Sensing circuit and display device

Abstract

A sensing circuit and a display device are provided. The sensing circuit includes: a plurality of sensor electrodes; a first capacitor between the sensor electrodes; a plurality of proximity sensing electrodes electrically isolated from the sensor electrodes; and a second capacitor between at least one of the sensor electrodes and the proximity sensing electrode. The density of at least one of the proximity sensing electrodes is less than the density of at least one of the sensor electrodes.

Description

Technical Field

[0001] Aspects of example embodiments of the present disclosure relate to a sensing unit (eg, a sensing circuit or a sensing layer), a display device, and a method of driving a display device. Background Art

[0002] As the information society has developed, the demand for display devices for displaying images has increased and diversified. For example, display devices have been applied to various electronic devices such as smart phones, digital cameras, notebook computers, navigation devices, smart televisions (TVs), etc. The display device may include a display panel for displaying an image. The display device may include various sensors, for example, such as a proximity sensor for detecting the presence of a user in front of the display device, an illuminance sensor for detecting the illuminance in front of the display device, an iris sensor for recognizing the iris of the user, etc.

[0003] As applications of display devices have diversified, demands for display devices of various designs have increased. For example, for a smart phone, a display device capable of minimizing a non-display area may be desired, and a sensor may be provided at a display area (e.g., in the display area or on the display area) but not at a non-display area (e.g., in the non-display area or on the non-display area). However, in this case, the sensor may be partially hidden by a metal layer of a pixel of a display panel, and as a result, the sensing sensitivity of the sensor may be reduced (e.g., may be lowered).

[0004] The above information disclosed in this Background section is for enhancement of understanding of the background of the present disclosure and therefore it may contain information that does not constitute the prior art. Summary of the invention

[0005] One or more example embodiments of the present disclosure are directed to a sensing unit (eg, a sensing circuit or a sensing layer) capable of improving the sensing sensitivity of a sensor provided at (eg, in or on) a display area.

[0006] One or more example embodiments of the present disclosure are directed to a display device capable of improving the sensing sensitivity of a sensor provided at (eg, in or on) a display area.

[0007] One or more example embodiments of the present disclosure relate to a method of driving a display device capable of improving sensing sensitivity of a sensor disposed at (eg, in or on) a display area.

[0008] Additional aspects and features of some example embodiments of the present disclosure will be set forth in the description that follows, and in part will become apparent to those skilled in the art from the description that follows, or may be learned by practicing one or more example embodiments of the present disclosure.

[0009] According to one or more example embodiments of the present invention, a sensing circuit includes: a plurality of sensor electrodes; a first capacitor between the sensor electrodes; a plurality of proximity sensing electrodes electrically isolated from the sensor electrodes; and a second capacitor between at least one of the sensor electrodes and the proximity sensing electrode. The density of at least one of the proximity sensing electrodes is less than the density of the at least one of the sensor electrodes.

[0010] In example embodiments, the proximity sensing electrodes and the sensor electrodes may have a mesh structure in a plan view; and a mesh hole size of the at least one of the proximity sensing electrodes may be greater than a mesh hole size of the sensor electrodes.

[0011] In example embodiments, the sensing circuit may further include: a dummy pattern electrically isolated from the sensor electrodes and the proximity sensing electrodes and surrounded by some of the sensor electrodes, and a density of at least one of the proximity sensing electrodes may be less than a density of at least one of the dummy patterns.

[0012] In example embodiments, the proximity sensing electrodes and the dummy pattern may have a mesh structure in a plan view; and a mesh hole size of the at least one of the proximity sensing electrodes may be greater than a mesh hole size of the dummy pattern.

[0013] In example embodiments, the sensing circuit may further include: a bridge electrically isolated from the sensor electrode and connecting adjacent proximity sensing electrodes in the first direction among the proximity sensing electrodes to each other.

[0014] According to one or more example embodiments of the present invention, a sensing circuit includes: a plurality of sensor electrodes; a first capacitor between the sensor electrodes; and a dummy pattern electrically isolated from the sensor electrodes, the dummy pattern being electrically floating. The density of at least one of the dummy patterns may be less than the density of at least one of the sensor electrodes.

[0015] In example embodiments, the dummy patterns and the sensor electrodes may have a mesh structure in a plan view; and a mesh hole size of the at least one of the dummy patterns may be greater than a mesh hole size of the sensor electrodes.

[0016] In example embodiments, the sensing circuit may further include: a proximity sensing electrode electrically isolated from the sensor electrode; and a second capacitor between the at least one sensor electrode of the sensor electrodes and the proximity sensing electrode. The density of the at least one dummy pattern of the dummy patterns may be greater than the density of at least one proximity sensing electrode of the proximity sensing electrodes.

[0017] In example embodiments, the dummy patterns and the proximity sensing electrodes may have a mesh structure in a plan view, and a mesh hole size of the at least one of the dummy patterns may be greater than a mesh hole size of the proximity sensing electrode.

[0018] In example embodiments, the at least one of the dummy patterns is located between proximity sensing electrodes adjacent to each other in the first direction.

[0019] In example embodiments, the sensing circuit may further include: a bridge electrically isolated from the sensor electrode and connecting adjacent proximity sensing electrodes in the first direction among the proximity sensing electrodes to each other.

[0020] In example embodiments, the bridge may bypass the dummy pattern.

[0021] In example embodiments, the sensing circuit may have a mesh structure in a plan view; and a distance between the bridge and the sensor electrode may be greater than a maximum length of a mesh hole of each of the sensor electrodes.

[0022] According to one or more example embodiments of the present invention, a sensing circuit includes: a plurality of sensor electrodes; a first capacitor between the sensor electrodes; a plurality of proximity sensing electrodes electrically isolated from the sensor electrodes; a second capacitor between at least one of the sensor electrodes and the proximity sensing electrode; and a bridge electrically isolated from the sensor electrodes and connecting adjacent proximity sensing electrodes in a first direction to each other. The sensing circuit may have an empty space surrounded by one of the sensor electrodes.

[0023] In example embodiments, the bridge may extend across the empty space.

[0024] In example embodiments, the bridge may bypass the empty space.

[0025] In example embodiments, the sensing circuit may have a mesh structure in a plan view, and a distance between the bridge and the sensor electrode may be greater than a maximum length of a mesh hole of each of the sensor electrodes.

[0026] According to one or more example embodiments, a display device includes: a display panel, on a first surface of a substrate, the display panel includes a main display area and a sub-display area; a sensing circuit, on the display panel, the sensing circuit includes a first sensing area overlapping the main display area and a second sensing area overlapping the sub-display area; and a sensor, on a second surface of the substrate opposite to the first surface of the substrate. The second sensing area includes a sensor electrode, a proximity sensing electrode, and a dummy pattern, the proximity sensing electrode and the dummy pattern are surrounded by the sensor electrode, and the sensor overlaps at least one of the proximity sensing electrodes and / or at least one of the dummy patterns.

[0027] In example embodiments, a density of the at least one of the proximity sensing electrodes may be smaller than a density of at least one of the sensor electrodes.

[0028] In example embodiments, the proximity sensing electrodes and the sensor electrodes may have a mesh structure in a plan view, and a mesh hole size of the at least one of the proximity sensing electrodes may be greater than a mesh hole size of the sensor electrodes.

[0029] In example embodiments, a density of the at least one of the proximity sensing electrodes may be smaller than a density of the at least one of the dummy patterns.

[0030] In example embodiments, the proximity sensing electrodes and the dummy pattern may have a mesh structure in a plan view, and a mesh hole size of the at least one of the proximity sensing electrodes may be greater than a mesh hole size of the dummy pattern.

[0031] In example embodiments, a density of the at least one of the dummy patterns may be smaller than a density of at least one of the sensor electrodes.

[0032] In example embodiments, the dummy patterns and the sensor electrodes may have a mesh structure in a plan view, and a mesh hole size of the at least one of the dummy patterns may be greater than a mesh hole size of the sensor electrodes.

[0033] In example embodiments, the display device may further include a bridge electrically isolated from the sensor electrode and connecting adjacent proximity sensing electrodes in the first direction among the proximity sensing electrodes to each other, and the bridge may not overlap the sensor.

[0034] In example embodiments, the first sensing region may include a sensor electrode and a dummy pattern.

[0035] According to one or more example embodiments of the present invention, a method for driving a display device includes: determining whether an object is within the proximity of a top surface of a display panel through a proximity sensor, and the display panel is turned off in response to the proximity sensor determining that the object is within the proximity of the top surface of the display panel; determining that the object is not within the proximity of the top surface of the display panel through the proximity sensor; determining whether the object is within the proximity of the top surface of the display panel through a sensing circuit of the display panel based on a mutual capacitance between a driving electrode of the sensing circuit and a proximity sensing electrode in response to the proximity sensor determining that the object is not within the proximity of the top surface of the display panel; determining that the object is within the proximity of the top surface of the display panel through the sensing circuit based on the mutual capacitance; and turning off the display panel in response to the sensing circuit determining that the object is within the proximity of the top surface of the display panel based on the mutual capacitance.

[0036] According to one or more of the foregoing exemplary embodiments and other exemplary embodiments of the present disclosure, since the secondary display area may include a transmissive portion, the sensor overlapped with the secondary display area may receive light from the top of the display panel through the transmissive portion. Therefore, even when the sensor is disposed at the bottom of the display panel, the sensing capability of the sensor may be prevented or substantially prevented from being reduced.

[0037] According to some example embodiments, a proximity sensor electrode or a dummy pattern overlapped with the sensor may be formed to have a smaller density than a proximity sensor electrode or a dummy pattern not overlapped with the sensor. A proximity sensor electrode or a dummy pattern overlapped with the sensor may be formed to have a smaller density than a drive electrode and / or a sensing electrode. Therefore, the transmittance of a sensing unit (e.g., a sensing circuit or a sensing layer) overlapped with the sensor of the display panel may be enhanced, and as a result, even when the sensor is disposed at the bottom of the display panel, degradation of the sensing capability of the sensing unit may be prevented or reduced.

[0038] According to some example embodiments, the presence of a proximity input from a user may be detected by applying a sensing drive signal to a plurality of column drive electrodes concurrently (e.g., simultaneously or at the same time) and sensing a voltage charged in a mutual capacitance via a plurality of rows of proximity sensing electrodes. Therefore, even when one of the proximity sensing electrodes is omitted or the density of one of the proximity sensing electrodes is reduced, degradation of the performance of proximity sensing may be prevented or reduced.

[0039] According to some example embodiments, the sensing region may overlap with the sensor and may include an empty space surrounded by the sensor electrode (e.g., around its periphery). Therefore, the transmittance of the sensing unit of the display panel may be enhanced, and as a result, even when the sensor is disposed at the bottom of the display panel, the degradation of the sensing capability of the sensing unit may be prevented or reduced.

[0040] According to some example embodiments, the presence of an object within proximity of the top surface of the display device can be detected not only by using the proximity sensor but also by using the sensing unit of the display panel. Therefore, the degradation of the sensing capability of the proximity sensor can be compensated by the sensing unit of the display panel. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] The above and other aspects and features of the present disclosure will become more apparent to those skilled in the art from the following detailed description of example embodiments with reference to the accompanying drawings.

[0042] Figure 1 is a perspective view of a display device according to an embodiment of the present disclosure.

[0043] Figure 2 yes Figure 1 An exploded perspective view of a display device.

[0044] Figure 3A and Figure 3B It is shown Figure 1 A side view of a display panel and a display driving unit of a display device.

[0045] Figure 4 is shown with Figure 3A A plan view of the components associated with the display unit.

[0046] Figure 5 It is shown Figure 4 A plan view of pixels at the main display area.

[0047] Figure 6 It is shown Figure 4 A plan view of pixels in the secondary display area.

[0048] Figure 7 is shown with Figure 3A A plan view of the components associated with the sensing unit.

[0049] Figure 8 Shows the connection to Figure 7 An exemplary sensing driving unit of the driving electrodes and the sensing electrodes at the first sensing region.

[0050] Fig. 9 Shows the connection to Figure 7 An exemplary sensing drive unit of a driving electrode, a sensing electrode and a proximity sensing electrode at a second sensing region of the present invention.

[0051] Fig.10 It is shown Figure 7 FIG. 1 is a plan view of an exemplary driving electrode, an exemplary sensing electrode, and an exemplary dummy pattern at a first sensing region of FIG.

[0052] Fig.11Ayes Fig.10 An enlarged plan view of area A.

[0053] Fig. 11B and Fig. 11C The arrangement of sub-pixels is shown.

[0054] Fig.12 is along Fig.11A A cross-sectional view taken along line II'.

[0055] Fig.13 It is shown Figure 7 FIG. 1 is a plan view of an exemplary driving electrode, an exemplary sensing electrode, an exemplary proximity sensing electrode, and an exemplary dummy pattern at a second sensing region of FIG.

[0056] Fig.14A and Fig. 14B yes Fig.13 An enlarged plan view of area B.

[0057] Fig.15 is along Fig.14A A cross-sectional view taken along line II-II'.

[0058] Fig.16 is along Fig.14A A cross-sectional view taken along line III-III'.

[0059] Fig.17 It is shown Figure 7 FIG. 1 is a plan view of an exemplary driving electrode, an exemplary sensing electrode, an exemplary proximity sensing electrode, and an exemplary dummy pattern at a second sensing region of FIG.

[0060] Fig.18 It is shown Figure 7 FIG. 1 is a plan view of an exemplary driving electrode, an exemplary sensing electrode, an exemplary proximity sensing electrode, and an exemplary dummy pattern at a second sensing region of FIG.

[0061] Fig.19 It is shown Figure 7 FIG. 1 is a plan view of an exemplary driving electrode, an exemplary sensing electrode, an exemplary proximity sensing electrode, and an exemplary dummy pattern at a second sensing region of FIG.

[0062] Fig. 20 It is shown Figure 7 FIG. 1 is a plan view of an exemplary driving electrode, an exemplary sensing electrode, an exemplary proximity sensing electrode, and an exemplary dummy pattern at a second sensing region of FIG.

[0063] Fig.21 It is shown Figure 7 FIG. 1 is a plan view of an exemplary driving electrode, an exemplary sensing electrode, an exemplary proximity sensing electrode, and an exemplary dummy pattern at a second sensing region of FIG.

[0064] Fig. 22 It is shown Figure 7 FIG. 1 is a plan view of an exemplary driving electrode, an exemplary sensing electrode, an exemplary proximity sensing electrode, and an exemplary dummy pattern at a second sensing region of FIG.

[0065] Fig.23 It is shown Figure 7 FIG. 1 is a plan view of an exemplary driving electrode, an exemplary sensing electrode, an exemplary proximity sensing electrode, and an exemplary dummy pattern at a second sensing region of FIG.

[0066] Fig.24 is a perspective view illustrating a display panel and a display driving unit of a display device according to another embodiment of the present disclosure.

[0067] Fig.25 is a perspective view illustrating a display panel and a display driving unit of a display device according to another embodiment of the present disclosure.

[0068] Fig.26 is a perspective view illustrating a display panel and a display driving unit of a display device according to another embodiment of the present disclosure.

[0069] Fig. 27 is a perspective view illustrating a display panel and a display driving unit of a display device according to another embodiment of the present disclosure.

[0070] Fig.28 is a flowchart illustrating a method of driving a display device according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0071] In the following description, for the purpose of explanation, various specific details are set forth to provide a thorough understanding of various example embodiments or implementations of the present invention. As used herein, "embodiment" and "implementation" may be interchangeable words, which are non-limiting examples of devices or methods that employ one or more aspects and features of the example embodiments disclosed herein. However, it is apparent that various example embodiments may be practiced without these specific details or with one or more equivalent arrangements. In addition, unless otherwise stated, various example embodiments may be different from one another, but need not be exclusive. For example, without departing from the spirit and scope of the present invention, the specific shape, configuration and / or characteristics of an example embodiment may be used or implemented together with the specific shape, configuration and / or characteristics of another example embodiment.

[0072] Unless otherwise noted, the illustrated example embodiments should be understood as providing example features of varying details in which some example embodiments of the present invention may be implemented in practice. Therefore, unless otherwise noted, the features, components, modules, layers, films, panels, regions, aspects, etc. (hereinafter, individually or collectively referred to as "elements") of the various example embodiments may be further combined, separated, interchanged, and / or rearranged with each other, or with other embodiments, without departing from the spirit and scope of the present invention.

[0073] As used herein, cross hatching and / or shading are generally provided in the accompanying drawings to clarify the boundaries between adjacent elements. Thus, unless otherwise stated, the presence or absence of cross hatching or shading does not convey or indicate any preference or requirement for a particular material, material property, size, ratio, commonality between the elements shown, and / or any other characteristics, attributes, properties, etc. of the elements. In addition, in the accompanying drawings, the size and relative size of the elements may be exaggerated for clarity and / or descriptive purposes. When the example embodiments may be implemented differently, the specific process sequence may be performed differently from the described sequence. For example, two processes described in succession may be performed simultaneously or substantially simultaneously or in an order opposite to the described sequence. In addition, the same reference numerals always represent the same elements.

[0074] When an element or layer is referred to as "on" another element or layer, "connected to" or "bonded to" another element or layer, the element or layer may be directly on, directly connected to or directly bonded to the other element or layer, or one or more intermediate elements or layers may be present. However, when an element or layer is referred to as "directly on" another element or layer, "directly connected to" or "directly bonded to" another element or layer, there is no intermediate element or layer. For this reason, the term "connection" may refer to physical connection, electrical connection and / or fluid connection with or without intermediate elements. In addition, the X-axis, Y-axis and Z-axis are not limited to the three axes (such as x-axis, y-axis and z-axis) of a rectangular coordinate system, and may be interpreted in a wider sense. For example, the X-axis, Y-axis and Z-axis may be perpendicular to each other, or may represent different directions that are not perpendicular to each other. For the purpose of this disclosure, "at least one of X, Y, and Z" and "at least one selected from the group consisting of X, Y, and Z" may be interpreted as any combination of only X, only Y, only Z, or two or more of X, Y, and Z, such as XYZ, XYY, YZ, and ZZ. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0075] Although the terms "first", "second", etc. may be used herein to describe various types of elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another element. Therefore, without departing from the spirit and scope of the present disclosure, the first element discussed below may be named as the second element.

[0076] For descriptive purposes, spatially relative terms such as "under," "below," "under," "down," "above," "up," "above," "higher," "side" (e.g., as in "sidewall"), etc., may be used herein to describe the relationship of one element to another (other) element as shown in the accompanying drawings. In addition to the orientation depicted in the accompanying drawings, the spatially relative terms are intended to include different orientations of the device in use, operation, and / or manufacture. For example, if the device in the accompanying drawings is turned over, an element described as being "under" or "beneath" other elements or features will subsequently be positioned as being "above" the other elements or features. Thus, the example term "under" can include both above and below orientations. In addition, the device can be positioned otherwise (e.g., rotated 90 degrees or at other orientations), and as such, the spatially relative descriptors used herein should be interpreted accordingly.

[0077] The terms used here are for the purpose of describing a particular embodiment, and are not intended to be limited. As used here, unless the context clearly indicates otherwise, the singular forms "one", "one (kind / person)" and "said (the)" are also intended to include plural forms. In addition, when the terms "comprise" and / or "include" and their variations are used in this specification, it is explained that there are stated features, wholes, steps, operations, elements, components and / or their groups, but it is not excluded that there are or add one or more other features, wholes, steps, operations, elements, components and / or their groups. It is also noted that, as used here, the terms "substantially (substantially)", "approximately (about)" and other similar terms are used as approximate terms and not as degree terms, and are used to explain the inherent deviations of measured values, calculated values ​​and / or provided values ​​recognized by those of ordinary skill in the art. In addition, when describing the embodiments of the present disclosure, the use of "can" refers to "one or more embodiments of the present disclosure". As used here, the term "use" and its variations can be considered to be synonymous with the term "utilize" and its variations, respectively. In addition, the term "exemplary" is intended to indicate an example or explanation.

[0078] Various example embodiments are described herein with reference to cross-sections and / or exploded illustrations as schematic diagrams of some example embodiments and / or intermediate structures. Thus, variations in the shapes of the illustrations, such as those caused by manufacturing techniques and / or tolerances, are expected. Therefore, the example embodiments disclosed herein should not be interpreted as being limited to the specific illustrated shapes of the regions, but will include variations or deviations in the shapes caused by, for example, manufacturing processes. In this regard, the regions shown in the accompanying drawings may be schematic in nature, and the shapes of these regions may not reflect the actual shapes of the regions of the device, and are not necessarily intended to be limiting.

[0079] According to the practice in the art, some example embodiments are described in terms of functional blocks, units and / or modules and shown in the accompanying drawings. It will be understood by those skilled in the art that these blocks, units and / or modules are physically implemented by electronic (or optical) circuits (such as logic circuits, discrete components, microprocessors, hard-wired circuits, memory elements, wiring connections, etc.) that can be formed using semiconductor-based manufacturing techniques or other manufacturing techniques. In the case where the blocks, units and / or modules are implemented by microprocessors or other similar hardware, they can be programmed and controlled using software (e.g., microcode) to perform the various functions discussed here, and the blocks, units and / or modules can be selectively driven by firmware and / or software. It is also contemplated that each block, unit and / or module can be implemented by dedicated hardware, or implemented as a combination of dedicated hardware for performing some functions and processors (e.g., one or more programmed microprocessors and associated circuits) for performing other functions. In addition, without departing from the spirit and scope of the present invention, each block, unit and / or module of some example embodiments can be physically divided into two or more interactive and discrete blocks, units and / or modules. Furthermore, the blocks, units and / or modules of some example embodiments may be physically combined into more complex blocks, units and / or modules without departing from the spirit and scope of the invention.

[0080] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those of ordinary skill in the art to which this disclosure is a part. Terms (such as those defined in general dictionaries) should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and should not be interpreted in an idealized or overly formal sense unless explicitly so defined herein.

[0081] Figure 1 is a perspective view of a display device according to an embodiment of the present disclosure. Figure 2 yes Figure 1 An exploded perspective view of a display device.

[0082] Reference Figure 1 and Figure 2 The display device 10 includes a cover window 100, a display panel 300, a display circuit board 310, a display driving unit (e.g., a display driver) 320, a flexible film 340, a bracket 600, a main circuit board 700, sensors 740, 750, 760 and 770, and a lower cover 900.

[0083] As used herein, the terms "above", "top", and "top surface" may indicate the direction in which the cover window 100 is disposed relative to the display panel 300 (e.g., the Z-axis direction), and the terms "below", "bottom", and "bottom surface" may indicate the direction in which the bracket 600 is disposed relative to the display panel 300 (e.g., the direction opposite to the Z-axis direction). In addition, as used herein, the terms "right", "left", "upper", and "lower" may indicate the direction when viewed from above the display panel 300. For example, the term "right" may indicate the X-axis direction, the term "left" may indicate the direction opposite to the X-axis direction, the term "upper" may indicate the Y-axis direction, and the term "lower" may indicate the direction opposite to the Y-axis direction.

[0084] The display device 10 may be a device for displaying moving images and / or still images. The display device 10 may be used in portable electronic devices (e.g., such as mobile phones, smart phones, tablet personal computers (PCs), smart watches, watch phones, mobile communication terminals, electronic notebooks, electronic books, portable multimedia players (PMPs), navigation devices, ultra mobile PCs (UMPCs), etc.) and in various other suitable devices and / or products (e.g., such as televisions (TVs), notebook computers, monitors, billboards, Internet of Things (IoT) devices, etc.).

[0085] The display device 10 may have a rectangular shape in a plan view. As used herein, a plan view may refer to a view according to a plane that is parallel to or substantially parallel to (e.g., orthogonal to) a top surface of an associated device, component, element, or layer (e.g., the display device 10). For example, the display device 10 may have a rectangular shape having a pair of short sides extending in a first direction (e.g., an X-axis direction) and a pair of long sides extending in a second direction (e.g., a Y-axis direction). Figure 1 and Figure 2 As shown in , the display device 10 may have a corner where the short side and the long side of the display device 10 converge (e.g., meet), and the corner may be rounded to have a curvature (e.g., a predetermined curvature) or may be a right angle. However, the shape of the display device 10 is not limited thereto, and the display device 10 may be formed to have various suitable shapes, such as, for example, various other polygonal shapes, a circular shape, an elliptical shape, etc.

[0086] The display device 10 may include a first region DR1 and a plurality of second regions DR2. The first region DR1 may be disposed between the second regions DR2. For example, the first region DR1 may be formed to be flat, and the second region DR2 may extend from the left and right sides of the first region DR1. The second region DR2 may be formed to be flat or may be formed to be curved. In the case where the second region DR2 is formed to be flat, an angle formed between the first region DR1 and a corresponding second region DR2 in the second region DR2 may be an obtuse angle. In the case where the second region DR2 is formed to be curved, the second region DR2 may have a uniform or variable curvature.

[0087] Figure 1 The second region DR2 is shown to extend from the left and right sides of the first region DR1, but the present disclosure is not limited thereto. For example, the second region DR2 may extend from only one of the left and right sides of the first region DR1. In another example, in addition to extending from the left and right sides of the first region DR1, the second region DR2 may also extend from the upper and lower sides of the first region DR1, or the second region DR2 may extend from the upper and lower sides of the first region DR1 without extending from the left and right sides of the first region DR1. For convenience, the second region DR2 is described hereinafter as being disposed on the left and right sides of the display device 10.

[0088] The cover window 100 may be disposed on the display panel 300 to cover the top surface of the display panel 300. Therefore, the cover window 100 may protect the top surface of the display panel 300.

[0089] The cover window 100 may be disposed at the first region DR1 (e.g., in or on the first region DR1) and at the second region DR2 (e.g., in or on the second region DR2). The cover window 100 may include a first transmission portion MDA100 and a second transmission portion SDA100 corresponding to the display panel 300 and a light blocking portion NDA100 corresponding to a region other than the display panel 300 (e.g., a peripheral region). Figure 1 and Figure 2As shown in , the second transmission portion SDA100 may be disposed at one side of the first transmission portion MDA100 (e.g., on one side of the first transmission portion MDA100), for example, at the upper side of the first transmission portion MDA100 (e.g., on the upper side of the first transmission portion MDA100). The first transmission portion MDA100 and the second transmission portion SDA100 may be disposed at the first region DR1 (e.g., in or on the first region DR1) and at the second region DR2 (e.g., in or on the second region DR2). The light blocking portion NDA100 may be formed to be opaque. The light blocking portion NDA100 may include a decorative layer that can be viewed by a user (e.g., can be seen by a user) when an image is not displayed.

[0090] The display panel 300 may be disposed under the cover window 100. The display panel 300 may be disposed at the first region DR1 (e.g., in or on the first region DR1) and at the second region DR2 (e.g., in or on the second region DR2). Therefore, an image displayed by the display panel 300 may be viewed at the first region DR1 (e.g., in or on the first region DR1) and at the second region DR2 (e.g., in or on the second region DR2). In other words, an image displayed by the display panel 300 may be viewed at the top surface of the display device 10 (e.g., in or on the top surface of the display device 10) through the cover window 100, and may be viewed at the left and right edges of the display device 10 (e.g., in or on the left and right edges of the display device 10) through the cover window 100.

[0091] The display panel 300 may include a main display area MDA and a sub-display area SDA. The main display area MDA may be disposed to overlap with the first transmission portion MDA100 of the cover window 100. The sub-display area SDA may be disposed to overlap with the second transmission portion SDA100 of the cover window 100. The sub-display area SDA may be disposed at one side of the main display area MDA (e.g., on one side of the main display area MDA), for example, as Figure 2 3. As shown in FIG. 3, the auxiliary display area SDA is disposed at the upper side of the main display area MDA (e.g., on the upper side of the main display area MDA), but the present disclosure is not limited thereto. For example, the auxiliary display area SDA may be disposed adjacent to a corner of the display panel 300 and may be surrounded by the main display area MDA (e.g., around its periphery or partially around its periphery). Figure 2 The display panel 300 is shown to include a single subsidiary display area SDA, but the present disclosure is not limited thereto. For example, the display panel 300 may include a plurality of (eg, may include a plural number of) subsidiary display areas SDA.

[0092] The display panel 300 may be a light-emitting display panel including a light-emitting element. For example, the display panel 300 may be an OLED display panel using an organic light-emitting diode (OLED), a μLED display panel using a micro light-emitting diode (μLED), a QLED display panel using a quantum dot light-emitting diode (QLED), an inorganic light-emitting diode (ILED) display panel including an inorganic semiconductor, etc. For convenience, the display panel 300 is described as an OLED display panel hereinafter.

[0093] One end of the display circuit board 310 may be connected to (eg, attached to) one side of the display panel 300. The display circuit board 310 may be a flexible printed circuit board (FPCB), a rigid printed circuit board (PCB), and / or a hybrid PCB, etc.

[0094] The display driving unit 320 receives a control signal and a power supply voltage via the display circuit board 310, and generates and / or outputs a signal and a voltage for driving the display panel 300. The display driving unit 320 may be formed as an integrated circuit (IC) so as to be connected to (e.g., attached to or mounted on) the flexible film 340 in a chip on film (COF) manner, or connected to (e.g., attached to or mounted on) the display panel 300 in a chip on glass (COG) manner, a chip on plastic (COP) manner, or by ultrasonic bonding, but the present disclosure is not limited thereto.

[0095] The sensing drive unit (e.g., sensing driver) 330 may be provided on the display circuit board 310. The sensing drive unit 330 may be formed as an IC and may be connected to the top surface of the display circuit board 310 (e.g., may be attached to or mounted on the top surface of the display circuit board 310). The sensing drive unit 330 may be electrically connected to the touch electrodes of the touch sensor layer of the display panel 300 via the display circuit board 310. The sensing drive unit 330 may output touch data including coordinates of a touch input from a user. For example, the sensing drive unit 330 may apply a touch drive signal to some touch electrodes (e.g., drive electrodes) of the touch electrodes of the touch sensor layer, and may detect a charge change in capacitance between the drive electrodes of the touch sensor layer and other touch electrodes (e.g., sensor electrodes) to output touch data. A power supply unit (e.g., power supply) may be further provided on the display circuit board 310. The power supply unit may provide a display drive voltage for driving the display drive unit 320.

[0096] In some embodiments, the flexible film 340 may be a flexible, bendable, foldable, etc. film. For example, in some embodiments, the flexible film 340 may be bent so that when the flexible film 340 is bent, the display circuit board 310 is disposed below the display panel 300. In this case, the top surface of the display circuit board 310 may face a direction (e.g., a direction opposite to the Z-axis direction) toward the bottom surface of the display device 10 (e.g., toward the bracket 600 relative to the display panel 300). For example, as described in more detail below, Figure 3A As shown in FIG. 1 , one side of the flexible film 340 may extend from below the display panel 300 to be connected to the top surface of the display panel 300 (e.g., attached to the top surface of the display panel 300) via an anisotropic conductive film (ACF). The other side of the flexible film 340 may extend from above the display circuit board 310 to be connected to the top surface of the display circuit board 310 (e.g., attached to the top surface of the display circuit board 310) via the ACF. The display driving unit 320 may be connected to the flexible film 340 (e.g., attached to or mounted on the flexible film 340) in a COF manner.

[0097] In other embodiments, the flexible film 340 may be omitted (e.g., may not be provided), and the display circuit board 310 may be directly connected to (e.g., directly attached to) one side of the display panel 300. In this case, as will be described in more detail below, Figure 3B As shown in FIG. 1 , one side of the display panel 300 may be bent toward the bottom surface of the display panel 300, and the display circuit board 310 may be connected to one side of the display panel 300 (e.g., attached to one side of the display panel 300). The display driving unit 320 may be connected to one side of the display panel 300 (e.g., attached to or mounted on one side of the display panel 300) in a COP manner or by ultrasonic bonding.

[0098] The bracket 600 may be disposed below the display panel 300. The bracket 600 may include plastic, metal, or a combination thereof. The bracket 600 may have a first camera hole CMH1 into which the first camera sensor 720 is inserted, a cable hole CAH through which the cable 314 connected to the display circuit board 310 extends (e.g., passes), and a sensor hole SH at which the sensors 740, 750, 760, and 770 are disposed (e.g., in which). However, the present disclosure is not limited thereto. For example, in another embodiment, the sensor hole SH may be omitted from the bracket 600 (e.g., may not be disposed in the bracket 600), and in this case, the bracket 600 may be formed so as not to overlap with the auxiliary display area SDA of the display panel 300.

[0099] The main circuit board 700 and the battery 790 may be disposed under the bracket 600. The main circuit board 700 may be a PCB or an FPCB.

[0100] The main circuit board 700 may include a main processor 710, a first camera sensor 720, a main connector 730, and sensors 740, 750, 760, and 770. The first camera sensor 720 may be disposed on both the top surface and the bottom surface of the main circuit board 700, the main processor 710 may be disposed on the bottom surface of the main circuit board 700, and the main connector 730 may be disposed on the bottom surface of the main circuit board 700. The sensors 740, 750, 760, and 770 may be disposed on the top surface of the main circuit board 700.

[0101] The main processor 710 may control various functions (e.g., all functions) of the display device 10. For example, the main processor 710 may output digital video data to the display driving unit 320 via the display circuit board 310 so that the display panel 300 displays an image. In addition, the main processor 710 may receive touch data from the sensing driving unit 330, may determine the coordinates of a touch input from a user, and may execute an application corresponding to an icon displayed at the coordinates of the touch input (e.g., an icon selected by the coordinates of the touch input).

[0102] The main processor 710 may control the display device 10 according to the sensor signals received from the sensors 740, 750, 760, and 770. For example, the main processor 710 may determine whether an object is within the proximity of the top surface of the display device 10 (e.g., exists or is located within the proximity of the top surface of the display device 10) according to (e.g., based on) the proximity sensor signal received from the proximity sensor 740. During a call mode in which a user makes a call using the display device 10, the main processor 710 may control the display panel 300 not to display an image, and may further control the display device 10 to recognize a touch input input by the user (e.g., when an object is detected within the proximity of the top surface of the display device 10).

[0103] The main processor 710 may determine the brightness (e.g., brightness amount or brightness level) at the top surface of the display device 10 according to the brightness sensor signal received from the brightness sensor 750. The main processor 710 may control the brightness of the image displayed by the display panel 10 according to (e.g., based on) the brightness at the top surface of the display device 10.

[0104] The main processor 710 may determine whether the iris image received from the user is the same or substantially the same as the iris image stored in the memory (e.g., stored in the memory in advance or in advance) according to the iris sensor signal received from the iris sensor 760. When the iris image from the user is the same or substantially the same as the iris image stored in the memory, the main processor 710 may unlock the display device 10 and may display the home screen on the display panel 300.

[0105] The first camera sensor 720 may process a still image and / or a moving image obtained (e.g., captured) by the image sensor, and may output the processed image to the main processor 710. The first camera sensor 720 may include (e.g., may be) a complementary metal oxide semiconductor (CMOS) image sensor or a charge coupled device (CCD) image sensor. Since the first camera sensor 720 may be exposed at the bottom surface of the lower cover 900 through the second camera hole CMH2, the first camera sensor 720 may capture an image of an object or background from the bottom (e.g., the rear or bottom surface) of the display device 10.

[0106] The cable 314 extending through (eg, penetrating) the cable hole CAH of the bracket 600 may be connected to the main connector 730. As a result, the main circuit board 700 may be electrically connected to the display circuit board 310.

[0107] Sensors 740, 750, 760, and 770 may include a proximity sensor 740, an illumination sensor 750, an iris sensor 760, and a second camera sensor 770. However, the present disclosure is not limited thereto, and sensors 740, 750, 760, and 770 may include any suitable type of sensor known to those skilled in the art.

[0108] The proximity sensor 740 may be a sensor for determining whether an object is within the proximity of the top surface of the display device 10 (e.g., exists or is located within the proximity of the top surface of the display device 10). For example, the proximity sensor 740 may include a light source that outputs light and a light receiver that receives light reflected from the object. The proximity sensor 740 may determine whether the object is within the proximity of the top surface of the display device 10 according to (e.g., based on) the amount of light reflected from the object. Since the proximity sensor 740 may be disposed to overlap the sensor hole SH, the sub-display area SDA of the display panel 300, and the second transmission portion SDA100 of the cover window 100 in the thickness direction (e.g., Z-axis direction) of the display panel 300, the proximity sensor 740 may generate a proximity sensor signal according to the presence of an object within the proximity of the top surface of the display device 10, and may output the proximity sensor signal to the main processor 710.

[0109] The illuminance sensor 750 may be a sensor for detecting the brightness (e.g., the amount of brightness or the level of brightness) at the top surface of the display device 10. For example, the illuminance sensor 750 may include a resistor in which the resistance varies according to the brightness of the incident light (e.g., the light incident thereon). In this case, the illuminance sensor 750 may determine the brightness at the top surface of the display device 10 according to (e.g., based on) the change in the resistance of the resistor caused by the brightness of the incident light. Because the illuminance sensor 750 is disposed to overlap the sensor hole SH, the sub-display area SDA of the display panel 300, and the second transmission portion SDA100 of the cover window 100 in the thickness direction (e.g., the Z-axis direction) of the display panel 300, the illuminance sensor 750 may generate an illuminance sensor signal according to the brightness at the top surface of the display device 10, and may output the illuminance sensor signal to the main processor 710.

[0110] The iris sensor 760 may be a sensor for determining whether an image of the user's iris is identical or substantially identical to an iris image stored in a memory (e.g., stored in the memory in advance or in advance). For example, the iris sensor 760 may generate an iris sensor signal according to whether the image of the user's iris is identical or substantially identical to an iris image stored in the memory, and may output the iris sensor signal to the main processor 710.

[0111] The second camera sensor 770 may process a still image and / or a moving image obtained (e.g., captured) by the image sensor, and may output the processed image to the main processor 710. For example, the second camera sensor 770 may include (e.g., may be) a CMOS image sensor or a CCD image sensor. The number of pixels of the second camera sensor 770 may be smaller than the number of pixels of the first camera sensor 720, and the size of the second camera sensor 770 may be smaller than the size of the first camera sensor 720. Since the second camera sensor 770 may be disposed to overlap the sensor hole SH, the sub-display area SDA of the display panel 300, and the second transmission portion SDA100 of the cover window 100 in the thickness direction (e.g., Z-axis direction) of the display panel 300, the second camera sensor 770 may capture an image of an object or background from the top (e.g., the front or top surface) of the display device 10.

[0112] The battery 790 may be disposed so as not to overlap the main circuit board 700 in the third direction (eg, the thickness direction or the Z-axis direction). The battery 790 may overlap the battery hole BH of the bracket 600.

[0113] A mobile communication module may be further provided on the main circuit board 700, and the mobile communication module may exchange wireless signals with at least one of a base station, an external terminal, and a server via a mobile communication network. For example, the wireless signal may include various types of data associated with transmission / reception of audio signals, video call signals, text / multimedia messages, etc.

[0114] The lower cover 900 may be disposed below the main circuit board 700 and the battery 790. The lower cover 900 may be connected to (e.g., attached to or fastened to) the bracket 600. The lower cover 900 may form a bottom exterior (e.g., a rear exterior or rear portion) of the display device 10. The lower cover 900 may include plastic, metal, or a combination thereof.

[0115] The second camera hole CMH2 may be formed in the lower cover 900, and the bottom surface of the first camera sensor 720 is exposed through the second camera hole CMH2. However, the present disclosure is not limited thereto, and the positions of the first camera sensor 720 and the first camera hole CMH1 and the second camera hole CMH2 corresponding to the first camera sensor 720 are not limited to Figure 2 Those shown in .

[0116] Figure 3A and Figure 3B It is shown Figure 1 A side view of a display panel and a display driving unit of a display device.

[0117] Reference Figure 3A and Figure 3B , the display panel 300 may include a substrate SUB, a display unit (eg, a display circuit or a display layer) DISL, a sensing unit (eg, a sensing circuit or a sensing layer) SENL, a polarizing film PF, and a panel bottom cover PB.

[0118] The substrate SUB may be formed of an insulating material (eg, such as glass, quartz, polymer resin, etc.). The substrate SUB may be a rigid substrate (eg, Figure 3A ) or may be a bendable, foldable and / or rollable flexible substrate (e.g., as Figure 3B ).

[0119] The display unit DISL may be disposed on the substrate SUB. The display unit DISL may include a plurality of pixels and may be a layer that displays an image. The display unit DISL may include a TFT layer in which a plurality of thin film transistors (TFTs) are formed, a light emitting element layer in which a light emitting element that emits light is formed, and an encapsulation layer that may encapsulate the light emitting element layer.

[0120] The display unit DISL may be divided into a display area DA and a non-display area NDA. The display area DA may be an area where pixels are arranged (e.g., in or on it) to display an image. The non-display area NDA may be an area where (e.g., in or on it) an image is not displayed. The non-display area NDA may be arranged to surround the display area DA (e.g., around the periphery of the display area DA). In addition to the pixels, scan lines, data lines, and power lines connected to the pixels may also be arranged at the display area DA (e.g., in the display area DA or on the display area DA). A scan driving unit (e.g., a scan driver) for applying a scan signal to the scan line and a fan-out line for connecting the data line and the display driving unit 320 may be arranged at the non-display area NDA (e.g., in or on the non-display area NDA).

[0121] The sensing unit SENL may be disposed on the display unit DISL. The sensing unit SENL may include a sensor electrode and may be a layer for detecting a touch input from a user. The sensing unit SENL may include a sensing area TSA and a sensing peripheral area TPA. The sensing area TSA may be an area where a sensor electrode is disposed (e.g., therein or thereon) to detect a touch input from a user. The sensing peripheral area TPA may be an area where a sensor electrode is not disposed (e.g., therein or thereon) and may surround the sensing area TSA (e.g., surround the periphery of the sensing area TSA).

[0122] The sensing area TSA of the sensing unit SENL may overlap the display area DA of the display unit DISL. The sensing peripheral area TPA of the sensing unit SENL may overlap the non-display area NDA of the display unit DISL.

[0123] The polarizing film PF may be disposed on the sensing unit SENL to prevent or substantially prevent the visibility of the image displayed by the display unit DISL from being reduced (e.g., lowered) due to reflection of external light. The polarizing film PF may include a linear polarizing plate and a retardation film, such as, for example, a quarter wavelength (λ / 4) plate. The retardation film may be disposed on the sensing unit SENL, and the linear polarizing plate may be disposed on the retardation film.

[0124] The cover window 100 may be disposed on the polarizing film PF. The cover window 100 may be connected to (eg, attached to) the polarizing film PF via a transparent adhesive member such as, for example, an optically clear adhesive (OCA).

[0125] The panel cover bottom PB may be disposed under the display panel 300. The panel cover bottom PB may be connected to (e.g., may be attached to) the bottom surface of the display panel 300 via an adhesive member. For example, the adhesive member may be a pressure sensitive adhesive (PSA). The panel cover bottom PB may include a light absorbing member for absorbing external light (e.g., light incident from the outside), a buffer member for absorbing external impact, and a heat dissipating member for dissipating (e.g., for effectively releasing) heat generated by the display panel 300.

[0126] The light absorbing member may be disposed below the display panel 300. The light absorbing member blocks or reduces the transmission of light, thereby preventing or substantially preventing elements disposed therebelow, such as the display circuit board 310, from being visible from above the display panel 300. The light absorbing member may include a light absorbing material, such as, for example, a black pigment, a black dye, or the like.

[0127] The buffer member may be disposed below the light absorbing member. The buffer member absorbs external impacts, thereby preventing or substantially preventing the display panel 300 from being destroyed or damaged by external impacts. The buffer member may be formed as a single layer or a multilayer film. For example, the buffer member may be formed of a polymer resin (e.g., such as polyurethane, polycarbonate, polypropylene, polyethylene, etc.), or may be formed of an elastic material (e.g., such as a foamed sponge obtained from rubber, a urethane material, an acrylic material, etc.).

[0128] The heat dissipation member may be disposed below the buffer member. The heat dissipation member may include a first heat dissipation layer including graphite or carbon nanotubes and a second heat dissipation layer formed as a thin film using a metal (e.g., such as copper, nickel, ferrite, silver, etc.) that can block electromagnetic waves and / or has excellent thermal conductivity.

[0129] like Figure 3A As shown in , in some embodiments, the flexible film 340 may be disposed on one side of the display panel 300. For example, the flexible film 340 may be disposed on the lower side of the display panel 300. The flexible film 340 may be bent toward the bottom of the display panel 300 and may be connected to (e.g., may be attached to) one side of the display circuit board 310, which may be disposed on the bottom surface of the panel bottom cover PB. The display circuit board 310 may be connected to the bottom surface of the panel bottom cover PB via a first adhesive member 391 (e.g., may be attached to and / or fixed to the bottom surface of the panel bottom cover PB). For example, the first adhesive member 391 may be a PSA.

[0130] like Figure 3BAs shown in , in other embodiments, the flexible film 340 may be omitted (e.g., may not be provided), and in this case, one side of the substrate SUB may be bent toward the bottom of the display panel 300. The side of the substrate SUB bent toward the bottom of the display panel 300 may be connected to (e.g., may be attached to) a display circuit board 310, and the display circuit board 310 may be provided on the bottom surface of the panel bottom cover PB.

[0131] like Figure 3A and Figure 3B As shown in , the sensing unit SENL may be directly disposed on the display unit DISL. Therefore, the thickness of the display device 10 may be reduced compared to a case where a separate touch panel including the sensing unit SENL is attached to the display unit DISL.

[0132] Figure 4 is shown with Figure 3A A plan view of the components associated with the display unit.

[0133] Reference Figure 4 , the display unit DISL may include a main display area MDA including a plurality of sub-pixels PX, a sub-display area SDA including a plurality of sub-pixels PX and a transmission portion, and a non-display area NDA that does not include the sub-pixels PX. For example, the sub-pixels PX, the scan lines SL, and the data lines DL may be arranged at the main display area MDA and the sub-display area SDA (e.g., in the main display area MDA and the sub-display area SDA or on the main display area MDA and the sub-display area SDA). The scan lines SL may be formed to be parallel to each other and may extend in a first direction (e.g., an X-axis direction). The data lines DL may be formed to be parallel to each other and may extend in a second direction (e.g., a Y-axis direction) that intersects the first direction (e.g., an X-axis direction). The scan lines SL may be connected to a scan driving unit (e.g., a scan driver) 380 at the non-display area NDA (e.g., in the non-display area NDA or on the non-display area NDA). The data line DL may be connected to a display pad (or referred to as “pad”) DP at (eg, in or on) the non-display area NDA via a fan-out line FL.

[0134] Each of the sub-pixels PX may be connected to at least one of the scan lines SL and to one of the data lines DL. Each of the sub-pixels PX may include a plurality of TFTs, a light emitting element, and a capacitor. The plurality of TFTs may include a driving transistor and at least one switching transistor. In response to a scan signal received from the scan line SL, the sub-pixel PX may receive a data voltage from the data line DL, and may emit light by supplying a driving current to the light emitting element of the sub-pixel PX according to the data voltage applied to the gate electrode of the driving transistor of the sub-pixel PX.

[0135] The non-display area NDA may be the entire area of ​​the display unit DISL except for the display area DA including the main display area MDA and the sub-display area SDA. The scan driving unit 380, the scan control line SCL, the fan-out line FL, and the sensing pads TP1 and TP2 may be disposed at the non-display area NDA (e.g., in or on the non-display area NDA). The scan driving unit 380 applies a scan signal to the scan line SL, and the fan-out line FL connects the data line DL and the display pad DP to each other. The sensing pads TP1 and TP2 may be connected to the sensing line.

[0136] The scan driving unit 380 may be connected to the display pad DP via a scan control line SCL, and thus may receive a scan control signal from the display driving unit 320 disposed on the flexible film 340. The scan driving unit 380 generates a scan signal according to the scan control signal, and provides the scan signal to the scan line SL. A sub-pixel PX to which a data voltage is to be provided may be selected by a scan signal from the scan driving unit 380, and the data voltage may be provided to the selected sub-pixel PX. The scan driving unit 380 is shown as being formed at the non-display area NDA (e.g., formed in or formed on the non-display area NDA) and at one side of the display area DA (e.g., on one side of the display area DA), for example, formed on the left side of the display area DA, but the present disclosure is not limited thereto. For example, in another embodiment, a plurality of scan driving units 380 may be disposed at the non-display area NDA (e.g., in or on the non-display area NDA), and the scan driving units 380 may be at opposite sides of the display area DA (e.g., on opposite sides of the display area DA), for example, on the left and right sides of the display area DA, respectively.

[0137] The display panel 300 may include a display pad DP connected to a data line DL (e.g., connected to the data line DL via a fan line FL) and a scan control line SCL, and sensing pads TP1 and TP2 connected to the sensing line. A display pad area DPA at which (in or on which) the display pad DP is disposed may be disposed between a first sensing pad area TPA1 and a second sensing pad area TPA2. The first sensing pad area TPA1 may include a first sensing pad TP1 disposed thereon, and the second sensing pad area TPA2 may include a second sensing pad TP2 disposed thereon. Figure 4As shown in , the display pad area DPA can be set in the middle (e.g., the center part) of one side (e.g., the lower side) of the display panel 300 (e.g., in the middle of one side of the display panel 300 or on the middle of one side of the display panel 300), the first sensing pad area TPA1 can be set at the left side of the display pad area DPA (e.g., in the left side of the display pad area DPA or on the left side of the display pad area DPA), and the second sensing pad area TPA2 can be set at the right side of the display pad area DPA (e.g., in the right side of the display pad area DPA or on the right side of the display pad area DPA).

[0138] Figure 5 It is shown in Figure 4 in the main display area (for example, in Figure 4 In the main display area or Figure 4 A plan view of pixels on the main display area). Figure 6 It is shown in Figure 4 In the secondary display area (for example, in Figure 4 in the secondary display area or in Figure 4 A plan view of pixels on the secondary display area).

[0139] Reference Figure 5 and Figure 6 The main display area MDA may include a plurality of sub-pixels PX1, PX2, and PX3 and a non-emission part NEA. The subsidiary display area SDA may include a plurality of sub-pixels PX1, PX2, and PX3, a non-emission part NEA, and a transmission part TA.

[0140] In the main display area MDA and the sub-display area SDA, one first subpixel PX1, two second subpixels PX2, and one third subpixel PX3 may be defined to form a pixel PXG. Each of the first subpixel PX1, the second subpixel PX2, and the third subpixel PX3 may include a light-emitting element that emits light. The light-emitting element may be an OLED including an organic light-emitting layer, a micro light-emitting diode (microLED), a quantum dot light-emitting diode (QLED) including a quantum dot light-emitting layer, an inorganic light-emitting diode (LED) including an inorganic semiconductor, and the like.

[0141] The first subpixel PX1 may include a first emission region that emits light of a first color, the second subpixel PX2 may include a second emission region that emits light of a second color, and the third subpixel PX3 may include a third emission region that emits light of a third color. For example, the first color, the second color, and the third color may be red, green, and blue, respectively, but the present disclosure is not limited thereto. In another example, the first subpixel PX1, the second subpixel PX2, and the third subpixel PX3 may emit light of the same or substantially the same color.

[0142] Figure 5 and Figure 6 It is shown that the subpixels PX1, PX2, and PX3 are formed to have a rectangular shape having a pair of short sides extending in a first direction (eg, X-axis direction) and a pair of long sides extending in a second direction (eg, Y-axis direction), but the present disclosure is not limited thereto.

[0143] The non-emitting portion NEA may be a region where the sub-pixels PX1, PX2, and PX3 are not disposed (e.g., in or on them). A driving unit (e.g., a pixel driver or a pixel driving layer) may be disposed at the non-emitting portion NEA (e.g., in or on the non-emitting portion NEA). The driving unit may include lines connected to the sub-pixels PX1, PX2, and PX3 and TFTs for driving the sub-pixels PX1, PX2, and PX3.

[0144] The non-emitting portion NEA may be disposed between the sub-pixels PX1, PX2, and PX3 at the main display area MDA (e.g., in the main display area MDA or on the main display area MDA). The non-emitting portion NEA may be disposed between the sub-pixels PX1, PX2, and PX3 at the sub-display area SDA (e.g., in the sub-display area SDA or on the sub-display area SDA), and between the sub-pixels PX1, PX2, and PX3 and the transmission portion TA.

[0145] The transmission portion TA may be a region through which incident light is transmitted. Due to the transmission portion TA, an object or background at the bottom (eg, bottom surface or rear) of the display panel 300 may be viewed from the top surface of the display panel 300 .

[0146] The transmission portion TA (e.g., each of the transmission portions TA) may be surrounded by the non-emission portion NEA (e.g., surround its periphery). The transmission portion TA (e.g., each of the transmission portions TA) may be surrounded by the sub-pixels PX1, PX2, and PX3 (e.g., at least partially surround its periphery). Figure 6 The transmission portion TA is shown to have a rectangular shape in a plan view, but the present disclosure is not limited thereto. For example, in another embodiment, the transmission portion TA may have another suitable quadrilateral shape other than the rectangular shape, a suitable polygonal shape other than the quadrilateral shape, a circular shape, an elliptical shape, an amorphous shape, etc.

[0147] like Figure 6As shown in FIG. 1 , since the sub-display area SDA includes the transmission portion TA, the sensors 740, 750, 760, and 770, which may be overlapped with the sub-display area SDA in a third direction (e.g., a thickness direction or a Z-axis direction), may receive light from the top surface of the display panel 300 through the transmission portion TA. Therefore, even when the sensors 740, 750, 760, and 770 are disposed below the display panel 300 (e.g., disposed at the bottom of the display panel 300), a reduction in the sensing capability of the sensors 740, 750, 760, and 770 may be prevented or reduced.

[0148] Figure 7 is shown with Figure 3A A plan view of elements associated with a sensing unit (eg, a sensing circuit or a sensing layer) of FIG.

[0149] Reference Figure 7 , the sensing unit SENL includes two types of sensor electrodes, for example, a driving electrode TE and a sensing electrode RE. The sensing unit SENL can be driven in a two-layer mutual capacitance manner by applying a driving signal to the driving electrode TE and sensing a voltage charged in a mutual capacitance (for example, between the driving electrode TE and the sensing electrode RE) through the sensing electrode RE, but the present disclosure is not limited thereto. For example, in other embodiments, the sensing unit SENL can be driven in a one-layer mutual capacitance manner or a self-capacitance manner.

[0150] For convenience, Figure 7 Sensor electrodes TE and RE, proximity sensing electrodes PE, dummy patterns DE, sensing lines TL1, TL2, RL, and PL, sensing pads TP1 and TP2, first to fifth guard lines GL1 to GL5, and first to third ground lines GRL1 to GRL3 are illustrated, but the present disclosure is not limited thereto.

[0151] The sensing unit SENL includes a sensing area TSA and a sensing peripheral area TPA, the sensing area TSA is used to sense a touch input from a user, and the sensing peripheral area TPA is disposed at the periphery of the sensing area TSA (e.g., in the periphery of the sensing area TSA or on the periphery of the sensing area TSA). The sensing area TSA may overlap with the display area DA of the display unit DISL, and the sensing peripheral area TPA may overlap with the non-display area NDA of the display unit DISL. The sensing area TSA may include a first sensing area TSA1 overlapping with the main display area MDA of the display unit DISL and a second sensing area TSA2 overlapping with the sub-display area SDA of the display area DA.

[0152] The second sensing area TSA2 may include sensor electrodes TE and RE, a proximity sensing electrode PE, and a dummy pattern DE. The proximity sensing electrode PE and the dummy pattern DE may be surrounded by (e.g., surrounding the periphery of) the sensor electrodes TE and RE. The sensor electrodes TE and RE may include a driving electrode TE and a sensing electrode RE. The driving electrode TE or the sensing electrode RE may surround the proximity sensing electrode PE (e.g., surrounding the periphery of the proximity sensing electrode PE), and the other electrodes among the driving electrode TE and the sensing electrode RE may surround the dummy pattern DE (e.g., surrounding the periphery of the dummy pattern DE). In other words, the proximity sensing electrode PE may be surrounded by (e.g., surrounding the periphery of) the driving electrode TE or the sensing electrode RE, and the dummy pattern DE may be surrounded by (e.g., surrounding the periphery of) the other electrodes among the driving electrode TE and the sensing electrode RE that do not surround the proximity sensing electrode PE (e.g., do not surround the periphery of the proximity sensing electrode PE). For example, as Figure 7 As shown in , the proximity sensing electrode PE may be surrounded by the sensing electrode RE (e.g., around its periphery), and the dummy pattern DE may be surrounded by the driving electrode TE (e.g., around its periphery). In another example, when the proximity sensing electrode PE is surrounded by the driving electrode TE (e.g., around its periphery), the dummy pattern DE may be surrounded by the sensing electrode RE (e.g., around its periphery). The dummy pattern DE may be electrically floating. In other words, no voltage may be applied to the dummy pattern DE.

[0153] The first sensing area TSA1 may include sensor electrodes TE and RE and dummy patterns DE surrounded by the sensor electrodes TE and RE. The dummy patterns DE may be surrounded by the drive electrodes TE or the sensing electrodes RE. For example, in some embodiments, in the first sensing area TSA1, some of the dummy patterns DE may be surrounded by the drive electrodes TE, and other of the dummy patterns DE may be surrounded by the sensing electrodes RE. The dummy patterns DE may be electrically floating. In other words, no voltage may be applied to the dummy patterns DE.

[0154] Figure 7 It is illustrated that the driving electrodes TE and the sensing electrodes RE have a rhombus shape in a plan view, but the present disclosure is not limited thereto.

[0155] The sensing electrodes RE may be arranged along a first direction (e.g., an X-axis direction) and may be electrically connected to each other. The driving electrodes TE may be arranged along a second direction (e.g., a Y-axis direction) intersecting the first direction (e.g., the X-axis direction) and may be electrically connected to each other. The driving electrode TE may be electrically isolated from the sensing electrode RE. The driving electrode TE may be arranged to be spaced apart from the sensing electrode RE. The dummy pattern DE may be electrically floating. In order to electrically isolate the driving electrode TE from the sensing electrode RE at the intersection area between the driving electrode TE and the sensing electrode RE, the driving electrodes TE adjacent to each other in the second direction (e.g., the Y-axis direction) may be connected to each other via a first bridge BE1 (e.g., as shown in FIG. 1 ). Figure 8 ), the sensing electrodes RE adjacent to each other in the first direction (eg, the X-axis direction) may be connected to each other via the second bridge BE2 (eg, as shown in FIG. Figure 8 ).

[0156] The dummy pattern DE may be electrically isolated from the driving electrode TE and the sensing electrode RE. The driving electrode TE, the sensing electrode RE, and the dummy pattern DE may be disposed to be spaced apart from each other. The dummy pattern DE may be electrically floating.

[0157] The proximity sensing electrode PE may be electrically isolated from the drive electrode TE and the sensing electrode RE. The drive electrode TE, the sensing electrode RE, and the proximity sensing electrode PE may be arranged to be spaced apart from each other. The proximity sensing electrodes PE may be arranged along a first direction (e.g., an X-axis direction) and may be parallel to each other. In order to electrically isolate the proximity sensing electrode PE from the drive electrode TE and the sensing electrode RE, adjacent proximity sensing electrodes PE in pairs in the first direction (e.g., the X-axis direction) may be connected to each other via a third bridge BE3, for example, as Fig.13 as shown in .

[0158] Due to the proximity sensing electrode PE and the dummy pattern DE, the light emitting element layer EML (see Fig.12 ) of the second electrode 173 (see Fig.12 ) and the parasitic capacitance between the driving electrode TE can be reduced, and the light emitting element layer EML (see Fig.12 ) of the second electrode 173 (see Fig.12) and the parasitic capacitance between the sensing electrode RE can be reduced. When the parasitic capacitance is reduced, the mutual capacitance between the driving electrode TE and the sensing electrode RE can be enhanced, and the speed of charging the mutual capacitance can be enhanced. However, because the area of ​​the driving electrode TE and the sensing electrode RE is reduced due to the presence of the proximity sensing electrode PE and the dummy pattern DE, the mutual capacitance is also reduced. In this case, the voltage charged in the mutual capacitance is affected by noise (for example, it is easily affected by noise). Therefore, the size of the proximity sensing electrode PE and the dummy pattern DE can be determined (for example, it can be set considering the parasitic capacitance and the mutual capacitance) in consideration of the parasitic capacitance and the mutual capacitance.

[0159] The sensing lines TL1, TL2, RL, and PL may be disposed at (e.g., in or on) the sensing peripheral area TPA. The sensing lines TL1, TL2, RL, and PL may include an input sensing line RL connected to the sensing electrode RE, a first driving line TL1 and a second driving line TL2 connected to the driving electrode TE, and a proximity sensing line PL connected to the proximity sensing electrode PE.

[0160] Set at one side of the sensing area TSA (for example, Figure 7 The sensing electrode RE disposed at the right side of the sensing area TSA (for example, disposed in or on one side of the sensing area TSA) may be connected to the input sensing line RL. For example, the sensing electrode RE disposed most to the right on the sensing area TSA may be connected to the input sensing line RL. The input sensing line RL may be connected to the second sensing pad TP2. Therefore, the sensing driving unit 330 may be electrically connected to the sensing electrode RE.

[0161] Set on the other side of the sensing area TSA (for example, Figure 7 The driving electrode TE disposed at the lower side of the sensing area TSA (eg, in or on the other side of the sensing area TSA) may be connected to the first driving line TL1, which is disposed at the opposite side of the other side of the sensing area TSA (eg, Figure 7 The driving electrode TE at the upper side of the sensing area TSA (eg, in or on the opposite side of the other side of the sensing area TSA) may be connected to the second driving line TL2. Figure 7As shown in , the lowermost drive electrode TE1 may be connected to the first drive line TL1, and the uppermost drive electrode TE2 may be connected to the second drive line TL2. The second drive line TL2 may be connected to the uppermost drive electrode TE2 at the upper side of the sensing area TSA (e.g., in the upper side of the sensing area TSA or on the upper side of the sensing area TSA), and may extend in the second direction (e.g., the Y-axis direction) on the sensing peripheral area TPA at the left side of the sensing area TSA. The first drive line TL1 and the second drive line TL2 may be connected to the first sensing pad TP1. Therefore, the sensing drive unit 330 may be electrically connected to the drive electrode TE. Because the drive electrode TE is connected to the drive lines TL1 and TL2 at opposite sides of the sensing area TSA (e.g., in the opposite sides of the sensing area TSA or on the opposite sides of the sensing area TSA) to receive the sensing drive signal TD (see Figure 8 ), so the difference between the sensing driving voltage applied to the uppermost driving electrode TE2 and the sensing driving voltage applied to the lowermost driving electrode TE1 due to the RC delay in the sensing driving signal TD can be prevented or reduced.

[0162] The proximity sensing electrode PE at the second sensing area TSA2 (e.g., in or on the second sensing area TSA2) may be connected to the proximity sensing line PL. The proximity sensing electrodes PE at multiple rows (e.g., in or on multiple rows) may be connected to the proximity sensing line PL. The proximity sensing line PL may be connected to the second sensing pad TP2. Therefore, the sensing drive unit 330 may be electrically connected to the proximity sensing electrode PE.

[0163] The first protection line GL1 may be disposed outside the outermost input sensing line RL (eg, between Figure 7 The first ground line GRL1 may be disposed outside the first guard line GL1 (eg, in the outer side of the outermost input sensing line RL or on the outer side of the outermost input sensing line RL). Figure 7 (to the right in the middle) (for example, in the outer side of the first protection line GL1 or on the outer side of the first protection line GL1). Figure 7 As shown in , the first guard line GL1 can be set at the right side of the rightmost input sensing line RL (for example, in the right side of the rightmost input sensing line RL or on the right side of the rightmost input sensing line RL), and the first ground line GRL1 can be set at the right side of the first guard line GL1 (for example, in the right side of the first guard line GL1 or on the right side of the first guard line GL1).

[0164] The second protection line GL2 may be disposed between the innermost input sensing line RL and the innermost first driving line TL1. Figure 7As shown in , the innermost input sensing line RL may be the leftmost input sensing line RL, and the innermost first driving line TL1 may be the rightmost first driving line TL1. The second protection line GL2 may also be disposed between the innermost first driving line TL1 and the second ground line GRL2.

[0165] The third guard line GL3 may be disposed between the innermost input sensing line RL and the second ground line GRL2 The second ground line GRL2 may be connected to the rightmost first sensing pad TP1 and the leftmost second sensing pad TP2.

[0166] The fourth protection line GL4 may be disposed outside the outermost second driving line TL2 (eg, Figure 7 (eg, in or on the outer side of the outermost second driving line TL2). Figure 7 As shown in FIG. 1 , the fourth guard line GL4 may be disposed at (eg, in or on) the left side of the outermost second driving line TL2 .

[0167] The third ground line GRL3 may be disposed outside the fourth guard line GL4 (eg, Figure 7 (eg, in or on the outer side of the fourth protection line GL4). Figure 7 As shown in , the fourth guard line GL4 can be set at the left side and upper side of the outermost second driving line TL2 (for example, in the left side and upper side of the outermost second driving line TL2 or on the left side and upper side of the outermost second driving line TL2), and the third ground line GRL3 can be set at the left side and upper side of the fourth guard line GL4 (for example, in the left side and upper side of the fourth guard line GL4 or on the left side and upper side of the fourth guard line GL4).

[0168] The fifth protection line GL5 may be disposed at the inner side of the innermost second driving line TL2 (eg, Figure 7 (eg, in or on the inner side of the innermost second driving line TL2). Figure 7 As shown in FIG. 5 , the fifth guard line GL5 may be disposed between the innermost second driving line TL2 and the sensor electrodes TE and RE.

[0169] A ground voltage may be applied to the first to third ground lines GRL1 to GRL3 . A ground voltage may also be applied to the first to fifth guard lines GL1 to GL5 .

[0170] like Figure 7As shown in , pairs of adjacent (e.g., adjacent in the second direction or the Y-axis direction) driving electrodes TE are electrically connected to each other, and pairs of adjacent (e.g., adjacent in the second direction or the Y-axis direction) sensing electrodes RE are electrically isolated from each other. In addition, pairs of adjacent (e.g., adjacent in the first direction or the X-axis direction) driving electrodes TE are electrically isolated from each other, and pairs of adjacent (e.g., adjacent in the first direction or the X-axis direction) sensing electrodes RE are electrically connected to each other. Therefore, mutual capacitance can be formed at an area adjacent to the driving electrode TE and the sensing electrode RE (e.g., in an area adjacent to the driving electrode TE and the sensing electrode RE or on an area adjacent to the driving electrode TE and the sensing electrode RE).

[0171] like Figure 7 As shown in , because the first guard line GL1 is set between the outermost input sensing line RL and the first ground line GRL1, the first guard line GL1 can minimize or reduce the influence of the voltage change in the first ground line GRL1 on the outermost input sensing line RL. Because the second guard line GL2 is set between the innermost input sensing line RL and the innermost first driving line TL1, the second guard line GL2 can minimize or reduce the influence of the voltage change in the innermost first driving line TL1 on the innermost input sensing line RL. Because the third guard line GL3 is set between the innermost input sensing line RL and the second ground line GRL2, the third guard line GL3 can minimize or reduce the influence of the voltage change in the second ground line GRL2 on the innermost input sensing line RL. Because the fourth guard line GL4 is set between the outermost second driving line TL2 and the third ground line GRL3, the fourth guard line GL4 can minimize or reduce the influence of the voltage change in the third ground line GRL3 on the outermost second driving line TL2. Because the fifth guard line GL5 is disposed between the innermost second driving line TL2 and the sensor electrodes TE and RE, the fifth guard line GL5 may minimize or reduce the influence of a voltage change in the innermost second driving line TL2 on the sensor electrodes TE and RE.

[0172] Figure 8 shows the connection to the Figure 7 At the first sensing region (e.g., at Figure 7 in the first sensing region or in Figure 7 An exemplary sensing driving unit (eg, a sensing driver) of driving electrodes and sensing electrodes disposed on a first sensing region (on a first sensing region).

[0173] For convenience, Figure 8A column of driving electrodes TE electrically connected to each other in a second direction (e.g., Y-axis direction) at the first sensing area TSA1 (e.g., in the first sensing area TSA1 or on the first sensing area TSA1) and a row of sensing electrodes RE electrically connected to each other in a first direction (e.g., X-axis direction) at the first sensing area TSA1 (e.g., in the first sensing area TSA1 or on the first sensing area TSA1) are shown.

[0174] Reference Figure 8 The sensing driving unit (eg, sensing driver) 330 may include a driving signal output portion (eg, driving signal generator) 331, a first sensing portion (eg, a first sensing circuit) 332, and a first analog-to-digital conversion portion (eg, a first analog-to-digital converter) 333.

[0175] The driving signal output part 331 may output the sensing driving signal TD to the driving electrode TE via the first driving line TL1 and via the second driving line TL2 . The sensing driving signal TD may include a plurality of pulses each having a pulse amplitude VD.

[0176] The driving signal output part 331 may output the sensing driving signal TD to the driving lines TL1 and TL2 in a defined (eg, predefined) order. Figure 7 The driving signal output unit 331 may output the sensing driving signal TD to the driving electrodes TE in a sequential order from a column of driving electrodes TE adjacent to the left side of the sensing area TSA (e.g., the first column) to a column of driving electrodes TE adjacent to the right side of the sensing area TSA (e.g., the last column).

[0177] The first sensing part 332 senses a voltage charged in the first mutual capacitance Cm1 via an input sensing line RL connected to the sensing electrode RE. The first mutual capacitance Cm1 may be formed between the driving electrode TE and the sensing electrode RE.

[0178] The first sensing section 332 may include a first operational amplifier OA1, a first feedback capacitor Cfb1, and a first reset switch RSW1. The first operational amplifier OA1 may include a first input terminal "-", a second input terminal "+", and an output terminal "out". The first input terminal "-" of the first operational amplifier OA1 may be connected to an input sensing line RL, the second input terminal "+" of the first operational amplifier OA1 may receive an initialization voltage VREF, and the output terminal "out" of the first operational amplifier OA1 may be connected to a first storage capacitor Cs1. The first storage capacitor Cs1 may be connected between the output terminal "out" of the first operational amplifier OA1 and a ground (e.g., a ground source) to store the output voltage Vout1 of the first operational amplifier OA1. The first feedback capacitor Cfb1 and the first reset switch RSW1 may be connected in parallel between the first input terminal "-" and the output terminal "out" of the first operational amplifier OA1. The first reset switch RSW1 controls the connection of the ends (e.g., both ends) of the first feedback capacitor Cfb1. For example, when the first reset switch RSW1 is turned on so that the ends of the first feedback capacitor Cfb1 are connected to each other, the first feedback capacitor Cfb1 may be reset.

[0179] The output voltage Vout1 of the first operational amplifier OA1 can be defined by the following equation (1).

[0180] [Equation (1)]

[0181]

[0182] Referring to equation (1), Vout1 refers to the output voltage of the first operational amplifier OA1, Cm1 refers to the first mutual capacitance, Cfb1 refers to the capacitance of the first feedback capacitor Cfb1, and Vt1 refers to the voltage charged in the first mutual capacitance Cm1.

[0183] The first analog-to-digital conversion part 333 may convert the output voltage Vout1 stored in the first storage capacitor Cs1 into first digital data and may output the first digital data. The first analog-to-digital conversion part 333 may output the first digital data to the main processor 710 as touch sensing data.

[0184] As mentioned above Figure 8 As described, at the first sensing area TSA1 (eg, in or on the first sensing area TSA1 ), the presence of a touch input from a user may be detected by sensing a voltage charged in the first mutual capacitance Cm1 .

[0185] Fig. 9 shows the connection to the Figure 7 At the second sensing area (e.g., at Figure 7in the second sensing region or in Figure 7 1. The present invention relates to a driving electrode (on a second sensing region) disposed on the sensing electrode, the sensing electrode, and an exemplary sensing driving unit (eg, a sensing driver) close to the sensing electrode.

[0186] For convenience, Fig. 9 Shown are a column of driving electrodes TE electrically connected to each other in a second direction (e.g., Y-axis direction) at the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2), a row of sensing electrodes RE electrically connected to each other in a first direction (e.g., X-axis direction) at the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2), and a row of proximity sensing electrodes PE electrically connected to each other in the first direction (e.g., X-axis direction) at the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2).

[0187] Reference Fig. 9 , the sensing driving unit (e.g., sensing driver) 330 may include a driving signal output section (e.g., driving signal generator) 331, a first sensing section (e.g., a first sensing circuit) 332, a first analog-to-digital conversion section (e.g., a first analog-to-digital converter) 333, a second sensing section (e.g., a second sensing circuit) 334, and a second analog-to-digital conversion section (e.g., a second analog-to-digital converter) 335. The driving signal output section 331, the first sensing section 332, and the first analog-to-digital conversion section 333 may be connected to a reference Figure 8 Their respective corresponding parts described are the same or substantially the same. Therefore, their redundant descriptions may not be repeated.

[0188] The second sensing unit 334 senses the voltage charged in the second mutual capacitance Cm2 via the proximity sensing line PL connected to the proximity sensing electrode PE. The second sensing unit 334 may include a second operational amplifier OA2, a second feedback capacitor Cfb2, and a second reset switch RSW2. The second operational amplifier OA2 may include a first input terminal "-", a second input terminal "+", and an output terminal "out". The first input terminal "-" of the second operational amplifier OA2 may be connected to the proximity sensing line PL, the initialization voltage VREF may be provided to the second input terminal "+" of the second operational amplifier OA2, and the output terminal "out" of the second operational amplifier OA2 may be connected to the second storage capacitor Cs2. The second storage capacitor Cs2 may be connected between the output terminal "out" of the second operational amplifier OA2 and the ground (e.g., the ground source) to store the output voltage Vout2 of the second operational amplifier OA2. The second feedback capacitor Cfb2 and the second reset switch RSW2 may be connected in parallel between the first input terminal "-" and the output terminal "out" of the second operational amplifier OA2. The second reset switch RSW2 controls the connection of the ends (e.g., both ends) of the second feedback capacitor Cfb2. For example, when the second reset switch RSW2 is turned on so that the ends of the second feedback capacitor Cfb2 are connected to each other, the second feedback capacitor Cfb2 may be reset.

[0189] The output voltage Vout2 of the second operational amplifier OA2 can be defined by the following equation (2).

[0190] [Equation (2)]

[0191]

[0192] Referring to equation (2), Vout2 refers to the output voltage of the second operational amplifier OA2, Cm2 refers to the second mutual capacitance, Cfb2 refers to the capacitance of the second feedback capacitor Cfb2, and Vt2 refers to the voltage charged in the second mutual capacitance Cm2.

[0193] The second analog-to-digital conversion part 335 may convert the output voltage Vout2 stored in the second storage capacitor Cs2 into second digital data and may output the second digital data. The second analog-to-digital conversion part 335 may output the second digital data to the main processor 710 as proximity sensing data.

[0194] As mentioned above Fig. 9 As described, at the second sensing area TSA2 (for example, in or on the second sensing area TSA2), the presence of touch input from the user can be detected by sensing the voltage charged in the first mutual capacitance Cm1, and the presence of proximity input from the user can be detected by sensing the voltage charged in the second mutual capacitance Cm2.

[0195] Because the presence of proximity input from the user can be detected by applying the sensing drive signal TD concurrently (e.g., simultaneously or at the same time) to the multiple column drive electrodes TE and sensing the voltage charged in the second mutual capacitance Cm2 via the multiple rows of proximity sensing electrodes PE, the second mutual capacitance Cm2 can be greater than the first mutual capacitance Cm1.

[0196] Fig.10 It is shown Figure 7 FIG. 1 is a plan view of an exemplary driving electrode, an exemplary sensing electrode, and an exemplary dummy pattern at a first sensing region of FIG.

[0197] For convenience, Fig.10 A pair of adjacent (eg, adjacent in a first direction or the X-axis direction) sensing electrodes RE and a pair of adjacent (eg, adjacent in a second direction or the Y-axis direction) driving electrodes TE are shown.

[0198] Reference Fig.10 , the driving electrode TE, the sensing electrode RE, and the dummy pattern DE may have a quadrilateral shape in a plan view, but the present disclosure is not limited thereto. In an embodiment, the driving electrode TE, the sensing electrode RE, and the dummy pattern DE may have a mesh structure or a fishnet structure in a plan view. In this case, the driving electrode TE, the sensing electrode RE, the dummy pattern DE, the plurality of first bridges BE1, and the second bridges BE2 may have the same or substantially the same mesh hole size as each other.

[0199] The sensing electrodes RE may be arranged along a first direction (e.g., an X-axis direction) and may be electrically connected to each other. The driving electrodes TE may be arranged along a second direction (e.g., a Y-axis direction) and may be electrically connected to each other. The dummy pattern DE may be arranged to be surrounded by the driving electrode TE or the sensing electrode RE (e.g., surrounding its periphery). The driving electrode TE, the sensing electrode RE, and the dummy pattern DE may be electrically isolated from each other. The driving electrode TE, the sensing electrode RE, and the dummy pattern DE may be arranged to be spaced apart from each other.

[0200] In order to electrically isolate the sensing electrode RE and the driving electrode TE from each other at the intersection region between the sensing electrode RE and the driving electrode TE, the driving electrodes TE adjacent to each other in the second direction (e.g., the Y-axis direction) may be connected to each other via the first bridge BE1, and the sensing electrodes RE adjacent to each other in the first direction (e.g., the X-axis direction) may be connected to each other via the second bridge BE2. The first bridge BE1 may be formed at a layer different from that of the driving electrode TE (e.g., in a layer different from that of the driving electrode TE or on a layer different from that of the driving electrode TE), and may be connected to the driving electrode TE via the first contact hole CNT1. For example, the first bridge BE1 may be provided on the second buffer film BF2 (e.g., see Fig.12 ), the driving electrode TE may be disposed on the first sensor insulating film TINS1 (eg, see Fig.12 ).

[0201] The first bridge BE1 may include at least one bent portion (eg, may be formed to be bent at least once). Fig.10 The first bridge BE1 is shown to be bent in the shape of an angle bracket (e.g., "<" and ">"), but the shape of the first bridge BE1 is not limited thereto. Because the driving electrodes TE adjacent to each other in the second direction (e.g., the Y-axis direction) are connected to each other through the plurality of first bridges BE1, even if one of the first bridges BE1 is short-circuited, the driving electrodes TE can be stably connected to each other. Fig.10 It is shown that the driving electrodes TE are connected to each other through two first bridges BE1 , but the number of the first bridges BE1 is not limited thereto.

[0202] The second bridge BE2 may be formed at the same layer as that of the sensing electrodes RE (e.g., in the same layer as that of the sensing electrodes RE or on the same layer as that of the sensing electrodes RE), and may extend from the sensing electrodes RE (e.g., may extend between adjacent ones of the sensing electrodes RE). The sensing electrodes RE and the second bridge BE2 may include the same or substantially the same material (e.g., may be formed of the same or substantially the same material). For example, the sensing electrodes RE and the second bridge BE2 may be disposed on the first sensor insulating film TINS1 (e.g., see Fig.12 ).

[0203] The dummy pattern DE may be disposed on the first sensor insulating film TINS1 and may be spaced apart from the driving electrode TE and the sensing electrode RE.

[0204] As mentioned above Fig.10As described, the first bridge BE1 may be disposed on the second buffer film BF2, and the driving electrode TE, the sensing electrode RE, the dummy pattern DE, and the second bridge BE2 may be disposed on the first sensor insulating film TINS1. Therefore, the driving electrode TE and the sensing electrode RE may be electrically isolated from each other at the intersection region between the driving electrode TE and the sensing electrode RE, the sensing electrodes RE may be electrically connected to each other in a first direction (e.g., the X-axis direction), and the driving electrodes TE may be electrically connected to each other in a second direction (e.g., the Y-axis direction).

[0205] Fig.11A yes Fig.10 An enlarged plan view of area A.

[0206] Reference Fig.11A The driving electrodes TE, the sensing electrodes RE, the plurality of first bridges BE1 and the second bridges BE2 may be formed to have a grid structure or a fishnet structure in a plan view. The dummy pattern DE may also be formed to have a grid or a fishnet structure in a plan view. The sensing unit (e.g., sensing circuit or sensing layer) SENL including the driving electrodes TE and the sensing electrodes RE is directly formed on the thin film encapsulation layer TFEL (e.g., see Fig.12 ), because the second electrode 173 of the light emitting element layer EML is too close to the driving electrode TE and the sensing electrode RE of the sensing unit SENL, a large parasitic capacitance is formed between the second electrode 173 of the light emitting element layer EML and the driving electrode TE (or the sensing electrode RE) of the sensing unit SENL. Because the parasitic capacitance may be proportional to the overlapping area of ​​the second electrode 173 of the light emitting element layer EML and the driving electrode TE (or the sensing electrode RE) of the sensing unit SENL, the driving electrode TE and the sensing electrode RE of the sensing unit SENL may be formed to have a mesh structure or a fishnet structure in a plan view.

[0207] Because the driving electrode TE, the sensing electrode RE, the dummy pattern DE, and the second bridge BE2 may be formed at the same layer as each other (e.g., in the same layer as each other or on the same layer as each other), the driving electrode TE, the sensing electrode RE, the dummy pattern DE, and the second bridge BE2 may be arranged to be spaced apart from each other. In this case, gaps or openings may be formed between the driving electrode TE and the sensing electrode RE, between the driving electrode TE and the second bridge BE2, between the driving electrode TE and the dummy pattern DE, and between the sensing electrode RE and the dummy pattern DE. For convenience, Fig.11A In FIG. 1 , boundaries between the driving electrode TE and the sensing electrode RE, between the driving electrode TE and the second bridge BE2, between the driving electrode TE and the dummy pattern DE, and between the sensing electrode RE and the dummy pattern DE are indicated by dotted lines.

[0208] The first bridge BE1 may be connected to the driving electrode TE via the first contact hole CNT1. The first end of each of a pair of corresponding first bridges BE1 may be connected to one of a pair of adjacent (e.g., adjacent in the second direction or the Y-axis direction) driving electrodes TE via the first contact hole CNT1, and the second end of each of a pair of corresponding first bridges BE1 may be connected to the other of the pair of adjacent driving electrodes TE via the other first contact hole CNT1. Fig.11A As shown in , the first bridge BE1 may overlap with the drive electrode TE and the sensing electrode RE, but the present disclosure is not limited thereto. In another embodiment, the first bridge BE1 may overlap with the second bridge BE2 without overlapping with the sensing electrode RE. In yet another embodiment, the first bridge BE1 may overlap with the sensing electrode RE and the second bridge BE2. Because the first bridge BE1 is formed at a layer different from that of the drive electrode TE (for example, in a layer different from that of the drive electrode TE or on a layer different from that of the drive electrode TE), even if the first bridge BE1 overlaps with the sensing electrode RE and / or the second bridge BE2, the first bridge BE1 will not be short-circuited with the sensing electrode RE and / or the second bridge BE2.

[0209] The second bridge BE2 may be disposed between the sensing electrodes RE. The second bridge BE2 may be formed at the same layer as that of the sensing electrodes RE (e.g., in the same layer as that of the sensing electrodes RE or on the same layer as that of the sensing electrodes RE), and may extend from the two sensing electrodes RE. Therefore, the second bridge BE2 may be connected to the sensing electrodes RE without using contact holes.

[0210] The emission regions R, G and B of the subpixel include a first emission region R for emitting light of a first color, a second emission region G for emitting light of a second color and a third emission region B for emitting light of a third color. The first color, the second color and the third color may be red, green and blue, respectively. Fig.11A It is shown that the first emission region R corresponds to (for example, may be) the emission region of the first sub-pixel PX1, the second emission region G corresponds to (for example, may be) the emission region of the second sub-pixel PX2, and the third emission region B corresponds to (for example, may be) the emission region of the third sub-pixel PX3, but the present disclosure is not limited thereto. Fig.11AAs shown in , each of the first emission region R, the second emission region G, and the third emission region B may have a quadrilateral shape in a plan view, but the present disclosure is not limited thereto. For example, in other example embodiments, the first emission region R, the second emission region G, and the third emission region B may have any suitable shape in a plan view, such as a polygonal shape other than a quadrilateral shape, a circular shape, an elliptical shape, etc. Although Fig.11A It is shown that the third emission region B has the largest size (eg, the largest area in the plan view), and the second emission region G has the smallest size (eg, the smallest area in the plan view), but the present disclosure is not limited thereto.

[0211] The pixel PXG may refer to a group of sub-pixels that may represent a gray scale (eg, a gray level). Fig.11A It is shown that a single pixel PXG includes one first emission region R, two second emission regions G, and one third emission region B, and the first emission region R, the second emission region G, and the third emission region B are arranged to form a square shape or a diamond shape in a plan view. However, the present disclosure is not limited thereto. For example, in Fig. 11B In the embodiment shown in , the pixel PXG may include a first emission region R, a second emission region G, and a third emission region B, and the first emission region R, the second emission region G, and the third emission region B may be arranged in a strip form (e.g., in a line) along a first direction (e.g., an X-axis direction). In another example, in Fig. 11C In the embodiment shown in , the pixel PXG may include a first emission region R, a second emission region G, and a third emission region B, and the third emission region B may extend more (e.g., may extend longer) in the second direction (e.g., the Y-axis direction) than in the first direction (e.g., the X-axis direction), the third emission region B may extend more (e.g., may extend longer) than each of the first emission region R and the second emission region G in the second direction, and the first emission region R and the second emission region G may be disposed on one side of the third emission region B (e.g., one side in the first direction or the X-axis direction). In this case, each of the first emission region R and the second emission region G may have a square shape or a substantially square shape in a plan view, or each of the first emission region R and the second emission region G may extend more (e.g., may extend longer) in the first direction (e.g., the X-axis direction) than in the second direction (e.g., the Y-axis direction).

[0212] Because the driving electrode TE, the sensing electrode RE, the dummy pattern DE, the plurality of first bridges BE1 and the second bridge BE2 may be formed to have a mesh structure or a fishnet structure in a plan view, the emission regions R, G and B may not overlap with the driving electrode TE, the sensing electrode RE, the dummy pattern DE, the first bridge BE1 and the second bridge BE2. Therefore, it is possible to prevent or substantially prevent light emitted from the emission regions R, G and B from being blocked by the driving electrode TE, the sensing electrode RE, the dummy pattern DE, the first bridge BE1 and / or the second bridge BE2, and as a result, it is possible to prevent or reduce a reduction in the brightness of light emitted from the emission regions R, G and B.

[0213] Fig.12 is along Fig.11A A cross-sectional view taken along line II'.

[0214] In more detail, Fig.12 The connection structure between the driving electrode TE and the first bridge BE1 of the sensing unit (eg, sensing circuit or sensing layer) SENL is shown.

[0215] Reference Fig.12 The display unit DISL is formed on the substrate SUB, and the display unit DISL includes a first buffer film BF1, a TFT layer TFTL, a light emitting element layer EML, and a thin film encapsulation layer TFEL. The TFT layer TFTL may include a TFT 120, a gate insulating film 130, an interlayer insulating film 140, a passivation film 150, and a planarization film 160.

[0216] The light blocking layer BML may be formed on the surface of the substrate SUB. The light blocking layer BML may be a layer for blocking light incident on the active layer 121, and may overlap the active layer 121. The light blocking layer BML may be formed as a single-layer film or a multi-layer film including molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu), and / or alloys thereof.

[0217] The first buffer film BF1 may be formed on the light blocking layer BML. The first buffer film BF1 may be formed on the surface of the substrate SUB to protect the TFT 120 and the organic light emitting layer 172 of the light emitting element layer EML from moisture or the like that may penetrate the substrate SUB. The first buffer film BF1 may include a plurality of inorganic films alternately stacked with each other. For example, the first buffer film BF1 may be formed as a multilayer film in which one or more inorganic films selected from a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer are alternately stacked with each other. However, the present disclosure is not limited thereto, and the first buffer film BF1 may be omitted (e.g., may not be provided).

[0218] A TFT layer TFTL including a TFT 120 is formed on the first buffer film BF1 . The TFT 120 includes an active layer 121 , a gate electrode 122 , a source electrode 123 , and a drain electrode 124 . Fig.12 The TFT 120 is shown to have a top gate structure in which the gate electrode 122 is disposed above the active layer 121, but the present disclosure is not limited thereto. For example, in other embodiments, the TFT 120 may be formed to have a bottom gate structure in which the gate electrode 122 is disposed below the active layer 121 or a double gate structure in which the gate electrode (e.g., including a plurality of gate electrodes) 122 is disposed both above and below the active layer 121.

[0219] The active layer 121 is formed on the first buffer film BF1. The active layer 121 may include polycrystalline silicon, single crystal silicon, low temperature polycrystalline silicon, amorphous silicon, or an oxide semiconductor. For example, the oxide semiconductor may include a binary compound (AB) having (e.g., containing) such as indium (In), zinc (Zn), gallium (Ga), tin (Sn), Ti, Al, hafnium (Hf), zirconium (Zr), and / or magnesium (Mg). x ), ternary compounds (AB x C y ) or quaternary compound (AB x C y D z For example, the active layer 121 may include indium tin zinc oxide (ITZO) or indium gallium zinc oxide (IGZO). A light blocking layer BML for blocking external light incident on the active layer 121 may be formed between the first buffer film BF1 and the active layer 121 .

[0220] The gate insulating film 130 may be formed on the active layer 121. The gate insulating film 130 may be formed as an inorganic film such as, for example, a silicon nitride layer, a silicon nitride oxide layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. Fig.12 It is shown that the gate insulating film 130 is formed at the overlapping region of the gate insulating film 130 and the gate electrode 122 (for example, in the overlapping region of the gate insulating film 130 and the gate electrode 122 or on the overlapping region of the gate insulating film 130 and the gate electrode 122) and is formed at the non-overlapping region other than the overlapping region (for example, in the non-overlapping region other than the overlapping region or on the non-overlapping region other than the overlapping region), but the present disclosure is not limited thereto. For example, in another embodiment, the gate insulating film 130 may be formed at the overlapping region of the gate insulating film 130 and the gate electrode 122 (for example, in the overlapping region of the gate insulating film 130 and the gate electrode 122 or on the overlapping region of the gate insulating film 130 and the gate electrode 122), and may not be formed at the non-overlapping region (for example, may be omitted from the non-overlapping region).

[0221] The gate electrode 122 and the scan line SL may be formed on the gate insulating film 130. The gate electrode 122 and the scan line SL may be formed as a single layer or a multilayer film including Mo, Al, Cr, Au, Ti, Ni, Nd, Cu, and / or alloys thereof.

[0222] The interlayer insulating film 140 may be formed on the gate electrode 122 and the scan line SL. The interlayer insulating film 140 may include a first interlayer insulating film 141 and a second interlayer insulating film 142. The first interlayer insulating film 141 and the second interlayer insulating film 142 may be formed, for example, as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.

[0223] The source electrode 123 and the drain electrode 124 may be formed on the interlayer insulating film 140. The source electrode 123 and the drain electrode 124 may be connected to the active layer 121 through a contact hole penetrating (e.g., extending through) the gate insulating film 130 and the interlayer insulating film 140. The source electrode 123 and the drain electrode 124 may be formed as a single-layer film or a multi-layer film including Mo, Al, Cr, Au, Ti, Ni, Nd, Cu, and / or alloys thereof.

[0224] A passivation film 150 may be formed on the source electrode 123 and the drain electrode 124 to insulate the TFT 120. The passivation film 150 may be formed as an inorganic film such as, for example, a silicon nitride layer, a silicon nitride oxide layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.

[0225] The planarization film 160 may be formed on the passivation film 150 to planarize a height difference generated by the TFT 120. The planarization film 160 may be formed as an organic film including, for example, acrylic resin, epoxy resin, phenol resin, polyamide resin, or polyimide resin.

[0226] The light emitting element layer EML is formed on the TFT layer TFTL. The light emitting element layer EML includes a light emitting element 170 and a pixel defining film 180.

[0227] The light emitting element 170 and the pixel defining film 180 are formed on the planarization film 160. The light emitting element 170 may include a first electrode 171, an organic light emitting layer 172, and a second electrode 173.

[0228] The first electrode 171 may be formed on the planarization film 160 . Fig.12 The first electrode 171 is shown to be connected to the drain electrode 124 of the TFT 120 via a contact hole penetrating (e.g., extending through) the passivation film 150 and the planarization film 160, but the present disclosure is not limited thereto. For example, the first electrode 171 may be connected to the source electrode 123 of the TFT 120 via a contact hole penetrating (e.g., extending through) the passivation film 150 and the planarization film 160.

[0229] In a top emission structure in which light is emitted from the organic light-emitting layer 172 toward the second electrode 173, the first electrode 171 may be formed of a metal material having high reflectivity (e.g., such as a stack of Al and Ti (e.g., Ti / Al / Ti), a stack of Al and indium tin oxide (ITO) (e.g., ITO / Al / ITO), a silver-palladium-copper (APC) alloy, or a stack of an APC alloy and ITO (e.g., ITO / APC / ITO). In another embodiment, the first electrode 171 may be formed as a single layer including Mo, Ti, Cu, or Al.

[0230] In a bottom emission structure in which light is emitted from the organic light emitting layer 172 toward the first electrode 171, the first electrode 171 may be formed of a transparent conductive oxide (TCO) material (e.g., such as ITO or indium zinc oxide (IZO)) or a semi-transparent metal material (e.g., such as Mg, Ag, or an alloy thereof) that can transmit light therethrough. In the case where the first electrode 171 is formed of a semi-transparent metal material, the emission efficiency of the light emitting element layer EML may be improved due to the microcavity effect.

[0231] The pixel defining film 180 may be formed on the planarization film 160 to define (e.g., to expose) the first electrode 171, thereby defining, for example, the first emission region R. The pixel defining film 180 may be formed to cover the edge of the first electrode 171. The pixel defining film 180 may be formed as an organic film including, for example, acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin.

[0232] The first emission region R refers to a region where the first electrode 171, the organic light emitting layer 172, and the second electrode 173 are sequentially stacked on each other so that holes from the first electrode 171 and electrons from the second electrode 173 can be combined together to emit light. The second emission region G and the third emission region B can be arranged in the same manner as Fig.12 The first emission region R shown in FIG. 1 is formed in the same or substantially the same manner.

[0233] The organic light emitting layer 172 is formed on the first electrode 171 and the pixel defining film 180. The organic light emitting layer 172 may include an organic material and may emit light having a suitable or desired color (e.g., having a predetermined color). For example, the organic light emitting layer 172 may include a hole transport layer, an organic material layer, and an electron transport layer. In this example, the organic light emitting layer 172 of the first emission region R may emit red light, the organic light emitting layer 172 of the second emission region G may emit green light, and the organic light emitting layer 172 of the third emission region B may emit blue light.

[0234] In another example, the organic light-emitting layer 172 of the first emission region R, the second emission region G, and the third emission region B can be formed as a single-layer film and can emit white light, ultraviolet (UV) light, or blue light. In this example, the first emission region R, the second emission region G, and the third emission region B can be stacked with a red color filter layer, a green color filter layer, and a blue color filter layer, respectively. The red color filter layer, the green color filter layer, and the blue color filter layer can transmit red light, green light, and blue light through them, respectively. The red color filter layer, the green color filter layer, and the blue color filter layer can be arranged on the thin film encapsulation layer TFEL. The first emission region R, the second emission region G, and the third emission region B can also be stacked with a red wavelength conversion layer, a green wavelength conversion layer, and a blue wavelength conversion layer, respectively. The red wavelength conversion layer, the green wavelength conversion layer, and the blue wavelength conversion layer can convert UV light or blue light into red light, green light, and blue light, respectively. The red wavelength conversion layer, the green wavelength conversion layer, and the blue wavelength conversion layer can be arranged on the thin film encapsulation layer TFEL. For example, the red wavelength conversion layer can be arranged between the thin film encapsulation layer TFEL and the red color filter layer, the green wavelength conversion layer can be arranged between the thin film encapsulation layer TFEL and the green color filter layer, and the blue wavelength conversion layer can be arranged between the thin film encapsulation layer TFEL and the blue color filter layer.

[0235] The second electrode 173 is formed on the organic light emitting layer 172. The second electrode 173 may be formed to cover the organic light emitting layer 172. The second electrode 173 may be a common layer (eg, a common electrode) formed in common for all pixels PXG. A capping layer may be formed on the second electrode 173.

[0236] In the top emission structure, the second electrode 173 may be formed of a TCO material (e.g., such as ITO or IZO) or a semi-transparent metal material (e.g., such as Mg, Ag, or an alloy thereof) that can transmit light therethrough. In the case where the second electrode 173 is formed of a semi-transparent metal material, the emission efficiency of the light emitting element layer EML may be improved due to the microcavity effect.

[0237] In the bottom emission structure, the second electrode 173 may be formed of a metal material having high reflectivity, such as, for example, a stack of Al and Ti (e.g., Ti / Al / Ti), a stack of Al and ITO (e.g., ITO / Al / ITO), an APC alloy, or a stack of an APC alloy and ITO (e.g., ITO / APC / ITO). In another example, the second electrode 173 may be formed as a single layer including Mo, Ti, Cu, Al, or ITO.

[0238] The thin film encapsulation layer TFEL is formed on the light emitting element layer EML. The thin film encapsulation layer TFEL is disposed on the second electrode 173. The thin film encapsulation layer TFEL may include at least one inorganic film for preventing or substantially preventing oxygen, moisture, etc. from penetrating into the organic light emitting layer 172 and the second electrode 173. The thin film encapsulation layer TFEL may also include at least one organic film for protecting the light emitting element layer EML from foreign materials (e.g., such as dust). For example, the thin film encapsulation layer TFEL may include a first inorganic film disposed on the second electrode 173, an organic film disposed on the first inorganic film, and a second inorganic film disposed on the organic film. The first inorganic film and the second inorganic film may be formed as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer, but the present disclosure is not limited thereto. The organic film may be formed of an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin, but the present disclosure is not limited thereto.

[0239] The sensing unit (e.g., sensing circuit or sensing layer) SENL is formed on the thin film encapsulation layer TFEL. The sensing unit SENL may include a driving electrode TE, a sensing electrode RE, a proximity sensing electrode PE, a dummy pattern DE, a bridge (e.g., BE1, BE2, and BE3), a first driving line TL1, a second driving line TL2, an input sensing line RL, a proximity sensing line PL, first to fifth guard lines GL1 to GL5, and first to third ground lines GRL1 to GRL3. For convenience, Fig.12 The connection structure between the driving electrode TE of the sensing unit SENL and the first bridge BE1 is shown.

[0240] The second buffer film BF2 may be formed on the thin film encapsulation layer TFEL. The second buffer film BF2 may be formed as a multilayer film in which one or more inorganic films selected from silicon nitride layers, silicon oxynitride layers, silicon oxide layers, titanium oxide layers, and aluminum oxide layers are alternately stacked.

[0241] The first bridge BE1 may be formed on the second buffer film BF2. The first bridge BE1 may be formed of, for example, a stack of Al and Ti (e.g., Ti / Al / Ti), a stack of Al and ITO (e.g., ITO / Al / ITO), an APC alloy, or a stack of an APC alloy and ITO (e.g., ITO / APC / ITO), but the present disclosure is not limited thereto. For example, in another embodiment, the first bridge BE1 may be formed as a single layer of Mo, Ti, Cu, Al, or ITO.

[0242] The first sensor insulating film TINS1 is formed on the first bridge BE1. The first sensor insulating film TINS1 may be formed as an inorganic film, such as, for example, a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. In another embodiment, the first sensor insulating film TINS1 may be formed as an organic film including, for example, acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin.

[0243] The driving electrode TE and the sensing electrode RE may be formed on the first sensor insulating film TINS1 and may be spaced apart from each other on the first sensor insulating film TINS1. The driving electrode TE and the sensing electrode RE may be formed of, for example, a stack of Al and Ti (e.g., Ti / Al / Ti), a stack of Al and ITO (e.g., ITO / Al / ITO), an APC alloy or a stack of APC alloy and ITO (e.g., ITO / APC / ITO), but the present disclosure is not limited thereto. In another example embodiment, the driving electrode TE and the sensing electrode RE may be formed as a single layer of Mo, Ti, Cu, Al, or ITO. The driving electrode TE and the sensing electrode RE may be formed at the same layer (e.g., in the same layer or on the same layer), and may include the same or substantially the same material as the dummy pattern DE of the sensing unit SENL, the second bridge BE2, the first driving line TL1, the second driving line TL2, the input sensing line RL, the first to fifth guard lines GL1 to GL5, and the first to third ground lines GRL1 to GRL3, but the present disclosure is not limited thereto.

[0244] The first contact hole CNT1 may be formed to penetrate (eg, extend through) the first sensor insulating film TINS1, and thus, the first contact hole CNT1 may expose the first bridge BE1. The driving electrode TE may be connected to the first bridge BE1 through the first contact hole CNT1.

[0245] The second sensor insulating film TINS2 is formed on the driving electrode TE and the sensing electrode RE. The second sensor insulating film TINS2 may planarize a height difference generated by the driving electrode TE, the sensing electrode RE, and the first bridge BE1. The second sensor insulating film TINS2 may be formed as an organic film including, for example, acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin.

[0246] according to Fig.12In an embodiment of the present invention, a first bridge BE1 connecting a pair of adjacent (e.g., adjacent in the second direction or the Y-axis direction) driving electrodes TE to each other may be disposed on the second buffer film BF2, and the sensing electrode RE and the second bridge BE2 may be disposed on the first sensor insulating film TINS1. Therefore, the driving electrode TE and the sensing electrode RE may be electrically isolated from each other at a crossing region between the driving electrode TE and the sensing electrode RE, the sensing electrodes RE may be electrically connected to each other in the first direction (e.g., the X-axis direction), and the driving electrodes TE may be electrically connected to each other in the second direction (e.g., the Y-axis direction).

[0247] Fig.13 It is shown in Figure 7 At the second sensing area (e.g., at Figure 7 in the second sensing region or in Figure 7 1. A plan view of an exemplary driving electrode, an exemplary sensing electrode, an exemplary proximity sensing electrode, and an exemplary dummy pattern on a second sensing region of the device.

[0248] For convenience, Fig.13 A row of three adjacent (e.g., adjacent in the first direction or the X-axis direction) sensing electrodes RE at the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2) and two columns of adjacent (e.g., adjacent in the second direction or the Y-axis direction) driving electrodes TE at the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2) are shown.

[0249] Fig.13 The driving electrode TE, the sensing electrode RE, the first bridge BE1 and the second bridge BE2 shown in FIG. Fig.10 Their respective corresponding parts are described to be the same or substantially the same, and thus, redundant descriptions thereof may not be repeated.

[0250] Reference Fig.13 , the proximity sensing electrode PE may be arranged along a first direction (e.g., an X-axis direction) and may be electrically connected to each other. The driving electrodes TE may be arranged along a second direction (e.g., a Y-axis direction) and may be electrically connected to each other. The proximity sensing electrode PE may be surrounded by the sensing electrode RE and the dummy pattern DE (e.g., surrounding its periphery). The proximity sensing electrode PE may be electrically isolated from the sensing electrode RE. The proximity sensing electrode PE may be arranged to be spaced apart from the sensing electrode RE. The dummy pattern DE may be electrically isolated from the driving electrode TE. The dummy pattern DE may be arranged to be spaced apart from the driving electrode TE.

[0251] In order to electrically isolate the proximity sensing electrode PE and the driving electrode TE from each other at the intersection area between the proximity sensing electrode PE and the driving electrode TE, the driving electrodes TE adjacent to each other in the second direction (e.g., the Y-axis direction) may be connected to each other via the first bridge BE1, and the proximity sensing electrodes PE adjacent to each other in the first direction (e.g., the X-axis direction) may be connected to each other via the third bridge BE3.

[0252] Reference will be described in more detail below Fig.14A , the third bridge BE3 may include a first sub-bridge SBE1 and a second sub-bridge SBE2, the first sub-bridge SBE1 being disposed at the same layer as a layer close to the sensing electrode PE (e.g., in the same layer as a layer close to the sensing electrode PE or on the same layer as a layer close to the sensing electrode PE), and the second sub-bridge SBE2 being connected to the first sub-bridge SBE1 via a second contact hole CNT2. The first sub-bridge SBE1 may be electrically isolated from the sensing electrode RE and may be disposed to be spaced apart from the sensing electrode RE. For example, referring to Fig.14A , Fig.15 and Fig.16 , the second sub-bridge SBE2 may be disposed on the second buffer film BF2 , and the proximity sensing electrode PE and the first sub-bridge SBE1 may be disposed on the first sensor insulating film TINS1 .

[0253] The second sub-bridge SBE2 may include at least one bent portion (eg, may be formed to be bent at least once). Fig.13 It is illustrated that the second sub-bridge SBE2 is bent in the shape of an angle bracket (eg, “<” and ">”), but the shape of the second sub-bridge SBE2 is not limited thereto. Fig.13 It is shown that two of the first sub-bridges SBE1 are connected to each other through a single second sub-bridge SBE2, but the present disclosure is not limited thereto, and two of the first sub-bridges SBE1 may be connected to each other through any suitable number of second sub-bridges SBE2.

[0254] Reference will be described in more detail below Fig. 14BIn another example embodiment, the third bridge BE3 may be formed at the same layer as the layer close to the sensing electrode PE (e.g., formed in the same layer as the layer close to the sensing electrode PE or formed on the same layer as the layer close to the sensing electrode PE), may include the same or substantially the same material as the material close to the sensing electrode PE, and may extend from the close to the sensing electrode PE. In this case, the third bridge BE3 may be electrically isolated from the sensing electrode RE and the second bridge BE2, and may be disposed to be spaced apart from the sensing electrode RE and the second bridge BE2. The third bridge BE3 may be disposed on the first sensor insulating film TINS1.

[0255] The proximity sensing electrode PE and the dummy pattern DE may have a quadrangular shape in a plan view, but the present disclosure is not limited thereto. The proximity sensing electrode PE may have a mesh structure or a fishnet structure in a plan view.

[0256] At the second sensing area TSA2 (e.g., in or on the second sensing area TSA2), the density of the proximity sensing electrodes PE that do not overlap with the sensor SENS may be greater than the density of the proximity sensing electrodes PE that overlap with the sensor SENS. In other words, the density of the proximity sensing electrodes PE that overlap with the sensor SENS may be less than the density of the proximity sensing electrodes PE that do not overlap with the sensor SENS. The density of the proximity sensing electrodes PE refers to the area of ​​the proximity sensing electrodes PE of a predetermined area.

[0257] For example, at the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2), the mesh hole size of the proximity sensing electrode PE overlapping the sensor SENS may be larger than the mesh hole size of the proximity sensing electrode PE not overlapping the sensor SENS. Alternatively, at the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2), the line width of the proximity sensing electrode PE overlapping the sensor SENS may be smaller than the line width of the proximity sensing electrode PE not overlapping the sensor SENS.

[0258] In this case, at the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2), the density of the proximity sensing electrodes PE overlapping the sensor SENS may be less than the density of the dummy pattern DE. For example, at the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2), the mesh hole size of the proximity sensing electrodes PE overlapping the sensor SENS may be greater than the mesh hole size of the dummy pattern DE. Alternatively, at the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2), the line width of the proximity sensing electrodes PE overlapping the sensor SENS may be less than the line width of the dummy pattern DE.

[0259] In addition, at the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2), the density of the proximity sensing electrodes PE overlapping the sensor SENS may be less than the density of the drive electrodes TE and the density of the sensing electrodes RE. For example, at the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2), the mesh hole size of the proximity sensing electrodes PE overlapping the sensor SENS may be greater than the mesh hole size of the drive electrodes TE and the sensing electrodes RE. Optionally, at the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2), the line width of the proximity sensing electrodes PE overlapping the sensor SENS may be less than the line width of the drive electrodes TE and the sensing electrodes RE.

[0260] Therefore, since the transmittance of the sensing unit SENL of the display panel 300 overlapped with the sensor SENS can be enhanced, even when the sensor SENS is disposed at the bottom of the display panel 300, degradation of the sensing capability of the sensing unit SENL can be prevented or reduced. Figure 2 The sensor SENS may be one of the sensors 740 , 750 , 760 , and 770 on the main circuit board 700 , but the present disclosure is not limited thereto. For example, in an embodiment, the sensor SENS may be a sensor that senses light at the top surface of the display panel 300 .

[0261] As mentioned above Fig. 9 As described, in order to detect the proximity input from the user, the sensing drive signal TD is concurrently (e.g., simultaneously or at the same time) applied to the plurality of column drive electrodes TE, and the voltage charged in the second mutual capacitance Cm2 can be detected via the plurality of rows of proximity sensing electrodes PE. Therefore, the second mutual capacitance Cm2 can be greater than the first mutual capacitance Cm1. Therefore, even when the density of one proximity sensing electrode PE in the proximity sensing electrodes PE is reduced, the degradation of the performance of proximity sensing can be prevented or reduced.

[0262] According to another embodiment of the present disclosure, at the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2), the proximity sensing electrodes PE may have the same or substantially the same density as each other. For example, at the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2), the proximity sensing electrodes PE may have the same or substantially the same mesh hole size as each other (e.g., regardless of whether the proximity sensing electrode PE is overlapped with the sensor SENS). Optionally, at the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2), the proximity sensing electrodes PE may have the same or substantially the same line width as each other (e.g., regardless of whether the proximity sensing electrode PE is overlapped with the sensor SENS).

[0263] In this example, at the second sensing area TSA2 (e.g., in or on the second sensing area TSA2), the density of the proximity sensing electrode PE may be smaller than the density of the dummy pattern DE. For example, at the second sensing area TSA2 (e.g., in or on the second sensing area TSA2), the mesh hole size of the proximity sensing electrode PE may be larger than the mesh hole size of the dummy pattern DE. Alternatively, at the second sensing area TSA2 (e.g., in or on the second sensing area TSA2), the line width of the proximity sensing electrode PE may be smaller than the line width of the dummy pattern DE.

[0264] In addition, at the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2), the density of the proximity sensing electrode PE may be less than the density of the drive electrode TE and the density of the sensing electrode RE. For example, at the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2), the mesh hole size of the proximity sensing electrode PE may be greater than the mesh hole size of the drive electrode TE and the sensing electrode RE. Optionally, at the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2), the line width of the proximity sensing electrode PE may be less than the line width of the drive electrode TE and the sensing electrode RE.

[0265] According to another example embodiment of the present disclosure, at the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2), the density of the proximity sensing electrode PE may be the same as or substantially the same as the density of the dummy pattern DE. For example, at the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2), the mesh hole size of the proximity sensing electrode PE may be the same as or substantially the same as the mesh hole size of the dummy pattern DE. Alternatively, at the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2), the line width of the proximity sensing electrode PE may be the same as or substantially the same as the line width of the dummy pattern DE.

[0266] In this example, at the second sensing area TSA2 (e.g., in or on the second sensing area TSA2), each of the density of the proximity sensing electrode PE and the density of the dummy pattern DE may be smaller than the density of the drive electrode TE and the density of the sensing electrode RE. For example, at the second sensing area TSA2 (e.g., in or on the second sensing area TSA2), the mesh hole size of the proximity sensing electrode PE and the dummy pattern DE may be larger than the mesh hole size of the drive electrode TE and the sensing electrode RE. Alternatively, at the second sensing area TSA2 (e.g., in or on the second sensing area TSA2), the line width of the proximity sensing electrode PE and the dummy pattern DE may be smaller than the line width of the drive electrode TE and the sensing electrode RE.

[0267] like Fig.13 As shown in , because the density of the proximity sensing electrode PE overlapped with the sensor SENS is less than the density of the driving electrode TE and / or the density of the sensing electrode RE, the transmittance of the sensing unit SENL overlapped with the sensor SENS of the display panel 300 can be enhanced, and as a result, even when the sensor SENS is set at the bottom of the display panel 300, the degradation of the sensing capability of the sensing unit SENL can be prevented or reduced.

[0268] Fig.14A yes Fig.13 An enlarged plan view of area B.

[0269] Fig.14A The driving electrode TE, the sensing electrode RE, the first bridge BE1 and the second bridge BE2 can be the same as those mentioned above. Fig.11A Their respective corresponding parts are described to be the same or substantially the same, and thus, redundant descriptions thereof may not be repeated.

[0270] Reference Fig.14A, the proximity sensing electrode PE and the first and second sub-bridges SBE1 and SBE2 of the third bridge BE3 may be formed to have a mesh structure or a fishnet structure in a plan view. In the case where the sensing unit SENL including the proximity sensing electrode PE is directly formed on the thin film encapsulation layer TFEL (for example, Fig.12 As shown in FIG. 1 , since the second electrode 173 of the light emitting element layer EML is too close to the proximity sensing electrode PE of the sensing unit SENL, a large parasitic capacitance is formed between the second electrode 173 of the light emitting element layer EML and the proximity sensing electrode PE of the sensing unit SENL. Since the parasitic capacitance may be proportional to the overlapping area of ​​the second electrode 173 of the light emitting element layer EML and the proximity sensing electrode PE of the sensing unit SENL, the proximity sensing electrode PE of the sensing unit SENL may be formed to have a mesh structure or a fishnet structure in a plan view.

[0271] Since the proximity sensing electrode PE, the first sub-bridge SBE1, and the second sub-bridge SBE2 may be formed to have a mesh structure or a fishnet structure in a plan view, the emission regions R, G, and B may not overlap with the proximity sensing electrode PE, the first sub-bridge SBE1, and the second sub-bridge SBE2. Therefore, light emitted from the emission regions R, G, and B may be prevented or substantially prevented from being blocked by the proximity sensing electrode PE, the first sub-bridge SBE1, and the second sub-bridge SBE2, and as a result, a reduction in brightness of light may be prevented or reduced.

[0272] Because the proximity sensing electrode PE and the first sub-bridge SBE1 may be formed at the same layer as the layer of the driving electrode TE, the sensing electrode RE, and the second bridge BE2 (for example, in the same layer as the layer of the driving electrode TE, the sensing electrode RE, and the second bridge BE2 or on the same layer as the layer of the driving electrode TE, the sensing electrode RE, and the second bridge BE2), the proximity sensing electrode PE and the first sub-bridge SBE1 may be disposed to be spaced apart from the driving electrode TE, the sensing electrode RE, and the second bridge BE2. In this case, a gap or opening may be formed between the proximity sensing electrode PE and the sensing electrode RE and between the first sub-bridge SBE1 and the sensing electrode RE. For convenience, Fig.14A The dashed lines indicate boundaries between the driving electrode TE and the sensing electrode RE, between the driving electrode TE and the second bridge BE2, between the sensing electrode RE and the second bridge BE2, between the proximity sensing electrode PE and the sensing electrode RE, between the first sub-bridge SBE1 and the sensing electrode RE, and between the proximity sensing electrode PE and the first sub-bridge SBE1.

[0273] The first sub-bridge SBE1 may be formed at the same layer as the layer of the proximity sensing electrode PE (e.g., in the same layer as the layer of the proximity sensing electrode PE or on the same layer as the layer of the proximity sensing electrode PE), and may extend from the proximity sensing electrode PE. Therefore, the first sub-bridge SBE1 may be connected to the proximity sensing electrode PE without using a contact hole.

[0274] The second sub-bridge SBE2 may be connected to the first sub-bridge SBE1 via the second contact hole CNT2. The first end of the corresponding second sub-bridge SBE2 may be connected to one first sub-bridge SBE1 of a pair of adjacent (e.g., adjacent in the first direction or the X-axis direction) first sub-bridges SBE1 via the second contact hole CNT2, and the second end of the corresponding second sub-bridge SBE2 may be connected to the other first sub-bridge SBE1 of the pair of adjacent first sub-bridges SBE1 via the other second contact hole CNT2. The second sub-bridge SBE2 may overlap with the driving electrode TE and the sensing electrode RE. Because the second sub-bridge SBE2 may be formed at a layer different from that of the driving electrode TE and the sensing electrode RE (e.g., in a layer different from that of the driving electrode TE and the sensing electrode RE or on a layer different from that of the driving electrode TE and the sensing electrode RE), the second sub-bridge SBE2 may not be short-circuited with the driving electrode TE and the sensing electrode RE even when the second sub-bridge SBE2 overlaps with the driving electrode TE and the sensing electrode RE.

[0275] Fig. 14B yes Fig.13 An enlarged plan view of area B.

[0276] Fig. 14B Examples and Fig.14A The embodiment of may differ in that, Fig. 14B The third bridge BE3 in the embodiment can be formed at the same layer as the layer close to the sensing electrode PE (for example, in the same layer as the layer close to the sensing electrode PE or on the same layer as the layer close to the sensing electrode PE), and can include the same or substantially the same material as the material close to the sensing electrode PE.

[0277] Reference Fig. 14B , the third bridge BE3 may extend from the proximity sensing electrode PE. The third bridge BE3 may connect adjacent proximity sensing electrodes PE to each other. A first end of a corresponding third bridge BE3 may be connected to one proximity sensing electrode PE among a pair of adjacent (e.g., adjacent in the first direction or the X-axis direction) proximity sensing electrodes PE, and a second end of a corresponding third bridge BE3 may be connected to the other proximity sensing electrode PE among the pair of adjacent proximity sensing electrodes PE.

[0278] The third bridge BE3 may be electrically isolated from the sensing electrode RE and the second bridge BE2, and may be disposed to be spaced apart from the sensing electrode RE and the second bridge BE2. Because the third bridge BE3 may be formed at the same layer as a layer close to the sensing electrode PE (e.g., in the same layer as a layer close to the sensing electrode PE or on the same layer as a layer close to the sensing electrode PE), and may include a material that is the same as or substantially the same as a material close to the sensing electrode PE, the third bridge BE3 may be disposed on the first sensor insulating film TINS1 (e.g., see Fig.12 ).

[0279] Fig.15 is along Fig.14A A cross-sectional view taken along line II-II'. Fig.16 is along Fig.14A A cross-sectional view taken along line III-III'.

[0280] Fig.15 and Fig.16 The display unit (eg, display circuit or display layer) DISL is connected to the reference Fig.12 Corresponding parts thereof are described to be the same or substantially the same, and thus, redundant descriptions thereof may not be repeated.

[0281] Reference Fig.15 and Fig.16 The second sub-bridge SBE2 of the third bridge BE3 may be formed on the second buffer film BF2. The second sub-bridge SBE2 may be formed at the same level as the reference Fig.12 At the same layer as the first bridge BE1 described above (for example, at the same layer as in reference Fig.12 The first bridge BE1 described is in the same layer as or in the same layer as the reference Fig.12 The first bridge BE1 described above is on the same layer as the first bridge BE1 described above, and may include Fig.12 The second sub-bridge SBE2 may be formed of, for example, a stack of Al and Ti (e.g., Ti / Al / Ti), a stack of Al and ITO (e.g., ITO / Al / ITO), an APC alloy, or a stack of APC alloy and ITO (e.g., ITO / APC / ITO), but the present disclosure is not limited thereto. In another embodiment, the second sub-bridge SBE2 may be formed as a single layer of Mo, Ti, Cu, Al, or ITO.

[0282] The first sensor insulating film TINS1 may be formed on the second sub-bridge SBE2. The first sub-bridge SBE1 of the proximity sensing electrode PE and the third bridge BE3 may be formed on the first sensor insulating film TINS1. The proximity sensing electrode PE and the first sub-bridge SBE1 may be formed at the same layer as that of the driving electrode TE and the sensing electrode RE (e.g., in the same layer as that of the driving electrode TE and the sensing electrode RE or on the same layer as that of the driving electrode TE and the sensing electrode RE), and may include the same material as that of the driving electrode TE and the sensing electrode RE. The proximity sensing electrode PE and the first sub-bridge SBE1 may be formed of, for example, a stack of Al and Ti (e.g., Ti / Al / Ti), a stack of Al and ITO (e.g., ITO / Al / ITO), an APC alloy, or a stack of APC alloy and ITO (e.g., ITO / APC / ITO), but the present disclosure is not limited thereto. In another embodiment, the proximity sensing electrode PE and the first sub-bridge SBE1 may be formed as a single layer of Mo, Ti, Cu, Al, or ITO.

[0283] The second contact hole CNT2 may be formed to penetrate (eg, extend through) the first sensor insulating film TINS1, and thus the second sub-bridge SBE2 may be exposed through the second contact hole CNT2. The first sub-bridge SBE1 may be connected to the second sub-bridge SBE2 through the second contact hole CNT2.

[0284] The second sensor insulating film TINS2 is formed on the proximity sensing electrode PE and the first sub-bridge SBE1. The second sensor insulating film TINS2 may planarize a height difference generated by the proximity sensing electrode PE and the first sub-bridge SBE1.

[0285] according to Fig.15 and Fig.16 In the embodiment of the present invention, the second sub-bridge SBE2 of the third bridge BE3 connecting the proximity sensing electrodes PE adjacent to each other in the first direction (e.g., the X-axis direction) may be disposed on the second buffer film BF2, and the proximity sensing electrode PE and the first sub-bridge SBE1 may be disposed on the first sensor insulating film TINS1. Therefore, the third bridge BE3 and the driving electrode TE may be electrically isolated from each other at the crossing region between the third bridge BE3 and the driving electrode TE.

[0286] Fig.17 It is shown in Figure 7 At the second sensing area (e.g., at Figure 7 in the second sensing region or in Figure 7 1. A plan view of an exemplary driving electrode, an exemplary sensing electrode, an exemplary proximity sensing electrode, and an exemplary dummy pattern on a second sensing region of the device.

[0287] Fig.17 Examples and Fig.13 The embodiment of EMBODIMENT 2 is different in that, at (eg, in or on) the second sensing area TSA2, a dummy pattern DE may overlap the sensor SENS instead of the proximity sensing electrode PE.

[0288] Reference Fig.17 , at the second sensing area TSA2 (e.g., in or on the second sensing area TSA2), the proximity sensing electrode PE does not overlap with the sensor SENS in the third direction (e.g., the Z-axis direction). At the second sensing area TSA2 (e.g., in or on the second sensing area TSA2), the dummy pattern DE may overlap with the sensor SENS in the third direction (e.g., the Z-axis direction).

[0289] The dummy pattern DE may be surrounded by the sensing electrode RE (eg, around the periphery thereof). The dummy pattern DE may be electrically floating. For example, no voltage may be applied to the dummy pattern DE.

[0290] The dummy pattern DE overlapped with the sensor SENS may be disposed between a pair of adjacent (e.g., adjacent in the first direction or the X-axis direction) proximity sensing electrodes PE. Therefore, the third bridge BE3 may further include a third sub-bridge SBE3. In the case where the dummy pattern DE is between a pair of adjacent (e.g., adjacent in the first direction or the X-axis direction) proximity sensing electrodes PE, the third sub-bridge SBE3 may be disposed to bypass the dummy pattern DE, and therefore, may not be connected to the dummy pattern DE. Fig.17 It is shown that the third sub-bridge SBE3 bypasses the dummy pattern DE at the upper side of the dummy pattern DE (e.g., on the upper side of the dummy pattern DE), but the present disclosure is not limited thereto. For example, in another embodiment, the third sub-bridge SBE3 may bypass the dummy pattern DE at the lower side of the dummy pattern DE (e.g., on the lower side of the dummy pattern DE). The third sub-bridge SBE3 may overlap the sensor SENS.

[0291] For example, the third sub-bridge SBE3 may include at least one bent portion (eg, may be bent at least once) to bypass the dummy pattern DE. Fig.17 It is illustrated that the third sub-bridge SBE3 is bent in the shape of an angle bracket (eg, “<” or ">”), but the shape of the third sub-bridge SBE3 is not limited thereto.

[0292] like Fig.17As shown in , the third sub-bridge SBE3 can be formed at the same layer as the layer close to the sensing electrode PE (for example, in the same layer as the layer close to the sensing electrode PE or on the same layer as the layer close to the sensing electrode PE), and can include the same material as the material of the close to the sensing electrode PE, and can be connected to (for example, connected to via the first sub-bridge SBE1 and the second sub-bridge SBE2) the close to the sensing electrode PE.

[0293] At the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2), the density of the dummy pattern DE overlapping the sensor SENS may be smaller than the density of the dummy pattern DE not overlapping the sensor SENS. For example, at the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2), the mesh hole size of the dummy pattern DE overlapping the sensor SENS may be larger than the mesh hole size of the dummy pattern DE not overlapping the sensor SENS. Alternatively, at the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2), the line width of the dummy pattern DE overlapping the sensor SENS may be smaller than the line width of the dummy pattern DE not overlapping the sensor SENS.

[0294] In this case, at the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2), the density of the dummy pattern DE overlapping the sensor SENS may be smaller than the density close to the sensing electrode PE. For example, at the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2), the mesh hole size of the dummy pattern DE overlapping the sensor SENS may be larger than the mesh hole size close to the sensing electrode PE. Alternatively, at the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2), the line width of the dummy pattern DE overlapping the sensor SENS may be smaller than the line width close to the sensing electrode PE.

[0295] In addition, at the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2), the density of the dummy pattern DE overlapping the sensor SENS may be smaller than the density of the driving electrode TE and the density of the sensing electrode RE. For example, at the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2), the mesh hole size of the dummy pattern DE overlapping the sensor SENS may be larger than the mesh hole size of the driving electrode TE and the sensing electrode RE. Alternatively, at the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2), the line width of the dummy pattern DE overlapping the sensor SENS may be smaller than the line width of the driving electrode TE and the sensing electrode RE.

[0296] Therefore, since the transmittance of the sensing unit SENL of the display panel 300 overlapping the sensor SENS may be enhanced, even when the sensor SENS is disposed at the bottom of the display panel 300 , degradation of the sensing capability of the sensing unit SENL may be prevented or reduced.

[0297] As mentioned above Fig. 9 As described, since the presence of the proximity input from the user can be detected by concurrently (e.g., simultaneously or at the same time) applying the sensing driving signal TD to the plurality of column driving electrodes TE and sensing the voltage charged in the second mutual capacitance Cm2 via the plurality of row proximity sensing electrodes PE, the second mutual capacitance Cm2 can be greater than the first mutual capacitance Cm1. Therefore, even when one of the proximity sensing electrodes PE is replaced with the dummy pattern DE, the degradation of the performance of the proximity sensing can be prevented or reduced.

[0298] In another embodiment, at the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2), the dummy patterns DE may have the same or substantially the same density as each other. For example, at the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2), the dummy patterns DE may have the same or substantially the same mesh hole size as each other (e.g., regardless of whether the dummy patterns DE are overlapped with the sensor SENS). Alternatively, at the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2), the dummy patterns DE may have the same or substantially the same line width as each other (e.g., regardless of whether the dummy patterns DE are overlapped with the sensor SENS).

[0299] In this example, at the second sensing area TSA2 (e.g., in or on the second sensing area TSA2), the density of the proximity sensing electrode PE may be smaller than the density of the dummy pattern DE. For example, at the second sensing area TSA2 (e.g., in or on the second sensing area TSA2), the mesh hole size of the proximity sensing electrode PE may be larger than the mesh hole size of the dummy pattern DE. Alternatively, at the second sensing area TSA2 (e.g., in or on the second sensing area TSA2), the line width of the proximity sensing electrode PE may be smaller than the line width of the dummy pattern DE.

[0300] In addition, at the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2), the density of the proximity sensing electrode PE may be less than the density of the drive electrode TE and the density of the sensing electrode RE. For example, at the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2), the mesh hole size of the proximity sensing electrode PE may be greater than the mesh hole size of the drive electrode TE and the sensing electrode RE. Optionally, at the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2), the line width of the proximity sensing electrode PE may be less than the line width of the drive electrode TE and the sensing electrode RE.

[0301] In another embodiment, at the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2), the density of the dummy pattern DE may be the same as or substantially the same as the density near the sensing electrode PE. For example, at the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2), the mesh hole size of the dummy pattern DE may be the same as or substantially the same as the mesh hole size near the sensing electrode PE. Alternatively, at the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2), the line width of the dummy pattern DE may be the same as or substantially the same as the line width near the sensing electrode PE.

[0302] In this example, at the second sensing area TSA2 (e.g., in or on the second sensing area TSA2), each of the density of the dummy pattern DE and the density of the proximity sensing electrode PE may be smaller than the density of the drive electrode TE and the density of the sensing electrode RE. For example, at the second sensing area TSA2 (e.g., in or on the second sensing area TSA2), the mesh hole size of the dummy pattern DE and the proximity sensing electrode PE may be larger than the mesh hole size of the drive electrode TE and the sensing electrode RE. Alternatively, at the second sensing area TSA2 (e.g., in or on the second sensing area TSA2), the line width of the dummy pattern DE and the proximity sensing electrode PE may be smaller than the line width of the drive electrode TE and the sensing electrode RE.

[0303] like Fig.17 As shown in, because the density of the dummy electrode DE overlapping with the sensor SENS at the second sensing area TSA2 (for example, in the second sensing area TSA2 or on the second sensing area TSA2) is less than the density of the driving electrode TE and / or the sensing electrode RE, the transmittance of the sensing unit SENL of the display panel 300 overlapping with the sensor SENS can be enhanced, and as a result, even when the sensor SENS is set at the bottom of the display panel 300, the degradation of the sensing capability of the sensing unit SENL can be prevented or reduced.

[0304] Fig.18 It is shown in Figure 7 At the second sensing area (e.g., at Figure 7 in the second sensing region or in Figure 7 1. A plan view of an exemplary driving electrode, an exemplary sensing electrode, an exemplary proximity sensing electrode, and an exemplary dummy pattern on a second sensing region of the device.

[0305] Fig.18 Examples and Fig.17 The embodiment of may differ in that, Fig.18 The distance between the third sub-bridge SBE3 and the sensing electrode RE may be greater than the maximum length of the mesh holes of each of the sensing electrodes RE.

[0306] Reference Fig.18, the distance between the third sub-bridge SBE3 and the sensing electrode RE may be greater than the maximum length of the mesh hole of each of the sensing electrodes RE. In addition, the distance between the third sub-bridge SBE3 and the sensing electrode RE may be greater than the maximum length of the mesh hole of each of the driving electrodes TE, the maximum length of the mesh hole of the third sub-bridge SBE3, and the maximum length of the mesh hole close to each of the sensing electrodes PE. Therefore, the transmittance of the sensing unit SENL of the display panel 300 overlapped with the sensor SENS may be enhanced, and as a result, even when the sensor SENS is disposed at the bottom of the display panel 300, the degradation of the sensing capability of the sensing unit SENL may be prevented or reduced.

[0307] Fig.19 It is shown in Figure 7 At the second sensing area (e.g., at Figure 7 in the second sensing region or in Figure 7 1. A plan view of an exemplary driving electrode, an exemplary sensing electrode, an exemplary proximity sensing electrode, and an exemplary dummy pattern on a second sensing region of the device.

[0308] Fig.19 Examples and Fig.17 The embodiment of FIG. 4 is different in that the third sub-bridge SBE3 does not overlap the sensor SENS.

[0309] Reference Fig.19 , the third sub-bridge SBE3 may not overlap the sensor SENS and may bypass the dummy pattern DE.

[0310] Fig. 20 It is shown in Figure 7 At the second sensing area (e.g., at Figure 7 in the second sensing region or in Figure 7 1. A plan view of an exemplary driving electrode, an exemplary sensing electrode, an exemplary proximity sensing electrode, and an exemplary dummy pattern on a second sensing region of the device.

[0311] Fig. 20 Examples and Fig.13 The difference of the embodiments may be that at the second sensing area TSA2 (e.g., in or on the second sensing area TSA2), instead of being close to the sensing electrode PE, the empty space ES surrounded by the sensing electrode RE (e.g., around its periphery) may overlap with the sensor SENS.

[0312] Reference Fig. 20, at the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2), the proximity sensing electrode PE and the dummy pattern DE may not overlap with the sensor SENS in the third direction (e.g., the Z-axis direction). At the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2), the empty space ES may overlap with the sensor SENS in the third direction (e.g., the Z-axis direction). Therefore, the transmittance of the sensing unit SENL of the display panel 300 overlapping with the sensor SENS may be enhanced, and as a result, even when the sensor SENS is disposed at the bottom of the display panel 300, degradation of the sensing capability of the sensing unit SENL may be prevented or reduced.

[0313] An empty space ES overlapping the sensor SENS may be provided between a pair of adjacent (eg, adjacent in the first direction or the X-axis direction) proximity sensing electrodes PE In this case, the third bridge BE3 may further include a third sub-bridge SBE3.

[0314] In the case where the empty space ES is between a pair of adjacent (eg, adjacent in the first direction or the X-axis direction) proximity sensing electrodes PE, the third sub-bridge SBE3 may be disposed to extend across the empty space ES.

[0315] like Fig. 20 As shown in , the third sub-bridge SBE3 can be formed at the same layer as the layer of the proximity sensing electrode PE (for example, in the same layer as the layer of the proximity sensing electrode PE or on the same layer as the layer of the proximity sensing electrode PE), and can include the same material as the material of the proximity sensing electrode PE, and can be connected to the proximity sensing electrode PE (for example, via the first sub-bridge SBE1 and the second sub-bridge SBE2).

[0316] Fig.21 It is shown in Figure 7 At the second sensing area (e.g., at Figure 7 in the second sensing region or in Figure 7 A plan view of an exemplary driving electrode, an exemplary sensing electrode, an exemplary proximity sensing electrode, and an exemplary dummy pattern on a second sensing region of the device.

[0317] Fig.21 Examples and Fig.17 The difference of the embodiments may be that at the second sensing area TSA2 (e.g., in or on the second sensing area TSA2), instead of being close to the sensing electrode PE, the empty space ES surrounded by the sensing electrode RE (e.g., around its periphery) may overlap with the sensor SENS.

[0318] Reference Fig.21 , at the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2), the proximity sensing electrode PE and the dummy pattern DE may not overlap with the sensor SENS in the third direction (e.g., the Z-axis direction). At the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2), the empty space ES may overlap with the sensor SENS in the third direction (e.g., the Z-axis direction). Therefore, the transmittance of the sensing unit SENL of the display panel 300 overlapping with the sensor SENS may be enhanced, and as a result, even when the sensor SENS is disposed at the bottom of the display panel 300, degradation of the sensing capability of the sensing unit SENL may be prevented or reduced.

[0319] Fig. 22 It is shown in Figure 7 At the second sensing area (e.g., at Figure 7 in the second sensing region or in Figure 7 1. A plan view of an exemplary driving electrode, an exemplary sensing electrode, an exemplary proximity sensing electrode, and an exemplary dummy pattern on a second sensing region of the device.

[0320] Fig. 22 Examples and Fig.18 The difference of the embodiments may be that at the second sensing area TSA2 (e.g., in or on the second sensing area TSA2), instead of being close to the sensing electrode PE, an empty space ES surrounded by the sensing electrode RE (e.g., around its periphery) is overlapped with the sensor SENS.

[0321] Reference Fig. 22 , at the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2), the proximity sensing electrode PE and the dummy pattern DE may not overlap with the sensor SENS in the third direction (e.g., the Z-axis direction). At the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2), the empty space ES may overlap with the sensor SENS in the third direction (e.g., the Z-axis direction). Therefore, the transmittance of the sensing unit SENL of the display panel 300 overlapping with the sensor SENS may be enhanced, and as a result, even when the sensor SENS is disposed at the bottom of the display panel 300, degradation of the sensing capability of the sensing unit SENL may be prevented or reduced.

[0322] Fig.23 It is shown in Figure 7 At the second sensing area (e.g., at Figure 7 in the second sensing region or in Figure 71. A plan view of an exemplary driving electrode, an exemplary sensing electrode, an exemplary proximity sensing electrode, and an exemplary dummy pattern on a second sensing region of the device.

[0323] Fig.23 Examples and Fig.19 The difference of the embodiments may be that at the second sensing area TSA2 (e.g., in or on the second sensing area TSA2), instead of being close to the sensing electrode PE, an empty space ES surrounded by the sensing electrode RE (e.g., around its periphery) is overlapped with the sensor SENS.

[0324] Reference Fig.23 , at the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2), the proximity sensing electrode PE and the dummy pattern DE may not overlap with the sensor SENS in the third direction (e.g., the Z-axis direction). At the second sensing area TSA2 (e.g., in the second sensing area TSA2 or on the second sensing area TSA2), the empty space ES may overlap with the sensor SENS in the third direction (e.g., the Z-axis direction). Therefore, the transmittance of the sensing unit SENL of the display panel 300 overlapping with the sensor SENS may be enhanced, and as a result, even when the sensor SENS is disposed at the bottom of the display panel 300, degradation of the sensing capability of the sensing unit SENL may be prevented or reduced.

[0325] Fig.24 is a perspective view illustrating a display panel and a display driving unit (eg, a display driver) of a display device according to another embodiment of the present disclosure.

[0326] Reference Fig.24 , the main display area MDA may include sub-pixels PX1, PX2, and PX3 and a non-emitting portion NEA (eg, Figure 5 ), the subsidiary display area SDA may include sub-pixels PX1, PX2, and PX3, a non-emitting portion NEA, and a transmitting portion TA (eg, as shown in FIG. 1 ). Figure 6 Because the sub display area SDA includes the transmission portion TA, the sensors 740, 750, 760, and 770 overlapped with the sub display area SDA in the third direction (eg, the Z-axis direction) may receive light from the top surface of the display panel 300 through the transmission portion TA.

[0327] like Figure 7As shown in , the first sensing area TSA1 overlapping the main display area MDA may include sensor electrodes TE and RE and a dummy pattern DE, and the second sensing area TSA2 overlapping the sub-display area SDA may include sensor electrodes TE and RE, a dummy pattern DE, and a proximity sensing electrode PE. At the second sensing area TSA2 (e.g., in or on the second sensing area TSA2), the density of the proximity sensing electrode PE or the dummy pattern DE overlapping the sensor SENS may be reduced or the proximity sensing electrode PE or the dummy pattern DE may be omitted, thereby improving the transmittance of the sensing unit (e.g., sensing circuit or sensing layer) SENL of the display panel 300 overlapping the sensor SENS.

[0328] Because the sub-display area SDA includes the transmissive portion TA, the pixels per inch (PPI) of the sub-display area SDA may be lower than the PPI of the main display area MDA. PPI refers to the number of pixels that fit on a 1-inch area, so that the higher the PPI of a display device, the higher the quality of an image displayed by the display device. In order to reduce the significance (e.g., visibility) of any reduction in image quality, the sub-display area SDA may be disposed at one side of the display area DA (e.g., in or on one side of the display area DA), for example, as Fig.24 As shown in , the display area DA is disposed at the upper side of the display area DA (e.g., disposed in the upper side of the display area DA or disposed on the upper side of the display area DA) because it is more difficult to display a high-quality image at the sub-display area SDA (e.g., in the sub-display area SDA or on the sub-display area SDA) than at the main display area MDA (e.g., in the main display area MDA or on the main display area MDA).

[0329] However, the position of the auxiliary display area SDA is not limited thereto. For example, in various embodiments, the auxiliary display area SDA may be disposed at the lower side, left side, and / or right side of the display area DA (e.g., in or on the lower side, left side, and / or right side of the display area DA).

[0330] In another embodiment, if Fig.25 As shown in , the subsidiary display area SDA may be disposed between a plurality of main display areas MDA.

[0331] In another embodiment, if Fig.26As shown in , the sub-display area SDA may be disposed at one side of the display area DA (e.g., in or on one side of the display area DA), and the sensing area TSA may be divided into two equal sub-sensing areas (e.g., a first sensing area TSA1 and a second sensing area TSA2) along a second direction (e.g., a Y-axis direction). In this case, since the second mutual capacitance Cm2 between the driving electrode TE and the proximity sensing electrode PE may be formed on half of the top surface of the display panel 300, the presence of the proximity input from the user may be detected from half of the top surface of the display panel 300 according to (e.g., based on) the second mutual capacitance Cm2.

[0332] In another embodiment, if Fig. 27 As shown in , the second sensing area TSA2 may be disposed to overlap the main display area MDA and the sub-display area SDA, and the first sensing area TSA1 may be omitted (e.g., may not be disposed). In this case, since the second mutual capacitance Cm2 may be formed on the entire top surface of the display panel 300, the presence of a proximity input from a user may be detected from the entire top surface of the display panel 300 according to (e.g., based on) the second mutual capacitance Cm2.

[0333] Fig.28 is a flowchart illustrating a method of driving a display device according to an embodiment of the present disclosure.

[0334] Reference Fig.28 In the proximity sensing mode, a determination is first made based on a proximity sensor signal from the proximity sensor 740 as to whether an object is within the proximity of the top surface of the display device 10 (eg, whether an object exists within the proximity of the top surface of the display device 10).

[0335] The proximity sensor 740 includes a light source that outputs light and a light receiver that receives light reflected from an object, and the proximity sensor 740 may determine whether the object is within the proximity of the top surface of the display device 10 according to (e.g., based on) the amount of light reflected from the object. For example, if the amount of light received by the light receiver is less than a first threshold, the proximity sensor 740 may determine that the object is within the proximity of the top surface of the display device 10. Therefore, if the amount of light received by the light receiver is less than the first threshold, the proximity sensor 740 may output a proximity sensor signal having a first logic level, and if the amount of light received by the light receiver is greater than the first threshold, the proximity sensor 740 may output a proximity sensor signal having a second logic level.

[0336] The main processor 710 may determine whether an object is within the proximity of the top surface of the display device 10 according to (e.g., based on) a proximity sensor signal from the proximity sensor 740 (S101). In the case where it is determined that the object is within the proximity of the top surface of the display device 10 (e.g., yes at S101), the main processor 710 may prevent digital video data and timing signals from being provided to the display driving unit (e.g., display driver) 320 to drive the display panel 300. As a result, the display panel 300 may be turned off (S103).

[0337] In the proximity sensing mode, if the proximity sensor 740 does not detect an object, a determination is then made as to whether an object is within the proximity of the display device 10 (e.g., whether an object exists within the proximity of the display device 10) by using the sensor electrodes TE and RE of the sensing unit (e.g., sensing circuit or sensing layer) SENL of the display panel 300 and the proximity sensing electrode PE.

[0338] In the case where a determination is made according to (e.g., based on) the proximity sensor signal from the proximity sensor 740 that no object is within the proximity of the top surface of the display device 10 (e.g., No at S101), the main processor 710 may determine whether an object is within the proximity of the top surface of the display device 10 according to (e.g., based on) the second mutual capacitance Cm2 between the driving electrode TE of the sensing unit SENL of the display panel 300 and the proximity sensing electrode PE. The main processor 710 may receive proximity sensing data (e.g., such as the proximity sensing data) from the sensing driving unit 330 by driving the sensing driving unit (e.g., the sensing driver) 330. Fig. 9 ). The main processor 710 may determine whether the object is within the proximity of the top surface of the display device 10 according to (e.g., based on) the proximity sensing data (S102). For example, the main processor 710 may determine whether the object is within the proximity of the top surface of the display device 10 by comparing the proximity sensing data with a second threshold.

[0339] In the case where it is determined that the object is within the proximity of the top surface of the display device 10 (e.g., yes at S102), the main processor 710 may prevent the digital video data and the timing signal from being provided to the display driving unit 320 to drive the display panel 300. As a result, the display panel 300 may be turned off (S103). On the other hand, in the case where no object is detected using the proximity sensing data (e.g., no at S102), the method may end (or may be repeated at S101).

[0340] In the case where the proximity sensor 740 overlaps the display area DA of the display panel 300, the sensing capability of the proximity sensor 740 may be reduced, but the display device 10 may determine whether an object is within the proximity of the top surface of the display device 10 (e.g., as shown in FIG. 1 ) by using not only the proximity sensor 740 but also the sensing unit SENL of the display panel 300. Fig.28 ). Therefore, a reduction (eg, any reduction) in the sensing capability of the proximity sensor 740 may be compensated by the sensing unit SENL of the display panel 300.

[0341] Although some example embodiments have been described, it will be readily appreciated by those skilled in the art that various modifications are possible in the example embodiments without departing from the spirit and scope of the present disclosure. Therefore, it will be understood that the foregoing is an illustration of various example embodiments and is not to be construed as being limited to the specific example embodiments disclosed herein, and that various modifications to the disclosed example embodiments as well as other example embodiments are intended to be included within the spirit and scope of the present disclosure as defined in the appended claims and their equivalents.

Claims

1. A sensing circuit, the sensing circuit comprising: multiple sensor electrodes; a first capacitor disposed between the plurality of sensor electrodes; a plurality of proximity sensing electrodes electrically isolated from the plurality of sensor electrodes; as well as a second capacitor disposed between at least one sensor electrode of the plurality of sensor electrodes and the plurality of proximity sensing electrodes, wherein the plurality of proximity sensing electrodes and the plurality of sensor electrodes have a grid structure in a plan view; and A mesh hole size of at least one proximity sensing electrode overlapped with the sensor among the plurality of proximity sensing electrodes is larger than a mesh hole size of the plurality of sensor electrodes.

2. The sensing circuit according to claim 1, further comprising: a plurality of dummy patterns electrically isolated from the plurality of sensor electrodes and the plurality of proximity sensing electrodes and surrounded by some of the plurality of sensor electrodes, The density of at least one proximity sensing electrode among the plurality of proximity sensing electrodes is smaller than the density of at least one dummy pattern among the plurality of dummy patterns.

3. The sensing circuit according to claim 2, wherein: The plurality of proximity sensing electrodes and the plurality of dummy patterns have a grid structure in a plan view; and A mesh hole size of the at least one proximity sensing electrode among the plurality of proximity sensing electrodes is greater than a mesh hole size of the plurality of dummy patterns.

4. The sensing circuit according to claim 1, further comprising: A bridge is electrically isolated from the plurality of sensor electrodes and connects adjacent proximity sensing electrodes in a first direction among the plurality of proximity sensing electrodes.

5. A sensing circuit, comprising: multiple sensor electrodes; a first capacitor disposed between the plurality of sensor electrodes; as well as a dummy pattern electrically isolated from the plurality of sensor electrodes, the dummy pattern being electrically floating, wherein the dummy pattern and the plurality of sensor electrodes have a grid structure in a plan view; and A mesh hole size of at least one of the dummy patterns overlapping the sensor is larger than a mesh hole size of the plurality of sensor electrodes.

6. The sensing circuit according to claim 5, further comprising: a proximity sensing electrode electrically isolated from the plurality of sensor electrodes; as well as a second capacitor disposed between the at least one sensor electrode of the plurality of sensor electrodes and the proximity sensing electrode, The density of at least one of the dummy patterns is greater than the density of at least one of the proximity sensing electrodes.

7. The sensing circuit according to claim 6, wherein: The dummy pattern and the proximity sensing electrode have a mesh structure in a plan view, and A mesh hole size of the at least one of the dummy patterns is larger than a mesh hole size of the proximity sensing electrode.

8. The sensing circuit according to claim 6, wherein: The at least one dummy pattern among the dummy patterns is located between proximity sensing electrodes adjacent to each other in the first direction.

9. The sensing circuit according to claim 8, further comprising: A bridge is electrically isolated from the plurality of sensor electrodes and connects adjacent proximity sensing electrodes in the first direction among the proximity sensing electrodes.

10. The sensing circuit according to claim 9, wherein: The bridge bypasses the dummy pattern.

11. The sensing circuit according to claim 9, wherein: The sensing circuit has a grid structure in a plan view; and A distance between the bridge and the plurality of sensor electrodes is greater than a maximum length of a mesh hole of each of the plurality of sensor electrodes.

12. A display device, comprising: A display panel, located on the first surface of the substrate, the display panel comprising a main display area and a sub-display area; A sensing circuit is located on the display panel, wherein the sensing circuit includes a first sensing area overlapping the main display area and a second sensing area overlapping the auxiliary display area; as well as a sensor located on a second surface of the substrate opposite to the first surface of the substrate, wherein the second sensing area includes a sensor electrode, a proximity sensing electrode and a dummy pattern, and the proximity sensing electrode and the dummy pattern are surrounded by the sensor electrode, wherein the sensor overlaps at least one of the proximity sensing electrodes and / or at least one of the dummy patterns, The proximity sensing electrodes and the sensor electrodes have a grid structure in a plan view, and A mesh hole size of the at least one of the proximity sensing electrodes is larger than a mesh hole size of the sensor electrode.

13. The display device according to claim 12, wherein: A density of the at least one of the proximity sensing electrodes is smaller than a density of the at least one of the dummy patterns.

14. The display device according to claim 13, wherein: The dummy pattern has a grid structure in a plan view, and A mesh hole size of the at least one of the proximity sensing electrodes is larger than a mesh hole size of the dummy pattern.

15. The display device according to claim 12, wherein: The density of the at least one of the dummy patterns is smaller than the density of at least one of the sensor electrodes.

16. The display device according to claim 15, wherein: The dummy pattern has a grid structure in a plan view, and A mesh hole size of the at least one of the dummy patterns is larger than a mesh hole size of the sensor electrodes.

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