Light-emitting display device

Abstract

A light-emitting display device includes: a substrate including a plurality of sub-pixels; an outer coating layer on the substrate and having a base portion and a protruding portion; a first electrode disposed to cover the base portion and a side portion of the protruding portion at the plurality of sub-pixels; a bank layer covering the first electrode and a portion of the outer coating layer; and a light-emitting layer and a second electrode on the first electrode and the bank layer at the plurality of sub-pixels. The first electrode includes a reflective layer and a transparent conductive layer on the reflective layer, the transparent conductive layer includes a first portion on the base portion and a second portion on a side surface of the protruding portion, and the thickness of the second portion is greater than the thickness of the first portion.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims the priority of Korean Patent Application No. 10-2019-0152920 filed in the Korean Intellectual Property Office on November 26, 2019, the disclosure of which is hereby expressly incorporated by reference into this application. Technical Field

[0003] The present disclosure relates to a light emitting display device, and more particularly, to a light emitting display device capable of improving light extraction efficiency and simultaneously improving a color gamut by suppressing a change in color coordinates. Background Art

[0004] Recently, as society develops toward an information-oriented society, the field of display devices for visually expressing electrical information signals has rapidly developed. Accordingly, various display devices having excellent performance in thickness, brightness, and low power consumption are being developed.

[0005] Among these various display devices, the light-emitting display device is a self-luminous display device, and unlike a liquid crystal display device having a separate light source, since the light-emitting display device does not require a separate light source, the light-emitting display device can be made light and thin. In addition, the light-emitting display device has an advantage in power consumption due to low voltage driving, and is excellent in color realization, response speed, viewing angle, and contrast (CR). Therefore, the light-emitting display device is expected to be used in various fields. Summary of the invention

[0006] The light emitted from the light-emitting layer of the light-emitting display device can be output to the outside of the light-emitting display device through various components of the light-emitting display device. However, among the light emitted from the light-emitting layer, there is light that is captured inside the light-emitting display device and does not exit the light-emitting display device, and thus the light extraction efficiency of the light-emitting display device may be problematic.

[0007] For example, due to losses in total reflection, optical waveguides, and surface plasmons, there is a limitation that some of the light emitted from the light emitting layer is captured inside the light emitting display device. Here, the loss in total reflection refers to the reduction in light extraction efficiency caused by light in the light emitted from the light emitting layer captured inside the light emitting display device by total reflection at the interface between the substrate and the air. The loss in the optical waveguide refers to the reduction in light extraction efficiency caused by light captured inside by total reflection at the interface of components inside the light emitting display device. The loss in the surface plasmon refers to the situation when light vibrates the free electrons on the metal surface due to the phenomenon that light present on the metal surface during light incidence and propagation is absorbed into the metal, thereby preventing the reflection or transmission of the light, resulting in a reduction in light extraction efficiency.

[0008] In order to address these limitations, the inventors of the present disclosure have invented a light-emitting display device having a new structure to improve the light extraction efficiency of the light-emitting display device by reducing total reflection and loss in an optical waveguide. For example, the inventors of the present disclosure form an outer coating having a base portion and a protruding portion protruding from the base portion, wherein the base portion has a flat upper surface, and the inventors of the present disclosure set an anode having a reflective layer on a side portion of the protruding portion and the base portion. Therefore, the reflective layer of the anode formed on the side portion of the protruding portion can be used as a side mirror, and some light captured inside the light-emitting display device by total reflection is extracted in a front direction of the light-emitting display device, thereby improving the light extraction efficiency of the light-emitting display device.

[0009] However, the inventors of the present disclosure have recognized that light additionally extracted from a light-emitting display device having the above-described structure may cause a change in color coordinates, which may be a problem.

[0010] For example, when the reflective electrode is disposed on the side portion of the protruding portion of the light-emitting display device, light is extracted upward from the light-emitting display device in the non-light-emitting region, thereby helping to improve the light extraction efficiency. However, the light extracted upward from the light-emitting display device by reflecting from the reflective electrode disposed in the non-light-emitting region exhibits a photoluminescence (PL) spectrum. Therefore, the additionally extracted light increases more in the long wavelength region than in the short wavelength region. Therefore, sub-pixels emitting light in the short wavelength range, such as blue sub-pixels, may have a problem in which color coordinate changes may occur.

[0011] Therefore, the inventors of the present disclosure have invented an improved light emitting display device having a novel structure, which is capable of preventing or minimizing color coordinate variation while improving light extraction efficiency.

[0012] An aspect of the present disclosure is to provide a light emitting display device capable of minimizing generation of light in a long wavelength region that may occur when an anode having a side mirror shape is used.

[0013] Another aspect of the present disclosure is to reduce the variation in the color coordinates of the extracted light.

[0014] Additional features and aspects will be described in the following description, and in part will become apparent from the description, or can be understood by practicing the inventive concepts provided herein. Other features and aspects of the inventive concepts can be realized and obtained by structures specifically pointed out in the written description or derived therefrom, its claims and the accompanying drawings.

[0015] According to one aspect of the present disclosure, a light-emitting display device may include: a substrate including a plurality of sub-pixels; an outer coating layer on the substrate and having a base portion and a protruding portion protruding from the base portion; a first electrode, the first electrode being arranged to cover the base portion and a side portion of the protruding portion at the plurality of sub-pixels; a dam layer covering the first electrode and a portion of the outer coating layer; and a light-emitting layer and a second electrode, the light-emitting layer and the second electrode being on the first electrode and the dam layer at the plurality of sub-pixels, wherein the first electrode includes a reflective layer and a transparent conductive layer on the reflective layer, the transparent conductive layer including a first portion on the base portion and a second portion on a side surface of the protruding portion, and wherein a thickness of the second portion is greater than a thickness of the first portion.

[0016] According to another aspect of the present disclosure, a light-emitting display device may include: a substrate having a plurality of sub-pixels, the plurality of sub-pixels including a light-emitting region and a non-light-emitting region; an outer coating having a protruding portion protruding from the non-light-emitting region; a light-emitting element including a first electrode in contact with the protruding portion, a second electrode, and a light-emitting layer at the light-emitting region between the first electrode and the second electrode; and a dam layer covering the first electrode and a portion of the protruding portion, wherein the first electrode includes a reflective layer and a transparent conductive layer on the reflective layer, the transparent conductive layer includes a first transparent conductive layer at the light-emitting region and a second transparent conductive layer on the protruding portion at the non-light-emitting region, and a thickness of the second transparent conductive layer is greater than a thickness of the first transparent conductive layer.

[0017] According to another aspect of the present disclosure, a light-emitting display device may include: an outer coating layer, the outer coating layer being on a substrate and having a base portion and a protruding portion protruding from the base portion; a first electrode, the first electrode being arranged to cover a side portion of the base portion and the protruding portion, the first electrode including a reflective layer and a transparent conductive layer on the reflective layer; a dam layer, the dam layer covering the outer coating layer and a portion of the first electrode; and a light-emitting layer and a second electrode on the first electrode and the dam layer.

[0018] Other systems, methods, features, and advantages will be or will become apparent to those skilled in the art upon study of the following figures and detailed description. It is intended that all such additional systems, methods, features, and advantages are included in this specification, are within the scope of the present disclosure, and are protected by the following claims. Nothing in this section shall be construed as limiting these claims. Further aspects and advantages are discussed below in conjunction with embodiments of the present disclosure. It should be understood that the foregoing general description and the following detailed description of the present disclosure are exemplary and illustrative, and are intended to provide further explanation of the claimed disclosure.

[0019] According to an exemplary embodiment of the present disclosure, light extraction efficiency of a light emitting display device may be improved by using an anode having a side mirror shape.

[0020] According to an exemplary embodiment of the present disclosure, the thickness of the anode is differently set in the light emitting region and the non-light emitting region, thereby suppressing a change in color coordinates due to additionally extracted light contributing to improving light efficiency, so that the color gamut may be improved.

[0021] It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the inventive concepts as claimed. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] The accompanying drawings, which may be included to provide a further understanding of the disclosure and are incorporated in and constitute a part of this specification, illustrate embodiments of the disclosure and together with the description serve to explain various principles of the disclosure.

[0023] Figure 1 is a plan view of a light emitting display device according to an exemplary embodiment of the present disclosure.

[0024] Figure 2 yes Figure 1 An enlarged plan view of area A.

[0025] Figure 3A It is along Figure 2 2. A cross-sectional view of the light-emitting display device taken along line IIIa-IIIa'.

[0026] Figure 3B It is along Figure 2 1. A cross-sectional view of the light-emitting display device taken along line IIIb-IIIb'.

[0027] Figure 4 is a cross-sectional view of a light emitting display device according to another exemplary embodiment of the present disclosure.

[0028] Figure 5 is a cross-sectional view of a light emitting display device according to another exemplary embodiment of the present disclosure.

[0029] Figure 6 is a cross-sectional view of a light emitting display device according to another exemplary embodiment of the present disclosure.

[0030] FIG. 7A to FIG. 7C is a graph illustrating light extraction spectra of a light emitting display device according to various exemplary embodiments of the present disclosure. DETAILED DESCRIPTION

[0031] By referring to the exemplary embodiments and drawings described in detail below, the advantages and features of the present disclosure and the methods for achieving the advantages and features will become clear. However, the present disclosure is not limited to the exemplary embodiments disclosed herein, but will be implemented in various forms. The exemplary embodiments are provided only by way of example so that those skilled in the art can fully understand the disclosure of the present disclosure and the scope of the present disclosure. Therefore, the present disclosure will be limited only by the scope of the appended claims.

[0032] The shapes, sizes, ratios, angles, numbers, etc. of the exemplary embodiments for describing the present disclosure shown in the drawings are only examples, and the present disclosure is not limited thereto. Throughout the specification, the same reference numerals generally represent the same elements. In addition, in the following description of the present disclosure, the detailed explanation of known related art may be omitted to avoid unnecessarily obscuring the subject matter of the present disclosure. Terms such as "including", "having" and "comprising" used herein are generally intended to allow the addition of other components unless used with the term "only". Unless otherwise expressly stated, any reference to the singular may include the plural.

[0033] Even if not explicitly stated, the components are interpreted as including the ordinary error range.

[0034] When terms such as “on,” “above,” “below,” and “near” are used to describe the positional relationship between two components, unless these terms are used together with the term “immediately” or “directly,” one or more components may be located between the two components.

[0035] When one element or layer is disposed on another element or layer, the other layer or another element may be directly on the other element or interposed therebetween.

[0036] Although the terms "first", "second", etc. are used to describe various components, these components are not limited by these terms and may not be limited in any order. These terms are only used to distinguish one component from other components. Therefore, the first component to be mentioned below may be the second component in the technical concept of the present disclosure.

[0037] Throughout the specification, like reference numerals generally refer to like elements.

[0038] The size and thickness of each component shown in the drawings are illustrated for convenience of description, and the present disclosure is not limited to the illustrated sizes and thicknesses of the components.

[0039] The features of the various embodiments of the present disclosure may be partially or completely adhered to or combined with each other, and may be interlocked and operated in various technical ways, and the embodiments may be performed independently of each other or in association with each other.

[0040] Hereinafter, exemplary embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

[0041] Figure 1 is a plan view of a light emitting display device according to an exemplary embodiment of the present disclosure. Figure 2 yes Figure 1 An enlarged plan view of area A. Figure 3A It is along Figure 2 2. A cross-sectional view of the light-emitting display device taken along line IIIa-IIIa'. Figure 3B It is along Figure 2 1. A cross-sectional view of the light-emitting display device taken along line IIIb-IIIb'.

[0042] exist Figure 2 In the figure, for the convenience of description, only a plurality of sub-pixels SPX are shown. Figure 3A is a cross-sectional view of a first sub-pixel SPX1 and a second sub-pixel SPX2, and Figure 3B is a cross-sectional view of the third sub-pixel SPX3. All components of the light emitting display device according to all embodiments of the present disclosure may be operatively coupled and configured.

[0043] Reference Figures 1 to 3B The light-emitting display device 100 may include a substrate 110, a thin film transistor 120, a light-emitting element 130, an overcoat layer 140, a bank layer 114, and an encapsulation part 150. The light-emitting display device 100 may be implemented as a top emission type light-emitting display device.

[0044] The substrate 110 includes a display area A / A and a non-display area N / A.

[0045] The display region A / A is a region where an image is displayed in the light-emitting display device 100. In the display region A / A, a plurality of display elements and various driving elements for driving the display elements may be provided. For example, the display element may be composed of a light-emitting element 130 including a first electrode 131, a light-emitting layer 132, and a second electrode 133. In addition, various driving elements for driving the display element, such as a thin film transistor, a capacitor, or wiring, may be provided in the display region A / A.

[0046] The display area A / A may include a plurality of sub-pixels SPX. The sub-pixel SPX is the smallest unit for configuring a screen, and each of the plurality of sub-pixels SPX may include a light emitting element 130 and a driving circuit. Each of the plurality of sub-pixels SPX may emit light of a different wavelength. For example, the plurality of sub-pixels SPX may include, for example, a first sub-pixel SPX1 as a red sub-pixel, a second sub-pixel SPX2 as a green sub-pixel, and a third sub-pixel SPX3 as a blue sub-pixel. However, the embodiment is not limited thereto, and the plurality of sub-pixels SPX may also include a white sub-pixel.

[0047] The driving circuit of the sub-pixel SPX is a circuit for controlling the driving of the light emitting element 130. For example, the driving circuit may be configured to include a thin film transistor 120 and a capacitor, but is not limited thereto.

[0048] The non-display area N / A is an area where no image is displayed, and various components for driving the plurality of sub-pixels SPX disposed in the display area A / A may be disposed. For example, a driver IC providing signals for driving the plurality of sub-pixels SPX, a flexible film, etc. may be disposed in the non-display area N / A.

[0049] The non-display area N / A may be as follows Figure 1 The area shown is an area surrounding the display area A / A, but is not limited thereto. For example, the non-display area N / A may be an area extending from the display area A / A.

[0050] Reference Figure 3A and Figure 3B , the substrate 110 may support and protect various components of the light-emitting display device 100. The substrate 110 may be formed of glass or a flexible plastic material. When the substrate 110 is formed of a plastic material, for example, the substrate may be formed of polyimide (PI). However, embodiments of the present disclosure are not limited thereto.

[0051] The buffer layer 111 is disposed on the substrate 110. The buffer layer 111 can improve the adhesion between the buffer layer 111 and the layers formed on the substrate 110, and can prevent the alkali component and the like from flowing out from the substrate 110. The buffer layer 111 can be formed of a single layer of silicon nitride (SiNx) or silicon oxide (SiOx), or a multilayer of silicon nitride (SiNx) or silicon oxide (SiOx), but is not limited thereto. The buffer layer 111 can be omitted based on the type and material of the substrate 110 and the structure and type of the thin film transistor 120.

[0052] The thin film transistor 120 is disposed on the substrate 110. The thin film transistor 120 may be used as a driving element of the light-emitting display device 100. The thin film transistor 120 includes a gate electrode 121, an active layer 122, a source electrode 123, and a drain electrode 124. In the light-emitting display device 100 according to the exemplary embodiment of the present disclosure, the thin film transistor 120 has a structure in which the active layer 122 is disposed on the gate electrode 121, and the source electrode 123 and the drain electrode 124 are disposed on the active layer 122. Therefore, the thin film transistor 120 has a bottom gate structure in which the gate electrode 121 is disposed at the bottom, but the embodiment is not limited thereto.

[0053] The gate electrode 121 of the thin film transistor 120 is disposed on the substrate 110. The gate electrode 121 may be any one of various metal materials, for example, may be any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy of two or more thereof, or a multilayer thereof, but the embodiment is not limited thereto.

[0054] The gate insulating layer 112 is disposed on the gate electrode 121. The gate insulating layer 112 is a layer for electrically insulating the gate electrode 121 and the active layer 122 from each other, and may be formed of an insulating material. For example, the gate insulating layer 112 may be formed of a single layer of silicon nitride (SiNx) or silicon oxide (SiOx) as an inorganic material, or may be formed of a multilayer of silicon nitride (SiNx) or silicon oxide (SiOx), but the embodiment is not limited thereto.

[0055] The active layer 122 is disposed on the gate insulating layer 112. The active layer 122 is disposed to overlap the gate electrode 121. For example, the active layer 122 may be formed of an oxide semiconductor, or formed of amorphous silicon (a-Si), polycrystalline silicon (poly-Si), an organic semiconductor, or the like.

[0056] The etch stopper 117 is disposed on the active layer 122. When the source electrode 123 and the drain electrode 124 are patterned by an etching method, the etch stopper 117 prevents damage to the surface of the active layer 122 due to plasma. A portion of the etch stopper 117 may overlap with the source electrode 123, and another portion of the etch stopper 117 may overlap with the drain electrode 124. However, the etch stopper 117 may be omitted.

[0057] The source electrode 123 and the drain electrode 124 are disposed on the active layer 122 and the etch stopper 117. The source electrode 123 and the drain electrode 124 are disposed in the same layer to be spaced apart from each other. The source electrode 123 and the drain electrode 124 may be electrically connected to the active layer 122 to contact the active layer 122. The source electrode 123 and the drain electrode 124 may be formed of any of various metal materials, for example, may be formed of any of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) or an alloy of two or more thereof, or formed of a multilayer thereof, but the embodiment is not limited thereto.

[0058] The overcoat layer 140 is disposed on the thin film transistor 120. The overcoat layer 140 is an insulating layer for protecting the thin film transistor 120 and smoothing the step difference of the layer disposed on the substrate 110. The overcoat layer 140 may be formed of one of acrylic-based resin, epoxy resin, phenolic resin, polyamide-based resin, polyimide-based resin, unsaturated polyester-based resin, polyphenyl resin, polyphenylene sulfide-based resin, benzocyclobutene, and photoresist, but the embodiment is not limited thereto.

[0059] The outer coating 140 includes a base portion 141 and a protruding portion 142. The base portion 141 and the protruding portion 142 may be Figure 3A and Figure 3B For example, the base portion 141 and the protrusion portion 142 may be formed of the same material and simultaneously formed through the same process such as a mask process, but the embodiment is not limited thereto.

[0060] The base portion 141 is disposed on the thin film transistor 120. The upper surface of the base portion 141 has a surface parallel to the substrate 110. Therefore, the base portion 141 can flatten a step difference caused by a component disposed below the base portion 141. For example, the base portion 141 can flatten a step difference that may be caused by the thin film transistor 120 disposed below the overcoat layer 140.

[0061] The protrusion 142 is disposed on the base portion 141. The protrusion 142 is disposed in the non-light emitting area NEA. The protrusion 142 is formed integrally with the base portion 141 and is formed to protrude from the base portion 141. Therefore, the upper surface of the protrusion 142 may be smaller than the lower surface thereof. However, the embodiment is not limited thereto.

[0062] The protruding portion 142 includes an upper surface and a side surface. The upper surface of the protruding portion 142 may be a surface of the uppermost portion of the protruding portion 142, and may be a surface substantially parallel to the base portion 141 or the substrate 110. The side surface of the protruding portion 142 may be a surface connecting the upper surface of the protruding portion 142 with the base portion 141.

[0063] Figure 3A and Figure 3B The outer coating 140 is shown to include a base portion 141 having a flat upper surface and a protruding portion 142 protruding from the base portion 141. However, as long as the outer coating 140 has a shape reflecting the base portion 141 and the protruding portion 142, the detailed configuration of the outer coating 140 is not limited to the base portion 141 and the protruding portion 142 and may be implemented variously.

[0064] The light emitting element 130 is disposed on the overcoat layer 140. The light emitting element 130 includes a first electrode 131, a light emitting layer 132, and a second electrode 133.

[0065] The first electrode 131 is disposed on the outer coating layer 140 to cover the base portion 141 and the side portion of the protruding portion 142. For example, the first electrode 131 is disposed on the upper surface of the base portion 141 on which the protruding portion 142 is not disposed, on the side portion of the protruding portion 142, and on a portion of the upper surface of the protruding portion 142. And, the first electrode 131 is disposed along the shapes of the base portion 141 and the protruding portion 142. However, the embodiment is not limited thereto. For example, the first electrode 131 may be disposed only on the upper surface of the base portion 141 on which the protruding portion 142 is not formed and on the side portion of the protruding portion 142.

[0066] The first electrode 131 includes a reflective layer 131A electrically connected to the thin film transistor 120 and a transparent conductive layer 131B disposed on the reflective layer 131A.

[0067] The reflective layer 131A of the first electrode 131 is disposed on the outer coating layer 140. Since the light-emitting display device 100 according to the exemplary embodiment of the present disclosure is a top-emitting type light-emitting display device, the reflective layer 131A can reflect the light emitted from the light-emitting element 130 upward. The light generated from the light-emitting layer 132 of the light-emitting element 130 may not only be emitted upward, but also be emitted laterally. The light emitted laterally may be guided to the inside of the light-emitting display device 100, and may be captured inside the light-emitting display device 100 by total reflection. The light captured inside the light-emitting display device 100 may travel in the inward direction of the light-emitting display device 100 and disappear therein. Therefore, the reflective layer 131A is disposed below the light-emitting layer 132, and is disposed to cover the side portion of the protruding portion 142, whereby the traveling direction of the light traveling toward the side portion of the light-emitting layer 132 can be changed to the front direction.

[0068] The reflective layer 131A may be formed of a metal material, and for example, may be formed of a metal material such as aluminum (Al), silver (Ag), copper (Cu), or a magnesium-silver alloy (Mg:Ag), but the embodiment is not limited thereto. The reflective layer 131A may be electrically connected to the drain electrode 124 through a contact hole in the overcoat layer 140. Also, the embodiment is not limited thereto. For example, the reflective layer 131A may be electrically connected to the source electrode 123 through a contact hole in the overcoat layer 140.

[0069] The transparent conductive layer 131B is disposed on the reflective layer 131A. The transparent conductive layer 131B is disposed on the reflective layer 131A and is electrically connected to the drain electrode 124 through the reflective layer 131A. The transparent conductive layer 131B may be formed of a conductive material having a high work function to provide holes to the light emitting layer 132. For example, the transparent conductive layer 131B may be formed of a transparent conductive oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), zinc oxide (ZnO), and tin oxide (TO), but the embodiment is not limited thereto. For example, when the transparent conductive layer 131B is formed of indium tin oxide (ITO), the refractive index of the transparent conductive layer 131B may be about 1.8.

[0070] Figure 3A and Figure 3BIt is shown that the first electrode 131 includes a reflective layer 131A and a transparent conductive layer 131B disposed on the reflective layer 131A. However, the first electrode 131 may also include an additional transparent conductive layer disposed between the reflective layer 131A and the outer coating 140. For example, the first electrode 131 may have a structure in which an additional transparent conductive layer, the reflective layer 131A, and the transparent conductive layer 131B are sequentially stacked. In this case, the additional transparent conductive layer may be formed of the same material as the transparent conductive layer 131B, and the adhesion between the first electrode 131 and the outer coating 140 may be enhanced. In addition, the thickness of the additional transparent conductive layer on the upper surface of the base portion 141 on which the protruding portion is not disposed may be the same as the thickness of the transparent conductive layer 131B, but the embodiment is not limited thereto.

[0071] The bank layer 114 is disposed on the first electrode 131 and the overcoat layer 140. The bank layer 114 may cover a portion of the first electrode 131 and the overcoat layer 140 of the light emitting element 130 in the plurality of sub-pixels SPX, and may include a non-light emitting area NEA. For example, in the non-light emitting area NEA, the bank layer 114 may be disposed on the first electrode 131 to block the generation of light in the non-light emitting area NEA. Since the bank layer 114 is not disposed in the light emitting area EA, the light emitting layer 132 may be directly located on the first electrode 131, whereby light may be generated from the light emitting layer 132.

[0072] The bank layer 114 may be formed of an organic material. For example, the bank layer 114 may be formed of an organic material such as polyimide, acrylic, or benzocyclobutene-based resin, but the embodiment is not limited thereto. For example, the bank layer 114 is formed using polyimide, and the refractive index of the bank layer 114 may be about 1.6.

[0073] The light emitting layer 132 is disposed to contact the first electrode 131 in the plurality of sub-pixels SPX. For example, the light emitting layer 132 may be disposed in the light emitting area EA on the first electrode 131. For example, the light emitting layer 132 may be disposed to be surrounded by the bank layer 114.

[0074] The light-emitting layer 132 is a layer for emitting light of a specific color, and has a structure separated for each sub-pixel SPX. For example, the light-emitting layer 132 provided in the first sub-pixel SPX1 as a red sub-pixel is a red light-emitting layer, the light-emitting layer 132 provided in the second sub-pixel SPX2 as a green sub-pixel is a green light-emitting layer, and the light-emitting layer 132 provided in the third sub-pixel SPX3 as a blue sub-pixel is a blue light-emitting layer. The light-emitting layer 132 provided in the first sub-pixel SPX1, the light-emitting layer 132 provided in the second sub-pixel SPX2, and the light-emitting layer 132 provided in the third sub-pixel SPX3 can be provided separately. Each light-emitting layer 132 can be pattern-deposited in each light-emitting area EA by using a mask opened in each sub-pixel SPX, such as a fine metal mask (FMM). The light-emitting layer 132 can also include various layers, such as a hole transport layer, a hole injection layer, a hole blocking layer, an electron injection layer, an electron transport layer, an electron blocking layer, etc. Various organic layers can be formed as a single layer in all sub-pixels SPX. In addition, the light emitting layer 132 may be an organic light emitting layer formed of an organic material, but is not limited thereto. For example, the light emitting layer 132 may be formed of a quantum dot light emitting layer or a micro LED.

[0075] In the plurality of sub-pixels SPX, the second electrode 133 is disposed on the light emitting layer 132 and the bank layer 114. For example, the second electrode 133 is disposed in contact with the light emitting layer 132 in the light emitting area EA and may be disposed along the shape of the light emitting layer 132. In addition, the second electrode 133 may be disposed in contact with the bank layer 114 in the non-light emitting area NEA and may be disposed along the shape of the bank layer 114.

[0076] The second electrode 133 provides electrons to the light emitting layer 132. The second electrode 133 may be formed of a metal material such as silver (Ag), copper (Cu), and magnesium-silver alloy (Mg:Ag), or may be formed of a transparent conductive oxide or an alloy of ytterbium (Yb). However, the embodiment is not limited thereto.

[0077] Since the light-emitting display device 100 according to the exemplary embodiment of the present disclosure is a top-emitting light-emitting display device, the light-emitting display device can be manufactured so that a microcavity is realized. For example, in the light-emitting display device 100 according to the exemplary embodiment of the present disclosure, constructive interference with respect to light emitted from the light-emitting layer 132 can be achieved by adjusting the distance between the reflective layer 131A and the second electrode 133, thereby improving light efficiency. Therefore, in the light-emitting display device 100 according to the exemplary embodiment of the present disclosure, a microcavity can be realized by configuring the thickness value of the light-emitting layer 132 differently for each sub-pixel SPX.

[0078] The encapsulation part 150 is disposed on the second electrode 133. The encapsulation part 150 is disposed on the outer coating layer 140 and the light emitting element 130. The encapsulation part 150 can block oxygen and moisture from penetrating from the outside of the light emitting display device 100 to the inside of the light emitting display device 100. For example, when the light emitting display device 100 is exposed to moisture or oxygen, a pixel shrinkage phenomenon in which the light emitting area EA is reduced may occur, or a defect in which a black spot appears in the light emitting area EA may occur. Therefore, the encapsulation part 150 can block oxygen and moisture to protect the light emitting display device 100.

[0079] The encapsulation part 150 includes a first encapsulation layer 151 , a second encapsulation layer 152 , and a third encapsulation layer 153 .

[0080] The first encapsulation layer 151 is disposed on the second electrode 133 and suppresses penetration of moisture or oxygen. The first encapsulation layer 151 may be formed of an inorganic material such as silicon nitride (SiNx), silicon oxynitride (SiNxOy), aluminum oxide (AlyOz), etc., but the embodiment is not limited thereto.

[0081] The second encapsulation layer 152 is disposed on the first encapsulation layer 151 to planarize the surface of the first encapsulation layer 151. In addition, the second encapsulation layer 152 can cover foreign matter or particles that may appear during the manufacturing process. The second encapsulation layer 152 can be formed of an organic material such as silicon oxycarbide (SiOxCz), acrylic acid or epoxy resin, etc., but the embodiment is not limited thereto.

[0082] The third encapsulation layer 153 is disposed on the second encapsulation layer 152, and similar to the first encapsulation layer 151, the third encapsulation layer 153 can prevent or inhibit the penetration of moisture or oxygen. The third encapsulation layer 153 can be formed of an inorganic material such as silicon nitride (SiNx), silicon nitride oxide (SiNxOy), silicon oxide (SiOx), aluminum oxide (AlyOz), etc., but the embodiment is not limited thereto.

[0083] In the light-emitting display device of the related art, light captured and lost inside the light-emitting display device among the light emitted from the light-emitting layer has become a factor that reduces light efficiency. For example, among the light emitted from the light-emitting layer, due to the loss in total reflection or the loss in the optical waveguide, there may be light that is not extracted to the outside of the light-emitting display device, so that the light extraction efficiency of the light-emitting display device is reduced. For example, in the light-emitting display device of the related art, since a first electrode formed on an outer coating having a flat upper surface is used, light emitted at a low emission angle among the light emitted from the light-emitting layer may be captured in the light-emitting display device due to the loss in total reflection or the loss in the optical waveguide.

[0084] Therefore, the light-emitting display device 100 according to the exemplary embodiment of the present disclosure can improve the light extraction efficiency of the light-emitting element 130 by using the outer coating layer 140 having the protruding portion 142. For example, in the light-emitting display device 100 according to the exemplary embodiment of the present disclosure, the outer coating layer 140 is configured to include a base portion 141 and a protruding portion 142 protruding from the base portion 141, and the reflective layer 131A of the first electrode 131 of the light-emitting element 130 is provided to cover the base portion 141 on which the protruding portion 142 is not provided and at least the side portion of the protruding portion 142. Therefore, the second light L2 emitted at a low emission angle from the light emitted from the light-emitting layer 132 of the light-emitting display device 100 can be extracted in the front direction by the reflective layer 131A provided on the side portion of the protruding portion 142. For example, as in the light-emitting display device of the related art, when the first electrode is disposed on the outer coating layer having a flat shape, the laterally guided light, for example, the light emitted at a low emission angle, does not travel in the front direction, and may not be extracted to the outside of the light-emitting display device due to the loss in the total reflection or the loss in the optical waveguide. However, in the light-emitting display device 100 according to the exemplary embodiment of the present disclosure, the second light L2 emitted from the light-emitting layer 132 at a low emission angle is reflected from the reflective layer 131A disposed on the side portion of the protruding portion 142 together with the first light L1 emitted from the light-emitting layer 132 in the front direction, and can be extracted in the front direction. Therefore, in the light-emitting display device 100 according to the exemplary embodiment of the present disclosure, the reflective layer 131A disposed on the side portion of the outer coating layer 140 can serve as a side mirror, whereby the light that may be lost in the light-emitting display device 100 can be extracted in the front direction, thereby improving the light extraction efficiency and improving the power consumption.

[0085] The first light L1 emitted from the light emitting layer 132 in the front direction has an electroluminescence (EL) spectrum and realizes a microcavity. On the other hand, the second light L2 emitted from the light emitting layer 132 at a low emission angle, reflected from the reflective layer 131A disposed on the side portion of the protruding portion 142, and then extracted in the front direction may have a photoluminescence (PL) characteristic. The PL spectrum is a spectrum of light emitted by receiving light energy, the EL spectrum is a spectrum of light emitted by receiving electrical energy, and a portion of the light energy may be dissipated in the form of energy such as heat. Therefore, in the PL spectrum, there may be light whose energy is relatively lower than that in the EL spectrum, such as light in the long wavelength region. Therefore, due to the additional light provided by the second light L2 having the PL characteristic, the light emitted outward from the light emitting display device 100 has a higher increase rate in the long wavelength range than in the short wavelength range.

[0086] For example, in the first sub-pixel SPX1 as a red sub-pixel, since the red light emitted from the red sub-pixel has a long wavelength, the first light L1 and the second light L2 are extracted from the first sub-pixel SPX1, and thus the color gamut can be further realized. Figure 3A As shown, in the first subpixel SPX1, the thickness of the transparent conductive layer 131B of the first electrode 131 can be the same in the emission area EA and the non-emission area NEA. For example, the thickness of the transparent conductive layer 131B on the base portion 141 can be the same as the thickness of the transparent conductive layer 131B on the protrusion portion 142.

[0087] Furthermore, in the second sub-pixel SPX2 as a green sub-pixel, since the increase rate of light extracted in the long wavelength range by the second light L2 is high, a change in color coordinates may be caused. However, generally, since the efficiency of a material used as a light-emitting layer for emitting green light is better than the efficiency of a light-emitting layer for emitting colored light other than green light, the intensity in the entire wavelength range is reduced to eliminate the increase in the amount of light in the long wavelength range, thereby preventing a change in color coordinates. Therefore, as Figure 3A As shown, in the second subpixel SPX2, the thickness of the transparent conductive layer 131B of the first electrode 131 can be the same in the emission area EA and the non-emission area NEA. For example, the thickness of the transparent conductive layer 131B on the base portion 141 can be the same as the thickness of the transparent conductive layer 131B on the protruding portion 142.

[0088] Next, in the third sub-pixel SPX3, which is a blue sub-pixel, since the increase rate of light extracted in the long wavelength range by the second light L2 is high, a color coordinate change may occur. In addition, generally, the efficiency of a material used as a light-emitting layer for emitting blue light is much lower than the efficiency of a light-emitting layer for emitting colored light other than blue light. Therefore, in the third sub-pixel SPX3, in the case of reducing the intensity in the entire wavelength range in the same manner as the second sub-pixel SPX2 to eliminate the increase in the amount of light in the long wavelength range, the light efficiency improved by implementing a microcavity may be reduced again.

[0089] Therefore, in the light-emitting display device 100 according to an exemplary embodiment of the present disclosure, the thickness of the transparent conductive layer 131B in the third sub-pixel SPX3, which is a blue sub-pixel among multiple sub-pixels SPX, is adjusted to prevent or minimize the color coordinate change that may occur in the third sub-pixel SPX3 through the second light L2.

[0090] Reference Figure 3BIn the third sub-pixel SPX3 as a blue sub-pixel, the transparent conductive layer 131B includes a first portion 131B1 as a first transparent conductive layer, a second portion 131B2 as a second transparent conductive layer, and a third portion 131B3 as a third transparent conductive layer.

[0091] The first portion 131B1 of the transparent conductive layer 131B is a portion of the transparent conductive layer 131B disposed on the base portion 141. The first portion 131B1 may be disposed to contact the base portion 141 of the overcoat layer 140. For example, the first portion 131B1 may be disposed in the emission area EA on the base portion 141 of the overcoat layer 140.

[0092] The thickness t1 of the first portion 131B1 may be set to an optimal thickness to realize a microcavity. For example, the thickness t1 of the first portion 131B1 in the third subpixel SPX3 may be 7 nm, but the embodiment is not limited thereto. In addition, as described above, when the first electrode 131 further includes another transparent conductive layer disposed between the reflective layer 131A and the overcoat layer 140, the thickness t1 of the first portion 131B1 and the thickness of the other transparent conductive layer disposed below the first portion 131B1 may be the same as each other.

[0093] The second portion 131B2 of the transparent conductive layer 131B is disposed on the protruding portion 142. For example, the second portion 131B2 may be disposed in the non-light emitting area NEA on the overcoat layer 140, and may be disposed in the non-light emitting area NEA on the protruding portion 142. The second portion 131B2 is disposed to be inclined relative to the first portion 131B1, and may extend from the first portion 131B1. The second portion 131B2 is disposed to contact the bank layer 114 disposed on the upper portion of the second portion 131B2, and may not contribute to the generation of light.

[0094] The thickness t2 of the second portion 131B2 may be greater than the thickness t1 of the first portion 131B1. For example, the vertical distance between the lower surface of the second portion 131B2 in contact with the reflective layer 131A and the upper surface of the second portion 131B2 in contact with the bank layer 114 may be greater than the thickness t1 of the first portion 131B1. For example, the thickness t2 of the second portion 131B2 may be 45 nm to 75 nm. In addition, as described above, when the first electrode 131 further includes another transparent conductive layer disposed between the reflective layer 131A and the overcoat layer 140, the thickness t2 of the second portion 131B2 may be greater than the thickness of the other transparent conductive layer disposed below the second portion 131B2.

[0095] The third portion 131B3 of the transparent conductive layer 131B is disposed on the protruding portion 142. For example, the third portion 131B3 may be disposed in the non-light emitting area NEA on the overcoat layer 140. Since the third portion 131B3 is disposed in contact with the upper surface of the protruding portion 142, the third portion 131B3 may be disposed parallel to the first portion 131B1. The third portion 131B3 is disposed to be inclined relative to the second portion 131B2 and may extend from the second portion 131B2. The third portion 131B3 is disposed in contact with the bank layer 114 disposed on the upper portion of the third portion 131B3 and may not contribute to the generation of light.

[0096] The thickness t3 of the third portion 131B3 may be the same as any one of the thickness t1 of the first portion 131B1 and the thickness t2 of the second portion 131B2. For example, when the third portion 131B3 and the first portion 131B1 are formed simultaneously for ease of manufacturing, the thickness t3 of the third portion 131B3 may be the same as the thickness t1 of the first portion 131B1. When the third portion 131B3 and the second portion 131B2 are formed simultaneously, the thickness t3 of the third portion 131B3 may be the same as the thickness t2 of the second portion 131B2. However, embodiments of the present disclosure are not limited thereto, and the thickness t3 of the third portion 131B3 may be different from the thickness t1 of the first portion 131B1 and the thickness t2 of the second portion 131B2.

[0097] In the light-emitting display device 100 according to the exemplary embodiment of the present disclosure, the thickness of the transparent conductive layer 131B of the first electrode 131 disposed in the third sub-pixel SPX3 as the blue sub-pixel can be adjusted so that the reflectivity of the light having a wavelength different from the wavelength of the blue light is reduced. In a stacked structure composed of layers with different refractive indices, at the interface where the refractive index differs, constructive interference and destructive interference may occur with respect to the light passing through the interface. That is, when the layers with different refractive indices are disposed in the path of travel of the light, the reflectivity within a specific wavelength range may be reduced by constructive interference and destructive interference caused by Fresnel reflection. Therefore, the second portion 131B2 of the transparent conductive layer 131B of the first electrode 131 disposed on the side portion of the protruding portion 142 and the bank layer 114 are configured to have different refractive indices, and the stacked structure of the second portion 131B2 and the bank layer 114 can reduce the extraction of light within a specific wavelength range. For example, the second light L2 emitted from the light emitting layer 132 at a low emission angle and traveling toward the side portion of the protruding portion 142 through the second portion 131B2 and the bank layer 114 is reflected from the reflective layer 131A disposed on the side portion of the protruding portion 142, and can be extracted in the front direction. In this case, reflection and interference phenomena occur at the interface between the second portion 131B2 and the bank layer 114 having different refractive indices and at the interface between the bank layer 114 and the layer disposed on the bank layer 114 with respect to the light traveling toward the side portion of the protruding portion 142. Furthermore, the reflectivity of light of a specific wavelength range extracted upward from the light emitting display device 100 can be reduced.

[0098] Therefore, in the light-emitting display device 100 according to the exemplary embodiment of the present disclosure, the transparent conductive layer 131B of the first electrode 131 is configured to include a first portion 131B1, a second portion 131B2, and a third portion 131B3. Also, the thickness t2 of the second portion 131B2 disposed on the side portion of the protruding portion 142 in the non-light-emitting area NEA is set to be different from the thickness t1 of the first portion 131B1. Therefore, the reflectivity of light at a specific wavelength can be adjusted. For example, in the light-emitting display device 100 according to the exemplary embodiment of the present disclosure, the reflectivity of light at a wavelength different from the wavelength of blue light can be reduced.

[0099] In addition, in the light-emitting display device 100 according to the exemplary embodiment of the present disclosure, the wavelength of light extracted from the light-emitting display device 100 can be adjusted without additional components. For example, by adjusting only the thickness of the transparent conductive layer 131B of the first electrode 131, the wavelength of light reflected and extracted from the side portion of the protruding portion 142 in the non-light-emitting area NEA can be adjusted. Therefore, in the light-emitting display device 100 according to the exemplary embodiment of the present disclosure, the process required to form an additional component for adjusting the wavelength of light can be minimized, and the manufacturing time and cost can also be minimized.

[0100] In addition, in the light-emitting display device 100 according to the exemplary embodiment of the present disclosure, the transparent conductive layer 131B is disposed in the non-light-emitting area NEA, and the change in color coordinates caused by the second light L2 emitted through the non-light-emitting area NEA can be prevented or suppressed while maintaining the high light efficiency achieved by the microcavity in the light-emitting area EA. In the light-emitting display device 100 according to the exemplary embodiment of the present disclosure, the first portion 131B1 of the transparent conductive layer 131B disposed in the light-emitting area EA has a thickness that realizes the microcavity, and the second portion 131B2 of the transparent conductive layer 131B disposed in the non-light-emitting area NEA has a thickness that can minimize the generation of light in the long wavelength region. Therefore, while maintaining the high light efficiency of the first light L1 emitted from the light-emitting area EA, the change in color coordinates of the second light L2 emitted from the light-emitting layer 132 at a low emission angle and reflected from the reflective layer 131A disposed on the side portion of the protruding portion 142 and then extracted in the front direction through the non-light-emitting area NEA can be minimized, and the color gamut can be improved. At the same time, referring to Fig. 7A The detailed thickness of the second portion 131B2 is described in detail.

[0101] Figure 4 is a cross-sectional view of a light emitting display device according to another exemplary embodiment of the present disclosure. Figure 4 The light-emitting display device 400 is similar to the first electrode 431 in Figures 1 to 3B The light-emitting display device 100 is different, but Figure 4 Other configurations of the light-emitting display device 400 are Figures 1 to 3B The configuration of the light emitting display device 100 is substantially the same. Therefore, redundant description will be omitted or will be simplified.

[0102] The first electrode 431 of the light emitting element 430 includes a reflective layer 131A and a transparent conductive layer 431B provided on the reflective layer 131A.

[0103] The reflective layer 131A of the first electrode 431 is disposed on the overcoat layer 140. The reflective layer 131A is disposed below the light emitting layer 132 and is disposed to cover the side portion of the protrusion 142, thereby changing the traveling direction of light traveling laterally in the light emitting layer 132 to a front direction.

[0104] The transparent conductive layer 431B is disposed on the reflective layer 131A, and includes a first portion 131B1, a second portion 431B2, and a third portion 131B3.

[0105] The first portion 131B1 of the transparent conductive layer 431B is a portion of the transparent conductive layer 431B disposed on the base portion 141. The first portion 131B1 may be disposed in the emission area EA on the base portion 141 of the overcoat layer 140. The thickness t1 of the first portion 131B1 may be adjusted to a thickness for realizing a microcavity.

[0106] The second portion 431B2 of the transparent conductive layer 431B is disposed on the protrusion 142. The second portion 431B2 may be disposed to be inclined with respect to the first portion 131B 1. The second portion 431B2 is disposed to contact the bank layer 114 disposed on an upper portion of the second portion 431B2 and may not contribute to light generation.

[0107] The second portion 431B2 is configured to include a plurality of layers. For example, the second portion 431B2 may include an upper layer 431B2T and a lower layer 431B2B. Figure 4 , the second portion 431B2 is shown as being composed of two layers, but the embodiment is not limited thereto. For example, the second portion 431B2 may further include an upper layer 431B2T, a lower layer 431B2B, and another layer between the upper layer 431B2T and the lower layer 431B2B.

[0108] The lower layer 431B2B of the second portion 431B2 is disposed on the protruding portion 142. The lower layer 431B2B may extend from the first portion 131B1. For example, the lower layer 431B2B may be formed of the same material as the first portion 131B1 and may be implemented integrally with the first portion 131B1. In addition, the thickness t21 of the lower layer 431B2B may be the same as the thickness t1 of the first portion 131B1.

[0109] The upper layer 431B2T of the second portion 431B2 is disposed on the lower layer 431B2B of the second portion 431B2. The upper layer 431B2T may be disposed in contact with the lower layer 431B2B. The upper layer 431B2T may be formed of the same material as the lower layer 431B2B, and may be formed of a material having the same refractive index, for example.

[0110] The third portion 131B3 of the transparent conductive layer 431B is disposed on the protruding portion 142 .

[0111] The thickness t3 of the third portion 131B3 may be the same as the thickness t1 of the first portion 131B1 and the thickness t21 of the lower layer 431B2B. For example, when the first portion 131B1, the lower layer 431B2B and the third portion 131B3 are formed simultaneously, the thickness t3 of the third portion 131B3 may be the same as the thickness t1 of the first portion 131B1 and the thickness t21 of the lower layer 431B2B. Therefore, the transparent conductive layer 431B may include: a first layer including the first portion 131B1, the lower layer 431B2B and the third portion 131B3; and a second layer, which is an upper layer 431B2T disposed on a portion of the first layer. However, embodiments of the present disclosure are not limited thereto, and the thickness t3 of the third portion 131B3 may be the same as the thickness t2 of the second portion 431B2, or different from both the thickness t1 of the first portion 131B1 and the thickness t2 of the second portion 431B2.

[0112] In the light-emitting display device 400 according to another exemplary embodiment of the present disclosure, the transparent conductive layer 431B of the first electrode 431 is configured to include a first portion 131B1, a second portion 431B2, and a third portion 131B3. Also, the thickness t2 of the second portion 431B2 disposed on the side portion of the protruding portion 142 in the non-light-emitting area NEA is adjusted to be different from the thickness t1 of the first portion 131B1. Therefore, the reflectivity of light of a specific wavelength can be adjusted.

[0113] In addition, in the light-emitting display device 400 according to another exemplary embodiment of the present disclosure, only the thickness t1 of the transparent conductive layer 431B of the first electrode 431 is adjusted, thereby controlling the wavelength of light reflected and extracted from the side portion of the protruding portion 142 in the non-light-emitting area NEA. Therefore, in the light-emitting display device 400 according to another exemplary embodiment of the present disclosure, the process required to additionally form a member for adjusting the wavelength of light can be minimized, and manufacturing time and cost can also be minimized.

[0114] In addition, in the light-emitting display device 400 according to another exemplary embodiment of the present disclosure, the first portion 131B1 of the transparent conductive layer 431B disposed in the light-emitting area EA has a thickness for realizing a microcavity, and the second portion 431B2 of the transparent conductive layer 431B disposed in the non-light-emitting area NEA has a thickness capable of minimizing the generation of light in the long wavelength region. Therefore, while maintaining the high light efficiency of the first light L1 emitted from the light-emitting area EA, the change in the color coordinates of the second light L2 emitted from the light-emitting layer 132 at a low emission angle and reflected from the reflective layer 131A disposed on the side portion of the protruding portion 142 and then extracted in the front direction through the non-light-emitting area NEA can be minimized, and the color gamut or color reproduction rate can be improved.

[0115] In addition, in the light-emitting display device 400 according to another exemplary embodiment of the present disclosure, the second portion 431B2 of the transparent conductive layer 431B is configured to include a plurality of layers, thereby simplifying the manufacturing process of the transparent conductive layer 431B. For example, in the light-emitting display device 400, the transparent conductive layer 431B may include: a first layer including a first portion 131B1, a lower layer 431B2B, and a third portion 131B3; and a second layer, which is an upper layer 431B2T disposed on a portion of the first layer. Therefore, compared with the case where the first portion 131B1, the second portion 431B2, and the third portion 131B3 are formed in different processes, respectively, the number of processes for manufacturing the transparent conductive layer 431B, such as a mask process, a lamination process, etc., can be reduced. Therefore, in the light-emitting display device 400 according to another exemplary embodiment of the present disclosure, the manufacturing process of the transparent conductive layer 431B can be simplified by configuring the second portion 431B2 of the transparent conductive layer 431B into a plurality of layers. Furthermore, the manufacturing cost of the light-emitting display device 400 and the time required to manufacture the light-emitting display device 400 may be reduced.

[0116] Figure 5 is a cross-sectional view of a light emitting display device according to another exemplary embodiment of the present disclosure. Figure 5 The light-emitting display device 500 is similar to Figures 1 to 3B The light-emitting display device 100 is different from the light-emitting display device 100, but other configurations of the light-emitting display device 500 are the same as those of the light-emitting display device 100. Figures 1 to 3B The configuration of the light emitting display device 100 is substantially the same. Therefore, redundant description will be omitted or simplified.

[0117] Reference Figure 5, the bank layer 514 is disposed on the first electrode 131. The bank layer 514 may be formed of an inorganic material. For example, the bank layer 514 may be formed of an inorganic material such as silicon nitride (SiNx) or silicon oxide (SiOx), but is not limited thereto. For example, when the bank layer 514 is formed of silicon nitride (SiNx), the refractive index of the bank layer 514 may be about 1.85.

[0118] Since the bank layer 514 is formed of an inorganic material, the thickness of the bank layer 514 can be reduced compared to the case where the bank layer is formed of an organic material.

[0119] In the light-emitting display device 500 according to another exemplary embodiment of the present disclosure, the transparent conductive layer 131B of the first electrode 131 is configured to include a first portion 131B1, a second portion 131B2, and a third portion 131B3. Also, the thickness t2 of the second portion 131B2 disposed on the side portion of the protruding portion 142 in the non-light-emitting area NEA is adjusted to be different from the thickness t1 of the first portion 131B1. Therefore, the reflectivity of light at a specific wavelength can be adjusted.

[0120] In addition, in the light-emitting display device 500 according to another exemplary embodiment of the present disclosure, only the thickness of the transparent conductive layer 131B of the first electrode 131 is adjusted, thereby controlling the wavelength of light reflected and extracted from the side portion of the protruding portion 142 in the non-light-emitting area NEA. Therefore, in the light-emitting display device 500 according to another exemplary embodiment of the present disclosure, the process required to additionally form a member for adjusting the wavelength of light can be minimized, and manufacturing time and cost can also be minimized.

[0121] In addition, in the light-emitting display device 500 according to another exemplary embodiment of the present disclosure, the first portion 131B1 of the transparent conductive layer 131B disposed in the light-emitting area EA has a thickness for realizing a microcavity, and the second portion 131B2 of the transparent conductive layer 131B disposed in the non-light-emitting area NEA has a thickness capable of minimizing the generation of light in the long wavelength region. Therefore, while maintaining high light efficiency of the first light L1 emitted from the light-emitting area EA, changes in color coordinates of the second light L2 emitted from the light-emitting layer 132 at a low emission angle and reflected from the reflective layer 131A disposed on the side portion of the protruding portion 142 and then extracted in the front direction through the non-light-emitting area NEA can be minimized, and the color gamut can be improved.

[0122] In the light-emitting display device 500 according to another exemplary embodiment of the present disclosure, a bank layer 514 having a refractive index different from that of the first electrode 131 is disposed on the first electrode 131, thereby controlling light extraction in each sub-pixel SPX. For example, when the reflectivity of the material used to configure the bank layer 514 disposed on the transparent conductive layer 131B is higher than the refractive index of the transparent conductive layer 131B, light traveling laterally from the light generated from the light-emitting layer 132 passes through the bank layer 514 and the second portion 131B2, and constructive interference and destructive interference may occur according to the difference in thickness between the bank layer 514 and the second portion 131B2. Therefore, in the light-emitting display device 500 according to another exemplary embodiment of the present disclosure, by adjusting the thickness of the bank layer 514 and the second portion 131B2, a wavelength range in which constructive interference and destructive interference occur by reflection at the interface between the reflective layer 131A of the first electrode 131 and the second portion 131B2 and at the interface between the second portion 131B2 and the bank layer 514 can be set. For example, the transmittance of light at a wavelength different from the transmittance of blue light can be reduced, and light extraction in a long wavelength region can be limited. Figure 7B and Figure 7C The thickness of the second portion 131B2 and the bank layer 514 are described in detail.

[0123] Figure 6 is a cross-sectional view of a light emitting display device according to another exemplary embodiment of the present disclosure. Figure 6 The light-emitting display device 600 is similar to the light-emitting display device 600 in terms of the overcoat layer 640, the first electrode 631 and the bank layer 614. Figures 1 to 3B The light-emitting display device 100 is different from the light-emitting display device 100 of FIG. 1 , but other configurations of the light-emitting display device 600 are the same as those of FIG. Figures 1 to 3B The configuration of the light emitting display device 100 is substantially the same. Therefore, redundant description will be omitted or simplified.

[0124] The protruding portion 642 of the overcoat layer 640 includes at least one curved portion or uneven portion 624a. The curved portion 624a may be disposed on a portion of the upper surface of the protruding portion 642. Since the curved portion 624a may improve the extraction efficiency and front efficiency of light emitted from the light emitting layer 132, the curved portion 624a may be a light extraction pattern. Figure 6 , the bent portion 624a is provided to have a groove shape, and may have an elliptical cross-section. However, the embodiment is not limited thereto.

[0125] Figure 6It is shown that one curved portion 624a is disposed on the left side of the display area A / A, and another curved portion 624a is disposed on the right side of the display area A / A. However, the number of rows of the curved portions 624a and the number of points of the curved portions 624a are not limited thereto and may be variously changed.

[0126] The curved portion 624a may easily change the traveling direction of light guided to the outside of the side mirror structure. In addition, the curved portion 624a may easily change the traveling direction of light incident into the curved portion 624a.

[0127] The first electrode 631 of the light emitting element 630 is disposed on the overcoat layer 640 , and may be disposed along the shapes of the base portion 141 and the protrusion portion 642 .

[0128] The first electrode 631 includes a reflective layer 631A and a transparent conductive layer 631B disposed on the reflective layer 631A.

[0129] The reflective layer 631A is provided on the outer coating layer 640. The reflective layer 631A may be provided along the shape of the curved portion 624a provided on the protruding portion 642, and have a curved upper surface on the upper surface of the protruding portion 642. Therefore, the reflective layer 631A has a flat upper surface on the upper surface of the base portion 141, and has a curved upper surface on the upper surface of the protruding portion 642. The reflective layer 631A may have a flat surface on the upper surface of the protruding portion 642 on which the curved portion 624a is not provided, and the reflective layer 631A has an inclined upper surface on a side portion of the protruding portion 642.

[0130] The transparent conductive layer 631B is provided on the reflective layer 631A along the shape of the reflective layer 631A.

[0131] Reference Figure 6 , the transparent conductive layer 631B includes a first portion 131B1, a second portion 131B2 and a third portion 631B3.

[0132] The first portion 131B1 of the transparent conductive layer 631B is a portion of the transparent conductive layer 631B disposed on the base portion 141. The first portion 131B1 may be disposed in the emission area EA on the base portion 141 of the overcoat layer 640. The thickness t1 of the first portion 131B1 may be set to an optimal thickness for realizing a microcavity.

[0133] The second portion 131B2 of the transparent conductive layer 631B is disposed on the protruding portion 642. The second portion 131B2 is disposed to be inclined relative to the first portion 131B1 and may extend from the first portion 131B1. The second portion 131B2 is disposed to contact the bank layer 614 disposed on the upper portion of the second portion 131B2 and may not contribute to the generation of light. The thickness t2 of the second portion 131B2 may be greater than the thickness t1 of the first portion 131B1.

[0134] The third portion 631B3 of the transparent conductive layer 631B is disposed on the protrusion portion 642. For example, the third portion 631B3 may be disposed in the non-emission area NEA on the overcoat layer 640, and may be disposed in the non-emission area NEA on the protrusion portion 642.

[0135] The third portion 631B3 is disposed on the protruding portion 642 and is disposed along the shape of the curved portion 624a. Therefore, the third portion 631B3 may have a flat surface on the protruding portion 642 and a curved surface on the curved portion 624a.

[0136] The thickness t3 of the third portion 631B3 may be the same as the thickness t2 of the second portion 131B2. However, the embodiment is not limited thereto, and the thickness t3 of the third portion 631B3 disposed on the bent portion 624a may be the same as the thickness t2 of the second portion 131B2, and the thickness t3 of the third portion 631B3 disposed on the protruding portion 642 on which the bent portion 624a is not disposed may be the same as the thickness t1 of the first portion 131B1.

[0137] The bank layer 614 is disposed on a portion of the first electrode 631 and the overcoat layer 640. The bank layer 614 may be formed of an organic material. Since the bank layer 614 is formed of an organic material, the bank layer 614 may be disposed to fill the curved upper surface of the first electrode 631. Therefore, the bank layer 614 is disposed on the protruding portion 642 and may flatten the upper portion of the protruding portion 642. The bank layer 614 may have a shape flatter than the upper surface of the protruding portion 642.

[0138] In the light-emitting display device 600 according to another exemplary embodiment of the present disclosure, the transparent conductive layer 631B of the first electrode 631 is configured to include a first portion 131B1, a second portion 131B2, and a third portion 631B3. Also, the thickness t2 of the second portion 131B2 disposed on the side portion of the protruding portion 642 in the non-light-emitting area NEA is adjusted to be different from the thickness t1 of the first portion 131B1. Therefore, the reflectivity of light at a specific wavelength can be adjusted.

[0139] In addition, in the light-emitting display device 600 according to another exemplary embodiment of the present disclosure, only the thickness of the transparent conductive layer 631B of the first electrode 631 can be adjusted, thereby controlling the wavelength of light reflected and extracted from the side portion of the protruding portion 642 in the non-light-emitting area NEA. Therefore, in the light-emitting display device 600 according to another exemplary embodiment of the present disclosure, the process required to additionally form a member for adjusting the wavelength of light can be minimized, and the manufacturing time and cost can also be minimized.

[0140] In addition, in the light-emitting display device 600 according to another exemplary embodiment of the present disclosure, the first portion 131B1 of the transparent conductive layer 631B disposed in the light-emitting area EA has a thickness for realizing a microcavity, and the second portion 131B2 of the transparent conductive layer 631B disposed in the non-light-emitting area NEA has a thickness capable of minimizing the generation of light in the long wavelength region. Therefore, while maintaining high light efficiency of the first light L1 emitted from the light-emitting area EA, changes in color coordinates of the second light L2 emitted from the light-emitting layer 132 at a low emission angle and reflected from the reflective layer 631A disposed on the side portion of the protruding portion 642 and then extracted in the front direction through the non-light-emitting area NEA can be minimized, and the color gamut can be improved.

[0141] Furthermore, in the light-emitting display device 600 according to another exemplary embodiment of the present disclosure, the bent portion 624a is provided on the upper surface of the protruding portion 642 of the overcoat layer 640, so that the path of the light captured between the bank layer 614 and the second encapsulation layer 152 by total reflection can be adjusted, thereby increasing the light extraction efficiency of the light-emitting display device 600. For example, some light emitted from the light-emitting layer 132 can be totally reflected and captured inside the light-emitting display device 600. At this time, the traveling direction of the third light L3 traveling in the direction of the bent portion 624a of the protruding portion 642 among the light totally reflected inside the light-emitting display device 600 can be changed, so that the third light L3 is extracted to the outside of the light-emitting display device 600 by the reflective layer 631A of the first electrode 631. For example, a material for configuring the bank layer 614 may have a refractive index of about 1.6, an organic material for configuring the light emitting layer 132 may have a refractive index of about 1.8, an inorganic material for configuring the first encapsulation layer 151 may have a refractive index of about 1.8, and an organic material for configuring the second encapsulation layer 152 may have a refractive index of about 1.5 to about 1.6. Therefore, due to the difference in refractive index between the first encapsulation layer 151 and the second encapsulation layer 152, light emitted from the light emitting layer 132 is totally reflected at an interface between the first encapsulation layer 151 and the second encapsulation layer 152 and at an interface between the light emitting layer 132 and the bank layer 614. Therefore, the third light L3 of the totally reflected light may be reflected at least once within the curved surface of the reflective layer 631A of the first electrode 631 and extracted in the front direction.

[0142] Therefore, in the light-emitting display device 600 according to another exemplary embodiment of the present disclosure, the reflective layer 631A of the first electrode 631 is arranged along the curved portion 624a of the protruding portion 642, thereby changing the traveling direction of light that may be captured between the embankment layer 614 and the second encapsulation layer 152, so that the light extraction efficiency of the light-emitting display device 600 and the front efficiency of the light-emitting display device 600, that is, the extraction efficiency of light extracted in the front direction, can be increased.

[0143] In addition, in the light-emitting display device 600 according to another exemplary embodiment of the present disclosure, the curved portion 624a is disposed on the upper surface of the protruding portion 642 of the outer coating layer 640. And, the thickness t2 of the second portion 131B2 of the transparent conductive layer 631B disposed on the side surface of the protruding portion 642 and the thickness t3 of the third portion 631B3 of the transparent conductive layer 631B disposed on the curved portion 624a are adjusted, thereby adjusting the reflectivity of light at a specific wavelength. For example, the third light L3 may pass through the second portion 131B2, the third portion 631B3, the bank layer 614, the first encapsulation layer 151, and the second encapsulation layer 152 disposed in the non-light-emitting area NEA. And, the third light L3 passes through the interface with different refractive indices, and thus reflection and interference phenomena may occur. Therefore, in the light-emitting display device 600 according to another exemplary embodiment of the present disclosure, the transparent conductive layer 631B of the first electrode 631 is configured to include the first portion 131B1, the second portion 131B2, and the third portion 631B3. Also, the thicknesses of the second and third portions 131B2 and 631B3 are different from the thickness t1 of the first portion 131B1. Therefore, a change in color coordinates of the third light L3 reflected from the curved surface of the reflective layer 631A of the first electrode 631 and extracted in the front direction may be minimized and a color gamut may be improved.

[0144] FIG. 7A to FIG. 7C is a graph illustrating light extraction spectra of a light emitting display device according to various exemplary embodiments of the present disclosure. Fig. 7A A light extraction simulation result according to the thickness t2 of the second portion 131B2 of the light emitting display device 100 according to an exemplary embodiment of the present disclosure is shown. Figure 7B A light extraction simulation result according to the thickness t2 of the second portion 131B2 of the light emitting display device 500 according to another exemplary embodiment of the present disclosure is shown. Figure 7C A light extraction simulation result according to the thickness of the bank layer 514 of the light emitting display device 500 according to another exemplary embodiment of the present disclosure is shown.

[0145] exist FIG. 7A to FIG. 7C In the figure, for simulation, the light-emitting display device 100 or 500 according to various exemplary embodiments of the present disclosure is configured to include an outer coating 140, a first electrode 131, a light-emitting layer 132, and a dam layer 114 or 514, and it is assumed that the side portion of the protruding portion 142 of the outer coating 140 and the base portion 141 form an inclination angle of 60 degrees. FIG. 7A to FIG. 7C 14 shows the light extraction spectrum of light extracted from the side portion of the protruding portion 142. For example, FIG. 7A to FIG. 7CThe illustrated spectrum may be a spectrum of light extracted by passing through the bank layer 114 and the second portion 131B2 disposed on the side portion of the protrusion portion 142 . FIG. 7A to FIG. 7C The curve graph of is an experimental result obtained by setting the maximum peak value to 1.

[0146] first, Fig. 7A The light extraction simulation result according to the thickness t2 of the second portion 131B2 of the light emitting display device 100 according to the exemplary embodiment of the present disclosure is shown. In the exemplary embodiments 1 to 8 of the present disclosure, it is assumed that as an element corresponding to the bank layer 114, polyimide with a refractive index of 1.6 is set to have a thickness of 2200nm, and it is assumed that indium tin oxide (ITO) with a refractive index of 1.8 is set as an element corresponding to the second portion 131B2.

[0147] In Exemplary Embodiment 1, it is assumed that the thickness t2 of the second portion 131B2 is 5 nm. In Exemplary Embodiment 2, it is assumed that the thickness t2 of the second portion 131B2 is 15 nm. In Exemplary Embodiment 3, it is assumed that the thickness t2 of the second portion 131B2 is 25 nm. In Exemplary Embodiment 4, it is assumed that the thickness t2 of the second portion 131B2 is 35 nm. In Exemplary Embodiment 5, it is assumed that the thickness t2 of the second portion 131B2 is 45 nm. In Exemplary Embodiment 6, it is assumed that the thickness t2 of the second portion 131B2 is 55 nm. In Exemplary Embodiment 7, it is assumed that the thickness t2 of the second portion 131B2 is 65 nm. In Exemplary Embodiment 8, it is assumed that the thickness t2 of the second portion 131B2 is 75 nm. In Exemplary Embodiment 9, it is assumed that the thickness t2 of the second portion 131B2 is 85 nm.

[0148] Reference Fig. 7A, it can be confirmed that as the thickness t2 of the second portion 131B2 increases from 5nm to 85nm, the first peak where light extraction is minimized moves to the long wavelength region. When the thickness t2 of the second portion 131B2 is less than 45nm, the first peak moves to an extremely short wavelength, and therefore, the blue light extraction efficiency itself may be significantly reduced, which is a problem. When the thickness t2 of the second portion 131B2 is greater than 75nm, the second peak formed in a wavelength range shorter than the wavelength range of the first peak moves to the long wavelength region, thereby reducing the transmission of light in the wavelength range of 440nm to 480nm. Therefore, the blue light extraction efficiency may be reduced. Therefore, in the light-emitting display device 100 according to an exemplary embodiment of the present disclosure, when the inclination angle formed by the side portion of the protruding portion 142 and the base portion 141 is 60 degrees, the embankment layer 114 has a thickness of 2200nm, polyimide with a refractive index of 1.6 is set as the embankment layer 114, and indium tin oxide (ITO) with a refractive index of 1.8 is set as the second portion 131B2, and the thickness t2 of the second portion 131B2 can be set to 45nm to 75nm, thereby improving the color gamut characteristics while improving the extraction efficiency of blue light.

[0149] Figure 7B A light extraction simulation result according to the thickness t2 of the second portion 131B2 of the light emitting display device 500 according to another embodiment of the present invention is shown. Figure 7B The exemplary embodiment of the present invention is similar to Fig. 7A The implementation methods are different, and Figure 7B Other configurations of the exemplary embodiments and Fig. 7A Therefore, redundant descriptions will be omitted or simplified.

[0150] Figure 7B The light extraction simulation results according to exemplary embodiments 1 to 5 of the present disclosure are shown. In exemplary embodiments 1 to 5, it is assumed that silicon nitride (SiNx) having a refractive index of 1.85 is provided to have a thickness of 1000 nm as an element corresponding to the bank layer 514, and it is assumed that indium tin oxide (ITO) having a refractive index of 1.8 is provided as an element corresponding to silicon nitride (SiNx).

[0151] In Exemplary Embodiment 1, it is assumed that the thickness t2 of the second portion 131B2 is 5 nm. In Exemplary Embodiment 2, it is assumed that the thickness t2 of the second portion 131B2 is 15 nm. In Exemplary Embodiment 3, it is assumed that the thickness t2 of the second portion 131B2 is 25 nm. In Exemplary Embodiment 4, it is assumed that the thickness t2 of the second portion 131B2 is 35 nm. In Exemplary Embodiment 5, it is assumed that the thickness t2 of the second portion 131B2 is 45 nm. Figure 7B, it can be confirmed that as the thickness t2 of the second portion 131B2 increases from 5nm to 45nm, the wavelength at which light extraction is minimized moves to the long wavelength region. When the thickness t2 of the second portion 131B2 is less than 5nm, the wavelength at which light extraction is minimized is converted to an extremely short wavelength, and therefore, the blue light extraction efficiency itself may be significantly reduced, which is a problem. Therefore, in the light-emitting display device 500 according to another exemplary embodiment of the present disclosure, when the inclination angle formed by the side portion of the protruding portion 142 and the base portion 141 is 60 degrees, the bank layer 514 has a thickness of 1000nm, silicon nitride (SiNx) with a refractive index of 1.85 is provided as the bank layer 514, and indium tin oxide (ITO) with a refractive index of 1.8 is provided as the second portion 131B2, and the thickness t2 of the second portion 131B2 can be set to 5nm to 25nm, thereby improving the color gamut characteristics while improving the extraction efficiency of blue light.

[0152] Figure 7C A light extraction simulation result according to the thickness of the bank layer 514 of the light emitting display device 500 according to another exemplary embodiment of the present disclosure is shown. Figure 7C The exemplary embodiment of the present invention is different from the bank layer 514 and the second portion 131B2 in that Figure 7B The implementation methods are different, but Figure 7C Other configurations of the exemplary embodiments and Figure 7B Therefore, redundant descriptions will be omitted or simplified.

[0153] Figure 7C The light extraction simulation results of the transmittance according to the wavelength of light in exemplary embodiments 1 to 3 are shown. In exemplary embodiments 1 to 3, it is assumed that as an element corresponding to the second portion 131B2, indium tin oxide (ITO) having a refractive index of 1.8 is provided to have a thickness of 15 nm, and it is assumed that silicon nitride (SiNx) having a refractive index of 1.85 is provided as an element corresponding to the bank layer 514.

[0154] In Exemplary Embodiment 1, it is assumed that the thickness of the bank layer 514 is 1000 nm. In Exemplary Embodiment 2, it is assumed that the thickness of the bank layer 514 is 1500 nm. In Exemplary Embodiment 3, it is assumed that the thickness of the bank layer 514 is 2000 nm. Figure 7CIt can be confirmed that as the thickness of the bank layer 514 increases from 1000nm to 2000nm, the wavelength at which light extraction is minimized moves to the long wavelength region. When the thickness of the bank layer 514 is 1000nm, the wavelength at which light extraction is minimized shifts to an extremely short wavelength, and therefore, the blue light extraction efficiency itself may be significantly reduced, which is a problem. When the thickness of the bank layer 514 is 2000nm, the wavelength at which light extraction is minimized shifts to an extremely long wavelength, so that the reflectivity of light in the wavelength range of 480nm to 500nm may not decrease. Therefore, in a light-emitting display device 500 according to another exemplary embodiment of the present disclosure, when the inclination angle formed by the side portion of the protruding portion 142 and the base portion 141 is 60 degrees, indium tin oxide (ITO) having a thickness of 15 nm and a refractive index of 1.8 is provided as the second portion 131B2, and silicon nitride (SiNx) having a refractive index of 1.85 is provided as the embankment layer 514, and the thickness of the embankment layer 514 can be provided to be 1000 nm to 2000 nm, thereby improving the color gamut characteristics while improving the extraction efficiency of blue light.

[0155] A light emitting display device according to one or more embodiments of the present disclosure will be described below.

[0156] According to an embodiment of the present disclosure, a light-emitting display device includes: a substrate including a plurality of sub-pixels; an outer coating layer on the substrate and having a base portion and a protruding portion protruding from the base portion; a first electrode, the first electrode being arranged to cover a side portion and a base portion of the protruding portion at a plurality of sub-pixels; a dam layer covering the first electrode and a portion of the outer coating layer; and a light-emitting layer and a second electrode, the light-emitting layer and the second electrode being on the first electrode and the dam layer at the plurality of sub-pixels, wherein the first electrode includes a reflective layer and a transparent conductive layer on the reflective layer, wherein the transparent conductive layer includes a first portion on the base portion and a second portion on a side surface of the protruding portion, and wherein a thickness of the second portion is greater than a thickness of the first portion.

[0157] According to some embodiments of the present disclosure, the thickness of the second portion may be a vertical distance between a lower surface of the second portion contacting the reflective layer and an upper surface of the second portion contacting the bank layer.

[0158] According to some embodiments of the present disclosure, the plurality of sub-pixels may include a red sub-pixel, a green sub-pixel, and a blue sub-pixel, and the transparent conductive layer may be disposed at the blue sub-pixel.

[0159] According to some embodiments of the present disclosure, the bank layer may be formed of an inorganic material.

[0160] According to some embodiments of the present disclosure, the transparent conductive layer may further include a third portion on an upper surface of the protruding portion, and a thickness of the third portion may be the same as a thickness of the first portion or a thickness of the second portion.

[0161] According to some embodiments of the present disclosure, the protruding portion may include one or more uneven portions on an upper surface of the protruding portion.

[0162] According to some embodiments of the present disclosure, a thickness of the third portion on the uneven portion may be the same as a thickness of the second portion.

[0163] According to some embodiments of the present disclosure, the light emitting layer may be individually disposed in each of the plurality of sub-pixels, and a thickness of the light emitting layer may have a value configured to have a microcavity at each of the plurality of sub-pixels.

[0164] According to an embodiment of the present disclosure, a light-emitting display device includes: a substrate having a plurality of sub-pixels, wherein the plurality of sub-pixels include a light-emitting area and a non-light-emitting area; an outer coating layer having a protruding portion protruding from the non-light-emitting area; a light-emitting element, wherein the light-emitting element includes a first electrode in contact with the protruding portion, a second electrode, and a light-emitting layer at the light-emitting area between the first electrode and the second electrode; and a dam layer, wherein the dam layer covers the first electrode and a portion of the protruding portion, wherein the first electrode includes a reflective layer and a transparent conductive layer on the reflective layer, the transparent conductive layer includes a first transparent conductive layer at the light-emitting area and a second transparent conductive layer arranged on the protruding portion in the non-light-emitting area, and the thickness of the second transparent conductive layer is greater than the thickness of the first transparent conductive layer.

[0165] According to some embodiments of the present disclosure, a thickness of the second transparent conductive layer and a thickness of the first transparent conductive layer are configured to reduce occurrence of a color coordinate change due to light reflected and extracted by a reflective layer disposed on the protruding portion.

[0166] According to some embodiments of the present disclosure, the plurality of sub-pixels may include a red sub-pixel, a green sub-pixel, and a blue sub-pixel, and the first transparent conductive layer and the second transparent conductive layer may be disposed at the blue sub-pixel.

[0167] According to some embodiments of the present disclosure, the first transparent conductive layer and the second transparent conductive layer may include the same material.

[0168] According to some embodiments of the present disclosure, the first transparent conductive layer and the second transparent conductive layer may be integrally provided.

[0169] According to some embodiments of the present disclosure, the second transparent conductive layer may include a material having a refractive index different from that of the bank layer.

[0170] According to some embodiments of the present disclosure, the second transparent conductive layer may include a lower layer and an upper layer on the lower layer.

[0171] According to some embodiments of the present disclosure, the upper layer may include a material having a refractive index different from that of the lower layer.

[0172] According to some embodiments of the present disclosure, the bank layer may include an organic material, the thickness of the bank layer may be 2200 nm, and the thickness of the second transparent conductive layer may be 45 nm to 75 nm.

[0173] According to some embodiments of the present disclosure, the bank layer may include an inorganic material, and the thickness of the second transparent conductive layer may be 5 nm to 25 nm.

[0174] According to some embodiments of the present disclosure, the bank layer may have a thickness of 1000 nm to 2000 nm.

[0175] According to an embodiment of the present disclosure, a light-emitting display device includes: an outer coating layer, which is on a substrate and has a base portion and a protruding portion protruding from the base portion; a first electrode, which is arranged to cover the base portion and a side portion of the protruding portion, and the first electrode includes a reflective layer and a transparent conductive layer on the reflective layer; a dam layer, which covers the outer coating layer and a portion of the first electrode; and a light-emitting layer and a second electrode on the first electrode and the dam layer.

[0176] According to some embodiments of the present disclosure, a thickness of the transparent conductive layer on the base portion of the overcoat layer is equal to a thickness of the transparent conductive layer on the protruding portion of the overcoat layer.

[0177] It will be apparent to those skilled in the art that various modifications and changes may be made to the present disclosure without departing from the technical concept or scope of the present disclosure. Therefore, if the modifications and changes of the present disclosure fall within the scope of the appended claims and their equivalents, it may be intended that the embodiments of the present disclosure cover the modifications and changes of the present disclosure.

[0178] According to the above description, the embodiments of the present invention also disclose the following technical solutions, including but not limited to:

[0179] Solution 1. A light-emitting display device, comprising:

[0180] a substrate, the substrate comprising a plurality of sub-pixels;

[0181] an outer coating layer on the substrate and having a base portion and a protruding portion protruding from the base portion;

[0182] a first electrode disposed to cover the base portion and side portions of the protruding portion at the plurality of sub-pixels;

[0183] a bank layer covering the outer coating layer and a portion of the first electrode; and

[0184] a light emitting layer and a second electrode on the first electrode and the bank layer at the plurality of sub-pixels,

[0185] The first electrode includes a reflective layer and a transparent conductive layer on the reflective layer.

[0186] wherein the transparent conductive layer includes a first portion on the base portion and a second portion on the side surface of the protruding portion, and

[0187] Wherein, the thickness of the second portion is greater than the thickness of the first portion.

[0188] Solution 2. The light-emitting display device according to Solution 1, wherein the thickness of the second portion is a vertical distance between a lower surface of the second portion in contact with the reflective layer and an upper surface of the second portion in contact with the bank layer.

[0189] Solution 3. A light-emitting display device according to Solution 1, wherein the plurality of sub-pixels include a red sub-pixel, a green sub-pixel, and a blue sub-pixel, and

[0190] Wherein, the transparent conductive layer is arranged at the blue sub-pixel.

[0191] Solution 4. The light-emitting display device according to Solution 1, wherein the bank layer is formed of an inorganic material.

[0192] Solution 5. The light-emitting display device according to Solution 1, wherein:

[0193] The transparent conductive layer further includes a third portion, the third portion being on an upper surface of the protruding portion, and

[0194] The thickness of the third portion is the same as the thickness of the first portion or the thickness of the second portion.

[0195] Solution 6. The light-emitting display device according to Solution 5, wherein the protruding portion includes one or more uneven portions on an upper surface of the protruding portion.

[0196] Solution 7. The light-emitting display device according to Solution 6, wherein a thickness of the third portion on the uneven portion is the same as a thickness of the second portion.

[0197] Solution 8. The light-emitting display device according to Solution 1, wherein the light-emitting layer is provided at each of the plurality of sub-pixels, respectively, and

[0198] The thickness of the light emitting layer has a value configured to have a microcavity at each of the plurality of sub-pixels.

[0199] Solution 9. A light-emitting display device, comprising:

[0200] A substrate having a plurality of sub-pixels, wherein the plurality of sub-pixels include a light-emitting region and a non-light-emitting region;

[0201] an outer coating layer having a protruding portion protruding from the non-light emitting region;

[0202] a light emitting element including a first electrode in contact with the protruding portion, a second electrode, and a light emitting layer at a light emitting region between the first electrode and the second electrode; and

[0203] a bank layer covering the first electrode and a portion of the protruding portion,

[0204] The first electrode includes a reflective layer and a transparent conductive layer on the reflective layer.

[0205] The transparent conductive layer includes a first transparent conductive layer at the light emitting area and a second transparent conductive layer on the protruding portion at the non-light emitting area, and

[0206] Wherein, the thickness of the second transparent conductive layer is greater than the thickness of the first transparent conductive layer.

[0207] Option 10. A light-emitting display device according to Option 9, wherein the thickness of the second transparent conductive layer and the thickness of the first transparent conductive layer are configured to reduce the occurrence of color coordinate changes caused by light reflected and extracted by the reflective layer arranged on the protruding portion.

[0208] Solution 11. The light-emitting display device according to Solution 9, wherein the plurality of sub-pixels include red sub-pixels, green sub-pixels, and blue sub-pixels, and

[0209] The first transparent conductive layer and the second transparent conductive layer are disposed at the blue sub-pixel.

[0210] Option 12. The light-emitting display device according to Option 9, wherein the first transparent conductive layer and the second transparent conductive layer include the same material.

[0211] Solution 13. The light-emitting display device according to Solution 9, wherein the first transparent conductive layer and the second transparent conductive layer are integrally provided.

[0212] Solution 14. The light-emitting display device according to Solution 10, wherein the second transparent conductive layer includes a material having a refractive index different from that of the bank layer.

[0213] Option 15. The light-emitting display device according to Option 9, wherein the second transparent conductive layer includes a lower layer and an upper layer on the lower layer.

[0214] Embodiment 16. The light-emitting display device according to Embodiment 15, wherein the upper layer includes a material having a refractive index different from that of the lower layer.

[0215] Option 17. The light-emitting display device according to Option 9, wherein the bank layer includes an organic material, the thickness of the bank layer is 2200 nm, and the thickness of the second transparent conductive layer is 45 nm to 75 nm.

[0216] Solution 18. The light-emitting display device according to Solution 9, wherein the bank layer comprises an inorganic material and the thickness of the second transparent conductive layer is 5 nm to 25 nm.

[0217] Embodiment 19. The light-emitting display device according to Embodiment 18, wherein the bank layer has a thickness of 1000 nm to 2000 nm.

[0218] Solution 20. A light-emitting display device, comprising:

[0219] an outer coating layer on the substrate and having a base portion and a protruding portion protruding from the base portion;

[0220] a first electrode disposed to cover the base portion and a side portion of the protruding portion, wherein the first electrode includes a reflective layer and a transparent conductive layer on the reflective layer;

[0221] a bank layer covering the outer coating layer and a portion of the first electrode; and

[0222] A light emitting layer and a second electrode are provided on the first electrode and the bank layer.

[0223] Option 21. A light-emitting display device according to Option 20, wherein the thickness of the transparent conductive layer on the base portion of the outer coating layer is equal to the thickness of the transparent conductive layer on the protruding portion of the outer coating layer.

Claims

1. A light-emitting display device, comprising: a substrate, the substrate comprising a plurality of sub-pixels; an outer coating layer on the substrate and having a base portion and a protruding portion protruding from the base portion; a first electrode disposed to cover the base portion and side portions of the protruding portion at the plurality of sub-pixels; a bank layer covering the outer coating layer and a portion of the first electrode; as well as a light emitting layer and a second electrode on the first electrode and the bank layer at the plurality of sub-pixels, The first electrode includes a reflective layer and a transparent conductive layer on the reflective layer. wherein the transparent conductive layer includes a first portion on the base portion, a second portion on the side surface of the protruding portion, and a third portion on the upper surface of the protruding portion, and wherein the thickness of the second portion is greater than the thickness of the first portion, wherein the protruding portion includes one or more curved portions on an upper surface of the protruding portion, wherein the third portion is arranged along the shape of the one or more curved portions, wherein the third portion has a curved surface on the one or more curved portions, and The thickness of the third portion disposed on the one or more bent portions is greater than the thickness of the third portion on the protruding portion where the one or more bent portions are not disposed.

2. The light emitting display device according to claim 1, wherein: The thickness of the second portion is a vertical distance between a lower surface of the second portion in contact with the reflective layer and an upper surface of the second portion in contact with the bank layer.

3. The light emitting display device according to claim 1, wherein: The plurality of sub-pixels include a red sub-pixel, a green sub-pixel, and a blue sub-pixel, and Wherein, the transparent conductive layer is arranged at the blue sub-pixel.

4. The light emitting display device according to claim 1, wherein: The bank layer is formed of an inorganic material.

5. The light emitting display device according to claim 1, wherein: The thickness of the third portion is the same as the thickness of the first portion or the thickness of the second portion.

6. The light emitting display device according to claim 1, wherein: The thickness of the third portion on the one or more curved portions is the same as the thickness of the second portion.

7. The light emitting display device according to claim 1, wherein: The light emitting layer is disposed at each of the plurality of sub-pixels, respectively, and The thickness of the light emitting layer has a value configured to have a microcavity at each of the plurality of sub-pixels.

8. A light-emitting display device, comprising: A substrate having a plurality of sub-pixels, wherein the plurality of sub-pixels include a light-emitting region and a non-light-emitting region; an outer coating layer having a protruding portion protruding from the non-light emitting region; a light emitting element including a first electrode in contact with the protruding portion, a second electrode, and a light emitting layer at a light emitting region between the first electrode and the second electrode; as well as a bank layer covering the first electrode and a portion of the protruding portion, The first electrode includes a reflective layer and a transparent conductive layer on the reflective layer. wherein the transparent conductive layer comprises a first transparent conductive layer at the light emitting region, a second transparent conductive layer on the side surface of the protruding portion at the non-light emitting region, and a third transparent conductive layer on the upper surface of the protruding portion, and Wherein, the thickness of the second transparent conductive layer is greater than the thickness of the first transparent conductive layer, wherein the protruding portion includes one or more curved portions on an upper surface of the protruding portion, The third transparent conductive layer is arranged along the shape of the one or more curved portions. wherein the third transparent conductive layer has a curved surface on the one or more curved portions, and The thickness of the third transparent conductive layer disposed on the one or more curved portions is greater than the thickness of the third transparent conductive layer on the protruding portion where the one or more curved portions are not disposed.

9. The light emitting display device according to claim 8, wherein: The thickness of the second transparent conductive layer and the thickness of the first transparent conductive layer are configured to reduce the occurrence of a color coordinate change due to light reflected and extracted by the reflective layer disposed on the protruding portion.

10. The light emitting display device according to claim 8, wherein: The plurality of sub-pixels include a red sub-pixel, a green sub-pixel, and a blue sub-pixel, and The first transparent conductive layer and the second transparent conductive layer are disposed at the blue sub-pixel.

11. The light emitting display device according to claim 8, wherein: The first transparent conductive layer and the second transparent conductive layer include the same material.

12. The light emitting display device according to claim 8, wherein: The first transparent conductive layer and the second transparent conductive layer are integrally provided.

13. The light emitting display device according to claim 9, wherein: The second transparent conductive layer includes a material having a refractive index different from that of the bank layer.

14. The light emitting display device according to claim 8, wherein: The second transparent conductive layer includes a lower layer and an upper layer on the lower layer.

15. The light emitting display device according to claim 14, wherein: The upper layer includes a material having a refractive index different from that of the lower layer.

16. The light emitting display device according to claim 8, wherein: The bank layer includes an organic material, a thickness of the bank layer is 2200 nm, and a thickness of the second transparent conductive layer is 45 nm to 75 nm.

17. The light emitting display device according to claim 8, wherein: The bank layer includes an inorganic material, and the thickness of the second transparent conductive layer is 5 nm to 25 nm.

18. The light emitting display device according to claim 17, wherein: The bank layer has a thickness of 1000 nm to 2000 nm.

19. A light-emitting display device, comprising: an outer coating layer on the substrate and having a base portion and a protruding portion protruding from the base portion; a first electrode disposed to cover the base portion and a side portion of the protruding portion, wherein the first electrode includes a reflective layer and a transparent conductive layer on the reflective layer; a bank layer covering the outer coating layer and a portion of the first electrode; and a light emitting layer and a second electrode on the first electrode and the bank layer, wherein the transparent conductive layer includes a first portion on the base portion, a second portion on the side surface of the protruding portion, and a third portion on the upper surface of the protruding portion, wherein the protruding portion includes one or more curved portions on an upper surface of the protruding portion, wherein the third portion is arranged along the shape of the one or more curved portions, wherein the third portion has a curved surface on the one or more curved portions, and The thickness of the third portion disposed on the one or more bent portions is greater than the thickness of the third portion on the protruding portion where the one or more bent portions are not disposed.

20. The light emitting display device according to claim 19, wherein: The thickness of the first portion of the transparent conductive layer on the base portion of the overcoat layer is equal to the thickness of the third portion on the protruding portion where the one or more bent portions are not provided.

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