Substrate processing device and substrate processing method

Abstract

The present invention provides a substrate processing device and a substrate processing method. A technology is provided that can suppress the deterioration of the performance of liquid processing after a substrate processing part is cleaned. A substrate processing device in one form of the present disclosure includes a substrate processing part, a drain part, and a control part. The substrate processing part supplies processing liquid from a processing liquid supply part to a substrate placed thereon to perform liquid processing. The drain part has a recovery path connected to a storage part that accumulates the processing liquid, and drains the processing liquid after the liquid processing. The control part executes a processing process for liquid processing and a cleaning process for cleaning the substrate processing part and the drain part. In addition, as a cleaning process, the control part executes a recovery action for supplying processing liquid from the processing liquid supply part to replace the cleaning liquid attached to the substrate processing part and the drain part with processing liquid after performing a cleaning action of cleaning the substrate processing part and the drain part by supplying cleaning liquid from the cleaning liquid supply part.

Description

Technical Field

[0001] The disclosed embodiments relate to a substrate processing apparatus and a substrate processing method. Background Art

[0002] Conventionally, there is known a technique for liquid processing a substrate such as a semiconductor wafer (hereinafter also referred to as a wafer) using BHF (buffered hydrofluoric acid) in a single-sheet substrate processing unit (see Patent Document 1).

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2014-41994 Summary of the Invention

[0006] Problems to be solved by the invention

[0007] The present disclosure provides a technology capable of suppressing deterioration in performance of liquid processing after a substrate processing unit is cleaned.

[0008] Solutions for solving problems

[0009] A substrate processing device according to one form of the present disclosure includes a substrate processing unit, a drain unit, and a control unit. The substrate processing unit supplies a processing liquid from a processing liquid supply unit to a substrate placed thereon to perform liquid processing. The drain unit has a recovery path connected to a storage unit that accumulates the processing liquid, and drains the processing liquid after use in the liquid processing. The control unit executes a processing process for the liquid processing and a cleaning process for cleaning the substrate processing unit and the drain unit. In addition, as the cleaning process, the control unit executes a recovery action for supplying the processing liquid from the processing liquid supply unit to replace the cleaning liquid attached to the substrate processing unit and the drain unit with the processing liquid after performing a cleaning action of cleaning the substrate processing unit and the drain unit by supplying the cleaning liquid from the cleaning liquid supply unit.

[0010] Effects of the Invention

[0011] According to the present disclosure, it is possible to suppress deterioration in performance of liquid processing after a substrate processing unit is cleaned. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a schematic diagram showing a schematic configuration of a substrate processing system according to an embodiment.

[0013] Figure 2 It is a schematic diagram showing a configuration example of a processing unit according to an embodiment.

[0014] Figure 3 It is a schematic diagram showing the piping structure of the substrate processing system according to the embodiment.

[0015] Figure 4 It is a schematic diagram showing the piping structure of the reservoir according to the embodiment.

[0016] Figure 5 It is a diagram for explaining the flow of processing in the substrate processing system according to the embodiment.

[0017] Figure 6A This is a diagram (part 1) showing an operation example of the cleaning operation and the recovery operation according to the embodiment.

[0018] Figure 6B This is a diagram (part 2) showing an example of the cleaning operation and the recovery operation according to the embodiment.

[0019] Figure 6C This is a diagram (part 3) showing an example of the cleaning operation and the recovery operation according to the embodiment.

[0020] Figure 6D This is a diagram (part 4) showing an example of the cleaning operation and the recovery operation according to the embodiment.

[0021] Figure 6E This is a diagram (No. 5) showing an example of the cleaning operation and the recovery operation according to the embodiment.

[0022] Figure 6F FIG. 6 is a diagram showing an example of the cleaning operation and the recovery operation according to the embodiment.

[0023] Figure 6G FIG. 7 is a diagram showing an example of the cleaning operation and the recovery operation according to the embodiment.

[0024] Figure 7 This is a diagram showing the relationship between the recovery operation time and the amount of change in etching rate in the subsequent processing steps according to the embodiment.

[0025] Figure 8 It is a diagram for explaining the flow of processing in the substrate processing system according to Modification 1 of the embodiment.

[0026] Figure 9 It is a diagram for explaining the flow of processing in the substrate processing system according to Modification 2 of the embodiment.

[0027] Figure 10 This is a flowchart showing the procedure of substrate processing performed by the substrate processing system according to the embodiment.

[0028] Description of Reference Numerals

[0029] W, wafer (an example of a substrate); 1, substrate processing system (an example of a substrate processing apparatus); 16, processing unit; 18, control unit; 30, substrate processing unit; 41a~41c, nozzle (an example of a processing liquid supply unit); 50, drainage unit; 59a~59c, drainage path; 62a~62c, concentration sensor; 64a~64c, recovery path; 65a~65c, standby unit; 70a~70c, storage unit; S1, S1a, S1b, processing process; S2, cleaning process; S3, cleaning action; S4, recovery action; S5, gas purge action. DETAILED DESCRIPTION

[0030] The following describes in detail embodiments of the substrate processing apparatus and substrate processing method disclosed in this application with reference to the accompanying drawings. The present disclosure is not limited to the embodiments shown below. It should be noted that the accompanying drawings are schematic and may differ from actual dimensions and proportions of various elements. Furthermore, the accompanying drawings may also include portions with different dimensions and proportions.

[0031] Conventionally, there is a known technique for liquid processing substrates such as semiconductor wafers (hereinafter referred to as wafers) using BHF (buffered hydrofluoric acid) in a single-sheet substrate processing unit. BHF is a mixture of HF (hydrofluoric acid) and NH4F (ammonium fluoride).

[0032] During liquid processing using BHF, the following problem sometimes occurs: BHF that scatters and adheres to the substrate processing area during liquid processing crystallizes, and these crystals adhere to the wafer as particles. Therefore, the crystallized BHF is regularly cleaned with a cleaning solution such as DIW (deionized water) to prevent BHF particles from adhering to the wafer.

[0033] Furthermore, since BHF is a relatively expensive chemical solution, there are cases where BHF once used for liquid treatment is recovered from a liquid discharge portion to a reservoir portion and the used BHF is reused for liquid treatment.

[0034] However, since the cleaning liquid (DIW) remains in the substrate processing unit and the liquid drain unit after the cleaning process, the concentration of BHF may decrease when BHF is recovered together with the DIW into the reservoir. Furthermore, when the BHF concentration decreases, the performance of the liquid processing performed by BHF may deteriorate.

[0035] Therefore, a technology that can overcome the above-mentioned problems and suppress the deterioration of the performance of liquid processing after the substrate processing unit is cleaned is desired.

[0036] <Substrate Processing System Overview>

[0037] Initially, while referring to Figure 1 , while describing the schematic structure of the substrate processing system 1 according to the embodiment. Figure 1 This diagram schematically illustrates the structure of a substrate processing system 1 according to an embodiment. Furthermore, substrate processing system 1 is an example of a substrate processing apparatus. Below, to clarify positional relationships, mutually orthogonal X-axis, Y-axis, and Z-axis are defined, with the positive Z-axis direction being vertically upward.

[0038] like Figure 1 As shown, the substrate processing system 1 includes a loading and unloading station 2 and a processing station 3. The loading and unloading station 2 and the processing station 3 are provided adjacent to each other.

[0039] The loading and unloading station 2 includes a carrier placement unit 11 and a conveying unit 12. The carrier placement unit 11 places a plurality of carriers C for horizontally accommodating a plurality of substrates, in the embodiment, semiconductor wafers W (hereinafter referred to as wafers W).

[0040] The conveyor unit 12 is disposed adjacent to the carrier placement unit 11 and includes a substrate conveyor device 13 and a delivery unit 14 therein. The substrate conveyor device 13 includes a wafer holding mechanism for holding a wafer W. The substrate conveyor device 13 is movable horizontally and vertically, and is rotatable about a vertical axis. The substrate conveyor device 13 uses the wafer holding mechanism to convey wafers W between the carrier C and the delivery unit 14.

[0041] The processing station 3 is provided adjacent to the conveyor 12. The processing station 3 includes a conveyor 15 and a plurality of processing units 16. The plurality of processing units 16 are arranged on both sides of the conveyor 15.

[0042] The conveying section 15 is internally provided with a substrate conveying device 17. The substrate conveying device 17 includes a wafer holding mechanism for holding the wafer W. The substrate conveying device 17 is movable in the horizontal and vertical directions and rotatable about a vertical axis. The substrate conveying device 17 uses the wafer holding mechanism to convey the wafer W between the delivery section 14 and the processing unit 16.

[0043] The processing unit 16 performs predetermined substrate processing on the wafer W conveyed by the substrate conveying device 17 .

[0044] The substrate processing system 1 also includes a control device 4. The control device 4 is, for example, a computer and includes a control unit 18 and a storage unit 19. The storage unit 19 stores programs for controlling various processes to be performed in the substrate processing system 1. The control unit 18 controls the operation of the substrate processing system 1 by reading and executing the programs stored in the storage unit 19.

[0045] The program may be recorded on a computer-readable storage medium or installed from the storage medium into the storage unit 19 of the control device 4. Examples of computer-readable storage media include a hard disk (HD), a floppy disk (FD), a compact disk (CD), a magneto-optical disk (MO), and a memory card.

[0046] In the substrate processing system 1 configured as described above, the substrate conveyor 13 of the transport station 2 first removes a wafer W from the carrier C placed on the carrier placement portion 11 and places the removed wafer W on the delivery portion 14. The wafer W placed on the delivery portion 14 is then removed from the delivery portion 14 by the substrate conveyor 17 of the processing station 3 and transported to the processing unit 16.

[0047] After wafers W are fed into processing unit 16 and processed in processing unit 16, they are transferred from processing unit 16 by substrate transfer device 17 and placed on interface 14. The processed wafers W placed on interface 14 are then returned to carrier C on carrier placement unit 11 by substrate transfer device 13.

[0048] <Structure of processing unit>

[0049] Next, refer to Figure 2 The structure of the processing unit 16 will be described. Figure 2 1 is a schematic diagram showing a specific structural example of the processing unit 16. Figure 2 As shown, the processing unit 16 includes a chamber 20 , a substrate processing portion 30 , a liquid supply portion 40 , and a liquid drain portion 50 .

[0050] The chamber 20 houses at least a portion of the substrate processing unit 30 , the liquid supply unit 40 , and the liquid drain unit 50 . A fan filter unit (FFU) 21 is provided at the top of the chamber 20 . The FFU 21 creates a downward flow in the chamber 20 .

[0051] The FFU 21 is connected to a downflow gas supply source 23 via a valve 22 . The FFU 21 discharges a downflow gas (eg, dry air) supplied from the downflow gas supply source 23 into the chamber 20 .

[0052] The substrate processing unit 30 includes a rotating holding unit 31, a support unit 32, and a drive unit 33, and performs liquid processing on a mounted wafer W. The rotating holding unit 31 is located approximately in the center of the chamber 20. A holding member 31 a is provided on the upper surface of the rotating holding unit 31 to hold the wafer W from the side. The holding member 31 a holds the wafer W horizontally, slightly spaced from the upper surface of the rotating holding unit 31.

[0053] The support portion 32 is a member extending in the vertical direction, and its base end is rotatably supported by a driving portion 33. The distal end horizontally supports the rotation holding portion 31. The driving portion 33 rotates the support portion 32 about the vertical axis.

[0054] The substrate processing unit 30 rotates the support column 32 using the driving unit 33 , thereby rotating the rotation holding unit 31 supported by the support column 32 , thereby rotating the wafer W held by the rotation holding unit 31 .

[0055] The liquid supply unit 40 includes a first liquid supply unit 40a and a second liquid supply unit 40b. The first liquid supply unit 40a supplies various processing liquids to the wafer W held in the substrate processing unit 30. The first liquid supply unit 40a includes nozzles 41a to 41c, an arm 42a that horizontally supports the nozzles 41a to 41c, and a rotation and lifting mechanism 43a that rotates and lifts the arm 42a.

[0056] Nozzles 41a to 41c are examples of a processing liquid supply unit. Nozzle 41a discharges a first BHF having a first hydrofluoric acid concentration onto the surface of wafer W. Nozzle 41b discharges a second BHF having a second hydrofluoric acid concentration onto the surface of wafer W.

[0057] The nozzle 41c discharges a third BHF having a third hydrofluoric acid concentration onto the surface of the wafer W. The first to third BHF are examples of processing liquids. The piping structure of the substrate processing system 1 including the nozzles 41a to 41c will be described later.

[0058] The second liquid supply unit 40b supplies DIW to the wafer W held by the substrate processing unit 30. The second liquid supply unit 40b includes a nozzle 41d, an arm 42b that horizontally supports the nozzle 41d, and a rotating and lifting mechanism 43b that rotates and lifts the arm 42b.

[0059] DIW supplied through a DIW supply path (not shown) is ejected from the nozzle 41 d toward the surface of the wafer W. DIW is an example of cleaning liquid, and the nozzle 41 d is an example of a cleaning liquid supply unit.

[0060] A first rotating cup 34 and a second rotating cup 35 are provided on the periphery of the rotating holding portion 31 so as to rotate integrally with the rotating holding portion 31. Figure 2 As shown, the second rotation cup 35 is arranged inside the first rotation cup 34 .

[0061] The first and second rotating cups 34 and 35 are formed in an annular shape as a whole. When the first and second rotating cups 34 and 35 rotate together with the rotating holding unit 31 , the first and second rotating cups 34 and 35 guide the processing liquid scattered from the rotating wafer W to the drain unit 50 .

[0062] The drain unit 50 includes a first cup 50a, a second cup 50b, a third cup 50c, and an anti-fog cover 50e in order from the inner side close to the rotation center of the wafer W held and rotated by the rotation holding unit 31. In addition, the drain unit 50 also includes a bottom 53, an inner wall portion 54d, drain paths 59a to 59c, and recovery paths 64a to 64c (see Figure 3 ).

[0063] The inner wall portion 54 d is disposed on the inner circumference of the first cup 50 a and is a cylindrical member centered at the rotation center of the wafer W. The first to third cups 50 a to 50 c , the anti-fog cover 50 e , and the inner wall portion 54 d are provided on the bottom portion 53 of the drain unit 50 .

[0064] The first cup 50a includes a first peripheral wall portion 54a and a first liquid receiving portion 55a. The first peripheral wall portion 54a is erected from the bottom portion 53 and is formed in a tubular shape (e.g., cylindrical). A space is formed between the first peripheral wall portion 54a and the inner wall portion 54d. This space serves as a first drain trough 58a for recovering and draining the treatment liquid, etc. The first liquid receiving portion 55a is provided above the upper surface 54a1 of the first peripheral wall portion 54a.

[0065] Furthermore, the first cup 50a includes a first lifting mechanism 56, and the first liquid receiving portion 55a is configured to be able to be lifted and lowered by the first lifting mechanism 56. Specifically, the first lifting mechanism 56 includes a first support member 56a and a first lifting drive unit 56b.

[0066] The first supporting member 56a is a plurality of (for example, three) Figure 2 The first supporting member 56a is a longitudinal member (only one of which is shown in the figure). The first supporting member 56a is movably inserted into the through hole formed in the first peripheral wall portion 54a. In addition, as the first supporting member 56a, a cylindrical rod can be used, for example, but is not limited to this.

[0067] The first supporting member 56a is positioned so that its upper end is exposed from the upper surface 54a1 of the first peripheral wall portion 54a, and is connected to the lower surface of the first liquid receiving portion 55a to support the first liquid receiving portion 55a from below. On the other hand, the first lifting drive portion 56b is connected to the lower end of the first supporting member 56a.

[0068] The first lifting drive unit 56b lifts the first support member 56a, for example, in the Z-axis direction, thereby causing the first support member 56a to lift the first liquid receiving portion 55a relative to the first peripheral wall portion 54a. Alternatively, an air cylinder may be used as the first lifting drive unit 56b. The first lifting drive unit 56b is controlled by the control device 4.

[0069] The first liquid receiving portion 55 a driven by the first lifting drive unit 56 b moves between a processing position for receiving the processing liquid scattered from the rotating wafer W and a retreat position for retreating downward from the processing position.

[0070] Specifically, when the first liquid receiving portion 55a is located at the processing position, an opening is formed inside the upper end of the first liquid receiving portion 55a, and a flow path is formed from the opening to the first liquid drain groove 58a.

[0071] On the other hand, Figure 2 As shown, the inner wall portion 54d includes an extended portion 54d1 extending in an inclined manner toward the peripheral edge of the rotation holding portion 31. When the first liquid receiving portion 55a is in the retracted position, it abuts against the extended portion 54d1 of the inner wall portion 54d, closing the opening on the inner side of the upper end and blocking the flow path to the first liquid drain groove 58a.

[0072] The second cup 50b has the same structure as the first cup 50a. Specifically, the second cup 50b includes a second peripheral wall 54b, a second liquid receiving portion 55b, and a second lifting mechanism 57. The second cup 50b is disposed adjacent to the first cup 50a on the first peripheral wall 54a side of the first cup 50a.

[0073] The second peripheral wall portion 54b is formed in a cylindrical shape and stands upright on the outer peripheral side of the first peripheral wall portion 54a at the bottom 53. The space formed between the second peripheral wall portion 54b and the first peripheral wall portion 54a is used as a second drain groove 58b for collecting and draining the processing liquid.

[0074] The second liquid receiving portion 55b is located on the outer peripheral side of the first liquid receiving portion 55a and is provided above the upper surface 54b1 of the second peripheral wall portion 54b.

[0075] The second lifting mechanism 57 includes a second supporting member 57a and a second lifting drive unit 57b. The second supporting member 57a is a plurality of (for example, three). Figure 2 The second supporting member 57a is a longitudinal member (only one of which is shown in the figure) that is inserted into the through hole formed in the second peripheral wall portion 54b in a movable manner. In addition, as the second supporting member 57a, a cylindrical rod, for example, can be used, but is not limited to this.

[0076] The second supporting member 57a is positioned so that its upper end is exposed from the upper surface 54b1 of the second peripheral wall portion 54b, and is connected to the lower surface of the second liquid receiving portion 55b to support the second liquid receiving portion 55b from below. In addition, the upper surface 54b1 of the second peripheral wall portion 54b is positioned so as to be vertically below the upper surface 54a1 of the first peripheral wall portion 54a.

[0077] A second lifting drive unit 57b is connected to the lower end of the second support member 57a. The second lifting drive unit 57b lifts the second support member 57a, for example, in the Z-axis direction. Thus, the second support member 57a lifts the second liquid receiving portion 55b relative to the second peripheral wall portion 54b.

[0078] In addition, as the 2nd lift drive part 57b, an air cylinder can be used. In addition, the 2nd lift drive part 57b is also controlled by the control device 4.

[0079] Furthermore, the second liquid receiving portion 55b also moves between the processing position and the retreat position. Specifically, when the second liquid receiving portion 55b is at the processing position and the first liquid receiving portion 55a is at the retreat position, an opening is formed inside the upper end of the second liquid receiving portion 55b, and a flow path is formed from the opening to the second liquid drain trough 58b.

[0080] On the other hand, Figure 2 As shown, when the second liquid receiving portion 55b is in the retracted position, it abuts against the first liquid receiving portion 55a, the opening on the inner side of the upper end is closed, and the flow path leading to the second liquid drain groove 58b is blocked. In addition, in the above description, the second liquid receiving portion 55b in the retracted position abuts against the first liquid receiving portion 55a, but is not limited to this. For example, it can also abut against the inner wall portion 54d to close the opening on the inner side of the upper end.

[0081] The third cup 50c includes a third peripheral wall 54c and a third liquid receiving portion 55c. The third cup 50c is positioned adjacent to the second cup 50b on the opposite side of the first cup 50a. The third peripheral wall 54c is formed in a cylindrical shape and extends vertically from the bottom 53 outside the second peripheral wall 54b. The space between the third peripheral wall 54c and the second peripheral wall 54b serves as a third drain trough 58c for collecting and draining the process liquid.

[0082] The third liquid receiving portion 55c is formed to be continuous with the upper end of the third peripheral wall portion 54c. The third liquid receiving portion 55c surrounds the wafer W held by the rotation holding portion 31 and extends above the first liquid receiving portion 55a and the second liquid receiving portion 55b.

[0083] like Figure 2 As shown, the third liquid receiving portion 55c forms an opening on the inner side of the upper end of the third liquid receiving portion 55c when the first liquid receiving portion 55a and the second liquid receiving portion 55b are both in the retracted position, and forms a flow path from the opening to the third liquid drain groove 58c.

[0084] On the other hand, when the second liquid receiving part 55b is in the raised position, or when both the first liquid receiving part 55a and the second liquid receiving part 55b are in the raised position, the third liquid receiving part 55c abuts against the second liquid receiving part 55b, the opening on the inner side of the upper end is closed, and the flow path leading to the third liquid drainage groove 58c is closed.

[0085] Drain ports 51 a to 51 c are formed at intervals along the circumferential direction of the drain unit 50 in portions of the bottom 53 corresponding to the first to third cups 50 a to 50 c , more precisely, in portions of the bottom 53 corresponding to the first to third drain grooves 58 a to 58 c .

[0086] The drain port 51a is connected to a drain path 59a, the drain port 51b is connected to a drain path 59b, and the drain port 51c is connected to a drain path 59c. The piping structure of the substrate processing system 1 including the drain paths 59a to 59c will be described later.

[0087] Furthermore, when the substrate processing system 1 processes the substrate, the first liquid receiving portion 55a of the first cup 50a and the second liquid receiving portion 55b of the second cup 50b are raised and lowered according to the type of processing liquid used in each process of the substrate processing, and the liquid discharge ports 51a to 51c are switched.

[0088] For example, when the first BHF is ejected onto the wafer W to process the wafer W, the control device 4 raises the first cup 50a and the second cup 50b. Specifically, the control device 4 raises the first support member 56a and the second support member 57a via the first lift drive unit 56b and the second lift drive unit 57b, thereby raising the first liquid receiving portion 55a to the processing position, thereby forming a flow path from the opening on the inner side of the upper end of the first liquid receiving portion 55a to the first liquid drain trough 58a.

[0089] Thus, the first BHF supplied to the wafer W flows into the first drain groove 58 a.

[0090] Furthermore, for example, when processing the wafer W by ejecting the second BHF onto the wafer W, the control device 4 raises only the second cup 50 b. Specifically, the control device 4 raises the second support member 57 a via the second lift drive 57 b, thereby raising the second liquid receiving portion 55 b to the processing position, thereby forming a flow path from the opening on the inner side of the upper end of the second liquid receiving portion 55 b to the second liquid drain trough 58 b.

[0091] Here, the first cup 50 a is in a lowered state, so that the second BHF supplied to the wafer W flows into the second drain groove 58 b .

[0092] Furthermore, for example, when the third BHF is ejected onto the wafer W to process the wafer W, the control device 4 lowers the first cup 50a and the second cup 50b (see FIG. Figure 2 That is, the control device 4 lowers the first supporting member 56a and the second supporting member 57a by means of the first lifting drive unit 56b and the second lifting drive unit 57b, thereby lowering the first liquid receiving portion 55a and the second liquid receiving portion 55b to the retracted position.

[0093] In this manner, a flow path is formed from the opening inside the upper end of the third liquid receiving portion 55 c to the third drain groove 58 c , so that the third BHF supplied to the wafer W flows into the third drain groove 58 c .

[0094] The anti-fog cover 50e includes an outer cylindrical portion 50e1 and an extension portion 50e2 extending from the upper end of the outer cylindrical portion 50e1 toward the radially inner side of the outer cylindrical portion 54e and extending above the third cup 50c. The anti-fog cover 50e is configured to be movable upward and downward by a lifting mechanism (not shown).

[0095] Control unit 18 (see Figure 1 ) By arranging the anti-mist cover 50e at a higher position, it is possible to prevent the mist of the processing liquid scattered from the rotating wafer W from reaching the side wall of the chamber 20.

[0096] Exhaust ports 52a, 52b, and 52c are formed in the bottom 53, first peripheral wall 54a, and second peripheral wall 54b of the drain portion 50, respectively. Each exhaust port 52a, 52b, and 52c is connected to an exhaust pipe 60, which has a valve 61 inserted therein. The atmosphere within the chamber 20 is exhausted via the exhaust ports 52a, 52b, and 52c and the exhaust pipe 60.

[0097] <Piping structure of substrate processing system>

[0098] Next, refer to Figure 3 and Figure 4 Next, the piping structure of the substrate processing system 1 will be described. Figure 3 It is a schematic diagram showing the piping structure of the substrate processing system 1 according to the embodiment.

[0099] like Figure 3 As shown, the drain port 51a of the processing unit 16 (see Figure 2 The drain path 59a connected to the drain path 59a is connected to the switching valve 63a via a concentration sensor 62a. The concentration sensor 62a can detect the concentration of hydrofluoric acid in the drain flowing in the drain path 59a.

[0100] The switching valve 63a is connected to the drain section DR and the recovery path 64a. The switching valve 63a is configured to switch the pipe connected to the drainage path 59a to the drain section DR or the recovery path 64a. Figure 1 ) By controlling the switching valve 63a, the discharge path of the waste liquid flowing in the waste liquid path 59a can be switched to the discharge portion DR or the recovery path 64a.

[0101] The recovery path 64a is connected to the reservoir 70a where the first BHF is stored. That is, the controller 18 controls the switching valve 63a to connect the drain path 59a and the recovery path 64a, thereby recovering the first BHF after use in the processing unit 16 into the reservoir 70a.

[0102] Furthermore, the reservoir 70a is connected to a supply path 44a, which is connected to the nozzle 41a via a valve 45a and a flow rate regulator 46a. Thus, the controller 18 can cause the first BHF accumulated in the reservoir 70a to be ejected from the nozzle 41a toward the wafer W. The reservoir 70a will be described in detail later.

[0103] A standby unit 65a is provided below the standby position of the nozzle 41a within the chamber 20. During a simulated dispensing process to remove bubbles, foreign matter, and the like from the various flow paths connected to the nozzle 41a, the standby unit 65a receives the first BHF ejected from the nozzle 41a and discharges the received first BHF to the upstream side of the concentration sensor 62a in the discharge path 59a. Specifically, the discharge path of the standby unit 65a is connected to the discharge path 59a.

[0104] In addition, the drain port 51b of the processing unit 16 (see Figure 2 The drain path 59b connected to the drain path 59b is connected to the switching valve 63b via a concentration sensor 62b. The concentration sensor 62b can detect the concentration of hydrofluoric acid in the drain flowing in the drain path 59b.

[0105] The drain section DR and the recovery path 64b are connected to the switching valve 63b. The switching valve 63b is configured to switch the piping connected to the drainage path 59b to the drain section DR or the recovery path 64b. Furthermore, the controller 18 controls the switching valve 63b to switch the discharge path of the waste liquid flowing through the drainage path 59b to the drain section DR or the recovery path 64b.

[0106] In addition, the recovery path 64b is connected to the reservoir 70b where the second BHF is stored. That is, the control unit 18 controls the switching valve 63b to connect the drain path 59b and the recovery path 64b, thereby recovering the second BHF after use in the processing unit 16 into the reservoir 70b.

[0107] Furthermore, the supply path 44b is connected to the reservoir 70b, and the supply path 44b is connected to the nozzle 41b via the valve 45b and the flow rate regulator 46b. Thus, the controller 18 can discharge the second BHF stored in the reservoir 70b from the nozzle 41b toward the wafer W.

[0108] A standby unit 65b is provided below the standby position of the nozzle 41b within the chamber 20. During a simulated dispensing process to remove bubbles, foreign matter, and the like from the various flow paths connected to the nozzle 41b, the standby unit 65b receives the second BHF ejected from the nozzle 41b and discharges the received second BHF to the upstream side of the concentration sensor 62b in the discharge path 59b. Specifically, the discharge path of the standby unit 65b is connected to the discharge path 59b.

[0109] Furthermore, the drain port 51c (see Figure 2 The drain path 59c connected to the drain path 59c is connected to the switching valve 63c via a concentration sensor 62c. The concentration sensor 62c can detect the concentration of hydrofluoric acid in the drain flowing in the drain path 59c.

[0110] The switching valve 63c is connected to the drain section DR and the recovery path 64c. The switching valve 63c is configured to switch the piping connected to the drainage path 59c to the drain section DR or the recovery path 64c. Furthermore, the controller 18 controls the switching valve 63c to switch the discharge path of the waste liquid flowing through the drainage path 59c to the drain section DR or the recovery path 64c.

[0111] The recovery path 64c is connected to the reservoir 70c where the third BHF is stored. That is, the controller 18 controls the switching valve 63c to connect the drain path 59c and the recovery path 64c, thereby recovering the third BHF after use in the processing unit 16 into the reservoir 70c.

[0112] Furthermore, the supply path 44c is connected to the reservoir 70c, and the supply path 44c is connected to the nozzle 41c via the valve 45c and the flow rate regulator 46c. Thus, the controller 18 can discharge the third BHF stored in the reservoir 70c from the nozzle 41c toward the wafer W.

[0113] A standby unit 65c is provided below the standby position of the nozzle 41c within the chamber 20. During a simulated dispensing process to remove bubbles, foreign matter, and the like from the various flow paths connected to the nozzle 41c, the standby unit 65c receives the third BHF ejected from the nozzle 41c and discharges the received third BHF to the upstream side of the concentration sensor 62c in the discharge path 59c. Specifically, the discharge path of the standby unit 65c is connected to the discharge path 59c.

[0114] Figure 4 This is a schematic diagram showing the piping configuration of the storage section 70a according to the embodiment. The piping configurations of the storage section 70b and the storage section 70c are the same as the piping configuration of the storage section 70a described below, and therefore, the descriptions of the piping configurations of the storage section 70b and the storage section 70c are omitted.

[0115] The storage unit 70a includes a BHF supply path 71a, a tank 74a, and a circulation path 75a. The BHF supply path 71a supplies unused first BHF to the tank 74a.

[0116] The BHF supply path 71a includes a BHF supply source 72a and a valve 73a in this order from the upstream side. The BHF supply source 72a is, for example, a tank that stores unused first BHF.

[0117] The tank 74a stores the first BHF supplied from the BHF supply path 71a. The tank 74a also stores the used first BHF recovered via the drain path 59a and the recovery path 64a.

[0118] The circulation path 75a is a circulation path that flows out of the tank 74a and returns to the tank 74a. The circulation path 75a is provided with a pump 76a, a filter 77a, a heater 78a, a valve 79a, a switching valve 80a, a concentration sensor 81a, and a switching valve 82a in this order from the upstream side with respect to the tank 74a.

[0119] The pump 76a forms a circulation flow of the first BHF that flows out of the tank 74a, passes through the circulation path 75a, and returns to the tank 74a. The filter 77a removes contaminants such as particulate matter contained in the first BHF circulating in the circulation path 75a.

[0120] The heater 78a raises the temperature of the first BHF circulating in the circulation path 75a. The concentration sensor 81a can detect the concentration of hydrofluoric acid in the first BHF flowing in the circulation path 75a.

[0121] In addition, the DIW supply source 83a is connected to the upstream side of the switching valve 80a, and the downstream side of the switching valve 82a is connected to the discharge section DR. Figure 1 ) The switching valves 80a and 82a are controlled to connect the DIW supply source 83a to the discharge portion DR via the concentration sensor 81a, thereby enabling the interior of the concentration sensor 81a to be cleaned with DIW.

[0122] Therefore, according to the embodiment, the concentration sensor 81 a can be calibrated by cleaning the inside of the concentration sensor 81 a with DIW.

[0123] Furthermore, the tank 74a is connected to the drain DR via a valve 84a, and the circulation path 75a is connected to the drain DR via a valve 85a. Thus, the controller 18 can control the valves 84a and 85a to discharge the first BHF in the tank 74a and the circulation path 75a to the drain DR when, for example, the first BHF in the tank 74a and the circulation path 75a is replaced.

[0124] The supply path 44a is branched from the portion of the circulation path 75a located between the heater 78a and the valve 79a. The supply path 44a is provided between the circulation path 75a and the nozzle 41a (see FIG. Figure 3 ), the first BHF that has been filtered and temperature-controlled in the circulation path 75a is supplied to the processing unit 16.

[0125] Substrate processing

[0126] Next, refer to Figures 5 to 7 The details of each process in the substrate processing system 1 according to the embodiment will be described. Figure 5 It is a diagram for explaining the flow of processing in the substrate processing system 1 according to the embodiment.

[0127] like Figure 5 As shown, in the substrate processing system 1 of the embodiment, in the processing unit 16 , a liquid process using any one of the first to third BHFs is continuously performed on the wafer W in a processing recipe S1 corresponding to the BHF used.

[0128] In addition, the processing recipe S1 of the embodiment includes the processing order of the wafer W and the type of the processing liquid, which are pre-stored in the storage unit 19 (see Figure 1 That is, a plurality of processing steps S1 are prepared according to different types of BHF. Thus, the processing unit 16 can be used to perform liquid processing optimized for different types of BHF.

[0129] In addition, Figure 5 In the example, the liquid treatment process S1 performed before the target cleaning process S2 is referred to as the treatment process S1a, and the liquid treatment process S1 performed after the target cleaning process S2 is referred to as the treatment process S1b.

[0130] Furthermore, in the substrate processing system 1, a cleaning process S2 is performed between the repeated processing process S1 in the processing unit 16. The cleaning process S2 includes a cleaning operation S3 and a recovery operation S4.

[0131] In cleaning operation S3, DIW is supplied as a cleaning liquid from a cleaning liquid supply unit (e.g., nozzle 41d) to clean the substrate processing unit 30 and the drain unit 50. This removes crystals caused by BHF adhering to the substrate processing unit 30 and the drain unit 50 during the processing step S1a prior to the cleaning operation S3.

[0132] Recovery action S4, for example, supplies BHF (hereinafter also referred to as "BHF of the subsequent process") used in the next processing process S1b from the processing liquid supply part (such as nozzles 41a to nozzles 41c), and replaces DIW attached to the substrate processing part 30 and the drainage part 50 with BHF of the subsequent process.

[0133] That is, in the embodiment, in the recovery operation S4, the DIW remaining in the substrate processing unit 30 and the drain unit 50 after the cleaning operation S3 is pre-cleaned using the BHF of the subsequent process. This can prevent the DIW remaining in the substrate processing unit 30 and the drain unit 50 after the cleaning operation S3 from being collected in the reservoirs 70a to 70c.

[0134] Therefore, according to the embodiment, even when liquid treatment is performed while recovering BHF from the subsequent step in the subsequent treatment process S1b, a decrease in the concentration of the recovered BHF can be suppressed, thereby suppressing deterioration in the performance of the liquid treatment.

[0135] In addition, in the embodiment, the control unit 18 preferably selects the cleaning process S2 based on the treatment process S1. For example, the control unit 18 preferably selects the cleaning process S2 based on the type of BHF used in the treatment process S1.

[0136] Next, refer to Figures 6A to 6G The details of the cleaning operation S3 and the recovery operation S4 will be described. Figures 6A to 6G These are diagrams (No. 1 to No. 7 ) showing operation examples of the cleaning operation and the recovery operation according to the embodiment.

[0137] like Figure 6A As shown, the cleaning operation S3 is, for example, a process of cleaning the rotating holding unit 31, the holding member 31a, the first rotating cup 34, and the second rotating cup 35. In this case, for example, while the rotating holding unit 31 is being rotated, the nozzle 41d is reciprocated between the center and the outer periphery of the rotating holding unit 31 while supplying DIW from the nozzle 41d.

[0138] Thus, crystals adhering to the rotation holding portion 31 , the holding member 31 a disposed on the outer peripheral portion of the rotation holding portion 31 , the first rotation cup 34 , and the second rotation cup 35 can be removed.

[0139] Similarly, the recovery operation S4 is, for example, a process of pre-washing the rotating holding portion 31, the holding member 31a, the first rotating cup 34, and the second rotating cup 35 using the BHF of the subsequent process. In this case, for example, while the rotating holding portion 31 is being rotated, the nozzles 41a to 41c (see Figure 2 ) reciprocates between the center and the outer periphery of the rotation holding portion 31 while supplying BHF for the subsequent process from the nozzle.

[0140] Thus, DIW adhering to the rotation holding portion 31 , the holding member 31 a arranged on the outer periphery of the rotation holding portion 31 , the first rotation cup 34 , and the second rotation cup 35 can be replaced with BHF in a subsequent step.

[0141] In addition, if Figure 6B As shown, the cleaning operation S3 is a process of cleaning the first to third drain tanks 58a to 58c, for example. In this case, the processing unit 16 includes a cleaning liquid supply unit 100 that supplies DIW as a cleaning liquid to the first drain tank 58a.

[0142] The cleaning liquid supply unit 100 includes a cleaning liquid supply path 100a, a DIW supply source 100b, a valve 100c, and a flow regulator 100d. One end of the cleaning liquid supply path 100a is connected to the DIW supply source 100b, and the other end is connected to the drain port 51a of the first cup 50a. The valve 100c and flow regulator 100d are located in the cleaning liquid supply path 100a and are controlled by the controller 4.

[0143] exist Figure 6B In the cleaning operation S3 shown, the valve 100c is opened for a predetermined time, thereby supplying DIW to the first drain groove 58a. As a result, the DIW accumulates in the first drain groove 58a. The DIW accumulated in the first drain groove 58a flows over the upper surface 54a1 of the first peripheral wall portion 54a and overflows into the second drain groove 58b, thereby accumulating in the second drain groove 58b.

[0144] Then, the DIW accumulated in the second drain groove 58b flows over the upper surface 54b1 of the second peripheral wall portion 54b and overflows into the third drain groove 58c, so that the DIW is also accumulated in the third drain groove 58c.

[0145] Thereafter, DIW is discharged from the drain ports 51a to 51c, thereby removing crystals adhering to the first to third drain grooves 58a to 58c.

[0146] Similarly, the recovery operation S4 is a process of pre-cleaning the first to third drain tanks 58a to 58c using BHF of the subsequent process. In this case, the processing unit 16 includes a processing liquid supply unit 101 that supplies BHF of the subsequent process to the first drain tank 58a.

[0147] The processing liquid supply unit 101 includes a processing liquid supply path 101a, a switching valve 101b, and a flow rate regulator 101c. One end of the processing liquid supply path 101a is connected to each of the reservoirs 70a to 70c via the switching valve 101b, and the other end is connected to the drain port 51a of the first cup 50a. The switching valve 101b and flow rate regulator 101c are located in the processing liquid supply path 101a and are controlled by the controller 4.

[0148] exist Figure 6B In the recovery operation S4 shown, the switching valve 101b is controlled to connect any of the reservoirs 70a to 70c storing BHF for the subsequent process to the first drain tank 58a, and the BHF for the subsequent process is supplied to the first drain tank 58a.

[0149] Thus, the BHF of the subsequent process is accumulated in the first drain groove 58a. The BHF of the subsequent process accumulated in the first drain groove 58a flows over the upper surface 54a1 of the first peripheral wall portion 54a and overflows into the second drain groove 58b. Thus, the BHF of the subsequent process is accumulated in the second drain groove 58b.

[0150] Then, the BHF of the subsequent process accumulated in the second drain groove 58b flows over the upper surface 54b1 of the second peripheral wall portion 54b and overflows into the third drain groove 58c, so that the BHF of the subsequent process is also accumulated in the third drain groove 58c.

[0151] Thereafter, BHF for the subsequent process is discharged from the respective drain ports 51a to 51c , thereby replacing DIW adhering to the first to third drain grooves 58a to 58c with BHF for the subsequent process.

[0152] In addition, if Figure 6C As shown, inside the chamber 20, there is a third cup 50c (refer to Figure 2 ) and the anti-fog cover 50e is provided with an exhaust cup 50d. The exhaust cup 50d includes an outer peripheral cylindrical portion 50d1 and an extension portion 50d2 extending radially inward from the upper end of the outer peripheral cylindrical portion 50d1. The exhaust cup 50d is stationary.

[0153] In this case, the cleaning operation S3 is, for example, a process for cleaning the lower surface of the extension portion 50e2 of the anti-fog cover 50e and the upper surface of the extension portion 50d2 of the exhaust cup 50d. In this case, the processing unit 16 includes, for example, a cleaning liquid supply unit 110 for supplying cleaning liquid to the lower surface of the extension portion 50e2 of the anti-fog cover 50e.

[0154] The cleaning liquid supply unit 110 includes a cleaning liquid supply path 110a, a DIW supply source 110b, a valve 110c, and a flow rate regulator 110d. One end of the cleaning liquid supply path 110a is connected to the DIW supply source 110b, and the other end is connected to the nozzle 41e located on the upper surface of the extension 50d2 of the exhaust cup 50d. The valve 110c and flow rate regulator 110d are located in the cleaning liquid supply path 110a and are controlled by the controller 4.

[0155] exist Figure 6C In cleaning operation S3, DIW is supplied from nozzle 41e, accumulating in the space between the extension 50e2 of the anti-fog cover 50e and the extension 50d2 of the exhaust cup 50d. The DIW is then drained from a drainage path (not shown). This removes crystals adhering to the lower surface of the extension 50e2 of the anti-fog cover 50e and the upper surface of the extension 50d2 of the exhaust cup 50d.

[0156] Similarly, the recovery operation S4 is a process of pre-cleaning the lower surface of the extension portion 50e2 of the anti-fog cover 50e and the upper surface of the extension portion 50d2 of the exhaust cup 50d using BHF of the subsequent process. In this case, the processing unit 16 includes a processing liquid supply unit 111 for supplying BHF of the subsequent process to the nozzle 41e.

[0157] The processing liquid supply unit 111 includes a processing liquid supply path 111a, a switching valve 111b, and a flow rate regulator 111c. One end of the processing liquid supply path 111a is connected to each of the reservoirs 70a to 70c via the switching valve 111b, and the other end is connected to the nozzle 41e. The switching valve 111b and the flow rate regulator 111c are provided in the processing liquid supply path 111a and are controlled by the control device 4.

[0158] exist Figure 6C In the recovery operation S4 shown, the switching valve 111b is controlled to connect any one of the reservoirs 70a to 70c storing BHF for the subsequent process to the nozzle 41e, and the BHF for the subsequent process is supplied to the nozzle 41e.

[0159] As a result, the BHF from the subsequent process accumulates in the space between the extension 50e2 of the anti-fog cover 50e and the extension 50d2 of the exhaust cup 50d. The BHF from the subsequent process is then drained through a drainage path (not shown). This allows the BHF from the subsequent process to replace the DIW adhering to the lower surface of the extension 50e2 of the anti-fog cover 50e and the upper surface of the extension 50d2 of the exhaust cup 50d.

[0160] In addition, if Figure 6DAs shown, the cleaning operation S3 is, for example, a process of cleaning the lower surface of the rotation holding unit 31 of the substrate processing unit 30. In this case, the processing unit 16 includes a cleaning liquid supply unit 120 for supplying a cleaning liquid to the lower surface of the rotation holding unit 31.

[0161] The cleaning liquid supply unit 120 includes a nozzle 41f. The nozzle 41f is provided, for example, at the upper end of the inner wall portion 54d. The cleaning liquid supply unit 120 includes a cleaning liquid supply path 120a, a DIW supply source 120b, a valve 120c, and a flow rate regulator 120d.

[0162] One end of the cleaning liquid supply path 120a is connected to the DIW supply source 120b, and the other end is connected to the nozzle 41f. A valve 120c and a flow rate regulator 120d are provided in the cleaning liquid supply path 120a and are controlled by the control device 4.

[0163] exist Figure 6D In the cleaning operation S3 shown, DIW is supplied from the nozzle 41f to the lower surface of the rotating rotation holding unit 31. This can remove crystals adhering to the lower surface of the rotation holding unit 31.

[0164] Likewise, the recovery operation S4 is a process of pre-cleaning the lower surface of the rotation holding unit 31 of the substrate processing unit 30 using BHF of the subsequent process. In this case, the processing unit 16 includes a processing liquid supply unit 121 that supplies BHF of the subsequent process to the nozzle 41f.

[0165] The processing liquid supply unit 121 includes a processing liquid supply path 121a, a switching valve 121b, and a flow rate regulator 121c. One end of the processing liquid supply path 121a is connected to each of the reservoirs 70a to 70c via the switching valve 121b, and the other end is connected to the nozzle 41f. The switching valve 121b and the flow rate regulator 121c are provided in the processing liquid supply path 121a and are controlled by the control device 4.

[0166] exist Figure 6D In the illustrated recovery operation S4, switching valve 121b is controlled to connect one of the reservoirs 70a-70c storing the BHF for the subsequent process to nozzle 41f, thereby supplying the BHF for the subsequent process to nozzle 41f. Subsequently, the BHF for the subsequent process is supplied from nozzle 41f to the bottom surface of the rotating rotating holding unit 31, thereby replacing the DIW adhering to the bottom surface of the rotating holding unit 31 with the BHF for the subsequent process.

[0167] In addition, if Figure 6EAs shown, the cleaning operation S3 is, for example, a process for cleaning the standby parts 65a to 65c provided in the chamber 20. In this case, the processing unit 16 includes a cleaning liquid supply unit 130 for supplying cleaning liquid to the standby parts 65a to 65c. Figure 6E The illustrated standby unit 65a performs various operations.

[0168] The cleaning liquid supply unit 130 includes a cleaning liquid supply path 130a, a DIW supply source 130b, a valve 130c, and a flow rate regulator 130d. One end of the cleaning liquid supply path 130a is connected to the DIW supply source 130b, and the other end is connected to the standby unit 65a. The valve 130c and flow rate regulator 130d are provided in the cleaning liquid supply path 130a and are controlled by the controller 4.

[0169] exist Figure 6E In the cleaning operation S3 shown in FIG. 1 , after DIW is accumulated in the standby portion 65a for a predetermined time, it is discharged from the standby portion 65a to the drain path 59a (see FIG. 1 ). Figure 3 ) discharges DIW. Thus, the crystals that have adhered to the standby portion 65a can be removed.

[0170] Similarly, the recovery operation S4 is a process of pre-cleaning the standby portion 65a provided in the chamber 20 with BHF of the subsequent process. In this case, the processing unit 16 includes a processing liquid supply unit 131 that supplies BHF of the subsequent process to the standby portion 65a.

[0171] The processing liquid supply unit 131 includes a processing liquid supply path 131a, a valve 131b, and a flow rate regulator 131c. One end of the processing liquid supply path 131a is connected to the corresponding reservoir 70a via the valve 131b, and the other end is connected to the standby unit 65a. The valve 131b and flow rate regulator 131c are provided in the processing liquid supply path 131a and are controlled by the controller 4.

[0172] exist Figure 6E In the recovery operation S4 shown, the valve 131b is controlled to connect the storage section 70a storing BHF for the subsequent process and the standby section 65a, and the BHF for the subsequent process is supplied to the standby section 65a.

[0173] After the subsequent BHF is accumulated in the standby section 65a for a predetermined time, the subsequent BHF is discharged from the standby section 65a to the drainage path 59a. This allows the subsequent BHF to replace the DIW adhering to the standby section 65a.

[0174] In addition, if Figure 6FAs shown, a back nozzle 47 for discharging a processing liquid or the like onto the back surface of the wafer W may be disposed within the chamber 20. The back nozzle 47 is an example of a back surface supply unit. The back nozzle 47 is disposed so as to face the back surface of the wafer W held by the holding member 31 a and discharges the processing liquid or the like upward.

[0175] The backside nozzle 47 includes a processing liquid outlet 47a for discharging first to third BHFs as processing liquids and a cleaning liquid outlet 47b for discharging DIW as a cleaning liquid. The backside nozzle 47 is provided in the processing unit 16 so that the backside of the wafer W can be treated not only on the front surface but also on the backside thereof using BHFs.

[0176] Figure 6F In cleaning operation S3 shown in (a), for example, after wafer W is not held by holding member 31a, nozzle 41d is moved back and forth between the center and the outer periphery of back nozzle 47 while supplying DIW from nozzle 41d. This removes crystals adhering to back nozzle 47.

[0177] Likewise, Figure 6F Recovery operation S4 shown in (b) is, for example, a process of pre-cleaning the back surface nozzle 47 using BHF for the subsequent process. In this case, for example, while the wafer W is not held by the holding member 31a, one of the nozzles 41a to 41c (in the figure, nozzle 41a) is moved back and forth between the center and outer periphery of the back surface nozzle 47 while supplying BHF for the subsequent process from that nozzle. This allows the BHF for the subsequent process to replace the DIW adhering to the back surface nozzle 47.

[0178] In addition, the cleaning operation S3 and the recovery operation S4 of the back nozzle 47 are not limited to Figure 6F For example, it can also be, Figure 6G As shown in FIG. 5 (a), DIW as a cleaning liquid is ejected from the cleaning liquid ejection port 47b and overflowed onto the back nozzle 47, thereby performing a cleaning operation S3 of the back nozzle 47. This can remove crystals adhering to the back nozzle 47.

[0179] Then, it can also be, Figure 6G As shown in (b), BHF for the subsequent process is ejected from the processing liquid ejection port 47a and overflowed on the back nozzle 47, thereby performing a recovery operation S4 of the back nozzle 47. In this way, the DIW attached to the back nozzle 47 can be replaced by the BHF for the subsequent process.

[0180] Alternatively, you can perform a combination Figure 6F The cleaning action S3 and the recovery action S4 shown, Figure 6GFor example, after performing the cleaning operation S3 by supplying DIW from the nozzle 41d, the BHF for the subsequent step may be ejected from the processing liquid ejection port 47a of the back nozzle 47 to perform the recovery operation S4.

[0181] Similarly, after DIW is ejected from the cleaning liquid ejection port 47 b of the back nozzle 47 to perform the cleaning operation S3 , BHF for the subsequent step may be supplied from any of the nozzles 41 a to 41 c to perform the recovery operation S4 .

[0182] In the cleaning operation S3 and the recovery operation S4 of each part described above, the control unit 18 controls the switching valves 63a to 63c (see Figure 3 ) It is preferable that the drain flowing into the drain paths 59a to 59c be discharged to the outside from the discharge portion DR.

[0183] Figure 7 : is a graph showing the relationship between the time of the recovery action S4 and the amount of change in the etching rate in the subsequent processing step S1b of the embodiment. Figure 7 The standby units 65a to 65c are shown in FIG. Figure 6E ) and the recovery operation S4 for the first drain tank 58a to the third drain tank 58c (see Figure 6B ) performs recovery action S4.

[0184] like Figure 7 As shown in FIG. 1 , it can be seen that when the recovery operation S4 is relatively short, the etching rate in the subsequent processing step S1 is significantly reduced. This is because when the recovery operation S4 is relatively short, a large amount of DIW used in the cleaning operation S3 remains in the substrate processing unit 30 and the drain unit 50. As a result, DIW is mixed with BHF recovered in the subsequent processing step S1b, reducing the concentration of the recycled BHF.

[0185] On the other hand, Figure 7 As shown, by extending the time of the recovery operation S4, the etching rate in the subsequent processing step S1 can be maintained within an appropriate range.

[0186] That is, the waste liquid flowing into the waste liquid paths 59a to 59c in the cleaning operation S3 and the recovery operation S4 is discharged to the outside from the drain portion DR, thereby preventing the DIW as the cleaning liquid and the BHF containing the DIW from being recovered into the reservoirs 70a to 70c.

[0187] Furthermore, in the embodiment, the recovery operation S4 is performed for a time corresponding to the BHF of the subsequent process. Thus, even when the reused BHF is used, the etching rate in the subsequent processing step S1b can be maintained within an appropriate range.

[0188] As described above, according to the embodiment, it is possible to suppress a decrease in the concentration of recovered BHF, and thus it is possible to suppress deterioration in the performance of liquid treatment.

[0189] Furthermore, the aforementioned "recovery operation S4 for a time corresponding to the BHF of the subsequent process" is preferably included in the cleaning process S2 corresponding to the type of BHF contained in the subsequent process treatment process S1b. That is, in this embodiment, the cleaning process S2 is preferably selected based on the subsequent process treatment process S1b of the cleaning process S2.

[0190] For example, when the first BHF is used in the subsequent process recipe S1b, the control unit 18 preferably reads the cleaning recipe S2 used in the recovery action S4 of the first BHF from the storage unit 19. The read cleaning recipe S2 includes the execution time of the recovery action S4 corresponding to the first BHF.

[0191] In this manner, by selecting cleaning process S2 based on the subsequent process step S1b, the subsequent process step liquid treatment can be started while the substrate processing unit 30 and the like are replaced with the BHF used in the subsequent process step S1b. Therefore, according to the embodiment, when the BHF used in the process step S1b is recovered and reused, changes in the BHF concentration can be suppressed, thereby enabling stable implementation of the subsequent process liquid treatment.

[0192] In the embodiment, in the recovery operation S4 , when BHF for a subsequent process is ejected from any of the nozzles 41 a to 41 c for pre-cleaning, liquid processing of the wafer W may be performed using the ejected BHF for the subsequent process.

[0193] Thus, liquid processing of the wafer W can be performed during the recovery operation S4 , and thus the processing unit 16 can be restored to liquid processing as soon as possible.

[0194] <Various Modifications>

[0195] Next, refer to Figure 8 and Figure 9 Various modifications of the embodiment will be described. Figure 8 It is a diagram for explaining the flow of processing in the substrate processing system 1 according to the first modification of the embodiment.

[0196] like Figure 8As shown, the cleaning process S2 of Modification 1 differs from the embodiment in that a gas purge operation S5 is performed between the cleaning operation S3 and the recovery operation S4. In Modification 1, the processing unit 16 includes a gas supply unit (not shown) for purging gas into the substrate processing unit 30 and the liquid drain unit 50.

[0197] Furthermore, in the first modification, the control unit 18 (see Figure 1 ) After the cleaning operation S3 is performed, the following gas purge operation S5 is performed: gas is supplied from the gas supply unit to purge the DIW attached to the substrate processing unit 30 and the liquid discharge unit 50.

[0198] This can reduce DIW adhering to the substrate processing unit 30 and the drain unit 50 before the recovery operation S4. Therefore, according to the embodiment, the time required for the recovery operation S4 can be shortened, and the processing unit 16 can be restored to liquid processing as soon as possible.

[0199] In the gas purge operation S5, the control unit 18 preferably supplies gas to the areas where the DIW is stagnant. In particular, DIW enters narrow gaps in movable parts within the processing unit 16 (e.g., the first liquid receiving part 55a, the second liquid receiving part 55b, the first support member 56a, the second support member 57a, etc.), making it difficult to displace the DIW even after pre-washing. Therefore, the gas purge operation S5 is preferably performed near these movable parts.

[0200] Thus, the DIW adhering to the substrate processing unit 30 and the drain unit 50 can be further reduced before the recovery operation S4.

[0201] Figure 9 This is a diagram for explaining the process flow in the substrate processing system 1 according to the second modification of the embodiment. In the cleaning process S2 of the second modification, during the recovery operation S4, the concentration sensors 62a to 62c (see Figure 3 ) detects the discharge path 59a to 59c (refer to Figure 3 ) The concentration of hydrofluoric acid in the flowing effluent.

[0202] Then, the control unit 18 performs a determination operation S6 for determining whether the concentration of hydrofluoric acid in the waste liquid flowing through the waste liquid paths 59 a to 59 c is appropriate.

[0203] Next, when the DIW in the substrate processing unit 30 and the drain unit 50 is replaced with BHF for the subsequent process in the recovery operation S4 and the hydrofluoric acid concentration in the drain is appropriate, the control unit 18 ends the recovery operation S4 and starts the next processing step S1b.

[0204] At this time, the control unit 18 controls the switching valves 63a to 63c (see Figure 3) and the discharge path of the waste liquid flowing in the waste liquid paths 59a to 59c is switched to the recovery paths 64a to 64c (see Figure 3 ). Thus, the processing step S1b can be performed while recovering BHF for subsequent steps.

[0205] On the other hand, when the DIW in the substrate processing unit 30 and the drain unit 50 is not sufficiently replaced and the concentration of hydrofluoric acid in the drain is inappropriate, the control unit 18 continues the recovery operation S4.

[0206] At this time, the controller 18 controls the switching valves 63a to 63c to maintain the discharge path of the waste liquid flowing through the waste liquid paths 59a to 59c by the drain portion DR. This can further suppress the recovery of BHF mixed with DIW.

[0207] That is, in Figure 9 In the second modification shown, the recovery operation S4 is performed while detecting the hydrofluoric acid concentration in the drain flowing into the drain paths 59a to 59c by the concentration sensors 62a to 62c, thereby further suppressing the recovery of BHF mixed with DIW.

[0208] This modification example 2 is preferably applicable, for example, to a case where, among BHFs having various hydrofluoric acid concentrations, the BHF with a higher hydrofluoric acid concentration is the BHF used in a subsequent process. Even when a trace amount of DIW is mixed into this BHF with a higher hydrofluoric acid concentration, the etching rate varies significantly. In other words, the BHF with a higher hydrofluoric acid concentration is more sensitive to DIW than the BHF with a lower hydrofluoric acid concentration.

[0209] Thus, by applying the above-mentioned determination operation S6 to BHF having a high sensitivity to DIW, DIW can be prevented from being mixed into the recovery liquid of the BHF, and thus liquid processing using the recovery liquid can be stably performed.

[0210] Furthermore, when the BHF with a high hydrofluoric acid concentration is the BHF for the subsequent process, it is preferable to apply the gas purge action S5 of Modification 1 in addition to the determination action S6 of Modification 2. Thus, the amount of DIW that may be mixed with the BHF is reduced by the gas purge action S5, thereby enabling liquid processing using the recovery liquid to be more stably performed.

[0211] The substrate processing apparatus (substrate processing system 1) of the embodiment includes a substrate processing unit 30, a drain unit 50, and a control unit 18. The substrate processing unit 30 supplies a processing liquid from a processing liquid supply unit to a mounted substrate (wafer W) to perform liquid processing. The drain unit 50 has recovery paths 64a to 64c connected to storage units 70a to 70c for storing the processing liquid, and drains the processing liquid used for the liquid processing. The control unit 18 executes a processing process S1 for liquid processing and a cleaning process S2 for cleaning the substrate processing unit 30 and the drain unit 50. In addition, as the cleaning process S2, the control unit 18 executes a recovery action S4 for supplying a processing liquid from the processing liquid supply unit to replace the cleaning liquid attached to the substrate processing unit 30 and the drain unit 50 with a processing liquid after executing a cleaning action S3 for cleaning the substrate processing unit 30 and the drain unit 50 by supplying a cleaning liquid from the cleaning liquid supply unit. Thus, it is possible to suppress deterioration of the performance of the liquid processing.

[0212] In the substrate processing apparatus (substrate processing system 1 ) of the embodiment, the processing recipe S1 includes the processing sequence of the substrate (wafer W) and the type of processing liquid. Therefore, the processing units 16 can perform liquid processing optimized for different types of processing liquids.

[0213] Furthermore, in the substrate processing apparatus (substrate processing system 1) of the embodiment, the cleaning process S2 is selected based on the type of processing liquid included in the processing process S1. This allows stable execution of the liquid processing in the subsequent steps.

[0214] In the substrate processing apparatus (substrate processing system 1) of the embodiment, the cleaning process S2 is selected based on the processing process S1b that is the subsequent step of the cleaning process S2. This allows for stable liquid processing in the subsequent step.

[0215] Furthermore, in the substrate processing apparatus (substrate processing system 1) of the embodiment, the drain unit 50 includes a drain portion DR for discharging the processing liquid to the outside. Furthermore, the control unit 18 controls the drain portion DR to discharge the liquid flowing through the drain paths 59a-59c to the outside during the cleaning process S2. This prevents the recovery of BHF mixed with DIW.

[0216] Furthermore, in the substrate processing apparatus (substrate processing system 1) of the embodiment, the drain unit 50 includes concentration sensors 62a-62c for detecting the concentration of the processing liquid. Furthermore, the control unit 18 terminates recovery operation S4 based on the concentration of the processing liquid detected by the concentration sensors 62a-62c. This further reduces the recovery of BHF mixed with DIW.

[0217] The substrate processing apparatus (substrate processing system 1) of the embodiment includes a gas supply unit that supplies gas to the substrate processing unit 30 and the liquid drain unit. Furthermore, after executing the cleaning operation S3, the control unit 18 executes a gas purge operation S5 that supplies gas to purge the cleaning liquid adhering to the substrate processing unit 30 and the liquid drain unit 50. This allows the processing unit 16 to quickly resume liquid processing.

[0218] Furthermore, in the substrate processing apparatus (substrate processing system 1) of the embodiment, the control unit 18 supplies gas to the area where the cleaning liquid is accumulated as a gas purge operation S5. This can further reduce the amount of cleaning liquid adhering to the substrate processing unit 30 and the drain unit 50 before resuming operation S4.

[0219] The substrate processing apparatus (substrate processing system 1) of the embodiment further includes standby sections 65a-65c for the processing liquid supply section to standby. The drain paths of the standby sections 65a-65c are connected to the drain paths 59a-59c of the drain section 50. Furthermore, the control unit 18 performs the same cleaning process S2 on the standby sections 65a-65c as on the substrate processing section 30. This prevents the recovery of BHF mixed with DIW adhering to the standby sections 65a-65c.

[0220] The substrate processing apparatus (substrate processing system 1) of the embodiment includes a backside supply unit (backside nozzle 47) that discharges processing liquid toward the backside of the substrate (wafer W). Furthermore, the control unit 18 executes a cleaning process S2 on the backside supply unit (backside nozzle 47). This prevents the recovery of BHF mixed with DIW adhering to the backside nozzle 47.

[0221] <Substrate processing sequence>

[0222] Next, refer to Figure 10 Next, the procedure of substrate processing according to the embodiment will be described. Figure 10 This is a flowchart showing the procedure of substrate processing executed by the substrate processing system 1 according to the embodiment.

[0223] Initially, the control unit 18 performs a cleaning process selection process (step S101) to select a cleaning process S2 based on the treatment process S1b scheduled to be executed next. For example, the control unit 18 selects a BHF of a subsequent process included in the treatment process S1b scheduled to be executed next, and a cleaning process S2 including the same type of BHF.

[0224] When the selected cleaning process S2 is process A (step S102, process A), the control unit 18 performs cleaning processing (step S103) based on the selected process A. This process A is, for example, the cleaning process S2 when the BHF of the subsequent process is the first BHF.

[0225] In step S103, DIW is supplied as a cleaning liquid from a cleaning liquid supply unit (e.g., nozzle 41d) to clean the substrate processing unit 30 and the drain unit 50. In step S103, crystals caused by BHF adhering to the substrate processing unit 30 and the drain unit 50 can be removed.

[0226] Next, the control unit 18 performs the following recovery process based on the selected process A: BHF for the subsequent process is supplied from the processing liquid supply unit to replace the DIW adhering to the substrate processing unit 30 and the drain unit 50 with BHF (step S104). This prevents the DIW remaining in the substrate processing unit 30 and the drain unit 50 from being collected in the reservoirs 70a to 70c.

[0227] Then, the process of step S104 is performed at a time predetermined in advance in the recipe A. When the process is completed, the control unit 18 ends the series of processes.

[0228] On the other hand, when the cleaning process S2 selected in step S101 is process B (step S102, process B), the control unit 18 performs cleaning processing (step S105) based on the selected process B. This process B is, for example, the cleaning process S2 when the BHF of the subsequent process is the second BHF.

[0229] In step S105, DIW is supplied as a cleaning liquid from a cleaning liquid supply unit (e.g., nozzle 41d) to clean the substrate processing unit 30 and the drain unit 50. In step S105, crystals caused by BHF adhering to the substrate processing unit 30 and the drain unit 50 can be removed.

[0230] Next, the control unit 18 performs a gas purge process based on the selected process B. Gas is supplied from a gas supply unit within the processing unit 16 to purge the DIW adhering to the substrate processing unit 30 and the drain unit 50 (step S106). This reduces the amount of DIW adhering to the substrate processing unit 30 and the drain unit 50 before the subsequent recovery process.

[0231] Next, the control unit 18 performs the following recovery process based on the selected process B: BHF for the subsequent process is supplied from the processing liquid supply unit to replace the DIW adhering to the substrate processing unit 30 and the drain unit 50 with BHF (step S107). This prevents the DIW remaining in the substrate processing unit 30 and the drain unit 50 from being collected in the reservoirs 70a to 70c.

[0232] Then, the process of step S107 is performed at a time predetermined in advance in recipe B. When this process is completed, the control unit 18 ends the series of processes.

[0233] When the cleaning process S2 selected in step S101 is process C (step S102, process C), the control unit 18 performs cleaning processing (step S108) based on the selected process C. This process C is, for example, the cleaning process S2 when the BHF in the subsequent process is the third BHF.

[0234] In step S108, DIW is supplied as a cleaning liquid from a cleaning liquid supply unit (e.g., nozzle 41d) to clean the substrate processing unit 30 and the drain unit 50. In step S108, crystals caused by BHF adhering to the substrate processing unit 30 and the drain unit 50 can be removed.

[0235] Next, the control unit 18 performs a gas purge process based on the selected process C. Gas is supplied from a gas supply unit within the processing unit 16 to purge the DIW adhering to the substrate processing unit 30 and the drain unit 50 (step S109). This reduces the amount of DIW adhering to the substrate processing unit 30 and the drain unit 50 before the subsequent recovery process.

[0236] Next, the control unit 18 performs the following recovery process based on the selected process C (step S110): BHF for the subsequent process is supplied from the processing liquid supply unit to replace the DIW adhering to the substrate processing unit 30 and the drain unit 50 with BHF. This prevents the DIW remaining in the substrate processing unit 30 and the drain unit 50 from being collected in the reservoirs 70a to 70c.

[0237] Next, the control unit 18 determines whether the concentration of hydrofluoric acid in the waste liquid flowing into the waste liquid paths 59 a to 59 c is appropriate (step S111 ).

[0238] If the hydrofluoric acid concentration in the waste liquid is appropriate (step S111, yes), the control unit 18 ends the series of processes. On the other hand, if the hydrofluoric acid concentration in the waste liquid is inappropriate (step S111, no), the control unit 18 continues the process of step S110.

[0239] As described above, in the substrate processing method of the embodiment, by selecting the cleaning process S2 (process A to process C) according to the processing process S1b, an optimal cleaning process according to the type of BHF used in the processing process S1b can be performed.

[0240] The substrate processing method of the embodiment includes a liquid processing step and a cleaning step. The liquid processing step performs the following processing process S1: the processing liquid is supplied from the processing liquid supply part (nozzles 41a~41c) to the substrate (wafer W) loaded on the substrate processing part 30, and the used processing liquid is recovered from the drainage part 50 to the storage part 70a~70c. The cleaning step performs a cleaning process S2 for cleaning the processing liquid attached to the substrate processing part 30 and the drainage part 50 during the liquid processing step. The cleaning step includes a cleaning action S3 of supplying cleaning liquid to clean the substrate processing part 30 and the drainage part, and a recovery action S4 of supplying processing liquid to replace the cleaning liquid attached to the substrate processing part 30 and the drainage part 50 with processing liquid. In this way, the deterioration of the performance of the liquid processing can be suppressed.

[0241] While the embodiments of the present disclosure have been described above, the present disclosure is not limited to the aforementioned embodiments and various modifications are possible without departing from the spirit of the present disclosure. For example, the aforementioned embodiments illustrate the use of DIW as a cleaning liquid and BHF as a treatment liquid, but the cleaning liquid and treatment liquid of the embodiments are not limited to this example.

[0242] The embodiments disclosed herein should be considered in all respects to be illustrative and non-restrictive. In practice, the embodiments described above may be embodied in a variety of forms. Furthermore, the embodiments described above may be omitted, replaced, or modified in various forms without departing from the scope of the appended claims and their intended meaning.

Claims

1. A substrate processing device, wherein: The substrate processing apparatus comprises: a substrate processing section that supplies a processing liquid from a processing liquid supply section to the mounted substrate to perform liquid processing; a drain portion having a recovery path connected to a storage portion storing the treatment liquid, for draining the treatment liquid after use in the liquid treatment; as well as a control unit that executes the liquid treatment process and the cleaning process for cleaning the substrate processing unit and the liquid discharge unit, As the cleaning process, the control unit performs a recovery operation of supplying the processing liquid from the processing liquid supply unit to replace the cleaning liquid attached to the substrate processing unit and the liquid drain unit with the processing liquid after performing a cleaning operation of supplying the processing liquid from the processing liquid supply unit to clean the substrate processing unit and the liquid drain unit. The drainage section has a concentration sensor for detecting the concentration of the processing liquid in the drainage path connected to the substrate processing section. The drainage path is connected to the switching valve via the concentration sensor. The switching valve can switch the discharge path of the drainage liquid flowing in the drainage path between the recovery path and the discharge section for discharging the processing liquid to the outside. The control section discharges the drainage liquid flowing into the drainage section from the discharge section to the outside during the execution of the cleaning process, and switches the switching valve from the discharge section to the recovery path based on the concentration of the processing liquid detected by the concentration sensor, thereby ending the recovery action.

2. The substrate processing apparatus according to claim 1, wherein: The processing procedure includes the processing sequence of the substrate and the type of the processing liquid.

3. The substrate processing apparatus according to claim 2, wherein: The cleaning process is selected based on the type of the processing liquid included in the treatment process.

4. The substrate processing apparatus according to claim 3, wherein: The cleaning process is selected based on the treatment process in a subsequent step of the cleaning process.

5. The substrate processing apparatus according to any one of claims 1 to 4, wherein: The substrate processing apparatus includes a gas supply unit for supplying gas to the substrate processing unit and the liquid discharge unit. After executing the cleaning operation, the control unit executes a gas purge operation for supplying the gas to purge the cleaning liquid adhering to the substrate processing unit and the liquid discharge unit.

6. The substrate processing apparatus according to claim 5, wherein: As the gas purge operation, the control unit supplies the gas to the portion where the cleaning liquid accumulates.

7. The substrate processing apparatus according to any one of claims 1 to 4, wherein: The substrate processing apparatus includes a standby portion for the processing liquid supply portion to standby. The drainage path of the standby unit is connected to the drainage path of the drainage unit, The control unit performs the same cleaning process as that of the substrate processing unit on the standby unit.

8. The substrate processing apparatus according to any one of claims 1 to 4, wherein: The substrate processing apparatus includes a back surface supply unit for ejecting the processing liquid toward the back surface side of the substrate. The control unit performs the cleaning process on the back surface supply unit.

9. A substrate processing method, wherein: The substrate processing method includes the following steps: a liquid processing step in which the following processing steps are performed: supplying a processing liquid from a processing liquid supply portion to a substrate placed on a substrate processing portion, and recovering the used processing liquid from a liquid discharge portion to a storage portion; and A cleaning step in which the following cleaning process is performed: cleaning the processing liquid attached to the substrate processing part and the liquid discharge part during the liquid processing step, The cleaning process includes a cleaning operation of supplying a cleaning liquid to clean the substrate processing part and the liquid discharge part, and a recovery operation of supplying the processing liquid to replace the cleaning liquid adhering to the substrate processing part and the liquid discharge part with the processing liquid. The drainage section includes a concentration sensor for detecting the concentration of the processing liquid in a drainage path connected to the substrate processing section. The drainage path is connected to a switching valve via the concentration sensor. The switching valve is capable of switching the discharge path of the drainage liquid flowing in the drainage path between a recovery path connected to a storage section for accumulating the processing liquid and a discharge section for discharging the processing liquid to the outside. In this substrate processing method, during the execution of the cleaning process, the drain liquid flowing into the drain part is discharged to the outside from the discharge part, and based on the concentration of the processing liquid detected by the concentration sensor, the switching valve is switched from the discharge part to the recovery path, thereby ending the recovery action.

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