Display device

Abstract

A display device is provided. The display device includes a display area and a sensor area, the display area including main pixels and the sensor area including auxiliary pixels and a transmissive area, wherein the display device includes: a substrate; a plurality of display elements included in each of the main pixels and each of the auxiliary pixels; a first stacked structure stacked with the plurality of display elements; a second stacked structure stacked with the transmissive area; and a thin film encapsulation layer covering the first stacked structure and the second stacked structure, wherein the first stacked structure has a thickness different from that of the second stacked structure.

Description

[0001] This application claims the benefit of Korean Patent Application No. 10-2019-0113523, filed on September 16, 2019, with the Korean Intellectual Property Office, the entire disclosure of which is incorporated herein by reference. Technical Field

[0002] One or more embodiments relate to a display device. Background Technology

[0003] Display devices can display images using pixels. A display device may include an infrared sensor in a bezel (or border) on its front surface (e.g., the surface where the image is displayed), and objects can be identified by using the infrared sensor.

[0004] Furthermore, as the width of the bezels in display devices decreases, the user's eye can be fixed or focused on the image (or the screen of the display device). Recently, research has been conducted on front-view display technologies to remove the bezel from the front surface of the display device, reposition the infrared sensor located on the front surface (or bezel), and display the image on the entire front surface of the display device. Summary of the Invention

[0005] One or more embodiments provide a display device having a light-transmitting portion in a display area.

[0006] Additional aspects will be set forth in part in the description which follows, and will also be apparent in part from the description, or may be learned by practice of the disclosed embodiments.

[0007] According to an embodiment, a display device includes a display area and a sensor area. The display area includes main pixels, and the sensor area includes auxiliary pixels and a transmissive area. The display device includes: a substrate; a plurality of display elements included in each of the main pixels and each of the auxiliary pixels; a first stacked structure stacked with the plurality of display elements; a second stacked structure stacked with the transmissive area; and a thin-film encapsulation layer covering the first stacked structure and the second stacked structure, wherein the first stacked structure has a thickness different from that of the second stacked structure.

[0008] Each of the first stacked structure and the second stacked structure may include a capping layer and a light extraction layer disposed on the capping layer, a thin film encapsulation layer disposed on the light extraction layer and including a first inorganic encapsulation layer, and the refractive index of the light extraction layer is less than the refractive index of the capping layer and the refractive index of the first inorganic encapsulation layer.

[0009] The cover layer may include: a first cover region disposed in the transmissive region; and a second cover region disposed on the plurality of display elements, wherein the first cover region may have a greater thickness than the second cover region.

[0010] The thickness of the first cover region can be greater than or equal to 1.1 times the thickness of the second cover region and less than or equal to 10 times the thickness of the second cover region.

[0011] The light extraction layer may include: a first light extraction region disposed in the transmission region; and a second light extraction region disposed on the plurality of display elements, wherein the first light extraction region may have a greater thickness than the second light extraction region.

[0012] The light extraction layer may include: a first light extraction region disposed in the transmission region; and a second light extraction region disposed on the plurality of display elements, wherein the first light extraction region may have a greater thickness than the second light extraction region.

[0013] The thickness of the first light extraction region can be approximately 2 to approximately 10 times the thickness of the second light extraction region.

[0014] The difference between the refractive index of the capping layer and the refractive index of the light extraction layer can be greater than or equal to about 0.5, and the difference between the refractive index of the first inorganic encapsulation layer and the refractive index of the light extraction layer can be greater than or equal to about 0.46.

[0015] The light extraction layer may include: a first light extraction region disposed in the transmission region; and a second light extraction region disposed on the plurality of display elements. The thickness of the first cover region may be greater than or equal to about 90 nm and less than or equal to about 150 nm, the thickness of the second cover region may be greater than or equal to about 60 nm and less than or equal to about 85 nm, the thickness of the first light extraction region may be greater than or equal to about 50 nm and less than or equal to about 220 nm, and the thickness of the second light extraction region may be greater than or equal to about 10 nm and less than or equal to about 40 nm.

[0016] The capping layer may include: a first capping region disposed in the transmissive region; and a second capping region disposed on the plurality of display elements. The light extraction layer may include: a first light extraction region disposed on the first capping region; and a second light extraction region disposed on the second capping region. The refractive index of the capping layer may be greater than or equal to about 1.79 and less than or equal to 2.2.

[0017] The plurality of display elements may include a counter electrode formed as a single sheet to cover the plurality of display elements, and the counter electrode may include an opening disposed corresponding to the transmission region.

[0018] The plurality of display elements may include a counter electrode formed as a single sheet to cover the plurality of display elements, and the counter electrode may include: a first region corresponding to the plurality of display elements; and a second region corresponding to the transmissive region, the second region having a thickness less than that of the first region.

[0019] Inorganic and organic insulating layers can be disposed between the substrate and the plurality of display elements. At least one of the inorganic and organic insulating layers can include an opening or groove corresponding to the transmission region, and the second stacked structure can be located in the opening or groove.

[0020] The display device may also include an infrared sensor located on the lower surface of the substrate, the infrared sensor being positioned corresponding to the sensor area.

[0021] The display device may also include a lower electrode layer located below the auxiliary pixels, the lower electrode layer being configured corresponding to the auxiliary pixels.

[0022] According to another embodiment, a display device includes a transmissive region and a display region surrounding at least a portion of the transmissive region, wherein the display device includes: a substrate; a plurality of display elements located in the display region; a thin-film encapsulation layer superimposed on the transmissive region and covering the plurality of display elements; a capping layer disposed between the plurality of display elements and the thin-film encapsulation layer and superimposed on the transmissive region; and a light extraction layer disposed between the capping layer and the thin-film encapsulation layer, wherein at least one of the capping layer and the light extraction layer disposed in the region corresponding to the transmissive region has a greater thickness than the region disposed corresponding to the plurality of display elements.

[0023] The refractive index of the light extraction layer can be less than that of the capping layer and the first inorganic encapsulation layer.

[0024] The cover layer may include: a first cover region disposed in the transmissive region; and a second cover region disposed on the plurality of display elements, wherein the first cover region may have a greater thickness than the second cover region.

[0025] The light extraction layer may include: a first light extraction region disposed in the transmission region; and a second light extraction region disposed on the plurality of display elements, wherein the first light extraction region may have a greater thickness than the second light extraction region.

[0026] The plurality of display elements may include a counter electrode formed as a single sheet to cover the plurality of display elements, and the counter electrode may include: a first region corresponding to the plurality of display elements; and a second region corresponding to the transmissive region, the second region having a thickness less than that of the first region. Attached Figure Description

[0027] The above and other aspects, features, and advantages of certain disclosed embodiments will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:

[0028] Figure 1A This is a perspective view of a display device according to an embodiment;

[0029] Figure 1B This is a perspective view of a display device according to another embodiment;

[0030] Figure 2 This is a cross-sectional view of a display device according to an embodiment;

[0031] Figure 3 This is a plan view of the display panel according to an embodiment;

[0032] Figure 4 It is partially shown Figure 3 A plan view of the sensor area;

[0033] Figure 5 This is a cross-sectional view of a display device according to an embodiment;

[0034] Figure 6 This is a cross-sectional view of a display device according to another embodiment;

[0035] Figure 7A This is a cross-sectional view of a display device according to another embodiment;

[0036] Figure 7B This is a cross-sectional view of a display device according to another embodiment;

[0037] Figure 8 This is a cross-sectional view of a display device according to another embodiment;

[0038] Figure 9 It is used for manufacturing Figure 5 A perspective view of the first and second masks of the stacked structure;

[0039] Figure 10A This is a cross-sectional view illustrating the process in a method of manufacturing a display device according to an embodiment;

[0040] Figure 10B This is a cross-sectional view illustrating the process in a method of manufacturing a display device according to an embodiment;

[0041] Figure 11A This is a cross-sectional view based on a comparative example used for comparison with the embodiments;

[0042] Figure 11B It is shown that it includes Figure 5 A diagram illustrating an example of infrared transmittance of the transmissive portion in a display device;

[0043] Figure 11C It is shown that it includes Figure 6 A diagram illustrating an example of infrared transmittance of the transmissive portion in a display device; and

[0044] Figure 11D It is shown Figure 5 A diagram showing examples of infrared transmittance of the transmissive portion and visible light transmittance of the display area in a display device. Detailed Implementation

[0045] Reference will now be made in detail to the embodiments, examples of which are illustrated in the accompanying drawings, wherein the same reference numerals always denote the same elements. In this respect, the embodiments may take different forms and should not be construed as limited to the description set forth herein. Therefore, the embodiments are described below with reference to the drawings only to explain various aspects of this description. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. Throughout the disclosure, the expression “at least one of a, b, and c” means only a, only b, only c, both a and b, both a and c, both b and c, all a, b, and c, or variations thereof.

[0046] The exemplary embodiments will now be described in more detail with reference to the accompanying drawings. The same or corresponding reference numerals are assigned to the same components regardless of the drawing numbers, and redundant descriptions are omitted.

[0047] While terms such as "first" and "second" can be used to describe various components, such components are not limited to these terms. The terms are used only to distinguish one component from another.

[0048] Unless they have a distinctly different meaning in the context, a singular expression includes a plural expression.

[0049] In this specification, it will be understood that the terms “comprising,” “having,” and “including” are intended to indicate the presence of features, quantities, steps, actions, components, parts, or combinations thereof disclosed in the specification, and are not intended to exclude the possibility that one or more other features, quantities, steps, actions, components, parts, or combinations thereof may be present or added.

[0050] It will be understood that when a layer, region, or component is referred to as being "formed on" another layer, region, or component, that layer, region, or component may be formed directly or indirectly on said other layer, region, or component. That is, for example, intermediate layers, regions, or components may exist.

[0051] For ease of explanation, the dimensions of the components in the accompanying drawings may be exaggerated. In other words, since the dimensions and thicknesses of the components in the accompanying drawings are arbitrarily shown for ease of explanation, the following embodiments are not limited thereto.

[0052] When an embodiment can be implemented differently, the specific process sequence can be performed differently than the described sequence. For example, two consecutively described processes can be performed substantially simultaneously or in the reverse order of the described sequence.

[0053] In the following embodiments, when multiple layers, regions, or elements are referred to as being "connected," it will be understood that the multiple layers, regions, or elements can be directly connected or that there are intermediate portions between the multiple layers, regions, or elements. For example, when multiple layers, regions, or elements are referred to as being "electrically connected," the multiple layers, regions, or elements can be directly electrically connected or the multiple layers, regions, or elements can be indirectly electrically connected and there may be intermediate portions.

[0054] Figure 1A This is a perspective view of display device 1 according to an embodiment. Figure 1B This is a perspective view of a display device 1 according to another embodiment.

[0055] Reference Figure 1A The display device 1 includes a display area DA and a non-display area NDA, wherein the display area DA displays an image, and the non-display area NDA does not display an image. The display device 1 can provide a main image via light emitted from a plurality of main pixels Pm arranged in the display area DA.

[0056] Display device 1 includes a sensor area SA. The sensor area SA may be an area beneath which components such as sensors using infrared light, visible light, or sound are arranged. The sensor area SA may include a transmission area TA through which light and / or sound from the components is output to the outside, or received from the outside. In an embodiment, when infrared light passes through the sensor area SA, depending on the structure of the transmission area TA, the infrared transmittance of the entire sensor area SA may be greater than or equal to about 15% and less than or equal to about 90%.

[0057] In an embodiment, multiple auxiliary pixels Pa can be provided in the sensor region SA, and a predetermined image can be provided by using light emitted from the multiple auxiliary pixels Pa. The image provided from the sensor region SA is an auxiliary image with a lower resolution than the image provided by the display region DA. That is, the sensor region SA includes a transmissive region TA through which light and / or sound can pass, therefore, the number of auxiliary pixels Pa per unit area can be less than the number of main pixels Pm per unit area in the display region DA.

[0058] The sensor region SA can be at least partially surrounded by the display region DA, and in the embodiment, Figure 1A The sensor area SA is shown, completely surrounded by the display area DA.

[0059] exist Figure 1B In, with Figure 1A The same reference numerals in the accompanying drawings denote the same elements, and their detailed descriptions are omitted.

[0060] Reference Figure 1B The sensor area SA can be located on one side of the display area DA. However, as... Figure 1B The length of the sensor region SA shown in the y-direction is not limited to Figure 1B The feature shown is that the length in the y-direction can be modified in various ways as needed.

[0061] In the following description, organic light-emitting display devices will be used as examples of display device 1 according to embodiments. However, in another embodiment, various types of display devices, such as inorganic light-emitting (EL) display devices, quantum dot light-emitting display devices, etc., can be used as display device 1.

[0062] Figure 1A The illustration shows a sensor region SA positioned on one side (upper right side) of a display area DA with a square shape. However, in another embodiment, the display area DA can have a circular shape, an elliptical shape, or a polygonal shape such as a triangle or a pentagon, and the position and number of sensor regions SA can be modified in various ways.

[0063] Figure 2 It is along Figure 1A A cross-sectional view of the display device 1 according to the embodiment, taken by line A-A'.

[0064] Reference Figure 2 The display device 1 may include: a display panel 10, including display elements; and a component 20, corresponding to the sensor area SA.

[0065] The display panel 10 may include a substrate 100, a display element layer 200 located on the substrate 100, and a thin film encapsulation layer 300 covering the display element layer 200. In addition, the display panel 10 may also include a lower protective film 175 disposed under the substrate 100.

[0066] The substrate 100 may comprise glass or a polymer resin. The substrate 100 comprising a polymer resin may be flexible, rollable, or bendable. The substrate 100 may have a multilayer structure (not shown) comprising a layer containing a polymer resin and an inorganic layer.

[0067] The display element layer 200 may include: a circuit layer including a main thin-film transistor TFT disposed in the display area DA and an auxiliary thin-film transistor TFT' disposed in the sensor area SA; a main organic light-emitting diode OLED and an auxiliary organic light-emitting diode OLED', serving as display elements; an insulating layer IL' disposed between the substrate 100 and the thin-film transistors TFT and TFT'; and an inorganic insulating layer IL disposed between the thin-film transistors TFT and TFT' and the organic light-emitting diodes OLED and OLED'.

[0068] Additionally, the transmission region TA can be located in the sensor region SA where no auxiliary thin-film transistors (TFTs) and display elements are arranged. The transmission region TA can be the area through which light / signal emitted from component 20 or incident on component 20 passes.

[0069] Component 20 can be configured to overlap with sensor region SA in a plan view. Component 20 may include electronic elements that emit or receive light or sound. For example, component 20 may include a sensor that receives light (e.g., an infrared sensor), a sensor that outputs and senses light or sound to measure distance or sense fingerprints, a small lamp that emits light, or a speaker that outputs sound. The light-responsive electronic elements may use light of various wavelengths, such as visible light, infrared, ultraviolet, etc. Multiple components 20 may be located in sensor region SA. For example, a light emitting device and a light receiving device may be disposed as component 20 in a single sensor region SA. Optionally, a component 20 may include a light emitting portion and a light receiving portion.

[0070] The lower electrode layer BSM can be located in the sensor region SA, and the lower electrode layer BSM can be stacked with the auxiliary pixel Pa in a planar view. That is, the lower electrode layer BSM can be disposed below the auxiliary thin-film transistor TFT' and stacked with the auxiliary thin-film transistor TFT'. In other words, the lower electrode layer BSM can prevent external light from reaching the auxiliary pixel Pa, including the auxiliary thin-film transistor TFT'. For example, the lower electrode layer BSM can prevent light emitted from component 20 from reaching the auxiliary pixel Pa. In addition, a constant voltage or signal is applied to the lower electrode layer BSM to prevent damage to the pixel circuit due to electrostatic discharge. The lower electrode layer BSM can be formed of a reflective conductive material (e.g., metal).

[0071] The thin-film encapsulation layer 300 may include at least one inorganic encapsulation layer and at least one organic encapsulation layer. In this regard, see reference... Figure 2 The thin-film encapsulation layer 300 may include a first inorganic encapsulation layer 310 and a second inorganic encapsulation layer 330, and an organic encapsulation layer 320 disposed between the first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330.

[0072] The organic encapsulation layer 320 may include polymeric materials. For example, the organic encapsulation layer 320 may include polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, hexamethyldisiloxane, acrylic resins (e.g., polymethyl methacrylate, polyacrylic acid, etc.) or combinations thereof.

[0073] The first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 may comprise one or more inorganic insulating materials selected from the group consisting of alumina, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride. The second inorganic encapsulation layer 330 may cover the organic encapsulation layer 320. The second inorganic encapsulation layer 330 is deposited at the edge region of the display device 1 to directly contact the first inorganic encapsulation layer 310, thereby preventing the organic encapsulation layer 320 from being exposed to the outside of the display device 1.

[0074] A lower protective film 175 is attached to the lower portion of the substrate 100 to protect and support the substrate 100. The lower protective film 175 may include an opening 175OP corresponding to the sensor region SA. Because the lower protective film 175 includes the opening 175OP, the light transmittance of the sensor region SA can be improved. The lower protective film 175 may include polyethylene terephthalate or polyimide. Alternatively, when the substrate 100 includes glass, the lower protective film 175 may be omitted.

[0075] The area of ​​the sensor region SA can be larger than the area of ​​the area where the assembly 20 is arranged. Therefore, the area of ​​the opening 175OP included in the lower protective film 175 may not be equal to the area of ​​the sensor region SA. For example, the area of ​​the opening 175OP may be smaller than the area of ​​the sensor region SA.

[0076] Although not shown in the accompanying drawings, components such as an input sensor for sensing touch input, an anti-reflective layer including a polarizer and delay unit or a color filter and a black matrix, and a transparent window may be further arranged on the display panel 10.

[0077] In another embodiment, the thin-film encapsulation layer 300 is used to protect the display element layer 200, but in another embodiment, a sealing substrate bonded to the substrate 100 via a sealant or glass frit can be used as the encapsulation substrate for the display element layer 200.

[0078] Figure 3 This is a plan view of the display panel 10 according to an embodiment.

[0079] Reference Figure 3 The display panel 10 includes a plurality of main pixels Pm disposed in a display area DA. Each of the main pixels Pm may include a display element such as an organic light-emitting diode (OLED). Each of the main pixels Pm may emit light, for example, red, green, blue, or white light, via the organic light-emitting diode. In the specification, as described above, the main pixel Pm can be understood as a pixel that emits red, green, blue, or white light. The display area DA is referred to above. Figure 2 The described thin-film encapsulation layer 300 covers the display area DA, thereby protecting it from external air or moisture.

[0080] The sensor region SA may be located within the display region DA, and multiple auxiliary pixels Pa are disposed within the sensor region SA. Each of the auxiliary pixels Pa may include a display element such as an organic light-emitting diode (OLED). Each of the auxiliary pixels Pa may emit light, for example, red, green, blue, or white light, via the OLED. In this specification, as described above, the auxiliary pixel Pa can be understood as a pixel that emits red, green, blue, or white light. Additionally, the sensor region SA includes a transmissive region TA disposed between the auxiliary pixels Pa.

[0081] In one embodiment, a main pixel Pm and an auxiliary pixel Pa may include the same pixel circuitry. However, one or more embodiments are not limited thereto. That is, the pixel circuitry included in the main pixel Pm and the pixel circuitry included in the auxiliary pixel Pa may be different from each other.

[0082] The sensor area SA includes the transmission area TA; therefore, the resolution of the sensor area SA can be less than the resolution of the display area DA. For example, the resolution of the sensor area SA can be half the resolution of the display area DA. In some embodiments, the resolution of the display area DA can be 400 ppi or higher, and the resolution of the sensor area SA can be about 200 ppi or higher.

[0083] Each of the main pixel Pm and the auxiliary pixel Pa can be electrically connected to external circuitry in the non-display area NDA. In the non-display area NDA, a first scan drive circuit 110, a second scan drive circuit 120, a terminal 140, a data drive circuit 150, a first power line 160, and a second power line 170 can be arranged.

[0084] The first scan driving circuit 110 can provide scan signals to each of the main pixel Pm and auxiliary pixel Pa via scan line SL. The first scan driving circuit 110 can also provide emission control signals to each pixel via emission control line EL. The second scan driving circuit 120 can be parallel to the first scan driving circuit 110 and have a display area DA disposed between them. Some of the main pixels Pm and auxiliary pixels Pa in the display area DA can be electrically connected to the first scan driving circuit 110, while other pixels Pm and Pa can be connected to the second scan driving circuit 120. In another embodiment, the second scan driving circuit 120 can be omitted.

[0085] Terminal 140 may be located on one side of substrate 100. Terminal 140 may be exposed instead of covered by an insulating layer and may be electrically connected to a printed circuit board (PCB).

[0086] The PCB-P terminal of the printed circuit board (PCB) can be electrically connected to the terminal 140 of the display panel 10. The PCB can transmit control signals or power from the controller (not shown) to the display panel 10. The control signals generated by the controller can be transmitted via the PCB to the first scan drive circuit 110 and the second scan drive circuit 120, respectively. The controller can supply first power and second power to the display panel 10 via the first power line 160 and the second power line 170, respectively. The first power with a first power voltage and the second power with a second power voltage are supplied to the display panel 10 via the first connection line 161 and the second connection line 171. The first power voltage is supplied to each of the main pixel Pm and the auxiliary pixel Pa via the drive voltage line PL connected to the first power line 160, and the second power voltage can be supplied to the counter electrode of each of the main pixel Pm and the auxiliary pixel Pa connected to the second power line 170.

[0087] The data driving circuit 150 is electrically connected to the data line DL. Data signals from the data driving circuit 150 can be provided to each of the main pixel Pm and auxiliary pixels Pa via the connection line 151 connected to terminal 140 and the data line DL connected to the connection line 151. Although Figure 3 The diagram shows the data driving circuit 150 disposed on a printed circuit board (PCB), but in another embodiment, the data driving circuit 150 may be disposed on the substrate 100. For example, the data driving circuit 150 may be disposed between the terminal 140 and the first power line 160, or disposed on one side of the substrate 100 between the terminal 140 and the terminal 140.

[0088] The first power line 160 may include a first sub-line 162 and a second sub-line 163 extending parallel to each other in the x-direction, with the display area DA disposed between the first sub-line 162 and the second sub-line 163. The second power line 170 is in the form of an annular shape with an opening to partially surround the display area DA.

[0089] Figure 4 It is partially shown Figure 3 A plan view of the sensor area SA, and Figure 5 It is along Figure 3 The line I-I' and Figure 4 The sectional view taken from line II-II'.

[0090] Reference Figure 4 According to an embodiment, auxiliary pixels Pa and a transmissive region TA are located in the sensor region SA of the display device 1. A predetermined number of auxiliary pixels Pa can be arranged continuously to form a pixel group Pg.

[0091] Pixel group Pg may include at least one auxiliary pixel Pa. In an embodiment, such as... Figure 4 As shown, a pixel group Pg may include four auxiliary pixels Pa arranged in two columns and two rows. However, in another embodiment, the number of auxiliary pixels Pa included in a pixel group Pg and the arrangement of the auxiliary pixels Pa can be modified in various ways. For example, a pixel group Pg may include three auxiliary pixels Pa arranged in one row.

[0092] Because the display element is not arranged in the transmissive region TA, the transmissive region TA has a higher light transmittance than the auxiliary pixel Pa, and multiple transmissive regions TA can be included in the sensor region SA. The transmissive regions TA can be arranged alternately with the pixel group Pg along a first direction (x-direction) and / or a second direction (y-direction). Optionally, the transmissive regions TA can be arranged to surround the pixel group Pg. Optionally, the pixel group Pg can be arranged to surround the transmissive regions TA.

[0093] Reference Figure 5According to an embodiment, the display device 1 includes a display area DA and a sensor area SA. A main pixel Pm is disposed in the display area DA, and auxiliary pixels Pa and a transmissive area TA are disposed in the sensor area SA.

[0094] Each of the main pixels Pm may include a main thin-film transistor (TFT), a main storage capacitor Cst, and a main organic light-emitting diode (OLED). Each of the auxiliary pixels Pa may include an auxiliary thin-film transistor (TFT'), an auxiliary storage capacitor Cst', and an auxiliary organic light-emitting diode (OLED').

[0095] Component 20 can be disposed below and superimposed on sensor region SA. Component 20 may include an infrared sensor for emitting / receiving infrared (IR). Since the transmission region TA is located within sensor region SA, IR signals emitted from / incident on component 20 can pass through sensor region SA. For example, light emitted from component 20 can travel through transmission region TA in the z-direction, and light incident on component 20 from outside display device 1 can travel through transmission region TA in the -z-direction.

[0096] In the following description, the structure of the elements included in the display device 1 according to the embodiment will be described.

[0097] The substrate 100 may comprise glass or a polymeric resin. The polymeric resin may include polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, cellulose acetate propionate, etc. The substrate 100 comprising the polymeric resin may be flexible, rollable, or bendable. The substrate 100 may have a multilayer structure (not shown) comprising a layer containing the polymeric resin and an inorganic layer.

[0098] A buffer layer 111 is disposed on the substrate 100 to reduce or block the penetration of impurities, moisture, or external air from the lower part of the substrate 100 and to provide a flat surface on the substrate 100. The buffer layer 111 may comprise inorganic materials, organic materials, or inorganic-organic composite materials such as oxides or nitrides, and may have a single-layer or multi-layer structure comprising inorganic and / or organic materials. A barrier layer (not shown) for preventing the penetration of external air may be further disposed between the substrate 100 and the buffer layer 111. In some embodiments, the buffer layer 111 may comprise silicon oxide (SiO2) or silicon nitride (SiN). x The buffer layer 111 may include a first buffer layer 111a and a second buffer layer 111b stacked on the first buffer layer 111a.

[0099] In the sensor region SA, the lower electrode layer BSM can be disposed between the first buffer layer 111a and the second buffer layer 111b. In another embodiment, the lower electrode layer BSM can be disposed between the substrate 100 and the first buffer layer 111a. The lower electrode layer BSM is located below the auxiliary thin-film transistor TFT' so as to be completely superimposed with the auxiliary thin-film transistor TFT' in a plan view, and can prevent the auxiliary thin-film transistor TFT' from deteriorating due to light emitted from the component 20.

[0100] Furthermore, the lower electrode layer (BSM) can be connected to the wiring GCL located in another layer via contact holes. The lower electrode layer (BSM) can receive a constant voltage or signal supplied from the wiring GCL. For example, the lower electrode layer (BSM) can receive a drive voltage (first power voltage) or a scan signal. Because the lower electrode layer (BSM) is supplied with a constant voltage or signal, the possibility of electrostatic discharge can be significantly reduced. The lower electrode layer (BSM) can include aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), neodymium (Nd), iridium (Ir), chromium (Cr), nickel (Ni), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and / or copper (Cu). The lower electrode layer (BSM) can have a single-layer or multi-layer structure comprising the above materials.

[0101] The main thin-film transistor (TFT) and the auxiliary thin-film transistor (TFT') can be disposed on the buffer layer 111. The main TFT includes a first semiconductor layer A1, a first gate electrode G1, a first source electrode S1, and a first drain electrode D1, and the auxiliary TFT' includes a second semiconductor layer A2, a second gate electrode G2, a second source electrode S2, and a second drain electrode D2. The main TFT is connected to the main organic light-emitting diode (OLED) in the display area DA to drive the OLED. The auxiliary TFT is connected to the auxiliary organic light-emitting diode (OLED') in the sensor area SA to drive the OLED.

[0102] The first semiconductor layer A1 and the second semiconductor layer A2 are located on the buffer layer 111 and may include polycrystalline silicon. In another embodiment, the first semiconductor layer A1 and the second semiconductor layer A2 may include amorphous silicon. In another embodiment, both the first semiconductor layer A1 and the second semiconductor layer A2 may include oxides selected from at least one of indium (In), gallium (Ga), tin (Sn), zirconium (Zr), vanadium (V), hafnium (Hf), cadmium (Cd), germanium (Ge), chromium (Cr), titanium (Ti), and zinc (Zn). Both the first semiconductor layer A1 and the second semiconductor layer A2 may include a channel region and impurity-doped source and drain regions.

[0103] The second semiconductor layer A2 can be stacked with the lower electrode layer BSM, and the second buffer layer 111b is disposed between them. In an embodiment, the width and length of the second semiconductor layer A2 can be smaller than the width and length of the lower electrode layer BSM, so that when projected from a direction perpendicular to the substrate 100, the second semiconductor layer A2 can be completely stacked with the lower electrode layer BSM.

[0104] The first gate insulating layer 112 may cover the first semiconductor layer A1 and the second semiconductor layer A2. The first gate insulating layer 112 may include materials such as silicon oxide (SiO2) and silicon nitride (SiN). x Inorganic insulating materials such as silicon oxynitride (SiON), aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2), and zinc oxide (ZnO2) are used. The first gate insulating layer 112 may have a single-layer or multi-layer structure including inorganic insulating materials.

[0105] The first gate electrode G1 and the second gate electrode G2 can be disposed on the first gate insulating layer 112, thereby being stacked with the first semiconductor layer A1 and the second semiconductor layer A2, respectively. The first gate electrode G1 and the second gate electrode G2 include molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), etc., and can each have a single-layer or multi-layer structure. For example, both the first gate electrode G1 and the second gate electrode G2 can have a single-layer structure including Mo.

[0106] The second gate insulating layer 113 may cover the first gate electrode G1 and the second gate electrode G2. The second gate insulating layer 113 may include materials such as silicon oxide (SiO2) and silicon nitride (SiN). x The second gate insulating layer 113 may have a single-layer or multi-layer structure comprising inorganic insulating materials, such as silicon oxynitride (SiON), aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2), and zinc oxide (ZnO2).

[0107] The first upper electrode CE2 of the main storage capacitor Cst and the second upper electrode CE2' of the auxiliary storage capacitor Cst' can be disposed on the second gate insulating layer 113.

[0108] In the display area DA, the first upper electrode CE2 can be stacked with the first gate electrode G1 disposed below it. The first gate electrode G1 and the first upper electrode CE2, which are stacked on top of each other and with the second gate insulating layer 113 disposed between them, can form the main storage capacitor Cst. The first gate electrode G1 can be the first lower electrode CE1 of the main storage capacitor Cst.

[0109] In the sensor region SA, the second upper electrode CE2' can be stacked with the second gate electrode G2 disposed below it. The second gate electrode G2 and the second upper electrode CE2', which are stacked together and with the second gate insulating layer 113 disposed between them, can form an auxiliary storage capacitor Cst'. The second gate electrode G2 can be the second lower electrode CE1' of the auxiliary storage capacitor Cst'.

[0110] Both the first upper electrode CE2 and the second upper electrode CE2' can include, for example, Al, Pt, Pd, Ag, Mg, Au, Ni, Nd, Ir, Cr, Ca, Mo, Ti, W and / or Cu, and can have a single-layer or multi-layer structure.

[0111] The first interlayer insulating layer 115 may cover the first upper electrode CE2 and the second upper electrode CE2'. The first interlayer insulating layer 115 may include materials such as silicon oxide (SiO2) and silicon nitride (SiN). x Insulating materials made of silicon oxynitride (SiON), aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2) and zinc oxide (ZnO2).

[0112] The first source electrode S1, the second source electrode S2, the first drain electrode D1, and the second drain electrode D2 are disposed on the first interlayer insulating layer 115. The source electrodes S1 and S2, and the drain electrodes D1 and D2 may each comprise a conductive material including Mo, Al, Cu, Ti, etc., and may have a single-layer or multi-layer structure comprising the aforementioned materials. For example, the source electrodes S1 and S2, and the drain electrodes D1 and D2 may each have a multi-layer structure comprising Ti / Al / Ti.

[0113] The second interlayer insulating layer 117 may cover the source electrodes S1 and S2 and the drain electrodes D1 and D2. The second interlayer insulating layer 117 may include materials such as silicon oxide (SiO2) and silicon nitride (SiN). x Insulating materials made of silicon oxynitride (SiON), aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2) and zinc oxide (ZnO2).

[0114] The main connection metal CM and the auxiliary connection metal CM' can be disposed on the second interlayer insulating layer 117. The main connection metal CM and the auxiliary connection metal CM' can be electrically connected to the main thin-film transistor TFT and the auxiliary thin-film transistor TFT' by contacting the first drain electrode D1 of the main thin-film transistor TFT and the second drain electrode D2 of the auxiliary thin-film transistor TFT' respectively through openings formed in the second interlayer insulating layer 117.

[0115] Wiring (not shown) made of the same material as the main connecting metal CM and the auxiliary connecting metal CM', but separate from the main connecting metal CM and the auxiliary connecting metal CM', can be provided on the second interlayer insulation layer 117.

[0116] The planarization layer 119 can be disposed on the main connection metal CM and the auxiliary connection metal CM'. The planarization layer 119 can have a flat upper surface, such that the first pixel electrode 221 and the second pixel electrode 221' formed thereon can have a planarized upper surface.

[0117] The planarization layer 119 may include a single-layer or multi-layer structure comprising organic and / or inorganic materials. The planarization layer 119 may include general-purpose polymers (benzocyclobutene (BCB), polyimide, hexamethyldisiloxane (HMDSO), polymethyl methacrylate, or polystyrene), phenolic polymer derivatives, acrylic polymers, imide polymers, aryl ether polymers, amide polymers, fluoride polymers, p-xylene polymers, vinyl alcohol polymers, and blends thereof. x Materials include silicon oxynitride (SiON), aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2), and zinc oxide (ZnO2). After the planarization layer 119 is applied, when the upper surface has an uneven surface, chemical polishing and mechanical polishing can be performed to provide a flat upper surface.

[0118] An opening for exposing the main interconnect metal CM is located in the planarization layer 119, and the first pixel electrode 221 can be electrically connected to the main thin-film transistor TFT by contacting the main interconnect metal CM through the opening.

[0119] In addition, the planarization layer 119 includes an opening that exposes the auxiliary connection metal CM', so that the second pixel electrode 221' can be electrically connected to the auxiliary thin film transistor TFT' by contacting the auxiliary connection metal CM' through the opening.

[0120] Both the first pixel electrode 221 and the second pixel electrode 221' may comprise conductive oxides such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO), or zinc aluminum oxide (AZO). In another embodiment, both the first pixel electrode 221 and the second pixel electrode 221' may comprise a reflective layer comprising Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, or mixtures thereof. In another embodiment, the first pixel electrode 221 and the second pixel electrode 221' may further comprise a layer comprising ITO, IZO, ZnO, or In2O3 disposed on / under the reflective layer. In some embodiments, the first pixel electrode 221 and the second pixel electrode 221' may have a stacked structure comprising ITO / Ag / ITO.

[0121] The pixel defining layer 121 may cover the boundary of each of the first pixel electrode 221 and the second pixel electrode 221'. The pixel defining layer 121 is stacked with each of the first pixel electrode 221 and the second pixel electrode 221', and includes a first opening OP1 and a second opening OP2 defining the light-emitting area of ​​the pixel. The pixel defining layer 121 increases the distance between the edges of the first pixel electrode 221 and the second pixel electrode 221' and the counter electrode 223 disposed on the first pixel electrode 221 and the second pixel electrode 221', to prevent arcing at the edges of the first pixel electrode 221 and the second pixel electrode 221'. The pixel defining layer 121 may comprise an organic insulating material such as polyimide, polyamide, acrylic resin, benzocyclobutene, hexamethyldisiloxane (HMDSO), and phenolic resin, and may be obtained by spin coating or the like.

[0122] The first functional layer 222a covers the exposed surfaces of the first pixel electrode 221 and the second pixel electrode 221', as well as the pixel defining layer 121. The first functional layer 222a may have a single-layer or multi-layer structure. The first functional layer 222a may include a hole transport layer (HTL) with a single-layer structure. Optionally, the first functional layer 222a may include a hole injection layer (HIL) and an HTL. The first functional layer 222a may be integrally formed to correspond to the main pixel Pm included in the display area DA and the auxiliary pixel Pa included in the sensor area SA.

[0123] The first emitting layer 222b and the second emitting layer 222b' are disposed on the first functional layer 222a to correspond to the first pixel electrode 221 and the second pixel electrode 221', respectively. The first emitting layer 222b and the second emitting layer 222b' may respectively comprise polymer materials or low molecular weight materials, and may emit red light, green light, blue light or white light.

[0124] The second functional layer 222c may be located on the first emission layer 222b and the second emission layer 222b'. The second functional layer 222c may have a single-layer or multi-layer structure. The second functional layer 222c may include an electron transport layer (ETL) and / or an electron injection layer (EIL). The second functional layer 222c may be integrally formed to correspond to the main pixel Pm included in the display area DA and the auxiliary pixel Pa included in the sensor area SA. The first functional layer 222a and / or the second functional layer 222c may be omitted.

[0125] Counter electrode 223 is disposed on the second functional layer 222c. Counter electrode 223 may include a conductive material with low work function. For example, counter electrode 223 may include a (semi-)transparent layer comprising Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, or alloys thereof. Optionally, counter electrode 223 may also include a layer comprising ITO, IZO, ZnO, or In2O3 disposed on the (semi-)transparent layer comprising the above-mentioned materials. Counter electrode 223 may be integrally formed to correspond to the main pixel Pm and auxiliary pixel Pa respectively included in the display area DA and sensor area SA.

[0126] The layer from the first pixel electrode 221 to the counter electrode 223 in the display area DA can be used to construct a main organic light-emitting diode (OLED). The layer from the second pixel electrode 221' to the counter electrode 223 in the sensor area SA can be used to construct an auxiliary organic light-emitting diode (OLED').

[0127] In an embodiment, the stacked structure 250 may be disposed on the counter electrode 223 to improve light extraction efficiency. The stacked structure 250 may include a capping layer 251 and a light extraction layer 253. The stacked structure 250 may include: a first stacked structure 250b corresponding to a plurality of display elements included in the main pixel Pm and the auxiliary pixel Pa; and a second stacked structure 250a corresponding to the transmissive region TA. In an embodiment, the first stacked structure 250b has a thickness different from that of the second stacked structure 250a.

[0128] Since the display device 1 comprises multiple layers, light emitted from the emitting layers 222b and 222b' or the component 20 must pass through the multiple layers above the emitting layers 222b and 222b' or the component 20 to be emitted to the outside of the display device 1. In this case, when the light generated by the emitting layers 222b and 222b' passes through the multiple layers above the emitting layers 222b and 222b', a large amount of light is extinguished.

[0129] One important factor contributing to extinction is total internal reflection at the interfaces between adjacent layers. To prevent extinction due to total internal reflection, methods can be applied to prevent total internal reflection at the interfaces between adjacent layers. This can be achieved by adjusting the refractive index and thickness of each layer.

[0130] For example, the following equation can be considered to design the refractive index and thickness of each layer.

[0131] n*d=λ / 4

[0132] Here, n represents the refractive index, d represents the thickness, and λ represents the median of the emission or transmission wavelength range.

[0133] In an embodiment, the refractive index and / or thickness of the stacked structure 250 above the counter electrode 223 can be designed to increase visible light extraction relative to the main pixel Pm and the auxiliary pixel Pa, and to increase infrared light extraction relative to the transmission region TA.

[0134] Reference Figure 5 A capping layer 251 can be disposed on the counter electrode 223. The capping layer 251 can cover the main pixel Pm, the auxiliary pixel Pa, and the transmissive region TA. Furthermore, in the capping layer 251, the thickness t1 of the first capping region 251a in the transmissive region TA can differ from the thickness t2 of the second capping region 251b above the display elements (i.e., the main OLED and the auxiliary OLED') in the sensor region SA and the display region DA. Light passing through the main pixel Pm and the auxiliary pixel Pa can primarily consist of visible light, while light passing through the transmissive region TA can primarily consist of infrared light.

[0135] Therefore, in the embodiment, a stacked structure capable of improving the transmittance of visible light is provided in the region where the main pixel Pm and the auxiliary pixel Pa are arranged, and a stacked structure capable of improving the transmittance of infrared light is provided in the region where the transmission region TA is arranged.

[0136] Therefore, in the embodiment, the thickness of the cover layer 251 may be inconsistent throughout the display area DA and the sensor area SA.

[0137] In the embodiments, thickness represents the vertical distance from the lower surface to the upper surface of the layer.

[0138] In an embodiment, the thickness t1 of the first cover region 251a located in the transmission region TA can be greater than the thickness t2 of the second cover region 251b located above the main organic light-emitting diode (OLED) and the auxiliary organic light-emitting diode (OLED)'. The thickness t1 of the first cover region 251a can be set to about 1.1 times to about 10 times the thickness t2 of the second cover region 251b.

[0139] Infrared light has a longer wavelength than visible light. Therefore, when the thickness t1 of the first cover region 251a is greater than the thickness t2 of the second cover region 251b, the resonance effect of infrared light can be improved and the infrared transmittance can be increased.

[0140] In addition, the refractive index of the capping layer 251 can be set in the range of 1.79 to 2.2 in order to improve the infrared transmittance of the transmission region TA.

[0141] The capping layer 251 may include at least one selected from, for example, tris(8-hydroxyquinoline)aluminum (Alq3), ZnSe, 2,5-bis(6'-(2',2”-bipyridyl))-1,1-dimethyl-3,4-diphenylthiophene, 4'-bis[N-(1-naphthyl)-N-phenyl-amino]biphenyl (a-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD), and 1,1'-bis(di-4-tolylaminophenyl)cyclohexane (TAPC).

[0142] To improve light extraction in the resonant structure, an appropriate degree of light reflection is necessary. Furthermore, when the refractive index difference between the capping layer 251 and the thin-film encapsulation layer 300 is small, light will be insufficiently reflected at the interface, and resonance will occur inappropriately. Therefore, a light extraction layer 253 with a low refractive index can be disposed between the capping layer 251 and the thin-film encapsulation layer 300 to increase the refractive index difference.

[0143] The light extraction layer 253 may include a light-transmitting material. Furthermore, the refractive index of the light extraction layer 253 may differ from the refractive index of the capping layer 251 or the refractive index of the thin-film encapsulation layer 300. For example, in an embodiment, the difference in refractive index between the first inorganic encapsulation layer 310 and the light extraction layer 253 may be set to be greater than or equal to approximately 0.46.

[0144] In addition, the light extraction layer 253 may include materials selected from CaF2, NaF, Na3AlF6, and SiO2. x At least one of the group consisting of AlF3, LiF, MgF2 and IF3.

[0145] The light extraction layer 253 can satisfy the above equation, i.e., n*d = λ / 4, in order to form a resonant structure. In an embodiment, the light extraction layer 253 includes a first light extraction region 253a disposed in the transmission region TA and a second light extraction region 253b disposed on the main organic light-emitting diode OLED and the auxiliary organic light-emitting diode OLED', and as shown... Figure 6 As disclosed, the thickness t3 of the first light extraction region 253a can be greater than the thickness t4 of the second light extraction region 253b.

[0146] The infrared light emitted from component 20 has a longer wavelength than the visible light emitted from emitting layers 222b and 222b'. Therefore, in order to form a resonant structure in the transmission region TA, the thickness of the first light extraction region 253a can be set to be greater than the thickness of the second light extraction region 253b. In an embodiment, the thickness of the first light extraction region 253a can be set to approximately two to approximately ten times the thickness of the second light extraction region 253b.

[0147] In the display device 1 according to an embodiment, a thin-film encapsulation layer 300 is disposed on the light extraction layer 253. The thin-film encapsulation layer 300 may include at least one inorganic encapsulation layer and at least one organic encapsulation layer. Figure 5 The diagram illustrates a structure in which a first inorganic encapsulation layer 310, an organic encapsulation layer 320, and a second inorganic encapsulation layer 330 are stacked within a thin-film encapsulation layer 300. In another embodiment, the stacking order and the number of organic and inorganic encapsulation layers can be varied.

[0148] The first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 may comprise one or more inorganic insulating materials such as alumina, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride, and may be manufactured by chemical vapor deposition (CVD) or similar methods. The organic encapsulation layer 320 may comprise polymeric materials. Polymeric materials may include silicone resins, acrylic resins, epoxy resins, polyimide, polyethylene, etc.

[0149] Each of the first inorganic encapsulation layer 310, the organic encapsulation layer 320, and the second inorganic encapsulation layer 330 can be integrally formed to cover the display area DA and the sensor area SA.

[0150] The first inorganic encapsulation layer 310 may include a material with a high refractive index for inducing a resonance effect. Furthermore, to increase the transmittance of the transmission region TA, the difference in refractive index between the capping layer 251 and the light extraction layer 253 must be increased. Additionally, the difference in refractive index between the first inorganic encapsulation layer 310 and the light extraction layer 253 must be increased. The difference in refractive index between the capping layer 251 and the light extraction layer 253 may be greater than or equal to approximately 0.5. Furthermore, the difference in refractive index between the first inorganic encapsulation layer 310 and the light extraction layer 253 may be greater than or equal to approximately 0.46.

[0151] In addition, the light extraction layer 253 may include a first light extraction region 253a disposed in the transmission region TA and a second light extraction region 253b disposed on the main organic light-emitting diode OLED and the auxiliary organic light-emitting diode OLED'.

[0152] As described above, the first cover region 251a and the first light extraction region 253a can be referred to as the second stacked structure 250a. Furthermore, the second cover region 251b and the second light extraction region 253b can be referred to as the first stacked structure 250b.

[0153] Infrared light emitted from component 20 in the transmission region TA has a longer wavelength than visible light emitted from emitting layers 222b and 222b'. Therefore, in order to improve the transmittance of infrared light in the transmission region TA by utilizing the resonance effect, the thickness of the second stacked structure 250a can be greater than the thickness of the first stacked structure 250b.

[0154] Figure 6 This is a cross-sectional view of display device 1 according to another embodiment. Figure 6 In, with Figure 5 The same reference numerals in the accompanying drawings denote the same elements, and their detailed descriptions are omitted.

[0155] Reference Figure 6 According to an embodiment, the display device 1 includes a display area DA and a sensor area SA including a transmission area TA. The display device 1 includes a substrate 100, a first stacked structure 250b disposed on a plurality of display elements, and a second stacked structure 250a stacked with the transmission area TA.

[0156] The thickness t3 of the first light extraction region 253a can be set to improve the transmittance of infrared light emitted from the component 20 in the transmission region TA. Furthermore, the thickness t4 of the second light extraction region 253b can be set to improve the transmittance of visible light emitted from the first emitting layer 222b and the second emitting layer 222b'. Therefore, the thickness t3 of the first light extraction region 253a can be different from the thickness t4 of the second light extraction region 253b.

[0157] The thickness t3 of the first light extraction region 253a can be greater than or equal to about 50 nm and less than or equal to about 220 nm. For example, the thickness t3 of the first light extraction region 253a can be greater than or equal to about 170 nm and less than or equal to about 220 nm.

[0158] The thickness t1 of the first cover region 251a can be different from the thickness t2 of the second cover region 251b, and simultaneously, the thickness t3 of the first light extraction region 253a can be different from the thickness t4 of the second light extraction region 253b. The thicknesses t1 and t3 of the first cover region 251a and the first light extraction region 253a can be set to enhance the resonance effect of infrared light transmitted through the transmission region TA.

[0159] In this configuration, the thickness t1 of the first cover region 251a can be greater than or equal to about 50 nm and less than or equal to about 150 nm, and the thickness t3 of the first light extraction region 253a can be greater than or equal to about 20 nm and less than or equal to about 220 nm. Preferably, the thickness t1 of the first cover region 251a can be greater than or equal to about 90 nm and less than or equal to about 150 nm, the thickness t2 of the second cover region 251b can be greater than or equal to about 60 nm and less than or equal to about 85 nm, the thickness t3 of the first light extraction region 253a can be greater than or equal to about 50 nm and less than or equal to about 220 nm, and the thickness t4 of the second light extraction region 253b can be greater than or equal to about 10 nm and less than or equal to about 40 nm.

[0160] The refractive indices of the capping layer 251 and the light extraction layer 253 can be changed as needed. When the refractive index of the capping layer 251 is changed, the transmittance of visible light emitted from the main pixel Pm in the display area DA and the auxiliary pixel Pa in the sensor area SA can be changed.

[0161] If the refractive index of the capping layer 251 is in the range of 1.79 to 2.2, even if the refractive index of the capping layer 251 changes, the change in the transmittance of visible light emitted from the main pixel Pm in the display area DA and the auxiliary pixel Pa in the sensor area SA can be negligible. Therefore, when the refractive index of the capping layer 251 is in the range of 1.79 to 2.2, the transmittance of infrared light passing through the transmission area TA can be improved while maintaining the transmittance of visible light.

[0162] Figure 7A and Figure 7B This is a cross-sectional view of display device 1 according to another embodiment. Figure 7A and Figure 7B In, with Figure 5 The same reference numerals in the accompanying drawings denote the same elements, and their detailed descriptions are omitted.

[0163] Reference Figure 7A According to an embodiment, the display device 1 includes a display area DA and a sensor area SA including a transmission area TA. The display device 1 includes a substrate 100, a first stacked structure 250b located on a plurality of display elements, and a second stacked structure 250a stacked with the transmission area TA.

[0164] The display element layer 200 may include a counter electrode 223 integrally disposed throughout the display element layer 200 and formed as a single piece. In addition, the counter electrode 223 may include an opening 224 corresponding to the transmission region TA.

[0165] When the opening 224 is disposed in the transmission region TA and superimposed on the transmission region TA, the transmittance of infrared light emitted from the component 20 can be improved. Furthermore, the signal from the component 20 can be processed sufficiently and accurately.

[0166] Reference Figure 7B According to an embodiment, the display device 1 includes a display area DA and a sensor area SA including a transmission area TA. The display device 1 includes a substrate 100, a first stacked structure 250b located on a plurality of display elements, and a second stacked structure 250a stacked with the transmission area TA.

[0167] The display element layer 200 may include a counter electrode 223 integrally included in the display element layer 200. The counter electrode 223 may include a first region 223a corresponding to the display element layer 200 and a second region 223b corresponding to the transmissive region TA. Furthermore, the thickness t6 of the second region 223b may be less than the thickness t5 of the first region 223a.

[0168] The transmittance decreases as the thickness of the counter electrode 223 in the transmission region TA increases. When the thickness t6 of the second region 223b is less than the thickness t5 of the first region 223a, the transmittance of infrared light emitted from the component 20 can be improved. Furthermore, the signal from the component 20 can be processed sufficiently and accurately.

[0169] Figure 8 This is a cross-sectional view of display device 1 according to another embodiment. Figure 8 In, with Figure 5 The same reference numerals in the accompanying drawings denote the same elements, and their detailed descriptions are omitted.

[0170] Reference Figure 8 According to an embodiment, the display device 1 includes a display area DA and a sensor area SA including a transmission area TA. The display device 1 includes a substrate 100, a first stacked structure 250b located on a plurality of display elements, and a second stacked structure 250a stacked with the transmission area TA.

[0171] The inorganic insulating layer IL, the planarization layer 119, and the pixel defining layer 121 may be located between the substrate 100 and the display element layer 200. At least one of the inorganic insulating layer IL, the planarization layer 119, and the pixel defining layer 121 may include an opening or groove corresponding to the transmissive region TA.

[0172] Reference Figure 8The inorganic insulating layer IL may include an inorganic insulating layer opening OP3. The inorganic insulating layer opening OP3 may expose the upper surface of the buffer layer 111 or the upper surface of the substrate 100. The inorganic insulating layer opening OP3 may be stacked with a first opening of the first gate insulating layer 112, a second opening of the second gate insulating layer 113, a third opening of the first interlayer insulating layer 115, and a fourth opening of the second interlayer insulating layer 117, wherein the first to fourth openings correspond to the transmission region TA. The first to fourth openings may be formed separately by separate processes, or simultaneously by a single process. Optionally, the first to third openings may be formed simultaneously, and the fourth opening may be formed separately. When the first to fourth openings are obtained by separate processes, a step may be formed on the side surface of the inorganic insulating layer opening OP3.

[0173] Optionally, the inorganic insulating layer IL may include a recess that does not expose the buffer layer 111. For example, the first gate insulating layer 112 and the second gate insulating layer 113 in the inorganic insulating layer IL may be continuously arranged in the region corresponding to the transmission region TA, and the first interlayer insulating layer 115 and the second interlayer insulating layer 117 may respectively include a third opening and a fourth opening provided corresponding to the transmission region TA.

[0174] Optionally, the first gate insulating layer 112 may be disposed in the region corresponding to the transmission region TA, and the second gate insulating layer 113, the first interlayer insulating layer 115 and the second interlayer insulating layer 117 may include a second to a fourth opening disposed corresponding to the transmission region TA.

[0175] In another embodiment, the inorganic insulating layer IL may not include the inorganic insulating layer opening OP3 corresponding to the transmission region TA. This is because the inorganic insulating layer IL can have a transmittance of light that can be emitted from / received by the component 20, and therefore may not include the opening (inorganic insulating layer opening OP3) corresponding to the transmission region TA.

[0176] Furthermore, the planarization layer 119 and the pixel defining layer 121 may include an organic insulating layer opening OP4. The organic insulating layer opening OP4 may be stacked with the inorganic insulating layer opening OP3.

[0177] The second stack structure 250a can be located in the inorganic insulating layer opening OP3 or the organic insulating layer opening OP4.

[0178] Because the organic and inorganic stacked structures on the substrate 100 in the transmission region TA are removed, signals from the component 20 can be processed precisely.

[0179] Figure 9A first mask 410 and a second mask 420 are shown for manufacturing a first stacked structure 250b and a second stacked structure 250a included in a display device 1.

[0180] The first mask 410 includes an opening region 411 corresponding to the entire display area DA.

[0181] The second mask 420 includes patterned holes 421 formed in the region corresponding to the transmission region TA. Therefore, the second stacked structure 250a is formed only in the transmission region TA. However, one or more embodiments are not limited to this. The patterned holes 421 in the second mask 420 can be modified in various ways.

[0182] Figure 10A and Figure 10B This is a cross-sectional view showing a method for manufacturing a display device 1 in a processing sequence according to an embodiment.

[0183] Reference Figure 10A It can be done by using Figure 9 A first mask 410 is used to obtain a second cover region 251b and a first auxiliary cover layer 251c. The first auxiliary cover layer 251c may have a thickness equal to that of the second cover region 251b.

[0184] Reference Figure 10B It can be done by using Figure 9 A second mask 420 is used to obtain a second auxiliary capping layer 251d. The first capping region 251a may include a first auxiliary capping layer 251c and a second auxiliary capping layer 251d. Because the patterned holes 421 in the second mask 420 are arranged to correspond to the second auxiliary capping layer 251d, the second auxiliary capping layer 251d can be formed only in the transmission region TA. Therefore, the first capping region 251a and the second capping region 251b can be formed with different thicknesses, the first capping region 251a having a thickness t1 and the second capping region 251b having a thickness t2.

[0185] In the same manner as above, a light extraction layer 253 with regions of different thicknesses and a first inorganic encapsulation layer 310 with regions of different thicknesses can be obtained by using a second mask 420.

[0186] The following section will describe in detail the changes in infrared transmittance based on simulation results.

[0187] Figure 11A A cross-sectional view of a conventional display device is shown, in which the stacking structure in the transmissive region TA is the same as the stacking structure in the display region DA and the stacking structure in the auxiliary pixel regions.

[0188] In conventional display devices, the capping layer 251 has a refractive index of 1.79 and a thickness of 83 nm. Furthermore, the light extraction layer 253 has a refractive index of 1.29 and a thickness of 20 nm. The light extraction layer 253 may include LiF. The first inorganic encapsulation layer 310 has a thickness of 1025 nm and a refractive index of 1.75.

[0189] [Example 1]

[0190] Figure 11B This is a graph showing the infrared transmittance measured when the thickness t1 of the first cover region 251a is changed to one of 83nm, 90nm, 100nm and 110nm and the thickness t3 of the first light extraction region 253a is changed.

[0191] When the thickness t1 of the first cover region 251a and the thickness t3 of the first light extraction region 253a are changed, when the thickness t1 of the first cover region 251a is 100 nm and the thickness t3 of the first light extraction region 253a is 160 nm, the infrared transmittance is increased by up to 12.21% compared with the conventional display device disclosed above.

[0192] [Example 2]

[0193] Figure 11C This is a graph showing the infrared transmittance based on the thickness t3 of the first light extraction region 253a when the thickness t1 of the first cover region 251a is 83 nm and the refractive index of the cover layer 251 is 1.79.

[0194] When the thickness t3 of the first light extraction region 253a is 200 nm, the infrared transmittance is increased by up to 11.68% compared with the conventional display devices disclosed above.

[0195] [Example 3]

[0196] Figure 11D The graph shows the visible light transmittance and infrared transmittance measured when the refractive index of the cover layer 251 is changed to 1.79, 1.84, 1.9, 2.0 and 2.1, with the refractive index of the light extraction layer 253 being 1.29 and the thickness t3 of the first light extraction region 253a being 20 nm.

[0197] When the refractive index of the capping layer 251 is increased from 1.79 to 2.1, the infrared transmittance of the transmission region TA increases by up to 7.57%, while the visible light transmittance of the display region DA remains constant at about 16%.

[0198] According to the embodiment of the display device, the pixel portion and the transmissive region having improved light transmittance are arranged in the sensor region corresponding to the component such as the sensor, so that the image can be realized in the region superimposed with the component, while providing an environment in which the component can be operated.

[0199] Therefore, display devices with various functions and improved quality can be provided.

[0200] It should be understood that the embodiments described herein are to be considered in a descriptive sense only and not for limiting purposes. The description of features or aspects within each embodiment should generally be considered applicable to other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to figures, those skilled in the art will understand that various changes in form and detail may be made therein without departing from the spirit and scope defined by the claims.

Claims

1. A display device, the display device comprising a display area and a sensor area, the display area comprising main pixels, and the sensor area comprising auxiliary pixels and a transmissive area. in, The display device includes: Base; Multiple display elements are included in each of the main pixels and each of the auxiliary pixels; A first stacked structure is stacked with the plurality of display elements; A second stacked structure is superimposed on the transmissive region; and A thin-film encapsulation layer covers the first stacked structure and the second stacked structure. Wherein, the thickness of the first stacked structure is less than the thickness of the second stacked structure, and The first stacked structure, which is stacked with the plurality of display elements included in each of the main pixels and each of the auxiliary pixels, has the same thickness.

2. The display device according to claim 1, wherein, Each of the first stacked structure and the second stacked structure includes a capping layer and a light extraction layer disposed on the capping layer. The thin-film encapsulation layer is disposed on the light extraction layer and includes a first inorganic encapsulation layer, and The refractive index of the light extraction layer is less than that of the capping layer and the refractive index of the first inorganic encapsulation layer.

3. The display device according to claim 2, wherein, The cover layer includes: a first cover region disposed in the transmissive region; and a second cover region disposed on the plurality of display elements, and The first cover region has a greater thickness than the second cover region.

4. The display device according to claim 3, wherein, The light extraction layer includes: a first light extraction region disposed in the transmission region; and a second light extraction region disposed on the plurality of display elements, and The first light extraction region has a greater thickness than the second light extraction region.

5. The display device according to claim 2, wherein, The light extraction layer includes: a first light extraction region disposed in the transmission region; and a second light extraction region disposed on the plurality of display elements, and The first light extraction region has a greater thickness than the second light extraction region.

6. The display device according to claim 2, wherein, The difference between the refractive index of the capping layer and the refractive index of the light extraction layer is greater than or equal to 0.5, and The difference between the refractive index of the first inorganic encapsulation layer and the refractive index of the light extraction layer is greater than or equal to 0.

46.

7. The display device according to claim 2, wherein, The cover layer includes: a first cover region disposed in the transmissive region; and a second cover region disposed on the plurality of display elements. The light extraction layer includes: a first light extraction region disposed on the first cover region; and a second light extraction region disposed on the second cover region. The refractive index of the capping layer is greater than or equal to 1.79 and less than or equal to 2.

2.

8. The display device according to claim 1, wherein, The plurality of display elements include a counter electrode formed as a single sheet to cover the plurality of display elements, and the counter electrode includes an opening disposed corresponding to the transmissive region.

9. The display device according to claim 1, wherein, The plurality of display elements include counter electrodes formed as a single sheet to cover the plurality of display elements, and The counter electrode includes: a first region corresponding to the plurality of display elements; and a second region corresponding to the transmissive region, the second region having a thickness smaller than that of the first region.

10. The display device according to claim 1, further comprising: An infrared sensor is located on the lower surface of the substrate, and the infrared sensor is disposed corresponding to the sensor area.

Images