Display device

Abstract

The display device includes: a base substrate including a first sub-pixel region, a second sub-pixel region, and a third sub-pixel region; first to third thin film transistors arranged on the base substrate and respectively including first to third active patterns; first to third pixel electrodes electrically connected to the first to third thin film transistors, respectively, and arranged in the first to third sub-pixel regions, respectively; a blue light emitting layer arranged on the first to third pixel electrodes and emitting blue light; a first color conversion pattern arranged in the first sub-pixel region on the light emitting layer; a second color conversion pattern arranged in the second sub-pixel region on the light emitting layer; and a red color filter layer arranged between the light emitting layer and the first to third active patterns.

Description

Technical Field

[0001] Embodiments relate to a display device. More particularly, embodiments of the inventive concept relate to an organic light emitting diode display device including a color conversion structure such as a quantum dot. Background Art

[0002] Recently, with the improvement of technology, display products with smaller size, lighter weight and excellent performance have been produced. Conventional cathode ray tube (CRT) televisions have been widely used in display devices due to many advantages in terms of performance and price. However, recently, display devices (such as plasma display devices, liquid crystal display devices and organic light emitting diode display devices) that overcome the weaknesses of CRT in terms of miniaturization or portability and have advantages such as miniaturization, light weight and low power consumption have received attention.

[0003] In order to improve color reproducibility and luminous efficiency, a display device including a color conversion structure such as quantum dots has been developed. However, the display device may have a structure different from that of a conventional display device, so that display quality may be deteriorated. Summary of the invention

[0004] Technical issues

[0005] The embodiment provides a display device in which display quality is improved, the display device including a color conversion structure such as quantum dots and a light emitting structure.

[0006] Technical Solution

[0007] According to an embodiment, a display device may include: a base substrate including a first sub-pixel region, a second sub-pixel region, and a third sub-pixel region; first to third thin film transistors disposed on the base substrate and respectively including first to third active patterns; first to third pixel electrodes electrically connected to the first to third thin film transistors, respectively, and disposed in the first to third sub-pixel regions, respectively; a blue light emitting layer disposed on the first to third pixel electrodes and configured to emit blue light; a first color conversion pattern disposed in the first sub-pixel region on the blue light emitting layer; a second color conversion pattern disposed in the second sub-pixel region on the blue light emitting layer; and a red color filter layer disposed between the blue light emitting layer and the first to third active patterns.

[0008] In an embodiment, the first color conversion pattern may include at least one selected from red quantum dot particles and red phosphors. In addition, the second color conversion pattern may include at least one selected from green quantum dot particles and green phosphors.

[0009] In an embodiment, the display device may further include: a first color filter disposed on the first color conversion pattern; and a second color filter disposed on the second color conversion pattern.

[0010] In an embodiment, the first color filter and the red color filter layer may include the same material.

[0011] In an embodiment, the display device may further include: a transmissive pattern disposed in a third sub-pixel region on the blue light emitting layer; a third color filter disposed on the transmissive pattern; a relative substrate facing the base substrate; a first insulating layer disposed between the relative substrate and the first color conversion pattern, between the relative substrate and the second color conversion pattern, and between the relative substrate and the transmissive pattern, the first insulating layer comprising an inorganic insulating material; and a second insulating layer disposed between the blue light emitting layer and the first color conversion pattern, between the blue light emitting layer and the second color conversion pattern, and between the blue light emitting layer and the transmissive pattern, the second insulating layer comprising an inorganic insulating material.

[0012] In an embodiment, the display device may further include: a counter electrode disposed on the blue light emitting layer; a thin film encapsulation layer disposed on the counter electrode; and an adhesive layer disposed between the thin film encapsulation layer and the second insulating layer.

[0013] In an embodiment, a blue light emitting layer may be commonly formed in the first to third sub-pixel regions.

[0014] In an embodiment, the display device may further include: a through-hole insulating layer disposed between the red color filter layer and the first to third pixel electrodes, and including an organic material. In addition, the first to third pixel electrodes may be electrically connected to the first to third thin film transistors through contact holes formed through the through-hole insulating layer and the red color filter layer, respectively.

[0015] In an embodiment, the display device may further include: a through-hole insulating layer, which is disposed between the red color filter layer and the first to third thin film transistors and includes an organic material. In addition, the first to third pixel electrodes may be electrically connected to the first to third thin film transistors through contact holes formed through the red color filter layer and the through-hole insulating layer, respectively.

[0016] In an embodiment, the red color filter layer may be disposed between the first pixel electrode to the third pixel electrode and the first thin film transistor to the third thin film transistor and have a flat top surface. In addition, the first pixel electrode to the third pixel electrode may be electrically connected to the first thin film transistor to the third thin film transistor through contact holes formed through the red color filter layer, respectively.

[0017] In an embodiment, the display device may further include: a through-hole insulating layer, which is arranged between the first pixel electrode to the third pixel electrode and the first thin film transistor to the third thin film transistor, and includes an organic material. In addition, the first pixel electrode to the third pixel electrode may be electrically connected to the first thin film transistor to the third thin film transistor through a contact hole formed through the through-hole insulating layer, respectively. In addition, the red color filter layer may be a pixel defining layer, which is arranged on the through-hole insulating layer on which the first pixel electrode to the third pixel electrode are arranged and has openings that partially expose the first pixel electrode to the third pixel electrode, respectively.

[0018] In an embodiment, a red color filter layer may overlap the first to third thin film transistors.

[0019] In an embodiment, the first to third active patterns may include an oxide semiconductor.

[0020] In an embodiment, the first to third thin film transistors may further include first to third gate electrodes, first to third source electrodes, and first to third drain electrodes, respectively. In addition, the display device may further include: a gate insulating layer disposed between the first to third active patterns and the first to third gate electrodes; and an interlayer insulating layer disposed on the gate insulating layer on which the first to third gate electrodes are disposed. In addition, the first to third active patterns may be disposed between the gate insulating layer and the base substrate.

[0021] In an embodiment, the display device may further include first to third lower shielding electrodes disposed between the base substrate and the first to third active patterns, respectively.

[0022] According to an embodiment, a display device may include: a first sub-pixel configured to emit red light; a second sub-pixel configured to emit green light; and a third sub-pixel configured to emit blue light. The first sub-pixel may include a first thin film transistor, a first blue light-emitting layer, and a red conversion pattern disposed on the first blue light-emitting layer. The second sub-pixel may include a second thin film transistor, a second blue light-emitting layer, and a green conversion pattern disposed on the second blue light-emitting layer. The third sub-pixel may include a third thin film transistor and a third blue light-emitting layer. The display device may further include a red color filter layer disposed between the first thin film transistor and the first blue light-emitting layer, between the second thin film transistor and the second blue light-emitting layer, and between the third thin film transistor and the third blue light-emitting layer.

[0023] In an embodiment, the first to third thin film transistors may include an oxide semiconductor.

[0024] In an embodiment, the red conversion pattern may include at least one selected from red quantum dot particles and red phosphors. In addition, the green conversion pattern may include at least one selected from green quantum dot particles and green phosphors.

[0025] In an embodiment, the first to third blue light emitting layers of the first to third sub-pixels may be commonly formed and connected to each other.

[0026] In an embodiment, a red color filter layer may overlap the first to third thin film transistors.

[0027] Beneficial Effects

[0028] According to an embodiment of the present invention, a display device may include a thin film transistor including an oxide semiconductor, a blue light emitting layer, a color conversion pattern, and a red color filter layer. The display device may include a color conversion structure such as a quantum dot to improve color reproducibility, so that the display quality can be improved, and the red color filter layer can prevent the blue light generated from the blue light emitting layer from affecting the thin film transistor including the oxide semiconductor. Therefore, the display quality can be improved.

[0029] However, the effects of the inventive concept are not limited thereto. Therefore, the effects of the inventive concept can be expanded without departing from the spirit and scope of the inventive concept. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 is a block diagram showing a display device according to an embodiment.

[0031] Figure 2 It is shown Figure 1 A cross-sectional view of a first sub-pixel to a third sub-pixel of a display device.

[0032] Figure 3 2 is a cross-sectional view showing first to third sub-pixels of a display device according to an embodiment.

[0033] Figure 4 2 is a cross-sectional view showing first to third sub-pixels of a display device according to an embodiment.

[0034] Figure 5 2 is a cross-sectional view showing first to third sub-pixels of a display device according to an embodiment.

[0035] Figure 6 is a block diagram illustrating an electronic device according to an embodiment.

[0036] Figure 7a It shows that Figure 6 The electronic device is implemented as an example of a television.

[0037] Figure 7b It shows that Figure 6 The electronic device is implemented as an example of a smart phone. DETAILED DESCRIPTION

[0038] Hereinafter, embodiments of the inventive concept will be explained in detail with reference to the accompanying drawings.

[0039] Figure 1 is a block diagram showing a display device according to an embodiment.

[0040] Reference Figure 1 , the display device may include a display panel 10 , a scan driver 20 , a data driver 30 , an emission control driver (also referred to as an emission driver) 40 , and a controller 50 .

[0041] The display panel 10 may include a plurality of pixel units UPX for displaying an image. The pixel unit UPX may include a first sub-pixel SP1, a second sub-pixel SP2, and a third sub-pixel SP3 that emit light of mutually different colors. In other words, the first sub-pixel SP1 may emit a first color light, the second sub-pixel SP2 may emit a second color light, and the third sub-pixel SP3 may emit a third color light. For example, the first sub-pixel SP1 may be a red sub-pixel configured to emit red light, the second sub-pixel SP2 may be a green sub-pixel configured to emit green light, and the third sub-pixel SP3 may be a blue sub-pixel configured to emit blue light.

[0042] For example, the display panel 10 may include n×m subpixels (where each of n and m is an integer greater than 1) located at intersections of the scan lines SL1 to SLn and the data lines DL1 to DLm. Each subpixel may include at least one transistor and at least one storage capacitor.

[0043] The scan driver 20 may sequentially supply a first scan signal to the sub-pixels through the scan lines SL1 to SLn based on the first control signal CTL1 .

[0044] The data driver 30 may provide data signals to the sub-pixels through the data lines DL1 to DLm based on the second control signal CTL2 .

[0045] The emission control driver 40 may sequentially provide emission control signals to the sub-pixels through the emission control lines EM1 to EMn based on the third control signal CTL3 .

[0046] The controller 50 may control the scan driver 20, the data driver 30, and the emission control driver 40. The controller 50 may generate control signals CTL1 to CTL3 to control the scan driver 20, the data driver 30, and the emission control driver 40. The first control signal CTL1 for controlling the scan driver 20 may include a scan start signal, a scan clock signal, etc. The second control signal CTL2 for controlling the data driver 30 may include image data, a horizontal start signal, etc. The third control signal CTL3 for controlling the emission control driver 40 may include an emission control start signal, an emission control clock signal, etc.

[0047] In addition, the display device may further include a power supply unit (not shown) configured to supply the first power voltage ELVDD, the second power voltage ELVSS, and the initialization voltage VINT to the display panel 10 .

[0048] Figure 2 It is shown Figure 1 A cross-sectional view of a first sub-pixel to a third sub-pixel of a display device.

[0049] Reference Figure 2 The display device may include a base substrate 100, a first buffer layer 110, a lower shielding electrode, a second buffer layer 120, an active pattern layer, a gate insulating layer 130, a gate pattern, an interlayer insulating layer 140, a source / drain pattern, a red color filter layer RCFL, a through hole (via, also known as a via) insulating layer 150, a pixel electrode layer, a pixel defining layer PDL, a blue light emitting layer 180, a counter electrode CE, a thin film encapsulation layer TFE, an adhesive layer 230, a second insulating layer 220, a QD layer, a first insulating layer 210, a color filter layer, a light blocking pattern BM and a relative substrate 200.

[0050] The base substrate 100 may include a transparent insulating substrate. For example, the base substrate 100 may be configured as a glass substrate, a quartz substrate, a transparent resin substrate, etc. In this case, the transparent resin substrate may include polyimide resin, acrylic resin, polyacrylate resin, polycarbonate resin, polyether resin, sulfonic acid resin, polyethylene terephthalate resin, etc.

[0051] The base substrate 100 may include a first subpixel region corresponding to the first subpixel SP1, a second subpixel region corresponding to the second subpixel SP2, and a third subpixel region corresponding to the third subpixel SP3. The first to third subpixel regions may be divided by a light blocking pattern BM to be described below.

[0052] The first buffer layer 110 may be disposed over the entire base substrate 100. The first buffer layer 110 may prevent metal atoms or impurities from diffusing from the base substrate 100 into the active pattern layer.

[0053] The lower shielding electrode may be disposed on the first buffer layer 110. The lower shielding electrode may prevent the characteristics of the thin film transistor to be described below from being degraded. Specifically, when the base substrate 100 includes polyimide, mobile charges may be generated, and the mobile charges may affect the semiconductor layer of the thin film transistor and reduce the driving current. In this case, the lower shielding electrode may prevent the amount of current in the semiconductor layer from being reduced due to the flow of charges in the polyimide (PI) layer.

[0054] The lower shielding electrode may be in a floating state, or may be connected to the drain electrode of each thin film transistor as shown in the figure. Although the lower shielding electrode has been described as being connected to the drain electrode according to the present embodiment, the lower shielding electrode may be connected to other constant voltage sources having a constant voltage level. The lower shielding electrode may be formed to correspond to each thin film transistor, and may include a first lower shielding electrode BML1, a second lower shielding electrode BML2, and a third lower shielding electrode BML3 as shown in the figure.

[0055] The second buffer layer 120 may be disposed on the first buffer layer 110 on which the lower shielding electrode is disposed. The second buffer layer 120 may be disposed over the entire base substrate 100. The second buffer layer 120 may prevent metal atoms or impurities from diffusing from the base substrate 100 into the active pattern layer.

[0056] The active pattern layer may include a first active pattern ACT1, a second active pattern ACT2, and a third active pattern ACT3. The active pattern layer may include a binary compound (AB) containing indium (In), zinc (Zn), gallium (Ga), tin (Sn), titanium (Ti), aluminum (Al), hafnium (Hf), zirconium (Zr), magnesium (Mg), etc. x ), ternary compounds (AB x C y ), quaternary compounds (AB x C y D z ) or the like. For example, the active pattern layer may include zinc oxide (ZnO x ), gallium oxide (GaO x ), titanium oxide (TiO x ), tin oxide (SnO x ), indium oxide (InO x ), indium gallium oxide (IGO), indium zinc oxide (IZO), indium tin oxide (ITO), gallium zinc oxide (GZO), zinc magnesium oxide (ZMO), zinc tin oxide (ZTO), zinc zirconium oxide (ZnZr x O y), indium gallium zinc oxide (IGZO), indium zinc tin oxide (IZTO), indium gallium hafnium oxide (IGHO), tin aluminum zinc oxide (TAZO), indium gallium tin oxide (IGTO), etc.

[0057] Each of the first, second, and third active patterns ACT1, ACT2, and ACT3 may include a drain region and a source region doped with impurities and a channel region disposed between the drain region and the source region.

[0058] The gate insulating layer 130 may be disposed on the second buffer layer 120 on which the active pattern layer is disposed. The gate insulating layer 130 may be disposed along the contour of the active pattern layer with substantially the same thickness to cover the active pattern layer on the second buffer layer 120. The gate insulating layer 130 may include an inorganic insulating material such as a silicon compound and a metal oxide.

[0059] The gate pattern may be disposed on the gate insulating layer 130. The gate pattern may include a first gate electrode GE1, a second gate electrode GE2, a third gate electrode GE3, and a signal line (such as a gate line) configured to transmit a signal for driving the display device. The gate pattern may include metal. In addition, the gate pattern may include a plurality of metal layers.

[0060] The interlayer insulating layer 140 may be disposed on the gate insulating layer 130 on which the gate pattern is disposed. The interlayer insulating layer 140 may sufficiently cover the gate pattern on the gate insulating layer 130 and may have a substantially flat top surface without generating a step around the gate pattern. The interlayer insulating layer 140 may include an inorganic insulating material such as a silicon compound and a metal oxide.

[0061] The source / drain pattern may be disposed on the interlayer insulating layer 140. The source / drain pattern may include a first source electrode SE1, a first drain electrode DE1, a second source electrode SE2, a second drain electrode DE2, a third source electrode SE3, and a third drain electrode DE3. The source / drain pattern may include a metal. In addition, the source / drain pattern may include a plurality of metal layers. The first source electrode SE1 and the first drain electrode DE1 may be electrically connected to the first active pattern ACT1 through a contact hole formed through the interlayer insulating layer 140 and the gate insulating layer 130. The second source electrode SE2 and the second drain electrode DE2 may be electrically connected to the second active pattern ACT2 through a contact hole formed through the interlayer insulating layer 140 and the gate insulating layer 130. The third source electrode SE3 and the third drain electrode DE3 may be electrically connected to the third active pattern ACT3 through a contact hole formed through the interlayer insulating layer 140 and the gate insulating layer 130.

[0062] In this case, the first drain electrode DE1, the second drain electrode DE2 and the third drain electrode DE3 can be electrically connected to the first lower shielding electrode BML1, the second lower shielding electrode BML2 and the third lower shielding electrode BML3 corresponding to the first drain electrode DE1, the second drain electrode DE2 and the third drain electrode DE3 respectively through contact holes formed through the interlayer insulating layer 140, the gate insulating layer 130 and the second buffer layer 120.

[0063] The first thin film transistor TFT1 may include a first gate electrode GE1, a first active pattern ACT1, a first source electrode SE1, and a first drain electrode DE1. The second thin film transistor TFT2 may include a second gate electrode GE2, a second active pattern ACT2, a second source electrode SE2, and a second drain electrode DE2. The third thin film transistor TFT3 may include a third gate electrode GE3, a third active pattern ACT3, a third source electrode SE3, and a third drain electrode DE3.

[0064] The red color filter layer RCFL may be disposed on the interlayer insulating layer 140 on which the source / drain pattern is disposed. The red color filter layer RCFL may allow passing light of a wavelength band corresponding to red light to pass therethrough, and may block blue light. In other words, the blue light generated from the blue light emitting layer 180 may be blocked by the red color filter layer RCFL, so that the blue light may be prevented from being incident on the first active pattern ACT1 of the first thin film transistor TFT1, the second active pattern ACT2 of the second thin film transistor TFT2, and the third active pattern ACT3 of the third thin film transistor TFT3. Therefore, changes in the characteristics of the first thin film transistor TFT1, the second thin film transistor TFT2, and the third thin film transistor TFT3 due to the blue light generated from the blue light emitting layer 180 may be minimized. Specifically, when the first thin film transistor TFT1, the second thin film transistor TFT2, and the third thin film transistor TFT3 include oxide semiconductors, changes in the characteristics due to the blue light may be large. Therefore, since the red color filter layer RCFL blocks blue light, negative bias illumination stress stability (NBIS) of the first thin film transistor TFT1, the second thin film transistor TFT2, and the third thin film transistor TFT3 can be improved, thereby improving display quality.

[0065] The through hole insulating layer 150 may be disposed on the red color filter layer RCFL. The through hole insulating layer 150 may have a single layer structure, or may have a multilayer structure including at least two or more insulating films. The through hole insulating layer 150 may be formed by using an organic material such as a photoresist, an acrylic resin, a polyimide resin, a polyamide resin, and a siloxane resin.

[0066] The pixel electrode layer may be disposed on the through-hole insulating layer 150. The pixel electrode layer may include a first pixel electrode PE1, a second pixel electrode PE2, and a third pixel electrode PE3. The pixel electrode layer may be formed by using a reflective material. In an embodiment, the pixel electrode layer may have a single-layer structure or a multi-layer structure including a metal film, an alloy film, a metal nitride film, a conductive metal oxide film, and / or a transparent conductive material film.

[0067] The first pixel electrode PE1 may be disposed in the first sub-pixel region. The first pixel electrode PE1 may be electrically connected to the first drain electrode DE1 of the first thin film transistor TFT1 through a contact hole formed through the through-hole insulating layer 150 and the red color filter layer RCFL.

[0068] The second pixel electrode PE2 may be disposed in the second sub-pixel region. The second pixel electrode PE2 may be electrically connected to the second drain electrode DE2 of the second thin film transistor TFT2 through a contact hole formed through the through-hole insulating layer 150 and the red color filter layer RCFL.

[0069] The third pixel electrode PE3 may be disposed in the third sub-pixel region. The third pixel electrode PE3 may be electrically connected to the third drain electrode DE3 of the third thin film transistor TFT3 through a contact hole formed through the through-hole insulating layer 150 and the red color filter layer RCFL.

[0070] The pixel defining layer PDL may be disposed on the through-hole insulating layer 150 on which the pixel electrode layer is disposed. The pixel defining layer PDL may be formed by using an organic material, an inorganic material, or the like. For example, the pixel defining layer PDL may be formed by using a photoresist, a polyacrylic resin, a polyimide resin, an acrylic resin, a silicone compound, or the like. According to an embodiment, the pixel defining layer PDL may be etched to form openings that partially expose the first pixel electrode PE1, the second pixel electrode PE2, and the third pixel electrode PE3, respectively. The emission region and the non-emission region of the display device may be defined by the opening of the pixel defining layer PDL. For example, the portion where the opening of the pixel defining layer PDL is located may correspond to the emission region, and the non-emission region may correspond to the portion adjacent to the opening of the pixel defining layer PDL.

[0071] The blue light emitting layer 180 may be disposed on the pixel defining layer PDL and the first pixel electrode PE1, the second pixel electrode PE2, and the third pixel electrode PE3. The blue light emitting layer 180 may have a multilayer structure including an organic emission layer (EL), a hole injection layer (HIL), a hole transport layer (HTL), an electron transport layer (ETL), an electron injection layer (EIL), and the like. The blue light emitting layer 180 may be formed in common to correspond to a plurality of pixels. The organic emission layer of the blue light emitting layer 180 may be formed by using a light emitting material for generating blue light. In addition, although the blue light emitting layer 180 has been described in the present embodiment as being formed in common to correspond to a plurality of pixels, the blue light emitting layer 180 may be formed to correspond to each of the plurality of pixels.

[0072] The counter electrode CE may be disposed on the blue light emitting layer 180. The counter electrode CE may include a transmissive material. In an embodiment, the counter electrode CE may have a single-layer structure or a multi-layer structure including a metal film, an alloy film, a metal nitride film, a conductive metal oxide film and / or a transparent conductive material film.

[0073] The thin film encapsulation layer TFE may be disposed on the counter electrode CE. The thin film encapsulation layer TFE may prevent moisture and oxygen from penetrating from the outside. The thin film encapsulation layer TFE may include at least one organic layer and at least one inorganic layer. At least one organic layer and at least one inorganic layer may be alternately stacked with each other. For example, the thin film encapsulation layer TFE may include two inorganic layers and an organic layer disposed therebetween, but the embodiment is not limited thereto.

[0074] The adhesive layer 230 may be disposed on the thin film encapsulation layer TFE. The adhesive layer 230 may be used to bond the base substrate 100 on which the thin film encapsulation layer TFE is formed to the opposite substrate 200 on which the second insulating layer 220 is formed.

[0075] The second insulating layer 220 may be disposed on the adhesive layer 230. The second insulating layer 220 may cover the QD layer. For example, the second insulating layer 220 may include a silicon nitride (SiN x ) of inorganic insulating materials.

[0076] The QD layer may be disposed on the second insulating layer 220. The QD layer may include a first color conversion pattern RQD, a second color conversion pattern GQD, and a transmissive pattern W.

[0077] The first color conversion pattern RQD may be disposed in the first sub-pixel region. The first color conversion pattern RQD may be a red conversion pattern. The first color conversion pattern RQD may convert blue light provided from the blue light emitting layer 180 into red light. For example, the first color conversion pattern RQD may include red quantum dot particles and / or red phosphors. In addition, the first color conversion pattern RQD may also include a red light source such as TiO2 of scattered particles.

[0078] The second color conversion pattern GQD may be disposed in the second sub-pixel region. The second color conversion pattern GQD may be a green conversion pattern. The second color conversion pattern GQD may convert the blue light provided from the blue light emitting layer 180 into green light. For example, the second color conversion pattern GQD may include green quantum dot particles and / or green phosphors. In addition, the second color conversion pattern GQD may also include a green light source such as TiO 2 of scattered particles.

[0079] The red quantum dots or green quantum dots may be materials having a crystal structure having a size of several nanometers, and may include hundreds to thousands of atoms. Since the size of the quantum dots is very small, a quantum confinement effect may be exhibited. The quantum confinement effect refers to a phenomenon in which the energy band gap of an object increases when the object becomes nanometer-sized or smaller. Therefore, when light having a wavelength with energy higher than the energy of the energy band gap is incident on the quantum dots, the quantum dots may absorb the light to be in an excited state, and when the quantum dots emit light having a specific wavelength, the quantum dots may drop to a ground state. The emitted light having a specific wavelength may have a value corresponding to the energy band gap. When the size and composition of the quantum dots are adjusted, the luminescence characteristics due to the quantum confinement effect may be adjusted.

[0080] The composition of the quantum dot is not particularly limited, and the quantum dot may include a II-VI group element, a III-V group element, a IV group element, or a IV-VI group element. The II group element may be at least one selected from the group consisting of zinc, cadmium, and mercury. The III group element may be at least one selected from the group consisting of aluminum, gallium, and indium. The IV group element may be at least one selected from the group consisting of silicon, germanium, tin, and lead. The V group element may be at least one selected from the group consisting of nitrogen, phosphorus, and arsenic. The VI group element may be one selected from the group consisting of sulfur, selenium, and tellurium.

[0081] The transmission pattern W may be disposed in the third sub-pixel region. The transmission pattern W may include scattering particles that only change the traveling direction of light passing through the transmission pattern W without changing the color of the light. Therefore, the light passing through the transmission pattern W may be blue light. The scattering particles may be TiO 2 The size of the scattering particles may correspond to the size of the red quantum dot particles or the green quantum dot particles. In addition, the transmission pattern W may further include a blue pigment for converting light passing through the transmission pattern W into blue light.

[0082] In addition, a partition wall WP may be formed between the first color conversion pattern RQD and the second color conversion pattern GQD, and the partition wall WP may include the same material as the transmissive pattern W.

[0083] The first insulating layer 210 may be disposed on the QD layer. The first insulating layer 210 may cover the color filter layer. For example, the first insulating layer 210 may include a silicon nitride (SiN x ) of inorganic insulating materials.

[0084] A color filter layer may be disposed on the first insulating layer 210. The color filter layer may include a first color filter RCF, a second color filter GCF, and a third color filter BCF.

[0085] The first color filter RCF may be disposed in the first sub-pixel region. The first color filter RCF may be a red color filter. The first color filter RCF may allow only light of a wavelength band corresponding to red light that passes through the first color filter RCF to pass therethrough.

[0086] The second color filter GCF may be disposed in the second sub-pixel region. The second color filter GCF may be a green color filter. The second color filter GCF may allow only light of a wavelength band corresponding to green light that passes through the second color filter GCF to pass therethrough.

[0087] The third color filter BCF may be disposed in the third sub-pixel region. The third color filter BCF may be a blue color filter. The third color filter BCF may allow only light of a wavelength band corresponding to blue light that passes through the third color filter BCF to pass therethrough.

[0088] The light blocking pattern BM may be disposed on the first insulating layer 210. The light blocking pattern BM may include a material that blocks light. For example, the light blocking pattern BM may include an organic material that absorbs light. The light blocking pattern BM may be disposed between the first to third sub-pixel regions to divide the sub-pixel regions.

[0089] The opposite substrate 200 may be disposed on the color filter layer and the light blocking pattern BM. The opposite substrate 200 may include a transparent insulating substrate. For example, the opposite substrate 200 may be configured as a glass substrate, a quartz substrate, a transparent resin substrate, etc.

[0090] Figure 3 2 is a cross-sectional view showing first to third sub-pixels of a display device according to an embodiment.

[0091] Reference Figure 3 , except for the position of the red color filter layer RCFL, the display device is Figure 2 The display devices of FIG. 1 and FIG. 2 are substantially the same. Therefore, a redundant description thereof will be omitted.

[0092] The display device may include a base substrate 100, a first buffer layer 110, a lower shielding electrode, a second buffer layer 120, an active pattern layer, a gate insulating layer 130, a gate pattern, an interlayer insulating layer 140, a source / drain pattern, a through-hole insulating layer 150, a red color filter layer RCFL, a pixel electrode layer, a pixel defining layer PDL, a blue light emitting layer 180, a counter electrode CE, a thin film encapsulation layer TFE, an adhesive layer 230, a second insulating layer 220, a QD layer, a first insulating layer 210, a color filter layer, a light blocking pattern BM and a relative substrate 200.

[0093] The lower shielding electrode may include a first lower shielding electrode BML1, a second lower shielding electrode BML2, and a third lower shielding electrode BML3. The active pattern layer may include a first active pattern ACT1 of a first thin film transistor TFT1, a second active pattern ACT2 of a second thin film transistor TFT2, and a third active pattern ACT3 of a third thin film transistor TFT3. The gate pattern may include a first gate electrode GE1, a second gate electrode GE2, and a third gate electrode GE3. The source / drain pattern may include a first source electrode SE1, a first drain electrode DE1, a second source electrode SE2, a second drain electrode DE2, a third source electrode SE3, and a third drain electrode DE3. The pixel electrode layer may include a first pixel electrode PE1, a second pixel electrode PE2, and a third pixel electrode PE3. The QD layer may include a first color conversion pattern RQD, a second color conversion pattern GQD, a partition wall WP, and a transmissive pattern W. The color filter layer may include a first color filter RCF, a second color filter GCF, and a third color filter BCF.

[0094] The via hole insulating layer 150 may be disposed on the interlayer insulating layer 140 on which the source / drain patterns are disposed. The red color filter layer RCFL may be disposed on the via hole insulating layer 150. The pixel electrode layer may be disposed on the red color filter layer RCFL.

[0095] Figure 4 2 is a cross-sectional view showing first to third sub-pixels of a display device according to an embodiment.

[0096] Reference Figure 4 , except that the red color filter layer RCFL replaces the through-hole insulating layer so that the through-hole insulating layer is omitted, the display device is similar to Figure 2 The display devices of FIG. 1 and FIG. 2 are substantially the same. Therefore, a redundant description thereof will be omitted.

[0097] The display device may include a base substrate 100, a first buffer layer 110, a lower shielding electrode, a second buffer layer 120, an active pattern layer, a gate insulating layer 130, a gate pattern, an interlayer insulating layer 140, a source / drain pattern, a red color filter layer RCFL, a pixel electrode layer, a pixel defining layer PDL, a blue light emitting layer 180, a counter electrode CE, a thin film encapsulation layer TFE, an adhesive layer 230, a second insulating layer 220, a QD layer, a first insulating layer 210, a color filter layer, a light blocking pattern BM and a relative substrate 200.

[0098] The red color filter layer RCFL may be disposed on the interlayer insulating layer 140 on which the source / drain pattern is disposed. The red color filter layer RCFL may have a sufficient thickness to serve as a through-hole insulating layer. Therefore, the red color filter layer RCFL may fully cover the source / drain pattern and may have a substantially flat top surface without generating a step around the source / drain pattern.

[0099] The pixel electrode layer may be disposed on the red color filter layer RCFL. The pixel electrode layer may be electrically connected to the source / drain pattern through a contact hole formed through the red color filter layer RCFL.

[0100] Figure 5 2 is a cross-sectional view showing first to third sub-pixels of a display device according to an embodiment.

[0101] Reference Figure 5 , except that the red color filter layer is omitted and the pixel defining layer is changed to a red pixel defining layer RPDL, the display device is similar to Figure 2 The display devices of FIG. 1 and FIG. 2 are substantially the same. Therefore, a redundant description thereof will be omitted.

[0102] The display device may include a base substrate 100, a first buffer layer 110, a lower shielding electrode, a second buffer layer 120, an active pattern layer, a gate insulating layer 130, a gate pattern, an interlayer insulating layer 140, a source / drain pattern, a through-hole insulating layer 150, a pixel electrode layer, a red pixel defining layer RPDL, a blue light emitting layer 180, a counter electrode CE, a thin film encapsulation layer TFE, an adhesive layer 230, a second insulating layer 220, a QD layer, a first insulating layer 210, a color filter layer, a light blocking pattern BM and a relative substrate 200.

[0103] The pixel electrode layer may include first, second, and third pixel electrodes PE1, PE2, and PE3. The first, second, and third pixel electrodes PE1, PE2, and PE3 may be electrically connected to first, second, and third thin film transistors TFT1, TFT2, and TFT3 through contact holes formed through the through-hole insulating layer 150, respectively.

[0104] The red pixel defining layer RPDL may be disposed on the through-hole insulating layer 150 on which the pixel electrode layer is disposed. The red pixel defining layer RPDL may be a red color filter that may allow passing light of a wavelength band corresponding to red light to pass therethrough and may block blue light. The red pixel defining layer RPDL may have openings that partially expose the first pixel electrode PE1, the second pixel electrode PE2, and the third pixel electrode PE3, respectively.

[0105] In this case, the red pixel defining layer RPDL may overlap the first, second, and third thin film transistors TFT1, TFT2, and TFT3. Therefore, the blue light generated from the blue light emitting layer 180 may be prevented from affecting the first, second, and third thin film transistors TFT1, TFT2, and TFT3.

[0106] Figure 6 is a block diagram showing an electronic device according to an embodiment, Figure 7a It shows that Figure 6 The electronic device is implemented as an example of a television, and Figure 7b It shows that Figure 6 The electronic device is implemented as an example of a smart phone.

[0107] Reference Figure 6 to Figure 7b , the electronic device 500 may include a processor 510, a memory device 520, a storage device 530, an input / output (I / O) device 540, a power supply 550, and a display device 560. Here, the display device 560 may be Figure 1 In addition, the electronic device 500 may also include a plurality of ports for communicating with a video card, a sound card, a memory card, a universal serial bus (USB) device, other electronic devices, etc. In an embodiment, as Figure 7a As shown in , the electronic device 500 can be implemented as a television. In another embodiment, as Figure 7b As shown in , the electronic device 500 may be implemented as a smart phone. However, the electronic device 500 is not limited thereto. For example, the electronic device 500 may be implemented as a cellular phone, a video phone, a smart tablet, a smart watch, a tablet PC, a car navigation system, a computer monitor, a laptop computer, a head mounted display (HMD) device, etc.

[0108] The processor 510 may perform various computing functions. The processor 510 may be a microprocessor, a central processing unit (CPU), an application processor (AP), etc. The processor 510 may be coupled to other components via an address bus, a control bus, a data bus, etc. In addition, the processor 510 may be coupled to an expansion bus such as a peripheral component interconnect (PCI) bus. The memory device 520 may store data for the operation of the electronic device 500. For example, the memory device 520 may include at least one non-volatile memory device (such as an erasable programmable read-only memory (EPROM) device, an electrically erasable programmable read-only memory (EEPROM) device, a flash memory device, a phase change random access memory (PRAM) device, a resistive random access memory (RRAM) device, a nano-floating gate memory (NFGM) device, a polymer random access memory (PoRAM) device, a magnetic random access memory (MRAM) device, a ferroelectric random access memory (FRAM) device, etc.) and / or at least one volatile memory device (such as a dynamic random access memory (DRAM) device, a static random access memory (SRAM) device, a mobile DRAM device, etc.). The storage device 530 may include a solid state drive (SSD) device, a hard disk drive (HDD) device, a CD-ROM device, etc. The I / O device 540 may include an input device (such as a keyboard, a keypad, a mouse device, a touch pad, a touch screen, etc.) and an output device (such as a printer, a speaker, etc.). The power supply 550 may provide power for the operation of the electronic device 500.

[0109] The display device 560 may be coupled to other components via a bus or other communication link. In some embodiments, the display device 560 may be included in the I / O device 540. As described above, the display device 560 may include a thin film transistor including an oxide semiconductor, a blue light emitting layer, a color conversion pattern, and a red color filter layer. The display device includes a color conversion structure such as a quantum dot to improve color reproducibility, so that the display quality can be improved, and the red color filter layer can prevent the blue light generated from the blue light emitting layer from affecting the thin film transistor including the oxide semiconductor. Therefore, the display quality can be improved. Since these are described above, the repeated description related thereto will not be repeated.

[0110] [Industrial Applicability]

[0111] The inventive concept can be applied to a display device and an electronic device including the display device. For example, the inventive concept can be applied to a smart phone, a cellular phone, a video phone, a smart tablet, a smart watch, a tablet PC, a car navigation system, a television, a computer monitor, a laptop computer, a head mounted display (HMD) device, etc.

[0112] The foregoing is an illustration of the embodiments and should not be construed as limiting them. Although some embodiments have been described, it will be readily appreciated by those skilled in the art that many modifications in the embodiments are possible without substantially departing from the novel teachings and advantages of the inventive concept. Therefore, all such modifications are intended to be included within the scope of the inventive concept as defined in the claims. Therefore, it should be understood that the foregoing is an illustration of various embodiments and should not be construed as being limited to the specific embodiments disclosed, and modifications to the disclosed embodiments and other embodiments are intended to be included within the scope of the claims.

[0113] [Description of Reference Numerals]

[0114] 100: Base

[0115] 110: First buffer layer

[0116] 120: Second buffer layer

[0117] 130: Gate insulation layer

[0118] 140: Interlayer insulation layer

[0119] 150: Through hole insulation layer

[0120] 180: Blue light emitting layer

[0121] 200: Relative base

[0122] 210: First insulation layer

[0123] 220: Second insulation layer

[0124] 230: Adhesive layer

[0125] TFT1, TFT2, TFT3: first thin film transistor, second thin film transistor and third thin film transistor

[0126] RCFL: Red Color Filter Layer

[0127] PDL: Pixel Defining Layer

[0128] PE1, PE2, PE3: first pixel electrode, second pixel electrode and third pixel electrode

[0129] CE: Counter Electrode

[0130] TFE: Thin Film Encapsulation Layer

[0131] RQD, GQD: first color conversion pattern and second color conversion pattern

[0132] W: Transmission pattern

[0133] BM: light blocking pattern

[0134] RCF, GCF, BCF: first color filter, second color filter, and third color filter

Claims

1. A display device, comprising: A base substrate, comprising a first sub-pixel region, a second sub-pixel region and a third sub-pixel region; First to third thin film transistors are disposed on the base substrate and respectively include first to third active patterns; First to third pixel electrodes are electrically connected to the first to third thin film transistors, respectively, and are disposed in the first to third sub-pixel regions, respectively; A blue light emitting layer, disposed on the first pixel electrode to the third pixel electrode and configured to emit blue light; a first color conversion pattern, disposed in the first sub-pixel region on the blue light emitting layer; a second color conversion pattern, disposed in the second sub-pixel region on the blue light emitting layer; a red color filter layer, disposed between the blue light emitting layer and the first to third active patterns; as well as a pixel defining layer disposed between the blue light emitting layer and the red color filter layer and having openings partially exposing the first pixel electrode to the third pixel electrode to define first emission regions to third emission regions, respectively; Wherein, in a plan view, the red color filter layer overlaps with the first to third emission regions.

2. The display device according to claim 1, wherein: The first color conversion pattern includes at least one selected from red quantum dot particles and red phosphors, and the second color conversion pattern includes at least one selected from green quantum dot particles and green phosphors.

3. The display device according to claim 2, further comprising: a first color filter, disposed on the first color conversion pattern; as well as The second color filter is disposed on the second color conversion pattern.

4. The display device according to claim 3, wherein: The first color filter and the red color filter layer include the same material.

5. The display device according to claim 3, further comprising: a transmissive pattern, disposed on the blue light emitting layer in the third sub-pixel region; a third color filter, disposed on the transmissive pattern; an opposite substrate, facing the base substrate; a first insulating layer disposed between the relative substrate and the first color conversion pattern, between the relative substrate and the second color conversion pattern, and between the relative substrate and the transmission pattern, the first insulating layer comprising an inorganic insulating material; as well as A second insulating layer is disposed between the blue light emitting layer and the first color conversion pattern, between the blue light emitting layer and the second color conversion pattern, and between the blue light emitting layer and the transmission pattern, and the second insulating layer includes an inorganic insulating material.

6. The display device according to claim 5, further comprising: A counter electrode, disposed on the blue light-emitting layer; A thin film encapsulation layer is disposed on the counter electrode; as well as An adhesive layer is disposed between the thin film encapsulation layer and the second insulating layer.

7. The display device according to claim 1, wherein: The blue light emitting layer is commonly formed in the first to third sub-pixel regions.

8. The display device according to claim 1, further comprising: a through hole insulating layer, disposed between the red color filter layer and the first to third pixel electrodes, and comprising an organic material, The first pixel electrode to the third pixel electrode are electrically connected to the first thin film transistor to the third thin film transistor through contact holes formed through the through-hole insulating layer and the red color filter layer, respectively.

9. The display device according to claim 1, further comprising: a through hole insulating layer, disposed between the red color filter layer and the first to third thin film transistors, and comprising an organic material, The first pixel electrode to the third pixel electrode are respectively electrically connected to the first thin film transistor to the third thin film transistor through contact holes formed through the red color filter layer and the through-hole insulating layer.

10. The display device according to claim 1, wherein: The red color filter layer is disposed between the first to third pixel electrodes and the first to third thin film transistors and has a flat top surface, and The first pixel electrode to the third pixel electrode are respectively electrically connected to the first thin film transistor to the third thin film transistor through contact holes formed through the red color filter layer.

11. A display device, comprising: A base substrate, comprising a first sub-pixel region, a second sub-pixel region and a third sub-pixel region; First to third thin film transistors are disposed on the base substrate and respectively include first to third active patterns; First to third pixel electrodes are electrically connected to the first to third thin film transistors, respectively, and are disposed in the first to third sub-pixel regions, respectively; A blue light emitting layer, disposed on the first pixel electrode to the third pixel electrode and configured to emit blue light; a first color conversion pattern, disposed in the first sub-pixel region on the blue light emitting layer; a second color conversion pattern, disposed in the second sub-pixel region on the blue light emitting layer; a through hole insulating layer, disposed between the first pixel electrode to the third pixel electrode and the first thin film transistor to the third thin film transistor, and comprising an organic material; A red color filter layer is disposed between the blue light emitting layer and the through-hole insulating layer and has openings partially exposing the first pixel electrode to the third pixel electrode to define first emission regions to third emission regions, respectively.

12. The display device according to claim 11, wherein: The first to third pixel electrodes are electrically connected to the first to third thin film transistors through contact holes formed through the through-hole insulating layer, respectively.

13. The display device according to claim 1 or 11, wherein: The red color filter layer overlaps the first to third thin film transistors.

14. The display device according to claim 1 or 11, wherein: The first to third active patterns include an oxide semiconductor.

15. The display device according to claim 14, wherein: The first to third thin film transistors further include first to third gate electrodes, first to third source electrodes, and first to third drain electrodes, respectively. Wherein, the display device further includes: a gate insulating layer disposed between the first to third active patterns and the first to third gate electrodes; and an interlayer insulating layer disposed on the gate insulating layer on which the first gate electrode to the third gate electrode are disposed, and Wherein, the first to third active patterns are arranged between the gate insulating layer and the base substrate.

16. The display device according to claim 15, further comprising: The first to third lower shielding electrodes are respectively disposed between the base substrate and the first to third active patterns.

17. A display device, comprising: A first sub-pixel is configured to emit red light; a second sub-pixel configured to emit green light; as well as The third sub-pixel is configured to emit blue light, The first sub-pixel includes a first thin film transistor, a first blue light-emitting layer, and a red conversion pattern disposed on the first blue light-emitting layer. The second sub-pixel includes a second thin film transistor, a second blue light emitting layer, and a green conversion pattern disposed on the second blue light emitting layer. The third sub-pixel includes a third thin film transistor and a third blue light emitting layer. The display device further includes a red color filter layer and a pixel defining layer, the red color filter layer is arranged between the first thin film transistor and the first blue light-emitting layer, between the second thin film transistor and the second blue light-emitting layer, and between the third thin film transistor and the third blue light-emitting layer, the pixel defining layer is arranged on the red color filter layer and includes openings to respectively define the first emission area to the third emission area, and Wherein, in a plan view, the red color filter layer overlaps with the first to third emission regions.

18. The display device according to claim 17, wherein: The first to third thin film transistors include oxide semiconductors.

19. The display device according to claim 18, wherein: The red conversion pattern includes at least one selected from red quantum dot particles and red phosphors, and Wherein, the green conversion pattern includes at least one selected from green quantum dot particles and green phosphors.

20. The display device according to claim 19, wherein: The first to third blue light emitting layers of the first to third sub-pixels are commonly formed and connected to each other.

21. The display device according to claim 17, wherein: The red color filter layer overlaps the first to third thin film transistors.

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