Display devices

Abstract

A display device is disclosed, which includes a substrate, a first electrode and a second electrode, a first insulating layer, a light-emitting element, a first contact electrode and a second contact electrode, a first active material layer, and a gate insulating layer, wherein the substrate has a light-emitting area and a non-light-emitting area, the first electrode and the second electrode are separated from each other on the substrate in the light-emitting area, the first insulating layer is located on the substrate in the light-emitting area and the non-light-emitting area and covers at least a portion of each of the first electrode and the second electrode, the light-emitting element is located between the first electrode and the second electrode, the first contact electrode is located on the first electrode and contacts one end portion of the light-emitting element, the second contact electrode is located on the second electrode and contacts the other end portion of the light-emitting element, the first active material layer is located on the first insulating layer in the non-light-emitting area and is electrically connected to the first contact electrode, and the gate insulating layer is located on the first active material layer.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of Korean Patent Application No. 10-2019-0145768, filed on November 14, 2019, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0003] The present disclosure relates to a display device. Background Art

[0004] With the development of multimedia, the importance of display devices is increasing. Therefore, various types of display devices such as organic light emitting display (OLED) devices or liquid crystal display (LCD) devices are being used.

[0005] A display device is a device that displays an image and includes a display panel (such as an organic light-emitting display panel or a liquid crystal display panel). In these display devices, the display device may include a light-emitting element as a light-emitting display panel. For example, a light-emitting diode (LED) may include an organic LED using an organic material as a fluorescent material, an inorganic LED using an inorganic material as a fluorescent material, and the like. Summary of the Invention

[0006] Aspects of the present disclosure provide a display device including a light emitting element and a transistor in which an active material layer includes an oxide semiconductor.

[0007] Aspects of the present disclosure also provide a display device whose manufacturing process is simplified by performing a process of forming the above-described transistor above a light emitting element.

[0008] It should be noted that aspects of the present disclosure are not limited to the above-mentioned aspects, and other aspects of the present disclosure will be apparent to those skilled in the art through the following description.

[0009] According to some exemplary embodiments of the present disclosure, a display device includes a substrate, a first electrode and a second electrode, a first insulating layer, a light-emitting element, a first contact electrode and a second contact electrode, and a first active material layer, a gate insulating layer, a gate electrode, and an electrode, wherein the substrate has a light-emitting region and a non-light-emitting region, the first electrode and the second electrode are separated from each other on the substrate in the light-emitting region, the first insulating layer is located on the substrate in the light-emitting region and the non-light-emitting region and covers at least a portion of each of the first electrode and the second electrode, the light-emitting element is located between the first electrode and the second electrode, the first contact electrode is located on the first electrode and contacts one end portion of the light-emitting element, the second contact electrode is located on the second electrode and contacts the other end portion of the light-emitting element, the first active material layer is located on the first insulating layer in the non-light-emitting region and is electrically connected to the first contact electrode, the gate insulating layer is located on the first active material layer, the gate electrode is located on the gate insulating layer and overlaps with the first active material layer, and the one electrode contacts at least one side of the first active material layer, wherein the first contact electrode and the second contact electrode are located at the same layer as the first active material layer.

[0010] In some example embodiments, the first active material layer, the first contact electrode, and the second contact electrode may include an oxide semiconductor.

[0011] In some exemplary embodiments, the first active material layer may include a first conductive region, a second conductive region, and a channel region, the channel region being located between the first conductive region and the second conductive region, and the first contact electrode and the second contact electrode may include the same material as the first conductive region.

[0012] In some exemplary embodiments, the light emitting element may not overlap with the first active material layer at least in a thickness direction.

[0013] In some example embodiments, the display device may further include a second insulating layer on the first contact electrode, the second contact electrode, and the first active material layer in the light emitting region and the non-light emitting region.

[0014] In some example embodiments, at least a portion of each of the first contact electrode and the second contact electrode may be located on the first insulating layer.

[0015] In some example embodiments, the second insulating layer may cover at least a portion of the first active material layer and the gate electrode.

[0016] In some exemplary embodiments, the one electrode may be located on the second insulating layer and may be in contact with the first contact electrode.

[0017] In some exemplary embodiments, the display device may further include a third insulating layer that is positioned on the light emitting element and exposes both end portions of the light emitting element.

[0018] In some example embodiments, the first contact electrode and the second contact electrode may be in contact with the third insulating layer.

[0019] In some exemplary embodiments, the display device may further include a color filter layer on the second insulating layer and overlapping the light emitting element.

[0020] In some exemplary embodiments, the display device may further include a reflective layer on the second insulating layer and overlapping the second electrode.

[0021] In some example embodiments, the display device may further include a light shielding layer between the first insulating layer and the substrate in the non-light emitting region and below the first active material layer.

[0022] In some example embodiments, the display device may further include a first bank and a second bank, the first bank being located between the first electrode and the substrate, and the second bank being located between the second electrode and the substrate.

[0023] In some example embodiments, the first electrode, the second electrode, and the light shielding layer may include a first metal layer on the substrate and a second metal layer on the first metal layer.

[0024] In some example embodiments, the first metal layer may have a width greater than that of the second metal layer, and the second metal layer may have a thickness greater than that of the first metal layer.

[0025] According to some exemplary embodiments of the present disclosure, a display device includes a substrate, a first electrode, a second electrode, a plurality of light-emitting elements, a first contact electrode, a second contact electrode, a first voltage line, a first semiconductor region, and an electrode, wherein the substrate has a light-emitting region and a non-light-emitting region, the first electrode is located on the substrate in the light-emitting region and extends in a first direction, the second electrode is separated from the first electrode in a second direction and extends in the first direction, the plurality of light-emitting elements are located between the first electrode and the second electrode, the first contact electrode extends in the first direction on the first electrode and contacts one end portion of each of the light-emitting elements, the second contact electrode extends in the first direction on the second electrode and contacts the other end portion of each of the light-emitting elements, the first voltage line is located in the non-light-emitting region and extends in the first direction, the first semiconductor region is located in the non-light-emitting region and extends in the second direction and partially overlaps with the first voltage line, and the one electrode overlaps one side of the first semiconductor region and the first contact electrode.

[0026] In some example embodiments, the display device may further include a light shielding layer located in the non-light emitting region and extending in the first direction to partially overlap the first semiconductor region.

[0027] In some exemplary embodiments, the first semiconductor region may contact the first voltage line through a first contact hole exposing the first voltage line in a region overlapping with the first voltage line, and the one electrode may contact one side of the first semiconductor region and the first contact electrode.

[0028] In some example embodiments, a pad electrode may be positioned on the first voltage line exposed through the first contact hole, and the first semiconductor region may be in contact with the pad electrode. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] The above and other aspects and features of the present disclosure will become more apparent by describing in detail exemplary embodiments of the present disclosure with reference to the accompanying drawings, in which:

[0030] Figure 1 is a schematic diagram of a display device according to some exemplary embodiments of the present disclosure;

[0031] Figure 2 is an illustration of some exemplary embodiments of the present disclosure Figure 1 The equivalent circuit diagram of a pixel;

[0032] Figure 3 is a layout diagram illustrating one pixel of a display device according to some exemplary embodiments of the present disclosure;

[0033] Figure 4 According to some exemplary embodiments of the present disclosure Figure 3 sectional views taken along lines IV-IV' and V-V';

[0034] Figure 5 is a schematic diagram of a light emitting element according to some exemplary embodiments of the present disclosure;

[0035] Figures 6 to 13 are cross-sectional views illustrating a process of manufacturing a display device according to some exemplary embodiments of the present disclosure;

[0036] Figure 14 is a partial cross-sectional view of a display device according to some exemplary embodiments of the present disclosure;

[0037] Figure 15 and Figure 16 is a diagram illustrating the manufacturing process according to some exemplary embodiments of the present disclosure. Figure 14 A cross-sectional view of a process for displaying a device;

[0038] Figure 17 is a partial cross-sectional view of a display device according to some exemplary embodiments of the present disclosure;

[0039] Figure 18 and Figure 19 is a diagram illustrating the manufacturing process according to some exemplary embodiments of the present disclosure. Figure 17 A cross-sectional view of a process for displaying a device;

[0040] Figure 20 is a partial cross-sectional view of a display device according to some exemplary embodiments of the present disclosure;

[0041] Figure 21 and Figure 22 is a diagram illustrating the manufacturing process according to some exemplary embodiments of the present disclosure. Figure 20 A cross-sectional view of a process for displaying a device;

[0042] Figure 23 is a partial cross-sectional view of a display device according to some exemplary embodiments of the present disclosure; and

[0043] Figures 24 to 27 is a partial cross-sectional view of a display device according to some exemplary embodiments of the present disclosure. DETAILED DESCRIPTION

[0044] Exemplary embodiments of the present disclosure will now be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the present disclosure are shown. However, the exemplary embodiments of the present disclosure may be implemented in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these exemplary embodiments are provided so that this disclosure will be thorough and complete and will fully convey the scope of the present disclosure to those skilled in the art.

[0045] It will also be understood that when a layer is referred to as being "on" another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may also be present. Throughout the specification, the same reference numerals refer to the same components.

[0046] It will be understood that although the terms "first," "second," etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, the first element discussed below may be referred to as the second element without departing from the teachings of the present disclosure. Similarly, the second element may also be referred to as the first element.

[0047] For ease of description, spatially relative terms such as "below," "beneath," "lower," "under," "above," "upper," etc. may be used herein to describe the relationship of one element or feature to another element(s) or feature(s) as shown in the accompanying drawings. It will be understood that such spatially relative terms are intended to encompass different orientations of the device in use or operation, in addition to the orientation depicted in the accompanying drawings. For example, if the device in the accompanying drawings is turned over, an element described as being "below," "beneath," or "below" another element or feature will then be oriented "above" the other element or feature. Thus, the exemplary terms "below" and "under" can encompass both above and below orientations. The device can be oriented in other ways (e.g., rotated 90 degrees or in other orientations), and the spatially relative descriptors used herein should be interpreted accordingly. In addition, it will be understood that when a layer is referred to as being "between" two layers, it may be the only layer between the two layers, or there may be one or more intervening layers.

[0048] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the present inventive concept. As used herein, the terms "substantially," "about," and similar terms are used as terms of approximation rather than as terms of degree, and are intended to allow for the inherent deviations in measurements or calculations that will be recognized by one of ordinary skill in the art.

[0049] As used herein, the singular forms "a" and "an" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that, when used in this specification, the terms "comprises" and / or "comprising" specify the presence of the features, wholes, steps, operations, elements, and / or components set forth, but do not exclude the presence or addition of one or more other features, wholes, steps, operations, elements, components, and / or groups thereof. As used herein, the term "and / or" includes any and all combinations of one or more of the relevant listed items. When a statement such as "at least one of..." follows an element of a list, it modifies the elements of the entire list rather than the individual elements in the list. In addition, when describing an embodiment of the present invention, "may" means "one or more embodiments of the present invention." In addition, the term "exemplary" is intended to mean an example or illustration. As used herein, the terms "use," "using," and "used" may be understood as synonymous with the terms "utilize," "utilizing," and "utilized," respectively.

[0050] It will be understood that when an element or layer is referred to as being “on,” “connected to,” “coupled to,” or “adjacent to” another element or layer, it can be directly on, directly connected to, directly coupled to, or directly adjacent to the other element or layer, or one or more intervening elements or layers may be present. In contrast, when an element or layer is referred to as being “directly on,” “directly connected to,” “directly coupled to,” or “immediately adjacent to” another element or layer, there are no intervening elements or layers.

[0051] Any numerical range described herein is intended to include all subranges with the same numerical precision contained within the described range. For example, a range of "1.0 to 10.0" is intended to include all subranges between the described minimum value of 1.0 and the described maximum value of 10.0 (and including this number), that is, having a minimum value equal to or greater than 1.0 and a maximum value equal to or less than 10.0, such as, for example, 2.4 to 7.6. Any maximum numerical limit described herein is intended to include all lower numerical limits contained therein, and any minimum numerical limit described in this specification is intended to include all higher numerical limits contained therein.

[0052] Hereinafter, exemplary embodiments will be described with reference to the accompanying drawings.

[0053] Figure 1 is a schematic plan view of a display device according to some exemplary embodiments of the present disclosure.

[0054] refer to Figure 1 The display device 10 displays a video or a still image. The display device 10 may refer to any electronic device that provides a display screen. For example, the display device 10 may include a television, a notebook, a monitor, a billboard, a device for the Internet of Things (IoT), a mobile phone, a smartphone, a tablet personal computer (PC), an electronic watch, a smartwatch, a watch phone, a head-mounted display, a mobile communication terminal, an electronic notebook, an e-book reader, a portable multimedia player (PMP), a navigation device, a game console, a digital camera, a camcorder, and the like that provides a display screen.

[0055] The display device 10 includes a display panel that provides a display screen. Examples of the display panel may include a light emitting diode (LED) display panel, an organic light emitting display panel, a quantum dot light emitting display panel, a plasma display panel, a field emission display panel, and the like. Hereinafter, although an example in which an LED display panel is used as an example of a display panel is described, the present disclosure is not limited thereto and may be applied to other display panels when the same technical spirit is applicable.

[0056] The shape of the display device 10 can be modified in various ways. For example, the display device 10 can have a shape such as a rectangular shape with long horizontal sides, a rectangular shape with long longitudinal sides, a square shape, a quadrilateral shape with rounded corners (vertices), other polygonal shapes, a circular shape, etc. The shape of the display area DA of the display device 10 can also be similar to the overall shape of the display device 10. Figure 1 , a display device 10 having a rectangular shape with long lateral sides and a display area DA are shown.

[0057] The display device 10 may include a display area DA and a non-display area NDA. The display area DA is an area where an image can be displayed, and the non-display area NDA is an area where no image is displayed. The display area DA may be referred to as an active area, and the non-display area NDA may be referred to as a non-active area.

[0058] The display area DA may generally occupy the central portion of the display device 10. The display area DA may include a plurality of pixels PX. The plurality of pixels PX may be arranged in a matrix. In a plan view, each pixel PX may be rectangular or square, but the present disclosure is not limited thereto, and may be a diamond shape with sides inclined relative to the first direction DR1. Each pixel PX may include one or more light-emitting elements that emit light within a specific wavelength range to display a specific color.

[0059] Although not shown in the drawings, the plurality of pixels PX may include a first pixel, a second pixel, and a third pixel, wherein the first pixel emits light of a first color, the second pixel emits light of a second color, and the third pixel emits light of a third color. In some exemplary embodiments, the first color, the second color, and the third color may be different from each other, such that the first color may be blue, the second color may be green, and the third color may be red. However, the present disclosure is not limited thereto, and the plurality of pixels PX may emit light of the same color.

[0060] Each of the pixels PX may include a driving transistor, at least one switching transistor, a light emitting element, and a capacitor. Figure 2 ) is turned on when a scan signal is applied, so the data line DTL (see Figure 2 ) can be applied to the gate electrode of the driving transistor. The driving transistor supplies a driving current to the light-emitting element according to the data voltage applied to its gate electrode, so that the light-emitting element can emit light. The driving transistor and at least one switching transistor can be a thin film transistor (TFT). The light-emitting element can emit light according to the driving current of the driving transistor. The light-emitting element can be an inorganic light-emitting diode including a semiconductor layer and an active layer. A capacitor can be used to constantly maintain the data voltage applied to the gate electrode of the driving transistor.

[0061] Figure 2 is an illustration of some embodiments of the present disclosure Figure 1 Equivalent circuit diagram of a pixel.

[0062] refer to Figure 2 , the pixel PX may include a driving transistor DT, a switching transistor ST, a light emitting element 300 and a capacitor Cst. Figure 2 Each pixel PX is shown to have a two-transistor-one-capacitor (2T1C) structure including one driving transistor DT, one switching transistor ST, and one capacitor Cst, but the present disclosure is not limited thereto. Each pixel PX may include more transistors and more capacitors.

[0063] Each of the driving transistor DT and the switching transistor ST may include one electrode, another electrode, and a gate electrode. One of the one electrode and the other electrode may be a source electrode, and the other may be a drain electrode.

[0064] Each of the driving transistor DT and the switching transistor ST may be formed of a thin film transistor (TFT). Figure 2 , each of the driving transistor DT and the switching transistor ST is shown as being formed of an N-type metal oxide semiconductor field effect transistor (MOSFET), but the present disclosure is not limited thereto. Each of the driving transistor DT and the switching transistor ST may be formed of a P-type MOSFET. In some embodiments, the positions of the source electrode and the drain electrode of each of the driving transistor DT and the switching transistor ST may be changed. Hereinafter, the case where the driving transistor DT and the switching transistor ST are formed of an N-type MOSFET will be described as an example.

[0065] The driving transistor DT supplies a driving current to the light emitting element 300 according to the data voltage applied to its gate electrode, so that the light emitting element 300 can emit light. For example, the gate electrode of the driving transistor DT can be connected to the source electrode of the switching transistor ST, the source electrode of the driving transistor DT can be connected to the first electrode of the light emitting element 300, and the drain electrode of the driving transistor DT can be connected to the first power line VDL, wherein the first power voltage VDD is applied through the first power line VDL.

[0066] When a scan signal is applied to the gate electrode of the switching transistor ST through the scan line SCL, the switching transistor ST is turned on so that the data voltage of the data line DTL can be applied to the gate electrode of the driving transistor DT. For example, the gate electrode of the switching transistor ST can be connected to the scan line SCL, the source electrode of the switching transistor ST can be connected to the gate electrode of the driving transistor DT, and the drain electrode of the switching transistor ST can be connected to the data line DTL.

[0067] The capacitor Cst may be connected between the gate electrode and the source electrode of the driving transistor DT. Therefore, the capacitor Cst may serve to substantially uniformly maintain the data voltage applied to the gate electrode of the driving transistor DT.

[0068] The light-emitting element 300 can emit light according to the driving current of the driving transistor DT. The light-emitting element 300 may include a first electrode and a second electrode. The first electrode of the light-emitting element 300 may be connected to the source electrode of the driving transistor DT, and the second electrode of the light-emitting element 300 may be connected to a second power line VSL, wherein a second power voltage VSS lower than the first power voltage VDD is applied through the second power line VSL.

[0069] Hereinafter, the structure of the display device 10 will be described in detail with reference to other drawings of the present disclosure.

[0070] Figure 3 is a layout diagram illustrating one pixel of a display device according to some exemplary embodiments of the present disclosure.

[0071] refer to Figure 3 Each pixel PX of the display device 10 may include a light emitting area EMA and a non-light emitting area NEA. The light emitting area EMA may be defined as an area where the light emitting element 300 included in the display device 10 is configured to emit light within a specific wavelength range. The light emitting element 300 includes an active layer 330 (e.g., Figure 5 ), and the active layer 330 may emit light within a specific wavelength range without directionality. For example, the light emitted from the active layer 330 of the light emitting element 300 may also be emitted in a direction toward the side surface (including both ends) of the light emitting element 300. The light emitting area EMA of each pixel PX may include an area in which the light emitting element 300 is provided and an area adjacent to the light emitting element 300, and light is emitted from the light emitting element 300 to the area adjacent to the light emitting element 300. In addition, the present disclosure is not limited thereto, and the light emitting area EMA may also include an area to which the light emitted by the light emitting element 300 is reflected or refracted by another component, element or member. A plurality of light emitting elements 300 may be provided in each pixel PX, and the area in which the light emitting element 300 is provided and the area adjacent to the light emitting element 300 may together form the light emitting area EMA.

[0072] The non-emission area NEA is the area of ​​each pixel PX excluding the emission area EMA. The non-emission area NEA can be defined as an area where no light-emitting element 300 is located and where light emitted from the light-emitting element 300 does not reach, thereby preventing light from being emitted from the non-emission area NEA. Furthermore, as shown in the accompanying drawings, multiple lines and circuit elements may be disposed in the non-emission area NEA. The drive transistor DT, switching transistor ST, capacitor Cst, and multiple lines of each pixel PX may be disposed in the non-emission area NEA.

[0073] According to some exemplary embodiments, the display device 10 includes a light emitting area EMA in which the light emitting element 300 is provided and a non-light emitting area NEA in which the light emitting element 300 is not provided, and the light emitting element 300 that emits light displayed by each pixel PX and the circuit element for driving the light emitting element 300 may be provided in the above-mentioned areas that are distinguished from each other. For example, in the display device 10 according to some exemplary embodiments, the light emitting element 300 that emits light and the circuit element for driving the light emitting element 300 may be provided in different areas, for example, in the light emitting area EMA and the non-light emitting area NEA, respectively, and may not overlap with each other in the thickness direction. The light emitting element 300 may not overlap with the first active material layer 126 of the driving transistor DT (for example, see the first active material layer 126 of the driving transistor DT) in the thickness direction at least. Figure 4 ) overlap, and therefore, the display device 10 can emit light upward or downward based on the area in which the light emitting element 300 is provided.

[0074] In some embodiments, the display device 10 may include a substrate 110 (eg, see Figure 4 ), a semiconductor layer, multiple conductive layers, and multiple light-emitting elements 300 are provided on the substrate 110. In some embodiments, multiple insulating layers may be provided between the semiconductor layer and the conductive layer. A light-emitting area EMA and a non-light-emitting area NEA are defined on the substrate 110, and the semiconductor layer, the conductive layer, and the light-emitting element 300 may be provided in a corresponding area of ​​the light-emitting area EMA and the non-light-emitting area NEA.

[0075] The first conductive layer may include a data line 1210, a first voltage line 1220, a second voltage line 1230, a first electrode 240, a second electrode 250, a light shielding layer 260, and a first capacitor electrode 1270. The data line 1210, the first voltage line 1220, the second voltage line 1230, the light shielding layer 260, and the first capacitor electrode 1270 are disposed in the non-emission area NEA, and the first electrode 240 and the second electrode 250 are disposed in the emission area EMA. The first electrode 240 and the second electrode 250 may be electrically connected to the light emitting element 300.

[0076] The data line 1210 may transmit a data signal to each pixel PX. The data line 1210 may be disposed at one side (e.g., left side) in the first direction DR1 in the non-emission area NEA based on the center portion of the pixel PX and may extend in the second direction DR2. The data line 1210 may extend to another pixel PX located adjacent to the pixel PX in the second direction DR2.

[0077] The first voltage line 1220 may transmit the first power voltage VDD to each pixel PX. For example, the first voltage line 1220 may be Figure 2 The first power line VDL is provided on the non-emission area NEA at one side of the data line 1210 (e.g., at the right side of the data line 1210) and may extend in the second direction DR2. The first voltage line 1220 may extend to another pixel PX positioned adjacent to the one pixel PX in the second direction DR2. The first voltage line 1220 may contact the first semiconductor region 2100 through a second contact hole CNT2, which will be described below, to transmit the first power voltage VDD to the drive transistor DT of each pixel PX.

[0078] The second voltage line 1230 may transmit the second power voltage VSS to each pixel PX. For example, the second voltage line 1230 may be Figure 2 The second power line VSL of FIG. 12 is provided on one side of the first voltage line 1220 (e.g., on the right side of the first voltage line 1220) in the non-emission area NEA and may extend in the second direction DR2. The second voltage line 1230 may extend to another pixel PX positioned adjacent to the above-mentioned one pixel PX in the second direction DR2. The second voltage line 1230 may contact the conductive line 4600 through the fifth contact hole CNT5 to be described below to transmit the second power voltage VSS to the second electrode 250 of each pixel PX (e.g., see FIG. 12). Figure 4 ).

[0079] The light shielding layer 260 may be disposed at one side of the second voltage line 1230 (e.g., at the right side of the second voltage line 1230) and may extend in the second direction DR2. In some embodiments, the light shielding layer 260 may be electrically connected to the source electrode of the driving transistor DT. The light shielding layer 260 is disposed adjacent to the first active material layer 126 of the driving transistor DT described below (e.g., see FIG. 1 ). Figure 4 ) to prevent light from being incident on the first active material layer 126 (or to reduce the amount of light incident on the first active material layer 126). As an example, the light shielding layer 260 may be made of an opaque metal material that blocks (or substantially blocks) light transmission.

[0080] The first electrode 240 can transmit the first power voltage VDD to the light emitting element 300. The first electrode 240 can be electrically connected to one end portion of the light emitting element 300 and the driving transistor DT, and can transmit the first power voltage VDD transmitted through the first voltage line 1220 to the light emitting element 300. The first electrode 240 can be provided at one side of the light emitting area EMA (for example, at the left side of the light emitting area EMA adjacent to the non-light emitting area NEA) and can extend in the second direction DR2. Unlike the first voltage line 1220, the first electrode 240 does not extend to another adjacent pixel PX in the second direction DR2 and can be provided in each pixel PX.

[0081] The second electrode 250 can transmit the second power voltage VSS to the light-emitting element 300. The second electrode 250 can be electrically connected to the other end portion of the light-emitting element 300 and the conductive line 4600, and can transmit the second power voltage VSS transmitted by the second voltage line 1230 to the light-emitting element 300. The second electrode 250 can be arranged at the other side of the light-emitting area EMA (for example, at the right side of the light-emitting area EMA separated from the non-light-emitting area NEA) and can extend in the second direction DR2. For example, the second electrode 250 and the first electrode 240 can be separated from each other and can face each other. The light-emitting element 300 can be arranged in the space between the first electrode 240 and the second electrode 250. Unlike the first voltage line 1220, the second electrode 250 does not extend to another adjacent pixel PX in the second direction DR2 and can be arranged in each pixel PX.

[0082] The plurality of electrodes 240 and 250 can be electrically connected to the light emitting element 300 and can receive a predetermined voltage (e.g., a set voltage) to allow the light emitting element 300 to emit light within a specific wavelength range. In some embodiments, at least a portion of each of the electrodes 240 and 250 can be used to form an electric field in the pixel PX, thereby aligning the light emitting element 300.

[0083] The plurality of electrodes 240 and 250 may include a first electrode 240 and a second electrode 250. In some exemplary embodiments, the first electrode 240 may be a separate pixel electrode for each pixel PX, and the second electrode 250 may be a common electrode commonly connected along each pixel PX. One of the first electrode 240 and the second electrode 250 may be an anode of the light-emitting element 300, and the other of the first electrode 240 and the second electrode 250 may be a cathode of the light-emitting element 300. However, the present disclosure is not limited thereto, and the reverse of the above description is also possible.

[0084] The first capacitor electrode 1270 may be connected to the first electrode 240 and may be disposed between the first electrode 240 and the light shielding layer 260 in the non-emission area NEA. The first capacitor electrode 1270 may overlap with the second capacitor electrode 4400 with the insulating layer therebetween. Thus, the first capacitor electrode 1270 and the second capacitor electrode 4400 may form Figure 2 capacitor Cst.

[0085] The first conductive layer may include one or more metals selected from molybdenum (Mo), aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), titanium (Ti), tantalum (Ta), tungsten (W), and copper (Cu). The first conductive layer may be formed as a single layer or a multilayer film. For example, the first conductive layer may be formed in a stacked structure of Ti / Al / Ti, Mo / Al / Mo, Mo / AlGe / Mo, Ti / Cu, etc.

[0086] In some embodiments, each of the electrodes 240 and 250 may include a transparent conductive material. As an example, each of the electrodes 240 and 250 may include a material such as indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), etc., but the present disclosure is not limited thereto. In some exemplary embodiments, each of the electrodes 240 and 250 may include a conductive material having high reflectivity. For example, each of the electrodes 240 and 250 may include a metal such as Ag, Cu, Al, etc. as a material having high reflectivity. In some embodiments, light incident on each of the electrodes 240 and 250 may be reflected and may be emitted in an upward direction relative to each pixel PX.

[0087] In addition, each of the electrodes 240 and 250 may be formed in a structure in which one or more layers of a transparent conductive material and a metal layer having high reflectivity are stacked, or may be formed as a single layer including a transparent conductive material and a metal layer. In some exemplary embodiments, each of the electrodes 240 and 250 may have a stacked structure of ITO / Ag / ITO / IZO, or may be an alloy including Al, Ni, lanthanum (La), etc. However, the present disclosure is not limited thereto.

[0088] A first insulating layer 510 (see, for example, Figure 4 ). The first insulating layer 510 may be disposed on the first conductive layer and the substrate 110 to cover the first conductive layer and the substrate 110, and may be disposed to partially expose the first electrode 240 and the second electrode 250. This will be described in detail below.

[0089] The light-emitting element 300 may be provided between the first electrode 240 and the second electrode 250 in the light-emitting region EMA. One end portion of the light-emitting element 300 may be electrically connected to the first electrode 240, and the other end portion of the light-emitting element 300 may be electrically connected to the second electrode 250. The light-emitting element 300 may be electrically connected to the first electrode 240 and the second electrode 250 through contact electrodes 361 and 362 to be described below.

[0090] A plurality of light-emitting elements 300 may be arranged to be spaced apart from each other and may be aligned to be substantially parallel to each other. The separation distance between the light-emitting elements 300 is not particularly limited. In some embodiments, a plurality of light-emitting elements 300 may be arranged adjacent to each other to form a group, and a plurality of other light-emitting elements 300 may be grouped in a state spaced apart at regular intervals and may have an uneven density, but may be oriented in one direction for arrangement. In some embodiments, the light-emitting element 300 may have a shape extending in one direction, and the direction in which the light-emitting element 300 extends may be substantially perpendicular to the direction in which each of the electrodes 240 and 250 extends. However, the light-emitting element 300 may be arranged obliquely, rather than being perpendicular or substantially perpendicular to the direction in which each of the electrodes 240 and 250 extends.

[0091] A semiconductor layer and contact electrodes 361 and 362 are provided on the light emitting element 300 and the first insulating layer 510. The semiconductor layer includes a first semiconductor region 2100, a second semiconductor region 2200, and a third semiconductor region 2300 provided in the non-emission area NEA, and the contact electrodes 361 and 362 include a first contact electrode 361 provided on the first electrode 240 and a second contact electrode 362 provided on the second electrode 250. The first semiconductor region 2100, the second semiconductor region 2200, and the third semiconductor region 2300 may form active material layers of the switching transistor ST and the driving transistor DT of each pixel PX.

[0092] The first semiconductor region 2100 may have a shape extending in the first direction DR1. As shown in the drawings, the first semiconductor region 2100 may extend in the first direction DR1 at the lower side of the pixel PX relative to the central portion of the pixel PX. The first semiconductor region 2100 may overlap at least the first voltage line 1220 and the light shielding layer 260. At least a portion of the first semiconductor region 2100 may be electrically connected to the first voltage line 1220 through a second contact hole CNT2, which exposes the first voltage line 1220 by penetrating the first insulating layer 510 in the region overlapping with the first voltage line 1220.

[0093] The second semiconductor region 2200 may be spaced apart from the first semiconductor region 2100 and may have a shape extending in the first direction DR1. As shown in the drawings, the second semiconductor region 2200 may extend in the first direction DR1 at an upper side of the pixel PX relative to the central portion of the pixel PX. The second semiconductor region 2200 may overlap at least the data line 1210. At least a portion of the second semiconductor region 2200 may be electrically connected to the data line 1210 via a first contact hole CNT1, which exposes the data line 1210 by penetrating the first insulating layer 510 in the region overlapping the data line 1210. In some embodiments, similar to the first semiconductor region 2100, the second semiconductor region 2200 may partially overlap the light shielding layer 260.

[0094] The third semiconductor region 2300 may be connected to the second semiconductor region 2200 and may branch from the second semiconductor region 2200 and extend in the second direction DR2 toward the first semiconductor region 2100. The third semiconductor region 2300 extends in the second direction DR2 at a position adjacent to the central portion of the pixel PX and may terminate such that the third semiconductor region 2300 is spaced apart from the first semiconductor region 2100. The third semiconductor region 2300 may be electrically connected to a gate electrode of a driving transistor DT to be described below.

[0095] The plurality of contact electrodes 361 and 362 may have a shape in which at least a portion of the plurality of contact electrodes 361 and 362 extends in one direction. The plurality of contact electrodes 361 and 362 may contact the light emitting element 300 and the electrodes 240 and 250, respectively, and the light emitting element 300 may receive electrical signals from the first electrode 240 and the second electrode 250 through the contact electrodes 361 and 362.

[0096] The contact electrodes 361 and 362 may include a first contact electrode 361 and a second contact electrode 362. The first contact electrode 361 and the second contact electrode 362 may be disposed on the first electrode 240 and the second electrode 250, respectively.

[0097] The first contact electrode 361 may be disposed on the first electrode 240, may extend in the second direction DR2, and may contact one end portion of each of the light-emitting elements 300. The second contact electrode 362 may be spaced apart from the first contact electrode 361 in the first direction DR1, may be disposed on the second electrode 250, may extend in the second direction DR2, and may contact the other end portion of each of the light-emitting elements 300. The first contact electrode 361 and the second contact electrode 362 may contact the first electrode 240 and the second electrode 250 that are exposed due to the absence of the first insulating layer 510. The light-emitting element 300 may be electrically connected to the first electrode 240 and the second electrode 250 through the first contact electrode 361 and the second contact electrode 362.

[0098] In some embodiments, the widths of the first and second contact electrodes 361 and 362 measured in one direction may be greater than the widths of the first and second electrodes 240 and 250 measured in the same direction. The first and second contact electrodes 361 and 362 may be arranged to cover side portions of the first and second electrodes 240 and 250. However, the present disclosure is not limited thereto, and in some embodiments, the first and second contact electrodes 361 and 362 may be arranged to cover only one side portion of the first and second electrodes 240 and 250. The contact electrodes 361 and 362 may include a conductive material. For example, the contact electrodes 361 and 362 may include ITO, IZO, ITZO, Al, etc. However, the present disclosure is not limited thereto.

[0099] In some embodiments, as described above, the active material layer of the first semiconductor region 2100 or the second semiconductor region 2200 (i.e., the driving transistor DT and the switching transistor ST) may include polysilicon or an oxide semiconductor. In some embodiments, the contact electrodes 361 and 362 may also include an oxide semiconductor having conductivity. The contact electrodes 361 and 362 and the first active material layer 126 of the driving transistor DT (see Figure 4 ) can be provided in substantially the same layer, and in some exemplary embodiments, the contact electrodes 361 and 362 and the first active material layer 126 can comprise the same material. In the display device 10 according to some exemplary embodiments, the driving transistor DT of each pixel PX is provided above the light-emitting element 300, and the first active material layer 126 of the driving transistor DT and the contact electrodes 361 and 362 in contact with the light-emitting element 300 can be formed in the same process. Therefore, the number of manufacturing processes for the display device 10 can be reduced. This will be described in detail below with reference to other drawings.

[0100] A second conductive layer is provided on the semiconductor layer. The second conductive layer may include a first gate electrode 4100, a second gate electrode 4200, a scan signal line 4300, a second capacitor electrode 4400, and a conductive line 4600, which are provided in the non-emission area NEA. The first gate electrode 4100, the second gate electrode 4200, and the second capacitor electrode 4400 may be provided in the non-emission area NEA, and the scan signal line 4300 and the conductive line 4600 may be provided throughout the non-emission area NEA and the emission area EMA.

[0101] The first gate electrode 4100 overlaps the first semiconductor region 2100, the third semiconductor region 2300, and the light shielding layer 260 in the non-emission area NEA. The first gate electrode 4100 may form a gate electrode of the driving transistor DT in the region overlapping with the first semiconductor region 2100. In some embodiments, the first gate electrode 4100 may contact the third semiconductor region 2300 through the third contact hole CNT3 in the region overlapping with the third semiconductor region 2300, and the gate electrode of the driving transistor DT may be connected to one electrode of the switching transistor ST.

[0102] The scan signal line 4300 can transmit a scan signal to the switching transistor ST of each pixel PX. The scan signal line 4300 can extend in the first direction DR1, and the second gate electrode 4200 can branch from the scan signal line 4300 and extend in the second direction DR2. In the drawings, the scan signal line 4300 extends in the first direction DR1 at the upper side of the pixel PX. The scan signal line 4300 can extend to another pixel PX located adjacent to the pixel PX in the first direction DR1.

[0103] The second gate electrode 4200 may branch from at least a portion of the scan signal line 4300 in the second direction DR2. The second gate electrode 4200 may be disposed to overlap a portion of the second semiconductor region 2200. The second gate electrode 4200 may form a gate electrode of the switching transistor ST. The scan signal line 4300 may transmit a scan signal to the switching transistor ST through the second gate electrode 4200.

[0104] The second capacitor electrode 4400 may be disposed in the non-emission area NEA to overlap with the first capacitor electrode 1270. The second capacitor electrode 4400 and the first capacitor electrode 1270 may form a capacitor Cst for each pixel PX. In some embodiments, the second capacitor electrode 4400 may overlap with one side of the second semiconductor region 2200 and may contact the second semiconductor region 2200 through the fourth contact hole CNT4.

[0105] The conductive line 4600 may be disposed at the lower side of the pixel PX relative to the central portion of the pixel PX, and may also be disposed in another adjacent pixel PX in the first direction DR1 by extending in the first direction DR1. The conductive line 4600 may overlap with the second voltage line 1230 and may contact the second voltage line 1230 through the fifth contact hole CNT5. In some embodiments, the conductive line 4600 may overlap with the second electrode 250 and may contact the second electrode 250 through the sixth contact hole CNT6. Therefore, the second power voltage (e.g., Figure 2 “VSS” in the figure) can be transmitted to the second electrode 250 through the conductive line 4600.

[0106] The second conductive layer may include one or more metals selected from the group consisting of Mo, Al, Pt, Pd, Ag, Mg, Au, Ni, Nd, Ir, Cr, Ca, Ti, Ta, W, and Cu. The second conductive layer may be formed as a single layer or a multilayer film. For example, the second conductive layer may be formed in a stacked structure of Ti / Al / Ti, Mo / Al / Mo, Mo / AlGe / Mo, Ti / Cu, etc.

[0107] A second insulating layer 520 (eg, see Figure 4 A second insulating layer 520 may be provided on the second conductive layer and the contact electrodes 361 and 362 to cover the second conductive layer and the contact electrodes 361 and 362, and contact holes CNT7 and CNT8 may be formed in the second insulating layer 520, penetrating the second insulating layer 520 and exposing portions of the contact electrodes 361 and 362 or portions of the first active material layer 126. This will be described in detail below.

[0108] A third conductive layer is provided on the second insulating layer 520. One electrode (e.g., one electrode 123) of the driving transistor DT and one electrode of the switching transistor ST are provided in the third conductive layer. In the drawings, only one electrode 123 of the driving transistor DT is shown, but the present disclosure is not limited thereto, and the third conductive layer may include one electrode of the switching transistor ST.

[0109] One electrode 123 of the driving transistor DT can be positioned to overlap one side of the first semiconductor region 2100 (i.e., one side of the first active material layer 126 of the driving transistor DT) in the non-emission area NEA, and can be positioned to overlap the first contact electrode 361 in the emission area EMA. One electrode 123 can contact a portion of the first semiconductor region 2100 through an eighth contact hole CNT8, which exposes a portion of the first semiconductor region 2100 by passing through the second insulating layer 520. In some embodiments, one electrode 123 can contact a portion of the first contact electrode 361 through a seventh contact hole CNT7, which exposes a portion of the first contact electrode 361 by passing through the second insulating layer 520. Therefore, the driving transistor DT of the pixel PX can be electrically connected to the first contact electrode 361, the first electrode 240, and the light-emitting element 300.

[0110] Hereinafter, the structure of the display device 10 will be described in detail with reference to another drawing.

[0111] Figure 4 According to some embodiments of the present disclosure Figure 3 Cross-sectional views taken along lines IV-IV' and V-V'.

[0112] Figure 4 Shown Figure 3 , to illustrate the arrangement of the driving transistor DT, the first electrode 240, the second electrode 250, and the light emitting element 300 of each pixel PX. For example, Figure 4 1 shows a cross section across a portion of the first semiconductor region 2100 and two end portions of a light emitting element 300 in the non-emission area NEA. In some embodiments, for ease of description, Figure 4 Some of the components shown in the Figure 3 The components in the figure are given different new reference numerals.

[0113] refer to Figure 4 The display device 10 includes a substrate 110, a plurality of banks 210, 220, and 230 disposed on the substrate 110, a first electrode 240, a second electrode 250, a light emitting element 300, a first contact electrode 361, a second contact electrode 362, and a driving transistor DT. In some embodiments, the display device 10 may include a first insulating layer 510 and a second insulating layer 520 disposed on the substrate 110.

[0114] In some embodiments, the substrate 110 may be an insulating substrate. The substrate 110 may be made of an insulating material such as glass, quartz, polymer resin, etc. The substrate 110 may be a rigid substrate, but may also be a flexible substrate that is bendable, foldable, or rollable.

[0115] A plurality of banks 210, 220, and 230 may be provided on the substrate 110. The plurality of banks 210, 220, and 230 include a first bank 210, a second bank 220, and a third bank 230 that are spaced apart from each other. A first conductive layer, which will be described below, may be provided over the plurality of banks 210, 220, and 230. Although not shown in the drawings, the first bank 210, the second bank 220, and the third bank 230 may each have a shape extending in one direction (e.g., in the second direction DR2) within each pixel PX.

[0116] The plurality of banks 210, 220, and 230 may each have a structure that at least partially protrudes from the substrate 110. The banks 210, 220, and 230 may each protrude upward from the plane on which the light-emitting element 300 is disposed, and at least some of the protruding portions may have an inclination. The shape of each of the banks 210, 220, and 230 is not particularly limited. Since the banks 210, 220, and 230 each have an inclined side surface protruding from the substrate 110, the light emitted from the light-emitting element 300 may be reflected at the inclined side surface of each of the banks 210 and 220. As will be described below, when the electrodes 240 and 250 disposed on the banks 210 and 220 include a material having a high reflectivity, the light emitted from the light-emitting element 300 may be reflected at the electrodes 240 and 250 located on the inclined side surfaces of the banks 210 and 220 to travel in an upward direction. For example, the banks 210 and 220 may function as reflective partition walls that reflect light emitted from the light emitting element 300 in an upward direction. However, the present disclosure is not limited thereto. In some embodiments, the plurality of banks 210, 220, and 230 may include polyimide (PI), but the present disclosure is not limited thereto.

[0117] In some exemplary embodiments, the plurality of banks 210, 220, and 230 may be made of a conductive material. In some embodiments, the banks 210, 220, and 230 may form a conductive layer, and the first conductive layer (e.g., the first electrode 240, the second electrode 250, and the light shielding layer 260) disposed on the banks 210, 220, and 230 may be integrated with the banks 210, 220, and 230 to form an integrated electrode 240 and 250 or light shielding layer 260. For example, when the third bank 230 includes a conductive material (e.g., a light shielding material such as metal), the separate light shielding layer 260 may be omitted, and the third bank 230 may perform the function of shielding light incident on the first active material layer 126.

[0118] The light shielding layer 260 of the first conductive layer, the first electrode 240 and the second electrode 250 are disposed on the banks 210 , 220 and 230 .

[0119] The light shielding layer 260 may be disposed on the third bank 230 in the non-emission area NEA. The first electrode 240 and the second electrode 250 may be disposed on the first bank 210 and the second bank 220, respectively, in the emission area EMA. Each of the light shielding layer 260, the first electrode 240, and the second electrode 250 may have a width greater than that of each of the banks 210, 220, and 230, and at least a portion of each of them may be disposed on the banks 210, 220, and 230, and the other portion of each of them may be disposed on the substrate 110.

[0120] The first insulating layer 510 may be disposed on the first electrode 240, the second electrode 250, and the light shielding layer 260. In some exemplary embodiments, the first insulating layer 510 may be disposed to expose the flat top surfaces of the first and second electrodes 240, 250, for example, at least portions of the first and second electrodes 240, 250 disposed on the top surfaces of the first and second banks 210, 220. Alternatively, the first insulating layer 510 may be disposed to cover the top surface of the light shielding layer 260. Unlike the first and second electrodes 240, 250, the entire surface of the light shielding layer 260 may be covered by the first insulating layer 510, without exposing its top surface. The first active material layer 126 of the driving transistor DT may be disposed on the light shielding layer 260, with the first insulating layer 510 located therebetween.

[0121] The first insulating layer 510 can protect the first electrode 240 and the second electrode 250 and insulate the first electrode 240 from the second electrode 250 in parallel (e.g., simultaneously). In some embodiments, the light emitting element 300 disposed on the first insulating layer 510 can be prevented from being damaged due to direct contact with other components. However, the shape and structure of the first insulating layer 510 are not limited thereto.

[0122] In some exemplary embodiments, the first insulating layer 510 may be formed so that a portion thereof disposed between the first electrode 240 and the second electrode 250 has a flat top surface. The flat top surface of the first insulating layer 510 extends in one direction toward the first and second electrodes 240 and 250, and the first insulating layer 510 may also be disposed in a region where the electrodes 240 and 250 overlap the inclined side surfaces of the first and second banks 210 and 220, respectively. Each of the contact electrodes 361 and 362 may contact the exposed regions of the first and second electrodes 240 and 250 and may smoothly contact the end portions of the light-emitting element 300 on the flat top surface of the first insulating layer 510.

[0123] However, the present disclosure is not limited thereto. A step may be formed in a portion of the first insulating layer 510 disposed between the first electrode 240 and the second electrode 250, such that a portion of the top surface of the first insulating layer 510 is recessed. The first insulating layer 510 may include an inorganic insulating material, and the portion of the top surface of the first insulating layer 510 disposed to cover the first electrode 240 and the second electrode 250 may be recessed due to a step formed by the electrodes 240 and 250 disposed below the first insulating layer 510. The light-emitting element 300 may be disposed on the first insulating layer 510 between the first electrode 240 and the second electrode 250, and an empty space may be formed between the light-emitting element 300 and the recessed top surface of the first insulating layer 510. The light-emitting element 300 may be disposed in a state partially separated from the top surface of the first insulating layer 510. The empty space between the top surface of the first insulating layer 510 and the light-emitting element 300 may be filled with the material of the second insulating layer 520 disposed on the light-emitting element 300.

[0124] The light emitting element 300 , the contact electrodes 361 and 362 , and the first active material layer 126 of the driving transistor DT are disposed on the first insulating layer 510 .

[0125] The light-emitting element 300 may be disposed on the first insulating layer 510 between the electrodes 240 and 250. However, the present disclosure is not limited thereto, and although not shown in the drawings, at least some of the light-emitting elements 300 disposed in the pixel PX may be disposed in an area other than the area between the electrodes 240 and 250. In some embodiments, the light-emitting element 300 may be disposed such that at least a portion thereof overlaps with the electrodes 240 and 250. Both end portions of the light-emitting element 300 may be disposed on an end portion of the first electrode 240 and an end portion of the second electrode 250, wherein the end portions of the first electrode 240 and the end portions of the second electrode 250 face each other.

[0126] The light emitting element 300 may include a plurality of layers arranged in a direction parallel to the substrate 110. The light emitting element 300 of the display device 10 according to some exemplary embodiments may have a shape extending in one direction and have a structure in which a plurality of semiconductor layers are sequentially arranged in one direction. In the light emitting element 300, the first semiconductor layer 310, the active layer 330, the second semiconductor layer 320, and the electrode layer 370 may be sequentially arranged in one direction, and the insulating film 380 may surround the outer surfaces of the first semiconductor layer 310, the active layer 330, the second semiconductor layer 320, and the electrode layer 370 (for example, see Figure 5). The light-emitting element 300 provided in the display device 10 can be arranged so that one of its extension directions is parallel to the substrate 110, and the multiple semiconductor layers included in the light-emitting element 300 can be sequentially arranged in a direction parallel to the top surface of the substrate 110. However, the present disclosure is not limited thereto. In some embodiments, when the light-emitting element 300 has a different structure, the multiple semiconductor layers can be arranged in a direction perpendicular to the substrate 110. The light-emitting element 300 will be described in detail below with reference to other drawings.

[0127] In addition, one end portion of the light-emitting element 300 may be in contact with the first contact electrode 361, and the other end portion thereof may be in contact with the second contact electrode 362. According to some exemplary embodiments, since the insulating film 380 is not formed on the extended end surface of the light-emitting element 300 in one direction and its extended end surface is exposed, the exposed end surface may be in contact with the first contact electrode 361 and the second contact electrode 362, which will be described below. However, the present disclosure is not limited to this. In some embodiments, at least a portion of the insulating film 380 is removed from the light-emitting element 300, and the removal of the insulating film 380 allows the side surfaces of the two end portions of the light-emitting element 300 to be partially exposed. In some embodiments, the exposed side surface of the light-emitting element 300 may be in contact with the first contact electrode 361 and the second contact electrode 362. However, the present disclosure is not limited to this.

[0128] In some embodiments, a third insulating layer 530_3 may be further provided on the light emitting element 300 (see Figure 20 The third insulating layer 530_3 may be provided to expose both end portions of the light emitting element 300 and may fix the light emitting element 300 so that the light emitting element 300 does not move during the manufacturing process of the display device 10. This will be described below.

[0129] The first active material layer 126 of the driving transistor DT is disposed on the first insulating layer 510 overlapping the light shielding layer 260. The first active material layer 126 may be a region of the first semiconductor region 2100 that overlaps the light shielding layer 260. The first active material layer 126 may include a first conductive region 126a, a second conductive region 126b, and a channel region 126c. The channel region 126c may be disposed between the first conductive region 126a and the second conductive region 126b. According to some exemplary embodiments, the first active material layer 126 may include an oxide semiconductor. In some embodiments, the oxide semiconductor may be an oxide semiconductor containing indium (In). In some exemplary embodiments, the oxide semiconductor may include ITO, IZO, indium gallium oxide (IGO), indium zinc tin oxide (IZTO), indium gallium tin oxide (IGTO), indium gallium zinc tin oxide (IGZTO), etc. However, the present disclosure is not limited thereto. The first conductive region 126a and the second conductive region 126b may be regions where at least a portion of the first active material layer 126 becomes conductive. Therefore, the first conductive region 126a and the second conductive region 126b may be source regions or drain regions of the first active material layer 126. When the first conductive region 126a is a source region, the second conductive region 126b may be a drain region, and when the first conductive region 126a is a drain region, the second conductive region 126b may be a source region. However, the present disclosure is not limited thereto.

[0130] However, the first active material layer 126 is not necessarily limited to the above description. In some embodiments, the first active material layer 126 may include polycrystalline silicon. In some embodiments, the first conductive region 126a may be a first doped region, and the second conductive region 126b may be a second doped region. Polycrystalline silicon can be formed by crystallizing amorphous silicon. Non-limiting examples of crystallization methods may include a rapid thermal annealing (RTA) method, a solid phase crystallization (SPC) method, an excimer laser annealing (ELA) method, a metal induced crystallization (MILC) method, a sequential lateral solidification (SLS) method, etc., but the present disclosure is not limited thereto. As another example, the first active material layer 126 may include single crystal silicon, low temperature polycrystalline silicon, amorphous silicon, etc.

[0131] In some embodiments, the first active material layer 126 or the first semiconductor region 2100 can be electrically connected to the first voltage line 1220. A pad electrode PAD can be provided on the first voltage line 1220 exposed by the second contact hole CNT2, and the first active material layer 126 of the driving transistor DT can contact the pad electrode PAD. Therefore, the driving transistor DT can be electrically connected to the first voltage line 1220.

[0132] A gate insulating layer 150 and a gate electrode 121 of the driving transistor DT are disposed on the first active material layer 126. The gate electrode 121 may overlap with the channel region 126c of the first active material layer 126, with the gate insulating layer 150 located between the gate electrode 121 and the channel region 126c of the first active material layer 126. As described above, the gate electrode 121 may be the first gate electrode 4100 of the third conductive layer.

[0133] Contact electrodes 361 and 362 are disposed on the first electrode 240 and the second electrode 250, respectively. The first contact electrode 361 is disposed on the first electrode 240, and the second contact electrode 362 is disposed on the second electrode 250. In some embodiments, at least a portion of the contact electrodes 361 and 362 is disposed on the first insulating layer 510. The first contact electrode 361 may contact an exposed region of the first electrode 240 on the first bank 210, and the second contact electrode 362 may contact an exposed region of the second electrode 250 on the second bank 220. As described above, the first contact electrode 361 and the second contact electrode 362 may contact at least one end portion of the light-emitting element 300 and be electrically connected to the first electrode 240 or the second electrode 250 to receive an electrical signal.

[0134] The second insulating layer 520 is provided on the contact electrodes 361 and 362 and the gate electrode 121 of the driving transistor DT. The second insulating layer 520 may be provided on the entire surface of the substrate 110 and may be provided to cover the contact electrodes 361 and 362, the gate electrode 121 of the driving transistor DT, and the light-emitting element 300. In some embodiments, as described above, a seventh contact hole CNT7 exposing a portion of the first contact electrode 361 by passing through the second insulating layer 520 and an eighth contact hole CNT8 exposing a side of the first active material layer 126 may be formed in the second insulating layer 520. One electrode 123 of the driving transistor DT may be provided on the second insulating layer 520 and may contact the first contact electrode 361 and the first conductive region 126a, which is a side of the first active material layer 126, through the contact holes CNT7 and CNT8, respectively.

[0135] A passivation layer 550 may be disposed on the second insulating layer 520 and one electrode 123 of the driving transistor DT. The passivation layer 550 may be used to protect components disposed on the substrate 110 from external environments.

[0136] The first insulating layer 510, the second insulating layer 520, and the passivation layer 550 described above may each include an inorganic insulating material or an organic insulating material. In some exemplary embodiments, the first insulating layer 510, the second insulating layer 520, and the passivation layer 550 may each include a silicon oxide (SiO x ), silicon nitride (SiNx ), silicon oxynitride (SiO x N y ), an inorganic insulating material such as aluminum oxide (Al2O3), aluminum nitride (AlN), etc. In addition, the first insulating layer 510, the second insulating layer 520, and the passivation layer 550 may each include an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, a polyimide resin, an unsaturated polyester resin, a polyphenylene resin, a polyphenylene sulfide resin, a benzocyclobutene, a cardo resin, a siloxane resin, a silsesquioxane resin, polymethyl methacrylate, polycarbonate, a polymethyl methacrylate-polycarbonate synthetic resin, etc. as an organic insulating material. However, the present disclosure is not limited thereto.

[0137] In some embodiments, an encapsulation layer EN may be provided on the passivation layer 550. In some exemplary embodiments, the encapsulation layer EN may be a thin film encapsulation layer including at least one encapsulation film. For example, the encapsulation layer EN may include a first inorganic film, an organic film, and a second inorganic film. The first inorganic film and the second inorganic film may each include silicon nitride, silicon oxide, or silicon oxynitride. The organic film may include an organic insulating material such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, a polyimide resin, an unsaturated polyester resin, a polyphenylene ether resin, a polyphenylene sulfide resin, or benzocyclobutene (BCB).

[0138] Figure 5 are schematic diagrams of light-emitting elements according to some exemplary embodiments of the present disclosure.

[0139] The light-emitting element 300 may be a light-emitting diode, and in some embodiments, may be an inorganic light-emitting diode having a size in the micrometer or nanometer unit and made of an inorganic material. The inorganic light-emitting diode can be aligned between two electrodes, where polarity is formed by forming an electric field in a specific direction between the two electrodes facing each other. The light-emitting element 300 can be aligned between the two electrodes due to the electric field formed between the two electrodes.

[0140] The light emitting element 300 according to some exemplary embodiments may have a shape extending in one direction. The light emitting element 300 may have the shape of a rod, a wire, a tube, etc. In some exemplary embodiments, the light emitting element 300 may have a cylindrical shape or a rod shape. However, the shape of the light emitting element 300 is not limited thereto, and the light emitting element 300 may have the shape of a cube, a rectangular parallelepiped, or a polygonal column such as a hexagonal column, or a shape extending in one direction and having a partially inclined outer surface. Therefore, the light emitting element 300 may have various shapes. The multiple semiconductor layers included in the light emitting element 300 to be described below may have a structure in which the semiconductor layers are sequentially arranged or stacked along one direction.

[0141] The light emitting element 300 may include a semiconductor layer doped with impurities of any conductive type (eg, p-type or n-type), and may receive an electrical signal applied from an external power source and emit light within a specific wavelength range.

[0142] According to some exemplary embodiments, the light-emitting element 300 can emit light within a specific wavelength range. In some exemplary embodiments, the active layer 330 can emit blue light having a central wavelength band in the range of 450nm to 495nm. However, the central wavelength band of blue light is not limited to the above range, and it should be understood that the central wavelength band includes all wavelength ranges that can be identified as blue light in the art. In addition, the light emitted from the active layer 330 of the light-emitting element 300 is not limited thereto, and the light can be green light having a central wavelength band in the range of 495nm to 570nm or red light having a central wavelength band in the range of 620nm to 750nm. Hereinafter, an example in which the light-emitting element 300 emits blue light will be described.

[0143] refer to Figure 5 The light emitting element 300 may include a semiconductor core and an insulating film 380 surrounding the semiconductor core, and the semiconductor core of the light emitting element 300 may include a first semiconductor layer 310, a second semiconductor layer 320, and an active layer 330. For example, the light emitting element 300 according to some exemplary embodiments may further include an electrode layer 370 provided on one surface of the first semiconductor layer 310 or the second semiconductor layer 320.

[0144] The first semiconductor layer 310 may be an n-type semiconductor. As an example, when the light emitting element 300 emits light in the blue wavelength range, the first semiconductor layer 310 may include a semiconductor having a chemical formula of Al x Ga y In 1-x-y N (0≤x≤1, 0≤y≤1 and 0≤x+y≤1) semiconductor material. For example, the semiconductor material may be one or more of AlGaInN, GaN, AlGaN, InGaN, AlN and InN doped with n-type impurities. The first semiconductor layer 310 may be doped with an n-type dopant. As an example, the n-type dopant may be Si, Ge, Sn, etc. In some exemplary embodiments, the first semiconductor layer 310 may be n-GaN doped with n-type Si. The length of the first semiconductor layer 310 may be in the range of 1.5 μm to 5 μm, but the present disclosure is not limited thereto.

[0145] The second semiconductor layer 320 is provided on the active layer 330 to be described below. The second semiconductor layer 320 may be a p-type semiconductor. As an example, when the light emitting element 300 emits light in the blue wavelength range or the green wavelength range, the second semiconductor layer 320 may include a semiconductor having a chemical formula of Al x Ga y In 1-x-y N (0≤x≤1, 0≤y≤1 and 0≤x+y≤1). For example, the semiconductor material may be one or more of AlGaInN, GaN, AlGaN, InGaN, AlN and InN doped with p-type impurities. The second semiconductor layer 320 may be doped with a p-type dopant. As an example, the p-type dopant may be Mg, Zn, Ca, selenium (Se), barium (Ba), etc. In some exemplary embodiments, the second semiconductor layer 320 may be p-GaN doped with p-type Mg. The length of the second semiconductor layer 320 may be in the range of 0.05 μm to 0.10 μm, but the present disclosure is not limited thereto.

[0146] In some embodiments, the first semiconductor layer 310 and the second semiconductor layer 320 are shown in the drawings as being formed of one layer, but the present disclosure is not limited thereto. According to some exemplary embodiments, the first semiconductor layer 310 and the second semiconductor layer 320 may further include a larger number of layers (e.g., a cap layer or a tensile strain barrier reduction (TSBR) layer) depending on the material of the active layer 330. This will be described below with reference to other drawings.

[0147] The active layer 330 is disposed between the first semiconductor layer 310 and the second semiconductor layer 320. The active layer 330 may include a material having a single quantum well structure or a multiple quantum well structure. When the active layer 330 includes a material having a multiple quantum well structure, the active layer 330 may have a structure in which quantum layers and well layers are alternately stacked. In response to an electrical signal applied through the first semiconductor layer 310 and the second semiconductor layer 320, the active layer 330 may emit light due to the combination of electron-hole pairs. As an example, when the active layer 330 emits light in the blue wavelength range, the active layer 330 may include a material such as AlGaN, AlGaInN, etc. For example, when the active layer 330 has a multiple quantum well structure in which quantum layers and well layers are alternately stacked, the quantum layers may include a material such as AlGaN or AlGaInN, and the well layers may include a material such as GaN or AlInN. In some exemplary embodiments, the active layer 330 includes AlGaInN as the quantum layers and AlInN as the well layers. As described above, the active layer 330 may emit blue light having a central wavelength band within the range of 450 nm to 495 nm.

[0148] However, the present disclosure is not limited thereto, and the active layer 330 may have a structure in which semiconductor materials having large band gap energy and semiconductor materials having small band gap energy are alternately stacked, depending on the wavelength range of the emitted light, or may include other Group III or Group V semiconductor materials. The light emitted by the active layer 330 is not limited to light in the blue wavelength band, and in some embodiments, the active layer 330 may also emit light in the red wavelength band or the green wavelength band. The length of the active layer 330 may be in the range of 0.05 μm to 0.10 μm, but the present disclosure is not limited thereto.

[0149] In some embodiments, light emitted from active layer 330 may be emitted not only to the outer surface in the longitudinal direction of light emitting element 300 but also to both side surfaces of light emitting element 300. Directivity of light emitted from active layer 330 is not limited to one direction.

[0150] The electrode layer 370 may be an ohmic contact electrode. However, the present disclosure is not limited thereto, and the electrode layer 370 may be a Schottky contact electrode. The light emitting element 300 may include at least one electrode layer 370. Although the light emitting element 300 is Figure 5 3. The light emitting element 300 is shown as including a single electrode layer 370, but the present disclosure is not limited thereto. In some embodiments, the light emitting element 300 may include a larger number of electrode layers 370, or may omit the electrode layer 370. Even when the number of electrode layers 370 is changed or when another structure is included, the description of the light emitting element 300 to be made below can also be applied in the same manner.

[0151] In the display device 10 according to some exemplary embodiments, when the light emitting element 300 is electrically connected to an electrode (eg, Figure 4 ” 240 ” and “ 250 ” shown in ) or contact electrodes (e.g., as Figure 4 ), the electrode layer 370 can reduce the resistance between the light emitting element 300 and the electrode or between the light emitting element 300 and the contact electrode. The electrode layer 370 may include a conductive metal. For example, the electrode layer 370 may include at least one of Al, Ti, In, Au, Ag, ITO, IZO, and ITZO. In addition, the electrode layer 370 may include a semiconductor material doped with n-type or p-type impurities. The electrode layer 370 may include the same material or different materials. The length of the electrode layer 370 may be in the range of 0.02 μm to 0.01 μm, but the present disclosure is not limited thereto.

[0152] The insulating film 380 is provided to surround some of the outer surfaces (e.g., side surfaces) of the semiconductor core and the electrode layer 370. In some exemplary embodiments, the insulating film 380 may be provided to surround at least the outer surface of the active layer 330 and may extend in one direction in which the light-emitting element 300 extends. The insulating film 380 may be used to protect the component. For example, the insulating film 380 may be formed to surround a portion of the side surface of the component and expose both end portions of the light-emitting element 300 in the longitudinal direction (e.g., the top surface of the electrode layer 370 may not have the insulating film 380 and may be exposed).

[0153] In the drawings, the insulating film 380 is shown as being formed to extend in the longitudinal direction of the light-emitting element 300 so as to cover from the main portion of the first semiconductor layer 310 to the side surface of the electrode layer 370, but the present disclosure is not limited thereto. Since the insulating film 380 only covers the outer surfaces of some semiconductor layers including the active layer 330 or only covers a portion of the outer surface of the electrode layer 370, the outer surface of the electrode layer 370 may be partially exposed. In some embodiments, in a region adjacent to at least one end portion of the light-emitting element 300, the top surface of the insulating film 380 may be formed to be rounded in cross-section.

[0154] The insulating film 380 may include SiO x 、SiN x 、SiO x N y , AlN, Al2O3, or the like. Thus, it is possible to prevent (or reduce the likelihood of) an electrical short circuit that may occur when the active layer 330 directly contacts an electrode through which an electrical signal is transmitted to the light-emitting element 300. Furthermore, since the insulating film 380 protects the outer surface of the light-emitting element 300 including the active layer 330, it is possible to prevent or reduce a decrease in luminous efficiency.

[0155] Furthermore, in some exemplary embodiments, the outer surface of the insulating film 380 may be surface treated. During the manufacture of the display device 10, the light-emitting elements 300 may be aligned by being injected onto the electrodes in a state dispersed in a predetermined (or set) ink. Here, to allow the light-emitting elements 300 to remain dispersed in the ink and not aggregate with adjacent light-emitting elements 300, the surface of the insulating film 380 may be treated with a hydrophobic or hydrophilic treatment.

[0156] The insulating film 380 can protect the semiconductor core including at least the active layer 330 of the light-emitting element 300. As described above, during the manufacturing process of the light-emitting element 300 and during the manufacturing process of the display device 10, the insulating film 380 can be partially etched to have a smaller thickness. When the insulating film 380 has a small thickness, the insulating film 380 may be etched and removed during the manufacturing process, or the semiconductor core (particularly the active layer 330) may be damaged. In order to prevent or reduce the possibility of damage to the active layer 330, the insulating film 380 of the light-emitting element 300 according to some exemplary embodiments may have a thickness greater than or equal to a predetermined level (e.g., a set level). In some exemplary embodiments, the thickness of the insulating film 380 may be in the range of 10 nm to 1.0 μm, but the present disclosure is not limited thereto. In some embodiments, the thickness of the insulating film 380 may be approximately 40 nm.

[0157] The light emitting element 300 may have a length h in the range of 1 μm to 10 μm or 2 μm to 6 μm, and in some embodiments, a length h in the range of 3 μm to 5 μm. In some embodiments, the diameter of the light emitting element 300 may be in the range of 300 nm to 700 nm, and the aspect ratio of the light emitting element 300 may be in the range of 1.2 to 100. However, the present disclosure is not limited thereto, and the plurality of light emitting elements 300 included in the display device 10 may have different diameters depending on the composition difference of the active layer 330. In some embodiments, the diameter of the light emitting element 300 may be in the range of about 600 nm.

[0158] In the display device 10 according to some exemplary embodiments, each pixel PX may include a light-emitting area EMA in which the light-emitting element 300 is disposed, and a non-light-emitting area NEA in which circuit elements (e.g., a driving transistor DT and a switching transistor ST) are disposed. The driving transistors DT are disposed above the light-emitting element 300 so as not to overlap with each other, so that light emitted from the light-emitting element 300 can travel in an upward or downward direction relative to the substrate 110. Therefore, depending on the direction of light emitted from the light-emitting element 300, the display device 10 may have a top emission structure or a bottom emission structure.

[0159] In some embodiments, in the display device 10, the contact electrodes 361 and 362 and the first active material layer 126 of the driving transistor DT are disposed on the first insulating layer 510. For example, the first active material layer 126 of the driving transistor DT may be disposed on the same layer as the contact electrodes 361 and 362. In some exemplary embodiments, the contact electrodes 361 and 362 may include the same material as the first active material layer 126, and the contact electrodes 361 and 362 and the first active material layer 126 may be produced in the same process during the manufacturing process of the display device 10. Therefore, the number of manufacturing processes of the display device 10 can be reduced. This will be described in detail below with reference to other exemplary embodiments.

[0160] Hereinafter, a process of manufacturing the display device 10 will be described with reference to other drawings.

[0161] Figures 6 to 13 are cross-sectional views illustrating a process of manufacturing a display device according to some exemplary embodiments of the present disclosure.

[0162] refer to Figures 6 and 7 First, a substrate 110 is prepared, and a plurality of banks 210, 220, and 230 are provided on the substrate 110, and a first electrode 240, a second electrode 250, and a light shielding layer 260 are provided on the plurality of banks 210, 220, and 230. The banks 210, 220, and 230 may include a first bank 210, a second bank 220, and a third bank 230. The arrangement of the first electrode 240, the second electrode 250, and the light shielding layer 260 is the same as described above, and therefore a detailed description thereof will be omitted because a person of ordinary skill in the art will be able to understand the arrangement from the perspective of FIG. Figure 4 The above-described components can be formed by patterning metal, inorganic material, organic material, etc. by performing a conventional mask process.

[0163] In some embodiments, in the drawings, the banks 210, 220, and 230, the electrodes 240 and 250, and the light shielding layer 260 are shown as being formed on the substrate 110 in separate processes, but the present disclosure is not limited thereto. In some exemplary embodiments, the banks 210, 220, and 230 may be omitted, and the electrodes 240 and 250 and the light shielding layer 260 may include a plurality of layers such that at least a portion thereof has a protruding shape.

[0164] Then, refer to Figure 8, a first insulating layer 510 is formed on the electrodes 240 and 250 and the light shielding layer 260, and the light emitting element 300 is aligned between the first electrode 240 and the second electrode 250. The first insulating layer 510 can be formed by forming the first insulating layer 510 over the substrate 110 to cover the top surfaces of the first electrode 240 and the second electrode 250, and then etching at least a portion of the first insulating layer 510 after aligning the light emitting element 300. The process of forming the first insulating layer 510 can be performed by a patterning process using a mask well known to those skilled in the art.

[0165] The light-emitting element 300 can be aligned between the electrodes 240 and 250 by spraying ink including the light-emitting element 300 onto the first and second electrodes 240 and 250 and applying an electrical signal to the first and second electrodes 240 and 250. When the electrical signal is applied to the first and second electrodes 240 and 250 sprayed with ink, an electric field is generated in the ink, and the position and orientation of the light-emitting element 300 are changed by the electric field, so that the light-emitting element 300 can be installed between the electrodes 240 and 250. Here, the light-emitting element 300 can be aligned so that its extension direction becomes constant according to the direction of the electric field. Subsequently, the solvent of the ink can be removed to position the light-emitting element 300 between the electrodes 240 and 250.

[0166] Next, refer to Figure 9 and Figure 10 , contact electrodes 361 and 362 are formed on the first electrode 240 and the second electrode 250. In the drawings, the second contact electrode 362 is formed first, and then the first contact electrode 361 is formed, but the present disclosure is not limited thereto. The first contact electrode 361 and the second contact electrode 362 may be formed in the same process, or the first contact electrode 361 may be formed first.

[0167] Then, refer to Figure 11 A first active material layer 126 is formed on the first insulating layer 510 overlapping the light shielding layer 260 , and a gate insulating layer 150 and a gate electrode 121 are formed on an upper portion of the first active material layer 126 .

[0168] As described above, the first contact electrode 361 and the second contact electrode 362 can be provided on the same layer as the first active material layer 126 of the driving transistor DT. When the contact electrodes 361 and 362 and the first active material layer 126 are made of different materials, the contact electrodes 361 and 362 and the first active material layer 126 can be formed in different processes as shown in the drawings. However, when the contact electrodes 361 and 362 and the first active material layer 126 include the same material (e.g., an oxide semiconductor), the contact electrodes 361 and 362 and the first active material layer 126 can be formed in the same process. For example, in the process of forming the conductive regions 126a and 126b and the channel region 126c in the first active material layer 126, the contact electrodes 361 and 362 including the oxide semiconductor can also be formed in parallel (e.g., simultaneously). In some embodiments, the process of forming the contact electrodes 361 and 362 and the first active material layer 126 can be performed in a single process, and the number of manufacturing processes for the display device 10 can be reduced.

[0169] Next, refer to Figures 12 to 13 as well as Figure 4 , forming a second insulating layer 520 and one electrode 123 of the driving transistor DT, and forming a passivation layer 550 and an encapsulation layer EN disposed over the second insulating layer 520 and the one electrode 123 , thereby manufacturing the display device 10 .

[0170] In the display device 10 according to some exemplary embodiments, the driving transistor DT disposed in the non-emission area NEA is disposed above the light emitting element 300, and the light emitting element 300 is disposed in the emission area EMA. Therefore, the contact electrodes 361 and 362 contacting the light emitting element 300 may be disposed on the same layer as the first active material layer 126 of the driving transistor DT, and the number of manufacturing processes in the process of forming the contact electrodes 361 and 362 and the first active material layer 126 may be reduced.

[0171] Hereinafter, various exemplary embodiments of the display device 10 will be described.

[0172] Figure 14 is a partial cross-sectional view of a display device according to some exemplary embodiments of the present disclosure.

[0173] refer to Figure 14In the display device 10_1 according to some exemplary embodiments, at least one of the contact electrodes 361_1 and 362_1 may include an oxide semiconductor and may include the same material as the first active material layer 126 of the driving transistor DT. In some embodiments, the contact electrodes 361_1 and 362_1 including the oxide semiconductor may be formed in the same process as the first active material layer 126 and thus may become conductive together with the first conductive region 126a. For example, the contact electrodes 361_1 and 362_1 may include the same material as the first conductive region 126a of the first active material layer 126. This exemplary embodiment is different from the reference Figure 4 The exemplary embodiment described is different in that the contact electrodes 361_1 and 362_1 include the same material as the first active material layer 126. Hereinafter, since those skilled in the art will be able to understand from the detailed description of the previous drawings, repeated descriptions will be omitted and the differences will be mainly described.

[0174] exist Figure 14 In the display device 10_1 of FIG. 1 , the first contact electrode 361_1 includes an oxide semiconductor and, therefore, may include the same material as the first conductive region 126a of the first active material layer 126. The contact electrodes 361_1 and 362_1 and the first active material layer 126 are disposed on the first insulating layer 510 and, therefore, may be disposed on substantially the same layer. During the manufacturing process of the display device 10_1, the contact electrode 361_1 or 362_1 that includes the same material as the first active material layer 126 may be formed in parallel (e.g., simultaneously) with the first active material layer 126. For example, when the first contact electrode 361_1 includes the same material as the first active material layer 126, the first contact electrode 361_1 and the first active material layer 126 may be formed in parallel (e.g., simultaneously) before or after the process of forming the second contact electrode 362_1 is performed. Therefore, one operation may be omitted in the process of forming the contact electrodes 361_1 and 362_1 and the first active material layer 126 , and the number of manufacturing processes of the display device 10_1 may be reduced.

[0175] Figure 15 and Figure 16 is a diagram showing the manufacture of some embodiments according to the present disclosure Figure 14 A cross-sectional view of the process of a display device.

[0176] First, refer to Figure 15, a first insulating layer 510 is formed on each of the electrodes 240 and 250 and the light shielding layer 260, and then an oxide semiconductor is formed, which forms the first contact electrode 361'_1 and the first active material layer 126. Subsequently, referring to Figure 16 , a portion of the oxide semiconductor becomes conductive to form the conductive regions 126a and 126b of the first active material layer 126 and the first contact electrode 361_1 disposed on the first electrode 240. In some exemplary embodiments, Figures 9 to 11 , the number of manufacturing processes can be reduced in the operation of forming the first contact electrode 361_1, the second contact electrode 362_1, and the first active material layer 126. By first forming the second contact electrode 362_1 including other materials and then forming the first contact electrode 361_1 and the first active material layer 126 in the same process, the number of manufacturing processes can be reduced.

[0177] In some embodiments, in the second contact electrode 362 , when an oxide semiconductor is included in the same manner as the first contact electrode 361 , the number of manufacturing processes may be further reduced.

[0178] Figure 17 is a partial cross-sectional view of a display device according to some exemplary embodiments of the present disclosure. Figure 18 and Figure 19 It shows the manufacturing Figure 17 A cross-sectional view of the process of a display device.

[0179] refer to Figure 17 In the display device 10_2 according to some exemplary embodiments, the first contact electrode 361_2 and the second contact electrode 362_2 may each include an oxide semiconductor, and may include the same material as the first active material layer 126 of the driving transistor DT. Figure 17 Exemplary embodiments and references Figure 14 The described exemplary embodiment differs in that the second contact electrode 362_2 also includes the same material as the conductive regions 126 a and 126 b of the first active material layer 126 .

[0180] refer to Figure 18 and Figure 19, a first insulating layer 510 is formed on the electrodes 240 and 250 and the light shielding layer 260, and then an oxide semiconductor is formed on the electrodes 240 and 250 and the light shielding layer 260, the oxide semiconductor forming the second contact electrode 362'_1, the first contact electrode 361'_1, and the first active material layer 126. Subsequently, the oxide semiconductor becomes conductive to form the conductive regions 126a and 126b of the first active material layer 126, the first contact electrode 361_2, and the second contact electrode 362_2. Figure 17 In an exemplary embodiment, Figure 15 and Figure 16 Compared to the operation shown in , the number of manufacturing processes in the operation of forming the first contact electrode 361_2, the second contact electrode 362_2, and the first active material layer 126 can be reduced. The first contact electrode 361_2, the second contact electrode 362_2, and the first active material layer 126 can all be formed in the same process by including the same material, so that the number of manufacturing processes of the display device 10_2 can be further reduced. Hereinafter, since those skilled in the art will be able to understand from the detailed description of the previous drawings, repeated descriptions will be omitted.

[0181] Figure 20 is a partial cross-sectional view of a display device according to some exemplary embodiments of the present disclosure.

[0182] refer to Figure 20 The display device 10_3 according to some exemplary embodiments may further include a third insulating layer 530_3 disposed on the light emitting element 300 . Figure 20 Exemplary embodiments and references Figure 4 The exemplary embodiment described is different in that the display device 10_3 further includes a third insulating layer 530_3. Hereinafter, repeated descriptions will be omitted, and the differences will be mainly described.

[0183] The third insulating layer 530_3 may be partially disposed on the light-emitting element 300 disposed between the first electrode 240 and the second electrode 250. The third insulating layer 530_3 may be disposed to partially surround the outer surface of the light-emitting element 300, thereby protecting the light-emitting element 300 and further serving to secure the light-emitting element 300 during the manufacturing process of the display device 10_3. According to some exemplary embodiments, the third insulating layer 530_3 may be disposed on the light-emitting element 300 and may expose one end portion and the other end portion of the light-emitting element 300. The exposed one end portion and the other end portion of the light-emitting element 300 may contact the contact electrodes 361_3 and 362_3, allowing the light-emitting element 300 to receive electrical signals from each of the electrodes 240 and 250. According to some exemplary embodiments, the contact electrodes 361_3 and 362_3 may contact the third insulating layer 530_3. This shape of the third insulating layer 530_3 can be formed by a patterning process using the material forming the third insulating layer 530_3 using a conventional mask process. The mask for forming the third insulating layer 530_3 has a length greater than that of the light emitting element 300 (see Figure 5 The width of the third insulating layer 530_3 is small, and the material forming the third insulating layer 530_3 is patterned to expose both end portions of the light emitting element 300. However, the present disclosure is not limited thereto.

[0184] Furthermore, in some exemplary embodiments, a portion of the material of the third insulating layer 530_3 may be disposed between the bottom surface of the light-emitting element 300 and the first insulating layer 510. The third insulating layer 530_3 may be formed to fill a space formed during the manufacturing process of the display device 10_3 between the first insulating layer 510 and the light-emitting element 300. Thus, the third insulating layer 530_3 may be formed to partially surround the outer surface of the light-emitting element 300. However, the present disclosure is not limited thereto.

[0185] In a plan view, the third insulating layer 530_3 may be disposed to extend in the second direction DR2 between the first electrode 240 and the second electrode 250. As an example, in a plan view, the third insulating layer 530_3 may have an island shape or a line shape on the substrate 110.

[0186] Figure 21 and Figure 22 is a diagram showing the manufacture of some embodiments according to the present disclosure Figure 20 A cross-sectional view of the process of a display device.

[0187] refer to Figure 21, a first insulating layer 510 is formed, and the light emitting element 300 is aligned between the first electrode 240 and the second electrode 250, and then a third insulating layer 530_3 is formed on the light emitting element 300. Since the third insulating layer 530_3 is provided to cover the light emitting element 300 aligned between the electrodes 240 and 250, the light emitting element 300 can be prevented from moving in subsequent processes. Such a shape of the third insulating layer 530_3 can be formed by forming a material constituting the third insulating layer 530_3 to cover all members provided on the substrate 110 and then partially patterning the material. The third insulating layer 530_3 can be formed before forming the first contact electrode 361_3 and the second contact electrode 362_3, and thus can be provided below the first contact electrode 361_3 and the second contact electrode 362_3. For example, according to Figure 20 In the exemplary embodiment, the third insulating layer 530_3 may be provided between the contact electrodes 361_3 and 362_3 and the light emitting element 300 .

[0188] Then, refer to Figure 22 After forming the third insulating layer 530_3, contact electrodes 361_3 and 362_3 are formed on the electrodes 240 and 250. The description thereof is the same as that described above.

[0189] In some embodiments, banks 210, 220, and 230 provided on substrate 110 may each have an inclined surface to reflect light emitted from light emitting element 300. However, in some exemplary embodiments, when electrodes 240 and 250 and light shielding layer 260 are each formed of a plurality of metal layers, another metal layer provided on one metal layer may have an inclined surface, and banks 210, 220, and 230 may be omitted.

[0190] Figure 23 is a partial cross-sectional view of a display device according to some exemplary embodiments of the present disclosure.

[0191] refer to Figure 23In the display device 10_4 according to some exemplary embodiments, the banks 210, 220, and 230 are omitted, and the first electrode 240_4, the second electrode 250_4, and the light shielding layer 260_4 may include multiple metal layers. The metal layers may include first metal layers 241_4, 251_4, and 261_4, and second metal layers 242_4, 252_4, and 262_4 disposed on the first metal layers 241_4, 251_4, and 261_4. The 1-1 metal layer 241_4 and the 2-1 metal layer 242_4 may form a first electrode 240_4, the 1-2 metal layer 251_4 and the 2-2 metal layer 252_4 may form a second electrode 250_4, and the 1-3 metal layer 261_4 and the 2-3 metal layer 262_4 may form a light shielding layer 260_4. Since the description of the 1-1 metal layer 241_4 and the 2-1 metal layer 242_4 of the first electrode 240_4 can be similarly applied to the second electrode 250_4 and the light shielding layer 260_4 , the embodiment of the first electrode 240_4 will be described below only as an example.

[0192] The 1-1 metal layer 241_4 is directly disposed on the substrate 110, and the 2-1 metal layer 242_4 is disposed on the 1-1 metal layer 241_4. According to some exemplary embodiments, the width of the 1-1 metal layer 241_4 may be greater than the width of the 2-1 metal layer 242_4, and the thickness of the 2-1 metal layer 242_4 may be greater than the thickness of the 1-1 metal layer 241_4. The 2-1 metal layer 242_4 may have a shape that protrudes upward relative to the top surface of the 1-1 metal layer 241_4, and may include an inclined surface (e.g., a side surface) to reflect light emitted from the light emitting element 300 in an upward direction, like the banks 210, 220, and 230.

[0193] During the process of manufacturing the display device 10_4, an alignment signal can be applied through the first metal layers 241_4, 251_4, and 261_4 to align the light emitting element 300, and while driving the display device 10_4, a driving signal can be transmitted through the second metal layers 242_4, 252_4, and 262_4. For example, in the second electrode 250_4, the conductive line 4600 (see Figure 3 ) may contact the 2-2 metal layer 252_4 of the second electrode 250_4, and the second power voltage VSS (see Figure 2) can be transmitted through the 2-2 metal layer 252_4, so that the second power voltage VSS can be transmitted to the second electrode 250_4 through the conductive line 4600. Similarly, the first contact electrode 361_4 and the second contact electrode 362_4 can contact the 2-1 metal layer 242_4 and the 2-2 metal layer 252_4, respectively, so that the electrical signal can be transmitted to the light emitting element 300.

[0194] The shapes of the first metal layers 241_4, 251_4 and 261_4 and the second metal layers 242_4, 252_4 and 262_4 can be formed by the following etch-back process: the material forming the first metal layers 241_4, 251_4 and 261_4 and the second metal layers 242_4, 252_4 and 262_4 is set on the entire surface of the substrate 110 and then the first metal layers 241_4, 251_4 and 261_4 and the second metal layers 242_4, 252_4 and 262_4 are etched in parallel (for example, simultaneously). The first metal layers 241_4, 251_4, and 261_4 and the second metal layers 242_4, 252_4, and 262_4 include materials with different etching selectivities, and the second metal layers 242_4, 252_4, and 262_4 are first etched to form inclined surfaces, and then the first metal layers 241_4, 251_4, and 261_4 are etched to form the electrodes 240_4 and 250_4 and the light shielding layer 260_4. Since those skilled in the art can understand from the detailed description of the previous drawings, the detailed description thereof will be omitted.

[0195] In some embodiments, the display device 10_4 may further include various components disposed to overlap with the light emitting element 300 .

[0196] Figures 24 to 27 is a partial cross-sectional view of a display device according to some exemplary embodiments of the present disclosure.

[0197] refer to Figure 24 , the display device 10_5 according to some exemplary embodiments may further include a color filter layer CF_5 disposed on the light emitting element 300. The color filter layer CF_5 may be disposed on the second insulating layer 520 so that the light emitted from the light emitting element 300 is incident on the color filter layer CF_5, and may be disposed at a position overlapping with the light emitting element 300 in the thickness direction. The color filter layer CF_5 may selectively transmit light of any first color and may block light of colors other than the first color from being transmitted. In some exemplary embodiments, the color filter layer CF_5 may include a colorant (such as a dye or pigment of the first color). In the present disclosure, the term colorant may refer to a dye or a pigment or both a dye and a pigment.

[0198] The colorant included in the color filter layer CF_5 may vary depending on the light emitted from the light emitting element 300. For example, when the light emitting element 300 emits red light, the color filter layer CF_5 may include a red colorant. Similarly, when the light emitting element 300 emits green light or blue light, the color filter layer CF_5 may include a green colorant or a blue colorant.

[0199] Light emitted from the light-emitting element 300 may be reflected from the inclined surface of each of the banks 210 and 220, directed toward the upper portions of the banks 210 and 220, and incident on the color filter layer CF_5. The color filter layer CF_5 may block light of different colors other than any first color from being transmitted, and each pixel PX may emit only light of any first color according to the colorant of the color filter layer CF_5. The color filter layer CF_5 may improve the color purity of the light emitted from the light-emitting element 300.

[0200] In some embodiments, the display device 10_5 includes a light-emitting area EMA and a non-light-emitting area NEA, and the light-emitting element 300 and the circuit elements are arranged in different areas. Therefore, in the display device 10_5, the light emitted from the light-emitting element 300 may also be emitted in a downward direction relative to the substrate 110 rather than in an upward direction.

[0201] refer to Figure 25 According to some exemplary embodiments, the display device 10_6 includes a transparent organic film OF_6 disposed on the second insulating layer 520 and overlapping the light-emitting element 300 in the thickness direction. One electrode 123_6 of the driving transistor DT may be disposed to cover the transparent organic film OF_6. The one electrode 123_6 may include a material having a high reflectivity to reflect light emitted from the light-emitting element 300 and transmitted through the transparent organic film OF_6 toward the substrate 110_6. Therefore, the display device 10_6 may have a bottom emission structure in which light is emitted toward the bottom surface of the substrate 110_6 on which the light-emitting element 300 is disposed.

[0202] In some embodiments, the display device 10_6 may further include an opposing substrate 115_6 spaced apart from and opposing the substrate 110_6, and a color filter layer CF_6 may be provided on one surface of the opposing substrate 115_6. Light emitted from the light-emitting element 300 may be reflected by one electrode 123_6 through the transparent organic film OF_6 and may travel to the bottom surface of the substrate 110_6 to be incident on the color filter layer CF_6. Only a portion of the light incident on the color filter layer CF_6 may be transmitted and emitted to the other surface of the opposing substrate 115_6, while another portion of the light incident on the color filter layer CF_6 may be blocked from transmission.

[0203] Furthermore, in some exemplary embodiments, the transparent organic film OF_6 may be omitted, and the color filter layer CF_6 may be disposed between the light emitting element 300 and one electrode 123_6 .

[0204] refer to Figure 26 In the display device 10_7 according to some exemplary embodiments, the color filter layer CF_7 may be disposed on the second insulating layer 520 to overlap the light emitting element 300 , and one electrode 123_7 of the driving transistor DT may be disposed to cover the color filter layer CF_7 . Figure 26 Exemplary embodiments and references Figure 25 The exemplary embodiment described is different in that the color filter layer CF_7 is provided in the region where the transparent organic film OF_6 is provided, and the opposite substrate 115_6 is omitted. Except for the above description, the description of other configurations is the same as that described above (eg, Figure 26 The substrate 110_7 and Figure 25 1 and 12 (the same as the substrate 110_6 in FIG), and therefore a detailed description of other configurations will be omitted.

[0205] The display device 10_7 may further include a reflective layer, wherein the reflective layer reflects light so that the light emitted from the light emitting element 300 is concentrated in a predetermined (or set) area.

[0206] refer to Figure 27 The display device 10_8 according to some exemplary embodiments may further include a reflective layer 127_8 disposed on the second insulating layer 520 to overlap the second electrode 250. The reflective layer 127_8 includes a material having high reflectivity and is disposed above the second electrode 250. Some of the light emitted from the light emitting element 300 may travel toward the reflective layer 127_8 and may be reflected by the reflective layer 127_8 to travel in an upward direction relative to the substrate 110. Figure 27 Exemplary embodiments and references Figure 4 The exemplary embodiment described differs in that a reflective layer 127_8 is also included. Figure 27 The other components shown in Figure 4 The corresponding elements shown in are the same, for example, Figure 27 One electrode 123_8 and Figure 4 One of the electrodes 123 is the same as the other, which a person skilled in the art will be able to understand from the detailed description of the previous drawings, and thus other repeated descriptions will be omitted.

[0207] In a display device according to some exemplary embodiments, each pixel includes a light emitting region in which a light emitting element is disposed and a non-light emitting region in which a circuit element is disposed, so that the display device can have a top emission structure or a bottom emission structure with respect to a substrate.

[0208] Furthermore, the active material layer of the transistor in the circuit element may be disposed above the light-emitting element. The contact electrode that contacts the light-emitting element and the electrode may be disposed on the same layer as the active material layer of the transistor and may be formed in the same process as the active material layer during the manufacturing process of the display device. Therefore, in display devices according to some exemplary embodiments, the number of manufacturing processes may be reduced.

[0209] At the end of the detailed description, it will be appreciated by those skilled in the art that various changes and modifications may be made to the exemplary embodiments without departing substantially from the principles of the present disclosure. Therefore, the exemplary embodiments of the present disclosure are used in a general and descriptive sense only and not for the purpose of limitation.

Claims

1. Display devices, including: A substrate having a light-emitting region and a non-light-emitting region; a first electrode and a second electrode spaced apart from each other on the substrate in the light emitting region; a first insulating layer located on the substrate in the light emitting region and the non-light emitting region and covering at least a portion of each of the first electrode and the second electrode; a light-emitting element, located between the first electrode and the second electrode; a first contact electrode and a second contact electrode, the first contact electrode being located on the first electrode and in contact with one end portion of the light emitting element, the second contact electrode being located on the second electrode and in contact with the other end portion of the light emitting element; as well as a first active material layer, a gate insulating layer, a gate electrode, and an electrode, wherein the first active material layer is located on the first insulating layer in the non-light-emitting region and is electrically connected to the first contact electrode, the gate insulating layer is located on the first active material layer, the gate electrode is located on the gate insulating layer and overlaps with the first active material layer, and the one electrode is in contact with at least one side of the first active material layer, The first contact electrode and the second contact electrode are located at the same layer as the first active material layer.

2. The display device according to claim 1, wherein The first active material layer, the first contact electrode, and the second contact electrode include an oxide semiconductor.

3. The display device according to claim 2, wherein The first active material layer includes a first conductive region, a second conductive region, and a channel region, wherein the channel region is located between the first conductive region and the second conductive region, and The first contact electrode and the second contact electrode include the same material as the first conductive region.

4. The display device according to claim 3, wherein The light emitting element does not overlap with the first active material layer at least in a thickness direction. 5 . The display device of claim 1 , further comprising a second insulating layer on the first contact electrode, the second contact electrode, and the first active material layer in the light emitting region and the non-light emitting region. The display device according to claim 5 , wherein: At least a portion of each of the first contact electrode and the second contact electrode is located on the first insulating layer.

7. The display device according to claim 6, wherein The second insulating layer covers at least a portion of the first active material layer and the gate electrode.

8. The display device according to claim 7, wherein The one electrode is located on the second insulating layer and contacts the first contact electrode. 9 . The display device according to claim 5 , further comprising a third insulating layer located on the light emitting element and exposing both end portions of the light emitting element.

10. The display device according to claim 9, wherein The first contact electrode and the second contact electrode are in contact with the third insulating layer. 11 . The display device according to claim 5 , further comprising a color filter layer on the second insulating layer and overlapping the light emitting element. 12 . The display device of claim 5 , further comprising a reflective layer on the second insulating layer and overlapping the second electrode. 13 . The display device according to claim 1 , further comprising a light shielding layer located between the first insulating layer and the substrate and below the first active material layer in the non-light emitting region. 14 . The display device of claim 13 , further comprising a first bank and a second bank, the first bank being located between the first electrode and the substrate, and the second bank being located between the second electrode and the substrate.

15. The display device according to claim 13, wherein The first electrode, the second electrode, and the light shielding layer include a first metal layer located on the substrate and a second metal layer located on the first metal layer.

16. The display device according to claim 15, wherein The first metal layer has a width greater than a width of the second metal layer, and the second metal layer has a thickness greater than a thickness of the first metal layer.

17. Display devices, including: A substrate having a light-emitting region and a non-light-emitting region; a first electrode located on the substrate in the light emitting region and extending in a first direction; a second electrode spaced apart from the first electrode in a second direction and extending in the first direction; a plurality of light-emitting elements, located between the first electrode and the second electrode; a first contact electrode extending in the first direction on the first electrode and in contact with one end portion of each of the light emitting elements; a second contact electrode extending in the first direction on the second electrode and in contact with the other end portion of each of the light emitting elements; a first voltage line located in the non-light-emitting area and extending in the first direction; a first semiconductor region located in the non-light emitting region and extending in the second direction and partially overlapping the first voltage line; as well as An electrode overlaps one side of the first semiconductor region and the first contact electrode. 18 . The display device according to claim 17 , further comprising a light shielding layer located in the non-light emitting region and extending in the first direction to partially overlap with the first semiconductor region.

19. The display device according to claim 18, wherein The first semiconductor region contacts the first voltage line through a first contact hole, the first contact hole exposing the first voltage line in a region overlapping the first voltage line, and The one electrode contacts one side of the first semiconductor region and the first contact electrode.

20. The display device according to claim 19, wherein A pad electrode is positioned on the first voltage line exposed through the first contact hole, and The first semiconductor region is in contact with the pad electrode.

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