Magnetic storage devices

Abstract

A magnetic memory device includes: a conductive line extending in a first direction; a magnetic line extending in a second direction intersecting the first direction on the conductive line, the magnetic line intersecting the conductive line; and a magnetic pattern arranged between the conductive line and the magnetic line. The magnetic pattern has first side walls opposite to each other in the first direction and second side walls opposite to each other in the second direction. The second side walls of the magnetic pattern are respectively aligned with the opposite side walls of the conductive line.

Description

Technical Field

[0001] Embodiments of the inventive concept relate to a magnetic memory device, and more particularly, to a magnetic memory device using a movement phenomenon of a magnetic domain wall and a method of manufacturing the same. Background Art

[0002] High-speed and low-voltage memory devices can be used to meet the demand for high-speed and low-power electronic devices including memory devices. Magnetic memory devices have been studied as memory devices that meet such demand. Magnetic memory devices have become candidates for next-generation memory devices due to their high-speed operation characteristics and / or non-volatile characteristics. In particular, magnetic memory devices that utilize the movement phenomenon of magnetic domain walls of magnetic materials have been studied and developed. Summary of the invention

[0003] Embodiments of the inventive concept may provide a magnetic memory device capable of improving integration density and a method of manufacturing the same.

[0004] Embodiments of the inventive concept may also provide a magnetic memory device suitable for mass production and a method of manufacturing the same.

[0005] In some embodiments, a magnetic memory device may include: a conductive line extending in a first direction; a magnetic line extending in a second direction intersecting the first direction on the conductive line, the magnetic line intersecting the conductive line; and a magnetic pattern between the conductive line and the magnetic line. The magnetic pattern may have first side walls opposite to each other in the first direction and second side walls opposite to each other in the second direction. The second side walls of the magnetic pattern may be aligned with the opposite side walls of the conductive line, respectively.

[0006] In some embodiments, a magnetic memory device may include: a first conductive line extending in a first direction; a first magnetic line extending in a second direction intersecting the first direction on the first conductive line, the first magnetic line intersecting the first conductive line; a first magnetic pattern between the first conductive line and the first magnetic line; a second conductive line extending in a second direction parallel to the first magnetic line on the first magnetic line; a second magnetic line extending in the first direction on the second conductive line and intersecting the second conductive line; and a second magnetic pattern between the second conductive line and the second magnetic line. The second conductive line may be spaced vertically from the first magnetic line, and the first conductive line and the second conductive line may be non-magnetic.

[0007] In some embodiments, a magnetic memory device may include: conductive lines extending in a first direction and spaced apart from each other in a second direction intersecting the first direction; magnetic lines extending in a second direction on the conductive lines and spaced apart from each other in the first direction, the magnetic lines intersecting the conductive lines; magnetic patterns respectively arranged at intersections of the conductive lines and the magnetic lines; and tunnel barrier lines arranged between the conductive lines and the magnetic lines, extending in the second direction, and spaced apart from each other in the first direction. Each of the tunnel barrier lines may be arranged between a corresponding one of the magnetic lines and a corresponding one of the magnetic patterns. Each of the magnetic patterns may have first side walls opposite to each other in the first direction and second side walls opposite to each other in the second direction. The second side walls of each of the magnetic patterns may be respectively aligned with the opposite side walls of the corresponding one of the conductive lines.

[0008] In some embodiments, a method for manufacturing a magnetic memory device may include: forming a conductive line and an initial magnetic pattern sequentially stacked on a substrate and extending in a first direction; forming a first interlayer insulating layer on the conductive line and the initial magnetic pattern; forming a tunnel barrier layer and a magnetic layer sequentially stacked on the first interlayer insulating layer; forming a mask pattern extending in a second direction intersecting the first direction on the magnetic layer; and performing an etching process of etching the magnetic layer, the tunnel barrier layer, the first interlayer insulating layer, and the initial magnetic pattern by using the mask pattern as an etching mask. The conductive line may be used as an etching stop layer in the etching process. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] The inventive concept will become more apparent in view of the accompanying drawings and accompanying detailed description.

[0010] Figure 1 is a perspective view schematically illustrating a magnetic memory device according to some embodiments of the inventive concept.

[0011] Figure 2A , Figure 2B , Figure 2C and Figure 2D Along Figure 1 Cross-sectional views taken along lines A-A', B-B', CC' and D-D'.

[0012] Figure 2E and Figure 2F yes Figure 2A An enlarged view of the portion “PP”.

[0013] Figure 3 , Figure 5 , Figure 7 and Fig. 9 is a perspective view illustrating a method for manufacturing a magnetic memory device according to some embodiments of the inventive concept.

[0014] Figure 4A , Fig. 6A , Fig. 8A and Fig. 10A Along Figure 3 , Figure 5 , Figure 7 and Fig. 9 A cross-sectional view taken along line AA'.

[0015] Figure 4B , Figure 6B , Figure 8B and Fig. 10B Along Figure 3 , Figure 5 , Figure 7 and Fig. 9 A cross-sectional view taken along line BB'.

[0016] Figure 4C , Figure 6C , Figure 8C and Fig. 10C Along Figure 3 , Figure 5 , Figure 7 and Fig. 9 A cross-sectional view taken along line CC'.

[0017] Figure 4D , Fig.6D , Fig.8D and Fig. 10D Along Figure 3 , Figure 5 , Figure 7 and Fig. 9 A cross-sectional view taken along line D-D'.

[0018] Fig.11 is a perspective view schematically illustrating a magnetic memory device according to some embodiments of the inventive concept.

[0019] Fig. 12A , Fig. 12B , Fig. 12C and Fig.12D Along Fig.11 Cross-sectional views taken along lines A-A', B-B', CC' and D-D'.

[0020] Fig.13 , Fig.15 , Fig.17 and Fig.19 is a perspective view illustrating a method for manufacturing a magnetic memory device according to some embodiments of the inventive concept.

[0021] Fig.14A , Fig.16A , Fig.18A and Fig. 20A Along Fig.13 , Fig.15 , Fig.17 and Fig.19 A cross-sectional view taken along line AA'.

[0022] Fig. 14B , Fig. 16B , Fig.18B and Fig. 20B Along Fig.13 , Fig.15 , Fig.17 and Fig.19 A cross-sectional view taken along line BB'.

[0023] Fig. 14C , Fig. 16C , Fig.18C and Fig. 20C Along Fig.13 , Fig.15 , Fig.17 and Fig.19 A cross-sectional view taken along line CC'.

[0024] Fig.14D , Fig.16D , Fig.18D and Fig.20D Along Fig.13 , Fig.15 , Fig.17 and Fig.19 A cross-sectional view taken along line D-D'. DETAILED DESCRIPTION

[0025] Hereinafter, embodiments of the inventive concept will be described in detail with reference to the accompanying drawings.

[0026] Figure 1 is a perspective view schematically illustrating a magnetic memory device according to some embodiments of the inventive concept. Figure 2A , Figure 2B , Figure 2C and Figure 2D Along Figure 1 Cross-sectional views taken along lines A-A', B-B', CC' and D-D'. Figure 2E and Figure 2F yes Figure 2A An enlarged view of the portion “PP”.

[0027] Reference Figure 1 as well as FIG. 2A to FIG. 2D, a plurality of conductive lines 110 may be disposed on the substrate 100. The conductive lines 110 may extend in a first direction D1 and may be spaced apart from each other in a second direction D2 intersecting the first direction D1. The direction in which an element extends may refer to the longitudinal direction of the extension of the element. The terms first, second, etc. are used herein to distinguish one element or direction from another element or direction, but not for the purpose of limitation, and without departing from the scope of the inventive concept, the first element discussed herein may be referred to as the second element. The first direction D1 and the second direction D2 may be parallel to the top surface 100U of the substrate 100. The substrate 100 may include a semiconductor substrate. For example, the substrate 100 may include a semiconductor substrate including silicon, silicon on insulator (SOI), silicon germanium (SiGe), germanium (Ge), or gallium arsenic (GaAs). The conductive line 110 may be non-magnetic and may include a non-magnetic metal. The conductive line 110 may include a metal (e.g., copper, tungsten, or aluminum) and / or a metal nitride (e.g., tantalum nitride, titanium nitride, or tungsten nitride).

[0028] A plurality of magnetic wires 150 may be disposed on the conductive wires 110 and may cross the conductive wires 110. The magnetic wires 150 may extend in the second direction D2 and may be spaced apart from each other in the first direction D1. The magnetic wires 150 may be spaced apart vertically from the conductive wires 110 in a third direction D3 perpendicular to the top surface 100U of the substrate 100.

[0029] Each magnetic wire 150 may include a plurality of magnetic domains D and a plurality of magnetic domain walls DW. In each magnetic wire 150, the magnetic domains D and the magnetic domain walls DW may be arranged alternately and repeatedly in the second direction D2. Each magnetic domain D may be a region in which the magnetization direction is uniform in the magnet. Each magnetic domain wall DW may be a region in which the magnetization direction between the magnetic domains D in the magnet changes. Here, the magnet may be each magnetic wire 150. Each magnetic domain wall DW may define a boundary between magnetic domains D having different magnetization directions. The size and magnetization direction of the magnetic domain D may be appropriately controlled by the shape and / or size of the magnet and external energy. The magnetic domain wall DW may be moved by a magnetic field or current applied to the magnet. The magnetic wire 150 may include at least one of cobalt (Co), iron (Fe), and nickel (Ni).

[0030] A plurality of magnetic patterns 120 may be disposed between the conductive wires 110 and the magnetic wires 150, and may be located at intersections or at each intersection of the conductive wires 110 and the magnetic wires 150, respectively. The magnetic patterns 120 may be arranged two-dimensionally in the first direction D1 and the second direction D2. Each magnetic pattern 120 may be electrically connected to a corresponding one of the conductive wires 110. The magnetic pattern 120 may include at least one of cobalt (Co), iron (Fe), and nickel (Ni).

[0031] A plurality of tunnel barrier lines 140 may be disposed between the conductive wires 110 and the magnetic wires 150 and may cross the conductive wires 110. The tunnel barrier lines 140 may extend in the second direction D2 and may be spaced apart from each other in the first direction D1. Each tunnel barrier line 140 may be disposed between a corresponding one of the magnetic wires 150 and a corresponding magnetic pattern 120 of the magnetic patterns 120. The corresponding magnetic patterns 120 may be spaced apart from each other in the second direction D2 and may be connected to the conductive wires 110. The tunnel barrier line 140 may include at least one of a magnesium oxide (MgO) layer, a titanium oxide (TiO) layer, an aluminum oxide (AlO) layer, a magnesium zinc oxide (MgZnO) layer, and a magnesium boron oxide (MgBO) layer.

[0032] Each magnetic pattern 120 may have first sidewalls 120S1 opposite to each other in the first direction D1 and second sidewalls 120S2 opposite to each other in the second direction D2. The second sidewalls 120S2 of each magnetic pattern 120 may be aligned (i.e., coplanar) with two sidewalls (e.g., sidewalls opposite to each other) 110S of a corresponding conductive line 110, respectively. The first sidewalls 120S1 of each magnetic pattern 120 may be aligned with the opposite sidewalls 140S of a corresponding tunnel barrier line 140, respectively, and may be aligned with the opposite sidewalls 150S of a corresponding magnetic line 150, respectively. The sidewalls 140S of the tunnel barrier line 140 may be aligned with the sidewalls 150S of the corresponding magnetic line 150, respectively.

[0033] The first interlayer insulating layer 130 may be disposed on the substrate 100 to cover the conductive wires 110 and the magnetic patterns 120. The first interlayer insulating layer 130 may include a first portion 130P1 disposed between the conductive wires 110, and a second portion 130P2 protruding from the first portion 130P1 in the third direction D3 and disposed between the magnetic patterns 120 in the second direction D2. The first portion 130P1 of the first interlayer insulating layer 130 may cover the sidewall 110S of the conductive wire 110. The top surface of the first portion 130P1 of the first interlayer insulating layer 130 may be substantially coplanar with the top surface of the conductive wire 110. For example, the top surface of the first portion 130P1 of the first interlayer insulating layer 130 may be located at substantially the same height as the top surface of the conductive wire 110 (relative to the top surface 100U of the substrate 100). The second portion 130P2 of the first interlayer insulating layer 130 may be disposed between the magnetic patterns 120 arranged in the second direction D2. The second portion 130P2 of the first interlayer insulating layer 130 may cover the second sidewall 120S2 of the magnetic pattern 120 , and may expose the first sidewall 120S1 of the magnetic pattern 120 .

[0034] Each tunnel barrier line 140 may be disposed between a corresponding one of the magnetic lines 150 and a corresponding magnetic pattern 120 arranged in the second direction D2, and may extend between each of the magnetic lines 150 and the second portion 130P2 of the first interlayer insulating layer 130. The first sidewall 120S1 of each magnetic pattern 120 and the top surface of the conductive line 110 may not be covered by the first interlayer insulating layer 130 but may be exposed. For example, the first interlayer insulating layer 130 may include at least one of silicon oxide, silicon nitride, and silicon oxynitride.

[0035] The second interlayer insulating layer 160 may be disposed on the first interlayer insulating layer 130 and may cover the first sidewall 120S1 of each magnetic pattern 120 and the top surface of the conductive line 110. The second interlayer insulating layer 160 may extend between the tunnel barrier lines 140 and between the magnetic wires 150. The second interlayer insulating layer 160 may cover the sidewalls 140S of the tunnel barrier lines 140 and the sidewalls 150S of the magnetic wires 150. For example, the second interlayer insulating layer 160 may include at least one of silicon oxide, silicon nitride, and silicon oxynitride.

[0036] Reference Figure 2E and Figure 2F , each magnetic pattern 120 may be a pinned layer having a magnetization direction 120MD fixed in one direction, and each magnetic wire 150 may be a free layer having a changeable magnetization direction 150MD. Each magnetic domain D may have a magnetization direction 150MD that may be changed to be parallel (i.e., in the same magnetization direction) or antiparallel (i.e., in the opposite magnetization direction) to the magnetization direction 120MD of the corresponding magnetic pattern 120.

[0037] Reference Figure 2E In some embodiments, the magnetization direction 120MD of each magnetic pattern 120 and the magnetization direction 150MD of each magnetic domain D may be perpendicular to the interface between each magnetic pattern 120 and the tunnel barrier line 140 corresponding thereto. In this case, the magnetic pattern 120 and the magnetic line 150 may include at least one of the following: a perpendicular magnetic material (e.g., CoFeTb, CoFeGd, or CoFeDy), a L1 0 A vertical magnetic material with a hexagonal close-packed (HCP) lattice structure, a CoPt alloy, and a vertical magnetic structure. 0 The vertical magnetic material of the structure may include L1 0 FePt with L1 0 FePd with L1 0 The CoPd structure and the L1 0The vertical magnetic structure may include at least one of (Co / Pt)n, (CoFe / Pt)n, (CoFe / Pd)n, (Co / Pd)n, (Co / Ni)n, (CoNi / Pt)n, (CoCr / Pt)n, and (CoCr / Pd)n, where "n" represents the number of double layers.

[0038] Reference Figure 2F In some embodiments, the magnetization direction 120MD of each magnetic pattern 120 and the magnetization direction 150MD of each magnetic domain D may be parallel to the interface between each magnetic pattern 120 and the tunnel barrier line 140 corresponding thereto. In this case, the magnetic pattern 120 and the magnetic line 150 may include a ferromagnetic material, and the magnetic pattern 120 may further include an antiferromagnetic material for fixing the magnetization direction of the ferromagnetic material.

[0039] In the following, reference will be made to Figure 2A and Figure 2E The read and write operations of the magnetic memory device according to some embodiments of the present inventive concept are described. For ease of explanation, the case where the magnetization directions 120MD and 150MD are perpendicular to the interface between each magnetic pattern 120 and the corresponding tunnel barrier line 140 (eg, Figure 2E 120MD and 150MD are parallel to the interface between each magnetic pattern 120 and the tunnel barrier line 140 corresponding thereto (such as Figure 2F shown).

[0040] Reference Figure 2A and Figure 2E , a current I for moving the magnetic domain wall DW may flow through one of the magnetic wires 150. The moving direction of the magnetic domain wall DW may be determined by the direction of the current I. The magnetic domain wall DW may move in the moving direction of the electrons E, and thus the magnetic domain wall DW may move in a direction opposite to the direction of the current I. For example, the current I may flow in the second direction D2, and the magnetic domain wall DW may move in a direction opposite to the second direction D2. Through the movement of the magnetic domain wall DW, a corresponding one of the magnetic domains D may be aligned on a corresponding one of the magnetic patterns 120. The corresponding magnetic domain D and the corresponding magnetic pattern 120 may constitute a magnetic tunnel junction MTJ.

[0041] In the read operation, the read current I read can flow through the magnetic tunnel junction MTJ. For example, the read current I readThe current I may flow from the corresponding magnetic pattern 120 to the corresponding magnetic domain D along the third direction D3. The resistance state of the magnetic tunnel junction MTJ can be read by the reading current I read Whether the magnetic tunnel junction MTJ is in a high resistance state or a low resistance state can be detected by reading the current I read For example, when the magnetization direction 150MD of the corresponding magnetic domain D is parallel to the magnetization direction 120MD of the corresponding magnetic pattern 120, the magnetic tunnel junction MTJ may be in a low resistance state. For another example, when the magnetization direction 150MD of the corresponding magnetic domain D is antiparallel to the magnetization direction 120MD of the corresponding magnetic pattern 120, the magnetic tunnel junction MTJ may be in a high resistance state. The data (0 or 1) stored in the corresponding magnetic domain D can be detected from the resistance state of the magnetic tunnel junction MTJ.

[0042] In the write operation, the write current I sw or I swr can flow through the magnetic tunnel junction MTJ. For example, the write current I sw The write current I may flow from the corresponding magnetic pattern 120 to the corresponding magnetic domain D along the third direction D3. swr The write current I may flow from the corresponding magnetic domain D to the corresponding magnetic pattern 120 in a direction opposite to the third direction D3. sw or I swr The magnitude can be larger than the read current I read The magnetization direction 150MD of the corresponding magnetic domain D can be controlled by the write current I sw or I swr The generated spin transfer torque is reversed. The magnetization direction 150MD of the corresponding magnetic domain D can be reversed by the write current I sw or I swr The generated spin transfer torque is switched to be parallel or anti-parallel to the magnetization direction 120MD of the corresponding magnetic pattern 120 .

[0043] Reference Figure 1 as well as FIG. 2A to FIG. 2D , some of the magnetic patterns 120 may be used as read elements for performing a read operation, and other of the magnetic patterns 120 may be used as write elements for performing a write operation. For example, each magnetic line 150 may be commonly connected to the magnetic patterns 120 arranged in the second direction D2. In this case, some of the magnetic patterns 120 arranged in the second direction D2 may be used as read elements, and other of the magnetic patterns 120 arranged in the second direction D2 may be used as write elements.

[0044] Figure 3 , Figure 5 , Figure 7 and Fig. 9is a perspective view illustrating a method for manufacturing a magnetic memory device according to some embodiments of the inventive concept. Figure 4A , Fig. 6A , Fig. 8A and Fig. 10A Along Figure 3 , Figure 5 , Figure 7 and Fig. 9 A cross-sectional view taken along line A-A', Figure 4B , Figure 6B , Figure 8B and Fig. 10B Along Figure 3 , Figure 5 , Figure 7 and Fig. 9 A cross-sectional view taken along line BB'. Figure 4C , Figure 6C , Figure 8C and Fig. 10C Along Figure 3 , Figure 5 , Figure 7 and Fig. 9 A cross-sectional view taken along line C-C', Figure 4D , Fig.6D , Fig.8D and Fig. 10D Along Figure 3 , Figure 5 , Figure 7 and Fig. 9 In the following, for the convenience of explanation, the cross-sectional view taken along the line D-D' of FIG. Figure 1 and FIG. 2A to FIG. 2F Description of the same features mentioned.

[0045] Reference Figure 3 as well as FIG. 4A to FIG. 4D, a conductive line 110 and a preliminary magnetic pattern 120P may be formed on a substrate 100. The conductive line 110 may extend in a first direction D1 and may be spaced apart from each other in a second direction D2. The preliminary magnetic patterns 120P may be formed on the conductive line 110, respectively. The preliminary magnetic patterns 120P may extend in the first direction D1 and may be spaced apart from each other in the second direction D2. The formation of the conductive line 110 and the preliminary magnetic pattern 120P may include: sequentially forming a conductive layer and a first magnetic layer on the substrate 100; forming a first mask pattern M1 on the first magnetic layer; and sequentially etching the first magnetic layer and the conductive layer by using the first mask pattern M1 as an etching mask. The conductive layer and the first magnetic layer may be formed using a chemical vapor deposition (CVD) method or a physical vapor deposition (PVD) method (e.g., a sputtering deposition method). The first mask pattern M1 may have a linear shape or a linear shape extending in the first direction D1, and may be spaced apart from each other in the second direction D2. The first mask pattern M1 may include a material having an etch selectivity with respect to the first magnetic layer and the conductive layer. For example, the first mask pattern M1 may include silicon oxide, silicon nitride, and / or silicon oxynitride.

[0046] The first magnetic layer and the conductive layer may be sequentially etched through a first etching process using the first mask pattern M1 as an etching mask, thereby forming a preliminary magnetic pattern 120P and the conductive wire 110. Since the preliminary magnetic pattern 120P is formed using the same mask pattern (i.e., the first mask pattern M1) as the conductive wire 110, a sidewall 120PS of the preliminary magnetic pattern 120P may be aligned with a sidewall 110S of the conductive wire 110.

[0047] Reference Figure 5 and FIG. 6A to FIG. 6D , a first interlayer insulating layer 130 may be formed on the substrate 100 to cover the preliminary magnetic pattern 120P and the conductive line 110. For example, the formation of the first interlayer insulating layer 130 may include: forming a first insulating layer on the substrate 100, the first insulating layer covering the first mask pattern M1, the preliminary magnetic pattern 120P, and the conductive line 110; and planarizing the first insulating layer until the top surface of the preliminary magnetic pattern 120P is exposed. The first mask pattern M1 may be removed during the planarization of the first insulating layer.

[0048] Reference Figure 7 as well as FIG. 8A to FIG. 8D, a tunnel barrier layer 140L and a second magnetic layer 150L may be sequentially formed on the first interlayer insulating layer 130. The tunnel barrier layer 140L may cover the exposed top surface of the initial magnetic pattern 120P and the top surface of the first interlayer insulating layer 130. The tunnel barrier layer 140L may be disposed between the second magnetic layer 150L and the initial magnetic pattern 120P and between the second magnetic layer 150L and the first interlayer insulating layer 130. The tunnel barrier layer 140L and the second magnetic layer 150L may be formed using a CVD method or a PVD method (e.g., a sputtering deposition method). The second magnetic layer 150L may include a plurality of magnetic domains and a plurality of magnetic domain walls.

[0049] The second mask pattern M2 may be formed on the second magnetic layer 150L. The second mask pattern M2 may have a linear shape or a line shape extending in the second direction D2, and may be spaced apart from each other in the first direction D1. The second mask pattern M2 may include a material having an etching selectivity with respect to the tunnel barrier layer 140L and the second magnetic layer 150L. For example, the second mask pattern M2 may include silicon oxide, silicon nitride, and / or silicon oxynitride.

[0050] Reference Fig. 9 as well as FIG. 10A to FIG. 10D , the second magnetic layer 150L, ​​the tunnel barrier layer 140L, the initial magnetic pattern 120P, and the first interlayer insulating layer 130 may be etched by a second etching process using the second mask pattern M2 as an etching mask. The second magnetic layer 150L and the tunnel barrier layer 140L may be sequentially etched by the second etching process, so that the magnetic wire 150 and the tunnel barrier line 140 may be formed. The magnetic wire 150 may extend in the second direction D2 to cross the conductive wire 110, and may be spaced apart from each other in the first direction D1. The tunnel barrier line 140 may extend in the second direction D2 between the magnetic wire 150 and the magnetic pattern 120 to cross the conductive wire 110, and may be spaced apart from each other in the first direction D1. Since the tunnel barrier line 140 is formed using the same mask pattern as the magnetic wire 150 (i.e., the second mask pattern M2), the sidewall 140S of the tunnel barrier line 140 may be aligned with the sidewall 150S of the magnetic wire 150.

[0051] The portions of the initial magnetic pattern 120P disposed on both sides (e.g., opposite sides) of each magnetic line 150 may be etched by a second etching process. The second etching process may be performed until the top surface of the conductive line 110 on the opposite side of each magnetic line 150 is exposed. The conductive line 110 may be used as an etching stop layer in the second etching process. Since the initial magnetic pattern 120P is patterned by the second etching process, the magnetic pattern 120 may be formed under each magnetic line 150. The magnetic patterns 120 may be spaced apart from each other in the second direction D2 under each magnetic line 150. For ease of description, spatial relative terms such as "below", "below", "below", "below", "above", "on", etc. may be used herein to describe the relationship between one element and another (multiple) element as shown in the figure, but may be understood to include different orientations other than the orientations drawn in the figure. Each tunnel barrier line 140 may be disposed between a corresponding one of the magnetic lines 150 and a corresponding magnetic pattern 120 in the magnetic pattern 120. The magnetic pattern 120 may be locally formed at a crossing point or at each crossing of each magnetic wire 150 and the conductive wire 110 .

[0052] Each magnetic pattern 120 may have first sidewalls 120S1 opposite to each other in the first direction D1 and second sidewalls 120S2 opposite to each other in the second direction D2. Since the initial magnetic pattern 120P is formed using the same mask pattern (i.e., the first mask pattern M1) as the conductive wire 110, the second sidewalls 120S2 of each magnetic pattern 120 may be aligned with the opposite sidewalls 110S of the corresponding one conductive wire 110, respectively. In addition, since the magnetic pattern 120 is formed using the same mask pattern (i.e., the second mask pattern M2) as the magnetic wire 150 and the tunnel barrier wire 140, the first sidewalls 120S1 of each magnetic pattern 120 may be aligned with the opposite sidewalls 140S of the corresponding one tunnel barrier wire 140, respectively, and may be aligned with the opposite sidewalls 150S of the corresponding one magnetic wire 150, respectively.

[0053] The portion of the first interlayer insulating layer 130 disposed on the opposite side of each magnetic line 150 may be etched by the second etching process. Since the first interlayer insulating layer 130 is patterned by the second etching process, the first interlayer insulating layer 130 may include a first portion 130P1 disposed between the conductive lines 110 and a second portion 130P2 disposed between the magnetic patterns 120. The first portion 130P1 of the first interlayer insulating layer 130 may cover the sidewall 110S of the conductive line 110 and may expose the top surface of the conductive line 110. The second portion 130P2 of the first interlayer insulating layer 130 may cover the second sidewall 120S2 of the magnetic pattern 120 and may expose the first sidewall 120S1 of the magnetic pattern 120.

[0054] Reference Figure 1 as well as FIG. 2A to FIG. 2D , the second interlayer insulating layer 160 may be formed on the first interlayer insulating layer 130 and may cover the first sidewall 120S1 of each magnetic pattern 120 and the top surface of the conductive line 110. The second interlayer insulating layer 160 may be formed to cover the sidewall 140S of the tunnel barrier line 140 and the sidewall 150S of the magnetic line 150. For example, the formation of the second interlayer insulating layer 160 may include: forming a second insulating layer on the first interlayer insulating layer 130, the second insulating layer covering the conductive line 110, the magnetic pattern 120, the tunnel barrier line 140, the magnetic line 150, and the second mask pattern M2; and planarizing the second insulating layer until the top surface of the magnetic line 150 is exposed. The second mask pattern M2 may be removed during the planarization of the second insulating layer.

[0055] According to an embodiment of the inventive concept, the preliminary magnetic pattern 120P may be formed using the first mask pattern M1 as an etching mask, and the magnetic pattern 120 may be formed using the second mask pattern M2 as an etching mask. Thus, the magnetic pattern 120 may be self-aligned with the intersections or intersections of the magnetic wires 150 and the conductive wires 110.

[0056] In addition, the preliminary magnetic pattern 120P may be formed using the same mask pattern (i.e., the first mask pattern M1) as the conductive line 110, and the magnetic pattern 120 may be formed using the same mask pattern (i.e., the second mask pattern M2) as the magnetic line 150 and the tunnel barrier line 140. In other words, an additional mask pattern for forming the magnetic pattern 120 may not be required.

[0057] As a result, the process for manufacturing the magnetic memory device can be simplified, and thus high integration density and mass production of the magnetic memory device can be more easily achieved.

[0058] Fig.11 is a perspective view schematically illustrating a magnetic memory device according to some embodiments of the inventive concept. Fig. 12A , Fig. 12B , Fig. 12C and Fig.12D Along Fig.11 Hereinafter, for the convenience of explanation, the present embodiment will be mainly described with reference to FIG. Figure 1 and FIG. 2A to FIG. 2F The difference between the implementation methods.

[0059] Reference Fig.11 and FIG. 12A to FIG. 12D, a plurality of first conductive lines 110 may be disposed on the substrate 100. A plurality of first magnetic lines 150 may be disposed on the first conductive lines 110 and may intersect the first conductive lines 110. The first magnetic lines 150 may be spaced apart vertically from the first conductive lines 110 in the third direction D3. A plurality of first magnetic patterns 120 may be disposed between the first conductive lines 110 and the first magnetic lines 150 and may be located at intersections or at respective intersections of the first conductive lines 110 and the first magnetic lines 150, respectively. A plurality of first tunnel barrier lines 140 may be disposed between the first conductive lines 110 and the first magnetic lines 150 and may intersect the first conductive lines 110. Each first tunnel barrier line 140 may be disposed between a corresponding one of the first magnetic lines 150 and a corresponding first magnetic pattern 120 in the first magnetic patterns 120. The corresponding first magnetic patterns 120 may be spaced apart from each other in the second direction D2 and may be connected to the first conductive lines 110, respectively.

[0060] Each of the first magnetic patterns 120 may have first sidewalls 120S1 opposite to each other in the first direction D1 and second sidewalls 120S2 opposite to each other in the second direction D2. The second sidewalls 120S2 of each of the first magnetic patterns 120 may be respectively aligned with the opposite sidewalls 110S of a corresponding one of the first conductive lines 110. The first sidewalls 120S1 of each of the first magnetic patterns 120 may be respectively aligned with the opposite sidewalls 140S of a corresponding one of the first tunnel barrier lines 140, and may be respectively aligned with the opposite sidewalls 150S of a corresponding one of the first magnetic lines 150.

[0061] The first conductive line 110, the first magnetic pattern 120, the first tunnel barrier line 140, and the first magnetic line 150 may be connected to the reference Figure 1 and FIG. 2A to FIG. 2F The conductive lines 110 , magnetic patterns 120 , tunnel barrier lines 140 , and magnetic lines 150 described are substantially the same.

[0062] The first interlayer insulating layer 130 may be disposed on the substrate 100 to cover the first conductive wires 110 and the first magnetic patterns 120. The first interlayer insulating layer 130 may include a first portion 130P1 disposed between the first conductive wires 110 and a second portion 130P2 disposed between the first magnetic patterns 120. The second portion 130P2 of the first interlayer insulating layer 130 may be disposed between the first magnetic patterns 120 arranged in the second direction D2. The first portion 130P1 of the first interlayer insulating layer 130 may cover the sidewalls 110S of the first conductive wires 110 and may expose the top surfaces of the first conductive wires 110. The second portion 130P2 of the first interlayer insulating layer 130 may cover the second sidewalls 120S2 of the first magnetic patterns 120 and may expose the first sidewalls 120S1 of the first magnetic patterns 120.

[0063] A plurality of separation insulating lines 200 may be respectively disposed on the first magnetic line 150. The separation insulating lines 200 may extend in the second direction D2 and may be spaced apart from each other in the first direction D1. The first magnetic line 150 may be disposed between the first tunnel barrier line 140 and the separation insulating line 200. Sidewalls 150S of the first magnetic line 150 may be aligned with sidewalls 200S of the separation insulating line 200, respectively. The separation insulating line 200 may include at least one of silicon oxide, silicon nitride, and silicon oxynitride.

[0064] A plurality of second conductive lines 210 may be respectively disposed on the separated insulating lines 200. The second conductive lines 210 may extend in the second direction D2 and may be spaced apart from each other in the first direction D1. The separated insulating lines 200 may be disposed between the first magnetic line 150 and the second conductive line 210. The second conductive line 210 may extend parallel to the first magnetic line 150. The sidewalls 200S of the separated insulating lines 200 may be aligned with the sidewalls 210S of the second conductive lines 210, respectively. The second conductive line 210 may be electrically insulated from the first magnetic line 150 by the separated insulating lines 200. The second conductive line 210 may be non-magnetic and may include a non-magnetic metal. The second conductive line 210 may include a metal (e.g., copper, tungsten, or aluminum) and / or a metal nitride (e.g., tantalum nitride, titanium nitride, or tungsten nitride). In some embodiments, the second conductive line 210 may include the same material as the first conductive line 110.

[0065] A plurality of second magnetic wires 250 may be disposed on the second conductive wire 210 and may cross the second conductive wire 210. The second magnetic wires 250 may extend in the first direction D1 and may be spaced apart from each other in the second direction D2. The second magnetic wires 250 may be spaced apart vertically from the second conductive wire 210 in the third direction D3.

[0066] Each second magnetic wire 250 may include a plurality of magnetic domains D and a plurality of magnetic domain walls DW. In each second magnetic wire 250, the magnetic domains D and the magnetic domain walls DW may be alternately and repeatedly arranged in the first direction D1. The second magnetic wire 250 may include at least one of cobalt (Co), iron (Fe), and nickel (Ni). In some embodiments, the second magnetic wire 250 may include the same material as the first magnetic wire 150.

[0067] A plurality of second magnetic patterns 220 may be disposed between the second conductive wire 210 and the second magnetic wire 250, and may be located at the intersection or each intersection of the second conductive wire 210 and the second magnetic wire 250, respectively. The second magnetic patterns 220 may be arranged two-dimensionally in the first direction D1 and the second direction D2. Each second magnetic pattern 220 may be electrically connected to a corresponding one of the second conductive wires 210. The second magnetic pattern 220 may include at least one of cobalt (Co), iron (Fe), and nickel (Ni). In some embodiments, the second magnetic pattern 220 may include the same material as the first magnetic pattern 120.

[0068] A plurality of second tunnel barrier lines 240 may be disposed between the second conductive line 210 and the second magnetic line 250, and may intersect the second conductive line 210. The second tunnel barrier lines 240 may extend in the first direction D1 and may be spaced apart from each other in the second direction D2. Each second tunnel barrier line 240 may be disposed between a corresponding one of the second magnetic lines 250 and a corresponding second magnetic pattern 220 in the second magnetic pattern 220. The corresponding second magnetic patterns 220 may be spaced apart from each other in the first direction D1 and may be connected to the second conductive line 210, respectively. The second tunnel barrier line 240 may include at least one of a magnesium oxide (MgO) layer, a titanium oxide (TiO) layer, an aluminum oxide (AlO) layer, a magnesium zinc oxide (MgZnO) layer, and a magnesium boron oxide (MgBO) layer. In some embodiments, the second tunnel barrier line 240 may include the same material as the first tunnel barrier line 140.

[0069] Each second magnetic pattern 220 may have third sidewalls 220S3 opposite to each other in the first direction D1 and fourth sidewalls 220S4 opposite to each other in the second direction D2. The third sidewalls 220S3 of each second magnetic pattern 220 may be aligned with the opposite sidewalls 210S of a corresponding one of the second conductive lines 210, respectively. The fourth sidewalls 220S4 of each second magnetic pattern 220 may be aligned with the opposite sidewalls 240S of a corresponding one of the second tunnel barrier lines 240, respectively, and may be aligned with the opposite sidewalls 250S of a corresponding one of the second magnetic lines 250, respectively. The sidewalls 240S of the second tunnel barrier lines 240 may be aligned with the sidewalls 250S of the second magnetic lines 250.

[0070] The second interlayer insulating layer 160 may be disposed on the first interlayer insulating layer 130, and may cover the first sidewalls 120S1 of the first magnetic pattern 120 and the top surfaces of the first conductive lines 110. The second interlayer insulating layer 160 may extend between the first tunnel barrier lines 140, between the first magnetic lines 150, between the separation insulating lines 200, and between the second conductive lines 210. The second interlayer insulating layer 160 may cover the sidewalls 140S of the first tunnel barrier lines 140, the sidewalls 150S of the first magnetic lines 150, the sidewalls 200S of the separation insulating lines 200, and the sidewalls 210S of the second conductive lines 210.

[0071] The second interlayer insulating layer 160 may include a third portion 160P3 disposed between the second conductive lines 210, and a fourth portion 160P4 protruding from the third portion 160P3 in the third direction D3 and disposed between the second magnetic patterns 220. The third portion 160P3 of the second interlayer insulating layer 160 may extend between the separation insulating lines 200, between the first magnetic lines 150, and between the first tunnel barrier lines 140, and may cover the first sidewall 120S1 of the first magnetic pattern 120 and the top surface of the first conductive line 110. The third portion 160P3 of the second interlayer insulating layer 160 may expose the top surface of the second conductive line 210. The top surface of the third portion 160P3 of the second interlayer insulating layer 160 may be substantially coplanar with the top surface of the second conductive line 210. For example, the top surface of the third portion 160P3 of the second interlayer insulating layer 160 may be located at substantially the same height (relative to the substrate 100) as the top surface of the second conductive line 210.

[0072] The fourth portion 160P4 of the second interlayer insulating layer 160 may be disposed between the second magnetic patterns 220 arranged in the first direction D1. The fourth portion 160P4 of the second interlayer insulating layer 160 may cover the third sidewall 220S3 of the second magnetic pattern 220 and may expose the fourth sidewall 220S4 of the second magnetic pattern 220. For example, the second interlayer insulating layer 160 may include at least one of silicon oxide, silicon nitride, and silicon oxynitride.

[0073] The third interlayer insulating layer 170 may be disposed on the second interlayer insulating layer 160 and may cover the fourth sidewall 220S4 of the second magnetic pattern 220 and the top surface of the second conductive line 210. The third interlayer insulating layer 170 may extend between the second tunnel barrier lines 240 and between the second magnetic wires 250. The third interlayer insulating layer 170 may cover the sidewall 240S of the second tunnel barrier line 240 and the sidewall 250S of the second magnetic wire 250. For example, the third interlayer insulating layer 170 may include at least one of silicon oxide, silicon nitride, and silicon oxynitride.

[0074] The first conductive line 110, the first magnetic pattern 120, the first tunnel barrier line 140 and the first magnetic line 150 may constitute a first unit stack, and the second conductive line 210, the second magnetic pattern 220, the second tunnel barrier line 240 and the second magnetic line 250 may constitute a second unit stack. The magnetic memory device according to the present embodiment may include a first unit stack and a second unit stack sequentially stacked on the substrate 100. However, the embodiments of the inventive concept are not limited thereto. The magnetic memory device may further include one or more additional unit stacks stacked on the second unit stack. In addition to the second conductive line 210, the second tunnel barrier line 240 and the second magnetic line 250 extending in a direction different from the first conductive line 110, the first tunnel barrier line 140 and the first magnetic line 150, other features and components of the second unit stack may be substantially the same as the corresponding features and components of the first unit stack. The second unit stack may be operated (e.g., read / write operation) by a method substantially the same as the first unit stack.

[0075] Fig.13 , Fig.15 , Fig.17 and Fig.19 is a perspective view illustrating a method for manufacturing a magnetic memory device according to some embodiments of the inventive concept. Fig.14A , Fig.16A , Fig.18A and Fig. 20A Along Fig.13 , Fig.15 , Fig.17 and Fig.19 A cross-sectional view taken along line A-A', Fig. 14B , Fig. 16B , Fig.18B and Fig. 20B Along Fig.13 , Fig.15 , Fig.17 and Fig.19 A cross-sectional view taken along line BB'. Fig. 14C , Fig. 16C , Fig.18C and Fig. 20C Along Fig.13 , Fig.15 , Fig.17 and Fig.19 A cross-sectional view taken along line C-C', Fig.14D , Fig.16D , Fig.18D and Fig.20D Along Fig.13 , Fig.15 , Fig.17 and Fig.19 In the following, for the convenience of explanation, the cross-sectional view taken along the line D-D' of FIG. Figures 3 to 10D The same features as mentioned in the description.

[0076] Reference Fig.13 and FIG. 14A to FIG. 14D , the first conductive line 110 and the first preliminary magnetic pattern 120P may be formed on the substrate 100. The first conductive line 110 and the first preliminary magnetic pattern 120P may be formed by comparing with the reference Figure 3 and FIG. 4A to FIG. 4D The conductive line 110 and the initial magnetic pattern 120P are formed by substantially the same method as described above. For example, the formation of the first conductive line 110 and the first initial magnetic pattern 120P may include: sequentially forming a first conductive layer and a first magnetic layer on the substrate 100; forming a first mask pattern on the first magnetic layer; and performing a first etching process of sequentially etching the first magnetic layer and the first conductive layer by using the first mask pattern as an etching mask. Since the first initial magnetic pattern 120P is formed using the same mask pattern (i.e., the first mask pattern M1) as the first conductive line 110, the sidewall 120PS of the first initial magnetic pattern 120P may be aligned with the sidewall 110S of the first conductive line 110.

[0077] The first interlayer insulating layer 130 may be formed on the substrate 100 to cover the first preliminary magnetic pattern 120P and the first conductive line 110. For example, the formation of the first interlayer insulating layer 130 may include: forming a first insulating layer on the substrate 100, the first insulating layer covering the first mask pattern, the first preliminary magnetic pattern 120P, and the first conductive line 110; and planarizing the first insulating layer until the top surface of the first preliminary magnetic pattern 120P is exposed. The first mask pattern may be removed during planarization of the first insulating layer.

[0078] The first tunnel barrier layer 140L, the second magnetic layer 150L, ​​the separation insulating layer 200L, the second conductive layer 210L, and the third magnetic layer 220L may be sequentially formed on the first interlayer insulating layer 130. The first tunnel barrier layer 140L and the second magnetic layer 150L may be formed by contacting the reference Figure 7 and FIG. 8A to FIG. 8D The tunnel barrier layer 140L and the second magnetic layer 150L are formed by substantially the same method as described above. The separation insulating layer 200L may be formed using, for example, a CVD method, and may be disposed between the second magnetic layer 150L and the second conductive layer 210L. The second conductive layer 210L and the third magnetic layer 220L may be formed using a CVD method or a PVD method (e.g., a sputtering deposition method).

[0079] The second mask pattern M2 may be formed on the third magnetic layer 220L. The second mask pattern M2 may have a linear shape or a line shape extending in the second direction D2, and may be spaced apart from each other in the first direction D1. The second mask pattern M2 may include a material having an etching selectivity with respect to the first tunnel barrier layer 140L, the second magnetic layer 150L, ​​the separation insulating layer 200L, the second conductive layer 210L, and the third magnetic layer 220L. For example, the second mask pattern M2 may include silicon oxide, silicon nitride, and / or silicon oxynitride.

[0080] Reference Fig.15 and FIG. 16A to FIG. 16D , the third magnetic layer 220L, the second conductive layer 210L, the separation insulating layer 200L, the second magnetic layer 150L, ​​and the first tunnel barrier layer 140L may be etched by a second etching process using the second mask pattern M2 as an etching mask. The third magnetic layer 220L, the second conductive layer 210L, the separation insulating layer 200L, the second magnetic layer 150L, ​​and the first tunnel barrier layer 140L may be sequentially etched by the second etching process to form a second preliminary magnetic pattern 220P, a second conductive line 210, a separation insulating line 200, a first magnetic line 150, and a first tunnel barrier line 140.

[0081] The first magnetic wire 150 may extend in the second direction D2 to intersect the first initial magnetic pattern 120P, and may be spaced apart from each other in the first direction D1. The first tunnel barrier line 140 may extend in the second direction D2 between the first magnetic wire 150 and the first initial magnetic pattern 120P to intersect the first initial magnetic pattern 120P, and may be spaced apart from each other in the first direction D1. The separation insulation lines 200 may be formed on the first magnetic wire 150, respectively. The separation insulation lines 200 may extend in the second direction D2 and may be spaced apart from each other in the first direction D1. The second conductive wires 210 may be formed on the separation insulation lines 200, respectively. The second conductive wires 210 may extend in the second direction D2 and may be spaced apart from each other in the first direction D1. The second initial magnetic patterns 220P may be formed on the second conductive wires 210, respectively. The second initial magnetic patterns 220P may extend in the second direction D2 and may be spaced apart from each other in the first direction D1. The second initial magnetic pattern 220P, the second conductive line 210, the separation insulating line 200, the first magnetic line 150 and the first tunnel barrier line 140 can be formed using the same mask pattern (i.e., the second mask pattern M2), and therefore, the sidewalls 220PS of the second initial magnetic pattern 220P, the sidewalls 210S of the second conductive line 210, the sidewalls 200S of the separation insulating line 200, the sidewalls 150S of the first magnetic line 150 and the sidewalls 140S of the first tunnel barrier line 140 can be aligned with each other.

[0082] The portion of the first preliminary magnetic pattern 120P disposed on the opposite side of each first magnetic line 150 may be etched by a second etching process. The second etching process may be performed until the top surface of the first conductive line 110 on the opposite side of each first magnetic line 150 is exposed. In the second etching process, the first conductive line 110 may be used as an etching stop layer. Since the first preliminary magnetic pattern 120P is patterned by the second etching process, the first magnetic pattern 120 may be formed under each first magnetic line 150. The first magnetic patterns 120 may be spaced apart from each other in the second direction D2 under each first magnetic line 150. Each first tunnel barrier line 140 may be disposed between a corresponding one of the first magnetic lines 150 and a corresponding first magnetic pattern 120 in the first magnetic pattern 120. The first magnetic pattern 120 may be locally formed at the intersection or at each intersection of each first magnetic line 150 and the first conductive line 110.

[0083] Each of the first magnetic patterns 120 may have first sidewalls 120S1 opposite to each other in the first direction D1 and second sidewalls 120S2 opposite to each other in the second direction D2. Since the first preliminary magnetic pattern 120P is formed using the same mask pattern (i.e., the first mask pattern M1) as the first conductive wire 110, the second sidewalls 120S2 of each of the first magnetic patterns 120 may be respectively aligned with the opposite sidewalls 110S of the corresponding one of the first conductive wires 110. In addition, since the first magnetic pattern 120 is formed using the same mask pattern (i.e., the second mask pattern M2) as the first magnetic wire 150 and the first tunnel barrier wire 140, the first sidewalls 120S1 of each of the first magnetic patterns may be respectively aligned with the opposite sidewalls 140S of the corresponding one of the first tunnel barrier wires 140, and may be respectively aligned with the opposite sidewalls 150S of the corresponding one of the first magnetic wires 150.

[0084] The portion of the first interlayer insulating layer 130 disposed on the opposite side of each first magnetic wire 150 may be etched by the second etching process. Since the first interlayer insulating layer 130 is patterned by the second etching process, the first interlayer insulating layer 130 may include a first portion 130P1 disposed between the first conductive wires 110 and a second portion 130P2 disposed between the first magnetic patterns 120. The first portion 130P1 of the first interlayer insulating layer 130 may cover the sidewall 110S of the first conductive wire 110 and may expose the top surface of the first conductive wire 110. The second portion 130P2 of the first interlayer insulating layer 130 may cover the second sidewall 120S2 of the first magnetic pattern 120 and may expose the first sidewall 120S1 of the first magnetic pattern 120.

[0085] Reference Fig.17 as well as 18A to 18D , the second interlayer insulating layer 160 may be formed on the first interlayer insulating layer 130 and may cover the first sidewall 120S1 of each first magnetic pattern 120 and the top surface of the first conductive line 110. The second interlayer insulating layer 160 may cover the sidewalls of the second preliminary magnetic pattern 220P, the sidewalls of the second conductive line 210, the sidewalls of the separation insulating line 200, the sidewalls of the first magnetic line 150, and the sidewalls of the first tunnel barrier line 140. For example, the formation of the second interlayer insulating layer 160 may include: forming a second insulating layer on the first interlayer insulating layer 130, the second insulating layer covering the first conductive line 110, the first magnetic pattern 120, the first tunnel barrier line 140, the first magnetic line 150, the separation insulating line 200, the second conductive line 210, the second preliminary magnetic pattern 220P, and the second mask pattern M2; and planarizing the second insulating layer until the top surface of the second preliminary magnetic pattern 220P is exposed. The second mask pattern M2 may be removed during the planarization of the second insulating layer.

[0086] The second tunnel barrier layer 240L and the fourth magnetic layer 250L may be sequentially formed on the second interlayer insulating layer 160. The second tunnel barrier layer 240L may cover the exposed top surface of the second preliminary magnetic pattern 220P and the top surface of the second interlayer insulating layer 160. The second tunnel barrier layer 240L may be disposed between the fourth magnetic layer 250L and the second preliminary magnetic pattern 220P and between the fourth magnetic layer 250L and the second interlayer insulating layer 160. The second tunnel barrier layer 240L and the fourth magnetic layer 250L may be formed using a CVD method or a PVD method (e.g., a sputtering deposition method). The fourth magnetic layer 250L may include a plurality of magnetic domains and a plurality of magnetic domain walls.

[0087] The third mask pattern M3 may be formed on the fourth magnetic layer 250L. The third mask pattern M3 may have a linear shape or a line shape extending in the first direction D1, and may be spaced apart from each other in the second direction D2. The third mask pattern M3 may include a material having an etching selectivity with respect to the second tunnel barrier layer 240L and the fourth magnetic layer 250L. For example, the third mask pattern M3 may include silicon oxide, silicon nitride, and / or silicon oxynitride.

[0088] Reference Fig.19 and FIG. 20A to FIG. 20D, the fourth magnetic layer 250L, the second tunnel barrier layer 240L, the second initial magnetic pattern 220P, and the second interlayer insulating layer 160 may be etched by a third etching process using the third mask pattern M3 as an etching mask. The fourth magnetic layer 250L and the second tunnel barrier layer 240L may be sequentially etched by the third etching process, and thus the second magnetic wire 250 and the second tunnel barrier wire 240 may be formed. The second magnetic wire 250 may extend in the first direction D1 to intersect the second initial magnetic pattern 220P, and may be spaced apart from each other in the second direction D2. The second tunnel barrier wire 240 may extend in the first direction D1 between the second magnetic wire 250 and the second initial magnetic pattern 220P to intersect the second initial magnetic pattern 220P, and may be spaced apart from each other in the second direction D2. Since the second tunnel barrier line 240 is formed using the same mask pattern (ie, the third mask pattern M3 ) as the second magnetic wire 250 , the sidewalls 240S of the second tunnel barrier line 240 may be aligned with the sidewalls 250S of the second magnetic wire 250 .

[0089] The portion of the second initial magnetic pattern 220P disposed on the opposite side of each second magnetic line 250 may be etched by a third etching process. The third etching process may be performed until the top surface of the second conductive line 210 on the opposite side of each second magnetic line 250 is exposed. In the third etching process, the second conductive line 210 may be used as an etching stop layer. Since the second initial magnetic pattern 220P is patterned by the third etching process, the second magnetic pattern 220 may be formed under each second magnetic line 250. The second magnetic patterns 220 may be spaced apart from each other in the first direction D1 under each second magnetic line 250. Each second tunnel barrier line 240 may be disposed between a corresponding one of the second magnetic lines 250 and a corresponding second magnetic pattern 220 in the second magnetic pattern 220. The second magnetic pattern 220 may be locally formed at the intersection or each intersection of each second magnetic line 250 and the second conductive line 210.

[0090] Each of the second magnetic patterns 220 may have third sidewalls 220S3 opposite to each other in the first direction D1 and fourth sidewalls 220S4 opposite to each other in the second direction D2. Since the second preliminary magnetic pattern 220P is formed using the same mask pattern (i.e., the second mask pattern M2) as the second conductive wire 210, the third sidewalls 220S3 of each of the second magnetic patterns 220 may be respectively aligned with the opposite sidewalls 210S of a corresponding one of the second conductive wires 210. In addition, since the second magnetic pattern 220 is formed using the same mask pattern (i.e., the third mask pattern M3) as the second magnetic wire 250 and the second tunnel barrier wire 240, the fourth sidewalls 220S4 of each of the second magnetic patterns 220 may be respectively aligned with the opposite sidewalls 240S of a corresponding one of the second tunnel barrier wires 240, and may be respectively aligned with the opposite sidewalls 250S of a corresponding one of the second magnetic wires 250.

[0091] The portion of the second interlayer insulating layer 160 disposed on the opposite side of each second magnetic wire 250 may be etched by the third etching process. Since the second interlayer insulating layer 160 is patterned by the third etching process, the second interlayer insulating layer 160 may include a third portion 160P3 disposed between the second conductive wires 210 and a fourth portion 160P4 disposed between the second magnetic patterns 220. The third portion 160P3 of the second interlayer insulating layer 160 may cover the sidewall 210S of the second conductive wire 210 and may expose the top surface of the second conductive wire 210. The fourth portion 160P4 of the second interlayer insulating layer 160 may cover the third sidewall 220S3 of the second magnetic pattern 220 and may expose the fourth sidewall 220S4 of the second magnetic pattern 220.

[0092] Refer again Fig.11 and FIG. 12A to FIG. 12D , the third interlayer insulating layer 170 may be formed on the second interlayer insulating layer 160 and may cover the fourth sidewall 220S4 of each second magnetic pattern 220 and the top surface of the second conductive line 210. The third interlayer insulating layer 170 may be formed to cover the sidewall 240S of the second tunnel barrier line 240 and the sidewall 250S of the second magnetic line 250. For example, the formation of the third interlayer insulating layer 170 may include: forming a third insulating layer on the second interlayer insulating layer 160, the third insulating layer covering the second conductive line 210, the second magnetic pattern 220, the second tunnel barrier line 240, the second magnetic line 250, and the third mask pattern M3; and planarizing the third insulating layer until the top surface of the second magnetic line 250 is exposed. The third mask pattern M3 may be removed during the planarization of the third insulating layer.

[0093] According to an embodiment of the inventive concept, the first magnetic pattern 120 may be self-aligned at the intersection or each intersection of the first magnetic wire 150 and the first conductive wire 110, and the second magnetic pattern 220 may be self-aligned at the intersection or each intersection of the second magnetic wire 250 and the second conductive wire 210. In addition, no additional mask pattern for forming the first magnetic pattern 120 and the second magnetic pattern 220 may be required. As a result, the process for manufacturing a highly integrated magnetic memory device may be simplified, and thus mass production of the highly integrated magnetic memory device may be easy.

[0094] According to embodiments of the inventive concept, a process for manufacturing a magnetic memory device may be simplified, and thus higher integration density and mass production of the magnetic memory device may be more easily achieved.

[0095] Although the inventive concept has been described with reference to example embodiments, it will be apparent to those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the inventive concept. Therefore, it should be understood that the above embodiments are not restrictive but illustrative. Therefore, the scope of the inventive concept will be determined by the broadest permissible interpretation of the appended claims and their equivalents, and should not be constrained or limited by the foregoing description.

[0096] This application claims the priority of Korean Patent Application No. 10-2019-0121627 filed on October 1, 2019, in the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference.

Claims

1. A magnetic storage device, comprising: a conductive line extending in a first direction; a magnetic line extending on the conductive line in a second direction intersecting the first direction, the magnetic line intersecting the conductive line; a magnetic pattern between the conductive wire and the magnetic wire; as well as a first interlayer insulating layer on the conductive line and the magnetic pattern, wherein the first interlayer insulating layer covers the side surfaces of the conductive wire and the side surfaces of the magnetic pattern, and the magnetic wire extends over the top surface of the first interlayer insulating layer, wherein the magnetic pattern includes first side walls opposite to each other in the first direction and second side walls opposite to each other in the second direction, and The second side walls of the magnetic pattern are respectively aligned with the side walls of the conductive line that are opposite to each other.

2. The magnetic memory device according to claim 1, wherein: The magnetic pattern is at the intersection of the conductive wire and the magnetic wire.

3. The magnetic memory device according to claim 2, wherein: The magnetic wire comprises: a plurality of magnetic domains and a plurality of magnetic domain walls arranged alternately in the second direction, and The magnetic pattern is electrically connected to the conductive line and has a magnetization direction fixed in one direction.

4. The magnetic memory device according to claim 2, further comprising: a tunnel barrier line between the magnetic line and the magnetic pattern and extending in the second direction to cross the conductive line, The first side walls of the magnetic pattern are respectively aligned with opposite side walls of the tunnel barrier line.

5. The magnetic memory device according to claim 4, wherein: The mutually opposite side walls of the tunnel barrier line are aligned with mutually opposite side walls of the magnetic line, respectively.

6. The magnetic memory device according to claim 1, wherein: The conductive wire is non-magnetic.

7. The magnetic memory device according to claim 1, in, The first interlayer insulating layer comprises: a first portion on the opposite side walls of the conductive line; and a second portion protruding from the first portion and extending on the second sidewall of the magnetic pattern, wherein the top surface of the first portion is coplanar with the top surface of the conductive line, and The second portion exposes the first side wall of the magnetic pattern.

8. The magnetic memory device according to claim 7, further comprising: a second interlayer insulating layer on the first interlayer insulating layer, The second interlayer insulating layer extends on the top surface of the conductive line and the first side wall of the magnetic pattern, and extends on the side wall of the magnetic line.

9. The magnetic memory device according to claim 7, further comprising: a tunnel barrier line between the magnetic line and the magnetic pattern, The tunnel barrier line extends between the second portion of the first interlayer insulating layer and the magnetic line.

10. A magnetic storage device comprising: a first conductive line extending in a first direction; a first magnetic line extending on the first conductive line in a second direction intersecting the first direction, the first magnetic line intersecting the first conductive line; a first magnetic pattern between the first conductive wire and the first magnetic wire; a second conductive wire extending along the second direction on the first magnetic wire; a second magnetic wire extending in the first direction on the second conductive wire and crossing the second conductive wire; and a second magnetic pattern between the second conductive wire and the second magnetic wire, wherein the second conductive wire is vertically spaced apart from the first magnetic wire, and Wherein, the first conductive wire and the second conductive wire are non-magnetic.

11. The magnetic memory device according to claim 10, wherein: The first magnetic pattern is at the intersection of the first conductive line and the first magnetic line and is electrically connected to the first conductive line, and The second magnetic pattern is at the intersection of the second conductive line and the second magnetic line, and is electrically connected to the second conductive line.

12. The magnetic memory device according to claim 10, further comprising: a first tunnel barrier line between the first magnetic line and the first magnetic pattern and extending in the second direction to cross the first conductive line; as well as A second tunnel barrier line is between the second magnetic line and the second magnetic pattern and extends in the first direction to cross the second conductive line.

13. The magnetic memory device according to claim 10, wherein: The first magnetic wire includes a plurality of first magnetic domains and a plurality of first magnetic domain walls arranged alternately in the second direction, and The second magnetic line includes a plurality of second magnetic domains and a plurality of second magnetic domain walls alternately arranged in the first direction.

14. The magnetic memory device according to claim 13, wherein: Each of the first magnetic pattern and the second magnetic pattern has a respective magnetization direction fixed in a respective direction.

15. The magnetic memory device according to claim 10, further comprising: A separate insulating line extends between the first magnetic line and the second conductive line in the second direction.

16. A magnetic storage device comprising: conductive lines extending in a first direction and spaced apart from each other in a second direction intersecting the first direction; magnetic wires extending in the second direction on the conductive wires and spaced apart from each other in the first direction, the magnetic wires crossing the conductive wires; magnetic patterns, respectively at the intersections of the conductive wires and the magnetic wires; Tunnel barrier lines extending between the conductive line and the magnetic line in the second direction and spaced apart from each other in the first direction; as well as a first interlayer insulating layer on the conductive line and the magnetic pattern, wherein the first interlayer insulating layer covers the side surfaces of the conductive wire and the side surfaces of the magnetic pattern, and the magnetic wire extends over the top surface of the first interlayer insulating layer, wherein each of the tunnel barrier lines is between a corresponding one of the magnetic lines and a corresponding one of the magnetic patterns, wherein each of the magnetic patterns includes first side walls opposite to each other in the first direction and second side walls opposite to each other in the second direction, and The second sidewall of each of the magnetic patterns is respectively aligned with the opposite sidewalls of a corresponding one of the conductive lines.

17. The magnetic memory device according to claim 16, wherein: Each of the magnetic wires includes a plurality of magnetic domains and a plurality of magnetic domain walls alternately arranged in the second direction.

18. The magnetic memory device according to claim 17, wherein: Each of the magnetic patterns has a respective magnetization direction fixed in a respective direction, and Each of the plurality of magnetic domains has a respective magnetization direction, and the respective magnetization direction can be changed to be parallel or anti-parallel to the respective magnetization direction of a corresponding one of the magnetic patterns.

19. The magnetic memory device according to claim 16, wherein: The first sidewalls of each of the magnetic patterns are respectively aligned with mutually opposite sidewalls of a corresponding one of the tunnel barrier lines.

20. The magnetic memory device according to claim 19, wherein The mutually opposite side walls of the corresponding one of the tunnel barrier lines are respectively aligned with mutually opposite side walls of the corresponding one of the magnetic wires.

Images