtained based on the displacement sensed by the multiple first displacement sensors 140.

[0062] For example, the plurality of first displacement sensors 140 may include: a first sub-displacement sensor 141 for sensing the displacement of the center of the first deformable plate 120; a second sub-displacement sensor 142 and a third sub-displacement sensor 143 for sensing the displacement between the center and the outer region of the first deformable plate 120; and a fourth sub-displacement sensor 144 and a fifth sub-displacement sensor 145 for sensing the displacement of the outer region of the first deformable plate 120. The first sub-displacement sensors 141 to the fifth sub-displacement sensors 145 can send a first displacement signal DS1, a second displacement signal DS2, a third displacement signal DS3, a fourth displacement signal DS4, and a fifth displacement signal DS5 to the controller 300, and the controller 300 can obtain displacement data at various positions of the first deformable plate 120 based on the first displacement signals DS1 to the fifth displacement signals DS5.

[0063] Subsequently, in operation S123, the controller 300 can determine whether each of the displacements sensed by the plurality of first displacement sensors 140 at various positions of the first deformable plate 120 is within a predetermined reference range. That is, the controller 300 can perform the following operations: receive the displacements sensed by the plurality of first displacement sensors 140 of the first deformable plate 120 during initial deformation; and determine whether each of the sensed displacements of the first deformable plate 120 during initial deformation is within a predetermined reference range. In this case, the amount of deformation of the first deformable plate 120 during initial deformation can vary based on the position of the first deformable plate 120, and therefore the reference range can be set differently based on the position of the first deformable plate 120.

[0064] When it is determined that each of the displacements sensed by the plurality of first displacement sensors 140 at various positions of the first deformable plate 120 is within a predetermined reference range, the operation of joining the first substrate S1 and the second substrate S2 (S130) can be performed.

[0065] Alternatively, when it is determined that at least one of the displacements sensed by the plurality of first displacement sensors 140 at various locations of the first deformable plate 120 is outside a predetermined reference range, an operation (S124) for locally correcting the deformation of the first deformable plate 120 can then be performed. When the deformation of the first deformable plate 120 is locally corrected by operation S124, operations S122 and S123 can be performed again.

[0066] Operation S124 can sequentially perform the following operations: detect the position where the displacement of the first deformable plate 120 during its initial deformation is outside the reference range; calculate the amount of deformation required to adjust the displacement of the first deformable plate 120 to within the reference range at the detected position; and perform local deformation of the first deformable plate 120 at the detected position based on the calculated deformation amount. The following will refer to... Figure 7 or Figure 8A and Figure 8B Describe operation S124 in detail.

[0067] According to the embodiment, the deformation state of the first deformable plate 120 can be monitored by using multiple first displacement sensors 140, and the deformation of the first deformable plate 120 can be controlled by feedback, thereby uniformly managing the deformation of the first deformable plate 120 and the deformation of the first substrate S1 caused by the first deformable plate 120. A bonding process can be performed on the two substrates in which the first substrate S1 is deformed into a predetermined shape or in a desired deformed state, thus improving the reliability of the substrate bonding process.

[0068] Figures 5A to 5F This is a cross-sectional view showing the substrate bonding method according to the embodiment. In the following text, reference will be made to... Figures 5A to 5F A substrate bonding method using a substrate bonding apparatus according to an embodiment is described in detail. Except for the configuration of the second bonding chuck 200a, Figures 5A to 5F The substrate bonding device shown can be used with Figures 3A to 3F The substrate bonding devices shown are basically the same or similar. For ease of description and for brevity, descriptions that are the same or similar to those described above can be omitted.

[0069] Reference Figure 5A The second engagement chuck 200a, on which the second substrate S2 is disposed, can be aligned with or aligned with the first engagement chuck 100, on which the first substrate S1 is disposed.

[0070] The first engagement chuck 200a may include a second base 210, a second deformable plate 220 disposed on the second base 210, and a plurality of second displacement sensors.

[0071] The second deformable plate 220 can support the second substrate S2. A plurality of second vacuum grooves 230 for generating vacuum pressure can be provided in the second deformable plate 220. The second engagement chuck 200a can generate vacuum pressure in each of the second central vacuum groove 231, the second intermediate vacuum groove 233, and the second outer vacuum groove 235 to support the second substrate S2. The second central vacuum groove 231 corresponds to the central region of the second substrate S2, the second intermediate vacuum groove 233 corresponds to the middle region of the second substrate S2, and the second outer vacuum groove 235 corresponds to the outer region of the second substrate S2.

[0072] The outer periphery of the second deformable plate 220 can be fixed to the second base 210, and the inner portion of the second deformable plate 220 can be deformed by external force. The second deformable plate 220 can deform while supporting the second substrate S2, thus forcibly deforming the second substrate S2. At this time, the curvature of the forcibly deformed second substrate S2 can be adjusted based on the curvature of the second deformable plate 220.

[0073] The second engagement chuck 200a can control the pressure supplied to the second cavity 221 between the second base 210 and the second deformable plate 220 to deform the second deformable plate 220. For example, the second engagement chuck 200a can be used with a second pneumatic controller ( Figure 5B The second pneumatic controller is configured to inject air into or exhaust air from the second cavity 221.

[0074] A sealing material or sealing member 217 for preventing external air from penetrating into the second cavity 221 may be disposed between the second deformable plate 220 and the second base 210. The sealing material 217 can separate or seal the second cavity 221 from the orifice of the second base 210 that accommodates the pressure pin 215. The sealing material 217 may have a cylindrical shape and include a path through which the pressure pin 215 can pass. One end of the sealing material 217 may be fixed to the second base 210, and the other end of the sealing material 217 may be fixed to the second deformable plate 220. The sealing material 217 may be configured to shorten or lengthen in the vertical direction according to the deformation level of the second deformable plate 220.

[0075] The plurality of second displacement sensors can sense the displacement of the second deformable plate 220. The plurality of second displacement sensors can be mounted on the second base 210. The plurality of second displacement sensors can be configured to sense the vertical distance between different portions of the second deformable plate 220 and the second base 210. For example, the second displacement sensors may include laser-type displacement sensors, eddy current-type displacement sensors, capacitive displacement sensors, and ultrasonic displacement sensors.

[0076] For example, the plurality of second displacement sensors may include: a sixth sub-displacement sensor (not shown) for sensing the displacement of the center of the second deformable plate 220; a seventh sub-displacement sensor 242 and an eighth sub-displacement sensor 243 for sensing the displacement between the center and the outer region of the second deformable plate 220; and a ninth sub-displacement sensor 244 and a tenth sub-displacement sensor 245 for sensing the displacement of the outer region of the second deformable plate 220. The sixth sub-displacement sensor may be configured to correspond to (e.g., aligned with) the first sub-displacement sensor 141, the seventh sub-displacement sensor 242 and the eighth sub-displacement sensor 243 may be configured to correspond to (e.g., aligned with) the second sub-displacement sensor 142 and the third sub-displacement sensor 143, respectively, and the ninth sub-displacement sensor 244 and the tenth sub-displacement sensor 245 may be configured to correspond to (e.g., aligned with) the fourth sub-displacement sensor 144 and the fifth sub-displacement sensor 145, respectively. The plurality of second displacement sensors can send the sixth displacement signal DS6, the seventh displacement signal DS7, the eighth displacement signal DS8, the ninth displacement signal DS9, and the tenth displacement signal DS10 to the controller 300, and the controller 300 can obtain displacement data at each position of the second deformable plate 220 based on the sixth displacement signal DS6 to the tenth displacement signal DS10.

[0077] Reference Figure 5B The first engagement chuck 100 and the second engagement chuck 200a can be aligned, and then the first deformable plate 120 of the first engagement chuck 100 and the second deformable plate 220 of the second engagement chuck 200a can be deformed. Specifically, the first deformable plate 120 can deform in an upward direction while supporting the first substrate S1, so the first substrate S1 can be forcibly deformed in an upward direction according to the deformation level of the first deformable plate 120. The second deformable plate 220 can deform in a downward direction while supporting the second substrate S2, and the second substrate S2 can deform in a downward direction according to the deformation level of the second deformable plate 220. In an embodiment, the first deformable plate 120 and the second deformable plate 220 can be deformed to have a symmetrical shape.

[0078] In one embodiment, the deformation of the first deformable plate 120 may include the following operations: initially deforming the first deformable plate 120c into a convex shape; and secondarily deforming the first deformable plate 120 based on the displacement of the first deformable plate 120 sensed by the plurality of first displacement sensors. Furthermore, the deformation of the second deformable plate 220 may include the following operations: initially deforming the second deformable plate 220 into a convex shape; and secondarily deforming the second deformable plate 220 based on the displacement of the second deformable plate 220 sensed by the plurality of second displacement sensors.

[0079] The controller 300 can control the secondary deformation of the first deformable plate 120 and the secondary deformation of the second deformable plate 220. The controller 300 can be configured to generate a feedback deformation control signal FDCS1 for correcting the deformation amount of the first deformable plate 120 based on the displacement of the first deformable plate 120 sensed by the plurality of first displacement sensors during its initial deformation, and apply the generated feedback deformation control signal FDCS1 to the first engagement chuck 100. Furthermore, the controller 300 can be configured to generate a feedback deformation control signal FDCS2 for correcting the deformation amount of the second deformable plate 220 based on the displacement of the second deformable plate 220 sensed by the plurality of second displacement sensors during its initial deformation, and apply the generated feedback deformation control signal FDCS2 to the second engagement chuck 200a.

[0080] Reference Figure 5C When the deformation of each of the first deformable plate 120 and the second deformable plate 220 is completed, the second engagement chuck 200a can be lowered by a certain distance and can push the center of the second substrate S2 toward the first substrate S1 and apply pressure to the center of the second substrate S2 by using the pressure pin 215. In the state where the vacuum adsorption or vacuum adhesion in the central region of the second substrate S2 is released, the pressure pin 215 can push the center of the second substrate S2 and apply pressure to the center of the second substrate S2, so that the center of the second substrate S2 can contact the first substrate S1 at a contact point between the first substrate S1 and the second substrate S2.

[0081] Reference Figure 5D When the first substrate S1 contacts the second substrate S2 at a contact point between the first substrate S1 and the second substrate S2, the bonding area between the first substrate S1 and the second substrate S2 can be extended. For example, the vacuum adsorption or vacuum adhesion of the second substrate S2 can be gradually released in the direction from the center to the outer region of the second substrate S2, and the first bonding chuck 100 can gradually release the vacuum adsorption or vacuum adhesion of the first substrate S1 in the direction from the center to the outer region of the first substrate S1, thereby allowing the bonding area between the first substrate S1 and the second substrate S2 to gradually expand.

[0082] When the bonding between the first substrate S1 and the second substrate S2 expands, the chuck actuator 350 can reduce the distance 302 between the first bonding chuck 100 and the second bonding chuck 200a to flatten the central and intermediate regions of the first deformable plate 120 and the second deformable plate 220. In this case, the first pneumatic controller 150 and the second pneumatic controller 250 can respectively reduce the pressure of the first cavity 121 and the second cavity 221 to help flatten the central and intermediate regions of the first deformable plate 120 and the second deformable plate 220. As the central and intermediate regions of the first deformable plate 120 and the second deformable plate 220 flatten, the first bonding surface of the first substrate S1 can be flatly bonded to the second bonding surface of the second substrate S2.

[0083] When the bonding between the first substrate S1 and the second substrate S2 expands, the controller 300 can determine whether the deformation of the first deformable plate 120 and the deformation of the second deformable plate 220 are properly performed based on the displacement signals DS1 to DS5 sensed by the plurality of first displacement sensors and the displacement signals DS6 to DS10 sensed by the plurality of second displacement sensors. For example, the controller 300 can determine whether the central and intermediate regions of the first deformable plate 120 are deformed into a flat state based on the displacement sensed by the plurality of first displacement sensors, and determine whether the central and intermediate regions of the second deformable plate 220 are deformed into a flat state based on the displacement sensed by the plurality of second displacement sensors. For example, when it is determined that the deformation of the first deformable plate 120 and the deformation of the second deformable plate 220 are not properly performed, the controller 300 can generate a feedback position control signal FPCS based on the displacement of the first deformable plate 120 sensed by the plurality of first displacement sensors and the displacement of the second deformable plate 220 sensed by the plurality of second displacement sensors, and can apply the generated feedback position control signal FPCS to the chuck actuator 350. The chuck actuator 350 can adjust the distance 302 between the first engagement chuck 100 and the second engagement chuck 200a according to the feedback position control signal FPCS.

[0084] Reference Figure 5EThe outer region of the first substrate S1 can be bonded to the outer region of the second substrate S2. The first bonding chuck 100 can vacuum-adsorb or vacuum-hold the central and intermediate regions of the first substrate S1 where bonding is completed, and can release the vacuum adsorption or vacuum adhesion of the outer region of the first substrate S1. Furthermore, the second bonding chuck 200a can vacuum-adsorb or vacuum-hold the central and intermediate regions of the second substrate S2 where bonding is completed, and can release the vacuum adsorption or vacuum adhesion of the outer region of the second substrate S2. When the vacuum adsorption or vacuum adhesion of the outer regions of the first substrate S1 and the second substrate S2 is released, the outer region of the first substrate S1 can spontaneously bond to the outer region of the second substrate S2.

[0085] Reference Figure 5F When the bonding between the first substrate S1 and the second substrate S2 is completed, the bonding substrate BS can be unloaded. In order to unload the bonding substrate BS, the first bonding chuck 100 and the second bonding chuck 200a can completely release the vacuum adsorption or vacuum adhesion of the bonding substrate BS, and the second bonding chuck 200a can move in a direction away from the first bonding chuck 100.

[0086] Figure 6 This is a flowchart illustrating a method for deforming the first deformable plate 120 and the second deformable plate 220 according to an embodiment. In the following text, reference will be made to... Figure 5B and Figure 6 The method of deforming the first deformable plate 120 and the second deformable plate 220 is described in more detail.

[0087] First, in operation S221, the first deformable plate 120 and the second deformable plate 220 can be initially deformed. For example, the first engagement chuck 100 or the first pneumatic controller 150 can inject air into the first cavity 121 provided between the first deformable plate 120 and the first base 110, causing the first deformable plate 120 to deform into an upward convex shape. Furthermore, the second engagement chuck 200a or the second pneumatic controller 250 can inject air into the second cavity 221 provided between the second deformable plate 220 and the second base 210, causing the second deformable plate 220 to deform into a downward convex shape.

[0088] Subsequently, in operation S222, the displacement of the first deformable plate 120 after initial deformation can be sensed using the plurality of first displacement sensors, and the displacement of the second deformable plate 220 after initial deformation can be sensed using the plurality of second displacement sensors. The displacement of the first deformable plate 120 at various positions based on the XY coordinates can be obtained based on the displacement of the first deformable plate 120 sensed by the plurality of first displacement sensors. Furthermore, the displacement of the second deformable plate 220 at various positions based on the XY coordinates can be obtained based on the displacement of the second deformable plate 220 sensed by the plurality of second displacement sensors.

[0089] Subsequently, in operation S223, it can be determined whether the displacement of the first deformable plate 120 is the same as the displacement of the second deformable plate 220. That is, the controller 300 can perform the following operations: receive displacement data of the first deformable plate 120 during initial deformation sensed by the plurality of first displacement sensors and displacement data of the second deformable plate 220 during initial deformation sensed by the plurality of second displacement sensors; and determine whether the displacement at each position of the first deformable plate 120 during initial deformation is the same as the displacement at the corresponding position (e.g., XY coordinate) of each position of the second deformable plate 220 during initial deformation.

[0090] When it is determined that the displacement at each position of the first deformable plate 120 is the same as the displacement at the corresponding position of each position of the second deformable plate 220, the bonding between the first substrate S1 and the second substrate S2 can be performed.

[0091] Alternatively, when it is determined that at least one of the displacements at various positions of the first deformable plate 120 is different from the displacement at the corresponding position of each position of the second deformable plate 220, an operation (S224) for locally correcting the deformation of the first deformable plate 120 and / or the second deformable plate 220 can then be performed. After the deformation of the first deformable plate 120 and / or the second deformable plate 220 has been locally corrected by operation S224, operations S222 and S223 can be performed again.

[0092] Operation S224 may perform the following operations in sequence: detect the position where the displacement of the first deformable plate 120, which is determined to be deformed for the first time, is different from the displacement of the second deformable plate 220, which is deformed for the first time; calculate the amount of deformation required to adjust the displacement of the first deformable plate 120 to be equal to the displacement of the second deformable plate 220 at the detected position; and deform the first deformable plate 120 and / or the second deformable plate 220 locally at the detected position based on the calculated amount of deformation.

[0093] Figure 7This is a cross-sectional view showing the first engagement chuck 100a according to an embodiment. Besides including the first piezoelectric piece 160, Figure 7 The first engagement chuck 100a shown can be used with Figures 3A to 3F The first engagement chuck 100 of the substrate engagement device shown is substantially the same as or similar to that described above. For ease of description and for brevity, descriptions that are the same as or similar to those described above may be omitted.

[0094] Reference Figure 7 The first engagement chuck 100a may include a first piezoelectric sheet 160 attached to or attached to the first deformable plate 120. The first piezoelectric sheet 160 may be disposed on a surface opposite to one surface of the first deformable plate 120 supporting the first substrate S1. When an electric current is applied to the first piezoelectric sheet 160, the portion of the first piezoelectric sheet 160 to which the current is supplied may locally deform due to the piezoelectric effect. For example, the first piezoelectric sheet 160 may locally contract or expand due to an externally applied electric current. Local deformation of the first piezoelectric sheet 160 may cause local deformation of the first deformable plate 120.

[0095] The first piezoelectric sheet 160 may include, for example, a plurality of piezoelectric elements 161. In this case, when an electric current is applied to some of the plurality of piezoelectric elements 161, the first deformable plate 120 may deform locally at or near some of the piezoelectric elements 161 to which the electric current is supplied. For example, when a first electric current (e.g., a positive (+) voltage) is applied to some of the plurality of piezoelectric elements 161 and thus a first portion of the first piezoelectric sheet 160 is locally contracted, a portion of the first deformable plate 120 near the first portion of the first piezoelectric sheet 160 may deform to increase curvature, thereby increasing the distance between a portion of the first deformable plate 120 and the first base 110. Furthermore, when a second electric current (e.g., a negative (-) voltage) opposite to the first electric current is applied to some of the plurality of piezoelectric elements 161 and thus a first portion of the first piezoelectric sheet 160 is locally expanded, a portion of the first deformable plate 120 near the first portion of the first piezoelectric sheet 160 may deform to decrease curvature, thereby decreasing the distance between a portion of the first deformable plate 120 and the first base 110.

[0096] In the following, a method for correcting the deformation of the first deformable plate 120 by using the first engagement chuck 100a according to an embodiment will be described.

[0097] First, the first engagement chuck 100a can vacuum-adsorb or vacuum-hold the first substrate S1 placed on the first deformable plate 120, and the pressure of the first cavity 121 can be increased by using the first pneumatic controller 150 to cause the first deformable plate 120 to initially deform into a convex shape. Subsequently, the controller 300 can perform the following operations: receive displacement data at various positions of the first deformable plate 120 during the initial deformation, transmitted from the plurality of first displacement sensors; and determine whether the displacement at each position of the first deformable plate 120 during the initial deformation is within a predetermined reference range.

[0098] In this case, when it is determined that at least one of the displacements sensed by the plurality of first displacement sensors at various positions of the first deformable plate 120 is outside a predetermined reference range, the controller 300 may perform feedback control to correct the deformation of the first deformable plate 120.

[0099] For example, the controller 300 can detect when the displacement of the first deformable plate 120 during its initial deformation is outside a reference range, calculate the amount of deformation required to correct the displacement of the first deformable plate 120 at the detected position, and apply a feedback deformation control signal FDCSA corresponding to the calculated deformation amount to the first engagement chuck 100a. The feedback deformation control signal FDCSA may have a voltage value corresponding to the calculated deformation amount. When the feedback deformation control signal FDCSA is applied to the first engagement chuck 100a, the power applied to the first engagement chuck 100a can be applied to the piezoelectric element 161 located at the detected position via the power line 125. The piezoelectric element 161, which is supplied with power, can contract or expand to locally deform the first deformable plate 120. When the displacement of the first deformable plate 120 is adjusted to a predetermined reference range at the detected position due to the local deformation of the first deformable plate 120, the deformation of the first deformable plate 120 can end, and the engagement between the first substrate S1 and the second substrate S2 can be performed.

[0100] Figures 5A to 5F The second engagement chuck 200a shown may have a configuration substantially the same as or similar to that of the first engagement chuck 100a. For example, the second engagement chuck 200a may include a second piezoelectric element attached to the second deformable plate 220, and the controller 300 may be configured to control local deformation of the second deformable plate 220 by using the second piezoelectric element. The method of deforming the second deformable plate 220 by using the second piezoelectric element can be the same as described above. Figure 7 The methods described are substantially the same or similar to those for deforming the first deformable plate 120 by using the first piezoelectric sheet 160.

[0101] Figure 8A and Figure 8BThis is a cross-sectional view showing the first engagement chuck 100b according to an embodiment. Figure 8A The shape of the first deformable plate 120 before deformation is shown. Figure 8B The shape of the deformable first deformable plate 120 is shown. In addition to including the first partition wall 170, Figure 8A and Figure 8B The first engagement chuck 100b shown can be used with Figures 3A to 3F The first engagement chuck 100 of the substrate engagement device shown is substantially the same as or similar to that described above. For ease of description and for brevity, descriptions that are the same as or similar to those described above may be omitted.

[0102] Reference Figure 8A and Figure 8B The first engagement chuck 100b may include a first partition wall 170 that divides the first cavity into a plurality of first sub-cavities 1211, 1212, 1213, 1214, and 1215. Multiple partition walls 170 may exist. The lower portion of the first partition wall 170 may be fixed to the first base 110, and the upper portion of the first partition wall 170 may be fixed to the first deformable plate 120. The first partition wall 170 may be configured to shorten or lengthen in the vertical direction (e.g., the Z-direction) according to the deformation level of the first deformable plate 120.

[0103] The first pneumatic controller 150 can be configured to individually control the pressure of a plurality of first sub-cavities 1211 to 1215 divided by the first partition wall 170. The first pneumatic controller 150 can control the pressure of some of the plurality of first sub-cavities 1211 to 1215 to cause local deformation of the first deformable plate 120.

[0104] For example, when air is injected into some of the plurality of first sub-cavities 1211 to 1215 via the first pneumatic controller 150, portions of the first deformable plate 120 near the sub-cavities in which air is injected can deform to increase curvature, thereby increasing the distance between said portions of the first deformable plate 120 and the first base 110. Furthermore, when air is discharged from some of the plurality of first sub-cavities 1211 to 1215 via the first pneumatic controller 150, portions of the first deformable plate 120 near the sub-cavities from which air is discharged can deform to decrease curvature, thereby decreasing the distance between said portions of the first deformable plate 120 and the first base 110.

[0105] In the following text, a method for correcting the deformation of the first deformable plate 120 according to an embodiment will be described.

[0106] First, the first engagement chuck 100b can vacuum-adsorb or vacuum-hold the first substrate S1 placed on the first deformable plate 120, and the first pneumatic controller 150 can initially deform the first deformable plate 120 into a raised shape. Subsequently, the controller 300 can perform the following operations: receive displacement data at various positions of the initially deformed first deformable plate 120 transmitted from the plurality of first displacement sensors; and determine whether each of the displacements at the various positions of the initially deformed first deformable plate 120 is within a predetermined reference range. In this case, when it is determined that at least one of the displacements sensed by the plurality of first displacement sensors at various positions of the first deformable plate 120 is outside the predetermined reference range, the controller 300 can perform feedback control to correct the deformation of the first deformable plate 120.

[0107] The controller 300 can detect when the displacement of the first deformable plate 120 during its initial deformation is outside a reference range, calculate the amount of deformation required to correct the displacement of the first deformable plate 120 at the detected position, and apply a feedback deformation control signal FDCSb corresponding to the calculated deformation amount to the first pneumatic controller 150. The controller 300 or the first pneumatic controller 150 can control the pressure of the sub-cavity corresponding to the detected position based on the feedback deformation control signal FDCSb, thereby causing local deformation of the first deformable plate 120. When the displacement of the first deformable plate 120 is adjusted to within a predetermined reference range at the detected position due to the local deformation of the first deformable plate 120, the deformation of the first deformable plate 120 can end, and the bonding between the first substrate S1 and the second substrate S2 can be performed.

[0108] Figures 5A to 5F The second engagement chuck 200a shown may have a configuration substantially the same as or similar to that of the first engagement chuck 100b. For example, the second engagement chuck 200a may include second partition walls dividing the second cavity 221 into a plurality of second sub-cavities, and the controller 300 may individually control the pressure of the plurality of second sub-cavities by using a second pneumatic controller to control the local deformation of the second deformable plate 220. In this case, the method of deforming the second deformable plate 220 by using the second pneumatic controller can be the same as described above. Figure 8A and Figure 8B The methods described are substantially the same or similar to those for deforming the first deformable plate 120 by using the first pneumatic controller 150.

[0109] Figure 9 This is a flowchart illustrating a method for manufacturing a semiconductor device according to an embodiment. Figure 10A and Figure 10B This is a cross-sectional view showing the process of bonding the first substrate S1 to the second substrate S2 in sequence. In the following text, reference will be made to... Figure 9 , Figure 10A and Figure 10B A method for manufacturing a semiconductor device according to an embodiment is described.

[0110] Reference Figure 9 and Figure 10A In operation S210, a first substrate S1 and a second substrate S2 to be bonded can be prepared.

[0111] Each of the first substrate S1 and the second substrate S2 may include an active surface on which a semiconductor structure is provided, and an active surface opposite to the active surface. The active surface may correspond to the front surface of each of the first substrate S1 and the second substrate S2, and the active surface may correspond to the rear surface or back surface of each of the first substrate S1 and the second substrate S2. In an embodiment, the first substrate S1 may include a first semiconductor structure 50 provided on its active surface, and the second substrate S2 may include a second semiconductor structure 60 provided on its active surface.

[0112] Each of the first substrate S1 and the second substrate S2 may be, for example, a single-crystal substrate or a silicon wafer. Alternatively, each of the first substrate S1 and the second substrate S2 may include a semiconductor element such as germanium, or may include a compound semiconductor such as silicon carbide (SiC), gallium arsenide (GaAs), indium arsenide (InAs), or indium phosphide (InP).

[0113] The first semiconductor structure 50 may include a first insulating layer 51 and a first conductive pattern 53, and the second semiconductor structure 60 may include a second insulating layer 61 and a second conductive pattern 63. Each of the first insulating layer 51 and the second insulating layer 61 may include, for example, silicon oxide. Each of the first conductive pattern 53 and the second conductive pattern 63 may include, for example, copper (Cu). Furthermore, in embodiments, each of the first semiconductor structure 50 and the second semiconductor structure 60 may include a semiconductor device layer configuring a plurality of individual devices and a wiring structure layer for electrically connecting the plurality of individual devices.

[0114] The plurality of individual devices may be volatile memory and / or non-volatile memory. Volatile memory may be, for example, dynamic RAM (DRAM) or static RAM (SRAM), and non-volatile memory may be, for example, flash memory, magnetic RAM (MRAM), or phase-change RAM (PRAM). Alternatively, a logic chip, a system-on-a-chip (SoC), an application-specific integrated circuit (ASIC), or an image sensor chip may be provided in each of the first substrate S1 and the second substrate S2. The wiring structure layer may include metal wiring layers and / or via plugs. The wiring structure layer may be, for example, a multilayer structure in which two or more metal wiring layers and / or two or more via plugs are alternately stacked.

[0115] In one embodiment, the first substrate S1 may be a wafer including a logic chip, and the second substrate S2 may be a wafer including a memory chip. Alternatively, the first substrate S1 may be a wafer including a logic chip, and the second substrate S2 may be a wafer including an image sensor chip.

[0116] Reference Figure 9 and Figure 10B In operation S220, the first substrate S1 can be bonded to the second substrate S2. The first bonding chuck (see example...) Figure 1 100) and the second engagement chuck (see example) Figure 1 (200) can perform alignment bonding to bond the first substrate S1 to the second substrate S2. When the first substrate S1 is bonded to the second substrate S2, the surface of the first semiconductor structure 50 ( Figure 10A 55) can contact the surface of the second semiconductor structure 60. Figure 10A (65), and the first conductive pattern 53 of the first semiconductor structure 50 can contact the second conductive pattern 63 of the second semiconductor structure 60.

[0117] Reference Figure 9 When using a substrate bonding device (see example) Figure 1 10) When the bonding between the first substrate S1 and the second substrate S2 is completed, in operation S230, annealing can be performed on the bonded first substrate S1 and second substrate S2 to increase the bonding strength between the first substrate S1 and the second substrate S2. Based on the annealing, the surface of the first semiconductor structure 50 ( Figure 10A (55) can be more firmly bonded to the surface of the second semiconductor structure 60. Figure 10A (65), and the first conductive pattern 53 of the first semiconductor structure 50 can be more firmly bonded to the second conductive pattern 63 of the second semiconductor structure 60.

[0118] Reference Figure 9In operation S240, subsequent semiconductor processes can be performed on the bonding substrate 70, which includes the first substrate S1 and the second substrate S2. These subsequent semiconductor processes can include various processes. For example, they can include deposition processes, etching processes, ion processes, and cleaning processes. Here, deposition processes can include various material layer formation processes, such as chemical vapor deposition (CVD), sputtering, and spin coating. Ion processes can include processes such as ion implantation, diffusion, and thermal treatment. Integrated circuits and wiring for configuring semiconductor devices can be formed by performing these subsequent semiconductor processes. Furthermore, these subsequent semiconductor processes can perform packaging processes that mount semiconductor devices on a printed circuit board and form a molding layer. Additionally, these subsequent semiconductor processes can include testing processes for testing semiconductor devices or semiconductor packages. Semiconductor devices or semiconductor packages can be completed by performing these subsequent semiconductor processes.

[0119] Although the inventive concept has been specifically shown and described with reference to embodiments thereof, it will be understood that various changes in form and detail may be made therein without departing from the spirit and scope of the appended claims.

[0120] This application claims the benefit of Korean Patent Application No. 10-2019-0103312, filed on August 22, 2019, with the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety.

Claims

1. A substrate bonding apparatus, comprising: A first engagement chuck, configured to support a first substrate, the first engagement chuck comprising: First base; A first deformable plate, situated on the first base and configured to support the first substrate, is configured to deform such that the distance between the first base and the first deformable plate changes; and A first piezoelectric element is disposed on the surface of the first deformable plate and configured to contract or expand in response to an applied electric current, thereby increasing or decreasing the curvature of the first deformable plate; and The second engagement chuck is configured to support the second substrate such that the second substrate faces the first substrate.

2. The substrate bonding apparatus according to claim 1, wherein The first engagement chuck further includes a plurality of first displacement sensors configured to sense displacement of different portions of the first deformable plate; and The substrate bonding apparatus further includes a controller configured to control the deformation of the first piezoelectric sheet based on displacement sensed by the plurality of first displacement sensors.

3. The substrate bonding apparatus according to claim 2, wherein The first engagement chuck is configured to initially deform the first deformable plate into a convex shape relative to the second engagement chuck. The controller is configured to generate a feedback deformation control signal for deforming the first piezoelectric sheet based on the displacement sensed by the plurality of first displacement sensors of the first deformable plate during the initial deformation, and The first piezoelectric element is configured to deform based on the feedback deformation control signal, so as to cause the first deformable plate to deform secondary.

4. The substrate bonding apparatus according to claim 3, wherein The first engagement chuck is configured to control the pressure in a first cavity between the first base and the first deformable plate to cause the first deformable plate to deform initially.

5. The substrate bonding apparatus according to claim 2, wherein the plurality of first displacement sensors are on the first base.

6. The substrate bonding apparatus according to claim 1, wherein When the first portion of the first piezoelectric sheet contracts, the first deformable plate deforms on the first portion of the first piezoelectric sheet to increase the curvature.

7. The substrate bonding apparatus according to claim 1, wherein When the first portion of the first piezoelectric sheet expands, the first deformable plate deforms on the first portion of the first piezoelectric sheet to reduce curvature.

8. The substrate bonding apparatus according to claim 1, wherein The first engagement chuck also includes a plurality of first displacement sensors, which are configured to sense the displacement of different portions of the first deformable plate, respectively. as well as The substrate bonding device further includes: A chuck actuator configured to move at least one of the first engagement chuck and the second engagement chuck; as well as The controller is configured to generate a feedback position control signal for controlling the distance between the first engagement chuck and the second engagement chuck based on displacement sensed by the plurality of first displacement sensors while the engagement region between the first substrate and the second substrate expands, and to apply the feedback position control signal to the chuck actuator.

9. The substrate bonding apparatus according to claim 1, wherein the second bonding chuck further comprises: Second base; A second deformable plate is on the second base and configured to support the second substrate. The second deformable plate is configured to deform such that the distance between the second base and the second deformable plate changes. as well as A second piezoelectric element is placed on the second deformable plate and configured to deform in response to an applied electric current, thereby deforming the second deformable plate.

10. The substrate bonding apparatus according to claim 9, wherein The first engagement chuck also includes a plurality of first displacement sensors configured to sense displacement of different portions of the first deformable plate. The second engagement chuck further includes a plurality of second displacement sensors configured to sense displacement of different portions of the second deformable plate; and The substrate bonding apparatus further includes a controller configured to control the deformation of the first piezoelectric sheet based on displacement sensed by the plurality of first displacement sensors, and to control the deformation of the second piezoelectric sheet based on displacement sensed by the plurality of second displacement sensors.

11. The substrate bonding apparatus according to claim 10, wherein The first engagement chuck is configured to initially deform the first deformable plate into a convex shape relative to the second engagement chuck. The second engagement chuck is configured to initially deform the second deformable plate into a convex shape relative to the first engagement chuck. The controller is configured to generate a feedback deformation control signal, which deforms the first piezoelectric sheet based on the displacement of the first deformable plate sensed by the plurality of first displacement sensors during the initial deformation, and deforms the second piezoelectric sheet based on the displacement of the second deformable plate sensed by the plurality of second displacement sensors during the initial deformation. The first piezoelectric element is configured to deform based on the feedback deformation control signal, so as to cause a secondary deformation of the first deformable plate, and The second piezoelectric element is configured to deform based on the feedback deformation control signal, so as to cause the second deformable plate to deform secondary.

12. The substrate bonding apparatus according to claim 11, wherein The first engagement chuck is configured to control the pressure in the first cavity between the first base and the first deformable plate, so as to cause the first deformable plate to undergo initial deformation, and The second engagement chuck is configured to control the pressure in the second cavity between the second base and the second deformable plate to cause the second deformable plate to deform initially.

13. The substrate bonding apparatus according to claim 1, wherein The first engagement chuck further includes a partition wall that divides the first cavity between the first base and the first deformable plate into multiple sub-cavities. The first engagement chuck is configured to individually control the pressure in each of the plurality of sub-cavities.

14. A substrate bonding apparatus, comprising: The first engagement chuck includes a first deformable plate configured to deform the first substrate while supporting it, a first piezoelectric sheet on the surface of the first deformable plate, and a plurality of first displacement sensors configured to sense the displacement of different portions of the first deformable plate. The second engagement chuck is configured to support the second substrate, such that the second substrate faces the first substrate; as well as The controller is configured to control the deformation of the first deformable plate. The first engagement chuck is configured to initially deform the first deformable plate into a convex shape relative to the second engagement chuck by causing the first piezoelectric sheet to deform in response to an applied electrical current. The controller is configured to generate a feedback deformation control signal for causing a secondary deformation of the first deformable plate based on the displacement sensed by the plurality of first displacement sensors of the first deformable plate during its initial deformation. At least a portion of the first piezoelectric sheet is configured to contract in response to a first electric current applied thereto, thereby increasing the curvature of at least a portion of the first deformable plate. At least a portion of the first piezoelectric sheet is configured to expand in response to a second electric current applied thereto, thereby reducing the curvature of at least a portion of the first deformable plate. The second type of electricity is different from the first type of electricity.

15. The substrate bonding apparatus according to claim 14, wherein The first engagement chuck further includes a first piezoelectric sheet on the surface of the first deformable plate, the first piezoelectric sheet comprising a plurality of piezoelectric elements, and The first engagement chuck is configured to apply power to at least some of the plurality of piezoelectric elements according to the feedback deformation control signal, so as to deform the at least some piezoelectric elements.

16. The substrate bonding apparatus of claim 14, wherein the first bonding chuck further comprises: A first base on which the first deformable plate is mounted; A partition wall divides the first cavity between the first deformable plate and the first base into multiple sub-cavities; as well as A first pneumatic controller is configured to individually control the pressure in each of the plurality of sub-cavities based on the feedback deformation control signal, wherein The lower part of the partition wall is fixed to the first base. The upper part of the partition wall is fixed to the first deformable plate, and The partition wall is configured to shorten or lengthen according to the deformation of the first deformable plate.

17. The substrate bonding apparatus according to claim 14, wherein The second engagement chuck further includes a pressure pin configured to push the center of the second substrate toward the center of the first substrate; and The pressure pin is configured to push the center of the second substrate to bring the first substrate into contact with the second substrate when the secondary deformation of the first deformable plate is completed.

18. The substrate bonding apparatus according to claim 14, wherein The first bonding chuck is configured to gradually release the vacuum adhesion of the first substrate in a direction from the center of the first substrate to the outer region of the first substrate, so as to allow spontaneous expansion of the bonding between the first substrate and the second substrate.

19. The substrate bonding apparatus of claim 18, further comprising a chuck actuator configured to move at least one of the first bonding chuck and the second bonding chuck. The controller is configured to generate a feedback position control signal for controlling the distance between the first engagement chuck and the second engagement chuck based on the displacement of the center of the first deformable plate while the engagement between the first substrate and the second substrate is extended, and to apply the feedback position control signal to the chuck actuator.

20. A substrate bonding apparatus, comprising: The first engagement chuck includes a first deformable plate configured to deform the first substrate while supporting it, a first piezoelectric sheet on the surface of the first deformable plate, and a plurality of first displacement sensors configured to sense the displacement of different portions of the first deformable plate. The second engagement chuck includes a second deformable plate configured to deform the second substrate while supporting it, and a plurality of second displacement sensors configured to sense the displacement of different portions of the second deformable plate. The second engagement chuck is located above the first engagement chuck. as well as The controller is configured to control the deformation of the first deformable plate and the deformation of the second deformable plate. The first engagement chuck is configured to cause the first deformable plate to initially deform into an upward convex shape by causing the first piezoelectric sheet to deform in response to an applied electrical current. The second engagement chuck is configured to initially deform the second deformable plate into a downward convex shape. The controller is configured to generate a feedback deformation control signal for causing secondary deformation of each of the first and second deformable plates, based on the displacement of the first deformable plate undergoing initial deformation sensed by the plurality of first displacement sensors and the displacement of the second deformable plate undergoing initial deformation sensed by the plurality of second displacement sensors. At least a portion of the first piezoelectric sheet is configured to contract in response to a first electric current applied thereto, thereby increasing the curvature of at least a portion of the first deformable plate. At least a portion of the first piezoelectric sheet is configured to expand in response to a second electric current applied thereto, thereby reducing the curvature of at least a portion of the first deformable plate. The second type of electricity is different from the first type of electricity.

Images