Display device and method of manufacturing the same

Abstract

The present application discloses a display device and a method for manufacturing the display device. The display device includes: a base substrate including an opening area, an opening peripheral area, and a display area at least partially surrounding the opening peripheral area, wherein the opening peripheral area is a non-display area at least partially surrounding the opening area; a thin film transistor arranged on the base substrate in the display area; a through-hole insulating layer arranged on the thin film transistor and having a first opening surrounding the opening area, wherein the first opening is in the opening peripheral area; a pixel defining layer arranged on the through-hole insulating layer and having a first opening overlapping with the first opening of the through-hole insulating layer; a transparent filler arranged on the base substrate in the opening area; and a sealing substrate arranged on the transparent filler.

Description

Technical Field

[0001] Exemplary embodiments of the present inventive concept generally relate to a display device and a method of manufacturing the same, and more particularly, to a display device including an opening region in a display region and a method of manufacturing the same. Background Art

[0002] In general, display products are becoming smaller and lighter, and are being developed to have excellent performance. Conventional cathode ray tube (CRT) televisions have been widely used as display devices due to their performance and relatively low price. However, in recent years, display devices such as plasma display devices, liquid crystal display devices, and organic light emitting diode display devices that overcome the weaknesses of CRT in terms of miniaturization or portability and have advantages such as miniaturization, light weight, and low power consumption are being developed.

[0003] In an attempt to expand the display area of display devices, frameless display devices, display devices with notches, etc. are being developed, and display devices in which an opening area or hole is formed in the display area to place a camera, etc. in the hole are being developed. Summary of the Invention

[0004] According to an exemplary embodiment of the present invention, a display device includes: a base substrate, including an opening area, an opening peripheral area, and a display area at least partially surrounding the opening peripheral area, wherein the opening peripheral area is a non-display area at least partially surrounding the opening area; a thin film transistor, arranged on the base substrate in the display area; a through-hole insulating layer, arranged on the thin film transistor and having a first opening surrounding the opening area, wherein the first opening is in the opening peripheral area; a pixel defining layer, arranged on the through-hole insulating layer and having a first opening overlapping with the first opening of the through-hole insulating layer; a transparent filler, arranged on the base substrate in the opening area; and a sealing substrate, arranged on the transparent filler.

[0005] In an exemplary embodiment of the present inventive concept, a transparent filler is disposed between the base substrate and the sealing substrate and is in contact with the base substrate and the sealing substrate.

[0006] In an exemplary embodiment of the present inventive concept, the transparent filler includes an organic material, and both the via hole insulating layer and the pixel defining layer include an organic material.

[0007] In an exemplary embodiment of the present inventive concept, the base substrate and the sealing substrate each include glass, and the transparent filler has a refractive index of about 1.48.

[0008] In an exemplary embodiment of the present inventive concept, the display device further includes a data signal line disposed between the base substrate and the via insulating layer, wherein the first opening of the via insulating layer and the first opening of the pixel defining layer expose the data signal line.

[0009] In an exemplary embodiment of the present invention, the display device further includes: a first insulating layer arranged on the base substrate; a gate signal line arranged on the first insulating layer; and a second insulating layer arranged on the gate signal line, wherein the second insulating layer is arranged between the data signal line and the gate signal line.

[0010] In an exemplary embodiment of the present inventive concept, the first insulating layer, the second insulating layer, the via-hole insulating layer, and the pixel defining layer are not arranged in the opening region.

[0011] In an exemplary embodiment of the present inventive concept, the transparent filler contacts the via hole insulating layer.

[0012] In an exemplary embodiment of the present invention, the first opening of the through-hole insulating layer and the first opening of the pixel defining layer form a first overlapping opening, wherein the through-hole insulating layer includes a second opening, and the pixel defining layer includes a second opening overlapping with the second opening of the through-hole insulating layer, wherein the second opening of the through-hole insulating layer and the second opening of the pixel defining layer form a second overlapping opening, wherein the first overlapping opening is spaced apart from the second overlapping opening.

[0013] In an exemplary embodiment of the present inventive concept, the first opening of the via insulating layer and the first opening of the pixel defining layer form a first overlapping opening, wherein a width of the first overlapping opening is between about 6 micrometers and about 10 micrometers.

[0014] In an exemplary embodiment of the present inventive concept, the display device further includes an optical module disposed under the base substrate and overlapping the transparent filler in the opening region.

[0015] In an exemplary embodiment of the present inventive concept, the transparent filler, the sealing substrate, and the base substrate have the same refractive index.

[0016] In an exemplary embodiment of the present inventive concept, the display device further includes a spacer disposed between the pixel defining layer and the sealing substrate.

[0017] In an exemplary embodiment of the present inventive concept, the display device further includes a first electrode disposed on the via insulating layer and electrically connected to the thin film transistor; a light emitting layer disposed on the first electrode; and a second electrode disposed on the light emitting layer.

[0018] According to an exemplary embodiment of the present invention, a method for manufacturing a display device includes: forming a thin film transistor in a display area of a base substrate, the base substrate including an opening area through which light passes, an opening peripheral area, and a display area at least partially surrounding the opening peripheral area, wherein the opening peripheral area is a non-display area at least partially surrounding the opening area; forming a through-hole insulating layer in the opening peripheral area of the base substrate on which the thin film transistor is formed, wherein the through-hole insulating layer includes an opening surrounding the opening area; providing a transparent filler in the opening area of the base substrate; and providing a sealing substrate on the transparent filler.

[0019] In an exemplary embodiment of the present inventive concept, the method further includes forming a pixel defining layer on the via hole insulating layer, wherein the pixel defining layer includes an opening overlapping with the opening of the via hole insulating layer.

[0020] In an exemplary embodiment of the present inventive concept, the transparent filler includes an organic material and a curing agent, and the via hole insulating layer and the pixel defining layer each include an organic material, and wherein the method further includes curing the transparent filler.

[0021] In an exemplary embodiment of the present inventive concept, when curing the transparent filler, a UV curing scheme, a hot air or hot plate curing scheme is used.

[0022] In an exemplary embodiment of the present inventive concept, the base substrate and the sealing substrate include glass, and the transparent filler has a refractive index of about 1.48.

[0023] In an exemplary embodiment of the present inventive concept, the method further includes: arranging the optical module under the base substrate to overlap with the transparent filler; and before forming the through-hole insulating layer, forming a data signal line on the base substrate, wherein an opening of the through-hole insulating layer exposes the data signal line. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 is a plan view illustrating a display device according to an exemplary embodiment of the inventive concept.

[0025] Figure 2 is a diagram showing a view taken along line II' Figure 1 A cross-sectional view of a display device.

[0026] Figure 3 is a cross-sectional view illustrating a display device according to an exemplary embodiment of the inventive concept.

[0027] Figure 4 is a cross-sectional view illustrating a display device according to an exemplary embodiment of the inventive concept.

[0028] Figure 5A 、 Figure 5B 、 Figure 5C 、 Figure 5D and Figure 5E is a cross-sectional view illustrating a method of manufacturing a display device according to an exemplary embodiment of the inventive concept.

[0029] Figure 6 is a block diagram illustrating an electronic device according to an exemplary embodiment of the inventive concept.

[0030] Figure 7A The diagram shows Figure 6 FIG. 1 is a diagram of an example in which the electronic device is implemented as a television.

[0031] Figure 7B The diagram shows Figure 6 FIG2 is a diagram of an example in which the electronic device is implemented as a smart phone. DETAILED DESCRIPTION

[0032] Hereinafter, exemplary embodiments of the present inventive concept will be explained in detail with reference to the accompanying drawings.

[0033] Figure 1 is a plan view illustrating a display device according to an exemplary embodiment of the inventive concept.

[0034] Reference Figure 1 , the display device may include a display area DA, an opening peripheral area HPA located in the display area DA, and an opening area HA located in the opening peripheral area HPA.

[0035] The opening area HA may allow light to pass through, and the optical module (eg, see Figure 2 The opening peripheral area HPA is a non-display area surrounding the opening area HA, and signal lines and the like may be arranged in the opening peripheral area HPA.

[0036] The display area DA is an area in which an image is displayed, and a plurality of pixels may be arranged in the display area DA. Each pixel may include a light-emitting structure and a pixel circuit including a thin-film transistor electrically connected to the light-emitting structure. For example, the display area DA may have a rectangular shape having sides that are elongated in the second direction D2 on a plane defined by a first direction D1 and a second direction D2 substantially perpendicular to the first direction D1. For example, the display area DA may have rounded corners.

[0037] A peripheral area may be formed along an edge of the display device, the peripheral area being a non-display area in which no image is displayed. For example, the peripheral area may at least partially surround the display area DA.

[0038] Figure 2is a diagram showing a view taken along line II' Figure 1 A cross-sectional view of a display device.

[0039] Reference Figure 2 The display device may include a base substrate 100, a buffer layer 110, an active pattern ACT, a first insulating layer 120, a gate conductive layer, a second insulating layer 130, a source-drain conductive layer, a through-hole insulating layer VIA, a pixel defining layer PDL, a light emitting structure 180, a spacer SPC, a transparent filler 300, a sealing substrate 200 and an optical module 400.

[0040] The base substrate 100 may be formed of a transparent or opaque material. For example, the base substrate 100 may include a quartz substrate, a synthetic quartz substrate, a calcium fluoride substrate, a fluorine-doped quartz substrate (e.g., an F-doped quartz substrate), a soda-lime glass substrate, a non-alkali glass substrate, etc. In an exemplary embodiment of the present inventive concept, the base substrate 100 may be a transparent resin substrate having flexibility. An example of a transparent resin substrate that can be used as the base substrate 100 may include a polyimide substrate.

[0041] The buffer layer 110 may be disposed over the base substrate 100. The buffer layer 110 may prevent metal atoms or impurities from diffusing from the base substrate 100 into the active pattern ACT and may control a heat transfer rate during a crystallization process for forming the active pattern ACT to obtain a substantially uniform active pattern ACT.

[0042] The buffer layer 110 may include an inorganic insulating material and may not be formed in the open area HA.

[0043] The active pattern ACT may be arranged on the buffer layer 110 in the display area DA. The active pattern ACT may include, for example, amorphous silicon or polycrystalline silicon. In an exemplary embodiment of the present inventive concept, the active pattern ACT may include an oxide. For example, the active pattern ACT may include at least one of indium (In), gallium (Ga), tin (Sn), zirconium (Zr), vanadium (V), hafnium (Hf), cadmium (Cd), germanium (Ge), chromium (Cr), titanium (Ti), and / or zinc (Zn). The active pattern ACT may include a drain region, a source region, and a channel region arranged between the drain region and the source region. The drain region and the source region are doped with impurities.

[0044] The first insulating layer 120 may be disposed on the buffer layer 110. The first insulating layer 120 may be disposed with a substantially uniform thickness along the contour of the active pattern ACT to cover the active pattern ACT on the buffer layer 110. For example, the first insulating layer 120 may include multiple layers or a single layer. The first insulating layer 120 may include an inorganic insulating material and may not be formed in the open area HA.

[0045] A gate conductive layer may be disposed on the first insulating layer 120. The gate conductive layer may include a gate electrode GE and a gate signal line GSL. Furthermore, the gate electrode GE overlaps the active pattern ACT, and the gate signal line GSL is disposed in the open peripheral area HPA. The gate conductive layer may be formed using a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, or the like.

[0046] The second insulating layer 130 may be disposed on the first insulating layer 120 on which the gate conductive layer is disposed. The second insulating layer 130 may be disposed with a substantially uniform thickness along the contour of the gate conductive layer to cover the gate conductive layer on the first insulating layer 120. The second insulating layer 130 may include multiple layers or a single layer.

[0047] The second insulating layer 130 may include an inorganic insulating material and may not be formed in the open area HA.

[0048] A source-drain conductive layer may be disposed on the second insulating layer 130. The source-drain conductive layer may include a source electrode SE and a drain electrode DE, which are electrically connected to the source region and drain region of the active pattern ACT, respectively, via contact holes formed through the second insulating layer 130 and the first insulating layer 120. The source-drain conductive layer may further include a data signal line DSL disposed in the open peripheral area HPA. The source-drain conductive layer may be formed using a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, or the like.

[0049] The gate electrode GE, the active pattern ACT, the source electrode SE, and the drain electrode DE may be included in the thin film transistor TFT.

[0050] The via insulating layer VIA may be disposed on the second insulating layer 130 on which the source-drain conductive layer is disposed. For example, the via insulating layer VIA may cover the source-drain conductive layer. The via insulating layer VIA may have a single-layer structure, or may have a multi-layer structure including, for example, at least two insulating films. The via insulating layer VIA may be formed using an organic material such as a photoresist, an acrylic resin, a polyimide resin, a polyamide resin, and a siloxane resin.

[0051] The light emitting structure 180 may include a first electrode 181 , a light emitting layer 182 , and a second electrode 183 .

[0052] The first electrode 181 may be arranged on the through-hole insulating layer VIA. The first electrode 181 may be electrically connected to the thin film transistor TFT through a through hole formed in the through-hole insulating layer VIA. Depending on the light-emitting scheme of the display device, the first electrode 181 may be formed of, for example, a reflective material or a transmissive material. For example, the first electrode 181 may include aluminum, an aluminum alloy, aluminum nitride, silver, a silver alloy, tungsten, tungsten nitride, copper, a copper alloy, nickel, chromium, chromium nitride, molybdenum, a molybdenum alloy, titanium, titanium nitride, platinum, tantalum, tantalum nitride, neodymium, scandium, strontium ruthenium oxide, zinc oxide, indium tin oxide, tin oxide, indium oxide, gallium oxide, indium zinc oxide, etc. These materials may be used alone or in combination with each other. In an exemplary embodiment of the present inventive concept, the first electrode 181 may have a single-layer structure or a multi-layer structure including a metal film, an alloy film, a metal nitride film, a conductive metal oxide film, and / or a transparent conductive material film.

[0053] The pixel defining layer PDL may be arranged on the through-hole insulating layer VIA on which the first electrode 181 is arranged. The pixel defining layer PDL may be formed of, for example, an organic material or the like. For example, the pixel defining layer PDL may be formed by using a photoresist, a polyacrylate resin, a polyimide resin, an acrylic resin, a silicone compound, or the like. According to an exemplary embodiment of the present invention, the pixel defining layer PDL may be etched to form an opening that partially exposes the first electrode 181. The display area and the non-display area of the display device may be formed by the opening of the pixel defining layer PDL. For example, the portion where the opening of the pixel defining layer PDL is located may correspond to the display area, and the non-display area may correspond to a portion adjacent to the opening of the pixel defining layer PDL.

[0054] The light-emitting layer 182 may be arranged on the portion of the first electrode 181 exposed by the opening of the pixel-defining layer (PDL). In addition, the light-emitting layer 182 may extend onto the sidewalls of the opening of the pixel-defining layer (PDL). In an exemplary embodiment of the present invention, the light-emitting layer 182 may have a multilayer structure including an organic light-emitting layer, a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, etc. In an exemplary embodiment of the present invention, in addition to the organic light-emitting layer, the hole injection layer, the hole transport layer, the electron transport layer, the electron injection layer, etc. may be formed together to correspond to multiple pixels. The organic light-emitting layer of the light-emitting layer 182 may be formed using a light-emitting material to generate different colors of light such as red, green, and blue light according to each pixel of the display device. According to an exemplary embodiment of the present invention, the organic light-emitting layer of the light-emitting layer 182 may have a structure in which multiple light-emitting materials for realizing different colors of light such as red, green, and blue are stacked to emit white light. In this case, the above light-emitting structures may be formed together to correspond to the pixels, and the pixels may be classified by the color filter layer.

[0055] The second electrode 183 may be arranged on the pixel defining layer PDL and the light emitting layer 182. Depending on the light emitting scheme of the display device, the second electrode 183 may include, for example, a transmissive material or a reflective material. For example, the second electrode 183 may include aluminum, an aluminum alloy, aluminum nitride, silver, a silver alloy, tungsten, tungsten nitride, copper, a copper alloy, nickel, chromium, chromium nitride, molybdenum, a molybdenum alloy, titanium, titanium nitride, platinum, tantalum, tantalum nitride, neodymium, scandium, strontium ruthenium oxide, zinc oxide, indium tin oxide, tin oxide, indium oxide, gallium oxide, indium zinc oxide, etc. These materials may be used alone or in combination with each other. In an exemplary embodiment of the present invention, the second electrode 183 may have a single-layer structure or a multilayer structure including a metal film, an alloy film, a metal nitride film, a conductive metal oxide film and / or a transparent conductive material film.

[0056] In this case, the opening VV surrounding the opening area HA may be formed in the via insulating layer VIA and the pixel defining layer PDL. In addition, the opening VV may be provided in the opening peripheral area HPA. In an exemplary embodiment of the present inventive concept, the opening VV may not be in the display area DA.

[0057] For example, an opening surrounding the opening area HA surrounded by the opening peripheral area HPA may be formed in the through-hole insulating layer VIA, and an opening overlapping the opening of the through-hole insulating layer VIA may be formed in the pixel defining layer PDL. Thus, the through-hole insulating layer VIA and the pixel defining layer PDL, which include an organic material, may be isolated by the opening VV in a path extending between the opening area HA and the display area DA. This prevents gas generated by outgassing of the transparent filler 300 or the like during the manufacturing process from migrating along the layer including the organic material and affecting the light emitting structure 180 in the display area DA. For example, a portion of the pixel defining layer PDL and a portion of the through-hole insulating layer VIA may be separated from another portion of the pixel defining layer PDL and another portion of the through-hole insulating layer VIA by the opening VV.

[0058] In this case, the opening VV may have a predetermined width so that the layer including the organic material can be cut off. For example, the width of the opening VV at the top of the opening VV (for example, the width of the opening VV at the top surface of the pixel defining layer PDL) may be between about 6 micrometers and about 10 micrometers.

[0059] The spacer SPC may be disposed on the pixel defining layer PDL to contact the sealing substrate 200. The spacer SPC may maintain a gap between the base substrate 100 and the sealing substrate 200. For example, the spacer SPC may be disposed in the opening peripheral area HPA.

[0060] A transparent filler 300 may be disposed between the base substrate 100 and the sealing substrate 200 in the opening area HA. The transparent filler 300 may fill all spaces between the base substrate 100 and the sealing substrate 200 to prevent an air gap from being generated between the base substrate 100 and the sealing substrate 200 in the opening area HA. For example, the transparent filler 300 may be in contact with the base substrate 100 and the sealing substrate 200.

[0061] The transparent filler 300 may have a refractive index substantially the same as that of the sealing substrate 200 and the base substrate 100. For example, the transparent filler 300 may have a refractive index of approximately 1.48. The transparent filler 300 may include a transparent resin and may include a thermal curing agent or a UV curing agent. The transparent filler 300 may be cured using a UV curing solution or a hot air or hot plate curing solution. The transparent filler 300 may prevent the formation of an air gap between the sealing substrate 200 and the base substrate 100, and the transparent filler 300 may have a refractive index substantially the same as that of the sealing substrate 200 and the base substrate 100, thereby preventing the occurrence of multi-reflection interference (MRI) during the process of light incident on or leaving the optical module 400 that overlaps with the opening area HA and passes through the sealing substrate 200, the transparent filler 300, and the base substrate 100. Therefore, the optical performance of the optical module 400 may be improved.

[0062] The sealing substrate 200 may be arranged on the spacer SPC and the transparent filler 300. The sealing substrate 200 may prevent moisture and oxygen from penetrating from the outside. The sealing substrate 200 may be formed of a transparent or opaque material. For example, the sealing substrate 200 may include a quartz substrate, a synthetic quartz substrate, a calcium fluoride substrate, a fluorine-doped quartz substrate (e.g., an F-doped quartz substrate), a soda-lime glass substrate, a non-alkali glass substrate, etc. In an exemplary embodiment of the present invention, the sealing substrate 200 may be a transparent resin substrate having flexibility. For example, a touch electrode, etc. may be further provided on the sealing substrate 200.

[0063] The optical module 400 may be arranged below the base substrate 100 (e.g., in the third direction D3) to overlap with the opening area HA. For example, the optical module 400 may include: a camera module for capturing (or, for example, recognizing) an image of an object; a facial recognition sensor module for detecting a user's face; a pupil recognition sensor module for detecting the user's pupils; an acceleration sensor module and a geomagnetic sensor module for determining movement of the display device; a proximity sensor module and an infrared sensor module for detecting proximity relative to the front of the display device; and an illumination sensor module for measuring brightness when placed in a pocket or bag.

[0064] Figure 3is a cross-sectional view illustrating a display device according to an exemplary embodiment of the inventive concept.

[0065] Reference Figure 3 ,Apart from Figure 3 The display device includes a first opening VV1 (eg, a first overlapping opening) and a second opening VV2 (eg, a second overlapping opening), and the first opening VV1 and the second opening VV2 expose a portion of the source-drain conductive layer. Figure 1 and Figure 2 The display devices of FIG. 1 and FIG. 2 are substantially the same. Therefore, redundant description thereof may be omitted.

[0066] A display device according to an exemplary embodiment of the present invention may include a base substrate 100, a buffer layer 110, an active pattern ACT, a first insulating layer 120, a gate conductive layer, a second insulating layer 130, a source-drain conductive layer, a through-hole insulating layer VIA, a pixel defining layer PDL, a light emitting structure 180, a spacer SPC, a transparent filler 300, a sealing substrate 200, and an optical module 400.

[0067] A first opening VV1 and a second opening VV2 surrounding the opening area HA may be formed in the through-hole insulating layer VIA and the pixel defining layer PDL. For example, the first opening VV1 and the second opening VV2 may extend along the opening peripheral area HPA. The first opening VV1 may be spaced apart from the second opening VV2. The second opening VV2 may surround the opening area HA. The first opening VV1 may at least partially surround the second opening VV2.

[0068] For example, a first opening and a second opening surrounding the opening area HA may be formed in the through-hole insulating layer VIA, and a first opening and a second opening overlapping the opening of the through-hole insulating layer VIA may be formed in the pixel defining layer PDL. Thus, the through-hole insulating layer VIA, which includes an organic material, and the pixel defining layer PDL may be isolated by the second opening VV2 and the first opening VV1 in the path from the opening area HA to the display area DA, thereby preventing gas generated by outgassing of the transparent filler 300, etc., from migrating along the layer including the organic material during the manufacturing process and affecting the light emitting structure 180 in the display area DA. For example, a portion of the pixel defining layer PDL and a portion of the through-hole insulating layer VIA may be separated from another portion of the pixel defining layer PDL and another portion of the through-hole insulating layer VIA by the first opening VV1 and the second opening VV2. In this case, the width of each of the first opening VV1 and the second opening VV2 may be between approximately 6 microns and approximately 10 microns.

[0069] Additionally, the first opening VV1 and the second opening VV2 may expose the data signal line DSL, which is part of the source-drain conductive layer. In this case, the first opening VV1 and the second opening VV2 may be formed in a portion of the pixel defining layer PDL and the through-hole insulating layer VIA, in which the data signal line DSL is arranged, so that a step difference can be reduced according to the thickness of the data signal line DSL. For example, the step difference of the through-hole insulating layer VIA can be reduced in the first opening and the second opening of the through-hole insulating layer VIA, thereby preventing a portion of the pixel defining layer PDL from remaining in the first opening VV1 and the second opening VV2 without being removed during the subsequent process of forming the pixel defining layer PDL.

[0070] Figure 4 is a cross-sectional view illustrating a display device according to an exemplary embodiment of the inventive concept.

[0071] Reference Figure 4 , except that the transparent filler 300 is in contact with the through hole insulating layer VIA and the pixel defining layer PDL, the display device may be Figure 3 The display devices are basically the same.

[0072] The display device may include a base substrate 100, a buffer layer 110, an active pattern ACT, a first insulating layer 120, a gate conductive layer, a second insulating layer 130, a source-drain conductive layer, a through-hole insulating layer VIA, a pixel defining layer PDL, a light emitting structure 180, a spacer SPC, a transparent filler 300, a sealing substrate 200 and an optical module 400.

[0073] The transparent filler 300 may be in contact with the through-hole insulating layer VIA and the pixel defining layer PDL including an organic material. Even if the transparent filler 300 is in contact with the through-hole insulating layer VIA and the pixel defining layer PDL, the path of the gas caused by outgassing is isolated through the openings VV1 and VV2 formed in the through-hole insulating layer VIA and the pixel defining layer PDL (for details, see Figure 3 ), so that gas generated due to outgassing of the transparent filler 300 or the like during the manufacturing process can be prevented from moving along the layer including the organic material to affect the light emitting structure 180 in the display area DA.

[0074] Figures 5A to 5E is a cross-sectional view illustrating a method of manufacturing a display device according to an exemplary embodiment of the inventive concept.

[0075] Reference Figure 5AA buffer layer 110, an active pattern ACT of the thin film transistor TFT, a first insulating layer 120, a gate conductive layer including a gate electrode GE and a gate signal line GSL of the thin film transistor TFT, a second insulating layer 130, and a source-drain conductive layer including a source electrode SE and a drain electrode DE of the thin film transistor TFT and a data signal line DSL may be formed on the base substrate 100. A portion of the buffer layer 110, the first insulating layer 120, and the second insulating layer 130 may be removed in the open area HA.

[0076] Reference Figure 5B The via insulating layer VIA may be formed on the second insulating layer 130 on which the source-drain conductive layer is formed. For example, a photoresist material may be applied to the second insulating layer 130 and may be exposed to develop using an additional mask, so that the via insulating layer VIA having the first opening VV1, the second opening VV2, and the through hole exposing the drain electrode DE may be formed.

[0077] In this case, the first opening VV1 and the second opening VV2 may expose the data signal line DSL of the source-drain conductive layer.

[0078] Reference Figure 5C , the first electrode 181 may be formed on the through-hole insulating layer VIA. The pixel defining layer PDL may be formed on the through-hole insulating layer VIA on which the first electrode 181 is formed. For example, a photoresist material may be applied to the through-hole insulating layer VIA and may be exposed to develop using an additional mask, so that the pixel defining layer PDL having the first opening VV1, the second opening VV2, and the opening exposing the first electrode 181 may be formed.

[0079] Reference Figure 5D The light emitting layer 182 and the second electrode 183 may be formed on the first electrode 181. The spacer SPC may be formed on the pixel defining layer PDL. A transparent filler 300 may be formed on the base substrate 100 in the opening area HA. For example, the transparent filler 300 may include an uncured transparent resin solution and may include a thermal curing agent or a UV curing agent. The sealing substrate 200 may be provided on the transparent filler 300 and the spacer SPC.

[0080] Thereafter, when the display area DA and the opening peripheral area HPA are covered with the mask MSK, the transparent filler 300 in the opening area HA may be cured by applying heat or UV light to the transparent filler 300. In this case, the through-hole insulating layer VIA and the pixel defining layer PDL including an organic material may be isolated from the opening area HA to the display area DA by the second opening VV2 and the first opening VV1, so that gas generated by outgassing during the curing of the transparent filler 300 may be prevented from moving along the layer including the organic material and affecting the light emitting structure 180 in the display area DA.

[0081] In addition, gas caused by outgassing may be generated in the pixel defining layer PDL and the via insulating layer VIA of the opening peripheral area HPA adjacent to the opening area HA. In this case, movement of gas caused by outgassing may also be prevented by the first and second openings VV1 and VV2.

[0082] Reference Figure 5E The optical module 400 may be arranged to overlap the opening area HA, so that a display device can be manufactured. The transparent filler 300 of the display device can prevent the generation of an air gap between the sealing substrate 200 and the base substrate 100, and the transparent filler 300 has substantially the same refractive index as the sealing substrate 200 and the base substrate 100, so that the optical performance of the optical module 400 can be improved.

[0083] In addition, by forming the first opening VV1 and the second opening VV2 , damage to the light emitting structure 180 due to gas generated by outgassing during a manufacturing process may be prevented.

[0084] Figure 6 is a block diagram illustrating an electronic device according to an exemplary embodiment of the present inventive concept, Figure 7A The diagram shows Figure 6 The electronic device is implemented as an example of a television, and Figure 7B The diagram shows Figure 6 FIG2 is a diagram of an example in which the electronic device is implemented as a smart phone.

[0085] Reference Figures 6 to 7B , the electronic device 500 may include a processor 510, a memory device 520, a storage device 530, an input / output (I / O) device 540, a power supply 550, and a display device 560. Here, the display device 560 may be Figure 1 In addition, the electronic device 500 may further include a plurality of ports for communicating with a video card, a sound card, a memory card, a universal serial bus (USB) device, other electronic devices, etc. In an exemplary embodiment of the present invention, as Figure 7AAs shown in FIG, the electronic device 500 may be implemented as a television. In an exemplary embodiment of the present invention, as Figure 7B As shown in FIG, the electronic device 500 may be implemented as a smartphone. However, the electronic device 500 is not limited thereto. For example, the electronic device 500 may be implemented as a cellular phone, a video phone, a smart board, a smart watch, a tablet PC, a car navigation system, a computer monitor, a notebook, a head-mounted display (HMD) device, etc.

[0086] The processor 510 can perform various computing functions. For example, the processor 510 can be a microprocessor, a central processing unit (CPU), an application processor (AP), etc. The processor 510 can be coupled to other components of the electronic device 500 via an address bus, a control bus, a data bus, etc. Further, the processor 510 can be coupled to an expansion bus such as a peripheral component interconnect (PCI) bus. The memory device 520 can store data used to operate the electronic device 500. For example, the memory device 520 may include at least one non-volatile memory device, such as an erasable programmable read-only memory (EPROM) device, an electrically erasable programmable read-only memory (EEPROM) device, a flash memory device, a phase change random access memory (PRAM) device, a resistive random access memory (RRAM) device, a nano-floating gate memory (NFGM) device, a polymer random access memory (PoRAM) device, a magnetic random access memory (MRAM) device, a ferroelectric random access memory (FRAM) device, and / or at least one volatile memory device, such as a dynamic random access memory (DRAM) device, a static random access memory (SRAM) device, a mobile DRAM device, and / or the like. The storage device 530 may include a solid-state drive (SSD) device, a hard disk drive (HDD) device, a CD-ROM device, and / or the like. The I / O device 540 may include input devices such as a keyboard, a keypad, a mouse device, a touchpad, a touch screen, and / or output devices such as a printer, a speaker, and / or the like. The power supply 550 may provide power for the operation of the electronic device 500.

[0087] The display device 560 can be coupled to other components through a bus or other communication links. In an exemplary embodiment of the present inventive concept, the I / O device 540 may include the display device 560. As described above, according to the display device 560, an opening area in which an optical module CM such as a camera module is arranged can be arranged in the display area. The display device 560 may include: a base substrate including an opening area through which light passes, an opening peripheral area as a non-display area at least partially surrounding the opening area, and a display area at least partially surrounding the opening peripheral area; a thin film transistor arranged on the base substrate in the display area; a through-hole insulating layer arranged on the thin film transistor and having an opening at least partially surrounding the opening area along the opening peripheral area; a pixel defining layer arranged on the through-hole insulating layer and having an opening overlapping with the opening of the through-hole insulating layer; a transparent filler arranged on the base substrate in the opening area; and a sealing substrate arranged on the transparent filler.

[0088] The transparent filler can have a refractive index substantially the same as that of the sealing substrate and the base substrate, thereby preventing MRI from occurring when light entering or exiting the optical module overlapping the opening area passes through the sealing substrate, the transparent filler, and the base substrate. Consequently, the optical performance of the optical module can be improved.

[0089] In addition, the through-hole insulating layer and the pixel defining layer including an organic material can be isolated by the openings of the through-hole insulating layer and the pixel defining layer in the path from the opening area to the display area, so that gas generated by outgassing of fillers, etc. during the manufacturing process can be prevented from moving along the layer including the organic material and affecting the light-emitting structure in the display area. Since this has been described above, the related repeated description may not be repeated.

[0090] The present invention can be applied to display devices and electronic devices including the display devices. For example, the present invention can be applied to smartphones, cellular phones, video phones, smart boards, smart watches, tablet PCs, car navigation systems, televisions, computer monitors, notebooks, head-mounted display devices, etc.

[0091] While the inventive concepts have been described with reference to exemplary embodiments thereof, persons skilled in the art will recognize that various changes in form and details may be made therein without departing from the spirit and scope of the inventive concepts.

Claims

1. A display device, comprising: a base substrate comprising an opening area, an opening peripheral area, and a display area at least partially surrounding the opening peripheral area, wherein the opening peripheral area is a non-display area at least partially surrounding the opening area; a thin film transistor arranged on the base substrate in the display area; a through-hole insulating layer disposed on the thin film transistor and having a first opening surrounding the opening region, wherein the first opening is in the opening peripheral region; a pixel defining layer disposed on the through-hole insulating layer and having a first opening overlapping with the first opening of the through-hole insulating layer; a transparent filler disposed on the base substrate in the opening region; as well as a sealing substrate disposed on the transparent filler, The first opening of the through-hole insulating layer and the first opening of the pixel defining layer do not overlap with the opening area.

2. The display device according to claim 1, wherein The transparent filler is disposed between the base substrate and the sealing substrate and is in contact with the base substrate and the sealing substrate.

3. The display device according to claim 2, wherein The transparent filler includes an organic material, and both the via hole insulating layer and the pixel defining layer include an organic material.

4. The display device according to claim 3, wherein The base substrate and the sealing substrate each include glass, and the transparent filler has a refractive index of 1.

48.

5. The display device according to claim 1, further comprising: a data signal line disposed between the base substrate and the through-hole insulating layer, The first opening of the through-hole insulating layer and the first opening of the pixel defining layer expose the data signal line.

6. The display device according to claim 5, further comprising: a first insulating layer disposed on the base substrate; a gate signal line arranged on the first insulating layer; as well as a second insulating layer disposed on the gate signal line, The second insulating layer is arranged between the data signal line and the gate signal line.

7. The display device according to claim 6, wherein The first insulating layer, the second insulating layer, the via-hole insulating layer, and the pixel defining layer are not arranged in the opening region.

8. The display device according to claim 1, wherein The transparent filler contacts the through-hole insulating layer.

9. The display device according to claim 1, wherein The first opening of the through-hole insulating layer and the first opening of the pixel defining layer form a first overlapping opening, wherein the through-hole insulating layer includes a second opening, and the pixel defining layer includes a second opening overlapping with the second opening of the through-hole insulating layer, wherein the second opening of the through-hole insulating layer and the second opening of the pixel defining layer form a second overlapping opening, Wherein, the first overlapping opening is spaced apart from the second overlapping opening.

10. The display device according to claim 1, wherein The first opening of the through-hole insulating layer and the first opening of the pixel defining layer form a first overlapping opening, Wherein, the width of the first overlapping opening is between 6 microns and 10 microns.

11. The display device according to claim 1 , further comprising: An optical module is disposed under the base substrate and overlaps the transparent filler in the opening region.

12. The display device according to claim 1, wherein The transparent filler, the sealing substrate, and the base substrate have the same refractive index.

13. The display device according to claim 1, further comprising: A spacer is disposed between the pixel defining layer and the sealing substrate.

14. The display device according to claim 1, further comprising: a first electrode disposed on the through-hole insulating layer and electrically connected to the thin film transistor; a light-emitting layer disposed on the first electrode; as well as The second electrode is arranged on the light-emitting layer.

15. A method for manufacturing a display device, the method comprising: forming a thin film transistor in a display area of a base substrate, the base substrate comprising an opening area through which light passes, an opening peripheral area, and the display area at least partially surrounding the opening peripheral area, wherein the opening peripheral area is a non-display area at least partially surrounding the opening area; forming a through-hole insulating layer in the opening peripheral region of the base substrate where the thin film transistor is formed, wherein the through-hole insulating layer includes an opening surrounding the opening region; providing a transparent filler in the opening region of the base substrate; and providing a sealing substrate on the transparent filler, The opening of the through-hole insulating layer does not overlap with the opening area.

16. The method according to claim 15, further comprising: A pixel defining layer is formed on the through hole insulating layer, wherein the pixel defining layer includes an opening overlapping with the opening of the through hole insulating layer.

17. The method according to claim 16, wherein The transparent filler includes an organic material and a curing agent, and the through-hole insulating layer and the pixel defining layer both include an organic material, and Wherein, the method further comprises curing the transparent filler.

18. The method according to claim 17, wherein When curing the transparent filler, a UV curing scheme, a hot air curing scheme or a hot plate curing scheme is used.

19. The method according to claim 15, wherein The base substrate and the sealing substrate include glass, and the transparent filler has a refractive index of 1.

48.

20. The method of claim 15, further comprising: disposing an optical module below the base substrate to overlap the transparent filler; and Before forming the through-hole insulating layer, a data signal line is formed on the base substrate. Wherein, the opening of the through-hole insulating layer exposes the data signal line.

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