A dual-band high-efficiency radio frequency power amplifier

Abstract

The present invention discloses a dual-band high-efficiency radio frequency power amplifier, comprising an input dual-frequency directional coupler, a dual-channel broadband amplification network and an output dual-frequency directional coupler. The core architecture of the present invention adopts a dual-channel broadband amplification network with high power and high efficiency characteristics, and at the same time utilizes the good low insertion loss and standing wave matching characteristics of the input dual-frequency directional coupler and the output dual-frequency directional coupler in two frequency bands of the microwave frequency band. The operating frequency of the dual-frequency directional coupler is not affected by the amplifier network, and independent frequency band design can be achieved, so that the entire power amplifier obtains good high gain, high efficiency, good standing wave characteristics and high power output capability in the required dual frequency bands.

Description

Technical Field

[0001] The invention relates to the field of field effect transistor radio frequency power amplifiers and integrated circuits, and in particular to a dual-band high-efficiency radio frequency power amplifier applied to a transmitting module of a radio frequency microwave terminal transceiver. Background Art

[0002] With the rapid development of wireless communication systems and RF microwave circuits, RF front-end transceivers are also developing towards high performance, high integration and low power consumption. However, the rapid development of wireless communication technology and new wireless communication technologies increasingly require communication transceivers to work in multiple frequency bands and support multiple communication standards at the same time, so as to achieve the purpose of reducing costs and reducing size. Therefore, the market urgently needs the RF and microwave power amplifiers of transmitters to have at least dual-band high output power, high gain, high efficiency, low cost and other performance.

[0003] In general, the design of power amplifier circuits is to optimize only one frequency band to achieve the best performance. Usually, the best circuit solution for the optimal design of each frequency band is to switch multiple power amplifiers through switches, or to use a power amplifier with a reconfigurable structure. However, these structures can only work in one frequency band at a certain time, and it is difficult to achieve the requirement of working in multiple frequency bands at the same time. In addition, it has the disadvantages of large occupied area, complex circuit and high cost. Therefore, the impedance matching design method that only uses one matching circuit to meet two predetermined frequency points at the same time has broad application prospects. Summary of the invention

[0004] The technical problem to be solved by the present invention is to provide a dual-band high-efficiency RF power amplifier, which combines the advantages of input dual-frequency directional coupler, dual-channel broadband amplification network and output dual-frequency directional coupler synthesis technology, and has the advantages of high power, high gain and low cost in two frequency bands of microwave frequency band. At the same time, the amplifier can be powered by low voltage, solving the problem of high voltage power supply.

[0005] The technical solution of the present invention to solve the above technical problems is as follows: A dual-band high-efficiency radio frequency power amplifier, characterized in that it includes an input dual-frequency directional coupler, a dual-channel broadband amplification network and an output dual-frequency directional coupler;

[0006] The input end of the input dual-frequency directional coupler is the input end of the entire amplifier, and its first output end and second output end are respectively connected to the first input end and second input end of the dual-channel broadband amplification network; the first output end and second output end of the dual-channel broadband amplification network are respectively connected to the first input end and second input end of the output dual-frequency directional coupler; the output end of the output dual-frequency directional coupler is the output end of the entire amplifier.

[0007] The beneficial effects of the technical solution of the present invention are: a dual-channel broadband amplification network is used with high power and high gain characteristics, and at the same time, the input dual-frequency directional coupler and the output dual-frequency directional coupler have good low insertion loss and standing wave matching characteristics in two frequency bands of the microwave frequency band, so that the entire power amplifier obtains good high gain, high efficiency, good standing wave characteristics and high power output capability.

[0008] Furthermore, the input end of the input dual-frequency directional coupler is connected to the microstrip line TL2 and the microstrip line TL3, the other end of the microstrip line TL3 is simultaneously connected to the open microstrip line TL4, the microstrip line TL5 and the grounded microstrip line TL6, the other end of the microstrip line TL5 is connected to the microstrip line TL7 and the capacitor C1, the other end of the capacitor C1 is the first output end of the input dual-frequency directional coupler; the other end of the microstrip line TL2 is simultaneously connected to the open microstrip line TL1, the microstrip line TL 11 and grounded microstrip line TL8, microstrip line TL 11 The other end is connected to the microstrip line TL 14 And grounding resistor R1, microstrip line TL 14 The other end is connected to the open microstrip line TL 15 , Microstrip Line TL 16 and grounded microstrip line TL 12 , microstrip line TL 16 The other end is connected to the microstrip line TL 13 and capacitor C2, microstrip line TL 13 The other end of the microstrip line TL7 is connected to the other end of the open microstrip line TL 10 And the grounded microstrip line TL9, the other end of the capacitor C2 is the second output end of the input dual-frequency directional coupler.

[0009] The beneficial effect of the above further solution is that the input dual-frequency directional coupler used in the present invention has good low insertion loss and input standing wave matching characteristics in two independent frequency bands of the microwave frequency band.

[0010] Furthermore, the first input end of the dual-channel broadband amplifier network is connected in sequence to the microstrip line TL 17 , low resistance microstrip line TW1 and microstrip line TL 18 , microstrip line TL 18 The other end of the resistor R2 is connected to the microstrip line TL 20 , microstrip line TL 20 The other end is connected to the bias voltage V g2 and grounded capacitor C3, the other end of the low-resistance microstrip line TW2 is connected to the microstrip line TL 19 , microstrip line TL 19 The other end is connected to the gate of the field effect transistor M1, the source of the field effect transistor M1 is grounded, and the drain is connected to the microstrip line TL21 , microstrip line TL 21 The other end is connected to the low resistance microstrip line TW3 and the microstrip line TL 22 , microstrip line TL 22 The other end of the low-resistance microstrip line TW6 is connected to the open circuit, and the other end of the low-resistance microstrip line TW3 is connected to the microstrip line TL 23 and low-resistance microstrip line TW4, the other end of which is connected to inductor L1 and microstrip line TL 24 , the other end of the inductor L1 is connected to the bias voltage V d2 and grounding capacitor C4, microstrip line TL 24 The other end is connected to the low-resistance microstrip line TW5 and the microstrip line TL 25 , microstrip line TL 25 The other end is the first output end of the dual-channel broadband amplifier network; the second input end of the dual-channel broadband amplifier network is connected in turn to the microstrip line TL 26 , low resistance microstrip line TW7 and microstrip line TL 27 , microstrip line TL 27 The other end of the resistor R3 is connected to the microstrip line TL 29 , microstrip line TL 29 The other end is connected to the bias voltage V g1 and grounded capacitor C5, the other end of the low-resistance microstrip line TW8 is connected to the microstrip line TL 28 , microstrip line TL 28 The other end is connected to the gate of the field effect transistor M2, the source of the field effect transistor M2 is grounded, and the drain is connected to the microstrip line TL 30 , microstrip line TL 30 The other end is connected to the low resistance microstrip line TW9 and the microstrip line TL 31 , microstrip line TL 31 The other end is connected to an open circuit low resistance microstrip line TW 12 The other end of the low-resistance microstrip line TW9 is connected to the microstrip line TL 32 and low resistance microstrip line TW 10 , low resistance microstrip line TW 10 The other end of the inductor L2 is connected to the microstrip line TL 33 , the other end of inductor L2 is connected to the bias voltage V d1 and grounding capacitor C6, microstrip line TL 33 The other end is connected to the low resistance microstrip line TW 11 and microstrip line TL 34 , microstrip line TL 34 The other end is the second output end of the dual-channel broadband amplification network.

[0011] The beneficial effect of the above further scheme is that the dual-channel broadband amplification network of the present invention adopts a high-order high-low impedance transformation line structure to achieve good broadband matching characteristics with low insertion loss, and at the same time, double power improvement can be obtained through a dual-channel balanced amplifier.

[0012] Furthermore, the first input end of the output dual-frequency directional coupler is connected to capacitor C7, and the other end of capacitor C7 is connected to microstrip line TL 35 and microstrip line TL 38 , microstrip line TL 35 The other end is connected to the open microstrip line TL 36 , Microstrip Line TL 37 and grounded microstrip line TL 39 , microstrip line TL 37 The other end is connected to the microstrip line TL 40 The second input end of the output dual-frequency directional coupler is connected to the capacitor C8, and the other end of the capacitor C8 is connected to the microstrip line TL 45 and microstrip line TL 48 , microstrip line TL 45 The other end is connected to the microstrip line TL 38 The other end of the open microstrip line TL 41 and grounded microstrip line TL 42 , microstrip line TL 48 The other end is connected to the open microstrip line TL 49 , Microstrip Line TL 50 and grounded microstrip line TL 46 , microstrip line TL 50 The other end is connected to the microstrip line TL 47 , microstrip line TL 47 The other end is connected to the microstrip line TL 40 The other end of the open microstrip line TL 44 and grounded microstrip line TL 43 , microstrip line TL 47 and microstrip line TL 50 The connection node is the output end of the output dual-band directional coupler.

[0013] The beneficial effect of the above further solution is that the output dual-frequency directional coupler has good low insertion loss and output standing wave matching characteristics in two independent frequency bands in the microwave frequency band. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 This is a principle block diagram of the power amplifier of the present invention;

[0015] Figure 2 This is a circuit diagram of a power amplifier according to the present invention. DETAILED DESCRIPTION

[0016] Now, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. It should be understood that the embodiments shown and described in the accompanying drawings are only exemplary and are intended to explain the principles and spirit of the present invention, rather than to limit the scope of the present invention.

[0017] The embodiment of the present invention provides a dual-band high-efficiency radio frequency power amplifier, comprising an input dual-band directional coupler, a dual-channel broadband amplification network and an output dual-band directional coupler.

[0018] like Figure 1 As shown, the input end of the input dual-frequency directional coupler is the input end of the entire amplifier, the first output end is connected to the first input end of the dual-channel broadband amplification network, and the second output end is connected to the second input end of the dual-channel broadband amplification network; the first output end of the dual-channel broadband amplification network is connected to the first input end of the output dual-frequency directional coupler; the second output end of the dual-channel broadband amplification network is connected to the second input end of the output dual-frequency directional coupler; the output end of the output dual-frequency directional coupler is the output end of the entire amplifier.

[0019] like Figure 2 As shown, the input end of the input dual-frequency directional coupler is connected to the microstrip line TL2 and the microstrip line TL3, the other end of the microstrip line TL3 is simultaneously connected to the open microstrip line TL4, the microstrip line TL5 and the grounded microstrip line TL6, the other end of the microstrip line TL5 is connected to the microstrip line TL7 and the capacitor C1, the other end of the capacitor C1 is the first output end of the input dual-frequency directional coupler; the other end of the microstrip line TL2 is simultaneously connected to the open microstrip line TL1, the microstrip line TL 11 and grounded microstrip line TL8, microstrip line TL 11 The other end is connected to the microstrip line TL 14 And grounding resistor R1, microstrip line TL 14 The other end is connected to the open microstrip line TL 15 , Microstrip Line TL 16 and grounded microstrip line TL 12 , microstrip line TL 16 The other end is connected to the microstrip line TL 13 and capacitor C2, microstrip line TL 13 The other end of the microstrip line TL7 is connected to the other end of the open microstrip line TL 10 And the grounded microstrip line TL9, the other end of the capacitor C2 is the second output end of the input dual-frequency directional coupler.

[0020] like Figure 2 As shown, the first input end of the dual-channel broadband amplifier network is connected to the microstrip line TL 17 , low resistance microstrip line TW1 and microstrip line TL 18 , microstrip line TL 18The other end of the resistor R2 is connected to the microstrip line TL 20 , microstrip line TL 20 The other end is connected to the bias voltage V g2 and grounded capacitor C3, the other end of the low-resistance microstrip line TW2 is connected to the microstrip line TL 19 , microstrip line TL 19 The other end is connected to the gate of the field effect transistor M1, the source of the field effect transistor M1 is grounded, and the drain is connected to the microstrip line TL 21 , microstrip line TL 21 The other end is connected to the low resistance microstrip line TW3 and the microstrip line TL 22 , microstrip line TL 22 The other end of the low-resistance microstrip line TW6 is connected to the open circuit, and the other end of the low-resistance microstrip line TW3 is connected to the microstrip line TL 23 and low-resistance microstrip line TW4, the other end of which is connected to inductor L1 and microstrip line TL 24 , the other end of the inductor L1 is connected to the bias voltage V d2 and grounding capacitor C4, microstrip line TL 24 The other end is connected to the low-resistance microstrip line TW5 and the microstrip line TL 25 , microstrip line TL 25 The other end is the first output end of the dual-channel broadband amplifier network; the second input end of the dual-channel broadband amplifier network is connected in turn to the microstrip line TL 26 , low resistance microstrip line TW7 and microstrip line TL 27 , microstrip line TL 27 The other end of the resistor R3 is connected to the microstrip line TL 29 , microstrip line TL 29 The other end is connected to the bias voltage V g1 and grounded capacitor C5, the other end of the low-resistance microstrip line TW8 is connected to the microstrip line TL 28 , microstrip line TL 28 The other end is connected to the gate of the field effect transistor M2, the source of the field effect transistor M2 is grounded, and the drain is connected to the microstrip line TL 30 , microstrip line TL 30 The other end is connected to the low resistance microstrip line TW9 and the microstrip line TL 31 , microstrip line TL 31 The other end is connected to an open low-resistance microstrip line TW 12 The other end of the low-resistance microstrip line TW9 is connected to the microstrip line TL 32 and low resistance microstrip line TW 10 , low resistance microstrip line TW 10 The other end of the inductor L2 is connected to the microstrip line TL 33, the other end of inductor L2 is connected to the bias voltage V d1 and grounding capacitor C6, microstrip line TL 33 The other end is connected to the low resistance microstrip line TW 11 and microstrip line TL 34 , microstrip line TL 34 The other end is the second output end of the dual-channel broadband amplification network.

[0021] like Figure 2 As shown, the first input end of the output dual-frequency directional coupler is connected to capacitor C7, and the other end of capacitor C7 is connected to microstrip line TL 35 and microstrip line TL 38 , microstrip line TL 35 The other end is connected to the open microstrip line TL 36 , Microstrip Line TL 37 and grounded microstrip line TL 39 , microstrip line TL 37 The other end is connected to the microstrip line TL 40 The second input end of the output dual-frequency directional coupler is connected to the capacitor C8, and the other end of the capacitor C8 is connected to the microstrip line TL 45 and microstrip line TL 48 , microstrip line TL 45 The other end is connected to the microstrip line TL 38 The other end of the open microstrip line TL 41 and grounded microstrip line TL 42 , microstrip line TL 48 The other end is connected to the open microstrip line TL 49 , Microstrip Line TL 50 and grounded microstrip line TL 46 , microstrip line TL 50 The other end is connected to the microstrip line TL 47 , microstrip line TL 47 The other end is connected to the microstrip line TL 40 The other end of the open microstrip line TL 44 and grounded microstrip line TL 43 , microstrip line TL 47 and microstrip line TL 50 The connection node is the output end of the output dual-band directional coupler.

[0022] Combine the following Figure 2 The specific working principle and process of the present invention are introduced:

[0023] The RF input signal is passed through the input terminal RF inEntering the circuit, it is divided into two balanced signals with a phase difference of 90 degrees after entering the dual-frequency directional coupler, and then enters the first input end and the second input end of the dual-channel broadband amplifier network at the same time. After high-efficiency power amplification through the amplifier network, it is output from the first output end and the second output end of the dual-channel broadband amplifier network respectively. After passing through the output dual-frequency directional coupler, the two balanced signals are combined into a single-ended signal from the output end RF out Output, the input dual-frequency directional coupler and the output dual-frequency directional coupler can work in two independent frequency bands at the same time, and the working frequency band of the dual-channel broadband amplification network can cover these two frequency bands at the same time.

[0024] In a dual-band high-efficiency RF power amplifier, the size of the transistor and the sizes of other resistors and capacitors are determined after comprehensive consideration of various indicators such as the gain, bandwidth and output power of the entire circuit. Through subsequent layout design and reasonable layout, the required indicators can be better achieved, and high power output, high power gain, high efficiency and good input-output matching characteristics can be achieved.

[0025] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A dual-band high-efficiency radio frequency power amplifier, characterized in that: It includes an input dual-frequency directional coupler, a dual-channel broadband amplification network, and an output dual-frequency directional coupler; The input end of the input dual-frequency directional coupler is the input end of the entire amplifier, and the first output end and the second output end of the input dual-channel broadband amplification network are respectively connected to the first input end and the second input end of the dual-channel broadband amplification network; the first output end and the second output end of the dual-channel broadband amplification network are respectively connected to the first input end and the second input end of the output dual-frequency directional coupler; the output end of the output dual-frequency directional coupler is the output end of the entire amplifier; The first input end of the dual-channel broadband amplifier network is connected to the microstrip line TL17, the low-resistance microstrip line TW1 and the microstrip line TL18 in sequence, the other end of the microstrip line TL18 is connected to the resistor R2 and the low-resistance microstrip line TW2, the other end of the resistor R2 is connected to the microstrip line TL20, the other end of the microstrip line TL20 is connected to the bias voltage Vg2 and the grounding capacitor C3, the other end of the low-resistance microstrip line TW2 is connected to the microstrip line TL19, the other end of the microstrip line TL19 is connected to the gate of the field effect transistor M1, the source of the field effect transistor M1 is grounded, the drain is connected to the microstrip line TL21, and the micro The other end of the strip line TL21 is connected to the low-resistance microstrip line TW3 and the microstrip line TL22, the other end of the microstrip line TL22 is connected to the open-circuit low-resistance microstrip line TW6, the other end of the low-resistance microstrip line TW3 is connected to the microstrip line TL23 and the low-resistance microstrip line TW4 in sequence, the other end of the low-resistance microstrip line TW4 is connected to the inductor L1 and the microstrip line TL24, the other end of the inductor L1 is connected to the bias voltage Vd2 and the grounding capacitor C4, the other end of the microstrip line TL24 is connected to the low-resistance microstrip line TW5 and the microstrip line TL25 in sequence, and the other end of the microstrip line TL25 is the first output end of the dual-channel broadband amplification network; The second input end of the dual-channel broadband amplifier network is connected to the microstrip line TL26, the low-resistance microstrip line TW7 and the microstrip line TL27 in sequence, the other end of the microstrip line TL27 is connected to the resistor R3 and the low-resistance microstrip line TW8, the other end of the resistor R3 is connected to the microstrip line TL29, the other end of the microstrip line TL29 is connected to the bias voltage Vg1 and the grounding capacitor C5, the other end of the low-resistance microstrip line TW8 is connected to the microstrip line TL28, the other end of the microstrip line TL28 is connected to the gate of the field effect transistor M2, the source of the field effect transistor M2 is grounded, the drain is connected to the microstrip line TL30, the microstrip line TL The other end of 30 is connected to the low-resistance microstrip line TW9 and the microstrip line TL31, the other end of the microstrip line TL31 is connected to the open-circuit low-resistance microstrip line TW12, the other end of the low-resistance microstrip line TW9 is connected to the microstrip line TL32 and the low-resistance microstrip line TW10 in sequence, the other end of the low-resistance microstrip line TW10 is connected to the inductor L2 and the microstrip line TL33, the other end of the inductor L2 is connected to the bias voltage Vd1 and the grounding capacitor C6, the other end of the microstrip line TL33 is connected to the low-resistance microstrip line TW11 and the microstrip line TL34 in sequence, and the other end of the microstrip line TL34 is the second output end of the dual-channel broadband amplifier network; The input dual-frequency directional coupler and the output dual-frequency directional coupler work in two independent frequency bands at the same time, and the working frequency band of the dual-channel broadband amplification network covers these two frequency bands at the same time.

2. A dual-band high-efficiency RF power amplifier according to claim 1, characterized in that: The input end of the input dual-frequency directional coupler is connected to microstrip line TL2 and microstrip line TL3, the other end of microstrip line TL3 is simultaneously connected to open microstrip line TL4, microstrip line TL5 and grounded microstrip line TL6, the other end of microstrip line TL5 is connected to microstrip line TL7 and capacitor C1, and the other end of capacitor C1 is the first output end of the input dual-frequency directional coupler; the other end of microstrip line TL2 is simultaneously connected to open microstrip line TL1, microstrip line TL11 and grounded microstrip line TL8, the other end of microstrip line TL11 is connected to microstrip line TL14 and grounding resistor R1, the other end of microstrip line TL14 is simultaneously connected to open microstrip line TL15, microstrip line TL16 and grounded microstrip line TL12, the other end of microstrip line TL16 is connected to microstrip line TL13 and capacitor C2, the other end of microstrip line TL13 is simultaneously connected to the other end of microstrip line TL7, open microstrip line TL10 and grounded microstrip line TL9, and the other end of capacitor C2 is the second output end of the input dual-frequency directional coupler.

3. A dual-band high-efficiency RF power amplifier according to claim 1, characterized in that: The first input end of the output dual-frequency directional coupler is connected to capacitor C7, the other end of capacitor C7 is connected to microstrip line TL35 and microstrip line TL38, the other end of microstrip line TL35 is connected to open microstrip line TL36, microstrip line TL37 and grounded microstrip line TL39, the other end of microstrip line TL37 is connected to microstrip line TL40 and grounding resistor R4; the second input end of the output dual-frequency directional coupler is connected to capacitor C8, the other end of capacitor C8 is connected to microstrip line TL45 and microstrip line TL48, the other end of microstrip line TL45 is connected to grounding resistor R4. The other end of the microstrip line TL38 is connected to the open microstrip line TL41 and the grounded microstrip line TL42, the other end of the microstrip line TL48 is connected to the open microstrip line TL49, the microstrip line TL50 and the grounded microstrip line TL46, the other end of the microstrip line TL50 is connected to the microstrip line TL47, the other end of the microstrip line TL47 is connected to the other end of the microstrip line TL40, the open microstrip line TL44 and the grounded microstrip line TL43, and the connection node between the microstrip line TL47 and the microstrip line TL50 is the output end of the output dual-frequency directional coupler.

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