Intelligent high voltage relay

By integrating electronic solid-state switches, gate driver circuits, protection circuits and sensors in intelligent relay components, the cost and complexity problems caused by functional dispersion in the prior art are solved, and the minimization of functions and efficient control of functions are achieved.

CN112688675BActive Publication Date: 2025-01-03GM GLOBAL TECHNOLOGY OPERATIONS LLC
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Patent Information

Application Number
CN202011110485.1
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2019-10-17
Filing Date
2020-10-16
Publication Date
2025-01-03
Estimated Expiration
2040-10-16

AI Technical Summary

Technical Problem

Existing solid-state switch modules increase cost, complexity, and space occupancy when fully replacing contactors, and lack effective functional integration solutions.

Method used

Design an integrated smart relay assembly that includes electronic solid state switches, gate driver circuits, protection circuits, sensors and communication interfaces within the housing, drives the switches at predetermined voltages and currents through the gate driver circuits, and is equipped with protection circuits and sensors to Monitor current, voltage and temperature to achieve minimal function integration.

Benefits of technology

Functional integration with minimized cost and complexity is achieved, reducing the volume and inductance of the relay assembly, improving the diagnostic and control capabilities of the switch, and ensuring protection of overvoltage, short circuit and overheating.

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Abstract

An integrated intelligent relay assembly includes a housing and an electronic solid-state switch disposed in the housing and a gate driver circuit electrically connected to the electronic solid-state switch. The gate driver circuit is configured to drive the electronic solid-state switch with a predetermined gate voltage and a predetermined gate current. The relay assembly also includes a protection circuit electrically connected to the gate driver circuit. The protection circuit is configured to protect the electronic solid-state switch from overvoltage, short circuit and overheating. The relay assembly also includes a communication interface integrated with the electronic solid-state switch. Each of the protection circuit, the electronic solid-state switch and the communication interface is disposed in the housing.
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Description

Technical Field

[0001] The present disclosure relates to an intelligent high-voltage solid-state relay in a relay assembly. Background Art

[0002] If a solid-state switch module is used to completely replace a contactor, it is expected that the switch module includes driver circuitry, protection circuitry, sensing circuitry, communication circuitry, fault logic, and power supplies. The external assembly functions that support the switch module are very specialized and add cost, complexity, and space. Summary of the invention

[0003] Therefore, it is desirable to develop a relay assembly including a driver circuit, a protection circuit, a sensing circuit, a communication circuit and a power supply in an integrated manner so as to minimize the cost and complexity of controlling different relay functions and the occupied volume by cost-effectively integrating these functions. In one aspect of the present disclosure, the relay assembly includes a housing and an electronic solid-state switch disposed inside the housing and a gate driver circuit electrically connected to the electronic solid-state switch. The gate driver circuit is configured to drive the electronic solid-state switch with a predetermined gate voltage and a predetermined gate current. The relay assembly also includes a protection circuit electrically connected to the gate driver circuit. The protection circuit is configured to protect the electronic solid-state switch from overvoltage, short circuit, overcurrent and overheating. The relay assembly also includes a communication interface (e.g., a controller area network (CAN) bus interface) integrated with the electronic solid-state switch. Each of the protection circuit, the electronic solid-state switch and the communication interface (e.g., a CAN bus interface) is disposed in the housing.

[0004] The relay assembly may also include a plurality of sensors electrically coupled to the electronic solid-state switch. The sensors may be configured to measure current, voltage, and temperature in the relay assembly. The sensors may include current sensors, voltage sensors, and temperature sensors. The relay assembly may also include fault logic and feedback for switch diagnostics integrated within the smart relay assembly.

[0005] Each of the gate driver circuit, protection circuit, sensor, and CAN can be completely disposed within the housing. The gate driver circuit can be disposed outside the housing, but in close proximity to the switch terminals to have a direct press-fit configuration of the gate leads to the switch module, thereby ensuring minimum inductance in the circuit. The gate driver circuit can include multiple leads. The housing can have multiple holes. Each hole is sized to receive a corresponding lead in a press-fit configuration.

[0006] The protection circuit may include a buffer circuit electrically connected to the electronic solid-state switch. The buffer circuit may be completely disposed within the housing. The buffer circuit includes an RC circuit and a transient voltage suppressor electrically connected in parallel with the RC circuit. Alternatively, the buffer circuit may include an RC circuit. The RC circuit may include a resistor and a capacitor electrically connected in series with the resistor.

[0007] The relay assembly may include an interposer, which may be a high temperature ceramic or silicon. A gate driver circuit may be disposed on the interposer, thereby connecting to a gate pad of a semiconductor device through vias or contact pins. The package in the relay assembly may fully encapsulate an electronic solid-state switch. The interposer may support the gate driver circuit.

[0008] The relay assembly may include a directly bonded substrate. The electronic solid-state switch die may be disposed directly on the directly bonded substrate. A gate driver chip in the form of a bare die may be disposed directly on the directly bonded substrate, close to the switch die, to minimize parasitic inductance. The relay assembly may also include a power supply disposed entirely within the housing. The power supply may be electrically connected to the electronic solid-state switch and will help the solid-state switch relay to be self-powered.

[0009] The present invention also includes the following technical solutions:

[0010] Technical Solution 1. An integrated intelligent relay assembly, comprising:

[0011] case;

[0012] an electronic solid-state switch disposed inside the housing;

[0013] a gate driver circuit electrically connected to the electronic solid-state switch, wherein the gate driver circuit is configured to drive the electronic solid-state switch at a predetermined gate voltage and a predetermined gate current;

[0014] a protection circuit electrically connected to the gate driver circuit, wherein the protection circuit is configured to protect the electronic solid-state switch from overvoltage, short circuit, and thermal runaway;

[0015] a communications interface integrated with said electronic solid-state switch; and

[0016] Wherein, each of the protection circuit, the electronic solid-state switch and the communication interface is disposed within the housing.

[0017] Technical Solution 2. The relay assembly according to Technical Solution 1 further includes a plurality of sensors electrically coupled to the electronic solid-state switch, wherein the plurality of sensors are configured to measure current, voltage and temperature in the relay assembly.

[0018] Technical Solution 3. A relay assembly according to Technical Solution 2, wherein the multiple sensors include a current sensor configured to measure the current in the relay assembly, a voltage sensor configured to measure the voltage in the relay assembly, and a temperature sensor configured to measure the temperature in the relay assembly.

[0019] Technical Solution 4. A relay assembly according to Technical Solution 2, wherein each of the gate driver circuit, the protection circuit, the multiple sensors and the communication interface is completely disposed within the housing.

[0020] Technical Solution 5. A relay assembly according to Technical Solution 1, wherein the gate driver circuit is partially disposed outside the housing, the gate driver circuit includes a plurality of leads, the housing has a plurality of holes, each of the plurality of holes is sized to receive a corresponding one of the plurality of leads in a press-fit configuration.

[0021] Technical Solution 6. A relay assembly according to Technical Solution 1, wherein the protection circuit includes a buffer circuit electrically connected to the electronic solid-state switch, the buffer circuit is completely disposed within the housing, and the buffer circuit includes an RC circuit and a transient voltage suppressor electrically connected in parallel with the RC circuit.

[0022] Technical Solution 7. A relay assembly according to Technical Solution 1, wherein the protection circuit includes a buffer circuit electrically connected to the electronic solid-state switch, the buffer circuit is completely arranged within the housing, the buffer circuit includes an RC circuit, and the RC circuit includes a resistor and a capacitor electrically connected in series with the resistor.

[0023] Technical Solution 8. The relay assembly according to Technical Solution 1 also includes an inserter supporting the gate driver circuit.

[0024] Technical Solution 9. The relay assembly according to Technical Solution 1 further includes a directly bonded substrate, the electronic solid-state switch is directly disposed on the directly bonded substrate, and the gate driver circuit is configured as a chip in the form of a tube die and is directly disposed on the directly bonded substrate.

[0025] Technical Solution 10. The relay assembly according to Technical Solution 1 further includes a local power supply completely disposed within the housing, and the local power supply is electrically connected to the electronic solid-state switch, so that the relay assembly is self-powered.

[0026] Technical Solution 11. An integrated intelligent relay assembly, comprising:

[0027] case;

[0028] an electronic solid-state switch disposed inside the housing;

[0029] a gate driver circuit electrically connected to the electronic solid-state switch, wherein the gate driver circuit is configured to drive the electronic solid-state switch at a predetermined gate voltage and a predetermined gate current;

[0030] a protection circuit electrically connected to the gate driver circuit, wherein the protection circuit is configured to protect the electronic solid-state switch from overvoltage, short circuit, and overheating;

[0031] a communications interface integrated with said electronic solid-state switch;

[0032] a plurality of sensors electrically coupled to the electronic solid-state switch, wherein the plurality of sensors includes a current sensor configured to measure a current in the relay assembly, the plurality of sensors includes a voltage sensor configured to measure a voltage in the relay assembly, and the plurality of sensors includes a temperature sensor configured to measure a temperature in the relay assembly; and

[0033] Wherein, each of the protection circuit, the electronic solid-state switch and the communication interface is disposed within the housing.

[0034] Technical Solution 12. A relay assembly according to Technical Solution 11, wherein each of the gate driver circuit, the protection circuit, the multiple sensors and the communication interface is completely disposed within the housing.

[0035] Technical Solution 13. A relay assembly according to Technical Solution 11, wherein the gate driver circuit is partially disposed outside the housing.

[0036] Technical Solution 14. A relay assembly according to Technical Solution 13, wherein the gate driver circuit includes a plurality of leads, the housing has a plurality of holes, and each of the plurality of holes is sized to receive a corresponding one of the plurality of leads in a press-fit configuration.

[0037] Technical Solution 15. A relay assembly according to Technical Solution 11, wherein the protection circuit includes a buffer circuit configured to be electrically connected to the electronic solid-state switch, and the buffer circuit is completely disposed within the housing, and the buffer circuit includes an RC circuit and a transient voltage suppressor electrically connected in parallel with the RC circuit.

[0038] Technical Solution 16. A relay assembly according to Technical Solution 11, wherein the protection circuit includes a buffer circuit electrically connected to the solid-state switch, and the buffer circuit is completely disposed within the housing, the buffer circuit includes an RC circuit, and the RC circuit includes a resistor and a capacitor electrically connected in series with the resistor.

[0039] Technical Solution 17. The relay assembly according to Technical Solution 11 further includes an inserter and a package disposed inside the inserter, and the gate driver circuit is disposed on the inserter.

[0040] Technical Solution 18. A relay assembly according to Technical Solution 17, wherein the package completely encapsulates the electronic solid-state switch and the inserter supports the gate driver circuit.

[0041] Technical Solution 19. The relay assembly according to Technical Solution 11 further includes a directly bonded substrate, the electronic solid-state switch is directly disposed on the directly bonded substrate, and the gate driver circuit is configured as a chip and is directly disposed on the directly bonded substrate.

[0042] Technical Solution 20. The relay assembly according to Technical Solution 11 also includes a power supply completely disposed within the housing, and the power supply is electrically connected to the electronic solid-state switch.

[0043] The above features and advantages and other features and advantages of the present teachings are readily apparent from the following detailed description of some best modes and other embodiments for carrying out the present teachings when taken in connection with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] Figure 1 is a schematic diagram of a relay assembly including an electronic solid-state switch, a gate driver circuit, a protection circuit, a sensing circuit, and fault logic, wherein a communication interface is electrically connected to the electronic solid-state switch.

[0045] Figure 2A yes Figure 1 Schematic perspective view of a relay assembly.

[0046] Figure 2B yes Figure 1 Electrical diagram of a portion of a relay assembly.

[0047] Figure 2C yes Figure 1 An electrical diagram of a snubber circuit of a relay assembly, wherein the snubber circuit includes a transient voltage suppressor (TVS).

[0048] Figure 2D yes Figure 1An electrical diagram of a snubber relay assembly, wherein the snubber circuit includes an RC circuit.

[0049] Figure 3 yes Figure 1 A schematic exploded view of a relay, wherein a protection circuit is arranged in the housing.

[0050] Figure 4 yes Figure 1 Schematic perspective view of a relay assembly with the gate driver circuit mounted outside the housing using very short lead connections or solderless press-fit connections.

[0051] Figure 5 yes Figure 4 A schematic partial cross-sectional view of a relay assembly shown in FIG.

[0052] Figure 6 is a schematic front view of a relay assembly including an interposer for supporting a switch die and a gate driver attached within a housing.

[0053] Figure 7 A relay component includes a gate driver chip on a direct bond substrate, such as a direct bond copper (DBC) substrate or a direct bond aluminum (DBA) substrate.

[0054] Figure 8 is a schematic diagram of a relay assembly including a power device. DETAILED DESCRIPTION

[0055] The following detailed description is merely exemplary in nature and is not intended to limit the application and use. In addition, it is not intended to be bound by any explicit or implicit theory presented in the previous background technology, the invention summary or the following detailed description.

[0056] Embodiments of the present disclosure may be described herein in terms of functional and / or logical block components and various processing steps. It should be understood that such block components may be implemented by multiple hardware, software, and / or firmware components configured to perform specified functions. For example, embodiments of the present disclosure may employ various integrated circuit components, such as memory elements, digital signal processing elements, logic elements, lookup tables, etc., which may perform various functions under the control of one or more microprocessors or other control devices. In addition, those skilled in the art will appreciate that embodiments of the present disclosure may be practiced in conjunction with multiple systems, and the systems described herein are merely exemplary embodiments of the present disclosure.

[0057] For the sake of brevity, technologies related to signal processing, data fusion, signal transmission, control, and other functional aspects of the system (and the various operating components of the system) may not be described in detail herein. In addition, the connecting lines shown in the various figures included herein are intended to represent example functional relationships and / or physical couplings between the various elements. It should be noted that alternative or additional functional relationships or physical connections may exist in the embodiments of the present disclosure.

[0058] Reference Figure 1-2D , the intelligent relay assembly 100 includes an electronic solid-state switch 102 and a gate driver circuit 104. The relay assembly 100 can be a semiconductor field effect transistor (MOSFET). The MOSFET can include silicon carbide or other suitable semiconductor materials, such as silicon, gallium nitride, and gallium oxide. The gate driver circuit 104 is a power amplifier that accepts a lower power input PI (e.g., 5 volts and / or 12 volts) and generates a high current drive input for the gate of the electronic solid-state switch 102. Therefore, the gate driver circuit 104 is electrically connected to the electronic solid-state switch 102. The gate driver circuit is configured to drive the electronic solid-state switch 102 with an appropriate gate voltage and current.

[0059] The relay assembly 100 may also include a plurality of sensors 110 electrically connected to the electronic solid-state switch 102 to provide a gate signal to switch the MOSFET to on or off. The sensor 110 is used for diagnosis and is configured to measure, for example, the current, voltage and / or temperature of the relay assembly 100. For example, the relay assembly 100 may include a current sensor 112 configured to measure the current (i.e., amperage) in the electronic solid-state switch 102. In addition to the current sensor 112, the relay assembly 100 may include a voltage sensor 116 configured to measure the voltage of the power supply terminal of the electronic solid-state switch 102. In addition, the relay assembly 100 includes one or more temperature sensors 148 to measure the temperature of the electronic solid-state switch 102. The current sensor 112 may be electrically connected to the load L.

[0060] The relay assembly 100 also includes one or more dedicated protection circuits 106 configured to protect the electronic solid-state switch 102 from overvoltage, short circuit, and / or overheating. The protection circuit 106 may include a buffer circuit 108 electrically connected to the electronic solid-state switch 102 to allow the rated current from the voltage supply 202 (which has a predetermined inductance) to be switched in less than 0.5 milliseconds (e.g., less than 0.2 milliseconds) while minimizing transient voltages across the electronic solid-state switch 102. The buffer circuit 108 is configured to absorb energy and prevent oscillations of voltage and current due to parasitic capacitance. Figure 2B As shown in , the snubber circuit 108 can be electrically connected in parallel with the electronic solid-state switch 102. Figure 2CAs shown in FIG. 1 , the snubber circuit may have one or more transient voltage suppressors (TVS) 109, such as a Zener diode, electrically connected in parallel with a predetermined threshold damping resistor-capacitor circuit (RC circuit) 111. The RC circuit 111 includes a resistor 115 electrically connected in series with a capacitor 117. Alternatively, as shown in FIG. Figure 2D As shown in , the snubber circuit 108 may include only the RC circuit 11 electrically connected between the power terminals of the electronic solid-state switch 102 .

[0061] The relay assembly 100 also includes a module 118, which includes a current sensing amplifier 120, a fault logic circuit 114, and a voltage sensor 116. The voltage sensor 116 is configured to measure the voltage across the power supply terminals of the electronic solid-state switch 102. The fault logic circuit 114 is configured to output a fault signal FS (indicating a fault condition in the electronic solid-state switch 102). In addition, the fault logic circuit 114 is configured to output a relay state signal RSS (which indicates the state of the electronic solid-state switch 102). The module 118 is electrically connected to the electronic solid-state switch 102 through the gate driver circuit 104.

[0062] The module 118 also includes a communication interface 124, such as a controller area network (CAN) bus interface, electrically connected to the electronic solid-state switch 102. Figure 2A As shown in , the relay assembly 100 includes a positive terminal 126 (DC+) and a negative terminal 128 (DC-) electrically connected to the electronic solid-state switch 102 and protruding directly from the housing 122. The terminal 130 of the gate driver circuit 104 extends directly from the housing 122. As shown in FIG. Figure 3 As shown in , the protection circuit 106 and the gate driver circuit 104 can be completely disposed inside the housing 122 for protection and to minimize the size of the relay assembly 100. The electronic solid-state switch 102, the sensor 110, the module 118, the protection circuit 106, and the gate driver circuit 104 can be completely disposed inside the housing 122 to minimize the space occupied by the relay assembly 100.

[0063] Reference Figure 4 and Figure 5 , the gate driver circuit 104 is disposed outside the housing 122. The gate driver circuit 104 includes a plurality of leads 105 that are press-fit into the housing 122. The housing 122 may have holes 107 that are each sized to receive one of the corresponding leads 105 in a press-fit configuration. The leads 105 may be very short to achieve a press-fit connection between the housing 122 and the gate driver circuit 104, thereby minimizing the parasitic inductance and size of the relay assembly 100.

[0064] Reference Figure 6, the positive terminal 126 and the negative terminal 128 of the relay assembly 100 are electrically connected to the control board 132. The relay assembly 100 may also include one or more interconnects 134 that couple the control board 132 to the interposer 136. The interposer 136 supports one or more gate driver circuits 104 and one or more passive electronic components 138. The package 140 may be disposed inside the relay assembly 100. The package 140 encapsulates one or more power devices 142, such as an electronic solid-state switch 102, and one or more interconnects (e.g., a flexible metal foil 144). The metal foil 144 electrically connects the power devices 142 to each other. A heat sink may be coupled to the package 140 for thermal management.

[0065] Reference Figure 7 , the relay assembly 100 may include a direct-bonded substrate 146, such as a direct-bonded copper (DBC) substrate or a direct-bonded aluminum (DBA) substrate. One or more electronic solid-state switches 102 (e.g., MOSFETs) may be disposed directly on the direct-bonded substrate 146 to minimize the size of the relay assembly 100. One or more temperature sensors 148, such as thermistors, may be disposed directly on the direct-bonded substrate 146 to minimize the size of the relay assembly 100. The positive terminal 126 and the negative terminal 128 may be configured as metal traces disposed directly on the direct-bonded substrate 146 to minimize the size of the relay assembly 100. The gate driver circuit 104 is configured as a chip in the form of a die disposed directly on the direct-bonded substrate 146 to minimize inductance.

[0066] Reference Figure 8 , the relay assembly 100 can be self-powered. To this end, the relay assembly 100 includes a local power source 150, such as a battery, that is completely disposed within the housing 122. The power source 150 is electrically connected to the module 118 to power the relay assembly 100, thereby eliminating the need for Figure 1 The need for an external power supply signal for the gate driver.

[0067] The specific embodiments and the accompanying drawings or diagrams support and describe the present teachings, but the scope of the present teachings is limited only by the claims. Although some best modes and other embodiments for implementing the present teachings have been described in detail, there are various alternative designs and embodiments for practicing the present teachings defined in the appended claims. For example, Figure 3-Figure 7 The embodiments shown in are merely examples and are not necessarily the only way to integrate functionality and gate drivers into a single relay assembly housing.

Claims

1. An integrated smart relay assembly comprising: case; an electronic solid-state switch disposed inside the housing; a gate driver circuit electrically connected to the electronic solid-state switch, wherein the gate driver circuit is configured to drive the electronic solid-state switch at a predetermined gate voltage and a predetermined gate current; a protection circuit electrically connected to the gate driver circuit, wherein the protection circuit is configured to protect the electronic solid-state switch from overvoltage, short circuit, and thermal runaway; a communications interface integrated with said electronic solid-state switch; and wherein each of the protection circuit, the electronic solid-state switch and the communication interface is disposed within the housing; Wherein, the gate driver circuit includes a plurality of leads, the housing has a plurality of holes, each of the plurality of holes being sized to receive a corresponding one of the plurality of leads in a press-fit configuration.

2. The smart relay assembly of claim 1, further comprising a plurality of sensors electrically coupled to the electronic solid-state switch, wherein the plurality of sensors are configured to measure current, voltage, and temperature in the smart relay assembly.

3. The smart relay assembly of claim 2, wherein the plurality of sensors include a current sensor configured to measure a current in the smart relay assembly, a voltage sensor configured to measure a voltage in the smart relay assembly, and a temperature sensor configured to measure a temperature in the smart relay assembly.

4. The smart relay assembly of claim 2, wherein each of the gate driver circuit, the protection circuit, the plurality of sensors, and the communication interface are disposed entirely within the housing. 5 . The smart relay assembly of claim 1 , wherein the gate driver circuit is partially disposed outside of the housing.

6. The smart relay assembly of claim 1 , wherein the protection circuit comprises a snubber circuit electrically connected to the electronic solid-state switch, the snubber circuit being disposed entirely within the housing, and the snubber circuit comprising an RC circuit and a transient voltage suppressor electrically connected in parallel with the RC circuit.

7. The smart relay assembly of claim 1, wherein the protection circuit comprises a snubber circuit electrically connected to the electronic solid-state switch, the snubber circuit being disposed entirely within the housing, the snubber circuit comprising an RC circuit, and the RC circuit comprising a resistor and a capacitor electrically connected in series with the resistor.

8. The smart relay assembly of claim 1, further comprising an interposer supporting the gate driver circuit.

9. The smart relay assembly of claim 1 further comprising a direct-bonded substrate, the electronic solid-state switch disposed directly on the direct-bonded substrate, and the gate driver circuit configured as a chip in die form and disposed directly on the direct-bonded substrate.

10. The smart relay assembly of claim 1 further comprising a local power source disposed entirely within the housing and electrically connected to the electronic solid-state switch such that the smart relay assembly is self-powered.

11. An integrated smart relay assembly comprising: case; an electronic solid-state switch disposed inside the housing; a gate driver circuit electrically connected to the electronic solid-state switch, wherein the gate driver circuit is configured to drive the electronic solid-state switch at a predetermined gate voltage and a predetermined gate current; a protection circuit electrically connected to the gate driver circuit, wherein the protection circuit is configured to protect the electronic solid-state switch from overvoltage, short circuit, and overheating; a communications interface integrated with said electronic solid-state switch; a plurality of sensors electrically coupled to the electronic solid-state switch, wherein the plurality of sensors includes a current sensor configured to measure a current in the smart relay assembly, the plurality of sensors includes a voltage sensor configured to measure a voltage in the smart relay assembly, and the plurality of sensors includes a temperature sensor configured to measure a temperature in the smart relay assembly; as well as wherein each of the protection circuit, the electronic solid-state switch and the communication interface is disposed within the housing; Wherein, the gate driver circuit includes a plurality of leads, the housing has a plurality of holes, and each hole of the plurality of holes is sized to receive a corresponding one of the plurality of leads in a press-fit configuration.

12. The smart relay assembly of claim 11, wherein each of the gate driver circuit, the protection circuit, the plurality of sensors, and the communication interface are disposed entirely within the housing.

13. The smart relay assembly of claim 11, wherein the gate driver circuit is partially disposed outside of the housing.

14. The smart relay assembly of claim 11, wherein the protection circuit comprises a snubber circuit configured to be electrically connected to the electronic solid-state switch, and the snubber circuit is completely disposed within the housing, and the snubber circuit comprises an RC circuit and a transient voltage suppressor electrically connected in parallel with the RC circuit.

15. The smart relay assembly of claim 11, wherein the protection circuit comprises a snubber circuit electrically connected to the solid-state switch, and the snubber circuit is completely disposed within the housing, the snubber circuit comprises an RC circuit, and the RC circuit comprises a resistor and a capacitor electrically connected in series with the resistor. 16 . The smart relay assembly according to claim 11 , further comprising an interposer and a package disposed inside the interposer, wherein the gate driver circuit is disposed on the interposer.

17. The smart relay assembly of claim 16, wherein the package completely encapsulates the electronic solid-state switch and the interposer supports the gate driver circuit.

18. The smart relay assembly of claim 11, further comprising a direct-bonded substrate, the electronic solid-state switch being disposed directly on the direct-bonded substrate, and the gate driver circuit being configured as a chip and disposed directly on the direct-bonded substrate.

19. The smart relay assembly of claim 11, further comprising a power source disposed entirely within said housing and electrically connected to said electronic solid-state switch.